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Yu J, Han W, Suleiman AA, Han S, Miao N, Ling FCC. Recent Advances on Pulsed Laser Deposition of Large-Scale Thin Films. SMALL METHODS 2024; 8:e2301282. [PMID: 38084465 DOI: 10.1002/smtd.202301282] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2023] [Revised: 11/22/2023] [Indexed: 07/21/2024]
Abstract
2D thin films, possessing atomically thin thickness, are emerging as promising candidates for next-generation electronic devices, due to their novel properties and high performance. In the early years, a wide variety of 2D materials are prepared using several methods (mechanical/liquid exfoliation, chemical vapor deposition, etc.). However, the limited size of 2D flakes hinders their fundamental research and device applications, and hence the effective large-scale preparation of 2D films is still challenging. Recently, pulsed laser deposition (PLD) has appeared to be an impactful method for wafer-scale growth of 2D films, owing to target-maintained stoichiometry, high growth rate, and efficiency. In this review, the recent advances on the PLD preparation of 2D films are summarized, including the growth mechanisms, strategies, and materials classification. First, efficacious strategies of PLD growth are highlighted. Then, the growth, characterization, and device applications of various 2D films are presented, such as graphene, h-BN, MoS2, BP, oxide, perovskite, semi-metal, etc. Finally, the potential challenges and further research directions of PLD technique is envisioned.
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Affiliation(s)
- Jing Yu
- Department of Physics, The University of Hong Kong, Hong Kong, 999077, P. R. China
- Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Wei Han
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, P. R. China
- School of Microelectronics, Hubei University, Wuhan, 430062, P. R. China
| | - Abdulsalam Aji Suleiman
- Institute of Materials Science and Nanotechnology, Bilkent University UNAM, Ankara, 06800, Turkey
| | - Siyu Han
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Naihua Miao
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
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2
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Bisht P, Belle BD, Aggarwal P, Ghosh A, Xing W, Kaur N, Singh JP, Mehta BR. Gas Sensing Properties of PLD Grown 2D SnS Film: Effect of Film Thickness, Metal Nanoparticle Decoration, and In Situ KPFM Investigation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307037. [PMID: 38178272 DOI: 10.1002/smll.202307037] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2023] [Revised: 11/20/2023] [Indexed: 01/06/2024]
Abstract
This study employs novel growth methodologies and surface sensitization with metal nanoparticles to enhance and manipulate gas sensing behavior of two-dimensional (2D)SnS film. Growth of SnS films is optimized by varying substrate temperature and laser pulses during pulsed laser deposition (PLD). Thereafter, palladium (Pd), gold (Au), and silver (Ag) nanoparticles are decorated on as-grown film using gas-phase synthesis techniques. X-ray diffraction (XRD), Raman spectroscopy, and Field-emission scanning electron microscopy (FESEM) elucidate the growth evolution of SnS and the effect of nanoparticle decoration. X-ray photoelectron spectroscopy (XPS) analyses the chemical state and composition. Pristine SnS, Ag, and Au decorated SnS films are sensitive and selective toward NO2 at room temperature (RT). Ag nanoparticle increases the response of pristine SnS from 48 to 138% toward 2 ppm NO2, which indicates electronic and chemical sensitization effect of Ag. Pd decoration on SnS tunes its selectivity toward H2 gas with a response of 55% toward 70 ppm H2 and limit of detection (LOD) < 1 ppm. In situ Kelvin probe force microscopy (KPFM) maps the work function changes, revealing catalytic effect of Ag toward NO2 in Ag-decorated SnS and direct charge transfer between Pd and SnS during H2 exposure in Pd-decorated SnS.
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Affiliation(s)
- Prashant Bisht
- Department of Physics, Indian Institute of Technology Delhi, New Delhi, 110016, India
| | - Branson D Belle
- SINTEF INDUSTRY, Materials Physics, Forskningsveien 1, Oslo, NO - 0373, Norway
| | - Pallavi Aggarwal
- Department of Physics, Indian Institute of Technology Delhi, New Delhi, 110016, India
| | - Abhishek Ghosh
- Department of Physics, Indian Institute of Technology Delhi, New Delhi, 110016, India
| | - Wen Xing
- SINTEF INDUSTRY, Materials Physics, Forskningsveien 1, Oslo, NO - 0373, Norway
| | - Narinder Kaur
- Department of Physics, Indian Institute of Technology Delhi, New Delhi, 110016, India
| | - J P Singh
- Department of Physics, Indian Institute of Technology Delhi, New Delhi, 110016, India
| | - B R Mehta
- Department of Physics, Indian Institute of Technology Delhi, New Delhi, 110016, India
- Directorate of Research, Innovation and Development, Jaypee Institute of Information Technology, Noida, Uttar Pradesh, 201309, India
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3
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Harris SB, Biswas A, Yun SJ, Roccapriore KM, Rouleau CM, Puretzky AA, Vasudevan RK, Geohegan DB, Xiao K. Autonomous Synthesis of Thin Film Materials with Pulsed Laser Deposition Enabled by In Situ Spectroscopy and Automation. SMALL METHODS 2024:e2301763. [PMID: 38678523 DOI: 10.1002/smtd.202301763] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2023] [Revised: 04/10/2024] [Indexed: 05/01/2024]
Abstract
Autonomous systems that combine synthesis, characterization, and artificial intelligence can greatly accelerate the discovery and optimization of materials, however platforms for growth of macroscale thin films by physical vapor deposition techniques have lagged far behind others. Here this study demonstrates autonomous synthesis by pulsed laser deposition (PLD), a highly versatile synthesis technique, in the growth of ultrathin WSe2 films. By combing the automation of PLD synthesis and in situ diagnostic feedback with a high-throughput methodology, this study demonstrates a workflow and platform which uses Gaussian process regression and Bayesian optimization to autonomously identify growth regimes for WSe2 films based on Raman spectral criteria by efficiently sampling 0.25% of the chosen 4D parameter space. With throughputs at least 10x faster than traditional PLD workflows, this platform and workflow enables the accelerated discovery and autonomous optimization of the vast number of materials that can be synthesized by PLD.
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Affiliation(s)
- Sumner B Harris
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Arpan Biswas
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Seok Joon Yun
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Kevin M Roccapriore
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Christopher M Rouleau
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Rama K Vasudevan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - David B Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
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4
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Yin L, Cheng R, Ding J, Jiang J, Hou Y, Feng X, Wen Y, He J. Two-Dimensional Semiconductors and Transistors for Future Integrated Circuits. ACS NANO 2024; 18:7739-7768. [PMID: 38456396 DOI: 10.1021/acsnano.3c10900] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Silicon transistors are approaching their physical limit, calling for the emergence of a technological revolution. As the acknowledged ultimate version of transistor channels, 2D semiconductors are of interest for the development of post-Moore electronics due to their useful properties and all-in-one potentials. Here, the promise and current status of 2D semiconductors and transistors are reviewed, from materials and devices to integrated applications. First, we outline the evolution and challenges of silicon-based integrated circuits, followed by a detailed discussion on the properties and preparation strategies of 2D semiconductors and van der Waals heterostructures. Subsequently, the significant progress of 2D transistors, including device optimization, large-scale integration, and unconventional devices, are presented. We also examine 2D semiconductors for advanced heterogeneous and multifunctional integration beyond CMOS. Finally, the key technical challenges and potential strategies for 2D transistors and integrated circuits are also discussed. We envision that the field of 2D semiconductors and transistors could yield substantial progress in the upcoming years and hope this review will trigger the interest of scientists planning their next experiment.
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Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jiahui Ding
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yutang Hou
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
- Wuhan Institute of Quantum Technology, Wuhan 430206, People's Republic of China
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5
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Jaiswal S, Fathi-Hafshejani P, Yakupoglu B, Boebinger MG, Azam N, Unocic RR, Hamilton MC, Mahjouri-Samani M. Wafer-Scale Synthesis of 2D Materials by an Amorphous Phase-Mediated Crystallization Approach. ACS APPLIED MATERIALS & INTERFACES 2023; 15:39697-39706. [PMID: 37579298 DOI: 10.1021/acsami.3c06009] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
The interest in the wafer-scale growth of two-dimensional (2D) materials, including transition metal dichalcogenides (TMDCs), has been rising for transitioning from lab-scale devices to commercial-scale systems. Among various synthesis techniques, physical vapor deposition, such as pulsed laser deposition (PLD), has shown promise for the wafer-scale growth of 2D materials. However, due to the high volatility of chalcogen atoms (e.g., S and Se), films deposited by PLD usually suffer from a lack of stoichiometry and chalcogen deficiency. To mitigate this issue, excess chalcogen is necessary during the deposition, which results in problems like uniformity or not being repeatable. This study demonstrates a condensed-phase or amorphous phase-mediated crystallization (APMC) approach for the wafer-scale synthesis of 2D materials. This method uses a room-temperature PLD process for the deposition and formation of amorphous precursors with controlled thicknesses, followed by a post-deposition crystallization process to convert the amorphous materials to crystalline structures. This approach maintains the stoichiometry of the deposited materials throughout the deposition and crystallization process and enables the large-scale synthesis of crystalline 2D materials (e.g., MoS2 and WSe2) on Si/SiO2 substrates, which is critical for future wafer-scale electronics. We show that the thickness of the layers can be digitally controlled by the number of laser pulses during the PLD phase. Optical spectroscopy is used to monitor the crystallization dynamics of amorphous layers as a function of annealing temperature. The crystalline quality, domain sizes, and the number of layers were explored using nanoscale and atomistic characterization (e.g., AFM, STEM, and EDS) along with electrical characterization to explore process-structure-performance relationships. This growth technique is a promising method that could potentially be adopted in conventional semiconductor industries for wafer-scale manufacturing of next-generation electronic and optoelectronic devices.
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Affiliation(s)
- Suman Jaiswal
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States
| | - Parvin Fathi-Hafshejani
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States
| | - Baha Yakupoglu
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States
| | - Matthew G Boebinger
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Nurul Azam
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States
| | - Raymond R Unocic
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Michael C Hamilton
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States
| | - Masoud Mahjouri-Samani
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States
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6
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Azam N, Mahjouri-Samani M. Time-Resolved Growth of 2D WSe 2 Monolayer Crystals. ACS NANO 2023. [PMID: 37339265 DOI: 10.1021/acsnano.3c02280] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2023]
Abstract
Understanding and controlling the growth evolution of atomically thin monolayer two-dimensional (2D) materials such as transition metal dichalcogenides (TMDCs) are vital for next-generation 2D electronics and optoelectronic devices. However, their growth kinetics are not fully observed or well understood due to the bottlenecks associated with the existing synthesis methods. This study demonstrates the time-resolved and ultrafast growth of 2D materials by a laser-based synthesis approach that enables the rapid initiation and termination of the vaporization process during crystal growth. The use of stoichiometric powder (e.g., WSe2) minimizes the complex chemistry during the vaporization and growth process, allowing rapid initiation/termination control over the generated flux. An extensive set of experiments is performed to understand the growth evolution, achieving subsecond growth as low as 10 ms along with a 100 μm/s growth rate on a noncatalytic substrate such as Si/SiO2. Overall, this study allows us to observe and understand the 2D crystal evolution and growth kinetics with time-resolved and subsecond time scales.
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Affiliation(s)
- Nurul Azam
- Electrical and Computer Engineering Department, Auburn University, Auburn, Alabama 36849, United States
| | - Masoud Mahjouri-Samani
- Electrical and Computer Engineering Department, Auburn University, Auburn, Alabama 36849, United States
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7
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D'Agosta P, Tumino F, Russo V, Li Bassi A, Casari CS. Interface coupling in Au-supported MoS 2-WS 2 heterobilayers grown by pulsed laser deposition. NANOSCALE 2023; 15:7493-7501. [PMID: 37017209 PMCID: PMC10134180 DOI: 10.1039/d3nr00614j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/09/2023] [Accepted: 03/27/2023] [Indexed: 06/19/2023]
Abstract
Van der Waals heterostructures of transition metal dichalcogenides (TMDs) are promising systems for engineering functional layered 2D materials with tailored properties. In this work, we study the growth of WS2/MoS2 and MoS2/WS2 heterobilayers by pulsed laser deposition (PLD) under ultra-high vacuum conditions. Using Au(111) as growth substrate, we investigated the heterobilayer morphology and structure at the nanoscale by in situ scanning tunneling microscopy. Our experiments show that the heterostructure growth can be controlled with high coverage and thickness sensitivity by tuning the number of laser pulses in the PLD process. Raman spectroscopy complemented our investigation, revealing the effect of the interaction with the metallic substrate on the TMD vibrational properties and a strong interlayer coupling between the MoS2 and WS2 layers. The transfer of the heterobilayers on a silica substrate via a wet etching process shows the possibility to decouple them from the native metallic substrate and confirms that the interlayer coupling is not substrate-dependent. This work highlights the potential of the PLD technique as a method to grow TMD heterostructures, opening to new perspectives in the synthesis of complex 2D layered materials.
