Ultrafast and Sensitive Self-Powered Photodetector Featuring Self-Limited Depletion Region and Fully Depleted Channel with van der Waals Contacts

Electrically Tunable Multiple-Effects Synergistic and Boosted Photoelectric Performance in Te/WSe2 Mixed-Dimensional Heterojunction Phototransistors

Mix-dimensional heterojunctions (MDHJs) photodetectors (PDs) built from bulk and 2D materials are the research focus to develop hetero-integrated and multifunctional optoelectronic sensor systems. However, it is still an open issue for achieving multiple effects synergistic characteristics to boost sensitivity and enrich the prospect in artificial bionic systems. Herein, electrically tunable Te/WSe2 MDHJs phototransistors are constructed, and an ultralow dark current below 0.1 pA and a large on/off rectification ratio of 106 is achieved. Photoconductive, photovoltaic, and photo-thermoelectric conversions are simultaneously demonstrated by tuning the gate and bias. By these synergistic effects, responsivity and detectivity respectively reach 13.9 A W-1 and 1.37 × 1012 Jones with 400 times increment. The Te/WSe2 MDHJs PDs can function as artificial bionic visual systems due to the comparable response time to those of the human visual system and the presence of transient positive and negative response signals. This work offers an available strategy for intelligent optoelectronic devices with hetero-integration and multifunctions.

Tunable Negative and Positive Photoconductance in Van Der Waals Heterostructure for Image Preprocessing

The processing of visual information occurs mainly in the retina, and the retinal preprocessing function greatly improves the transmission quality and efficiency of visual information. The artificial retina system provides a promising path to efficient image processing. Here, graphene/InSe/h-BN heterogeneous structure is proposed, which exhibits negative and positive photoconductance (NPC and PPC) effects by altering the strength of a single wavelength laser. Moreover, a modified theoretical model is presented based on the power-dependent photoconductivity effect of laser:I ph = - mP α 1 + nP α 2 ${\rm I}_{\rm ph}\,=\,-{\rm mP}^{\alpha _{1}} + {\rm nP}^{\alpha _{2}}$ , which can reveal the internal physical mechanism of negative/positive photoconductance effects. The present 2D structure design allows the field effect transistor (FET) to exhibit excellent photoelectric performance (RNPC = 1.1× 104 AW-1, RPPC = 13 AW-1) and performance stability. Especially, the retinal pretreatment process is successfully simulated based on the negative and positive photoconductive effects. Moreover, the pulse signal input improves the device responsivity by 167%, and the transmission quality and efficiency of the visual signal can also be enhanced. This work provides a new design idea and direction for the construction of artificial vision, and lay a foundation for the integration of the next generation of optoelectronic devices.

High-Performance Self-Powered Quantum Dot Infrared Photodetector with Azide Ion Solution Treated Electron Transport Layer

The demand for self-powered photodetectors (PDs) capable of NIR detection without external power is growing with the advancement of NIR technologies such as LIDAR and object recognition. Lead sulfide quantum dot-based photodetectors (PbS QPDs) excel in NIR detection; however, their self-powered operation is hindered by carrier traps induced by surface defects and unfavorable band alignment in the zinc oxide nanoparticle (ZnO NP) electron-transport layer (ETL). In this study, an effective azide-ion (N3 -) treatment is introduced on a ZnO NP ETL to reduce the number of traps and improve the band alignment in a PbS QPD. The ZnO NP ETL treated with azide ions exhibited notable improvements in carrier lifetime and mobility as well as an enhanced internal electric field within the thin-film heterojunction of the ZnO NPs and PbS QDs. The azide-ion-treated PbS QPD demonstrated a increase in short-circuit current density upon NIR illumination, marking a responsivity of 0.45 A W-1, specific detectivity of 4 × 1011 Jones at 950 nm, response time of 8.2 µs, and linear dynamic range of 112 dB.

Ultrasensitive Near-Infrared Polarization Photodetectors with Violet Phosphorus/InSe van der Waals Heterostructures

Near-infrared (NIR) polarization photodetectors with two-dimensional (2D) semiconductors and their van der Waals (vdW) heterostructures have presented great impact for the development of a wide range of technologies, such as in the optoelectronics and communication fields. Nevertheless, the lack of a photogenerated charge carrier at the device's interface leads to a poor charge carrier collection efficiency and a low linear dichroism ratio, hindering the achievement of high-performance optoelectronic devices with multifunctionalities. Herein, we present a type-II violet phosphorus (VP)/InSe vdW heterostructure that is predicted via density functional theory calculation and confirmed by Kelvin probe force microscopy. Benefiting from the type-II band alignment, the VP/InSe vdW heterostructure-based photodetector achieves excellent photodetection performance such as a responsivity (R) of 182.8 A/W, a detectivity (D*) of 7.86 × 1012 Jones, and an external quantum efficiency (EQE) of 11,939% under a 1064 nm photon excitation. Furthermore, the photodetection performance can be enhanced by manipulating the device geometry by inserting a few layers of graphene between the VP and InSe (VP/Gr/InSe). Remarkably, the VP/Gr/InSe vdW heterostructure shows a competitive polarization sensitivity of 2.59 at 1064 nm and can be integrated as an image sensor. This work demonstrates that VP/InSe and VP/Gr/InSe vdW heterostructures will be effective for promising integrated NIR optoelectronics.

Ideal Photodetector Based on WS2/CuInP2S6 Heterostructure by Combining Band Engineering and Ferroelectric Modulation

Two-dimensional van der Waals (2D vdW) heterostructure photodetectors have garnered significant attention for their potential applications in next-generation optoelectronic systems. However, current 2D vdW photodetectors inevitably encounter compromises between responsivity, detectivity, and response time due to the absence of multilevel regulation for free and photoexcited carriers, thereby restricting their widespread applications. To address this challenge, we propose an efficient 2D WS2/CuInP2S6 vdW heterostructure photodetector by combining band engineering and ferroelectric modulation. In this device, the asymmetric conduction and valence band offsets effectively block the majority carriers (free electrons), while photoexcited holes are efficiently tunneled and rapidly collected by the bottom electrode. Additionally, the ferroelectric CuInP2S6 layer generates polarization states that reconfigure the built-in electric field, reducing dark current and facilitating the separation of photocarriers. Moreover, photoelectrons are trapped during long-distance lateral transport, resulting in a high photoconductivity gain. Consequently, the device achieves an impressive responsivity of 88 A W-1, an outstanding specific detectivity of 3.4 × 1013 Jones, and a fast response time of 37.6/371.3 μs. Moreover, the capability of high-resolution imaging under various wavelengths and fast optical communication has been successfully demonstrated using this device, highlighting its promising application prospects in future optoelectronic systems.

High-Performance Photoinduced Tunneling Self-Driven Photodetector for Polarized Imaging and Polarization-Coded Optical Communication based on Broken-Gap ReSe2 /SnSe2 van der Waals Heterojunction

Novel 2D materials with low-symmetry structures exhibit great potential applications in developing monolithic polarization-sensitive photodetectors with small volume. However, owing to the fact that at least half of them presented a small anisotropic factor of ≈2, comprehensive performance of present polarization-sensitive photodetectors based on 2D materials is still lower than the practical application requirements. Herein, a self-driven photodetector with high polarization sensitivity using a broken-gap ReSe2 /SnSe2 van der Waals heterojunction (vdWH) is demonstrated. Anisotropic ratio of the photocurrent (Imax /Imin ) could reach 12.26 (635 nm, 179 mW cm-2 ). Furthermore, after a facile combination of the ReSe2 /SnSe2 device with multilayer graphene (MLG), Imax /Imin of the MLG/ReSe2 /SnSe2 can be further increased up to13.27, which is 4 times more than that of pristine ReSe2 photodetector (3.1) and other 2D material photodetectors even at a bias voltage. Additionally, benefitting from the synergistic effect of unilateral depletion and photoinduced tunneling mechanism, the MLG/ReSe2 /SnSe2 device exhibits a fast response speed (752/928 µs) and an ultrahigh light on/off ratio (105 ). More importantly, MLG/ReSe2 /SnSe2 device exhibits excellent potential applications in polarized imaging and polarization-coded optical communication with quaternary logic state without any power supply. This work provides a novel feasible avenue for constructing next-generation smart polarization-sensitive photodetector with low energy consumption.

