Controlling Exciton and Valley Dynamics in Two-Dimensional Heterostructures with Atomically Precise Interlayer Proximity

Correlation-driven nonequilibrium exciton site transition in a WSe2/WS2 moiré supercell

Moiré superlattices of transition metal dichalcogenides offer a unique platform to explore correlated exciton physics with optical spectroscopy. Whereas the spatially modulated potentials evoke that the exciton resonances are distinct depending on a site in a moiré supercell, there have been no clear demonstration how the moiré excitons trapped in different sites dynamically interact with the doped carriers; so far the exciton-electron dynamic interactions were presumed to be site-dependent. Thus, the transient emergence of nonequilibrium correlations are open questions, but existing studies are limited to steady-state optical measurements. Here we report experimental fingerprints of site-dependent exciton correlations under continuous-wave as well as ultrashort optical excitations. In near-zero angle-aligned WSe2/WS2 heterobilayers, we observe intriguing polarization switching and strongly enhanced Pauli blocking near the Mott insulating state, dictating the dominant correlation-driven effects. When the twist angle is near 60°, no such correlations are observed, suggesting the strong dependence of atomic registry in moiré supercell configuration. Our studies open the door to largely unexplored nonequilibrium correlations of excitons in moiré superlattices.

Ultrafast Interlayer Charge Transfer Outcompeting Intralayer Valley Relaxation in Few-Layer 2D Heterostructures

While 2D transition metal dichalcogenides (TMDs) feature interesting layer-tunable multivalley band structures, their preeminent role in determining the photoexcitation charge transfer dynamics in 2D heterostructures (HSs) is yet to be unraveled, as previous charge transfer studies on TMD HSs have been mostly focused on monolayers with a direct bandgap at the K valley. By ultrafast transient absorption spectroscopy and deliberately designed few-layer WSe2/WS2 HSs, we have observed an ultrafast interlayer electron transfer from photoexcited few-layer WSe2 to WS2, prior to intralayer relaxation to lower lying dark valleys. More interestingly, we have identified an unconventional ∼0.5 ps electron back-transfer process after the initial interlayer electron transfer in HSs with WSe2 layers ≥ 3, regenerating indirect intralayer excitons. The result reveals an ielectron and valley relaxation pathway mediated by interlayer charge transfer in 2D HSs, faster than intralayer relaxation. It also sheds light on the origin of generally observed robust ultrafast interlayer charge transfer in TMD HSs and provides guidance toward optoelectronic and valleytronic devices using few-layer TMDs.

Modulation of Charge Transport from Two-Dimensional Perovskites to Industrial Charge Transport Layers by the Organic Spacer-Dependent Exciton-Phonon Interactions

In the past decade, two-dimensional (2D) perovskite surface treatment has emerged as a promising strategy to improve the performance of three-dimensional (3D) perovskite solar cells (PSCs). However, systematic studies on the impact of organic spacers of 2D perovskites on charge transport in 2D/3D PSCs are still lacking. Here, using 2D perovskite film/C60 heterostructures with different organic spacers [butylamine (BA), phenylethylamine (PEA), and 3-fluorophenethylamine (m-F-PEA)], we systematically investigated the carrier diffusion and interfacial transfer process. Using a 2D perovskite film with a thickness of ∼7 nm, we observed subtle differences in electron transfer time between 2D perovskites and C60 layers, which can be attributed to limited thickness and similar electron coupling strength. However, with the thickness of 2D perovskite increasing, electron transfer efficiency in the (BA)2PbI4/C60 heterostructure exhibits the most rapid decrease due to poor carrier diffusion of (BA)2PbI4 caused by stronger exciton-phonon interactions compared to (PEA)2PbI4 and (m-F-PEA)2PbI4 in thickness-dependent charge transfer research. Meanwhile, the fill factor of 2D/3D PSC treated with BAI exhibits the most rapid decrease compared to PEAI- and m-F-PEAI-treated 2D/3D PSCs with the concentration increase of passivators. This study indicates that it is easier to enhance open-circuit voltages and minimize the decrease of fill factor by increasing the concentration of passivators in 2D/3D PSCs when using passivators with a rigid molecular structure.

