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Zhang B, Ao Z, Lan X, Zhong J, Zhang F, Zhang S, Yang R, Wang L, Chen P, Wang G, Yang X, Liu H, Cao J, Zhong M, Li H, Zhang Z. Self-Rolled-Up WSe 2 One-Dimensional/Two-Dimensional Homojunctions: Enabling High-Performance Self-Powered Polarization-Sensitive Photodetectors. NANO LETTERS 2024; 24:7716-7723. [PMID: 38848111 DOI: 10.1021/acs.nanolett.4c01745] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
Mixed-dimensional heterostructures integrate materials of diverse dimensions with unique electronic functionalities, providing a new platform for research in electron transport and optoelectronic detection. Here, we report a novel covalently bonded one-dimensional/two-dimensional (1D/2D) homojunction structure with robust junction contacts, which exhibits wide-spectrum (from the visible to near-infrared regions), self-driven photodetection, and polarization-sensitive photodetection capabilities. Benefiting from the ultralow dark current at zero bias voltage, the on/off ratio and detectivity of the device reach 1.5 × 103 and 3.24 × 109 Jones, respectively. Furthermore, the pronounced anisotropy of the WSe2 1D/2D homojunction is attributed to its low symmetry, enabling polarization-sensitive detection. In the absence of any external bias voltage, the device exhibits strong linear dichroism for wavelengths of 638 and 808 nm, with anisotropy ratios of 2.06 and 1.96, respectively. These results indicate that such mixed-dimensional structures can serve as attractive building blocks for novel optoelectronic detectors.
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Affiliation(s)
- Baihui Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Zhikang Ao
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Xiang Lan
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Jiang Zhong
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Fen Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Shunhui Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Ruofan Yang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Luyao Wang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Peng Chen
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Guang Wang
- Department of Physics, College of Sciences, National University of Defense Technology, Changsha 410073, P. R. China
| | - Xiangdong Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo 315211, P. R. China
| | - Hang Liu
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Jinhui Cao
- College of Energy and Power Engineering, Changsha University of Science and Technology, Changsha 410114, P. R. China
| | - Mianzeng Zhong
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Hongjian Li
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Zhengwei Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
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Wang Y, Zhai W, Ren Y, Zhang Q, Yao Y, Li S, Yang Q, Zhou X, Li Z, Chi B, Liang J, He Z, Gu L, Zhang H. Phase-Controlled Growth of 1T'-MoS 2 Nanoribbons on 1H-MoS 2 Nanosheets. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307269. [PMID: 37934742 DOI: 10.1002/adma.202307269] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2023] [Revised: 10/31/2023] [Indexed: 11/09/2023]
Abstract
2D heterostructures are emerging as alternatives to conventional semiconductors, such as silicon, germanium, and gallium nitride, for next-generation electronics and optoelectronics. However, the direct growth of 2D heterostructures, especially for those with metastable phases still remains challenging. To obtain 2D transition metal dichalcogenides (TMDs) with designed phases, it is highly desired to develop phase-controlled synthetic strategies. Here, a facile chemical vapor deposition method is reported to prepare vertical 1H/1T' MoS2 heterophase structures. By simply changing the growth atmosphere, semimetallic 1T'-MoS2 can be in situ grown on the top of semiconducting 1H-MoS2, forming vertical semiconductor/semimetal 1H/1T' heterophase structures with a sharp interface. The integrated device based on the 1H/1T' MoS2 heterophase structure displays a typical rectifying behavior with a current rectifying ratio of ≈103. Moreover, the 1H/1T' MoS2-based photodetector achieves a responsivity of 1.07 A W-1 at 532 nm with an ultralow dark current of less than 10-11 A. The aforementioned results indicate that 1H/1T' MoS2 heterophase structures can be a promising candidate for future rectifiers and photodetectors. Importantly, the approach may pave the way toward tailoring the phases of TMDs, which can help us utilize phase engineering strategies to promote the performance of electronic devices.
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Affiliation(s)
- Yongji Wang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Wei Zhai
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Yi Ren
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Qi Yang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Xichen Zhou
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Zijian Li
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Banlan Chi
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Jinzhe Liang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Zhen He
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, China
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3
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Qiu D, Hou P. Ferroelectricity-Driven Self-Powered Weak Temperature and Broadband Light Detection in MoS 2/CuInP 2S 6/WSe 2 van der Waals Heterojunction Nanoarchitectonics. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59671-59680. [PMID: 38102080 DOI: 10.1021/acsami.3c12695] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/17/2023]
Abstract
Two-dimensional ferroelectric materials enrich the modulation degrees of freedom in self-powered van der Waals temperature/light detectors by incorporating pyroelectric and bulk photovoltaic effects. However, in addition to the low polarization, the practical applications of these materials are limited due to the significant challenge posed by their ultrathin nature, which affects their polarization stability. In this report, we introduce a design for a dual heterostructure-stabilized van der Waals heterojunction that addresses this challenge by improving the performance and extending the operational lifetime of self-powered van der Waals temperature/light detectors. The design is demonstrated using the MoS2/CuInP2S6 (CIPS)/WSe2 van der Waals heterojunction, which exhibits sensitivity to small temperature changes induced by weak light across the ultraviolet to mid-infrared spectrum. It can generate a noticeable pyroelectric current without the need for an external voltage, and its pyroelectric coefficient exceeds 130 and 978 μC/m2 K for 45 and 70 nm CIPS, respectively. The heterojunction offers high detection accuracy, with a temperature variation sensitivity as small as 0.1 K and an optical power intensity detection range from low to 1 μW/cm2. Additionally, the heterojunction exhibits exceptional detectivity (D*) for different light wavelengths. Remarkably, the self-powered detection performance remains stable for months without obvious degradation in the natural environment. These results offer a promising solution for high-performance, self-sustaining temperature/light detection applications and pave the way for the development of future ferroelectricity-driven photodetection technologies.
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Affiliation(s)
- Dan Qiu
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China
| | - Pengfei Hou
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China
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4
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Kwon YM, Lim YR, Bae G, Song DS, Jo HK, Park SY, Jang M, Yim S, Myung S, Lim J, Lee SS, Song W. Spectro-Microscopic Perceptions into Oxidation Behavior of Large-Scale Molybdenum Disulfide and its Photoelectrical Correlation. SMALL METHODS 2023; 7:e2300147. [PMID: 37317009 DOI: 10.1002/smtd.202300147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2023] [Revised: 05/15/2023] [Indexed: 06/16/2023]
Abstract
Despite the encouraging properties and research of 2D MoS2 , an ongoing issue associated with the oxidative instability remains elusive for practical optoelectronic applications. Thus, in-depth understanding of the oxidation behavior of large-scale and homogeneous 2D MoS2 is imperative. Here the structural and chemical transformations of large-area MoS2 multilayers by air-annealing with altered temperature and time via combinatorial spectro-microscopic analyses (Raman spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy) are surveyed. The results gave indications pertaining to temperature- and time-dependent oxidation effects: i) heat-driven elimination of redundant residues, ii) internal strain stimulated by the formation of MoO bonds, iii) deterioration of the MoS2 crystallinity, iv) layer thinning, and v) morphological transformation from 2D MoS2 layers to particles. Photoelectrical characterization of the air-annealed MoS2 is implemented to capture the link between the oxidation behavior of MoS2 multilayers and their photoelectrical properties. The photocurrent based on MoS2 air-annealed at 200 °C is assessed to be 4.92 µA, which is 1.73 times higher than that of pristine MoS2 (2.84 µA). The diminution in the photocurrent of the photodetector based on MoS2 air-annealed above 300 °C in terms of the structural, chemical, and electrical conversions induced by the oxidation process is further discussed.
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Affiliation(s)
- Yeong Min Kwon
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Yi Rang Lim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Garam Bae
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Da Som Song
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Hyeong-Ku Jo
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Se Yeon Park
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Moonjeong Jang
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Soonmin Yim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Sung Myung
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Jongsun Lim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Sun Sook Lee
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Wooseok Song
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
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5
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Yan Y, Li M, Xia K, Yang K, Wu D, Li L, Fei G, Gan W. A two-dimensional Te/ReS 2 van der Waals heterostructure photodetector with high photoresponsivity and fast photoresponse. NANOSCALE 2023; 15:7730-7736. [PMID: 37060126 DOI: 10.1039/d2nr07185a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Two-dimensional (2D) semiconductors are the building blocks for high-performance optoelectronic devices. However, the performance of photoconductive photodetectors based on 2D semiconductors is hampered by low photoresponsivity and large dark current. Herein, a van der Waals heterostructure (vdWH) composed of rhenium disulfide (ReS2) and tellurium (Te) is fabricated. The Te/ReS2 vdWH photodetector exhibits a sensitive and broadband photoresponse and has high photoresponse on/off ratios under ultraviolet and visible light illumination, especially over 102 in visible light. The Te/ReS2 vdWH photodetector achieves the responsivity of 7.9 A W-1 at 365 nm, 3.02 A W-1 at 450 nm, 2.37 A W-1 at 532 nm, and 2.45 A W-1 at 660 nm. In addition, the device achieves a high specific detectivity of 1011 Jones and a fast photoresponse speed of 11.9 μs. Such high responsivity could be attributed to the efficient absorption of phonons by the Te/ReS2 vdWH and the high-quality heterostructure interfaces with a small amount of trap states. The highly crystalline structure of Te/ReS2 with a low density of defects reduces the grain boundary scattering, leading to the rapid diffusion of charge carriers. Moreover, the Te/ReS2 vdWH device exhibits a photovoltaic effect and can be employed as a self-powered photodetector (SPPD), which is sensitive to visible light of 450 nm, 532 nm, and 660 nm. Our findings demonstrate that the Te/ReS2 vdWH photodetector is an ideal building block for the next-generation electronic and optoelectronic devices in practical applications.
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Affiliation(s)
- Yafei Yan
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Minxin Li
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Kai Xia
- University of Science and Technology of China, Hefei 230026, P. R. China
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
| | - Kemeng Yang
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Dun Wu
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Liang Li
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
| | - Guangtao Fei
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
| | - Wei Gan
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
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6
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Huang Z, Zhou Y, Luo Z, Yang Y, Yang M, Gao W, Yao J, Zhao Y, Yang Y, Zheng Z, Li J. Integration of photovoltaic and photogating effects in a WSe 2/WS 2/p-Si dual junction photodetector featuring high-sensitivity and fast-response. NANOSCALE ADVANCES 2023; 5:675-684. [PMID: 36756495 PMCID: PMC9891068 DOI: 10.1039/d2na00552b] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/17/2022] [Accepted: 11/26/2022] [Indexed: 06/09/2023]
Abstract
Two-dimensional (2D) material-based van der Waals (vdW) heterostructures with exotic semiconducting properties have shown tremendous potential in next-generation photovoltaic photodetectors. Nevertheless, these vdW heterostructure devices inevitably suffer from a compromise between high sensitivity and fast response. Herein, an ingenious photovoltaic photodetector based on a WSe2/WS2/p-Si dual-vdW heterojunction is demonstrated. First-principles calculations and energy band profiles consolidate that the photogating effect originating from the bottom vdW heterojunction not only strengthens the photovoltaic effect of the top vdW heterojunction, but also suppresses the recombination of photogenerated carriers. As a consequence, the separation of photogenerated carriers is facilitated and their lifetimes are extended, resulting in higher photoconductive gain. Coupled with these synergistic effects, this WSe2/WS2/p-Si device exhibits both high sensitivity (responsivity of 340 mA W-1, a light on/off ratio greater than 2500, and a detectivity of 3.34 × 1011 Jones) and fast response time (rise/decay time of 657/671 μs) under 405 nm light illumination in self-powered mode. Finally, high-resolution visible-light and near-infrared imaging capabilities are demonstrated by adopting this dual-heterojunction device as a single pixel, indicating its great application prospects in future optoelectronic systems.
