Self-Integrated Hybrid Ultraviolet Photodetectors Based on the Vertically Aligned InGaN Nanorod Array Assembly on Graphene

Recent Advances in Low-Dimensional Nanomaterials for Photodetectors

New emerging low-dimensional such as 0D, 1D, and 2D nanomaterials have attracted tremendous research interests in various fields of state-of-the-art electronics, optoelectronics, and photonic applications due to their unique structural features and associated electronic, mechanical, and optical properties as well as high-throughput fabrication for large-area and low-cost production and integration. Particularly, photodetectors which transform light to electrical signals are one of the key components in modern optical communication and developed imaging technologies for whole application spectrum in the daily lives, including X-rays and ultraviolet biomedical imaging, visible light camera, and infrared night vision and spectroscopy. Today, diverse photodetector technologies are growing in terms of functionality and performance beyond the conventional silicon semiconductor, and low-dimensional nanomaterials have been demonstrated as promising potential platforms. In this review, the current states of progress on the development of these nanomaterials and their applications in the field of photodetectors are summarized. From the elemental combination for material design and lattice structure to the essential investigations of hybrid device architectures, various devices and recent developments including wearable photodetectors and neuromorphic applications are fully introduced. Finally, the future perspectives and challenges of the low-dimensional nanomaterials based photodetectors are also discussed.

An ultrafast and self-powered MoSxSe2-x/Si photodetector with high light-trapping structures and a SiOx interface layer

MoSxSe2-x nanofilms, as a typical metal dichalcogenide, have attracted great interest, due to their adjustable bandgap and distinctive electronic and optical properties. However, the inherent bandgap of MoSxSe2-x and the strong interface recombination impede the actualization of a high-sensitivity photodetector (PD). Few-layer MoSxSe2-x nanofilms were prepared with vertically orientation at 450 °C, which would be a less restrictive choice of substrates. Herein, a self-powered MoSxSe2-x/SiOx/Si photodetector was fabricated which exhibits unprecedented performance with excellent reproducibility and stability from 405 nm to 980 nm, a high responsivity (0.450 A W-1), normalized detectivity (4.968 × 1012 Jones) and ultrafast photoresponse (τr = 1.20 μs, τf = 4.92 μs) at zero bias under 980 nm incident laser illumination with a density of 200 μW cm-2. Significantly, the self-powered PD is capable of detecting ultraweak IR signals below 200 μW cm-2 with high on-off ratios. More importantly, an oxidized atomic layer is generated through the wet oxidation in the Piranha solution. The PD can work well at high frequencies even at 100 kHz, which shows its potential application in high-frequency photoelectric devices and health monitors. Summing up, this work not only suggests that an ultrathin SiOx interface layer can reduce carrier recombination via simple interface engineering, but also proposes a novel strategy for the preparation of high-performance and low-cost optoelectronic devices.

Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review

Remote epitaxy, which was discovered and reported in 2017, has seen a surge of interest in recent years. Although the technology seemed to be difficult to reproduce by other labs at first, remote epitaxy has come a long way and many groups are able to consistently reproduce the results with a wide range of material systems including III-V, III-N, wide band-gap semiconductors, complex-oxides, and even elementary semiconductors such as Ge. As with any nascent technology, there are critical parameters which must be carefully studied and understood to allow wide-spread adoption of the new technology. For remote epitaxy, the critical parameters are the (1) quality of two-dimensional (2D) materials, (2) transfer or growth of 2D materials on the substrate, (3) epitaxial growth method and condition. In this review, we will give an in-depth overview of the different types of 2D materials used for remote epitaxy reported thus far, and the importance of the growth and transfer method used for the 2D materials. Then, we will introduce the various growth methods for remote epitaxy and highlight the important points in growth condition for each growth method that enables successful epitaxial growth on 2D-coated single-crystalline substrates. We hope this review will give a focused overview of the 2D-material and substrate interaction at the sample preparation stage for remote epitaxy and during growth, which have not been covered in any other review to date.

