Structure and Growth of Hexagonal Boron Nitride on Ir(111)

Selective Formation of Homochiral Dimers by Intermolecular Charge Transfer on a hBN Nanomesh

In this study, a comprehensive characterization was conducted on a chiral starburst molecule (C57H48N4, SBM) using scanning tunneling microscopy. When adsorbed onto the hBN/Rh(111) nanomesh, these molecules demonstrate homochiral recognition, leading to a selective formation of homochiral dimers. Further tip manipulation experiments reveal that the chiral dimers are stable and primarily controlled by strong intermolecular interactions. Density functional theory (DFT) calculations supported that the chiral recognition of SBM molecules is governed by the intermolecular charge transfer mechanism, different from the common steric hindrance effect. This study emphasizes the importance of intermolecular charge transfer interactions, offering valuable insights into the chiral recognition of a simple bimolecular system. These findings hold significance for the future advancement in chirality-based electronic sensors and pharmaceuticals, where the chirality of molecules can impact their properties.

Stripe-Like hBN Monolayer Template for Self-Assembly and Alignment of Pentacene Molecules

Metallic surfaces with unidirectional anisotropy are often used to guide the self-assembly of organic molecules along a particular direction. Such supports thus offer an avenue for the fabrication of hybrid organic-metal interfaces with tailored morphology and precise elemental composition. Nonetheless, such control often comes at the expense of detrimental interfacial interactions that might quench the pristine properties of molecules. Here, hexagonal boron nitride grown on Ir(100) is introduced as a robust platform with several coexisting 1D stripe-like moiré superstructures that effectively guide unidirectional self-assemblies of pentacene molecules, concomitantly preserving their pristine electronic properties. In particular, highly-aligned longitudinal arrays of equally-oriented molecules are formed along two perpendicular directions, as demonstrated by comprehensive scanning tunneling microscopy and photoemission characterization performed at the local and non-local scale, respectively. The functionality of the template is demonstrated by photoemission tomography, a surface-averaging technique requiring a high degree of orientational order of the probed molecules. The successful identification of pentacene's pristine frontier orbitals underlines that the template induces excellent long-range molecular ordering via weak interactions, preventing charge transfer.

Unidirectional Nano-modulated Binding and Electron Scattering in Epitaxial Borophene

A complex interplay between the crystal structure and the electron behavior within borophene renders this material an intriguing 2D system, with many of its electronic properties still undiscovered. Experimental insight into those properties is additionally hampered by the limited capabilities of the established synthesis methods, which, in turn, inhibits the realization of potential borophene applications. In this multimethod study, photoemission spectroscopies and scanning probe techniques complemented by theoretical calculations have been used to investigate the electronic characteristics of a high-coverage, single-layer borophene on the Ir(111) substrate. Our results show that the binding of borophene to Ir(111) exhibits pronounced one-dimensional modulation and transforms borophene into a nanograting. The scattering of photoelectrons from this structural grating gives rise to the replication of the electronic bands. In addition, the binding modulation is reflected in the chemical reactivity of borophene and gives rise to its inhomogeneous aging effect. Such aging is easily reset by dissolving boron atoms in iridium at high temperature, followed by their reassembly into a fresh atomically thin borophene mesh. Besides proving electron-grating capabilities of the boron monolayer, our data provide comprehensive insight into the electronic properties of epitaxial borophene which is vital for further examination of other boron systems of reduced dimensionality.

Interplay of Kinetic Limitations and Disintegration: Selective Growth of Hexagonal Boron Nitride and Borophene Monolayers on Metal Substrates

The CVD growth of bielemental 2D-materials by using molecular precursors involves complex formation kinetics taking place at the surface and sometimes also subsurface regions of the substrate. Competing microscopic processes fundamentally limit the parameter space for optimal growth of the desired material. Kinetic limitations for diffusion and nucleation cause a high density of small domains and grain boundaries. These are usually overcome by increasing the growth temperature and decreasing the growth rate. In contrast, the nature of molecular precursors with limited thermal stability can result in dissociation and preferential desorption, leading to an undesired or ill-defined composition of the 2D-material. Here we demonstrate these constraints in a combined low-energy electron diffraction and low-energy electron microscopy study by examining the selective formation of single-layer hexagonal boron nitride (hBN) and borophene on Ir(111) using a borazine precursor. We derive a temperature-pressure phase diagram and apply classical nucleation theory to describe our results. By considering the competing processes, we find an optimum growth temperature for hBN of 950 °C. At lower temperatures, the hBN island density is increased, while at higher temperatures the precursor disintegrates and borophene is formed. Our results introduce an additional aspect that must be considered in any high-temperature growth of bielemental 2D-materials from single molecular precursors.

