1
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Fan J, Xu Z, Qi P, Guo C. Peptide-Based Electrical Array Sensor for Discriminating Heavy Metal Ions. Anal Chem 2024. [PMID: 38994635 DOI: 10.1021/acs.analchem.4c02317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/13/2024]
Abstract
Charge transport in molecular junctions provides an excellent way to investigate the response of molecules to intrinsic changes and external stimuli, exhibiting powerful potential for developing sensors. However, achieving multianalyte recognition remains a challenge. Herein, we innovatively developed an electrical array sensor based on peptide self-assembled layers for discriminating various heavy metal ions. Three peptide sequences were designed as sensing units with varying binding affinities for different metal ions. Electrical measurements demonstrated that different metal ions diversely affect the charge transport of peptide junctions. By using principal component analysis, a clear discrimination between the five kinds of heavy metal ions can be achieved. In the analysis of real samples, the array sensor showed a reliable anti-interference capability. The array sensor offers possibilities for large-area molecular junctions to construct functional molecular sensing devices.
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Affiliation(s)
- Jinlei Fan
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, Hubei 430072, P. R. China
| | - Zhongchen Xu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, Hubei 430072, P. R. China
| | - Pan Qi
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, Hubei 430072, P. R. China
| | - Cunlan Guo
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, Hubei 430072, P. R. China
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2
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Rashid U, Bro-Jørgensen W, Harilal KB, Sreelakshmi PA, Mondal RR, Chittari Pisharam V, Parida KN, Geetharani K, Hamill JM, Kaliginedi V. Chemistry of the Au-Thiol Interface through the Lens of Single-Molecule Flicker Noise Measurements. J Am Chem Soc 2024; 146:9063-9073. [PMID: 38381861 PMCID: PMC10995995 DOI: 10.1021/jacs.3c14079] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 02/01/2024] [Accepted: 02/01/2024] [Indexed: 02/23/2024]
Abstract
Chemistry of the Au-S interface at the nanoscale is one of the most complex systems to study, as the nature and strength of the Au-S bond change under different experimental conditions. In this study, using mechanically controlled break junction technique, we probed the conductance and analyzed Flicker noise for several aliphatic and aromatic thiol derivatives and thioethers. We demonstrate that Flicker noise can be used to unambiguously differentiate between stronger chemisorption (Au-SR) and weaker physisorption (Au-SRR') type interactions. The Flicker noise measurements indicate that the gold rearrangement in chemisorbed Au-SR junctions resembles that of the Au rearrangement in pure Au-Au metal contact breaking, which is independent of the molecular backbone structure and the resulting conductance. In contrast, thioethers showed the formation of a weaker physisorbed Au-SRR' type bond, and the Flicker noise measurement indicates the changes in the Au-anchoring group interface but not the Au-Au rearrangement like that in the Au-SR case. Additionally, by employing single-molecular conductance and Flicker noise analysis, we have probed the interfacial electric field-catalyzed ring-opening reaction of cyclic thioether under mild environmental conditions, which otherwise requires harsh chemical conditions for cleavage of the C-S bond. All of our conductance measurements are complemented by NEGF transport calculations. This study illustrates that the single-molecule conductance, together with the Flicker noise measurements can be used to tune and monitor chemical reactions at the single-molecule level.
