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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024; 124:9785-9865. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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2
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Ma Y, Liang H, Guan X, Xu S, Tao M, Liu X, Zheng Z, Yao J, Yang G. Two-dimensional layered material photodetectors: what could be the upcoming downstream applications beyond prototype devices? NANOSCALE HORIZONS 2024. [PMID: 39046195 DOI: 10.1039/d4nh00170b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/25/2024]
Abstract
With distinctive advantages spanning excellent flexibility, rich physical properties, strong electrostatic tunability, dangling-bond-free surface, and ease of integration, 2D layered materials (2DLMs) have demonstrated tremendous potential for photodetection. However, to date, most of the research enthusiasm has been merely focused on developing novel prototype devices. In the past few years, researchers have also been devoted to developing various downstream applications based on 2DLM photodetectors to contribute to promoting them from fundamental research to practical commercialization, and extensive accomplishments have been realized. In spite of the remarkable advancements, these fascinating research findings are relatively scattered. To date, there is still a lack of a systematic and profound summarization regarding this fast-evolving domain. This is not beneficial to researchers, especially researchers just entering this research field, who want to have a quick, timely, and comprehensive inspection of this fascinating domain. To address this issue, in this review, the emerging downstream applications of 2DLM photodetectors in extensive fields, including imaging, health monitoring, target tracking, optoelectronic logic operation, ultraviolet monitoring, optical communications, automatic driving, and acoustic signal detection, have been systematically summarized, with the focus on the underlying working mechanisms. At the end, the ongoing challenges of this rapidly progressing domain are identified, and the potential schemes to address them are envisioned, which aim at navigating the future exploration as well as fully exerting the pivotal roles of 2DLMs towards the practical optoelectronic industry.
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Affiliation(s)
- Yuhang Ma
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Huanrong Liang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Xinyi Guan
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Shuhua Xu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Meiling Tao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Xinyue Liu
- Guangdong Provincial Key Laboratory of Nanophotonic Manipulation, Institute of Nanophotonics, Jinan University, Guangzhou 511443, China.
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China.
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
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3
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Gan W, Liu Y, Liu X, Xiao R, Ni K, Jiang M, Han H, Zhou X, Li S, Wu C, Li Y, Li H. Symmetry-Reduction Enhanced Polarization-Sensitive Photoresponse Based on One-Dimensional van der Waals Materials. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38693823 DOI: 10.1021/acsami.4c03233] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2024]
Abstract
Designing high-performance polarization-sensitive photodetectors is essential for photonic device applications. Anisotropic one-dimensional (1D) van der Waals (vdW) materials have provided a promising platform to that end. Despite significant advances in 1D vdW photonic devices, their performance is still far from delivering practical potential. Herein, we propose the design of high-performance polarization-sensitive photodetectors using unique 1D vdW materials. By leveraging the chemical vapor transport technique, we successfully fabricate high-quality 1D vdW Nb2Pd1-xSe5 (x = 0.29) nanowires. The 1D vdW Nb2Pd1-xSe5 photodetector exhibits a high mobility of ∼56 cm2/(V s) and superior photoresponse performance, including a high responsivity of 1A/W and an ultrafast response time of ∼8 μs under 638 nm illumination. Moreover, the 1D vdW Nb2Pd1-xSe5 photodetector demonstrates excellent polarization-sensitive photoresponse with a degree of linear polarization (DOLP) up to 0.85 and can be modulated by adjusting the gate voltage, laser power density, and wavelength. Those exceptional performance are believed to be relevant to the symmetry-reduction induced by the partial occupation of Pd sites. This study offers feasible approaches to enhance the anisotropy of 1D vdW materials and the modulation of their polarization-sensitive photoresponse, which may provide deep insights into the physical origin of anisotropic properties of 1D vdW materials.
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Affiliation(s)
- Wei Gan
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China
| | - Yucheng Liu
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China
| | - Xue Liu
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China
| | - Ruichun Xiao
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China
| | - Kaipeng Ni
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China
| | - Ming Jiang
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China
| | - Hui Han
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China
| | - Xiaoya Zhou
- Stony Brook Institute at Anhui University, Anhui University, Hefei 230039, China
| | - Sijia Li
- Stony Brook Institute at Anhui University, Anhui University, Hefei 230039, China
| | - Chuanqiang Wu
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China
| | - Yang Li
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Hui Li
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China
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Pelella A, Intonti K, Durante O, Kumar A, Viscardi L, De Stefano S, Romano P, Giubileo F, Neill H, Patil V, Ansari L, Roycroft B, Hurley PK, Gity F, Di Bartolomeo A. Multilayer WS 2 for low-power visible and near-infrared phototransistors. DISCOVER NANO 2024; 19:57. [PMID: 38528187 DOI: 10.1186/s11671-024-04000-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/16/2024] [Accepted: 03/18/2024] [Indexed: 03/27/2024]
Abstract
Mechanically exfoliated multilayer WS2 flakes are used as the channel of field effect transistors for low-power photodetection in the visible and near-infrared (NIR) spectral range. The electrical characterization as a function of the temperature reveals devices with n-type conduction and slightly different Schottky barriers at the drain and source contacts. The WS2 phototransistors can be operated in self-powered mode, yielding both a current and a voltage when exposed to light. The spectral photoresponse in the visible and the NIR ranges shows a high responsivity (4.5 μA/W) around 1250 nm, making the devices promising for telecommunication applications.
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Affiliation(s)
- Aniello Pelella
- Department of Science and Technology, University of Sannio, Via De Sanctis 59/A, 82100, Benevento, Italy
| | - Kimberly Intonti
- Department of Physics "E. R. Caianiello", University of Salerno, Via Giovanni Paolo II, 84084, Fisciano, Salerno, Italy
- CNR-SPIN Salerno, Via Giovanni Paolo II, 84084, Fisciano, Italy
| | - Ofelia Durante
- Department of Physics "E. R. Caianiello", University of Salerno, Via Giovanni Paolo II, 84084, Fisciano, Salerno, Italy
| | - Arun Kumar
- Department of Physics "E. R. Caianiello", University of Salerno, Via Giovanni Paolo II, 84084, Fisciano, Salerno, Italy
| | - Loredana Viscardi
- Department of Physics "E. R. Caianiello", University of Salerno, Via Giovanni Paolo II, 84084, Fisciano, Salerno, Italy
- CNR-SPIN Salerno, Via Giovanni Paolo II, 84084, Fisciano, Italy
| | - Sebastiano De Stefano
- Department of Physics "E. R. Caianiello", University of Salerno, Via Giovanni Paolo II, 84084, Fisciano, Salerno, Italy
| | - Paola Romano
- Department of Science and Technology, University of Sannio, Via De Sanctis 59/A, 82100, Benevento, Italy
- CNR-SPIN Salerno, Via Giovanni Paolo II, 84084, Fisciano, Italy
| | | | - Hazel Neill
- Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, T12 R5CP, Ireland
| | - Vilas Patil
- Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, T12 R5CP, Ireland
| | - Lida Ansari
- Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, T12 R5CP, Ireland
| | - Brendan Roycroft
- Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, T12 R5CP, Ireland
| | - Paul K Hurley
- Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, T12 R5CP, Ireland
- School of Chemistry, University College Cork, Cork, Ireland
| | - Farzan Gity
- Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, T12 R5CP, Ireland
| | - Antonio Di Bartolomeo
- Department of Physics "E. R. Caianiello", University of Salerno, Via Giovanni Paolo II, 84084, Fisciano, Salerno, Italy.
- CNR-SPIN Salerno, Via Giovanni Paolo II, 84084, Fisciano, Italy.
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5
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Liu Z, Tee SY, Guan G, Han MY. Atomically Substitutional Engineering of Transition Metal Dichalcogenide Layers for Enhancing Tailored Properties and Superior Applications. NANO-MICRO LETTERS 2024; 16:95. [PMID: 38261169 PMCID: PMC10805767 DOI: 10.1007/s40820-023-01315-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2023] [Accepted: 11/30/2023] [Indexed: 01/24/2024]
Abstract
Transition metal dichalcogenides (TMDs) are a promising class of layered materials in the post-graphene era, with extensive research attention due to their diverse alternative elements and fascinating semiconductor behavior. Binary MX2 layers with different metal and/or chalcogen elements have similar structural parameters but varied optoelectronic properties, providing opportunities for atomically substitutional engineering via partial alteration of metal or/and chalcogenide atoms to produce ternary or quaternary TMDs. The resulting multinary TMD layers still maintain structural integrity and homogeneity while achieving tunable (opto)electronic properties across a full range of composition with arbitrary ratios of introduced metal or chalcogen to original counterparts (0-100%). Atomic substitution in TMD layers offers new adjustable degrees of freedom for tailoring crystal phase, band alignment/structure, carrier density, and surface reactive activity, enabling novel and promising applications. This review comprehensively elaborates on atomically substitutional engineering in TMD layers, including theoretical foundations, synthetic strategies, tailored properties, and superior applications. The emerging type of ternary TMDs, Janus TMDs, is presented specifically to highlight their typical compounds, fabrication methods, and potential applications. Finally, opportunities and challenges for further development of multinary TMDs are envisioned to expedite the evolution of this pivotal field.
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Affiliation(s)
- Zhaosu Liu
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, People's Republic of China
| | - Si Yin Tee
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
| | - Guijian Guan
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, People's Republic of China.
| | - Ming-Yong Han
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, People's Republic of China.
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6
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Xiong Y, Chen T, Feng W. Broadband high-performance vertical WS 1.08Se 0.92/Si heterojunction photodetector with MXene electrode. NANOTECHNOLOGY 2023; 35:025201. [PMID: 37797612 DOI: 10.1088/1361-6528/ad005a] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/20/2023] [Accepted: 10/05/2023] [Indexed: 10/07/2023]
Abstract
Vertical semiconductor van der Waals heterojunctions are essential for fabricating high-performance photodetectors. However, the range of the spectral response and defect states of semiconductor materials are two critical factors affecting the performance of photodetectors. In this work, the spectral response range of WS2was changed through WS2band gap regulation, and a self-powered vertical WS1.08Se0.92/Si heterojunction photodetector with MXene electrode was prepared by synthesizing WS1.08Se0.92film on Si substrate and vertically stacking Ti3C2TxMXene on the film. Due to the electron collection of MXene and the wonderful junction quality of WS1.08Se0.92/Si, the photodetector can detect near-infrared light in the range of 980-1310 nm, which exceed the detection limit of WS1.08Se0.92. And the device had high sensitivity in the broadband. The responsivity was 4.58 A W-1, the specific detectivity was 4.58 × 1011Jones, the on/off ratio was 4.95 × 103, and the fast response time was 9.81/9.03μs. These properties are superior to previously reported WS2-based photodetectors. Vertical structure, Energy band tuning, and MXene electrode provide a new idea for preparing broadband high-performance and self-powered photodetector.
