Constructing Fast Carrier Tracks into Flexible Perovskite Photodetectors To Greatly Improve Responsivity

Computational Insight into the Physical Properties of Bulk MP (M = Li, Na, K) for Energy Applications

In this study, we applied density functional theory to compute the electronic, optical, and thermal properties of MP (M = Li, Na, K). We find that the materials under consideration are stable, owing to the lack of negative frequencies in the phonon spectra. LiP exhibits an indirect band gap of 1.43 eV. NaP and KP have direct band gaps of 1.67 and 1.76 eV, respectively. The family of these composites shows strong absorption, observed by their very sharp absorption edges and confirmed by their direct transition from the valence to conduction band. They exhibit strong absorption below 4.0 eV in the optical spectra, which could serve in a solar cell device. The thermal calculations show high zT values of 0.74, 0.78, and 0.64 at 300 K for LiP, NaP, and KP, respectively. Thus, our results could be promising for electronic and thermal devices.

Ultrastable Photodetectors Based on Blue CsPbBr3 Perovskite Nanoplatelets via a Surface Engineering Strategy

Recently, photodetectors based on perovskite nanoplatelets (NPLs) have attracted considerable attention in the visible spectral region owing to their large absorption cross-section, high exciton binding energy, excellent charge transfer properties, and appropriate flexibility. However, their stability and performance are still challenging for perovskite NPL photodetectors. Here, a surface engineering strategy to enhance the optical stability of blue-light CsPbBr3 NPLs by acetylenedicarboxylic acid (ATDA) treatment has been developed. ATDA has strong binding capacity and a short chain length, which can effectively passivate defects and significantly improve the photoluminescence quantum efficiency, stability, and carrier mobility of NPLs. As a result, ATDA-treated CsPbBr3 NPLs exhibit improved optical properties in both solutions and films. The NPL solution maintains high PL performance even after being heated at 80 °C for 2 h, and the NPL film remains nondegradable after 4 h of exposure to ultraviolet irradiation. Especially, photodetectors based on the treated CsPbBr3 NPL films demonstrate exceptional performance, especially when the detectivity approaches up to 9.36 × 1012 Jones, which can be comparable to the best CsPbBr3 NPL photodetectors ever reported. More importantly, the assembled devices demonstrated high stability (stored in an air environment for more than 30 days), significantly exceeding that of untreated NPLs.

Chemical and Structural Stability of CsPbX3 Nanorods during Postsynthetic Anion-Exchange: Implications for Optoelectronic Functionality

We examine halide anion-exchange reactions on CsPbX3 nanorods (NRs), and we identify reaction conditions that provide complete anion exchange while retaining both the highly quantum-confined 1-D morphology and metastable crystal lattice configurations that span a range between tetragonal structures and thermodynamically preferred orthorhombic structures. We find that the chemical stability of CsPbBr3 NRs is degraded by the presence of alkyl amines that etch CsPbBr3 and result in the formation of Cs4PbBr6 and 2-D bromoplumbates. Our study outlines strategies for maintaining metastable states of the soft lattices of perovskite nanocrystals undergoing exchange reactions, despite the thermodynamic driving force toward more stable lattice configurations during this disruptive chemical transformation. These strategies can be used to fine-tune the band gap of LHP-based nanostructures while preserving structure-property relationships that are contingent on metastable shapes and crystal configurations, aiding optoelectronic applications of these materials.

Highly stable, substrate-free, and flexible broadband halide perovskite paper photodetectors

In this work, we aim to fabricate a highly stable and flexible perovskite paper photodetector based on a Zn-doped MA_0.6FA_0.4PbI₃ perovskite and CNC. The paper photodetector has been successfully synthesized by the vacuum filtration method and deposited with interdigitated electrodes. The paper photodetector exhibits a significant photoresponse with a responsivity of 0.23 A W^-1 under 650 nm light irradiation when operated at 5 V. The stability of the paper photodetector has also been tested and it shows high photoresponse after 30 days under ambient conditions. Therefore, this paper photodetector holds promise for developing efficient, stable, and flexible optoelectronic devices in the future.

Interfacial engineering of halide perovskites and two-dimensional materials

Recently, halide perovskites (HPs) and layered two-dimensional (2D) materials have received significant attention from industry and academia alike. HPs are emerging materials that have exciting photoelectric properties, such as a high absorption coefficient, rapid carrier mobility and high photoluminescence quantum yields, making them excellent candidates for various optoelectronic applications. 2D materials possess confined carrier mobility in 2D planes and are widely employed in nanostructures to achieve interfacial modification. HP/2D material interfaces could potentially reveal unprecedented interfacial properties, including light absorbance with desired spectral overlap, tunable carrier dynamics and modified stability, which may lead to several practical applications. In this review, we attempt to provide a comprehensive perspective on the development of interfacial engineering of HP/2D material interfaces. Specifically, we highlight the recent progress in HP/2D material interfaces considering their architectures, electronic energetics tuning and interfacial properties, discuss the potential applications of these interfaces and analyze the challenges and future research directions of interfacial engineering of HP/2D material interfaces. This review links the fields of HPs and 2D materials through interfacial engineering to provide insights into future innovations and their great potential applications in optoelectronic devices.