Air-stable self-powered photodetector based on TaSe2/WS2/TaSe2 asymmetric heterojunction with surface self-passivation

Two-dimensional (2D) transition metal dichalcogenides are highly suitable for constructing junction photodetectors because of their suspended bond-free surface and adjustable bandgap. Additional stable layers are often used to ensure the stability of photodetectors. Unfortunately, they often increase the complexity of preparation and cause performance degradation of devices. Considering the self-passivation behavior of TaSe2, we designed and fabricated a novel self-powered TaSe2/WS2/TaSe2 asymmetric heterojunction photodetector. The heterojunction photodetector shows excellent photoelectric performance and photovoltaic characteristics, achieving a high responsivity of 292 mA/W, an excellent specific detectivity of 2.43 × 1011 Jones, a considerable external quantum efficiency of 57 %, a large optical switching ratio of 2.6 × 105, a fast rise/decay time of 43/54 μs, a high open-circuit voltage of 0.23 V, and a short-circuit current of 2.28 nA under 633 nm laser irradiation at zero bias. Moreover, the device also shows a favorable optical response to 488 and 532 nm lasers. Notably, it exhibits excellent environmental long-term stability with the performance only decreasing ∼ 5.6 % after exposed to air for 3 months. This study provides a strategy for the development of air-stable self-powered photodetectors based on 2D materials.

Tunable Contacts of Bi2 O2 Se Nanosheets MSM Photodetectors by Metal-Assisted Transfer Approach for Self-Powered Near-Infrared Photodetection

Owing to the Fermi pinning effect arose in the metal electrodes deposition process, metal-semiconductor contact is always independent on the work function, which challenges the next-generation optoelectronic devices. In this work, a metal-assisted transfer approach is developed to transfer Bi2 O2 Se nanosheets onto the pre-deposited metal electrodes, benefiting to the tunable metal-semiconductor contact. The success in Bi2 O2 Se nanosheets transfer is contributed to the stronger van der Waals adhesion of metal electrodes than that of growth substrates. With the pre-deposited asymmetric electrodes, the self-powered near-infrared photodetectors are realized, demonstrating low dark current of 0.04 pA, high Ilight /Idark ratio of 380, fast rise and decay times of 4 and 6 ms, respectively, under the illumination of 1310 nm laser. By pre-depositing the metal electrodes on polyimide and glass, high-performance flexible and omnidirectional self-powered near-infrared photodetectors are achieved successfully. This study opens up new opportunities for low-dimensional semiconductors in next-generation high-performance optoelectronic devices.

In Situ Defect Engineering of Controllable Carrier Types in WSe2 for Homomaterial Inverters and Self-Powered Photodetectors

WSe2 has a high mobility of electrons and holes, which is an ideal choice as active channels of electronics in extensive fields. However, carrier-type tunability of WSe2 still has enormous challenges, which are essential to overcome for practical applications. In this work, the direct growth of n-doped few-layer WSe2 is realized via in situ defect engineering. The n-doping of WSe2 is attributed to Se vacancies induced by the H2 flow purged in the cooling process. The electrical measurements based on field effect transistors demonstrate that the carrier type of WSe2 synthesized is successfully transferred from the conventional p-type to the rarely reported n-type. The electron carrier concentration is efficiently modulated by the concentration of H2 during the cooling process. Furthermore, homomaterial inverters and self-powered photodetectors are fabricated based on the doping-type-tunable WSe2. This work reveals a significant way to realize the controllable carrier type of two-dimensional (2D) materials, exhibiting great potential in future 2D electronics engineering.

High-Performance Self-Powered WSe2/ReS2 Photodetector Enabled via Surface Charge Transfer Doping

Two-dimensional (2D) van der Waals heterostructures based on various 2D transition metal dichalcogenides are widely used in photodetection applications. However, their response time and photoresponsivity are limited, posing a challenge for their applications in high-sensitivity photodetection. Surface charge transfer doping (SCTD) has emerged as a novel doping approach for low-dimensional materials with high specific surface area and attracted considerable attention, as it is simple and effective, does not damage the lattice, and considers various types of dopants. Herein, we prepare p-i-n junction-based photodetectors via the SCTD of WSe2/ReS2 heterojunctions using p-type dopant F4-TCNQ molecules, where doped WSe2 serves as a p-type semiconductor, undoped WSe2 acts as an intrinsic layer, and ReS2 functions as an n-type semiconductor. The surface-charge-transfer-doped WSe2/ReS2 heterojunction leads to a reduction in the Schottky barrier and an increase in the built-in electric field compared with the as-fabricated heterojunction. In the photovoltaic mode and under 785 nm laser illumination, the photodiode exhibits an increase in responsivity from 0.08 to 0.29 A/W, specific detectivity from 1.89 × 1012 to 8.02 × 1012 Jones, and the external quantum efficiency from 12.67 to 46.29%. Additionally, the p-i-n structure expands the depletion region width, resulting in a photovoltaic response time of 7.56/6.48 μs and a -3 dB cutoff frequency of over 85 kHz, an order of magnitude faster than the pristine response time. Herein, we derive an effective and simple scheme for designing high-performance, low-power optoelectronic devices based on 2D van der Waals heterostructures.

Photoelectric performance of InSe vdW semi-floating gate p-n junction transistor

Semi-floating gate transistors based on vdW materials are often used in memory and programmable logic applications. In this paper, we propose a semi-floating gate photoelectric p-n junction transistor structure which is stacked by InSe/h-BN/Gr. By modulating gate voltage, InSe can be presented as N-type and P-type respectively on different substrates, and then combined into p-n junction. Moreover, InSe/h-BN/Gr device can be switched freely between N-type resistance and p-n junction. The resistance value of InSe resistor and the photoelectric properties of the p-n junction are also sensitively modulated by laser. Under dark conditions, the rectification ratio of p-n junction can be as high as 107. After laser modulation, the device has a response up to 1.154 × 104A W-1, a detection rate up to 5.238 × 1012Jones, an external quantum efficiency of 5.435 × 106%, and a noise equivalent power as low as 1.262 × 10-16W/Hz1/2. It lays a foundation for the development of high sensitivity and fast response rate tunable photoelectric p-n junction transistor.

Self-Driven Photo-Polarized Water Molecule-Triggered Graphene-Based Photodetector

Flowing water can be used as an energy source for generators, providing a major part of the energy for daily life. However, water is rarely used for information or electronic devices. Herein, we present the feasibility of a polarized liquid-triggered photodetector in which polarized water is sandwiched between graphene and a semiconductor. Due to the polarization and depolarization processes of water molecules driven by photogenerated carriers, a photo-sensitive current can be repeatedly produced, resulting in a high-performance photodetector. The response wavelength of the photodetector can be fine-tuned as a result of the free choice of semiconductors as there is no requirement of lattice match between graphene and the semiconductors. Under zero voltage bias, the responsivity and specific detectivity of Gr/NaCl (0.5 M)W/N-GaN reach values of 130.7 mA/W and 2.3 × 10⁹ Jones under 350 nm illumination, respectively. Meanwhile, using a polar liquid photodetector can successfully read the photoplethysmography signals to produce accurate oxygen blood saturation and heart rate. Compared with the commercial pulse oximetry sensor, the average errors of oxygen saturation and heart rate in the designed photoplethysmography sensor are ~1.9% and ~2.1%, respectively. This study reveals that water can be used as a high-performance photodetector in informative industries.

