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Dragoman M, Dinescu A, Aldrigo M, Dragoman D. Quantum Graphene Asymmetric Devices for Harvesting Electromagnetic Energy. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1114. [PMID: 38998720 PMCID: PMC11243634 DOI: 10.3390/nano14131114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2024] [Revised: 06/26/2024] [Accepted: 06/27/2024] [Indexed: 07/14/2024]
Abstract
We present here the fabrication at the wafer level and the electrical performance of two types of graphene diodes: ballistic trapezoidal-shaped graphene diodes and lateral tunneling graphene diodes. In the case of the ballistic trapezoidal-shaped graphene diode, we observe a large DC current of 200 µA at a DC bias voltage of ±2 V and a large voltage responsivity of 2000 v/w, while in the case of the lateral tunneling graphene diodes, we obtain a DC current of 1.5 mA at a DC bias voltage of ±2 V, with a voltage responsivity of 3000 v/w. An extended analysis of the defects produced during the fabrication process and their influences on the graphene diode performance is also presented.
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Affiliation(s)
- Mircea Dragoman
- National Institute for Research and Development in Microtechnologies (IMT), Strada Erou Iancu Nicolae 126A, 077190 Voluntari, Romania
| | - Adrian Dinescu
- National Institute for Research and Development in Microtechnologies (IMT), Strada Erou Iancu Nicolae 126A, 077190 Voluntari, Romania
| | - Martino Aldrigo
- National Institute for Research and Development in Microtechnologies (IMT), Strada Erou Iancu Nicolae 126A, 077190 Voluntari, Romania
| | - Daniela Dragoman
- Physics Faculty, University of Bucharest, P.O. Box MG-11, 077125 Bucharest, Romania
- Academy of Romanian Scientists, Strada Ilfov, Nr. 3, 050044 Bucharest, Romania
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2
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Li Y, Yu W, Zhang K, Cui N, Yun T, Xia X, Jiang Y, Zhang G, Mu H, Lin S. Two-dimensional topological semimetals: an emerging candidate for terahertz detectors and on-chip integration. MATERIALS HORIZONS 2024; 11:2572-2602. [PMID: 38482962 DOI: 10.1039/d3mh02250a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2024]
Abstract
The importance of terahertz (THz) detection lies in its ability to provide detailed information in a non-destructive manner, making it a valuable tool across various domains including spectroscopy, communication, and security. The ongoing development of THz detectors aims to enhance their sensitivity, resolution and integration into compact and portable devices such as handheld scanners or integrated communication chips. Generally, two-dimensional (2D) materials are considered potential candidates for device miniaturization but detecting THz radiation using 2D semiconductors is generally difficult due to the ultra-small photon energy. However, this challenge is being addressed by the advent of topological semimetals (TSM) with zero-bandgap characteristics. These semimetals offer low-energy excitations in proximity to the Dirac point, which is particularly important for applications requiring a broad detection range. Their distinctive band structures with linear energy-momentum dispersion near the Fermi level also lead to high electron mobility and low effective mass. The presence of topologically protected dissipationless conducting channels and self-powered response provides a basis for low-energy integration. In order to establish paradigms for semimetal-based THz detectors, this review initially offers an analytical summary of THz detection principles. Then, the review demonstrates the distinct design of devices, the excellent performance derived from the topological surface state and unique band structures in TSM. Finally, we outline the prospective avenues for on-chip integration of TSM-based THz detectors. We believe this review can promote further research on the new generation of THz detectors and facilitate advancements in THz imaging, spectroscopy, and communication systems.