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Affiliation(s)
- Paolo D'Agosta
- Department of Energy, Politecnico di Milano, via G. Ponzio 34/3, I-20133 Milan, Italy.
| | - Francesco Tumino
- Department of Energy, Politecnico di Milano, via G. Ponzio 34/3, I-20133 Milan, Italy.
- Department of Physics, Engineering Physics and Astronomy, Queen's University, 64 Bader Lane, Kingston, ON, Canada, K7L 3N6
| | - Valeria Russo
- Department of Energy, Politecnico di Milano, via G. Ponzio 34/3, I-20133 Milan, Italy.
| | - Andrea Li Bassi
- Department of Energy, Politecnico di Milano, via G. Ponzio 34/3, I-20133 Milan, Italy.
| | - Carlo S Casari
- Department of Energy, Politecnico di Milano, via G. Ponzio 34/3, I-20133 Milan, Italy.
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8
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Jung Y, Ryu H, Kim H, Moon D, Joo J, Hong SC, Kim J, Lee GH. Nucleation and Growth of Monolayer MoS 2 at Multisteps of MoO 2 Crystals by Sulfurization. ACS NANO 2023; 17:7865-7871. [PMID: 37052379 DOI: 10.1021/acsnano.3c01150] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Two-dimensional (2D) materials and their heterostructures are promising for next-generation optoelectronics, spintronics, valleytronics, and electronics. Despite recent progress in various growth studies of 2D materials, mechanical exfoliation of flakes is still the most common method to obtain high-quality 2D materials because precisely controlling material growth and synthesizing a single domain during the growth process of 2D materials, for the desired shape and quality, is challenging. Here, we report the nucleation and growth behaviors of monolayer MoS2 by sulfurizing a faceted monoclinic MoO2 crystal. The MoS2 layers nucleated at the thickness steps of the MoO2 crystal and grew epitaxially with crystalline correlation to the MoO2 surface. The epitaxially grown MoS2 layer expands outwardly on the SiO2 substrate, resulting in a monolayer single-crystal film, despite multiple nucleations of MoS2 layers on the MoO2 surface owing to several thickness steps. Although the photoluminescence of MoS2 is quenched owing to efficient charge transfer between MoS2 and metallic MoO2, the MoS2 stretched out to the SiO2 substrate shows a high carrier mobility of (15 cm2 V-1 s-1), indicating that a high-quality monolayer MoS2 film can be grown using the MoO2 crystal as a seed and precursor. Our work shows a method to grow high-quality MoS2 using a faceted MoO2 crystal and provides a deeper understanding of the nucleation and growth of 2D materials on a step-like surface.
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Affiliation(s)
- Yeonjoon Jung
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
| | - Huije Ryu
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
| | - Hangyel Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
| | - Donghoon Moon
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
| | - Jaewoong Joo
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
| | - Seong Chul Hong
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
| | - Jinwoo Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
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9
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Yang R, Fan Y, Zhang Y, Mei L, Zhu R, Qin J, Hu J, Chen Z, Hau Ng Y, Voiry D, Li S, Lu Q, Wang Q, Yu JC, Zeng Z. 2D Transition Metal Dichalcogenides for Photocatalysis. Angew Chem Int Ed Engl 2023; 62:e202218016. [PMID: 36593736 DOI: 10.1002/anie.202218016] [Citation(s) in RCA: 45] [Impact Index Per Article: 45.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Revised: 12/29/2022] [Accepted: 01/02/2023] [Indexed: 01/04/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs), a rising star in the post-graphene era, are fundamentally and technologically intriguing for photocatalysis. Their extraordinary electronic, optical, and chemical properties endow them as promising materials for effectively harvesting light and catalyzing the redox reaction in photocatalysis. Here, we present a tutorial-style review of the field of 2D TMDs for photocatalysis to educate researchers (especially the new-comers), which begins with a brief introduction of the fundamentals of 2D TMDs and photocatalysis along with the synthesis of this type of material, then look deeply into the merits of 2D TMDs as co-catalysts and active photocatalysts, followed by an overview of the challenges and corresponding strategies of 2D TMDs for photocatalysis, and finally look ahead this topic.
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Affiliation(s)
- Ruijie Yang
- Department of Materials Science and Engineering, State Key Laboratory of Marine Pollution, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, P. R. China.,Department of Chemical and Petroleum Engineering, University of Calgary, 2500 University Drive, NW, Calgary, Alberta, T2N 1N4, Canada
| | - Yingying Fan
- Department of Materials Science and Engineering, State Key Laboratory of Marine Pollution, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, P. R. China.,Department of Chemical and Petroleum Engineering, University of Calgary, 2500 University Drive, NW, Calgary, Alberta, T2N 1N4, Canada
| | - Yuefeng Zhang
- Department of Materials Science and Engineering, State Key Laboratory of Marine Pollution, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, P. R. China
| | - Liang Mei
- Department of Materials Science and Engineering, State Key Laboratory of Marine Pollution, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, P. R. China
| | - Rongshu Zhu
- State Key Lab of Urban Water Resource and Environment, School of Civil and Environmental Engineering, Harbin Institute of Technology Shenzhen, Shenzhen, 518055, P. R. China
| | - Jiaqian Qin
- Center of Excellence in Responsive Wearable Materials, Metallurgy and Materials Science Research Institute, Chulalongkorn University, Bangkok, 10330, Thailand
| | - Jinguang Hu
- Department of Chemical and Petroleum Engineering, University of Calgary, 2500 University Drive, NW, Calgary, Alberta, T2N 1N4, Canada
| | - Zhangxing Chen
- Department of Chemical and Petroleum Engineering, University of Calgary, 2500 University Drive, NW, Calgary, Alberta, T2N 1N4, Canada
| | - Yun Hau Ng
- Low-Carbon and Climate Impact Research Centre, School of Energy and Environment, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong SAR, P. R. China
| | - Damien Voiry
- Institut Européen des Membranes, IEM, UMR 5635, Université Montpellier, ENSCM, CNRS, Montpellier, France
| | - Shuang Li
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, China
| | - Qingye Lu
- Department of Chemical and Petroleum Engineering, University of Calgary, 2500 University Drive, NW, Calgary, Alberta, T2N 1N4, Canada
| | - Qian Wang
- Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan.,Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan
| | - Jimmy C Yu
- Department of Chemistry and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong 999077, China
| | - Zhiyuan Zeng
- Department of Materials Science and Engineering, State Key Laboratory of Marine Pollution, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, P. R. China.,Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, China
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10
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Thoutam LR, Mathew R, Ajayan J, Tayal S, Nair SV. A critical review of fabrication challenges and reliability issues in top/bottom gated MoS 2field-effect transistors. NANOTECHNOLOGY 2023; 34:232001. [PMID: 36731113 DOI: 10.1088/1361-6528/acb826] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Accepted: 02/02/2023] [Indexed: 06/18/2023]
Abstract
The voyage of semiconductor industry to decrease the size of transistors to achieve superior device performance seems to near its physical dimensional limitations. The quest is on to explore emerging material systems that offer dimensional scaling to match the silicon- based technologies. The discovery of atomic flat two-dimensional materials has opened up a completely new avenue to fabricate transistors at sub-10 nanometer level which has the potential to compete with modern silicon-based semiconductor devices. Molybdenum disulfide (MoS2) is a two-dimensional layered material with novel semiconducting properties at atomic level seems like a promising candidate that can possibly meet the expectation of Moore's law. This review discusses the various 'fabrication challenges' in making MoS2based electronic devices from start to finish. The review outlines the intricate challenges of substrate selection and various synthesis methods of mono layer and few-layer MoS2. The review focuses on the various techniques and methods to minimize interface defect density at substrate/MoS2interface for optimum MoS2-based device performance. The tunable band-gap of MoS2with varying thickness presents a unique opportunity for contact engineering to mitigate the contact resistance issue using different elemental metals. In this work, we present a comprehensive overview of different types of contact materials with myriad geometries that show a profound impact on device performance. The choice of different insulating/dielectric gate oxides on MoS2in co-planar and vertical geometry is critically reviewed and the physical feasibility of the same is discussed. The experimental constraints of different encapsulation techniques on MoS2and its effect on structural and electronic properties are extensively discussed.
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Affiliation(s)
- Laxman Raju Thoutam
- Amrita School of Nanosciences and Molecular Medicine, Amrita Vishwa Vidyapeetham, Ponekkara, Kochi 682041, India
| | - Ribu Mathew
- School of Electrical & Electronics Engineering, VIT Bhopal University, Bhopal, 466114, India
| | - J Ajayan
- Department of Electronics and Communication Engineering, SR University, Warangal, 506371, India
| | - Shubham Tayal
- Department of Electronics and Communication Engineering, SR University, Warangal, 506371, India
| | - Shantikumar V Nair
- Amrita School of Nanosciences and Molecular Medicine, Amrita Vishwa Vidyapeetham, Ponekkara, Kochi 682041, India
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11
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Harris SB, Lin YC, Puretzky AA, Liang L, Dyck O, Berlijn T, Eres G, Rouleau CM, Xiao K, Geohegan DB. Real-Time Diagnostics of 2D Crystal Transformations by Pulsed Laser Deposition: Controlled Synthesis of Janus WSSe Monolayers and Alloys. ACS NANO 2023; 17:2472-2486. [PMID: 36649648 DOI: 10.1021/acsnano.2c09952] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Energetic processing methods such as hyperthermal implantation hold special promise to achieve the precision synthesis of metastable two-dimensional (2D) materials such as Janus monolayers; however, they require precise control. Here, we report a feedback approach to reveal and control the transformation pathways in materials synthesis by pulsed laser deposition (PLD) and apply it to investigate the transformation kinetics of monolayer WS2 crystals into Janus WSSe and WSe2 by implantation of Se clusters with different maximum kinetic energies (<42 eV/Se-atom) generated by laser ablation of a Se target. Real-time Raman spectroscopy and photoluminescence are used to assess the structure, composition, and optoelectronic quality of the monolayer crystal as it is implanted with well-controlled fluxes of selenium for different kinetic energies that are regulated with in situ ICCD imaging, ion probe, and spectroscopy diagnostics. First-principles calculations, XPS, and atomic-resolution HAADF STEM imaging are used to understand the intermediate alloy compositions and their vibrational modes to identify transformation pathways. The real-time kinetics measurements reveal highly selective top-layer conversion as WS2 transforms through WS2(1-x)Se2x alloys to WSe2 and provide the means to adjust processing conditions to achieve fractional and complete Janus WSSe monolayers as metastable transition states. The general approach demonstrates a real-time feedback method to achieve Janus layers or other metastable alloys of the desired composition, and a general means to adjust the structure and quality of materials grown by PLD, addressing priority research directions for precision synthesis with real-time adaptive control.
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Affiliation(s)
- Sumner B Harris
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Yu-Chuan Lin
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania16802, United States
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Ondrej Dyck
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Tom Berlijn
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Gyula Eres
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Christopher M Rouleau
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - David B Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
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12
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Wadhwa R, Thapa S, Deswal S, Kumar P, Kumar M. Wafer-scale controlled growth of MoS 2by magnetron sputtering: from in-plane to inter-connected vertically-aligned flakes. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:124002. [PMID: 36657174 DOI: 10.1088/1361-648x/acb4d1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2022] [Accepted: 01/19/2023] [Indexed: 06/17/2023]
Abstract
Recently, Molybdenum disulfide (MoS2) has attracted great attention due to its unique characteristics and potential applications in various fields. The advancements in the field have substantially improved at the laboratory scale however, a synthesis approach that produces large area growth of MoS2on a wafer scale is the key requirement for the realization of commercial two-dimensional (2D) technology. Herein, we report tunable MoS2growth with varied morphologies via radio frequency magnetron sputtering by controlling growth parameters. The controlled growth from in-plane to vertically-aligned (VA) MoS2flakes has been achieved on a variety of substrates (Si, Si/SiO2, sapphire, quartz, and carbon fiber). Moreover, the growth of VA MoS2is highly reproducible and is fabricated on a wafer scale. The flakes synthesized on the wafer show high uniformity, which is corroborated by the spatial mapping using Raman over the entire 2-inch Si/SiO2wafer. The detailed morphological, structural, and spectroscopic analysis reveals the transition from in-plane MoS2to VA MoS2flakes. This work presents a facile approach to directly synthesize layered materials by sputtering technique on wafer scale. This paves the way for designing mass production of high-quality 2D materials, which will advance their practical applications by integration into device architectures in various fields.
