1
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Lin HA, Weng YH, Mulia T, Liu CL, Lin YC, Yu YY, Chen WC. Electrical Double-Layer Transistors Comprising Block Copolymer Electrolytes for Low-Power-Consumption Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:25042-25052. [PMID: 38706304 PMCID: PMC11103659 DOI: 10.1021/acsami.4c01959] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Revised: 04/24/2024] [Accepted: 04/26/2024] [Indexed: 05/07/2024]
Abstract
Electrical double-layer transistors (EDLTs) have received extensive research attention owing to their exciting advantages of low working voltage, high biocompatibility, and sensitive interfacial properties in ultrasensitive portable sensing applications. Therefore, it is of great interest to reduce photodetectors' operating voltage and power consumption by utilizing photo-EDLT. In this study, a series of block copolymers (BCPs) of poly(4-vinylpyridine)-block-poly(ethylene oxide) (P4VP-b-PEO) with different compositions were applied to formulate polyelectrolyte with indigo carmine salt in EDLT. Accordingly, PEO conduces ion conduction in the BCP electrolyte and enhances the carrier transport capability in the semiconducting channel; P4VP boosts the photocurrent by providing charge-trapping sites during light illumination. In addition, the severe aggregation of PEO is mitigated by forming a BCP structure with P4VP, enhancing the stability and photoresponse of the photo-EDLT. By optimizing the BCP composition, EDLT comprising P4VP16k-b-PEO5k and indigo carmine provides the highest specific detectivity of 2.1 × 107 Jones, along with ultralow power consumptions of 0.59 nW under 450 nm light illumination and 0.32 pW under dark state. The results indicate that photo-EDLT comprising the BCP electrolyte is a practical approach to reducing phototransistors' operating voltage and power consumption.
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Affiliation(s)
- Hung-An Lin
- Department
of Materials Engineering, Ming Chi University
of Technology, New Taipei
City 24301, Taiwan
| | - Yi-Hsun Weng
- Department
of Chemical Engineering, National Taiwan
University, Taipei 10617, Taiwan
| | - Tiffany Mulia
- Department
of Chemical Engineering, National Taiwan
University, Taipei 10617, Taiwan
| | - Cheng-Liang Liu
- Advanced
Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Department
of Materials Science and Engineering, National
Taiwan University, Taipei 10617, Taiwan
| | - Yan-Cheng Lin
- Advanced
Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Department
of Chemical Engineering, National Cheng
Kung University, Tainan 70101, Taiwan
| | - Yang-Yen Yu
- Department
of Materials Engineering, Ming Chi University
of Technology, New Taipei
City 24301, Taiwan
| | - Wen-Chang Chen
- Department
of Materials Engineering, Ming Chi University
of Technology, New Taipei
City 24301, Taiwan
- Advanced
Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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2
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Neu YC, Lin YS, Weng YH, Chen WC, Liu CL, Lin BH, Lin YC, Chen WC. Reversible Molecular Conformation Transitions of Smectic Liquid Crystals for Light/Bias-Gated Transistor Memory. ACS APPLIED MATERIALS & INTERFACES 2024; 16:7500-7511. [PMID: 38300744 PMCID: PMC10875644 DOI: 10.1021/acsami.3c16882] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Revised: 01/17/2024] [Accepted: 01/22/2024] [Indexed: 02/03/2024]
Abstract
In recent years, organic photonic field-effect transistors have made remarkable progress with the rapid development of conjugated polycrystalline materials. Liquid crystals, with their smooth surface, defined layer thickness, and crystalline structures, are commonly used for these advantages. In this work, a series of smectic liquid crystalline molecules, 2,9-didecyl-dinaphtho-thienothiophene (C10-DNTT), 2,7-didecyl-benzothieno-benzothiopene (C10-BTBT), 3,9-didecyl-dinaphtho-thiophene (C10-DNT), and didecyl-sexithiophene (C10-6T), have been used in photonic transistor memory, functioning as both hole-transport channels and electron traps to investigate systematically the reasons and mechanisms behind the memory behavior of smectic liquid crystals. After thermal annealing, C10-BTBT and C10-6T/C10-DNTT are homeotropically aligned from the smectic A and smectic X phases, respectively. The 3D-ordered structure of these smectic-aligned crystals contributed to efficient photowriting and electrical erasing processes. Among them, the device performance of C10-BTBT was particularly significant, with a memory window of 21 V. The memory ratio could reach 1.5 × 106 and maintain a memory ratio of over 3 orders after 10,000 s, contributing to its smectic A structure. Through the research, we confirmed the memory and light/bias-gated behaviors of these smectic liquid crystalline molecules, attributing them to reversible molecular conformation transitions and the inherent structural inhomogeneity inside the polycrystalline channel layer.
