All Inkjet-Printed Metal-Oxide Thin-Film Transistor Array with Good Stability and Uniformity Using Surface-Energy Patterns

Enhanced Carrier Dynamics and Excitation of Optically Stimulated Artificial Synapse Using van der Waals Passivation Layers

Advances in the semiconductor industry have been limited owing to the constraints imposed by silicon-based CMOS technology; hence, innovative device design approaches are necessary. This study focuses on "more than Moore" approaches, specifically in neuromorphic computing. Although MoS2 devices have attracted attention as neuromorphic computing candidates, their performances have been limited due to environment-induced perturbations to carrier dynamics and the formation of defect states. This study explores the integration of hydrocarbon (HC) layers onto active MoS2 channels to enhance neuromorphic computing characteristics. HC layers were employed in the proposed MoS2 field-effect transistor to facilitate stable optoelectrical control over the MoS2 channel under high-power stimulation. The improved electrical performance, stability, and synaptic behaviors of the HC-capped MoS2 devices compared to uncapped counterparts were experimentally demonstrated. The combination of optical and electrical tuning allowed for in-sensor computing applications that mimic human sensory behaviors. The impact of HC passivation on device performance was evaluated, and its potential for applications in neuromorphic computing with high stability was demonstrated across wide-ranging environmental conditions. The unique capabilities of HC-capped MoS2 devices were demonstrated by examining the spike duration-dependent plasticity and spiking timing-dependent plasticity. Thus, the proposed approach offers a promising avenue for advancing neuromorphic computing technologies.

Solution Process-Based Thickness Engineering of InZnO Semiconductors for Oxide Thin-Film Transistors with High Performance and Stability

To fabricate oxide thin-film transistors (TFTs) with high performance and excellent stability, preparing high-quality semiconductor films in the channel bulk region and minimizing the defect states in the gate dielectric/channel interfaces and back-channel regions is necessary. However, even if an oxide transistor is composed of the same semiconductor film, gate dielectric/channel interface, and back channel, its electrical performance and operational stability are significantly affected by the thickness of the oxide semiconductor. In this study, solution process-based nanometer-scale thickness engineering of InZnO semiconductors was easily performed via repeated solution coating and annealing. The thickness-controlled InZnO films were then applied as channel regions, which were fabricated with almost identical film quality, gate dielectric/channel interface, and back-channel conditions. However, excellent operational stability and electrical performance suitable for oxide TFT backplane was only achieved using an 8 nm thick InZnO film. In contrast, the ultrathin and thicker films exhibited electrical performances that were either very resistive (high positive VTh and low on-current) or excessively conductive (high negative VTh and high off-current). This investigation confirmed that the quality of semiconductor materials, solution process design, and structural parameters, including the dimensions of the channel layer, must be carefully designed to realize high-performance and high-stability oxide TFTs.

Composition Engineering of Indium Zinc Oxide Semiconductors for Damage-Free Back-Channel Wet Etching Metallization of Oxide Thin-Film Transistors

In contrast to lift-off and shadow mask processes, the back-channel wet etching (BCWE) process is suitable for industrial-scale metallization processes for the large-area and mass production of oxide thin-film transistors (TFTs). However, chemical attacks caused by the corrosive metal etchants used in the BCWE process cause unintended performance degradation of oxide semiconductors, making it difficult to implement oxide TFT circuits through industrial-scale metallization processes. Herein, we propose composition engineering of oxide semiconductors to enhance the chemical durability and electrical stability of oxide semiconductors. The chemical durability of InZnO against Al etchants can be improved by increasing the content of indium oxide, which has a higher chemical resistance than zinc oxide. As a result, A damage-free BCWE-based metallization process was successfully demonstrated for oxide TFTs using In-rich InZnO semiconductors. Furthermore, In-rich InZnO TFTs with wet-etched Al electrodes exhibited electrical performance comparable to that of lift-off Al electrodes, without chemical attack issues.

Manipulator Control System Based on Flexible Sensor Technology

The research on the remote control of manipulators based on flexible sensor technology is gradually extensive. In order to achieve stable, accurate, and efficient control of the manipulator, it is necessary to reasonably design the structure of the sensor with excellent tensile strength and flexibility. The acquisition of manual information by high-performance sensors is the basis of manipulator control. This paper starts with the manufacturing of materials of the flexible sensor for the manipulator, introduces the substrate, sensor, and flexible electrode materials, respectively, and summarizes the performance of different flexible sensors. From the perspective of manufacturing, it introduces their basic principles and compares their advantages and disadvantages. Then, according to the different ways of wearing, the two control methods of data glove control and surface EMG control are respectively introduced, the principle, control process, and detection accuracy are summarized, and the problems of material microstructure, reducing the cost, optimizing the circuit design and so on are emphasized in this field. Finally, the commercial application in this field is explained and the future research direction is proposed from two aspects: how to ensure real-time control and better receive the feedback signal from the manipulator.