Vertical 1D/2D Heterojunction Architectures for Self-Powered Photodetection Application: GaN Nanorods Grown on Transition Metal Dichalcogenides

Van der Waals (vdW) heterojunctions based on two-dimensional (2D) transition metal dichalcogenide (TMD) materials have attracted the attention of researchers to conduct fundamental investigations on emerging physical phenomena and expanding diverse nano-optoelectronic devices. Herein, the quasi-van der Waals epitaxial (QvdWE) growth of vertically aligned one-dimensional (1D) GaN nanorod arrays (NRAs) on TMDs/Si substrates is reported, and their vdW heterojunctions in the applications of high-performance self-powered photodetection are demonstrated accordingly. Such 1D/2D hybrid systems fully combine the advantages of the strong light absorption of 1D GaN nanoarrays and the excellent electrical properties of 2D TMD materials, boosting the photogenerated current density, which demonstrates a light on/off ratio above 10⁵. The device exhibits a competitive photovoltaic photoresponsivity over 10 A W^-1 under a weak detectable light signal without any external bias, which is attributed to the efficient photogenerated charge separation under the strong built-in potential from the type-II band alignment of GaN NRAs/TMDs. This work presents a QvdWE route to prepare 1D/2D heterostructures for the fabrication of self-powered photodetectors, which shows promising potentials for practical applications of space communications, sensing networks, and environmental monitoring.

High-speed graphene/InGaN heterojunction photodetectors for potential application in visible light communication

Due to the wavelength-selective absorption characteristic of indium gallium nitride (InGaN) ternary alloy, the InGaN-based photodetectors (PDs) show great potential as high signal-to-noise ratio (SNR) receivers in the visible light communication (VLC) system. However, the application of InGaN-based PDs with simple structure in the VLC system is limited by slow speed. Integration of graphene (Gr) with InGaN is an effective strategy for overcoming the limitation. Herein, we report on a high responsivity and fast response PDs based on Gr/InGaN heterojunctions. It finds that the three-layer Gr (T-Gr) can effectively improve the InGaN-based PDs photoelectric properties. The T-Gr/InGaN PDs show a high responsivity of 1.39 A/W@-3 V and a short rise/fall time of 60/200 µs, which are attributed to the combination of the high-quality InGaN epitaxial films and finite density of states of three-layer graphene. The fast response with high responsivity endows the T-Gr/InGaN PDs with great potential for selective detection of the VLC system.

Homogeneous and well-aligned GaN nanowire arrays via a modified HVPE process and their cathodoluminescence properties

In this work, we demonstrate the growth of homogeneous and well-aligned [0001]-oriented 1-D GaN nanoarrays via a modified hydride vapor phase epitaxy (HVPE) process using GaCl₃ and NH₃ as precursors. The density and length of the grown nanowires can be easily controlled by the process parameters. It was found that the growth technique provides Cl-rich growth conditions, which lead to special morphology and optical properties of the GaN nanoarrays. Different from reported GaN nanowires, the as-synthesized GaN nanoarrays in this study exhibit a hollow bamboo-like structure. Also, the cathodoluminescence spectrum shows strong visible luminescence between 400 and 600 nm wavelengths centered at 450 nm, and the disappearance of an intrinsic emission peak, which has been investigated in detail with the assistance of first-principles calculations. The strategy proposed in this work will pave a solid way for the controlled nucleation and growth of well-aligned GaN nanowire arrays which are significant for applications in large-scale integrated optoelectronic nanodevices, functionalized sensors and photoelectrocatalysis.

A nanopillar-modified high-sensitivity asymmetric graphene-GaN photodetector

Integration of two-dimensional (2D) materials with three-dimensional (3D) semiconductors leads to intriguing optical and electrical properties that surpass those of the original materials. Here, we report the high performance of a GaN nanopillar-modified graphene/GaN/Ti/Au photodetector (PD). After etching on the surface of a GaN film, GaN nanopillars exhibit multiple functions for improving the detection performance of the PD. Under dark conditions, surface etching reduces the contact area of GaN with the graphene electrode, leading to a reduced dark current for the PD. When illuminated with UV light, the nanopillars enable an enhanced and localized electric field inside GaN, resulting in an ∼20% UV light absorption enhancement and a several-fold increased photocurrent. In addition, the nanopillars are intentionally etched beneath the metal Ti/Au electrode to modify the semiconductor-metal junction. Further investigation shows that the modified GaN/Ti/Au contact triggers a prominent rectifying I-V behaviour. Benefiting from the nanopillar modification, the proposed PD shows a record large detectivity of 1.85 × 10¹⁷ Jones, a small dark current of 5.2 nA at +3 V bias, and a nearly three order of magnitude rectification ratio enhancement compared with non-nanopillar PDs. This pioneering work provides a novel nanostructure-modifying method for combining 2D materials and 3D semiconductors to improve the performances of electronic and optoelectronic devices.