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Affiliation(s)
- Yi-Chieh Neu
- Department
of Chemical Engineering, National Taiwan
University, Taipei 10617, Taiwan
| | - Yi-Sa Lin
- Department
of Chemical Engineering, National Taiwan
University, Taipei 10617, Taiwan
| | - Yi-Hsun Weng
- Department
of Chemical Engineering, National Taiwan
University, Taipei 10617, Taiwan
| | - Wei-Cheng Chen
- Department
of Chemical Engineering, National Taiwan
University, Taipei 10617, Taiwan
| | - Cheng-Liang Liu
- Department
of Materials Science and Engineering, National
Taiwan University, Taipei 10617, Taiwan
- Advanced
Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Bi-Hsuan Lin
- National
Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Yan-Cheng Lin
- Advanced
Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Department
of Chemical Engineering, National Cheng
Kung University, Tainan 70101, Taiwan
| | - Wen-Chang Chen
- Department
of Chemical Engineering, National Taiwan
University, Taipei 10617, Taiwan
- Advanced
Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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3
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Jeon Y, Kim S, Seo J, Yoo H. Contributions of Light to Novel Logic Concepts Using Optoelectronic Materials. SMALL METHODS 2024; 8:e2300391. [PMID: 37231569 DOI: 10.1002/smtd.202300391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2023] [Revised: 04/29/2023] [Indexed: 05/27/2023]
Abstract
Instead of the current method of transmitting voltage or current signals in electronic circuit operation, light offers an alternative to conventional logic, allowing for the implementation of new logic concepts through interaction with light. This manuscript examines the use of light in implementing new logic concepts as an alternative to traditional logic circuits and as a future technology. This article provides an overview of how to implement logic operations using light rather than voltage or current signals using optoelectronic materials such as 2D materials, metal-oxides, carbon structures, polymers, small molecules, and perovskites. This review covers the various technologies and applications of using light to dope devices, implement logic gates, control logic circuits, and generate light as an output signal. Recent research on logic and the use of light to implement new functions is summarized. This review also highlights the potential of optoelectronic logic for future technological advancements.
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Affiliation(s)
- Yunchae Jeon
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
| | - Somi Kim
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
| | - Juhyung Seo
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
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4
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Ercan E, Lin YC, Yang YF, Lin BH, Shimizu H, Inagaki S, Higashihara T, Chen WC. Tailoring Wavelength-Adaptive Visual Neuroplasticity Transitions of Synaptic Transistors Comprising Rod-Coil Block Copolymers for Dual-Mode Photoswitchable Learning/Forgetting Neural Functions. ACS APPLIED MATERIALS & INTERFACES 2023; 15:46157-46170. [PMID: 37728642 DOI: 10.1021/acsami.3c11441] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/21/2023]
Abstract
The vision-inspired artificial neural network based on optical synapses has drawn a tremendous amount of attention for emulating biological senses. Although photoexcitation-induced synaptic functionalities have been widely studied, optical habituation via the photoinhibitory pathway is yet to be demonstrated for sophisticated biomimetic visual adaptive systems. Here, the first optical neuromorphic block copolymer (BCP) phototransistor is demonstrated as an all-optical operation responding to various wavelengths, fulfilling photoassisted dynamic learning/forgetting cycles via optical potentiation without gate bias. The polyfluorene BCPs were precisely designed to enable wavelength-adaptive responses, benefiting from interfacial semiconductor/electret morphology and the crystallinity/electron affinity of the BCPs. Notably, this is the first work to simultaneously exhibit fully light-controlled short- and long-term memory based on organic material systems. The device presents a high current contrast above 100-fold and long-term retention over 104 s. As a proof-of-concept for neural networks, a 6 × 6 array of photosynapses performed outstanding visual pattern learning/forgetting with high accuracy. This study exploits the design strategy of a conjugated BCP electret to unleash the full potential of wavelength-adaptive visual neuroplasticity transitions. It provides an effective architecture for designing high-performance and high-storage capacity required applications in next-generation neuromorphic systems.
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Affiliation(s)
- Ender Ercan
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Yan-Cheng Lin
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Yun-Fang Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Bi-Hsuan Lin
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Hiroya Shimizu
- Department of Organic Materials Science, Graduate School of Organic Materials Science, Yamagata University, Yonezawa 992-8510, Yamagata, Japan
| | - Shin Inagaki
- Department of Organic Materials Science, Graduate School of Organic Materials Science, Yamagata University, Yonezawa 992-8510, Yamagata, Japan
| | - Tomoya Higashihara
- Department of Organic Materials Science, Graduate School of Organic Materials Science, Yamagata University, Yonezawa 992-8510, Yamagata, Japan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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5
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He L, Yang Z, Wang Z, Leydecker T, Orgiu E. Organic multilevel (opto)electronic memories towards neuromorphic applications. NANOSCALE 2023. [PMID: 37378458 DOI: 10.1039/d3nr01311a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2023]
Abstract
In the past decades, neuromorphic computing has attracted the interest of the scientific community due to its potential to circumvent the von Neumann bottleneck. Organic materials, owing to their fine tunablility and their ability to be used in multilevel memories, represent a promising class of materials to fabricate neuromorphic devices with the key requirement of operation with synaptic weight. In this review, recent studies of organic multilevel memory are presented. The operating principles and the latest achievements obtained with devices exploiting the main approaches to reach multilevel operation are discussed, with emphasis on organic devices using floating gates, ferroelectric materials, polymer electrets and photochromic molecules. The latest results obtained using organic multilevel memories for neuromorphic circuits are explored and the major advantages and drawbacks of the use of organic materials for neuromorphic applications are discussed.