As-Grown Crystalline InGaZnO by Spray Pyrolysis on a Flexible Substrate for a Thin-Film Transistor with Excellent Stability

The development of low-cost, high-mobility oxide thin-film transistors (TFTs) with excellent stability is of increasing interest. The coplanar oxide TFTs can be used for high-speed, large-area, and high-resolution displays. Here, we report highly oriented, as-grown crystalline InGaZnO (c-IGZO) with very low oxygen vacancy defects using spray pyrolysis at the substrate temperature of 425 °C. The c-IGZO exhibits a highly oriented, c-axis aligned crystal perpendicular to the substrate with a high mass density of 6.73 g cm-3 without any disordered incubation layer. Its resistivity can be decreased to 0.42 mΩ cm by NF3 plasma doping, which is essential to achieving high-performance coplanar TFT. We have demonstrated the application of this material to high-performance flexible TFTs. The self-aligned, coplanar c-IGZO TFTs on the polyimide substrate exhibit an average field-effect mobility of 39.60 cm2 V-1 s-1, threshold voltage of -1.00 V, subthreshold swing of 0.21 V dec-1, and on/off current ratio over 108. The ring oscillator and gate driver made of the c-IGZO TFTs exhibit a propagation delay of 8.77 ns/stage and rising/falling times of 648/564 ns, respectively. Therefore, the as-grown c-IGZO by spray pyrolysis has the potential to be utilized as a new oxide semiconductor for the production of low-cost, flexible TFT electronics.

The Mechanism of the Photostability Enhancement of Thin-Film Transistors Based on Solution-Processed Oxide Semiconductors Doped with Tetravalent Lanthanides

The applications of thin-film transistors (TFTs) based on oxide semiconductors are limited due to instability under negative bias illumination stress (NBIS). Here, we report TFTs based on solution-processed In₂O₃ semiconductors doped with Pr⁴⁺ or Tb⁴⁺, which can effectively improve the NBIS stability. The differences between the Pr⁴⁺-doped In₂O₃ (Pr:In₂O₃) and Tb⁴⁺-doped In₂O₃ (Tb:In₂O₃) are investigated in detail. The undoped In₂O₃ TFTs with different annealing temperatures exhibit poor NBIS stability with serious turn-on voltage shift (ΔV_on). After doping with Pr⁴⁺/Tb⁴⁺, the TFTs show greatly improved NBIS stability. As the annealing temperature increases, the Pr:In₂O₃ TFTs have poorer NBIS stability (ΔV_on are -3.2, -4.8, and -4.8 V for annealing temperature of 300, 350, and 400 °C, respectively), while the Tb:In₂O₃ TFTs have better NBIS stability (ΔV_on are -3.6, -3.6, and -1.2 V for annealing temperature of 300, 350, and 400 ℃, respectively). Further studies reveal that the improvement of the NBIS stability of the Pr⁴⁺/Tb⁴⁺:In₂O₃ TFTs is attributed to the absorption of the illuminated light by the Pr/Tb4fⁿ-O2p⁶ to Pr/Tb 4fⁿ⁺¹-O2p⁵ charge transfer (CT) transition and downconversion of the light to nonradiative transition with a relatively short relaxation time compared to the ionization process of the oxygen vacancies. The higher NBIS stability of Tb:In₂O₃ TFTs compared to Pr:In₂O₃ TFTs is ascribed to the smaller ion radius of Tb⁴⁺ and the lower energy level of Tb 4f⁷ with a isotropic half-full configuration compared to that of Pr 4f¹, which would make it easier for the Tb⁴⁺ to absorb the visible light than the Pr⁴⁺.

Nano-Scale Ga2O3 Interface Engineering for High-Performance of ZnO-Based Thin-Film Transistors

Thin-film transistor (TFT) is a essential device for future electronics driving the next level of digital transformation. The development of metal-oxide-semiconductor (MOS) TFTs is considered one of the most advantageous devices for next-generation, large-area flexible electronics. This study demonstrates the systematic study of the amorphous gallium oxide (a-Ga₂O₃) and its application to nanocrystalline ZnO TFTs. The TFT with a-Ga₂O₃/c-ZnO-stack channel exhibits a field-effect mobility of ∼41 cm² V^-1 s^-1 and excellent stability under positive-bias-temperature stress. The a-Ga₂O₃/c-ZnO-stack TFT on polyimide (PI) substrate exhibits a negligible threshold voltage shift upon 100k bending cycles with a radius of 3 mm and is very stable under environmental test. The smooth morphology with tiny grains of ∼12 nm diameter with fewer grain boundary states improves the charge transport in Ga₂O₃/ZnO-stack TFT. The existence of amorphous a-Ga₂O₃ in between very thin ZnO layers helps to enhance the heterointerfaces and reduce the defect density in Ga₂O₃/ZnO interface. Therefore, integrating a-Ga₂O₃ in the ZnO channel in stacked TFT can increase mobility and enhance stability for next-generation flexible TFT electronics.

Probing the Efficacy of Large-Scale Nonporous IGZO for Visible-to-NIR Detection Capability: An Approach toward High-Performance Image Sensor Circuitry

The technological ability to detect a wide spectrum range of illuminated visible-to-NIR is substantially improved for an amorphous metal oxide semiconductor, indium gallium zinc oxide (IGZO), without employing an additional photoabsorber. The fundamentally tuned morphology via structural engineering results in the creation of nanopores throughout the entire thickness of ∼30 nm. See-through nanopores have edge functionalization with vacancies, which leads to a large density of substates near the conduction band minima and valence band maxima. The presence of nanoring edges with a high concentration of vacancies is investigated using chemical composition analysis. The process of creating a nonporous morphology is sophisticated and is demonstrated using a wafer-scale phototransistor array. The performance of the phototransistors is assessed in terms of photosensitivity (S) and photoresponsivity (R); both are of high magnitudes (S = 8.6 × 10⁴ at λ_ex = 638 nm and P_inc = 512 mW cm^2-; R = 120 A W^1- at P_inc = 2 mW cm^2- for the same λ_ex). Additionally, the 7 × 5 array of 35 phototransistors is effective in sensing and reproducing the input image by responding to selectively illuminated pixels.

Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect

Metal oxide thin-films transistors (TFTs) produced from solution-based printing techniques can lead to large-area electronics with low cost. However, the performance of current printed devices is inferior to those from vacuum-based methods due to poor film uniformity induced by the "coffee-ring" effect. Here, we report a novel approach to print high-performance indium tin oxide (ITO)-based TFTs and logic inverters by taking advantage of such notorious effect. ITO has high electrical conductivity and is generally used as an electrode material. However, by reducing the film thickness down to nanometers scale, the carrier concentration of ITO can be effectively reduced to enable new applications as active channels in transistors. The ultrathin (~10-nm-thick) ITO film in the center of the coffee-ring worked as semiconducting channels, while the thick ITO ridges (>18-nm-thick) served as the contact electrodes. The fully inkjet-printed ITO TFTs exhibited a high saturation mobility of 34.9 cm² V^-1 s^-1 and a low subthreshold swing of 105 mV dec^-1. In addition, the devices exhibited excellent electrical stability under positive bias illumination stress (PBIS, ΔV_th = 0.31 V) and negative bias illuminaiton stress (NBIS, ΔV_th = -0.29 V) after 10,000 s voltage bias tests. More remarkably, fully printed n-type metal-oxide-semiconductor (NMOS) inverter based on ITO TFTs exhibited an extremely high gain of 181 at a low-supply voltage of 3 V, promising for advanced electronics applications.

Bioinspired wettable-nonwettable micropatterns for emerging applications

Superhydrophilic and superhydrophobic surfaces are prevalent in nature and have received tremendous attention due to their importance in both fundamental research and practical applications. With the high interdisciplinary research and great development of microfabrication techniques, artificial wettable-nonwettable micropatterns inspired by the water-collection behavior of desert beetles have been successfully fabricated. A combination of the two extreme states of superhydrophilicity and superhydrophobicity on the same surface precisely, wettable-nonwettable micropatterns possess unique functionalities, such as controllable superwetting, anisotropic wetting, oriented adhesion, and other properties. In this review, we briefly describe the methods for fabricating wettable-nonwettable patterns, including self-assembly, electrodeposition, inkjet printing, and photolithography. We also highlight some of the emerging applications such as water collection, controllable bioadhesion, cell arrays, microreactors, printing techniques, and biosensors combined with various detection methods. Finally, the current challenges and prospects of this renascent and rapidly developing field are proposed and discussed.

Inkjet-Printed Ultrathin MoS2-Based Electrodes for Flexible In-Plane Microsupercapacitors

Flexible and wearable energy storage microdevice systems with high performance and safety are promising candidates for the electronics of on-chip integration. Herein, we demonstrate inkjet-printed ultrathin electrodes based on molybdenum disulfide (MoS₂) nanosheets for flexible and all-solid-state in-plane microsupercapacitors (MSCs) with high capacitance. The MoS₂ nanosheets were uniformly dispersed in the low-boiling point and nontoxic solvent isopropanol to form highly concentrated inks suitable for inkjet printing. The MSCs were assembled by printing the highly concentrated MoS₂ inks on a polyimide substrate with appropriate surface tension using a simple and low-cost desktop inkjet printer. Because of the two-dimensional structure of MoS₂ nanosheets, the as-assembled planar MSCs have high loadings of active materials per unit area, resulting in more flexibility and thinness than the capacitors with a traditional sandwich structure. These planar MSCs can not only possess any collapsible shape through the computer design but also exhibit excellent electrochemical performance (with a maximum energy density of 0.215 mW h cm^-3 and a high-power energy density of 0.079 W cm^-3), outstanding mechanical flexibility (almost no degradation of capacitance at different bending radii), good cycle stability (85.6% capacitance retention even after 10,000 charge-discharge cycles), and easy scale-up. Moreover, a blue light-emitting diode can be powered using five MSCs connected in series. The in-plane and low-cost MSCs with high energy densities have great application potential for integrated energy storage systems including wearable planar solar cells and other electronics.

Lanthanum Doping in Zinc Oxide for Highly Reliable Thin-Film Transistors on Flexible Substrates by Spray Pyrolysis

Solution-processed metal-oxide thin-film transistors (TFTs) are considered as one of the most favorable devices for next-generation, large-area flexible electronics. In this paper, we demonstrate the excellent material properties of lanthanum-zinc oxide (LaZnO) thin films deposited by spray pyrolysis and their application to TFTs. The threshold voltage of the LaZnO TFTs shifts toward positive gate voltage, and the mobility decreases with increasing lanthanum ratio in ZnO from 0 to 20%. The purification of the LaZnO precursor (P-LaZnO) further improves the device performance. The P-LaZnO TFT exhibits a field-effect mobility of 22.43 cm² V^-1 s^-1, zero hysteresis voltage, and negligible threshold voltage V_TH shift under positive bias temperature stress. The enhancement in the electrical properties is due to a decrease in grain size, smooth surface roughness, and reduction in the trap density in the LaZnO film. X-ray photoelectron spectroscopy (XPS) results confirm the presence of La in the TFT channel and at/near the interface of the LaZnO and ZrO_x gate insulator, leading to fewer interfacial traps. The flexible P-LaZnO TFT fabricated on the polyimide substrate exhibits a mobility of 17.64 cm² V^-1 s^-1 and a negligible V_TH shift under bias stress. Also, the inverter made of LZO TFTs is working well with a voltage gain of 17.74 (V/V) at 4 V. Therefore, the LaZnO TFT is a promising device for next-generation flexible displays.

