Improved Sensitivity in Schottky Contacted Two-Dimensional MoS2 Gas Sensor

Advancing Nanoelectronics Applications: Progress in Non-van der Waals 2D Materials

Extending the inventory of two-dimensional (2D) materials remains highly desirable, given their excellent properties and wide applications. Current studies on 2D materials mainly focus on the van der Waals (vdW) materials since the discovery of graphene, where properties of atomically thin layers have been found to be distinct from their bulk counterparts. Beyond vdW materials, there are abundant non-vdW materials that can also be thinned down to 2D forms, which are still in their early stage of exploration. In this review, we focus on the downscaling of non-vdW materials into 2D forms to enrich the 2D materials family. This underexplored group of 2D materials could show potential promise in many areas such as electronics, optics, and magnetics, as has happened in the vdW 2D materials. Hereby, we will focus our discussion on their electronic properties and applications of them. We aim to motivate and inspire fellow researchers in the 2D materials community to contribute to the development of 2D materials beyond the widely studied vdW layered materials for electronic device applications. We also give our insights into the challenges and opportunities to guide researchers who are desirous of working in this promising research area.

Constructing Adsorption Site-Enhanced Vo-BiOCl/rGO Heterostructures for Efficient Response to NO2/NH3 Gases at Room Temperature

Real-time detection of harmful gases at room temperature has become a serious problem in public health and environmental monitoring. Two-dimensional materials with semiconductor properties BiOCl is a promising gas-sensitive material due to its large specific surface area and adjustable band gap as well as outstanding safety characteristics. However, limited by the weak gas adsorption sites and sluggish charge-transfer ability, the performance of BiOCl could not be fully exploited. Oxygen vacancy (Vo) engineering can introduce lattice defects, thereby significantly increasing the local charge density and enhancing the adsorption of gases, which is an effective strategy to enhance the gas-sensing performance. In this work, we composite BiOCl with a vacancy (Vo-BiOCl) and reduced graphene oxide (rGO) to construct a Vo-BiOCl/rGO heterostructure with enhanced gas adsorption sites. Experimental and theoretical calculations show that Vo can enhance the adsorption of gases and the introduction of rGO forms a high-quality heterostructure with BiOCl, which can effectively reduce the band gap of BiOCl and promote electron transfer, thereby improving the sensitivity of the sensor. Benefiting from above, Vo-BiOCl/rGO achieves the ability to detect low concentrations of NO2/NH3 at room temperature, with high sensitivity (55% at 1 ppm of NO2 and -28% at 1 ppm of NH3), fast response time (40 s at 1 ppm of NO2 and 2 s at 1 ppm of NH3), good stability (over 150 days), and fully recoverable gas sensitivity.

Advances in 2D Materials Based Gas Sensors for Industrial Machine Olfactory Applications

The escalating development and improvement of gas sensing ability in industrial equipment, or "machine olfactory", propels the evolution of gas sensors toward enhanced sensitivity, selectivity, stability, power efficiency, cost-effectiveness, and longevity. Two-dimensional (2D) materials, distinguished by their atomic-thin profile, expansive specific surface area, remarkable mechanical strength, and surface tunability, hold significant potential for addressing the intricate challenges in gas sensing. However, a comprehensive review of 2D materials-based gas sensors for specific industrial applications is absent. This review delves into the recent advances in this field and highlights the potential applications in industrial machine olfaction. The main content encompasses industrial scenario characteristics, fundamental classification, enhancement methods, underlying mechanisms, and diverse gas sensing applications. Additionally, the challenges associated with transitioning 2D material gas sensors from laboratory development to industrialization and commercialization are addressed, and future-looking viewpoints on the evolution of next-generation intelligent gas sensory systems in the industrial sector are prospected.

2D nanomaterials for realization of flexible and wearable gas sensors: A review

Gas sensors are extensively employed for monitoring and detection of hazardous gases and vapors. Many of them are produced on rigid substrates, but flexible and wearable gas sensors are needed for intriguing usage including the internet of things (IoT) and medical devices. The materials with the greatest potential for the fabrication of flexible and wearable gas sensing devices are two-dimensional (2D) semiconducting nanomaterials, which consist of graphene and its substitutes, transition metal dichalcogenides, and MXenes. These types of materials have good mechanical flexibility, high charge carrier mobility, a large area of surface, an abundance of defects and dangling bonds, and, in certain instances adequate transparency and ease of synthesis. In this review, we have addressed the different 2D nonmaterial properties for gas sensing in the context of fabrication of flexible/wearable gas sensors. We have discussed the sensing performance of flexible/wearable gas sensors in various forms such as pristine, composite and noble metal decorated. We believe that content of this review paper is greatly useful for the researchers working in the research area of fabrication of flexible/wearable gas sensors.

