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Sun P, Han H, Xia XC, Dai JY, Xu KQ, Zhang WH, Yang XL, Xie MH. Towards an E-nose: Metal-organic frameworks based quartz crystal microbalance array for fruit ripeness indexing. Talanta 2024; 269:125484. [PMID: 38043338 DOI: 10.1016/j.talanta.2023.125484] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/28/2023] [Revised: 11/12/2023] [Accepted: 11/23/2023] [Indexed: 12/05/2023]
Abstract
Ethylene is a hormone for fruit ripening control, and for the purpose of maintaining plant quality, ethylene monitoring is crucial. Due to the simple structure and limited functionality, the technical realization of ethylene detection by an artificial sensor remains a challenge. In this paper, we present a metal-organic frameworks (MOFs) array based electronic nose (e-nose) for rapid and accurate determination of ethylene. Six zirconium-based MOFs with systematically modified pore sizes and π-π binding sites have been prepared and fabricated into a sensor array using quartz crystal microbalance (QCM) technology. By virtue of the synergistic features of six MOF sensors, selectivity detection of ethylene has been achieved. The detection limit reaches to 0.27 ± 0.02 ppm, and high selectivity and stability (98.29 % ± 0.88 %) could also be confirmed. By submitting data to machine learning algorithm, an e-nose system could be established for discriminating ethylene from mixtures with a qualitative accuracy of 90.30 % and quantitative accuracy of 98.89 %. Practical evaluation suggests that the e-nose could index the fruit quality based on the accurate detection of ethylene released during fruit ripeness. This work demonstrates the promising potential of fabricating MOFs based e-nose systems for practical monitoring applications by selectively detecting challengeable target molecules.
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Affiliation(s)
- Peng Sun
- Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology, Yancheng, 224051, PR China
| | - Hao Han
- Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology, Yancheng, 224051, PR China
| | - Xu-Chao Xia
- Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology, Yancheng, 224051, PR China
| | - Jin-Yu Dai
- Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology, Yancheng, 224051, PR China
| | - Ke-Qiang Xu
- Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology, Yancheng, 224051, PR China
| | - Wen-Hui Zhang
- Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology, Yancheng, 224051, PR China
| | - Xiu-Li Yang
- Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology, Yancheng, 224051, PR China.
| | - Ming-Hua Xie
- Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology, Yancheng, 224051, PR China.
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Xia Y, Zhang C, Xu Z, Lu S, Cheng X, Wei S, Yuan J, Sun Y, Li Y. Organic iontronic memristors for artificial synapses and bionic neuromorphic computing. NANOSCALE 2024; 16:1471-1489. [PMID: 38180037 DOI: 10.1039/d3nr06057h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
To tackle the current crisis of Moore's law, a sophisticated strategy entails the development of multistable memristors, bionic artificial synapses, logic circuits and brain-inspired neuromorphic computing. In comparison with conventional electronic systems, iontronic memristors offer greater potential for the manifestation of artificial intelligence and brain-machine interaction. Organic iontronic memristive materials (OIMs), which possess an organic backbone and exhibit stoichiometric ionic states, have emerged as pivotal contenders for the realization of high-performance bionic iontronic memristors. In this review, a comprehensive analysis of the progress and prospects of OIMs is presented, encompassing their inherent advantages, diverse types, synthesis methodologies, and wide-ranging applications in memristive devices. Predictably, the field of OIMs, as a rapidly developing research subject, presents an exciting opportunity for the development of highly efficient neuro-iontronic systems in areas such as in-sensor computing devices, artificial synapses, and human perception.
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Affiliation(s)
- Yang Xia
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China.
- School of Chemistry and Life Sciences, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China
| | - Cheng Zhang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China.
| | - Zheng Xu
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China.
| | - Shuanglong Lu
- The Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, Jiangnan University, Wuxi, Jiangsu 214122, China
| | - Xinli Cheng
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China.
| | - Shice Wei
- School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Junwei Yuan
- School of Chemistry and Life Sciences, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China
| | - Yanqiu Sun
- School of Chemistry and Life Sciences, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China
| | - Yang Li
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China.