Self-Powered Photodetector with High Efficiency and Polarization Sensitivity Enabled by WSe2/Ta2NiSe5/WSe2 van der Waals Dual Heterojunction

Self-powered photodetectors have triggered widespread attention because of the requirement of Internet of Things (IoT) application and low power consumption. However, it is challenging to simultaneously implement miniaturization, high quantum efficiency, and multifunctionalization. Here, we report a high-efficiency and polarization-sensitive photodetector enabled by two-dimensional (2D) WSe₂/Ta₂NiSe₅/WSe₂ van der Waals (vdW) dual heterojunctions (DHJ) along with a sandwich-like electrode pair. On account of enhanced light collection efficiency and two opposite built-in electric fields at the hetero-interfaces, the DHJ device achieves not only a broadband spectral response of 400-1550 nm but outstanding performance under 635 nm light illumination including an ultrahigh external quantum efficiency (EQE) of 85.5%, a pronounced power conversion efficiency (PCE) of 1.9%, and a fast response speed of 420/640 μs, which is much better than that of the WSe₂/Ta₂NiSe₅ single heterojunction (SHJ). Significantly, based on the strong in-plane anisotropy of 2D Ta₂NiSe₅ nanosheets, the DHJ device shows competitive polarization sensitivities of 13.9 and 14.8 under 635 and 808 nm light, respectively. Furthermore, an excellent self-powered visible imaging capability based on the DHJ device is demonstrated. These results pave a promising platform for realizing self-powered photodetectors with high performance and multifunctionality.

Zero-Bias Photodetection in 2D Materials via Geometric Design of Contacts

Structural or crystal asymmetry is a necessary condition for the emergence of zero-bias photocurrent in light detectors. Structural asymmetry has been typically achieved via p-n doping, which is a technologically complex process. Here, we propose an alternative approach to achieve zero-bias photocurrent in two-dimensional (2D) material flakes exploiting the geometrical nonequivalence of source and drain contacts. As a prototypical example, we equip a square-shaped flake of PdSe₂ with mutually orthogonal metal leads. Upon uniform illumination with linearly polarized light, the device demonstrates nonzero photocurrent which flips its sign upon 90° polarization rotation. The origin of zero-bias photocurrent lies in a polarization-dependent lightning-rod effect. It enhances the electromagnetic field at one contact from the orthogonal pair and selectively activates the internal photoeffect at the respective metal-PdSe₂ Schottky junction. The proposed technology of contact engineering is independent of a particular light-detection mechanism and can be extended to arbitrary 2D materials.

Emerging Trends in 2D TMDs Photodetectors and Piezo-Phototronic Devices

The piezo-phototronic effect shows promise with regards to improving the performance of 2D semiconductor-based flexible optoelectronics, which will potentially open up new opportunities in the electronics field. Mechanical exfoliation and chemical vapor deposition (CVD) influence the piezo-phototronic effect on a transparent, ultrasensitive, and flexible van der Waals (vdW) heterostructure, which allows the use of intrinsic semiconductors, such as 2D transition metal dichalcogenides (TMD). The latest and most promising 2D TMD-based photodetectors and piezo-phototronic devices are discussed in this review article. As a result, it is possible to make flexible piezo-phototronic photodetectors, self-powered sensors, and higher strain tolerance wearable and implantable electronics for health monitoring and generation of piezoelectricity using just a single semiconductor or vdW heterostructures of various nanomaterials. A comparison is also made between the functionality and distinctive properties of 2D flexible electronic devices with a range of applications made from 2D TMDs materials. The current state of the research about 2D TMDs can be applied in a variety of ways in order to aid in the development of new types of nanoscale optoelectronic devices. Last, it summarizes the problems that are currently being faced, along with potential solutions and future prospects.

Photosensitive Dielectric 2D Perovskite Based Photodetector for Dual Wavelength Demultiplexing

Stacked 2D perovskites provide more possibilities for next generation photodetector with more new features. Compared with its excellent optoelectronic properties, the good dielectric performance of metal halide perovskite rarely comes into notice. Here, a bifunctional perovskite based photovoltaic detector capable of two wavelength demultiplexing is demonstrated. In the Black Phosphorus/Perovskite/MoS₂ structured photodetector, the comprehensive utilization of the photosensitive and dielectric properties of 2D perovskite allows the device to work in different modes. The device shows normal continuous photoresponse under 405 nm, while it shows a transient spike response to visible light with longer wavelengths. The linear dynamic range, rise/decay time, and self-powered responsivity under 405 nm can reach 100, 38 µs/50 µs, and 17.7 mA W^-1 , respectively. It is demonstrated that the transient spike photocurrent with long wavelength exposure is related to the illumination intensity and can coexist with normal photoresponse. Two waveband-dependent signals can be identified and used to reflect more information simultaneously. This work provides a new strategy for multispectral detection and demultiplexing, which can be used to improve data transfer rates and encrypted communications. This work mode can inspire more multispectral photodetectors with different stacked 2D materials, especially to the optoelectronic application of the wide bandgap, high dielectric photosensitive materials.

Chemical Dopant-Free Controlled MoTe2/MoSe2 Heterostructure toward a Self-Driven Photodetector and Complementary Logic Circuits

Two-dimensional (2D) van der Waals heterostructures based on transition metal dichalcogenides are expected to be unique building blocks for next-generation nanoscale electronics and optoelectronics. The ability to control the properties of 2D heterostructures is the key for practical applications. Here, we report a simple way to fabricate a high-performance self-driven photodetector based on the MoTe₂/MoSe₂ p-n heterojunction, in which the hole-dominated transport polarity of MoTe₂ is easily achieved via a straightforward thermal annealing treatment in air without any chemical dopants or special gases needed. A high photoresponsivity of 0.72 A W^-1, an external quantum efficiency up to 41.3%, a detectivity of 7 × 10¹¹ Jones, and a response speed of 120 μs are obtained at zero bias voltage. Additionally, this doping method is also utilized to realize a complementary inverter with a voltage gain of 24. By configuring 2D p-MoTe₂ and n-MoSe₂ on demand, logic functions of NAND and NOR gates are also accomplished successfully. These results present a significant potential toward future larger-scale heterogeneously integrated 2D electronics and optoelectronics.

High-Performance and Polarization-Sensitive Imaging Photodetector Based on WS2 /Te Tunneling Heterostructure

Next-generation imaging systems require photodetectors with high sensitivity, polarization sensitivity, miniaturization, and integration. By virtue of their intriguing attributes, emerging 2D materials offer innovative avenues to meet these requirements. However, the current performance of 2D photodetectors is still below the requirements for practical application owing to the severe interfacial recombination, the lack of photoconductive gain, and insufficient photocarrier collection. Here, a tunneling dominant imaging photodetector based on WS₂ /Te heterostructure is reported. This device demonstrates competitive performance, including a remarkable responsivity of 402 A W^-1 , an outstanding detectivity of 9.28 × 10¹³ Jones, a fast rise/decay time of 1.7/3.2 ms, and a high photocurrent anisotropic ratio of 2.5. These outstanding performances can be attributed to the type-I band alignment with carrier transmission barriers and photoinduced tunneling mechanism, allowing reduced interfacial trapping effect, effective photoconductive gains, and anisotropic collection of photocarriers. Significantly, the constructed photodetector is successfully integrated into a polarized light imaging system and an ultra-weak light imaging system to illustrate the imaging capability. These results suggest the promising application prospect of the device in future imaging systems.