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Affiliation(s)
- Zihao Huang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University Guangzhou 510275 Guangdong P. R. China
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
| | - Yuchen Zhou
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
- Honor Device Co.,Ltd Shenzhen 518000 Guangdong P. R. China
| | - Zhongtong Luo
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
| | - Yibing Yang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
| | - Mengmeng Yang
- Institute of Semiconductors, South China Normal University Foshan 528225 Guangdong P. R. China
| | - Wei Gao
- Institute of Semiconductors, South China Normal University Foshan 528225 Guangdong P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University Guangzhou 510275 Guangdong P. R. China
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
| | - Yuhua Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University Guangzhou 510275 Guangdong P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
| | - Jingbo Li
- Institute of Semiconductors, South China Normal University Foshan 528225 Guangdong P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology Guangzhou 510631 P. R. China
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Yang J, Li J, Bahrami A, Nasiri N, Lehmann S, Cichocka MO, Mukherjee S, Nielsch K. Wafer-Scale Growth of Sb 2Te 3 Films via Low-Temperature Atomic Layer Deposition for Self-Powered Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:54034-54043. [PMID: 36383043 DOI: 10.1021/acsami.2c16150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
In this work, we demonstrate the performance of a silicon-compatible, high-performance, and self-powered photodetector. A wide detection range from visible (405 nm) to near-infrared (1550 nm) light was enabled by the vertical p-n heterojunction between the p-type antimony telluride (Sb2Te3) thin film and the n-type silicon (Si) substrates. A Sb2Te3 film with a good crystal quality, low density of extended defects, proper stoichiometry, p-type nature, and excellent uniformity across a 4 in. wafer was achieved by atomic layer deposition at 80 °C using (Et3Si)2Te and SbCl3 as precursors. The processed photodetectors have a low dark current (∼20 pA), a high responsivity of (∼4.3 A/W at 405 nm and ∼150 mA/W at 1550 nm), a peak detectivity of ∼1.65 × 1014 Jones, and a quick rise time of ∼98 μs under zero bias voltage. Density functional theory calculations reveal a narrow, near-direct, type-II band gap at the heterointerface that supports a strong built-in electric field leading to efficient separation of the photogenerated carriers. The devices have long-term air stability and efficient switching behavior even at elevated temperatures. These high-performance and self-powered p-Sb2Te3/n-Si heterojunction photodetectors have immense potential to become reliable technological building blocks for a plethora of innovative applications in next-generation optoelectronics, silicon-photonics, chip-level sensing, and detection.
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Affiliation(s)
- Jun Yang
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
- Institute of Materials Science, Technische Universität Dresden, 01062Dresden, Germany
| | - Jianzhu Li
- School of Materials Science and Engineering, Harbin Institute of Technology (Weihai), West Road 2, Weihai, Shandong264209, China
| | - Amin Bahrami
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
| | - Noushin Nasiri
- School of Engineering, Faculty of Science and Engineering, Macquarie University, Sydney, New South Wales2109, Australia
| | - Sebastian Lehmann
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
| | - Magdalena Ola Cichocka
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
| | - Samik Mukherjee
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
| | - Kornelius Nielsch
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
- Institute of Materials Science, Technische Universität Dresden, 01062Dresden, Germany
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8
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Cao X, Lei Z, Zhao S, Tao L, Zheng Z, Feng X, Li J, Zhao Y. Te/SnS 2 tunneling heterojunctions as high-performance photodetectors with superior self-powered properties. NANOSCALE ADVANCES 2022; 4:4296-4303. [PMID: 36321139 PMCID: PMC9552753 DOI: 10.1039/d2na00507g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Accepted: 08/28/2022] [Indexed: 06/16/2023]
Abstract
The tunneling heterojunctions made of two-dimensional (2D) materials have been explored to have many intriguing properties, such as ultrahigh rectification and on/off ratio, superior photoresponsivity, and improved photoresponse speed, showing great potential in achieving multifunctional and high-performance electronic and optoelectronic devices. Here, we report a systematic study of the tunneling heterojunctions consisting of 2D tellurium (Te) and Tin disulfide (SnS2). The Te/SnS2 heterojunctions possess type-II band alignment and can transfer to type-III one under reverse bias, showing a reverse rectification ratio of about 5000 and a current on/off ratio over 104. The tunneling heterojunctions as photodetectors exhibit an ultrahigh photoresponsivity of 50.5 A W-1 in the visible range, along with a dramatically enhanced photoresponse speed. Furthermore, due to the reasonable type-II band alignment and negligible band bending at the interface, Te/SnS2 heterojunctions at zero bias exhibit excellent self-powered performance with a high responsivity of 2.21 A W-1 and external quantum efficiency of 678%. The proposed heterostructure in this work provides a useful guideline for the rational design of a high-performance self-powered photodetector.
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Affiliation(s)
- Xuanhao Cao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Zehong Lei
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Shuting Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Lili Tao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Xing Feng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Jingbo Li
- Guangdong Key Lab of Chip and Integration Technology, Institute of Semiconductors, South China Normal University Guangzhou 510631 P. R. China
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology Guangzhou 510006 China
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Abstract
The past one and a half decades have witnessed the tremendous progress of two-dimensional (2D) crystals, including graphene, transition-metal dichalcogenides, black phosphorus, MXenes, hexagonal boron nitride, etc., in a variety of fields. The key to their success is their unique structural, electrical, mechanical and optical properties. Herein, this paper gives a comprehensive summary on the recent advances in 2D materials for optoelectronic approaches with the emphasis on the morphology and structure, optical properties, synthesis methods, as well as detailed optoelectronic applications. Additionally, the challenges and perspectives in the current development of 2D materials are also summarized and indicated. Therefore, this review can provide a reference for further explorations and innovations of 2D material-based optoelectronics devices.
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10
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Kim B, Park N, Kim J. Giant bulk photovoltaic effect driven by the wall-to-wall charge shift in WS 2 nanotubes. Nat Commun 2022; 13:3237. [PMID: 35688833 PMCID: PMC9187746 DOI: 10.1038/s41467-022-31018-8] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/02/2021] [Accepted: 05/27/2022] [Indexed: 01/13/2023] Open
Abstract
The intrinsic light–matter characteristics of transition-metal dichalcogenides have not only been of great scientific interest but have also provided novel opportunities for the development of advanced optoelectronic devices. Among the family of transition-metal dichalcogenide structures, the one-dimensional nanotube is particularly attractive because it produces a spontaneous photocurrent that is prohibited in its higher-dimensional counterparts. Here, we show that WS2 nanotubes exhibit a giant shift current near the infrared region, amounting to four times the previously reported values in the higher frequency range. The wall-to-wall charge shift constitutes a key advantage of the one-dimensional nanotube geometry, and we consider a Janus-type heteroatomic configuration that can maximize this interwall effect. To assess the nonlinear effect of a strong field and the nonadiabatic effect of atomic motion, we carried out direct real-time integration of the photoinduced current using time-dependent density functional theory. Our findings provide a solid basis for a complete quantum mechanical understanding of the unique light–matter interaction hidden in the geometric characteristics of the reduced dimension. We demonstrate that double-wall or multi-wall WS2 nanotubes can exhibit unexpectedly efficient bulk photovoltaic effect owing to its unique inter-wall charge-shifting excitations.
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Affiliation(s)
- Bumseop Kim
- Department of Physics, Ulsan National Institute of Science and Technology, Ulsan, 689-798, Korea
| | - Noejung Park
- Department of Physics, Ulsan National Institute of Science and Technology, Ulsan, 689-798, Korea.
| | - Jeongwoo Kim
- Department of Physics, Incheon National University, Incheon, 406-772, Korea.
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11
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Yan Z, Yang H, Yang Z, Ji C, Zhang G, Tu Y, Du G, Cai S, Lin S. Emerging Two-Dimensional Tellurene and Tellurides for Broadband Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200016. [PMID: 35244332 DOI: 10.1002/smll.202200016] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2022] [Revised: 01/30/2022] [Indexed: 06/14/2023]
Abstract
As with all stylish 2D functional materials, tellurene and tellurides possessing excellent physical and chemical properties such as high environmental stability, tunable narrow bandgap, and lower thermal conductivity, have aroused the great interest of the researchers. These properties of such materials also form the basis for relatively newfangled scholarly fields involving advanced topics, especially for broadband photodetectors. Integrating the excellent properties of many 2D materials, tellurene/telluride-based photodetectors show great flexibility, higher frequency response or faster time response, high signal-to-noise ratio, and so on, which make them leading the frontier of photodetector research. To fully understand the excellent properties of tellurene/tellurides and their optoelectronic applications, the recent advances in tellurene/telluride-based photodetectors are maximally summarized. Benefiting from the solid research in this field, the challenges and opportunities of tellurene/tellurides for future optoelectronic applications are also discussed in this review, which might provide possibilities for the realization of state-of-the-art high-performance tellurene/telluride-based devices.
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Affiliation(s)
- Zihan Yan
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- College of Physics Science and Technology, Yangzhou University, Jiangsu, 225009, China
| | - Hao Yang
- College of Physics Science and Technology, Yangzhou University, Jiangsu, 225009, China
| | - Zhuo Yang
- College of Physics Science and Technology, Yangzhou University, Jiangsu, 225009, China
| | - Chengao Ji
- College of Physics Science and Technology, Yangzhou University, Jiangsu, 225009, China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Yusong Tu
- College of Physics Science and Technology, Yangzhou University, Jiangsu, 225009, China
| | - Guangyu Du
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- Department of Applied Physics, The Hong Kong Polytechnic University, Hunghom, Kowloon, 999077, Hong Kong
| | - Songhua Cai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hunghom, Kowloon, 999077, Hong Kong
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
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12
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The Growth of High-Quality Hexagonal GaTe Nanosheets Induced by ZnO Nanocrystals. CRYSTALS 2022. [DOI: 10.3390/cryst12050627] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
The monoclinic and hexagonal gallium tellurides (m-GaTe and h-GaTe) show different applications in optoelectronic devices. Compared to the m-GaTe, the h-GaTe is a metastable phase, which generally exists in ultrathin samples and is difficult to obtain by direct chemical reaction. Herein, a hexagonal ZnO-induced crystal growth strategy was used for the design and fabrication of h-GaTe. The high-quality h-GaTe nanosheets were successfully grown on the (001) surface of hexagonal ZnO by the chemical vapor deposition method under ambient pressure. The SEM, XPS, XRD, and HRTEM characterizations uncovered a flower-like nanosheet morphology and a hexagonal crystal structure for the obtained GaTe samples. Meanwhile, the conductive atomic force microscope measurement indicates that the obtained h-GaTe nanosheet is a p-type semiconductor. Based on the electron localization function simulation, the lattice-induced crystal growth of h-GaTe was demonstrated. The results give an insight into the synthesis of metastable phase crystal and open an avenue for fabricating new two-dimensional devices by p-type h-GaTe.