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Affiliation(s)
- Riya Wadhwa
- Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab 140001, India
| | - Sanjeev Thapa
- Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab 140001, India
- Department of Electronics and Computer Engineering, Institute of Engineering, Tribhuvan University, Lalitpur 284403, Nepal
| | - Sonia Deswal
- School of Physical Sciences Indian Institute of Technology Mandi, Mandi, Himachal Pradesh 175005, India
| | - Pradeep Kumar
- School of Physical Sciences Indian Institute of Technology Mandi, Mandi, Himachal Pradesh 175005, India
| | - Mukesh Kumar
- Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab 140001, India
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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14
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Li X, Wang X, Ning J, Wei H, Hao L. Novel Impregnation-Deposition Method to Synthesize a Presulfided MoS 2/Al 2O 3 Catalyst and Its Application in Hydrodesulfurization. ACS OMEGA 2023; 8:2596-2606. [PMID: 36687028 PMCID: PMC9850723 DOI: 10.1021/acsomega.2c07123] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/04/2022] [Accepted: 12/30/2022] [Indexed: 06/17/2023]
Abstract
A novel impregnation-deposition method was applied to prepare presulfided MoS2/Al2O3 catalysts with large surface areas for the application of hydrodesulfurization (HDS). The synthesized catalysts were characterized systematically, and their catalytic performances were evaluated by the HDS of dibenzothiophene (DBT). It is found that the impregnation-deposition method improves the surface area of the synthesized catalysts by eliminating the micropores of the alumina support and adding mesostructured MoS2 particles within the support. Moreover, this method enhances the reducibility of the sulfided Mo species, as characterized by temperature-programed reduction (TPR) and X-ray photoelectron spectroscopy. Compared to the impregnation method, the impregnation-deposition method leads to the formation of more active sites as proved by TPR and CO-Fourier-transform infrared analyses. Hence, the reaction conversion rates and the hydrogenation/direct-desulfurization ratios of the DBT on the catalysts synthesized by the impregnation-deposition method are 1.3 times and 1.5 times as high as those of the catalysts made by the conventional impregnation method, respectively.
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15
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Hwang E, Choi J, Hong S. Emerging laser-assisted vacuum processes for ultra-precision, high-yield manufacturing. NANOSCALE 2022; 14:16065-16076. [PMID: 36278425 DOI: 10.1039/d2nr03649e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Laser technology is a cutting-edge process with a unique photothermal response, precise site selectivity, and remote controllability. Laser technology has recently emerged as a novel tool in the semiconductor, display, and thin film industries by providing additional capabilities to existing high-vacuum equipment. The in situ and in operando laser assistance enables using multiple process environments with a level of complexity unachievable with conventional vacuum equipment. This broadens the usable range of process parameters and directly improves material properties, product precision, and device performance. This review paper examines the recent research trends in laser-assisted vacuum processes (LAVPs) as a vital tool for innovation in next-generation manufacturing processing equipment and addresses the unique characteristics and mechanisms of lasers exclusively used in each study. All the findings suggest that the LAVP can lead to methodological breakthroughs in dry etching, 2D material synthesis, and chemical vapor deposition for optoelectronic devices.
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Affiliation(s)
- Eunseung Hwang
- Department of Mechanical Design Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
- Department of Mechanical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan 15588, Republic of Korea
| | - Joonmyung Choi
- Department of Mechanical Design Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
- Department of Mechanical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan 15588, Republic of Korea
| | - Sukjoon Hong
- Department of Mechanical Design Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
- Department of Mechanical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan 15588, Republic of Korea
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16
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Ding D, Wang S, Xia Y, Li P, He D, Zhang J, Zhao S, Yu G, Zheng Y, Cheng Y, Xie M, Ding F, Jin C. Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate. ACS NANO 2022; 16:17356-17364. [PMID: 36200750 DOI: 10.1021/acsnano.2c08188] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
A mechanistic understanding of interactions between atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., ∼88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., ∼12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, ∼64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (∼36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (∼2.4 Å), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches ∼3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.
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Affiliation(s)
- Degong Ding
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Shuang Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Yipu Xia
- Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong
| | - Pai Li
- Center for Multidimensional Carbon Materials, Institute for Basic Science, School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | - Daliang He
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Junqiu Zhang
- Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong
| | - Sunwen Zhao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Guanghui Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Yonghui Zheng
- Key Laboratory of Polar Materials and Devices and Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Yan Cheng
- Key Laboratory of Polar Materials and Devices and Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Maohai Xie
- Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science, School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | - Chuanhong Jin
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
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17
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Xiong Y, Xu D, Feng Y, Zhang G, Lin P, Chen X. P-Type 2D Semiconductors for Future Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2206939. [PMID: 36245325 DOI: 10.1002/adma.202206939] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Revised: 09/30/2022] [Indexed: 06/16/2023]
Abstract
2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate-control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors-based integrated circuits suitable for future electronics. N-type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p-type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high-speed and low-power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p-type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post-Moore era.
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Affiliation(s)
- Yunhai Xiong
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Duo Xu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yiping Feng
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Guangjie Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Pei Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, China
| | - Xiang Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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18
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Ye Q, Xu D, Cai B, Lu J, Yi H, Ma C, Zheng Z, Yao J, Ouyang G, Yang G. High-performance hierarchical O-SnS/I-ZnIn 2S 4 photodetectors by leveraging the synergy of optical regulation and band tailoring. MATERIALS HORIZONS 2022; 9:2364-2375. [PMID: 35876307 DOI: 10.1039/d2mh00612j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Low light absorption and limited carrier lifetime are critical obstacles inhibiting further performance improvement of 2D layered material (2DLM) based photodetectors, while scalable fabrication is an ongoing challenge prior to commercialization from the lab to market. Herein, wafer-scale SnS/ZIS hierarchical nanofilms, where out-of-plane SnS (O-SnS) is modified onto in-plane ZIS (I-ZIS), have been achieved by pulsed-laser deposition. The derived O-SnS/I-ZIS photodetector exhibits markedly boosted sensitivity as compared to a pristine ZIS device. The synergy of multiple functionalities contributes to the dramatic improvement, including the pronounced light-trapping effect of O-SnS by multiple scattering, the high-efficiency spatial separation of photogenerated electron-hole pairs by a type-II staggered band alignment and the promoted carrier transport enabled by the tailored electronic structure of ZIS. Of note, the unique architecture of O-SnS/I-ZIS can considerably expedite the carrier dynamics, where O-SnS promotes the electron transfer from SnS to ZIS whilst the I-ZIS enables high-speed electron circulation. In addition, the interlayer transition enables the bridging of the effective optical window to telecommunication wavelengths. Moreover, monolithic integration of arrayed devices with satisfactory device-to-device variability has been encompassed and a proof-of-concept imaging application is demonstrated. On the whole, this study depicts a fascinating functional coupling architecture toward implementing chip-scale integrated optoelectronics.
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Affiliation(s)
- Qiaojue Ye
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China
| | - Degao Xu
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Matter Microstructure and Function of Hunan Province, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China.
| | - Biao Cai
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Matter Microstructure and Function of Hunan Province, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China.
| | - Jianting Lu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China.
| | - Huaxin Yi
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China.
| | - Churong Ma
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou, 511443, China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, Guangdong, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China
| | - Gang Ouyang
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Matter Microstructure and Function of Hunan Province, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China.
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China
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19
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Bisht P, Kumar A, Ghosh A, Vullum PE, Sunding MF, Belle BD, Mehta BR. Tailoring the Vertical and Planar Growth of 2D WS 2 Thin Films Using Pulsed Laser Deposition for Enhanced Gas Sensing Properties. ACS APPLIED MATERIALS & INTERFACES 2022; 14:36789-36800. [PMID: 35943092 DOI: 10.1021/acsami.2c07759] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
In this study, pulsed laser deposition has been utilized for the controllable synthesis of WS2 thin films with growth orientation ranging from vertically to horizontally aligned layers, and the effect of growth parameters has been investigated. The growth of thin films on SiO2 substrates at three different pressures (30, 50, and 70 mTorr) and three different temperatures (400, 500, and 600 °C) has been studied. Detailed characterizations carried out on the as-grown layers clearly show the formation of the 2H-WS2 phase and its morphological evolution with deposition conditions. Atomic force microscopy and cross-sectional transmission electron microscopy have been used to deduce the growth mechanism of the vertical and planar films with different deposition parameters. The samples grown with a combination of lower temperatures and higher pressures exhibit a vertical flake-like growth with a flake thickness of ∼2-5 nm. However, at higher temperatures and lower pressures, the film growth is observed to be rather planar. The gas sensing parameters and the underlying mechanism have been observed to be quite different for vertically and horizontally grown layers. The vertical layers showed a selective response toward NO2 gas at room temperature (RT) with a limit of detection less than 50 ppb. In comparison, a very subdued and poor gas sensing response was recorded for the planar film at RT. A large specific area and abundance of active edge sites along with the flat basal plane present in the vertically grown layers seem to be responsible for efficient gas sensing toward NO2.
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Affiliation(s)
- Prashant Bisht
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Arvind Kumar
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Abhishek Ghosh
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Per Erik Vullum
- SINTEF Industry, Høgskoleringen, NO: 57046, Trondheim 7491, Norway
| | | | - Branson D Belle
- SINTEF Industry, Materials Physics, Forskningsveien 1, NO: 0373, Oslo 0314, Norway
| | - Bodh Raj Mehta
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
- Directorate of Research, Innovation and Development, Jaypee Institute of Information Technology, Noida, Uttar Pradesh 201309, India
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20
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Xu X, Guo T, Kim H, Hota MK, Alsaadi RS, Lanza M, Zhang X, Alshareef HN. Growth of 2D Materials at the Wafer Scale. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108258. [PMID: 34860446 DOI: 10.1002/adma.202108258] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 11/29/2021] [Indexed: 06/13/2023]
Abstract
Wafer-scale growth has become a critical bottleneck for scaling up applications of van der Waal (vdW) layered 2D materials in high-end electronics and optoelectronics. Most vdW 2D materials are initially obtained through top-down synthesis methods, such as exfoliation, which can only prepare small flakes on a micrometer scale. Bottom-up growth can enable 2D flake growth over a large area. However, seamless merging of these flakes to form large-area continuous films with well-controlled layer thickness and lattice orientation is still a significant challenge. This review briefly introduces several vdW layered 2D materials covering their lattice structures, representative physical properties, and potential roles in large-scale applications. Then, several methods used to grow vdW layered 2D materials at the wafer scale are reviewed in depth. In particular, three strategies are summarized that enable 2D film growth with a single-crystalline structure over the whole wafer: growth of an isolated domain, growth of unidirectional domains, and conversion of oriented precursors. After that, the progress in using wafer-scale 2D materials in integrated devices and advanced epitaxy is reviewed. Finally, future directions in the growth and scaling of vdW layered 2D materials are discussed.
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Affiliation(s)
- Xiangming Xu
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Tianchao Guo
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Hyunho Kim
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mrinal K Hota
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Rajeh S Alsaadi
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mario Lanza
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xixiang Zhang
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Husam N Alshareef
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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21
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Growth of highly conducting MoS2-xNx thin films with enhanced 1T' phase by pulsed laser deposition and exploration of their nanogenerator application. iScience 2022; 25:103898. [PMID: 35243256 PMCID: PMC8881714 DOI: 10.1016/j.isci.2022.103898] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/06/2021] [Revised: 01/15/2022] [Accepted: 02/05/2022] [Indexed: 02/02/2023] Open
Abstract
High-quality growth of MoS2-xNx films is realized on single-crystal c-Al2O3 substrates by the pulsed laser deposition (PLD) in ammonia rendering highly stable and tunable 1Tʹ/2H biphasic constitution. Raman spectroscopy reveals systematic enhancement of 1Tʹ phase component due to the incorporation of covalently bonded N-doping in MoS2 lattice, inducing compressive strain. Interestingly, the film deposited at 300 mTorr NH3 shows ∼80% 1Tʹ phase. The transport measurements performed on MoS2-xNx films deposited at 300 mTorr NH3 display very low room temperature resistivity of 0.03 mΩ-cm which is 100 times enhanced over the undoped MoS2 grown under comparable conditions. A triboelectric nanogenerator (TENG) device containing biphasic MoS2-xNx film as an electron acceptor exhibits a clear enhancement in the output voltage as compared to the pristine MoS2. Device architecture, p-type N doping in MoS2 lattice, favorably increased work-function, multiphasic component of MoS2, and increased surface roughness synergistically contribute to superior TENG performance. MoS2-xNx films grown on c-Al2O3 and ITO/PET by pulsed laser deposition in NH3 p-type doping with high conductivity and 1T’+2H dual polymorph state is realized Increased work-function of MoS2-xNx films over pristine MoS2 is realized Impressive Triboelectric Nanogenerator application is demonstrated with MoS2-xNx
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22
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Xing X, Qu Z, Ge L, Sun X, Li F. Controllable synthesis of NiCo layered double hydroxide sheets on laser-induced graphene as electrodes for high-performance supercapacitors. CrystEngComm 2022. [DOI: 10.1039/d2ce00466f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
NiCo-LDH@P12-LIG electrodes are prepared using the laser-induced graphene under hydrothermal conditions, showing an areal specific capacitance of 2072 mF cm−2.