Enhanced NO2 Sensitivity of Vertically Stacked van der Waals Heterostructure Gas Sensor and Its Remarkable Electric and Mechanical Tunability

Nanodevices based on van der Waals heterostructures have been predicted, and shown, to have unprecedented operational principles and functionalities that hold promise for highly sensitive and selective gas sensors with rapid response times and minimal power consumption. In this study, we fabricated gas sensors based on vertical MoS2/WS2 van der Waals heterostructures and investigated their gas sensing capabilities. Compared with individual MoS2 or WS2 gas sensors, the MoS2/WS2 van der Waals heterostructure gas sensors are shown to have enhanced sensitivity, faster response times, rapid recovery, and a notable selectivity, especially toward NO2. In combination with a theoretical model, we show that it is important to take into account created trapped states (flat bands) induced by the adsorption of gas molecules, which capture charges and alter the inherent built-in potential of van der Waals heterostructure gas sensors. Additionally, we note that the performance of these MoS2/WS2 heterostructure gas sensors could be further enhanced using electrical gating and mechanical strain. Our findings highlight the importance of understanding the effects of altered built-in potentials arising from gas molecule adsorption induced flat bands, thus offering a way to enhance the gas sensing performance of van der Waals heterostructure gas sensors.

Thickness-Dependent Room-Temperature Optoelectronic Gas Sensing Performances of 2D Nonlayered Indium Oxide Crystals from a Liquid Metal Printing Process

Due to excellent gas sensing performances, such as high responsivity, good selectivity, and long-term stability, two-dimensional (2D) nonlayered metal oxide semiconductors have attracted wide attention. However, their thickness-dependent gas sensing behaviors are rarely investigated, which is critical in the development of practical 2D sensors. In this work, 2D In2O3 crystals with a range of thicknesses are realized by extracting the self-limited oxide layer from the liquid indium droplets in a controlled environment. A strong thickness-dependent optoelectronic NO2 sensing behavior at room temperature is observed. While full reversibility and excellent selectivity toward NO2 are shown despite the thicknesses of 2D In2O3, the 1.9 nm thick In2O3 exhibits a maximum response amplitude (ΔI/Ig = 1300) for 10 ppm of NO2 at room temperature with 365 nm light irradiation, which is about 18, 58, and 810 times larger than those of its 3.1 nm thick, 4.5 nm thick, and 6.2 nm thick counterparts, respectively. The shortest response and recovery times (i.e., 40 s/48 s) are demonstrated for the 1.88 nm thick In2O3 as well. We correlate such a phenomenon with the change in the In2O3 band structure, which is influenced by the thickness of 2D crystals. This work provides in-depth knowledge of the thickness-dependent gas-sensing performances of emerging 2D nonlayered metal oxide crystals, as well as the opportunities to develop next-generation high-performing room-temperature gas sensors.

Design of a SnO2/Zeolite Gas Sensor to Enhance Formaldehyde Sensing Properties: From the Strategy of the Band Gap-Tunable Zeolite

ZSM-5 zeolite is usually used in gas sensors as an auxiliary material to improve the gas-sensitive properties of other semiconductor materials, such as its molecular sieve properties and surface adsorption properties. Here, the gas-sensitive mechanism analysis of SnO2/zeolite gas sensors is studied for the first time based on the perspective of zeolite as a band gap-tunable semiconductor that was reported recently. The gas-sensing mechanism of the zeolite/semiconductor has been modeled based on the surface charge theory, and the work function of the ZSM-5 zeolite has been revealed for the first time. A heterostructure of Ag and ZSM-5 was designed and compounded to tune the band gap of the ZSM-5 zeolite by the ammonia pool effect method. The band gap width of the zeolite decreases from 4.51 to 3.61 eV. A series of characterization techniques were used to analyze the distribution and morphology of silver nanoparticles in zeolites and the variation of the ZSM-5 band gap. Then, SnO2/Ag@ZSM-5 sensors were fabricated, and the gas-sensing performances were measured. The gas-sensing results show that the SnO2/Ag@ZSM-5 sensor has an improved response to formaldehyde in particular compared to the SnO2 sensor. The response value of the SnO2/Ag@ZSM-5 sensor to 70 ppm formaldehyde reached 29.4, which is a 528% improvement compared to the SnO2 sensor. Additionally, the selectivity was greatly enhanced. This study provides a strategy for designing and developing higher-performance gas sensors.

Liquid Shear Exfoliation of MoS2: Preparation, Characterization, and NO2-Sensing Properties

2D materials possess great potential to serve as gas-sensing materials due to their large, specific surface areas and strong surface activities. Among this family, transition metal chalcogenide materials exhibit different properties and are promising candidates for a wide range of applications, including sensors, photodetectors, energy conversion, and energy storage. Herein, a high-shear mixing method has been used to produce multilayered MoS2 nanosheet dispersions. MoS2 thin films were manufactured by vacuum-assisted filtration. The structural morphology of MoS2 was studied using ς-potential, UV-visible, scanning electron microscopy (SEM), atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM), X-ray diffraction (XRD), and Raman spectroscopy (RS). The spectroscopic and microscopic analyses confirm the formation of a high-crystalline MoS2 thin film with good inter-sheet connectivity and relative thickness uniformity. The thickness of the MoS2 layer is measured to be approximately 250 nm, with a nanosheet size of 120 nm ± 40 nm and a number of layers between 6 and 9 layers. Moreover, the electrical characteristics clearly showed that the MoS2 thin film exhibits good conductivity and a linear I-V curve response, indicating good ohmic contact between the MoS2 film and the electrodes. As an example of applicability, we fabricated chemiresistive sensor devices with a MoS2 film as a sensing layer. The performance of the MoS2-chemiresistive sensor for NO2 was assessed by being exposed to different concentrations of NO2 (1 ppm to 10 ppm). This sensor shows a sensibility to low concentrations of 1 ppm, with a response time of 114 s and a recovery time of 420 s. The effect of thin-film thickness and operating temperatures on sensor response was studied. The results show that thinner film exhibits a higher response to NO2; the response decreases as the working temperature increases.