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Affiliation(s)
- Lin He
- Institute of Fundamental and Frontier Sciences (IFFS), University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Zuchong Yang
- Institut national de la recherche scientifique (INRS), Centre Énergie Matériaux Télécommunications, 1650 Boul. Lionel Boulet, Varennes J3X 1S2, Canada.
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences (IFFS), University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Tim Leydecker
- Institute of Fundamental and Frontier Sciences (IFFS), University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Emanuele Orgiu
- Institut national de la recherche scientifique (INRS), Centre Énergie Matériaux Télécommunications, 1650 Boul. Lionel Boulet, Varennes J3X 1S2, Canada.
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6
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Li W, Sun K, Yang L, Mao X, Deng S, Jiang H, Gu P, Cao B, Li W, Yi M, Bain CD, Deng R, Zhu J. In Situ Self-Assembly of Nanoscale Particles into Macroscale Ordered Monolayers with Enhanced Memory Performance. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207468. [PMID: 36564364 DOI: 10.1002/smll.202207468] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Indexed: 06/17/2023]
Abstract
In situ fabrication of macroscale ordered monolayers of nanoparticles (NPs) on targeted substrates is highly desirable for precision electronic and optical devices, while it remains a great challenge. In this study, a solution is provided to address this challenge by developing a colloidal ink formulation and employing the direct-ink-writing (DIW) technique, where on-demand delivery of ink at a targeted location and directional evaporation with controllable rate are leveraged to precisely guide the deposition of polystyrene-grafted gold NPs (Au@PS NPs) into a macroscale monolayer with an ordered Au NP array embedded in a PS thin film. A 2D steady-state diffusion-controlled evaporation model, which explains the parameter dependence of the experimental results and gives semiquantitative agreement with the experimental evaporation kinetics is proposed. The ordered monolayer is used as both nanocrystal floating gates and the tunneling layer for nonvolatile memory devices. It shows significantly enhanced performance compared with a disordered NP film prepared by spin coating. This approach allows for fine control of NP self-assembly to print macroscaleordered monolayers directly onto substrates, which has great promise for application in broad fields, including microelectronic and photoelectronic devices, sensors, and functional coatings.
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Affiliation(s)
- Wang Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of the Ministry of Education, School of Chemistry and Chemical Engineering., Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Ke Sun
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Lisong Yang
- Department of Chemistry, Durham University, Stockholm Road, Durham, DH1 3LE, UK
| | - Xi Mao
- State Key Laboratory of Materials Processing and Die & Mould Technology, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of the Ministry of Education, School of Chemistry and Chemical Engineering., Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Shuai Deng
- State Key Laboratory of Materials Processing and Die & Mould Technology, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of the Ministry of Education, School of Chemistry and Chemical Engineering., Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hui Jiang
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Pan Gu
- State Key Laboratory of Materials Processing and Die & Mould Technology, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of the Ministry of Education, School of Chemistry and Chemical Engineering., Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Bowen Cao
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Wen Li
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Mingdong Yi
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Colin D Bain
- Department of Chemistry, Durham University, Stockholm Road, Durham, DH1 3LE, UK
| | - Renhua Deng
- State Key Laboratory of Materials Processing and Die & Mould Technology, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of the Ministry of Education, School of Chemistry and Chemical Engineering., Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Jintao Zhu
- State Key Laboratory of Materials Processing and Die & Mould Technology, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of the Ministry of Education, School of Chemistry and Chemical Engineering., Huazhong University of Science and Technology, Wuhan, 430074, China
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7
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Chiang YC, Yang WC, Hung CC, Ercan E, Chiu YC, Lin YC, Chen WC. Fully Photoswitchable Phototransistor Memory Comprising Perovskite Quantum Dot-Based Hybrid Nanocomposites as a Photoresponsive Floating Gate. ACS APPLIED MATERIALS & INTERFACES 2023; 15:1675-1684. [PMID: 36562738 DOI: 10.1021/acsami.2c18064] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Tremendous research efforts have been dedicated into the field of photoresponsive nonvolatile memory devices owing to their advantages of fast transmitting speed, low latency, and power-saving property that are suitable for replacing current electrical-driven electronics. However, the reported memory devices still rely on the assistance of gate bias to program them, and a real fully photoswitchable transistor memory is still rare. Herein, we report a phototransistor memory device comprising polymer/perovskite quantum dot (QD) hybrid nanocomposites as a photoresponsive floating gate. The perovskite QDs offer an effective discreteness with an excellent photoresponse that are suitable for photogate application. In addition, a series of ultraviolet (UV)-sensitive insulating polymer hosts were designed to investigate the effect of UV light on the memory behavior. We found that a fully photoswitchable memory device was fulfilled by using the independent and sequential photoexcitation between a UV-sensitive polymer host and a visible light-sensitive QD photogates, which produced decent photoresponse, memory switchability, and highly stable memory retention with a memory ratio of 104 over 104 s. This study not only unraveled the mystery in the fully photoswitchable functionality of nonvolatile memory but also enlightened their potential in the next-generation electronics for light-fidelity application.