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Affiliation(s)
- Yun Li
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Kai Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- MOE Key Laboratory of Laser Life Science &Guangdong Provincial Key Laboratory of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou 510631, China
| | - Nan Cui
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Tinghe Yun
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Xue Xia
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Yan Jiang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
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3
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Meng Q, Zhao Y, Wang X, Su B, Zhang S, Cui H, Zhang C. Highly integrated automatic injection terahertz microfluidic biosensor based on metasurface and LT-GaAs photoconductive antenna. OPTICS EXPRESS 2024; 32:16867-16878. [PMID: 38858883 DOI: 10.1364/oe.518638] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2024] [Accepted: 04/09/2024] [Indexed: 06/12/2024]
Abstract
In this paper, a highly integrated terahertz (THz) biosensor is proposed and implemented, which pioneered the preparation of low-temperature gallium arsenide (LT-GaAs) thin film photoconductive antenna (PCA) on the sensor for direct generation and detection of THz waves, simplifying complex terahertz time-domain spectroscopy (THz-TDS) systems. A latch type metasurface is deposited in the detection region to produce a resonance absorption peak at 0.6 THz that is independent of polarisation. Microfluidics is utilised and automatic injection is incorporated to mitigate the experimental effects of hydrogen bond absorption of THz waves in aqueous-based environment. Additionally, cell damage is minimised by regulating the cell flow rate. The biosensor was utilised to detect the concentration of three distinct sizes of bacteria with successful results. The assay was executed as a proof of concept to detect two distinct types of breast cancer cells. Based on the experimental findings, it has been observed that the amplitude and blueshift of the resonance absorption peaks have the ability to identify and differentiate various cancer cell types. The findings of this study introduce a novel approach for developing microfluidic THz metasurface biosensors that possess exceptional levels of integration, sensitivity, and rapid label-free detection capabilities.
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4
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Jiang M, Zhang K, Lv X, Wang L, Zhang L, Han L, Xing H. Monolayer Graphene Terahertz Detector Integrated with Artificial Microstructure. SENSORS (BASEL, SWITZERLAND) 2023; 23:3203. [PMID: 36991914 PMCID: PMC10056542 DOI: 10.3390/s23063203] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/23/2023] [Revised: 03/13/2023] [Accepted: 03/15/2023] [Indexed: 06/19/2023]
Abstract
Graphene, known for its high carrier mobility and broad spectral response range, has proven to be a promising material in photodetection applications. However, its high dark current has limited its application as a high-sensitivity photodetector at room temperature, particularly for the detection of low-energy photons. Our research proposes a new approach for overcoming this challenge by designing lattice antennas with an asymmetric structure for use in combination with high-quality monolayers of graphene. This configuration is capable of sensitive detection of low-energy photons. The results show that the graphene terahertz detector-based microstructure antenna has a responsivity of 29 V·W-1 at 0.12 THz, a fast response time of 7 μs, and a noise equivalent power of less than 8.5 pW/Hz1/2. These results provide a new strategy for the development of graphene array-based room-temperature terahertz photodetectors.
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Affiliation(s)
- Mengjie Jiang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Department of Optoelectronic Science and Engineering, Donghua University, Shanghai 201620, China
- State Key Laboratory for Infrared, Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai 200083, China
| | - Kaixuan Zhang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Department of Optoelectronic Science and Engineering, Donghua University, Shanghai 201620, China
- State Key Laboratory for Infrared, Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai 200083, China
| | - Xuyang Lv
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Department of Optoelectronic Science and Engineering, Donghua University, Shanghai 201620, China
- State Key Laboratory for Infrared, Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai 200083, China
| | - Lin Wang
- State Key Laboratory for Infrared, Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai 200083, China
| | - Libo Zhang
- State Key Laboratory for Infrared, Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, College of Physics and Optoelectronic Engineering, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou 310024, China
| | - Li Han
- State Key Laboratory for Infrared, Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, College of Physics and Optoelectronic Engineering, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou 310024, China
| | - Huaizhong Xing
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Department of Optoelectronic Science and Engineering, Donghua University, Shanghai 201620, China
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5
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Meng Q, Wang X, Zhang B, Qian S, Peng B, Zhou H, Su B, Zhang C. Magnetic induced terahertz modulation characteristics based on ferromagnetic nematic liquid crystals. SPECTROCHIMICA ACTA. PART A, MOLECULAR AND BIOMOLECULAR SPECTROSCOPY 2023; 289:122232. [PMID: 36525811 DOI: 10.1016/j.saa.2022.122232] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2022] [Revised: 11/21/2022] [Accepted: 12/08/2022] [Indexed: 06/17/2023]
Abstract
In recent years, solid state terahertz (THz) modulators have obtained rapid progress with the widespread use of two-dimensional (2D) materials in the field of THz; however, challenges remain in preparing flexible THz modulators. In this study, flexible ferromagnetic nematic materials were prepared by doping thermotropic nematic liquid crystals 5CB into magnetic fluids, and the influence of water was reduced by a self-made cyclic olefin copolymer (COC) microfluidic chip. THz modulation characteristics of magnetic fluid and ferromagnetic nematic liquid crystal (FNLC) under the induction of external magnetic field were compared using a THz time domain spectroscopy system. Under the action of a 91 mT magnetic field, the magnetic fluid has a maximum modulation depth (MD) of 54%. Under the same magnetic field, the maximum MD of the FNLC materials increase to 78% because of the rearrangement of Fe3O4 nanoparticles induced by the topological defect of the liquid crystal. We demonstrate that the magneto-optical effect is significantly enhanced in the ferromagnetic nematic liquid crystal hybrid system. This strategy of doping thermotropic nematic liquid crystals to enhance the magneto-optical effect has great potential for THz filtering, modulation, and sensing applications.
