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Bauer S, Nergis B, Jin X, Horák L, Schneider R, Holý V, Seemann K, Baumbach T, Ulrich S. Relevance of Platinum Underlayer Crystal Quality for the Microstructure and Magnetic Properties of the Heterostructures YbFeO 3/Pt/YSZ(111). NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1041. [PMID: 38921917 PMCID: PMC11206664 DOI: 10.3390/nano14121041] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2024] [Revised: 06/07/2024] [Accepted: 06/13/2024] [Indexed: 06/27/2024]
Abstract
The hexagonal ferrite h-YbFeO3 grown on YSZ(111) by pulsed laser deposition is foreseen as a promising single multiferroic candidate where ferroelectricity and antiferromagnetism coexist for future applications at low temperatures. We studied in detail the microstructure as well as the temperature dependence of the magnetic properties of the devices by comparing the heterostructures grown directly on YSZ(111) (i.e., YbPt_Th0nm) with h-YbFeO3 films deposited on substrates buffered with platinum Pt/YSZ(111) and in dependence on the Pt underlayer film thickness (i.e., YbPt_Th10nm, YbPt_Th40nm, YbPt_Th55nm, and YbPt_Th70nm). The goal was to deeply understand the importance of the crystal quality and morphology of the Pt underlayer for the h-YbFeO3 layer crystal quality, surface morphology, and the resulting physical properties. We demonstrate the relevance of homogeneity, continuity, and hillock formation of the Pt layer for the h-YbFeO3 microstructure in terms of crystal structure, mosaicity, grain boundaries, and defect distribution. The findings of transmission electron microscopy and X-ray diffraction reciprocal space mapping characterization enable us to conclude that an optimum film thickness for the Pt bottom electrode is ThPt = 70 nm, which improves the crystal quality of h-YbFeO3 films grown on Pt-buffered YSZ(111) in comparison with h-YbFeO3 films grown on YSZ(111) (i.e., YbPt_Th0nm). The latter shows a disturbance in the crystal structure, in the up-and-down atomic arrangement of the ferroelectric domains, as well as in the Yb-Fe exchange interactions. Therefore, an enhancement in the remanent and in the total magnetization was obtained at low temperatures below 50 K for h-YbFeO3 films deposited on Pt-buffered substrates Pt/YSZ(111) when the Pt underlayer reached ThPt = 70 nm.
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Affiliation(s)
- Sondes Bauer
- Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
| | - Berkin Nergis
- Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
| | - Xiaowei Jin
- Laboratory for Electron Microscopy, Karlsruhe Institute of Technology, Engesserstr. 7, 76131 Karlsruhe, Germany
| | - Lukáš Horák
- Department of Condensed Matter Physics, Charles University, Ke Karlovu 5, 121 16 Prague, Czech Republic; (L.H.)
| | - Reinhard Schneider
- Laboratory for Electron Microscopy, Karlsruhe Institute of Technology, Engesserstr. 7, 76131 Karlsruhe, Germany
| | - Václav Holý
- Department of Condensed Matter Physics, Charles University, Ke Karlovu 5, 121 16 Prague, Czech Republic; (L.H.)
| | - Klaus Seemann
- Institute for Applied Materials, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany; (K.S.)
| | - Tilo Baumbach
- Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
- Laboratory for Applications of Synchrotron Radiation, Karlsruhe Institute of Technology, Kaiserstr. 12, 76131 Karlsruhe, Germany
| | - Sven Ulrich
- Institute for Applied Materials, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany; (K.S.)
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Li T, Deng S, Liu H, Chen J. Insights into Strain Engineering: From Ferroelectrics to Related Functional Materials and Beyond. Chem Rev 2024; 124:7045-7105. [PMID: 38754042 DOI: 10.1021/acs.chemrev.3c00767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
Ferroelectrics have become indispensable components in various application fields, including information processing, energy harvesting, and electromechanical conversion, owing to their unique ability to exhibit electrically or mechanically switchable polarization. The distinct polar noncentrosymmetric lattices of ferroelectrics make them highly responsive to specific crystal structures. Even slight changes in the lattice can alter the polarization configuration and response to external fields. In this regard, strain engineering has emerged as a prevalent regulation approach that not only offers a versatile platform for structural and performance optimization within ferroelectrics but also unlocks boundless potential in various functional materials. In this review, we systematically summarize the breakthroughs in ferroelectric-based functional materials achieved through strain engineering and progress in method development. We cover research activities ranging from fundamental attributes to wide-ranging applications and novel functionalities ranging from electromechanical transformation in sensors and actuators to tunable dielectric materials and information technologies, such as transistors and nonvolatile memories. Building upon these achievements, we also explore the endeavors to uncover the unprecedented properties through strain engineering in related chemical functionalities, such as ferromagnetism, multiferroicity, and photoelectricity. Finally, through discussions on the prospects and challenges associated with strain engineering in the materials, this review aims to stimulate the development of new methods for strain regulation and performance boosting in functional materials, transcending the boundaries of ferroelectrics.
