Charge Transport in and Electroluminescence from sp3-Functionalized Carbon Nanotube Networks

Correlation Measurements for Carbon Nanotubes with Quantum Defects

Single-photon sources are essential building blocks for the development of photonic quantum technology. Regarding potential practical application, an on-demand electrically driven quantum-light emitter on a chip is notably crucial for photonic integrated circuits. Here, we propose functionalized single-walled carbon nanotube field-effect transistors as a promising solid-state quantum-light source by demonstrating photon antibunching behavior via electrical excitation. The sp3 quantum defects were formed on the surface of (7, 5) carbon nanotubes by 3,5-dichlorophenyl functionalization, and individual carbon nanotubes were wired to graphene electrode pairs. Filtered electroluminescent defect-state emission at 77 K was coupled into a Hanbury Brown and Twiss experiment setup, and single-photon emission was observed by performing second-order correlation function measurements. We discuss the dependence of the intensity correlation measurement on electrical power and emission wavelength, highlighting the challenges of performing such measurements while simultaneously analyzing acquired data. Our results indicate a route toward room-temperature electrically triggered single-photon emission.

Infrared Light-Emitting Diodes Based on Chirality-Sorted Carbon Nanotube Films

An important goal in carbon nanotube optoelectronics is to achieve a high-performance near-infrared light source. But there are still many challenges such as the purity of single-walled carbon nanotube (SWCNT) chirality, nonradiative defects, thin-film quality, and device structure design. Here, we realize infrared light-emitting diodes (LEDs) based on chirality-sorted (10, 5) SWCNT network films, which operate at a low bias voltage and emit at a telecom O band of 1290 nm. Asymmetric palladium (Pd) and hafnium (Hf) contacts are used as electrodes for hole and electron injection, respectively. However, the large Schottky barrier at the interface of the SWCNTs and the Hf electrode, primarily resulting from the polymer wrapped on the nanotube surface during the sorting process, leads to inefficient electron injection and thus a low electroluminescence efficiency. We find that the efficiency of electron injection can be improved by the local doping of the nanotubes with dielectric layers of YOX-HfO2, which reduces the Schottky barrier at the SWCNT/Hf interface. Accordingly, the (10, 5) SWCNT film-based LED achieves an external quantum efficiency of larger than 0.05% without any optical coupling structure. With further improvement, we expect that such an infrared light source will have great application potential in the carbon nanotube monolithic optoelectronic integrated system and on-chip optical interconnection, especially in the field of short-distance optical fiber communications and data center.

Unified Quantification of Quantum Defects in Small-Diameter Single-Walled Carbon Nanotubes by Raman Spectroscopy

The covalent functionalization of single-walled carbon nanotubes (SWCNTs) with luminescent quantum defects enables their application as near-infrared single-photon sources, as optical sensors, and for in vivo tissue imaging. Tuning the emission wavelength and defect density is crucial for these applications. While the former can be controlled by different synthetic protocols and is easily measured, defect densities are still determined as relative rather than absolute values, limiting the comparability between different nanotube batches and chiralities. Here, we present an absolute and unified quantification metric for the defect density in SWCNT samples based on Raman spectroscopy. It is applicable to a range of small-diameter semiconducting nanotubes and for arbitrary laser wavelengths. We observe a clear inverse correlation of the D/G+ ratio increase with nanotube diameter, indicating that curvature effects contribute significantly to the defect activation of Raman modes. Correlation of intermediate frequency modes with defect densities further corroborates their activation by defects and provides additional quantitative metrics for the characterization of functionalized SWCNTs.