Record-High Work-Function p-Type CuBiP2 Se6 Atomic Layers for High-Photoresponse van der Waals Vertical Heterostructure Phototransistor

The notable lack of intrinsic p-type 2D layered semiconductors has hindered the engineering of 2D devices for complementary metal oxide semiconductors (CMOSs). Herein, a novel quaternary intrinsic p-type 2D semiconductor, CuBiP₂ Se₆ atomic layers, is introduced into the 2D family. The semiconductor displays a high work function of 5.26 eV, a moderate hole mobility of 1.72 cm² V^-1 s^-1 , and an ultrahigh on/off current exceeding 10⁶ at room temperature. To date, 5.26 eV is the highest work-function recorded in p-type 2D materials, indicating the ultrastable p-type behavior of CuBiP₂ Se₆ . Additionally, a multilayer graphene/CuBiP₂ Se₆ /multilayer graphene (MLG/CBPS/MLG)-based fully vertical van der Waals heterostructure phototransistor is designed and fabricated. This device exhibits outstanding optoelectronic performance with a responsivity (R) of 4.9 × 10⁴ A W^-1 , an external quantum efficiency (EQE) of 1.5 × 10⁷ %, a detectivity (D) of 1.14 × 10¹³ Jones, and a broad working wavelength (400-1100 nm), respectively. This is comparable to state-of-the-art 2D devices. Such excellent performance is attributed to the ultrashort transmit length and nondestructive/defect-free contacts. This leads to faster response speed and eliminates Fermi-level pinning effects. Moreover, ultrahigh responsivity and detectivity endow the device with applaudable imaging sensing capability. These results make CuBiP₂ Se₆ an ideal p-type candidate material for next-generation CMOSs logic devices.

Monolayer Graphene-MoSSe van der Waals Heterostructure for Highly Responsive Gate-Tunable Near-Infrared-Sensitive Broadband Fast Photodetector

Transition metal dichalcogenides (TMDCs) are potential two-dimentional materials as natural partners of graphene for highly responsive van der Waals (vdW) heterostructure photodetectors. However, the spectral detection range of the detectors is limited by the optical bandgap of the TMDC, which acts as a light-absorbing medium. Bandgap engineering by making alloy TMDC has evolved as a suitable approach for the development of wide-band photodetectors. Here, broadband (visible to near-infrared) photodetection with high sensitivity in the near-infrared region is demonstrated in a MoSSe/graphene heterostructure. In the ambient environment, the photodetector exhibits high responsivity of 0.6 × 102 A/W and detectivity of 7.9 × 1011 Jones at 800 nm excitation with a power density of 17 fW/μm2 and 10 mV source-drain bias. The photodetector shows appreciable responsivity in self-bias mode due to nonuniform distribution of MoSSe flakes on the graphene layer between the source and drain end and the asymmetry between the two electrodes. Time-dependent photocurrent measurements show fast rise/decay times of ∼38 ms/∼48 ms. A significant gate tunability on the efficiency of the detector has been demonstrated. The device is capable of low power detection and exhibits high operational frequency, gain, and bandwidth. Thus, the MoSSe/graphene heterostructure can be a promising candidate as a high-speed and highly sensitive near-infrared photodetector capable of operating at ambient conditions with low energy consumption.

Interlayer Transition Induced Infrared Response in ReS2/2D Perovskite van der Waals Heterostructure Photodetector

The emerging Ruddlesden-Popper two-dimensional perovskite (2D PVK) has recently joined the family of 2D semiconductors as a potential competitor for building van der Waals (vdW) heterostructures in future optoelectronics. However, to date, most of the reported heterostructures based on 2D PVKs suffer from poor spectral response that is caused by intrinsic wide bandgap of constituting materials. Herein, a direct heterointerface bandgap (∼0.4 eV) between 2D PVK and ReS₂ is demonstrated. The strong interlayer coupling reduces the energy interval at the heterojunction region so that the heterostructure shows high sensitivity with the spectral response expanding to 2000 nm. The large type-II band offsets exceeding 1.1 eV ensure fast photogenerated carriers separation at the heterointerface. When this heterostructure is used as a self-driven photodetector, it exhibits a record high detectivity up to 1.8 × 10¹⁴ Jones, surpassing any reported 2D self-driven devices, and an impressive external quantum efficiency of 68%.

Carrier Recirculation Induced High-Gain Photodetector Based on van der Waals Heterojunction

Two-dimensional (2D) materials have attracted great attention in the field of photodetection due to their excellent electronic and optoelectronic properties. However, the weak optical absorption caused by atomically thin layers and the short lifetime of photocarriers limit their optoelectronic performance, especially for weak light detection. In this work, we design a high-gain photodetector induced by carrier recirculation based on a vertical InSe/GaSe heterojunction. In this architecture, the photogenerated holes are trapped in GaSe due to the built-in electric field, suppressing the recombination rate of photocarriers, so the electrons can recirculate for multiple times in the InSe channel following the generation of a single electron-hole pair, resulting a high photoconductive gain (10⁷). The responsivity and detectivity of the InSe/GaSe heterojunction can reach 1037 A/W and 8.6 × 10¹³ Jones, which are 1 order of magnitude higher than those of individual InSe. More importantly, the InSe/GaSe heterojunction can respond to weaker light (1 μW/cm²) compared to individual InSe (10 μW/cm²). Utilizing GaSe as the channel and InSe as the electrons trapped layer, the same experimental phenomenon is achieved. This work can provide an approach for designing a highly sensitive device utilizing a 2D van der Waals heterojunction, and it also possesses wide applicability for other materials.

High-Gain MoS2/Ta2NiSe5 Heterojunction Photodetectors with Charge Transfer and Suppressing Dark Current

Emerging two-dimensional narrow band gap materials with tunable band gaps and unique electrical and optical properties have shown tremendous potential in broadband photodetection. Nevertheless, large dark currents severely hinder the performance of photodetectors. Here, a MoS₂/Ta₂NiSe₅ van der Waals heterostructure device was successfully fabricated with a high rectification ratio of ∼10⁴ and an ultralow reverse bias current of the pA level. Excitingly, the charge transfer and the generation of the built-in electric field of heterostructures have been proved by theory and experiment, which effectively suppress dark currents. The dark current of the heterostructure reduces by nearly 10⁴ compared with the pure Ta₂NiSe₅ photodetector at V_ds = 1 V. The MoS₂/Ta₂NiSe₅ device exhibits excellent photoelectric performance with the maximum responsivity of 515.6 A W^-1 and 0.7 A W^-1 at the wavelengths of 532 and 1064 nm under forward bias, respectively. In addition, the specific detectivity is up to 3.1 × 10¹³ Jones (532 nm) and 2.4 × 10⁹ Jones (1064 nm). Significantly, the device presents an ultra-high gain of 6 × 10⁷ and an exceptional external quantum efficiency of 1.2 × 10⁵% under 532 nm laser irradiation. The results reveal that the MoS₂/Ta₂NiSe₅ heterostructure provides an essential platform for the development and application of high-performance broadband optoelectronic devices.