Above 100% Efficiency Photocharge Generation in Monolayer Semiconductors by Singlet Fission Sensitization

Sensitizing inorganic semiconductors using singlet fission (SF) materials, which produce two excitons from one absorbed photon, can potentially boost their light-to-electricity conversion efficiency. The SF sensitization is particularly exciting for two-dimensional (2D) layered semiconductors with atomically flat surface and high carrier mobility but limited light absorption. However, efficiently harnessing triplet excitons from SF by charge transfer at organic/inorganic interface has been challenging, and the intricate interplay among competing processes remains unresolved. Here, we investigate SF sensitization in high-quality organic/2D bilayer heterostructures featuring TIPS-Pc single crystals. Through transient magneto-optical spectroscopy, we demonstrate that despite an ultrafast SF process in sub-100 fs, a significant fraction of singlet excitons in TIPS-Pc dissociate at the interface before fission, while triplet excitons from SF undergo diffusion-limited charge transfer at the interface in ∼10 ps to ns. Remarkably, the photocharge generation efficiency reaches 126% in heterostructures with optimal thickness, resulting from the competitive interplay between singlet exciton fission, dissociation, and triplet exciton transport. This presents a promising strategy for advancing SF-enhanced 2D optoelectronics beyond the conventional limits.

Probing the interlayer excitation dynamics in WS2/WSe2 heterostructures with broadly tunable pump and probe energies

van der Waals heterostructures based on transition metal dichalcogenides (TMDs) provide a fascinating platform for exploring new physical phenomena and novel optoelectronic functionalities. Revealing the energy-dependence of photocarrier population dynamics in heterostructures is key for developing optoelectronic or valleytronic devices. Here, the broadband transient dynamics of interlayer excitation of a nearly-aligned WS2/WSe2 heterostructure is investigated by using energy-dependent pump-probe spectroscopy at cryogenic temperatures. Interestingly, WS2/WSe2 interlayer excitation, herein comprising a mixture of intra- and inter-layer excitons, exhibits largely constant lifetimes of a few hundred picoseconds across a broad energy range, in stark contrast to the salient energy-dependent dynamics of intralayer excitons in monolayer WSe2. While the PL emission of the WS2/WSe2 heterostructure is found to be strongly affected by electrostatic doping, the lifetimes of interlayer excitation show negligible changes. Our work elaborates the signatures of ultrafast dynamics introduced by intra- and interlayer co-existing excitonic species and enriches the understanding of interlayer couplings in van der Waals heterostructures.

Strain-Dependent Band Splitting and Spin-Flip Dynamics in Monolayer WS2

Triggered by the expanding demands of semiconductor devices, strain engineering of two-dimensional transition metal dichalcogenides (TMDs) has garnered considerable research interest. Through steady-state measurements, strain has been proved in terms of its modulation of electronic energy bands and optoelectronic properties in TMDs. However, the influence of strain on the spin-orbit coupling as well as its related valley excitonic dynamics remains elusive. Here, we demonstrate the effect of strain on the excitonic dynamics of monolayer WS₂ via steady-state fluorescence and transient absorption spectroscopy. Combined with theoretical calculations, we found that tensile strain can reduce the spin-splitting value of the conduction band and lead to transitions between different exciton states via spin-flip mechanism. Our findings suggest that the spin-flip process is strain-dependent, provides a reference for application of valleytronic devices, where tensile strain is usually existing during their design and fabrication.

Two Janus Ga2STe monolayers and their electronic, optical, and photocatalytic properties

Recently, two-dimensional Janus materials have attracted increasing interest due to their unique structure and novel properties. Based on density-functional and many-body perturbation theories (i.e. DFT + G₀W₀ + BSE methods), the electronic, optical, and photocatalytic properties of Janus Ga₂STe monolayers with two configurations are explored systematically. It is found that the two Janus Ga₂STe monolayers exhibit high dynamical and thermal stabilities and have desirable direct gaps of about 2 eV at the G₀W₀ level. Their optical absorption spectra are dominated by the enhanced excitonic effects, in which bright bound excitons possess moderate binding energies of about 0.6 eV. Most interestingly, Janus Ga₂STe monolayers show high light absorption coefficients (larger than 10⁶ cm^-1) in the visible light region, effective spatial separation of photoexcited carriers, and suitable band edge positions, which make them potential candidates for photoelectronic and photocatalytic devices. These observed findings enrich the deep understanding of the properties of Janus Ga₂STe monolayers.

