2D Material Infrared Photonics and Plasmonics

Electronic and Optical Properties of 2D Heterostructure Bilayers of Graphene, Borophene and 2D Boron Carbides from First Principles

In the present work the atomic, electronic and optical properties of two-dimensional graphene, borophene, and boron carbide heterojunction bilayer systems (Graphene-BC3, Graphene-Borophene and Graphene-B4C3) as well as their constituent monolayers are investigated on the basis of first-principles calculations using the HSE06 hybrid functional. Our calculations show that while borophene is metallic, both monolayer BC3 and B4C3 are indirect semiconductors, with band-gaps of 1.822 eV and 2.381 eV as obtained using HSE06. The Graphene-BC3 and Graphene-B4C3 bilayer heterojunction systems maintain the Dirac point-like character of graphene at the K-point with the opening of a very small gap (20-50 meV) and are essentially semi-metals, while Graphene-Borophene is metallic. All bilayer heterostructure systems possess absorbance in the visible region where the resonance frequency and resonance absorption peak intensity vary between structures. Remarkably, all heterojunctions support plasmons within the range 16.5-18.5 eV, while Graphene-B4C3 and Graphene-Borophene exhibit a π-type plasmon within the region 4-6 eV, with the latter possessing an additional plasmon at the lower energy of 1.5-3 eV. The dielectric tensor for Graphene-B4C3 exhibits complex off-diagonal elements due to the lower P3 space group symmetry indicating it has anisotropic dielectric properties and could exhibit optically active (chiral) effects. Our study shows that the two-dimensional heterostructures have desirable optical properties broadening the potential applications of the constituent monolayers.

Surface Reconstruction and Layer-Dependent Semiconductor-to-Metal Transition of Zinc-Blende CdSe

In this work, CdSe was taken as the representation to systematically investigate the (111) and (110) surface reconstructions, the electronic properties transition related to the layer size, and the corresponding physical mechanism through the density functional theory (DFT) calculation. For the (111) surface slab structure, the bulk truncated relaxation (BTR) surface and the honeycomb (HC) surface were carefully examined. The HC surface configuration, ignored by previous studies, is an energetically preferred surface compared to both the as-truncated and BTR configurations. Based on the HC surface, the band structure of the (111) surface shows a semiconductor character below four layers (4L). Surprisingly, the (111) CdSe turns metallic in the 4L system. In a higher-layer (>4L) system, the two side surfaces and internal regions show metallic and semiconductivity features, respectively. Such an abundant electronic properties transition should be attributed to the electron transfer under the intrinsic polarization perpendicular to the asymmetrical (111) plane. Different from the (111) surface, drastic structural reconstructions were not observed in the (110) surface and the band gap gradually decreased with the increasing number of layers until it approached the value in the bulk. Our results not only revealed the additional possible surface structure but also clarified the underlying mechanism of semiconductor-to-metal (even the edge metallic) transition related to the number of layers. All these findings could be extended to other II-VI group MX compounds for further development of electronic devices.

Coloring Tetrahedral Semiconductors: Synthesis and Photoluminescence Enhancement of Ternary II-III2-VI4 Colloidal Nanocrystals

Ternary tetrahedral II-III2-VI4 semiconductors, where II is Zn or Cd, III In or Ga, and VI S, Se, or Te, are of interest in UV radiation detectors in medicine and space physics as well as CO2 photoreduction under visible light. We synthesize colloidal II-III2-VI4 semiconductor nanocrystals from readily available precursors and ascertain their ternary nature by structural and spectroscopic methods, including 77Se solid-state NMR spectroscopy. The pyramidally shaped nanocrystals range between 2 and 12 nm and exhibit optical gaps of 2-3.9 eV. In the presence of excess anions on the particle surface, treatment with Lewis acidic, Z-type ligands results in better passivation and enhanced photoluminescence. Electronic structure calculations reveal the most stable, lowest energy polymorphs and coloring patterns. This work will pave the way toward more environmentally friendly, ternary semiconductors for optoelectronics and electrocatalysis.

