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Deva Arun Kumar K, Valanarasu S, Capelle A, Nar S, Karim W, Stolz A, Aspe B, Semmar N. Nanostructured Oxide (SnO 2, FTO) Thin Films for Energy Harvesting: A Significant Increase in Thermoelectric Power at Low Temperature. Micromachines (Basel) 2024; 15:188. [PMID: 38398917 PMCID: PMC10890522 DOI: 10.3390/mi15020188] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2023] [Revised: 01/20/2024] [Accepted: 01/23/2024] [Indexed: 02/25/2024]
Abstract
Previous studies have shown that undoped and doped SnO2 thin films have better optical and electrical properties. This study aims to investigate the thermoelectric properties of two distinct semiconducting oxide thin films, namely SnO2 and F-doped SnO2 (FTO), by the nebulizer spray pyrolysis technique. An X-ray diffraction study reveals that the synthesized films exhibit a tetragonal structure with the (200) preferred orientation. The film structural quality increases from SnO2 to FTO due to the substitution of F- ions into the host lattice. The film thickness increases from 530 nm for SnO2 to 650 nm for FTO films. Room-temperature electrical resistivity decreases from (8.96 ± 0.02) × 10-2 Ω·cm to (4.64 ± 0.01) × 10-3 Ω·cm for the SnO2 and FTO thin films, respectively. This is due to the increase in the carrier density of the films, (2.92 ± 0.02) × 1019 cm-3 (SnO2) and (1.63 ± 0.03) × 1020 cm-3 (FTO), caused by anionic substitution. It is confirmed that varying the temperature (K) enhances the electron transport properties. The obtained Seebeck coefficient (S) increases as the temperature is increased, up to 360 K. The synthesized films exhibit the S value of -234 ± 3 μV/K (SnO2) and -204 ± 3 μV/K (FTO) at 360 K. The estimated power factor (PF) drastically increases from ~70 (μW/m·K2) to ~900 (μW/m·K2) for the SnO2 and FTO film, respectively.
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Affiliation(s)
- Karuppiah Deva Arun Kumar
- Groupe de Recherches sur l’Énergétique des Milieux Ionisés, GREMI, Université d’Orléans, CNRS, 14 Rue d’Issoudun, 45067 Orléans, France (S.N.); (W.K.); (B.A.)
- Department of Physics, Arul Anandar College, Madurai 625514, India
| | - S. Valanarasu
- Department of Physics, Arul Anandar College, Madurai 625514, India
| | - Alex Capelle
- Groupe de Recherches sur l’Énergétique des Milieux Ionisés, GREMI, Université d’Orléans, CNRS, 14 Rue d’Issoudun, 45067 Orléans, France (S.N.); (W.K.); (B.A.)
| | - Sibel Nar
- Groupe de Recherches sur l’Énergétique des Milieux Ionisés, GREMI, Université d’Orléans, CNRS, 14 Rue d’Issoudun, 45067 Orléans, France (S.N.); (W.K.); (B.A.)
- Laboratoire Nanotechnologies et Nanosystèmes (LN2)-CNRS IRL-3463, Université de Sherbrooke, Sherbrooke, QC J1K OA5, Canada
| | - Wael Karim
- Groupe de Recherches sur l’Énergétique des Milieux Ionisés, GREMI, Université d’Orléans, CNRS, 14 Rue d’Issoudun, 45067 Orléans, France (S.N.); (W.K.); (B.A.)
| | - Arnaud Stolz
- Groupe de Recherches sur l’Énergétique des Milieux Ionisés, GREMI, Université d’Orléans, CNRS, 14 Rue d’Issoudun, 45067 Orléans, France (S.N.); (W.K.); (B.A.)
| | - Barthélemy Aspe
- Groupe de Recherches sur l’Énergétique des Milieux Ionisés, GREMI, Université d’Orléans, CNRS, 14 Rue d’Issoudun, 45067 Orléans, France (S.N.); (W.K.); (B.A.)
| | - Nadjib Semmar
- Groupe de Recherches sur l’Énergétique des Milieux Ionisés, GREMI, Université d’Orléans, CNRS, 14 Rue d’Issoudun, 45067 Orléans, France (S.N.); (W.K.); (B.A.)