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Affiliation(s)
- Yuexu Xiong
- School of Physics and Astronomy, China West Normal University, Nanchong 637009, People's Republic of China
| | - Taihong Chen
- School of Physics and Astronomy, China West Normal University, Nanchong 637009, People's Republic of China
| | - Wenlin Feng
- School of Science, Chongqing University of Technology, Chongqing 400054, People's Republic of China
- Chongqing Key Laboratory of Green Energy Materials Technology and Systems, Chongqing 400054, People's Republic of China
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7
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Wang L, Xu F, Zhang C, Wageh S, Al-Hartomy OA, Zhang B, Yang T, Zhang H. Chemiresistive gas sensor based on Mo 0.5W 0.5S 2 alloy nanoparticles with good selectivity and ppb-level limit of detection to ammonia. Mikrochim Acta 2023; 190:283. [PMID: 37415040 DOI: 10.1007/s00604-023-05843-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/14/2023] [Accepted: 05/18/2023] [Indexed: 07/08/2023]
Abstract
Transition metal dichalcogenides (TMDs) are promising materials for chemiresistive gas sensor, while TMD alloys (two chalcogenide or/and metal elements) with tunable electronic structures have drawn little attention in gas sensing. Herein, Mo0.5W0.5S2 alloy nanoparticles (NPs) were prepared by a facile sonication exfoliation method and then tested for ammonia sensing. The crystal structure, geometric morphology, and elemental composition of Mo0.5W0.5S2 NPs were investigated. The gas sensing measurements demonstrated Mo0.5W0.5S2 NPs with good response to ammonia at 80 °C with a limit of detection down to 500 part per billion (ppb). The sensor also displayed good stability as well as superb selectivity to ammonia in the presence of interferences, such as methanol, acetone, benzene, and cyclohexane. The theoretical calculations revealed Mo and W atoms at edges (such as Mo0.5W0.5S2 (010)) of sheet-like NPs as the active sites for ammonia adsorption. Electrons donated by the adsorbed ammonia were combined with holes in p-type Mo0.5W0.5S2 NPs, and the concentration of the main charge carrier was reduced, resulting in resistance enhancement.
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Affiliation(s)
- Lude Wang
- School of Artificial Intelligence and Information Technology, Nanjing University of Chinese Medicine, No. 138 Xianling Rd, Nanjing, 210023, China
- School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Feicui Xu
- School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Chen Zhang
- School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Swelm Wageh
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia
| | - Omar A Al-Hartomy
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia
| | - Bin Zhang
- Otolaryngology Department and Biobank of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen, 518060, People's Republic of China.
| | - Tingqiang Yang
- School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
| | - Han Zhang
- School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
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Wang Y, Liu L, Shi Y, Li S, Sun F, Lu Q, Shen Y, Feng S, Qin S. Fast and High-Performance Self-Powered Photodetector Based on the ZnO/Metal-Organic Framework Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2023; 15:18236-18243. [PMID: 37000593 DOI: 10.1021/acsami.3c01740] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Electrical conductive metal-organic frameworks (EC-MOFs) are emerging as an appealing class of highly tailorable electrically conducting materials with potential applications in optoelectronics. Here, we in situ grew nickel hexahydroxytriphenylene (Ni-CAT) on the surface of ZnO nanorods (NRs). The self-powered photodetectors (PDs) were fabricated with heterojunctions formed at the interface of ZnO NRs and Ni-CAT. With this, the built-in electric field (BEF) can effectively separate the photogenerated electron-hole pairs and enhance the photoresponse. We observe that the PDs based on hybrid ZnO/Ni-CAT with 3 h of growth time (ZnO/Ni-CAT-3) show good photoresponse (137 μA/W) with the fast rise (3 ms) and decay time (50 ms) under 450 nm light illumination without biased voltage. This work provides a facile and controllable method for the growth of the ZnO/Ni-CAT heterojunction with an effective BEF zone, which will benefit their optoelectronic applications.
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Affiliation(s)
- Yingyi Wang
- Department of Health and Environmental Sciences, Xi'an Jiaotong-Liverpool University, 111 Ren'ai Road, Suzhou, Jiangsu, 215123, PR China
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu, 215123, PR China
- Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool L69 7ZX, U.K
| | - Lin Liu
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu, 215123, PR China
| | - Yixiang Shi
- Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong 999077, PR China
| | - Shengzhao Li
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu, 215123, PR China
| | - Fuqin Sun
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu, 215123, PR China
| | - Qifeng Lu
- School of CHIPS, XJTLU Entrepreneur College (Taicang), Xi'an Jiaotong-Liverpool University, 111 Taicang Avenue, Taicang, Suzhou, Jiangsu 215488, PR China
| | - Yaochun Shen
- Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool L69 7ZX, U.K
| | - Simin Feng
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu, 215123, PR China
| | - Sujie Qin
- Department of Health and Environmental Sciences, Xi'an Jiaotong-Liverpool University, 111 Ren'ai Road, Suzhou, Jiangsu, 215123, PR China
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9
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He K, Xu W, Tang J, Lu Y, Yi C, Li B, Zhu H, Zhang H, Lin X, Feng Y, Zhu M, Shen J, Zhong M, Li B, Duan X. Centimeter-Scale PdS 2 Ultrathin Films with High Mobility and Broadband Photoresponse. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206915. [PMID: 36725313 DOI: 10.1002/smll.202206915] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2022] [Revised: 01/18/2023] [Indexed: 06/18/2023]
Abstract
2D materials with mixed crystal phase will lead to the nonuniformity of performance and go against the practical application. Therefore, it is of great significance to develop a valid method to synthesize 2D materials with typical stoichiometry. Here, 2D palladium sulfides with centimeter scale and uniform stoichiometric ratio are synthesized via controlling the sulfurization temperature of palladium thin films. The relationship between sulfurization temperature and products is investigated in depth. Besides, the high-quality 2D PdS2 films are synthesized via sulfurization at the temperature of 450-550 °C, which would be compatible with back-end-of-line processes in semiconductor industry with considering of process temperature. The PdS2 films show an n-type semiconducting behavior with high mobility of 10.4 cm2 V-1 s-1 . The PdS2 photodetector presents a broadband photoresponse from 450 to 1550 nm. These findings provide a reliable way to synthesizing high-quality and large-area 2D materials with uniform crystal phase. The result suggests that 2D PdS2 has significant potential in future nanoelectronics and optoelectronic applications.
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Affiliation(s)
- Kun He
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, School of Physics and Electronics, Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Weiting Xu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, School of Physics and Electronics, Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Jingmei Tang
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Yuan Lu
- School of Materials Science and Energy Engineering, Foshan University, Foshan, 528000, China
| | - Chen Yi
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, School of Physics and Electronics, Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Bailing Li
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Hongzhou Zhu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, School of Physics and Electronics, Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Hongmei Zhang
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Xiaohui Lin
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Ya Feng
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, School of Physics and Electronics, Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Manli Zhu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, School of Physics and Electronics, Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Jingru Shen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, School of Physics and Electronics, Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Mianzeng Zhong
- School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Bo Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, School of Physics and Electronics, Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
- Research Institute of Hunan University in Chongqing, Chongqing, 401120, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
| | - Xidong Duan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
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10
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Huang Z, Zhou Y, Luo Z, Yang Y, Yang M, Gao W, Yao J, Zhao Y, Yang Y, Zheng Z, Li J. Integration of photovoltaic and photogating effects in a WSe 2/WS 2/p-Si dual junction photodetector featuring high-sensitivity and fast-response. NANOSCALE ADVANCES 2023; 5:675-684. [PMID: 36756495 PMCID: PMC9891068 DOI: 10.1039/d2na00552b] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/17/2022] [Accepted: 11/26/2022] [Indexed: 06/09/2023]
Abstract
Two-dimensional (2D) material-based van der Waals (vdW) heterostructures with exotic semiconducting properties have shown tremendous potential in next-generation photovoltaic photodetectors. Nevertheless, these vdW heterostructure devices inevitably suffer from a compromise between high sensitivity and fast response. Herein, an ingenious photovoltaic photodetector based on a WSe2/WS2/p-Si dual-vdW heterojunction is demonstrated. First-principles calculations and energy band profiles consolidate that the photogating effect originating from the bottom vdW heterojunction not only strengthens the photovoltaic effect of the top vdW heterojunction, but also suppresses the recombination of photogenerated carriers. As a consequence, the separation of photogenerated carriers is facilitated and their lifetimes are extended, resulting in higher photoconductive gain. Coupled with these synergistic effects, this WSe2/WS2/p-Si device exhibits both high sensitivity (responsivity of 340 mA W-1, a light on/off ratio greater than 2500, and a detectivity of 3.34 × 1011 Jones) and fast response time (rise/decay time of 657/671 μs) under 405 nm light illumination in self-powered mode. Finally, high-resolution visible-light and near-infrared imaging capabilities are demonstrated by adopting this dual-heterojunction device as a single pixel, indicating its great application prospects in future optoelectronic systems.