Functional hBN decorated Ni(OH)2 nanosheets synthesized for remarkable adsorption performance for the elimination of fluoride ions

Occurrence of fluoride in groundwater is a serious concern due to its fatal effects. Functionalized hexagonal boron nitride sheets have been combined with nickel hydroxide nanoparticles by a one step process and a hybrid adsorbent Ni(OH)2@hBN has been developed with an exceptionally high fluoride adsorption capacity of 365 mg g-1, higher than those of Ni(OH)2 and hBN. This maximum adsorption capacity is higher than those of most common adsorbents used for defluoridation including activated alumina, reported nickel oxide and carbon-based 2D material-supported alumina adsorbents. The presence of functionalized boron nitride significantly increased the surface area to 680 m2 g-1 with a pore volume of 0.33687 cm3 g-1 and provided rich hydroxyl group-containing surface sites for the removal of fluoride present in contaminated water. In addition, the adsorption of fluoride onto boron nitride-modified nickel hydroxide followed pseudo-second-order kinetics and the equilibrium data fitted well with the Langmuir adsorption isotherm, suggesting a monolayer adsorption mechanism. Furthermore, the material developed is tested with the water sample collected from a real affected area, from the Dhar district of India, and the material showed promising results in terms of fluoride removal efficacy.

Growth mechanisms of monolayer hexagonal boron nitride (h-BN) on metal surfaces: theoretical perspectives

Two-dimensional hexagonal boron nitride (h-BN) has appeared as a promising material in diverse areas of applications, including as an excellent substrate for graphene devices, deep-ultraviolet emitters, and tunneling barriers, thanks to its outstanding stability, flat surface, and wide-bandgap. However, for achieving such exciting applications, controllable mass synthesis of high-quality and large-scale h-BN is a precondition. The synthesis of h-BN on metal surfaces using chemical vapor deposition (CVD) has been extensively studied, aiming to obtain large-scale and high-quality materials. The atomic-scale growth process, which is a prerequisite for rationally optimizing growth circumstances, is a key topic in these investigations. Although theoretical investigations on h-BN growth mechanisms are expected to reveal numerous new insights and understandings, different growth methods have completely dissimilar mechanisms, making theoretical research extremely challenging. In this article, we have summarized the recent cutting-edge theoretical research on the growth mechanisms of h-BN on different metal substrates. On the frequently utilized Cu substrate, h-BN development was shown to be more challenging than a simple adsorption-dehydrogenation-growth scenario. Controlling the number of surface layers is also an important challenge. Growth on the Ni surface is controlled by precipitation. An unusual reaction-limited aggregation growth behavior has been seen on interfaces having a significant lattice mismatch to h-BN. With intensive theoretical investigations employing advanced simulation approaches, further progress in understanding h-BN growth processes is predicted, paving the way for guided growth protocol design.

A van der Waals Heterostructure with an Electronically Textured Moiré Pattern: PtSe2/PtTe2

The interlayer interaction in Pt-dichalcogenides strongly affects their electronic structures. The modulations of the interlayer atom-coordination in vertical heterostructures based on these materials are expected to laterally modify these interlayer interactions and thus provide an opportunity to texture the electronic structure. To determine the effects of local variation of the interlayer atom coordination on the electronic structure of PtSe₂, van der Waals heterostructures of PtSe₂ and PtTe₂ have been synthesized by molecular beam epitaxy. The heterostructure forms a coincidence lattice with 13 unit cells of PtSe₂ matching 12 unit cells of PtTe₂, forming a moiré superstructure. The interaction with PtTe₂ reduces the band gap of PtSe₂ monolayers from 1.8 eV to 0.5 eV. While the band gap is uniform across the moiré unit cell, scanning tunneling spectroscopy and dI/dV mapping identify gap states that are localized within certain regions of the moiré unit cell. Deep states associated with chalcogen p_z-orbitals at binding energies of ∼ -2 eV also exhibit lateral variation within the moiré unit cell, indicative of varying interlayer chalcogen interactions. Density functional theory calculations indicate that local variations in atom coordination in the moiré unit cell cause variations in the charge transfer from PtTe₂ to PtSe₂, thus affecting the value of the interface dipole. Experimentally this is confirmed by measuring the local work function by field emission resonance spectroscopy, which reveals a large work function modulation of ∼0.5 eV within the moiré structure. These results show that the local coordination variation of the chalcogen atoms in the PtSe₂/PtTe₂ van der Waals heterostructure induces a nanoscale electronic structure texture in PtSe₂.