Stretchable Inorganic GaN-Nanowire Photosensor with High Photocurrent and Photoresponsivity

To effectively implement wearable systems, their constituent components should be made stretchable. We successfully fabricated highly efficient stretchable photosensors made of inorganic GaN nanowires (NWs) as light-absorbing media and graphene as a carrier channel on polyurethane substrates using the pre-strain method. When a GaN-NW photosensor was stretched at a strain level of 50%, the photocurrent was measured to be 0.91 mA, corresponding to 87.5% of that (1.04 mA) obtained in the released state, and the photoresponsivity was calculated to be 11.38 A/W. These photosensors showed photocurrent and photoresponsivity levels much higher than those previously reported for any stretchable semiconductor-containing photosensor. To explain the superior performances of the stretchable GaN-NW photosensor, it was approximated as an equivalent circuit with resistances and capacitances, and in this way, we analyzed the behavior of the photogenerated carriers, particularly at the NW-graphene interface. In addition, the buckling phenomenon typically observed in organic-based stretchable devices fabricated using the pre-strain method was not observed in our photosensors. After a 1000-cycle stretching test with a strain level of 50%, the photocurrent and photoresponsivity of the GaN-NW photosensor were measured to be 0.96 mA and 11.96 A/W, respectively, comparable to those measured before the stretching test. To evaluate the potential of our stretchable devices in practical applications, the GaN-NW photosensors were attached to the proximal interphalangeal joint of the index finger and to the back of the wrist. Photocurrents of these photosensors were monitored during movements made about these joints.

The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation

A challenging approach, but one providing a key solution to material growth, remote epitaxy (RE)-a novel concept related to van der Waals epitaxy (vdWE)-requires the stability of a two-dimensional (2-D) material. However, when graphene, a representative 2-D material, is present on substrates that have a nitrogen atom, graphene loss occurs. Although this phenomenon has remained a hurdle for over a decade, restricting the advantages of applying graphene in the growth of III-nitride materials, few previous studies have been conducted. Here, we report the stability of graphene on substrates containing oxygen or nitrogen atoms. Graphene has been observed on highly decomposed Al2O3; however, graphene loss occurred on decomposed AlN at temperatures over 1300 °C. To overcome graphene loss, we investigated 2-D hexagonal boron nitride (h-BN) as an alternative. Unlike graphene on AlN, it was confirmed that h-BN on AlN was intact after the same high-temperature process. Moreover, the overgrown AlN layers on both h-BN/AlN and h-BN/Al2O3 could be successfully exfoliated, which indicates that 2-D h-BN survived after AlN growth and underlines its availability for the vdWE/RE of III-nitrides with further mechanical transfer. By enhancing the stability of the 2-D material on the substrate, our study provides insights into the realization of a novel epitaxy concept.

Dual-wavelength visible photodetector based on vertical (In,Ga)N nanowires grown by molecular beam epitaxy

Due to the wide applications of blue and red photodetectors, dual-wavelength (blue/red) photodetectors are promising for future markets. In this work, a dual-wavelength photodetector based on vertical (In,Ga)N nanowires and graphene has been fabricated successfully. By using the transparent graphene, both blue and red responses can be clearly detected. The rise time of response can reach 3.5 ms. Furthermore, the underlying mechanism of double responses has also been analyzed. The main reason contributing to the dual-wavelength response could be the different diameters of nanowires, leading to different In components within (In,Ga)N sections.

Applications of Plasma-Assisted Systems for Advanced Electrode Material Synthesis and Modification

Research on advanced electrode materials (AEMs) has been explosive for the past decades and constantly promotes the development of batteries, supercapacitors, electrocatalysis, and photovoltaic applications. However, traditional preparation and modification methods can no longer meet the increasing requirements of some AEMs because some of the special reactions are thermodynamically and/or kinetically unfavorable and thus need harsh conditions. Among various recently developed advanced materials synthesis and modification routes, the plasma-assisted (PA) method has received increasing attention because of its unique and different "species reactivity" nature, as well as its wider and adjustable operating conditions. In this Spotlight on Applications, we highlight some recent developments and describe our recent progress by applying PA systems in the synthesis and modification of AEMs, including direct processing, PA deposition, and plasma milling (P-milling). The mechanisms of how plasma works for specific reactions are reviewed and discussed. It is shown that the PA technique has become a powerful and efficient tool in the following areas, including but not limited to materials synthesis, doping, surface modification, and functionalization. Finally, the prospect and challenges are also proposed for AEM preparation and modification using PA systems. This article aims to provide up-to-date information about the progress of PA technology in the fields of chemistry and materials science.