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Affiliation(s)
- Zihao Huang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University Guangzhou 510275 Guangdong P. R. China
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
| | - Yuchen Zhou
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
- Honor Device Co.,Ltd Shenzhen 518000 Guangdong P. R. China
| | - Zhongtong Luo
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
| | - Yibing Yang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
| | - Mengmeng Yang
- Institute of Semiconductors, South China Normal University Foshan 528225 Guangdong P. R. China
| | - Wei Gao
- Institute of Semiconductors, South China Normal University Foshan 528225 Guangdong P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University Guangzhou 510275 Guangdong P. R. China
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
| | - Yuhua Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University Guangzhou 510275 Guangdong P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
| | - Jingbo Li
- Institute of Semiconductors, South China Normal University Foshan 528225 Guangdong P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology Guangzhou 510631 P. R. China
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11
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Pu J, Ou H, Yamada T, Wada N, Naito H, Ogura H, Endo T, Liu Z, Irisawa T, Yanagi K, Nakanishi Y, Gao Y, Maruyama M, Okada S, Shinokita K, Matsuda K, Miyata Y, Takenobu T. Continuous Color-Tunable Light-Emitting Devices Based on Compositionally Graded Monolayer Transition Metal Dichalcogenide Alloys. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203250. [PMID: 36086880 DOI: 10.1002/adma.202203250] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2022] [Revised: 08/29/2022] [Indexed: 06/15/2023]
Abstract
The diverse series of transition metal dichalcogenide (TMDC) materials has been employed in various optoelectronic applications, such as photodetectors, light-emitting diodes, and lasers. Typically, the detection or emission range of optoelectronic devices is unique to the bandgap of the active material. Therefore, to improve the capability of these devices, extensive efforts have been devoted to tune the bandgap, such as gating, strain, and dielectric engineering. However, the controllability of these methods is severely limited (typically ≈0.1 eV). In contrast, alloying TMDCs is an effective approach that yields a composition-dependent bandgap and enables light emissions over a wide range. In this study, a color-tunable light-emitting device using compositionally graded TMDC alloys is fabricated. The monolayer WS2 /WSe2 alloy grown by chemical vapor deposition shows a spatial gradient in the light-emission energy, which varies from 2.1 to 1.7 eV. This alloy is incorporated in an electrolyte-based light-emitting device structure that can tune the recombination zone laterally. Thus, a continuous and reversible color-tunable light-emitting device is successfully fabricated by controlling the light-emitting positions. The results provide a new approach for exploring monolayer semiconductor-based broadband optical applications.
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Affiliation(s)
- Jiang Pu
- Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan
| | - Hao Ou
- Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan
| | - Tomoyuki Yamada
- Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan
| | - Naoki Wada
- Department of Physics, Tokyo Metropolitan University, Tokyo, 192-0397, Japan
| | - Hibiki Naito
- Department of Physics, Tokyo Metropolitan University, Tokyo, 192-0397, Japan
| | - Hiroto Ogura
- Department of Physics, Tokyo Metropolitan University, Tokyo, 192-0397, Japan
| | - Takahiko Endo
- Department of Physics, Tokyo Metropolitan University, Tokyo, 192-0397, Japan
| | - Zheng Liu
- Innovative Functional Materials Research Institute, AIST, Nagoya, 463-8560, Japan
| | - Toshifumi Irisawa
- Device Technology Research Institute, AIST, Tsukuba, 305-8562, Japan
| | - Kazuhiro Yanagi
- Department of Physics, Tokyo Metropolitan University, Tokyo, 192-0397, Japan
| | - Yusuke Nakanishi
- Department of Physics, Tokyo Metropolitan University, Tokyo, 192-0397, Japan
| | - Yanlin Gao
- Department of Physics, University of Tsukuba, Tsukuba, 305-8571, Japan
| | - Mina Maruyama
- Department of Physics, University of Tsukuba, Tsukuba, 305-8571, Japan
| | - Susumu Okada
- Department of Physics, University of Tsukuba, Tsukuba, 305-8571, Japan
| | - Keisuke Shinokita
- Institute of Advanced Energy, Kyoto University, Kyoto, 611-0011, Japan
| | - Kazunari Matsuda
- Institute of Advanced Energy, Kyoto University, Kyoto, 611-0011, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Tokyo, 192-0397, Japan
| | - Taishi Takenobu
- Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan
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12
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Gao P, Yang M, Wang C, Li H, Yang B, Zheng Z, Huo N, Gao W, Luo D, Li J. Low-pressure PVD growth SnS/InSe vertical heterojunctions with type-II band alignment for typical nanoelectronics. NANOSCALE 2022; 14:14603-14612. [PMID: 36156046 DOI: 10.1039/d2nr04165k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Two-dimensional (2D) polarization-sensitive detection as a new photoelectric application technology is extensively investigated. However, most devices are mainly based on individual anisotropic materials, which suffer from large dark current and relatively low anisotropic ratio, limiting the practical application in polarized imaging system. Herein, we design a van der Waals (vdWs) p-type SnS/n-type InSe vertical heterojunction with proposed type-II band alignment via low-pressure physical vapor deposition (LPPVD) and dry transfer method. The performance compared with the distinctive thickness of anisotropic SnS component was first studied. The fabricated device with a thick (80 nm) SnS nanosheet exhibits a larger rectification ratio exceeding 103. Moreover, the SnS/InSe heterostructure shows a broadband spectral photoresponse from 405 to 1100 nm with a significant photovoltaic effect. Due to efficient photogenerated carrier separation across the wide depletion region at zero bias, the device with thinner (12.4 nm) SnS exhibits trade-off photoresponse performance with a maximum responsivity of 215 mA W-1, an external quantum efficiency of 42.2%, specific detectivity of 1.05 × 1010 Jones, and response time of 8.6/4.2 ms under 635 nm illumination, respectively. In contrast, benefiting from the stronger in-plane anisotropic structure of thinner SnS component, the device delivers a large photocurrent anisotropic ratio of 4.6 under 635 nm illumination in a zigzag manner. Above all, our work provides a new design scheme for multifunctional optoelectronic applications based on thickness-dependent 2D vdWs heterostructures.
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Affiliation(s)
- Peng Gao
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Mengmeng Yang
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Chuanglei Wang
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Hengyi Li
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Baoxiang Yang
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Nengjie Huo
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Wei Gao
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Dongxiang Luo
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China
- Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, PR China
| | - Jingbo Li
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
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13
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He Z, Xiong Y, Feng W. Vertically oriented ReS 2(1-x)Se 2x nanosheet-formed porous arrays on SiO 2/Si substrates for ultraviolet-visible photoelectric detection. NANOSCALE 2022; 14:14585-14593. [PMID: 36155614 DOI: 10.1039/d2nr03085c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Rhenium (Re)-based transition metal dichalcogenides (TMDs) have excellent in-plane anisotropic optical and electrical properties. However, their distorted octahedral (1T') structure and weak interlayer coupling easily lead to anisotropic and out-of-plane growth, which makes it particularly difficult to prepare large-area Re-based TMD continuous porous films on SiO2/Si substrates. In this work, ReS2 films are synthesized on SiO2/Si substrates by using tellurium (Te) powder-assisted chemical vapor deposition, and then the films are selenized to synthesize a series of continuous large-area ReS2(1-x)Se2x (x = 0, 0.34, 0.56, 0.84, and 0.91) nanosheet-formed porous films. Furthermore, prototype ReS2(1-x)Se2x photodetectors with different Se compositions are fabricated. The surface morphology, high quality crystallization and compositions are confirmed by various characterization techniques. The ReS2(1-x)Se2x photodetectors based on these films show excellent ultraviolet-visible (UV-vis) spectral responses and self-powered characteristics. The response time is faster, and the photocurrent increases with the Se composition. Due to the Schottky barrier generated by the Ag-ReS2(1-x)Se2x interface, the device without bias voltage has a superior responsivity (121.9 mA W-1), high detectivity (5.27 × 1012 Jones), good on/off ratio (1.2 × 103) and fast response time (rising/decay times, 30/60 ms) under 365 nm light irradiation. This simple and controllable method opens up a new way to produce high-quality vertically oriented ReS2(1-x)Se2x porous arrays on SiO2/Si substrates for next-generation application in UV-vis photodetectors.
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Affiliation(s)
- Zhiyong He
- School of Science, Chongqing University of Technology, Chongqing 400054, China
| | - Yuexu Xiong
- School of Physics and Astronomy, China West Normal University, Nanchong 623300, China
| | - Wenlin Feng
- School of Science, Chongqing University of Technology, Chongqing 400054, China
- Chongqing Key Laboratory of Green Energy Materials Technology and Systems, Chongqing 400054, China.
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14
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Yan Y, Xia K, Gan W, Yang K, Li G, Tang X, Li L, Zhang C, Fei GT, Li H. A tellurium short-wave infrared photodetector with fast response and high specific detectivity. NANOSCALE 2022; 14:13187-13191. [PMID: 36047440 DOI: 10.1039/d2nr02822k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) elementary tellurium (Te) has attracted intensive attention due to its potential applications in short-wave infrared photodetector devices. Here, we report hydrothermally synthesized 2D Te nanoflakes for short-wave infrared photodetectors with high performance. A Te-based photodetector exhibits a peak responsivity of 51.85 A W-1 at a 1550 nm wavelength, attributed to the efficient absorption of the phonons of 2D Te nanoflakes. Besides, the rising and decay time of the Te photodetector is calculated to be ∼19 μs and ∼21 μs, respectively, due to the rapid diffusion of charge carriers. In addition, Te-photodetectors exhibit a high specific detectivity (D*) of 1.88 × 1010 Jones and a superior external quantum efficiency (EQE) of 4148%. Our findings have demonstrated the development of high-performance short-wave infrared photodetectors with fast responses based on 2D Te nanoflakes.
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Affiliation(s)
- Yafei Yan
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Kai Xia
- University of Science and Technology of China, Hefei 230026, P. R. China
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China.
| | - Wei Gan
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Kemeng Yang
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Gang Li
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Xi Tang
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Liang Li
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China.
| | - Changjin Zhang
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
- High Magnetic Field Laboratory of Anhui Province, Chinese Academy of Sciences, Hefei 230031, China
| | - Guang Tao Fei
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China.
| | - Hui Li
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
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15
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Huang J, Zhang Z, Ying Y, Gan M, Huang H, Fei L. Atomic-scale mechanisms on the stepwise growth of Mo xW 1-xS 2 into hexagonal flakes. Chem Commun (Camb) 2022; 58:9746-9749. [PMID: 35858288 DOI: 10.1039/d2cc02465a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The systematic in situ transmission electron microscopy (TEM) analysis suggests three stepwise formation stages during the growth of MoxW1-xS2 hexagonal flakes, which are the initial assembly of precursors into vertical structures, subsequent transition into horizontal structures, and final surface relaxing and faceting into hexagonal flakes.