Band Alignment Engineering by Twist Angle and Composition Modulation for Heterobilayer

Atomically thin monolayer semiconducting transition metal dichalcogenides (TMDs), exhibiting direct band gap and strong light-matter interaction, are promising for optoelectronic devices. However, an efficient band alignment engineering method is required to further broaden their practical applications as versatile optoelectronics. In this work, the band alignment of two vertically stacked monolayer TMDs using the chemical vapor deposition (CVD) method is effectively tuned by two strategies: 1) formulating the compositions of MoS_2(1-x) Se_2x alloys, and 2) varying the twist angles of the stacked heterobilayer structures. Photoluminescence (PL) results combined with density functional theory (DFT) calculation show that by changing the alloy composition, a continuously tunable band alignment and a transition of type II-type I-type II band alignment of TMD heterobilayer is achieved. Moreover, only at moderate (10°-50°) twist angles, a PL enhancement of 28%-110% caused by the type I alignment is observed, indicating that the twist angle is coupled with the global band structure of heterobilayer. A heterojunction device made with MoS_0.76 Se_1.24 /WS₂ of 14° displays a significantly high photoresponsivity (55.9 A W^-1 ), large detectivity (1.07 × 10¹⁰ Jones), and high external quantum efficiency (135%). These findings provide engineering tools for heterostructure design for their application in optoelectronic devices.

Long-range transport and ultrafast interfacial charge transfer in perovskite/monolayer semiconductor heterostructure for enhanced light absorption and photocarrier lifetime

Atomically thin two-dimensional transition metal dichalcogenides (TMDs) have shown great potential for optoelectronic applications, including photodetectors, phototransistors, and spintronic devices. However, the applications of TMD-based optoelectronic devices are severely restricted by their weak light absorption and short exciton lifetime due to their atomically thin nature and strong excitonic effect. To simultaneously enhance the light absorption and photocarrier lifetime of monolayer semiconductors, here, we report 3D/2D perovskite/TMD type II heterostructures by coupling solution processed highly smooth and ligand free CsPbBr3 film with MoS2 and WS2 monolayers. By time-resolved spectroscopy, we show interfacial hole transfer from MoS2 (WS2) to the perovskite layer occurs in an ultrafast time scale (100 and 350 fs) and interfacial electron transfer from ultrathin CsPbBr3 to MoS2 (WS2) in ∼3 (9) ps, forming a long-lived charge separation with a lifetime of >20 ns. With increasing CsPbBr3 thickness, the electron transfer rate from CsPbBr3 to TMD is slower, but the efficiency remains to be near-unity due to coupled long-range diffusion and ultrafast interfacial electron transfer. This study indicates that coupling solution processed lead halide perovskites with strong light absorption and long carrier diffusion length to monolayer semiconductors to form a type II heterostructure is a promising strategy to simultaneously enhance the light harvesting capability and photocarrier lifetime of monolayer semiconductors.

Spin-Valley Depolarization in van der Waals Heterostructures

The appearance of van der Waals heterostructures offers a new solution to valleytronics. Here, we observe the spin-valley depolarization process of electrons and holes in type-II MoS₂-WSe₂ heterostructures simultaneously for the first time by valley-resolved broad-band femtosecond pump-probe experiments. The different depolarization paths between electrons and holes make them have different spin-valley polarization lifetimes. The spin-valley depolarization pathway of holes is mainly dominated by a phonon-assisted intervalley scattering process, while intra- and intervalley coupling can trigger additional depolarization pathways for electrons. The hole polarization lifetime can be further prolonged to more than three times in trilayer heterostructure 2MoS₂-WSe₂. For MoS₂-WS₂ that has strong orbital hybridization of Mo and W atoms, both electrons and holes lose the spin-valley polarization extremely soon after charge separation, behaving similarly to intraexcitons in a monolayer. Our work advances the basic understanding of spin-valley depolarization of van der Waals heterostructures and facilitates the effort toward longer lifetime valleytronic devices for information transfer and storage applications.