- The Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, Jiangnan University, Wuxi, Jiangsu 214122, China
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Lin X, Zhou P, Gao Y, Li T, Chen X, Li H, Jiang R, Chen Z, Zheng H. Implementation of Thermal-Triggered Binary-Ternary Switchable Memory Performance in Zn/polysulfide/organic Complex-Based Memorizers by Finely Modulating the S 62- Relaxation. Inorg Chem 2024; 63:775-783. [PMID: 38134353 DOI: 10.1021/acs.inorgchem.3c03787] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2023]
Abstract
Polysulfide-based multilevel memorizers are promising as novel memorizers, in which the occurrence of Sn2- relaxation is key for their multilevel memory. However, the effects of crystal packing and the side group of organic ligands on Sn2- relaxation are still ambiguous. In this work, ionic [Zn(S6)2·Zn2(Bipy)2SO4 (1), Zn(S6)2·Zn(Pmbipy)3 (2)] and neutral [ZnS6(Ombipy) (3), ZnS6(Phen)2 (4)] Zn/polysulfide/organic complexes with different packing modes and structures of organic ligands have been synthesized and were fabricated as memory devices. In both ionic and neutral Zn complexes, the S62- relaxation will be blocked by steric hindrances due to the packing of counter-cations and hydrogen-bond restrictions. Consequently, only the binary memory performances can be seen in FTO/1/Ag, FTO/2/Ag, and FTO/4/Ag, which originate from the more condensed packing of conjugated ligands upon electrical stimulus. Interestingly, FTO/3/Ag illustrates the unique thermally triggered reversible binary-ternary switchable memory performance. In detail, after introducing a methyl group on the 6'-position of bipyridine in ZnS6(Ombipy) (3), the ring-to-chain relaxation of S62- anions at room temperature will be inhibited, but it can happen at a higher temperature of 120 °C, which has been verified by elongated S-S lengths and the strengthened C-H···S hydrogen bond upon heating. The rules drawn in this work will provide a useful guide for the design of stimulus-responsive memorizers that can be applied in special industries such as automobile, oil, and gas industries.
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Affiliation(s)
- Xiaoli Lin
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Panke Zhou
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Yiqun Gao
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Tao Li
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Xiong Chen
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Haohong Li
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Rong Jiang
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Zhirong Chen
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Huidong Zheng
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
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Liu JY, Zhang XH, Fang H, Zhang SQ, Chen Y, Liao Q, Chen HM, Chen HP, Lin MJ. Novel Semiconductive Ternary Hybrid Heterostructures for Artificial Optoelectronic Synapses. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302197. [PMID: 37403302 DOI: 10.1002/smll.202302197] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Revised: 06/12/2023] [Indexed: 07/06/2023]
Abstract
Synaptic devices that mimic biological synapses are considered as promising candidates for brain-inspired devices, offering the functionalities in neuromorphic computing. However, modulation of emerging optoelectronic synaptic devices has rarely been reported. Herein, a semiconductive ternary hybrid heterostructure is prepared with a D-D'-A configuration by introducing polyoxometalate (POM) as an additional electroactive donor (D') into a metalloviologen-based D-A framework. The obtained material features an unprecedented porous 8-connected bcu-net that accommodates nanoscale [α-SiW12 O40 ]4- counterions, displaying uncommon optoelectronic responses. Besides, the fabricated synaptic device based on this material can achieve dual-modulation of synaptic plasticity due to the synergetic effect of electron reservoir POM and photoinduced electron transfer. And it can successfully simulate learning and memory processes similar to those in biological systems. The result provides a facile and effective strategy to customize multi-modality artificial synapses in the field of crystal engineering, which opens a new direction for developing high-performance neuromorphic devices.
