Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal

PbS Quantum Dots Ink with Months-Long Shelf-Lifetime Enabling Scalable and Efficient Short-Wavelength Infrared Photodetectors

The phase-transfer ligand exchange of PbS quantum dots (QDs) has substantially simplified device fabrication giving hope for future industrial exploitation. However, this technique when applied to QDs of large size (>4 nm) gives rise to inks with poor colloidal stability, thus hindering the development of QDs photodetectors in short-wavelength infrared range. Here, it is demonstrated that methylammonium lead iodide ligands can provide sufficient passivation of PbS QDs of size up to 6.7 nm, enabling inks with a minimum of ten-week shelf-life time, as proven by optical absorption and solution-small angle X-ray scattering. Furthermore, the maximum linear electron mobility of 4.7 × 10-2 cm2 V-1 s-1 is measured in field-effect transistors fabricated with fresh inks, while transistors fabricated with the same solution after ten-week storage retain 74% of the average starting electron mobility, demonstrating the outstanding quality both of the fresh and aged inks. Finally, photodetectors fabricated via blade-coating exhibit 76% external quantum efficiency at 1300 nm and 1.8 × 1012 Jones specific detectivity, values comparable with devices fabricated using ink with lower stability and wasteful methods such as spin-coating.

Temperature-Controlled Reversible Formation and Phase Transformation of 3D Nanocrystal Superlattices Through In Situ Small-Angle X-ray Scattering

For decades, the spontaneous organization of nanocrystals into superlattices has captivated the scientific community. However, achieving direct control over the formation of the superlattice and its phase transformations has proven to be a grand challenge, often resulting in the generation of multiple symmetries under the same experimental conditions. Here, we achieve direct control over the formation of the superlattice and its phase transformations by modulating the thermal energy of a nanocrystal dispersion without relying on solvent evaporation. We follow the temperature-dependent dynamics of the self-assembly process using synchrotron-based small-angle X-ray scattering. When cooled below -24.5 °C, lead sulfide nanocrystals form micrometer-sized three-dimensional phase-pure body-centered cubic superlattices. When cooled below -35.1 °C, these superlattices undergo a collective diffusionless phase transformation that yields denser body-centered tetragonal phases. These structural changes can be reversed by increasing the temperature of the dispersion and may lead to the direct modulation of the optical properties of these artificial solids.

Approaching Bulk Mobility in PbSe Colloidal Quantum Dots 3D Superlattices

3D superlattices made of colloidal quantum dots are a promising candidate for the next generation of optoelectronic devices as they are expected to exhibit a unique combination of tunable optical properties and coherent electrical transport through minibands. While most of the previous work was performed on 2D arrays, the control over the formation of these systems is lacking, where limited long-range order and energetical disorder have so far hindered the potential of these metamaterials, giving rise to disappointing transport properties. Here, it is reported that nanoscale-level controlled ordering of colloidal quantum dots in 3D and over large areas allows the achievement of outstanding transport properties. The measured electron mobilities are the highest ever reported for a self-assembled solid of fully quantum-confined objects. This ultimately demonstrates that optoelectronic metamaterials with highly tunable optical properties (in this case in the short-wavelength infrared spectral range) and charge mobilities approaching that of bulk semiconductor can be obtained. This finding paves the way toward a new generation of optoelectronic devices.

Study on the Aqueous CdTe Quantum Dots Solar Device Deposited by Blade Coating on Magnesium Zinc Oxide Window Layer

Aqueous CdTe quantum dots solar cells have been successfully fabricated by the blade coating method on the magnesium zinc oxide (Zn_1−xMg_xO or ZMO) window layer. Compared with the ZMO mono-window layer, the ZMO/CdS bi-window layer can decrease the interface recombination effectively due to the lower lattice mismatch and fast interdiffusion between CdS and CdTe. Moreover, the high temperature annealing of the CdTe quantum dots absorbed layer passivates the grain boundary of the CdTe crystalline via the replacement reaction of tellurium with sulfur. Finally, the conversion efficiency of our aqueous CdTe quantum dots solar device is improved from 3.21% to 8.06% with the introduction of the CdS interlayer and high temperature CdCl₂ annealing. Our aqueous CdTe quantum dots solar devices show a large open circuit voltage and fill factor which are comparable with the conventional devices that are fabricated with organic CdTe quantum dots. We believe that it is the spike-like conduction band alignment between the ZMO and CdTe absorbed layer that reduces the majority carrier concentration, leading to the decrease in interface recombination probability.