Functional Metal Oxide Ink Systems for Drop-on-Demand Printed Thin-Film Transistors

Drop-on-demand printing is a noncontact direct patterning and rapid manufacturing printing technology which shows considerable potential in future display manufacturing. Metal oxides are an important kind of functional material in thin-film transistors, which are the core component of active matrix display technology, and thus printing a high-quality metal oxide functional layer is of great importance. In this feature article, we focused on the current progress in one of the foundations of drop-on-demand printing technology-the ink system. We explained the basic principles of a metal oxide ink system for printed electronics and summarized the applications of several kinds of ink systems in thin film transistor printing. Meanwhile, we also summed up problems that printed thin film transistors are facing as well as the corresponding solutions from the aspect of ink systems.

Inkjet-Printed Top-Gate Thin-Film Transistors Based on InGaSnO Semiconductor Layer with Improved Etching Resistance

Inkjet-printed top-gate metal oxide (MO) thin-film transistors (TFTs) with InGaSnO semiconductor layer and carbon-free aqueous gate dielectric ink are demonstrated. It is found that the InGaO semiconductor layer without Sn doping is seriously damaged after printing aqueous gate dielectric ink onto it. By doping Sn into InGaO, the acid resistance is enhanced. As a result, the printed InGaSnO semiconductor layer is almost not affected during printing the following gate dielectric layer. The TFTs based on the InGaSnO semiconductor layer exhibit higher mobility, less hysteresis, and better stability compared to those based on InGaO semiconductor layer. To the best of our knowledge, it is for the first time to investigate the interface chemical corrosivity of inkjet-printed MO-TFTs. It paves a way to overcome the solvent etching problems for the printed TFTs.

Ultraviolet Photodetecting and Plasmon-to-Electric Conversion of Controlled Inkjet-Printing Thin-Film Transistors

Direct ink-jet printing of a zinc-oxide-based thin-film transistor (ZnO-based TFT) with a three-dimensional (3-D) channel structure was demonstrated for ultraviolet light (UV) and visible light photodetection. Here, we demonstrated the channel structures by which temperature-induced Marangoni flow can be used to narrow the channel width from 318.9 ± 44.1 μm to 180.1 ± 13.9 μm via a temperature gradient. Furthermore, a simple and efficient oxygen plasma treatment was used to enhance the electrical characteristics of switching I_ON/I_OFF ratio of approximately 10⁵. Therefore, the stable and excellent gate bias-controlled photo-transistors were fabricated and characterized in detail for ultraviolet (UV) and visible light sensing. The photodetector exhibited a superior photoresponse with a significant increase of more than 2 orders of magnitude larger drain current generated upon UV illumination. The results could be useful for the development of UV photodetectors by the direct-patterning ink-jet printing technique. Additionally, we also have successfully demonstrated that a metal-semiconductor junction structure that enables plasmon energy detection by using the plasmonic effects is an efficient conversion of plasmon energy to an electrical signal. The device showed a significant variations negative shift of threshold voltage under different light power density with exposure of visible light. With the ZnO-based TFTs, only ultraviolet light detection extends to the visible light wavelength.

Multifunctional, Room-Temperature Processable, Heterogeneous Organic Passivation Layer for Oxide Semiconductor Thin-Film Transistors

In recent decades, oxide thin-film transistors (TFTs) have attracted a great deal of attention as a promising technology in terms of next-generation electronics due to their outstanding electrical performance. However, achieving robust electrical characteristics under various environments is a crucial challenge for successful realization of oxide-based electronic applications. To resolve the limitation, we propose a highly flexible and reliable heterogeneous organic passivation layer composed of stacked parylene-C and diketopyrrolopyrrole-polymer films for improving stability of oxide TFTs under various environments and mechanical stress. The presented multifunctional heterogeneous organic (MHO) passivation leads to high-performance oxide TFTs by: (1) improving their electrical characteristics, (2) protecting them from external reactive molecules, and (3) blocking light exposure to the oxide layer. As a result, oxide TFTs with MHO passivation exhibit outstanding stability in ambient air as well as under light illumination: the threshold voltage shift of the device is almost 0 V under severe negative bias illumination stress condition (white light of 5700 lx, gate voltage of -20 V, and drain voltage of 10.1 V for 20 000 s). Furthermore, since the MHO passivation layer exhibits high mechanical stability at a bending radius of ≤5 mm and can be deposited at room temperature, this technique is expected to be useful in the fabrication of flexible/wearable devices.

