1
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Rivkin B, Akbar F, Otto M, Beyer L, Paul B, Kosiba K, Gustmann T, Hufenbach J, Medina-Sánchez M. Remotely Controlled Electrochemical Degradation of Metallic Implants. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307742. [PMID: 38326101 DOI: 10.1002/smll.202307742] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/05/2023] [Revised: 01/22/2024] [Indexed: 02/09/2024]
Abstract
Biodegradable medical implants promise to benefit patients by eliminating risks and discomfort associated with permanent implantation or surgical removal. The time until full resorption is largely determined by the implant's material composition, geometric design, and surface properties. Implants with a fixed residence time, however, cannot account for the needs of individual patients, thereby imposing limits on personalization. Here, an active Fe-based implant system is reported whose biodegradation is controlled remotely and in situ. This is achieved by incorporating a galvanic cell within the implant. An external and wireless signal is used to activate the on-board electronic circuit that controls the corrosion current between the implant body and an integrated counter electrode. This configuration leads to the accelerated degradation of the implant and allows to harvest electrochemical energy that is naturally released by corrosion. In this study, the electrochemical properties of the Fe-30Mn-1C/Pt galvanic cell model system is first investigated and high-resolution X-ray microcomputed tomography is used to evaluate the galvanic degradation of stent structures. Subsequently, a centimeter-sized active implant prototype is assembled with conventional electronic components and the remotely controlled corrosion is tested in vitro. Furthermore, strategies toward the miniaturization and full biodegradability of this system are presented.
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Affiliation(s)
- Boris Rivkin
- Leibniz Institute for Solid State and Materials Research (IFW), 01069, Dresden, Germany
| | - Farzin Akbar
- Leibniz Institute for Solid State and Materials Research (IFW), 01069, Dresden, Germany
| | - Martin Otto
- Leibniz Institute for Solid State and Materials Research (IFW), 01069, Dresden, Germany
- Institute of Materials Science, Technische Universität Bergakademie Freiberg, 09599, Freiberg, Germany
| | - Lukas Beyer
- Leibniz Institute for Solid State and Materials Research (IFW), 01069, Dresden, Germany
- Institute of Materials Science, Technische Universität Bergakademie Freiberg, 09599, Freiberg, Germany
| | - Birgit Paul
- Leibniz Institute for Solid State and Materials Research (IFW), 01069, Dresden, Germany
| | - Konrad Kosiba
- Leibniz Institute for Solid State and Materials Research (IFW), 01069, Dresden, Germany
| | - Tobias Gustmann
- Leibniz Institute for Solid State and Materials Research (IFW), 01069, Dresden, Germany
| | - Julia Hufenbach
- Leibniz Institute for Solid State and Materials Research (IFW), 01069, Dresden, Germany
- Institute of Materials Science, Technische Universität Bergakademie Freiberg, 09599, Freiberg, Germany
| | - Mariana Medina-Sánchez
- Leibniz Institute for Solid State and Materials Research (IFW), 01069, Dresden, Germany
- Center for Molecular Bioengineering (B CUBE), Chair of Micro- and Nano Systems, Technische Universität Dresden, 01307, Dresden, Germany
- CIC nanoGUNE-BRTA, Donostia-San Sebastián, 20018, Spain
- Ikerbasque, Basque Foundation for Science, Bilbao, 48013, Spain
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2
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Zhang Y, Lee G, Li S, Hu Z, Zhao K, Rogers JA. Advances in Bioresorbable Materials and Electronics. Chem Rev 2023; 123:11722-11773. [PMID: 37729090 DOI: 10.1021/acs.chemrev.3c00408] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/22/2023]
Abstract
Transient electronic systems represent an emerging class of technology that is defined by an ability to fully or partially dissolve, disintegrate, or otherwise disappear at controlled rates or triggered times through engineered chemical or physical processes after a required period of operation. This review highlights recent advances in materials chemistry that serve as the foundations for a subclass of transient electronics, bioresorbable electronics, that is characterized by an ability to resorb (or, equivalently, to absorb) in a biological environment. The primary use cases are in systems designed to insert into the human body, to provide sensing and/or therapeutic functions for timeframes aligned with natural biological processes. Mechanisms of bioresorption then harmlessly eliminate the devices, and their associated load on and risk to the patient, without the need of secondary removal surgeries. The core content focuses on the chemistry of the enabling electronic materials, spanning organic and inorganic compounds to hybrids and composites, along with their mechanisms of chemical reaction in biological environments. Following discussions highlight the use of these materials in bioresorbable electronic components, sensors, power supplies, and in integrated diagnostic and therapeutic systems formed using specialized methods for fabrication and assembly. A concluding section summarizes opportunities for future research.
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Affiliation(s)
- Yamin Zhang
- Center for Bio-Integrated Electronics, Northwestern University, Evanston, Illinois 60208, United States
- Querrey Simpson Institute for Bioelectronics, Northwestern University, Evanston, Illinois 60208, United States
| | - Geumbee Lee
- Center for Bio-Integrated Electronics, Northwestern University, Evanston, Illinois 60208, United States
- Querrey Simpson Institute for Bioelectronics, Northwestern University, Evanston, Illinois 60208, United States
| | - Shuo Li
- Center for Bio-Integrated Electronics, Northwestern University, Evanston, Illinois 60208, United States
- Querrey Simpson Institute for Bioelectronics, Northwestern University, Evanston, Illinois 60208, United States
| | - Ziying Hu
- Center for Bio-Integrated Electronics, Northwestern University, Evanston, Illinois 60208, United States
- Querrey Simpson Institute for Bioelectronics, Northwestern University, Evanston, Illinois 60208, United States
| | - Kaiyu Zhao
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - John A Rogers
- Center for Bio-Integrated Electronics, Northwestern University, Evanston, Illinois 60208, United States
- Querrey Simpson Institute for Bioelectronics, Northwestern University, Evanston, Illinois 60208, United States
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Neurological Surgery, Feinberg School of Medicine, Northwestern University, Chicago, Illinois 60611, United States
- Department of Mechanical Engineering, Biomedical Engineering, Chemistry, Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, United States
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3
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Abyzova E, Dogadina E, Rodriguez RD, Petrov I, Kolesnikova Y, Zhou M, Liu C, Sheremet E. Beyond Tissue replacement: The Emerging role of smart implants in healthcare. Mater Today Bio 2023; 22:100784. [PMID: 37731959 PMCID: PMC10507164 DOI: 10.1016/j.mtbio.2023.100784] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/13/2023] [Revised: 08/24/2023] [Accepted: 08/28/2023] [Indexed: 09/22/2023] Open
Abstract
Smart implants are increasingly used to treat various diseases, track patient status, and restore tissue and organ function. These devices support internal organs, actively stimulate nerves, and monitor essential functions. With continuous monitoring or stimulation, patient observation quality and subsequent treatment can be improved. Additionally, using biodegradable and entirely excreted implant materials eliminates the need for surgical removal, providing a patient-friendly solution. In this review, we classify smart implants and discuss the latest prototypes, materials, and technologies employed in their creation. Our focus lies in exploring medical devices beyond replacing an organ or tissue and incorporating new functionality through sensors and electronic circuits. We also examine the advantages, opportunities, and challenges of creating implantable devices that preserve all critical functions. By presenting an in-depth overview of the current state-of-the-art smart implants, we shed light on persistent issues and limitations while discussing potential avenues for future advancements in materials used for these devices.
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Affiliation(s)
- Elena Abyzova
- Tomsk Polytechnic University, Lenin ave. 30, Tomsk, Russia, 634050
| | - Elizaveta Dogadina
- Tomsk Polytechnic University, Lenin ave. 30, Tomsk, Russia, 634050
- Institute of Orthopaedic & Musculoskeletal Science, University College London, Royal National Orthopaedic Hospital, Stanmore, HA7 4LP, UK
| | | | - Ilia Petrov
- Tomsk Polytechnic University, Lenin ave. 30, Tomsk, Russia, 634050
| | | | - Mo Zhou
- Institute of Orthopaedic & Musculoskeletal Science, University College London, Royal National Orthopaedic Hospital, Stanmore, HA7 4LP, UK
| | - Chaozong Liu
- Institute of Orthopaedic & Musculoskeletal Science, University College London, Royal National Orthopaedic Hospital, Stanmore, HA7 4LP, UK
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4
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Kang DH, Choi JG, Lee WJ, Heo D, Wang S, Park S, Yoon MH. Aqueous electrolyte-gated solution-processed metal oxide transistors for direct cellular interfaces. APL Bioeng 2023; 7:026102. [PMID: 37056513 PMCID: PMC10089684 DOI: 10.1063/5.0138861] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Accepted: 03/23/2023] [Indexed: 04/15/2023] Open
Abstract
Biocompatible field-effect-transistor-based biosensors have drawn attention for the development of next-generation human-friendly electronics. High-performance electronic devices must achieve low-voltage operation, long-term operational stability, and biocompatibility. Herein, we propose an electrolyte-gated thin-film transistor made of large-area solution-processed indium-gallium-zinc oxide (IGZO) semiconductors capable of directly interacting with live cells at physiological conditions. The fabricated transistors exhibit good electrical performance operating under sub-0.5 V conditions with high on-/off-current ratios (>107) and transconductance (>1.0 mS) over an extended operational lifetime. Furthermore, we verified the biocompatibility of the IGZO surface to various types of mammalian cells in terms of cell viability, proliferation, morphology, and drug responsiveness. Finally, the prolonged stable operation of electrolyte-gated transistor devices directly integrated with live cells provides the proof-of-concept for solution-processed metal oxide material-based direct cellular interfaces.
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Affiliation(s)
- Dong-Hee Kang
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Jun-Gyu Choi
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Won-June Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Dongmi Heo
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Sungrok Wang
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Sungjun Park
- Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Myung-Han Yoon
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
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5
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Yamada S. A Transient Pseudo-Capacitor Using a Bioderived Ionic Liquid with Na Ions. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205598. [PMID: 36651124 DOI: 10.1002/smll.202205598] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2022] [Revised: 12/30/2022] [Indexed: 06/17/2023]
Abstract
A pseudo-capacitor with transient behavior is applied in implantable, disposable, and bioresorbable devices, incorporating an Na ion-doped bioderived ionic liquid, molybdenum trioxide (MoO3 )-covered molybdenum foil, and silk sheet as the electrolyte, electrode, and separator, respectively. Sodium lactate is dissolved in choline lactate as a source of Na ions. The Experimental results reveal that the Na ions are intercalated into the van der Waals gaps in MoO3 , and the pseudo-capacitor shows an areal capacitance (1.5 mF cm-2 ) that is three times larger than that without the Na ion. The fast ion diffusion of the electrolyte and the low resistance of the MoO3 and Mo interface result in an equivalent series resistance of 96 Ω. A cycle test indicates that the pseudo-capacitor exhibited a high capacitance retention of 82.8% after 10 000 cycles. The transient behavior is confirmed by the dissolution of the pseudo-capacitor into phosphate-buffered saline solution after 101 days. Potential applications of transient pseudo-capacitors include electronics without the need for device retrieval after use, including smart agriculture, implantable, and wearable devices.