Room-Temperature Infrared Photodetectors with Zero-Dimensional and New Two-Dimensional Materials

Infrared photodetectors have received much attention for several decades due to their broad applications in the military, science, and daily life. However, for achieving an ideal signal-to-noise ratio and a very fast response, cooling is necessary in those devices, which makes them bulky and costly. Thus, room-temperature infrared photodetectors have emerged as a hot research direction. Novel low-dimensional materials with their easy fabrication and excellent photoelectronic properties provide a possible solution for room-temperature infrared photodetectors. This review aims to summarize the preparation methods and characterization of several low-dimensional materials (PbS, PbSe and HgTe, new two-dimensional materials) with great concern and the room-temperature infrared photodetectors based on them.

Colloidal Inorganic Ligand-Capped Nanocrystals: Fundamentals, Status, and Insights into Advanced Functional Nanodevices

Colloidal nanocrystals (NCs) are intriguing building blocks for assembling various functional thin films and devices. The electronic, optoelectronic, and thermoelectric applications of solution-processed, inorganic ligand (IL)-capped colloidal NCs are especially promising as the performance of related devices can substantially outperform their organic ligand-capped counterparts. This in turn highlights the significance of preparing IL-capped NC dispersions. The replacement of initial bulky and insulating ligands capped on NCs with short and conductive inorganic ones is a critical step in solution-phase ligand exchange for preparing IL-capped NCs. Solution-phase ligand exchange is extremely appealing due to the highly concentrated NC inks with completed ligand exchange and homogeneous ligand coverage on the NC surface. In this review, the state-of-the-art of IL-capped NCs derived from solution-phase inorganic ligand exchange (SPILE) reactions are comprehensively reviewed. First, a general overview of the development and recent advancements of the synthesis of IL-capped colloidal NCs, mechanisms of SPILE, elementary reaction principles, surface chemistry, and advanced characterizations is provided. Second, a series of important factors in the SPILE process are offered, followed by an illustration of how properties of NC dispersions evolve after ILE. Third, surface modifications of perovskite NCs with use of inorganic reagents are overviewed. They are necessary because perovskite NCs cannot withstand polar solvents or undergo SPILE due to their soft ionic nature. Fourth, an overview of the research progresses in utilizing IL-capped NCs for a wide range of applications is presented, including NC synthesis, NC solid and film fabrication techniques, field effect transistors, photodetectors, photovoltaic devices, thermoelectric, and photoelectrocatalytic materials. Finally, the review concludes by outlining the remaining challenges in this field and proposing promising directions to further promote the development of IL-capped NCs in practical application in the future.

Dynamic Formation of Metal-Based Traps in Photoexcited Colloidal Quantum Dots and Their Relevance for Photoluminescence

Trap states play a crucial role in the design of colloidal quantum dot (QD)-based technologies. The presence of these in-gap states can either significantly limit the efficiency of devices (e.g., in solar cells or LEDs) or play a pivotal role in the functioning of the technology (e.g., in catalysis). Understanding the atomistic nature of traps is therefore of the highest importance. Although the mechanism through which undercoordinated chalcogenide atoms can lead to trap states in II-VI QDs is generally well understood, the nature of metal-based traps remains more elusive. Previous research has shown that reduction of metal sites in negatively charged QDs can lead to in-gap states. Here, we use density functional theory to show that metal-based traps are also formed in charge-neutral but photoexcited CdSe QDs. It is found that Cd-Cd dimers and the concomitant trap states are transient in nature and appear and disappear on the picosecond time scale. Subsequent nonradiative recombination from the trap is shown to be much faster than radiative recombination, indicating that dimer-related trap states can quench the photoluminescence. These results are expected to be transferable to other II-VI materials and highlight the importance of surface redox reactions for the optical properties of QDs. Moreover, they show that photoexcitation can lead to atomic rearrangements on the surface and thus create transient in-gap states.