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Affiliation(s)
- Qinghao Meng
- Department of Physics, Capital Normal University, Beijing 100048, China; Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Beijing 100048, China; Beijing Advanced Innovation Centre for Imaging Theory and Technology, Beijing 100048, China; Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Beijing 100048, China
| | - Xueyan Wang
- Department of Physics, Capital Normal University, Beijing 100048, China
| | - Boyan Zhang
- Department of Physics, Capital Normal University, Beijing 100048, China; Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Beijing 100048, China; Beijing Advanced Innovation Centre for Imaging Theory and Technology, Beijing 100048, China; Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Beijing 100048, China
| | - Siyu Qian
- Department of Physics, Capital Normal University, Beijing 100048, China; Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Beijing 100048, China; Beijing Advanced Innovation Centre for Imaging Theory and Technology, Beijing 100048, China; Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Beijing 100048, China
| | - Bo Peng
- Department of Physics, Capital Normal University, Beijing 100048, China; Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Beijing 100048, China; Beijing Advanced Innovation Centre for Imaging Theory and Technology, Beijing 100048, China; Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Beijing 100048, China
| | - Hangyu Zhou
- Department of Physics, Capital Normal University, Beijing 100048, China
| | - Bo Su
- Department of Physics, Capital Normal University, Beijing 100048, China; Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Beijing 100048, China; Beijing Advanced Innovation Centre for Imaging Theory and Technology, Beijing 100048, China; Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Beijing 100048, China.
| | - Cunlin Zhang
- Department of Physics, Capital Normal University, Beijing 100048, China; Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Beijing 100048, China; Beijing Advanced Innovation Centre for Imaging Theory and Technology, Beijing 100048, China; Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Beijing 100048, China
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6
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Zanotto S, Bonatti L, Pantano MF, Mišeikis V, Speranza G, Giovannini T, Coletti C, Cappelli C, Tredicucci A, Toncelli A. Strain-Induced Plasmon Confinement in Polycrystalline Graphene. ACS PHOTONICS 2023; 10:394-400. [PMID: 36820323 PMCID: PMC9936574 DOI: 10.1021/acsphotonics.2c01157] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/24/2022] [Indexed: 06/18/2023]
Abstract
Terahertz spectroscopy is a perfect tool to investigate the electronic intraband conductivity of graphene, but a phenomenological model (Drude-Smith) is often needed to describe disorder. By studying the THz response of isotropically strained polycrystalline graphene and using a fully atomistic computational approach to fit the results, we demonstrate here the connection between the Drude-Smith parameters and the microscopic behavior. Importantly, we clearly show that the strain-induced changes in the conductivity originate mainly from the increased separation between the single-crystal grains, leading to enchanced localization of the plasmon excitations. Only at the lowest strain values explored, a behavior consistent with the deformation of the individual grains can instead be observed.