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Affiliation(s)
- Jing-Yan Liu
- Key Laboratory of Molecule Synthesis and Function Discovery, and Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Xiang-Hong Zhang
- Institure of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, P. R. China
| | - Hua Fang
- Key Laboratory of Molecule Synthesis and Function Discovery, and Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Shu-Quan Zhang
- College of Zhicheng, Fuzhou University, Fuzhou, 350002, P. R. China
| | - Yong Chen
- Key Laboratory of Molecule Synthesis and Function Discovery, and Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Qing Liao
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Hong-Ming Chen
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Hui-Peng Chen
- Institure of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, P. R. China
| | - Mei-Jin Lin
- Key Laboratory of Molecule Synthesis and Function Discovery, and Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, 350116, P. R. China
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350116, P. R. China
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Saha S, Ananthram KS, Hassan N, Ugale A, Tarafder K, Ballav N. Ag Nanoparticles-Induced Metallic Conductivity in Thin Films of 2D Metal-Organic Framework Cu 3(HHTP) 2. NANO LETTERS 2023; 23:9326-9332. [PMID: 37843499 DOI: 10.1021/acs.nanolett.3c02522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/17/2023]
Abstract
Two-dimensional (2D) metal-organic frameworks (MOFs) are usually associated with higher electrical conductivity and charge carrier mobility when compared with 3D MOFs. However, attaining metallic conduction in such systems through synthetic or postsynthetic modifications is extremely challenging. Herein, we present the fabrication of thin films of a 2D MOF, Cu3(HHTP)2 (HHTP = 2,3,6,7,10,11-hexahydroxytriphenylene), decorated with silver nanoparticles (AgNPs) exhibiting significant conductivity enhancement at room temperature. Variable-temperature electrical transport measurements across the low-temperature (200 K) to high-temperature (373 K) regime evidenced metallic conduction. Interestingly, thin films of a 3D MOF, CuTCNQ (TCNQ = 7,7,8,8-tetracyanoquinodimethane), upon decoration with AgNPs, disclosed a converse trend. The origin of such distinctive observations on AgNPs@Cu3(HHTP)2 and AgNPs@CuTCNQ systems was comprehended by using first-principles density functional theory (DFT) calculations and attributed to an interfacial electronic effect. Our work sheds new light on rationally designing synthetic modifications in thin films of MOFs to tune the electrical transport property.
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Affiliation(s)
- Sauvik Saha
- Department of Chemistry, Indian Institute of Science Education and Research (IISER), Pune 411008, India
| | - K S Ananthram
- Department of Physics, National Institute of Technology Karnataka, Surathkal, Mangalore 575 025, India
| | - Nahid Hassan
- Department of Chemistry, Indian Institute of Science Education and Research (IISER), Pune 411008, India
| | - Ajay Ugale
- Department of Chemistry, Indian Institute of Science Education and Research (IISER), Pune 411008, India
| | - Kartick Tarafder
- Department of Physics, National Institute of Technology Karnataka, Surathkal, Mangalore 575 025, India
| | - Nirmalya Ballav
- Department of Chemistry, Indian Institute of Science Education and Research (IISER), Pune 411008, India
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6
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Ding G, Zhao J, Zhou K, Zheng Q, Han ST, Peng X, Zhou Y. Porous crystalline materials for memories and neuromorphic computing systems. Chem Soc Rev 2023; 52:7071-7136. [PMID: 37755573 DOI: 10.1039/d3cs00259d] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/28/2023]
Abstract
Porous crystalline materials usually include metal-organic frameworks (MOFs), covalent organic frameworks (COFs), hydrogen-bonded organic frameworks (HOFs) and zeolites, which exhibit exceptional porosity and structural/composition designability, promoting the increasing attention in memory and neuromorphic computing systems in the last decade. From both the perspective of materials and devices, it is crucial to provide a comprehensive and timely summary of the applications of porous crystalline materials in memory and neuromorphic computing systems to guide future research endeavors. Moreover, the utilization of porous crystalline materials in electronics necessitates a shift from powder synthesis to high-quality film preparation to ensure high device performance. This review highlights the strategies for preparing porous crystalline materials films and discusses their advancements in memory and neuromorphic electronics. It also provides a detailed comparative analysis and presents the existing challenges and future research directions, which can attract the experts from various fields (e.g., materials scientists, chemists, and engineers) with the aim of promoting the applications of porous crystalline materials in memory and neuromorphic computing systems.