Scalable PbS Quantum Dot Solar Cell Production by Blade Coating from Stable Inks

The recent development of phase transfer ligand exchange methods for PbS quantum dots (QD) has enhanced the performance of quantum dots solar cells and greatly simplified the complexity of film deposition. However, the dispersions of PbS QDs (inks) used for film fabrication often suffer from colloidal instability, which hinders large-scale solar cell production. In addition, the wasteful spin-coating method is still the main technique for the deposition of QD layer in solar cells. Here, we report a strategy for scalable solar cell fabrication from highly stable PbS QD inks. By dispersing PbS QDs capped with CH3NH3PbI3 in 2,6-difluoropyridine (DFP), we obtained inks that are colloidally stable for more than 3 months. Furthermore, we demonstrated that DFP yields stable dispersions even of large diameter PbS QDs, which are of great practical relevance owing to the extended coverage of the near-infrared region. The optimization of blade-coating deposition of DFP-based inks enabled the fabrication of PbS QD solar cells with power conversion efficiencies of up to 8.7%. It is important to underline that this performance is commensurate with the devices made by spin coating of inks with the same ligands. A good shelf life-time of these inks manifests itself in the comparatively high photovoltaic efficiency of 5.8% obtained with inks stored for more than 120 days.

Transfer mechanisms in semiconductor hybrids with colloidal core/shell quantum dots on ZnSe substrates

Hybrid systems consisting of colloidal CdS/ZnS core/shell quantum dots on ZnSe semiconductor substrates have been studied by continuous-wave and nanosecond time-resolved photoluminescence. On the basis of kinetic calculations, we studied the interplay between the possible transfer processes in these hybrids. The considered transfer mechanisms were resonance energy transfer, photon reabsorption, electron and hole tunneling. Depending on the size of the CdS cores the dominating transfer mechanism is changing. Carrier tunneling was found only for quantum dots in direct contact to the substrate. For large quantum dots a hole tunneling was found, whereas in case of small dots the fast electron tunneling is decisive. Eventually, we were able to determine the conduction band offset between CdS and ZnSe to 0.56 eV at 10 K.

On the Colloidal Stability of PbS Quantum Dots Capped with Methylammonium Lead Iodide Ligands

Phase-transfer exchange of pristine organic ligands for inorganic ones is essential for the integration of colloidal quantum dots (CQDs) in optoelectronic devices. This method results in a colloidal dispersion (ink) which can be directly deposited by various solution-processable techniques to fabricate conductive films. For PbS CQDs capped with methylammonium lead iodide ligands (MAPbI₃), the most commonly employed solvent is butylamine, which enables only a short-term (hours) colloidal stability and thus brings concerns on the possibility of manufacturing CQD devices on a large scale in a reproducible manner. In this work, we studied the stability of alternative inks in two highly polar solvents which impart long-term colloidal stability of CQDs: propylene carbonate (PC) and 2,6-difluoropyridine (DFP). The aging and the loss of the ink's stability were monitored with optical, structural, and transport measurements. With these solvents, PbS CQDs capped with MAPbI₃ ligands retain colloidal stability for more than 20 months, both in dilute and concentrated dispersions. After 17 months of ink storage, transistors with a maximum linear mobility for electrons of 8.5 × 10^-3 cm²/V s are fabricated; this value is 17% of the one obtained with fresh solutions. Our results show that both PC- and DFP-based PbS CQD inks offer the needed shelf life to allow for the development of a CQD device technology.

Ligand-Length Modification in CsPbBr3 Perovskite Nanocrystals and Bilayers with PbS Quantum Dots for Improved Photodetection Performance

Nanocrystals surface chemistry engineering offers a direct approach to tune charge carrier dynamics in nanocrystals-based photodetectors. For this purpose, we have investigated the effects of altering the surface chemistry of thin films of CsPbBr₃ perovskite nanocrystals produced by the doctor blading technique, via solid state ligand-exchange using 3-mercaptopropionic acid (MPA). The electrical and electro-optical properties of photovoltaic and photoconductor devices were improved after the MPA ligand exchange, mainly because of a mobility increase up to 5 × 10⁻³cm2/Vs. The same technology was developed to build a tandem photovoltaic device based on a bilayer of PbS quantum dots (QDs) and CsPbBr₃ perovskite nanocrystals. Here, the ligand exchange was successfully carried out in a single step after the deposition of these two layers. The photodetector device showed responsivities around 40 and 20 mA/W at visible and near infrared wavelengths, respectively. This strategy can be of interest for future visible-NIR cameras, optical sensors, or receivers in photonic devices for future Internet-of-Things technology.