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Affiliation(s)
- Tianyu Li
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Shiqing Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Hui Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun Chen
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Hainan University, Haikou 570228, China
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Singh A, Chauhan P, Verma A, Yadav BC. An investigation into the hybrid architecture of Mn-Co nanoferrites incorporated into a polyaniline matrix for photoresponse studies. Phys Chem Chem Phys 2023; 25:21383-21396. [PMID: 37530104 DOI: 10.1039/d3cp00024a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/03/2023]
Abstract
In this study, an enhanced photoresponse was observed in the Mn-Co Nanoferrites (MCFs)-Polyaniline (PANI) nanohybrid architecture due to the formation of interface between PANI and MCFs, which provided a conduction pathway for the movement of charge carriers, and these interfaces were observed in a high-resolution transmission electron micrograph (HR-TEM). X-ray photoelectron spectroscopy (XPS) suggests that the carbon (C 1s) of the MCF-PANI nanohybrid shows peaks at 287.80 eV for CO, 286.17 eV for C-O, 285.24 eV for C-N, 284.50 eV for the sp3 hybridized carbon (C-C/C-H) and 283.84 eV for the sp2 hybridized carbon (CC). Current-voltage (I-V) curves reveal an ohmic nature of the MCF-PANI nanohybrid photodetector device. The photoresponse measurements were analyzed using the trap depth concept, demonstrating that the conductive polymer increases the photoconduction mechanism efficiency of MCFs. The constructed photodetector device exhibits a high photoresponsivity of 22.69 A W-1, a remarkable detectivity of 1.36 × 1012 cm Hz1/2 W-1 and a fast rise/decay time of 0.7/0.8 s. The excellent performance of the as-fabricated photodetector device could be explained by the intimate interaction between MCFs and PANI at their interface.
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Affiliation(s)
- Anshika Singh
- Advanced Nanomaterials Research Laboratory, U.G.C. Centre of Advanced Studies, Department of Physics, University of Allahabad, Prayagraj-211002, UP, India.
| | - Pratima Chauhan
- Advanced Nanomaterials Research Laboratory, U.G.C. Centre of Advanced Studies, Department of Physics, University of Allahabad, Prayagraj-211002, UP, India.
| | - Arpit Verma
- Nanomaterials and Sensors Research Laboratory, Department of Physics, Babasaheb Bhimrao Ambedkar University, Lucknow-226025, UP, India
| | - B C Yadav
- Nanomaterials and Sensors Research Laboratory, Department of Physics, Babasaheb Bhimrao Ambedkar University, Lucknow-226025, UP, India
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Liu Y, Zhao Y, Liu R, Zhang J, Zhao S. Ferroelectric photovoltaic response engineered by lattice strain derived from local metal-ion dipoles. OPTICS LETTERS 2023; 48:1582-1585. [PMID: 37221715 DOI: 10.1364/ol.485829] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 02/17/2023] [Indexed: 05/25/2023]
Abstract
An unfavorable inverse relationship between polarization, bandgap, and leakage always limits the ferroelectric photovoltaic performances. This work proposes a strategy of lattice strain engineering different from traditional lattice distortion by introducing a (Mg2/3Nb1/3)3+ ion group into the B site of BiFeO3 films to construct local metal-ion dipoles. A giant remanent polarization of 98 µC/cm2, narrower bandgap of 2.56 eV, and the decreased leakage current by nearly two orders of magnitude are synchronously obtained in the BiFe0.94(Mg2/3Nb1/3)0.06O3 film by engineering the lattice strain, breaking through the inverse relationship among these three. Thereby, the open-circuit voltage and the short-circuit current of the photovoltaic effect reach as high as 1.05 V and 2.17 µA /cm2, respectively, showing an excellent photovoltaic response. This work provides an alternative strategy to enhance ferroelectric photovoltaic performances by lattice strain derived from local metal-ion dipoles.