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Affiliation(s)
- Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - JiYu Zhao
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
- State Key Laboratory of Fine Chemicals, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - Qi Zheng
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Xiaojun Peng
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
- State Key Laboratory of Fine Chemicals, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
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7
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Huang D, Wu M, Kuga S, Huang Y. Size-Controlled Silver Nanoparticles Supported by Pyrolytic Carbon from Microcrystalline Cellulose. Int J Mol Sci 2023; 24:14431. [PMID: 37833880 PMCID: PMC10572184 DOI: 10.3390/ijms241914431] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/15/2023] [Revised: 09/09/2023] [Accepted: 09/20/2023] [Indexed: 10/15/2023] Open
Abstract
A facile method was developed for preparing size-controlled silver nanoparticles supported by pyrolytic carbon from microcrystalline cellulose (MCC). The pyrolysis of cellulose-AgNO3 mixture caused the oxidation of cellulose, resulting in carboxyl groups to which silver ions can bind firmly and act as nuclei for the deposition of silver nanoparticles. The structure and properties of the obtained nanocomposite were characterized by using a scanning electron microscope (SEM), transmission electron microscopy (TEM), thermogravimetric analysis (TGA), Fourier transform infrared (FT-IR) and X-ray diffraction (XRD). The results suggest that silver nanoparticles were integrated successfully and dispersed uniformly in the pyrolytic carbon matrix. The average particle size varied between 20 nm and 100 nm in correlation to the dose of silver nitrate and temperature of pyrolysis. The products showed high electric conductivity and strong antimicrobial activity against Escherichia coli (E. coli).
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Affiliation(s)
- Dayong Huang
- National Engineering Research Center of Engineering Plastics, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- Xiong'an Institute of Innovation, Xiong'an 071899, China
- Center of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Min Wu
- National Engineering Research Center of Engineering Plastics, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- Xiong'an Institute of Innovation, Xiong'an 071899, China
- Center of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shigenori Kuga
- National Engineering Research Center of Engineering Plastics, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Yong Huang
- National Engineering Research Center of Engineering Plastics, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
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8
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Sindhu P, Ananthram KS, Jain A, Tarafder K, Ballav N. Insulator-to-metal-like transition in thin films of a biological metal-organic framework. Nat Commun 2023; 14:2857. [PMID: 37208325 DOI: 10.1038/s41467-023-38434-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/20/2022] [Accepted: 04/28/2023] [Indexed: 05/21/2023] Open
Abstract
Temperature-induced insulator-to-metal transitions (IMTs) where the electrical resistivity can be altered by over tens of orders of magnitude are most often accompanied by structural phase transition in the system. Here, we demonstrate an insulator-to-metal-like transition (IMLT) at 333 K in thin films of a biological metal-organic framework (bio-MOF) which was generated upon an extended coordination of the cystine (dimer of amino acid cysteine) ligand with cupric ion (spin-1/2 system) - without appreciable change in the structure. Bio-MOFs are crystalline porous solids and a subclass of conventional MOFs where physiological functionalities of bio-molecular ligands along with the structural diversity can primarily be utilized for various biomedical applications. MOFs are usually electrical insulators (so as our expectation with bio-MOFs) and can be bestowed with reasonable electrical conductivity by the design. This discovery of electronically driven IMLT opens new opportunities for bio-MOFs, to emerge as strongly correlated reticular materials with thin film device functionalities.
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Affiliation(s)
- Pooja Sindhu
- Department of Chemistry, Indian Institute of Science Education and Research, Dr. Homi Bhabha Road, Pune, 411 008, India
| | - K S Ananthram
- Department of Physics, National Institute of Technology Karnataka, Surathkal, Mangalore, 575 025, India
| | - Anil Jain
- Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai, 400085, India
- Homi Bhabha National Institute, Anushakti Nagar, Mumbai, 400094, India
| | - Kartick Tarafder
- Department of Physics, National Institute of Technology Karnataka, Surathkal, Mangalore, 575 025, India
| | - Nirmalya Ballav
- Department of Chemistry, Indian Institute of Science Education and Research, Dr. Homi Bhabha Road, Pune, 411 008, India.