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13
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Lin H, Jiang A, Xing S, Li L, Cheng W, Li J, Miao W, Zhou X, Tian L. Advances in Self-Powered Ultraviolet Photodetectors Based on P-N Heterojunction Low-Dimensional Nanostructures. NANOMATERIALS 2022; 12:nano12060910. [PMID: 35335723 PMCID: PMC8953703 DOI: 10.3390/nano12060910] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/11/2022] [Revised: 03/02/2022] [Accepted: 03/03/2022] [Indexed: 02/04/2023]
Abstract
Self-powered ultraviolet (UV) photodetectors have attracted considerable attention in recent years because of their vast applications in the military and civil fields. Among them, self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures are a very attractive research field due to combining the advantages of low-dimensional semiconductor nanostructures (such as large specific surface area, excellent carrier transmission channel, and larger photoconductive gain) with the feature of working independently without an external power source. In this review, a selection of recent developments focused on improving the performance of self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures from different aspects are summarized. It is expected that more novel, dexterous, and intelligent photodetectors will be developed as soon as possible on the basis of these works.
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Affiliation(s)
- Haowei Lin
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
- Henan International Joint Laboratory of Nano-Photoelectric Magnetic Materials, Henan University of Technology, Zhengzhou 450001, China
- Correspondence:
| | - Ao Jiang
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Shibo Xing
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Lun Li
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Wenxi Cheng
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Jinling Li
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Wei Miao
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Xuefei Zhou
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Li Tian
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
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14
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Duan J, Chava P, Ghorbani-Asl M, Lu Y, Erb D, Hu L, Echresh A, Rebohle L, Erbe A, Krasheninnikov AV, Helm M, Zeng YJ, Zhou S, Prucnal S. Self-Driven Broadband Photodetectors Based on MoSe 2/FePS 3 van der Waals n-p Type-II Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2022; 14:11927-11936. [PMID: 35191687 DOI: 10.1021/acsami.1c24308] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Two-dimensional (2D) van der Waals materials with broadband optical absorption are promising candidates for next-generation UV-vis-NIR photodetectors. FePS3, one of the emerging antiferromagnetic van der Waals materials with a wide bandgap and p-type conductivity, has been reported as an excellent candidate for UV optoelectronics. However, a high sensitivity photodetector with a self-driven mode based on FePS3 has not yet been realized. Here, we report a high-performance and self-powered photodetector based on a multilayer MoSe2/FePS3 type-II n-p heterojunction with a working range from 350 to 900 nm. The presented photodetector operates at zero bias and at room temperature under ambient conditions. It exhibits a maximum responsivity (Rmax) of 52 mA W-1 and an external quantum efficiency (EQEmax) of 12% at 522 nm, which are better than the characteristics of its individual constituents and many other photodetectors made of 2D heterostructures. The high performance of MoSe2/FePS3 is attributed to the built-in electric field in the MoSe2/FePS3 n-p junction. Our approach provides a promising platform for broadband self-driven photodetector applications.
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Affiliation(s)
- Juanmei Duan
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, Dresden D-01328, Germany
- Technische Universität Dresden, Dresden D-01062, Germany
| | - Phanish Chava
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, Dresden D-01328, Germany
- Technische Universität Dresden, Dresden D-01062, Germany
| | - Mahdi Ghorbani-Asl
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, Dresden D-01328, Germany
| | - YangFan Lu
- State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China
| | - Denise Erb
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, Dresden D-01328, Germany
| | - Liang Hu
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Institute of Advanced Magnetic Materials, Hangzhou Dianzi University, Hangzhou 310018, P. R. China
- State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China
| | - Ahmad Echresh
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, Dresden D-01328, Germany
| | - Lars Rebohle
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, Dresden D-01328, Germany
| | - Artur Erbe
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, Dresden D-01328, Germany
| | - Arkady V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, Dresden D-01328, Germany
- Department of Applied Physics, Aalto University School of Science, Aalto FI-00076, Finland
| | - Manfred Helm
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, Dresden D-01328, Germany
| | - Yu-Jia Zeng
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Shengqiang Zhou
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, Dresden D-01328, Germany
| | - Slawomir Prucnal
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, Dresden D-01328, Germany
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15
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 106] [Impact Index Per Article: 53.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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16
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Abdelrahman A, Erchiqui F, Nedil M. Fabricated wearable and flexible chip composed strain of gallium and silver metals composites assembled on graphene inside PDMS matrix. J INDIAN CHEM SOC 2022. [DOI: 10.1016/j.jics.2022.100345] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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17
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Guo S, Chen Z, Weller D, Wang X, Ding C, Wang Y, Liu R. Toward High-Performance Self-Driven Photodetectors via Multistacking Van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2021; 13:56438-56445. [PMID: 34784189 DOI: 10.1021/acsami.1c14058] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The unique optoelectronic properties of layered van der Waals (vdW) heterostructures open up exciting opportunities for high-performance photodetectors. Self-driven photodetectors are desirable for reducing power consumption and minimizing the device size. Here, a semiconductor-insulator-semiconductor-type multistacking WSe2/graphene/h-BN/MoS2 vdW heterostructure is demonstrated to realize an enhanced self-powered photodetector with a high on-off current ratio of about 1.2 × 105 and a high photoresponsivity of 3.6 A/W without applying bias, which is the highest photoresponsivity ever reported for self-powered photodetectors. Because of the difference in the Fermi level, a built-in electrical field is formed at the WSe2/graphene junction, where the photoexcited electrons and holes can be efficiently separated and the carriers can easily tunnel through the MoS2/h-BN junction driven by the enhanced potential. Therefore, the enhanced self-powered photodetection is attributable to highly efficient carrier tunneling through large h-BN electron barriers. By comparison, when the stacking sequence is changed to make WSe2/MoS2 p-n heterojunctions lay on graphene/h-BN, the self-powered photocurrent is still generated because of the type-II band alignment, which exhibits lower but still relevant values with a light on/off ratio of ∼8 × 103 and a photoresponsivity of ∼2.39 A/W. The efficient enhancement demonstrates that multistacking heterostructures significantly elevate the performance of self-powered photodetectors, providing a feasible route to develop high-performance self-powered optoelectronic devices and extend their applications in integrated optoelectronic systems.
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Affiliation(s)
- Shuai Guo
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
- Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, P. R. China
| | - Zhuo Chen
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Dieter Weller
- Faculty of Physics and Center for Nanointegration (CENIDE), University of Duisburg-Essen, Lotharstr. 1, Duisburg 47057, Germany
| | - Xianshuang Wang
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Chunjie Ding
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Yingying Wang
- Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, P. R. China
| | - Ruibin Liu
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
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18
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Wines D, Saritas K, Ataca C. A pathway toward high-throughput quantum Monte Carlo simulations for alloys: A case study of two-dimensional (2D) GaS xSe 1-x. J Chem Phys 2021; 155:194112. [PMID: 34800964 DOI: 10.1063/5.0070423] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
The study of alloys using computational methods has been a difficult task due to the usually unknown stoichiometry and local atomic ordering of the different structures experimentally. In order to combat this, first-principles methods have been coupled with statistical methods such as the cluster expansion formalism in order to construct the energy hull diagram, which helps to determine if an alloyed structure can exist in nature. Traditionally, density functional theory (DFT) has been used in such workflows. In this paper, we propose to use chemically accurate many-body variational Monte Carlo (VMC) and diffusion Monte Carlo (DMC) methods to construct the energy hull diagram of an alloy system due to the fact that such methods have a weaker dependence on the starting wavefunction and density functional, scale similarly to DFT with the number of electrons, and have had demonstrated success for a variety of materials. To carry out these simulations in a high-throughput manner, we propose a method called Jastrow sharing, which involves recycling the optimized Jastrow parameters between alloys with different stoichiometries. We show that this eliminates the need for extra VMC Jastrow optimization calculations and results in significant computational cost savings (on average 1/4 savings of total computational time). Since it is a novel post-transition metal chalcogenide alloy series that has been synthesized in its few-layer form, we used monolayer GaSxSe1-x as a case study for our workflow. By extensively testing our Jastrow sharing procedure for monolayer GaSxSe1-x and quantifying the cost savings, we demonstrate how a pathway toward chemically accurate high-throughput simulations of alloys can be achieved using many-body VMC and DMC methods.
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Affiliation(s)
- Daniel Wines
- Department of Physics, University of Maryland Baltimore County, Baltimore, Maryland 21250, USA
| | - Kayahan Saritas
- Department of Applied Physics, Yale University, New Haven, Connecticut 06520, USA
| | - Can Ataca
- Department of Physics, University of Maryland Baltimore County, Baltimore, Maryland 21250, USA
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19
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Li F, Chen M, Wang Y, Zhu X, Zhang X, Zou Z, Zhang D, Yi J, Li Z, Li D, Pan A. Strain-controlled synthesis of ultrathin hexagonal GaTe/MoS 2 heterostructure for sensitive photodetection. iScience 2021; 24:103031. [PMID: 34541467 PMCID: PMC8437799 DOI: 10.1016/j.isci.2021.103031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2021] [Revised: 06/15/2021] [Accepted: 08/20/2021] [Indexed: 11/18/2022] Open
Abstract
Ultrathin hexagonal GaTe, with relatively high charge density, holds great potential in the field of optoelectronic devices. However, the thermodynamical stability limits it fabrications as well as applications. Here, by introducing two-dimensional MoS2 as the substrate, we successfully realized the phase-controlled synthesis of ultrathin h-GaTe, leading to high-quality h-GaTe/MoS2 heterostructures. Theoretical calculation studies reveal that GaTe with hexagonal phase is more thermodynamically stable on MoS2 templates, which can be attributed to the strain stretching and the formation energy reduction. Based on the achieved p-n heterostructures, optoelectronic devices are designed and probed, where remarkable photoresponsivity (32.5 A/W) and fast photoresponse speed (<50 μs) are obtained, indicating well-behaved photo-sensing behaviors. The study here could offer a good reference for the controlled growth of the relevant materials, and the achieved heterostructure will find promising applications in future integrated electronic and optoelectronic devices and systems.