The interface ofin-situgrown single-layer epitaxial MoS2on SrTiO3(001) and (111)

SrTiO₃(STO) is a versatile substrate with a high dielectric constant, which may be used in heterostructures with 2D materials, such as MoS₂, to induce interesting changes to the electronic structure. STO single crystal substrates have previously been shown to support the growth of well-defined epitaxial single-layer (SL) MoS₂crystals. The STO substrate is already known to renormalize the electronic bandgap of SL MoS₂, but the electronic nature of the interface and its dependence on epitaxy are still unclear. Herein, we have investigated anin-situphysical vapor deposition (PVD) method, which could eliminate the need for ambient transfer between substrate preparation, subsequent MoS₂growth and surface characterization. Based on this, we then investigate the structure and epitaxial alignment of pristine SL MoS₂in various surface coverages grown on two STO substrates with a different initial surface lattice, the STO(001)(4 × 2) and STO(111)-(9/5 × 9/5) reconstructed surfaces, respectively. Scanning tunneling microscopy shows that epitaxial alignment of the SL MoS₂is present for both systems, reflected by orientation of MoS₂edges and a distinct moiré pattern visible on the MoS₂(0001) basal place. Upon increasing the SL MoS₂coverage, the presence of four distinct rotational domains on the STO(001) substrate, whilst only two on STO(111), is seen to control the possibilities for the formation of coherent MoS₂domains with the same orientation. The presented methodology relies on standard PVD in ultra-high vacuum and it may be extended to other systems to help explore pristine two-dimensional transition metal dichalcogenide/STO systems in general.

A Review of Scalable Hexagonal Boron Nitride (h-BN) Synthesis for Present and Future Applications

Hexagonal boron nitride (h-BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely used for thermal management, heat shielding, lubrication, and as a filler material for structural composites. Recent scientific advances in isolating atomically thin monolayers from layered van der Waals crystals to study their unique properties has propelled research interest in mono/few layered h-BN as a wide bandgap insulating support for nanoscale electronics, tunnel barriers, communications, neutron detectors, optics, sensing, novel separations, quantum emission from defects, among others. Realizing these futuristic applications hinges on scalable cost-effective high-quality h-BN synthesis. Here, the authors review scalable approaches of high-quality mono/multilayer h-BN synthesis, discuss the challenges and opportunities for each method, and contextualize their relevance to emerging applications. Maintaining a stoichiometric balance B:N = 1 as the atoms incorporate into the growing layered crystal and maintaining stacking order between layers during multi-layer synthesis emerge as some of the main challenges for h-BN synthesis and the development of processes to address these aspects can inform and guide the synthesis of other layered materials with more than one constituent element. Finally, the authors contextualize h-BN synthesis efforts along with quality requirements for emerging applications via a technological roadmap.

Corrosion Resistance of Ultrathin Two-Dimensional Coatings: First-Principles Calculations towards In-Depth Mechanism Understanding and Precise Material Design

In recent years, ultrathin two-dimensional (2D) coatings, e.g., graphene (Gr) and hexagonal boron nitride (h-BN), are intriguing research foci in the field of anticorrosion because their high air stability, excellent impermeability, high optical transparency, and atomistic thickness have endowed them with attractive anticorrosion applications. The microstructure of 2D coatings, coating–substrate interactions, and properties of 2D coatings on substrates in a variety of environmental conditions (e.g., at different temperatures, stresses, and pH values) are the key factors governing the anticorrosion performance of 2D coatings and are among the central topics for all 2D-coating studies. For many conventional experimental measurements (e.g., microscopy and electrochemical methods), there exist challenges to acquire detailed information on the atomistic mechanisms for the involved subnanometer scale corrosion problems. Alternatively, as a precise and efficient quantum-mechanical simulation approach, the first-principles calculation based on density-functional theory (DFT) has become a powerful way to study the thermodynamic and kinetic properties of materials on the atomic scale, as well as to clearly reveal the underlying microscopic mechanisms. In this review, we introduce the anticorrosion performance, existing problems, and optimization ways of Gr and h-BN coatings and summarize important recent DFT results on the critical and complex roles of coating defects and coating–substrate interfaces in governing their corrosion resistance. These DFT progresses have shed much light on the optimization ways towards better anticorrosion 2D coatings and also guided us to make a prospect on the further development directions and promising design schemes for superior anticorrosion ultrathin 2D coatings in the future.

Borophenes made easy

To date, the scalable synthesis of elemental two-dimensional materials beyond graphene still remains elusive. Here, we introduce a versatile chemical vapor deposition (CVD) method to grow borophenes, as well as borophene heterostructures, by selectively using diborane originating from traceable byproducts of borazine. Specifically, metallic borophene polymorphs were successfully synthesized on Ir(111) and Cu(111) single-crystal substrates and conjointly with insulating hexagonal boron nitride (hBN) to form atomically precise lateral borophene-hBN interfaces or vertical van der Waals heterostructures. Thereby, borophene is protected from immediate oxidation by a single hBN overlayer. The ability to synthesize high-quality borophenes with large single-crystalline domains in the micrometer scale by a straight-forward CVD approach opens up opportunities for the study of their fundamental properties and for device incorporation.