Imaging dynamic exciton interactions and coupling in transition metal dichalcogenides

Transition metal dichalcogenides (TMDs) are regarded as a possible material platform for quantum information science and related device applications. In TMD monolayers, the dephasing time and inhomogeneity are crucial parameters for any quantum information application. In TMD heterostructures, coupling strength and interlayer exciton lifetimes are also parameters of interest. However, many demonstrations in TMDs can only be realized at specific spots on the sample, presenting a challenge to the scalability of these applications. Here, using multi-dimensional coherent imaging spectroscopy, we shed light on the underlying physics—including dephasing, inhomogeneity, and strain—for a MoSe2 monolayer and identify both promising and unfavorable areas for quantum information applications. We, furthermore, apply the same technique to a MoSe2/WSe2 heterostructure. Despite the notable presence of strain and dielectric environment changes, coherent and incoherent coupling and interlayer exciton lifetimes are mostly robust across the sample. This uniformity is despite a significantly inhomogeneous interlayer exciton photoluminescence distribution that suggests a bad sample for device applications. This robustness strengthens the case for TMDs as a next-generation material platform in quantum information science and beyond.

Spatiotemporally Coupled Electron-Hole Dynamics in Two Dimensional Heterostructures

Coulomb interactions play a crucial role in low-dimensional semiconductor materials, e.g., 2D layered semiconductors, dictating their electronic and optical properties. However, fundamental questions remain as to whether and how Coulomb interactions affect the charge or energy flow in 2D heterostructures, which is essential for their light-electricity conversions. Herein, using ultrafast spectroscopy, we report real space coupled electron-hole dynamics in 2D heterostructures. We show in (WSe₂/)WS₂/MoTe₂ with a controlled energy gradient for the hole and a near flat band for electron transfer, the fate of the electron is controlled by the hole in coupled dynamics. The interfacial electron transfer from WS₂ to MoTe₂ follows the hole closely and can be facilitated or suppressed by dynamic Coulomb interaction. In parallel to the band alignment, this study reveals the critical role of Coulomb interactions on the fate of photogenerated charges in 2D heterostructures, providing experimental evidence for coupled electron-hole dynamics and a new knob for steering nanoscale charge or energy transfer process.

Imaging of Defect-Accelerated Energy Transfer in MoS2/hBN/WS2 Heterostructures

Engineering energy transfer (ET) plays an important role in the exploration of novel optoelectronic devices. The efficient ET has been reasonably regulated using different strategies, such as dielectric properties, distance, and stacking angle. However, these strategies show limited degrees of freedom in regulation. Defects can provide more degrees of freedom, such as the type and density of defects. Herein, atomic-scale defect-accelerated ET is directly observed in MoS₂/hBN/WS₂ heterostructures by fluorescence lifetime imaging microscopy. Sulfur vacancies with different densities are introduced by controlling the oxygen plasma irradiation time. Our study shows that the ET rate can be increased from 1.25 to 6.58 ns^-1 by accurately controlling the defect density. Also, the corresponding ET time is shortened from 0.80 to 0.15 ns, attributing to the participation of more neutral excitons in the ET process. These neutral excitons are transformed from trion excitons in MoS₂, assisted by oxygen substitution at sulfur vacancies. Our insights not only help us better understand the role of defects in the ET process but also provide a new approach to engineer ET for further exploration of novel optoelectronic devices in van der Waals heterostructures.

Layer-Tunable Nonlinear Optical Characteristics and Photocarrier Dynamics of 2D PdSe2 in Broadband Spectra

Layered 2D transition metal dichalcogenides (TMDCs) exhibited fascinating nonlinear optical (NLO) properties for constructing varied promising optoelectronics. However, exploring the desired 2D materials with both superior nonlinear absorption and ultrafast response in broadband spectra remain the key challenges to harvest their greatest potential. Here, based on synthesizing 2D PdSe₂ films with the controlled layer number, the authors systematically demonstrated the broadband giant NLO performance and ultrafast excited carrier dynamics of this emerging material under femtosecond visible-to-near-infrared laser-pulse excitation (400-1550 nm). Layer-dependent and wavelength-dependent evolution of optical bandgap, nonlinear absorption, and photocarrier dynamics in the obtained 2D PdSe₂ are clearly revealed. Specially, the transition from semiconducting to semimetallic PdSe₂ induced dramatic changes of their interband absorption-relaxation process. This work makes 2D PdSe₂ more competitive for future ultrafast photonics and also opens up a new avenue for the optical performance optimization of various 2D materials by rational design of these materials.