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Affiliation(s)
- Xinru Xing
- College of Chemistry and Pharmaceutical Sciences, Qingdao Agricultural University, ChangCheng Road 700, Chengyang, Qingdao 266109, People's Republic of China
| | - Zijie Qu
- College of Chemistry and Pharmaceutical Sciences, Qingdao Agricultural University, ChangCheng Road 700, Chengyang, Qingdao 266109, People's Republic of China
| | - Lei Ge
- College of Chemistry and Pharmaceutical Sciences, Qingdao Agricultural University, ChangCheng Road 700, Chengyang, Qingdao 266109, People's Republic of China
| | - Xinzhi Sun
- College of Chemistry and Pharmaceutical Sciences, Qingdao Agricultural University, ChangCheng Road 700, Chengyang, Qingdao 266109, People's Republic of China
| | - Feng Li
- College of Chemistry and Pharmaceutical Sciences, Qingdao Agricultural University, ChangCheng Road 700, Chengyang, Qingdao 266109, People's Republic of China
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23
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Ye B, Miao T, Zhu Y, Huang H, Yang Y, Shuai M, Zhu Z, Guo H, Wang W, Zhu Y, Yin L, Shen J. Pulsed laser deposition of large-sized superlattice films with high uniformity. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2021; 92:113906. [PMID: 34852506 DOI: 10.1063/5.0068795] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/27/2021] [Accepted: 10/21/2021] [Indexed: 06/13/2023]
Abstract
Oxide superlattices often exhibit emergent physical properties that are desirable for future information device applications. The most common growth technique for fabrication of oxide superlattices is pulsed laser deposition (PLD), which is convenient yet powerful for the growth of various oxide superlattices. However, the sample size prepared by PLD is rather small confined by the plasmon plume, which greatly limits its potential for device applications. Here, we design a PLD system that is capable of fabricating large-sized oxide superlattices with high uniformity. Specifically, during growth, the laser beam scans the target surface by combining the pitch and yaw angle rotation of the high reflective mirror and the linear motion of the focus lens. A SiC susceptor is placed in between the sample holder and the substrate to improve the large area infrared heating efficiency. Using such a system, droplet-free 10 × 10 mm2 [(LSMO)12/(PCMO)6]7 superlattices are epitaxially grown with the same period of superlattices across the whole sample areas. The high uniformity of the superlattices is further illustrated by near identical physical properties of all regions of the superlattice films. The present PLD system can be used to grow various kinds of oxide superlattices with the area size as large as 2 in., which is highly useful for device applications of oxides.
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Affiliation(s)
- Biying Ye
- State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Tian Miao
- State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Yi Zhu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Haiming Huang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Yulong Yang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Mingming Shuai
- State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Zhifei Zhu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Hangwen Guo
- State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Wenbin Wang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Yinyan Zhu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Lifeng Yin
- State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Jian Shen
- State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China
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Shrivastava M, Ramgopal Rao V. A Roadmap for Disruptive Applications and Heterogeneous Integration Using Two-Dimensional Materials: State-of-the-Art and Technological Challenges. NANO LETTERS 2021; 21:6359-6381. [PMID: 34342450 DOI: 10.1021/acs.nanolett.1c00729] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
This Mini Review attempts to establish a roadmap for two-dimensional (2D) material-based microelectronic technologies for future/disruptive applications with a vision for the semiconductor industry to enable a universal technology platform for heterogeneous integration. The heterogeneous integration would involve integrating orthogonal capabilities, such as different forms of computing (classical, neuromorphic, and quantum), all forms of sensing, digital and analog memories, energy harvesting, and so forth, all in a single chip using a universal technology platform. We have reviewed the state-of-the-art 2D materials such as graphene, transition metal dichalcogenides, phosphorene and hexagonal boron nitride, and so forth, and how they offer unique possibilities for a range of futuristic/disruptive applications. Besides, we have discussed the technological and fundamental challenges in enabling such a universal technology platform, where the world stands today, and what gaps are required to be filled.
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Affiliation(s)
- Mayank Shrivastava
- Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560012, India
| | - V Ramgopal Rao
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 40076, India
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Zhang A, Wang Z, Ouyang H, Lyu W, Sun J, Cheng Y, Fu B. Recent Progress of Two-Dimensional Materials for Ultrafast Photonics. NANOMATERIALS 2021; 11:nano11071778. [PMID: 34361163 PMCID: PMC8308201 DOI: 10.3390/nano11071778] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/22/2021] [Revised: 06/23/2021] [Accepted: 06/30/2021] [Indexed: 12/02/2022]
Abstract
Owing to their extraordinary physical and chemical properties, two-dimensional (2D) materials have aroused extensive attention and have been widely used in photonic and optoelectronic devices, catalytic reactions, and biomedicine. In particular, 2D materials possess a unique bandgap structure and nonlinear optical properties, which can be used as saturable absorbers in ultrafast lasers. Here, we mainly review the top-down and bottom-up methods for preparing 2D materials, such as graphene, topological insulators, transition metal dichalcogenides, black phosphorus, and MXenes. Then, we focus on the ultrafast applications of 2D materials at the typical operating wavelengths of 1, 1.5, 2, and 3 μm. The key parameters and output performance of ultrafast pulsed lasers based on 2D materials are discussed. Furthermore, an outlook regarding the fabrication methods and the development of 2D materials in ultrafast photonics is also presented.
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Affiliation(s)
- Aojie Zhang
- BUAA-CCMU Advanced Innovation Center for Big Data-Based Precision Medicine, School of Engineering Medicine, Beihang University, Beijing 100191, China; (A.Z.); (Z.W.); (H.O.); (W.L.); (J.S.); (Y.C.)
- School of Instrumentation and Optoelectronic Engineering, Beihang University, Beijing 100191, China
| | - Zihao Wang
- BUAA-CCMU Advanced Innovation Center for Big Data-Based Precision Medicine, School of Engineering Medicine, Beihang University, Beijing 100191, China; (A.Z.); (Z.W.); (H.O.); (W.L.); (J.S.); (Y.C.)
- School of Instrumentation and Optoelectronic Engineering, Beihang University, Beijing 100191, China
| | - Hao Ouyang
- BUAA-CCMU Advanced Innovation Center for Big Data-Based Precision Medicine, School of Engineering Medicine, Beihang University, Beijing 100191, China; (A.Z.); (Z.W.); (H.O.); (W.L.); (J.S.); (Y.C.)
- School of Instrumentation and Optoelectronic Engineering, Beihang University, Beijing 100191, China
| | - Wenhao Lyu
- BUAA-CCMU Advanced Innovation Center for Big Data-Based Precision Medicine, School of Engineering Medicine, Beihang University, Beijing 100191, China; (A.Z.); (Z.W.); (H.O.); (W.L.); (J.S.); (Y.C.)
- School of Instrumentation and Optoelectronic Engineering, Beihang University, Beijing 100191, China
| | - Jingxuan Sun
- BUAA-CCMU Advanced Innovation Center for Big Data-Based Precision Medicine, School of Engineering Medicine, Beihang University, Beijing 100191, China; (A.Z.); (Z.W.); (H.O.); (W.L.); (J.S.); (Y.C.)
- School of Instrumentation and Optoelectronic Engineering, Beihang University, Beijing 100191, China
| | - Yuan Cheng
- BUAA-CCMU Advanced Innovation Center for Big Data-Based Precision Medicine, School of Engineering Medicine, Beihang University, Beijing 100191, China; (A.Z.); (Z.W.); (H.O.); (W.L.); (J.S.); (Y.C.)
- School of Instrumentation and Optoelectronic Engineering, Beihang University, Beijing 100191, China
| | - Bo Fu
- BUAA-CCMU Advanced Innovation Center for Big Data-Based Precision Medicine, School of Engineering Medicine, Beihang University, Beijing 100191, China; (A.Z.); (Z.W.); (H.O.); (W.L.); (J.S.); (Y.C.)
- School of Instrumentation and Optoelectronic Engineering, Beihang University, Beijing 100191, China
- Key Laboratory of Big Data-Based Precision Medicine Ministry of Industry and Information Technology, Interdisciplinary Innovation Institute of Medicine and Engineering, Beihang University, Beijing 100191, China
- Correspondence:
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Li J, Wang S, Jiang Q, Qian H, Hu S, Kang H, Chen C, Zhan X, Yu A, Zhao S, Zhang Y, Chen Z, Sui Y, Qiao S, Yu G, Peng S, Jin Z, Liu X. Single-Crystal MoS 2 Monolayer Wafer Grown on Au (111) Film Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100743. [PMID: 34145739 DOI: 10.1002/smll.202100743] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/04/2021] [Revised: 03/11/2021] [Indexed: 06/12/2023]
Abstract
Monolayer transition metal dichalcogenides (TMDCs) with high crystalline quality are important channel materials for next-generation electronics. Researches on TMDCs have been accelerated by the development of chemical vapor deposition (CVD). However, antiparallel domains and twin grain boundaries (GBs) usually form in CVD synthesis due to the special threefold symmetry of TMDCs lattices. The existence of GBs severely reduces the electrical and photoelectrical properties of TMDCs, thus restricting their practical applications. Herein, the epitaxial growth of single crystal MoS2 (SC-MoS2 ) monolayer is reported on Au (111) film across a two-inch c-plane sapphire wafer by CVD. The MoS2 domains obtained on Au (111) film exhibit unidirectional alignment with zigzag edges parallel to the <110> direction of Au (111). Experimental results indicated that the unidirectional growth of MoS2 domains on Au (111) is a temperature-guided epitaxial growth mode. The high growth temperature provides enough energy for the rotation of the MoS2 seeds to find the most favorable orientation on Au (111) to achieve a unidirectional ratio of over 99%. Moreover, the unidirectional MoS2 domains seamlessly stitched into single crystal monolayer without GBs formation. The progress achieved in this work will promote the practical applications of TMDCs in microelectronics.
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Affiliation(s)
- Jing Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shuang Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qi Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haoji Qian
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shike Hu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - He Kang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chen Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaoyi Zhan
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Aobo Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Sunwen Zhao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yanhui Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Zhiying Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yanping Sui
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Shan Qiao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Guanghui Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Songang Peng
- Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Zhi Jin
- Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Xinyu Liu
- Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
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Mouloua D, Kotbi A, Deokar G, Kaja K, El Marssi M, EL Khakani MA, Jouiad M. Recent Progress in the Synthesis of MoS 2 Thin Films for Sensing, Photovoltaic and Plasmonic Applications: A Review. MATERIALS (BASEL, SWITZERLAND) 2021; 14:3283. [PMID: 34198592 PMCID: PMC8231843 DOI: 10.3390/ma14123283] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/16/2021] [Revised: 06/08/2021] [Accepted: 06/10/2021] [Indexed: 11/16/2022]
Abstract
In the surge of recent successes of 2D materials following the rise of graphene, molybdenum disulfide (2D-MoS2) has been attracting growing attention from both fundamental and applications viewpoints, owing to the combination of its unique nanoscale properties. For instance, the bandgap of 2D-MoS2, which changes from direct (in the bulk form) to indirect for ultrathin films (few layers), offers new prospects for various applications in optoelectronics. In this review, we present the latest scientific advances in the field of synthesis and characterization of 2D-MoS2 films while highlighting some of their applications in energy harvesting, gas sensing, and plasmonic devices. A survey of the physical and chemical processing routes of 2D-MoS2 is presented first, followed by a detailed description and listing of the most relevant characterization techniques used to study the MoS2 nanomaterial as well as theoretical simulations of its interesting optical properties. Finally, the challenges related to the synthesis of high quality and fairly controllable MoS2 thin films are discussed along with their integration into novel functional devices.
