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Yu Y, Cao D, Yang L, Guan H, Liu Z, Liu C, Chen X, Shu H. Oxidation-induced graded bandgap narrowing in Two-dimensional tin sulfide for high-sensitivity broadband photodetection. J Colloid Interface Sci 2024; 679:430-440. [PMID: 39368162 DOI: 10.1016/j.jcis.2024.09.210] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/12/2024] [Revised: 09/26/2024] [Accepted: 09/26/2024] [Indexed: 10/07/2024]
Abstract
Two-dimensional (2D) layered group-IV monochalcogenides with large surface-to-volume ratio and high surface activity make that their structural and optoelectronic properties are sensitive to air oxidation. Here, we report the utilization of oxidation-induced gradient doping to modulate electronic structures and optoelectronic properties of 2D group-IV monochalcogenides by using SnS nanoplates grown by physical vapor deposition as a model system. By a precise control of oxidation time and temperature, the structural transition from SnS to SnSOx could be driven by the layer-by-layer oxygen doping and intercalation. The resulting SnSOx with a graded narrowing bandgap exhibits the enhanced optical absorption and photocurrent, leading to the fabricated SnSOx photodetector with remarkable photoresponsivity and fast response speed (<64 μs) at a broadband spectrum range of 520-1550 nm. The peak responsivity (7294 A/W) and detectivity (9.54 × 109 Jones) of SnSOx device are at least two orders of magnitude larger than those of SnS photodetector. Moreover, its photodetection performance can be competed with state-of-the-art of 2D materials-based photodetectors. This work suggests that the air oxidation could be utilized as an efficient strategy to engineer the electronic and optical properties of SnS and other 2D group-IV monochalcogenides for the development of high-performance broadband photodetectors.
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Affiliation(s)
- Yue Yu
- College of Science, China Jiliang University, 310018 Hangzhou, China
| | - Dan Cao
- College of Science, China Jiliang University, 310018 Hangzhou, China.
| | - Lingang Yang
- College of Science, China Jiliang University, 310018 Hangzhou, China
| | - Haibiao Guan
- College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China
| | - Zehao Liu
- College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China
| | - Changlong Liu
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advance Study, University of Chinese Academy of Sciences, 310024 Hangzhou, China.
| | - Xiaoshuang Chen
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advance Study, University of Chinese Academy of Sciences, 310024 Hangzhou, China; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 200083 Shanghai, China
| | - Haibo Shu
- College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 200083 Shanghai, China.
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Alam TI, Liu K, Hani SU, Ahmed S, Tsang YH. Advances in Group-10 Transition Metal Dichalcogenide PdSe 2-Based Photodetectors: Outlook and Perspectives. SENSORS (BASEL, SWITZERLAND) 2024; 24:6127. [PMID: 39338871 PMCID: PMC11435463 DOI: 10.3390/s24186127] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2024] [Revised: 09/11/2024] [Accepted: 09/19/2024] [Indexed: 09/30/2024]
Abstract
The recent advancements in low-dimensional material-based photodetectors have provided valuable insights into the fundamental properties of these materials, the design of their device architectures, and the strategic engineering approaches that have facilitated their remarkable progress. This review work consolidates and provides a comprehensive review of the recent progress in group-10 two-dimensional (2D) palladium diselenide (PdSe2)-based photodetectors. This work first offers a general overview of the various types of PdSe2 photodetectors, including their operating mechanisms and key performance metrics. A detailed examination is then conducted on the physical properties of 2D PdSe2 material and how these metrics, such as structural characteristics, optical anisotropy, carrier mobility, and bandgap, influence photodetector device performance and potential avenues for enhancement. Furthermore, the study delves into the current methods for synthesizing PdSe2 material and constructing the corresponding photodetector devices. The documented device performances and application prospects are thoroughly discussed. Finally, this review speculates on the existing trends and future research opportunities in the field of 2D PdSe2 photodetectors. Potential directions for continued advancement of these optoelectronic devices are proposed and forecasted.