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Affiliation(s)
- Simone Zanotto
- NEST, Istituto Nanoscienze − CNR and Scuola Normale
Superiore, Piazza S. Silvestro 12, Pisa, 56127, Italy
| | - Luca Bonatti
- Scuola
Normale Superiore, Piazza dei Cavalieri 7, Pisa, 56126, Italy
| | - Maria F. Pantano
- Department
of Civil, Environmental and Mechanical Engineering, University of Trento, Via Mesiano 77, Trento, 38123, Italy
| | - Vaidotas Mišeikis
- Center
for Nanotechnology Innovation @NEST - Istituto Italiano di Tecnologia, Piazza S. Silvestro 12, Pisa, 56127, Italy
| | - Giorgio Speranza
- Centre
for Materials and Microsystems, Fondazione
Bruno Kessler, via Sommarive 18, Trento, I-38123, Italy
| | | | - Camilla Coletti
- Center
for Nanotechnology Innovation @NEST - Istituto Italiano di Tecnologia, Piazza S. Silvestro 12, Pisa, 56127, Italy
| | - Chiara Cappelli
- Scuola
Normale Superiore, Piazza dei Cavalieri 7, Pisa, 56126, Italy
| | - Alessandro Tredicucci
- Dipartimento
di Fisica ”E. Fermi” and CISUP, Università di Pisa, and Istituto Nanoscienze - CNR, Largo Pontecorvo 3, Pisa, 56127, Italy
| | - Alessandra Toncelli
- Dipartimento
di Fisica ”E. Fermi” and CISUP, Università di Pisa, and Istituto Nanoscienze - CNR, Largo Pontecorvo 3, Pisa, 56127, Italy
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7
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Deng J, Zhou J, Dai X, Bu Y, Li Z, Chen X. Photoresponse enhancement in a cavity-antenna-coupled graphene terahertz detector. NANOSCALE 2023; 15:1775-1781. [PMID: 36601861 DOI: 10.1039/d2nr05503a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The unique and excellent optoelectronic properties of graphene make it a promising material for THz detection. However, the huge gap between the atomic thickness of graphene and the long wavelength of THz radiation severely limits the efficiency of light absorption and the photoresponse. Although optical antennas are commonly used to concentrate THz waves into deep subwavelength regions, a large amount of power is re-radiated out as waste rather than being absorbed by the active material. Here, we propose a cavity-antenna hybrid structure to enhance the THz absorption in a graphene flake through interference manipulation and impedance matching. The photoresponse of the device under an impedance-matched condition is 15 times higher than that under an impedance-mismatched condition. The cavity-antenna-coupled graphene THz detector exhibits a responsivity of 10.2 mA W-1 and a noise-equivalent power of 0.92 nW Hz-0.5. The excellent performance of our device makes it one of the best room temperature sub-THz graphene detectors that we investigated. A theoretical model was established to analyze the interaction between the antenna-coupled graphene and the cavity structure. With a combination of both electrostatic doping and interference manipulation, the light coupling management by impedance matching can enhance the absorptance of graphene by more than two orders of magnitude. This work experimentally and theoretically revealed that the cavity-antenna hybrid structure can prominently enhance the responsivity of a tiny piece of graphene in the sub-THz regime. Meanwhile, this strategy can also be applied to enhance the absorptance of other low-dimensional or bulk materials.
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Affiliation(s)
- Jie Deng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, China
| | - Jing Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, China
| | - Xu Dai
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, China
| | - Yonghao Bu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, China
| | - Zhifeng Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, China
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8
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El-Sayed MA, Tselin AP, Ermolaev GA, Tatmyshevskiy MK, Slavich AS, Yakubovsky DI, Novikov SM, Vyshnevyy AA, Arsenin AV, Volkov VS. Non-Additive Optical Response in Transition Metal Dichalcogenides Heterostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12244436. [PMID: 36558289 PMCID: PMC9787828 DOI: 10.3390/nano12244436] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2022] [Revised: 12/04/2022] [Accepted: 12/09/2022] [Indexed: 05/27/2023]
Abstract
Van der Waals (vdW) heterostructures pave the way to achieve the desired material properties for a variety of applications. In this way, new scientific and industrial challenges and fundamental questions arise. One of them is whether vdW materials preserve their original optical response when assembled in a heterostructure. Here, we resolve this issue for four exemplary monolayer heterostructures: MoS2/Gr, MoS2/hBN, WS2/Gr, and WS2/hBN. Through joint Raman, ellipsometry, and reflectance spectroscopies, we discovered that heterostructures alter MoS2 and WS2 optical constants. Furthermore, despite the similarity of MoS2 and WS2 monolayers, their behavior in heterostructures is markedly different. While MoS2 has large changes, particularly above 3 eV, WS2 experiences modest changes in optical constants. We also detected a transformation from dark into bright exciton for MoS2/Gr heterostructure. In summary, our findings provide clear evidence that the optical response of heterostructures is not the sum of optical properties of its constituents.