Moisture-Resistant and Highly Selective NH3 Sensor Based on CdS/WS2 Composite Heterojunction

This study reports the synthesis of CdS/WS2 composites via a green and ultra-low-cost hydrothermal method. By controlling the relative mass ratio between WS2 and CdS, an n-n type CdS/WS2 heterostructure, with excellent NH3 gas-sensitive properties, was developed and investigated at room temperature. Compared with pristine WS2 and CdS, the CdS/WS2-40%wt composite exhibited excellent selectivity of more than 4 orders of magnitude for sensing NH3, a very short recovery time of 3 s, and ultrahigh selectivity at room temperature. The large specific surface area of the CdS/WS2 composite increased the active sites for the gas-sensitive reaction. Additionally, the 2D morphology of CdS/WS2 and the heterojunction formed between WS2 and CdS contributed to the improved performance. Anti-humidity interference tests showed that the CdS/WS2 sample remained stable under real-time monitoring of NH3 at different ambient humidity values. This study paves the way for designing high-performance gas sensors operating at room temperature.

Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS2 Thin Films at 150 °C

Two-dimensional MoS₂ is a promising material for applications, including electronics and electrocatalysis. However, scalable methods capable of depositing MoS₂ at low temperatures are scarce. Herein, we present a toolbox of advanced plasma-enhanced atomic layer deposition (ALD) processes, producing wafer-scale polycrystalline MoS₂ films of accurately controlled thickness. Our ALD processes are based on two individually controlled plasma exposures, one optimized for deposition and the other for modification. In this way, film properties can be tailored toward different applications at a very low deposition temperature of 150 °C. For the modification step, either H₂ or Ar plasma can be used to combat excess sulfur incorporation and crystallize the films. Using H₂ plasma, a higher degree of crystallinity compared with other reported low-temperature processes is achieved. Applying H₂ plasma steps periodically instead of every ALD cycle allows for control of the morphology and enables deposition of smooth, polycrystalline MoS₂ films. Using an Ar plasma instead, more disordered MoS₂ films are deposited, which show promise for the electrochemical hydrogen evolution reaction. For electronics, our processes enable control of the carrier density from 6 × 10¹⁶ to 2 × 10²¹ cm^-3 with Hall mobilities up to 0.3 cm² V^-1 s^-1. The process toolbox forms a basis for rational design of low-temperature transition metal dichalcogenide deposition processes compatible with a range of substrates and applications.

Field Effect Transistor Gas Sensors Based on Mechanically Exfoliated Van der Waals Materials

The high surface-to-volume ratio and flatness of mechanically exfoliated van der Waals (vdW) layered materials make them an ideal platform to investigate the Langmuir absorption model. In this work, we fabricated field effect transistor gas sensors, based on a variety of mechanically exfoliated vdW materials, and investigated their electrical field-dependent gas sensing properties. The good agreement between the experimentally extracted intrinsic parameters, such as equilibrium constant and adsorption energy, and theoretically predicted values suggests validity of the Langmuir absorption model for vdW materials. Moreover, we show that the device sensing behavior depends crucially on the availability of carriers, and giant sensitivities and strong selectivity can be achieved at the sensitivity singularity. Finally, we demonstrate that such features provide a fingerprint for different gases to quickly detect and differentiate between low concentrations of mixed hazardous gases using sensor arrays.

A review of piezoelectric MEMS sensors and actuators for gas detection application

Piezoelectric microelectromechanical system (piezo-MEMS)-based mass sensors including the piezoelectric microcantilevers, surface acoustic waves (SAW), quartz crystal microbalance (QCM), piezoelectric micromachined ultrasonic transducer (PMUT), and film bulk acoustic wave resonators (FBAR) are highlighted as suitable candidates for highly sensitive gas detection application. This paper presents the piezo-MEMS gas sensors' characteristics such as their miniaturized structure, the capability of integration with readout circuit, and fabrication feasibility using multiuser technologies. The development of the piezoelectric MEMS gas sensors is investigated for the application of low-level concentration gas molecules detection. In this work, the various types of gas sensors based on piezoelectricity are investigated extensively including their operating principle, besides their material parameters as well as the critical design parameters, the device structures, and their sensing materials including the polymers, carbon, metal-organic framework, and graphene.