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Affiliation(s)
- Tawsif Ibne Alam
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen 518057, China
- Department of Applied Physics, Materials Research Center, Photonics Research Institute and Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Kunxuan Liu
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen 518057, China
- Department of Applied Physics, Materials Research Center, Photonics Research Institute and Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Sumaiya Umme Hani
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen 518057, China
- Department of Applied Physics, Materials Research Center, Photonics Research Institute and Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Safayet Ahmed
- Department of Physics, Oregon State University, Corvallis, OR 97331, USA
| | - Yuen Hong Tsang
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen 518057, China
- Department of Applied Physics, Materials Research Center, Photonics Research Institute and Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
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Wang P, Li Z, Xia X, Zhang J, Lan Y, Zhu L, Ke Q, Mu H, Lin S. Anisotropic Te/PdSe 2 Van Der Waals Heterojunction for Self-Powered Broadband and Polarization-Sensitive Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2401216. [PMID: 38593322 DOI: 10.1002/smll.202401216] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2024] [Revised: 03/16/2024] [Indexed: 04/11/2024]
Abstract
Polarization-sensitive broadband optoelectronic detection is crucial for future sensing, imaging, and communication technologies. Narrow bandgap 2D materials, such as Te and PdSe2, show promise for these applications, yet their polarization performance is limited by inherent structural anisotropies. In this work, a self-powered, broadband photodetector utilizing a Te/PdSe2 van der Waals (vdWs) heterojunction, with orientations meticulously tailored is introduced through polarized Raman optical spectra and tensor calculations to enhance linear polarization sensitivity. The device exhibits anisotropy ratios of 1.48 at 405 nm, 3.56 at 1550 nm, and 1.62 at 4 µm, surpassing previously-reported photodetectors based on pristine Te and PdSe2. Additionally, it exhibits high responsivity (617 mA W-1 at 1550 nm), specific detectivity (5.27 × 1010 Jones), fast response (≈4.5 µs), and an extended spectral range beyond 4 µm. The findings highlight the significance of orientation-engineered heterostructures in enhancing polarization-sensitive photodetectors and advancing optoelectronic technology.
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Affiliation(s)
- Pu Wang
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Zhao Li
- Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun, 130012, China
| | - Xue Xia
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Jingni Zhang
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- School of Automation and Information Engineering, Xi'an University of Technology, Xi'an, 710048, P. R. China
| | - Yingying Lan
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Lu Zhu
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, China
| | - Qingqing Ke
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, China
| | - Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
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Li Y, Yu W, Zhang K, Cui N, Yun T, Xia X, Jiang Y, Zhang G, Mu H, Lin S. Two-dimensional topological semimetals: an emerging candidate for terahertz detectors and on-chip integration. MATERIALS HORIZONS 2024; 11:2572-2602. [PMID: 38482962 DOI: 10.1039/d3mh02250a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2024]
Abstract
The importance of terahertz (THz) detection lies in its ability to provide detailed information in a non-destructive manner, making it a valuable tool across various domains including spectroscopy, communication, and security. The ongoing development of THz detectors aims to enhance their sensitivity, resolution and integration into compact and portable devices such as handheld scanners or integrated communication chips. Generally, two-dimensional (2D) materials are considered potential candidates for device miniaturization but detecting THz radiation using 2D semiconductors is generally difficult due to the ultra-small photon energy. However, this challenge is being addressed by the advent of topological semimetals (TSM) with zero-bandgap characteristics. These semimetals offer low-energy excitations in proximity to the Dirac point, which is particularly important for applications requiring a broad detection range. Their distinctive band structures with linear energy-momentum dispersion near the Fermi level also lead to high electron mobility and low effective mass. The presence of topologically protected dissipationless conducting channels and self-powered response provides a basis for low-energy integration. In order to establish paradigms for semimetal-based THz detectors, this review initially offers an analytical summary of THz detection principles. Then, the review demonstrates the distinct design of devices, the excellent performance derived from the topological surface state and unique band structures in TSM. Finally, we outline the prospective avenues for on-chip integration of TSM-based THz detectors. We believe this review can promote further research on the new generation of THz detectors and facilitate advancements in THz imaging, spectroscopy, and communication systems.
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Affiliation(s)
- Yun Li
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Kai Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- MOE Key Laboratory of Laser Life Science &Guangdong Provincial Key Laboratory of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou 510631, China
| | - Nan Cui
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Tinghe Yun
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Xue Xia
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Yan Jiang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
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5
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Mu H, Zhuang R, Cui N, Cai S, Yu W, Yuan J, Zhang J, Liu H, Mei L, He X, Mei Z, Zhang G, Bao Q, Lin S. Alternating BiI 3-BiI van der Waals Photodetector with Low Dark Current and High-Performance Photodetection. ACS NANO 2023; 17:21317-21327. [PMID: 37862706 DOI: 10.1021/acsnano.3c05849] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/22/2023]
Abstract
The emerging two-dimensional (2D) van der Waals (vdW) materials and their heterostructures hold great promise for optoelectronics and photonic applications beyond strictly lattice-matching constraints and grade interfaces. However, previous photodetectors and optoelectronic devices rely on relatively simple vdW heterostructures with one or two blocks. The realization of high-order heterostructures has been exponentially challenging due to conventional layer-by-layer arduous restacking or sequential synthesis. In this study, we present an approach involving the direct exfoliation of high-quality BiI3-BiI heterostructure nanosheets with alternating blocks, derived from solution-grown binary heterocrystals. These heterostructure-based photodetectors offer several notable advantages. Leveraging the "active layer energetics" of BiI layers and the establishment of a significant depletion region, our photodetector demonstrates a significant reduction in dark current compared with pure BiI3 devices. Specifically, the photodetector achieves an extraordinarily low dark current (<9.2 × 10-14 A at 5 V bias voltage), an impressive detectivity of 8.8 × 1012 Jones at 638 nm, and a rapid response time of 3.82 μs. These characteristics surpass the performance of other metal-semiconductor-metal (MSM) photodetectors based on various 2D materials and structures at visible wavelengths. Moreover, our heterostructure exhibits a broad-band photoresponse, covering the visible, near-infrared (NIR)-I, and NIR-II regions. In addition to these promising results, our heterostructure also demonstrated the potential for flexible and imaging applications. Overall, our study highlights the potential of alternating vdW heterostructures for future optoelectronics with low power consumption, fast response, and flexible requirements.