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Affiliation(s)
- Yun-Chi Chiang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Wei-Chen Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Chih-Chien Hung
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Ender Ercan
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Yu-Cheng Chiu
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
| | - Yan-Cheng Lin
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Department of Chemical Engineering, National Cheng Kung University, Tainan City 70101, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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8
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Verma D, Liu B, Chen TC, Li LJ, Lai CS. Bi 2O 2Se-based integrated multifunctional optoelectronics. NANOSCALE ADVANCES 2022; 4:3832-3844. [PMID: 36133346 PMCID: PMC9470018 DOI: 10.1039/d2na00245k] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/21/2022] [Accepted: 07/15/2022] [Indexed: 06/16/2023]
Abstract
The prominent light-matter interaction in 2D materials has become a pivotal research area that involves either an archetypal study of inherent mechanisms to explore such interactions or specific applications to assess the efficacy of such novel phenomena. With scientifically controlled light-matter interactions, various applications have been developed. Here, we report four diverse applications on a single structure utilizing the efficient photoresponse of Bi2O2Se with precisely tuned multiple optical wavelengths. First, the Bi2O2Se-based device performs the function of optoelectronic memory using UV (λ = 365 nm, 1.1 mW cm-2) for the write-in process with SiO2 as the charge trapping medium followed by a +1 V bias for read-out. Second, associative learning is mimicked with wavelengths of 525 nm and 635 nm. Third, using similar optical inputs, functions of logic gates "AND", "OR", "NAND", and "NOR" are realized with response current and resistance as outputs. Fourth is the demonstration of a 4 bit binary to the decimal converter using wavelengths of 740 nm (LSB), 595 nm, 490 nm, and 385 nm (MSB) as binary inputs and output response current regarded as equivalent decimal output. Our demonstration is a paradigm for Bi2O2Se-based devices to be an integral part of future advanced multifunctional electronic systems.
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Affiliation(s)
- Dharmendra Verma
- Department of Electronic Engineering, Chang-Gung University Taoyuan 33302 Taiwan +886-3-2118800 ext. 5786
| | - Bo Liu
- Faculty of Information Technology, College of Microelectronics, Beijing University of Technology Beijing 100124 People's Republic of China
| | - Tsung-Cheng Chen
- Department of Electronic Engineering, Chang-Gung University Taoyuan 33302 Taiwan +886-3-2118800 ext. 5786
| | - Lain-Jong Li
- Department of Mechanical Engineering, University of Hong Kong Pokfulam Road 999077 Hong Kong
| | - Chao-Sung Lai
- Department of Electronic Engineering, Chang-Gung University Taoyuan 33302 Taiwan +886-3-2118800 ext. 5786
- Department of Nephrology, Chang Gung Memorial Hospital Linkou 33302 Taiwan
- Department of Materials Engineering, Ming-Chi University of Technology New Taipei City 24301 Taiwan
- Artificial Intelligence Research Center, Chang Gung University Taoyuan 33302 Taiwan
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9
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Xing Y, Qiao N, Yu J, Zhang M, Dai J, Niu T, Wang Y, Zhu Y, Bu L, Lu G. Spectroscopic depth profilometry of organic thin films upon inductively coupled plasma etching. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2022; 93:073903. [PMID: 35922326 DOI: 10.1063/5.0088718] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2022] [Accepted: 06/23/2022] [Indexed: 06/15/2023]
Abstract
During the deposition and post-treatments of organic films, phase separation along the film-depth direction is a commonly observed phenomenon. Thus, film-depth profilometry of organic thin films and the corresponding scientific instruments are attracting extensive interest. Here, we propose spectroscopic film-depth profilometry of organic thin films upon inductively coupled plasma etching. Compared with capacitively coupled plasma, which usually generates inhomogeneous filamentous discharge, damaging films underneath the etched surface, inductively coupled plasma studied in this work refers to a so-called soft plasma source generated by a well-defined homogenous glow discharge. The absorption spectra of the etched films are monitored by using a spectrometer, from which the film-depth-dependent light absorption spectra are, thus, numerically obtained with a film-depth resolution better than 1 nm. This methodology is available not only for non-conjugated molecules but also for conjugated organic semiconductors, which are usually known as unstable materials for many ionic plasma sources. Organic films for solar cells and field-effect transistors are investigated as model materials to demonstrate the applications of this depth profilometry.