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Affiliation(s)
- Shunsuke Yamada
- Department of Robotics, Division of Mechanical Engineering, Tohoku University, 6-6-01 Aoba, Aramakiaza, Aobaku, Sendaishi, Miyagi, 980-8579, Japan
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6
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Dulal M, Afroj S, Ahn J, Cho Y, Carr C, Kim ID, Karim N. Toward Sustainable Wearable Electronic Textiles. ACS NANO 2022; 16:19755-19788. [PMID: 36449447 PMCID: PMC9798870 DOI: 10.1021/acsnano.2c07723] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2022] [Accepted: 11/10/2022] [Indexed: 06/06/2023]
Abstract
Smart wearable electronic textiles (e-textiles) that can detect and differentiate multiple stimuli, while also collecting and storing the diverse array of data signals using highly innovative, multifunctional, and intelligent garments, are of great value for personalized healthcare applications. However, material performance and sustainability, complicated and difficult e-textile fabrication methods, and their limited end-of-life processability are major challenges to wide adoption of e-textiles. In this review, we explore the potential for sustainable materials, manufacturing techniques, and their end-of-the-life processes for developing eco-friendly e-textiles. In addition, we survey the current state-of-the-art for sustainable fibers and electronic materials (i.e., conductors, semiconductors, and dielectrics) to serve as different components in wearable e-textiles and then provide an overview of environmentally friendly digital manufacturing techniques for such textiles which involve less or no water utilization, combined with a reduction in both material waste and energy consumption. Furthermore, standardized parameters for evaluating the sustainability of e-textiles are established, such as life cycle analysis, biodegradability, and recyclability. Finally, we discuss the current development trends, as well as the future research directions for wearable e-textiles which include an integrated product design approach based on the use of eco-friendly materials, the development of sustainable manufacturing processes, and an effective end-of-the-life strategy to manufacture next generation smart and sustainable wearable e-textiles that can be either recycled to value-added products or decomposed in the landfill without any negative environmental impacts.
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Affiliation(s)
- Marzia Dulal
- Centre
for Print Research (CFPR), University of
the West of England, Frenchay Campus, BristolBS16 1QY, United
Kingdom
| | - Shaila Afroj
- Centre
for Print Research (CFPR), University of
the West of England, Frenchay Campus, BristolBS16 1QY, United
Kingdom
| | - Jaewan Ahn
- Department
of Materials Science and Engineering, Korea
Advanced Institute of Science and Technology (KAIST), Daejeon34141, Republic of Korea
| | - Yujang Cho
- Department
of Materials Science and Engineering, Korea
Advanced Institute of Science and Technology (KAIST), Daejeon34141, Republic of Korea
| | - Chris Carr
- Clothworkers’
Centre for Textile Materials Innovation for Healthcare, School of
Design, University of Leeds, LeedsLS2 9JT, United Kingdom
| | - Il-Doo Kim
- Department
of Materials Science and Engineering, Korea
Advanced Institute of Science and Technology (KAIST), Daejeon34141, Republic of Korea
| | - Nazmul Karim
- Centre
for Print Research (CFPR), University of
the West of England, Frenchay Campus, BristolBS16 1QY, United
Kingdom
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7
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Baek GW, Kim YJ, Lee M, Kwon Y, Chun B, Park G, Seo H, Yang H, Kwak J. Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors. MATERIALS (BASEL, SWITZERLAND) 2022; 15:ma15238511. [PMID: 36500003 PMCID: PMC9736594 DOI: 10.3390/ma15238511] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2022] [Revised: 11/18/2022] [Accepted: 11/27/2022] [Indexed: 05/28/2023]
Abstract
This paper aims to discuss the key accomplishments and further prospects of active-matrix (AM) quantum-dot (QD) light-emitting diodes (QLEDs) display. We present an overview and state-of-the-art of QLEDs as a frontplane and non-Si-based thin-film transistors (TFTs) as a backplane to meet the requirements for the next-generation displays, such as flexibility, transparency, low power consumption, fast response, high efficiency, and operational reliability. After a brief introduction, we first review the research on non-Si-based TFTs using metal oxides, transition metal dichalcogenides, and semiconducting carbon nanotubes as the driving unit of display devices. Next, QLED technologies are analyzed in terms of the device structure, device engineering, and QD patterning technique to realize high-performance, full-color AM-QLEDs. Lastly, recent research on the monolithic integration of TFT-QLED is examined, which proposes a new perspective on the integrated device. We anticipate that this review will help the readership understand the fundamentals, current state, and issues on TFTs and QLEDs for future AM-QLED displays.
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Affiliation(s)
- Geun Woo Baek
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Yeon Jun Kim
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Minhyung Lee
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Yeunwoo Kwon
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Beomsoo Chun
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Ganghyun Park
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Hansol Seo
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Heesun Yang
- Department of Materials Science and Engineering, Hongik University, Seoul 04066, Republic of Korea
| | - Jeonghun Kwak
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
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8
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Eswaran M, Chokkiah B, Pandit S, Rahimi S, Dhanusuraman R, Aleem M, Mijakovic I. A Road Map toward Field-Effect Transistor Biosensor Technology for Early Stage Cancer Detection. SMALL METHODS 2022; 6:e2200809. [PMID: 36068169 DOI: 10.1002/smtd.202200809] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2022] [Indexed: 06/15/2023]
Abstract
Field effect transistor (FET)-based nanoelectronic biosensor devices provide a viable route for specific and sensitive detection of cancer biomarkers, which can be used for early stage cancer detection, monitoring the progress of the disease, and evaluating the effectiveness of therapies. On the road to implementation of FET-based devices in cancer diagnostics, several key issues need to be addressed: sensitivity, selectivity, operational conditions, anti-interference, reusability, reproducibility, disposability, large-scale production, and economic viability. To address these well-known issues, significant research efforts have been made recently. An overview of these efforts is provided here, highlighting the approaches and strategies presently engaged at each developmental stage, from the design and fabrication of devices to performance evaluation and data analysis. Specifically, this review discusses the multistep fabrication of FETs, choice of bioreceptors for relevant biomarkers, operational conditions, measurement configuration, and outlines strategies to improve the sensing performance and reach the level required for clinical applications. Finally, this review outlines the expected progress to the future generation of FET-based diagnostic devices and discusses their potential for detection of cancer biomarkers as well as biomarkers of other noncommunicable and communicable diseases.
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Affiliation(s)
- Muthusankar Eswaran
- Division of Systems and Synthetic Biology, Department of Biology and Biological Engineering, Chalmers University of Technology, 41296, Göteborg, Sweden
| | - Bavatharani Chokkiah
- Nanoelectrochemistry Lab, Department of Chemistry, National Institute of Technology Puducherry, Karaikal, 609609, India
| | - Santosh Pandit
- Division of Systems and Synthetic Biology, Department of Biology and Biological Engineering, Chalmers University of Technology, 41296, Göteborg, Sweden
| | - Shadi Rahimi
- Division of Systems and Synthetic Biology, Department of Biology and Biological Engineering, Chalmers University of Technology, 41296, Göteborg, Sweden
| | - Ragupathy Dhanusuraman
- Nanoelectrochemistry Lab, Department of Chemistry, National Institute of Technology Puducherry, Karaikal, 609609, India
| | - Mahaboobbatcha Aleem
- Department of Electrical Engineering, City College of New York, New York, 10031, USA
| | - Ivan Mijakovic
- Division of Systems and Synthetic Biology, Department of Biology and Biological Engineering, Chalmers University of Technology, 41296, Göteborg, Sweden
- Novo Nordisk Foundation Center for Biosustainability, Technical University of Denmark, 2800, Lyngby, Denmark
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9
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Divya M, Pradhan JR, Priyadarsini SS, Dasgupta S. High Operation Frequency and Strain Tolerance of Fully Printed Oxide Thin Film Transistors and Circuits on PET Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2202891. [PMID: 35843892 DOI: 10.1002/smll.202202891] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2022] [Revised: 06/25/2022] [Indexed: 06/15/2023]
Abstract
The major limitations of solution-processed oxide electronics include high process temperatures and the absence of necessary strain tolerance that would be essential for flexible electronic applications. Here, a combination of low temperature (<100 °C) curable indium oxide nanoparticle ink and a conductive silver nanoink, which are used to fabricate fully-printed narrow-channel thin film transistors (TFTs) on polyethylene terephthalate (PET) substrates, is proposed. The metal ink is printed onto the In2 O3 nanoparticulate channel to narrow the effective channel lengths down to the thickness of the In2 O3 layer and thereby obtain near-vertical transport across the semiconductor layer. The TFTs thus prepared show On/Off ratio ≈106 and simultaneous maximum current density of 172 µA µm-1 . Next, the depletion-load inverters fabricated on PET substrates demonstrate signal gain >200 and operation frequency >300 kHz at low operation voltage of VDD = 2 V. In addition, the near-vertical transport across the semiconductor layer is found to be largely strain tolerant with insignificant change in the TFT and inverter performance observed under bending fatigue tests performed down to a bending radius of 1.5 mm, which translates to a strain value of 5%. The devices are also found to be robust against atmospheric exposure when remeasured after a month.
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Affiliation(s)
- Mitta Divya
- Department of Materials Engineering, Indian Institute of Science (IISc), Bangalore, 560012, India
| | - Jyoti Ranjan Pradhan
- Department of Materials Engineering, Indian Institute of Science (IISc), Bangalore, 560012, India
| | | | - Subho Dasgupta
- Department of Materials Engineering, Indian Institute of Science (IISc), Bangalore, 560012, India
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10
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Perera DC, Rasaiah JC. Exchange Functionals and Basis Sets for Density Functional Theory Studies of Water Splitting on Selected ZnO Nanocluster Catalysts. ACS OMEGA 2022; 7:12556-12569. [PMID: 35474813 PMCID: PMC9026035 DOI: 10.1021/acsomega.1c05666] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/10/2021] [Accepted: 03/18/2022] [Indexed: 06/14/2023]
Abstract
In this communication, we use density functional theory (DFT) to study the structural (geometry) and electronic properties (vertical detachment energy and electron affinity) of ZnO monomers and dimers that can be used to form ZnO clusters of different sizes, with a view to adapting one or more of them as catalysts or photocatalysts, standing alone or on suitable substrates like graphene, to split water. We also investigate different pairs of exchange functionals and basis sets to optimize their choice in our DFT calculations and to compare the singlet-triplet energy gaps of small ZnO clusters of different sizes to select an optimal cluster size for water splitting. We find that the B3LYP/DGDZVP2 exchange functional/basis set is a reliable combination for use with DFT to calculate the geometry and electronic properties of small ZnO nanoclusters from among several other combinations of exchange functionals and basis sets. Comparisons of the singlet-triplet energy gaps show that the trimer (ZnO)3 has an energy gap of 58.66 k cal/mol. which is approximately equal to the energy of a visible photon at a wavelength of 500 nm, and a HOMO-LUMO gap of 4.4 eV, making it a suitable choice of photocatalyst for the oxidation of water from among six (ZnO) n nanoclusters of monomers, with n ranging from 1 to 6. We used this exchange functional/basis set to study the structural and energetic details of hydration and hydrolysis of water absorbed on the (ZnO)3 nanocatalyst and calculated the corresponding potential energy profiles to identify three sets of singlet-triplet pathways for water splitting. Detailed study of a pathway showed that oxygen is produced after hydrogen, and the rate-determining step is the formation of hydrogen.