Flexible Optical Synapses Based on In2Se3/MoS2 Heterojunctions for Artificial Vision Systems in the Near-Infrared Range

Near-infrared (NIR) synaptic devices integrate NIR optical sensitivity and synaptic plasticity, emulating the basic biomimetic function of the human visual system and showing great potential in NIR artificial vision systems. However, the lack of semiconductor materials with appropriate band gaps for NIR photodetection and effective strategies for fabricating devices with synaptic behaviors limit the further development of NIR synaptic devices. Here, a two-terminal NIR synaptic device consisting of the In₂Se₃/MoS₂ heterojunction has been constructed, and it exhibits fundamental synaptic functions. The reduced band gap and potential barrier of In₂Se₃/MoS₂ heterojunctions are essential for NIR synaptic plasticity. In addition, the NIR synaptic properties of In₂Se₃/MoS₂ heterojunctions under strain have been studied systematically. The ΔEPSC of the In₂Se₃/MoS₂ synaptic device can be improved from 38.4% under no strain to 49.0% under a 0.54% strain with a 1060 nm illumination for 1 s at 100 mV. Furthermore, the artificial NIR vision system consisting of a 10 × 10 In₂Se₃/MoS₂ device array has been fabricated, exhibiting image sensing, learning, and storage functions under NIR illumination. This research provides new ideas for the design of flexible NIR synaptic devices based on 2D materials and presents many opportunities in artificial intelligence and NIR vision systems.

Te/SnS2 tunneling heterojunctions as high-performance photodetectors with superior self-powered properties

The tunneling heterojunctions made of two-dimensional (2D) materials have been explored to have many intriguing properties, such as ultrahigh rectification and on/off ratio, superior photoresponsivity, and improved photoresponse speed, showing great potential in achieving multifunctional and high-performance electronic and optoelectronic devices. Here, we report a systematic study of the tunneling heterojunctions consisting of 2D tellurium (Te) and Tin disulfide (SnS₂). The Te/SnS₂ heterojunctions possess type-II band alignment and can transfer to type-III one under reverse bias, showing a reverse rectification ratio of about 5000 and a current on/off ratio over 10⁴. The tunneling heterojunctions as photodetectors exhibit an ultrahigh photoresponsivity of 50.5 A W^-1 in the visible range, along with a dramatically enhanced photoresponse speed. Furthermore, due to the reasonable type-II band alignment and negligible band bending at the interface, Te/SnS₂ heterojunctions at zero bias exhibit excellent self-powered performance with a high responsivity of 2.21 A W^-1 and external quantum efficiency of 678%. The proposed heterostructure in this work provides a useful guideline for the rational design of a high-performance self-powered photodetector.

Solution Processed Photodetectors with PVK-WS2 Nanotube/Nanofullerene Organic-Inorganic Hybrid Films

Organic-inorganic hybrid photodetectors have attracted increased interest due to their exceptional properties, such as flexibility, transparency, and low cost for many promising applications. Low-dimensional tungsten disulfide (WS₂) nanostructures have outstanding electrical and optical properties, making them ideal candidates for ultrasensitive photodetector devices. In this paper, photodetectors were fabricated with hybrid thin films containing two different WS₂ nanomaterials, one-dimensional (1D) WS₂ nanotubes (WS₂-NTs) and a zero-dimensional (0D) WS₂ nanofullerene (WS₂-FLs) hybrid with poly(N-vinyl carbazole) (PVK). The electrical responses of the devices under visible-light illuminations were studied. The photodetector devices with 0D WS₂-FLs/PVK hybrid thin films have relatively higher sensitivity and stable voltage responses to visible light. Besides, the hybrid film shows a strong surface-enhanced Raman effect (SERS). These materials and new strategies enable the creation of a new class of processed photodetectors for practical applications.

An Internal-Electrostatic-Field-Boosted Self-Powered Ultraviolet Photodetector

Self-powered photodetectors are of significance for the development of low-energy-consumption and environment-friendly Internet of Things. The performance of semiconductor-based self-powered photodetectors is limited by the low quality of junctions. Here, a novel strategy was proposed for developing high-performance self-powered photodetectors with boosted electrostatic potential. The proposed self-powered ultraviolet (UV) photodetector consisted of an indium tin oxide and titanium dioxide (ITO/TiO₂) heterojunction and an electret film (poly tetra fluoroethylene, PTFE). The PTFE layer introduces a built-in electrostatic field to highly enhance the photovoltaic effect, and its high internal resistance greatly reduces the dark current, and thus remarkable performances were achieved. The self-powered UV photodetector with PTFE demonstrated an extremely high on-off ratio of 2.49 × 10⁵, a responsivity of 76.87 mA/W, a response rise time of 7.44 ms, and a decay time of 3.75 ms. Furthermore, the device exhibited exceptional stability from room temperature to 70 °C. Compared with the conventional ITO/TiO₂ heterojunction without the PTFE layer, the photoresponse of the detector improved by 442-fold, and the light-dark ratio was increased by 8.40 × 10⁵ times. In addition, the detector is simple, easy to fabricate, and low cost. Therefore, it can be used on a large scale. The electrostatic modulation effect is universal for various types of semiconductor junctions and is expected to inspire more innovative applications in optoelectronic and microelectronic devices.

Rational Design of WSe2 /WS2 /WSe2 Dual Junction Phototransistor Incorporating High Responsivity and Detectivity

The excellent semiconducting properties and ultrathin morphological characteristics allow van der Waals (vdW) heterostructures based on 2D materials to be promising channel materials for the next-generation optoelectronic devices, especially in photodetectors. Although various 2D heterostructure-based photodetectors have been developed, the unavoidable trade-off between responsivity and detectivity remains a critical issue for these devices. Here, an ingenious phototransistor based on WSe₂ /WS₂ /WSe₂ dual-vdW heterostructures is constructed, performing both high responsivity and detectivity. In the charge neutrality point (gate voltage of -15 V and bias voltage of 1 V), this device demonstrates a pronounced photosensitivity, accompanying with high detectivity of 1.9 × 10¹⁴  Jones, high responsivity of 35.4 A W^-1 , and fast rise/fall time of 3.2/2.5 ms at 405 nm with power density of 60 µW cm^-2 . Density functional theory calculations, energy band profiles, and optoelectronic characteristics jointly verify that the high performance is ascribed to the distinctive device design, which not only facilitates the separation of photogenerated carriers but also produces a strong photogating effect. As a feasible application, an automotive radar system is demonstrated, proving that the device has considerable potential for application in vehicle intelligent assisted driving.

MoS2/WSe2 vdW Heterostructures Decorated with PbS Quantum Dots for the Development of High-Performance Photovoltaic and Broadband Photodiodes

van der Waals heterostructures (vdWHs) overcoming the lattice and processing limitations of conventional heterostructures provide an opportunity to develop high-performance 2D vdWH solar cells and photodiodes. However, it is challenging to improve the sensitivity and response speed of 2D vdWH photovoltaic devices due to the low light absorption efficiency and electron/hole traps in heterointerfaces. Here, we design a PbS/MoS₂/WSe₂ heterostructure photodiode in which a light-sensitive PbS quantum dot (QD) layer combined with a MoS₂/WSe₂ heterostructure significantly enhances the photovoltaic response. The electron current in the heterostructure is increased by the effective collection of photogenerated electrons induced by PbS QDs. The device exhibits a broadband photovoltaic response from 405 to 1064 nm with a maximum responsivity of 0.76 A/W and a specific detectivity of 5.15 × 10¹¹ Jones. In particular, the response speed is not limited by multiple electron traps in the PbS QDs/2D material heterointerface, and a fast rising/decaying time of 43/48 μs and a -3 dB cutoff frequency of over 10 kHz are achieved. The negative differential capacitance and frequency dependence of capacitance demonstrate the presence of interface states in the MoS₂/WSe₂ heterointerface that hamper the improvement of the response speed. The scheme to enhance photovoltaic performance without sacrificing response speed provides opportunities for the development of high-performance 2D vdWH optoelectronic devices.