Universal direct patterning of colloidal quantum dots by (extreme) ultraviolet and electron beam lithography

Colloidal quantum dots have found many applications and patterning them on micro- and nanoscale would open a new dimension of tunability for the creation of smaller scale (flexible) electronics or nanophotonic structures. Here we present a simple, general, one-step top-down patterning technique for colloidal quantum dots by means of direct optical or electron beam lithography. We find that both photons and electrons can induce a solubility switch of both PbS and CdSe quantum dot films. The solubility switch can be ascribed to cross-linking of the organic ligands, which we observe from exposure with deep-UV photons (5.5 eV) to extreme-UV photons (91.9 eV), and low-energy (3-70 eV) as well as highly energetic electrons (50 keV). The required doses for patterning are relatively low and feature sizes can be as small as tens of nanometers. The luminescence properties as well as carrier lifetimes remain similar after patterning.

Improved Reproducibility of PbS Colloidal Quantum Dots Solar Cells Using Atomic Layer-Deposited TiO2

Thanks to their broadly tunable bandgap and strong absorption, colloidal lead chalcogenide quantum dots (QDs) are highly appealing as solution-processable active layers for third-generation solar cells. However, the modest reproducibility of this kind of solar cell is a pertinent issue, which inhibits the exploitation of this material class in optoelectronics. This issue is not necessarily imputable to the active layer but may originate from different constituents of the device structure. Herein, the deposition of TiO2 electron transport layer is focused on. Atomic layer deposition (ALD) greatly improves the reproducibility of PbS QD solar cells compared with the previously optimized sol-gel (SG) approach. Power conversion efficiency (PCE) of the solar cells using atomic layer-deposited TiO2 lies in the range between 5.5% and 7.2%, whereas solar cells with SG TiO2 have PCE ranging from 0.5% to 6.9% with a large portion of short-circuited devices. Investigations of TiO2 layers by atomic force microscopy and scanning electron microscopy reveal that these films have very different surface morphologies. Whereas the TiO2 films prepared by SG synthesis and deposited by spin coating are very smooth, TiO2 films made by ALD repeat the surface texture of the fluorine-doped tin oxide (FTO) substrate underneath.

Flexible colloidal nanocrystal electronics

Nanometer-scale crystals of bulk group IV, III-V, II-VI, IV-VI, I-III-VI2, and metal-halide perovskite semiconductors, dispersed in solvents, are known as colloidal nanocrystals and form an excellent, solution-processable materials class for thin film and flexible electronics. This review surveys the size, composition, and surface chemistry-dependent properties of semiconductor NCs and thin films derived therefrom and provides physico-chemical insight into the recent leaps forward in the performance of NC field-effect transistors. Device design and fabrication methods are described that have enabled the demonstration and scaling up in complexity and area and scaling down in device size of flexible, colloidal nanocrystal integrated circuits. Finally, taking stock of the advances made in the science and engineering of NC systems, challenges and opportunities are presented to develop next-generation, colloidal NC electronic materials and devices, important to their potential in future computational and in Internet of Things applications.

Surface-Modified Substrates for Quantum Dot Inks in Printed Electronics

Printed electronics fill the niches for low-cost, flexible devices in electronics. Developing substrates suitable for various printable electronic inks becomes an important topic in both academia and industry. Because of their extraordinary properties like solution processability, colloidal quantum dots (QDs) are gradually emerging in this field as promising candidates for electronic inks. In recent years, researchers have successfully produced high quality PbS QD inks in polar solvents. However, the incorporation of electronic inks onto a well-passivated substrate remains challenging due to the processing incompatibility between polar solvents and hydrophobic substrates. Here, we propose a surface modification strategy by using chlorine to achieve both trap-site suppression and a hydrophilic surface. The chlorine can effectively passivate the surface dangling bonds and charged hydroxyls while creating a hydrophilic surface. On this modified substrate, the contact angle between the water droplet and the SiO₂ substrate can be as small as 20° and this strategy is also feasible for other polymer and inorganic substrates. For a proof-of-concept demonstration, we fabricated a PbS QD ink-based field-effect transistor on a Cl-passivated substrate, and the device showed a mobility as high as 4.36 × 10^-3 cm²/V s, which indicates effective trap-site suppression. This device also enables the potential of the Cl-passivated substrates for QD inks with water or other polar solvents.