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11
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Recent Advances in Metal−Oxide Thin−Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors and Neuromorphic Applications. COATINGS 2022. [DOI: 10.3390/coatings12020204] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/04/2022]
Abstract
Thin−film transistors using metal oxides have been investigated extensively because of their high transparency, large area, and mass production of metal oxide semiconductors. Compatibility with conventional semiconductor processes, such as photolithography of the metal oxide offers the possibility to develop integrated circuits on a larger scale. In addition, combinations with other materials have enabled the development of sensor applications or neuromorphic devices in recent years. Here, this paper provides a timely overview of metal−oxide−based thin−film transistors focusing on emerging applications, including flexible/stretchable devices, integrated circuits, biosensors, and neuromorphic devices. This overview also revisits recent efforts on metal oxide−based thin−film transistors developed with high compatibility for integration to newly reported applications.
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12
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Shin JW, Chan Choe J, Lee JH, Han WB, Jang TM, Ko GJ, Yang SM, Kim YG, Joo J, Lim BH, Park E, Hwang SW. Biologically Safe, Degradable Self-Destruction System for On-Demand, Programmable Transient Electronics. ACS NANO 2021; 15:19310-19320. [PMID: 34843199 DOI: 10.1021/acsnano.1c05463] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
The lifetime of transient electronic components can be programmed via the use of encapsulation/passivation layers or of on-demand, stimuli-responsive polymers (heat, light, or chemicals), but yet most research is limited to slow dissolution rate, hazardous constituents, or byproducts, or complicated synthesis of reactants. Here we present a physicochemical destruction system with dissolvable, nontoxic materials as an efficient, multipurpose platform, where chemically produced bubbles rapidly collapse device structures and acidic molecules accelerate dissolution of functional traces. Extensive studies of composites based on biodegradable polymers (gelatin and poly(lactic-co-glycolic acid)) and harmless blowing agents (organic acid and bicarbonate salt) validate the capability for the desired system. Integration with wearable/recyclable electronic components, fast-degradable device layouts, and wireless microfluidic devices highlights potential applicability toward versatile/multifunctional transient systems. In vivo toxicity tests demonstrate biological safety of the proposed system.
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Affiliation(s)
- Jeong-Woong Shin
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Jong Chan Choe
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Joong Hoon Lee
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Won Bae Han
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Tae-Min Jang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Gwan-Jin Ko
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Seung Min Yang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Yu-Gyeong Kim
- Biomedical Engineering Research Center, Samsung Medical Center, Sungkyunkwan University School of Medicine, 81, Irwon-ro, Gangnam-gu, Seoul 06351, Republic of Korea
| | - Jaesun Joo
- Biomedical Engineering Research Center, Samsung Medical Center, Sungkyunkwan University School of Medicine, 81, Irwon-ro, Gangnam-gu, Seoul 06351, Republic of Korea
| | - Bong Hee Lim
- Biomedical Engineering Research Center, Samsung Medical Center, Sungkyunkwan University School of Medicine, 81, Irwon-ro, Gangnam-gu, Seoul 06351, Republic of Korea
| | - Eunkyoung Park
- Department of Medical and Mechatronics Engineering, Soonchunhyang University, 22, Soonchunhyang-ro, Sinchang-myeon, Asan-si, Chungcheongnam-do 31538, Republic of Korea
| | - Suk-Won Hwang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
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13
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Park Y, Chung TS, Lee G, Rogers JA. Materials Chemistry of Neural Interface Technologies and Recent Advances in Three-Dimensional Systems. Chem Rev 2021; 122:5277-5316. [PMID: 34739219 DOI: 10.1021/acs.chemrev.1c00639] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
Abstract
Advances in materials chemistry and engineering serve as the basis for multifunctional neural interfaces that span length scales from individual neurons to neural networks, neural tissues, and complete neural systems. Such technologies exploit electrical, electrochemical, optical, and/or pharmacological modalities in sensing and neuromodulation for fundamental studies in neuroscience research, with additional potential to serve as routes for monitoring and treating neurodegenerative diseases and for rehabilitating patients. This review summarizes the essential role of chemistry in this field of research, with an emphasis on recently published results and developing trends. The focus is on enabling materials in diverse device constructs, including their latest utilization in 3D bioelectronic frameworks formed by 3D printing, self-folding, and mechanically guided assembly. A concluding section highlights key challenges and future directions.
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Affiliation(s)
- Yoonseok Park
- Querrey Simpson Institute for Bioelectronics, Northwestern University, Evanston, Illinois 60208, United States
| | - Ted S Chung
- Querrey Simpson Institute for Bioelectronics, Northwestern University, Evanston, Illinois 60208, United States.,Department of Biomedical Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Geumbee Lee
- Querrey Simpson Institute for Bioelectronics, Northwestern University, Evanston, Illinois 60208, United States
| | - John A Rogers
- Querrey Simpson Institute for Bioelectronics, Northwestern University, Evanston, Illinois 60208, United States.,Department of Biomedical Engineering, Northwestern University, Evanston, Illinois 60208, United States.,Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.,Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, United States.,Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.,Department of Mechanical Engineering, Northwestern University, Evanston, Illinois 60208, United States.,Department of Neurological Surgery, Northwestern University, Evanston, Illinois 60208, United States
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14
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Bae J, Gwak E, Hwang G, Hwang HW, Lee D, Lee J, Joo Y, Sun J, Jun SH, Ok M, Kim J, Kang S. Biodegradable Metallic Glass for Stretchable Transient Electronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2004029. [PMID: 34026449 PMCID: PMC8132068 DOI: 10.1002/advs.202004029] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/23/2020] [Revised: 01/09/2021] [Indexed: 06/12/2023]
Abstract
Biodegradable electronics are disposable green devices whose constituents decompose into harmless byproducts, leaving no residual waste and minimally invasive medical implants requiring no removal surgery. Stretchable and flexible form factors are essential in biointegrated electronic applications for conformal integration with soft and expandable skins, tissues, and organs. Here a fully biodegradable MgZnCa metallic glass (MG) film is proposed for intrinsically stretchable electrodes with a high yield limit exploiting the advantages of amorphous phases with no crystalline defects. The irregular dissolution behavior of this amorphous alloy regarding electrical conductivity and morphology is investigated in aqueous solutions with different ion species. The MgZnCa MG nanofilm shows high elastic strain (≈2.6% in the nano-tensile test) and offers enhanced stretchability (≈115% when combined with serpentine geometry). The fatigue resistance in repeatable stretching also improves owing to the wide range of the elastic strain limit. Electronic components including the capacitor, inductor, diode, and transistor using the MgZnCa MG electrode support its integrability to transient electronic devices. The biodegradable triboelectric nanogenerator of MgZnCa MG operates stably over 50 000 cycles and its fatigue resistant applications in mechanical energy harvesting are verified. In vitro cell toxicity and in vivo inflammation tests demonstrate the biocompatibility in biointegrated use.
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Affiliation(s)
- Jae‐Young Bae
- Department of Materials Science and EngineeringSeoul National UniversitySeoul08826Republic of Korea
- Research Institute of Advanced Materials (RIAM)Seoul National UniversitySeoul08826Republic of Korea
| | - Eun‐Ji Gwak
- Department of Materials Science and EngineeringUNIST (Ulsan National Institute of Science and Technology)Ulsan44919Republic of Korea
- Department of Nano Manufacturing TechnologyKorea Institute of Machinery & Materials (KIMM)Daejeon34103Republic of Korea
| | - Gyeong‐Seok Hwang
- Department of Materials Science and EngineeringUNIST (Ulsan National Institute of Science and Technology)Ulsan44919Republic of Korea
| | - Hae Won Hwang
- Department of Materials Science and EngineeringSeoul National UniversitySeoul08826Republic of Korea
- Biomaterials Research Center, Biomedical Research DivisionKorea Institute of Science and Technology (KIST)Seoul02792Republic of Korea
| | - Dong‐Ju Lee
- Department of Materials Science and EngineeringUNIST (Ulsan National Institute of Science and Technology)Ulsan44919Republic of Korea
| | - Jong‐Sung Lee
- Department of Materials Science and EngineeringSeoul National UniversitySeoul08826Republic of Korea
- Research Institute of Advanced Materials (RIAM)Seoul National UniversitySeoul08826Republic of Korea
| | - Young‐Chang Joo
- Department of Materials Science and EngineeringSeoul National UniversitySeoul08826Republic of Korea
- Research Institute of Advanced Materials (RIAM)Seoul National UniversitySeoul08826Republic of Korea
| | - Jeong‐Yun Sun
- Department of Materials Science and EngineeringSeoul National UniversitySeoul08826Republic of Korea
- Research Institute of Advanced Materials (RIAM)Seoul National UniversitySeoul08826Republic of Korea
| | - Sang Ho Jun
- Department of Oral and Maxillofacial SurgeryKorea University Anam HospitalSeoul02841Republic of Korea
| | - Myoung‐Ryul Ok
- Biomaterials Research Center, Biomedical Research DivisionKorea Institute of Science and Technology (KIST)Seoul02792Republic of Korea
| | - Ju‐Young Kim
- Department of Materials Science and EngineeringUNIST (Ulsan National Institute of Science and Technology)Ulsan44919Republic of Korea
| | - Seung‐Kyun Kang
- Department of Materials Science and EngineeringSeoul National UniversitySeoul08826Republic of Korea
- Research Institute of Advanced Materials (RIAM)Seoul National UniversitySeoul08826Republic of Korea
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15
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Lee EG, Gong YJ, Lee SE, Na HJ, Im C, Kim H, Kim YS. Conductive Polymer-Assisted Metal Oxide Hybrid Semiconductors for High-Performance Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:8552-8562. [PMID: 33566562 DOI: 10.1021/acsami.0c21134] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Metal oxide semiconductors doped with additional inorganic cations have insufficient electron mobility for next-generation electronic devices so strategies to realize the semiconductors exhibiting stability and high performance are required. To overcome the limitations of conventional inorganic cation doping to improve the electrical characteristics and stability of metal oxide semiconductors, we propose solution-processed high-performance metal oxide thin-film transistors (TFTs) by incorporating polyaniline (PANI), a conductive polymer, in a metal oxide matrix. The chemical interaction between the metal oxide and PANI demonstrated that the defect sites and crystallinity of the semiconductor layer are controllable. In addition, the change in oxygen-related chemical bonding of PANI-doped indium oxide (InOx) TFTs induces superior electrical characteristics compared to pristine InOx TFTs, even though trace amounts of PANI are doped in the semiconductor. In particular, the average field-effect mobility remarkably enhanced from 15.02 to 26.58 cm2 V-1 s-1, the on/off current ratio improved from 108 to 109, and the threshold voltage became close to 0 V actually from -7.9 to -1.4 V.