Controlling Photocarrier Lifetime in Graphene for Enhanced Photocurrent Generation via Cascade Hot Electron Transfer

Because of its broad absorption and high carrier mobility, graphene has been regarded as a promising photoactive material for optoelectronics. However, its ultrashort photoexcited carrier lifetime greatly restricts the device performance. Herein, we show that by constructing a graphene/WS₂/MoS₂ vertical heterostructure with a cascade electron-transfer pathway, the hot electrons in graphene under low-energy photoexcitation can efficiently transfer through WS₂ to MoS₂ in 180 fs, thus effectively photogating the graphene layer. Because of the spatial separation and energy barrier imposed by the WS₂ intermediate layer which retards back electron transfer, the photocarrier lifetime in graphene is significantly prolonged to ∼382.7 ps, more than 2 orders of magnitude longer than in isolated graphene and graphene/WS₂ binary heterostructure. The prolonged photocarrier lifetime in graphene leads to dramatically enhanced photocurrent generation and photoresponsivity. This study offers an exciting approach to control photocarrier lifetime in graphene for hot carrier devices with simultaneous broadband and high responsivity.

Ultrafast Charge-Transfer Dynamics in Twisted MoS2/WSe2 Heterostructures

Two-dimensional transition metal dichalcogenides offer a fascinating platform for creating van der Waals heterojunctions with exciting physical properties. Because of their typical type-II band alignment, photoexcited electrons and holes can separate via interfacial charge transfer. Furthermore, the relative crystallographic alignment of the individual layers in these heterostructures represents an important degree of freedom. Based on both effects, various fascinating ideas for applications in optoelectronics and valleytronics have been suggested. Despite its utmost importance for the design and efficiency of potential devices, the nature and the dynamics of ultrafast charge transfer are not yet well understood. This is mainly because the charge transfer can be surprisingly fast, usually faster than the temporal resolution of previous experimental approaches. Here, we apply time- and polarization-resolved second-harmonic imaging microscopy to investigate the charge-transfer dynamics for three MoS₂/WSe₂ heterostructures with different stacking angles at a previously unattainable time resolution of ≈10 fs. For 1.70 eV excitation energy, electron transfer from WSe₂ to MoS₂ is found to depend considerably on the stacking angle with the fastest transfer time observed to be as short as 12 fs. At 1.85 eV excitation energy, ultrafast hole transfer from MoS₂ to hybridized states at the Γ-point and to the K-points of WSe₂ has to be considered. Surprisingly, the corresponding decay dynamics show only a minor stacking-angle dependence indicating that radiative recombination of momentum-space indirect Γ-K excitons becomes the dominant decay route for all samples.

Near-Unity-Efficiency Energy Transfer from Perovskite to Monolayer Semiconductor through Long-Range Migration and Asymmetric Interfacial Transfer

van der Waals heterostructures combining perovskites of strong light absorption with atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) hold great potential for light-harvesting and optoelectronic applications. However, current research studies integrating TMDs with low-dimensional perovskite nanomaterials generally suffer from poor carrier/energy transport and harnessing, stemming from poor interfacial interaction due to the nanostructured nature and ligands on surface/interface. To overcome the limitations, here, we report prototypical three-dimensional (3D)/2D perovskite/TMD heterostructures by combing highly smooth and ligand-free CsPbBr₃ film with a WSe₂ monolayer. We show that the energy transfer at interface occurs through asymmetric two-step charge-transfer process, with ultrafast hole transfer in ∼200 fs and subsequent electron transfer in ∼10 ps, driven by the asymmetric type I band alignment. The energy migration and transfer from CsPbBr₃ film to WSe₂ can be well described by a one-dimensional diffusion model with a carrier diffusion length of ∼500 nm in CsPbBr₃ film. Thanks to the long-range carrier migration and ultrafast interfacial transfer, highly efficient (>90%) energy transfer to WSe₂ can be achieved with CsPbBr₃ film as thick as ∼180 nm, which can capture most of the light above its band gap. The efficient light and energy harvesting in perovskite/TMD 3D/2D heterostructures suggest great promise in optoelectronic and photonic devices.