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Liu MY, Yu JX, Zhu XL, Bian ZP, Zhou X, Liang YH, Luo ZL, Yin YW, Li JY, Chen XM. Hexagonal Lu 1-xIn xFeO 3 Room-Temperature Multiferroic Thin Films. ACS APPLIED MATERIALS & INTERFACES 2022; 14:52117-52123. [PMID: 36346358 DOI: 10.1021/acsami.2c11927] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The hexagonal rare earth ferrites h-RFeO3(R = rare earth element) have been recognized as promising candidates for a room-temperature multiferroic system, and the primary issue for these materials is how to get a stable hexagonal structure since the centrosymmetric orthorhombic structure is generally stable for most RFeO3 at room-temperature, while the hexagonal phase is only stable under some strict conditions. In the present work, h-Lu1-xInxFeO3 (x = 0-1) thin films were prepared on a Nb-SrTiO3 (111) single-crystal substrate by a pulsed laser deposition (PLD) process, and the multiferroic characterization was performed at room temperature. With the combined effects of chemical pressure and epitaxial strain, the stable hexagonal structure was achieved in a wide composition range (x = 0.5-0.7), and the results of XRD (X-ray diffraction) and SAED (selected area electron diffraction) indicate the super-cell match relations between the h-Lu0.3In0.7FeO3 thin film and substrate. The saturated P-E hysteresis loop was obtained at room temperature with a remanent polarization of about 4.3 μC/cm2, and polarization switching was also confirmed by PFM measurement. Furthermore, a strong magnetoelectric coupling with a linear magnetoelectric coefficient of 1.9 V/cm Oe was determined, which was about three orders of magnitude larger than that of h-RFeO3 ceramics. The present results indicate that the h-Lu1-xInxFeO3 thin films are expected to have great application potential for magnetoelectric memory and detection devices.
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Affiliation(s)
- Mei Ying Liu
- School of Materials Science and Engineering, Zhejiang University, Hangzhou310027, China
| | - Jun Xi Yu
- Institute for Advanced Study, Chengdu University, Chengdu610100, China
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Shenzhen518055, China
| | - Xiao Li Zhu
- School of Materials Science and Engineering, Zhejiang University, Hangzhou310027, China
| | - Zhi Ping Bian
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230029, China
| | - Xiang Zhou
- Hefei National Research Center for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei230029, China
| | - Yu Hang Liang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen518055, China
| | - Zhen Lin Luo
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230029, China
| | - Yue Wei Yin
- Hefei National Research Center for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei230029, China
| | - Jiang Yu Li
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen518055, China
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Shenzhen518055, China
| | - Xiang Ming Chen
- School of Materials Science and Engineering, Zhejiang University, Hangzhou310027, China
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Wu J, Wu T. A Bright New World of Ferroelectrics: Magic of Spontaneous Polarization. ACS APPLIED MATERIALS & INTERFACES 2020; 12:52231-52233. [PMID: 33238359 DOI: 10.1021/acsami.0c18276] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
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7
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Polat O, Coskun M, Efeoglu H, Caglar M, Coskun FM, Caglar Y, Turut A. The temperature induced current transport characteristics in the orthoferrite YbFeO 3-δthin film/p-type Si structure. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 33:035704. [PMID: 33108346 DOI: 10.1088/1361-648x/abba69] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2020] [Accepted: 09/21/2020] [Indexed: 06/11/2023]
Abstract
The perovskite ytterbium ferrite is a new ferroelectric semiconductor material. We presented the temperature induced current-voltage (I-V) characteristics of the Al/YbFeO3-δ/p-Si/Al hetero-junction. The orthoferrite YbFeO3-δthin films were deposited on a single crystal p-type Si substrate by a radio frequency magnetron sputtering system. The potential barrier height (BH)and ideality factornof the heterojunction were obtained by thermionic emission current method based on the recommendations in the literature. The fact that the calculated slopes ofI-Vcurves become temperature independent implying that the field emission current mechanism takes place across the device, which has been explained by the presence of the spatial inhomogeneity of BHs or potential fluctuations. Moreover, a tunneling transmission coefficient value of 26.67 was obtained for the ferroelectric YbFeO3-δlayer at the Al/p-Si interface.