Realization of Ultra-Scaled MoS2 Vertical Diodes via Double-Side Electrodes Lamination

Schottky diode is the fundamental building blocks for modern electronics and optoelectronics. Reducing the semiconductor layer thickness could shrink the vertical size of a Schottky diode, improving its speed and integration density. Here, we demonstrate a new approach to fabricate a Schottky diode with ultrashort physical length approaching atomic limit. By mechanically laminating prefabricated metal electrodes on both-sides of two-dimensional MoS₂, the intrinsic metal-semiconductor interfaces can be well retained. As a result, we demonstrate the thinnest Schottky diode with a length of 2.6 nm and decent rectification behavior. Furthermore, with a diode length smaller than the semiconductor depletion length, the carrier transport mechanisms are investigated and explained by thickness-dependent and temperature-dependent electrical measurements. Our study not only pushes the scaling limit of a Schottky diode but also provides a general double-sided electrodes integration approach for other ultrathin vertical devices.

Strong In-Plane Optical and Electrical Anisotropies of Multilayered γ-InSe for High-Responsivity Polarization-Sensitive Photodetectors

Recently, identifying promising new two-dimensional (2D) materials with low-symmetry structures has aroused great interest for developing monolithic polarization-sensitive photodetectors with small volume. Here, after comprehensive research of the in-plane anisotropic structure and electronic and optoelectronic properties of layered γ-InSe, a superior responsivity polarization-sensitive photodetector based on multilayer γ-InSe is constructed by a facile method. Notably, the conductance and carrier mobility of the device along the armchair direction are 11.8 and 2.35 times larger than those along the zigzag direction, respectively. Benefitting from the high efficiency of light absorption and excellent carrier mobility (221 cm² V^-1 s^-1) of our multilayered γ-InSe along the armchair direction, the device exhibits a superior responsivity of 127 A/W and an external quantum efficiency (EQE) of 10⁴%. Especially, the highest responsivity along the armchair direction of our γ-InSe polarization-sensitive photodetectors can reach as high as 78.5 A/W under polarized light. This value is much higher than those of other devices even under unpolarized light. This work not only provides an insight into the in-plane anisotropic properties of 2D layered γ-InSe but also proposes a stable and environmentally friendly candidate for anisotropic optoelectronic applications.

High-Performance and Broadband Flexible Photodetectors Employing Multicomponent Alloyed 1D CdSxSe1-x Micro-Nanostructures

Low-cost multicomponent alloyed one-dimensional (1D) semiconductors exhibit broadband absorption from the ultraviolet to the near-infrared regime, which has attracted a great deal of interest in high-performance flexible optoelectronic devices. Here, we report the facile one-step fabrication of high-performance broadband rigid and flexible photodevices based on multicomponent alloyed 1D cadmium-sulfur-selenide (CdS_xSe_1-x) micro-nanostructures obtained via a vapor transport route. Photoresponse measurements have demonstrated their superior spectral photoresponsivity (5.8 × 10⁴ A/W), several orders of magnitude higher than the pristine CdSe nanobelt photodevice, high specific detectivity (2 × 10¹⁵ Jones), photogain (1.2 × 10⁵), external quantum efficiency (EQE, 1.4 × 10⁷%), rapid response speed (13 ms), and excellent long-term environmental stability. The multicomponent alloyed CdS_xSe_1-x nanobelt photodevice demonstrated about three times higher photocurrent as well as can operate under multiple color illuminations (200-800 nm) and at a high applied bias of 10 V with the photoresponsivity and EQE being boosted to 4.34 × 10⁵ A/W and 8.96 × 10⁷%, respectively. Furthermore, multicomponent alloyed CdS_xSe_1-x nanobelt flexible photodevices show excellent mechanical and flexural photostabilities with identical photoresponse as rigid nanodevices. The improvement mechanism found in the present research can be exploited to lead to the design of high-performance flexible photodevices comprising other multicomponent nanomaterials.

Improving the photoresponse performance of monolayer MoS2photodetector via local flexoelectric effect

Strain engineering is an effective means of modulating the optical and electrical properties of two-dimensional materials. The flexoelectric effect caused by inhomogeneous strain exists in most dielectric materials, which breaks the limit of the materials' non-centrosymmetric structure for piezoelectric effect. However, there is a lack of understanding of the impact on optoelectronic behaviour of monolayer MoS₂photodetector via local flexoelectric effect triggered by biaxial strain. In this paper, we develop a probe tip (Pt)-MoS₂-Au asymmetric Schottky barrier photodetector based on conductive atomic force microscopy to investigate the impact of flexoelectric effect on the photoresponse performance. Consequently, when the probe force increases from 24 nN to 720 nN, the photocurrent, responsivity and detectivity increase 28.5 times, 29.6 times and 5.3 times at forward bias under 365 nm light illumination, respectively. These results indicate that local flexoelectric effect plays a critical role to improve the photoresponse performance of photodetector. Our approach suggests a new route to improve the performance of photodetectors by introducing local flexoelectric polarization field, offering the potential for the application of strain modulated photoelectric devices.

Spectral Engineering of InSe Nanobelts for Full-Color Imaging by Tailoring the Thickness

In this work, we report on the synthesis of InSe nanobelts through a catalyst-free chemical vapor deposition (CVD) growth approach. A remarkable blue shift of the peak photoresponse was observed when the thickness of the InSe nanobelt decreases from 562 to 165 nm. Silvaco Technology Computer Aided Design (TCAD) simulation reveals that such a shift in spectral response should be ascribed to the wavelength-dependent absorption coefficient of InSe, for which incident light with shorter wavelengths will be absorbed near the surface, while light with longer wavelengths will have a greater penetration depth, leading to a red shift of the absorption edge for thicker nanobelt devices. Considering the above theory, three kinds of photodetectors sensitive to blue (450 nm), green (530 nm), and red (660 nm) incident light were achieved by tailoring the thickness of the nanobelts, which can enable the spectral reconstruction of a purple "H" pattern, suggesting the potential application of 2D layered semiconductors in full-color imaging.

Epitaxial Topological Insulator Bi2Te3 for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium

Three dimensional topological insulators have a thriving application prospect in broadband photodetectors due to the possessed topological quantum states. Herein, a large area and uniform topological insulator bismuth telluride (Bi₂Te₃) layer with high crystalline quality is directly epitaxial grown on GaAs(111)B wafer using a molecular beam epitaxy process, ensuring efficient out-of-plane carriers transportation due to reduced interface defects influence. By tiling monolayer graphene (Gr) on the as-prepared Bi₂Te₃ layer, a Gr/Bi₂Te₃/GaAs heterojunction array prototype was further fabricated, and our photodetector array exhibited the capability of sensing ultrabroad photodetection wavebands from visible (405 nm) to mid-infrared (4.5 μm) with a high specific detectivity (D*) up to 10¹² Jones and a fast response speed at about microseconds at room temperature. The enhanced device performance can be attributed to enhanced light-matter interaction at the high-quality heterointerface of Bi₂Te₃/GaAs and improved carrier collection efficiency through graphene as a charge collection medium, indicating an application prospect of topological insulator Bi₂Te₃ for fast-speed broadband photodetection up to a mid-infrared waveband. This work demonstrated the potential of integrated topological quantum materials with a conventional functional substrate to fabricate the next generation of broadband photodetection devices for uncooled focal plane array or infrared communication systems in future.