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Affiliation(s)
- Fang Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
- Key Laboratory of Inferior Crude Oil Processing of Guangdong Provincial Higher Education Institutes, School of Chemical Engineering, Guangdong University of Petrochemical Technology, Maoming, Guangdong 525000, China
| | - Mingxing Chen
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China
| | - Yajuan Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Xiaoli Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Xuehong Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Zixing Zou
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Danliang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Jiali Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Ziwei Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
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20
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Self-Powered Sensors: New Opportunities and Challenges from Two-Dimensional Nanomaterials. Molecules 2021; 26:molecules26165056. [PMID: 34443640 PMCID: PMC8398567 DOI: 10.3390/molecules26165056] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/31/2021] [Revised: 08/17/2021] [Accepted: 08/17/2021] [Indexed: 11/22/2022] Open
Abstract
Nanomaterials have gained considerable attention over the last decade, finding applications in emerging fields such as wearable sensors, biomedical care, and implantable electronics. However, these applications require miniaturization operating with extremely low power levels to conveniently sense various signals anytime, anywhere, and show the information in various ways. From this perspective, a crucial field is technologies that can harvest energy from the environment as sustainable, self-sufficient, self-powered sensors. Here we revisit recent advances in various self-powered sensors: optical, chemical, biological, medical, and gas. A timely overview is provided of unconventional nanomaterial sensors operated by self-sufficient energy, focusing on the energy source classification and comparisons of studies including self-powered photovoltaic, piezoelectric, triboelectric, and thermoelectric technology. Integration of these self-operating systems and new applications for neuromorphic sensors are also reviewed. Furthermore, this review discusses opportunities and challenges from self-powered nanomaterial sensors with respect to their energy harvesting principles and sensing applications.
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Niranjan MK, Ghosh A. Theoretical investigation of lattice dynamics, infrared reflectivity, polarized Raman spectra and nature of interlayer coupling in two-dimensional layered gallium sulfide. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:405001. [PMID: 34256354 DOI: 10.1088/1361-648x/ac13fa] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2021] [Accepted: 07/13/2021] [Indexed: 06/13/2023]
Abstract
Gallium sulfide (GaS) is a highly promising two-dimensional layered semiconductor owing to its remarkable thickness dependent electronic and physical properties. In this article, we perform a comprehensiveab initiostudy of lattice dynamics, mode symmetry assignments, polarized Raman and infrared (IR) reflectivity spectra of GaS system. Polarized Raman spectra are obtained for different light polarization set-ups of incoming and scattered light. The frequencies of all allowed vibrational modes at the zone-centre are calculated and symmetry labels are assigned. Furthermore, the variation of frequencies & intensities of Raman/IR active modes of ultrathin GaS films (few layers) as function of film thickness is studied. In addition, we also explore the nature of weak interlayer coupling in GaS. The weak forces between the GaS layers are usually assumed to be due to interlayer van der Waals (vdW) interaction. However, this assumption has not been reasonably explained in reported experimental studies. Our study strongly suggests that weak interlayer interactions in GaS may be primarily electrostatic (Coulomb) in nature and therefore the contribution of vdW interactions to layer-layer coupling and lattice dynamics may be significantly lower than that of electrostatic interaction. The suggested nature of interlayer coupling in GaS and related III-VI semiconductors may have important implications in determination of their various physical properties.
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Affiliation(s)
- Manish K Niranjan
- Department of Physics, Indian Institute of Technology, Hyderabad, India
| | - Arghya Ghosh
- Department of Physics, Indian Institute of Technology, Hyderabad, India
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22
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Wang F, Zou X, Xu M, Wang H, Wang H, Guo H, Guo J, Wang P, Peng M, Wang Z, Wang Y, Miao J, Chen F, Wang J, Chen X, Pan A, Shan C, Liao L, Hu W. Recent Progress on Electrical and Optical Manipulations of Perovskite Photodetectors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2100569. [PMID: 34032025 PMCID: PMC8292906 DOI: 10.1002/advs.202100569] [Citation(s) in RCA: 49] [Impact Index Per Article: 16.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2021] [Revised: 03/18/2021] [Indexed: 06/01/2023]
Abstract
Photodetectors built from conventional bulk materials such as silicon, III-V or II-VI compound semiconductors are one of the most ubiquitous types of technology in use today. The past decade has witnessed a dramatic increase in interest in emerging photodetectors based on perovskite materials driven by the growing demands for uncooled, low-cost, lightweight, and even flexible photodetection technology. Though perovskite has good electrical and optical properties, perovskite-based photodetectors always suffer from nonideal quantum efficiency and high-power consumption. Joint manipulation of electrons and photons in perovskite photodetectors is a promising strategy to improve detection efficiency. In this review, electrical and optical characteristics of typical types of perovskite photodetectors are first summarized. Electrical manipulations of electrons in perovskite photodetectors are discussed. Then, artificial photonic nanostructures for photon manipulations are detailed to improve light absorption efficiency. By reviewing the manipulation of electrons and photons in perovskite photodetectors, this review aims to provide strategies to achieve high-performance photodetectors.
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Affiliation(s)
- Fang Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Xuming Zou
- Key Laboratory for Micro‐Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and DevicesSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Mengjian Xu
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
- Terahertz Technology Innovation Research InstituteTerahertz Spectrum and Imaging Technology Cooperative Innovation CenterShanghai Key Lab of Modern Optical SystemUniversity of Shanghai for Science and TechnologyShanghai200093China
| | - Hao Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Hailu Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Huijun Guo
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
| | - Jiaxiang Guo
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Peng Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Meng Peng
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Zhen Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Yang Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
| | - Jinshui Miao
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
- Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesHangzhou310024China
| | - Fansheng Chen
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
| | - Jianlu Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
| | - Anlian Pan
- Key Laboratory for Micro‐Nano Physics and Technology of Hunan ProvinceCollege of Materials Science and EngineeringHunan UniversityChangsha410082China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesSchool of Physics and EngineeringZhengzhou UniversityZhengzhou45000China
| | - Lei Liao
- Key Laboratory for Micro‐Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and DevicesSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Weida Hu
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
- Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesHangzhou310024China
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Liu Y, Wu X, Guo W, Li M, Niu X, Yao J, Yu Y, Xing B, Yan X, Zhang S, Sha J, Wang Y. Self-powered and high responsivity photodetector based on a n-Si/p-GaTe heterojunction. NANOTECHNOLOGY 2021; 32:225204. [PMID: 33636718 DOI: 10.1088/1361-6528/abea39] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2020] [Accepted: 02/26/2021] [Indexed: 06/12/2023]
Abstract
Heterojunction integrated by two-dimensional/three-dimensional materials has shown great potential applications in optoelectronic devices because of its fast response speed, high specific detectivity and broad spectral response. In this work, the vertical n-Si/p-GaTe heterojunction has been designed and fabricated, which shows a high responsivity up to 5.73 A W-1and a fast response time of 20μs at zero bias benifitting from the high efficiency of light absorption, internal photocurrent gain and strong built-in electrical field. A specific detectivity of 1012Jones and a broad spectral response ranging from 300 to 1100 nm can also be achieved. This work provides an alternative strategy for high-performance self-powered optoelectronic devices.
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Affiliation(s)
- Yali Liu
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Xiaoxiang Wu
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Wenxuan Guo
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Mengge Li
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Xinyue Niu
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Jiadong Yao
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Ying Yu
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Boran Xing
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Xiaoyuan Yan
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Shucheng Zhang
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Jian Sha
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Yewu Wang
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
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Tareen AK, Khan K, Aslam M, Zhang H, Liu X. Recent progress, challenges, and prospects in emerging group-VIA Xenes: synthesis, properties and novel applications. NANOSCALE 2021; 13:510-552. [PMID: 33404570 DOI: 10.1039/d0nr07444f] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
The discovery of graphene (G) attracted considerable attention to the study of other novel two-dimensional materials (2DMs), which is identified as modern day "alchemy" since researchers are converting the majority of promising periodic table elements into 2DMs. Among the family of 2DMs, the newly invented monoelemental, atomically thin 2DMs of groups IIIA-VIA, called "Xenes" (where, X = IIIA-VIA group elements, and "ene" is the Latin word for nanosheets (NSs)), are a very active area of research for the fabrication of future nanodevices with high speed, low cost and elevated efficiency. Currently, any novel structure of 2DMs from the typical Xenes will probably be applicable in electronic technology. Analysis of their possible highly sensitive synthesis and characterization present opportunities for theoretically examining proposed 2D-Xenes with atomic precision in ideal circumstances, thus providing theoretical predictions for experimental support. Several theoretically predicted and experimentally synthesized 2D-Xene materials have been investigated for the group-VIA elements (tellurene (2D-Te), and selenene (2D-Se)), which are similar to topological insulators (TIs), thus potentially rendering them suitable materials for application in upcoming nanodevices. Although the investigation and device application of these materials are still in their infancy, theoretical studies and a few experiment-based investigations have proven that they are complementary to conventional (i.e., layered bulk-derived) 2DMs. This review focuses on the synthesis of novel group-VIA Xenes (2D-Te and 2D-Se) and summarizes the current development in understanding their basic properties, with the current advancement in signifying device applications. Lastly, the future research prospects, further advanced applications and associated shortcomings of the group-VIA Xenes are summarized and highlighted.
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Affiliation(s)
- Ayesha Khan Tareen
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China. and Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy, Shenzhen University, Shenzhen, 518060, P.R. China.
| | - Karim Khan
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy, Shenzhen University, Shenzhen, 518060, P.R. China. and School of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan (DGUT), Dongguan, 523808, Guangdong Province, P. R. China and Government Degree college Paharpur, Gomel University, Dera Ismail Khan, Khyber Pakhtoonkhwa (K.P.K.), 29220, Islamic Republic of Pakistan
| | - Muhammad Aslam
- Government Degree college Paharpur, Gomel University, Dera Ismail Khan, Khyber Pakhtoonkhwa (K.P.K.), 29220, Islamic Republic of Pakistan
| | - Han Zhang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy, Shenzhen University, Shenzhen, 518060, P.R. China.
| | - Xinke Liu
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China.
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25
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Chen FF, Ye Y, Wang X, Zhou B, Xu LP, Jiang K, Zhang JZ, Hu ZG, Chu JH. Optical and electronic bandgap manipulation behaviors of MoS2/TaSe2 van der Waals heterostructures: Experiment and theory. Chem Phys Lett 2020. [DOI: 10.1016/j.cplett.2020.137926] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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26
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Wines D, Saritas K, Ataca C. A first-principles Quantum Monte Carlo study of two-dimensional (2D) GaSe. J Chem Phys 2020; 153:154704. [DOI: 10.1063/5.0023223] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023] Open
Affiliation(s)
- Daniel Wines
- Department of Physics, University of Maryland Baltimore County, Baltimore, Maryland 21250, USA
| | - Kayahan Saritas
- Department of Applied Physics, Yale University, New Haven, Connecticut 06520, USA
| | - Can Ataca
- Department of Physics, University of Maryland Baltimore County, Baltimore, Maryland 21250, USA
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27
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Gong Y, Lin Z, Chen YX, Khan Q, Wang C, Zhang B, Nie G, Xie N, Li D. Two-Dimensional Platinum Diselenide: Synthesis, Emerging Applications, and Future Challenges. NANO-MICRO LETTERS 2020; 12:174. [PMID: 34138169 PMCID: PMC7770737 DOI: 10.1007/s40820-020-00515-0] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2020] [Accepted: 08/04/2020] [Indexed: 05/25/2023]
Abstract
In recent years, emerging two-dimensional (2D) platinum diselenide (PtSe2) has quickly attracted the attention of the research community due to its novel physical and chemical properties. For the past few years, increasing research achievements on 2D PtSe2 have been reported toward the fundamental science and various potential applications of PtSe2. In this review, the properties and structure characteristics of 2D PtSe2 are discussed at first. Then, the recent advances in synthesis of PtSe2 as well as their applications are reviewed. At last, potential perspectives in exploring the application of 2D PtSe2 are reviewed.