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Affiliation(s)
- Eun Goo Lee
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
- Samsung Display Company, Ltd, 1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-Do 17113, Republic of Korea
| | - Yong Jun Gong
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Sung-Eun Lee
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
- Samsung Display Company, Ltd, 1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-Do 17113, Republic of Korea
| | - Hyun-Jae Na
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
- Samsung Display Company, Ltd, 1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-Do 17113, Republic of Korea
| | - Changik Im
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Heebae Kim
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Youn Sang Kim
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
- School of Chemical & Biological Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
- Advanced Institute of Convergence Technology, 145 Gwanggyo-ro, Yeongtong-gu, Suwon 16229, Republic of Korea
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16
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Zhao C, Liu Q, Cheung KM, Liu W, Yang Q, Xu X, Man T, Weiss PS, Zhou C, Andrews AM. Narrower Nanoribbon Biosensors Fabricated by Chemical Lift-off Lithography Show Higher Sensitivity. ACS NANO 2021; 15:904-915. [PMID: 33337135 PMCID: PMC7855841 DOI: 10.1021/acsnano.0c07503] [Citation(s) in RCA: 23] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Wafer-scale nanoribbon field-effect transistor (FET) biosensors fabricated by straightforward top-down processes are demonstrated as sensing platforms with high sensitivity to a broad range of biological targets. Nanoribbons with 350 nm widths (700 nm pitch) were patterned by chemical lift-off lithography using high-throughput, low-cost commercial digital versatile disks (DVDs) as masters. Lift-off lithography was also used to pattern ribbons with 2 μm or 20 μm widths (4 or 40 μm pitches, respectively) using masters fabricated by photolithography. For all widths, highly aligned, quasi-one-dimensional (1D) ribbon arrays were produced over centimeter length scales by sputtering to deposit 20 nm thin-film In2O3 as the semiconductor. Compared to 20 μm wide microribbons, FET sensors with 350 nm wide nanoribbons showed higher sensitivity to pH over a broad range (pH 5 to 10). Nanoribbon FETs functionalized with a serotonin-specific aptamer demonstrated larger responses to equimolar serotonin in high ionic strength buffer than those of microribbon FETs. Field-effect transistors with 350 nm wide nanoribbons functionalized with single-stranded DNA showed greater sensitivity to detecting complementary DNA hybridization vs 20 μm microribbon FETs. In all, we illustrate facile fabrication and use of large-area, uniform In2O3 nanoribbon FETs for ion, small-molecule, and oligonucleotide detection where higher surface-to-volume ratios translate to better detection sensitivities.
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Affiliation(s)
- Chuanzhen Zhao
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Qingzhou Liu
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, United States
| | - Kevin M. Cheung
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Wenfei Liu
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Qing Yang
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Xiaobin Xu
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Tianxing Man
- Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Paul S. Weiss
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
- Department of Bioengineering, University of California, Los Angeles, Los Angeles, California 90095, United States
- Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
- Corresponding Authors (AMA), (CZ), and (PSW)
| | - Chongwu Zhou
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, United States
- Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, United States
- Corresponding Authors (AMA), (CZ), and (PSW)
| | - Anne M. Andrews
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
- Department of Psychiatry and Biobehavioral Sciences, Semel Institute for Neuroscience and Human Behavior, and Hatos Center for Neuropharmacology, University of California, Los Angeles, Los Angeles, California 90095, United States
- Corresponding Authors (AMA), (CZ), and (PSW)
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17
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Chang H, Huang CH, Matsuzaki K, Nomura K. Back-Channel Defect Termination by Sulfur for p-Channel Cu 2O Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:51581-51588. [PMID: 33147003 DOI: 10.1021/acsami.0c11534] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The absence of a high-performance p-channel oxide thin-film transistor (TFT) is the major challenge faced in the current oxide semiconductor device technology. Simple solution-based back-channel subgap defect termination using sulfur was developed for p-channel cuprous oxide (Cu2O)-TFTs. We investigated the origin of poor device characteristics in conventional Cu2O-TFTs and clarified that it was mainly because of a back-channel donor-like defect of ∼2.8 ×1013 cm-2 eV-1, which originated from the interstitial Cu defect. Sulfur ion treatment using thiourea effectively reduced the back-channel defect down to <3 × 1012 cm-2 eV-1 and demonstrated the Cu2O-TFT with a saturation mobility of 1.38 ± 0.7 cm2 V-1 s-1, a s-value of 2.35 ± 1.22 V decade-1, and an on/off current ratio of ∼4.1 × 106. The improvement of device characteristics was attributed to the reduction of back-channel defect by the formation of a thin CuSO4 back-channel passivation layer by the chemical reaction of interstitial Cu with S and O ions. An oxide-based complementary inverter using a p-channel Cu2O-TFT and a n-channel a-In-Ga-Zn-O-TFT was demonstrated with a high voltage gain of ∼230 at VDD = 70 V.
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Affiliation(s)
- Hsuan Chang
- Department of Electrical and Computer Engineering, University of California San Diego, 9500 German Dr., La Jolla, California 92093, United States
| | - Chi-Hsin Huang
- Department of Electrical and Computer Engineering, University of California San Diego, 9500 German Dr., La Jolla, California 92093, United States
| | - Kosuke Matsuzaki
- Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatuta 4259, Midori, Yokohama 226-8503, Japan
| | - Kenji Nomura
- Department of Electrical and Computer Engineering, University of California San Diego, 9500 German Dr., La Jolla, California 92093, United States
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18
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Chen Y, Duan L, Ma Y, Han Q, Li X, Li J, Wang A, Bai S, Yin J. Preparation of transient electronic devices with silk fibroin film as a flexible substrate. Colloids Surf A Physicochem Eng Asp 2020. [DOI: 10.1016/j.colsurfa.2020.124896] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/24/2022]
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19
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Chen L, Yu H, Dirican M, Fang D, Tian Y, Yan C, Xie J, Jia D, Liu H, Wang J, Tang F, Zhang X, Tao J. Highly Thermally Stable, Green Solvent Disintegrable, and Recyclable Polymer Substrates for Flexible Electronics. Macromol Rapid Commun 2020; 41:e2000292. [PMID: 32833274 DOI: 10.1002/marc.202000292] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/27/2020] [Revised: 08/09/2020] [Indexed: 11/11/2022]
Abstract
Flexible electronics require its substrate to have adequate thermal stability, but current thermally stable polymer substrates are difficult to be disintegrated and recycled; hence, generate enormous electronic solid waste. Here, a thermally stable and green solvent-disintegrable polymer substrate is developed for flexible electronics to promote their recyclability and reduce solid waste generation. Thanks to the proper design of rigid backbones and rational adjustments of polar and bulky side groups, the polymer substrate exhibits excellent thermal and mechanical properties with thermal decomposition temperature (Td,5% ) of 430 °C, upper operating temperature of over 300 °C, coefficient of thermal expansion of 48 ppm K-1 , tensile strength of 103 MPa, and elastic modulus of 2.49 GPa. Furthermore, the substrate illustrates outstanding optical and dielectric properties with high transmittance of 91% and a low dielectric constant of 2.30. Additionally, it demonstrates remarkable chemical and flame resistance. A proof-of-concept flexible printed circuit device is fabricated with this substrate, which demonstrates outstanding mechanical-electrical stability. Most importantly, the substrate can be quickly disintegrated and recycled with alcohol. With outstanding thermally stable properties, accompanied by excellent recyclability, the substrate is particularly attractive for a wide range of electronics to reduce solid waste generation, and head toward flexible and "green" electronics.
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Affiliation(s)
- Linlin Chen
- State Key Lab of Pulp and Paper Engineering, South China University of Technology, Guangzhou, 510640, China
| | - Huang Yu
- State Key Lab of Pulp and Paper Engineering, South China University of Technology, Guangzhou, 510640, China
| | - Mahmut Dirican
- Fiber and Polymer Science Program, Department of Textile Engineering, Chemistry and Science, Wilson College of Textiles, North Carolina State University, Raleigh, NC, 27695-8301, USA
| | - Dongjun Fang
- State Key Lab of Pulp and Paper Engineering, South China University of Technology, Guangzhou, 510640, China
| | - Yan Tian
- State Key Lab of Pulp and Paper Engineering, South China University of Technology, Guangzhou, 510640, China
| | - Chaoyi Yan
- Fiber and Polymer Science Program, Department of Textile Engineering, Chemistry and Science, Wilson College of Textiles, North Carolina State University, Raleigh, NC, 27695-8301, USA
| | - Jingyi Xie
- State Key Lab of Pulp and Paper Engineering, South China University of Technology, Guangzhou, 510640, China
| | - Dongmei Jia
- State Key Lab of Pulp and Paper Engineering, South China University of Technology, Guangzhou, 510640, China
| | - Hao Liu
- State Key Lab of Pulp and Paper Engineering, South China University of Technology, Guangzhou, 510640, China
| | - Jiasheng Wang
- Guangzhou Lushan New Materials Co., Ltd, Guangzhou, 510530, China
| | - Fangcheng Tang
- Guangzhou Lushan New Materials Co., Ltd, Guangzhou, 510530, China
| | - Xiangwu Zhang
- Fiber and Polymer Science Program, Department of Textile Engineering, Chemistry and Science, Wilson College of Textiles, North Carolina State University, Raleigh, NC, 27695-8301, USA
| | - Jinsong Tao
- State Key Lab of Pulp and Paper Engineering, South China University of Technology, Guangzhou, 510640, China
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20
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Liu Q, Zhao C, Chen M, Liu Y, Zhao Z, Wu F, Li Z, Weiss PS, Andrews AM, Zhou C. Flexible Multiplexed In 2O 3 Nanoribbon Aptamer-Field-Effect Transistors for Biosensing. iScience 2020; 23:101469. [PMID: 33083757 PMCID: PMC7509003 DOI: 10.1016/j.isci.2020.101469] [Citation(s) in RCA: 34] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/24/2020] [Revised: 08/03/2020] [Accepted: 08/13/2020] [Indexed: 11/05/2022] Open
Abstract
Flexible sensors are essential for advancing implantable and wearable bioelectronics toward monitoring chemical signals within and on the body. Developing biosensors for monitoring multiple neurotransmitters in real time represents a key in vivo application that will increase understanding of information encoded in brain neurochemical fluxes. Here, arrays of devices having multiple In2O3 nanoribbon field-effect transistors (FETs) were fabricated on 1.4-μm-thick polyethylene terephthalate (PET) substrates using shadow mask patterning techniques. Thin PET-FET devices withstood crumpling and bending such that stable transistor performance with high mobility was maintained over >100 bending cycles. Real-time detection of the small-molecule neurotransmitters serotonin and dopamine was achieved by immobilizing recently identified high-affinity nucleic-acid aptamers on individual In2O3 nanoribbon devices. Limits of detection were 10 fM for serotonin and dopamine with detection ranges spanning eight orders of magnitude. Simultaneous sensing of temperature, pH, serotonin, and dopamine enabled integration of physiological and neurochemical data from individual bioelectronic devices. We fabricated flexible In2O3 nanoribbon transistors using cleanroom-free processes Flexible In2O3 transistors withstood crumpling and bending with stable performance Flexible aptamer biosensors detect neurotransmitters in real time Multiplexed sensors monitor temperature, pH, serotonin, and dopamine simultaneously