Observation of robust charge transfer under strain engineering in two-dimensional MoS2-WSe2 heterostructures

Strain is one of the effective ways to modulate the band structure of monolayer transition metal dichalcogenides (TMDCs), which has been reported in theoretical and steady-state spectroscopic studies. However, the strain effects on the charge transfer processes in TMDC heterostructures have not been experimentally addressed thus far. Here, we systematically investigate the strain-mediated transient spectral evolutions corresponding to excitons at band-edge and higher energy states for monolayer MoS₂ and monolayer WSe₂. It is demonstrated that Γ and K valleys in monolayer WSe₂ and monolayer MoS₂ present different strain responses, according to the broadband femtosecond pump-probe experimental results. It is further observed that the resulting band offset changes tuned by applied tensile strains in MoS₂-WSe₂ heterostructures would not affect the band-edge electron transfer profiles, where only monolayer WSe₂ is excited. From a flexible optoelectronic applications perspective, the robust charge transfer under strain engineering in TMDC heterostructures is very advantageous.

Deciphering asymmetric charge transfer at transition metal dichalcogenide-graphene interface by helicity-resolved ultrafast spectroscopy

Transition metal dichalcogenide (TMD)/graphene (Gr) heterostructures constitute a key component for two-dimensional devices. The operation of TMD/Gr devices relies on interfacial charge/energy transfer processes, which remains unclear and challenging to unravel. Fortunately, the coupled spin and valley index in TMDs adds a new degree of freedom to the charges and, thus, another dimension to spectroscopy. Here, by helicity-resolved ultrafast spectroscopy, we find that photoexcitation in TMDs transfers to graphene by asynchronous charge transfer, with one type of charge transferring in the order of femtoseconds and the other in picoseconds. The rate correlates well with energy offset between TMD and graphene, regardless of compositions and charge species. Spin-polarized hole injection or long-lived polarized hole can be achieved with deliberately designed heterostructures. This study shows helicity-resolved ultrafast spectroscopy as a powerful and facile approach to reveal the fundamental and complex charge/spin dynamics in TMD-based heterostructures, paving the way toward valleytronic and optoelectronic applications.

Sub-10 fs Intervalley Exciton Coupling in Monolayer MoS2 Revealed by Helicity-Resolved Two-Dimensional Electronic Spectroscopy

The valley pseudospin at the K and K' high-symmetry points in monolayer transition metal dichalcogenides (TMDs) has potential as an optically addressable degree of freedom in next-generation optoelectronics. However, intervalley scattering and relaxation of charge carriers leads to valley depolarization and limits practical applications. In addition, enhanced Coulomb interactions lead to pronounced excitonic effects that dominate the optical response and initial valley depolarization dynamics but complicate the interpretation of ultrafast spectroscopic experiments at short time delays. Employing broadband helicity-resolved two-dimensional electronic spectroscopy (2DES), we observe ultrafast (∼10 fs) intervalley coupling between all A and B valley exciton states that results in a complete breakdown of the valley index in large-area monolayer MoS₂ films. These couplings and subsequent dynamics exhibit minimal excitation fluence or temperature dependence and are robust toward changes in sample grain size and inherent strain. Our observations strongly suggest that this direct intervalley coupling on the time scale of optical excitation is an inherent property of large-area MoS₂ distinct from dynamic carrier or exciton scattering, phonon-driven processes, and multiexciton effects. This ultrafast intervalley coupling poses a fundamental challenge for exciton-based valleytronics in monolayer TMDs and must be overcome to fully realize large-area valleytronic devices.

Ultrafast Electron Transfer with Long-Lived Charge Separation and Spin Polarization in WSe2/C60 Heterojunction

The strong excitonic effect in monolayer transition-metal dichalcogenides (TMDs) endows them with intriguing optoelectronic properties but also short-lived population and valley polarization. Exciton dissociation by interfacial charge transfer has been shown as an effective approach to prolonging excited-state lifetimes. Herein, by ultrafast spectroscopy and building-block molecule C₆₀, we investigated exciton and valley polarization dynamics in the prototypical WSe₂/C₆₀ inorganic-organic hybrid. We show that excitons in WSe₂ can be dissociated through ultrafast (∼1 ps) electron transfer to C₆₀, with nanosecond charge separation due to thermally activated electron diffusion in C₆₀ film. Because of suppressed electron-hole exchange interaction after electron transfer, hole in WSe₂ exhibits a spin/valley polarization lifetime of ∼60 ps at room temperature, more than 2 orders of magnitude longer than that in WSe₂ monolayer. This study suggests exciton dissociation as a general approach to suppress electron-hole interaction and prolong the charge/spin/valley lifetime in TMDs.