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Affiliation(s)
- Youning Gong
- Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Zhitao Lin
- Faculty of Information Technology, Macau University of Science and Technology, Macau, 519020, People's Republic of China
| | - Yue-Xing Chen
- Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Qasim Khan
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, ON, Canada
| | - Cong Wang
- Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Bin Zhang
- Otolaryngology Department and Biobank of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Guohui Nie
- Otolaryngology Department and Biobank of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Ni Xie
- Otolaryngology Department and Biobank of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Delong Li
- Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China.
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Nalwa HS. A review of molybdenum disulfide (MoS 2) based photodetectors: from ultra-broadband, self-powered to flexible devices. RSC Adv 2020; 10:30529-30602. [PMID: 35516069 PMCID: PMC9056353 DOI: 10.1039/d0ra03183f] [Citation(s) in RCA: 47] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2020] [Accepted: 07/17/2020] [Indexed: 12/23/2022] Open
Abstract
Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.
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Affiliation(s)
- Hari Singh Nalwa
- Advanced Technology Research 26650 The Old Road Valencia California 91381 USA
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29
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Wang W, Zeng X, Warner JH, Guo Z, Hu Y, Zeng Y, Lu J, Jin W, Wang S, Lu J, Zeng Y, Xiao Y. Photoresponse-Bias Modulation of a High-Performance MoS 2 Photodetector with a Unique Vertically Stacked 2H-MoS 2/1T@2H-MoS 2 Structure. ACS APPLIED MATERIALS & INTERFACES 2020; 12:33325-33335. [PMID: 32583658 DOI: 10.1021/acsami.0c04048] [Citation(s) in RCA: 36] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Monolayer 2H-phase MoS2-based photodetectors exhibit high photon absorption but suffer from low photoresponse, which severely limits their applications in optoelectronic fields. The metallic 1T phase of MoS2, while transporting carriers faster, shows negligible response to visible light, which limits its usage in photodetectors. Herein, we propose an ultrafast-response MoS2-based photodetector having a channel that consists of a 2H-MoS2 sensitizing monolayer on top of 1T@2H-MoS2. The 1T@2H-MoS2 layer has a thickness of several nanometers and is a mixture of metallic 1T-MoS2 and semiconducting 2H-MoS2, imparting metal-like properties to the photodetector. Compared with the monolayer 2H-MoS2 photodetector, we observed a drastic increase in the photoresponse of the 2H-MoS2/1T@2H-MoS2 vertically stacked photodetector to a value of 1917 A W-1. Owing to the presence of metallic 1T-MoS2 within the metal-like 1T@2H-MoS2, the performance of the 2H-MoS2/1T@2H-MoS2 vertically stacked photodetector is voltage bias-modulated with an external quantum efficiency (EQE) of up to 448,384% and a specific detectivity of up to ∼1011 Jones. The higher carrier density and higher mobility of the 1T@2H-MoS2 layer explain the better bias-modulated performance. In addition, the interface between 2H-MoS2 and 1T@2H-MoS2 ensures fewer dangling bonds and reduced lattice mismatching. Thus, this study presents an exclusive vertically stacked MoS2-based photodetector that lays the foundation for the development of photodetectors exhibiting higher photoresponse.
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Affiliation(s)
- Wenzhao Wang
- School of Optical and Electronic Information, Huazhong University of Science & Technology, Wuhan 430074, People's Republic of China
| | - Xiangbin Zeng
- School of Optical and Electronic Information, Huazhong University of Science & Technology, Wuhan 430074, People's Republic of China
| | - Jamie H Warner
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Zhengyu Guo
- School of Optical and Electronic Information, Huazhong University of Science & Technology, Wuhan 430074, People's Republic of China
| | - Yishuo Hu
- School of Optical and Electronic Information, Huazhong University of Science & Technology, Wuhan 430074, People's Republic of China
| | - Yang Zeng
- School of Optical and Electronic Information, Huazhong University of Science & Technology, Wuhan 430074, People's Republic of China
| | - Jingjing Lu
- School of Optical and Electronic Information, Huazhong University of Science & Technology, Wuhan 430074, People's Republic of China
| | - Wen Jin
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science & Technology, Wuhan 430074, People's Republic of China
- Faculty of Engineering and Environment, Northumbria University, Newcastle upon Tyne NE1 8ST, United Kingdom
| | - Shibo Wang
- School of Optical and Electronic Information, Huazhong University of Science & Technology, Wuhan 430074, People's Republic of China
| | - Jichang Lu
- School of Optical and Electronic Information, Huazhong University of Science & Technology, Wuhan 430074, People's Republic of China
| | - Yirong Zeng
- School of Optical and Electronic Information, Huazhong University of Science & Technology, Wuhan 430074, People's Republic of China
| | - Yonghong Xiao
- School of Optical and Electronic Information, Huazhong University of Science & Technology, Wuhan 430074, People's Republic of China
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Roy S, Sharbirin AS, Lee Y, Kim WB, Kim TS, Cho K, Kang K, Jung HS, Kim J. Measurement of Quantum Yields of Monolayer TMDs Using Dye-Dispersed PMMA Thin Films. NANOMATERIALS 2020; 10:nano10061032. [PMID: 32481624 PMCID: PMC7353022 DOI: 10.3390/nano10061032] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/17/2020] [Revised: 05/19/2020] [Accepted: 05/25/2020] [Indexed: 11/29/2022]
Abstract
In general, the quantum yields (QYs) of monolayer transition metal dichalcogenides (1L-TMDs) are low, typically less than 1% in their pristine state, significantly limiting their photonic applications. Many methods have been reported to increase the QYs of 1L-TMDs; however, the technical difficulties involved in the reliable estimation of these QYs have prevented the general assessment of these methods. Herein, we demonstrate the estimation of the QYs of 1L-TMDs using a poly methyl methacrylate (PMMA) thin film embedded with rhodamine 6G (R6G) as a reference specimen for measuring the QYs of 1L-TMDs. The PMMA/R6G composite films with thicknesses of 80 and 300 nm demonstrated spatially homogeneous emissions with the incorporation of well-dispersed R6G molecules, and may, therefore, be used as ideal reference specimens for the QY measurement of 1L-TMDs. Using our reference specimens, for which the QY ranged from 5.4% to 22.2% depending on the film thickness and R6G concentrations, we measured the QYs of the exfoliated or chemical vapor deposition (CVD)-grown 1L-WS2, -MoSe2, -MoS2, and -WSe2 TMDs. The convenient procedure proposed in this study for preparing the thin reference films and the simple protocol for the QY estimation of 1L-TMDs may enable accurate comparisons of the absolute QYs between the 1L-TMD samples, thereby enabling the development of a method to improve the QY of 1L-TMDs.
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Affiliation(s)
- Shrawan Roy
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea; (S.R.); (A.S.S.); (Y.L.)
| | - Anir S. Sharbirin
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea; (S.R.); (A.S.S.); (Y.L.)
| | - Yongjun Lee
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea; (S.R.); (A.S.S.); (Y.L.)
| | - Won Bin Kim
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Korea; (W.B.K.); (H.S.J.)
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea; (T.S.K.); (K.C.); (K.K.)
| | - Kiwon Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea; (T.S.K.); (K.C.); (K.K.)
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea; (T.S.K.); (K.C.); (K.K.)
| | - Hyun Suk Jung
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Korea; (W.B.K.); (H.S.J.)
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea; (S.R.); (A.S.S.); (Y.L.)
- Correspondence:
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Liu Y, Zhong Y, Wang C. Recent advances in self-actuation and self-sensing materials: State of the art and future perspectives. Talanta 2020; 212:120808. [PMID: 32113569 DOI: 10.1016/j.talanta.2020.120808] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/05/2019] [Revised: 02/03/2020] [Accepted: 02/04/2020] [Indexed: 12/13/2022]
Abstract
The contradiction between human's strong demand of fossil fuels and their limited reserves becomes increasingly severe. Without external power input, intelligent materials responding sharply and reversibly to various external stimuli are the topic of intense research these years, especially the self-actuation and self-sensing materials. The promising family of these materials will play a significant role in energy-saving, low-cost and environment-friendly intelligent systems in the future. This review summarizes the latest advances in self-actuation and self-sensing materials. The synthetic strategies, morphologies and performance of these materials are introduced, as well as their applications in energy harvest, self-powering sensors, wearable devices, etc. Finally, tentative conclusions and assessments regarding the opportunities and challenges for the future development of these materials are presented.
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Affiliation(s)
- Yushu Liu
- College of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou, Jiangsu Province, 225000, China; School of Computer Science and Technology, Harbin Institute of Technology, Weihai, Shandong Province, 264209, China
| | - Yunhao Zhong
- College of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou, Jiangsu Province, 225000, China
| | - Chengyin Wang
- College of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou, Jiangsu Province, 225000, China.
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Wang Q, Zhou C, Chai Y. Breaking symmetry in device design for self-driven 2D material based photodetectors. NANOSCALE 2020; 12:8109-8118. [PMID: 32236235 DOI: 10.1039/d0nr01326a] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
The advent of graphene and other two-dimensional (2D) materials offers great potential for optoelectronic applications. Various device structures and novel mechanisms have been proposed to realize photodetectors with unique detecting properties. In this minireview, we focus on a self-driven photodetector that has great potential for low-power or even powerless operation required in the internet of things and wearable electronics. To address the general principle of self-driven properties, we propose and elaborate the concept of symmetry breaking in 2D material based self-driven photodetectors. We discuss various mechanisms of breaking symmetry for self-driven photodetectors, including asymmetrical contact engineering, field-induced asymmetry, PN homojunctions, and PN heterostructures. Typical device examples based on these mechanisms are reviewed and compared. The performance of current self-driven photodetectors is critically assessed and future directions are discussed towards the target application fields.
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Affiliation(s)
- Qi Wang
- South China University of Technology, Guangzhou, China.