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Affiliation(s)
- O Polat
- CEITEC BUT, Brno University of Technology, Purkyňova 123, 612 00 Brno, Czech Republic
- Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno, Czech Republic
| | - M Coskun
- Faculty of Engineering and Natural Sciences, Department of Engineering Physics, Istanbul Medeniyet University, 34700 Uskudar, Istanbul, Turkey
| | - H Efeoglu
- Faculty of Engineering, Department of Electrical and Electronics Engineering, Atatürk University, TR-25240 Erzurum, Turkey
| | - M Caglar
- Faculty of Science, Department of Physics, Eskisehir Technical University, Yunusemre Campus, 26470 Eskisehir, Turkey
| | - F M Coskun
- Faculty of Engineering and Natural Sciences, Department of Engineering Physics, Istanbul Medeniyet University, 34700 Uskudar, Istanbul, Turkey
| | - Y Caglar
- Faculty of Science, Department of Physics, Eskisehir Technical University, Yunusemre Campus, 26470 Eskisehir, Turkey
| | - A Turut
- Faculty of Engineering and Natural Sciences, Department of Engineering Physics, Istanbul Medeniyet University, 34700 Uskudar, Istanbul, Turkey
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8
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Lorenzi B, Tsurimaki Y, Kobayashi A, Takashiri M, Boriskina SV. Self-powered broadband photo-detection and persistent energy generation with junction-free strained Bi 2Te 3 thin films. OPTICS EXPRESS 2020; 28:27644-27656. [PMID: 32988054 DOI: 10.1364/oe.399040] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2020] [Accepted: 08/20/2020] [Indexed: 06/11/2023]
Abstract
We experimentally demonstrate efficient broadband self-powered photo-detection and power generation in thin films of polycrystalline bismuth telluride (Bi2Te3) semiconductors under inhomogeneous strain. The developed simple, junction-free, lightweight, and flexible photo-detectors are composed of a thin active layer and Ohmic contacts on a flexible plastic substrate, and can operate at room temperature and without application of an external bias voltage. We attribute the observed phenomena to the generation of an electric field due to a spontaneous polarization produced by strain gradient, which can separate both photo-generated and thermally-generated charge carriers in bulk of the semiconductor material, without a semiconductor junction. We show that the developed photo-detectors can generate electric power during both the daytime and the nighttime, by either harnessing solar and thermal radiation or by emitting thermal radiation into the cold sky. To the best of our knowledge, this is the first demonstration of the power generation in a simple junction-free device under negative illumination, which exhibits higher voltage than the previously used expensive commercial HgCdTe photo-diode. Significant improvements in the photo-detector performance are expected if the low-charge-mobility polycrystalline active layer is replaced with high-quality single-crystal material. The technology is not limited to Bi2Te3 as the active material, and offers many potential applications in night vision, wearable sensors, long-range LIDAR, and daytime/nighttime energy generation technologies.
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Ran X, Hou P, Song J, Song H, Zhong X, Wang J. Negative differential resistance effect in resistive switching devices based on h-LuFeO 3/CoFe 2O 4 heterojunctions. Phys Chem Chem Phys 2020; 22:5819-5825. [PMID: 32107521 DOI: 10.1039/d0cp00530d] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The negative differential resistance (NDR) effect enables multilevel storage and gradual resistance modulation in resistive switching (RS) devices to be achieved. However, the poor reproducibility of NDR is the obstacle that restricts their application because the appearance of the NDR effect in RS devices is usually accidental or unstable at room temperature. In this report, we demonstrate a polarization and interfacial defect modulated NDR effect in h-LuFeO3/CoFe2O4 heterojunction-based RS devices; especially, the NDR is reproducible after hundreds of cycles at room temperature. This research provides an effective way for realizing the reproducible NDR effect in ferroelectric RS devices, and it may promote the development and application of RS devices with the NDR effect.