Molecular-Layer-Defined Asymmetric Schottky Contacts in Organic Planar Diodes for Self-Powered Optoelectronic Synapses

Optoelectronic synapses have been utilized as neuromorphic vision sensors for image preprocessing in artificial visual systems. Self-powered optoelectronic synapses, which can directly convert optical power into electrical power, are promising for practical applications. The Schottky junction tends to be a promising candidate as the energy source for electrical operations. However, fully utilizing the potential of Schottky barriers is still challenging. Herein, organic self-powered optoelectronic synapses with planar diode architecture are fabricated, which can simultaneously sense and process ultraviolet (UV) signals. The photovoltaic operations are facilitated by the built-in potential originating from the molecular-layer-defined asymmetric Schottky contacts. Diverse synaptic behaviors under UV light stimulation without external power supplies are facilitated by the interfacial carrier-capturing layer, which emulates the membranes of synapses. Furthermore, retina-inspired image preprocessing functions are demonstrated on the basis of synaptic plasticity. Therefore, our devices provide the potential for the development of power-efficient and advanced artificial visual systems.

Emerging Logic Devices beyond CMOS

Si-based complementary metal-oxide-semiconductor (CMOS) transistors for logic computing have represented the most essential foundation of digital electronic technologies for decades toward the modern information era. The continuous scaling down of the transistor feature size has promoted significant improvements in the computing performance while gradually tending to its limit. Ubiquitous intelligent technologies have quickly penetrated daily life, yielding a tremendous increase in highly data-centric computing applications. Hence, emerging logic devices extending and even transcending the existing CMOS technology are urgently needed to meet the rapidly growing demand for information processing capability, involving revolutionary innovations from material science and architecture design to device applications. This thus gives us the opportunity to realize logic devices for state-of-the-art computing that are fundamentally far beyond the current devices. In this Perspective, we discuss the recent innovative design strategies of emerging logic devices along with the opportunities and challenges, providing a promising avenue toward high-performance and diversiform logic computing in the post-Moore era.

Retina-Inspired Self-Powered Artificial Optoelectronic Synapses with Selective Detection in Organic Asymmetric Heterojunctions

The retina, the most crucial unit of the human visual perception system, combines sensing with wavelength selectivity and signal preprocessing. Incorporating energy conversion into these superior neurobiological features to generate core visual signals directly from incoming light under various conditions is essential for artificial optoelectronic synapses to emulate biological processing in the real retina. Herein, self-powered optoelectronic synapses that can selectively detect and preprocess the ultraviolet (UV) light are presented, which benefit from high-quality organic asymmetric heterojunctions with ultrathin molecular semiconducting crystalline films, intrinsic heterogeneous interfaces, and typical photovoltaic properties. These devices exhibit diverse synaptic behaviors, such as excitatory postsynaptic current, paired-pulse facilitation, and high-pass filtering characteristics, which successfully reproduce the unique connectivity among sensory neurons. These zero-power optical-sensing synaptic operations further facilitate a demonstration of image sharpening. Additionally, the charge transfer at the heterojunction interface can be modulated by tuning the gate voltage to achieve multispectral sensing ranging from the UV to near-infrared region. Therefore, this work sheds new light on more advanced retinomorphic visual systems in the post-Moore era.

Zero power infrared sensing in 2D/3D-assembled heterogeneous graphene/In/InSe/Au

Low- or self-powered infrared sensors can be used in a broad range of applications, including networking mobile edge devices and image recognition for autonomous driving technology. Here, we show state-of-the-art self-powered near-infrared (NIR) sensors using graphene/In/InSe/Au as a photoactive region. The self-powered NIR sensors show outstanding performance, achieving a photoresponsivity of ∼8.5 A W^-1 and a detectivity of ∼10¹² Jones at 850 nm light. Multiple self-powered InSe photodetectors with different device structures and contacts were systematically investigated. In particular, the asymmetrically assembled graphene/In/InSe/Au vertical heterostructure offers a high built-in field, which gives rise to efficient electron-hole pair separation and transit time that is shorter than the photocarrier lifetime. The built-in potential across the InSe was estimated using the Schottky barrier height at each metal contact with InSe, obtained using density functional theory calculations. We also demonstrate InSe vertical field-effect transistors and provide an out-of-plane carrier mobility of InSe. Using the out-of-plane mobility and structural parameters of each device, the built-in field, drift velocity, and corresponding transit time are estimated.

Recent progress in self-powered multifunctional e-skin for advanced applications

Electronic skin (e-skin), new generation of flexible wearable electronic devices, has characteristics including flexibility, thinness, biocompatibility with broad application prospects, and a crucial place in future wearable electronics. With the increasing demand for wearable sensor systems, the realization of multifunctional e-skin with low power consumption or even autonomous energy is urgently needed. The latest progress of multifunctional self-powered e-skin for applications in physiological health, human-machine interaction (HMI), virtual reality (VR), and artificial intelligence (AI) is presented here. Various energy conversion effects for the driving energy problem of multifunctional e-skin are summarized. An overview of various types of self-powered e-skins, including single-effect e-skins and multifunctional coupling-effects e-skin systems is provided, where the aspects of material preparation, device assembly, and output signal analysis of the self-powered multifunctional e-skin are described. In the end, the existing problems and prospects in this field are also discussed.

High-Performance, Polarization-Sensitive, Long-Wave Infrared Photodetection via Photothermoelectric Effect with Asymmetric van der Waals Contacts

Long-wavelength infrared (LWIR) photodetection is important for heat-seeking technologies, such as thermal imaging, all-weather surveillance, and missile guidance. Among various detection techniques, photothermoelectric (PTE) detectors are promising in that they can realize ultra-broadband photodetection at room temperature without an external power supply. However, their performance in terms of speed, responsivity, and noise level in the LWIR regime still needs further improvement. Here, we demonstrated a high-performance PTE photodetector based on low-symmetry palladium selenide (PdSe₂) with asymmetric van der Waals contacts. The temperature gradient induced by asymmetric van der Waals contacts even under global illumination drives carrier diffusion to produce a photovoltage via the PTE effect. A responsivity of over 13 V/W, a response time of ∼50 μs, and a noise equivalent power of less than 7 nW/Hz^1/2 are obtained in the 4.6-10.5 μm regime at room temperature. Furthermore, due to the anisotropic absorption of PdSe₂, the detector exhibits a linear polarization angle sensitive response with an anisotropy ratio of 2.06 at 4.6 μm and 1.21 at 10.5 μm, respectively. Our proposed device architecture provides an alternative strategy to design high-performance photodetectors in the LWIR regime by utilizing van der Waals layered materials.

High performance sub-bandgap photodetection via internal photoemission based on ideal metal/2D-material van der Waals Schottky interface

Two-dimensional (2D) materials have been demonstrated to be promising candidates to design high performance photodetectors owing to their strong light-matter interaction. However, the performance of 2D material photodetectors is still unsatisfactory, such as slow response speed due to defects and vulnerable contact interface, which impede their rapid development in the field of optoelectronics. In this paper, we obtained the ideal and large photosensitive van der Waals Schottky interface by the laminating-flipping method. Hence, a fast response speed (<1 ms) and high detectivity (>10¹² Jones) are observed on the van der Waals Schottky junction photodiode. More importantly, benefiting from the flat Schottky interface (the roughness ∼0.6 nm), a sub-bandgap light response modulated by the Schottky barrier height (cut-off edge at 1050 nm) has been detected based on the large Au/MoSe₂ sensitive Schottky interface internal photoemission. As a result, a universal strategy for the sub-bandgap near-infrared van der Waals Schottky junction detector of 2D materials was obtained.