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Affiliation(s)
- Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Renzhong Zhuang
- Fujian Provincial Key Laboratory of Welding Quality Intelligent Evaluation, Longyan University, Longyan 364012, P. R. China
| | - Nan Cui
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Songhua Cai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hunghom, Kowloon 999077, Hong Kong, P. R. China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Jian Yuan
- School of Physics and Electronic Information, Huaibei Normal University, Huaibei 235000, P. R. China
| | - Jingni Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Hao Liu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Luyao Mei
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Xiaoyue He
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Zengxia Mei
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
- Institute of Physics, Chinese Academy of Science, Beijing 100190, P. R. China
| | - Qiaoliang Bao
- Institute of Energy Materials Science (IEMS), University of Shanghai for Science and Technology, Shanghai 200093, P. R. China
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
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6
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Zeng L, Han W, Ren X, Li X, Wu D, Liu S, Wang H, Lau SP, Tsang YH, Shan CX, Jie J. Uncooled Mid-Infrared Sensing Enabled by Chip-Integrated Low-Temperature-Grown 2D PdTe 2 Dirac Semimetal. NANO LETTERS 2023; 23:8241-8248. [PMID: 37594857 DOI: 10.1021/acs.nanolett.3c02396] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/20/2023]
Abstract
Next-generation mid-infrared (MIR) imaging chips demand free-cooling capability and high-level integration. The rising two-dimensional (2D) semimetals with excellent infrared (IR) photoresponses are compliant with these requirements. However, challenges remain in scalable growth and substrate-dependence for on-chip integration. Here, we demonstrate the inch-level 2D palladium ditelluride (PdTe2) Dirac semimetal using a low-temperature self-stitched epitaxy (SSE) approach. The low formation energy between two precursors facilitates low-temperature multiple-point nucleation (∼300 °C), growing up, and merging, resulting in self-stitching of PdTe2 domains into a continuous film, which is highly compatible with back-end-of-line (BEOL) technology. The uncooled on-chip PdTe2/Si Schottky junction-based photodetector exhibits an ultrabroadband photoresponse of up to 10.6 μm with a large specific detectivity. Furthermore, the highly integrated device array demonstrates high-resolution room-temperature imaging capability, and the device can serve as an optical data receiver for IR optical communication. This study paves the way toward low-temperature growth of 2D semimetals for uncooled MIR sensing.
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Affiliation(s)
- Longhui Zeng
- Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California 92093, United States
| | - Wei Han
- Hubei Yangtze Memory Laboratories, Wuhan, Hubei 430205, P. R. China
| | - Xiaoyan Ren
- School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education Zhengzhou University, Zhengzhou, Henan 450052, P. R. China
| | - Xue Li
- School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education Zhengzhou University, Zhengzhou, Henan 450052, P. R. China
| | - Di Wu
- School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education Zhengzhou University, Zhengzhou, Henan 450052, P. R. China
| | - Shujuan Liu
- Hubei Yangtze Memory Laboratories, Wuhan, Hubei 430205, P. R. China
| | - Hao Wang
- Hubei Yangtze Memory Laboratories, Wuhan, Hubei 430205, P. R. China
| | - Shu Ping Lau
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom Kowloon, Hong Kong 999077, P. R. China
| | - Yuen Hong Tsang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom Kowloon, Hong Kong 999077, P. R. China
| | - Chong-Xin Shan
- School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education Zhengzhou University, Zhengzhou, Henan 450052, P. R. China
| | - Jiansheng Jie
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa 999078, Macau, China
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Sun X, Liu Y, Shi J, Si C, Du J, Liu X, Jiang C, Yang S. Controllable Synthesis of 2H-1T' Mo x Re (1- x ) S 2 Lateral Heterostructures and Their Tunable Optoelectronic Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304171. [PMID: 37278555 DOI: 10.1002/adma.202304171] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Revised: 05/24/2023] [Indexed: 06/07/2023]
Abstract
Constructing heterostructures and doping are valid ways to improve the optoelectronic properties of transition metal dichalcogenides (TMDs) and optimize the performance of TMDs-based photodetectors. Compared with transfer techniques, chemical vapor deposition (CVD) has higher efficiency in preparing heterostructures. As for the one-step CVD growth of heterostructures, cross-contamination between the two materials may occur during the growth process, which may provide the possibility of one-step simultaneous realization of controllable doping and formation of alloy-based heterostructures by finely tuning the growth dynamics. Here, 2H-1T' Mox Re(1- x ) S2 alloy-to-alloy lateral heterostructures are synthesized through this one-step CVD growth method, utilizing the cross-contamination and different growth temperatures of the two alloys. Due to the doping of a small amount of Re atoms in 2H MoS2 , 2H Mox Re(1- x ) S2 has a high response rejection ratio in the solar-blind ultraviolet (SBUV) region and exhibits a positive photoconductive (PPC) effect. While the 1T' Mox Re(1- x ) S2 formed by heavily doping Mo atoms into 1T' ReS2 will produce a negative photoconductivity (NPC) effect under UV laser irradiation. The optoelectronic property of 2H-1T' Mox Re(1- x ) S2 -based heterostructures can be modulated by gate voltage. These findings are expected to expand the functionality of traditional optoelectronic devices and have potential applications in optoelectronic logic devices.