Dual-Electrically Configurable MoTe2/In2S3 Phototransistor toward Multifunctional Applications

Photodetectors, essential for a wide range of optoelectronic applications in both military and civilian sectors, face challenges in balancing responsivity, detectivity, and response time due to their inherent unidirectional carrier transport mechanism. Multifunctional photodetectors that address these trade-offs are highly sought after for their potential to reduce costs, simplify system design, and surpass Moore's Law limitations. Herein, we present a multimodal phototransistor based on a 2D MoTe2/In2S3 heterostructure. Through dual electrical modulation employing bias voltage and gate voltage, we engineer the energy band to achieve switchable photoresponse mechanisms between photoconductive and photovoltaic modes. In photoconductive mode, the device exhibits a responsivity of 320 A/W and a specific detectivity of 1.2 × 1013 Jones. Meanwhile, in photovoltaic mode, it exhibits a light on/off ratio of 2 × 105 and response speed of 0.68/0.60 ms. These capabilities enable multifunctional applications such as high-resolution imaging across various wavelengths, a conceptual optoelectronic logic gate, and dual-channel optical communication. This work makes an advancement in the development of future multifunctional optoelectronic devices.

Monolayers Sn2Te2X4 (X = P, As) as promising materials for photocatalytic water splitting and flexible devices: a DFT study

First principles calculation was performed to study the Sn2Te2X4 (X = P, As) monolayers. Structural investigation confirms the stability of the two monolayers with Young's modulus in the range of 30.34-33.65 N m-1 and a Poisson's ratio of 0.18-0.21. The two monolayers are semiconductors with a direct band gap of 1.52-1.66 eV. The light absorption rate of the two monolayers is rather high 104-105 cm-1. Both monolayers have high charge carrier mobility and suitable VBM and CBM positions for the redox reaction. The η STH efficiency of both materials (15.76-17.12%) is close to the theoretical limit of 18%. Moreover, moderate strains can improve the light absorption rate, while the suitable VBM and CBM positions are preserved. These characteristics suggest that Sn2Te2X4 (X = P, As) monolayers are good candidates for being applied in flexible devices and for the conversion of solar energy to other types of energy.

Graphene Monolayer Nanomesh Structures and Their Applications in Electromagnetic Energy Harvesting for Solving the Matching Conundrum of Rectennas

In this paper, we investigate various graphene monolayer nanomesh structures (diodes) formed only by nanoholes, with a diameter of just 20 nm and etched from the graphene layer in different shapes (such as rhombus, bow tie, rectangle, trapezoid, and triangle), and their electrical properties targeting electromagnetic energy harvesting applications. In this respect, the main parameters characterizing any nonlinear device for energy harvesting are extracted from tens of measurements performed on a single chip containing the fabricated diodes. The best nano-perforated graphene structure is the triangle nanomesh structure, which exhibits remarkable performance in terms of its characteristic parameters, e.g., a 420 Ω differential resistance for optimal impedance matching to an antenna, a high responsivity greater than 103 V/W, and a low noise equivalent power of 847 pW/√Hz at 0 V.

Efficient High-Order Harmonic Generation from the van der Waals Layered Crystal Copper Indium Thiophosphate

Layered metal thio- and selenophosphates (MTPs) are a family of van der Waals gapped materials that exhibit a multitude of functionalities in terms of magnetic, ferroelectric, and optical properties. Despite the recent progress in terms of understanding the material properties of these compounds, the potential of MTPs as a material class yet needs further scrutiny, especially in terms of nonlinear optical properties. Recent reports of efficient low-order harmonic generation and extremely high third-order nonlinear optical properties in MTPs suggest the potential application of these materials in integrated nanophotonics. In this article, we investigate the high-order nonlinear response of bulk and exfoliated thin-film crystals of copper indium thiophosphate (CIPS) to intense mid-infrared fields through experimental and computational studies of high-order harmonic generation (HHG). From a driving laser source with a 3.2 μm wavelength, we generate odd and even harmonics up to the 10th order, exceeding the bandgap of the material. We note conversion efficiencies as high as 10-7 measured for the fifth and seventh harmonics and observe that the harmonic intensities follow a power law scaling with the driving laser intensity, suggesting a perturbative nonlinear optical origin of the observed harmonics for both bulk and thin flakes. Furthermore, first-principles calculations suggest that the generation of the highest harmonic orders results from electron-electron interactions, suggesting a correlation-mediated enhancement of the high-order optical nonlinearity.