Direct Inkjet Printing of Aqueous Inks to Flexible All-Solid-State Graphene Hybrid Micro-Supercapacitors

In this article, the inkjet printing technique is demonstrated for the stacking of reduced graphene oxide (RGO) and molybdenum trioxide (MoO₃) nanosheets for flexible all-solid-state micro-supercapacitors. The ammonium molybdate tetrahydrate/graphene oxide ((NH₄)₆Mo₇O₂₄·4H₂O/GO) aqueous inks are facilely printed on polymide (PI) film and transformed to RGO/MoO₃ hybrids via thermal treatments at air atmosphere. The compound inks are water-based, inkjet-printable, and nontoxic for inkjet printing to form two-dimensional crystal materials. The physical properties of aqueous inks are optimized within a printable range characterized by the Ohnesorge number of 1 < Z < 14. The inkjet-printed symmetric micro-supercapacitors (MSCs) with poly(vinyl alcohol) (PVA)-H₂SO₄ gel electrolyte possess a wide voltage window of 0-0.8 V, excellent flexibility, a high volumetric specific capacitance of 22.5 F cm^-3 at 0.044 A cm^-3, as well as good cyclic stability due to the synergistic effect of RGO and MoO₃. Furthermore, the inkjet-printed composite MSCs delivered a maximum energy density of 2 mWh cm^-3 and a power density of 0.018 W cm^-3, and the capacity retention rate of inkjet-printed MSCs is still retained 82% even after 10 000 charge-discharge cycles, indicating good electrochemical properties. Above all, the as-designed inkjet printing technique shows potential for flexible and wearable energy storage electronics.

Inkjet-Printed Oxide Thin-Film Transistors Based on Nanopore-Free Aqueous-Processed Dielectric for Active-Matrix Quantum-Dot Light-Emitting Diode Displays

Inkjet-printed thin-film transistors (TFTs) for active-matrix light-emitting diode display are drawing much attention for the advantages of low material waste and simple fabrication processes without vacuum deposition and photolithography steps. Herein, for the first time, solution-processed quantum-dot light-emitting diode (QLED) array displays driven with the inkjet-printed oxide TFT backplane were realized and demonstrated using a general "solvent printing" method. To suppress nanopore formation in the thick oxide films, carbon-free aqueous inks were employed for gate dielectrics. No nanopore was found in the whole 120 nm-thick gate dielectrics. However, compared to the organic inks, the aqueous inks have very low viscosity, resulting in uncontrollable ink spreading especially in transline printing. The ink easily shrinks on the low-surface-energy area and spreads on the high-surface-energy area, leading to serious uniformity problems (the upper lines even break at the top of underlying lines). To solve the problem, a "solvent printing" method was employed to form coffee-line surface-energy patterns, which were uniform without shape distortion. The surface-energy patterns can restrain the ink spreading and tune the morphology of the printed films. As a result, multilayer TFT arrays with ideal shapes were achieved. The mobilities of the printed top-gate TFTs in the backplane array were 3.13 ± 0.87 cm² V^-1 s^-1 for switching TFTs and 2.22 ± 0.38 cm² V^-1 s^-1 for driving TFTs. Finally, an active-matrix red QLED character display based on the printed oxide TFT backplane and solution-processed QLEDs was demonstrated. The "solvent printing" method opens a general route for inkjet-printed multilayer electronic devices.

Solution-processed metal-oxide thin-film transistors: a review of recent developments

Driven by the rapid development of novel active-matrix displays, thin-film transistors (TFTs) based on metal-oxide (MO) semiconductors have drawn great attention during recent years. N-type MO TFTs manufactured through vacuum-based processes have the advantages of higher mobility compared to the amorphous silicon TFTs, better uniformity and lower processing temperature compared to the polysilicon TFTs, and visible light transparency which is suitable for transparent electronic devices, etc. However, the fabrication cost is high owing to the expensive and complicated vacuum-based systems. In contrast, solution process has the advantages of low cost, high throughput, and easy chemical composition control. In the first part of this review, a brief introduction of solution-processed MO TFTs is given, and the main issues and challenges encountered in this field are discussed. The recent advances in channel layer engineering to obtain the state-of-the-art solution-processed MO TFTs are reviewed and summarized. Afterward, a detailed discussion of the direct patterning methods is presented, including the direct photopatterning and printing techniques. Next, the effect of gate dielectric materials and their interfaces on the performance of the resulting TFTs are surveyed. The last topic is the various applications of solution-processed MO TFTs, from novel displays to sensing, memory devices, etc. Finally, conclusions are drawn and future expectations for solution-processed MO TFTs and their applications are described.

Silver Mesh Electrodes via Electroless Deposition-Coupled Inkjet-Printing Mask Technology for Flexible Polymer Solar Cells

The application of metal grids as flexible transparent electrodes (FTEs) in optoelectronic devices is significantly influenced by poor adhesion and thickness difference between the metal and the substrate, resistance distribution uniformity, and a high annealing temperature. Direct inkjet printing of the metal mesh can overcome junction resistance while maintaining high conductivity, but the metal mesh thickness is still unsatisfactory. In addition, inkjet printing of mechanically durable metal FTEs directly on flexible substrates is challenging because of the high-temperature sintering treatment. Electroless deposition is a well-established method for low-cost and large-scale deposition of metal films. Here, ultrathin and ultraflexible Ag mesh@polydopamine (PDA)/poly(ethylene terephthalate) (PET) FTEs were fabricated by integrating inkjet-printed polymer matrices on a PDA-modified flexible PET substrate to form consecutive patterns as a mask and performing subsequent electroless deposition of the Ag mesh. The FTEs exhibit an excellent sheet resistance (R_s) of 9 Ω/sq with 89.9% transmittance. The resultant polymer solar cells show a superior power conversion efficiency (PCE) of 10.24% with 1 cm² area and feature excellent flexural endurance (81% of initial PCE after 1500 bending cycles) and operational reliability (83% of initial PCE after 30 days). This ecofriendly and large-area fabrication technique has potential for future commercial applications of wearable electronics.