Tuning Electroluminescence from Functionalized SWCNT Networks Further into the Near-Infrared

Near-infrared electroluminescence from carbon-based emitters, especially in the second biological window (NIR-II) or at telecommunication wavelengths, is difficult to achieve. Single-walled carbon nanotubes (SWCNTs) have been proposed as a possible solution due to their tunable and narrowband emission in the near-infrared region and high charge carrier mobilities. Furthermore, the covalent functionalization of SWCNTs with a controlled number of luminescent sp3 defects leads to even more red-shifted photoluminescence with enhanced quantum yields. Here, we demonstrate that by tailoring the binding configuration of the introduced sp3 defects and hence tuning their optical trap depth, we can generate emission from polymer-sorted (6,5) and (7,5) nanotubes that is mainly located in the telecommunication O-band (1260-1360 nm). Networks of these functionalized nanotubes are integrated in ambipolar, light-emitting field-effect transistors to yield the corresponding narrowband near-infrared electroluminescence. Further investigation of the current- and carrier density-dependent electro- and photoluminescence spectra enables insights into the impact of different sp3 defects on charge transport in networks of functionalized SWCNTs.

Stochastic Formation of Quantum Defects in Carbon Nanotubes

Small perturbations in the structure of materials significantly affect their properties. One example is single wall carbon nanotubes (SWCNTs), which exhibit chirality-dependent near-infrared (NIR) fluorescence. They can be modified with quantum defects through the reaction with diazonium salts, and the number or distribution of these defects determines their photophysics. However, the presence of multiple chiralities in typical SWCNT samples complicates the identification of defect-related emission features. Here, we show that quantum defects do not affect aqueous two-phase extraction (ATPE) of different SWCNT chiralities into different phases, which suggests low numbers of defects. For bulk samples, the bandgap emission (E11) of monochiral (6,5)-SWCNTs decreases, and the defect-related emission feature (E11*) increases with diazonium salt concentration and represents a proxy for the defect number. The high purity of monochiral samples from ATPE allows us to image NIR fluorescence contributions (E11 = 986 nm and E11* = 1140 nm) on the single SWCNT level. Interestingly, we observe a stochastic (Poisson) distribution of quantum defects. SWCNTs have most likely one to three defects (for low to high (bulk) quantum defect densities). Additionally, we verify this number by following single reaction events that appear as discrete steps in the temporal fluorescence traces. We thereby count single reactions via NIR imaging and demonstrate that stochasticity plays a crucial role in the optical properties of SWCNTs. These results show that there can be a large discrepancy between ensemble and single particle experiments/properties of nanomaterials.

Activating Hydrogen Evolution Reaction on Carbon Nanotube via Aryl Functionalisation: The Role of Hybrid sp2-sp3 Interface and Curvature

The hydrogen evolution reaction (HER) is a remarkable mechanism which yields the production of hydrogen through a process of water electrolysis. However, the evolution of hydrogen requires highly conductive and stable catalysts, such as the noble metal platinum (Pt). However, the problem lies in the limitations that this catalyst and others of its kind present. Due to limited availability, as well as the costs involved in acquiring such catalysts, researchers are challenged to manufacture catalysts that do not present these limitations. Carbon nanotubes (CNTs), which are nanomaterials, are known to have a wide range of applications. However, specifically, the pristine carbon nanotube is not suitable for the HER due to the binding free energy of its positive H-atoms. Hence, for the first time, we demonstrated the use of the proposed aryl-functionalised catalysts, i.e., Aryl-L@SWCNT (L = Br, CCH, Cl, CO₂CH₃, F, I, NO₂, or t-butyl), along with the effect of the sp2-sp3 hybridised interface through the density functional theory (DFT). We performed calculations of single-walled carbon nanotubes with multiple aryl functional groups. By employing the DFT calculations, we proved that the curvature of the nanotubes along with the proposed aryl-functionalised catalysts had a noteworthy effect on the performance of the HER. Our study opens the door to investigating a promising group of catalysts for sustainable hydrogen production.

On-the-Fly Nonadiabatic Dynamics Simulations of Single-Walled Carbon Nanotubes with Covalent Defects

Single-walled carbon nanotubes (SWCNTs) with covalent surface defects have been explored recently due to their promise for use in single-photon telecommunication emission and in spintronic applications. The all-atom dynamic evolution of electrostatically bound excitons (the primary electronic excitations) in these systems has only been loosely explored from a theoretical perspective due to the size limitations of these large systems (>500 atoms). In this work, we present computational modeling of nonradiative relaxation in a variety of SWCNT chiralities with single-defect functionalizations. Our excited-state dynamics modeling uses a trajectory surface hopping algorithm accounting for excitonic effects with a configuration interaction approach. We find a strong chirality and defect-composition dependence on the population relaxation (varying over 50-500 fs) between the primary nanotube band gap excitation E₁₁ and the defect-associated, single-photon-emitting E₁₁* state. These simulations give direct insight into the relaxation between the band-edge states and the localized excitonic state, in competition with dynamic trapping/detrapping processes observed in experiment. Engineering fast population decay into the quasi-two-level subsystem with weak coupling to higher-energy states increases the effectiveness and controllability of these quantum light emitters.