Fully Printed Infrared Photodetectors from PbS Nanocrystals with Perovskite Ligands

Colloidal nanocrystals from PbS are successfully applied in highly sensitive infrared photodetectors with various device architectures. Here, we demonstrate all-printed devices with high detectivity (∼10¹² cm Hz^1/2/W) and a cut-off frequency of >3 kHz. The low material consumption (<0.3 mg per detector) and short processing time (14 s per detector) enabled by the automated printing promises extremely low device costs. To enable all-printed devices, an ink formulation was developed based on nanocrystals stabilized by perovskite-like methylammonium iodobismuthate ligands, which are dispersed in a ternary solvent. Fully inkjet printed devices based on this solvent were achieved with printed silver electrodes and a ZnO interlayer. Considerable improvements were obtained by the addition of small amounts of the polymer poly(vinylpyrrolidone) to the ink. The polymer improved the colloidal stability of the ink and its film-formation properties and thus enabled the scalable printing of single detectors and detector arrays. While photoconductors were shown here, the developed ink will certainly find application in a series of further electronic devices based on nanocrystals from a broad range of materials.

Halide-, Hybrid-, and Perovskite-Functionalized Light Absorbing Quantum Materials of p-i-n Heterojunction Solar Cells

The p-i-n quantum dot (QD) solar cells were fabricated through the single-step deposition of both of its p-type and light absorbing quantum layers. The hole transport and light absorbing layers of these devices were made by the p- and n-type PbS QDs, which were functionalized with mercaptopropionic acid and different halide, hybrid, and perovskite ligands, respectively. Fabrication of such p-i-n devices by the single-step deposition of pre-exchanged colloidal QDs had not been fully investigated so far because of the low progression of ligand exchange processes, weak colloidal stability of pre-exchanged QDs in desired solvents, and remaining of the ligand exchange products along with particles. However, we showed that the type of ligand complexes, amino acid products of ligand exchange, and protic solvents are highly effective for increasing the ligand exchange progression and preparation of high colloidal stability QDs with superior photoluminescence properties. As well, the surface chemistry investigations by the means of Fourier transform infrared, nuclear magnetic resonance, X-ray photoelectron spectroscopy, X-ray diffraction, inductively coupled plasma optical emission spectrometry, carbon-hydrogen-nitrogen-sulfur elemental analysis, zeta potential, and high-resolution transmission electron microscopy were led to the presentation of new concepts about the theoretical and experimental ligand weight percentages, the mechanisms of solution-phase ligand exchange processes, and formation of ligands adlayer on the (111) facets of QDs. The pre-exchanged colloidal QDs showed very good desirability for the single-step deposition of dense, defects-free, and smooth QD layers. Regarding that, the p-i-n solar cells were successfully fabricated by the single-step deposition of both of the QD layers. Especially, the highest power conversion efficiency value of 6.40% was recorded for the devices in which the light absorbing layer was prepared by the composite-like QD-perovskite structures.

Charge Transport in Trap-Sensitized Infrared PbS Quantum-Dot-Based Photoconductors: Pros and Cons

Control of quantum-dot (QD) surface chemistry offers a direct approach for the tuning of charge-carrier dynamics in photoconductors based on strongly coupled QD solids. We investigate the effects of altering the surface chemistry of PbS QDs in such QD solids via ligand exchange using 3-mercaptopropionic acid (MPA) and tetrabutylammonium iodide (TBAI). The roll-to-roll compatible doctor-blade technique was used for the fabrication of the QD solid films as the photoactive component in photoconductors and field-effect phototransistors. The ligand exchange of the QD solid film with MPA yields superior device performance with higher photosensitivity and detectivity, which is due to less dark current and lower noise level as compared to ligand exchange with TBAI. In both cases, the mechanism responsible for photoconductivity is related to trap sensitization of the QD solid, in which traps are responsible of high photoconductive gain values, but slow response times under very low incident optical power (<1 pW). At medium⁻high incident optical powers (>100 pW), where traps are filled, both MPA- and TBAI-treated photodevices exhibit similar behavior, characterized by lower responsivity and faster response time, as limited by the mobility in the QD solid.