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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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2
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Elaggoune W, Ersan F, Meddour A. Computational design of the novel Fe-doped single-layer SrS: structural, electro-magnetic, and optical properties. RSC Adv 2024; 14:20668-20682. [PMID: 38952946 PMCID: PMC11215402 DOI: 10.1039/d4ra04352a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/14/2024] [Accepted: 06/14/2024] [Indexed: 07/03/2024] Open
Abstract
The search for novel intrinsic two-dimensional (2D) magnetic materials is crucial to understand the fundamentals of 2D magnetism and realize next-generation magneto-electric and magneto-optical systems. Using the rigorous framework of spin-polarized density functional theory (SPDFT)-based ab initio calculations, this investigation systematically investigates the effects of a stepwise change in the Fe composition (x) on the structural, electro-magnetic and optical properties of the ordered SrS based single-layer alloys, with x encompassing values from 0 to 1. Our comprehensive analysis revealed that the calculated formation energies, cohesive energies, phonon dispersions, molecular dynamics, and elastic constants of both bare SrS and FeS monolayers indicate their thermodynamic, dynamic, thermal, and mechanical stability in hexagonal and square structures, respectively. Significantly, the introduction of magnetic Fe dopants into the non-magnetic SrS semiconductor enabled the creation of an intrinsic magnetic (FM) state characterized by spin-polarized charge carriers at the Fermi level (E F). As doping increases, the electronic structure shows a noticeable dependence on the chemical composition. It is noteworthy that the systems doped with 0.750 and 1 Fe exhibit metallic-magnetic and metallic non-magnetic properties, respectively, and the rest are half-semiconductors (HSC) according to the GGA approximation. Conversely, the HSE approach shows a transition to HSC for a doping level of 0.750, while others maintain the same behavior. The study of the optical properties shows improvements compared to the bare SrS monolayer through the incorporation of Fe dopants. The bare SrS has light absorption in the ultraviolet region, while the absorption band edges for HSC compounds change from the infrared to visible regions. This study proposes a practical method to tune the properties of the SrS single-layer by selectively adjusting the dopant concentration. Such control is promising for applications in spintronics and optical based nanodevices.
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Affiliation(s)
- Warda Elaggoune
- Laboratoire de Physique des Matériaux, Université 8 Mai 1945 BP 401 Guelma, 24000 Guelma Algeria
| | - Fatih Ersan
- Department of Physics, Faculty of Science, Aydin Adnan Menderes University Aydin 09010 Turkiye
| | - Athmane Meddour
- Laboratoire de Physique des Matériaux, Université 8 Mai 1945 BP 401 Guelma, 24000 Guelma Algeria
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Jiang J, Wu G, Sun M, Liu Y, Yang Y, Du A, Dai L, Mao X, Qin Q. Cu-Mo Dual Sites in Cu-Doped MoSe 2 for Enhanced Electrosynthesis of Urea. ACS NANO 2024; 18:13745-13754. [PMID: 38739489 DOI: 10.1021/acsnano.4c01821] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
The quest for sustainable urea production has directed attention toward electrocatalytic methods that bypass the energy-intensive traditional Haber-Bosch process. This study introduces an approach to urea synthesis through the coreduction of CO2 and NO3- using copper-doped molybdenum diselenide (Cu-MoSe2) with Cu-Mo dual sites as electrocatalysts. The electrocatalytic activity of the Cu-MoSe2 electrode is characterized by a urea yield rate of 1235 μg h-1 mgcat.-1 at -0.7 V versus the reversible hydrogen electrode and a maximum Faradaic efficiency of 23.43% at -0.6 V versus RHE. Besides, a continuous urea production with an enhanced average yield rate of 9145 μg h-1 mgcat.-1 can be achieved in a flow cell. These figures represent a substantial advancement over that of the baseline MoSe2 electrode. Density functional theory (DFT) calculations elucidate that Cu doping accelerates *NO2 deoxygenation and significantly decreases the energy barriers for C-N bond formation. Consequently, Cu-MoSe2 demonstrates a more favorable pathway for urea production, enhancing both the efficiency and feasibility of the process. This study offers valuable insights into electrode design and understanding of the facilitated electrochemical pathways.