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Affiliation(s)
- Jiawei Huang
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, China.
| | - Zhouyang Zhang
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, China.
| | - Yiran Ying
- Department of Applied Physics and Research Institute for Smart Energy, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Min Gan
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, China.
| | - Haitao Huang
- Department of Applied Physics and Research Institute for Smart Energy, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Linfeng Fei
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, China.
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16
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Wang L, Li X, Pei C, Wei C, Dai J, Huang X, Li H. Single- and few-layer 2H-SnS2 and 4H-SnS2 nanosheets for high-performance photodetection. CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2021.09.094] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/03/2022]
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17
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Yao J, Yang G. 2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103036. [PMID: 34719873 PMCID: PMC8728821 DOI: 10.1002/advs.202103036] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2021] [Revised: 09/01/2021] [Indexed: 05/12/2023]
Abstract
2D layered materials (2DLMs) have come under the limelight of scientific and engineering research and broke new ground across a broad range of disciplines in the past decade. Nevertheless, the members of stoichiometric 2DLMs are relatively limited. This renders them incompetent to fulfill the multitudinous scenarios across the breadth of electronic and optoelectronic applications since the characteristics exhibited by a specific material are relatively monotonous and limited. Inspiringly, alloying of 2DLMs can markedly broaden the 2D family through composition modulation and it has ushered a whole new research domain: 2DLM alloy nano-electronics and nano-optoelectronics. This review begins with a comprehensive survey on synthetic technologies for the production of 2DLM alloys, which include chemical vapor transport, chemical vapor deposition, pulsed-laser deposition, and molecular beam epitaxy, spanning their development, as well as, advantages and disadvantages. Then, the up-to-date advances of 2DLM alloys in electronic devices are summarized. Subsequently, the up-to-date advances of 2DLM alloys in optoelectronic devices are summarized. In the end, the ongoing challenges of this emerging field are highlighted and the future opportunities are envisioned, which aim to navigate the coming exploration and fully exert the pivotal role of 2DLMs toward the next generation of electronic and optoelectronic devices.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
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18
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Yang M, Gao W, He M, Zhang S, Huang Y, Zheng Z, Luo D, Wu F, Xia C, Li J. Self-driven SnS 1-xSe x alloy/GaAs heterostructure based unique polarization sensitive photodetectors. NANOSCALE 2021; 13:15193-15204. [PMID: 34515718 DOI: 10.1039/d1nr05062a] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
With the fast development of semiconductor technology, self-driven devices have become an indispensable part of modern electronic and optoelectronic components. In this field, in addition to traditional Schottky and p-n junction devices, hybrid 2D/3D semiconductor heterostructures provide an alternative platform for optoelectronic applications. Herein we report the growth of 2D SnS1-xSex (x = 0, 0.5, 1) nanosheets and the construction of a hybrid SnS0.5Se0.5/GaAs heterostructure based self-driven photodetector. The strong anisotropy of 2D SnS1-xSex is demonstrated theoretically and experimentally. The self-driven photodetector shows high sensitivity to incident light from the visible to near-infrared regime. At the wavelength of 405 nm, the device enables maximum responsivity of 10.2 A W-1, high detectivity of 4.8 × 1012 Jones and fast response speed of 0.5/3.47 ms. Impressively, such a heterostructure device exhibits anisotropic photodetection characteristics with the dichroic ratio of ∼1.25 at 405 nm and ∼1.45 at 635 nm. These remarkable features can be attributed to the high-quality built-in potential at the SnS0.5Se0.5/GaAs interface and the alloy engineering, which effectively separates the photogenerated carriers and suppresses the deep-level defects, respectively. These results imply the great potential of our SnS0.5Se0.5/GaAs heterostructure for high-performance photodetection devices.
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Affiliation(s)
- Mengmeng Yang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, Guangdong, P. R. China.
| | - Wei Gao
- Institute of Semiconductors, South China Normal University, Guangzhou, 510631, Guangdong, P. R. China.
- Guangdong Key Lab of Chip and Integration Technology, Guangzhou 510631, P.R. China
| | - Mengjie He
- Physics and Electronic Engineering College, Henan Normal University, Xinxiang 453007, P. R. China
| | - Shuai Zhang
- Institute of Semiconductors, South China Normal University, Guangzhou, 510631, Guangdong, P. R. China.
| | - Ying Huang
- Institute of Semiconductors, South China Normal University, Guangzhou, 510631, Guangdong, P. R. China.
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, Guangdong, P. R. China.
| | - Dongxiang Luo
- Institute of Semiconductors, South China Normal University, Guangzhou, 510631, Guangdong, P. R. China.
- Guangdong Key Lab of Chip and Integration Technology, Guangzhou 510631, P.R. China
| | - Fugen Wu
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, Guangdong, P. R. China.
| | - Congxin Xia
- Physics and Electronic Engineering College, Henan Normal University, Xinxiang 453007, P. R. China
| | - Jingbo Li
- Institute of Semiconductors, South China Normal University, Guangzhou, 510631, Guangdong, P. R. China.
- Guangdong Key Lab of Chip and Integration Technology, Guangzhou 510631, P.R. China
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19
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Yao J, Yang G. Multielement 2D layered material photodetectors. NANOTECHNOLOGY 2021; 32:392001. [PMID: 34111857 DOI: 10.1088/1361-6528/ac0a16] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2021] [Accepted: 06/10/2021] [Indexed: 06/12/2023]
Abstract
The pronounced quantum confinement effects, outstanding mechanical strength, strong light-matter interactions and reasonably high electric transport properties under atomically thin limit have conjointly established 2D layered materials (2DLMs) as compelling building blocks towards the next generation optoelectronic devices. By virtue of the diverse compositions and crystal structures which bring about abundant physical properties, multielement 2DLMs (ME2DLMs) have become a bran-new research focus of tremendous scientific enthusiasm. Herein, for the first time, this review provides a comprehensive overview on the latest evolution of ME2DLM photodetectors. The crystal structures, synthesis, and physical properties of various experimentally realized ME2DLMs as well as the development in metal-semiconductor-metal photodetectors are comprehensively summarized by dividing them into narrow-bandgap ME2DLMs (including Bi2O2X (X = S, Se, Te), EuMTe3(M = Bi, Sb), Nb2XTe4(X = Si, Ge), Ta2NiX5(X = S, Se), M2PdX6(M = Ta, Nb; X = S, Se), PbSnS2), moderate-bandgap ME2DLMs (including CuIn7Se11, CuTaS3, GaGeTe, TlMX2(M = Ga, In; X = S, Se)), wide-bandgap ME2DLMs (including BiOX (X = F, Cl, Br, I), MPX3(M = Fe, Ni, Mn, Cd, Zn; X = S, Se), ABP2X6(A = Cu, Ag; B = In, Bi; X = S, Se), Ga2In4S9), as well as topological ME2DLMs (MIrTe4(M = Ta, Nb)). In the last section, the ongoing challenges standing in the way of further development are underscored and the potential strategies settling them are proposed, which is aimed at navigating the future advancement of this fascinating domain.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, People's Republic of China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, People's Republic of China
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20
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Lin Y, Torsi R, Geohegan DB, Robinson JA, Xiao K. Controllable Thin-Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2004249. [PMID: 33977064 PMCID: PMC8097379 DOI: 10.1002/advs.202004249] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2020] [Revised: 12/06/2020] [Indexed: 06/01/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) exhibit exciting properties and versatile material chemistry that are promising for device miniaturization, energy, quantum information science, and optoelectronics. Their outstanding structural stability permits the introduction of various foreign dopants that can modulate their optical and electronic properties and induce phase transitions, thereby adding new functionalities such as magnetism, ferroelectricity, and quantum states. To accelerate their technological readiness, it is essential to develop controllable synthesis and processing techniques to precisely engineer the compositions and phases of 2D TMDs. While most reviews emphasize properties and applications of doped TMDs, here, recent progress on thin-film synthesis and processing techniques that show excellent controllability for substitutional doping of 2D TMDs are reported. These techniques are categorized into bottom-up methods that grow doped samples on substrates directly and top-down methods that use energetic sources to implant dopants into existing 2D crystals. The doped and alloyed variants from Group VI TMDs will be at the center of technical discussions, as they are expected to play essential roles in next-generation optoelectronic applications. Theoretical backgrounds based on first principles calculations will precede the technical discussions to help the reader understand each element's likelihood of substitutional doping and the expected impact on the material properties.
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Affiliation(s)
- Yu‐Chuan Lin
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Riccardo Torsi
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - David B. Geohegan
- Center for Nanophase Materials SciencesOak Ridge National LaboratoryOak RidgeTN37831USA
| | - Joshua A. Robinson
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Two‐Dimensional Crystal ConsortiumThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Center for 2‐Dimensional and Layered MaterialsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Kai Xiao
- Center for Nanophase Materials SciencesOak Ridge National LaboratoryOak RidgeTN37831USA
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21
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Zhou Y, Zhang L, Gao W, Yang M, Lu J, Zheng Z, Zhao Y, Yao J, Li J. A reasonably designed 2D WS 2 and CdS microwire heterojunction for high performance photoresponse. NANOSCALE 2021; 13:5660-5669. [PMID: 33724286 DOI: 10.1039/d1nr00210d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Heterojunctions based on low-dimensional materials can combine the superiorities of each component and realize novel properties. Herein, a mixed-dimensional heterojunction comprising multilayer WS2, CdS microwire, and few-layer WS2 has been demonstrated. The working mechanism and its application in a photodetector are investigated. The multilayer WS2 and CdS microwire are utilized to provide efficient light absorption, while the few-layer WS2 is utilized to passivate interfacial impurity scattering. In addition, based on the reasonable band alignment of the components, three built-in electric fields are formed, which efficiently separate the photo-generated carriers and enhance the photocurrent. In particular, the photo-generated electrons are trapped in CdS, while the photo-generated holes circulate in the external circuit, leading to a high photoconductivity gain. Motivated by these, we constructed a device that exhibits a photoresponsivity of ∼4.7 A W-1, a response/recovery time of 13.7/15.8 ms, and a detectivity of 3.4 × 1012 Jones, which are much better than the counterparts. All of these clearly demonstrate the importance of advanced device designs for realizing high performance optoelectronic devices.