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Affiliation(s)
- Umar Rashid
- Department
of Inorganic and Physical Chemistry, Indian
Institute of Science, Bangalore 560012, India
| | - William Bro-Jørgensen
- Department
of Chemistry and Nano-Science Center, University
of Copenhagen, Universitetsparken
5, DK-2100 Copenhagen
Ø, Denmark
| | - KB Harilal
- School
of Chemistry, Indian Institute of Science
Education and Research (IISER), Thiruvananthapuram 695551, Kerala, India
| | - PA Sreelakshmi
- Department
of Inorganic and Physical Chemistry, Indian
Institute of Science, Bangalore 560012, India
| | - Reetu Rani Mondal
- Department
of Inorganic and Physical Chemistry, Indian
Institute of Science, Bangalore 560012, India
| | - Varun Chittari Pisharam
- School
of Chemistry, Indian Institute of Science
Education and Research (IISER), Thiruvananthapuram 695551, Kerala, India
| | - Keshaba N. Parida
- School
of Chemistry, Indian Institute of Science
Education and Research (IISER), Thiruvananthapuram 695551, Kerala, India
| | - K. Geetharani
- Department
of Inorganic and Physical Chemistry, Indian
Institute of Science, Bangalore 560012, India
| | - Joseph M. Hamill
- Department
of Chemistry and Nano-Science Center, University
of Copenhagen, Universitetsparken
5, DK-2100 Copenhagen
Ø, Denmark
| | - Veerabhadrarao Kaliginedi
- Department
of Inorganic and Physical Chemistry, Indian
Institute of Science, Bangalore 560012, India
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3
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Wang F, Shen W, Shui Y, Chen J, Wang H, Wang R, Qin Y, Wang X, Wan J, Zhang M, Lu X, Yang T, Song F. Electrically controlled nonvolatile switching of single-atom magnetism in a Dy@C 84 single-molecule transistor. Nat Commun 2024; 15:2450. [PMID: 38503743 PMCID: PMC10951203 DOI: 10.1038/s41467-024-46854-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/23/2023] [Accepted: 03/12/2024] [Indexed: 03/21/2024] Open
Abstract
Single-atom magnetism switching is a key technique towards the ultimate data storage density of computer hard disks and has been conceptually realized by leveraging the spin bistability of a magnetic atom under a scanning tunnelling microscope. However, it has rarely been applied to solid-state transistors, an advancement that would be highly desirable for enabling various applications. Here, we demonstrate realization of the electrically controlled Zeeman effect in Dy@C84 single-molecule transistors, thus revealing a transition in the magnetic moment from 3.8μ B to 5.1μ B for the ground-state GN at an electric field strength of 3 - 10 MV/cm. The consequent magnetoresistance significantly increases from 600% to 1100% at the resonant tunneling point. Density functional theory calculations further corroborate our realization of nonvolatile switching of single-atom magnetism, and the switching stability emanates from an energy barrier of 92 meV for atomic relaxation. These results highlight the potential of using endohedral metallofullerenes for high-temperature, high-stability, high-speed, and compact single-atom magnetic data storage.
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Affiliation(s)
- Feng Wang
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
- Institute of Atom Manufacturing, Nanjing University, Suzhou, 215163, China
| | - Wangqiang Shen
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- School of Materials Science and Engineering, Hefei University of Technology, Hefei, 230009, China
| | - Yuan Shui
- MOE Key Laboratory for Non-Equilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Jun Chen
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
- Institute of Atom Manufacturing, Nanjing University, Suzhou, 215163, China
| | - Huaiqiang Wang
- Center for Quantum Transport and Thermal Energy Science, School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China
| | - Rui Wang
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
| | - Yuyuan Qin
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
| | - Xuefeng Wang
- State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Jianguo Wan
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
| | - Minhao Zhang
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China.
- Institute of Atom Manufacturing, Nanjing University, Suzhou, 215163, China.
| | - Xing Lu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Tao Yang
- MOE Key Laboratory for Non-Equilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, Xi'an, 710049, China.
| | - Fengqi Song
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China.
- Institute of Atom Manufacturing, Nanjing University, Suzhou, 215163, China.
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4
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Taherinia D, Frisbie CD. Deciphering I-V characteristics in molecular electronics with the benefit of an analytical model. Phys Chem Chem Phys 2023; 25:32305-32316. [PMID: 37991400 DOI: 10.1039/d3cp03877g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2023]
Abstract
We share our perspective that a simple analytical model for electron tunneling in molecular junctions can greatly aid quantitative analysis of experimental data in molecular electronics. In particular, the single-level model (SLM), derived from first principles, provides a precise prediction for the current-voltage (I-V) characteristics in terms of key electronic structure parameters, which in turn depend on the molecular and contact architecture. SLM analysis thus facilitates understanding of structure-property relationships and provides metrics that can be compared across different types of tunnel junctions, as we illustrate with several examples.
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Affiliation(s)
- Davood Taherinia
- Department of Chemistry, Sharif University of Technology, Tehran 11155-9516, Iran
| | - C Daniel Frisbie
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455, USA.