The Quest for Two-Dimensional MBenes: From Structural Evolution to Solar-Driven Hybrid Systems for Water-Fuel-Energy Generation and Phototherapy

The field of 2D materials has advanced significantly with the emergence of MBenes, a new material derived from the MAX phases family, a novel class of materials that originates from the MAX phases family. Herein, this article explores the unique characteristics and morphological variations of MBenes, offering a comprehensive overview of their structural evolution. First, the discussion explores the evolutionary period of 2D MBenes associated with the several techniques for synthesizing, modifying, and characterizing MBenes to tailor their structure and enhance their functionality. The focus then shifts to the defect chemistry of MBenes, electronic, catalytic, and photothermal properties which play a crucial role in designing multifunctional solar-driven hybrid systems. Second, the recent advancements and potentials of 2D MBenes in solar-driven hybrid systems e.g. photo-electro catalysis, hybrid solar evaporators for freshwater and thermoelectric generators, and phototherapy, emphasizing their crucial significance in tackling energy and environmental issues, are explored. The study further explores the fundamental principles that regulate the improved photocatalytic and photothermal characteristics of MBenes, highlighting their promise for effective utilization of solar energy and remediation of the environment. The study also thoroughly assesses MBenes' scalability, stability, and cost effectiveness in solar-driven systems. Current insights and future directions allow researchers to utilize MBenes for sustainable and varied applications. This review regarding MBenes will be valuable to early researchers intrigued with synthesizing and utilizing 2D materials for solar-powered water-energy-fuel and phototherapy systems.

Editorial for the Special Issue on Integrated Photonics and Optoelectronics

Integrated photonic and optoelectronic technologies have become powerful tools in the drive to develop devices that are much smaller and more highly integrated, with lower power consumption and higher functionality [...].

Room Temperature, Twist Angle Independent, Momentum Direct Interlayer Excitons in van der Waals Heterostructures with Wide Spectral Tunability

Interlayer excitons (IXs) in van der Waals heterostructures with static out of plane dipole moment and long lifetime show promise in the development of exciton based optoelectronic devices and the exploration of many body physics. However, these IXs are not always observed, as the emission is very sensitive to lattice mismatch and twist angle between the constituent materials. Moreover, their emission intensity is very weak compared to that of corresponding intralayer excitons at room temperature. Here we report the room-temperature realization of twist angle independent momentum direct IX in the heterostructures of bulk PbI2 and bilayer WS2. Momentum conserving transitions combined with the large band offsets between the constituent materials enable intense IX emission at room temperature. A long lifetime (∼100 ns), noticeable Stark shift, and tunability of IX emission from 1.70 to 1.45 eV by varying the number of WS2 layers make these heterostructures promising to develop room temperature exciton based optoelectronic devices.

Colloidal synthesis of two-dimensional nanocrystals by the polyol route

The field of 2D nanomaterials is ever-growing with a myriad of synthetic advancements that have been used to obtain such materials. There are top-down, as well as bottom-up, fabrication methods for obtaining 2D nanomaterials; however, synthesis of 2D nanomaterials from solution offers a simple scalable way to control size, shape, and surface. This review outlines the recent advances in colloidal polyol synthesis of 2D nanomaterials and provides perspectives on the similarities and differences in various syntheses. Various materials classes are presented and discussed, including metals, oxides, chalcogenides, and halides, that can be synthesized as 2D nanomaterials via a polyol process. Throughout the literature, polyol media is demonstrated to be versatile not only as a solvent and reducing agent for metal precursors but also as a binding and shape-directing agent for many 2D nanomaterials. Polyols also offer the ability to dissolve various surfactants and additives that can further control the morphology and composition of various nanomaterials. In this review, we outline the various 2D materials that have been realized via the solution polyol route.