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Affiliation(s)
- Qingzhou Liu
- Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USA.,Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA 90089, USA
| | - Chuanzhen Zhao
- Department of Chemistry and Biochemistry, California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - Mingrui Chen
- Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USA
| | - Yihang Liu
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA 90089, USA
| | - Zhiyuan Zhao
- Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USA
| | - Fanqi Wu
- Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USA
| | - Zhen Li
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA 90089, USA
| | - Paul S Weiss
- Department of Chemistry and Biochemistry, California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA.,Departments of Bioengineering and Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - Anne M Andrews
- Department of Chemistry and Biochemistry, California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA.,Department of Psychiatry and Biobehavioral Sciences, Semel Institute for Neuroscience and Human Behavior, and Hatos Center for Neuropharmacology, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - Chongwu Zhou
- Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USA.,Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA 90089, USA
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21
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Al‐Attar H, Alwattar AA, Haddad A, Abdullah BA, Quayle P, Yeates SG. Polylactide‐perylene
derivative for blue biodegradable organic light‐emitting diodes. POLYM INT 2020. [DOI: 10.1002/pi.6083] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2022]
Affiliation(s)
- Hameed Al‐Attar
- Department of Physics, College of Science University of Basrah Basrah Iraq
- Department of Physics University of Durham Durham UK
| | - Aula A Alwattar
- Department of Chemistry, College of Science University of Basrah Basrah Iraq
- Departmment of Chemistry University of Manchester Manchester UK
| | - Athir Haddad
- Department of Chemistry, College of Science University of Basrah Basrah Iraq
- Departmment of Chemistry University of Manchester Manchester UK
| | - Bassil A Abdullah
- Department of Physics, College of Science University of Basrah Basrah Iraq
| | - Peter Quayle
- Departmment of Chemistry University of Manchester Manchester UK
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22
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Hu Y, Guo LQ, Huo C, Dai M, Webster TJ, Ding J. Transparent Nano Thin-Film Transistors for Medical Sensors, OLED and Display Applications. Int J Nanomedicine 2020; 15:3597-3603. [PMID: 32547016 PMCID: PMC7250528 DOI: 10.2147/ijn.s228940] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/28/2019] [Accepted: 03/29/2020] [Indexed: 11/23/2022] Open
Abstract
Background Transparent thin-film transistors (TFTs) have received a great deal of attention for medical sensors, OLED and medical display applications. Moreover, ultrathin nanomaterial layers are favored due to their more compact design architectures. Methods Here, transparent TFTs are proposed and were investigated under different stress conditions such as temperature and biases. Results Key electrical characteristics of the sensors, such as threshold voltage changes, illustrate their linear dependence on temperature with a suitable recovery, suggesting the potential of the devices to serve as medical temperature sensors. The temperature conditions changed in the range of 28°C to 40°C, which is within the standard human temperature testing range. The thickness of the indium-gallium-zinc oxide semiconductor layer was as thin as only 5–6 nm, deposited by mature radio-frequency sputtering which also showed good repeatability. Optimal bending durability caused by mechanical deformation was demonstrated via suitable electrical properties after up to 600 bending cycles, and by testing the flexible device at a different bending radii ranging from 48 mm to 18 mm. Conclusion In summary, this study suggests that the present transparent nano TFTs are promising candidates for medical sensors, OLED and displays which require transparency and stability.
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Affiliation(s)
- Yongbin Hu
- Institute of Intelligent Flexible Mechatronics, Jiangsu University, Zhenjiang 212013, People's Republic of China
| | - Li-Qiang Guo
- Institute of Intelligent Flexible Mechatronics, Jiangsu University, Zhenjiang 212013, People's Republic of China
| | - Changhe Huo
- Ningbo Institute of Materials and Technology Engineering, Chinese Academy of Sciences, Zhejiang 315201, People's Republic of China
| | - Mingzhi Dai
- Ningbo Institute of Materials and Technology Engineering, Chinese Academy of Sciences, Zhejiang 315201, People's Republic of China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Thomas J Webster
- Department of Chemical Engineering, Northeastern University, Boston, MA 02806, USA
| | - Jianning Ding
- Institute of Intelligent Flexible Mechatronics, Jiangsu University, Zhenjiang 212013, People's Republic of China
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23
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Huo W, Li J, Ren M, Ling W, Xu H, Tee CATH, Huang X. Recent development of bioresorbable electronics using additive manufacturing. Curr Opin Chem Eng 2020. [DOI: 10.1016/j.coche.2020.04.002] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/24/2022]
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Huang X, Wang L, Wang H, Zhang B, Wang X, Stening RYZ, Sheng X, Yin L. Materials Strategies and Device Architectures of Emerging Power Supply Devices for Implantable Bioelectronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e1902827. [PMID: 31513333 DOI: 10.1002/smll.201902827] [Citation(s) in RCA: 41] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2019] [Revised: 08/20/2019] [Indexed: 06/10/2023]
Abstract
Implantable bioelectronics represent an emerging technology that can be integrated into the human body for diagnostic and therapeutic functions. Power supply devices are an essential component of bioelectronics to ensure their robust performance. However, conventional power sources are usually bulky, rigid, and potentially contain hazardous constituent materials. The fact that biological organisms are soft, curvilinear, and have limited accommodation space poses new challenges for power supply systems to minimize the interface mismatch and still offer sufficient power to meet clinical-grade applications. Here, recent advances in state-of-the-art nonconventional power options for implantable electronics, specifically, miniaturized, flexible, or biodegradable power systems are reviewed. Material strategies and architectural design of a broad array of power devices are discussed, including energy storage systems (batteries and supercapacitors), power devices which harvest sources from the human body (biofuel cells, devices utilizing biopotentials, piezoelectric harvesters, triboelectric devices, and thermoelectric devices), and energy transfer devices which utilize sources in the surrounding environment (ultrasonic energy harvesters, inductive coupling/radiofrequency energy harvesters, and photovoltaic devices). Finally, future challenges and perspectives are given.
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Affiliation(s)
- Xueying Huang
- School of Materials Science and Engineering, The Key Laboratory of Advanced Materials of Ministry of Education, State Key Laboratory of New Ceramics and Fine Processing, Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, P. R. China
| | - Liu Wang
- School of Materials Science and Engineering, The Key Laboratory of Advanced Materials of Ministry of Education, State Key Laboratory of New Ceramics and Fine Processing, Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, P. R. China
| | - Huachun Wang
- Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology and Beijing Innovation Center for Future Chips, Tsinghua University, Beijing, 100084, P. R. China
| | - Bozhen Zhang
- School of Materials Science and Engineering, The Key Laboratory of Advanced Materials of Ministry of Education, State Key Laboratory of New Ceramics and Fine Processing, Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, P. R. China
| | - Xibo Wang
- School of Materials Science and Engineering, The Key Laboratory of Advanced Materials of Ministry of Education, State Key Laboratory of New Ceramics and Fine Processing, Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, P. R. China
| | - Rowena Y Z Stening
- Department of Materials Science, Trinity College, University of Oxford, Oxford, OX13BH, UK
| | - Xing Sheng
- Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology and Beijing Innovation Center for Future Chips, Tsinghua University, Beijing, 100084, P. R. China
| | - Lan Yin
- School of Materials Science and Engineering, The Key Laboratory of Advanced Materials of Ministry of Education, State Key Laboratory of New Ceramics and Fine Processing, Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, P. R. China
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25
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Jamshidi R, Chen Y, Montazami R. Active Transiency: A Novel Approach to Expedite Degradation in Transient Electronics. MATERIALS 2020; 13:ma13071514. [PMID: 32224921 PMCID: PMC7177843 DOI: 10.3390/ma13071514] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/27/2020] [Revised: 03/17/2020] [Accepted: 03/24/2020] [Indexed: 11/28/2022]
Abstract
Transient materials/electronics is an emerging class of technology concerned with materials and devices that are designed to operate over a pre-defined period of time, then undergo controlled degradation when exposed to stimuli. Degradation/transiency rate in solvent-triggered devices is strongly dependent on the chemical composition of the constituents, as well as their interactions with the solvent upon exposure. Such interactions are typically slow, passive, and diffusion-driven. In this study, we are introducing and exploring the integration of gas-forming reactions into transient materials/electronics to achieve expedited and active transiency. The integration of more complex chemical reaction paths to transiency not only expedites the dissolution mechanism but also maintains the pre-transiency stability of the system while under operation. A proof-of-concept transient electronic device, utilizing sodium-bicarbonate/citric-acid pair as gas-forming agents, is demonstrated and studied vs. control devices in the absence of gas-forming agents. While exhibiting enhanced transiency behavior, substrates with gas-forming agents also demonstrated sufficient mechanical properties and physical stability to be used as platforms for electronics.
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Affiliation(s)
- Reihaneh Jamshidi
- Department of Mechanical Engineering, University of Hartford, West Hartford, CT 06117, USA
- Correspondence:
| | - Yuanfen Chen
- College of Mechanical Engineering, Guangxi University, Nanning 530004, China;
| | - Reza Montazami
- Department of Mechanical Engineering, Iowa State University, Ames, IA 50011, USA;
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26
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Jeong JW, Hwang HS, Choi D, Ma BC, Jung J, Chang M. Hybrid Polymer/Metal Oxide Thin Films for High Performance, Flexible Transistors. MICROMACHINES 2020; 11:mi11030264. [PMID: 32143449 PMCID: PMC7143309 DOI: 10.3390/mi11030264] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/05/2020] [Revised: 02/28/2020] [Accepted: 03/03/2020] [Indexed: 01/26/2023]
Abstract
Metal oxides (MOs) have garnered significant attention in a variety of research fields, particularly in flexible electronics such as wearable devices, due to their superior electronic properties. Meanwhile, polymers exhibit excellent mechanical properties such as flexibility and durability, besides enabling economic solution-based fabrication. Therefore, MO/polymer nanocomposites are excellent electronic materials for use in flexible electronics owing to the confluence of the merits of their components. In this article, we review recent developments in the synthesis and fabrication techniques for MO/polymer nanocomposite-based flexible transistors. In particular, representative MO/polymer nanocomposites for flexible and transparent channel layers and gate dielectrics are introduced and their electronic properties-such as mobilities and dielectric constant-are presented. Finally, we highlight the advances in interface engineering and its influence on device electronics.