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Xin Y, Wang X, Chen Z, Weller D, Wang Y, Shi L, Ma X, Ding C, Li W, Guo S, Liu R. Polarization-Sensitive Self-Powered Type-II GeSe/MoS 2 van der Waals Heterojunction Photodetector. ACS APPLIED MATERIALS & INTERFACES 2020; 12:15406-15413. [PMID: 32159326 DOI: 10.1021/acsami.0c01405] [Citation(s) in RCA: 43] [Impact Index Per Article: 10.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Polarization-sensitive photodetectors are highly desirable for high-performance optical signal capture and stray light shielding in order to enhance the capability for detection and identification of targets in dark, haze, and other complex environments. Usually, filters and polarizers are utilized for conventional devices to achieve polarization-sensitive detection. Herein, to simplify the optical system, a two-dimensional self-powered polarization-sensitive photodetector is fabricated based on a stacked GeSe/MoS2 van der Waals (vdW) heterojunction which facilitates efficient separation and transportation of the photogenerated carriers because of type-II band alignment. Accordingly, a high-performance self-powered photodetector is achieved with merits of a very large on-off ratio photocurrent at zero bias of currently 104 and a high responsivity (Rλ) of 105 mA/W with an external quantum efficiency of 24.2%. Furthermore, a broad spectral photoresponse is extended from 380 to 1064 nm owing to the high absorption coefficient in a wide spectral region. One of the key benefits from these highly anisotropic orthorhombic structures of layered GeSe is self-powered polarization-sensitive detection with a peak/valley ratio of up to 2.95. This is realized irradiating with a 532 nm wavelength laser with which a maximum photoresponsivity of up to 590 mA/W is reached when the input polarization is parallel to the armchair direction. This work provides a facile route to fabricate self-powered polarization-sensitive photodetectors from GeSe/MoS2 vdW heterojunctions for integrated optoelectronic devices.
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Affiliation(s)
- Ye Xin
- Beijing Key Lab of Nano-Photonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Xinxin Wang
- Beijing Key Lab of Nano-Photonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Zhuo Chen
- Beijing Key Lab of Nano-Photonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Dieter Weller
- Faculty of Physics and Center for Nanointegration (CENIDE), University of Duisburg-Essen, Duisburg 47057, Germany
| | - Yingying Wang
- Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, P. R. China
| | - Lijie Shi
- Beijing Key Lab of Nano-Photonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Xiao Ma
- Beijing Key Lab of Nano-Photonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Chunjie Ding
- Beijing Key Lab of Nano-Photonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Wei Li
- Beijing Key Lab of Nano-Photonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Shuai Guo
- Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, P. R. China
| | - Ruibin Liu
- Beijing Key Lab of Nano-Photonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, P. R. China
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Liu H, Zhu X, Sun X, Zhu C, Huang W, Zhang X, Zheng B, Zou Z, Luo Z, Wang X, Li D, Pan A. Self-Powered Broad-band Photodetectors Based on Vertically Stacked WSe 2/Bi 2Te 3 p-n Heterojunctions. ACS NANO 2019; 13:13573-13580. [PMID: 31697469 DOI: 10.1021/acsnano.9b07563] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Semiconducting p-n heterojunctions, serving as the basic unit of modern electronic devices, such as photodetectors, solar-energy conversion devices, and light-emitting diodes (LEDs), have been extensively investigated in recent years. In this work, high performance self-powered broad-band photodetectors were fabricated based on vertically stacked p-n heterojunctions though combining p-type WSe2 with n-type Bi2Te3 via van der Waals (vdW) epitaxial growth. Devices based on the p-n heterojunction show obvious current rectification behaviors in the dark and superior photovoltaic characteristics under light irradiation. A maximum short circuit current of 18 nA and open circuit voltage of 0.25 V can be achieved with the illumination light of 633 nm (power density: 26.4 mW/cm2), which are among the highest values compared with the ever reported 2D vdW heterojunctions synthesized by chemical vapor deposition (CVD) method. Benefiting from the broad-band absorption of the heterostructures, the detection range can be expanded from the visible to near-infrared (375-1550 nm). Moreover, ascribing to the efficient carriers separation process at the junction interfaces, the devices can be further employed as self-powered photodetectors, where a fast response time (∼210 μs) and high responsivity (20.5 A/W at 633 nm and 27 mA/W at 1550 nm) are obtained under zero bias voltage. The WSe2/Bi2Te3 p-n heterojunction-based self-powered photodetectors with high photoresponsivity, fast photoresponse time, and broad spectral response will find potential applications in high speed and self-sufficient broad-band devices.
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Affiliation(s)
- Huawei Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Xiaoli Zhu
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Xingxia Sun
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
| | - Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
| | - Wei Huang
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Xuehong Zhang
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Biyuan Zheng
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Zixing Zou
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Ziyu Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
| | - Xiao Wang
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
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Mercado E, Zhou Y, Xie Y, Zhao Q, Cai H, Chen B, Jie W, Tongay S, Wang T, Kuball M. Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene. ACS OMEGA 2019; 4:18002-18010. [PMID: 31720504 PMCID: PMC6843706 DOI: 10.1021/acsomega.9b01752] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/13/2019] [Accepted: 09/05/2019] [Indexed: 05/25/2023]
Abstract
Layered semiconductor gallium telluride (GaTe) undergoes a rapid structural transition to a degraded phase in ambient conditions, limiting its utility in devices such as optical switches. In this work, we demonstrate that the degradation process in GaTe flakes can be slowed down dramatically via encapsulation with graphene. Through examining Raman signatures of degradation, we show that the choice of substrate significantly impacts the degradation rate and that the process is accelerated by the transfer of GaTe to hydrophilic substrates such as SiO2/Si. We find that double encapsulation with both top and bottom graphene layers can extend the lifetime of the material for several weeks. The photoresponse of flakes encapsulated in this way is only reduced by 17.6 ± 0.4% after 2 weeks, whereas unencapsulated flakes display no response after this time. Our results demonstrate the potential for alternative, van der Waals material-based passivation strategies in unstable layered materials and highlight the need for careful selection of substrates for 2D electronic devices.
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Affiliation(s)
- Elisha Mercado
- Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K
| | - Yan Zhou
- Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K
| | - Yong Xie
- School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, P. R. China
| | - Qinghua Zhao
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Hui Cai
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Bin Chen
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Wanqi Jie
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Tao Wang
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Martin Kuball
- Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K
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Ultrasensitive MoS 2 photodetector by serial nano-bridge multi-heterojunction. Nat Commun 2019; 10:4701. [PMID: 31619671 PMCID: PMC6796006 DOI: 10.1038/s41467-019-12592-w] [Citation(s) in RCA: 37] [Impact Index Per Article: 7.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2019] [Accepted: 09/12/2019] [Indexed: 12/04/2022] Open
Abstract
The recent reports of various photodetectors based on molybdenum disulfide (MoS2) field effect transistors showed that it was difficult to obtain optoelectronic performances in the broad detection range [visible–infrared (IR)] applicable to various fields. Here, by forming a mono-/multi-layer nano-bridge multi-heterojunction structure (more than > 300 junctions with 25 nm intervals) through the selective layer control of multi-layer MoS2, a photodetector with ultrasensitive optoelectronic performances in a broad spectral range (photoresponsivity of 2.67 × 106 A/W at λ = 520 nm and 1.65 × 104 A/W at λ = 1064 nm) superior to the previously reported MoS2-based photodetectors could be successfully fabricated. The nano-bridge multi-heterojunction is believed to be an important device technology that can be applied to broadband light sensing, highly sensitive fluorescence imaging, ultrasensitive biomedical diagnostics, and ultrafast optoelectronic integrated circuits through the formation of a nanoscale serial multi-heterojunction, just by adding a selective layer control process. Fabrication of photodetector devices by selective etching of 2D materials can enable broadband detection. Here, the authors design mono- and multi-layer nano-bridge multi-heterojunction photodetectors based on MoS2 with high responsivities of 2.67 × 106 A/W and 1.65 × 104 A/W in the visible–infrared wavelength range and fast photoresponse.
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37
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High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region. Nat Commun 2019; 10:4663. [PMID: 31604944 PMCID: PMC6789142 DOI: 10.1038/s41467-019-12707-3] [Citation(s) in RCA: 96] [Impact Index Per Article: 19.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/30/2019] [Accepted: 09/18/2019] [Indexed: 12/05/2022] Open
Abstract
Van der Waals (vdW) heterodiodes based on two-dimensional (2D) materials have shown tremendous potential in photovoltaic detectors and solar cells. However, such 2D photovoltaic devices are limited by low quantum efficiencies due to the severe interface recombination and the inefficient contacts. Here, we report an efficient MoS2/AsP vdW hetero-photodiode utilizing a unilateral depletion region band design and a narrow bandgap AsP as an effective carrier selective contact. The unilateral depletion region is verified via both the Fermi level and the infrared response measurements. The device demonstrates a pronounced photovoltaic behavior with a short-circuit current of 1.3 μA and a large open-circuit voltage of 0.61 V under visible light illumination. Especially, a high external quantum efficiency of 71%, a record high power conversion efficiency of 9% and a fast response time of 9 μs are achieved. Our work suggests an effective scheme to design high-performance photovoltaic devices assembled by 2D materials. Photovoltaic devices based on 2D materials still suffer from low quantum efficiencies due to interfacial charge recombination and inefficient contacts. Here, the authors design photovoltaic detectors and photodiodes based on MoS2 and doped AsP heterojunction with unilateral depletion region reporting high external quantum efficiency of 71% under zero applied bias.
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Wang J, Li J, Lan S, Fang C, Shen H, Xiong Q, Li D. Controllable Growth of Centimeter-Sized 2D Perovskite Heterostructures for Highly Narrow Dual-Band Photodetectors. ACS NANO 2019; 13:5473-5484. [PMID: 31009561 DOI: 10.1021/acsnano.9b00259] [Citation(s) in RCA: 38] [Impact Index Per Article: 7.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Heterostructures consisting of 2D layered perovskites are expected to exhibit interesting physical phenomena inaccessible to the single 2D perovskites and can greatly extend their functionalities for electronic and optoelectronic applications. Herein, we develop a solution method to synthesize (C4H9NH3)2PbI4/(C4H9NH3)2(CH3NH3)Pb2I7 heterostructures with centimeter size, high phase purity, controllable thickness and junction depth, high crystalline quality, and great stability for highly narrow dual-band photodetectors. On the basis of the different lattice constant, solubility, and growth rate between (C4H9NH3)2PbI4 and (C4H9NH3)2(CH3NH3)Pb2I7, the designed synthetic method allows to first grow the (C4H9NH3)2PbI4 at the water-air interface and subsequently the (C4H9NH3)2(CH3NH3)Pb2I7 layer is formed via a diffusion process. Such a growth process provides an efficient way for us to readily obtain heterostructures with various thickness and junction depth by controlling the concentration, reaction temperature, and time. The formation of heterostructures has been verified by X-ray diffraction, cross-section photoluminescence, and reflection spectroscopy with the estimated junction width below 100 nm. Photodetectors based on such heterostructures exhibit low dark current (∼10-12 A), high on-off current ratio (∼103), and highly narrow dual-band spectral response with a full-width at half-maximum (fwhm) of 20 nm at 540 nm and 34 nm at 610 nm. The high performance can be attributed to the high crystalline quality of the heterostructures and the extremely large resistance in the out-of-plane direction. The synthetic strategy is versatile for other 2D perovskites, and the narrow dual-band spectral response with all fwhm < 40 nm can be continuously tuned from red to blue by properly changing the halide compositions.