Broad background in electron diffraction of 2D materials as a signature of their superior quality

An unusually broad bell-shaped component (BSC) has been previously observed in surface electron diffraction on different types of 2D systems. It was suggested to be an indicator of uniformity of epitaxial graphene (Gr) and hexagonal boron nitride (hBN). In the current study we use low-energy electron microscopy and micro-diffraction to directly relate the BSC to the crystal quality of the diffracting 2D material. Specially designed lateral heterostructures were used to map the spatial evolution of the diffraction profile across different 2D materials, namely pure hBN, BCN alloy and pure Gr, where the alloy region exhibits deteriorated structural coherency. The presented results show that the BSC intensity has a minimum in the alloyed region, consequently showing that BSC is sensitive to the lateral domain size and homogeneity of the material under examination. This is further confirmed by the presence of a larger number of sharp moiré spots when the BSC is most pronounced in the pure hBN and Gr regions. Consequently, it is proposed that the BSC can be used as a diagnostic tool for determining the quality of the 2D materials.

Selective Oxygen and Hydrogen Functionalization of the h-BN/Rh(111) Nanomesh

We present detailed studies on the covalent adsorption of molecular oxygen and atomic hydrogen on the hexagonal boron nitride (h-BN) nanomesh on Rh(111). The functionalization of this two-dimensional (2D) material was investigated under ultra-high vacuum conditions using synchrotron radiation-based in situ high-resolution X-ray photoelectron spectroscopy, temperature-programmed X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. We are able to provide a deep insight into the adsorption behavior and thermal stability of oxygen and hydrogen on h-BN/Rh(111). Oxygen functionalization was achieved via a supersonic molecular beam while hydrogen functionalization was realized using an atomic hydrogen source. Adsorption of the respective species was observed to occur selectively in the pores of h-BN leading to spatially defined modification of the 2D layer. The adsorption of the observed molecular oxygen species was found to be an activated process that requires high-energy oxygen molecules. Upon heating to 700 K, oxygen functionalization was observed to be almost reversible except for small amounts of boron oxides evolving due to the reaction of oxygen with the 2D material. Hydrogen functionalization of h-BN/Rh(111) was fully reversed upon heating to about 640 K.

Two Phases of Monolayer Tantalum Sulfide on Au(111)

We prepared monolayers of tantalum sulfide on Au(111) by evaporation of Ta in a reactive background of H₂S. Under sulfur-rich conditions, monolayers of 2H-TaS₂ formed, whereas under sulfur-poor conditions TaS_2-x with 0 ≤ x ≤ 1 were found. We identified this phase as TaS, a structure that can be derived from 2H-TaS₂ by removal of the bottom S layer.

Segregation-Enhanced Epitaxy of Borophene on Ir(111) by Thermal Decomposition of Borazine

Like other 2D materials, the boron-based borophene exhibits interesting structural and electronic properties. While borophene is typically prepared by molecular beam epitaxy, we report here on an alternative way of synthesizing large single-phase borophene domains by segregation-enhanced epitaxy. X-ray photoelectron spectroscopy shows that borazine dosing at 1100 °C onto Ir(111) yields a boron-rich surface without traces of nitrogen. At high temperatures, the borazine thermally decomposes, nitrogen desorbs, and boron diffuses into the substrate. Using time-of-flight secondary ion mass spectrometry, we show that during cooldown the subsurface boron segregates back to the surface where it forms borophene. In this case, electron diffraction reveals a (6 × 2) reconstructed borophene χ₆-polymorph, and scanning tunneling spectroscopy suggests a Dirac-like behavior. Studying the kinetics of borophene formation in low energy electron microscopy shows that surface steps are bunched during the borophene formation, resulting in elongated and extended borophene domains with exceptional structural order.

Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

Atomically thin hexagonal boron nitride (h-BN) is an emerging star of 2D materials. It is taken as an optimal substrate for other 2D-material-based devices owing to its atomical flatness, absence of dangling bonds, and excellent stability. Specifically, h-BN is found to be a natural hyperbolic material in the mid-infrared range, as well as a piezoelectric material. All the unique properties are beneficial for novel applications in optoelectronics and electronics. Currently, most of these applications are merely based on exfoliated h-BN flakes at their proof-of-concept stages. Chemical vapor deposition (CVD) is considered as the most promising approach for producing large-scale, high-quality, atomically thin h-BN films and heterostructures. Herein, CVD synthesis of atomically thin h-BN is the focus. Also, the growth kinetics are systematically investigated to point out general strategies for controllable and scalable preparation of single-crystal h-BN film. Meanwhile, epitaxial growth of 2D materials onto h-BN and at its edge to construct heterostructures is summarized, emphasizing that the specific orientation of constituent parts in heterostructures can introduce novel properties. Finally, recent applications of atomically thin h-BN and its heterostructures in optoelectronics and electronics are summarized.