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Affiliation(s)
- Jae Won Jeong
- Department of Polymer Engineering, Graduate School, Chonnam National University, Gwangju 61186, Korea;
| | - Hye Suk Hwang
- Alan G. MacDiarmid Energy Research Institute, Chonnam National University, Gwangju 61186, Korea;
| | - Dalsu Choi
- Department of Chemical Engineering, Myongji University, Yongin-si, Gyeonggido 17058, Korea;
| | - Byung Chol Ma
- School of Chemical Engineering, Chonnam National University, Gwangju 61186, Korea
- Correspondence: (B.C.M.); (J.J.); (M.C.); Tel.: +82-62-530-1815 (B.C.M.); +82-62-530-1771 (J.J. & M.C.)
| | - Jaehan Jung
- Department of Materials Science and Engineering, Hongik University, Sejong 30016, Korea
- Correspondence: (B.C.M.); (J.J.); (M.C.); Tel.: +82-62-530-1815 (B.C.M.); +82-62-530-1771 (J.J. & M.C.)
| | - Mincheol Chang
- Department of Polymer Engineering, Graduate School, Chonnam National University, Gwangju 61186, Korea;
- Alan G. MacDiarmid Energy Research Institute, Chonnam National University, Gwangju 61186, Korea;
- School of Polymer Science and Engineering, Chonnam National University, Gwangju 61186, Korea
- Correspondence: (B.C.M.); (J.J.); (M.C.); Tel.: +82-62-530-1815 (B.C.M.); +82-62-530-1771 (J.J. & M.C.)
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27
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Degradable and Dissolvable Thin-Film Materials for the Applications of New-Generation Environmental-Friendly Electronic Devices. APPLIED SCIENCES-BASEL 2020. [DOI: 10.3390/app10041320] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/18/2023]
Abstract
The environmental pollution generated by electronic waste (e-waste), waste-gas, and wastewater restricts the sustainable development of society. Environmental-friendly electronics made of degradable, resorbable, and compatible thin-film materials were utilized and explored, which was beneficial for e-waste dissolution and sustainable development. In this paper, we present a literature review about the development of various degradable and disposable thin-films for electronic applications. The corresponding preparation methods were simply reviewed and one of the most exciting and promising methods was discussed: Printing electronics technology. After a short introduction, detailed applications in the environment sensors and eco-friendly devices based on these degradable and compatible thin-films were mainly reviewed, finalizing with the main conclusions and promising perspectives. Furthermore, the future on these upcoming environmental-friendly electronic devices are proposed and prospected, especially on resistive switching devices, showing great potential applications in artificial intelligence (AI) and the Internet of Thing (IoT). These resistive switching devices combine the functions of storage and computations, which can complement the off-shelf computing based on the von Neumann architecture and advance the development of the AI.
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28
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Tiwari N, Nirmal A, Kulkarni MR, John RA, Mathews N. Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors. Inorg Chem Front 2020. [DOI: 10.1039/d0qi00038h] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022]
Abstract
The review highlights low temperature activation processes for high performance n-type metal oxide semiconductors for TFTs.
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Affiliation(s)
- Nidhi Tiwari
- Energy Research Institute @ NTU (ERI@N)
- Nanyang Technological University
- Singapore 637553
| | - Amoolya Nirmal
- School of Materials Science and Engineering
- Nanyang Technological University
- Singapore 639798
| | | | - Rohit Abraham John
- School of Materials Science and Engineering
- Nanyang Technological University
- Singapore 639798
| | - Nripan Mathews
- Energy Research Institute @ NTU (ERI@N)
- Nanyang Technological University
- Singapore 637553
- School of Materials Science and Engineering
- Nanyang Technological University
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29
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Lin R, Yan X, Hao H, Gao W, Liu R. Introducing Temperature-Controlled Phase Transition Elastin-like Polypeptides to Transient Electronics: Realization of Proactive Biotriggered Electronics with Local Transience. ACS APPLIED MATERIALS & INTERFACES 2019; 11:46490-46496. [PMID: 31808331 DOI: 10.1021/acsami.9b14798] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Transient electronics have dramatically changed inner-body therapy in health care. They stand out because of their harmless dissolution in the human body with no lingering electronic trash. However, high-precision biomedical implants require programmable and serial remedy operations, and controlling the whole-device destruction is not proactive and precise. Thus, a novel biotriggered and temperature-controlled transient electronics fabrication method using elastin-like polypeptides (ELPs) as triggers is proposed. Biocompatible ELPs simply mixed with trace silver nanowire (AgNW) can serve as the "switch" for the electronics to respond to local temperature changes in deionized water, exhibiting an agile response time. A ratio gradient experiment of the ELPs and AgNW shows that more programmable and precise transience properties (initial resistance, ready time, response time, and stable resistance) can be achieved by using a designated proportion. Further, we validated that the 3D-printing-based ELP-triggering transient electronics fabrication method is very simple yet effective for preparing transient wireless charging LEDs. Transient devices comprising ELPs-AgNW and PLGA-Ag respond within 160 s below 10 °C and degrade within a certain period.
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Affiliation(s)
- Rongzan Lin
- Department of Biomedical Engineering, School of Medicine , Tsinghua University , Beijing 100084 , China
| | - Xinghui Yan
- Department of Biomedical Engineering, School of Medicine , Tsinghua University , Beijing 100084 , China
| | - Hanjun Hao
- Department of Biomedical Engineering, School of Medicine , Tsinghua University , Beijing 100084 , China
| | - Weiping Gao
- Department of Biomedical Engineering, School of Medicine , Tsinghua University , Beijing 100084 , China
| | - Ran Liu
- Department of Biomedical Engineering, School of Medicine , Tsinghua University , Beijing 100084 , China
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Yi N, Cui H, Zhang LG, Cheng H. Integration of biological systems with electronic-mechanical assemblies. Acta Biomater 2019; 95:91-111. [PMID: 31004844 PMCID: PMC6710161 DOI: 10.1016/j.actbio.2019.04.032] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/01/2018] [Revised: 04/10/2019] [Accepted: 04/11/2019] [Indexed: 02/06/2023]
Abstract
Biological systems continuously interact with the surrounding environment because they are dynamically evolving. The interaction is achieved through mechanical, electrical, chemical, biological, thermal, optical, or a synergistic combination of these cues. To provide a fundamental understanding of the interaction, recent efforts that integrate biological systems with the electronic-mechanical assemblies create unique opportunities for simultaneous monitoring and eliciting the responses to the biological system. Recent innovations in materials, fabrication processes, and device integration approaches have created the enablers to yield bio-integrated devices to interface with the biological system, ranging from cells and tissues to organs and living individual. In this short review, we will provide a brief overview of the recent development on the integration of the biological systems with electronic-mechanical assemblies across multiple scales, with applications ranging from healthcare monitoring to therapeutic options such as drug delivery and rehabilitation therapies. STATEMENT OF SIGNIFICANCE: An overview of the recent progress on the integration of the biological system with both electronic and mechanical assemblies is discussed. The integration creates the unique opportunity to simultaneously monitor and elicit the responses to the biological system, which provides a fundamental understanding of the interaction between the biological system and the electronic-mechanical assemblies. Recent innovations in materials, fabrication processes, and device integration approaches have created the enablers to yield bio-integrated devices to interface with the biological system, ranging from cells and tissues to organs and living individual.
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Affiliation(s)
- Ning Yi
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Haitao Cui
- Department of Mechanical and Aerospace Engineering, The George Washington University, Washington, DC 20052, USA
| | - Lijie Grace Zhang
- Department of Mechanical and Aerospace Engineering, The George Washington University, Washington, DC 20052, USA; Departments of Electrical and Computer Engineering, Biomedical Engineering, and Medicine, The George Washington University, Washington DC 20052, USA
| | - Huanyu Cheng
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA; Department of Engineering Science and Mechanics, and Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, USA.
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31
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Scheideler W, Subramanian V. Printed flexible and transparent electronics: enhancing low-temperature processed metal oxides with 0D and 1D nanomaterials. NANOTECHNOLOGY 2019; 30:272001. [PMID: 30893670 DOI: 10.1088/1361-6528/ab1167] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Metal oxides have broad multifunctionality and important applications to energy, sensing, and information display. Printed electronics have recently adopted metal oxides to push the limits of performance and stability for flexible thin film systems. However, a grand challenge in this field is to achieve these properties while balancing the thermal budget, which critically determines the applicability, flexibility, and cost of these systems. This paper presents a focused review of printed metal oxide electronics, highlighting our recent work developing high-performance, printed transistors processed at low temperatures via aqueous precursor chemistries, nanomaterial hybrid inks, and ultraviolet annealing. These results reveal the potential for printing uniquely high-performance active devices (electronic mobility >10 cm2 V-1 s-1) but also illustrates the utility of nanocomposites that integrate nanomaterials within a metal oxide matrix for improving device performance.
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Affiliation(s)
- William Scheideler
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, United States of America
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32
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Qi Q, Li Y, Qiu W, Zhang W, Shi C, Hou C, Yan W, Huang J, Yang L, Wang H, Guo W, Liu XY, Lin N. Transient bioelectrical devices inspired by a silkworm moth breaking out of its cocoon. RSC Adv 2019; 9:14254-14259. [PMID: 35519322 PMCID: PMC9064003 DOI: 10.1039/c9ra02147g] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/20/2019] [Accepted: 04/29/2019] [Indexed: 11/21/2022] Open
Abstract
Transient devices have attracted extensive interest because they allow changes in physical form and device function under the control of external stimuli or related commands and have very broad application prospects for information security, biomedical care and the environment. Transient bioelectrical devices were fabricated inspired by a silkworm moth breaking out of its cocoon, which has shown many advantages, including the use of mild stimulation, biocompatible materials, a simple process, and a universal strategy. For the fabrication of the transient devices, heat-sensitive microspheres with a 9.3 mol L−1 LiBr solution in wax shells were prepared by microfluidic technology, which were then assembled into silk fibroin (SF) electronic materials/devices, such as SF conductive film, an LED circuit on SF film, and a Ag/SF film/Pt/SF film memristor. The contribution from the LiBr/wax microspheres to the transient time of the SF films upon exposure to heat was quantitatively investigated. This approach was applied to transiently dissolve a flexible Ag-nanowire resistance circuit line on a SF substrate. Moreover, memristors constructed with a functional layer of SF were destroyed by melting the LiBr/wax microspheres. This technique paves the way for realizing transient bioelectrical devices inspired by biological behavior, which have been well optimized by nature via evolution. Silk fibroin-based transient devices were developed using LiBr/wax microspheres that mimic a silk cocoon protecting silkworm pupa and a juvenile moth secreting an enzyme to dissolve silk sericin and break a silk cocoon.![]()
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33
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Song MK, Namgung SD, Sung T, Cho AJ, Lee J, Ju M, Nam KT, Lee YS, Kwon JY. Physically Transient Field-Effect Transistors Based on Black Phosphorus. ACS APPLIED MATERIALS & INTERFACES 2018; 10:42630-42636. [PMID: 30370761 DOI: 10.1021/acsami.8b15015] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Black phosphorus (BP) has shown great potential as a semiconductor material beyond graphene and MoS2 because of its intrinsic band gap and high mobility. Moreover, the biocompatibility of the final biodegradation products of BP has led to extensive research on biomedical applications. Herein, physically transient field-effect transistors (FETs) based on black phosphorus have been demonstrated using peptide insulator as a gate dielectric layer. The fabricated devices show high hole mobility up to 468 cm2 V-1 s-1 and on-off current ratio over 103. The combined use of black phosphorus, peptide, and molybdenum provides rapid disappearance of the devices within 36 h. Dissolution kinetics and cytotoxicity of black phosphorus are assessed to clarify its availability to be applied in transient electronics. This work provides transient FETs with high degradability and high performance based on biocompatible black phosphorus.