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Affiliation(s)
- Xinxin Ran
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China.
| | - Pengfei Hou
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China. and Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, Guangzhou 510610, Guangdong, China
| | - Jiaxun Song
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China.
| | - Hongjia Song
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China.
| | - Xiangli Zhong
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China.
| | - Jinbin Wang
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China.
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Singh S, Sangle AL, Wu T, Khare N, MacManus-Driscoll JL. Growth of Doped SrTiO 3 Ferroelectric Nanoporous Thin Films and Tuning of Photoelectrochemical Properties with Switchable Ferroelectric Polarization. ACS APPLIED MATERIALS & INTERFACES 2019; 11:45683-45691. [PMID: 31710804 DOI: 10.1021/acsami.9b15317] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2023]
Abstract
Ferroelectric polarization is an intriguing physical phenomenon for tuning charge-transport properties and finds application in a wide range of optoelectronic devices. So far, ferroelectric materials in a planar geometry or chemically grown nanostructures have been used. However, these structural architectures possess serious disadvantages such as small surface areas and structural defects, respectively, leading to reduced performance. Herein, the growth of room-temperature ferroelectric nanoporous/nanocolumnar structure of Ag,Nb-codoped SrTiO3 (Ag/Nb:STO) using pulsed laser deposition is reported and demonstrated to have enhanced photoelectrochemical (PEC) properties using ferroelectric polarization. By manipulating the external electrical bias, ∼3-fold enhancement in the photocurrent from 40 to 130 μA·cm-2 of film area is obtained. Concurrently, the flat-band potential is decreased from -0.55 to -1.13 V, revealing a giant ferroelectric tuning of the band alignment at the semiconductor surface and enhanced charge transfer. In addition, an electrochemical impedance spectroscopy study confirmed the tuning of the charge transfer with ferroelectric polarization. Our nanoporous ferroelectric-semiconductor approach offers a new platform with great potential for achieving highly efficient PEC devices for renewable energy applications.
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Affiliation(s)
- Simrjit Singh
- School of Materials Science and Engineering , University of New South Wales , Sydney , New South Wales 2052 , Australia
- Department of Physics , Indian Institute of Technology Delhi , Hauz Khas , New Delhi 110016 , India
| | - Abhijeet Laxman Sangle
- Department of Materials Science and Metallurgy , University of Cambridge , Cambridge CB3 0FS , United Kingdom
| | - Tom Wu
- School of Materials Science and Engineering , University of New South Wales , Sydney , New South Wales 2052 , Australia
| | - Neeraj Khare
- Department of Physics , Indian Institute of Technology Delhi , Hauz Khas , New Delhi 110016 , India
| | - Judith L MacManus-Driscoll
- Department of Materials Science and Metallurgy , University of Cambridge , Cambridge CB3 0FS , United Kingdom
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Choi HJ, Jang W, Kim YE, Soon A, Cho YS. Stretching-Driven Crystal Anisotropy and Optical Modulations of Flexible Wide Band Gap Inorganic Thin Films. ACS APPLIED MATERIALS & INTERFACES 2019; 11:41516-41522. [PMID: 31612706 DOI: 10.1021/acsami.9b14274] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Strain engineering has been extensively explored for tailoring the material properties and, in turn, improving the device performance of semiconducting thin films. In particular, the effects of strain on the optical properties of these films have attracted considerable research interest, but experimental demonstrations in flexible systems have rarely been reported. Here, we exploited the variable optical properties of flexible ZnS thin films by imposing a controllable external compressive stress during a stretching-driven deposition process. This stress induced crystal anisotropy with an increase in tetragonality, which differs from that of the unstrained cubic ZnS thin films. The refractive index of the films was estimated by means of an envelope method using interference fringes. As a result, the reductions in the refractive index and optical band gap were observed by applying the stretching-driven strains with the resultant compressive stress. The modulated refractive index and its dispersion behavior were further investigated by employing a single-oscillator model to drive subsequent correlative parameters such as dispersion energy, oscillating strength, and high-frequency permittivity. As a proof of concept, an optical lens of ZnS was designed to confirm the effect of in situ stress-mediated optical modulation by detecting the variable focal length with stress.