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Affiliation(s)
- Xiaona Sun
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Yang Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Jianwei Shi
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Chen Si
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Jiantao Du
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Chengbao Jiang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Shengxue Yang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
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8
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Aftab S, Hegazy HH. Emerging Trends in 2D TMDs Photodetectors and Piezo-Phototronic Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205778. [PMID: 36732842 DOI: 10.1002/smll.202205778] [Citation(s) in RCA: 13] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2022] [Revised: 01/20/2023] [Indexed: 05/04/2023]
Abstract
The piezo-phototronic effect shows promise with regards to improving the performance of 2D semiconductor-based flexible optoelectronics, which will potentially open up new opportunities in the electronics field. Mechanical exfoliation and chemical vapor deposition (CVD) influence the piezo-phototronic effect on a transparent, ultrasensitive, and flexible van der Waals (vdW) heterostructure, which allows the use of intrinsic semiconductors, such as 2D transition metal dichalcogenides (TMD). The latest and most promising 2D TMD-based photodetectors and piezo-phototronic devices are discussed in this review article. As a result, it is possible to make flexible piezo-phototronic photodetectors, self-powered sensors, and higher strain tolerance wearable and implantable electronics for health monitoring and generation of piezoelectricity using just a single semiconductor or vdW heterostructures of various nanomaterials. A comparison is also made between the functionality and distinctive properties of 2D flexible electronic devices with a range of applications made from 2D TMDs materials. The current state of the research about 2D TMDs can be applied in a variety of ways in order to aid in the development of new types of nanoscale optoelectronic devices. Last, it summarizes the problems that are currently being faced, along with potential solutions and future prospects.
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Affiliation(s)
- Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul, 05006, South Korea
| | - Hosameldin Helmy Hegazy
- Department of Physics, Faculty of Science, King Khalid University, Abha, P.O. Box 9004, Saudi Arabia
- 2Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha, 61413, P. O. Box 9004, Saudi Arabia
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9
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Lu J, He Y, Ma C, Ye Q, Yi H, Zheng Z, Yao J, Yang G. Ultrabroadband Imaging Based on Wafer-Scale Tellurene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211562. [PMID: 36893428 DOI: 10.1002/adma.202211562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2022] [Revised: 03/02/2023] [Indexed: 05/19/2023]
Abstract
High-resolution imaging is at the heart of the revolutionary breakthroughs of intelligent technologies, and it is established as an important approach toward high-sensitivity information extraction/storage. However, due to the incompatibility between non-silicon optoelectronic materials and traditional integrated circuits as well as the lack of competent photosensitive semiconductors in the infrared region, the development of ultrabroadband imaging is severely impeded. Herein, the monolithic integration of wafer-scale tellurene photoelectric functional units by exploiting room-temperature pulsed-laser deposition is realized. Taking advantage of the surface plasmon polaritons of tellurene, which results in the thermal perturbation promoted exciton separation, in situ formation of out-of-plane homojunction and negative expansion promoted carrier transport, as well as the band bending promoted electron-hole pair separation enabled by the unique interconnected nanostrip morphology, the tellurene photodetectors demonstrate wide-spectrum photoresponse from 370.6 to 2240 nm and unprecedented photosensitivity with the optimized responsivity, external quantum efficiency and detectivity of 2.7 × 107 A W-1 , 8.2 × 109 % and 4.5 × 1015 Jones. An ultrabroadband imager is demonstrated and high-resolution photoelectric imaging is realized. The proof-of-concept wafer-scale tellurene-based ultrabroadband photoelectric imaging system depicts a fascinating paradigm for the development of an advanced 2D imaging platform toward next-generation intelligent equipment.