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34
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Hawker MJ, Guo C, Omenetto FG, Kaplan DL. Solvent-Free Strategy To Encapsulate Degradable, Implantable Metals in Silk Fibroin. ACS APPLIED BIO MATERIALS 2018; 1:1677-1686. [PMID: 34996217 PMCID: PMC11047755 DOI: 10.1021/acsabm.8b00498] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Implantable electronics hold enormous clinical potential for diagnosis and treatment of neurodegenerative and cardiac diseases and abnormalities. Transient devices are attractive alternatives to conventional silicon electrodes, as they can provide short-term electrical stimulation/recording followed by complete device degradation, mitigating the need for removal surgeries. Packaging transient metals is inherently challenging as they degrade upon contact with aqueous conditions. Development of new transient metal packaging strategies is a critical step toward transient device development. In this fundamental work, a solvent-free compression molding approach to encapsulate magnesium, a resorbable metal, in silk fibroin protein is reported. Silk fibroin was selected because of its processing versatility, desirable mechanical properties, compatibility with biological environments, and controllable degradation behavior in aqueous environments. The silk/magnesium composites were fabricated via compression molding, followed by water annealing to modify the secondary structure of the silk protein matrix to tune physical properties. Transient composite properties as a function of water annealing time are presented, which elucidate synergies between silk physical properties and degradation kinetics of the encapsulated magnesium, information useful in the design of multifunctional, transient metal-based constructs.
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Affiliation(s)
- Morgan J Hawker
- Department of Biomedical Engineering, Tufts University, 4 Colby Street, Medford, Massachusetts 02155, United States
| | - Chengchen Guo
- Department of Biomedical Engineering, Tufts University, 4 Colby Street, Medford, Massachusetts 02155, United States
| | - Fiorenzo G Omenetto
- Department of Biomedical Engineering, Tufts University, 4 Colby Street, Medford, Massachusetts 02155, United States
| | - David L Kaplan
- Department of Biomedical Engineering, Tufts University, 4 Colby Street, Medford, Massachusetts 02155, United States
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35
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Yi N, Cheng Z, Yang L, Edelman G, Xue C, Ma Y, Zhu H, Cheng H. Fully Water-Soluble, High-Performance Transient Sensors on a Versatile Galactomannan Substrate Derived from the Endosperm. ACS APPLIED MATERIALS & INTERFACES 2018; 10:36664-36674. [PMID: 30261722 DOI: 10.1021/acsami.8b11682] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Green electronics on biodegradable substrates from natural sources have gained broad interest because of the advantages of being biodegradable, recyclable, sustainable, and cost-efficient. This study presents a low-cost, yet simple extraction and purification method that explores aqueous extraction and precipitation with ethanol for the synthesis of galactomannan films. In salient contrast to the other materials of natural origin, the process to obtain galactomannan films is energy efficient and environmentally friendly. As an alternative biodegradable material, galactomannan has direct relevance to the recent emerging biodegradable or transient electronics. The galactomannan substrate with temperature sensors and electrodes fabricated from zinc, a biodegradable material noted for its essential biological function, demonstrates a high-precision measurement of temperature and high-fidelity monitoring of electrophysiological signals (electromyogram or electrocardiogram). The resulting disposable sensors disappear without a trace in water and produce environmentally benign end products that could even be used for alkaline soil amendments. The set of materials explored in this study is also stable in organic solutions, enabling solvent-based fabrication that may be combined with recent advances in additive manufacturing techniques for a novel manufacturing method.
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Affiliation(s)
| | - Zheng Cheng
- Department of Mechanical and Industrial Engineering , Northeastern University , Boston , Massachusetts 02115 , United States
| | - Lei Yang
- Department of Mechanical and Industrial Engineering , Northeastern University , Boston , Massachusetts 02115 , United States
| | | | - Cuili Xue
- School of Precision Instrument and Optoelectronics Engineering , Tianjin University , Tianjin 300072 , China
| | - Yi Ma
- Department of Mechanical and Industrial Engineering , Northeastern University , Boston , Massachusetts 02115 , United States
| | - Hongli Zhu
- Department of Mechanical and Industrial Engineering , Northeastern University , Boston , Massachusetts 02115 , United States
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36
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Li R, Wang L, Yin L. Materials and Devices for Biodegradable and Soft Biomedical Electronics. MATERIALS (BASEL, SWITZERLAND) 2018; 11:E2108. [PMID: 30373154 PMCID: PMC6267565 DOI: 10.3390/ma11112108] [Citation(s) in RCA: 33] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/03/2018] [Revised: 10/22/2018] [Accepted: 10/23/2018] [Indexed: 11/16/2022]
Abstract
Biodegradable and soft biomedical electronics that eliminate secondary surgery and ensure intimate contact with soft biological tissues of the human body are of growing interest, due to their emerging applications in high-quality healthcare monitoring and effective disease treatments. Recent systematic studies have significantly expanded the biodegradable electronic materials database, and various novel transient systems have been proposed. Biodegradable materials with soft properties and integration schemes of flexible or/and stretchable platforms will further advance electronic systems that match the properties of biological systems, providing an important step along the path towards clinical trials. This review focuses on recent progress and achievements in biodegradable and soft electronics for biomedical applications. The available biodegradable materials in their soft formats, the associated novel fabrication schemes, the device layouts, and the functionality of a variety of fully bioresorbable and soft devices, are reviewed. Finally, the key challenges and possible future directions of biodegradable and soft electronics are provided.
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Affiliation(s)
- Rongfeng Li
- School of Materials Science and Engineering, The Key Laboratory of Advanced Materials of Ministry of Education, State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China.
| | - Liu Wang
- School of Materials Science and Engineering, The Key Laboratory of Advanced Materials of Ministry of Education, State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China.
| | - Lan Yin
- School of Materials Science and Engineering, The Key Laboratory of Advanced Materials of Ministry of Education, State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China.
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37
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Leng K, Guo C, Wu K, Wu Z. Tunnel Encapsulation Technology for Durability Improvement in Stretchable Electronics Fabrication. MICROMACHINES 2018; 9:mi9100519. [PMID: 30424452 PMCID: PMC6215241 DOI: 10.3390/mi9100519] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/18/2018] [Revised: 10/10/2018] [Accepted: 10/12/2018] [Indexed: 11/16/2022]
Abstract
Great diversity of process technologies and materials have been developed around stretchable electronics. A subset of them, which are made up of zigzag metal foil and soft silicon polymers, show advantages of being easy to manufacture and low cost. However, most of the circuits lack durability due to stress concentration of interconnects entirely embedded in elastic polymer silicone such as polydimethylsiloxane (PDMS). In our demonstration, tunnel encapsulation technology was introduced to relieve stress of these conductors when they were stretched to deform in and out of plane. It was realized by dissolving the medium of Polyvinyl Alcohol (PVA), previous cured together with circuits in polymer, to form the micro-tunnel which not only guarantee the stretchability of interconnect, but also help to improve the durability. With the protection of tunnel, the serpentine could stably maintain the designed shape and electrical performance after 50% strain cycling over 20,000 times. Finally, different materials for encapsulation were employed to provide promising options for applications in portable biomedical devices which demand duplicate distortion.
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Affiliation(s)
- Kangmin Leng
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Chuanfei Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
| | - Kang Wu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Zhigang Wu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
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38
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Kwon KY, Lee JS, Ko GJ, Sunwoo SH, Lee S, Jo YJ, Choi CH, Hwang SW, Kim TI. Biosafe, Eco-Friendly Levan Polysaccharide toward Transient Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1801332. [PMID: 29974639 DOI: 10.1002/smll.201801332] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2018] [Revised: 05/31/2018] [Indexed: 06/08/2023]
Abstract
New options in the material context of transient electronics are essential to create or expand potential applications and to progress in the face of technological challenges. A soft, transparent, and cost-effective polymer of levan polysaccharide that is capable of complete, programmable dissolution is described when immersed in water and implanted in an animal model. The results include chemical analysis, the kinetics of hydrolysis, and adjustable dissolution rates of levan, and a simple theoretical model of reactive diffusion governed by temperature. In vivo experiments of the levan represent nontoxicity and biocompatibility without any adverse reactions. On-demand, selective control of dissolution behaviors with an animal model demonstrates an effective triggering strategy to program the system's lifetime, providing the possibility of potential applications in envisioned areas such as bioresorbable electronic implants and drug release systems.
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Affiliation(s)
- Ki Yoon Kwon
- School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Ju Seung Lee
- School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Gwan-Jin Ko
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Sung Hyuk Sunwoo
- Department of Biomedical Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- Center for Neuroscience Imaging Research (CNIR), Institute of Basic Science (IBS), Suwon, 16419, Republic of Korea
| | - Sori Lee
- School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Young Jin Jo
- School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Chul Hee Choi
- Department of Microbiology and Medical Science, Chungnam National University School of Medicine, Daejeon, 35015, Republic of Korea
| | - Suk-Won Hwang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Tae-Il Kim
- School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- Department of Biomedical Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- Center for Neuroscience Imaging Research (CNIR), Institute of Basic Science (IBS), Suwon, 16419, Republic of Korea
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39
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Sun J, Wang H, Song F, Wang Z, Dang B, Yang M, Gao H, Ma X, Hao Y. Physically Transient Threshold Switching Device Based on Magnesium Oxide for Security Application. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1800945. [PMID: 29806233 DOI: 10.1002/smll.201800945] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2018] [Revised: 04/23/2018] [Indexed: 06/08/2023]
Abstract
Transient memristors are prospective candidates for both secure memory systems and biointegrated electronics, which are capable to physically disappear at a programmed time with a triggered operation. However, the sneak current issue has been a considerable obstacle to achieve high-density transient crossbar array of memristors. To solve this problem, it is necessary to develop a transient switch device to turn the memory device on and off controllably. Here, a dissolvable and flexible threshold switching (TS) device with a vertically crossed structure is introduced, which exhibits a high selectivity of 107 , steep turn-on slope of <8 mV dec-1 , and fast ON/OFF switch speed within 50/25 ns. Triggered failure could be achieved after soaking the device in deionized water for 8 min at room temperature. Furthermore, a water-assisted transfer printing method is used to fabricate flexible and transient TS device arrays for bioresorbable systems, in which none of any significant degradation is observed under a bending radius of 2 mm. Integrating the selector with a transient memristor is capable of 107 Gb memory implementation, indicating that the transient TS device could provide great opportunities to achieve highly integrated transient memory arrays.