Highly Efficient InGaN Nanorods Photoelectrode by Constructing Z-scheme Charge Transfer System for Unbiased Water Splitting

Unbiased photoelectrochemical water splitting for the promising InGaN nanorods photoelectrode is highly desirable, but it is practically hindered by the serious recombination of charge carrier in bulk and surface of InGaN nanorods. Herein, an unbiased Z-scheme InGaN nanorods/Cu₂ O nanoparticles heterostructured system with boosted interfacial charge transfer is constructed for the first time. The introduced Cu₂ O nanoparticles pose double-sided effect on photoelectrochemical (PEC) performance of InGaN nanorods, which enables a robust hybrid structure and induces weakened light absorption capability simultaneously. As a result, the optimized InGaN/Cu₂ O-1.5C photoelectrode with the uniform morphology exhibits an enhanced photocurrent density of ≈170 µA cm^-2 at 0 V versus Pt, with 8.5-fold enhancement compared with pure InGaN nanorods. Comprehensive investigations into experimental results and theoretical calculations reveal that the electrons accumulation and holes depletion of Cu₂ O facilitate to form a typical Z-scheme band alignment, thus providing a large photovoltage to drive unbiased water splitting and enhancing the stability of Cu₂ O. This work provides a novel and facile strategy to achieve InGaN nanorods and other catalyst-based PEC water splitting without external bias, and to relieve the bottlenecks of charge transfer dynamics at the electrode bulk and electrode/electrolyte interface by constructing Z-scheme heterostructure.

High responsivity and high speed InGaN-based blue-light photodetectors on Si substrates

Due to the adjustable band gap, the excellent radiation stability, and the high electron mobility of InGaN, the InGaN-based blue-light photodetectors (PDs) show great potential in visible light communication (VLC) systems. However, the applications of InGaN-based blue-light PDs in VLC systems are limited by the poor performance caused by the poor crystalline quality of InGaN materials. Herein, we report on the fabrication of high responsivity and high response speed InGaN-based metal–semiconductor metal (MSM) blue-light PDs using high-quality InGaN epitaxial films grown on Si substrates by the combination of low-temperature pulsed laser deposition (LT-PLD) and high-temperature metal organic chemical deposition (HT-MOCVD). The technology can not only suppress the interfacial reactions between films and substrates by LT-PLD growth, but also promote the lateral overgrowth of InGaN and improve the crystalline quality of InGaN-based epitaxial films by HT-MOCVD growth. Based on the high-quality InGaN-based materials, high-performance InGaN-based blue-light PDs are fabricated accordingly with a high responsivity of 0.49 A W⁻¹ and a short rise/fall response time of 1.25/1.74 ms at an applied bias of −3 V. The performance is better than the results for the InGaN-based PDs previously reported. The InGaN-based blue-light PDs shed light on the potential for VLC system applications.

High-performance InGaN-based blue-light PDs have been fabricated with a high responsivity of 0.49 A W⁻¹ and a short rise/fall response time of 1.25/1.74 ms at an applied bias of −3 V.

InGaN islands and thin films grown on epitaxial graphene

In this work, the growth of InGaN on epitaxial graphene by molecular beam epitaxy is studied. The nucleation of the alloy follows a three-dimensional (3D) growth mode in the observed temperature range of 515 °C-765 °C, leading to the formation of dendrite-like islands. Careful Raman scattering experiments show that the graphene underneath is not degraded by the InGaN growth. Moreover, lateral displacement of the nuclei during an atomic force microscopy (AFM) scan demonstrates weak bonding interactions between the InGaN and the graphene. Finally, a longer growth time of the alloy gives rise to a compact thin film in a partial epitaxial relationship with the SiC underneath the graphene.

Hybrid Light Emitters and UV Solar-Blind Avalanche Photodiodes based on III-Nitride Semiconductors

In the last two decades, remarkable progress has been achieved in the field of optoelectronic devices based on III-nitride semiconductors. In terms of photonics applications in the visible-UV spectral range, III-nitrides are one of the most promising materials. For instance, emerging gallium nitride (GaN)-based micro-light-emitting diode (LED) technology for high-resolution display, and UV photo-detection for environmental monitoring, health, and medical applications. In this work, hybrid micro/nano-LEDs with integration of II-VI quantum dots by means of lithography and nano-imprinting patterning techniques are demonstrated, and high-performance red/green/blue and white emissions are achieved. Consequently, plasmonic nanolasers are designed and fabricated using a metal-oxide-semiconductor structure, where strong surface plasmon polariton coupling leads to the efficient lasing with a low excitation threshold from the visible to UV tunable spectral range. Furthermore, performance-improved AlGaN UV solar-blind avalanche photodiodes (APDs) with a separate absorption and multiplication structure by polarization engineering are reported. These APDs deliver a record-high avalanche gain of up to 1.6 × 10⁵ . These newest advances in nano/micro-LEDs, nanolasers, and APDs can shed light on the emerging capabilities of III-nitride in cutting-edge applications.