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Affiliation(s)
- Driss Mouloua
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, 33 Saint Leu, 80039 Amiens, France; (D.M.); (A.K.); (M.E.M.)
- Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650, Blvd, Lionel–Boulet, Varennes, QC J3X-1S2, Canada
| | - Ahmed Kotbi
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, 33 Saint Leu, 80039 Amiens, France; (D.M.); (A.K.); (M.E.M.)
| | - Geetanjali Deokar
- Physical Science and Engineering Division, Kaust University, Thuwal 23955-6900, Saudi Arabia;
| | - Khaled Kaja
- Laboratoire National de métrologie et d’essais (LNE), 29 av. Roger Hannequin, 78197 Trappes, France;
| | - Mimoun El Marssi
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, 33 Saint Leu, 80039 Amiens, France; (D.M.); (A.K.); (M.E.M.)
| | - My Ali EL Khakani
- Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650, Blvd, Lionel–Boulet, Varennes, QC J3X-1S2, Canada
| | - Mustapha Jouiad
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, 33 Saint Leu, 80039 Amiens, France; (D.M.); (A.K.); (M.E.M.)
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Xu H, Akbari MK, Zhuiykov S. 2D Semiconductor Nanomaterials and Heterostructures: Controlled Synthesis and Functional Applications. NANOSCALE RESEARCH LETTERS 2021; 16:94. [PMID: 34032946 PMCID: PMC8149775 DOI: 10.1186/s11671-021-03551-w] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2021] [Accepted: 05/17/2021] [Indexed: 06/01/2023]
Abstract
Two-dimensional (2D) semiconductors beyond graphene represent the thinnest stable known nanomaterials. Rapid growth of their family and applications during the last decade of the twenty-first century have brought unprecedented opportunities to the advanced nano- and opto-electronic technologies. In this article, we review the latest progress in findings on the developed 2D nanomaterials. Advanced synthesis techniques of these 2D nanomaterials and heterostructures were summarized and their novel applications were discussed. The fabrication techniques include the state-of-the-art developments of the vapor-phase-based deposition methods and novel van der Waals (vdW) exfoliation approaches for fabrication both amorphous and crystalline 2D nanomaterials with a particular focus on the chemical vapor deposition (CVD), atomic layer deposition (ALD) of 2D semiconductors and their heterostructures as well as on vdW exfoliation of 2D surface oxide films of liquid metals.
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Affiliation(s)
- Hongyan Xu
- School of Materials Science and Engineering, North University of China, Taiyuan, 030051 People’s Republic of China
| | - Mohammad Karbalaei Akbari
- Centre for Environmental and Energy Research, Ghent University Global Campus, 119-5 Songdomunhwa-ro, Yeonsu-gu, Incheon, 21985 South Korea
- Department of Solid State Science, Faculty of Science, Ghent University, Krijgslaan 281/S1, 9000 Ghent, Belgium
| | - Serge Zhuiykov
- School of Materials Science and Engineering, North University of China, Taiyuan, 030051 People’s Republic of China
- Centre for Environmental and Energy Research, Ghent University Global Campus, 119-5 Songdomunhwa-ro, Yeonsu-gu, Incheon, 21985 South Korea
- Department of Solid State Science, Faculty of Science, Ghent University, Krijgslaan 281/S1, 9000 Ghent, Belgium
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Lin Y, Torsi R, Geohegan DB, Robinson JA, Xiao K. Controllable Thin-Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2004249. [PMID: 33977064 PMCID: PMC8097379 DOI: 10.1002/advs.202004249] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2020] [Revised: 12/06/2020] [Indexed: 06/01/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) exhibit exciting properties and versatile material chemistry that are promising for device miniaturization, energy, quantum information science, and optoelectronics. Their outstanding structural stability permits the introduction of various foreign dopants that can modulate their optical and electronic properties and induce phase transitions, thereby adding new functionalities such as magnetism, ferroelectricity, and quantum states. To accelerate their technological readiness, it is essential to develop controllable synthesis and processing techniques to precisely engineer the compositions and phases of 2D TMDs. While most reviews emphasize properties and applications of doped TMDs, here, recent progress on thin-film synthesis and processing techniques that show excellent controllability for substitutional doping of 2D TMDs are reported. These techniques are categorized into bottom-up methods that grow doped samples on substrates directly and top-down methods that use energetic sources to implant dopants into existing 2D crystals. The doped and alloyed variants from Group VI TMDs will be at the center of technical discussions, as they are expected to play essential roles in next-generation optoelectronic applications. Theoretical backgrounds based on first principles calculations will precede the technical discussions to help the reader understand each element's likelihood of substitutional doping and the expected impact on the material properties.
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Affiliation(s)
- Yu‐Chuan Lin
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Riccardo Torsi
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - David B. Geohegan
- Center for Nanophase Materials SciencesOak Ridge National LaboratoryOak RidgeTN37831USA
| | - Joshua A. Robinson
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Two‐Dimensional Crystal ConsortiumThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Center for 2‐Dimensional and Layered MaterialsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Kai Xiao
- Center for Nanophase Materials SciencesOak Ridge National LaboratoryOak RidgeTN37831USA
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Zatko V, Dubois SMM, Godel F, Carrétéro C, Sander A, Collin S, Galbiati M, Peiro J, Panciera F, Patriarche G, Brus P, Servet B, Charlier JC, Martin MB, Dlubak B, Seneor P. Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructures. ACS NANO 2021; 15:7279-7289. [PMID: 33755422 DOI: 10.1021/acsnano.1c00544] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We present a growth process relying on pulsed laser deposition for the elaboration of complex van der Waals heterostructures on large scales, at a 400 °C CMOS-compatible temperature. Illustratively, we define a multilayer quantum well geometry through successive in situ growths, leading to WSe2 being encapsulated into WS2 layers. The structural constitution of the quantum well geometry is confirmed by Raman spectroscopy combined with transmission electron microscopy. The large-scale high homogeneity of the resulting 2D van der Waals heterostructure is also validated by macro- and microscale Raman mappings. We illustrate the benefit of this integrative in situ approach by showing the structural preservation of even the most fragile 2D layers once encapsulated in a van der Waals heterostructure. Finally, we fabricate a vertical tunneling device based on these large-scale layers and discuss the clear signature of electronic transport controlled by the quantum well configuration with ab initio calculations in support. The flexibility of this direct growth approach, with multilayer stacks being built in a single run, allows for the definition of complex 2D heterostructures barely accessible with usual exfoliation or transfer techniques of 2D materials. Reminiscent of the III-V semiconductors' successful exploitation, our approach unlocks virtually infinite combinations of large 2D material families in any complex van der Waals heterostructure design.
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Affiliation(s)
- Victor Zatko
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Simon Mutien-Marie Dubois
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Institute of Condensed Matter and Nanosciences (IMCN), Université Catholique de Louvain, B-1348 Louvain-la-Neuve, Belgium
| | - Florian Godel
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Cécile Carrétéro
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Anke Sander
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Sophie Collin
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Marta Galbiati
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Julian Peiro
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Federico Panciera
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Gilles Patriarche
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Pierre Brus
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Thales Research and Technology, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
| | - Bernard Servet
- Thales Research and Technology, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
| | - Jean-Christophe Charlier
- Institute of Condensed Matter and Nanosciences (IMCN), Université Catholique de Louvain, B-1348 Louvain-la-Neuve, Belgium
| | - Marie-Blandine Martin
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Bruno Dlubak
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Pierre Seneor
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
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Laser printed two-dimensional transition metal dichalcogenides. Sci Rep 2021; 11:5211. [PMID: 33664284 PMCID: PMC7933426 DOI: 10.1038/s41598-021-81829-w] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/03/2020] [Accepted: 01/11/2021] [Indexed: 11/13/2022] Open
Abstract
Laser processing is a highly versatile technique for the post-synthesis treatment and modification of transition metal dichalcogenides (TMDCs). However, to date, TMDCs synthesis typically relies on large area CVD growth and lithographic post-processing for nanodevice fabrication, thus relying heavily on complex, capital intensive, vacuum-based processing environments and fabrication tools. This inflexibility necessarily restricts the development of facile, fast, very low-cost synthesis protocols. Here we show that direct, spatially selective synthesis of 2D-TMDCs devices that exhibit excellent electrical, Raman and photoluminescence properties can be realized using laser printing under ambient conditions with minimal lithographic or thermal overheads. Our simple, elegant process can be scaled via conventional laser printing approaches including spatial light modulation and digital light engines to enable mass production protocols such as roll-to-roll processing.
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Bertoldo F, Unocic RR, Lin YC, Sang X, Puretzky AA, Yu Y, Miakota D, Rouleau CM, Schou J, Thygesen KS, Geohegan DB, Canulescu S. Intrinsic Defects in MoS 2 Grown by Pulsed Laser Deposition: From Monolayers to Bilayers. ACS NANO 2021; 15:2858-2868. [PMID: 33576605 DOI: 10.1021/acsnano.0c08835] [Citation(s) in RCA: 23] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Pulsed laser deposition (PLD) can be considered a powerful method for the growth of two-dimensional (2D) transition-metal dichalcogenides (TMDs) into van der Waals heterostructures. However, despite significant progress, the defects in 2D TMDs grown by PLD remain largely unknown and yet to be explored. Here, we combine atomic resolution images and first-principles calculations to reveal the atomic structure of defects, grains, and grain boundaries in mono- and bilayer MoS2 grown by PLD. We find that sulfur vacancies and MoS antisites are the predominant point defects in 2D MoS2. We predict that the aforementioned point defects are thermodynamically favorable under a Mo-rich/S-poor environment. The MoS2 monolayers are polycrystalline and feature nanometer size grains connected by a high density of grain boundaries. In particular, the coalescence of nanometer grains results in the formation of 180° mirror twin boundaries consisting of distinct 4- and 8-membered rings. We show that PLD synthesis of bilayer MoS2 results in various structural symmetries, including AA' and AB, but also turbostratic with characteristic moiré patterns. Moreover, we report on the experimental demonstration of an electron beam-driven transition between the AB and AA' stacking orientations in bilayer MoS2. These results provide a detailed insight into the atomic structure of monolayer MoS2 and the role of the grain boundaries on the growth of bilayer MoS2, which has importance for future applications in optoelectronics.
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Affiliation(s)
- Fabian Bertoldo
- CAMD and Center for Nanostructured Graphene (CNG), Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Raymond R Unocic
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Yu-Chuan Lin
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Xiahan Sang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 430070 Wuhan, China
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Yiling Yu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Denys Miakota
- Department of Photonics Engineering, Technical University of Denmark, 4000 Roskilde, Denmark
| | - Christopher M Rouleau
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Jørgen Schou
- Department of Photonics Engineering, Technical University of Denmark, 4000 Roskilde, Denmark
| | - Kristian S Thygesen
- CAMD and Center for Nanostructured Graphene (CNG), Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - David B Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Stela Canulescu
- Department of Photonics Engineering, Technical University of Denmark, 4000 Roskilde, Denmark
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33
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Xu Y, Ma Y, Yu Y, Chen S, Chang Y, Chen X, Xu G. Self-powered, ultra-high detectivity and high-speed near-infrared photodetectors from stacked-layered MoSe 2/Si heterojunction. NANOTECHNOLOGY 2021; 32:075201. [PMID: 33113523 DOI: 10.1088/1361-6528/abc57d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Photodetectors based on high-performance, two-dimensional (2D) layered transition metal dichalcogenides (TMDCs) are limited by the synthesis of larger-area 2D TMDCs with high quality and optimized device structure. Herein, we report, for the first time, a uniform and stacked-layered MoSe2 film of high quality was deposited onto Si substrate by using the pulsed laser deposition technique, and then in situ constructed layered MoSe2/Si 2D-3D vertical heterojunction. The resultant heterojunction showed a wide near-infrared response up to 1550 nm, with both ultra-high detectivity up to 1.4 × 1014 Jones and a response speed approaching 120 ns at zero bias, which are much better than most previous 2D TMDC-based photodetectors and are comparable to that of commercial Si photodiodes. The high performance of the layered MoSe2/Si heterojunction can be attributed to be the high-quality stacked-layered MoSe2 film, the excellent rectifying behavior of the device and the n-n heterojunction structure. Moreover, the defect-enhanced near-infrared response was determined to be Se vacancies from the density functional theory (DFT) simulations. These results suggest great potential of the layered MoSe2/Si 2D-3D heterojunctions in the field of communication light detection. More importantly, the in situ grown heterojunctions are expected to boost the development of other 2D TMDCs heterojunction-based optoelectronic devices.