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Affiliation(s)
- Marwa A. El-Sayed
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Department of Physics, Faculty of Science, Menoufia University, Shebin El-Koom 32511, Egypt
| | - Andrey P. Tselin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Photonics and Quantum Materials Department, Skolkovo Institute of Science and Technology, 3 Nobel, Moscow 143026, Russia
| | - Georgy A. Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Mikhail K. Tatmyshevskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Aleksandr S. Slavich
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Dmitry I. Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Sergey M. Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Andrey A. Vyshnevyy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Aleksey V. Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Valentyn S. Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
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9
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Dong Z, Guo W, Zhang L, Zhang Y, Chen J, Huang L, Chen C, Yang L, Ren Z, Zhang J, Yu W, Li J, Wang L, Zhang K. Excitonic Insulator Enabled Ultrasensitive Terahertz Photodetection with Efficient Low-Energy Photon Harvesting. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2204580. [PMID: 36354190 PMCID: PMC9798984 DOI: 10.1002/advs.202204580] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2022] [Revised: 09/29/2022] [Indexed: 06/11/2023]
Abstract
Despite the interest toward the terahertz (THz) rapidly increasing, the high-efficient detection of THz photon is not widely available due to the low photoelectric conversion efficiency at this low-energy photon regime. Excitonic insulator (EI) states in emerging materials with anomalous optical transitions and renormalized valence band dispersions render their nontrivial photoresponse, which offers the prospect of harnessing the novel EI properties for the THz detection. Here, an EI-based photodetector is developed for efficient photoelectric conversion in the THz band. High-quality EI material Ta2 NiSe5 is synthesized and the existence of the EI state at room temperature is confirmed. The THz scanning near-field optical microscopy experimentally reveals the strong light-matter interaction in the THz band of EI state in the Ta2 NiSe5 . Benefiting from the strong light-matter interaction, the Ta2 NiSe5 -based photodetectors exhibit superior THz detection performances with a detection sensitivity of ≈42 pW Hz-1/2 and a response time of ≈1.1 µs at 0.1 THz at room temperature. This study provides a new avenue for realizing novel high-performance THz photodetectors by exploiting the emerging EI materials.
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Affiliation(s)
- Zhuo Dong
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123P. R. China
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaJinzhai Road 96HefeiAnhui230026P. R. China
| | - Wanlong Guo
- State Key Laboratory for Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐tian RoadShanghai200083P. R. China
| | - Libo Zhang
- State Key Laboratory for Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐tian RoadShanghai200083P. R. China
| | - Yan Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123P. R. China
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaJinzhai Road 96HefeiAnhui230026P. R. China
| | - Jie Chen
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123P. R. China
| | - Luyi Huang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123P. R. China
| | - Cheng Chen
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123P. R. China
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaJinzhai Road 96HefeiAnhui230026P. R. China
| | - Liu Yang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123P. R. China
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaJinzhai Road 96HefeiAnhui230026P. R. China
| | - Zeqian Ren
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123P. R. China
| | - Junrong Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123P. R. China
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaJinzhai Road 96HefeiAnhui230026P. R. China
| | - Wenzhi Yu
- Songshan Lake Materials LaboratoryDongguanGuangdong523000P. R. China
| | - Jie Li
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123P. R. China
| | - Lin Wang
- State Key Laboratory for Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐tian RoadShanghai200083P. R. China
| | - Kai Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123P. R. China
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10
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Chen M, Wang Y, Zhao Z. Monolithic Metamaterial-Integrated Graphene Terahertz Photodetector with Wavelength and Polarization Selectivity. ACS NANO 2022; 16:17263-17273. [PMID: 36129770 DOI: 10.1021/acsnano.2c07968] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The frequency spectra and polarization states of terahertz waves can convey significant information about physical interactions and material properties. Compact and miniaturized on-chip platforms for effective capturing of these quantities are being extensively investigated because of their promising potential for paramount applications of terahertz technology such as in situ sensing and characterization. Here, we present a metamaterial-graphene hybrid device that integrates the functions of photodetection, wavelength, and polarization selectivity into a monolithic architecture. Leveraging the ultrahigh design freedom of metamaterial optical properties and the electronically controllable hot-carrier-assisted photothermoelectric effect in graphene, our detector shows resonantly enhanced photoresponse at two specific target wavelengths with orthogonal polarizations. We demonstrate its versatile capabilities for spectrally selective and polarization resolved imaging on a single-chip platform that is free from advanced optical components. Our strategy is beneficial to the future development of multifunctional, compact, and low-cost terahertz sensors.