In Situ Conformal Coating of Polyaniline on GaN Microwires for Ultrafast, Self-Driven Heterojunction Ultraviolet Photodetectors

Independent and zero-maintenance systems would be in urgent need in the near future internet of things. Here, we present high-performance, self-driven organic/inorganic heterojunction ultraviolet (UV) photodetectors (PDs) by in situ polymerization of polyaniline (PANI) on Gallium nitride microwires. The GaN microwires with a high crystalline quality are grown on patterned Si substrates by metal organic chemical vapor deposition. Using a facile in situ chemical polymerization method, PANI is conformally coated on the surface of GaN microwires. The constructed GaN/PANI hybrid microwire PD exhibits a high responsivity of 178 mA/W, a remarkable detectivity of 4.67 × 10¹⁴ jones, and an ultrafast UV photoresponse speed (rise time of 0.2 ms and fall time of 0.3 ms) under zero bias. The intimate heterojunction in the form of N-Ga-N bonds between GaN and PANI may account for the observed high performances. The presented self-driven microwire UV PDs featuring ultrahigh-speed (sub-millisecond) response to UV light may find applications in future nano/micro-photosensor networks.

Enhancement of UV Photodetection Properties of Hierarchical Core-Shell Heterostructures of a Natural Sericin Biopolymer with the Addition of ZnO Fabricated on Ultra-Nanocrystalline Diamond Layers

A novel self-assembled hierarchical heterostructure is derived from cocoon-derived sericin biopolymer (CSP) biowaste with ZnO deposited on ultra-nanocrystalline diamond (UNCD) substrates using a scalable chemical deposition technique. Then, high-performance long-life UV photodetectors are fabricated using this hybrid sericin, diamond, and ZnO (SDZ) nanostructure. The microstructural analysis reveals a several nanometer-thick CSP shell coated with a highly uniform ZnO nanorod (ZNR) array grown on the UNCD substrate. The CSP shell also contains columnar nanograins on top of the ZNR as well as vertical sidewalls with unique alignments. The hierarchical core-shell SDZ heterostructures reveal superior UV diode performance, with an ultrahigh UV switching ratio of 1.1 × 10⁵ at 5 V, an increase of up to 49 900% greater than that of as-grown ZNRs (220). High UV responsivity is observed around 3.6 A W^-1 under 365 nm UV light illumination. The perfect distribution of the sericin in the ZNRs on the UNCD substrates resulted in the ultrafast electron-hole recombination. The sericin dopants and the UNCD interlayer enabled the device to reach new energy levels in the conduction band, with the reduced barrier height allowing for improved charge carrier transportation during UV light illumination. It is believed that the sericin dopants and the UNCD layer increased the UV adsorptivity and the amount of conducting carbon dopants within the ZNRs was sufficient for s0tability. These noteworthy features make the SDZ heterostructures promising candidates for the fabrication of cost-efficient biopolymers and UNCD hybrid-based UV photodetectors.

Fast Response Characteristics of Flexible Ultraviolet Photosensors with GaN Nanowires and Graphene

We report the fast response characteristics of flexible ultraviolet photosensors with GaN nanowires (NWs) and a graphene channel. The GaN NWs used as light-absorbing media are horizontally and randomly embedded in a graphene sandwich structure in which the number of bottom graphene layers is varied from zero to three and the top is a fixed single layer of graphene. In the response curve of the photosensor with a double-layer bottom graphene, as obtained under pulsed illumination with a pulse width of 50 ms and a duty cycle of 50%, the rise and decay times were measured as 24.1 ± 0.1 and 28.2 ± 0.1 ms, respectively. The eye-crossing percentage was evaluated as 52.1%, indicating no substantial distortion of the duty cycle and no pulse symmetry problem. The rise and decay times estimated from an equivalent circuit analysis represented by resistances and capacitances agree well with the measured values. When the device was under the bending condition, the rise and decay times of the photosensor were comparable to those in the unbent state.