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Affiliation(s)
- Yuchen Zhou
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, Guangdong, P. R. China.
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Du J, Yu H, Liu B, Hong M, Liao Q, Zhang Z, Zhang Y. Strain Engineering in 2D Material-Based Flexible Optoelectronics. SMALL METHODS 2021; 5:e2000919. [PMID: 34927808 DOI: 10.1002/smtd.202000919] [Citation(s) in RCA: 40] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2020] [Revised: 11/22/2020] [Indexed: 06/14/2023]
Abstract
Flexible optoelectronics, as promising components hold shape-adaptive features and dynamic strain response under strain engineering for various intelligent applications. 2D materials with atomically thin layers are ideal for flexible optoelectronics because of their high flexibility and strain sensitivity. However, how the strain affects the performance of 2D materials-based flexible optoelectronics is confused due to their hypersensitive features to external strain changes. It is necessary to establish an evaluation system to comprehend the influence of the external strain on the intrinsic properties of 2D materials and the photoresponse performance of their flexible optoelectronics. Here, a focused review of strain engineering in 2D materials-based flexible optoelectronics is provided. The first attention is on the mechanical properties and the strain-engineered electronic properties of 2D semiconductors. An evaluation system with relatively comprehensive parameters in functionality and service capability is summarized to develop 2D materials-based flexible optoelectronics in practical application. Based on the parameters, some strategies to improve the functionality and service capability are proposed. Finally, combining with strain engineering in future intelligence devices, the challenges and future perspective developing 2D materials-based flexible optoelectronics are expounded.
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Affiliation(s)
- Junli Du
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Huihui Yu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Baishan Liu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Mengyu Hong
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Qingliang Liao
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zheng Zhang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Municipal Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Municipal Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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Nalwa HS. A review of molybdenum disulfide (MoS 2) based photodetectors: from ultra-broadband, self-powered to flexible devices. RSC Adv 2020; 10:30529-30602. [PMID: 35516069 PMCID: PMC9056353 DOI: 10.1039/d0ra03183f] [Citation(s) in RCA: 47] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2020] [Accepted: 07/17/2020] [Indexed: 12/23/2022] Open
Abstract
Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.
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Affiliation(s)
- Hari Singh Nalwa
- Advanced Technology Research 26650 The Old Road Valencia California 91381 USA
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Liu J, Li X, Wang H, Yuan G, Suvorova A, Gain S, Ren Y, Lei W. Ultrathin High-Quality SnTe Nanoplates for Fabricating Flexible Near-Infrared Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:31810-31822. [PMID: 32585086 DOI: 10.1021/acsami.0c07847] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
This work demonstrates a controlled van der Waals growth of two-dimensional SnTe nanoplates on mica substrates and their applications in flexible near-infrared photodetectors. The growth of nonlayered rock-salt structured SnTe crystals into two-dimensional SnTe nanoplate structures is mainly caused by the two-dimensional nature of the mica surface, which also results in the ultrathin nanoplates obtained (3.6 nm, equivalent to 6 monolayers). Furthermore, it is found that the shape of the SnTe nanoplates can be well engineered by changing their growth temperature due to the competition between the surface energy of the {100} crystallographic plane and that of the {111} plane. As a result of the favorable physical properties of topological crystalline insulators such as metallic surface (high electron mobility) and narrow bandgap, near-infrared photodetectors based on single SnTe nanoplate with the thickness of 3.6 nm present excellent device performance with a responsivity of 698 mA/W, a specific detectivity of 3.89 × 108 jones, and an external quantum efficiency of 88.5% under the illumination of a 980 nm laser at room temperature (300 K) without applying a gate voltage (Vg). Upon increasing the gate voltage from -30 to 30 V, the detector responsivity increases from 2.96 to 723 mA/W and the detector detectivity increases from 2.4 × 106 to 5.3 × 108 jones. Furthermore, upon increasing the thickness of SnTe nanoplate from 3.6 to 35 nm, the detector responsivity increases from 0.698 to 1.468 A/W. The device performance measured after bending for 300 times as well as after bending with different radii presents no obvious degradation, which exhibits the excellent flexibility of the SnTe nanoplate detectors. These results not only contribute to a deep understanding of the mechanisms of the van der Waals growth of nonlayered materials into two-dimensional structure but also demonstrate the immense potential of SnTe nanoplates to be used in flexible near-infrared detectors.
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Affiliation(s)
- Junliang Liu
- Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Crawley 6009, Australia
| | - Xiao Li
- Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Crawley 6009, Australia
| | - Han Wang
- Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Crawley 6009, Australia
| | - Guang Yuan
- College of Information Science and Engineering, Ocean University of China, Qingdao 266100, China
| | - Alexandra Suvorova
- Centre for Microscopy, Characterisation and Analysis, The University of Western Australia, 35 Stirling Highway, Crawley 6009, Australia
| | - Sarah Gain
- Centre for Microscopy, Characterisation and Analysis, The University of Western Australia, 35 Stirling Highway, Crawley 6009, Australia
| | - Yongling Ren
- Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Crawley 6009, Australia
| | - Wen Lei
- Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Crawley 6009, Australia
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Hou K, Huang Z, Liu S, Liao G, Qiao H, Li H, Qi X. A hydrothermally synthesized MoS 2(1-x)Se 2x alloy with deep-shallow level conversion for enhanced performance of photodetectors. NANOSCALE ADVANCES 2020; 2:2185-2191. [PMID: 36132533 PMCID: PMC9418964 DOI: 10.1039/d0na00202j] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2020] [Accepted: 04/03/2020] [Indexed: 05/26/2023]
Abstract
Photoelectric detectors based on binary transition metal chalcogenides have attracted widespread attention in recent years. However, due to the high-temperature synthesis of binary TMD, high-density deep-level defect states may be generated, leading to poor responsiveness or a long response time. Besides, the addition of an alloy will change the DLDSs from deep to shallow energy levels caused by S vacancies. In this paper, MoS2(1-x)Se2x nanostructures were synthesized by a hydrothermal method, and a novel type of photodetector was fabricated by using the synthesized material as a light sensitive material. The MoSSe-based photodetector not only has a high photocurrent, but also exhibits a wide spectral response in the range of 405 nm to 808 nm. At the same time, it can achieve a responsivity of 1.753 mA W-1 under 660 nm laser irradiation of 1.75 mW mm-2. Therefore, this work can be considered as a method of constructing a new type of photodetector with a simple process and low cost.
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Affiliation(s)
- Kaiqiang Hou
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, School of Physics and Optoelectronic, Xiangtan University Hunan 411105 P. R. China
| | - Zongyu Huang
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, School of Physics and Optoelectronic, Xiangtan University Hunan 411105 P. R. China
| | - Shengqian Liu
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, School of Physics and Optoelectronic, Xiangtan University Hunan 411105 P. R. China
| | - Gengcheng Liao
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, School of Physics and Optoelectronic, Xiangtan University Hunan 411105 P. R. China
| | - Hui Qiao
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, School of Physics and Optoelectronic, Xiangtan University Hunan 411105 P. R. China
| | - Hongxing Li
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, School of Physics and Optoelectronic, Xiangtan University Hunan 411105 P. R. China
| | - Xiang Qi
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, School of Physics and Optoelectronic, Xiangtan University Hunan 411105 P. R. China
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26
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Abstract
Our review provides a comprehensive overview of the latest evolution of broadband photodetectors (BBPDs) based on 2D materials (2DMs). We begin with BBPDs built on various 2DM channels, including narrow-bandgap 2DMs, 2D topological semimetals, 2D charge density wave compounds, and 2D heterojunctions. Then, we introduce defect-engineered 2DM BBPDs, including vacancy engineering, heteroatom incorporation, and interfacial engineering. Subsequently, we summarize 2DM based mixed-dimensional (0D-2D, 1D-2D, 2D-3D, and 0D-2D-3D) BBPDs. Finally, we provide several viewpoints for the future development of this burgeoning field.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
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Thangaraju D, Marnadu R, Santhana V, Durairajan A, Kathirvel P, Chandrasekaran J, Jayakumar S, Valente MA, Greenidge DC. Solvent influenced synthesis of single-phase SnS2 nanosheets for solution-processed photodiode fabrication. CrystEngComm 2020. [DOI: 10.1039/c9ce01417a] [Citation(s) in RCA: 32] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The effect of variant high boiling point solvent combinations in the synthesis and photo-sensing characteristics of tin disulfide (SnS2) thin nanosheets were investigated.
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Affiliation(s)
- D. Thangaraju
- nano-crystal Design and Application Lab (n-DAL)
- Department of Physics
- PSG Institute of Technology and Applied Research
- Coimbatore-641062
- India
| | - R. Marnadu
- Department of Physics
- Sri Ramakrishna Mission Vidyalaya College of Arts and Science
- Coimbatore 641 020
- India
| | - V. Santhana
- nano-crystal Design and Application Lab (n-DAL)
- Department of Physics
- PSG Institute of Technology and Applied Research
- Coimbatore-641062
- India
| | - A. Durairajan
- I3NAveiro
- Department of Physics
- University of Aveiro
- 3810 193 Aveiro
- Portugal
| | - P. Kathirvel
- Department of Physics
- PSG College of Technology
- Coimbatore-641004
- India
| | - J. Chandrasekaran
- Department of Physics
- Sri Ramakrishna Mission Vidyalaya College of Arts and Science
- Coimbatore 641 020
- India
| | - S. Jayakumar
- nano-crystal Design and Application Lab (n-DAL)
- Department of Physics
- PSG Institute of Technology and Applied Research
- Coimbatore-641062
- India
| | - M. A. Valente
- I3NAveiro
- Department of Physics
- University of Aveiro
- 3810 193 Aveiro
- Portugal
| | - Darius C. Greenidge
- Shizuoka University
- Office of the Special Advisor to the President
- International Affairs (Geologist/Mineralogist)
- Shizuoka
- Japan
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28
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Gao W, Zheng Z, Huang L, Yao J, Zhao Y, Xiao Y, Li J. Self-Powered SnS 1-xSe x Alloy/Silicon Heterojunction Photodetectors with High Sensitivity in a Wide Spectral Range. ACS APPLIED MATERIALS & INTERFACES 2019; 11:40222-40231. [PMID: 31601094 DOI: 10.1021/acsami.9b12276] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Alloy engineering and heterostructures designing are two efficient methods to improve the photosensitivity of two-dimensional (2D) material-based photodetectors. Herein, we report the first-principle calculation about the band structure of SnS1-xSex (0 ≤ x ≤ 1) and synthesize these alloy nanosheets. Systematic measurements indicate that SnS0.25Se0.75 exhibits the highest hole mobility (0.77 cm2·V-1·s-1) and a moderate photoresponsivity (4.44 × 102 A·W-1) with fast response speed (32.1/57.5 ms) under 635 nm irradiation. Furthermore, to reduce the dark current and strengthen the light absorption, a self-driven SnS0.25Se0.75/n-Si device has been fabricated. The device achieved a preeminent photo-responsivity of 377 mA·W-1, a detectivity of ∼1011 Jones and Ilight/Idark ratio of ∼4.5 × 102. In addition, the corresponding rising/decay times are as short as 4.7/3.9 ms. Moreover, a broadband sensitivity from 635 to 1200 nm is obtained and the related photoswitching curves are stable and reproducibility. Noticeably, the above parameters are comparable or superior to the most of reported group IVA layered materials-based self-driven photodetectors. Last, the synergistic effects between the SnS0.25Se0.75 nanosheets and the n-Si have been discussed by the band alignment. These brilliant results will pave a new pathway for the development of next generation 2D alloy-based photoelectronic devices.