Highly Selective H2S Gas Sensor Based on Ti3C2Tx MXene-Organic Composites

Cost-effective and high-performance H₂S sensors are required for human health and environmental monitoring. 2D transition-metal carbides and nitrides (MXenes) are appealing candidates for gas sensing due to good conductivity and abundant surface functional groups but have been studied primarily for detecting NH₃ and VOCs, with generally positive responses that are not highly selective to the target gases. Here, we report on a negative response of pristine Ti₃C₂T_x thin films for H₂S gas sensing (in contrast to the other tested gases) and further optimization of the sensor performance using a composite of Ti₃C₂T_x flakes and conjugated polymers (poly[3,6-diamino-10-methylacridinium chloride-co-3,6-diaminoacridine-squaraine], PDS-Cl) with polar charged nitrogen. The composite, preserving the high selectivity of pristine Ti₃C₂T_x, exhibits an H₂S sensing response of 2% at 5 ppm (a thirtyfold sensing enhancement) and a low limit of detection of 500 ppb. In addition, our density functional theory calculations indicate that the mixture of MXene surface functional groups needs to be taken into account to describe the sensing mechanism and the selectivity of the sensor in agreement with the experimental results. Thus, this report extends the application range of MXene-based composites to H₂S sensors and deepens the understanding of their gas sensing mechanisms.

Detection of H2S, HF and H2 pollutant gases on the surface of penta-PdAs2 monolayer using DFT approach

In this research, the adsorption of targeted noxious gases like H₂S, HF and H₂ on penta-PdAs₂ monolayer are deeply studied by means of the density functional theory (DFT). After the capturing of three kind of pollutant gases (H₂S, HF and H₂), it is observed that, the electronic properties are slightly affected from the pristine one. In all cases, the physisorption interaction found with adsorption energy of - 0.49, - 0.39 and - 0.16 eV for H₂S, HF and H₂ gases, respectively. Which is exposed that H₂S gas strongly absorbed on penta-PdAs₂ nanosheet. In case of HF (H₂) gas adsorbed systems, the obtained charge transfer is + 0.111 e (+ 0.037 e), revealed that the electrons are going to PdAs₂ nanosheet from the HF (H₂) molecules. Further, under the non-equilibrium Green's function (NEGF) theory, the IV response and sensitivity of absorbed H₂S, HF and H₂ have been discussed. The results demonstrate that the H₂S molecules on PdAs₂ has suitable adsorption strength and explicit charge transfer compared with other targeted molecules. Hence, our novel findings of H₂S, HF and H₂ targeted gas sensing on penta-PdAs₂ nanosheet might provide reference-line to design modern gas sensor device at the nano-scale.

Progress and Perspectives of Single-Atom Catalysts for Gas Sensing

Single-atom catalysts (SACs) attract extensive attention in the field of heterogeneous catalysis in recent years due to the maximum atom utilization and unique physical and chemical properties. The gas sensing is actually a heterogeneous catalysis process but the SACs are new to this area. Although SACs show huge potential in gas sensing, the SACs gas sensing area currently is still at the infancy stage. This work critically reviews the recent advances and current status of single-atom gas sensing materials. General synthesis routes, characterization methods, and sensing performance indexes are introduced. At the end, the challenges and future prospects on SACs gas sensing are presented from the authors' perspectives. This work is anticipated to provide insights and guideline for the chemical sensing community.

Room-Temperature Semiconductor Gas Sensors: Challenges and Opportunities

Our demand for ubiquitous and reliable gas detection is spurring the design of intelligent and enabling gas sensors for the next-generation Internet of Things and Artificial Intelligence. The desire to introduce gas sensors everywhere is fueled by opportunities to create room-temperature semiconductor gas sensors with ultralow power consumption. In this Perspective, we provide an overview of the recent achievement of room-temperature gas sensors that have been translated from the advances in the design of the chemical and physical properties of low-dimensional semiconductor nanomaterials. The emergence of solution-processable nanomaterials opens up remarkable opportunities to integrate into high-performance and flexible room-temperature gas sensors by using low-temperature, large-area, solution-based methods instead of costly, high-vacuum, high-temperature device manufacturing processes. We review the fundamental factors which affect the receptor and transducer functions of semiconductor gas sensors. We also discuss challenges that must be addressed in the move to the continuous miniaturization and evolution of semiconductor gas sensors.

Recent Advances in Photo-Activated Chemical Sensors

Gas detectors have attracted considerable attention for monitoring harmful gases and air pollution because of industry development and the ongoing interest in human health. On the other hand, conventional high-temperature gas detectors are unsuitable for safely detecting harmful gases at high activation temperatures. Photo-activated gas detectors improve gas sensing performance at room temperature and enable low-power operation. This review presents a timely overview of photo-activated gas detectors that use illuminated light instead of thermal energy. Illuminated light assists in gas detection and is classified as visible or ultraviolet light. The research on photo-activated gas detectors is organized according to the type of gas that can be intensively detected. In addition, a development strategy for advancing photo-activated gas detectors is discussed.