Impact of Dielectric Environment on Trion Emission from Single-Walled Carbon Nanotube Networks

Trions are charged excitons that form upon optical or electrical excitation of low-dimensional semiconductors in the presence of charge carriers (holes or electrons). Trion emission from semiconducting single-walled carbon nanotubes (SWCNTs) occurs in the near-infrared and at lower energies compared to the respective exciton. It can be used as an indicator for the presence of excess charge carriers in SWCNT samples and devices. Both excitons and trions are highly sensitive to the surrounding dielectric medium of the nanotubes, having an impact on their application in optoelectronic devices. Here, the influence of different dielectric materials on exciton and trion emission from electrostatically doped networks of polymer-sorted (6,5) SWCNTs in top-gate field-effect transistors is investigated. The observed differences of trion and exciton emission energies and intensities for hole and electron accumulation cannot be explained with the polarizability or screening characteristics of the different dielectric materials, but they show a clear dependence on the charge trapping properties of the dielectrics. Charge localization (trapping of holes or electrons by the dielectric) reduces exciton quenching, emission blue-shift and trion formation. Based on the observed carrier type and dielectric material dependent variations, the ratio of trion to exciton emission and the exciton blue-shift are not suitable as quantitative metrics for doping levels of carbon nanotubes.

Electroluminescence from Single-Walled Carbon Nanotubes with Quantum Defects

Individual single-walled carbon nanotubes with covalent sidewall defects have emerged as a class of photon sources whose photoluminescence spectra can be tailored by the carbon nanotube chirality and the attached functional group/molecule. Here we present electroluminescence spectroscopy data from single-tube devices based on (7, 5) carbon nanotubes, functionalized with dichlorobenzene molecules, and wired to graphene electrodes. We observe electrically generated, defect-induced emissions that are controllable by electrostatic gating and strongly red-shifted compared to emissions from pristine nanotubes. The defect-induced emissions are assigned to excitonic and trionic recombination processes by correlating electroluminescence excitation maps with electrical transport and photoluminescence data. At cryogenic conditions, additional gate-dependent emission lines appear, which are assigned to phonon-assisted hot-exciton electroluminescence from quasi-levels. Similar results were obtained with functionalized (6, 5) nanotubes. We also compare functionalized (7, 5) electroluminescence data with photoluminescence of pristine and functionalized (7, 5) nanotubes redox-doped using gold(III) chloride solution. This work shows that electroluminescence excitation is selective toward neutral defect-state configurations with the lowest transition energy, which in combination with gate-control over neutral versus charged defect-state emission leads to high spectral purity.

Probing Carrier Dynamics in sp3-Functionalized Single-Walled Carbon Nanotubes with Time-Resolved Terahertz Spectroscopy

The controlled introduction of covalent sp³ defects into semiconducting single-walled carbon nanotubes (SWCNTs) gives rise to exciton localization and red-shifted near-infrared luminescence. The single-photon emission characteristics of these functionalized SWCNTs make them interesting candidates for electrically driven quantum light sources. However, the impact of sp³ defects on the carrier dynamics and charge transport in carbon nanotubes remains an open question. Here, we use ultrafast, time-resolved optical-pump terahertz-probe spectroscopy as a direct and quantitative technique to investigate the microscopic and temperature-dependent charge transport properties of pristine and functionalized (6,5) SWCNTs in dispersions and thin films. We find that sp³ functionalization increases charge carrier scattering, thus reducing the intra-nanotube carrier mobility. In combination with electrical measurements of SWCNT network field-effect transistors, these data enable us to distinguish between contributions of intra-nanotube band transport, sp³ defect scattering and inter-nanotube carrier hopping to the overall charge transport properties of nanotube networks.