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Affiliation(s)
- Meng Chen
- National Engineering Research Center for Dangerous Articles and Explosives Detection Technologies, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Yingxin Wang
- National Engineering Research Center for Dangerous Articles and Explosives Detection Technologies, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Ziran Zhao
- National Engineering Research Center for Dangerous Articles and Explosives Detection Technologies, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
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11
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Deng S, Chen Y, Li Q, Sun J, Lei Z, Hu P, Liu ZH, He X, Ma R. Direct growth of SnS 2 nanowall photoanode for high responsivity self-powered photodetectors. NANOSCALE 2022; 14:14097-14105. [PMID: 36069814 DOI: 10.1039/d2nr03201e] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Tin sulfide (SnS2) has attracted growing attention due to its environmental friendliness, tunable band gap and potential applications for high-sensitivity photodetectors. However, the low responsivity and slow response speed severely hinder its further applications. In this work, SnS2 nanowalls have been successfully fabricated on FTO substrates by a facile hydrothermal approach. The prepared SnS2 nanowalls were used as a photoanode material for photoelectrochemical (PEC)-type photodetectors. The SnS2 based PEC-type photodetectors exhibit excellent photocurrent density (39.06 μA cm-2), responsivity (1460 μA W-1), long-term cycling stability and self-powered behavior. The responsivity of the detector is higher than that of most reported SnS2 based PEC-type photodetectors and even some SnS2 based photoconductive photodetectors. The high responsivity and self-powered behavior enable the extended potential applications of SnS2 in PEC-type photodetectors.
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Affiliation(s)
- Shunlan Deng
- Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Shaanxi 710119, China.
| | - Yi Chen
- Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Shaanxi 710119, China.
| | - Qi Li
- Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Shaanxi 710119, China.
| | - Jie Sun
- Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Shaanxi 710119, China.
| | - Zhibin Lei
- Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Shaanxi 710119, China.
| | - Peng Hu
- School of Physics, Northwest University, Shaanxi 710069, China
| | - Zong-Huai Liu
- Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Shaanxi 710119, China.
| | - Xuexia He
- Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Shaanxi 710119, China.
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 305-0044 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
| | - Renzhi Ma
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 305-0044 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
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Sun X, Sheng Y, Gao X, Liu Y, Ren F, Tan Y, Yang Z, Jia Y, Chen F. Self-Powered Lithium Niobate Thin-Film Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2203532. [PMID: 35843890 DOI: 10.1002/smll.202203532] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2022] [Revised: 06/28/2022] [Indexed: 06/15/2023]
Abstract
Thin-film lithium niobate platform, namely lithium-niobate-on-insulator (LNOI), brings new opportunities for integrated photonics, taking advantages from both outstanding crystalline properties and special structural features. The excellent properties of LNOI have triggered development of a variety of on-chip photonic devices for light generation and manipulation. However, as an indispensable component for photonic circuit with full functionalities, the thin-film photodetector lacks in portfolios of LNOI-based devices due to standing obstacles of low electrical conductivity and poor photoelectric conversion ability. Here, a self-powered broadband LNOI photodetector based on enhanced photovoltaic effect, benefitting from encapsulated plasmonic nanoparticles and doped silver ions, is reported. Maximum responsivity of 0.25 A W-1 and detectivity (1.56 × 1014 Jones) are achieved. First-principle calculations and electric-field simulation reveal intrinsic mechanisms and crucial roles of plasmonic nanoparticles and silver ions on photocurrent generation and collection. This work opens an avenue to develop high-performance on-chip LNOI photodetectors, offering a conceivable means toward multiple-functional photonic circuits.
