Thermoelectric Penta-Silicene with a High Room-Temperature Figure of Merit

A van der Waals p-n heterostructure of GaSe/SnS2: a high thermoelectric figure of merit and strong anisotropy

In recent years, van der Waals heterostructures (vdWHs) with controllable and peculiar properties have attracted extensive attention in the fields of electronics, optoelectronics, spintronics and electrochemistry. However, vdWHs with good thermoelectric performance are few due to the complex coupling of thermoelectric coefficients. Here, we employ density functional theory and Boltzmann's transport equation to explore the thermoelectric properties of the p-n vdWH of GaSe/SnS2, which has been experimentally observed to exhibit high performance as an optoelectronic device. We reveal that GaSe/SnS2 possesses strong anisotropy in terms of electronic transport resulting from the anisotropic carrier relaxation time. The longer carrier relaxation time in the y-direction for n-type induces a high power factor of 0.084 W m-1 K-2 at 300 K, while it is only 0.0087 W m-1 K-2) in the x-direction. The strong coupling of low-mid frequency phonon branches and the relatively weak Sn-S bond-induced anharmonicity hinder the phonon transport, which results in the lattice thermal conductivity of GaSe/SnS2 (14.61 and 15.43 W m-1 K-1 along the x- and y-directions at 300 K) being much smaller than the average value of GaSe and SnS2 (43.44 W m-1 K-1 at 300 K). The optimal thermoelectric figure of merit at 700 K for GaSe/SnS2 reaches 2.99, which is significantly higher than those of the constituents of GaSe (0.58) and SnS2 (1.04). The present work highlights the potential thermoelectric applications and the understanding of the thermoelectric transport mechanism for the recently synthesized p-n vdWH of GaSe/SnS2 with a high thermoelectric figure of merit and strong anisotropy.

Nanostructured Oxide (SnO2, FTO) Thin Films for Energy Harvesting: A Significant Increase in Thermoelectric Power at Low Temperature

Previous studies have shown that undoped and doped SnO2 thin films have better optical and electrical properties. This study aims to investigate the thermoelectric properties of two distinct semiconducting oxide thin films, namely SnO2 and F-doped SnO2 (FTO), by the nebulizer spray pyrolysis technique. An X-ray diffraction study reveals that the synthesized films exhibit a tetragonal structure with the (200) preferred orientation. The film structural quality increases from SnO2 to FTO due to the substitution of F- ions into the host lattice. The film thickness increases from 530 nm for SnO2 to 650 nm for FTO films. Room-temperature electrical resistivity decreases from (8.96 ± 0.02) × 10-2 Ω·cm to (4.64 ± 0.01) × 10-3 Ω·cm for the SnO2 and FTO thin films, respectively. This is due to the increase in the carrier density of the films, (2.92 ± 0.02) × 1019 cm-3 (SnO2) and (1.63 ± 0.03) × 1020 cm-3 (FTO), caused by anionic substitution. It is confirmed that varying the temperature (K) enhances the electron transport properties. The obtained Seebeck coefficient (S) increases as the temperature is increased, up to 360 K. The synthesized films exhibit the S value of -234 ± 3 μV/K (SnO2) and -204 ± 3 μV/K (FTO) at 360 K. The estimated power factor (PF) drastically increases from ~70 (μW/m·K2) to ~900 (μW/m·K2) for the SnO2 and FTO film, respectively.

Super-high carrier mobilities and excellent thermoelectric performances of Tri-Tri group-VA monolayers

High-performance thermoelectric materials in theoretical and experimental research are mostly composed of expensive, scarce, heavy elements and rarely of single light elements, which severely limit their application and development. Based on density functional and semiclassical Boltzmann transport theory, we determine that a stable phosphorene allotrope, named Tri-Tri phosphorene, has super-high electron mobility (23845.29 cm2 V-1 s-1) much higher than those of most two-dimension materials. Moreover, its optimized maximum ZT can reach up to 3.43 at room temperature (4.83 at 500 K and 5.92 at 700 K), exhibiting highly favorable prospects in practical thermoelectric systems. Motivated by the excellent properties of Tri-Tri phosphorene, we further demonstrate the structural stability of Tri-Tri arsenene and Tri-Tri antimonene and predict that the two Tri-Tri structures also have high Seebeck coefficients and electron mobilities. Their lattice thermal conductivities are dramatically decreased compared with Tri-Tri phosphorene. Thus, their predicted thermoelectric performances are also excellent, with maximum ZT values of 4.12 (Tri-Tri arsenene) and 3.54 (Tri-Tri antimonene) at room temperature. The low layer moduli of the three Tri-Tri structures indicate that they have high mechanical flexibility and suitability for current device assemblies. All these desirable properties make Tri-Tri group-VA materials promising for future applications in thermoelectric devices.