Interlayer exciton formation, relaxation, and transport in TMD van der Waals heterostructures

Van der Waals (vdW) heterostructures based on transition metal dichalcogenides (TMDs) generally possess a type-II band alignment that facilitates the formation of interlayer excitons between constituent monolayers. Manipulation of the interlayer excitons in TMD vdW heterostructures holds great promise for the development of excitonic integrated circuits that serve as the counterpart of electronic integrated circuits, which allows the photons and excitons to transform into each other and thus bridges optical communication and signal processing at the integrated circuit. As a consequence, numerous studies have been carried out to obtain deep insight into the physical properties of interlayer excitons, including revealing their ultrafast formation, long population recombination lifetimes, and intriguing spin-valley dynamics. These outstanding properties ensure interlayer excitons with good transport characteristics, and may pave the way for their potential applications in efficient excitonic devices based on TMD vdW heterostructures. At present, a systematic and comprehensive overview of interlayer exciton formation, relaxation, transport, and potential applications is still lacking. In this review, we give a comprehensive description and discussion of these frontier topics for interlayer excitons in TMD vdW heterostructures to provide valuable guidance for researchers in this field.

Transient Optical Modulation of Two-Dimensional Materials by Excitons at Ultimate Proximity

Controlling the optical response of two-dimensional (2D) layered materials is critical for their optoelectronic and photonic applications. Current transient optical modulation of 2D semiconductors is mainly based on the band filling effect, which requires internal exciton/charge occupation from photoexcitation or charge injection. However, 2D atomically thin layers exhibit a strong excitonic effect and environmental sensitivity, offering exciting opportunities to engineer their optical properties through an external dielectric or electronic environment. Here, using femtosecond transient absorption spectroscopy as a tool and transition-metal dichalcogenide (TMD) van der Waals heterostructures with type I band alignment, we show the transient absorption modulation of the TMD layer by excitons at ultimate proximity without direct photoexcitation or exciton/charge occupation. Further layer-dependent study indicates the presence of excitons reduces the exciton oscillator strength in adjacent layers through the electric field effect because of environmental sensitivity and proximity of 2D materials. This result demonstrates the transient optical modulation with decoupled light absorption and modulation components and suggests an alternative approach to control the optical response of 2D materials for optoelectronic and photonic applications.

Time-Resolved Observation of Hole Tunneling in van der Waals Multilayer Heterostructures

We reported a time-resolved study of quantum-mechanical tunneling of holes between two MoSe₂ monolayers that are separated by a monolayer WS₂ energy barrier. Four-layer heterostructures of MoSe₂/WS₂/MoSe₂/graphene, as well as control samples, were fabricated by mechanical exfoliation and dry transfer techniques. To time-resolve the hole tunneling process, an ultrashort laser pulse was used to excite electrons and holes in both MoSe₂ layers. By utilization of the graphene layer to eliminate carriers in the third MoSe₂ layer, the first MoSe₂ layer is selectively populated with the holes, which then tunnel to the third MoSe₂ layer. By monitoring decay of the hole population with an ultrashort probe pulse, we measure a hole tunneling time of about 20 ps, which is found to slightly increase with the injected carrier density. Besides the fundamental interests of real-time observation of the quantum-mechanical tunneling effect across a nanometer barrier, these results provide quantitative understanding on tunneling mechanisms of charge transfer in van der Waals heterostructures, which is useful for designing sophisticated van der Waals multilayer heterostructures.