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Affiliation(s)
- Xiaoli Sun
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Yan Sheng
- Department of Quantum Science & Technology, Research School of Physics, Australian National University, Canberra, 2601, Australia
| | - Xu Gao
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Yue Liu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Feng Ren
- Department of Physics, Center for Ion Beam Application and Center for Electron Microscopy, Wuhan University, Wuhan, 430072, P. R. China
| | - Yang Tan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Zaixing Yang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Yuechen Jia
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Feng Chen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
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Meng Q, Ding J, Peng B, Zhang B, Qian S, Su B, Zhang C. Terahertz modulation characteristics of three nanosols under external field control based on microfluidic chip. iScience 2022; 25:104898. [PMID: 36043051 PMCID: PMC9420507 DOI: 10.1016/j.isci.2022.104898] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/09/2022] [Revised: 07/08/2022] [Accepted: 08/03/2022] [Indexed: 11/26/2022] Open
Abstract
Recently, with the widespread application of metamaterials in the terahertz (THz) modulation field, solid-state THz modulators have made breakthrough progress; however, there are still challenges in preparing flexible THz modulators with wide modulation bandwidths. In this study, a THz microfluidic chip was fabricated using cycloolefin copolymers with high transmission (90%) of THz waves. The THz modulation characteristics of TiO2, Ag, and Fe3O4 nanosols under the control of an optical field, electric field, and magnetic field, respectively, were investigated. Under the action of photogenerated carrier migration, colloidal electrophoresis, and magneto-optical effect, all three nanosols exhibit broadband modulation performance in the frequency range of 0.3–2.4 THz, and the maximum modulation depth is 24%, 33%, and 54%, respectively. Contrary to previous studies based on traditional solid-state materials, this study innovatively explores the possibility of modulating THz waves with liquid materials, laying the foundation for the application of flexible liquid-film THz modulators. THz broadband amplitude modulation of liquid nanosols under external fields Using a microfluidic chip to reduce the absorption of THz waves by hydrogen bonds The experimental results lay a foundation for liquid-film THz modulators
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Wang L, An N, He X, Zhang X, Zhu A, Yao B, Zhang Y. Dynamic and Active THz Graphene Metamaterial Devices. NANOMATERIALS 2022; 12:nano12122097. [PMID: 35745433 PMCID: PMC9228136 DOI: 10.3390/nano12122097] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/29/2022] [Revised: 06/13/2022] [Accepted: 06/14/2022] [Indexed: 02/06/2023]
Abstract
In recent years, terahertz waves have attracted significant attention for their promising applications. Due to a broadband optical response, an ultra-fast relaxation time, a high nonlinear coefficient of graphene, and the flexible and controllable physical characteristics of its meta-structure, graphene metamaterial has been widely explored in interdisciplinary frontier research, especially in the technologically important terahertz (THz) frequency range. Here, graphene’s linear and nonlinear properties and typical applications of graphene metamaterial are reviewed. Specifically, the discussion focuses on applications in optically and electrically actuated terahertz amplitude, phase, and harmonic generation. The review concludes with a brief examination of potential prospects and trends in graphene metamaterial.
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Affiliation(s)
- Lan Wang
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China;
| | - Ning An
- Key Laboratory of Optical Fiber Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu 610054, China;
| | - Xusheng He
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (X.H.); (X.Z.); (A.Z.)
| | - Xinfeng Zhang
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (X.H.); (X.Z.); (A.Z.)
| | - Ao Zhu
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (X.H.); (X.Z.); (A.Z.)
| | - Baicheng Yao
- Key Laboratory of Optical Fiber Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu 610054, China;
- Correspondence: (B.Y.); (Y.Z.)
| | - Yaxin Zhang
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (X.H.); (X.Z.); (A.Z.)
- Correspondence: (B.Y.); (Y.Z.)
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Asgari M, Viti L, Zannier V, Sorba L, Vitiello MS. Semiconductor Nanowire Field-Effect Transistors as Sensitive Detectors in the Far-Infrared. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:3378. [PMID: 34947727 PMCID: PMC8705442 DOI: 10.3390/nano11123378] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/12/2021] [Revised: 12/09/2021] [Accepted: 12/09/2021] [Indexed: 11/17/2022]
Abstract
Engineering detection dynamics in nanoscale receivers that operate in the far infrared (frequencies in the range 0.1-10 THz) is a challenging task that, however, can open intriguing perspectives for targeted applications in quantum science, biomedicine, space science, tomography, security, process and quality control. Here, we exploited InAs nanowires (NWs) to engineer antenna-coupled THz photodetectors that operated as efficient bolometers or photo thermoelectric receivers at room temperature. We controlled the core detection mechanism by design, through the different architectures of an on-chip resonant antenna, or dynamically, by varying the NW carrier density through electrostatic gating. Noise equivalent powers as low as 670 pWHz-1/2 with 1 µs response time at 2.8 THz were reached.
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Affiliation(s)
| | | | | | | | - Miriam Serena Vitiello
- NEST, CNR-Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy; (M.A.); (L.V.); (V.Z.); (L.S.)
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