Low Temperature Synthesis of 2D p-Type α-In2Te3 with Fast and Broadband Photodetection

2DA 2 III B 3 VI ${\mathrm{A}}_2^{{\mathrm{III}}}{\mathrm{B}}_3^{{\mathrm{VI}}}$ compounds (A = Al, Ga, In, and B = S, Se, and Te) with intrinsic structural defects offer significant opportunities for high-performance and functional devices. However, obtaining 2D atomic-thin nanoplates with non-layered structure on SiO2/Si substrate at low temperatures is rare, which hinders the study of their properties and applications at atomic-thin thickness limits. In this study, the synthesis of ultrathin, non-layered α-In2Te3 nanoplates is demonstrated using a BiOCl-assisted chemical vapor deposition method at a temperature below 350 °C on SiO2/Si substrate. Comprehensive characterization results confirm the high-quality single crystal is the low-temperature cubic phase α-In2Te3 , possessing a noncentrosymmetric defected ZnS structure with good second harmonic generation. Moreover, α-In2Te3 is revealed to be a p-type semiconductor with a direct and narrow bandgap value of 0.76 eV. The field effect transistor exhibits a high mobility of 18 cm2 V-1 s-1, and the photodetector demonstrates stable photoswitching behavior within a broadband photoresponse from 405 to 1064 nm, with a satisfactory response time of τrise = 1 ms. Notably, the α-In2Te3 nanoplates exhibit good stability against ambient environments. Together, these findings establish α-In2Te3 nanoplates as promising candidates for next-generation high-performance photonics and electronics.

Design of an ultrafast plasmonic nanolaser for high-intensity broadband emission operating at room temperature

We propose a plasmonic nanolaser based on a metal-insulator-semiconductor-insulator-metal (MISIM) structure, which effectively confines light on a subwavelength scale (∼λ/14). As the pump power increases, the proposed plasmonic nanolaser exhibits broadband output characteristics of 20 nm, and the maximum output power can reach 20 µW. Furthermore, the carrier lifetime at the upper energy level in our proposed structure is measured to be about 400 fs using a double pump-probe excitation. The ultrafast characteristic is attributed to the inherent Purcell effect of plasmonic systems. Our work paves the way toward deep-subwavelength mode confinement and ultrafast femtosecond plasmonic lasers in spaser-based interconnected, eigenmode engineering of plasmonic nanolasers, nano-LEDs, and spontaneous emission control.

Nonlinear Optical Saturable Absorption Properties of 2D VP Nanosheets and Application as SA in a Passively Q-Switched Nd:YVO4 Laser

Two-dimensional (2D) violet phosphorus (VP) plays a significant role in the applications of photonic and optoelectronic devices due to its unique optical and electrical properties. The ultrafast carrier dynamics and nonlinear optical absorption properties were systematically investigated here. The intra- and inter-band ultrafast relaxation times of 2D VP nanosheets were measured to be ~6.83 ps and ~62.91 ps using the pump-probe method with a probe laser operating at 1.03 μm. The nonlinear absorption coefficient βeff, the saturation intensity Is, the modulation depth ΔR, and the nonsaturable loss were determined to be -2.18 × 104 cm/MW, 329 kW/cm2, 6.3%, and 9.8%, respectively, by using the Z-scan and I-scan methods, indicating the tremendous saturable absorption property of 2D VP nanosheets. Furthermore, the passively Q-switched Nd:YVO4 laser was realized with the 2D VP nanosheet-based SA, in which the average output power of 700 mW and the pulse duration of 478 ns were obtained. These results effectively reveal the nonlinear optical absorption characteristics of VP nanosheets, demonstrating their outstanding light-manipulating capabilities and providing a basis for the applications of ultrafast optical devices. Our results verify the excellent saturable absorption properties of 2D VP, paving the way for its applications in pulsed laser generation.

Progress in Advanced Infrared Optoelectronic Sensors

Infrared optoelectronic sensors have attracted considerable research interest over the past few decades due to their wide-ranging applications in military, healthcare, environmental monitoring, industrial inspection, and human-computer interaction systems. A comprehensive understanding of infrared optoelectronic sensors is of great importance for achieving their future optimization. This paper comprehensively reviews the recent advancements in infrared optoelectronic sensors. Firstly, their working mechanisms are elucidated. Then, the key metrics for evaluating an infrared optoelectronic sensor are introduced. Subsequently, an overview of promising materials and nanostructures for high-performance infrared optoelectronic sensors, along with the performances of state-of-the-art devices, is presented. Finally, the challenges facing infrared optoelectronic sensors are posed, and some perspectives for the optimization of infrared optoelectronic sensors are discussed, thereby paving the way for the development of future infrared optoelectronic sensors.