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Affiliation(s)
- Yifan Xing
- State Key Laboratory of Electrical Insulation and Power Equipment, Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Nan Qiao
- State Key Laboratory of Electrical Insulation and Power Equipment, Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jinde Yu
- State Key Laboratory of Electrical Insulation and Power Equipment, Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Meng Zhang
- State Key Laboratory of Electrical Insulation and Power Equipment, Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Junpeng Dai
- State Key Laboratory of Electrical Insulation and Power Equipment, Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Tingting Niu
- State Key Laboratory of Electrical Insulation and Power Equipment, Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yuheng Wang
- State Key Laboratory of Electrical Insulation and Power Equipment, Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yuanwei Zhu
- State Key Laboratory of Electrical Insulation and Power Equipment, Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Laju Bu
- School of Science, Xi'an Jiaotong University, Xi'an 710049, China
| | - Guanghao Lu
- State Key Laboratory of Electrical Insulation and Power Equipment, Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China
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10
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Ho CH, Lin YC, Yang WC, Ercan E, Chiang YC, Lin BH, Kuo CC, Chen WC. Fast Photoresponsive Phototransistor Memory Using Star-Shaped Conjugated Rod-Coil Molecules as a Floating Gate. ACS APPLIED MATERIALS & INTERFACES 2022; 14:15468-15477. [PMID: 35318845 DOI: 10.1021/acsami.2c00622] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
With the explosive growth in data generation, photomemory capable of multibit data storage is highly desired to enhance the capacity of storage media. To improve the performance of phototransistor memory, an organic-molecule-based electret with an elaborate nanostructure is of great importance because it can enable multibit data storage in a memory device with high stability. In this study, a series of star-shaped rod-coil molecules consisting of perylenediimide (PDI) and biobased solanesol were synthesized in two-armed (PDI-Sol2), four-armed (PDI-Sol4), and six-armed (PDI-Sol6) architectures. Their molecular architecture-morphology relationships were investigated, and phototransistor memory was fabricated and characterized to evaluate the structure-performance relationship of these rod-coil molecules. Accordingly, the memory devices were enabled by photowriting with panchromatic light (405-650 nm) and electrical erasing using a gate bias. The PDI-Sol4-based memory device showed high memory ratios of 10 000 over 10 000 s and a rapid multilevel photoresponse of 50 ms. This achievement is related to the favorable energy-level alignment, isolated nanostructure, and face-on orientation of PDI-Sol4, which eliminated the charge tunneling barrier. The results of this study provide a new strategy for tailoring nanostructures in organic-molecule-based electrets by using a star-shaped rod-coil architecture for high-performance phototransistor memory.
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Affiliation(s)
- Cheng-Han Ho
- Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei 10608, Taiwan
| | - Yan-Cheng Lin
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center of Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Wei-Chen Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Ender Ercan
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center of Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Yun-Chi Chiang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Bi-Hsuan Lin
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Chi-Ching Kuo
- Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei 10608, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center of Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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11
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Yang W, Lin Y, Inagaki S, Shimizu H, Ercan E, Hsu L, Chueh C, Higashihara T, Chen W. Low-Energy-Consumption and Electret-Free Photosynaptic Transistor Utilizing Poly(3-hexylthiophene)-Based Conjugated Block Copolymers. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105190. [PMID: 35064648 PMCID: PMC8922097 DOI: 10.1002/advs.202105190] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/12/2021] [Revised: 01/03/2022] [Indexed: 05/14/2023]
Abstract
Neuromorphic computation possesses the advantages of self-learning, highly parallel computation, and low energy consumption, and is of great promise to overcome the bottleneck of von Neumann computation. In this work, a series of poly(3-hexylthiophene) (P3HT)-based block copolymers (BCPs) with different coil segments, including polystyrene, poly(2-vinylpyridine) (P2VP), poly(2-vinylnaphthalene), and poly(butyl acrylate), are utilized in photosynaptic transistor to emulate paired-pulse facilitation, spike time/rate-dependent plasticity, short/long-term neuroplasticity, and learning-forgetting-relearning processes. P3HT serves as a carrier transport channel and a photogate, while the insulating coils with electrophilic groups are for charge trapping and preservation. Three main factors are unveiled to govern the properties of these P3HT-based BCPs: i) rigidity of the insulating coil, ii) energy levels between the constituent polymers, and iii) electrophilicity of the insulating coil. Accordingly, P3HT-b-P2VP-based photosynaptic transistor with a sought-after BCP combination demonstrates long-term memory behavior with current contrast up to 105 , short-term memory behavior with high paired-pulse facilitation ratio of 1.38, and an ultralow energy consumption of 0.56 fJ at an operating voltage of -0.0003 V. As far as it is known, this is the first work to utilize conjugated BCPs in an electret-free photosynaptic transistor showing great potential to the artificial intelligence technology.