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Affiliation(s)
- Yan Xu
- School of Electrical Science and Applied Physics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui, 230009, People's Republic of China
- Intelligent Interconnected Systems Laboratory of Anhui Province (Hefei University of Technology), Anhui, 230009, People's Republic of China
| | - Yuanming Ma
- School of Electrical Science and Applied Physics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui, 230009, People's Republic of China
| | - Yongqiang Yu
- School of Electrical Science and Applied Physics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui, 230009, People's Republic of China
- Intelligent Interconnected Systems Laboratory of Anhui Province (Hefei University of Technology), Anhui, 230009, People's Republic of China
| | - Shirong Chen
- School of Electrical Science and Applied Physics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui, 230009, People's Republic of China
| | - Yajing Chang
- State Key Laboratory of Pulsed Power Laser Technology, National University of Defense Technology, Hefei, Anhui, 230037, People's Republic of China
| | - Xing Chen
- School of Electrical Science and Applied Physics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui, 230009, People's Republic of China
| | - Gaobin Xu
- School of Electrical Science and Applied Physics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui, 230009, People's Republic of China
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El Bouanani L, Serna MI, M N Hasan S, Murillo BL, Nam S, Choi H, Alshareef HN, Quevedo-Lopez MA. Large-Area Pulsed Laser Deposited Molybdenum Diselenide Heterojunction Photodiodes. ACS APPLIED MATERIALS & INTERFACES 2020; 12:51645-51653. [PMID: 33167617 DOI: 10.1021/acsami.0c15462] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) semiconductors, such as transition-metal dichalcogenides (TMDs), have attracted immense interest due to their excellent electronic and optical properties. The combination of single and multilayered 2D TMDs coupled with either Si or II-VI semiconductors can result in robust and reliable photodetectors. In this paper, we report the deposition process of MoSe2-layered films using pulsed laser deposition (PLD) over areas of 20 cm2 with a tunable band gap. Raman and X-ray diffraction indicates crystalline and highly oriented layered MoSe2. X-ray photoelectron spectroscopy shows Mo and Se present in the first few layers of the film. Rutherford backscattering demonstrates the effect of O and C on the surface and film/substrate interface of the deposited films. Ultraviolet-visible spectroscopy, Kelvin probe, photoelectron spectroscopy, and electrical measurements are used to investigate the band diagram and electrical property dependence as a function of MoSe2 layers/thickness. As the MoSe2 thickness increases from 3.5 to 11.4 nm, the band gap decreases from 1.98 to 1.75 eV, the work function increases from 4.52 to 4.72 eV, the ionization energy increases from 5.71 to 5.77 eV, the sheet resistance decreases from 541 to 56.0 kΩ, the contact resistance decreases from 187 to 54.6 Ω·cm2, and the transfer length increases from 2.27 to 61.9 nm. Transmission electron microscopy (TEM) cross-sectional images demonstrate the layered structure of the MoSe2 with an average interlayer spacing of 0.68 nm. The fabricated MoSe2-Si photodiodes demonstrate a current on/off ratio of ∼2 × 104 orders of magnification and photocurrent generation with a 22.5 ns rise time and a 190.8 ns decay time, respectively.
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Affiliation(s)
- Lidia El Bouanani
- Department of Materials Science and Engineering, The University of Texas at Dallas, 800 W Campbell Rd, Richardson, Texas 75080, United States
- Department of Electrical Engineering, The University of Texas at Dallas, 800 W Campbell Rd, Richardson, Texas 75080, United States
| | - Martha I Serna
- Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd, Bldg 160, Austin, Texas 78758, United States
| | - Syed M N Hasan
- Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, United States
| | - Bayron L Murillo
- Department of Materials Science and Engineering, The University of Texas at Dallas, 800 W Campbell Rd, Richardson, Texas 75080, United States
- Department of Electrical Engineering, The University of Texas at Dallas, 800 W Campbell Rd, Richardson, Texas 75080, United States
| | - Seungjin Nam
- School of Advanced Materials Engineering, Kookmin University, 77, Jeongneungro, Seongbuk-gu, Seoul 136-702, Korea
| | - Hyunjoo Choi
- School of Advanced Materials Engineering, Kookmin University, 77, Jeongneungro, Seongbuk-gu, Seoul 136-702, Korea
| | - Husam N Alshareef
- Materials Science and Engineering, King Abdullah University of Science and Technology, Thuwal 23955, Saudi Arabia
| | - Manuel A Quevedo-Lopez
- Department of Materials Science and Engineering, The University of Texas at Dallas, 800 W Campbell Rd, Richardson, Texas 75080, United States
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Vandalon V, Verheijen MA, Kessels WMM, Bol AA. Atomic Layer Deposition of Al-Doped MoS 2: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density. ACS APPLIED NANO MATERIALS 2020; 3:10200-10208. [PMID: 33134882 PMCID: PMC7590523 DOI: 10.1021/acsanm.0c02167] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2020] [Accepted: 09/23/2020] [Indexed: 05/29/2023]
Abstract
Extrinsically doped two-dimensional (2D) semiconductors are essential for the fabrication of high-performance nanoelectronics among many other applications. Herein, we present a facile synthesis method for Al-doped MoS2 via plasma-enhanced atomic layer deposition (ALD), resulting in a particularly sought-after p-type 2D material. Precise and accurate control over the carrier concentration was achieved over a wide range (1017 up to 1021 cm-3) while retaining good crystallinity, mobility, and stoichiometry. This ALD-based approach also affords excellent control over the doping profile, as demonstrated by a combined transmission electron microscopy and energy-dispersive X-ray spectroscopy study. Sharp transitions in the Al concentration were realized and both doped and undoped materials had the characteristic 2D-layered nature. The fine control over the doping concentration, combined with the conformality and uniformity, and subnanometer thickness control inherent to ALD should ensure compatibility with large-scale fabrication. This makes Al:MoS2 ALD of interest not only for nanoelectronics but also for photovoltaics and transition-metal dichalcogenide-based catalysts.
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Affiliation(s)
- Vincent Vandalon
- Applied
Physics, Eindhoven University of Technology, 5600MB Eindhoven, The Netherlands
| | - Marcel A. Verheijen
- Applied
Physics, Eindhoven University of Technology, 5600MB Eindhoven, The Netherlands
- Eurofins
Material Science Netherlands BV, 5656AE Eindhoven, The Netherlands
| | | | - Ageeth A. Bol
- Applied
Physics, Eindhoven University of Technology, 5600MB Eindhoven, The Netherlands
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36
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Giannazzo F, Schilirò E, Greco G, Roccaforte F. Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures. NANOMATERIALS 2020; 10:nano10040803. [PMID: 32331313 PMCID: PMC7221570 DOI: 10.3390/nano10040803] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/31/2020] [Revised: 04/16/2020] [Accepted: 04/17/2020] [Indexed: 11/16/2022]
Abstract
Semiconducting transition metal dichalcogenides (TMDs) are promising materials for future electronic and optoelectronic applications. However, their electronic properties are strongly affected by peculiar nanoscale defects/inhomogeneities (point or complex defects, thickness fluctuations, grain boundaries, etc.), which are intrinsic of these materials or introduced during device fabrication processes. This paper reviews recent applications of conductive atomic force microscopy (C-AFM) to the investigation of nanoscale transport properties in TMDs, discussing the implications of the local phenomena in the overall behavior of TMD-based devices. Nanoscale resolution current spectroscopy and mapping by C-AFM provided information on the Schottky barrier uniformity and shed light on the mechanisms responsible for the Fermi level pinning commonly observed at metal/TMD interfaces. Methods for nanoscale tailoring of the Schottky barrier in MoS2 for the realization of ambipolar transistors are also illustrated. Experiments on local conductivity mapping in monolayer MoS2 grown by chemical vapor deposition (CVD) on SiO2 substrates are discussed, providing a direct evidence of the resistance associated to the grain boundaries (GBs) between MoS2 domains. Finally, C-AFM provided an insight into the current transport phenomena in TMD-based heterostructures, including lateral heterojunctions observed within MoxW1-xSe2 alloys, and vertical heterostructures made by van der Waals stacking of different TMDs (e.g., MoS2/WSe2) or by CVD growth of TMDs on bulk semiconductors.
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37
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Song Y, Li Z, Li H, Tang S, Mu G, Xu L, Peng W, Shen D, Chen Y, Xie X, Jiang M. Epitaxial growth and characterization of high quality Bi 2O 2Se thin films on SrTiO 3 substrates by pulsed laser deposition. NANOTECHNOLOGY 2020; 31:165704. [PMID: 31891932 DOI: 10.1088/1361-6528/ab6686] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Recently, Bi2O2Se was revealed as a promising two-dimensional (2D) semiconductor for next generation electronics, due to its moderate bandgap size, high electron mobility and pronounced ambient stability. Meanwhile, it has been predicted that high-quality Bi2O2Se-related heterostructures may possess exotic physical phenomena, such as piezoelectricity and topological superconductivity. Herein, we report the first successful heteroepitaxial growth of Bi2O2Se films on SrTiO3 substrates via pulsed laser deposition (PLD) method. Films obtained under optimal conditions show an epitaxial growth with the c axis perpendicular to the film surface and the a and b axes parallel to the substrate. The growth mode transition to three-dimensional (3D) island from quasi-2D layer of the heteroepitaxial Bi2O2Se films on SrTiO3 (001) substrates is observed as prolonging deposition time of films. The maximum value of electron mobility reaches 160 cm2 V-1 s-1 at room temperature in a 70 nm thick film. The thickness dependent mobility provides evidence that interface-scattering is likely to be the limiting factor for the relatively low electron mobility at low temperature, implying that the interface engineering as an effective method to tune the low temperature electron mobility. Our work suggests the epitaxial Bi2O2Se films grown by PLD are promising for both fundamental study and practical applications.
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Affiliation(s)
- Yekai Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China. CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, People's Republic of China. School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, People's Republic of China
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38
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Sriram P, Manikandan A, Chuang FC, Chueh YL. Hybridizing Plasmonic Materials with 2D-Transition Metal Dichalcogenides toward Functional Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e1904271. [PMID: 32196957 DOI: 10.1002/smll.201904271] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2019] [Revised: 10/29/2019] [Indexed: 06/10/2023]
Abstract
Recently, 2D transition metal dichalcogenides (TMDs) have become intriguing materials in the versatile field of photonics and optoelectronics because of their strong light-matter interaction that stems from the atomic layer thickness, broadband optical response, controllable optoelectronic properties, and high nonlinearity, as well as compatibility. Nevertheless, the low optical cross-section of 2D-TMDs inhibits the light-matter interaction, resulting in lower quantum yield. Therefore, hybridizing the 2D-TMDs with plasmonic nanomaterials has become one of the promising strategies to boost the optical absorption of thin 2D-TMDs. The appeal of plasmonics is based on their capability to localize and enhance the electromagnetic field and increase the optical path length of light by scattering and injecting hot electrons to TMDs. In this regard, recent achievements with respect to hybridization of the plasmonic effect in 2D-TMDs systems and its augmented optical and optoelectronic properties are reviewed. The phenomenon of plasmon-enhanced interaction in 2D-TMDs is briefly described and state-of-the-art hybrid device applications are comprehensively discussed. Finally, an outlook on future applications of these hybrid devices is provided.
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Affiliation(s)
- Pavithra Sriram
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Arumugam Manikandan
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Feng-Chuan Chuang
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
- Physics Division, The National Center for Theoretical Science, Hsinchu, 30013, Taiwan
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu, 30013, Taiwan
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39
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Mandyam SV, Kim HM, Drndić M. Large area few-layer TMD film growths and their applications. JPHYS MATERIALS 2020; 3:024008. [PMID: 36092286 PMCID: PMC9458871 DOI: 10.1088/2515-7639/ab82b3] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Research on 2D materials is one of the core themes of modern condensed matter physics. Prompted by the experimental isolation of graphene, much attention has been given to the unique optical, electronic, and structural properties of these materials. In the past few years, semiconducting transition metal dichalcogenides (TMDs) have attracted increasing interest due to properties such as direct band gaps and intrinsically broken inversion symmetry. Practical utilization of these properties demands large-area synthesis. While films of graphene have been by now synthesized on the order of square meters, analogous achievements are difficult for TMDs given the complexity of their growth kinetics. This article provides an overview of methods used to synthesize films of mono- and few-layer TMDs, comparing spatial and time scales for the different growth strategies. A special emphasis is placed on the unique applications enabled by such large-scale realization, in fields such as electronics and optics.