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

During the last few decades, the microelectronics industry has actively been investigating the potential for the functional integration of semiconductor-based devices beyond digital logic and memory, which includes RF and analog circuits, biochips, and sensors, on the same chip. In the case of gas sensor integration, it is necessary that future devices can be manufactured using a fabrication technology which is also compatible with the processes applied to digital logic transistors. This will likely involve adopting the mature complementary metal oxide semiconductor (CMOS) fabrication technique or a technique which is compatible with CMOS due to the inherent low costs, scalability, and potential for mass production that this technology provides. While chemiresistive semiconductor metal oxide (SMO) gas sensors have been the principal semiconductor-based gas sensor technology investigated in the past, resulting in their eventual commercialization, they need high-temperature operation to provide sufficient energies for the surface chemical reactions essential for the molecular detection of gases in the ambient. Therefore, the integration of a microheater in a MEMS structure is a requirement, which can be quite complex. This is, therefore, undesirable and room temperature, or at least near-room temperature, solutions are readily being investigated and sought after. Room-temperature SMO operation has been achieved using UV illumination, but this further complicates CMOS integration. Recent studies suggest that two-dimensional (2D) materials may offer a solution to this problem since they have a high likelihood for integration with sophisticated CMOS fabrication while also providing a high sensitivity towards a plethora of gases of interest, even at room temperature. This review discusses many types of promising 2D materials which show high potential for integration as channel materials for digital logic field effect transistors (FETs) as well as chemiresistive and FET-based sensing films, due to the presence of a sufficiently wide band gap. This excludes graphene from this review, while recent achievements in gas sensing with graphene oxide, reduced graphene oxide, transition metal dichalcogenides (TMDs), phosphorene, and MXenes are examined.

Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry

Two-dimensional transition metal dichalcogenides, such as MoS₂, are intensely studied for applications in electronics. However, the difficulty of depositing large-area films of sufficient quality under application-relevant conditions remains a major challenge. Herein, we demonstrate deposition of polycrystalline, wafer-scale MoS₂, TiS₂, and WS₂ films of controlled thickness at record-low temperatures down to 100 °C using plasma-enhanced atomic layer deposition. We show that preventing excess sulfur incorporation from H₂S-based plasma is the key to deposition of crystalline films, which can be achieved by adding H₂ to the plasma feed gas. Film composition, crystallinity, growth, morphology, and electrical properties of MoS _x films prepared within a broad range of deposition conditions have been systematically characterized. Film characteristics are correlated with results of field-effect transistors based on MoS₂ films deposited at 100 °C. The capability to deposit MoS₂ on poly(ethylene terephthalate) substrates showcases the potential of our process for flexible devices. Furthermore, the composition control achieved by tailoring plasma chemistry is relevant for all low-temperature plasma-enhanced deposition processes of metal chalcogenides.

High-Performance Room-Temperature Conductometric Gas Sensors: Materials and Strategies

Chemiresistive sensors have gained increasing interest in recent years due to the necessity of low-cost, effective, high-performance gas sensors to detect volatile organic compounds (VOC) and other harmful pollutants. While most of the gas sensing technologies rely on the use of high operation temperatures, which increase usage cost and decrease efficiency due to high power consumption, a particular subset of gas sensors can operate at room temperature (RT). Current approaches are aimed at the development of high-sensitivity and multiple-selectivity room-temperature sensors, where substantial research efforts have been conducted. However, fewer studies presents the specific mechanism of action on why those particular materials can work at room temperature and how to both enhance and optimize their RT performance. Herein, we present strategies to achieve RT gas sensing for various materials, such as metals and metal oxides (MOs), as well as some of the most promising candidates, such as polymers and hybrid composites. Finally, the future promising outlook on this technology is discussed.

Highly sensitive and low-power consumption metalloporphyrin-based junctions for COx detection with excellent recovery

The development of cost-effective and eco-friendly sensor materials is needed to realize the application of detectors in daily life-such as in the internet of things. In this regard, monitoring air pollutants such as carbon monoxide (CO) and carbon dioxide (CO₂), mainly emitted by anthropogenic sources from daily human activities, is of great importance. In particular, developing a susceptible and portable CO₂ sensor raises a dilemma because of the chemical inertness and non-polarity of CO₂ molecules. We find that porphyrin-based materials, exploited by nature in biological systems, are a playground to search for such sensor materials. Using density functional non-equilibrium Green's function formalism, we fully screen all 3d metalloporphyrin (MPor) based devices to find efficient CO and CO₂ gas sensors. Our detailed analysis of the adsorption energy, molecular orbitals, transmission spectra, sensitivity, and recovery time reveals that the nature of central M alters the efficiency of MPor gas detectors. We find that CO and CO₂ can be monitored using, respectively, CoPor- and TiPor-based devices. The estimated sensitivity is around 100%, along with a fast recovery time at very low bias voltages (V ≥ 0.5 V), which turn metalloporphyrins into promising candidates for the widespread development of enhanced CO and CO₂ sensors awaiting further experimental validations.

Gate-Tuned Gas Molecule Sensitivity of a Two-Dimensional Semiconductor

In this work, we develop a gate-tunable gas sensor based on a MoS2/hBN heterostructure field effect transistor. Through experimental measurements and numerical simulations, we systematically reveal a principle that relates the concentration of the target gas and sensing signals (ΔI/I0) as a function of gate bias. Because a linear relationship between ΔI/I0 and the gas concentration guarantees reliable sensor operation, the optimal gate bias condition for linearity was investigated. Taking NO2 and NH3 as target molecules, it is clarified that the bias condition greatly depends on the electron accepting/donating nature of the gas. The effects of the bandgap and polarity of the transition metal dichalcogenides (TMDC) channel are also discussed. In order to achieve linearly increasing signals that are stable with respect to the gas concentration, a sufficiently large VBG within VBG > 0 is required. We expect this work will shed light on a way to precisely design reliable semiconducting gas sensors based on the characteristics of TMDC and target gas molecules.

Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization

The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.

Gas sensing devices based on two-dimensional materials: a review

Gas sensors have been widely utilized penetrating every aspect of our daily lives, such as medical industry, environmental safety testing, and the food industry. In recent years, two-dimensional (2D) materials have shown promising potential and prominent advantages in gas sensing technology, due to their unique physical and chemical properties. In addition, the ultra-high surface-to-volume ratio and surface activity of the 2D materials with atomic-level thickness enables enhanced absorption and sensitivity. Till now, different gas sensing techniques have been developed to further boost the performance of 2D materials-based gas sensors, such as various surface functionalization and Van der Waals heterojunction formation. In this article, a comprehensive review of advanced gas sensing devices is provided based on 2D materials, focusing on two sensing principles of charge-exchange and surface oxygen ion adsorption. Six types of typical gas sensor devices based on 2D materials are introduced with discussion of latest research progress and future perspectives.

High-performance, self-powered flexible MoS2 photodetectors with asymmetric van der Waals gaps

With an urgent demand for low-energy-consumption and wearable devices, it is desirable to find an easy, effective, and low-cost method to fabricate self-powered flexible photodetectors with simple configurations and high-performance. Self-powered photodetectors are normally fabricated based on either two different materials or the same material in contact with two different metal electrodes. Here, a flexible MoS₂ photodetector with the same Au electrodes was fabricated on a polyethylene terephthalate (PET) substrate which exhibits self-powered properties. To our knowledge, its configuration is the simplest, and the fabrication process is easy to implement. At a bias of 0 V, the photodetector exhibits a high responsivity of 431 mA W^-1, a short response/recovery time of 40 ms/40 ms, and excellent flexibility. Compared with those at a bias of 2 V, a dark current is sufficiently suppressed, and the response/recovery speed is significantly improved. It is found that the driving force of the self-powered photodetector is provided by the asymmetric Schottky barriers originating from the spontaneous generation of two van der Waals gaps with different widths. The asymmetric barriers exist stably at the interfaces between the 2D material and Au electrodes as further observed for ReS₂ or GaSe flakes, which show the generality of asymmetric Schottky barriers between the 2D material and Au electrodes. The discovery here thus gives a new way to generate asymmetric Schottky barriers and develop high-performance self-powered photodetectors.

Atomic-Layer-Deposition-Based 2D Transition Metal Chalcogenides: Synthesis, Modulation, and Applications

Transition metal chalcogenides (TMCs) are a large family of 2D materials with different properties, and are promising candidates for a wide range of applications such as nanoelectronics, sensors, energy conversion, and energy storage. In the research of new materials, the development and investigation of industry-compatible synthesis techniques is of key importance. In this respect, it is important to study 2D TMC materials synthesized by the atomic layer deposition (ALD) technique, which is widely applied in industries. In addition to the synthesis of 2D TMCs, ALD is used to modulate the characteristic of 2D TMCs such as their carrier density and morphology. So far, the improvement of thin film uniformity without oxidation and the synthesis of low-dimensional nanomaterials on 2D TMCs have been the research focus. Herein, the synthesis and modulation of 2D TMCs by ALD is described, and the characteristics of ALD-based TMCs used in nanoelectronics, sensors, and energy applications are discussed.

Advanced Strategies to Improve Performances of Molybdenum-Based Gas Sensors

Molybdenum-based materials have been intensively investigated for high-performance gas sensor applications. Particularly, molybdenum oxides and dichalcogenides nanostructures have been widely examined due to their tunable structural and physicochemical properties that meet sensor requirements. These materials have good durability, are naturally abundant, low cost, and have facile preparation, allowing scalable fabrication to fulfill the growing demand of susceptible sensor devices. Significant advances have been made in recent decades to design and fabricate various molybdenum oxides- and dichalcogenides-based sensing materials, though it is still challenging to achieve high performances. Therefore, many experimental and theoretical investigations have been devoted to exploring suitable approaches which can significantly enhance their gas sensing properties. This review comprehensively examines recent advanced strategies to improve the nanostructured molybdenum-based material performance for detecting harmful pollutants, dangerous gases, or even exhaled breath monitoring. The summary and future challenges to advance their gas sensing performances will also be presented.

Hollow Cu2O nanospheres loaded with MoS2/reduced graphene oxide nanosheets for ppb-level NO2 detection at room temperature

Low energy consumption, high sensing response and high selectivity are the important indexes of metal oxide semiconductor (MOS) gas sensors applied in many application fields. However, the high working temperature and poor selectivity of MOS sensors severely restrict their scope of application in the Internet of Things (IoT). Herein, ternary MoS₂-rGO-Cu₂O (MG-Cu) composites with boosting ppb-level NO₂ sensing characteristics are synthesized by combining hydrothermal method and soft-template method. The optimal proportion of MoS₂, rGO and Cu₂O is systematically explored. The SEM and TEM analyses confirm the hollow Cu₂O is anchored on the surface of MG. The gas sensing tests illustrate that optimum composite sensor exhibits highest response to 500 ppb NO₂ at room temperature, which is 11 and 5 times higher compared to pure MoS₂ and binary MG15, respectively. Besides, it displays excellent selectivity and superior stability. The synergy of shell-structure with abundant mesoporous, heterojunction construction and enhanced conductivity lead to the enhanced sensing performance of ternary sensor.