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5
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Aragonès AC, Aravena D, Ugalde JM, Medina E, Gutierrez R, Ruiz E, Mujica V, Díez‐Pérez I. Magnetoresistive Single‐Molecule Junctions: the Role of the
Spinterface
and the
CISS
Effect. Isr J Chem 2022. [DOI: 10.1002/ijch.202200090] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Affiliation(s)
- Albert C. Aragonès
- Departament de Ciència de Materials i Química Física Universitat de Barcelona Marti i Franquès 1 08028 Barcelona Spain
- Institut de Química Teòrica i Computacional (IQTC) Universitat de Barcelona Diagonal 645 08028 Barcelona Spain
| | - Daniel Aravena
- Departamento de Química de los Materiales Facultad de Química y Biología Universidad de Santiago de Chile Casilla 40, Correo 33 Santiago 9170022 Chile
| | - Jesús M. Ugalde
- Kimika Fakultatea Euskal Herriko Unibertsitatea (UPV/EHU) P.K. 1072 20018 Donostia, Euskadi Spain
| | - Ernesto Medina
- Departamento de Física Colegio de Ciencias e Ingeniería Universidad San Francisco de Quito Diego de Robles y Vía Interoceánica Quito 170901 Ecuador
| | - Rafael Gutierrez
- Institute for Materials Science and Max Bergmann Center of Biomaterials Dresden University of Technology 01062 Dresden Germany
| | - Eliseo Ruiz
- Institut de Química Teòrica i Computacional (IQTC) Universitat de Barcelona Diagonal 645 08028 Barcelona Spain
- Departament de Química Inorgànica i Orgànica Universitat de Barcelona Diagonal 645 08028 Barcelona Spain
| | - Vladimiro Mujica
- School of Molecular Sciences Arizona State University Tempe Arizona 85287 USA
| | - Ismael Díez‐Pérez
- Department of Chemistry Faculty of Natural & Mathematical Sciences King's College London Britannia House 7 Trinity Street London SE1 1DB UK
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6
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Mitra G, Low JZ, Wei S, Francisco KR, Deffner M, Herrmann C, Campos LM, Scheer E. Interplay between Magnetoresistance and Kondo Resonance in Radical Single-Molecule Junctions. NANO LETTERS 2022; 22:5773-5779. [PMID: 35849010 DOI: 10.1021/acs.nanolett.2c01199] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
We report transport measurements on tunable single-molecule junctions of the organic perchlorotrityl radical molecule, contacted with gold electrodes at low temperature. The current-voltage characteristics of a subset of junctions shows zero-bias anomalies due to the Kondo effect and in addition elevated magnetoresistance (MR). Junctions without Kondo resonance reveal a much stronger MR. Furthermore, we show that the amplitude of the MR can be tuned by mechanically stretching the junction. On the basis of these findings, we attribute the high MR to an interference effect involving spin-dependent scattering at the metal-molecule interface and assign the Kondo effect to the unpaired spin located in the center of the molecule in asymmetric junctions.
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Affiliation(s)
- Gautam Mitra
- Department of Physics, University of Konstanz, 78457 Konstanz, Germany
| | - Jonathan Z Low
- Department of Chemistry, Columbia University, New York, New York 10027, United States
- Singapore Institute of Manufacturing Technology, 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Sujun Wei
- Department of Chemistry, Queensborough Community College of the City University of New York, Bayside, New York 11364, United States
| | - Karol R Francisco
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Michael Deffner
- Institut für Anorganische und Angewandte Chemie, The Hamburg Centre for Ultrafast Imaging, 22761 Hamburg, Germany
| | - Carmen Herrmann
- Institut für Anorganische und Angewandte Chemie, The Hamburg Centre for Ultrafast Imaging, 22761 Hamburg, Germany
| | - Luis M Campos
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Elke Scheer
- Department of Physics, University of Konstanz, 78457 Konstanz, Germany
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7
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Aiello CD, Abendroth JM, Abbas M, Afanasev A, Agarwal S, Banerjee AS, Beratan DN, Belling JN, Berche B, Botana A, Caram JR, Celardo GL, Cuniberti G, Garcia-Etxarri A, Dianat A, Diez-Perez I, Guo Y, Gutierrez R, Herrmann C, Hihath J, Kale S, Kurian P, Lai YC, Liu T, Lopez A, Medina E, Mujica V, Naaman R, Noormandipour M, Palma JL, Paltiel Y, Petuskey W, Ribeiro-Silva JC, Saenz JJ, Santos EJG, Solyanik-Gorgone M, Sorger VJ, Stemer DM, Ugalde JM, Valdes-Curiel A, Varela S, Waldeck DH, Wasielewski MR, Weiss PS, Zacharias H, Wang QH. A Chirality-Based Quantum Leap. ACS NANO 2022; 16:4989-5035. [PMID: 35318848 PMCID: PMC9278663 DOI: 10.1021/acsnano.1c01347] [Citation(s) in RCA: 58] [Impact Index Per Article: 29.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
There is increasing interest in the study of chiral degrees of freedom occurring in matter and in electromagnetic fields. Opportunities in quantum sciences will likely exploit two main areas that are the focus of this Review: (1) recent observations of the chiral-induced spin selectivity (CISS) effect in chiral molecules and engineered nanomaterials and (2) rapidly evolving nanophotonic strategies designed to amplify chiral light-matter interactions. On the one hand, the CISS effect underpins the observation that charge transport through nanoscopic chiral structures favors a particular electronic spin orientation, resulting in large room-temperature spin polarizations. Observations of the CISS effect suggest opportunities for spin control and for the design and fabrication of room-temperature quantum devices from the bottom up, with atomic-scale precision and molecular modularity. On the other hand, chiral-optical effects that depend on both spin- and orbital-angular momentum of photons could offer key advantages in all-optical and quantum information technologies. In particular, amplification of these chiral light-matter interactions using rationally designed plasmonic and dielectric nanomaterials provide approaches to manipulate light intensity, polarization, and phase in confined nanoscale geometries. Any technology that relies on optimal charge transport, or optical control and readout, including quantum devices for logic, sensing, and storage, may benefit from chiral quantum properties. These properties can be theoretically and experimentally investigated from a quantum information perspective, which has not yet been fully developed. There are uncharted implications for the quantum sciences once chiral couplings can be engineered to control the storage, transduction, and manipulation of quantum information. This forward-looking Review provides a survey of the experimental and theoretical fundamentals of chiral-influenced quantum effects and presents a vision for their possible future roles in enabling room-temperature quantum technologies.