High-Quality Hexagonal Boron Nitride from 2D Distillation

The production of high-quality two-dimensional (2D) materials is essential for the ultimate performance of single layers and their hybrids. Hexagonal boron nitride (h-BN) is foreseen to become the key 2D hybrid and packaging material since it is insulating, impermeable, flat, transparent, and chemically inert, though it is difficult to attain in ultimate quality. Here, a scheme is reported for producing single layer h-BN that shows higher quality in view of mosaicity and strain variations than material from chemical vapor deposition (CVD). We delaminate CVD h-BN from Rh(111) and transfer it to a clean metal surface. The twisting angle between BN and the second substrate yields metastable moiré structures. Annealing above 1000 K leads to 2D distillation, i.e., catalyst-assisted BN sublimation from the edges of the transferred layer and subsequent condensation into superior quality h-BN. This provides a way for 2D material production remote from CVD instrumentation.

Turn of the decade: versatility of 2D hexagonal boron nitride

The era of two-dimensional (2D) materials, in its current form, truly began at the time that graphene was first isolated just over 15 years ago. Shortly thereafter, the use of 2D hexagonal boron nitride (h-BN) had expanded in popularity, with use of the thin isolator permeating a significant number of fields in condensed matter and beyond. Due to the impractical nature of cataloguing every use or research pursuit, this review will cover ground in the following three subtopics relevant to this versatile material: growth, electrical measurements, and applications in optics and photonics. Through understanding how the material has been utilized, one may anticipate some of the exciting directions made possible by the research conducted up through the turn of this decade.

C60 self-orientation on hexagonal boron nitride induced by intermolecular coupling

A deep grasp of the properties of the interface between organic molecules and hexagonal boron nitride (h-BN) is essential for the full implementation of these two building blocks in the next generation of electronic devices. Here, using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS), we report on the geometric and electronic features of C60 evaporated on a single layer of h-BN grown on a Rh(110) surface under ultra-high vacuum. Two different molecular assemblies of C60 on the h-BN/Rh(110) surface were observed. The first STM study at room temperature (RT) and at low temperatures (40 K) looked at the molecular orientation of C60 on a two-dimensional layered material. Intramolecular-resolution images demonstrate the existence of a phase transition of C60 over the h-BN/Rh(110) surface similar to that found on bulk solid C60. At RT molecules exhibit random orientations, while at 40 K such rotational disorder vanishes and they adopt a common orientation over the h-BN/Rh(110) surface. The decrease in thermal energy allows recognition between C60 molecules, and they become equally oriented in the configuration at which the van der Waals intermolecular interactions are optimized. Bias-dependent submolecular features obtained by means of high-resolution STM images are interpreted as the highest occupied and lowest unoccupied molecular orbitals. STS data showed that fullerenes are electronically decoupled from the substrate, with a negligible charge transfer effect if any. Finally, the very early stages of multilayer growth were also investigated.

Vacancy-Assisted Growth Mechanism of Multilayer Hexagonal Boron Nitride on a Fe2B Substrate

The controllable synthesis of large-area and uniform hexagonal boron nitride (h-BN) films has been recently achieved on metal-boron alloy catalysts with the use of N₂ feedstock, representing important progress in an economic and environmentally friendly process. However, the systematic investigation of the growth mechanism is still lacking, which impedes the further development of this method. In this work, on the basis of density functional theory (DFT) calculations and experiments, we reveal the vacancy-assisted growth mechanism of h-BN on Fe₂B substrate. It is found that B vacancies created by the formation of BN dimers play important roles in the migration of B and N atoms near the catalyst surface. The diffusions of B and N atoms in the Fe₂B substrate need to overcome energy barriers of only less than 1.5 eV, which enables abundant dissolution of N atoms near the catalytic surface. Moreover, we found the critical barrier for h-BN growth is in the nucleation stage, which is ∼2 eV. These advantages enable the synthesis of h-BN at a low temperature of 700 K in our experiments. This vacancy-assisted growth of h-BN films on Fe₂B substrates is beneficial to the wafer-scale fabrication of multilayer materials, paving the way to potential applications in two-dimensional electronic and optoelectronic devices.