N-Nitrosamine sensing properties of novel penta-silicane nanosheets-a first-principles outlook

CONTEXT

N-Nitrosamine is one of the highly toxic carcinogenic compounds that are found almost in the entire environment. In the present work, novel penta-silicene (penta-Si) and penta-silicane (penta-HSi) are utilised to sense the N-nitrosamine in the air environment. Initially, structural firmness of penta-Si and penta-HSi is confirmed using cohesive energy. Subsequently, the electronic properties of penta-Si and penta-HSi are discussed with the aid of electronic band structure and projected density of states (PDOS) maps. The calculated band gap of penta-Si and penta-HSi is 0.251 eV and 3.117 eV, correspondingly. Mainly, the adsorption property of N-nitrosamine on the penta-Si and penta-HSi is studied based on adsorption energy, Mulliken population analysis along with relative energy gap changes. The computed adsorption energy range is in physisorption (- 0.101 to - 0.619 eV), which recommends that the proposed penta-Si and penta-HSi can be employed as a promising sensor to detect the N-nitrosamine in the air environment.

METHODS

The structural, electronic and adsorption behaviour of N-nitrosamine on penta-Si and penta-HSi are studied based on the density functional theory (DFT) approach. The hybrid generalized gradient approximation (GGA) with Becke's three-parameter (B3) + Lee-Yang-Parr (LYP) exchange correlation functional is used to optimise the base material. All calculations in the present work are carried out in Quantum-ATK-Atomistic Simulation Software.

Excellent thermoelectric properties of the Tl2S3 monolayer for medium-temperature applications

Exploring materials with high thermoelectric (TE) performance can alleviate energy pressure and protect the environment, and thus, TE materials have attracted extensive attention in the new energy field. In this paper, we systematically study the TE properties of Tl₂S₃ using first-principles combined with Boltzmann transport theory (BTE). The calculation results show an excellent power factor (1.12 × 10^-2 W m^-1 K^-2) and ultra-low lattice thermal conductivity (k_l = 0.88 W m^-1 K^-1) at room temperature. Through analysis, we attribute the ultra-low k_l of Tl₂S₃ to the lower phonon group velocity (v_g) and larger phonon anharmonicity. Meanwhile, discussion of chemical bonding showed that the filling of the anti-bonding state leads to the weakening of the Tl-S chemical bond, resulting in low v_g. Furthermore, this research also investigates the scattering processes (the out-of-plane acoustic mode (ZA) + optical mode (O) → O (ZA + O → O), the in-plane transverse acoustic mode (TA) + O → O (TA + O → O), and the in-plane longitudinal acoustic mode (LA) + O → O (LA + O → O)), from which we find that 2D Tl₂S₃ possesses strong acoustic-optical scattering. Based on the analysis of electron transport properties under electron-phonon coupling, 2D Tl₂S₃, as a novel TE material, exhibits a ZT value as high as 2.8 at 400 K. Our calculations suggest that Tl₂S₃ is a potential TE material at medium temperature.

Theoretical analysis of the thermoelectric properties of penta-PdX2 (X = Se, Te) monolayer

Based on the successful fabrication of PdSe2 monolayers, the electronic and thermoelectric properties of pentagonal PdX2 (X = Se, Te) monolayers were investigated via first-principles calculations and the Boltzmann transport theory. The results showed that the PdX2 monolayer exhibits an indirect bandgap at the Perdew–Burke–Ernzerhof level, as well as electronic and thermoelectric anisotropy in the transmission directions. In the PdTe2 monolayer, P-doping owing to weak electron–phonon coupling is the main reason for the excellent electronic properties of the material. The low phonon velocity and short phonon lifetime decreased the thermal conductivity (κl) of penta-PdTe2. In particular, the thermal conductivity of PdTe2 along the x and y transmission directions was 0.41 and 0.83 Wm−1K−1, respectively. Owing to the anisotropy of κl and electronic structures along the transmission direction of PdX2, an anisotropic thermoelectric quality factor ZT appeared in PdX2. The excellent electronic properties and low lattice thermal conductivity (κl) achieved a high ZT of the penta-PdTe2 monolayer, whereas the maximum ZT of the p- and n-type PdTe2 reached 6.6 and 4.4, respectively. Thus, the results indicate PdTe2 as a promising thermoelectric candidate.