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Affiliation(s)
- Clarice D. Aiello
- California
NanoSystems Institute, University of California,
Los Angeles, Los Angeles, California 90095, United States
- Department
of Electrical and Computer Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - John M. Abendroth
- Laboratory
for Solid State Physics, ETH Zürich, Zürich 8093, Switzerland
| | - Muneer Abbas
- Department
of Microbiology, Howard University, Washington, D.C. 20059, United States
| | - Andrei Afanasev
- Department
of Physics, George Washington University, Washington, D.C. 20052, United States
| | - Shivang Agarwal
- Department
of Electrical and Computer Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Amartya S. Banerjee
- California
NanoSystems Institute, University of California,
Los Angeles, Los Angeles, California 90095, United States
- Department
of Materials Science and Engineering, University
of California, Los Angeles, Los Angeles, California 90095, United States
| | - David N. Beratan
- Departments
of Chemistry, Biochemistry, and Physics, Duke University, Durham, North Carolina 27708, United States
| | - Jason N. Belling
- California
NanoSystems Institute, University of California,
Los Angeles, Los Angeles, California 90095, United States
- Department
of Chemistry and Biochemistry, University
of California, Los Angeles, Los Angeles, California 90095, United States
| | - Bertrand Berche
- Laboratoire
de Physique et Chimie Théoriques, UMR Université de Lorraine-CNRS, 7019 54506 Vandœuvre les
Nancy, France
| | - Antia Botana
- Department
of Physics, Arizona State University, Tempe, Arizona 85287, United States
| | - Justin R. Caram
- Department
of Chemistry and Biochemistry, University
of California, Los Angeles, Los Angeles, California 90095, United States
| | - Giuseppe Luca Celardo
- Institute
of Physics, Benemerita Universidad Autonoma
de Puebla, Apartado Postal J-48, 72570, Mexico
- Department
of Physics and Astronomy, University of
Florence, 50019 Sesto Fiorentino, Italy
| | - Gianaurelio Cuniberti
- Institute
for Materials Science and Max Bergmann Center of Biomaterials, Dresden University of Technology, 01062 Dresden, Germany
| | - Aitzol Garcia-Etxarri
- Donostia
International Physics Center, Paseo Manuel de Lardizabal 4, 20018 Donostia, San Sebastian, Spain
- IKERBASQUE,
Basque Foundation for Science, Maria Diaz de Haro 3, 48013 Bilbao, Spain
| | - Arezoo Dianat
- Institute
for Materials Science and Max Bergmann Center of Biomaterials, Dresden University of Technology, 01062 Dresden, Germany
| | - Ismael Diez-Perez
- Department
of Chemistry, Faculty of Natural and Mathematical Sciences, King’s College London, 7 Trinity Street, London SE1 1DB, United Kingdom
| | - Yuqi Guo
- School
for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Rafael Gutierrez
- Institute
for Materials Science and Max Bergmann Center of Biomaterials, Dresden University of Technology, 01062 Dresden, Germany
| | - Carmen Herrmann
- Department
of Chemistry, University of Hamburg, 20146 Hamburg, Germany
| | - Joshua Hihath
- Department
of Electrical and Computer Engineering, University of California, Davis, Davis, California 95616, United States
| | - Suneet Kale
- School
of Molecular Sciences, Arizona State University, Tempe, Arizona 85287, United States
| | - Philip Kurian
- Quantum
Biology Laboratory, Graduate School, Howard
University, Washington, D.C. 20059, United States
| | - Ying-Cheng Lai
- School
of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, United States
| | - Tianhan Liu
- California
NanoSystems Institute, University of California,
Los Angeles, Los Angeles, California 90095, United States
- Department
of Chemistry and Biochemistry, University
of California, Los Angeles, Los Angeles, California 90095, United States
| | - Alexander Lopez
- Escuela
Superior Politécnica del Litoral, ESPOL, Campus Gustavo Galindo Km. 30.5 Vía Perimetral, PO Box 09-01-5863, Guayaquil 090902, Ecuador
| | - Ernesto Medina
- Departamento
de Física, Colegio de Ciencias e Ingeniería, Universidad San Francisco de Quito, Av. Diego de Robles
y Vía Interoceánica, Quito 170901, Ecuador
| | - Vladimiro Mujica
- School
of Molecular Sciences, Arizona State University, Tempe, Arizona 85287, United States
- Kimika
Fakultatea, Euskal Herriko Unibertsitatea, 20080 Donostia, Euskadi, Spain
| | - Ron Naaman
- Department
of Chemical and Biological Physics, Weizmann
Institute of Science, Rehovot 76100, Israel
| | - Mohammadreza Noormandipour
- Department
of Electrical and Computer Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
- TCM Group,
Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Julio L. Palma
- Department
of Chemistry, Pennsylvania State University, Lemont Furnace, Pennsylvania 15456, United States
| | - Yossi Paltiel