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9
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Song K, Du L, Yue G, Li T, Li H, Zheng S, Chen Z, Zheng H. Simultaneously elevating the resistive switching level and ambient-air-stability of 3D perovskite (TAZ-H)PbBr 3-based memory device by encapsulating into polyvinylpyrrolidone. J Colloid Interface Sci 2023; 642:408-420. [PMID: 37023513 DOI: 10.1016/j.jcis.2023.03.192] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2023] [Revised: 03/19/2023] [Accepted: 03/29/2023] [Indexed: 04/08/2023]
Abstract
The study about simultaneously enhancing the resistive switching level and ambient-air-stability of perovskite-based memorizers will promote its commercialization. Here, a new 3D perovskite (TAZ-H)PbBr3 (TAZ-H+ = protonated thiazole) has been fabricated as FTO/(TAZ-H)PbBr3/Ag device, which only exhibits binary memory performance with the high tolerant temperature of 170 °C. After encapsulating by polyvinylpyrrolidone (PVP), the (TAZ-H)PbBr3@PVP composite-based device can demonstrate ternary resistive switching behavior with considerable ON2/ON1/OFF ratio (105.9: 103.9:1) and high ternary yield (68 %). Specially, this device presents good ambient-air stability at RH 80 % and thermal tolerance of 100 °C. The binary resistive switching mechanism can be ascribed to the halogen ion migration induced by bromine defects in the (PbBr3)nn- framework. But the ternary resistive switching phenomenon in the (TAZ-H)PbBr3@PVP-based device could be depicted as the carrier transport from filled traps of PVP to (PbBr3)nn- framework (ON1 state) and then carriers flowing in the re-arranged (TAZ-H)nn+ chain in 3D channels (ON2 state). The PVP treatment can not only modify the grain boundary defects, but also facilitate the transport of injected carriers to the perovskite films via Pb-O coordinated bonds and inhibition of order-disorder transformation. This facial strategy for implementing ternary perovskite-based memorizers with good ambient-air-stability is quite meaningful for high-density memory in harsh environments.
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Affiliation(s)
- Kaiyue Song
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Lingling Du
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Guoli Yue
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Tao Li
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Haohong Li
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China; Fujian Engineering Research Center of Advanced Manufacturing Technology for Fine Chemicals, College of Chemical Engineering, Fuzhou University, Fuzhou, Fujian 350108, China.
| | - Shoutian Zheng
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Zhirong Chen
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Huidong Zheng
- Qingyuan Innovation Laboratory, Quanzhou, Fujian 362801, China; Fujian Engineering Research Center of Advanced Manufacturing Technology for Fine Chemicals, College of Chemical Engineering, Fuzhou University, Fuzhou, Fujian 350108, China.
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10
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Lin S, Chen S, Ju Y, Xiang F, Wei W, Wang X, Xiang S, Zhang Z. Electrical bistability based on metal-organic frameworks. Chem Commun (Camb) 2022; 58:9971-9978. [PMID: 35984650 DOI: 10.1039/d2cc03097g] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Electrical bistability existing in biochemical networks is critical for the proper functionalization of living systems. The development of artificial materials with electrical bistability begun to attract much interest due to their broad application prospects, especially in the field of memristors. Metal-organic frameworks (MOFs) have advantages in regular pores, crystallinity, structural designability and easy functionalization, which can promote the construction of novel MOF-based memristors and facilitate a better understanding of switching mechanisms. Here, we highlight recent advances in electrically bistable MOFs as memristors, and discuss their switching mechanisms, including interfacial reaction, proton-transfer mechanism, metal ion migration, charge trapping/detrapping and other mechanisms. Challenges and future perspectives are also presented.
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Affiliation(s)
- Si Lin
- Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, China.
| | - Shimin Chen
- Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, China.
| | - Yan Ju
- Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, China.
| | - Fahui Xiang
- Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, China.
| | - Wuji Wei
- Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, China.
| | - Xue Wang
- Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, China.
| | - Shengchang Xiang
- Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, China.
| | - Zhangjing Zhang
- Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, China.