Emerging field of few-layered intercalated 2D materials

The chemistry and physics of intercalated layered 2D materials (2DMs) are the focus of this review article. Special attention is given to intercalated bilayer and few-layer systems. Thereby, intercalated few-layers of graphene and transition metal dichalcogenides play the major role; however, also other intercalated 2DMs develop fascinating properties with thinning down. Here, we briefly introduce the historical background of intercalation and explain concepts, which become relevent with intercalating few-layers. Then, we describe various synthetic methods to yield intercalated 2DMs and focus next on current research directions, which are superconductivity, band gap tuning, magnetism, optical properties, energy storage and chemical reactions. We focus on major breakthroughs in all introduced sections and give an outlook to this emerging field of research.

Controllable Magnetic Proximity Effect and Charge Transfer in 2D Semiconductor and Double-Layered Perovskite Manganese Oxide van der Waals Heterostructure

Optically generated excitonic states (excitons and trions) in transition metal dichalcogenides are highly sensitive to the electronic and magnetic properties of the materials underneath. Modulation and control of the excitonic states in a novel van der Waals (vdW) heterostructure of monolayer MoSe₂ on double-layered perovskite Mn oxide ((La_0.8 Nd_0.2 )_1.2 Sr_1.8 Mn₂ O₇ ) is demonstrated, wherein the Mn oxide transforms from a paramagnetic insulator to a ferromagnetic metal. A discontinuous change in the exciton photoluminescence intensity via dielectric screening is observed. Further, a relatively high trion intensity is discovered due to the charge transfer from metallic Mn oxide under the Curie temperature. Moreover, the vdW heterostructures with an ultrathin h-BN spacer layer demonstrate enhanced valley splitting and polarization of excitonic states due to the proximity effect of the ferromagnetic spins of Mn oxide. The controllable h-BN thickness in vdW heterostructures reveals a several-nanometer-long scale of charge transfer as well as a magnetic proximity effect. The vdW heterostructure allows modulation and control of the excitonic states via dielectric screening, charge carriers, and magnetic spins.

Layer-Dependent Electron Transfer and Recombination Processes in MoS2/WSe2 Multilayer Heterostructures

Understanding and controlling the charge transfer processes of two-dimensional (2D) materials are fundamental for the optimized device performance based on 2D semiconductors and heterostructures. The charge transfer rate is very robust in transition metal disulfide (TMD) heterostructures with type II band alignments, which can be manipulated by intercalating a dielectric layer like hBN to isolate the donor and acceptor monolayers. This study shows that there is an alternative way to change the electron transfer and recombination rates in the case of nLMoS₂/mLWSe₂ multilayer heterostructures, where the donor-acceptor distance is maintained, but the rate of electron transfer is strongly layer dependent and shows asymmetry for the layer number of donor and acceptor monolayers. Especially, the 1LMoS₂/2LWSe₂ heterostructure slows electron transfer and charge recombination rates ∼2.3 and ∼12 times that of the 1LMoS₂/1LWSe₂ heterostructure, respectively, which have been competitive with that in the 1LMoS₂/hBN/1LWSe₂ heterostructure. From an application perspective, the noninterfacial electron transfer in which photogenerated electrons should across more than one atomically thin layer is not favorable due to the built-in electric field established by the initial interfacial electron transfer.

Efficient hot-electron extraction in two-dimensional semiconductor heterostructures by ultrafast resonant transfer

Energy loss from hot-carrier cooling sets the thermodynamic limit for the photon-to-power conversion efficiency in optoelectronic applications. Efficient hot-electron extraction before cooling could reduce the energy loss and leads to efficient next generation devices, which, unfortunately, is challenging to achieve in conventional semiconductors. In this work, we explore hot-electron transfer in two-dimensional (2D) layered semiconductor heterostructures, which have shown great potential for exploring new physics and optoelectronic applications. Using broadband micro-area ultrafast spectroscopy, we firmly established a type I band alignment in the WS₂-MoTe₂ heterostructure and ultrafast (∼60 fs) hot-electron transfer from photoexcited MoTe₂ to WS₂. The hot-electron transfer efficiency increases with excitation energy or excess energy as a result of a more favorable continuous competition between resonant electron transfer and cooling, reaching 90% for hot electrons with 0.3 eV excess energy. This study reveals exciting opportunities of designing extremely thin absorber and hot-carrier devices using 2D semiconductors and also sheds important light on the photoinduced interfacial process including charge transfer and generation in 2D heterostructures and optoelectronic devices.