- Applied
Physics Department and the Center for Nano-Science and Nano-Technology, Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - William Petuskey
- School
of Molecular Sciences, Arizona State University, Tempe, Arizona 85287, United States
| | - João Carlos Ribeiro-Silva
- Laboratory
of Genetics and Molecular Cardiology, Heart Institute, University of São Paulo Medical School, 05508-900 São
Paulo, Brazil
| | - Juan José Saenz
- Donostia
International Physics Center, Paseo Manuel de Lardizabal 4, 20018 Donostia, San Sebastian, Spain
- IKERBASQUE,
Basque Foundation for Science, Maria Diaz de Haro 3, 48013 Bilbao, Spain
| | - Elton J. G. Santos
- Institute
for Condensed Matter Physics and Complex Systems, School of Physics
and Astronomy, The University of Edinburgh, Edinburgh EH9 3FD, United Kingdom
- Higgs Centre
for Theoretical Physics, The University
of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
| | - Maria Solyanik-Gorgone
- Department
of Electrical and Computer Engineering, George Washington University, Washington, D.C. 20052, United States
| | - Volker J. Sorger
- Department
of Electrical and Computer Engineering, George Washington University, Washington, D.C. 20052, United States
| | - Dominik M. Stemer
- California
NanoSystems Institute, University of California,
Los Angeles, Los Angeles, California 90095, United States
- Department
of Materials Science and Engineering, University
of California, Los Angeles, Los Angeles, California 90095, United States
| | - Jesus M. Ugalde
- Kimika
Fakultatea, Euskal Herriko Unibertsitatea, 20080 Donostia, Euskadi, Spain
| | - Ana Valdes-Curiel
- California
NanoSystems Institute, University of California,
Los Angeles, Los Angeles, California 90095, United States
- Department
of Electrical and Computer Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Solmar Varela
- School
of Chemical Sciences and Engineering, Yachay
Tech University, 100119 Urcuquí, Ecuador
| | - David H. Waldeck
- Department
of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Michael R. Wasielewski
- Department
of Chemistry, Center for Molecular Quantum Transduction, and Institute
for Sustainability and Energy at Northwestern, Northwestern University, Evanston, Illinois 60208-3113, United States
| | - Paul S. Weiss
- California
NanoSystems Institute, University of California,
Los Angeles, Los Angeles, California 90095, United States
- Department
of Materials Science and Engineering, University
of California, Los Angeles, Los Angeles, California 90095, United States
- Department
of Chemistry and Biochemistry, University
of California, Los Angeles, Los Angeles, California 90095, United States
- Department
of Bioengineering, University of California,
Los Angeles, Los Angeles, California, 90095, United States
| | - Helmut Zacharias
- Center
for Soft Nanoscience, University of Münster, 48149 Münster, Germany
| | - Qing Hua Wang
- School
for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
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8
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Tian L, Martine E, Yu X, Hu W. Amine-Anchored Aromatic Self-Assembled Monolayer Junction: Structure and Electric Transport Properties. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2021; 37:12223-12233. [PMID: 34606290 DOI: 10.1021/acs.langmuir.1c02194] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We studied the structure and transport properties of aromatic amine self-assembled monolayers (NH2-SAMs) on an Au surface. The oligophenylene and oligoacene amines with variable lengths can form a densely packed and uniform monolayer under proper assembly conditions. Molecular junctions incorporating an eutectic Ga-In (EGaIn) top electrode were used to characterize the charge transport properties of the amine monolayer. The current density J of the junction decreases exponentially with the molecular length (d), as J = J0 exp(-βd), which is a sign of tunneling transport, with indistinguishable values of J0 and β for NH2-SAMs of oligophenylene and oligoacene, indicating a similar molecule-electrode contact and tunneling barrier for two groups of molecules. Compared with the oligophenylene and oligoacene molecules with thiol (SH) as the anchor group, a similar β value (∼0.35 Å-1) of the aromatic NH2-SAM suggests a similar tunneling barrier, while a lower (by 2 orders of magnitude) injection current J0 is attributed to lower electronic coupling Γ of the amine group with the electrode. These observations are further supported by single-level tunneling model fitting. Our study here demonstrates the NH2-SAMs can work as an effective active layer for molecular junctions, and provide key physical parameters for the charge transport, paving the road for their applications in functional devices.