Facilely Fabricated Zero-Bias Silicon-Based Plasmonic Photodetector in the Near-Infrared Region with a Schottky Barrier Properly Controlled by Nanoalloys

Plasmonic Schottky devices have attracted considerable attention for use in practical applications based on photoelectric conversion, because they enable light to be harvested below the bandgap of semiconductors. In particular, silicon-based (Si) plasmonic Schottky devices have great potential for useful photodetection in the near-infrared region. However, the internal quantum efficiency (IQE) values of previously reported devices are low because the Schottky barrier is excessively high. Here, we are the first to develop AuAg nanoalloy-n-type Si plasmonic Schottky devices by cathodic arc plasma deposition. Interestingly, it is found that a novel nanostructure, which leads to the improvement of responsivities, is formed. Moreover, these plasmonic nanostructures can be fabricated in only ∼1 min. The fabricated AuAg nanoparticle-film structure enables proper control of the Schottky barrier height and increases the area of the Schottky interface for electron transfer. As a result, the considerably enhanced IQE of our device at a telecommunication wavelength of 1310 nm (1550 nm) without external bias is 4.6 (6.5) times higher than those in previous reports, and these responsivities are a record high. This approach can be applied to realize efficient photodetection in the NIR region and extend the use of light below the bandgap of semiconductors. This paves the way for future application advancements in a variety of fields, including photodetection, imaging, photovoltaics, and photochemistry.

Novel Ag-modified vanadate nanosheets for determination of small organic molecules with laser desorption ionization mass spectrometry

Laser desorption ionization mass spectrometry (LDI-MS) aroused intensive concerns for the merits of label-free and high-throughput analysis. Here, we designed a silver nanoparticles (AgNP)-modified indium vanadate nanosheets with doping samarium (AgNP@InVO4:Sm) nanosheets. The developed AgNP@InVO4:Sm nanosheets (AIVON) were synthesized based on the microemulsion-mediated solvothermal method and ultraviolet-assisted in situ formation of AgNP, then for the first time applied as a matrix in LDI-MS analysis. With the advantages including enhanced MS signal, little matrix-related background, high reproducibility, and good salt tolerance, AIVON exhibited much better prospect than non-modified indium vanadate nanosheets with doping samarium (IVON) and traditional organic matrix, thus allowing sensitive MS detection for a wide range of low-molecular-weight (LMW) molecules. Moreover, by coupling with headspace sampling thin-film microextraction (TFME), a kind of representative pollutant chlorophenols were identified and quantified via AIVON-assisted LDI-MS in environmental and biological samples. Volatile LMW pollutants could be preconcentrated after TFME, hence a sensitive and rapid assay with negligible sample matrix effect was realized by using AIVON-assisted LDI-MS. It is anticipated that this novel nano-matrix AIVON and the proposed TFME coupling detection strategy were of competitive merits for LDI-MS analysis in the fields of environment, biomedicine, and agriculture.

Synergistic-potential engineering enables high-efficiency graphene photodetectors for near- to mid-infrared light

High quantum efficiency and wide-band detection capability are the major thrusts of infrared sensing technology. However, bulk materials with high efficiency have consistently encountered challenges in integration and operational complexity. Meanwhile, two-dimensional (2D) semimetal materials with unique zero-bandgap structures are constrained by the bottleneck of intrinsic quantum efficiency. Here, we report a near-mid infrared ultra-miniaturized graphene photodetector with configurable 2D potential well. The 2D potential well constructed by dielectric structures can spatially (laterally and vertically) produce a strong trapping force on the photogenerated carriers in graphene and inhibit their recombination, thereby improving the external quantum efficiency (EQE) and photogain of the device with wavelength-immunity, which enable a high responsivity of 0.2 A/W-38 A/W across a broad infrared detection band from 1.55 to 11 µm. Thereafter, a room-temperature detectivity approaching 1 × 109 cm Hz1/2 W-1 is obtained under blackbody radiation. Furthermore, a synergistic effect of electric and light field in the 2D potential well enables high-efficiency polarization-sensitive detection at tunable wavelengths. Our strategy opens up alternative possibilities for easy fabrication, high-performance and multifunctional infrared photodetectors.

Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface

Recently, a step-flow growth mode has been proposed to break the inherent molybdenum disulfide (MoS2) crystal domain bimodality and yield a single-crystalline MoS2 monolayer on commonly employed sapphire substrates. This work reveals an alternative growth mechanism during the metal-organic chemical vapor deposition (MOCVD) of a single-crystalline MoS2 monolayer through anisotropic 2D crystal growth. During early growth stages, the epitaxial symmetry and commensurability of sapphire terraces rather than the sapphire step inclination ultimately govern the MoS2 crystal orientation. Strikingly, as the MoS2 crystals continue to grow laterally, the sapphire steps transform the MoS2 crystal geometry into diamond-shaped domains presumably by anisotropic diffusion of ad-species and facet development. Even though these MoS2 domains nucleate on sapphire with predominantly bimodal 0 and 60° azimuthal rotation, the individual domains reach lateral dimensions of up to 200 nm before merging seamlessly into a single-crystalline MoS2 monolayer upon coalescence. Plan-view transmission electron microscopy reveals the single-crystalline nature across 50 μm by 50 μm inspection areas. As a result, the median carrier mobility of MoS2 monolayers peaks at 25 cm2 V-1 s-1 with the highest value reaching 28 cm2 V-1 s-1. This work details synthesis-structure correlations and the possibilities to tune the structure and material properties through substrate topography toward various applications in nanoelectronics, catalysis, and nanotechnology. Moreover, shape modulation through anisotropic growth phenomena on stepped surfaces can provide opportunities for nanopatterning for a wide range of materials.

Ultrasensitive Room Temperature Infrared Photodetection Using a Narrow Bandgap Conjugated Polymer

Photodetectors operating across the short-, mid-, and long-wave infrared (SWIR-LWIR, λ = 1-14 µm) underpin modern science, technology, and society in profound ways. Narrow bandgap semiconductors that form the basis for these devices require complex manufacturing, high costs, cooling, and lack compatibility with silicon electronics, attributes that remain prohibitive for their widespread usage and the development of emerging technologies. Here, a photoconductive detector, fabricated using a solution-processed narrow bandgap conjugated polymer is demonstrated that enables charge carrier generation in the infrared and ultrasensitive SWIR-LWIR photodetection at room temperature. Devices demonstrate an ultralow electronic noise that enables outstanding performance from a simple, monolithic device enabling a high detectivity (D*, the figure of merit for detector sensitivity) >2.44 × 109 Jones (cm Hz1/2  W-1 ) using the ultralow flux of a blackbody that mirrors the background emission of objects. These attributes, ease of fabrication, low dark current characteristics, and highly sensitive operation overcome major limitations inherent within modern narrow-bandgap semiconductors, demonstrate practical utility, and suggest that uncooled detectivities superior to many inorganic devices can be achieved at high operating temperatures.

Decoding the Self-Assembly Plasmonic Interface Structure in a PbS Colloidal Quantum Dot Solid for a Photodetector

Hybrid plasmonic nanostructures have gained enormous attention in a variety of optoelectronic devices due to their surface plasmon resonance properties. Self-assembled hybrid metal/quantum dot (QD) architectures offer a means of coupling the properties of plasmonics and QDs to photodetectors, thereby modifying their functionality. The arrangement and localization of hybrid nanostructures have an impact on exciton trapping and light harvesting. Here, we present a hybrid structure consisting of self-assembled gold nanospheres (Au NSs) embedded in a solid matrix of PbS QDs for mapping the interface structures and the motion of charge carriers. Grazing-incidence small-angle X-ray scattering is utilized to analyze the localization and spacing of the Au NSs within the hybrid structure. Furthermore, by correlating the morphology of the Au NSs in the hybrid structure with the corresponding differences observed in the performance of photodetectors, we are able to determine the impact of interface charge carrier dynamics in the coupling structure. From the perspective of architecture, our study provides insights into the performance improvement of optoelectronic devices.