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Affiliation(s)
- Jiadi Jiang
- The Key Laboratory of Functional Molecular Solids, Ministry of Education, The Key Laboratory of Electrochemical Clean Energy of Anhui Higher Education Institutes, College of Chemistry and Materials Science, Anhui Normal University, Wuhu 241002, P. R. China
| | - Guanzheng Wu
- The Key Laboratory of Functional Molecular Solids, Ministry of Education, The Key Laboratory of Electrochemical Clean Energy of Anhui Higher Education Institutes, College of Chemistry and Materials Science, Anhui Normal University, Wuhu 241002, P. R. China
| | - Mengmiao Sun
- The Key Laboratory of Functional Molecular Solids, Ministry of Education, The Key Laboratory of Electrochemical Clean Energy of Anhui Higher Education Institutes, College of Chemistry and Materials Science, Anhui Normal University, Wuhu 241002, P. R. China
| | - Yi Liu
- The Key Laboratory of Functional Molecular Solids, Ministry of Education, The Key Laboratory of Electrochemical Clean Energy of Anhui Higher Education Institutes, College of Chemistry and Materials Science, Anhui Normal University, Wuhu 241002, P. R. China
| | - Yidong Yang
- The Key Laboratory of Functional Molecular Solids, Ministry of Education, The Key Laboratory of Electrochemical Clean Energy of Anhui Higher Education Institutes, College of Chemistry and Materials Science, Anhui Normal University, Wuhu 241002, P. R. China
| | - Aijun Du
- School of Chemistry and Physics and Centre for Material Science, Faculty of Science, Queensland University of Technology, Gardens Point Campus, Brisbane, QLD 4001, Australia
| | - Lei Dai
- Key Laboratory for Special Functional Materials of Ministry of Education, School of Materials Science and Engineering, Academy for Advanced Interdisciplinary Studies, Henan University, Kaifeng 475004, P. R. China
| | - Xin Mao
- School of Chemistry and Physics and Centre for Material Science, Faculty of Science, Queensland University of Technology, Gardens Point Campus, Brisbane, QLD 4001, Australia
| | - Qing Qin
- The Key Laboratory of Functional Molecular Solids, Ministry of Education, The Key Laboratory of Electrochemical Clean Energy of Anhui Higher Education Institutes, College of Chemistry and Materials Science, Anhui Normal University, Wuhu 241002, P. R. China
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Fu Q, Wei C, Wang M. Transition-Metal-Based Nanozymes: Synthesis, Mechanisms of Therapeutic Action, and Applications in Cancer Treatment. ACS NANO 2024; 18:12049-12095. [PMID: 38693611 DOI: 10.1021/acsnano.4c02265] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2024]
Abstract
Cancer, as one of the leading causes of death worldwide, drives the advancement of cutting-edge technologies for cancer treatment. Transition-metal-based nanozymes emerge as promising therapeutic nanodrugs that provide a reference for cancer therapy. In this review, we present recent breakthrough nanozymes for cancer treatment. First, we comprehensively outline the preparation strategies involved in creating transition-metal-based nanozymes, including hydrothermal method, solvothermal method, chemical reduction method, biomimetic mineralization method, and sol-gel method. Subsequently, we elucidate the catalytic mechanisms (catalase (CAT)-like activities), peroxidase (POD)-like activities), oxidase (OXD)-like activities) and superoxide dismutase (SOD)-like activities) of transition-metal-based nanozymes along with their activity regulation strategies such as morphology control, size manipulation, modulation, composition adjustment and surface modification under environmental stimulation. Furthermore, we elaborate on the diverse applications of transition-metal-based nanozymes in anticancer therapies encompassing radiotherapy (RT), chemodynamic therapy (CDT), photodynamic therapy (PDT), photothermal therapy (PTT), sonodynamic therapy (SDT), immunotherapy, and synergistic therapy. Finally, the challenges faced by transition-metal-based nanozymes are discussed alongside future research directions. The purpose of this review is to offer scientific guidance that will enhance the clinical applications of nanozymes based on transition metals.
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Affiliation(s)
- Qinrui Fu
- Institute for Translational Medicine, The Affiliated Hospital of Qingdao University, College of Medicine, Qingdao University, Qingdao 266021, People's Republic of China
| | - Chuang Wei
- Institute for Translational Medicine, The Affiliated Hospital of Qingdao University, College of Medicine, Qingdao University, Qingdao 266021, People's Republic of China
| | - Mengzhen Wang
- Institute for Translational Medicine, The Affiliated Hospital of Qingdao University, College of Medicine, Qingdao University, Qingdao 266021, People's Republic of China
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Wang J, Yao C, Lu S, Wang S, Zheng D, Song F, Wan J. Enhanced magnetic anisotropy of iridium dimers on antisite defects of two-dimensional transition-metal dichalcogenides. Phys Chem Chem Phys 2024; 26:11798-11806. [PMID: 38566592 DOI: 10.1039/d4cp00301b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
The combination of transition-metal (TM) elements with two-dimensional (2D) transition-metal dichalcogenides (TMDs) provides an effective route to realizing a 2D controllable magnetic order, leading to significant applications in multifunctional nanospintronics. However, in most TM atoms@TMDs nanostructures, it is challenging for the magnetic anisotropy energy (MAE) to exceed 30 meV when affected by the crystal field. Hence, the stronger magnetic anisotropy of TMDs has yet to be developed. Here, utilizing first-principle calculations based on density functional theory (DFT), a feasible method to enhance the MAEs of TMDs via configurating iridium dimers (Ir2) on 2D traditional and Janus TMDs with antisite defects is reported. Calculations revealed that 28 of the 54 configurations considered possessed structure-dependent MAEs of >60 meV per Ir2 in the out-of-plane direction, suggesting the potential for applications at room temperature. We also showed the ability to tune the MAE further massively by applying a biaxial strain as well as the surface asymmetric polarization reversal of Janus-type substrates. This approach led to changes to >80 meV per Ir2. This work provides a novel strategy to achieve tunable large magnetic anisotropy in 2D TMDs. It also extends the functionality of antisite-defective TMDs, thereby providing theoretical support for the development of magnetic nanodevices.