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Affiliation(s)
- Lixian Tian
- Tianjin Key Laboratory of Molecular Optoelectronic Science, School of Science, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, China
| | - Esther Martine
- Tianjin Key Laboratory of Molecular Optoelectronic Science, School of Science, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, China
| | - Xi Yu
- Tianjin Key Laboratory of Molecular Optoelectronic Science, School of Science, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Science, School of Science, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, China
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9
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Li JJ, Chen ZB, Wang YH, Zhou XS, Xie LQ, Shi Z, Liu JX, Yan JW, Mao BW. Single-molecule anisotropic magnetoresistance at room temperature: Influence of molecular structure. Electrochim Acta 2021. [DOI: 10.1016/j.electacta.2021.138760] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
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10
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Feng Y, Chen H, Wu Y, Que I, Tamburini F, Baldazzi F, Chang Y, Zhang H. Optical imaging and pH-awakening therapy of deep tissue cancer based on specific upconversion nanophotosensitizers. Biomaterials 2020; 230:119637. [DOI: 10.1016/j.biomaterials.2019.119637] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/21/2019] [Revised: 11/05/2019] [Accepted: 11/18/2019] [Indexed: 01/07/2023]
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11
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Tunable giant magnetoresistance in a single-molecule junction. Nat Commun 2019; 10:3599. [PMID: 31399599 PMCID: PMC6689026 DOI: 10.1038/s41467-019-11587-x] [Citation(s) in RCA: 28] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/05/2019] [Accepted: 07/09/2019] [Indexed: 11/23/2022] Open
Abstract
Controlling electronic transport through a single-molecule junction is crucial for molecular electronics or spintronics. In magnetic molecular devices, the spin degree-of-freedom can be used to this end since the magnetic properties of the magnetic ion centers fundamentally impact the transport through the molecules. Here we demonstrate that the electron pathway in a single-molecule device can be selected between two molecular orbitals by varying a magnetic field, giving rise to a tunable anisotropic magnetoresistance up to 93%. The unique tunability of the electron pathways is due to the magnetic reorientation of the transition metal center, resulting in a re-hybridization of molecular orbitals. We obtain the tunneling electron pathways by Kondo effect, which manifests either as a peak or a dip line shape. The energy changes of these spin-reorientations are remarkably low and less than one millielectronvolt. The large tunable anisotropic magnetoresistance could be used to control electronic transport in molecular spintronics. Molecular electronics or spintronics relies on manipulating the electronic transport through microscopic molecule structures. Here the authors demonstrate the selective electron pathway in single-molecule device by magnetic field which enables a tunable anisotropic magnetoresistance up to 93%.
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12
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Garner MH, Jensen A, Hyllested LOH, Solomon GC. Helical orbitals and circular currents in linear carbon wires. Chem Sci 2019; 10:4598-4608. [PMID: 31123570 PMCID: PMC6496982 DOI: 10.1039/c8sc05464a] [Citation(s) in RCA: 28] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/06/2018] [Accepted: 03/14/2019] [Indexed: 01/07/2023] Open
Abstract
Disubstituted odd-carbon cumulenes are linear carbon wires with helical π-orbitals, which results in circular current around the wire.
Disubstituted odd-carbon cumulenes are linear carbon wires with near-degenerate helical π-orbitals. Such cumulenes are chiral molecules but their electronic structure consists of helical orbitals of both chiralities. For these helical molecular orbitals to give rise to experimentally observable effects, the near-degenerate orbitals of opposite helicities must be split. Here we show how pyramidalized single-faced π-donors, such as the amine substituent, provide a strategy for splitting the helical molecular orbitals. The chirality induced by the amine substituents allow for systematic control of the helicity of the frontier orbitals. We examine how the helical orbitals in odd-carbon cumulenes control the coherent electron transport properties, and we explicitly predict two modes in the experimental single-molecule conductance for these molecules. We also show that the current density through these linear wires exhibits strong circular currents. The direction of the circular currents is systematically controlled by the helicity of the frontier molecular orbitals, and is therefore altered by changing between the conformations of the molecule. Furthermore, the circular currents are subject to a full ring-reversal around antiresonances in the Landauer transmission, emphasizing the relation to destructive quantum interference. With circular currents present around truly linear carbon wires, cumulenes are promising candidates for novel applications in molecular electronics.