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Affiliation(s)
- Wei‐Chen Yang
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
| | - Yan‐Cheng Lin
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
| | - Shin Inagaki
- Department of Organic Materials ScienceGraduate School of Organic Materials ScienceYamagata UniversityYonezawaYamagata992‐8510Japan
| | - Hiroya Shimizu
- Department of Organic Materials ScienceGraduate School of Organic Materials ScienceYamagata UniversityYonezawaYamagata992‐8510Japan
| | - Ender Ercan
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
| | - Li‐Che Hsu
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
- Institute of Polymer Science and EngineeringNational Taiwan UniversityTaipei10617Taiwan
| | - Chu‐Chen Chueh
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
| | - Tomoya Higashihara
- Department of Organic Materials ScienceGraduate School of Organic Materials ScienceYamagata UniversityYonezawaYamagata992‐8510Japan
| | - Wen‐Chang Chen
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
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12
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Lin YC, Yang WC, Chiang YC, Chen WC. Recent Advances in Organic Phototransistors: Nonvolatile Memory, Artificial Synapses, and Photodetectors. SMALL SCIENCE 2022. [DOI: 10.1002/smsc.202100109] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022] Open
Affiliation(s)
- Yan-Cheng Lin
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei 10617 Taiwan
| | - Wei-Chen Yang
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
| | - Yun-Chi Chiang
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei 10617 Taiwan
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13
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Wang J, Zhang L, Li Z. Aggregation-Induced Emission Luminogens with Photoresponsive Behaviors for Biomedical Applications. Adv Healthc Mater 2021; 10:e2101169. [PMID: 34783194 DOI: 10.1002/adhm.202101169] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/14/2021] [Revised: 10/25/2021] [Indexed: 12/25/2022]
Abstract
Fluorescent biomedical materials can visualize subcellular structures and therapy processes in vivo. The aggregation-induced emission (AIE) phenomenon helps suppress the quenching effect in the aggregated state suffered by conventional fluorescent materials, thereby contributing to design strategies for fluorescent biomedical materials. Photoresponsive biomedical materials have attracted attention because of the inherent advantages of light; i.e., remote control, high spatial and temporal resolution, and environmentally friendly characteristics, and their combination with AIE facilitates development of fluorescent molecules with efficient photochemical reactions upon light irradiation. In this review, organic compounds with AIE features for biomedical applications and design strategies for photoresponsive AIE luminogens (AIEgens) are first summarized briefly. Applications are then reviewed, with the employment of photoresponsive and AIE-active molecules for photoactivation imaging, super-resolution imaging, light-induced drug delivery, photodynamic therapy with photochromic behavior, and bacterial targeting and killing being discussed at length. Finally, the future outlook for AIEgens is considered with the aim of stimulating innovative work for further development of this field.
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Affiliation(s)
- Jiaqiang Wang
- Institute of Molecular Aggregation Science Tianjin University Tianjin 300072 China
| | - Liyao Zhang
- School of Life Sciences Tianjin University Tianjin 300072 China
| | - Zhen Li
- Institute of Molecular Aggregation Science Tianjin University Tianjin 300072 China
- Joint School of National University of Singapore and Tianjin University International Campus of Tianjin University Binhai New City Fuzhou 350207 China
- Department of Chemistry Wuhan University Wuhan 430072 China
- Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology Wuhan 430074 China
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14
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Lee S, Kim S, Yoo H. Contribution of Polymers to Electronic Memory Devices and Applications. Polymers (Basel) 2021; 13:3774. [PMID: 34771332 PMCID: PMC8588209 DOI: 10.3390/polym13213774] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 10/26/2021] [Accepted: 10/29/2021] [Indexed: 11/23/2022] Open
Abstract
Electronic memory devices, such as memristors, charge trap memory, and floating-gate memory, have been developed over the last decade. The use of polymers in electronic memory devices enables new opportunities, including easy-to-fabricate processes, mechanical flexibility, and neuromorphic applications. This review revisits recent efforts on polymer-based electronic memory developments. The versatile contributions of polymers for emerging memory devices are classified, providing a timely overview of such unconventional functionalities with a strong emphasis on the merits of polymer utilization. Furthermore, this review discusses the opportunities and challenges of polymer-based memory devices with respect to their device performance and stability for practical applications.
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Affiliation(s)
| | | | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam 1342, Korea; (S.L.); (S.K.)
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15
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Chen MN, Chang SW, Prakoso SP, Li YT, Chen KL, Chiu YC. Unveiling the Photoinduced Recovery Mystery in Conjugated Polymer-Based Transistor Memory. ACS APPLIED MATERIALS & INTERFACES 2021; 13:44656-44662. [PMID: 34506100 DOI: 10.1021/acsami.1c12742] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A straightforward mechanism for the photorecovery behavior of photoresponsive nonvolatile organic field-effect transistor (OFET) memories is proposed by employing a commercially available conjugated polymer, the poly(9,9-dioctylfluorene) (PFO), the conjugated monomer fluorene (FO), and the nonconjugated poly(vinyl alcohol) (PVA), as charge storage layers beneath the semiconducting pentacene layer. As photoexcitons are generated upon light exposure, the respective charges recombine with the trapped charges in electrets and neutralize the memory device. However, whether the excitons are generated in the semiconducting layer or the electret part, the origin that mainly governs the photorecovery behavior remains unclear. In this study, we show that when PVA, a nonphotoactive electret, replaces PFO the photorecovery behavior is totally absent, and it confirms the photorecovery behavior dominated by the excitons in situ generated in a charged electret. Moreover, PFO as a photoactive electret, exhibiting an excellent hole-trapping ability over 24 h in the dark and high Ion/Ioff current ratio of 108, has successfully demonstrated rapid photoinduced recovery under UV light. The devices also display a reliable switching ability between electrical charge trapping and optical recovery cycles for optical-recording application. This report presents a clear understanding behind photorecovery phenomena that demonstrates useful guidance to boost the development of photoactive OFET memories based on conjugated polymer electrets.