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Affiliation(s)
- Jun Wang
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China.
| | - Chen Yao
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China.
| | - Siqi Lu
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China.
- Atomic Manufacture Institute (AMI), 211805 Nanjing, China
| | - Suyun Wang
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China.
| | - Dong Zheng
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China.
- Atomic Manufacture Institute (AMI), 211805 Nanjing, China
| | - Fengqi Song
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China.
- Atomic Manufacture Institute (AMI), 211805 Nanjing, China
| | - Jianguo Wan
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China.
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Liu J, Wan S, Li B, Li B, Liang J, Lu P, Zhang Z, Li W, Li X, Huangfu Y, Wu R, Song R, Yang X, Liu C, Hong R, Duan X, Li J, Duan X. Highly Robust Room-Temperature Interfacial Ferromagnetism in Ultrathin Co 2Si Nanoplates. NANO LETTERS 2024; 24:3768-3776. [PMID: 38477579 DOI: 10.1021/acs.nanolett.4c00321] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/14/2024]
Abstract
The reduced dimensionality and interfacial effects in magnetic nanostructures open the feasibility to tailor magnetic ordering. Here, we report the synthesis of ultrathin metallic Co2Si nanoplates with a total thickness that is tunable to 2.2 nm. The interfacial magnetism coupled with the highly anisotropic nanoplate geometry leads to strong perpendicular magnetic anisotropy and robust hard ferromagnetism at room temperature, with a Curie temperature (TC) exceeding 950 K and a coercive field (HC) > 4.0 T at 3 K and 8750 Oe at 300 K. Theoretical calculations suggest that ferromagnetism originates from symmetry breaking and undercoordinated Co atoms at the Co2Si and SiO2 interface. With protection by the self-limiting intrinsic oxide, the interfacial ferromagnetism of the Co2Si nanoplates exhibits excellent environmental stability. The controllable growth of ambient stable Co2Si nanoplates as 2D hard ferromagnets could open exciting opportunities for fundamental studies and applications in Si-based spintronic devices.
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Affiliation(s)
- Jialing Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Si Wan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Bo Li
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Bailing Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jingyi Liang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Ping Lu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Zucheng Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Wei Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Xin Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Ying Huangfu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Ruixia Wu
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Rong Song
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Xiangdong Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Zhejiang Institute of Tianjin University, Ningbo 315211, China
| | - Chang Liu
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Ruohao Hong
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
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Coelho PM. Magnetic doping in transition metal dichalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:203001. [PMID: 38324890 DOI: 10.1088/1361-648x/ad271b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2023] [Accepted: 02/07/2024] [Indexed: 02/09/2024]
Abstract
Transition metal dichalcogenides (TMDCs) are materials with unique electronic properties due to their two-dimensional nature. Recently, there is a large and growing interest in synthesizing ferromagnetic TMDCs for applications in electronic devices and spintronics. Apart from intrinsically magnetic examples, modification via either intrinsic defects or external dopants may induce ferromagnetism in non-magnetic TMDCs and, hence expand the application of these materials. Here, we review recent experimental work on intrinsically non-magnetic TMDCs that present ferromagnetism as a consequence of either intrinsic defects or doping via self-flux approach, ion implantation or e-beam evaporation. The experimental work discussed here is organized by modification/doping mechanism. We also review current work on density functional theory calculations that predict ferromagnetism in doped systems, which also serve as preliminary data for the choice of new doped TMDCs to be explored experimentally. Implementing a controlled process to induce magnetism in two-dimensional materials is key for technological development and this topical review discusses the fundamental procedures while presenting promising materials to be investigated in order to achieve this goal.