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Affiliation(s)
- Jun Wang
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan , 430074 , China
| | - Junze Li
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan , 430074 , China
| | - Shangui Lan
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan , 430074 , China
| | - Chen Fang
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan , 430074 , China
| | - Hongzhi Shen
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan , 430074 , China
| | - Qihua Xiong
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences , Nanyang Technological University , Singapore 637371 , Singapore
- NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering , Nanyang Technological University , Singapore 639798 , Singapore
| | - Dehui Li
- School of Optical and Electronic Information , Huazhong University of Science and Technology , Wuhan , 430074 , China
- Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan , 430074 , China
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Wang L, Zou X, Lin J, Jiang J, Liu Y, Liu X, Zhao X, Liu YF, Ho JC, Liao L. Perovskite/Black Phosphorus/MoS 2 Photogate Reversed Photodiodes with Ultrahigh Light On/Off Ratio and Fast Response. ACS NANO 2019; 13:4804-4813. [PMID: 30938515 DOI: 10.1021/acsnano.9b01713] [Citation(s) in RCA: 32] [Impact Index Per Article: 6.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
As compared with epitaxial semiconductor devices, two-dimensional (2D) heterostructures offer alternative facile platforms for many optoelectronic devices. Among them, photovoltaic based photodetectors can give fast response, while the photogate devices can lead to high responsivity. Here, we report a 2D photogate photodiode, which combines the benefits of 2D black phosphorus/MoS2 photodiodes with the emerging potential of perovskite, to achieve both fast response and high responsivity. This device architecture is constructed based on the fast photovoltaic operation together with the high-gain photogating effect. Under reverse bias condition, the device exhibits high responsivity (11 A/W), impressive detectivity (1.3 × 1012 Jones), fast response (150/240 μs), and low dark current (3 × 10-11 A). All these results are already much better in nearly all aspects of performance than the previously reported 2D photodiodes operating in reverse bias, achieving the optimal balance between all figure-of-merits. Importantly, with a zero bias, the device can also yield high detectivity (3 × 1011 Jones), ultrahigh light on/off ratio (3 × 107), and extremely high external quantum efficiency (80%). This device architecture thus has a promise for high-efficiency photodetection and photovoltaic energy conversion.
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Affiliation(s)
- Liming Wang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics , Hunan University , Changsha 410082 , China
| | - Xuming Zou
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics , Hunan University , Changsha 410082 , China
| | - Jun Lin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics , Hunan University , Changsha 410082 , China
| | - Jiayang Jiang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics , Hunan University , Changsha 410082 , China
| | - Yuan Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics , Hunan University , Changsha 410082 , China
| | - Xingqiang Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics , Hunan University , Changsha 410082 , China
| | - Xu Zhao
- College of Physics and Material Science , Henan Normal University , Xinxiang 453007 , China
| | - Yu Fang Liu
- College of Physics and Material Science , Henan Normal University , Xinxiang 453007 , China
| | - Johnny C Ho
- Department of Physics and Materials Science , City University of Hong Kong , Tat Chee Avenue , Kowloon, Hong Kong SAR 999077 , China
| | - Lei Liao
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics , Hunan University , Changsha 410082 , China
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Zhang X, Xiao S, Nan H, Mo H, Wan X, Gu X, Ostrikov KK. Controllable one-step growth of bilayer MoS 2-WS 2/WS 2 heterostructures by chemical vapor deposition. NANOTECHNOLOGY 2018; 29:455707. [PMID: 30160236 DOI: 10.1088/1361-6528/aaddc5] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Heterostructures of two-dimensional (2D) transition metal dichalcogenides (TMDs) offer attractive prospects for practical applications by combining unique physical properties that are distinct from those of traditional structures. In this paper, we demonstrate a three-stage chemical vapor deposition method for the growth of bilayer MoS2-WS2/WS2 heterostructures with the bottom layers being the lateral MoS2-center/WS2-edge monolayer heterostructures and the top layers being the WS2 monolayers. The alternative growth of lateral and vertical heterostructures can be realized by adjusting both the temperature and the carrier gas flow direction. The combined effect of both reverse gas flow and higher growing temperature can promote the epitaxial growth of second layer on the activated nucleation centers of the first monolayer heterostructures. By using customized temperature profiles, single heterostructures including monolayer lateral MoS2-WS2 heterostructures and bilayer lateral WS2(2L)-MoS2(2L) heterostructures could also be obtained. Atomic force microscopy, photoluminescence and Raman mapping studies clearly reveal that these different heterostructure samples are highly uniform. These results thus provide a promising and efficient method for the synthesis of complex heterostructures based on different TMDs materials, which would greatly expand the heterostructure family and broaden their applications.
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Affiliation(s)
- Xiumei Zhang
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China. School of Science, Jiangnan University, Wuxi 214122, People's Republic of China
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41
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Park HJ, Park CJ, Kim JY, Kim MS, Kim J, Joo J. Hybrid Characteristics of MoS 2 Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor. ACS APPLIED MATERIALS & INTERFACES 2018; 10:32556-32566. [PMID: 30183249 DOI: 10.1021/acsami.8b10525] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
An n-type MoS2 monolayer grown by chemical vapor deposition method was partially hybridized with an organic semiconducting p-type tetracene thin film. The photoluminescence (PL) intensity in the hybrid region of the MoS2/tetracene is clearly lower than that of pristine tetracene because of the charge-transfer effect, which was confirmed by the decrease in exciton lifetimes. Decrease in the temperature led to blue-shift in the PL peak position of MoS2 layers and, consequently, the PL intensities of both tetracene and MoS2 considerably increased owing to the decrease in phonon interaction. The PL spectra of bound excitons in the hybrid region were clearly observed at low temperatures, indicating the formation of trap states. The lateral-type n-p heterojunction field-effect transistors (FETs) using the MoS2/tetracene hybrid as an active layer showed gate-tunable rectification I- V and anti-ambipolar field-effect characteristics with hysteresis effect. The charge transport characteristics across the n-p heterojunction of the hybrid region of the FET can be explained in terms of the Shockley-Read-Hall trap-intermediated tunneling and Langevin recombination mechanisms. To improve the performance of MoS2/tetracene-based FET, a dielectric hexagonal boron nitride (h-BN) thin layer was inserted between the SiO2 surface and the active MoS2 layer. We observed the decrease in the hysteresis effect and threshold voltage of the h-BN/MoS2/tetracene-based FETs due to the decrease in the number of traps at the interface. The performance of h-BN/MoS2/tetracene FET device was also enhanced after the annealing process.
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Affiliation(s)
- Hyeon Jung Park
- Department of Physics , Korea University , Seoul 02842 , Republic of Korea
| | - Cheol-Joon Park
- Department of Physics , Korea University , Seoul 02842 , Republic of Korea
| | - Jun Young Kim
- Department of Physics , Korea University , Seoul 02842 , Republic of Korea
| | - Min Su Kim
- Center for Integrated Nanostructure Physics (CINAP) , Institute of Basic Science (IBS) , Suwon 16419 , Republic of Korea
| | - Jeongyong Kim
- Center for Integrated Nanostructure Physics (CINAP) , Institute of Basic Science (IBS) , Suwon 16419 , Republic of Korea
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Jinsoo Joo
- Department of Physics , Korea University , Seoul 02842 , Republic of Korea
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42
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Parbatani A, Song ES, Yang F, Yu B. A broadband, self-biased photodiode based on antimony telluride (Sb 2Te 3) nanocrystals/silicon heterostructures. NANOSCALE 2018; 10:15003-15009. [PMID: 30052242 DOI: 10.1039/c8nr04047h] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Low bulk band gaps and conductive surface electronic states of tetradymite topological insulators (TTI) make them potential candidates for next generation ultra-broadband photodevices. Here, we demonstrate a broadband and self-biased photodiode based on a Sb2Te3-Si heterostructure. A low-cost thermal evaporation technique was employed to fabricate the photodiode. The self-biased nature of the photodiode was due to the built-in potential at the Sb2Te3-Si interface. Upon characterizing the Sb2Te3 nanocrystalline film via AFM, SEM, EDX, and XPS it was found that the film exhibited p-type behavior due to antimony vacancies or antisites. The fabricated photodiode showed an excellent rectification ratio of 3388 with n-Si confirming a robust Schottky barrier at the interface and a well-defined photocurrent upon illumination. Due to the p-type behavior of the Sb2Te3 nanocrystalline film, a rectification ratio of only 0.38 was observed with p-Si. The barrier at the interface also increases the carrier lifetimes, thereby eliminating one of the biggest drawbacks of ultrafast carrier recombination times in TTI as a photodetection material. Moreover, the photodiode exhibited excellent Ion/Ioff of three orders of magnitude under the self-biased conditions, and photocurrents ranging from 520 nm to 980 nm wavelengths were observed.
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Affiliation(s)
- Asish Parbatani
- State University of New York at Albany, Albany, New York 12203, USA.
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43
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Kumar DP, Kim EH, Park H, Chun SY, Gopannagari M, Bhavani P, Reddy DA, Song JK, Kim TK. Tuning Band Alignments and Charge-Transport Properties through MoSe 2 Bridging between MoS 2 and Cadmium Sulfide for Enhanced Hydrogen Production. ACS APPLIED MATERIALS & INTERFACES 2018; 10:26153-26161. [PMID: 30004215 DOI: 10.1021/acsami.8b02093] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Transition-metal dichalcogenide materials play a major role in the state-of-the-art innovations for energy conversion because of potential applications resulting from their unique properties. These materials additionally show inordinate potential toward the progress of hygienic power sources to deal with increasing environmental disputes at the time of skyrocketing energy demands. Herein, we report earth-abundant, few-layered, MoSe2-bridged MoS2/cadmium sulfide (CdS) nanocomposites, which reduce photogenerated electron and hole recombination by effectively separating charge carriers to achieve a high photocatalytic efficiency. Accordingly, the MoSe2-bridged MoS2/CdS system produced effective hydrogen (193 μmol·h-1) as that of water using lactic acid as a hole scavenger with the irradiation of solar light. The presence of few-layered MoSe2 bridges in MoS2/CdS successfully separates photogenerated charge carriers, thereby enhancing the shuttling of electrons on the surface to active edge sites. To the best of our knowledge, this few-layered MoSe2-bridged MoS2/CdS system exhibits the most effective concert among altogether-reported MoS2-based CdS composites. Notably, these findings with ample prospective for the development of enormously real photocatalytic systems are due to their economically viable and extraordinary efficiency.