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Affiliation(s)
- Mei-Nung Chen
- Department of Chemical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Road, Da'an District, Taipei City 10607, Taiwan
| | - Shu-Wei Chang
- Department of Chemical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Road, Da'an District, Taipei City 10607, Taiwan
| | - Suhendro Purbo Prakoso
- Department of Chemical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Road, Da'an District, Taipei City 10607, Taiwan
| | - Yen-Ting Li
- Department of Chemical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Road, Da'an District, Taipei City 10607, Taiwan
| | - Kai-Lin Chen
- Department of Chemical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Road, Da'an District, Taipei City 10607, Taiwan
| | - Yu-Cheng Chiu
- Department of Chemical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Road, Da'an District, Taipei City 10607, Taiwan
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16
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Ercan E, Lin Y, Chen C, Fang Y, Yang W, Yang Y, Chen W. Realizing fast photoinduced recovery with polyfluorene‐
block
‐poly
(vinylphenyl oxadiazole) block copolymers as electret in photonic transistor memory devices. JOURNAL OF POLYMER SCIENCE 2021. [DOI: 10.1002/pol.20210393] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Affiliation(s)
- Ender Ercan
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei Taiwan
| | - Yan‐Cheng Lin
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei Taiwan
| | - Chun‐Kai Chen
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
| | - Yi‐Kai Fang
- Institute of Polymer Science and Engineering National Taiwan University Taipei Taiwan
| | - Wei‐Chen Yang
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
| | - Yun‐Fang Yang
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
| | - Wen‐Chang Chen
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei Taiwan
- Institute of Polymer Science and Engineering National Taiwan University Taipei Taiwan
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17
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Yang WC, Lin YC, Liao MY, Hsu LC, Lam JY, Chuang TH, Li GS, Yang YF, Chueh CC, Chen WC. Comprehensive Non-volatile Photo-programming Transistor Memory via a Dual-Functional Perovskite-Based Floating Gate. ACS APPLIED MATERIALS & INTERFACES 2021; 13:20417-20426. [PMID: 33886254 DOI: 10.1021/acsami.1c03402] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Photonic transistor memory has received increasing attention as next-generation optoelectronic devices for light fidelity (Li-Fi) application due to the attractive advantages of ultra-speed, high security, and low power consumption. However, most transistor-type photonic memories developed to date still rely on electrical bias for operation, imposing certain limits on data transmission efficiency and energy consumption. In this study, the dual manipulation of "photo-writing" and "photo-erasing" of a novel photonic transistor memory is successfully realized by cleverly utilizing the complementary light absorption between the photoactive material, n-type BPE-PTCDI, in the active channel and the hybrid floating gate, CH3NH3PbBr3/poly(2-vinylpyridine). The fabricated device not only can be operated under the full spectrum but also shows stable switching cycles of photo-writing (PW)-reading (R)-photo-erasing (PE)-reading (R) (PW-R-PE-R) with a high memory ratio of ∼104, and the memory characteristics possess a stable long-term retention of >104 s. Notably, photo-erasing only requires 1 s light illumination. Due to the fully optical functionality, the rigid gate electrode is removed and a novel two-terminal flexible photonic memory is fabricated. The device not only exhibits stable electrical performance after 1000 bending cycles but also manifests a multilevel functional behavior, demonstrating a promising potential for the future development of photoactive electronic devices.
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Affiliation(s)
- Wei-Chen Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Yan-Cheng Lin
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Ming-Yun Liao
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Li-Che Hsu
- Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Jeun-Yan Lam
- Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Tsung-Han Chuang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Guan-Syuan Li
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Yun-Fang Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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18
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Hsu LC, Isono T, Lin YC, Kobayashi S, Chiang YC, Jiang DH, Hung CC, Ercan E, Yang WC, Hsieh HC, Tajima K, Satoh T, Chen WC. Stretchable OFET Memories: Tuning the Morphology and the Charge-Trapping Ability of Conjugated Block Copolymers through Soft Segment Branching. ACS APPLIED MATERIALS & INTERFACES 2021; 13:2932-2943. [PMID: 33423476 DOI: 10.1021/acsami.0c18820] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The mechanical properties and structural design flexibility of charge-trapping polymer electrets have led to their widespread use in organic field-effect transistor (OFET) memories. For example, in the electrets of polyfluorene-based conjugated/insulating block copolymers (BCPs), the confined fiberlike polyfluorene nanostructures in the insulating polymer matrix act as effective hole-trapping sites, leading to controllable memory performance through the design of BCPs. However, few studies have reported intrinsically stretchable charge-trapping materials and their memory device applications, and a practical method to correlate the thin-film morphology of BCP electrets with their charge-trapping ability has not yet been developed. In this study, a series of new conjugated/insulating BCPs, poly(9,9-di-n-hexyl-2,7-fluorene)-block-poly(δ-decanolactone)s (PF-b-PDLx, x = 1-3), as stretchable hole-trapping materials are reported. The linear and branched PDL blocks with comparable molecular weights were used to investigate the effect of polymer architecture on morphology and device performance. Moreover, the coverage area of the polyfluorene nanofibers on the BCP films was extracted from atomic force microscopy images, which can be correlated with the trapping density of the polymer electrets. The branched PDL segments not only improve stretchability but also tailor crystallinity and phase separation of the BCPs, thus increasing their charge-trapping ability. The OFET memory device with PF-b-PDL3 as the electret layer exhibited the largest memory window (102 V) and could retain its performance at up to 100% strain. This research highlights the importance of the BCP design for developing stretchable charge-trapping materials.