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Affiliation(s)
- Paula Mariel Coelho
- Department of Physics, University of North Florida, Jacksonville, FL, United States of America
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Ortiz Jimenez V, Pham YTH, Zhou D, Liu M, Nugera FA, Kalappattil V, Eggers T, Hoang K, Duong DL, Terrones M, Rodriguez Gutiérrez H, Phan M. Transition Metal Dichalcogenides: Making Atomic-Level Magnetism Tunable with Light at Room Temperature. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2304792. [PMID: 38072638 PMCID: PMC10870067 DOI: 10.1002/advs.202304792] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 11/04/2023] [Indexed: 02/17/2024]
Abstract
The capacity to manipulate magnetization in 2D dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2 , where M = V, Fe, and Cr; T = W, Mo; X = S, Se, and Te), may lead to innovative applications in spintronics, spin-caloritronics, valleytronics, and quantum computation. This Perspective paper explores the mediation of magnetization by light under ambient conditions in 2D-TMD DMSs and heterostructures. By combining magneto-LC resonance (MLCR) experiments with density functional theory (DFT) calculations, we show that the magnetization can be enhanced using light in V-doped TMD monolayers (e.g., V-WS2 , V-WSe2 ). This phenomenon is attributed to excess holes in the conduction and valence bands, and carriers trapped in magnetic doping states, mediating the magnetization of the semiconducting layer. In 2D-TMD heterostructures (VSe2 /WS2 , VSe2 /MoS2 ), the significance of proximity, charge-transfer, and confinement effects in amplifying light-mediated magnetism is demonstrated. We attributed this to photon absorption at the TMD layer that generates electron-hole pairs mediating the magnetization of the heterostructure. These findings will encourage further research in the field of 2D magnetism and establish a novel design of 2D-TMDs and heterostructures with optically tunable magnetic functionalities, paving the way for next-generation magneto-optic nanodevices.
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Affiliation(s)
- Valery Ortiz Jimenez
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
- Nanoscale Device Characterization DivisionNational Institute of Standards and TechnologyGaithersburgMD20899USA
| | | | - Da Zhou
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Mingzu Liu
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | | | | | - Tatiana Eggers
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
| | - Khang Hoang
- Center for Computationally Assisted Science and Technology and Department of PhysicsNorth Dakota State UniversityFargoND58108USA
| | - Dinh Loc Duong
- Department of PhysicsMontana State UniversityBozemanMT59717USA
| | - Mauricio Terrones
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | | | - Manh‐Huong Phan
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
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Liu P, Li Y, Xu H, Shi L, Kong J, Lv X, Zhang J, Che R. Hierarchical Fe-Co@TiO 2 with Incoherent Heterointerfaces and Gradient Magnetic Domains for Electromagnetic Wave Absorption. ACS NANO 2024; 18:560-570. [PMID: 38109426 DOI: 10.1021/acsnano.3c08569] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/20/2023]
Abstract
Induced polarization response and integrated magnetic resonance show prosperous advantages in boosting electromagnetic wave absorption but still face huge challenges in revealing the intrinsic mechanism. In this work, we propose a self-confined strategy to construct hierarchical Fe-Co@TiO2 microrods with numerous incoherent heterointerfaces and gradient magnetic domains. The results demonstrate that the use of polyvinylpyrrolidone (PVP) coating is crucial for the subsequent deposition of Co-zeolitic imidazolate frameworks (ZIF-67), the distance of ordered arranged metal ions manipulates the size of magnetic domains, and the pyrolysis of PVP layers restricts the eutectic process of Fe-Co alloys to some extent. As a result, these introduced lattice defects, oxygen vacancies, and incoherent heterointerfaces inevitably generate a strong polarization response, and the regulated gradient magnetic domains realize integrated magnetic resonance, including macroscopic magnetic coupling, long-range magnetic diffraction, and nanoscale magnetic bridge connection, and both of the intrinsic mechanisms in dissipating electromagnetic energy are quantitatively clarified by Lorentz off-axis electron holography. Owing to the cooperative merits, the Fe-Co@TiO2 absorbents exhibit enhanced absorption intensity and strong absorption bandwidth. This study inspires us to develop a generalized strategy for manipulating the size of magnetic domains, and the integrated magnetic resonance theory provides a versatile methodology in clarifying magnetic loss mechanism.