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Affiliation(s)
- Hong Je Choi
- Department of Materials Science and Engineering , Yonsei University , Seoul 03722 , Korea
| | - Woosun Jang
- Department of Materials Science and Engineering , Yonsei University , Seoul 03722 , Korea
| | - Young Eun Kim
- Department of Materials Science and Engineering , Yonsei University , Seoul 03722 , Korea
| | - Aloysius Soon
- Department of Materials Science and Engineering , Yonsei University , Seoul 03722 , Korea
| | - Yong Soo Cho
- Department of Materials Science and Engineering , Yonsei University , Seoul 03722 , Korea
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Lu C, Wu M, Lin L, Liu JM. Single-phase multiferroics: new materials, phenomena, and physics. Natl Sci Rev 2019; 6:653-668. [PMID: 34691921 PMCID: PMC8291614 DOI: 10.1093/nsr/nwz091] [Citation(s) in RCA: 40] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/09/2019] [Revised: 06/15/2019] [Accepted: 06/20/2019] [Indexed: 12/23/2022] Open
Abstract
Multiferroics, where multiple ferroic orders coexist and are intimately coupled, promise novel applications in conceptually new devices on one hand, and on the other hand provide fascinating physics that is distinctly different from the physics of high-TC superconductors and colossal magnetoresistance manganites. In this mini-review, we highlight the recent progress of single-phase multiferroics in the exploration of new materials, efficient roadmaps for functionality enhancement, new phenomena beyond magnetoelectric coupling, and underlying novel physics. In the meantime, a slightly more detailed description is given of several multiferroics with ferrimagnetic orders and double-layered perovskite structure and also of recently emerging 2D multiferroics. Some emergent phenomena such as topological vortex domain structure, non-reciprocal response, and hybrid mechanisms for multiferroicity engineering and magnetoelectric coupling in various types of multiferroics will be briefly reviewed.
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Affiliation(s)
- Chengliang Lu
- School of Physics & Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Menghao Wu
- School of Physics & Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Lin Lin
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
| | - Jun-Ming Liu
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
- Institute for Advanced Materials, Hubei Normal University, Huangshi 435002, China
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Yang T, Wei J, Guo Y, Lv Z, Xu Z, Cheng Z. Manipulation of Oxygen Vacancy for High Photovoltaic Output in Bismuth Ferrite Films. ACS APPLIED MATERIALS & INTERFACES 2019; 11:23372-23381. [PMID: 31252505 DOI: 10.1021/acsami.9b06704] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Very recently, the ferroelectric photovoltaic property of bismuth ferrite (BiFeO3, BFO) has attracted much attention. However, the physical mechanisms for its anomalous photovoltaic effect and switchable photovoltaic effect are still largely unclear. Herein, a novel design was proposed to realize a high photovoltaic output in BiFeO3 films by manipulating its oxygen vacancy concentration through the alteration of the Bi content. Subsequent results and analysis manifested that the highest photovoltaic output was achieved in Bi1.05FeO3 films, differing 1000 times from that of Bi0.95FeO3 films. Simultaneously, the origin of photovoltaic effect in all BiFeO3 films was suggested as the bulk photovoltaic mechanism instead of the Schottky effect. Moreover, oxygen vacancy migration should be the dominant factor determining the switchable photovoltaic effect rather than the ferroelectric polarization. A switchable Schottky-to-Ohmic interfacial contact model was proposed to illustrate the observed switchable photovoltaic or diodelike effect. Therefore, the present work may open a new way to realize the high power output and controllable photovoltaic switching behavior for the photovoltaic applications of BiFeO3 compounds.