Effect of High Order Phonon Scattering on the Thermal Conductivity and Its Response to Strain of a Penta-NiN2 Sheet

Motivated by the recent synthesis of penta-NiN₂, a new two-dimensional (2D) planar material entirely composed of pentagons [ ACS Nano 2021, 15, 13539], we study its thermal transport properties based on first-principles calculations and solving the Boltzmann transport equation within the self-consistent phonon theory and four-phonon scattering formalism. We find that the intrinsic lattice thermal conductivity of penta-NiN₂ is 11.67 W/mK at room temperature, which is reduced by 89.32% as compared to the value obtained by only considering three-phonon scattering processes. More interestingly, different from the general response of thermal conductivity to external strain in most 2D materials, an oscillatory decrease of the thermal conductivity with increasing biaxial tensile strain is observed, which can be attributed to the renormalization of vibrational frequencies and the nonmonotonic variation of phonon scattering rates. This work provides an accurate intrinsic thermal conductivity of penta-NiN₂ and elucidates the effects of the strain-tuned vibrational modes and phonon band gap on the four-phonon scattering processes, shedding light on a better understanding of the physical mechanisms of thermal transport properties in 2D pentagon-based materials.

Binary pentagonal auxetic materials for photocatalysis and energy storage with outstanding performances

Since the discovery of penta-graphene, two-dimensional (2-D) pentagonal-structured materials have been highly expected to have desirable performance because of their unique structures and accompanied physical properties. Hence, based on the first-principles calculations, we performed a systematical study on the structure, stability, mechanical and electronic properties, and potential applications on carbon-based pentagonal materials with binary compositions, namely, Penta-C_nX_6-n (n = 1, 2, 4, 5; X = B, N, Al, Si, P, Ga, Ge, As). We found that eleven out of thirty-two Penta-C_nX_6-n have good stability and can be further studied. Among them, two materials, namely, Penta-C₄P₂ and Penta-C₅P are metallic, and others are indirect band gap semiconductors, whose band gaps calculated by the HSE06 functional are in the range of 1.37-6.43 eV, covering the infrared-visible-ultraviolet regions. Furthermore, we found that metallic Penta-C_nX_6-n can become promising anode materials for Na-ion batteries (NIBs) with high storage capacity, while some semiconducting Penta-C_nX_6-n can become excellent water splitting photocatalysts. In addition, Penta-C₄P₂ and Penta-C₂Al₄ were found to have obvious in-plane negative Poisson's ratio (NPR) of -0.083 and -0.077, respectively. More interestingly, we found that Penta-C₂Al₄ exhibits a peculiar in-plane half negative Poisson's ratio (H-NPR) with the fundamental mechanism clarified. These outstanding performances endow binary pentagonal materials with excellent application prospects.

Thermoelectric performance of novel single-layer ZrTeSe4

Single-layer ZrTeSe4 is a novel 2D semiconductor as well as a promising candidate for 2D thermoelectric materials.

Ultrahigh thermoelectric performance of Janus α-STe2 and α-SeTe2 monolayers

Janus α-STe2 and α-SeTe2 monolayers are investigated systematically using first-principles calculations combined with semiclassical Boltzmann transport theory.

The thermoelectric properties of α-XP (X = Sb and Bi) monolayers from first-principles calculations

Thermoelectric (TE) materials as one of the effective solutions to the energy crisis are gaining more and more interest owing to their capability to generate electricity from waste heat without generating air pollution. In this work, the TE properties of α-XP monolayers such as the stability, electronic structure, electrical and phonon transport were thoroughly studied in combination with the first-principles calculations and Boltzmann transport equations. We found that α-SbP and α-BiP have indirect bandgaps of 0.85 eV and 0.73 eV, respectively, which are suitable for thermoelectric materials. Furthermore, due to the multiple valleys at the energy band edges and the high carrier mobility, α-XP possesses both large Seebeck coefficients and high electrical conductivities. It is also found that the lattice thermal conductivity of α-BiP is smaller than that of α-SbP due to lower phonon frequencies, smaller phonon group velocities, larger Grüneisen parameters and higher phonon relaxation times. High TE performance was achieved with the ZT values reaching 4.59 (for α-BiP at 500 K) and 1.34 (for α-SbP at 700 K). Our results quantify α-XP monolayers as promising candidates for building outstanding thermoelectric devices.