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Affiliation(s)
- Panbo Liu
- School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an 710129, P. R. China
| | - Yurou Li
- School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an 710129, P. R. China
| | - Hanxiao Xu
- School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an 710129, P. R. China
| | - Lingzi Shi
- School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an 710129, P. R. China
| | - Jie Kong
- School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an 710129, P. R. China
| | - Xiaowei Lv
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Fudan University, Shanghai 200438, P. R. China
| | | | - Renchao Che
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Fudan University, Shanghai 200438, P. R. China
- Zhejiang Laboratory, Hangzhou 3111100, P. R. China
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Gao Z, Xin B, Chen J, Liu Z, Yao R, Ai W, He Y, Xu L, Cheng TH, Wang WH, Luo F. Above-Room-Temperature Ferromagnetism in Copper-Doped Two-Dimensional Chromium-Based Nanosheets. ACS NANO 2024; 18:703-712. [PMID: 38133597 DOI: 10.1021/acsnano.3c08998] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
Two-dimensional ferromagnetic materials (2D-FMs) are expected to become ideal candidates for low-power, high-density information storage in next-generation spintronics devices due to their atomically ultrathin and intriguing magnetic properties. However, 2D-FMs with room-temperature Curie temperatures (Tc) are still rarely reported, which greatly hinders their research progress and practical applications. Herein, ultrathin Cu-doped Cr7Te8 FMs were successfully prepared and can achieve above-room-temperature ferromagnetism with perpendicular magnetic anisotropy via a facile chemical vapor deposition (CVD) method, which can be controlled down to an atomic thin layer of ∼3.4 nm. STEM-EDX quantitative analysis shows that the proportion of Cu to metal atoms is ∼5%. Moreover, based on the anomalous Hall effect (AHE) measurements in a six-terminal Hall bar device without any encapsulation as well as an out-of-plane magnetic field, the maximum Tc achieved ∼315 K when the thickness of the sample is ∼28.8 nm; even the ultrathin 7.6 nm sample possessed a near-room-temperature Tc of ∼275 K. Meanwhile, theoretical calculations elucidated the mechanism of the ferromagnetic enhancement of Cu-doped Cr7Te8 nanosheets. More importantly, the ferromagnetism of CVD-synthesized Cu-doped CrSe nanosheets can also be maintained above room temperature. Our work broadens the scope on room-temperature ferromagnets and their heterojunctions, promoting fundamental research and practical applications in next-generation spintronics.
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Affiliation(s)
- Zhansheng Gao
- Center for the Physics of Low-Dimensional Materials, Henan Joint International Research Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University, Kaifeng 475004, China
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
| | - Baojuan Xin
- Department of Electronic Science and Engineering, College of Electronic Information and Optical Engineering and Engineering Research Center of Thin Film Optoelectronics Technology (MOE), Nankai University, Tianjin 300350, China
| | - Jiabiao Chen
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
| | - Zhaochao Liu
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
| | - Rui Yao
- Department of Electronic Science and Engineering, College of Electronic Information and Optical Engineering and Engineering Research Center of Thin Film Optoelectronics Technology (MOE), Nankai University, Tianjin 300350, China
| | - Wei Ai
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
| | - Yuyu He
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
| | - Lingyun Xu
- Department of Electronic Science and Engineering, College of Electronic Information and Optical Engineering and Engineering Research Center of Thin Film Optoelectronics Technology (MOE), Nankai University, Tianjin 300350, China
| | - Tong-Huai Cheng
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
| | - Wei-Hua Wang
- Department of Electronic Science and Engineering, College of Electronic Information and Optical Engineering and Engineering Research Center of Thin Film Optoelectronics Technology (MOE), Nankai University, Tianjin 300350, China
| | - Feng Luo
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
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11
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Sovizi S, Angizi S, Ahmad Alem SA, Goodarzi R, Taji Boyuk MRR, Ghanbari H, Szoszkiewicz R, Simchi A, Kruse P. Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering. Chem Rev 2023; 123:13869-13951. [PMID: 38048483 PMCID: PMC10756211 DOI: 10.1021/acs.chemrev.3c00147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Revised: 08/31/2023] [Accepted: 11/09/2023] [Indexed: 12/06/2023]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.