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Ravikumar M, Ganesh V, Shkir M, Chandramohan R, Arun Kumar KD, Valanarasu S, Kathalingam A, AlFaify S. Fabrication of Eu doped CdO [Al/Eu-nCdO/p-Si/Al] photodiodes by perfume atomizer based spray technique for opto-electronic applications. J Mol Struct 2018. [DOI: 10.1016/j.molstruc.2018.01.095] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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David Prabu R, Valanarasu S, Ganesh V, Shkir M, AlFaify S, Kathalingam A. Investigation of molar concentration effect on structural, optical, electrical, and photovoltaic properties of spray-coated Cu2
O thin films. SURF INTERFACE ANAL 2018. [DOI: 10.1002/sia.6374] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- R. David Prabu
- PG and Research Department of Physics; Arul Anandar College; Karumathur Madurai India
| | - S. Valanarasu
- PG and Research Department of Physics; Arul Anandar College; Karumathur Madurai India
| | - V. Ganesh
- Advanced Functional Materials and Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science; King Khalid University; PO Box 9004 Abha Saudi Arabia
| | - Mohd Shkir
- Advanced Functional Materials and Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science; King Khalid University; PO Box 9004 Abha Saudi Arabia
| | - S. AlFaify
- Advanced Functional Materials and Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science; King Khalid University; PO Box 9004 Abha Saudi Arabia
| | - A. Kathalingam
- Millimeter-Wave Innovation Technology Research Centre (MINT); Dongguk University; Seoul 04620 South Korea
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Arulanantham A, Valanarasu S, Jeyadheepan K, Ganesh V, Shkir M. Development of SnS (FTO/CdS/SnS) thin films by nebulizer spray pyrolysis (NSP) for solar cell applications. J Mol Struct 2018. [DOI: 10.1016/j.molstruc.2017.09.077] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
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Ravikumar M, Chandramohan R, Valanarasu S, Manogowri R, Kathalingam A. Substrate temperature dependent opto-electronic properties of perfume atomized CdO thin films. INORG NANO-MET CHEM 2017. [DOI: 10.1080/24701556.2017.1357600] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2022]
Affiliation(s)
- M. Ravikumar
- Department of Physics, Arumugam Pillai Seethai Ammal College, Tiruppattur, India
| | - R. Chandramohan
- Department of Physics, Sree Sevugan Annamalai College, Devakottai, India
| | - S. Valanarasu
- PG and Research Department of Physics, Arul Anandar College, Karumathur, India
| | - R. Manogowri
- Jayaraj Annapackiam College for Women, Periyakulam, India
| | - A. Kathalingam
- Millimeter-Wave Innovation Technology Research Center (MINT), Dongguk University, Seoul, Republic of Korea
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Valanarasu S, Kathaiingam A, Rhee JK, Chandramohan R, Vijayan TA, Karunakaran M. Improved Memory Effect of ZnO Nanorods Embedded in an Insulating Polymethylmethacrylate Layer. J Nanosci Nanotechnol 2015; 15:1416-20. [PMID: 26353665 DOI: 10.1166/jnn.2015.9034] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Fabrication and characterization of memory devices using ZnO nanorod layer grown by chemical-bath method is reported. The fabricated memory device was found exhibit electrical bistability and nonvolatile memory phenomenon. An additional Polymethylmethacrylate (PMMA) polymer layer coated on ITO substrate prior to nanorod deposition has been found improve the LRS/HRS ratio of the device. The current-voltage characteristics of the memory devices are discussed in terms of formation and rupture of conductive filaments. The devices have shown consistent electrical bistable behavior even for 10(5) resistance-switching cycles. This hybrid ITO/PMMA-ZnO NRs/Al device has potential applications in the field of bistable random access memories.