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Affiliation(s)
- Marc H Garner
- Department of Chemistry , Nano-Science Center , University of Copenhagen , Universitetsparken 5 , DK-2100 , Copenhagen Ø , Denmark . ;
| | - Anders Jensen
- Department of Chemistry , Nano-Science Center , University of Copenhagen , Universitetsparken 5 , DK-2100 , Copenhagen Ø , Denmark . ;
| | - Louise O H Hyllested
- Department of Chemistry , Nano-Science Center , University of Copenhagen , Universitetsparken 5 , DK-2100 , Copenhagen Ø , Denmark . ;
| | - Gemma C Solomon
- Department of Chemistry , Nano-Science Center , University of Copenhagen , Universitetsparken 5 , DK-2100 , Copenhagen Ø , Denmark . ;
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13
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Basu TS, Diesch S, Scheer E. Single-electron transport through stabilised silicon nanocrystals. NANOSCALE 2018; 10:13949-13958. [PMID: 29781492 DOI: 10.1039/c8nr01552j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We have fabricated organically capped stable luminescent silicon nanocrystals with narrow size distribution by a novel, high yield and easy to implement technique. We demonstrate transport measurements of individual silicon nanocrystals by scanning tunnelling microscopy at a low temperature in a double-barrier tunnel junction arrangement in which we observed pronounced single electron tunnelling effects. The tunnelling spectroscopy of these nanocrystals with different diameters reveals quantum confinement induced bandgap modifications. Furthermore, from the features in the tunnelling spectra, we differentiate several energy contributions arising from electronic interactions inside the nanocrystal. By applying a magnetic field, we have detected a variation in the differential conductance profile that we attribute to arising from higher order tunnelling processes. We have also systematically simulated our experimental data with the Orthodox theory, and the results show good agreement with the experiment. The study establishes a correlation between the nanocrystal size and quantum confinement induced band-structure modifications which will pave the way to devise tailored nanocrystals.
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Affiliation(s)
- Tuhin Shuvra Basu
- Department of Physics, University of Konstanz, 78457 Konstanz, Germany.
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14
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Koley S, Chakrabarti S. Large Negative Differential Resistance and Rectification from a Donor-σ-Acceptor Molecule in the Presence of Dissimilar Electrodes. Chemistry 2018; 24:5876-5882. [DOI: 10.1002/chem.201705683] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/30/2017] [Indexed: 11/08/2022]
Affiliation(s)
- Sayantanu Koley
- Department of Chemistry; University of Calcutta; 92, A. P. C. Road Kolkata 700009 India
| | - Swapan Chakrabarti
- Department of Chemistry; University of Calcutta; 92, A. P. C. Road Kolkata 700009 India
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15
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Smith CE, Xie Z, Bâldea I, Frisbie CD. Work function and temperature dependence of electron tunneling through an N-type perylene diimide molecular junction with isocyanide surface linkers. NANOSCALE 2018; 10:964-975. [PMID: 29192925 DOI: 10.1039/c7nr06461f] [Citation(s) in RCA: 30] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Conducting probe atomic force microscopy (CP-AFM) was employed to examine electron tunneling in self-assembled monolayer (SAM) junctions. A 2.3 nm long perylene tetracarboxylic acid diimide (PDI) acceptor molecule equipped with isocyanide linker groups was synthesized, adsorbed onto Ag, Au and Pt substrates, and the current-voltage (I-V) properties were measured by CP-AFM. The dependence of the low-bias resistance (R) on contact work function indicates that transport is LUMO-assisted ('n-type behavior'). A single-level tunneling model combined with transition voltage spectroscopy (TVS) was employed to analyze the experimental I-V curves and to extract the effective LUMO position εl = ELUMO - EF and the effective electronic coupling (Γ) between the PDI redox core and the contacts. This analysis revealed a strong Fermi level (EF) pinning effect in all the junctions, likely due to interface dipoles that significantly increased with increasing contact work function, as revealed by scanning Kelvin probe microscopy (SKPM). Furthermore, the temperature (T) dependence of R was found to be substantial. For Pt/Pt junctions, R varied more than two orders of magnitude in the range 248 K < T < 338 K. Importantly, the R(T) data are consistent with a single step electron tunneling mechanism and allow independent determination of εl, giving values compatible with estimates of εl based on analysis of the full I-V data. Theoretical analysis revealed a general criterion to unambiguously rule out a two-step transport mechanism: namely, if measured resistance data exhibit a pronounced Arrhenius-type temperature dependence, a two-step electron transfer scenario should be excluded in cases where the activation energy depends on contact metallurgy. Overall, our results indicate (1) the generality of the Fermi level pinning phenomenon in molecular junctions, (2) the utility of employing the single level tunneling model for determining essential electronic structure parameters (εl and Γ), and (3) the importance of changing the nature of the contacts to verify transport mechanisms.