Printed flexible and transparent electronics: enhancing low-temperature processed metal oxides with 0D and 1D nanomaterials

Metal oxides have broad multifunctionality and important applications to energy, sensing, and information display. Printed electronics have recently adopted metal oxides to push the limits of performance and stability for flexible thin film systems. However, a grand challenge in this field is to achieve these properties while balancing the thermal budget, which critically determines the applicability, flexibility, and cost of these systems. This paper presents a focused review of printed metal oxide electronics, highlighting our recent work developing high-performance, printed transistors processed at low temperatures via aqueous precursor chemistries, nanomaterial hybrid inks, and ultraviolet annealing. These results reveal the potential for printing uniquely high-performance active devices (electronic mobility >10 cm² V^-1 s^-1) but also illustrates the utility of nanocomposites that integrate nanomaterials within a metal oxide matrix for improving device performance.

Recent Progress in Inkjet-Printed Thin-Film Transistors

Drop-on-demand inkjet printing is one of the most attractive techniques from a manufacturing perspective due to the possibility of fabrication from a digital layout at ambient conditions, thus leading to great opportunities for the realization of low-cost and flexible thin-film devices. Over the past decades, a variety of inkjet-printed applications including thin-film transistors (TFTs), radio-frequency identification devices, sensors, and displays have been explored. In particular, many research groups have made great efforts to realize high-performance TFTs, for application as potential driving components of ubiquitous wearable electronics. Although there are still challenges to enable the commercialization of printed TFTs beyond laboratory-scale applications, the field of printed TFTs still attracts significant attention, with remarkable developments in soluble materials and printing methodology. Here, recent progress in printing-based TFTs is presented from materials to applications. Significant efforts to improve the electrical performance and device-yield of printed TFTs to match those of counterparts fabricated using conventional deposition or photolithography methods are highlighted. Moreover, emerging low-dimension printable semiconductors, including carbon nanotubes and transition metal dichalcogenides as well as mature semiconductors, and new-concept printed switching devices, are also discussed.

High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al₂O₃ Gate Dielectric

In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al₂O₃ (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO₂ gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm²/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 10¹¹/cm²·eV, respectively.

Stability evaluation of ZnO nanosheet based source-gated transistors

Semiconducting nanostructures are one of the potential candidates to accomplish low-temperature and solution-based device assembly processes for the fabrication of transistors that offer practical solutions toward realizing low-cost flexible electronics. Meanwhile, it has been shown that by introducing a contact barrier, in a specific transistor configuration, stable device operation can be achieved at much reduced power consumption. In this work, we investigate both one-dimensional ZnO nanowires (NWs) and two-dimensional nanosheets (NSs) for high performance and stable nano-transistors on conventional Si/SiO₂ substrates. We have fabricated two variant of transistors based on nanoscale single-crystalline oxide materials: field-effect transistors (FETs) and source-gated transistors (SGTs). Stability tests are performed on both devices with respect to gate bias stress at three different regimes of transistor operation, namely off-state, on-state and sub-threshold state. While in the off-state, FETs shows comparatively better stability than SGTs devices, in both sub-threshold and on-state regimes of transistors, SGTs clearly exhibits better robustness against bias stress variability. The present investigation experimentally demonstrates the potential advantages of SGTs over FETs as driver transistor for AMOLEDs display circuits which require very high stability in OLED driving current.

A Simple, Low Cost Ink System for Drop-on-Demand Printing High Performance Metal Oxide Dielectric Film at Low Temperature

We have successfully developed an ink system containing inexpensive raw materials through a simple process and have printed ZrO _x dielectric film at a relatively low annealing temperature of 250 °C. The ZrO _x dielectric film afforded a leakage current density of 5.4 × 10^-6 A/cm² at 1 MV/cm and a dielectric constant of 10 and shows a promising future for flexible electronics. The ink system shows a temperature-induced gelation behavior, and a gel network is formed when the temperature rises. A high concentration of oxide precursors is obtained near the network area through the absorption function of polymer groups, and thus oxide structure can be formed at a relatively low temperature due to the shorter diffusion path of precursor polymerization. The microstructure of the printed ZrO _x film was investigated by high resolution transmission electron microscopy (HRTEM), Fourier-transform infrared spectroscopy (FT-IR), and X-ray photoelectron spectroscopy (XPS), and the effect of annealing temperature on film structure was studied.

Three-dimensional monolithic integration in flexible printed organic transistors

Direct printing of thin-film transistors has enormous potential for ubiquitous and lightweight wearable electronic applications. However, advances in printed integrated circuits remain very rare. Here we present a three-dimensional (3D) integration approach to achieve technology scaling in printed transistor density, analogous to Moore's law driven by lithography, as well as enhancing device performance. To provide a proof of principle for the approach, we demonstrate the scalable 3D integration of dual-gate organic transistors on plastic foil by printing with high yield, uniformity, and year-long stability. In addition, the 3D stacking of three complementary transistors enables us to propose a programmable 3D logic array as a new route to design printed flexible digital circuitry essential for the emerging applications. The 3D monolithic integration strategy demonstrated here is applicable to other emerging printable materials, such as carbon nanotubes, oxide semiconductors and 2D semiconducting materials.