Promising thermoelectric candidate based on a CaAs3 monolayer: A first principles study

The CaAs₃ monolayer is a newly predicted two-dimensional material with attractive properties, such as a moderate direct bandgap, high carrier mobility, prominent visible-light absorption, etc. To evaluate its potential applications in thermoelectric (TE) fields, herein, the thermoelectric properties of CaAs₃ monolayers were comprehensively investigated by a first-principles method in combination with Boltzmann transport theory. Our calculated results indicate that the CaAs₃ monolayer has an exceptionally low lattice thermal conductivity of 0.44 W m^-1 K^-1 at 300 K, mainly because of the small group velocity and strong phonon-phonon scattering. The CaAs₃ monolayer also exhibits a high power factor due to the large Seebeck coefficient and electrical conductivity. Therefore, large ZT values of 1.72/1.58 were achieved for the n-type/p-type CaAs₃ monolayer at 800 K. Compared with conventional 2D TE materials, the CaAs₃ monolayer does not contain expensive heavy elements, which is beneficial for its practical applications as a TE material. Our results qualify the CaAs₃ monolayer as a promising candidate for building excellent 2D TE devices.

Strain engineering of polar optical phonon scattering mechanism - an effective way to optimize the power-factor and lattice thermal conductivity of ScN

The tug-of-war between the thermoelectric power factor and the figure-of-merit complicates thermoelectric material selection, particularly for mid-to-high temperature thermoelectric materials. Approaches to reduce lattice thermal conductivity while maintaining a high-power factor are crucial in thermoelectric applications. Using strain engineering, we comprehensively investigated the microscopic mechanisms influencing the lattice thermal conductivity in this study. Scandium nitride (ScN) was chosen for this purpose since it has recently been discovered to be a potential mid-to-high temperature thermoelectric material. Our precise DFT+U calculations showed the exact electronic direct and indirect band gaps in ScN, which was subsequently subjected to compressive and tensile volume strain (up to 2%) within the crystal structure. Relevant thermoelectric properties such as Seebeck coefficient and electrical conductivity were obtained from both strained and unstrained ScN, whilst incorporating three key scattering sources, namely, ionized impurity (IMP), acoustic deformation potential (ADP), and polar optical phonon (POP). Based on the calculated scattering rates, we found that a POP scattering source is the dominant scattering mechanism that has a significant impact on transport properties at high temperatures. Our study revealed that modifying this POP scattering mechanism through strain in ScN has a considerable impact on the variation of lattice thermal conductivity without much reduction in the thermoelectric power factor values. A detailed description was provided with a focus on understanding the effects of strain on the scattering rates and thermoelectric properties of ScN.

Theoretical investigations of novel Janus Pb2SSe monolayer as a potential multifunctional material for piezoelectric, photovoltaic, and thermoelectric applications

Two-dimensional Janus nanomaterials, due to their unique electronic, optical, and piezoelectric characteristics resulting from the antisymmetric structures, exhibit great prospects in multifunctional energy application to alleviate the energy crisis. Monolayer Janus Pb₂SSe, with a black phosphorus-like structure and an indirect band gap of 1.59 eV as well as high carrier mobility (526-2105 cm² V^-1 s^-1), displays outstanding potentials in the energy conversion between nanomechanical energy, solar energy, waste heat, and electricity, which has been comprehensively studied utilizing DFT-based simulations. The research results reveal that monolayer Pb₂SSe not only possesses giant in-plane piezoelectricity of d₁₁ = 75.1 pm V^-1 but also superhigh out-of-plane piezoelectric coefficients (d₃₁ = 0.5 pm V^-1 and d₃₃ = 15.7 pm V^-1). Meanwhile, by constructing Pb₂SSe bilayers, the out-of-plane piezoelectric coefficients can be significantly enhanced (d₃₁ = 19.2 pm V^-1 and d₃₃ = 194.7 pm V^-1). In addition, owing to the small conduction band offset, suitable donor band gap and excellent light absorption capability in the Pb₂SSe/SnSe (Pb₂SSe/GeSe) heterostructure, the power conversion efficiencies were calculated to be up to 20.02% (Pb₂SSe/SnSe) and 19.28% (Pb₂SSe/GeSe), making it a promising candidate for solar energy collection. Furthermore, from the thermoelectric electron and phonon transport calculations, it can be found that the Pb₂SSe monolayer is an n-type thermoelectric material with ultrahigh ZT = 2.19 (1.52) at room temperature, which can be traced back to its ultralow κ_L = 0.78 (0.99) W m^-1 K^-1, and superhigh PF = 10.18 (8.25) mW m^-1 K^-2 along the x(y) direction at the optimal doping concentration at 300 K. The abovementioned versatile characteristics in the Janus Pb₂SSe monolayer, along with its comprehensive stabilities (energy, dynamic, thermal, and mechanical stabilities), highlight its potential in clean energy harvesting.