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Affiliation(s)
- Srinivas V Mandyam
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States of America
| | - Hyong M Kim
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States of America
| | - Marija Drndić
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States of America
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40
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Li G, Wang X, Han B, Zhang W, Qi S, Zhang Y, Qiu J, Gao P, Guo S, Long R, Tan Z, Song XZ, Liu N. Direct Growth of Continuous and Uniform MoS 2 Film on SiO 2/Si Substrate Catalyzed by Sodium Sulfate. J Phys Chem Lett 2020; 11:1570-1577. [PMID: 32013437 DOI: 10.1021/acs.jpclett.9b03879] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Because of its unique electronic band structure, molybdenum disulfide (MoS2) has been regarded as a star semiconducting material. However, direct growth of continuous and high-quality MoS2 films on SiO2/Si substrates is still very challenging. Here, we report a facile chemical vapor deposition (CVD) method based on synergistic modulation of precursor and Na2SO4 catalysis, realizing the centimeter scale growth of a continuous MoS2 film on SiO2/Si substrates. The as-grown MoS2 film had an excellent spatial homogeneity and crystal quality, with an edge length of the composite domain as large as 632 μm. Both experimental and theoretical results proved that Na tended to bond with SiO2 substrates rather than to interfere with as-grown MoS2. Thus, they showed decent and uniform electrical performance, with electron mobilities as high as 5.9 cm2 V-1 s-1. We believe our method will pave a new way for MoS2 toward real application in modern electronics.
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Affiliation(s)
- Guanmeng Li
- State Key Laboratory of Fine Chemicals, Panjin Branch of School of Chemical Engineering , Dalian University of Technology , 2 Dagong Road , Liaodongwan New District, Panjin 124221 , Liaoning , China
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Xiaoli Wang
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education , Beijing Normal University , Beijing 100875 , China
| | - Bo Han
- International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics , Peking University , Beijing 100871 , China
| | - Weifeng Zhang
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Shuyan Qi
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Yan Zhang
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Jiakang Qiu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Peng Gao
- International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics , Peking University , Beijing 100871 , China
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , China
| | - Shaoshi Guo
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Run Long
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education , Beijing Normal University , Beijing 100875 , China
| | - Zhenquan Tan
- State Key Laboratory of Fine Chemicals, Panjin Branch of School of Chemical Engineering , Dalian University of Technology , 2 Dagong Road , Liaodongwan New District, Panjin 124221 , Liaoning , China
| | - Xue-Zhi Song
- State Key Laboratory of Fine Chemicals, Panjin Branch of School of Chemical Engineering , Dalian University of Technology , 2 Dagong Road , Liaodongwan New District, Panjin 124221 , Liaoning , China
| | - Nan Liu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
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41
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Ghasemian MB, Daeneke T, Shahrbabaki Z, Yang J, Kalantar-Zadeh K. Peculiar piezoelectricity of atomically thin planar structures. NANOSCALE 2020; 12:2875-2901. [PMID: 31984979 DOI: 10.1039/c9nr08063e] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The emergence of piezoelectricity in two-dimensional (2D) materials has represented a milestone towards employing low-dimensional structures for future technologies. 2D piezoelectric materials possess unique and unprecedented characteristics that cannot be found in other morphologies; therefore, the applications of piezoelectricity can be substantially extended. By reducing the thickness into the 2D realm, piezoelectricity might be induced in otherwise non-piezoelectric materials. The origin of the enhanced piezoelectricity in such thin planes is attributed to the loss of centrosymmetry, altered carrier concentration, and change in local polarization and can be efficiently tailored via surface modifications. Access to such materials is important from a fundamental research point of view, to observe the extraordinary interactions between free charge carriers, phonons and photons, and also with respect to device development, for which planar structures provide the required compatibility with the large-scale fabrication technologies of integrated circuits. The existence of piezoelectricity in 2D materials presents great opportunities for applications in various fields of electronics, optoelectronics, energy harvesting, sensors, actuators and biotechnology. Additionally, 2D flexible nanostructures with superior piezoelectric properties are distinctive candidates for integration into nano-scale electromechanical systems. Here we fundamentally review the state of the art of 2D piezoelectric materials from both experimental and theoretical aspects and report the recent achievements in the synthesis, characterization and applications of these materials.
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Affiliation(s)
- Mohammad B Ghasemian
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney Campus, NSW 2052, Australia.
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Zhang W, Zou G, Choi JH. Adsorption Behavior of the Hydroxyl Radical and Its Effects on Monolayer MoS 2. ACS OMEGA 2020; 5:1982-1986. [PMID: 32039335 PMCID: PMC7003505 DOI: 10.1021/acsomega.9b03837] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/11/2019] [Accepted: 01/13/2020] [Indexed: 06/10/2023]
Abstract
Based on first-principles density functional theory calculations, we investigated a modified routine using hydroxyl adsorption that recently demonstrated the controlled growth of MoS2 monolayers. The new growth approach impedes the deposition of a second MoS2 layer; however, the hydroxyl adsorption and its effects have been mostly unexplored. Through this study, we first explored the adsorption behaviors of the hydroxyl radical (OH) on monolayer MoS2 and briefly discussed its effects on the stability and electronic structure. Monolayer MoS2 repels charged OH-, whereas the adsorption of the neutral OH radical is energetically favorable; the corresponding adsorption energies are 0.09 eV and -1.35 eV, respectively. The diffusion barrier of the OH radical on MoS2 is 0.52 eV, indicating that the molecule can quickly diffuse. Next, the study demonstrated that for multiple OH adsorptions, a concerted reaction including OH dissociation and H2O formation is more energetically favorable than the adsorption of two OH molecules by 2.50 eV, which in turn results in a mixed adsorption configuration of O and OH. In addition, we revealed that the OH adsorption creates a mid-gap state and facilitates the reconstruction of the MoS2 edge.
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Tahir Z, Kim S, Ullah F, Lee S, Lee JH, Park NW, Seong MJ, Lee SK, Ju TS, Park S, Bae JS, Jang JI, Kim YS. Highly Efficient Solar Steam Generation by Glassy Carbon Foam Coated with Two-Dimensional Metal Chalcogenides. ACS APPLIED MATERIALS & INTERFACES 2020; 12:2490-2496. [PMID: 31840505 DOI: 10.1021/acsami.9b18589] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Steam generation by eco-friendly solar energy has immense potential in terms of low-cost power generation, desalination, sanitization, and wastewater treatment. Herein, highly efficient steam generation in a bilayer solar steam generator (BSSG) is demonstrated, which is comprised of a large-area SnSe-SnSe2 layer deposited on a glassy carbon foam (CF). Both CF and SnSe-SnSe2 possess high photothermal conversion capabilities and low thermal conductivities. The combined bilayer system cumulatively converts input solar light into heat through phonon-assisted transitions in the indirect band gap SnSe-SnSe2 layer, together with trapping of sunlight via multiple scattering due to the porous morphology of the CF. This synergistic effect leads to efficient broadband solar absorption. Moreover, the low out-of-plane thermal conductivities of SnSe-SnSe2 and CF confine the generated heat at the evaporation surface, resulting in a significant reduction of heat losses. Additionally, the hydrophilic nature of the acid-treated CF offers effective water transport via capillary action, required for efficient solar steam generation in a floating form. A high evaporation rate (1.28 kg m-2 h-1) and efficiency (84.1%) are acquired under 1 sun irradiation. The BSSG system shows high recyclability, stability, and durability under repeated steam-generation cycles, which renders its practical device applications possible.
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Affiliation(s)
- Zeeshan Tahir
- Department of Physics and Energy Harvest Storage Research Center , University of Ulsan , Ulsan 44610 , South Korea
| | - Sungdo Kim
- Department of Physics and Energy Harvest Storage Research Center , University of Ulsan , Ulsan 44610 , South Korea
| | - Farman Ullah
- Department of Physics and Energy Harvest Storage Research Center , University of Ulsan , Ulsan 44610 , South Korea
| | - Sunghan Lee
- Department of Physics and Energy Harvest Storage Research Center , University of Ulsan , Ulsan 44610 , South Korea
| | - Je-Ho Lee
- Department of Physics , Chung-Ang University , Seoul 06794 , South Korea
| | - No-Won Park
- Department of Physics , Chung-Ang University , Seoul 06794 , South Korea
| | - Maeng-Je Seong
- Department of Physics , Chung-Ang University , Seoul 06794 , South Korea
| | - Sang-Kwon Lee
- Department of Physics , Chung-Ang University , Seoul 06794 , South Korea
| | - Tae-Seong Ju
- Department of Physics , Pusan National University , Busan 46241 , South Korea
| | - Sungkyun Park
- Department of Physics , Pusan National University , Busan 46241 , South Korea
| | - Jong-Seong Bae
- Busan Center , Korea Basic Science Institute , Busan 46742 , South Korea
| | - Joon Ik Jang
- Department of Physics , Sogang University , Seoul 04107 , South Korea
| | - Yong Soo Kim
- Department of Physics and Energy Harvest Storage Research Center , University of Ulsan , Ulsan 44610 , South Korea
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Feng J, Zhang J, Zheng Z, Zhou T. New Strategy to Achieve Laser Direct Writing of Polymers: Fabrication of the Color-Changing Microcapsule with a Core-Shell Structure. ACS APPLIED MATERIALS & INTERFACES 2019; 11:41688-41700. [PMID: 31601102 DOI: 10.1021/acsami.9b15214] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
This paper proposed an efficient and environmentally friendly strategy to prepare a new color-changing microcapsule with a core-shell structure for laser direct writing of polymers, and only the physical melt blending of polymers was employed. The laser absorber (SnO2) and the easily carbonized polymer (PC) were designed as the "core" and the "shell" of the microcapsule, respectively. The microcapsules were in situ formed during melt blending. Scanning electron microscopy, transmission electron microscopy, and energy-dispersive spectrometry confirmed the successful preparation of SnO2/PC microcapsules with a core-shell structure. Their average diameter was 2.2 μm, and the "shell" thickness was 0.21-0.24 μm. As expected, these SnO2/PC microcapsules endowed polymers with an outstanding performance of near-infrared (NIR) laser direct writing. Raman spectroscopy and X-ray photoelectron spectroscopy indicated that the color change was ascribed to the polymer carbonization because of the instantaneous high temperature caused by the SnO2 absorption of NIR laser energy. Optical microscopy observed a thick carbonization layer of 234 μm. Moreover, Raman depth imaging revealed the carbonization distribution, confirming that the amorphous carbon produced by the carbonization of the PC "shell" is the key factor of SnO2/PC microcapsules to provide polymers an outstanding performance of laser direct writing. This color-changing microcapsule has no selectivity to polymers because of providing a black color source (the carbonization of PC) itself, ensuring the high contrast and precision of patterns or texts after laser direct writing for all general-purpose polymers. We believe that this novel strategy to achieve laser direct writing of polymers will have broad application prospects.
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Affiliation(s)
- Jin Feng
- State Key Laboratory of Polymer Materials Engineering of China, Polymer Research Institute , Sichuan University , Chengdu 610065 , China
| | - Jihai Zhang
- State Key Laboratory of Polymer Materials Engineering of China, Polymer Research Institute , Sichuan University , Chengdu 610065 , China
| | - Zhuo Zheng
- State Key Laboratory of Polymer Materials Engineering of China, Polymer Research Institute , Sichuan University , Chengdu 610065 , China
| | - Tao Zhou
- State Key Laboratory of Polymer Materials Engineering of China, Polymer Research Institute , Sichuan University , Chengdu 610065 , China
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Seo S, Kim S, Choi H, Lee J, Yoon H, Piao G, Park J, Jung Y, Song J, Jeong SY, Park H, Lee S. Direct In Situ Growth of Centimeter-Scale Multi-Heterojunction MoS 2/WS 2/WSe 2 Thin-Film Catalyst for Photo-Electrochemical Hydrogen Evolution. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1900301. [PMID: 31380186 PMCID: PMC6662091 DOI: 10.1002/advs.201900301] [Citation(s) in RCA: 27] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/2019] [Revised: 03/29/2019] [Indexed: 05/26/2023]
Abstract
To date, the in situ fabrication of the large-scale van der Waals multi-heterojunction transition metal dichalcogenides (multi-TMDs) is significantly challenging using conventional deposition methods. In this study, vertically stacked centimeter-scale multi-TMD (MoS2/WS2/WSe2 and MoS2/WSe2) thin films are successfully fabricated via sequential pulsed laser deposition (PLD), which is an in situ growth process. The fabricated MoS2/WS2/WSe2 thin film on p-type silicon (p-Si) substrate is designed to form multistaggered gaps (type-II band structure) with p-Si, and this film exhibits excellent spatial and thickness uniformity, which is verified by Raman spectroscopy. Among various application fields, MoS2/WS2/WSe2 is applied to the thin-film catalyst of a p-Si photocathode, to effectively transfer the photogenerated electrons from p-Si to the electrolyte in the photo-electrochemical (PEC) hydrogen evolution. From a comparison between the PEC performances of the homostructure TMDs (homo-TMDs)/p-Si and multi-TMDs/p-Si, it is demonstrated that the multistaggered gap of multi-TMDs/p-Si improves the PEC performance significantly more than the homo-TMDs/p-Si and bare p-Si by effective charge transfer. The new in situ growth process for the fabrication of multi-TMD thin films offers a novel and innovative method for the application of multi-TMD thin films to various fields.