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11
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Highly dense Ni-MOF nanoflake arrays supported on conductive graphene/carbon fiber substrate as flexible microelectrode for electrochemical sensing of glucose. J Electroanal Chem (Lausanne) 2022. [DOI: 10.1016/j.jelechem.2022.116219] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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12
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Lian H, Cheng X, Hao H, Han J, Lau MT, Li Z, Zhou Z, Dong Q, Wong WY. Metal-containing organic compounds for memory and data storage applications. Chem Soc Rev 2022; 51:1926-1982. [PMID: 35083990 DOI: 10.1039/d0cs00569j] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
With the upcoming trend of Big Data era, some new types of memory technologies have emerged as substitutes for the traditional Si-based semiconductor memory devices, which are encountering severe scaling down technical obstacles. In particular, the resistance random access memory (RRAM) and magnetic random access memory (MRAM) hold great promise for the in-memory computing, which are regarded as the optimal strategy and pathway to solve the von Neumann bottleneck by high-throughput in situ data processing. As far as the active materials in RRAM and MRAM are concerned, organic semiconducting materials have shown increasing application perspectives in memory devices due to their rich structural diversity and solution processability. With the introduction of metal elements into the backbone of molecules, some new properties and phenomena will emerge accordingly. Consequently, the RRAM and MRAM devices based on metal-containing organic compounds (including the small molecular metal complexes, metallopolymers, metal-organic frameworks (MOFs) and organic-inorganic-hybrid perovskites (OIHPs)) have been widely explored and attracted intense attention. In this review, we highlight the fundamentals of RRAM and MRAM, as well as the research progress of the applications of metal-containing organic compounds in both RRAM and MRAM. Finally, we discuss the challenges and future directions for the research of organic RRAM and MRAM.
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Affiliation(s)
- Hong Lian
- MOE Key Laboratory of Advanced Display and System Applications, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai 200072, China.,School of Mechanical & Electronic Engineering and Automation, Shanghai University, 99 Shangda Road, Baoshan District, Shanghai 200444, China. .,MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China
| | - Xiaozhe Cheng
- MOE Key Laboratory of Advanced Display and System Applications, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai 200072, China.,MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China.,Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China.
| | - Haotian Hao
- MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China
| | - Jinba Han
- MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China
| | - Mei-Tung Lau
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China. .,The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
| | - Zikang Li
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China. .,The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
| | - Zhi Zhou
- School of Chemistry and Materials Science, Hunan Agricultural University, Changsha 410128, China.
| | - Qingchen Dong
- MOE Key Laboratory of Advanced Display and System Applications, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai 200072, China.,School of Mechanical & Electronic Engineering and Automation, Shanghai University, 99 Shangda Road, Baoshan District, Shanghai 200444, China. .,MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China
| | - Wai-Yeung Wong
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China. .,The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
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13
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Li YL, Xie FT, Yao C, Zhang GQ, Guan Y, Yang YH, Yang JM, Hu R. A DNA tetrahedral nanomaterial-based dual-signal ratiometric electrochemical aptasensor for the detection of ochratoxin A in corn kernel samples. Analyst 2022; 147:4578-4586. [DOI: 10.1039/d2an00934j] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
Ochratoxin A (OTA) is a highly toxic food contaminant and is harmful to human beings.
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Affiliation(s)
- Yu-Long Li
- College of Chemistry and Chemical Engineering, Yunnan Normal University, Kunming, 650500, P. R. China
| | - Fa-Ting Xie
- College of Chemistry and Chemical Engineering, Yunnan Normal University, Kunming, 650500, P. R. China
| | - Cao Yao
- College of Chemistry and Chemical Engineering, Yunnan Normal University, Kunming, 650500, P. R. China
| | - Gui-Qun Zhang
- College of Chemistry and Chemical Engineering, Yunnan Normal University, Kunming, 650500, P. R. China
| | - Yan Guan
- College of Chemistry and Chemical Engineering, Yunnan Normal University, Kunming, 650500, P. R. China
| | - Yun-Hui Yang
- College of Chemistry and Chemical Engineering, Yunnan Normal University, Kunming, 650500, P. R. China
| | - Jian-Mei Yang
- College of Chemistry and Chemical Engineering, Yunnan Normal University, Kunming, 650500, P. R. China
| | - Rong Hu
- College of Chemistry and Chemical Engineering, Yunnan Normal University, Kunming, 650500, P. R. China
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14
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Oh J, Yoon SM. Resistive Memory Devices Based on Reticular Materials for Electrical Information Storage. ACS APPLIED MATERIALS & INTERFACES 2021; 13:56777-56792. [PMID: 34842430 DOI: 10.1021/acsami.1c16332] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Recently, reticular materials, such as metal-organic frameworks and covalent organic frameworks, have been proposed as an active insulating layer in resistive switching memory systems through their chemically tunable porous structure. A resistive random access memory (RRAM) cell, a digital memristor, is one of the most outstanding emergent memory devices that achieves high-density electrical information storage with variable electrical resistance states between two terminals. The overall design of the RRAM devices comprises an insulating layer sandwiched between two metal electrodes (metal/insulator/metal). RRAM devices with fast switching speeds and enhanced storage density have the potential to be manufactured with excellent scalability owing to their relatively simple device architecture. In this review, recent progress on the development of reticular material-based RRAM devices and the study of their operational mechanisms are reviewed, and new challenges and future perspectives related to reticular material-based RRAM are discussed.