Gas sensing materials roadmap

Gas sensor technology is widely utilized in various areas ranging from home security, environment and air pollution, to industrial production. It also hold great promise in non-invasive exhaled breath detection and an essential device in future internet of things. The past decade has witnessed giant advance in both fundamental research and industrial development of gas sensors, yet current efforts are being explored to achieve better selectivity, higher sensitivity and lower power consumption. The sensing layer in gas sensors have attracted dominant attention in the past research. In addition to the conventional metal oxide semiconductors, emerging nanocomposites and graphene-like two-dimensional materials also have drawn considerable research interest. This inspires us to organize this comprehensive 2020 gas sensing materials roadmap to discuss the current status, state-of-the-art progress, and present and future challenges in various materials that is potentially useful for gas sensors.

Dynamic Reaction Mechanism of P-N-Switched H2-Sensing Performance on a Pt-Decorated TiO2 Surface

Pt decoration is known to be one of the most promising strategies to enhance the performance of TiO₂ hydrogen gas sensors, while the effect of Pt-decorating concentration on the sensing performance of TiO₂ and the specific interaction between Pt and TiO₂ have not been fully investigated. Here, a series of TiO₂ nanoarray thin films with differing amounts of Pt decorated (Pt/TiO₂) is fabricated, and the H₂-sensing performance is evaluated. A switch in the response from P-type to N-type is observed with increasing Pt decoration. The response additionally depends on the H₂ concentration: resistance increases in low H₂ concentrations and decreases in hydrogen concentrations higher than 40 ppm. This is explained by the competitive adsorption of hydrogen between the Pt nanoparticles (Pt NPs) and the exposed TiO₂ surface. The preference for H₂ adsorption and splitting between Pt and TiO₂ is established by DFT calculations. Humidity brings preferential adsorption of H₂O on the surface of Pt, which affects the following adsorption and splitting of H₂, thus resulting in a P-N switch of the sensing performance. The detailed dynamic reaction process is described according to the findings.

Recent Development of Gas Sensing Platforms Based on 2D Atomic Crystals

Sensors, capable of detecting trace amounts of gas molecules or volatile organic compounds (VOCs), are in great demand for environmental monitoring, food safety, health diagnostics, and national defense. In the era of the Internet of Things (IoT) and big data, the requirements on gas sensors, in addition to sensitivity and selectivity, have been increasingly placed on sensor simplicity, room temperature operation, ease for integration, and flexibility. The key to meet these requirements is the development of high-performance gas sensing materials. Two-dimensional (2D) atomic crystals, emerged after graphene, have demonstrated a number of attractive properties that are beneficial to gas sensing, such as the versatile and tunable electronic/optoelectronic properties of metal chalcogenides (MCs), the rich surface chemistry and good conductivity of MXenes, and the anisotropic structural and electronic properties of black phosphorus (BP). While most gas sensors based on 2D atomic crystals have been incorporated in the setup of a chemiresistor, field-effect transistor (FET), quartz crystal microbalance (QCM), or optical fiber, their working principles that involve gas adsorption, charge transfer, surface reaction, mass loading, and/or change of the refractive index vary from material to material. Understanding the gas-solid interaction and the subsequent signal transduction pathways is essential not only for improving the performance of existing sensing materials but also for searching new and advanced ones. In this review, we aim to provide an overview of the recent development of gas sensors based on various 2D atomic crystals from both the experimental and theoretical investigations. We will particularly focus on the sensing mechanisms and working principles of the related sensors, as well as approaches to enhance their sensing performances. Finally, we summarize the whole article and provide future perspectives for the development of gas sensors with 2D materials.

Strategy and Future Prospects to Develop Room-Temperature-Recoverable NO2 Gas Sensor Based on Two-Dimensional Molybdenum Disulfide

Nitrogen dioxide (NO2), a hazardous gas with acidic nature, is continuously being liberated in the atmosphere due to human activity. The NO2 sensors based on traditional materials have limitations of high-temperature requirements, slow recovery, and performance degradation under harsh environmental conditions. These limitations of traditional materials are forcing the scientific community to discover future alternative NO2 sensitive materials. Molybdenum disulfide (MoS2) has emerged as a potential candidate for developing next-generation NO2 gas sensors. MoS2 has a large surface area for NO2 molecules adsorption with controllable morphologies, facile integration with other materials and compatibility with internet of things (IoT) devices. The aim of this review is to provide a detailed overview of the fabrication of MoS2 chemiresistance sensors in terms of devices (resistor and transistor), layer thickness, morphology control, defect tailoring, heterostructure, metal nanoparticle doping, and through light illumination. Moreover, the experimental and theoretical aspects used in designing MoS2-based NO2 sensors are also discussed extensively. Finally, the review concludes the challenges and future perspectives to further enhance the gas-sensing performance of MoS2. Understanding and addressing these issues are expected to yield the development of highly reliable and industry standard chemiresistance NO2 gas sensors for environmental monitoring.