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Affiliation(s)
- Jianting Lu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Yan He
- College of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong, 525000, P. R. China
| | - Churong Ma
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou, 511443, P. R. China
| | - Qiaojue Ye
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Huaxin Yi
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
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10
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Titova E, Mylnikov D, Kashchenko M, Safonov I, Zhukov S, Dzhikirba K, Novoselov KS, Bandurin DA, Alymov G, Svintsov D. Ultralow-noise Terahertz Detection by p-n Junctions in Gapped Bilayer Graphene. ACS NANO 2023; 17:8223-8232. [PMID: 37094175 DOI: 10.1021/acsnano.2c12285] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Graphene shows strong promise for the detection of terahertz (THz) radiation due to its high carrier mobility, compatibility with on-chip waveguides and transistors, and small heat capacitance. At the same time, weak reaction of graphene's physical properties on the detected radiation can be traced down to the absence of a band gap. Here, we study the effect of electrically induced band gap on THz detection in graphene bilayer with split-gate p-n junction. We show that gap induction leads to a simultaneous increase in current and voltage responsivities. At operating temperatures of ∼25 K, the responsivity at a 20 meV band gap is from 3 to 20 times larger than that in the gapless state. The maximum voltage responsivity of our devices at 0.13 THz illumination exceeds 50 kV/W, while the noise equivalent power falls down to 36 fW/Hz1/2.
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Affiliation(s)
- Elena Titova
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russian Federation
- Programmable Functional Materials Lab, Brain and Consciousness Research Center, Moscow 121205, Russia
| | - Dmitry Mylnikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russian Federation
| | - Mikhail Kashchenko
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russian Federation
- Programmable Functional Materials Lab, Brain and Consciousness Research Center, Moscow 121205, Russia
| | - Ilya Safonov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russian Federation
- Programmable Functional Materials Lab, Brain and Consciousness Research Center, Moscow 121205, Russia
| | - Sergey Zhukov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russian Federation
| | - Kirill Dzhikirba
- Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka 142432, Russian Federation
| | - Kostya S Novoselov
- Programmable Functional Materials Lab, Brain and Consciousness Research Center, Moscow 121205, Russia
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117575, Singapore
| | - Denis A Bandurin
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Georgy Alymov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russian Federation
| | - Dmitry Svintsov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russian Federation
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11
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Ahmad W, Wu J, Zhuang Q, Neogi A, Wang Z. Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207641. [PMID: 36658722 DOI: 10.1002/smll.202207641] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Revised: 01/01/2023] [Indexed: 06/17/2023]
Abstract
Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.
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Affiliation(s)
- Waqas Ahmad
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Qiandong Zhuang
- Physics Department, Lancaster University, Lancaster, LA14YB, UK
| | - Arup Neogi
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
- Institute for Advanced Study, Chengdu University, Chengdu, 610106, China
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12
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Hong L, Wang L, Cai M, Yao Y, Guo X, Zhu Y. Sensitive Room-Temperature Graphene Photothermoelectric Terahertz Detector Based on Asymmetric Antenna Coupling Structure. SENSORS (BASEL, SWITZERLAND) 2023; 23:3249. [PMID: 36991960 PMCID: PMC10058478 DOI: 10.3390/s23063249] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/18/2023] [Revised: 03/07/2023] [Accepted: 03/16/2023] [Indexed: 06/19/2023]
Abstract
A highly sensitive room-temperature graphene photothermoelectric terahertz detector, with an efficient optical coupling structure of asymmetric logarithmic antenna, was fabricated by planar micro-nano processing technology and two-dimensional material transfer techniques. The designed logarithmic antenna acts as an optical coupling structure to effectively localize the incident terahertz waves at the source end, thus forming a temperature gradient in the device channel and inducing the thermoelectric terahertz response. At zero bias, the device has a high photoresponsivity of 1.54 A/W, a noise equivalent power of 19.8 pW/Hz1/2, and a response time of 900 ns at 105 GHz. Through qualitative analysis of the response mechanism of graphene PTE devices, we find that the electrode-induced doping of graphene channel near the metal-graphene contacts play a key role in the terahertz PTE response. This work provides an effective way to realize high sensitivity terahertz detectors at room temperature.