Phonon Transport and Thermoelectric Properties of Imidazole-Graphyne

The pentagon has been proven to be an important structural unit for carbon materials, leading to different physical and chemical properties from those of hexagon-based allotropes. Following the development from graphene to penta-graphene, a breakthrough has very recently been made for graphyne—for example, imidazole-graphyne (ID-GY) was formed by assembling experimentally synthesized pentagonal imidazole molecules and acetylenic linkers. In this work, we study the thermal properties and thermoelectric performance of ID-GY by combining first principle calculations with the Boltzmann transport theory. The calculated lattice thermal conductivity of ID-GY is 10.76 W/mK at 300 K, which is only one tenth of that of γ-graphyne (106.24 W/mK). A detailed analysis of the harmonic and anharmonic properties, including the phonon group velocity, phonon lifetime, atomic displacement parameter, and bond energy curves, reveals that the low lattice thermal conductivity can be attributed to the low Young’s modulus, low Debye temperature, and high Grüneisen parameter. Furthermore, at room temperature, ID-GY can reach a high ZT value of 0.46 with a 5.8 × 10¹² cm⁻² hole concentration, which is much higher than the value for many other carbon-based materials. This work demonstrates that changing structural units from hexagonal to pentagonal can significantly reduce the lattice thermal conductivity and enhance the thermoelectric performance of carbon-based materials.

Bishop's hat silicene: a planar square silicon bilayer decorated with adatoms

We investigate a family of free-standing quasi-two-dimensional silicon structures based on a planar square bilayer with adatom decorations. When attached to the bilayer, these adatoms form local reconstructions which resemble either a bishop's hat or elongated square bipyramids. We systematically constructed members of this family via exhaustive enumeration and then studied them using tight-binding and density-functional theory. We find that this geometry contributes significantly to the stability of the resulting structures, with some squared bilayers energetically more stable than the honeycomb bilayers. The most interesting phases were then characterized in more detail, and they all turned out metallic. Finally, we propose the [100] surface of ZrO2 as the most suitable substrate for the synthesis of these two-dimensional phases.

Observation of Anisotropic Magnetoresistance in Layered Nonmagnetic Semiconducting PdSe2

Anisotropy in crystals usually has remarkable consequences in two-dimensional (2D) materials, for example, black phosphorus, PdSe₂, and SnS, arising from different lattice periodicities along different crystallographic directions. Electrical anisotropy has been successfully demonstrated in 2D materials, but anisotropic magnetoresistance in 2D materials is rarely studied. Herein, we report anisotropic magnetoresistance in layered nonmagnetic semiconducting PdSe₂ flakes. Anisotropic magnetoresistance along the two crystalline axes under a perpendicular magnetic field is demonstrated, and the magnetoresistance along the a-axis is apparently different from the magnetoresistance along the b-axis. The magnetoresistance can also be flexibly tuned by applying a gate voltage, leveraging the semiconductor properties of PdSe₂. The computed anisotropic electronic density of states and electronic mobility with ab initio density functional calculations support the anisotropic and measured magnetoresistance. Our findings advance the understanding of magnetoresistance in anisotropic transition-metal dichalcogenides and pave the way for potential applications in anisotropic spintronic devices.

Exceptionally high open circuit thermoelectric figure of merit in two-dimensional tin sulphide

Thermoelectric materials with high values of power factor and thermoelectric figure of merit (ZT) are in great demand to make efficient thermoelectric devices. In this work, we explore the thermoelectric transport properties of layered tin sulphide (SnS) using first-principles method combined with Boltzmann transport theory. Our calculations show that the two-dimensional (2D) SnS materials have exceptionally high charge carrier mobilities and low lattice thermal conductivities as compared to other 2D materials such as graphene, phosphorene, MoS₂, etc. Consequently, these 2D SnS materials have high power factor andZTvalues.