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Affiliation(s)
- Wei Gao
- School of Materials and Energy , Guangdong University of Technology , Guangzhou 510006 , P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy , Guangdong University of Technology , Guangzhou 510006 , P. R. China
- Department of Electronic Engineering , The Chinese University of Hong Kong , Hong Kong SAR , P. R. China
| | - Le Huang
- School of Materials and Energy , Guangdong University of Technology , Guangzhou 510006 , P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering , Sun Yat-Sen University , Guangzhou 510275 , Guangdong , P. R. China
| | - Yu Zhao
- School of Materials and Energy , Guangdong University of Technology , Guangzhou 510006 , P. R. China
| | - Ye Xiao
- School of Materials and Energy , Guangdong University of Technology , Guangzhou 510006 , P. R. China
| | - Jingbo Li
- State Key Laboratory of Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , P. R. China
- Institute of Semiconductors , South China Normal University , Guangzhou 510631 , P. R. China
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Mo H, Zhang X, Liu Y, Kang P, Nan H, Gu X, Ostrikov KK, Xiao S. Two-Dimensional Alloying Molybdenum Tin Disulfide Monolayers with Fast Photoresponse. ACS APPLIED MATERIALS & INTERFACES 2019; 11:39077-39087. [PMID: 31573789 DOI: 10.1021/acsami.9b13645] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Elemental alloying in monolayer, two-dimensional (2D) transition metal dichalcogenides (TMDs) promises unprecedented ability to modulate their electronic structure leading to unique optoelectronic properties. MoS2 monolayer based photodetectors typically exhibit a high photoresponsivity but suffer from a low response time. Here we develop a new approach for Sn alloying in MoS2 monolayers based on the synergy of the customized chemical vapor deposition (CVD) and the effects of common salt (NaCl) to produce high-quality and large-size Mo1-xSnxS2 (x < 0.5) alloy monolayers. The composition difference results in different growth behaviors; Mo dominated alloys (x < 0.5) exhibit uniform and large size (up to 100 μm) triangular monolayers, while Sn-dominated alloys (x > 0.5) present multilayer grains. The Mo1-xSnxS2 (x < 0.5) based photodetectors and phototransistors exhibit a maximum responsitivity of 12 mA/W and a minimum response time of 20 ms, which is faster than most reported MoS2-based photodetectors. This work offers new perspectives for precision 2D alloy engineering to improve the optoelectronic performance of TMD-based photodetectors.
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Affiliation(s)
| | | | - Yuan Liu
- Wuxi Branch of Jiangsu Province Special Equipment Safety Supervision and Inspection Institute , Wuxi 214174 , China
| | | | | | | | - Kostya Ken Ostrikov
- School of Chemistry, Physics and Mechanical Engineering and Institute for Future Environments , Queensland University of Technology , Brisbane , QLD 4000 , Australia
- CSIRO-QUT Joint Sustainable Processes and Devices Laboratory , P. O. Box 218, Lindfield , NSW 2070 , Australia
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30
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Yin J, Cong L, Liu Y, Wang P, Ma W, Zhu JL, Jiang K, Zhang W, Sun JL. Superionic Modulation of Polymethylmethacrylate-Assisted Suspended Few-Layer Graphene Nanocomposites for High-Performance Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2019; 11:7600-7606. [PMID: 30698004 DOI: 10.1021/acsami.8b21055] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Graphene is receiving significant attention for use in optoelectronic devices because it exhibits a wide range of desirable electrical properties. Although modified graphene that is fabricated on quantum dots (or similar integration strategies) has shown promise, it has not met the requirements for high-speed applications and highly sensitive detection. Herein, we report ion-modulated graphene composite nanostructures that were incorporated into photodetectors. We focus on the dynamical properties of the novel photodetectors, and they exhibit extraordinary photoelectric performances (photoresponsivity ∼1 A/W, response time ∼100 μs) over a broad range of wavelengths from 405 to 1064 nm (the maximum external quantum efficiency is greater than 300% at 635 nm with a 10 kHz chopping frequency). A theoretical model is proposed in this paper, and it is in good agreement with our experimental results. The dynamic analyses further confirmed the dissociation and recombination of ion-electron bound states to be responsible for the fast and sensitive photoresponse from the composite samples. Although ion-modulated optoelectronic nanomaterials are rarely studied, they require further exploration as they offer new insights and alternatives in nanomaterial research.
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Affiliation(s)
- Jun Yin
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , P. R. China
| | | | - Yu Liu
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , P. R. China
| | - Pengfei Wang
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , P. R. China
| | - Wanyun Ma
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , P. R. China
| | | | - Kaili Jiang
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , P. R. China
| | - Wei Zhang
- Institute of Applied Physics and Computational Mathematics , P. O. Box 8009 (28), Beijing 100088 , China
| | - Jia-Lin Sun
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , P. R. China
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Hassan MS, Bera S, Gupta D, Ray SK, Sapra S. MoSe 2-Cu 2S Vertical p-n Nanoheterostructures for High-Performance Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2019; 11:4074-4083. [PMID: 30624044 DOI: 10.1021/acsami.8b16205] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Heterostructures based on atomically thin two-dimensional layered transition metal dichalcogenides are highly promising for optoelectronic device applications owing to their tunable optical and electronic properties. However, the synthesis of heterostructures with desired materials having proper interfacial contacts has been a challenging task. Here, we develop a colloidal synthetic route for the design of MoSe2-Cu2S nanoheterostructures, where the Cu2S islands grow vertically on top of the defect sites present on the MoSe2 surface, thereby forming a vertical p-n junction having plasmonic characteristics. These MoSe2-Cu2S nanoheterostructures are used to fabricate photodetectors with superior photoresponse characteristics. The fabricated device exhibits a broad-band spectral photoresponse over the visible to near-infrared range with a peak responsivity of 410 mA W-1 at -2.0 V and over 3000-fold photo-to-dark current ratio. The superior device performance of MoSe2-Cu2S over only MoSe2 devices is due to the combined effect of the formation of the p-n junction, pronounced light-matter interactions, and passivation of surface defects. This study would pave the way for designing a new class of nanoheterostructured materials for their potential applications in next-generation photonic devices.
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Affiliation(s)
- Md Samim Hassan
- Department of Chemistry , Indian Institute of Technology Delhi , Hauz Khas, New Delhi 110016 , India
| | - Susnata Bera
- Department of Chemistry , Indian Institute of Technology Delhi , Hauz Khas, New Delhi 110016 , India
| | - Divya Gupta
- Department of Chemistry , Indian Institute of Technology Delhi , Hauz Khas, New Delhi 110016 , India
| | - Samit K Ray
- Department of Physics , Indian Institute of Technology Kharagpur , Kharagpur 721302 , West Bengal , India
- S. N. Bose National Centre for Basic Sciences , Kolkata 700106 , West Bengal , India
| | - Sameer Sapra
- Department of Chemistry , Indian Institute of Technology Delhi , Hauz Khas, New Delhi 110016 , India
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Du L, Wang C, Fang J, Wei B, Xiong W, Wang X, Ma L, Wang X, Wei Z, Xia C, Li J, Wang Z, Zhang X, Liu Q. A ternary SnS1.26Se0.76 alloy for flexible broadband photodetectors. RSC Adv 2019; 9:14352-14359. [PMID: 35519304 PMCID: PMC9064034 DOI: 10.1039/c9ra01734h] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/07/2019] [Accepted: 04/30/2019] [Indexed: 12/02/2022] Open
Abstract
Layered two-dimensional (2D) materials often display unique functionalities for flexible 2D optoelectronic device applications involving natural flexibility and tunable bandgap by bandgap engineering. Composition manipulation by alloying of these 2D materials represents an effective way in fulfilling bandgap engineering, which is particularly true for SnS2xSe2(1−x) alloys showing a continuous bandgap modulation from 2.1 eV for SnS2 to 1.0 eV for SnSe2. Here, we report that a ternary SnS1.26Se0.76 alloy nanosheet can serve as an efficient flexible photodetector, possessing excellent mechanical durability, reproducibility, and high photosensitivity. The photodetectors show a broad spectrum detection ranging from visible to near infrared (NIR) light. These findings demonstrate that the ternary SnS1.26Se0.76 alloy can act as a promising 2D material for flexible and wearable optoelectronic devices. Bandgap engineering of a ternary SnS1.26Se0.76 alloy for flexible broadband photodetectors.![]()
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Yu M, Li H, Liu H, Qin F, Gao F, Hu Y, Dai M, Wang L, Feng W, Hu P. Synthesis of Two-Dimensional Alloy Ga 0.84In 0.16Se Nanosheets for High-Performance Photodetector. ACS APPLIED MATERIALS & INTERFACES 2018; 10:43299-43304. [PMID: 30507146 DOI: 10.1021/acsami.8b15317] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The electronic and optoelectronic properties of 2D alloy Ga0.84In0.16Se were investigated for the first time. 2D Ga0.84In0.16Se FETs show p-type conduction behaviors. 2D Ga0.84In0.16Se photodetectors show high photoresponse in the visible light range of 500 to 700 nm. The responsivity value is 258 A/W for alloy photodetector (500 nm illumination), and it is 92 times and 20 times higher than those of 2D GaSe and InSe photodetectors, respectively. Moreover, the alloy photodetector exhibits good photoresponse stability and rapid photoresponse time. Our results demonstrate that 2D alloy Ga0.84In0.16Se has great potential for application in photodetection and sensor devices.