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Affiliation(s)
- Liang Hong
- Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Lanxia Wang
- Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Miao Cai
- Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Yifan Yao
- Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Xuguang Guo
- Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Yiming Zhu
- Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China
- Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 200092, China
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13
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Verma S, Yadav R, Pandey A, Kaur M, Husale S. Investigating active area dependent high performing photoresponse through thin films of Weyl Semimetal WTe 2. Sci Rep 2023; 13:197. [PMID: 36604468 PMCID: PMC9814664 DOI: 10.1038/s41598-022-27200-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/07/2022] [Accepted: 12/28/2022] [Indexed: 01/06/2023] Open
Abstract
WTe2 is one of the wonder layered materials, displays interesting overlapping of electron-hole pairs, opening of the surface bandgap, anisotropy in its crystal structure and very much sought appealing material for room temperature broadband photodection applications. Here we report the photoresponse of WTe2 thin films and microchannel devices fabricated on silicon nitride substrates. A clear sharp rise in photocurrent observed under the illumination of visible (532 nm) and NIR wavelengths (1064 nm). The observed phoresponse is very convincing and repetitive for ON /OFF cycles of laser light illumination. The channel length dependence of photocurrent is noticed for few hundred nanometers to micrometers. The photocurrent, rise & decay times, responsivity and detectivity are studied using different channel lengths. Strikingly microchannel gives few orders of greater responsivity compared to larger active area investigated here. The responsivity and detectivity are observed as large as 29 A/W and 3.6 × 108 Jones respectively. The high performing photodetection properties indicate that WTe2 can be used as a broad band material for future optoelectronic applications.
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Affiliation(s)
- Sahil Verma
- grid.469887.c0000 0004 7744 2771Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002 India ,grid.418099.dNational Physical Laboratory, Council of Scientific and Industrial Research, Dr. K S Krishnan Road, New Delhi, 110012 India
| | - Reena Yadav
- grid.469887.c0000 0004 7744 2771Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002 India ,grid.418099.dNational Physical Laboratory, Council of Scientific and Industrial Research, Dr. K S Krishnan Road, New Delhi, 110012 India
| | - Animesh Pandey
- grid.469887.c0000 0004 7744 2771Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002 India ,grid.418099.dNational Physical Laboratory, Council of Scientific and Industrial Research, Dr. K S Krishnan Road, New Delhi, 110012 India
| | - Mandeep Kaur
- grid.418099.dNational Physical Laboratory, Council of Scientific and Industrial Research, Dr. K S Krishnan Road, New Delhi, 110012 India
| | - Sudhir Husale
- grid.469887.c0000 0004 7744 2771Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002 India ,grid.418099.dNational Physical Laboratory, Council of Scientific and Industrial Research, Dr. K S Krishnan Road, New Delhi, 110012 India
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14
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Zhang K, Hu Z, Zhang L, Chen Y, Wang D, Jiang M, D'Olimpio G, Han L, Yao C, Chen Z, Xing H, Kuo CN, Lue CS, Vobornik I, Wang SW, Politano A, Hu W, Wang L, Chen X, Lu W. Ultrasensitive Self-Driven Terahertz Photodetectors Based on Low-Energy Type-II Dirac Fermions and Related Van der Waals Heterojunctions. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205329. [PMID: 36344449 DOI: 10.1002/smll.202205329] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Revised: 10/08/2022] [Indexed: 06/16/2023]
Abstract
The exotic electronic properties of topological semimetals (TSs) have opened new pathways for innovative photonic and optoelectronic devices, especially in the highly pursuit terahertz (THz) band. However, in most cases Dirac fermions lay far above or below the Fermi level, thus hindering their successful exploitation for the low-energy photonics. Here, low-energy type-II Dirac fermions in kitkaite (NiTeSe) for ultrasensitive THz detection through metal-topological semimetal-metal heterostructures are exploited. Furthermore, a heterostructure combining two Dirac materials, namely, graphene and NiTeSe, is implemented for a novel photodetector exhibiting a responsivity as high as 1.22 A W-1 , with a response time of 0.6 µs, a noise-equivalent power of 18 pW Hz-0.5 , with outstanding stability in the ambient conditions. This work brings to fruition of Dirac fermiology in THz technology, enabling self-powered, low-power, room-temperature, and ultrafast THz detection.