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Affiliation(s)
- Tiantian Yang
- Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering , Xi'an Jiaotong University , Xi'an 710049 , P.R. China
| | - Jie Wei
- Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering , Xi'an Jiaotong University , Xi'an 710049 , P.R. China
| | - Yaxin Guo
- Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering , Xi'an Jiaotong University , Xi'an 710049 , P.R. China
| | - Zhibin Lv
- Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering , Xi'an Jiaotong University , Xi'an 710049 , P.R. China
| | - Zhuo Xu
- Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering , Xi'an Jiaotong University , Xi'an 710049 , P.R. China
| | - Zhenxiang Cheng
- Institute for Superconducting and Electronic Materials (ISEM) , University of Wollongong , Innovation Campus, Squires Way , North Wollongong , NSW 2500 , Australia
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14
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Han H, Park J, Nam SY, Kim KJ, Choi GM, Parkin SSP, Jang HM, Irvine JTS. Lattice strain-enhanced exsolution of nanoparticles in thin films. Nat Commun 2019; 10:1471. [PMID: 30931928 PMCID: PMC6443801 DOI: 10.1038/s41467-019-09395-4] [Citation(s) in RCA: 56] [Impact Index Per Article: 11.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/14/2018] [Accepted: 03/08/2019] [Indexed: 11/30/2022] Open
Abstract
Nanoparticles formed on oxide surfaces are of key importance in many fields such as catalysis and renewable energy. Here, we control B-site exsolution via lattice strain to achieve a high degree of exsolution of nanoparticles in perovskite thin films: more than 1100 particles μm−2 with a particle size as small as ~5 nm can be achieved via strain control. Compressive-strained films show a larger number of exsolved particles as compared with tensile-strained films. Moreover, the strain-enhanced in situ growth of nanoparticles offers high thermal stability and coking resistance, a low reduction temperature (550 °C), rapid release of particles, and wide tunability. The mechanism of lattice strain-enhanced exsolution is illuminated by thermodynamic and kinetic aspects, emphasizing the unique role of the misfit-strain relaxation energy. This study provides critical insights not only into the design of new forms of nanostructures but also to applications ranging from catalysis, energy conversion/storage, nano-composites, nano-magnetism, to nano-optics. Dispersion of metallic nanoparticles is promising for energy conversion and storage, but gaining control of size and distribution is not trivial. Here the authors use lattice mismatch to manipulate exsolution of nanoparticles, achieving a high population of small nanoparticles in perovskite thin films.
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Affiliation(s)
- Hyeon Han
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea.,Max Planck Institute of Microstructure Physics, Weinberg 2, Halle (Saale), 06120, Germany
| | - Jucheol Park
- Gyeongbuk Science & Technology Promotion Center, Gumi Electronics & Information Technology Research Institute, Gumi, 39171, Republic of Korea
| | - Sang Yeol Nam
- Gyeongbuk Science & Technology Promotion Center, Gumi Electronics & Information Technology Research Institute, Gumi, 39171, Republic of Korea.,Department of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
| | - Kun Joong Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea.,Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Gyeong Man Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea.,1Fcell Inc., Pohang, 37673, Republic of Korea
| | - Stuart S P Parkin
- Max Planck Institute of Microstructure Physics, Weinberg 2, Halle (Saale), 06120, Germany.
| | - Hyun Myung Jang
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea. .,Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.
| | - John T S Irvine
- School of Chemistry, University of St Andrews, St Andrews, KY16 9ST, Scotland, UK.
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15
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Han H, Kim D, Chae S, Park J, Nam SY, Choi M, Yong K, Kim HJ, Son J, Jang HM. Switchable ferroelectric photovoltaic effects in epitaxial h-RFeO 3 thin films. NANOSCALE 2018; 10:13261-13269. [PMID: 29971282 DOI: 10.1039/c7nr08666k] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Ferroelectric photovoltaics (FPVs) have drawn much attention owing to their high stability, environmental safety, and anomalously high photovoltages, coupled with reversibly switchable photovoltaic responses. However, FPVs suffer from extremely low photocurrents, which is primarily due to their wide band gaps. Here, we present a new class of FPVs by demonstrating switchable ferroelectric photovoltaic effects and narrow band-gap properties using hexagonal ferrite (h-RFeO3) thin films, where R denotes rare-earth ions. FPVs with narrow band gaps suggest their potential applicability as photovoltaic and optoelectronic devices. The h-RFeO3 films further exhibit reasonably large ferroelectric polarizations (4.7-8.5 μC cm-2), which possibly reduces a rapid recombination rate of the photo-generated electron-hole pairs. The power conversion efficiency (PCE) of h-RFeO3 thin-film devices is sensitive to the magnitude of polarization. In the case of the h-TmFeO3 (h-TFO) thin film, the measured PCE is twice as large as that of the BiFeO3 thin film, a prototypic FPV. The effect of electrical fatigue on FPV responses has been further investigated. This work thus demonstrates a new class of FPVs towards high-efficiency solar cell and optoelectronic applications.
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Affiliation(s)
- Hyeon Han
- Department of Materials Science and Engineering, and Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
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