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Affiliation(s)
- D Praveen Kumar
- Department of Chemistry and Chemical Institute for Functional Materials , Pusan National University , Busan 46241 , Republic of Korea
| | - Eun Hwa Kim
- Department of Chemistry and Chemical Institute for Functional Materials , Pusan National University , Busan 46241 , Republic of Korea
| | - Hanbit Park
- Department of Chemistry and Chemical Institute for Functional Materials , Pusan National University , Busan 46241 , Republic of Korea
| | - So Yeon Chun
- Department of Chemistry , Kyung Hee University , Seoul 02447 , Republic of Korea
| | - Madhusudana Gopannagari
- Department of Chemistry and Chemical Institute for Functional Materials , Pusan National University , Busan 46241 , Republic of Korea
| | - P Bhavani
- Department of Chemistry and Chemical Institute for Functional Materials , Pusan National University , Busan 46241 , Republic of Korea
| | - D Amaranatha Reddy
- Department of Chemistry and Chemical Institute for Functional Materials , Pusan National University , Busan 46241 , Republic of Korea
| | - Jae Kyu Song
- Department of Chemistry , Kyung Hee University , Seoul 02447 , Republic of Korea
| | - Tae Kyu Kim
- Department of Chemistry and Chemical Institute for Functional Materials , Pusan National University , Busan 46241 , Republic of Korea
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44
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Roy S, Choi W, Jeon S, Kim DH, Kim H, Yun SJ, Lee Y, Lee J, Kim YM, Kim J. Atomic Observation of Filling Vacancies in Monolayer Transition Metal Sulfides by Chemically Sourced Sulfur Atoms. NANO LETTERS 2018; 18:4523-4530. [PMID: 29921125 DOI: 10.1021/acs.nanolett.8b01714] [Citation(s) in RCA: 45] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Chemical treatment using bis(trifluoromethane) sulfonimide (TFSI) was shown to be particularly effective for increasing the photoluminescence (PL) of monolayer (1L) MoS2, suggesting a convenient method for overcoming the intrinsically low quantum yield of this material. However, the underlying atomic mechanism of the PL enhancement has remained elusive. Here, we report the microscopic origin of the defect healing observed in TFSI-treated 1L-MoS2 through a correlative combination of optical characterization and atomic-scale scanning transmission electron microscopy, which showed that most of the sulfur vacancies were directly repaired by the extrinsic sulfur atoms produced from the dissociation of TFSI, concurrently resulting in a significant PL enhancement. Density functional theory calculations confirmed that the reactive sulfur dioxide molecules that dissociated from TFSI can be reduced to sulfur and oxygen gas at the vacancy site to form strongly bound S-Mo. Our results reveal how defect-mediated nonradiative recombination can be effectively eliminated by a simple chemical treatment method, thereby advancing the practical applications of monolayer semiconductors.
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Affiliation(s)
- Shrawan Roy
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
- IBS Center for Integrated Nanostructure Physics , Institute for Basic Science , Suwon 16419 , Republic of Korea
| | - Wooseon Choi
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Sera Jeon
- Department of Physics , Pusan National University , Busan 46241 , Republic of Korea
| | - Do-Hwan Kim
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Hyun Kim
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
- IBS Center for Integrated Nanostructure Physics , Institute for Basic Science , Suwon 16419 , Republic of Korea
| | - Seok Joon Yun
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
- IBS Center for Integrated Nanostructure Physics , Institute for Basic Science , Suwon 16419 , Republic of Korea
| | - Yongjun Lee
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
- IBS Center for Integrated Nanostructure Physics , Institute for Basic Science , Suwon 16419 , Republic of Korea
| | - Jaekwang Lee
- Department of Physics , Pusan National University , Busan 46241 , Republic of Korea
| | - Young-Min Kim
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
- IBS Center for Integrated Nanostructure Physics , Institute for Basic Science , Suwon 16419 , Republic of Korea
| | - Jeongyong Kim
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
- IBS Center for Integrated Nanostructure Physics , Institute for Basic Science , Suwon 16419 , Republic of Korea
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45
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Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications. CRYSTALS 2018. [DOI: 10.3390/cryst8060252] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/24/2023]
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46
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Yan X, Zhang DW, Liu C, Bao W, Wang S, Ding S, Zheng G, Zhou P. High Performance Amplifier Element Realization via MoS 2/GaTe Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2018; 5:1700830. [PMID: 29721428 PMCID: PMC5908369 DOI: 10.1002/advs.201700830] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2017] [Revised: 12/01/2017] [Indexed: 05/27/2023]
Abstract
2D layered materials (2DLMs), together with their heterostructures, have been attracting tremendous research interest in recent years because of their unique physical and electrical properties. A variety of circuit elements have been made using mechanically exfoliated 2DLMs recently, including hard drives, detectors, sensors, and complementary metal oxide semiconductor field-effect transistors. However, 2DLM-based amplifier circuit elements are rarely studied. Here, the integration of 2DLMs with 3D bulk materials to fabricate vertical junction transistors with current amplification based on a MoS2/GaTe heterostructure is reported. Vertical junction transistors exhibit the typical current amplification characteristics of conventional bulk bipolar junction transistors while having good current transmission coefficients (α ∼ 0.95) and current gain coefficient (β ∼ 7) at room temperature. The devices provide new attractive prospects in the investigation of 2DLM-based integrated circuits based on amplifier circuits.
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Affiliation(s)
- Xiao Yan
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - David Wei Zhang
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Chunsen Liu
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Wenzhong Bao
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Shuiyuan Wang
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Shijin Ding
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Gengfeng Zheng
- Laboratory of Advanced MaterialsDepartment of ChemistryCollaborative Innovation Center of Chemistry for Energy MaterialsFudan UniversityShanghai200433China
| | - Peng Zhou
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
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Samadi M, Sarikhani N, Zirak M, Zhang H, Zhang HL, Moshfegh AZ. Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives. NANOSCALE HORIZONS 2018; 3:90-204. [PMID: 32254071 DOI: 10.1039/c7nh00137a] [Citation(s) in RCA: 116] [Impact Index Per Article: 19.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Group 6 transition metal dichalcogenides (G6-TMDs), most notably MoS2, MoSe2, MoTe2, WS2 and WSe2, constitute an important class of materials with a layered crystal structure. Various types of G6-TMD nanomaterials, such as nanosheets, nanotubes and quantum dot nano-objects and flower-like nanostructures, have been synthesized. High thermodynamic stability under ambient conditions, even in atomically thin form, made nanosheets of these inorganic semiconductors a valuable asset in the existing library of two-dimensional (2D) materials, along with the well-known semimetallic graphene and insulating hexagonal boron nitride. G6-TMDs generally possess an appropriate bandgap (1-2 eV) which is tunable by size and dimensionality and changes from indirect to direct in monolayer nanosheets, intriguing for (opto)electronic, sensing, and solar energy harvesting applications. Moreover, rich intercalation chemistry and abundance of catalytically active edge sites make them promising for fabrication of novel energy storage devices and advanced catalysts. In this review, we provide an overview on all aspects of the basic science, physicochemical properties and characterization techniques as well as all existing production methods and applications of G6-TMD nanomaterials in a comprehensive yet concise treatment. Particular emphasis is placed on establishing a linkage between the features of production methods and the specific needs of rapidly growing applications of G6-TMDs to develop a production-application selection guide. Based on this selection guide, a framework is suggested for future research on how to bridge existing knowledge gaps and improve current production methods towards technological application of G6-TMD nanomaterials.
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Affiliation(s)
- Morasae Samadi
- Department of Physics, Sharif University of Technology, Tehran 11155-9161, Iran.
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48
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Aftab S, Khan MF, Min KA, Nazir G, Afzal AM, Dastgeer G, Akhtar I, Seo Y, Hong S, Eom J. Van der Waals heterojunction diode composed of WS 2 flake placed on p-type Si substrate. NANOTECHNOLOGY 2018; 29:045201. [PMID: 29192890 DOI: 10.1088/1361-6528/aa9eb8] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
P-N junctions represent the fundamental building blocks of most semiconductors for optoelectronic functions. This work demonstrates a technique for forming a WS2/Si van der Waals junction based on mechanical exfoliation. Multilayered WS2 nanoflakes were exfoliated on the surface of bulk p-type Si substrates using a polydimethylsiloxane stamp. We found that the fabricated WS2/Si p-n junctions exhibited rectifying characteristics. We studied the effect of annealing processes on the performance of the WS2/Si van der Waals p-n junction and demonstrated that annealing improved its electrical characteristics. However, devices with vacuum annealing have an enhanced forward-bias current compared to those annealed in a gaseous environment. We also studied the top-gate-tunable rectification characteristics across the p-n junction interface in experiments as well as density functional theory calculations. Under various temperatures, Zener breakdown occurred at low reverse-bias voltages, and its breakdown voltage exhibited a negative coefficient of temperature. Another breakdown voltage was observed, which increased with temperature, suggesting a positive coefficient of temperature. Therefore, such a breakdown can be assigned to avalanche breakdown. This work demonstrates a promising application of two-dimensional materials placed directly on conventional bulk Si substrates.
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Affiliation(s)
- Sikandar Aftab
- Department of Physics & Astronomy and Graphene Research Institute, Sejong University, Seoul 05006, Republic of Korea
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Fang YX, Zhang H, Azad F, Wang SP, Ling FCC, Su SC. Band offset and an ultra-fast response UV-VIS photodetector in γ-In2Se3/p-Si heterojunction heterostructures. RSC Adv 2018; 8:29555-29561. [PMID: 35547303 PMCID: PMC9085293 DOI: 10.1039/c8ra05677c] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/03/2018] [Accepted: 08/13/2018] [Indexed: 11/21/2022] Open
Abstract
High-quality γ-In2Se3 thin films and a γ-In2Se3/p-Si heterojunction were prepared using pulse laser deposition (PLD).
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Affiliation(s)
- Y. X. Fang
- Institute of Optoelectronic Material and Technology
- South China Normal University
- Guangzhou 510631
- P. R. China
| | - H. Zhang
- Institute of Optoelectronic Material and Technology
- South China Normal University
- Guangzhou 510631
- P. R. China
| | - F. Azad
- School of Natural Sciences (SNS)
- National University of Sciences and Technology (NUST)
- H-12 Islamabad
- Pakistan
| | - S. P. Wang
- Institute of Applied Physics and Materials Engineering
- University of Macau
- China
| | - F. C. C. Ling
- Department of Physics
- The University of Hong Kong
- Hong Kong
- People's Republic of China
| | - S. C. Su
- Institute of Optoelectronic Material and Technology
- South China Normal University
- Guangzhou 510631
- P. R. China
- Department of Physics
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50
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Wang F, Wang Z, Yin L, Cheng R, Wang J, Wen Y, Shifa TA, Wang F, Zhang Y, Zhan X, He J. 2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection. Chem Soc Rev 2018; 47:6296-6341. [DOI: 10.1039/c8cs00255j] [Citation(s) in RCA: 156] [Impact Index Per Article: 26.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Abstract
Two-dimensional materials beyond graphene and TMDs can be promising candidates for wide-spectra photodetection.
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