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Affiliation(s)
- Miaomiao Yu
- Department of Chemistry and Chemical Engineering, College of Science , Northeast Forestry University , Harbin , 150040 , China
| | - Hang Li
- Innovation Lab of Space Robot System, Space Robotics Engineering Center, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , Changchun 130033 , China
| | - He Liu
- Department of Chemistry and Chemical Engineering, College of Science , Northeast Forestry University , Harbin , 150040 , China
| | - Fanglu Qin
- Department of Chemistry and Chemical Engineering, College of Science , Northeast Forestry University , Harbin , 150040 , China
| | - Feng Gao
- Key Lab of Microsystem and Microstructure of Ministry of Education , Harbin Institute of Technology , Harbin 150080 , China
| | - Yunxia Hu
- Key Lab of Microsystem and Microstructure of Ministry of Education , Harbin Institute of Technology , Harbin 150080 , China
| | - Mingjin Dai
- Key Lab of Microsystem and Microstructure of Ministry of Education , Harbin Institute of Technology , Harbin 150080 , China
| | - Lifeng Wang
- Institute for Frontier Materials , Deakin University , 75 Pigdons Road , Waurn Ponds, Geelong, Victoria 3216 , Australia
| | - Wei Feng
- Department of Chemistry and Chemical Engineering, College of Science , Northeast Forestry University , Harbin , 150040 , China
| | - PingAn Hu
- Key Lab of Microsystem and Microstructure of Ministry of Education , Harbin Institute of Technology , Harbin 150080 , China
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Yao J, Zheng Z, Yang G. Ultrasensitive 2D/3D Heterojunction Multicolor Photodetectors: A Synergy of Laterally and Vertically Aligned 2D Layered Materials. ACS APPLIED MATERIALS & INTERFACES 2018; 10:38166-38172. [PMID: 30360099 DOI: 10.1021/acsami.8b10396] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
In this work, a p-type 2D SnS nanofilm containing both laterally and vertically aligned components was successfully deposited on an n-type Si substrate through pulsed-laser deposition. Energy band analysis demonstrates a typical type-II band alignment between SnS and Si, which is beneficial to the separation of photogenerated carriers. The as-fabricated p-SnS/n-Si heterojunction photodetector exhibits multicolor photoresponse from ultraviolet to near-infrared (370-1064 nm). Importantly, the device manifests a high responsivity of 273 A/W, a large external quantum efficiency of 4.2 × 104%, and an outstanding detectivity of 7× 1013 Jones (1 Jones = 1 cm Hz1/2 W-1), which far outperforms state-of-the-art 2D/3D heterojunction photodetectors incorporating either laterally or vertically aligned 2D layered materials (2DLMs). The splendid performance is ascribed to lateral SnS's dangling-bond-free interface induced efficient carrier separation, vertical SnS's high-speed carrier transport, and collision ionization induced carrier multiplication. In sum, the current work depicts a unique landscape for revolutionary design and advancement of 2DLM-based heterojunction photodetectors.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering , Sun Yat-sen University , Guangzhou 510275 , Guangdong , P. R. China
| | - Zhaoqiang Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering , Sun Yat-sen University , Guangzhou 510275 , Guangdong , P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering , Sun Yat-sen University , Guangzhou 510275 , Guangdong , P. R. China
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Thakar K, Mukherjee B, Grover S, Kaushik N, Deshmukh M, Lodha S. Multilayer ReS 2 Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications. ACS APPLIED MATERIALS & INTERFACES 2018; 10:36512-36522. [PMID: 30251824 DOI: 10.1021/acsami.8b11248] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Rhenium disulfide (ReS2) is an attractive candidate for photodetection applications owing to its thickness-independent direct band gap. Despite various photodetection studies using two-dimensional semiconductors, the trade-off between responsivity and response time under varying measurement conditions has not been studied in detail. This report presents a comprehensive study of the architectural, laser power and gate bias dependence of responsivity and speed in supported and suspended ReS2 phototransistors. Photocurrent scans show uniform photogeneration across the entire channel because of enhanced optical absorption and a direct band gap in multilayer ReS2. A high responsivity of 4 A W-1 (at 50 ms response time) and a low response time of 20 μs (at 4 mA W-1 responsivity) make this one of the fastest reported transition-metal dichalcogenide photodetectors. Occupancy of intrinsic (bulk ReS2) and extrinsic (ReS2/SiO2 interface) traps is modulated using gate bias to demonstrate tunability of the response time (responsivity) over 4 orders (15×) of magnitude, highlighting the versatility of these photodetectors. Differences in the trap distributions of suspended and supported channel architectures, and their occupancy under different gate biases enable switching the dominant operating mechanism between either photogating or photoconduction. Further, a new metric that captures intrinsic photodetector performance by including the trade-off between its responsivity and speed, besides normalizing for the applied bias and geometry, is proposed and benchmarked for this work.
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Affiliation(s)
- Kartikey Thakar
- Department of Electrical Engineering , Indian Institute of Technology Bombay , Mumbai , 400076 , India
| | - Bablu Mukherjee
- Department of Electrical Engineering , Indian Institute of Technology Bombay , Mumbai , 400076 , India
| | - Sameer Grover
- Department of Condensed Matter Physics and Materials Science , Tata Institute of Fundamental Research , Mumbai , 400005 , India
| | - Naveen Kaushik
- Department of Electrical Engineering , Indian Institute of Technology Bombay , Mumbai , 400076 , India
| | - Mandar Deshmukh
- Department of Condensed Matter Physics and Materials Science , Tata Institute of Fundamental Research , Mumbai , 400005 , India
| | - Saurabh Lodha
- Department of Electrical Engineering , Indian Institute of Technology Bombay , Mumbai , 400076 , India
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36
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Hoffman AN, Stanford MG, Zhang C, Ivanov IN, Oyedele AD, Sales MG, McDonnell SJ, Koehler MR, Mandrus DG, Liang L, Sumpter BG, Xiao K, Rack PD. Atmospheric and Long-term Aging Effects on the Electrical Properties of Variable Thickness WSe 2 Transistors. ACS APPLIED MATERIALS & INTERFACES 2018; 10:36540-36548. [PMID: 30256093 DOI: 10.1021/acsami.8b12545] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Atmospheric and long-term aging effects on electrical properties of WSe2 transistors with various thicknesses are examined. Although countless published studies report electrical properties of transition-metal dichalcogenide materials, many are not attentive to testing environment or to age of samples, which we have found significantly impacts results. Our as-fabricated exfoliated WSe2 pristine devices are predominantly n-type, which is attributed to selenium vacancies. Transfer characteristics of as-fabricated devices measured in air then vacuum reveal physisorbed atmospheric molecules significantly reduced n-type conduction in air. First-principles calculations suggest this short-term reversible atmospheric effect can be attributed primarily to physisorbed H2O on pristine WSe2, which is easily removed from the pristine surface in vacuum due to the low adsorption energy. Devices aged in air for over 300 h demonstrate irreversibly increased p-type conduction and decreased n-type conduction. Additionally, they develop an extended time constant for recovery of the atmospheric adsorbents effect. Short-term atmospheric aging (up to approximately 900 h) is attributed to O2 and H2O molecules physisorbed to selenium vacancies where electron transfer from the bulk and adsorbed binding energies are higher than the H2O-pristine WSe2. The residual/permanent aging component is attributed to electron trapping molecular O2 and isoelectronic O chemisorption at selenium vacancies, which also passivates the near-conduction band gap state, p-doping the material, with very high binding energy. All effects demonstrated have the expected thickness dependence, namely, thinner devices are more sensitive to atmospheric and long-term aging effects.
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Affiliation(s)
| | | | | | | | | | - Maria Gabriela Sales
- Department of Materials Science & Engineering , University of Virginia , Charlottesville , Virginia 22904 , United States
| | - Stephen J McDonnell
- Department of Materials Science & Engineering , University of Virginia , Charlottesville , Virginia 22904 , United States
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Kwon DK, Porte Y, Ko KY, Kim H, Myoung JM. High-Performance Flexible ZnO Nanorod UV/Gas Dual Sensors Using Ag Nanoparticle Templates. ACS APPLIED MATERIALS & INTERFACES 2018; 10:31505-31514. [PMID: 30133251 DOI: 10.1021/acsami.8b13046] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Flexible zinc oxide (ZnO) nanorod (NR) ultraviolet (UV)/gas dual sensors using silver (Ag) nanoparticle (NP) templates were successfully fabricated on a polyimide substrate with nickel electrodes. Arrays of Ag NPs were used as a template for the growth of ZnO NRs, which could enhance the flexibility and the sensing properties of the devices through the localized surface plasmon resonance (LSPR) effect. The Ag NPs were fabricated by the rapid thermal annealing process of Ag thin films, and ZnO NRs were grown on Ag NPs to maximize the surface area and form networks with rod-to-rod contacts. Because of the LSPR effect by Ag NPs, the UV photoresponse of the ZnO NRs was amplified and the depletion region of ZnO NRs was formed quickly because of the Schottky contact with the Ag NPs. As a consequence, ZnO NR UV/gas dual sensors grown on the Ag NP template with a diameter of 28 nm exhibited the outstanding UV-sensing characteristics with a UV on-off ratio of 3628 and a rising time ( tr) and a decay time ( td) of 3.52 and 0.33 s upon UV exposure, along with excellent NO2-sensing characteristics with a stable gas on-off ratio of 288.5 and a tr and td of 38 and 62 s upon NO2 exposure. Furthermore, the sensors grown on the Ag NP template exhibited good mechanical flexibility and stable sensing properties without significant degradation even after the bending test up to 10 000 cycles at the bending radius of 5 mm.