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Affiliation(s)
- Sehun Seo
- School of Materials Science and EngineeringGwangju Institute of Science and TechnologyGwangju61005Republic of Korea
| | - Seungkyu Kim
- School of Materials Science and EngineeringGwangju Institute of Science and TechnologyGwangju61005Republic of Korea
| | - Hojoong Choi
- School of Materials Science and EngineeringGwangju Institute of Science and TechnologyGwangju61005Republic of Korea
| | - Jongmin Lee
- School of Materials Science and EngineeringGwangju Institute of Science and TechnologyGwangju61005Republic of Korea
| | - Hongji Yoon
- School of Materials Science and EngineeringGwangju Institute of Science and TechnologyGwangju61005Republic of Korea
| | - Guangxia Piao
- School of Energy EngineeringKyungpook National UniversityDaegu41566Republic of Korea
| | - Jun‐Cheol Park
- School of Materials Science and EngineeringGwangju Institute of Science and TechnologyGwangju61005Republic of Korea
| | - Yoonsung Jung
- School of Materials Science and EngineeringGwangju Institute of Science and TechnologyGwangju61005Republic of Korea
| | - Jaesun Song
- School of Materials Science and EngineeringGwangju Institute of Science and TechnologyGwangju61005Republic of Korea
| | - Sang Yun Jeong
- School of Materials Science and EngineeringGwangju Institute of Science and TechnologyGwangju61005Republic of Korea
| | - Hyunwoong Park
- School of Energy EngineeringKyungpook National UniversityDaegu41566Republic of Korea
| | - Sanghan Lee
- School of Materials Science and EngineeringGwangju Institute of Science and TechnologyGwangju61005Republic of Korea
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Cheng D, Wang H, Liu B, Wang S, Li Y, Xia Y, Xiong C. Dielectric properties and energy‐storage performance of two‐dimensional molybdenum disulfide nanosheets/polyimide composite films. J Appl Polym Sci 2019. [DOI: 10.1002/app.47991] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/20/2023]
Affiliation(s)
- Dekang Cheng
- School of Materials Science and EngineeringWuhan University of Technology Wuhan 430070 China
| | - Huan Wang
- School of Materials Science and EngineeringWuhan University of Technology Wuhan 430070 China
| | - Bin Liu
- School of Materials Science and EngineeringWuhan University of Technology Wuhan 430070 China
| | - Shan Wang
- School of Materials Science and EngineeringWuhan University of Technology Wuhan 430070 China
- Key Laboratory of Lightweight and Reliability Technology for Engineering Vehicle, Education Department of Hunan ProvinceChangsha University of Science & Technology Changsha 410114 China
| | - Yang Li
- School of Materials Science and EngineeringWuhan University of Technology Wuhan 430070 China
| | - Yushuang Xia
- School of Materials Science and EngineeringWuhan University of Technology Wuhan 430070 China
| | - Chuanxi Xiong
- School of Materials Science and EngineeringWuhan University of Technology Wuhan 430070 China
- State Key Laboratory of Advanced Technology for Materials Synthesis and ProcessingWuhan University of Technology Wuhan 430070 China
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Kim SY, Kwak J, Ciobanu CV, Kwon SY. Recent Developments in Controlled Vapor-Phase Growth of 2D Group 6 Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1804939. [PMID: 30706541 DOI: 10.1002/adma.201804939] [Citation(s) in RCA: 43] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2018] [Revised: 09/20/2018] [Indexed: 06/09/2023]
Abstract
An overview of recent developments in controlled vapor-phase growth of 2D transition metal dichalcogenide (2D TMD) films is presented. Investigations of thin-film formation mechanisms and strategies for realizing 2D TMD films with less-defective large domains are of central importance because single-crystal-like 2D TMDs exhibit the most beneficial electronic and optoelectronic properties. The focus is on the role of the various growth parameters, including strategies for efficiently delivering the precursors, the selection and preparation of the substrate surface as a growth assistant, and the introduction of growth promoters (e.g., organic molecules and alkali metal halides) to facilitate the layered growth of (Mo, W)(S, Se, Te)2 atomic crystals on inert substrates. Critical factors governing the thermodynamic and kinetic factors related to chemical reaction pathways and the growth mechanism are reviewed. With modification of classical nucleation theory, strategies for designing and growing various vertical/lateral TMD-based heterostructures are discussed. Then, several pioneering techniques for facile observation of structural defects in TMDs, which substantially degrade the properties of macroscale TMDs, are introduced. Technical challenges to be overcome and future research directions in the vapor-phase growth of 2D TMDs for heterojunction devices are discussed in light of recent advances in the field.
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Affiliation(s)
- Se-Yang Kim
- School of Materials Science and Engineering & Low-Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Jinsung Kwak
- School of Materials Science and Engineering & Low-Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Cristian V Ciobanu
- Department of Mechanical Engineering & Materials Science Program, Colorado School of Mines, CO, 80401, USA
| | - Soon-Yong Kwon
- School of Materials Science and Engineering & Low-Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
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48
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Singh E, Singh P, Kim KS, Yeom GY, Nalwa HS. Flexible Molybdenum Disulfide (MoS 2) Atomic Layers for Wearable Electronics and Optoelectronics. ACS APPLIED MATERIALS & INTERFACES 2019; 11:11061-11105. [PMID: 30830744 DOI: 10.1021/acsami.8b19859] [Citation(s) in RCA: 91] [Impact Index Per Article: 18.2] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Flexible, stretchable, and bendable materials, including inorganic semiconductors, organic polymers, graphene, and transition metal dichalcogenides (TMDs), are attracting great attention in such areas as wearable electronics, biomedical technologies, foldable displays, and wearable point-of-care biosensors for healthcare. Among a broad range of layered TMDs, atomically thin layered molybdenum disulfide (MoS2) has been of particular interest, due to its exceptional electronic properties, including tunable bandgap and charge carrier mobility. MoS2 atomic layers can be used as a channel or a gate dielectric for fabricating atomically thin field-effect transistors (FETs) for electronic and optoelectronic devices. This review briefly introduces the processing and spectroscopic characterization of large-area MoS2 atomically thin layers. The review summarizes the different strategies in enhancing the charge carrier mobility and switching speed of MoS2 FETs by integrating high-κ dielectrics, encapsulating layers, and other 2D van der Waals layered materials into flexible MoS2 device structures. The photoluminescence (PL) of MoS2 atomic layers has, after chemical treatment, been dramatically improved to near-unity quantum yield. Ultraflexible and wearable active-matrix organic light-emitting diode (AM-OLED) displays and wafer-scale flexible resistive random-access memory (RRAM) arrays have been assembled using flexible MoS2 transistors. The review discusses the overall recent progress made in developing MoS2 based flexible FETs, OLED displays, nonvolatile memory (NVM) devices, piezoelectric nanogenerators (PNGs), and sensors for wearable electronic and optoelectronic devices. Finally, it outlines the perspectives and tremendous opportunities offered by a large family of atomically thin-layered TMDs.
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Affiliation(s)
- Eric Singh
- Department of Computer Science , Stanford University , Stanford , California 94305 , United States
| | - Pragya Singh
- Department of Electrical Engineering and Computer Science , National Chiao Tung University , Hsinchu 30010 , Taiwan , R.O.C
| | - Ki Seok Kim
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066 Seobu-ro, Jangan-gu , Suwon-si , Gyeonggi-do 16419 , South Korea
| | - Geun Young Yeom
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066 Seobu-ro, Jangan-gu , Suwon-si , Gyeonggi-do 16419 , South Korea
- SKKU Advanced Institute of Nano Technology , Sungkyunkwan University , 2066 Seobu-ro, Jangan-gu , Suwon-si , Gyeonggi-do 16419 , South Korea
| | - Hari Singh Nalwa
- Advanced Technology Research , 26650 The Old Road, Suite 208 , Valencia , California 91381 , United States
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Han T, Liu H, Wang S, Chen S, Li W, Yang X. Probing the Growth Improvement of Large-Size High Quality Monolayer MoS₂ by APCVD. NANOMATERIALS 2019; 9:nano9030433. [PMID: 30875768 PMCID: PMC6474001 DOI: 10.3390/nano9030433] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/10/2019] [Revised: 03/08/2019] [Accepted: 03/12/2019] [Indexed: 11/16/2022]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) have attracted attention from researchers in recent years. Monolayer molybdenum disulfide (MoS₂) is the direct band gap two-dimensional crystal with excellent physical and electrical properties. Monolayer MoS₂ can effectively compensate for the lack of band gap of graphene in the field of nano-electronic devices, which is widely used in catalysis, transistors, optoelectronic devices, and integrated circuits. Therefore, it is critical to obtain high-quality, large size monolayer MoS₂. The large-area uniform high-quality monolayer MoS₂ is successfully grown on an SiO₂/Si substrate with oxygen plasma treatment and graphene quantum dot solution by atmospheric pressure chemical vapor deposition (APCVD) in this paper. In addition, the effects of substrate processing conditions, such as oxygen plasma treatment time, power, and dosage of graphene quantum dot solution on growth quality and the area of the monolayer of MoS₂, are studied systematically, which would contribute to the preparation of large-area high-quality monolayer MoS₂. Analysis and characterization of monolayer MoS₂ are carried out by Optical Microscopy, AFM, XPS, Raman, and Photoluminescence Spectroscopy. The results show that monolayer MoS₂ is a large-area, uniform, and triangular with a side length of 200 μm, and it is very effective to treat the SiO₂/Si substrate by oxygen plasma and graphene quantum dot solution, which would help the fabrication of optoelectronic devices.
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Affiliation(s)
- Tao Han
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, the School of Microelectronics, Xidian University, Xi'an 710071, China.
| | - Hongxia Liu
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, the School of Microelectronics, Xidian University, Xi'an 710071, China.
| | - Shulong Wang
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, the School of Microelectronics, Xidian University, Xi'an 710071, China.
| | - Shupeng Chen
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, the School of Microelectronics, Xidian University, Xi'an 710071, China.
| | - Wei Li
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, the School of Microelectronics, Xidian University, Xi'an 710071, China.
| | - Xiaoli Yang
- The School of Mathematics and Statistics, Xidian University, Xi'an 710071, China.
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He J, Tao L, Zhang H, Zhou B, Li J. Emerging 2D materials beyond graphene for ultrashort pulse generation in fiber lasers. NANOSCALE 2019; 11:2577-2593. [PMID: 30693933 DOI: 10.1039/c8nr09368g] [Citation(s) in RCA: 68] [Impact Index Per Article: 13.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Ultrafast fiber lasers have significant applications in ultra-precision manufacturing, medical diagnostics, medical treatment, precision measurement and astronomical detection, owing to their ultra-short pulse width and ultra-high peak-power. Since graphene was first explored as an optical saturable absorber for passively mode-locked lasers in 2009, many other 2D materials beyond graphene, including phosphorene, antimonene, bismuthene, transition metal dichalcogenides (TMDs), topological insulators (TIs), metal-organic frameworks (MOFs) and MXenes, have been successively explored, resulting in rapid development of novel 2D materials-based saturable absorbers. Herein, we review the latest progress of the emerging 2D materials beyond graphene for passively mode-locked fiber laser application. These 2D materials are classified into mono-elemental, dual-elemental and multi-elemental 2D materials. The atomic structure, band structure, nonlinear optical properties, and preparation methods of 2D materials are summarized. Diverse integration strategies for applying 2D materials into fiber laser systems are introduced, and the mode-locking performance of the 2D materials-based fiber lasers working at 1-3 μm are discussed. Finally, the perspectives and challenges facing 2D materials-based mode-locked fiber lasers are highlighted.
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Affiliation(s)
- Junshan He
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China.
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