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Affiliation(s)
- Saeed Sovizi
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Shayan Angizi
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
| | - Sayed Ali Ahmad Alem
- Chair in
Chemistry of Polymeric Materials, Montanuniversität
Leoben, Leoben 8700, Austria
| | - Reyhaneh Goodarzi
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | | | - Hajar Ghanbari
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | - Robert Szoszkiewicz
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Abdolreza Simchi
- Department
of Materials Science and Engineering and Institute for Nanoscience
and Nanotechnology, Sharif University of
Technology, 14588-89694 Tehran, Iran
- Center for
Nanoscience and Nanotechnology, Institute for Convergence Science
& Technology, Sharif University of Technology, 14588-89694 Tehran, Iran
| | - Peter Kruse
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
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12
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Liu G, Xing X, Wu C, Jin J, Yan M. Interface-induced enhanced room temperature ferromagnetism in hybrid transition metal dichalcogenides. J Colloid Interface Sci 2023; 652:2076-2084. [PMID: 37696061 DOI: 10.1016/j.jcis.2023.09.031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/23/2023] [Revised: 08/12/2023] [Accepted: 09/06/2023] [Indexed: 09/13/2023]
Abstract
Magnetic semiconductors with both electron charge and spin features exhibit tremendous potential in spintronics. Although defective transition-metal dichalcogenides are promising with induced room temperature (RT) magnetic moments, impacts of the defect type and underlying mechanisms remain unclear. Herein, two strategies involving elemental substitution and epitaxial growth have been explored to synthesize alloyed and hybrid MoSe2-xSx with lattice distortion and artificial interfaces respectively. Both experimental measurements and first-principle calculations demonstrate induced magnetism in the resultant MoSe2-xSx with the magnetization intensity closely associated to the atomic structure. The alloyed MoSe2-xSx exhibits satisfactory structural stability and atomic magnetic moments due to the Mo 4d orbital splitting induced by lattice distortion. Nevertheless, both enhanced RT ferromagnetism and thermomagnetic stability can be achieved for the hybrid MoSe2-xSx resulted from stronger localized spin polarization at the MoSe2/MoS2 interfaces. As such the work not only sheds light on the mechanisms underlying defect-induced ferromagnetism in transition-metal dichalcogenides, but also proposes an interface engineering strategy to induce significant ferromagnetism for multi-fields including spintronics, multiferroics and valleytronics.
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Affiliation(s)
- Guang Liu
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
| | - Xuejun Xing
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
| | - Chen Wu
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China; Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030032, China.
| | - Jiaying Jin
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
| | - Mi Yan
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China.
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13
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Geng L, Chen K, Lu H, Wang S, Yang Y. Exploring electronic and valley properties of single-layer SMSiN 2 (M = Mo, W): a first-principles study on two-dimensional Janus materials. Phys Chem Chem Phys 2023; 25:32021-32028. [PMID: 37981807 DOI: 10.1039/d3cp04283a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2023]
Abstract
In this study, we employ first-principles calculations to explore the electronic and valleytronic properties of single-layer (SL) SMSiN2 (M = Mo, W), which are two-dimensional Janus materials with strong spin-orbit coupling. Our findings indicate that SL SMoSiN2/SWSiN2 possess a direct/indirect band gap, where the valence band maximum is situated at the K/K' point, giving rise to the formation of degenerate valleys. When considering spin-orbit coupling, SMoSiN2 and SWSiN2 demonstrate intriguing valley spin splitting in their valleys, with a maximum splitting of up to 0.14/0.39 eV in the valence bands. By implementing magnetic doping with V and Cr, we provide a demonstration that valley polarization could be realized in SL SMSiN2. Moreover, the findings reveal high carrier mobility in SL SMSiN2, notably in SWSiN2, where hole carriers can achieve a remarkable mobility of up to 7.98 × 103 cm2 V-1 s-1 along the zigzag direction. Furthermore, our observations suggest that strain can be effectively utilized to manipulate the character and magnitude of the band gap, as well as the valley spin splitting in these materials.
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Affiliation(s)
- Lijie Geng
- School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou, China.
- Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou University of Light Industry, Zhengzhou, China
| | - Kun Chen
- School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou, China.
- Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou University of Light Industry, Zhengzhou, China
| | - Hongyan Lu
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, China
| | - Shizhuo Wang
- School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou, China.
- Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou University of Light Industry, Zhengzhou, China
| | - Yang Yang
- School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou, China.
- Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou University of Light Industry, Zhengzhou, China
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14
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Jiang J, Feng W, Wen Y, Yin L, Wang H, Feng X, Pei YL, Cheng R, He J. Tuning 2D Magnetism in Cobalt Monoxide Nanosheets Via In Situ Nickel-Doping. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301668. [PMID: 37015006 DOI: 10.1002/adma.202301668] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Revised: 03/23/2023] [Indexed: 06/02/2023]
Abstract
Element doping has become an effective strategy to engineer the magnetic properties of two-dimensional (2D) materials and is widely explored in van der Waals layered transition metal dichalcogenides. However, the high-concentration substitution doping of 2D nonlayered metal oxides, which can preserve the original crystal texture and guarantee the homogeneity of doping distribution, is still a critical challenge due to the isotropic bonding of closed-packed structures. In this work, the synthesis of high-quality 2D nonlayered nickel-doped cobalt monoxide nanosheets via in situ atmospheric pressure chemical vapor deposition method is reported. High-resolution transmission electron microscopy confirmed that nickel atoms are doped at the intrinsic cobalt atom sites. The nickel doping concentration is stable at ≈15%, superior to most magnetic dopants doping in 2D materials and metal oxides. Magnetic measurements showed that pristine cobalt monoxide is nonferromagnetic, whereas nickel-doped cobalt monoxide exhibits robust ferromagnetic behavior with a Curie temperature of ≈180 K. Density functional theory calculations reveal that nickel atoms can improve the internal ferromagnetic correlation, giving rise to significant ferromagnetic performance of cobalt monoxide nanosheets. These results provide a valuable case for tuning the competing correlated states and magnetic ordering by substitution doping in 2D nonlayered oxide semiconductors.