Selective Toluene Detection with Mo2CTx MXene at Room Temperature

MXenes are a promising class of two-dimensional materials with several potential applications, including energy storage, catalysis, electromagnetic interference shielding, transparent electronics, and sensors. Here, we report a novel Mo₂CT_x MXene sensor for the successful detection of volatile organic compounds (VOCs). The proposed sensor is a chemiresistive device fabricated on a Si/SiO₂ substrate using photolithography. The impact of various MXene process conditions on the performance of the sensor is evaluated. The VOCs, such as toluene, benzene, ethanol, methanol, and acetone, are studied at room temperature with varying concentrations. Under optimized conditions, the sensor demonstrates a detection limit of 220 ppb and a sensitivity of 0.0366 Ω/ppm at a toluene concentration of 140 ppm. It exhibits an excellent selectivity toward toluene against the other VOCs. Ab initio simulations demonstrate selectivity toward toluene in line with the experimental results.

Synthesis of ZnO Hollow Microspheres and Analysis of Their Gas Sensing Properties for n-Butanol

ZnO hollow microspheres with a diameter of approximately 1.4 μm were successfully synthesized by a facile one-step chemical precipitation method using trisodium citrate dihydrate as a morphology control agent. The ZnO hollow microspheres consisted of nanoplates and had good dispersibility. Control experiments revealed that trisodium citrate dihydrate played an important role in regulating the morphologies of ZnO products. The morphology of the ZnO product evolved from nanowires to hollow microspheres with the addition of trisodium citrate dihydrate. The sensor response of ZnO hollow microspheres toward 100 ppm n-butanol reached 86.6 at the optimum operating temperature of 340 °C, which was approximately three times higher than that of ZnO nanowires. In addition, the ZnO hollow microspheres also displayed good selectivity and long-term work stability toward n-butanol. The excellent gas sensing performance of ZnO hollow microspheres may be ascribed to the unique hollow sphere structure with high exposed polar crystal surface.

WS2/GeSe/WS2 Bipolar Transistor-Based Chemical Sensor with Fast Response and Recovery Times

Vertical heterostructures of transition-metal dichalcogenide semiconductors have attracted considerable attention and offer new opportunities in electronics and optoelectronics for the development of innovative and multifunctional devices. Here, we designed a novel and compact vertically stacked two-dimensional (2D) n-WS₂/p-GeSe/n-WS₂ van der Waals (vdW) heterojunction bipolar transistor (2D-HBT)-based chemical sensor. The performance of the 2D-HBT vdW heterostructure with different base thicknesses is investigated by two configurations, namely, common-emitter and common-base configurations. The 2D-HBT vdW heterostructure exhibited intriguing electrical characteristics of current amplification with large gains of α ≈ 1.11 and β ≈ 20.7. In addition, 2D-HBT-based devices have been investigated as chemical sensors for the detection of NH₃ and O₂ gases at room temperature. The effects of different environments, such as air, vacuum, O₂, and NH₃, were also analyzed in dark conditions, and with a light of 633 nm wavelength, ultrahigh sensitivity and fast response and recovery times (6.55 and 16.2 ms, respectively) were observed. These unprecedented outcomes have huge potential in modern technology in the development of low-power amplifiers and gas sensors.

Enhanced NO2 Sensitivity in Schottky-Contacted n-Type SnS2 Gas Sensors

Layered materials are highly attractive in gas sensor research due to their extraordinary electronic and physicochemical properties. The development of cheaper and faster room-temperature detectors with high sensitivities especially in the parts per billion level is the main challenge in this rapidly developing field. Here, we show that sensitivity to NO₂ (S) can be greatly improved by at least two orders of magnitude using an n-type electrode metal. Unconventionally for such devices, the ln(S) follows the classic Langmuir isotherm model rather than S as is for a p-type electrode metal. Excellent device sensitivities, as high as 13,000% for 9 ppm and 97% for 1 ppb NO₂, are achieved with Mn electrodes at room temperature, which can be further tuned and enhanced with the application of a bias. Long-term stability, fast recovery, and strong selectivity toward NO₂ are also demonstrated. Such impressive features provide a real solution for designing a practical high-performance layered material-based gas sensor.

MoS2 Nanosheets Sensitized with Quantum Dots for Room-Temperature Gas Sensors

The Internet of things for environment monitoring requires high performance with low power-consumption gas sensors which could be easily integrated into large-scale sensor network. While semiconductor gas sensors have many advantages such as excellent sensitivity and low cost, their application is limited by their high operating temperature. Two-dimensional (2D) layered materials, typically molybdenum disulfide (MoS₂) nanosheets, are emerging as promising gas-sensing materials candidates owing to their abundant edge sites and high in-plane carrier mobility. This work aims to overcome the sluggish and weak response as well as incomplete recovery of MoS₂ gas sensors at room temperature by sensitizing MoS₂ nanosheets with PbS quantum dots (QDs). The huge amount of surface dangling bonds of QDs enables them to be ideal receptors for gas molecules. The sensitized MoS₂ gas sensor exhibited fast and recoverable response when operated at room temperature, and the limit of NO₂ detection was estimated to be 94 ppb. The strategy of sensitizing 2D nanosheets with sensitive QD receptors may enhance receptor and transducer functions as well as the utility factor that determine the sensor performance, offering a powerful new degree of freedom to the surface and interface engineering of semiconductor gas sensors.