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38
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Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor. CRYSTALS 2018. [DOI: 10.3390/cryst8080316] [Citation(s) in RCA: 43] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
Abstract
Atomically thin molybdenum disulfide (MoS2), a member of the transition metal dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) semiconductor with a multitude of interesting properties and promising device applications spanning all realms of electronics and optoelectronics. While possessing inherent advantages over conventional bulk semiconducting materials (such as Si, Ge and III-Vs) in terms of enabling ultra-short channel and, thus, energy efficient field-effect transistors (FETs), the mechanically flexible and transparent nature of MoS2 makes it even more attractive for use in ubiquitous flexible and transparent electronic systems. However, before the fascinating properties of MoS2 can be effectively harnessed and put to good use in practical and commercial applications, several important technological roadblocks pertaining to its contact, doping and mobility (µ) engineering must be overcome. This paper reviews the important technologically relevant properties of semiconducting 2D TMDCs followed by a discussion of the performance projections of, and the major engineering challenges that confront, 2D MoS2-based devices. Finally, this review provides a comprehensive overview of the various engineering solutions employed, thus far, to address the all-important issues of contact resistance (RC), controllable and area-selective doping, and charge carrier mobility enhancement in these devices. Several key experimental and theoretical results are cited to supplement the discussions and provide further insight.
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Sun B, Sun Y, Wang C. Flexible Transparent and Free-Standing SiC Nanowires Fabric: Stretchable UV Absorber and Fast-Response UV-A Detector. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1703391. [PMID: 29383845 DOI: 10.1002/smll.201703391] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2017] [Revised: 11/25/2017] [Indexed: 06/07/2023]
Abstract
Transparent and flexible materials are desired for the construction of photoelectric multifunctional integrated devices and portable electronics. Herein, 2H-SiC nanowires are assembled into a flexible, transparent, self-standing nanowire fabric (FTS-NWsF). The as-synthesized ultralong nanowires form high-quality crystals with a few stacking faults. The optical transmission spectra reveal that FTS-NWsF absorbs most incident 200-400 nm light, but remains transparent to visible light. A polydimethylsiloxane (PDMS)-SiC fabric-PDMS sandwich film device exhibits stable electrical output even when repeatedly stretched by up to 50%. Unlike previous SiC nanowires in which stacking faults are prevalent, the transparent, stretchable SiC fabric shows considerable photoelectric activity and exhibits a rapid photoresponse (rise and decay time < 30 ms) to 340-400 nm light, covering most of the UV-A spectral region. These advances represent significant progress in the design of functional optoelectronic SiC nanowires and transparent and stretchable optoelectronic systems.
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Affiliation(s)
- Bo Sun
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, The Key Laboratory of Low-Carbon Chemistry and Energy Conservation of Guangdong Province, Sun Yat-sen (Zhongshan) University, Guangzhou, 510275, P. R. China
| | - Yong Sun
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, The Key Laboratory of Low-Carbon Chemistry and Energy Conservation of Guangdong Province, Sun Yat-sen (Zhongshan) University, Guangzhou, 510275, P. R. China
| | - Chengxin Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, The Key Laboratory of Low-Carbon Chemistry and Energy Conservation of Guangdong Province, Sun Yat-sen (Zhongshan) University, Guangzhou, 510275, P. R. China
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Yao J, Zheng Z, Yang G. Layered tin monoselenide as advanced photothermal conversion materials for efficient solar energy-driven water evaporation. NANOSCALE 2018; 10:2876-2886. [PMID: 29367961 DOI: 10.1039/c7nr09229f] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Solar energy-driven water evaporation lays a solid foundation for important photothermal applications such as sterilization, seawater desalination, and electricity generation. Due to the strong light-matter coupling, broad absorption wavelength range, and prominent quantum confinement effect, layered tin monoselenide (SnSe) holds a great potential to effectively harness solar irradiation and convert it to heat energy. In this study, SnSe is successfully deposited on a centimeter-scale nickel foam using a facile one-step pulsed-laser deposition approach. Importantly, the maximum evaporation rate of SnSe-coated nickel foam (SnSe@NF) reaches 0.85 kg m-2 h-1, which is even 21% larger than that obtained with the commercial super blue coating (0.7 kg m-2 h-1) under the same condition. A systematic analysis reveals that its good photothermal conversion capability is attributed to the synergetic effect of multi-scattering-induced light trapping and the optimal trade-off between light absorption and phonon emission. Finally, the SnSe@NF device is further used for seawater evaporation, demonstrating a comparable evaporation rate (0.8 kg m-2 h-1) to that of fresh water and good stability over many cycles of usage. In summary, the current contribution depicts a facile one-step scenario for the economical and efficient solar-enabled SnSe@NF evaporation devices. More importantly, an in-depth analysis of the photothermal conversion mechanism underneath the layered materials depicts a fundamental paradigm for the design and application of photothermal devices based on them in the future.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, School of Physics, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
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41
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Zheng Z, Yao J, Wang B, Yang Y, Yang G, Li J. Self-Assembly High-Performance UV-vis-NIR Broadband β-In 2Se 3/Si Photodetector Array for Weak Signal Detection. ACS APPLIED MATERIALS & INTERFACES 2017; 9:43830-43837. [PMID: 29192488 DOI: 10.1021/acsami.7b16329] [Citation(s) in RCA: 37] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The emergence of a rich variety of layered materials has attracted considerable attention in recent years because of their exciting properties. However, the applications of layered materials in optoelectronic devices are hampered by the low light absorption of monolayers/few layers, the lack of p-n junction, and the challenges for large-scale production. Here, we report a scalable production of β-In2Se3/Si heterojunction arrays using pulsed-laser deposition. Photodetectors based on the as-produced heterojunction array are sensitive to a broadband wavelength from ultraviolet (370 nm) to near-infrared (808 nm), showing a high responsivity (5.9 A/W), a decent current on/off ratio (∼600), and a superior detectivity (4.9 × 1012 jones), simultaneously. These figures-of-merits are among the best values of the reported heterojunction-based photodetectors. In addition, these devices can further enable the detection of weak signals, as successfully demonstrated with weak light sources including a flashlight, lighter, and fluorescent light. Device physics modeling shows that their high performance is attributed to the strong light absorption of the relatively thick β-In2Se3 film (20.3 nm) and the rational energy band structures of β-In2Se3 and Si, which allows efficient separation of photoexcited electron-hole pairs. These results offer a new insight into the rational design of optoelectronic devices from the synergetic effect of layered materials as well as mature semiconductor technology.
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Affiliation(s)
- Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology , Guangzhou, 510006 Guangdong, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University , Guangzhou, 510275 Guangdong, P. R. China
| | - Bing Wang
- Institute of Micro-Nano Optoelectronic Technology, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, College of Electronic Science and Technology, Shenzhen University , Shenzhen, 518060 Guangdong, P. R. China
| | - Yibin Yang
- School of Materials and Energy, Guangdong University of Technology , Guangzhou, 510006 Guangdong, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University , Guangzhou, 510275 Guangdong, P. R. China
| | - Jingbo Li
- School of Materials and Energy, Guangdong University of Technology , Guangzhou, 510006 Guangdong, P. R. China
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, P. R. China
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Yao JD, Zheng ZQ, Yang GW. Alloying-assisted phonon engineering of layered BiInSe 3@nickel foam for efficient solar-enabled water evaporation. NANOSCALE 2017; 9:16396-16403. [PMID: 29058001 DOI: 10.1039/c7nr04374k] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
The fresh water crisis has emerged as one of the most urgent bottlenecks hindering the rapid development of modern industry and society. Solar energy-driven water evaporation represents a potential green and sustainable solution to address this issue. Herein, for the first time, centimeter-scale BiInSe3-coated nickel foam (BiInSe3@NF) as an efficient solar-enabled evaporator was successfully achieved and exploited for solar energy-driven water evaporation. Benefitting from multiple scattering-induced light trapping of the rough substrate, strong light-matter interaction and intermediate band (IB)-induced efficient phonon emission of BiInSe3, the BiInSe3@NF device achieved a high evaporation rate of 0.83 kg m-2 h-1 under 1 sun irradiation, which is 2.5 times that of pure water. These figures-of-merit are superior to recently reported state-of-the-art photothermal conversion materials, such as black titania, plasmonic assembly and carbon black. In addition, superior stability over a period of 60 days was demonstrated. In summary, the current contribution depicts a facile scenario for design, production and application of an economical and efficient solar-enabled BiInSe3@NF evaporator. More importantly, the phonon engineering strategy based on alloying induced IB states can be readily applied to other analogous van der Waals materials and a series of superior vdWM alloys toward photothermal applications can be expected in the near future.
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Affiliation(s)
- J D Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, School of Physics, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
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Zheng Z, Yao J, Wang B, Yang G. A flexible, transparent and high-performance gas sensor based on layer-materials for wearable technology. NANOTECHNOLOGY 2017; 28:415501. [PMID: 28758899 DOI: 10.1088/1361-6528/aa8317] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Gas sensors play a vital role among a wide range of practical applications. Recently, propelled by the development of layered materials, gas sensors have gained much progress. However, the high operation temperature has restricted their further application. Herein, via a facile pulsed laser deposition (PLD) method, we demonstrate a flexible, transparent and high-performance gas sensor made of highly-crystalline indium selenide (In2Se3) film. Under UV-vis-NIR light or even solar energy activation, the constructed gas sensors exhibit superior properties for detecting acetylene (C2H2) gas at room temperature. We attribute these properties to the photo-induced charger transfer mechanism upon C2H2 molecule adsorption. Moreover, no apparent degradation in the device properties is observed even after 100 bending cycles. In addition, we can also fabricate this device on rigid substrates, which is also capable to detect gas molecules at room temperature. These results unambiguously distinguish In2Se3 as a new candidate for future application in monitoring C2H2 gas at room temperature and open up new opportunities for developing next generation full-spectrum activated gas sensors.
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Affiliation(s)
- Zhaoqiang Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, People's Republic of China
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