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Affiliation(s)
- Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
| | - Wenyong Feng
- The State Key Lab of Optoelectronic Materials & Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
| | - Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
| | - Yan-Li Pei
- The State Key Lab of Optoelectronic Materials & Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
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15
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Hussain S, Zhou R, Li Y, Qian Z, Urooj Z, Younas M, Zhao Z, Zhang Q, Dong W, Wu Y, Zhu X, Wang K, Chen Y, Liu L, Xie L. Liquid Phase Edge Epitaxy of Transition-Metal Dichalcogenide Monolayers. J Am Chem Soc 2023; 145:11348-11355. [PMID: 37172002 DOI: 10.1021/jacs.3c02471] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
Precise monolayer epitaxy is important for two-dimensional (2D) semiconductors toward future electronics. Here, we report a new self-limited epitaxy approach, liquid phase edge epitaxy (LPEE), for precise-monolayer epitaxy of transition-metal dichalcogenides. In this method, the liquid solution contacts 2D grains only at the edges, which confines the epitaxy only at the grain edges and then precise monolayer epitaxy can be achieved. High-temperature in situ imaging of the epitaxy progress directly supports this edge-contact epitaxy mechanism. Typical transition-metal dichalcogenide monolayers (MX2, M = Mo, W, and Re; X = S or Se) have been obtained by LPEE with a proper choice of molten alkali halide solvents (AL, A = Li, Na, K, and Cs; L = Cl, Br, or I). Furthermore, alloying and magnetic-element doping have also been realized by taking advantage of the liquid phase epitaxy approach. This LPEE method provides a precise and highly versatile approach for 2D monolayer epitaxy and can revolutionize the growth of 2D materials toward electronic applications.
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Affiliation(s)
- Sabir Hussain
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Rui Zhou
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - You Li
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ziyue Qian
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zunaira Urooj
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Misbah Younas
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhaoyang Zhao
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Wenlong Dong
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yueyang Wu
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Xiaokai Zhu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kangkang Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yuansha Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Luqi Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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16
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Fang M, Yang EH. Advances in Two-Dimensional Magnetic Semiconductors via Substitutional Doping of Transition Metal Dichalcogenides. MATERIALS (BASEL, SWITZERLAND) 2023; 16:ma16103701. [PMID: 37241328 DOI: 10.3390/ma16103701] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Revised: 04/14/2023] [Accepted: 05/10/2023] [Indexed: 05/28/2023]
Abstract
Transition metal dichalcogenides (TMDs) are two-dimensional (2D) materials with remarkable electrical, optical, and chemical properties. One promising strategy to tailor the properties of TMDs is to create alloys through a dopant-induced modification. Dopants can introduce additional states within the bandgap of TMDs, leading to changes in their optical, electronic, and magnetic properties. This paper overviews chemical vapor deposition (CVD) methods to introduce dopants into TMD monolayers, and discusses the advantages, limitations, and their impacts on the structural, electrical, optical, and magnetic properties of substitutionally doped TMDs. The dopants in TMDs modify the density and type of carriers in the material, thereby influencing the optical properties of the materials. The magnetic moment and circular dichroism in magnetic TMDs are also strongly affected by doping, which enhances the magnetic signal in the material. Finally, we highlight the different doping-induced magnetic properties of TMDs, including superexchange-induced ferromagnetism and valley Zeeman shift. Overall, this review paper provides a comprehensive summary of magnetic TMDs synthesized via CVD, which can guide future research on doped TMDs for various applications, such as spintronics, optoelectronics, and magnetic memory devices.