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Affiliation(s)
- Kaixuan Zhang
- Department of Optoelectronic Science and Engineering, Donghua University, Shanghai, 201620, China
| | - Zhen Hu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
| | - Libo Zhang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Yulu Chen
- The 50th Research Institute of China Electronics Technology Group Corporation, Shanghai, 200331, China
| | - Dong Wang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
| | - Mengjie Jiang
- Department of Optoelectronic Science and Engineering, Donghua University, Shanghai, 201620, China
| | - Gianluca D'Olimpio
- Department of Physical and Chemical Sciences, University of L'Aquila, via Vetoio, L'Aquila, AQ, 67100, Italy
| | - Li Han
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Chenyu Yao
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
| | - Zhiqingzi Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
| | - Huaizhong Xing
- Department of Optoelectronic Science and Engineering, Donghua University, Shanghai, 201620, China
| | - Chia-Nung Kuo
- Department of Physics, Cheng Kung University, 1 Ta-Hsueh Road, Taiwan, 70101, China
| | - Chin Shan Lue
- Department of Physics, Cheng Kung University, 1 Ta-Hsueh Road, Taiwan, 70101, China
| | - Ivana Vobornik
- CNR-IOM, Area Science Park, Strada Statale 14 km 163.5, Trieste, I-34149, Italy
| | - Shao-Wei Wang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
| | - Antonio Politano
- Department of Physical and Chemical Sciences, University of L'Aquila, via Vetoio, L'Aquila, AQ, 67100, Italy
- Department of Physics, Cheng Kung University, 1 Ta-Hsueh Road, Taiwan, 70101, China
| | - Weida Hu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
| | - Lin Wang
- Department of Optoelectronic Science and Engineering, Donghua University, Shanghai, 201620, China
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
| | - Xiaoshuang Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
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15
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Dong Z, Guo W, Zhang L, Zhang Y, Chen J, Huang L, Chen C, Yang L, Ren Z, Zhang J, Yu W, Li J, Wang L, Zhang K. Excitonic Insulator Enabled Ultrasensitive Terahertz Photodetection with Efficient Low-Energy Photon Harvesting. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2204580. [PMID: 36354190 PMCID: PMC9798984 DOI: 10.1002/advs.202204580] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2022] [Revised: 09/29/2022] [Indexed: 06/11/2023]
Abstract
Despite the interest toward the terahertz (THz) rapidly increasing, the high-efficient detection of THz photon is not widely available due to the low photoelectric conversion efficiency at this low-energy photon regime. Excitonic insulator (EI) states in emerging materials with anomalous optical transitions and renormalized valence band dispersions render their nontrivial photoresponse, which offers the prospect of harnessing the novel EI properties for the THz detection. Here, an EI-based photodetector is developed for efficient photoelectric conversion in the THz band. High-quality EI material Ta2 NiSe5 is synthesized and the existence of the EI state at room temperature is confirmed. The THz scanning near-field optical microscopy experimentally reveals the strong light-matter interaction in the THz band of EI state in the Ta2 NiSe5 . Benefiting from the strong light-matter interaction, the Ta2 NiSe5 -based photodetectors exhibit superior THz detection performances with a detection sensitivity of ≈42 pW Hz-1/2 and a response time of ≈1.1 µs at 0.1 THz at room temperature. This study provides a new avenue for realizing novel high-performance THz photodetectors by exploiting the emerging EI materials.
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Affiliation(s)
- Zhuo Dong
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123P. R. China
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaJinzhai Road 96HefeiAnhui230026P. R. China
| | - Wanlong Guo
- State Key Laboratory for Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐tian RoadShanghai200083P. R. China
| | - Libo Zhang
- State Key Laboratory for Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐tian RoadShanghai200083P. R. China
| | - Yan Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123P. R. China
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaJinzhai Road 96HefeiAnhui230026P. R. China
| | - Jie Chen
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123P. R. China
| | - Luyi Huang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123P. R. China
| | - Cheng Chen
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123P. R. China
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaJinzhai Road 96HefeiAnhui230026P. R. China
| | - Liu Yang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123P. R. China
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaJinzhai Road 96HefeiAnhui230026P. R. China
| | - Zeqian Ren
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123P. R. China
| | - Junrong Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123P. R. China
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaJinzhai Road 96HefeiAnhui230026P. R. China
| | - Wenzhi Yu
- Songshan Lake Materials LaboratoryDongguanGuangdong523000P. R. China
| | - Jie Li
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123P. R. China
| | - Lin Wang
- State Key Laboratory for Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐tian RoadShanghai200083P. R. China
| | - Kai Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123P. R. China
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16
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Luo Z, Yang M, Wu D, Huang Z, Gao W, Zhang M, Zhou Y, Zhao Y, Zheng Z, Li J. Rational Design of WSe 2 /WS 2 /WSe 2 Dual Junction Phototransistor Incorporating High Responsivity and Detectivity. SMALL METHODS 2022; 6:e2200583. [PMID: 35871503 DOI: 10.1002/smtd.202200583] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2022] [Revised: 06/24/2022] [Indexed: 06/15/2023]
Abstract
The excellent semiconducting properties and ultrathin morphological characteristics allow van der Waals (vdW) heterostructures based on 2D materials to be promising channel materials for the next-generation optoelectronic devices, especially in photodetectors. Although various 2D heterostructure-based photodetectors have been developed, the unavoidable trade-off between responsivity and detectivity remains a critical issue for these devices. Here, an ingenious phototransistor based on WSe2 /WS2 /WSe2 dual-vdW heterostructures is constructed, performing both high responsivity and detectivity. In the charge neutrality point (gate voltage of -15 V and bias voltage of 1 V), this device demonstrates a pronounced photosensitivity, accompanying with high detectivity of 1.9 × 1014 Jones, high responsivity of 35.4 A W-1 , and fast rise/fall time of 3.2/2.5 ms at 405 nm with power density of 60 µW cm-2 . Density functional theory calculations, energy band profiles, and optoelectronic characteristics jointly verify that the high performance is ascribed to the distinctive device design, which not only facilitates the separation of photogenerated carriers but also produces a strong photogating effect. As a feasible application, an automotive radar system is demonstrated, proving that the device has considerable potential for application in vehicle intelligent assisted driving.