Anisotropic Thermoelectric Materials: Pentagonal PtM2 (M = S, Se, Te)

We here report a new pentagonal network structure of the PtM₂ (M = S, Se, Te) monolayers with the P2₁/c (no. 14) space group. The electronic structure and thermoelectric properties of the pentagonal PtM₂ monolayers are calculated through the VASP and BoltzTraP codes. We verify their dynamic and thermodynamic stabilities by calculating their phonon spectra and simulating ab initio molecular dynamics. It is found that the new material belongs to the medium-wide indirect band gap semiconductors from the PBE and HSE06 methods. At 300 K, the lattice thermal conductivities (K_l) of the pentagonal PtTe₂ in the x and y directions are the smallest among these three materials, being 1.77 and 5.17 W/m K, respectively. The anisotropic zT values (2.60/1.14) in the x/y direction of the pentagonal PtTe₂ at 300 K are much greater than those of the pentagonal PtSe₂ (1.75/0.82) and the pentagonal PtS₂ (0.58/0.16) at 300 K. Importantly, the p-type pentagonal PtTe₂ also has excellent thermoelectric properties at 600 K, with a zT value of 5.03 in the x direction, indicating that the p-type pentagonal PtTe₂ has a good application potential in the thermoelectric field.

Strain-Induced Ultrahigh Electron Mobility and Thermoelectric Figure of Merit in Monolayer α-Te

In line with the classic phonon-glass electron-crystal (PGEC) paradigm, semiconducting and semimetallic multinary compounds remain the cornerstone of the state-of-the-art thermoelectric materials. By contrast, elemental PGEC is very rare. In this work, we report a thermoelectric study of monolayer α-Te by first-principles calculations and solving the parameter-free Boltzmann transport equation. It is found that monolayer α-Te possesses high electron mobility (about 2500 cm² V^-1 s^-1) at room temperature due to small effective mass, low phonon frequencies, and thus a restricted phase space for electron-phonon scattering. In monolayer α-Te, the electrons near the conduction band edge are mainly scattered by the heavily populated quadratically dispersing out-of-plane acoustic (ZA) phonon modes. The thermoelectric figure of merit (ZT) for n-type monolayer α-Te is 0.55 at 300 K and 1.46 at 700 K. Notably, tensile strain stiffens the ZA modes, yielding a linear energy-momentum dispersion relation and the removal of the diverging thermal population of ZA phonons. Consequently, the electron mobility is enhanced. At a 4% tensile strain, the electron mobility can reach up to 8000 cm² V^-1 s^-1 at room temperature while the thermal conductivity is almost unaffected, yielding a state-of-the-art ZT value of 0.94 and 2.03 in n-type monolayer α-Te at 300 and 700 K, respectively. For completeness, the thermoelectric study of p-type monolayer α-Te is also conducted. These results beckon further experiments toward high-performance α-Te-based thermoelectric materials via doping, alloying, and compositing.

Thermal transport properties of novel two-dimensional CSe

Recently, as a novel member of the IV-VI group compounds, two-dimensional (2D) buckled monolayer CSe has been discovered for use in high-performance light-emitting devices (Q. Zhang, Y. Feng, X. Chen, W. Zhang, L. Wu and Y. Wang, Nanomaterials, 2019, 9, 598). However, to date, the heat transport properties of this novel CSe is still lacking, which would hinder its potential application in electronic devices and thermoelectric materials that can generate electricity from waste heat. Here we systematically study the heat transport properties of monolayer CSe based on ab initio calculations and phonon Boltzmann transport theory. We find that the lattice thermal conductivity κlat of monolayer CSe is around 42 W m-1 K-1 at room temperature, which is much lower than those of black phosphorene, buckled phosphorene, MoS2, and buckled arsenene. Moreover, the longitudinal acoustic phonon mode contributes the most to the κlat, which is much larger than those of the out-of-plane phonon mode and transverse acoustic branches. The calculated size-dependent κlat shows that the sample size can significantly reduce the κlat of monolayer CSe and can persist up to 10 μm. These discoveries provide new insight into the size-dependent thermal transport in nanomaterials and guide the design of CSe-based low-dimensional quantum devices, such as thermoelectric devices.