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Affiliation(s)
- Christopher E Smith
- Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455, USA
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16
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Suda M. A New Photo-Control Method for Organic–Inorganic Interface Dipoles and Its Application to Photo-Controllable Molecular Devices. BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN 2018. [DOI: 10.1246/bcsj.20170283] [Citation(s) in RCA: 30] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Masayuki Suda
- Institute for Molecular Science, 38, Nishigo-naka, Myodaiji, Okazaki, Aichi 444-8585
- RIKEN, 2-1, Hirosawa, Wako, Saitama 351-0198
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17
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Zhao P, Li J, Jin H, Yu L, Huang B, Ying D. Designing lateral spintronic devices with giant tunnel magnetoresistance and perfect spin injection efficiency based on transition metal dichalcogenides. Phys Chem Chem Phys 2018; 20:10286-10291. [DOI: 10.1039/c8cp00557e] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
A robust spin-filtering device based on two-dimensional TMDs.
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Affiliation(s)
- Pei Zhao
- School of Physics, State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- People's Republic of China
| | - Jianwei Li
- College of Physics and Energy
- Shenzhen Key Laboratory of Advanced Thin Films and Applications
- Shenzhen University
- Shenzhen 518060
- People's Republic of China
| | - Hao Jin
- College of Physics and Energy
- Shenzhen Key Laboratory of Advanced Thin Films and Applications
- Shenzhen University
- Shenzhen 518060
- People's Republic of China
| | - Lin Yu
- School of Physics, State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- People's Republic of China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- People's Republic of China
| | - Dai Ying
- School of Physics, State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- People's Republic of China
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18
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Xie Z, Shi S, Liu F, Smith DL, Ruden PP, Frisbie CD. Large Magnetoresistance at Room Temperature in Organic Molecular Tunnel Junctions with Nonmagnetic Electrodes. ACS NANO 2016. [PMID: 27598057 DOI: 10.1103/physrevb.95.155315] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
We report room-temperature resistance changes of up to 30% under weak magnetic fields (0.1 T) for molecular tunnel junctions composed of oligophenylene thiol molecules, 1-2 nm in length, sandwiched between gold contacts. The magnetoresistance (MR) is independent of field orientation and the length of the molecule; it appears to be an interface effect. Theoretical analysis suggests that the source of the MR is a two-carrier (two-hole) interaction at the interface, resulting in spin coupling between the tunneling hole and a localized hole at the Au/molecule contact. Such coupling leads to significantly different singlet and triplet transmission barriers at the interface. Even weak magnetic fields impede spin relaxation processes and thus modify the ratio of holes tunneling via the singlet state versus the triplet state, which leads to the large MR. Overall, the experiments and analysis suggest significant opportunities to explore large MR effects in molecular tunnel junctions based on widely available molecules.
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Affiliation(s)
- Zuoti Xie
- Department of Chemical Engineering and Materials Science and ‡Department of Electrical and Computer Engineering, University of Minnesota , Minneapolis, Minnesota 55455, United States
| | - Sha Shi
- Department of Chemical Engineering and Materials Science and ‡Department of Electrical and Computer Engineering, University of Minnesota , Minneapolis, Minnesota 55455, United States
| | - Feilong Liu
- Department of Chemical Engineering and Materials Science and ‡Department of Electrical and Computer Engineering, University of Minnesota , Minneapolis, Minnesota 55455, United States
| | - Darryl L Smith
- Department of Chemical Engineering and Materials Science and ‡Department of Electrical and Computer Engineering, University of Minnesota , Minneapolis, Minnesota 55455, United States
| | - P Paul Ruden
- Department of Chemical Engineering and Materials Science and ‡Department of Electrical and Computer Engineering, University of Minnesota , Minneapolis, Minnesota 55455, United States
| | - C Daniel Frisbie
- Department of Chemical Engineering and Materials Science and ‡Department of Electrical and Computer Engineering, University of Minnesota , Minneapolis, Minnesota 55455, United States
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