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Affiliation(s)
- Zhongtong Luo
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Dongsi Wu
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Zihao Huang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Wei Gao
- Institute of Semiconductors, South China Normal University, Guangzhou, Guangdong, 510631, P. R. China
| | - Menglong Zhang
- Institute of Semiconductors, South China Normal University, Guangzhou, Guangdong, 510631, P. R. China
| | - Yuchen Zhou
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jingbo Li
- Institute of Semiconductors, South China Normal University, Guangzhou, Guangdong, 510631, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, Guangdong, 510631, P. R. China
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17
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Wu J, Ma H, Zhong C, Wei M, Sun C, Ye Y, Xu Y, Tang B, Luo Y, Sun B, Jian J, Dai H, Lin H, Li L. Waveguide-Integrated PdSe 2 Photodetector over a Broad Infrared Wavelength Range. NANO LETTERS 2022; 22:6816-6824. [PMID: 35787028 DOI: 10.1021/acs.nanolett.2c02099] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Hybrid integration of van der Waals materials on a photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation integrated photonic circuits, but developing waveguide-integrated photodetectors based on conventionally investigated transition metal dichalcogenide materials at the full optical telecommunication bands and mid-infrared range is still a challenge. Here, we integrate PdSe2 with silicon waveguide for on-chip photodetection with a high responsivity from 1260 to 1565 nm, a low noise-equivalent power of 4.0 pW·Hz-0.5, a 3-dB bandwidth of 1.5 GHz, and a measured data rate of 2.5 Gbit·s-1. The achieved PdSe2 photodetectors provide new insights to explore the integration of novel van der Waals materials with integrated photonic platforms and exhibit great potential for diverse applications over a broad infrared range of wavelengths, such as on-chip sensing and spectroscopy.
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Affiliation(s)
- Jianghong Wu
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| | - Hui Ma
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China
| | - Chuyu Zhong
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China
| | - Maoliang Wei
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China
| | - Chunlei Sun
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| | - Yuting Ye
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| | - Yan Xu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| | - Bo Tang
- Institute of Microelectronics, Chinese Academic Society, Beijing 100029, China
| | - Ye Luo
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| | - Boshu Sun
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China
| | - Jialing Jian
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| | - Hao Dai
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China
| | - Hongtao Lin
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China
| | - Lan Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
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Meng Q, Ding J, Peng B, Zhang B, Qian S, Su B, Zhang C. Terahertz modulation characteristics of three nanosols under external field control based on microfluidic chip. iScience 2022; 25:104898. [PMID: 36043051 PMCID: PMC9420507 DOI: 10.1016/j.isci.2022.104898] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/09/2022] [Revised: 07/08/2022] [Accepted: 08/03/2022] [Indexed: 11/26/2022] Open
Abstract
Recently, with the widespread application of metamaterials in the terahertz (THz) modulation field, solid-state THz modulators have made breakthrough progress; however, there are still challenges in preparing flexible THz modulators with wide modulation bandwidths. In this study, a THz microfluidic chip was fabricated using cycloolefin copolymers with high transmission (90%) of THz waves. The THz modulation characteristics of TiO2, Ag, and Fe3O4 nanosols under the control of an optical field, electric field, and magnetic field, respectively, were investigated. Under the action of photogenerated carrier migration, colloidal electrophoresis, and magneto-optical effect, all three nanosols exhibit broadband modulation performance in the frequency range of 0.3–2.4 THz, and the maximum modulation depth is 24%, 33%, and 54%, respectively. Contrary to previous studies based on traditional solid-state materials, this study innovatively explores the possibility of modulating THz waves with liquid materials, laying the foundation for the application of flexible liquid-film THz modulators. THz broadband amplitude modulation of liquid nanosols under external fields Using a microfluidic chip to reduce the absorption of THz waves by hydrogen bonds The experimental results lay a foundation for liquid-film THz modulators
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