Binding and electronic level alignment of π-conjugated systems on metals

We review the binding and energy level alignment of π-conjugated systems on metals, a field which during the last two decades has seen tremendous progress both in terms of experimental characterization as well as in the depth of theoretical understanding. Precise measurements of vertical adsorption distances and the electronic structure together with ab initio calculations have shown that most of the molecular systems have to be considered as intermediate cases between weak physisorption and strong chemisorption. In this regime, the subtle interplay of different effects such as covalent bonding, charge transfer, electrostatic and van der Waals interactions yields a complex situation with different adsorption mechanisms. In order to establish a better understanding of the binding and the electronic level alignment of π-conjugated molecules on metals, we provide an up-to-date overview of the literature, explain the fundamental concepts as well as the experimental techniques and discuss typical case studies. Thereby, we relate the geometric with the electronic structure in a consistent picture and cover the entire range from weak to strong coupling.

Growth Kinetics of Two-Dimensional Hexagonal Boron Nitride Layers on Pd(111)

Using in situ variable-temperature scanning tunneling microscopy (300-673 K) during chemical vapor deposition of two-dimensional hexagonal boron nitride (hBN) on Pd(111) from borazine precursor at pressures up to 10^-6 mbar, we identify the mechanisms leading to carpetlike uphill or downhill growth across the Pd steps. Deposition at a higher rate and lower temperature promotes uphill growth via preferential attachment at the ascending and descending step-edges, whereas a lower deposition rate and higher temperature lead to downhill growth via nucleation and growth of islands on Pd terraces. We attribute this unusual growth behavior to differences in temperature-dependent rates of hBN deposition at the steps versus on the Pd terraces. Our results illustrate how growth mechanisms can be activated by a pair of parameters (substrate temperature and partial pressure of borazine) and provide new insights into the mechanisms underlying carpetlike growth of hBN and other layered materials.

Equilibrium shape of single-layer hexagonal boron nitride islands on iridium

Large, high-quality layers of hexagonal boron nitride (hBN) are a prerequisite for further advancement in scientific investigation and technological utilization of this exceptional 2D material. Here we address this demand by investigating chemical vapor deposition synthesis of hBN on an Ir(111) substrate, and focus on the substrate morphology, more specifically mono-atomic steps that are always present on all catalytic surfaces of practical use. From low-energy electron microscopy and atomic force microscopy data, we are able to set up an extended Wulff construction scheme and provide a clear elaboration of different interactions governing the equilibrium shapes of the growing hBN islands that deviate from the idealistic triangular form. Most importantly, intrinsic hBN edge energy and interaction with the iridium step edges are examined separately, revealing in such way the importance of substrate step morphology for the island structure and the overall quality of 2D materials.

Synthesis of sub-millimeter single-crystal grains of aligned hexagonal boron nitride on an epitaxial Ni film

Hexagonal boron nitride (h-BN), an insulating two-dimensional (2D) layered material, has attracted increasing interest due to its electrical screening effect, high-temperature-resistant gas barrier properties, and other unique applications. However, the presence of grain boundaries (GBs) in h-BN is a hindrance to obtain these properties. Here, we demonstrate the epitaxial growth of monolayer h-BN by chemical vapor deposition (CVD) on Ni(111) thin films deposited on c-plane sapphire. The Ni(111) films showed higher thermal stability than Cu(111) and Cu-Ni(111) alloy films, allowing us to perform CVD growth at a high temperature of 1100 °C. This resulted in an increase of the h-BN grain sizes to up to 0.5 millimeter, among the highest reported so far, and in a well-defined triangular grain shape. Low-energy electron microscopy (LEEM) revealed the epitaxial relationship between h-BN and the underlying Ni(111) lattice, leading to a preferential alignment of the h-BN grains. Both the large grain size and the alignment are expected to facilitate the synthesis of h-BN with a low density of GBs. We also found that the addition of N2 gas during the CVD improves the crystalline shape of the h-BN grains, changing from an irregular, truncated to a sharp triangle. The growth behavior of monolayer h-BN is further discussed in terms of the dependences on growth temperature and pressure, as well as on the structural evolution of the Ni metal catalyst. Our findings not only help understand the h-BN growth mechanism but also offer a new route to grow high-quality, monolayer h-BN films.

Suppression of wrinkle formation in graphene on Ir(111) by high-temperature, low-energy ion irradiation

Graphene on Ir(111) is irradiated with small fluences of 500 eV He ions at temperatures close to its chemical vapor deposition growth temperature. The ion irradiation experiments explore whether it is possible to suppress the formation of wrinkles in Gr during growth. It is found that the release of thermal mismatch strain by wrinkle formation can be entirely suppressed for an irradiation temperature of 880 °C. A model for the ion beam induced suppression of wrinkle formation in supported Gr is presented, and underpinned by experiments varying the irradiation temperature or involving intercalation subsequent to irradiation.