Polymethyl(1-Butyric acidyl)silane-Assisted Dispersion and Density Gradient Ultracentrifugation Separation of Single-Walled Carbon Nanotubes

Individual single–walled carbon nanotubes (SWNTs) with distinct electronic types are crucial for the fabrication of SWNTs–based electronic and magnetic devices. Herein, the water–soluble polymethyl(1–butyric acidyl)silane (BA–PMS) was synthesized via the hydrosilylation reaction between 3–butenoic acid and polymethylsilane catalyzed by 2,2′–azodibutyronitrile. As a new dispersant, BA–PMS displayed a quite good dispersing capacity to arc–discharged SWNTs and moderate selectivity for metallic species. The application of sucrose–DGU, the density gradient ultracentrifugation with sucrose as the gradient medium, to the co–surfactants (BA–PMS and sodium dodecyl sulfonate) individually dispersed SWNTs yielded metallic SWNTs of 85.6% purity and semiconducting SWNTs of 99% purity, respectively. This work paves a path to the DGU separation of the SWNTs dispersed by polymer–based dispersants with hydrophobic alkyl chains.

Recent Advances in Structure Separation of Single-Wall Carbon Nanotubes and Their Application in Optics, Electronics, and Optoelectronics

Structural control of single-wall carbon nanotubes (SWCNTs) with uniform properties is critical not only for their property modulation and functional design but also for applications in electronics, optics, and optoelectronics. To achieve this goal, various separation techniques have been developed in the past 20 years through which separation of high-purity semiconducting/metallic SWCNTs, single-chirality species, and even their enantiomers have been achieved. This progress has promoted the property modulation of SWCNTs and the development of SWCNT-based optoelectronic devices. Here, the recent advances in the structure separation of SWCNTs are reviewed, from metallic/semiconducting SWCNTs, to single-chirality species, and to enantiomers by several typical separation techniques and the application of the corresponding sorted SWCNTs. Based on the separation procedure, efficiency, and scalability, as well as, the separable SWCNT species, purity, and quantity, the advantages and disadvantages of various separation techniques are compared. Combined with the requirements of SWCNT application, the challenges, prospects, and development direction of structure separation are further discussed.

Absolute Quantification of sp3 Defects in Semiconducting Single-Wall Carbon Nanotubes by Raman Spectroscopy

The functionalization of semiconducting single-wall carbon nanotubes (SWCNTs) with luminescent sp³ defects creates red-shifted emission features in the near-infrared and boosts their photoluminescence quantum yields (PLQYs). While multiple synthetic routes for the selective introduction of sp³ defects have been developed, a convenient metric to precisely quantify the number of defects on a SWCNT lattice is not available. Here, we present a direct and simple quantification protocol based on a linear correlation of the integrated Raman D/G⁺ signal ratios and defect densities as extracted from PLQY measurements. Corroborated by a statistical analysis of single-nanotube emission spectra at cryogenic temperature, this method enables the quantitative evaluation of sp³ defect densities in (6,5) SWCNTs with an error of ±3 defects per micrometer and the determination of oscillator strengths for different defect types. The developed protocol requires only standard Raman spectroscopy and is independent of the defect configuration, dispersion solvent, and nanotube length.

Carbon Nanotube Devices for Quantum Technology

Carbon nanotubes, quintessentially one-dimensional quantum objects, possess a variety of electrical, optical, and mechanical properties that are suited for developing devices that operate on quantum mechanical principles. The states of one-dimensional electrons, excitons, and phonons in carbon nanotubes with exceptionally large quantization energies are promising for high-operating-temperature quantum devices. Here, we discuss recent progress in the development of carbon-nanotube-based devices for quantum technology, i.e., quantum mechanical strategies for revolutionizing computation, sensing, and communication. We cover fundamental properties of carbon nanotubes, their growth and purification methods, and methodologies for assembling them into architectures of ordered nanotubes that manifest macroscopic quantum properties. Most importantly, recent developments and proposals for quantum information processing devices based on individual and assembled nanotubes are reviewed.