Solution-Based Micro- and Nanoscale Metal Oxide Structures Formed by Direct Patterning for Electro-Optical Applications

Due to their transparency and tunable electrical, optical, and magnetic properties, metal oxide thin films and structures have many applications in electro-optical devices. In recent years, solution processing combined with direct-patterning techniques such as micro-/nanomolding, inkjet printing, e-jet printing, e-beam writing, and photopatterning has drawn much attention because of the inexpensive and simple fabrication process that avoids using capital-intensive vacuum deposition systems and chemical etching. Furthermore, practical applications of solution direct-patterning techniques with metal oxide structures are demonstrated in thin-film transistors and biochemical sensors on a wide range of substrates. Since direct-patterning techniques enable low-cost fabrication of nanoscale metal oxide structures, these methods are expected to accelerate the development of nanoscale devices and systems based on metal oxide components in important application fields such as flexible electronics, the Internet of Things (IoT), and human health monitoring. Here, a review of the fabrication procedures, advantages, limitations, and applications of the main direct-patterning methods for making metal oxide structures is presented. The goal is to highlight the examples with the most promising perspective from the recent literature.

High-Performance All-Solution-Processed Flexible Photodetector Arrays Based on Ultrashort Channel Amorphous Oxide Semiconductor Transistors

Amorphous oxide semiconductor (AOS) field-effect phototransistors (FEPTs) are promising candidates for emerging photodetectors. Unfortunately, traditional lateral AOS FEPTs suffer from low photosensitivity, slow response time and inadequate mechanical flexibility, which restrict their widespread commercial application. In this work, novel AOS-based vertical field-effect phototransistor (VFEPT) arrays are presented, where the semiconducting layer and source and drain electrodes are deposited by inkjet printing. Benefitted from the unique vertical structure and ultrashort channel length, the exciton dissociation, carrier transfer, and collection efficiency were dramatically enhanced, resulting in excellent photoelectric performance in VFEPT devices, which was better than that of the traditional lateral AOS phototransistors. Moreover, flexible AOS VFEPT arrays were investigated for the first time on polyimide substrates. Due to the unique vertical architecture, the carrier transport was negligibly affected by the strain-induced in-plane cracks of the semiconductor channel layer during the mechanical bending process, which overcame the maximum bending limit of traditional lateral AOS thin-film transistors to ensure a transistor technique that gives notable mechanical robustness against repeated mechanical bending. Hence, this work provided a new pathway in emerging applications for AOS photodetectors with sensitivity, transparency, and flexibility.

Fully Printed Flexible Dual-Gate Carbon Nanotube Thin-Film Transistors with Tunable Ambipolar Characteristics for Complementary Logic Circuits

Semiconducting single-wall carbon nanotubes (sSWCNTs) have been widely used as the channel material for high-performance printed flexible thin-film transistors (TFTs). Due to the absorption of moisture and oxygen in air, the printed sSWCNT TFTs generally exhibit p-type characteristics only. In this paper, we report fully printed dual-gate sSWCNT TFTs that exhibit almost symmetric ambipolar characteristics. With the applied control gate voltage varying from -60 to +60 V, a threshold voltage tuning range of 27 V is achieved, allowing the device to be effectively tuned into either predominantly p-type or predominantly n-type. The tunable ambipolar characteristics are found to be very stable over a long period of time (4 months). By integrating two printed dual-gate TFTs biased with different control gate voltages, a complementary metal oxide semiconductor inverter with close to rail-to-rail output voltage swing is demonstrated. The use of a dual-gate structure for achieving n-type printed carbon nanotube TFTs is much more controllable and repeatable compared to other methods such as chemical doping. Our work shows the feasibility of implementing more sophisticated complementary logic circuits using printed flexible carbon nanotube transistors.

Scalable, High-Performance Printed InO x Transistors Enabled by Ultraviolet-Annealed Printed High- k AlO x Gate Dielectrics

Inorganic transparent metal oxides represent one of the highest performing material systems for thin-film flexible electronics. Integrating these materials with low-temperature processing and printing technologies could fuel the next generation of ubiquitous transparent devices. In this work, we investigate the integration of UV-annealing with inkjet printing, demonstrating how UV-annealing of high- k AlO _x dielectrics facilitates the fabrication of high-performance InO _x transistors at low processing temperatures and improves bias-stress stability of devices with all-printed dielectrics, semiconductors, and source/drain electrodes. First, the influence of UV-annealing on printed metal-insulator-metal capacitors is explored, illustrating the effects of UV-annealing on the electrical, chemical, and morphological properties of the printed gate dielectrics. Utilizing these dielectrics, printed InO _x transistors were fabricated which achieved exceptional performance at low process temperatures (<250 °C), with linear mobility μ_lin ≈ 12 ± 1.6 cm²/V s, subthreshold slope <150 mV/dec, I_on/ I_off > 10⁷, and minimal hysteresis (<50 mV). Importantly, detailed characterization of these UV-annealed printed devices reveals enhanced operational stability, with reduced threshold voltage ( V_t) shifts and more stable on-current. This work highlights a unique, synergistic interaction between low-temperature-processed high- k dielectrics and printed metal oxide semiconductors.

Printed Thin-Film Transistors: Research from China

Thin-film transistors (TFTs) have experienced tremendous development during the past decades and show great promising applications in flat displays, sensors, radio frequency identification tags, logic circuit, and so on. The printed TFTs are the key components for rapid development and commercialization of printed electronics. The researchers in China play important roles to accelerate the development and commercialization of printed TFTs. In this review, we comprehensively summarize the research progress of printed TFTs on rigid and flexible substrates from China. The review will focus on printing techniques of TFTs, printed TFT components including semiconductors, dielectrics and electrodes, as well as fully printed TFTs and printed flexible TFTs. Furthermore, perspectives on the remaining challenges and future developments are proposed.

Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits

The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large-area electronics, particularly thin-film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High-permittivity (κ) oxide dielectrics are a key component for achieving low-voltage and high-performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO2 with high-κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low-cost devices, tremendous efforts have been devoted to vacuum-free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high-κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high-κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO2 is outlined. Recent achievements of solution-processed high-κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water-induced, self-combustion reaction, and energy-assisted post treatments, for the realization of flexible electronics and circuits are discussed.

Indirect X-ray Detectors Based on Inkjet-Printed Photodetectors with a Screen-Printed Scintillator Layer

Organic photodetectors (PDs) based on printing technologies will allow to expand the current field of PD applications toward large-area and flexible applications in areas such as medical imaging, security, and quality control, among others. Inkjet printing is a powerful digital tool for the deposition of smart and functional materials on various substrates, allowing the development of electronic devices such as PDs on various substrates. In this work, inkjet-printed PD arrays, based on the organic thin-film transistor architecture, have been developed and applied for the indirect detection of X-ray radiation using a scintillator ink as an X-ray absorber. The >90% increase of the photocurrent of the PDs under X-ray radiation, from about 53 nA without the scintillator film to about 102 nA with the scintillator located on top of the PD, proves the suitability of the developed printed device for X-ray detection applications.

Fabrication of Lanthanum Strontium Cobalt Ferrite-Gadolinium-Doped Ceria Composite Cathodes Using a Low-Price Inkjet Printer

In this work, we have successfully fabricated lanthanum strontium cobalt ferrite (LSCF)-gadolinium-doped ceria (GDC) composite cathodes by inkjet printing and demonstrated their functioning in solid oxide fuel cells (SOFCs). The cathodes are printed using a low-cost HP inkjet printer, and the LSCF and GDC source inks are synthesized with fluidic properties optimum for inkjet printing. The composition and microstructure of the LSCF and GDC layers are successfully controlled by controlling the color level in the printed images and the number of printing cycles, respectively. Anode-support type SOFCs with optimized LSCF-GDC composite cathodes synthesized by our inkjet printing method have achieved a power output of over 570 mW cm^-2 at 650 °C, which is comparable to the performance of a commercial SOFC stack. Electrochemical impedance analysis is carried out to establish a relationship between the cell performance and the compositional and structural characteristics of the printed LSCF-GDC composite cathodes.

Inkjet-Printed Electrodes on A4 Paper Substrates for Low-Cost, Disposable, and Flexible Asymmetric Supercapacitors

Printed electronics is widely gaining much attention for compact and high-performance energy-storage devices because of the advancement of flexible electronics. The development of a low-cost current collector, selection, and utilization of the proper material deposition tool and improvement of the device energy density are major challenges for the existing flexible supercapacitors. In this paper, we have reported an inkjet-printed solid-state asymmetric supercapacitor on commercial A4 paper using a low-cost desktop printer (EPSON L130). The physical properties of all inks have been carefully optimized so that the developed inks are within the printable range, i.e., Fromm number of 4 < Z < 14 for all inks. The paper substrate is made conducting (sheet resistance ∼ 1.6 Ω/sq) by printing 40 layers of conducting graphene oxide (GO) ink on its surface. The developed conducting patterns on paper are further printed with a GO-MnO₂ nanocomposite ink to make a positive electrode, and another such structure is printed with activated carbon ink to form a negative electrode. A combination of both of these electrodes is outlaid by fabricating an asymmetric supercapacitor. The assembled asymmetric supercapacitor with poly(vinyl alcohol) (PVA)-LiCl gel electrolyte shows a stable potential window of 0-2.0 V and exhibits outstanding flexibility, good cyclic stability, high rate capability, and high energy density. The fabricated paper-substrate-based flexible asymmetric supercapacitor also displays an excellent electrochemical performances, e.g., a maximum areal capacitance of 1.586 F/cm² (1023 F/g) at a current density of 4 mA/cm², highest energy density of 22 mWh/cm³ at a power density of 0.099 W/cm³, a capacity retention of 89.6% even after 9000 charge-discharge cycles, and a low charge-transfer resistance of 2.3 Ω. So, utilization of inkjet printing for the development of paper-based flexible electronics has a strong potential for embedding into the next generation low-cost, compact, and wearable energy-storage devices and other printed electronic applications.

UV-Cured Inkjet-Printed Silver Gate Electrode with Low Electrical Resistivity

Inkjet-printed silver gate electrode with low electrical resistivity was fabricated by UV curing method. By adjusting the UV curing time and the distance between the samples and UV lamp, the effects of UV curing conditions on the electrical resistivity of the silver films were studied, and the lowest electrical resistivity of 6.69 × 10^-8 Ω·m was obtained. Besides, the UV-cured silver films have good adhesion to the glass substrates, with adhesion strength of 4B (ASTM international standard). Our work offered an easy and low temperature approach to fabricate inkjet-printed silver electrodes with low electrical resistivity.

Inkjet printed nanomaterial based flexible radio frequency identification (RFID) tag sensors for the internet of nano things

The Internet of Things (IoT) has limitless possibilities for applications in the entire spectrum of our daily lives, from healthcare to automobiles to public safety.