A Monolayer of Hexagonal Boron Nitride on Ir(111) as a Template for Cluster Superlattices

The moiré of a monolayer of hexagonal boron nitride on Ir(111) is found to be a template for Ir, C, and Au cluster superlattices. Using scanning tunneling microscopy, the cluster structure and epitaxial relation to the substrate, the cluster binding site, the role of defects, as well as the thermal stability of the cluster lattice are investigated. The Ir and C cluster superlattices display a high thermal stability, before they decay by intercalation and Smoluchowski ripening. Ab initio calculations explain the extraordinarily strong Ir cluster binding through selective sp³ rehybridization of boron nitride involving B-Ir cluster bonds and a strengthening of the nitrogen bonds to the Ir substrate in a specific, initially only chemisorbed valley area within the moiré.

Elemental Identification by Combining Atomic Force Microscopy and Kelvin Probe Force Microscopy

There are currently no experimental techniques that combine atomic-resolution imaging with elemental sensitivity and chemical fingerprinting on single molecules. The advent of using molecular-modified tips in noncontact atomic force microscopy (nc-AFM) has made it possible to image (planar) molecules with atomic resolution. However, the mechanisms responsible for elemental contrast with passivated tips are not fully understood. Here, we investigate elemental contrast by carrying out both nc-AFM and Kelvin probe force microscopy (KPFM) experiments on epitaxial monolayer hexagonal boron nitride (hBN) on Ir(111). The hBN overlayer is inert, and the in-plane bonds connecting nearest-neighbor boron and nitrogen atoms possess strong covalent character and a bond length of only ∼1.45 Å. Nevertheless, constant-height maps of both the frequency shift Δ f and the local contact potential difference exhibit striking sublattice asymmetry. We match the different atomic sites with the observed contrast by comparison with nc-AFM image simulations based on the density functional theory optimized hBN/Ir(111) geometry, which yields detailed information on the origin of the atomic-scale contrast.

Resolving the Chemically Discrete Structure of Synthetic Borophene Polymorphs

Atomically thin two-dimensional (2D) materials exhibit superlative properties dictated by their intralayer atomic structure, which is typically derived from a limited number of thermodynamically stable bulk layered crystals (e.g., graphene from graphite). The growth of entirely synthetic 2D crystals, those with no corresponding bulk allotrope, would circumvent this dependence upon bulk thermodynamics and substantially expand the phase space available for structure-property engineering of 2D materials. However, it remains unclear if synthetic 2D materials can exist as structurally and chemically distinct layers anchored by van der Waals (vdW) forces, as opposed to strongly bound adlayers. Here, we show that atomically thin sheets of boron (i.e., borophene) grown on the Ag(111) surface exhibit a vdW-like structure without a corresponding bulk allotrope. Using X-ray standing wave-excited X-ray photoelectron spectroscopy, the positions of boron in multiple chemical states are resolved with sub-angström spatial resolution, revealing that the borophene forms a single planar layer that is 2.4 Å above the unreconstructed Ag surface. Moreover, our results reveal that multiple borophene phases exhibit these characteristics, denoting a unique form of polymorphism consistent with recent predictions. This observation of synthetic borophene as chemically discrete from the growth substrate suggests that it is possible to engineer a much wider variety of 2D materials than those accessible through bulk layered crystal structures.

van der Waals Layered Materials: Opportunities and Challenges

Since graphene became available by a scotch tape technique, a vast class of two-dimensional (2D) van der Waals (vdW) layered materials has been researched intensively. What is more intriguing is that the well-known physics and chemistry of three-dimensional (3D) bulk materials are often irrelevant, revealing exotic phenomena in 2D vdW materials. By further constructing heterostructures of these materials in the planar and vertical directions, which can be easily achieved via simple exfoliation techniques, numerous quantum mechanical devices have been demonstrated for fundamental research and technological applications. It is, therefore, necessary to review the special features in 2D vdW materials and to discuss the remaining issues and challenges. Here, we review the vdW materials library, technology relevance, and specialties of vdW materials covering the vdW interaction, strong Coulomb interaction, layer dependence, dielectric screening engineering, work function modulation, phase engineering, heterostructures, stability, growth issues, and the remaining challenges.