Functionalizing nanophotonic structures with 2D van der Waals materials

The integration of two-dimensional (2D) van der Waals materials with nanostructures has triggered a wide spectrum of optical and optoelectronic applications. Photonic structures of conventional materials typically lack efficient reconfigurability or multifunctionality. Atomically thin 2D materials can thus generate new functionality and reconfigurability for a well-established library of photonic structures such as integrated waveguides, optical fibers, photonic crystals, and metasurfaces, to name a few. Meanwhile, the interaction between light and van der Waals materials can be drastically enhanced as well by leveraging micro-cavities or resonators with high optical confinement. The unique van der Waals surfaces of the 2D materials enable handiness in transfer and mixing with various prefabricated photonic templates with high degrees of freedom, functionalizing as the optical gain, modulation, sensing, or plasmonic media for diverse applications. Here, we review recent advances in synergizing 2D materials to nanophotonic structures for prototyping novel functionality or performance enhancements. Challenges in scalable 2D materials preparations and transfer, as well as emerging opportunities in integrating van der Waals building blocks beyond 2D materials are also discussed.

Polarization-Sensitive, Self-Powered, and Broadband Semimetal MoTe2/MoS2 van der Waals Heterojunction for Photodetection and Imaging

The emerging type II Weyl semimetal 1T' MoTe2 as a promising material in polarization-sensitive photodetectors has aroused much attention due to its narrow bandgap and intrinsic in-plane anisotropic crystal structure. However, the semimetal properties lead to a large dark current and a low response. Herein, we demonstrate for the first time an all-2D semimetal MoTe2/MoS2 van der Waals (vdWs) heterojunction to improve the performance of the photodetectors and realize polarization-sensitive, self-powered, and broadband photodetection and imaging. Owing to the built-in electric field of the heterojunction, the device achieves a self-powered photoresponse ranging from 520 to 1550 nm. Under 915 nm light illumination, the device demonstrates outstanding performance, including a high responsivity of 79 mA/W, a specific detectivity of 1.2 × 1010 Jones, a fast rise/decay time of 180/202 μs, and a high on/off ratio of 1.3 × 10.3 Wavelength-dependent photocurrent anisotropic ratio is revealed to vary from 1.10 at 638 nm to 2.24 at 1550 nm. Furthermore, we demonstrate the polarization imaging capabilities of the device in scattering surroundings, and the DoLP and AoLP images achieve 78% and 112% contrast enhancement, respectively, compared to the S0. This work opens up new avenues to develop anisotropic semimetals heterojunction photodetectors for high-performance polarization-sensitive photodetection and next-generation polarized imaging.

Simultaneous Control of Spectral And Directional Emissivity with Gradient Epsilon-Near-Zero InAs Photonic Structures

Controlling both the spectral bandwidth and directionality of emitted thermal radiation is a fundamental challenge in contemporary photonics. Recent work has shown that materials with a spatial gradient in the frequency range of their epsilon-near-zero (ENZ) response can support broad spectrum directionality in their emissivity, enabling high total radiance to specific angles of incidence. However, this capability is limited spectrally and directionally by the availability of materials with phonon-polariton resonances over long-wave infrared wavelengths. Here, an approach is designed and experimentally demonstrated using doped III-V semiconductors that can simultaneously tailor spectral peak, bandwidth, and directionality of infrared emissivity. InAs-based gradient ENZ photonic structures that exhibit broadband directional emission with varying spectral bandwidths and directional ranges as a function of their doping concentration profile and thickness are epitaxially grown and characterized. Due to its easy-to-fabricate geometry, it is believed that this approach provides a versatile photonic platform to dynamically control broadband spectral and directional emissivity for a range of emerging applications in heat transfer and infrared sensing.

Plasmonic Sensors: A New Frontier in Nanotechnology

Plasmonics is the study of surface plasmons formed by the interaction of incident light with electrons to form a surface-bound electromagnetic wave [...].