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Affiliation(s)
- Mengqi Fang
- Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ 07030, USA
| | - Eui-Hyeok Yang
- Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ 07030, USA
- Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, NJ 07030, USA
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17
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Jiang J, Cheng R, Feng W, Yin L, Wen Y, Wang Y, Cai Y, Liu Y, Wang H, Zhai B, Liu C, He J, Wang Z. Van der Waals Epitaxy Growth of 2D Single-Element Room-Temperature Ferromagnet. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211701. [PMID: 36807945 DOI: 10.1002/adma.202211701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2022] [Indexed: 05/12/2023]
Abstract
2D single-element materials, which are pure and intrinsically homogeneous on the nanometer scale, can cut the time-consuming material-optimization process and circumvent the impure phase, bringing about opportunities to explore new physics and applications. Herein, for the first time, the synthesis of ultrathin cobalt single-crystalline nanosheets with a sub-millimeter scale via van der Waals epitaxy is demonstrated. The thickness can be as low as ≈6 nm. Theoretical calculations reveal their intrinsic ferromagnetic nature and epitaxial mechanism: that is, the synergistic effect between van der Waals interactions and surface energy minimization dominates the growth process. Cobalt nanosheets exhibit ultrahigh blocking temperatures above 710 K and in-plane magnetic anisotropy. Electrical transport measurements further reveal that cobalt nanosheets have significant magnetoresistance (MR) effect, and can realize a unique coexistence of positive MR and negative MR under different magnetic field configurations, which can be attributed to the competition and cooperation effect among ferromagnetic interaction, orbital scattering, and electronic correlation. These results provide a valuable case for synthesizing 2D elementary metal crystals with pure phase and room-temperature ferromagnetism and pave the way for investigating new physics and related applications in spintronics.
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Affiliation(s)
- Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, And School of Physical and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, And School of Physical and Technology, Wuhan University, Wuhan, 430072, P. R. China
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Wenyong Feng
- The State Key Lab of Optoelectronic Materials & Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, P. R. China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, And School of Physical and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, And School of Physical and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Yanrong Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Yuchen Cai
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Yong Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, And School of Physical and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Hao Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, And School of Physical and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, And School of Physical and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, And School of Physical and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, And School of Physical and Technology, Wuhan University, Wuhan, 430072, P. R. China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, P. R. China
| | - Zhenxing Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
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18
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Guan H, Zhao B, Zhao W, Ni Z. Liquid-precursor-intermediated synthesis of atomically thin transition metal dichalcogenides. MATERIALS HORIZONS 2023; 10:1105-1120. [PMID: 36628937 DOI: 10.1039/d2mh01207c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
With the rapid development of integrated electronics and optoelectronics, methods for the scalable industrial-scale growth of two-dimensional (2D) transition metal dichalcogenide (TMD) materials have become a hot research topic. However, the control of gas distribution of solid precursors in common chemical vapor deposition (CVD) is still a challenge, resulting in the growth of 2D TMDs strongly influenced by the location of the substrate from the precursor powder. In contrast, liquid-precursor-intermediated growth not only avoids the use of solid powders but also enables the uniform distribution of precursors on the substrate through spin-coating, which is much more favorable for the synthesis of wafer-scale TMDs. Moreover, the spin-coating process based on liquid precursors can control the thickness of the spin-coated films by regulating the solution concentration and spin-coating speed. Herein, this review focuses on the recent progress in the synthesis of 2D TMDs based on liquid-precursor-intermediated CVD (LPI-CVD) growth. Firstly, the different assisted treatments based on LPI-CVD strategies for monolayer 2D TMDs are introduced. Then, the progress in the regulation of the different physical properties of monolayer 2D TMDs by substitution of the transition metal and their corresponding heterostructures based on LPI-CVD growth are summarized. Finally, the challenges and perspectives of 2D TMDs based on the LPI-CVD method are discussed.
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Affiliation(s)
- Huiyan Guan
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Bei Zhao
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Weiwei Zhao
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Zhenhua Ni
- School of Physics, Southeast University, Nanjing 211189, China.
- Purple Mountain Laboratories, Nanjing 211111, China
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19
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Liu F, Fan Z. Defect engineering of two-dimensional materials for advanced energy conversion and storage. Chem Soc Rev 2023; 52:1723-1772. [PMID: 36779475 DOI: 10.1039/d2cs00931e] [Citation(s) in RCA: 47] [Impact Index Per Article: 47.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/14/2023]
Abstract
In the global trend towards carbon neutrality, sustainable energy conversion and storage technologies are of vital significance to tackle the energy crisis and climate change. However, traditional electrode materials gradually reach their property limits. Two-dimensional (2D) materials featuring large aspect ratios and tunable surface properties exhibit tremendous potential for improving the performance of energy conversion and storage devices. To rationally control the physical and chemical properties for specific applications, defect engineering of 2D materials has been investigated extensively, and is becoming a versatile strategy to promote the electrode reaction kinetics. Simultaneously, exploring the in-depth mechanisms underlying defect action in electrode reactions is crucial to provide profound insight into structure tailoring and property optimization. In this review, we highlight the cutting-edge advances in defect engineering in 2D materials as well as their considerable effects in energy-related applications. Moreover, the confronting challenges and promising directions are discussed for the development of advanced energy conversion and storage systems.
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Affiliation(s)
- Fu Liu
- Department of Chemistry, City University of Hong Kong, Hong Kong 999077, China.
| | - Zhanxi Fan
- Department of Chemistry, City University of Hong Kong, Hong Kong 999077, China. .,Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong 999077, China.,Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China
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