Corrugation in the Weakly Interacting Hexagonal-BN/Cu(111) System: Structure Determination by Combining Noncontact Atomic Force Microscopy and X-ray Standing Waves

Atomically thin hexagonal boron nitride (h-BN) layers on metallic supports represent a promising platform for the selective adsorption of atoms, clusters, and molecular nanostructures. Specifically, scanning tunneling microscopy (STM) studies revealed an electronic corrugation of h-BN/Cu(111), guiding the self-assembly of molecules and their energy level alignment. A detailed characterization of the h-BN/Cu(111) interface including the spacing between the h-BN sheet and its support-elusive to STM measurements-is crucial to rationalize the interfacial interactions within these systems. To this end, we employ complementary techniques including high-resolution noncontact atomic force microscopy, STM, low-energy electron diffraction, X-ray photoelectron spectroscopy, the X-ray standing wave method, and density functional theory. Our multimethod study yields a comprehensive, quantitative structure determination including the adsorption height and the corrugation of the sp² bonded h-BN layer on Cu(111). Based on the atomic contrast in atomic force microscopy measurements, we derive a measurable-hitherto unrecognized-geometric corrugation of the h-BN monolayer. This experimental approach allows us to spatially resolve minute height variations in low-dimensional nanostructures, thus providing a benchmark for theoretical modeling. Regarding potential applications, e.g., as a template or catalytically active support, the recognition of h-BN on Cu(111) as a weakly bonded and moderately corrugated overlayer is highly relevant.

Two-dimensional honeycomb hafnene monolayer: stability and magnetism by structural transition

A few years ago, it was claimed that the two-dimensional ferromagnetic planar Hf monolayer could be synthesized on Ir(111). However, several questions remained unanswered. Herein, we unravel the structural stability of the HF monolayer and its influence on magnetism using first principles calculations. Despite the ferromagnetic state in the planar free-standing Hf layer, extensive systematic calculations with phonon spectra reveal that the planar free-standing Hf layer is unstable and it has a non-magnetic high-buckled structure in the ground state. We also find a structural transition from buckled to flat honeycomb geometry on the Ir(111) substrate. Nonetheless, 2D hafnene has no magnetic state due to strong hybridization with the Ir(111) surface. The evolution from the non-magnetic to the ferromagnetic state combined with structural transition is observed by adding BN as a spacer layer on the Ir(111) substrate (BN/Ir(111)). In addition, we find that 2D Hf on BN/Ir(111) has a giant perpendicular magnetic anisotropy of 3.41 meV.

Self-assembly of ordered graphene nanodot arrays

The ability to fabricate nanoscale domains of uniform size in two-dimensional materials could potentially enable new applications in nanoelectronics and the development of innovative metamaterials. However, achieving even minimal control over the growth of two-dimensional lateral heterostructures at such extreme dimensions has proven exceptionally challenging. Here we show the spontaneous formation of ordered arrays of graphene nano-domains (dots), epitaxially embedded in a two-dimensional boron–carbon–nitrogen alloy. These dots exhibit a strikingly uniform size of 1.6 ± 0.2 nm and strong ordering, and the array periodicity can be tuned by adjusting the growth conditions. We explain this behaviour with a model incorporating dot-boundary energy, a moiré-modulated substrate interaction and a long-range repulsion between dots. This new two-dimensional material, which theory predicts to be an ordered composite of uniform-size semiconducting graphene quantum dots laterally integrated within a larger-bandgap matrix, holds promise for novel electronic and optoelectronic properties, with a variety of potential device applications.

The nanoscale patterning of two-dimensional materials offers the possibility of novel optoelectronic properties; however, it remains challenging. Here, Camilli et al. show the self-assembly of large arrays of highly-uniform graphene dots imbedded in a BCN matrix, enabling novel devices.

Preferential Alignment of Incommensurate Block Copolymer Dot Arrays Forming Moiré Superstructures

Block copolymer (BCP) self-assembly is of great interest as a cost-effective method for large-scale, high-resolution nanopattern fabrication. Directed self-assembly can induce long-range order and registration, reduce defect density, and enable access to patterns of higher complexity. Here we demonstrate preferential orientation of two incommensurate BCP dot arrays. A bottom layer of hexagonal silica dots is prepared via typical self-assembly from a PS-b-PDMS block copolymer. Self-assembly of a second, or top, layer of a different PS-b-PDMS block copolymer that forms a hexagonal dot pattern with different periodicity results in a predictable moiré superstructure. Four distinct moiré superstructures were demonstrated through a combination of different BCPs and different order of annealing. The registration force of the bottom layer of hexagonal dots is sufficient to direct the self-assembly of the top layer to adopt a preferred relative angle of rotation. Large-area helium ion microscopy imaging enabled quantification of the distributions of relative rotations between the two lattices in the moiré superstructures, yielding statistically meaningful results for each combination. It was also found that if the bottom layer dots were too large, the resulting moiré pattern was lost. A small reduction in the bottom layer dot size, however, resulted in large-area moiré superstructures, suggesting a specific size regime where interlayer registration forces can induce long-range preferential alignment of incommensurate BCP dot arrays.