Ultrafast and stable planar photodetector based on SnS2 nanosheets/perovskite structure

Two-dimensional (2D) transition metal dichalcogenides are promising candidates of photodetectors where they are commonly grown parallel to the substrate due to their 2D characteristics in micrometer scales from exfoliation of bulk crystals or through high temperature chemical vapor deposition (CVD) methods. In this study, semi-hexagonal vertical nanosheets of SnS2 layered have been fabricated on FTO substrate without using Sn source through CVD method at relatively low temperature (500 °C). Due to exceptional band alignment of triple cation lead perovskite (TCLP) with semi-hexagonal SnS2 nanosheets, an improved photodetector has been fabricated. This type of photodetectors fabricated through lithography-free and electrodes metallization free approach with remarkable fast response (20.7 µs/31.4 µs as rising /falling times), showed high photoresponsivity, external quantum efficiency and detectivity of 1.84 AW-1, 513% and 1.69 × 1011, respectively under illumination of incident light with wavelength of 445 nm. The stability of the photodetectors has been studied utilizing a protective PMMA layer on the perovskite layer in 100% humidity. The introduced growth and fabrication process of the planar photodetector, including one/two dimensional interface through the edges/basal planes of layered materials with perovskite film, paves a way for the large scale, cost-effective and high-performance optoelectronic devices.

Photovoltaic Field-Effect Photodiodes Based on Double van der Waals Heterojunctions

High performance photodetectors based on van der Waals heterostructures (vdWHs) are crucial to developing micro-nano-optoelectronic devices. However, reports show that it is difficult to balance fast response and high sensitivity. In this work, we design a photovoltaic field-effect photodiode (PVFED) based on the WSe₂/MoS₂/WSe₂ double vdWHs, where the photovoltage that originated from one vdWH modulates the optoelectronic characteristics of another vdWH. The proposed photodiode exhibits an excellent self-powered ability with a high responsivity of 715 mA·W^-1 and fast response time of 45 μs. This work demonstrates an efficient method that optimizes the photoelectric performance of vdWH by introducing the photovoltaic field effect.

Repression of Interlayer Recombination by Graphene Generates a Sensitive Nanostructured 2D vdW Heterostructure Based Photodetector

Great success in 2D van der Waals (vdW) heterostructures based photodetectors is obtained owing to the unique electronic and optoelectronic properties of 2D materials. Performance of photodetectors based 2D vdW heterojunctions at atomic scale is more sensitive to the nanointerface of the heterojunction than conventional bulk heterojunction. Here, a nanoengineered heterostructure for the first-time demonstration of a nanointerface using an inserted graphene layer between black phosphorus (BP) and InSe which inhibits interlayer recombination and greatly improves photodetection performances is presented. In addition, a transition of the transport characteristics of the device is induced by graphene, from diffusion motion of minority carriers to drift motion of majority carriers. These two reasons together with an internal photoemission effect make the BP/G/InSe-based photodetector have ultrahigh specific detectivity at room temperature. The results demonstrate that high-performance vdW heterostructure photodetectors can be achieved through simple structural manipulation of the heterojunction interface on nanoscale.

Cross-Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate

Exploring 2D ultrawide bandgap semiconductors (UWBSs) will be conductive to the development of next-generation nanodevices, such as deep-ultraviolet photodetectors, single-photon emitters, and high-power flexible electronic devices. However, a gap still remains between the theoretical prediction of novel 2D UWBSs and the experimental realization of the corresponding materials. The cross-substitution process is an effective way to construct novel semiconductors with the favorable parent characteristics (e.g., structure) and the better physicochemical properties (e.g., bandgap). Herein, a simple case is offered for rational design and syntheses of 2D UWBS GaPS₄ by employing state-of-the-art GeS₂ as a similar structural model. Benefiting from the cosubstitution of Ge with lighter Ga and P, the GaPS₄ crystals exhibit sharply enlarged optical bandgaps (few-layer: 3.94 eV and monolayer: 4.50 eV) and superior detection performances with high responsivity (4.89 A W^-1 ), high detectivity (1.98 × 10¹² Jones), and high quantum efficiency (2.39 × 10³ %) in the solar-blind ultraviolet region. Moreover, the GaPS₄ -based photodetector exhibits polarization-sensitive photoresponse with a linear dichroic ratio of 1.85 at 254 nm, benefitting from its in-plane structural anisotropy. These results provide a pathway for the discovery and fabrication of 2D UWBS anisotropic materials, which become promising candidates for future solar-blind ultraviolet and polarization-sensitive sensors.

A high performance self-powered photodetector based on a 1D Te-2D WS2 mixed-dimensional heterostructure

One-dimensional (1D)-two-dimensional (2D) van der Waals (vdWs) mixed-dimensional heterostructures with advantages of an atomically sharp interface, high quality and good compatibility have attracted tremendous attention in recent years. Herein, a mixed-dimensional vertical heterostructure is constructed by transferring mechanically exfoliated 2D WS₂ nanosheets on epitaxially grown 1D tellurium (Te) microwires. According to the theoretical type-II band alignment, the device exhibits a photovoltaic effect and serves as an excellent self-powered photodetector with a maximum open-circuit voltage (V _oc) up to ∼0.2 V. Upon 635 nm light illumination, the photoresponsivity, external quantum efficiency and detectivity of the self-powered photodetector (SPPD) are calculated to be 471 mA W^-1, 91% and 1.24 × 10¹² Jones, respectively. Moreover, the dark current of the SPPD is highly suppressed to the sub-pA level due to the large lateral built-in electric field, which leads to a high I _light/I _dark ratio of 10⁴ with a rise time of 25 ms and decay time of 14.7 ms. The abovementioned properties can be further enhanced under a negative bias of -2 V. In brief, the 1D Te-2D WS₂ mixed-dimensional heterostructures have great application potential in high performance photodetectors and photovoltaics.

Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures

Van der Waals (vdW) heterostructures, consisting of a variety of low-dimensional materials, have great potential use in the design of a wide range of functional devices thanks to their atomically thin body and strong electrostatic tunability. Here, we demonstrate multi-functional indium selenide (InSe)/black phosphorous (BP) heterostructures encapsulated by hexagonal boron nitride. At a positive drain bias (V_D), applied on the BP while the InSe is grounded, our heterostructures show an intermediate gate voltage (V_BG) regime where the current hardly changes, working as a ternary transistor. By contrast, at a negative V_D, the device shows strong negative differential transconductance characteristics; the peak current increases up to ~5 μA and the peak-to-valley current ratio reaches 1600 at V_D = −2 V. Four-terminal measurements were performed on each layer, allowing us to separate the contributions of contact resistances and channel resistance. Moreover, multiple devices with different device structures and contacts were investigated, providing insight into the operation principle and performance optimization. We systematically investigated the influence of contact resistances, heterojunction resistance, channel resistance, and the thickness of BP on the detailed operational characteristics at different V_D and V_BG regimes.

A reduced-dimensional polar hybrid perovskite for self-powered broad-spectrum photodetection

Polar hybrid perovskites have been explored for self-powered photodetection benefitting from prominent transport of photo-induced carriers and the bulk photovoltaic effect (BPVE). However, these self-powered photodetection ranges are relatively narrow depending on their intrinsic wide bandgaps (>2.08 eV), and the realization of broad-spectrum self-powered photodetection is still a difficult task. Herein, we successfully obtained a polar multilayered perovskite, (I-BA)2(MA)2Pb3I10 (IMP, MA+ = methylammonium and I-BA+ = 4-iodobutylammonium), via rational dimension reduction of CH3NH3PbI3. It features the narrowest bandgap of 1.71 eV in a BPV material. As a consequence, the integration of narrow bandgap and BPVE causes the self-powered photodetection to extend to 724 nm for IMP, and a repeatable photovoltaic current reaching 1.0 μA cm-2 is acquired with a high "on/off" ratio of ∼103 and photodetectivity (∼109 Jones) at zero bias. This innovative research provides a foothold for adjusting the physical properties of hybrid perovskites and will expand their potential for self-powered broad-spectrum detection.