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Affiliation(s)
- Jongwon Oh
- Department of Chemistry, Wonkwang University, 460 Iksandae-ro, Iksan, Jeonbuk 54538, Republic of Korea
- Wonkwang Materials Institute of Science and Technology, 460 Iksandae-ro, Iksan, Jeonbuk 54538, Republic of Korea
| | - Seok Min Yoon
- Department of Chemistry, Wonkwang University, 460 Iksandae-ro, Iksan, Jeonbuk 54538, Republic of Korea
- Wonkwang Materials Institute of Science and Technology, 460 Iksandae-ro, Iksan, Jeonbuk 54538, Republic of Korea
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15
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Liu M, Xing Z, Li Z, Zhou W. Recent advances in core–shell metal organic frame-based photocatalysts for solar energy conversion. Coord Chem Rev 2021. [DOI: 10.1016/j.ccr.2021.214123] [Citation(s) in RCA: 23] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
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16
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Pan X, Bai L, Pan C, Liu Z, Ramakrishna S. Design, Fabrication and Applications of Electrospun Nanofiber-Based Surface-Enhanced Raman Spectroscopy Substrate. Crit Rev Anal Chem 2021; 53:289-308. [PMID: 34284659 DOI: 10.1080/10408347.2021.1950522] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/08/2023]
Abstract
Surface-enhanced Raman spectroscopy (SERS) is an advanced and powerful analysis tool. Due to the advantages of high sensitivity, high resolution, and nondestructive testing, it has been widely used in physics, chemistry, material science and other fields. In recent years, substantial progress has been made in developing flexible platforms for the design and fabrication of SERS substrates. One important kind of the flexible platforms is based on electrospun nanofibers. Electrospun nanofibers not only have unique advantages such as easy preparation, high porosity and large specific surface area, but also can increase the number of hotspots when combined with precious metal nanomaterials, thereby enhancing the SERS signal and expanding the application scope. In this review, we firstly focus on two strategies for the fabrication of metal nanostructure decorated in/on the electrospun nanofibers, namely in-situ and ex-situ. Then the applications of these SERS substrates in the fields of quantitative analysis, monitoring chemical reactions and recyclable detection are introduced in detail. Finally, the challenges as well as perspectives are presented to offer a guideline for the future exploration of these SERS substrates. We expect that it will provide new inspiration for the development of electrospun nanofiber-based SERS substrates.
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Affiliation(s)
- Xue Pan
- School of Materials Science and Engineering, Ocean University of China, Qingdao, China
| | - Lu Bai
- Institute for Chemical Biology & Biosensing, and College of Life Sciences, Qingdao University, Qingdao, China
| | - Chengcheng Pan
- School of Materials Science and Engineering, Ocean University of China, Qingdao, China
| | - Zhicheng Liu
- School of Materials Science and Engineering, Ocean University of China, Qingdao, China.,Department of Mechanical Engineering, National University of Singapore, Singapore, Singapore
| | - Seeram Ramakrishna
- Department of Mechanical Engineering, National University of Singapore, Singapore, Singapore
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