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Affiliation(s)
- Li-Che Hsu
- Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
- Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Takuya Isono
- Faculty of Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Yan-Cheng Lin
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Saburo Kobayashi
- Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Yun-Chi Chiang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Dai-Hua Jiang
- Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
- Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Chih-Chien Hung
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Ender Ercan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Wei-Chen Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Hui-Ching Hsieh
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Kenji Tajima
- Faculty of Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Toshifumi Satoh
- Faculty of Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Wen-Chang Chen
- Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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19
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20
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Jin R, Wang J, Shi K, Qiu B, Ma L, Huang S, Li Z. Multilevel storage and photoinduced-reset memory by an inorganic perovskite quantum-dot/polystyrene floating-gate organic transistor. RSC Adv 2020; 10:43225-43232. [PMID: 35514915 PMCID: PMC9058139 DOI: 10.1039/d0ra08021g] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/19/2020] [Accepted: 11/18/2020] [Indexed: 11/24/2022] Open
Abstract
Inorganic halide perovskite quantum dots (IHP QDs) have been widely studied in optoelectronic devices because of their size-dependent tunable bandgaps, long electron-hole diffusion lengths and excellent absorption properties. Herein, a novel floating-gate organic field-effect transistor memory (FGOFETM) is demonstrated, comprising a floating-gate of IHP QDs embedded in a polystyrene matrix. Notably, the FGOFETM exhibits photoinduced-reset characteristic that allows data removal by photo irradiation. This feature makes low energy-consuming memory and innovative devices possible. The nonvolatile devices also show a large memory window (≈90 V), ultrahigh memory on/off ratio (over 107) and therefore excellent multilevel information storage, in which 4 recognizable non-volatile states and long retention time (up to 10 years) are obtained. This work not only offers an effective guideline of high-performance FGOFETMs, but also shows great potential to realize multilevel data storage under electrical programming and photoinduced-reset processes.
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Affiliation(s)
- Risheng Jin
- College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
| | - Jin Wang
- Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
| | - Keli Shi
- College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
| | - Beibei Qiu
- College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
| | - Lanchao Ma
- College of Materials Science and Engineering, Beijing Key Laboratory of Special Elastomer Composite Materials, Beijing Institute of Petrochemical Technology Beijing 102617 P. R. China
| | - Shihua Huang
- College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
| | - Zhengquan Li
- Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
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21
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Chiang YC, Hung CC, Lin YC, Chiu YC, Isono T, Satoh T, Chen WC. High-Performance Nonvolatile Organic Photonic Transistor Memory Devices using Conjugated Rod-Coil Materials as a Floating Gate. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2002638. [PMID: 32700349 DOI: 10.1002/adma.202002638] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2020] [Revised: 06/07/2020] [Indexed: 06/11/2023]
Abstract
A novel approach for using conjugated rod-coil materials as a floating gate in the fabrication of nonvolatile photonic transistor memory devices, consisting of n-type Sol-PDI and p-type C10-DNTT, is presented. Sol-PDI and C10-DNTT are used as dual functions of charge-trapping (conjugated rod) and tunneling (insulating coil), while n-type BPE-PDI and p-type DNTT are employed as the corresponding transporting layers. By using the same conjugated rod in the memory layer and transporting channel with a self-assembled structure, both n-type and p-type memory devices exhibit a fast response, a high current contrast between "Photo-On" and "Electrical-Off" bistable states over 105 , and an extremely low programing driving force of 0.1 V. The fabricated photon-driven memory devices exhibit a quick response to different wavelengths of light and a broadband light response that highlight their promising potential for light-recorder and synaptic device applications.
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Affiliation(s)
- Yun-Chi Chiang
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Chih-Chien Hung
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
| | - Yan-Cheng Lin
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Yu-Cheng Chiu
- Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan
| | - Takuya Isono
- Faculty of Engineering, Hokkaido University, Sapporo, 060-8628, Japan
| | - Toshifumi Satoh
- Faculty of Engineering, Hokkaido University, Sapporo, 060-8628, Japan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
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