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Valanarasu S, Dhanasekaran V, Karunakaran M, Chandramohan R, Mahalingam T. Role of solution pH on the microstructural properties of spin coated cobalt oxide thin films. J Nanosci Nanotechnol 2014; 14:4286-4291. [PMID: 24738384 DOI: 10.1166/jnn.2014.8284] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Cobalt Oxide (Co3o4) thin films have been successfully coated onto glass substrates at various solution pH by sol-gel spin coating technique. The film thickness was estimated using weight gain method and it revealed that the film thickness increased with solution pH values. The prepared film structural, morphological, optical and electrical properties were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), UV-Vis-NIR spectrophotometer and Vander Pau method, respectively. The structure of the films were found to be face centered cubic with preferential orientation along (311) plane. X-ray line profile analysis was used to evaluate the micro structural parameters such as crystallite size, micro strain, dislocation density and stacking fault probability. The crystallite size values are increased with increase of solution pH values and maximum value of crystallite is estimated at 40.8 nm at solution pH 8 +/- 0.1. Morphological results showed that the pH of the solution has a marked effect on morphology of the Co3O4 thin films. The optical studies revealed that the band gap can be tailored between 2.16 to 2.31 eV by altering pH. The thin film formed at a solution pH 7 is found to have a low resistivity and high mobility. The electrical resistivity (p), carrier concentration (n) and mobility (micro) values are 0.1 x 10(3) omega x cm, 8.9 cm2 gammas(-1) and 6.6 x 10(14) cm(-3), respectively for Co3O4 thin film prepared at solution pH 7 +/- 0.1. EDAX studies showed that the cobalt content increased and the oxygen content decreased with increase of pH.
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Valanarasu S, Kulandaisamy I, Kathalingam A, Rhee JK, Vijayan TA, Chandramohan R. High-performance memory device using graphene oxide flakes sandwiched polymethylmethacrylate layers. J Nanosci Nanotechnol 2013; 13:6755-6759. [PMID: 24245139 DOI: 10.1166/jnn.2013.7740] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Organic bistable devices (OBDs) using graphene oxide (GO) flakes sandwiched polymethylmethacrylate (PMMA) films were fabricated. These devices exhibited two accessible conducting states, that is, a low-conductivity (OFF) state and a high-conductivity (ON) state. The devices can be switched to ON state under a negative electrical sweep; it can also be reset to the initial OFF state by a reverse (positive) electrical sweep. Detailed I-V measurements have shown that in ITO/PMMA/GO/PMMA/Al sandwiches the resistive switching originates from the formation and rupture of conducting filaments. The ON/OFF ratio of the OBDs was approximately 5 x 10(3), reproducibility of more than 10(5) cycles, and retention time of 10(4) s. These properties show that the device is promising for high-density, low-cost memory application.
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Affiliation(s)
- S Valanarasu
- Department of Physics, Arul Anandar College, Karumathur, Madurai 625514, India
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Valanarasu S, Dhanasekaran V, Chandramohan R, Kulandaisamy I, Sakthivelu A, Mahalingam T. Variation of microstructural and optical properties in SILAR grown ZnO thin films by thermal treatment. J Nanosci Nanotechnol 2013; 13:5613-5619. [PMID: 23882804 DOI: 10.1166/jnn.2013.7473] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
The influence of thermal treatment on the structural and morphological properties of the ZnO films deposited by double dip Successive ionic layer by adsorption reaction is presented. The effect of annealing temperature and time in air ambient is presented in detail. The deposited films were annealed from 200 to 400 degrees C in air and the structural properties were determined as a function of annealing temperature by XRD. The studies revealed that films were exhibiting preferential orientation along (002) plane. The other structural parameters like the crystallite size (D), micro strain (epsilon), dislocation density (delta) and stacking fault (alpha) of as-deposited and annealed ZnO films were evaluated and reported. The optical properties were also studied and the band gap of the ZnO thins films varied from 3.27 to 3.04 eV with the annealing temperature. SEM studies revealed that the hexagonal shaped grains with uniformly distributed morphology in annealed ZnO thin films. It has been envisaged using EDX analysis that the near stoichiometric composition of the film can be attained by thermal treatment during which microstructural changes do occur.
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Affiliation(s)
- S Valanarasu
- Department of Physics, Arul Anandar College, Karumathur 625514, India
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Chandramohan R, Thirumalai J, Vijayan TA, Valanarasu S, Vizhian SE, Srikanth M, Swaminathan V. Nanocrystalline Mg Doped ZnO Dilute Magnetic Semiconductor Prepared by Chemical Route. ACTA ACUST UNITED AC 2010. [DOI: 10.1166/asl.2010.1129] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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