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Affiliation(s)
- Jing Sun
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China
| | - Hong Wang
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China
- Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China
| | - Fang Song
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China
| | - Zhan Wang
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China
| | - Bingjie Dang
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China
| | - Mei Yang
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China
- Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China
| | - Haixia Gao
- Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China
- School of Microelectronics, Xidian University, Xi'an, 710071, China
| | - Xiaohua Ma
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China
- Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China
| | - Yue Hao
- Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China
- School of Microelectronics, Xidian University, Xi'an, 710071, China
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40
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Huang W, Guo P, Zeng L, Li R, Wang B, Wang G, Zhang X, Chang RPH, Yu J, Bedzyk MJ, Marks TJ, Facchetti A. Metal Composition and Polyethylenimine Doping Capacity Effects on Semiconducting Metal Oxide–Polymer Blend Charge Transport. J Am Chem Soc 2018; 140:5457-5473. [DOI: 10.1021/jacs.8b01252] [Citation(s) in RCA: 31] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
Affiliation(s)
- Wei Huang
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China
| | - Peijun Guo
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, United States
| | - Li Zeng
- Applied Physics Program and the Materials Research Center, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, United States
| | - Ran Li
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, United States
| | - Binghao Wang
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Gang Wang
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Xinan Zhang
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Robert P. H. Chang
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, United States
| | - Junsheng Yu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China
| | - Michael J. Bedzyk
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, United States
- Applied Physics Program and the Materials Research Center, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, United States
| | - Tobin J. Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- Flexterra Inc., 8025 Lamon Avenue, Skokie, Illinois 60077, United States
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41
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Marette A, Poulin A, Besse N, Rosset S, Briand D, Shea H. Flexible Zinc-Tin Oxide Thin Film Transistors Operating at 1 kV for Integrated Switching of Dielectric Elastomer Actuators Arrays. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1700880. [PMID: 28603892 DOI: 10.1002/adma.201700880] [Citation(s) in RCA: 29] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2017] [Revised: 03/26/2017] [Indexed: 05/19/2023]
Abstract
Flexible high-voltage thin-film transistors (HVTFTs) operating at more than 1 kV are integrated with compliant dielectric elastomer actuators (DEA) to create a flexible array of 16 independent actuators. To allow for high-voltage operation, the HVTFT implements a zinc-tin oxide channel, a thick dielectric stack, and an offset gate. At a source-drain bias of 1 kV, the HVTFT has a 20 µA on-current at a gate voltage bias of 30 V. Their electrical characteristics enable the switching of DEAs which require drive voltages of over 1 kV, making control of an array simpler in comparison to the use of external high-voltage switching. These HVTFTs are integrated in a flexible haptic display consisting of a 4 × 4 matrix of DEAs and HVTFTs. Using a single 1.4 kV supply, each DEA is independently switched by its associated HVTFT, requiring only a 30 V gate voltage for full DEA deflection. The 4 × 4 display operates well even when bent to a 5 mm radius of curvature. By enabling DEA switching at low voltages, flexible metal-oxide HVTFTs enable complex flexible systems with dozens to hundreds of independent DEAs for applications in haptics, Braille displays, and soft robotics.
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Affiliation(s)
- Alexis Marette
- Ecole Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000, Neuchâtel, Switzerland
| | - Alexandre Poulin
- Ecole Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000, Neuchâtel, Switzerland
| | - Nadine Besse
- Ecole Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000, Neuchâtel, Switzerland
| | - Samuel Rosset
- Ecole Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000, Neuchâtel, Switzerland
| | - Danick Briand
- Ecole Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000, Neuchâtel, Switzerland
| | - Herbert Shea
- Ecole Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000, Neuchâtel, Switzerland
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42
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Xi H, Chen D, Lv L, Zhong P, Lin Z, Chang J, Wang H, Wang B, Ma X, Zhang C. High performance transient organic solar cells on biodegradable polyvinyl alcohol composite substrates. RSC Adv 2017. [DOI: 10.1039/c7ra11191f] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Physically transient organic solar cells on PVA composite substrates have been successfully demonstrated for the first time.
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43
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Kim SY, Kim K, Hwang YH, Park J, Jang J, Nam Y, Kang Y, Kim M, Park HJ, Lee Z, Choi J, Kim Y, Jeong S, Bae BS, Park JU. High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance. NANOSCALE 2016; 8:17113-17121. [PMID: 27722626 DOI: 10.1039/c6nr05577j] [Citation(s) in RCA: 38] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
As demands for high pixel densities and wearable forms of displays increase, high-resolution printing technologies to achieve high performance transistors beyond current amorphous silicon levels and to allow low-temperature solution processability for plastic substrates have been explored as key processes in emerging flexible electronics. This study describes electrohydrodynamic inkjet (e-jet) technology for direct printing of oxide semiconductor thin film transistors (TFTs) with high resolution (minimum line width: 2 μm) and superb performance, including high mobility (∼230 cm2 V-1 s-1). Logic operations of the amplifier circuits composed of these e-jet-printed metal oxide semiconductor (MOS) TFTs demonstrate their high performance. Printed In2O TFTs with e-jet printing-assisted high-resolution S/D electrodes were prepared, and the direct printing of passivation layers on these channels enhanced their gate-bias stabilities significantly. Moreover, low process temperatures (<250 °C) enable the use of thin plastic substrates; highly flexible and stretchable TFT arrays have been demonstrated, suggesting promise for next-generation printed electronics.
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Affiliation(s)
- S-Y Kim
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 44919, Republic of Korea.
| | - K Kim
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 44919, Republic of Korea.
| | - Y H Hwang
- Radiation and Environmental Lab., Central Research Institute, Korea Hydro and Nuclear Power, Daejeon Metropolitan City, 34114, Republic of Korea
| | - J Park
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 44919, Republic of Korea.
| | - J Jang
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 44919, Republic of Korea.
| | - Y Nam
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon Metropolitan City, 34141, Republic of Korea.
| | - Y Kang
- School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 44919, Republic of Korea
| | - M Kim
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 44919, Republic of Korea.
| | - H J Park
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 44919, Republic of Korea.
| | - Z Lee
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 44919, Republic of Korea.
| | - J Choi
- School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 44919, Republic of Korea
| | - Y Kim
- Department of Computer Engineering, Kwangwoon University, Seoul Metropolitan City, 01897, Republic of Korea
| | - S Jeong
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon Metropolitan City, 34114, Republic of Korea
| | - B-S Bae
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon Metropolitan City, 34141, Republic of Korea.
| | - J-U Park
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 44919, Republic of Korea.
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44
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Wang H, Zhu B, Ma X, Hao Y, Chen X. Physically Transient Resistive Switching Memory Based on Silk Protein. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2016; 12:2715-9. [PMID: 27028213 DOI: 10.1002/smll.201502906] [Citation(s) in RCA: 58] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/24/2015] [Revised: 01/17/2016] [Indexed: 05/21/2023]
Abstract
Physically transient resistive switching devices based on silk protein are successfully demonstrated. The devices can be absolutely dissolved in deionized water or in phosphate-buffered saline in 2 h. At the same time, a reasonable resistance OFF/ON ratio of larger than 10(2) and a retention time of more than 10(4) s are achieved for nonvolatile memory applications.
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Affiliation(s)
- Hong Wang
- School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798
| | - Bowen Zhu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798
| | - Xiaohua Ma
- School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China
| | - Yue Hao
- School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China
| | - Xiaodong Chen
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798
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45
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Wan CJ, Liu YH, Zhu LQ, Feng P, Shi Y, Wan Q. Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors. ACS APPLIED MATERIALS & INTERFACES 2016; 8:9762-9768. [PMID: 27007748 DOI: 10.1021/acsami.5b12726] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium-gallium-zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation.
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Affiliation(s)
- Chang Jin Wan
- School of Electronic Science & Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
- Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences , Ningbo 315201, China
| | - Yang Hui Liu
- Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences , Ningbo 315201, China
| | - Li Qiang Zhu
- Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences , Ningbo 315201, China
| | - Ping Feng
- School of Electronic Science & Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Yi Shi
- School of Electronic Science & Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Qing Wan
- School of Electronic Science & Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
- Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences , Ningbo 315201, China
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46
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Meng L, Mahpeykar SM, Xiong Q, Ahvazi B, Wang X. Strain sensors on water-soluble cellulose nanofibril paper by polydimethylsiloxane (PDMS) stencil lithography. RSC Adv 2016. [DOI: 10.1039/c6ra10069d] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/25/2022] Open
Abstract
We report the patterning of metal electrodes on water-soluble nanofibril papers using PDMS stencil lithography. Strain sensors fabricated with silver nanoparticles on patterned metal electrodes show high gauge-factors of over 50 in strain testing.
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Affiliation(s)
- Lingju Meng
- Department of Electrical and Computer Engineering
- University of Alberta
- Edmonton
- Canada
| | - Seyed Milad Mahpeykar
- Department of Electrical and Computer Engineering
- University of Alberta
- Edmonton
- Canada
| | - Qiuyang Xiong
- Department of Electrical and Computer Engineering
- University of Alberta
- Edmonton
- Canada
| | - Behzad Ahvazi
- Biomass Processing & Conversion-BioResources
- Alberta Innovates Technology Future
- Edmonton
- Canada
| | - Xihua Wang
- Department of Electrical and Computer Engineering
- University of Alberta
- Edmonton
- Canada
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47
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Portilla L, Etschel SH, Tykwinski RR, Halik M. Green processing of metal oxide core-shell nanoparticles as low-temperature dielectrics in organic thin-film transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:5950-5954. [PMID: 26308740 DOI: 10.1002/adma.201502792] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2015] [Revised: 07/08/2015] [Indexed: 06/04/2023]
Abstract
TiO2 , Fe3 O4, AlOx , ITO (indium tin oxide), and CeO2 nanoparticles are tailored to exhibit excellent dispersability in deionized water and alcohols. The latter provides an ecofriendly solution for processing metal oxide nanoparticles at a neutral pH. Water-processed dielectrics from the metal oxide nanoparticles are incorporated into organic thin-film transistors fabricated on rigid and flexible substrates.
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Affiliation(s)
- Luis Portilla
- Organic Materials and Devices (OMD), Dept. of Materials Science, Friedrich-Alexander Universität Erlangen-Nürnberg, Martensstrasse 7, 91058, Erlangen, Germany
| | - Sebastian H Etschel
- Organic Materials and Devices (OMD), Dept. of Materials Science, Friedrich-Alexander Universität Erlangen-Nürnberg, Martensstrasse 7, 91058, Erlangen, Germany
- Dept. of Chemistry and Pharmacy & Interdisciplinary Center for Molecular Materials (ICMM), Friedrich-Alexander Universität Erlangen-Nürnberg, Henkestrasse 42, 91054, Erlangen, Germany
| | - Rik R Tykwinski
- Dept. of Chemistry and Pharmacy & Interdisciplinary Center for Molecular Materials (ICMM), Friedrich-Alexander Universität Erlangen-Nürnberg, Henkestrasse 42, 91054, Erlangen, Germany
| | - Marcus Halik
- Organic Materials and Devices (OMD), Dept. of Materials Science, Friedrich-Alexander Universität Erlangen-Nürnberg, Martensstrasse 7, 91058, Erlangen, Germany
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