Carbonized polymer dots enhanced stability and flexibility of quasi-2D perovskite photodetector

Quasi-2D perovskites have been demonstrated to be competitive materials in the photodetection fields due to the enhanced moisture stability by large organic cations. However, as the increasing demands of modern technology, it is still challenging to combine the flexibility with the capability of weak light detection in a low-cost way. Here, amides, carboxylic acids, and anhydrides groups-rich carbonized polymer dots (CPDs) were employed to fill in the perovskite grain boundaries, which can passivate the point defects of perovskite by coordinating with the unbonded Pb atoms, and reduce the leakage current. Weak light detection capability was demonstrated by directly resolving light with an intensity of 10.1 pW cm^-2. More importantly, the stretchable polymer chains on CPDs strongly interact with perovskite ions through multiple supramolecular interactions, and extend the stretchable properties to the perovskite/CPDs composites, which can maintain the integral structure stability during the deformation of perovskite crystals and restricted any crack by releasing the film strain. Our fabricated devices show extraordinary flexible stability in the bending-dependent response tests. The viscoelasticity of CPDs improves the bending stability of the flexible quasi-2D perovskite photodetectors, and device performance shows no degradation after bending 10000 times, comparable or even outperforming the dominating flexible photodetectors.

Exciton dynamics and photoresponse behavior of thein situannealed CsSnBr3perovskite films synthesized by thermal evaporation

The CsSnBr₃photodetectors are fabricated by thermal evaporation and 75 °Cin situannealing, and the effect ofin situannealing on the morphology, structure, exciton dynamics and photoresponse of thermally evaporated CsSnBr₃films are investigated. Especially, temperature dependent steady-state photoluminescence (PL) and transient PL decaying have been analyzed in details for understanding the exciton dynamics. Meanwhile, effect of annealing on the activation energy for trap sites (E_a), exciton binding energy (E_b), activation energy for interfacial trapped carriers (ΔE), trap densities and carriers mobilities are studied and the annealed (A-CsSnBr₃) reveals obviously lowerE_band trap density together with notably higher carrier mobility than those of the unannealed (UA-CsSnBr₃). Temperature dependence of the integrated PL intensity can be ascribed to the combining effect of the exciton dissociation, exciton quenching through trap sites and thermal activation of trapped carriers. The temperature dependent transient PL decaying analysis indicates that the PL decaying mechanism at low and high temperature is totally different from that in intermediate temperature range, in which combing effect of free exciton and localized state exciton decaying prevail. The beneficial effects of thein situannealing on the photoresponse performance of the CsSnBr₃films can be demonstrated by the remarkable enhancement of the optimal responsivity (R) afterin situannealing which increases from less than 1 A W^-1to 1350 A W^-1as well as dramatically improved noise equivalent power, specific detectivityD* and Gain (G).

Luminescent Thin Films Enabled by CsPbX3 (X=Cl, Br, I) Precursor Solution

Inorganic cesium lead halide perovskite nanocrystals are candidates for lighting and display materials due to their outstanding optoelectronic properties. However, the dissolution issue of perovskite nanocrystals in polar solvents remains a challenge for practical applications. Herein, we present a newly designed one-step spin-coating strategy to prepare a novel multicolor-tunable CsPbX₃ (X=Cl, Br, I) nanocrystal film, where the CsPbX₃ precursor solution was formed by dissolving PbO, Cs₂ CO₃ , and CH₃ NH₃ X into the ionic liquid n-butylammonium butyrate. The as-designed CsPbX₃ nanocrystal films show high color purity with a narrow emission width. Also, the blue CsPb(Cl/Br)₃ film demonstrates an absolute photoluminescence quantum yields (PLQY) of 15.6 %, which is higher than 11.7 % of green CsPbBr₃ and 8.3 % of red CsPb(Br/I)₃ film. This study develops an effective approach to preparing CsPbX₃ nanocrystal thin films, opening a new avenue to design perovskite nanocrystals-based devices for lighting and display applications.

Ultrahigh-Performance Optoelectronic Skin Based on Intrinsically Stretchable Perovskite-Polymer Heterojunction Transistors

The optoelectronic skin is acknowledged as the world's current cutting-edge technology in the fields of wearable healthcare monitoring, soft robotics, artificial retinas, and so on. However, the difficulty in preparing stretchable photosensitive polymers and the high-crystallization nature of most reported photosensitive materials (such as perovskites) severely restrict the development of skin-like optoelectronic devices. Herein, a surface energy-induced self-assembly methodology is proposed to form easily transferrable and flexible perovskite quantum dot (PQD) films with a worm-like morphology. Furthermore, intrinsically stretchable phototransistors (ISTPTs) are fabricated based on a stretchable photosensitive layer heterojunction consisting of worm-like PQD films and hybrid polymer semiconductors. The obtained ISTPTs display highly sensitive response to high-energy photons of X-ray (with a detection limit of 79 nGy s^-1 , that is 560 times lower than commercial medical chest X-ray diagnosis) and ultraviolet (with photosensitivity of 5 × 10⁶ and detectable light intensity of 50 nW cm^-2 among the highest performance of reported photodetectors). In addition, these ISTPTs demonstrate desirable e-skin characteristics with high strain tolerance, high sensing specificity, high optical transparency, and good skin conformability. The surface energy-induced self-assembly methodology for the preparation of ISTPTs is a critical demonstration to enable low-cost and high-performance optoelectronic skins.

Direct Atomic-scale Imaging of a Screw Dislocation Core Structure in Inorganic Halide Perovskites

Topological defects such as dislocations in crystalline materials usually have major impacts on materials’ mechanical, chemical and physical properties. Detailed knowledge of dislocation core structures is essential to understand their...

Ultrafast and stable planar photodetector based on SnS2 nanosheets/perovskite structure

Two-dimensional (2D) transition metal dichalcogenides are promising candidates of photodetectors where they are commonly grown parallel to the substrate due to their 2D characteristics in micrometer scales from exfoliation of bulk crystals or through high temperature chemical vapor deposition (CVD) methods. In this study, semi-hexagonal vertical nanosheets of SnS2 layered have been fabricated on FTO substrate without using Sn source through CVD method at relatively low temperature (500 °C). Due to exceptional band alignment of triple cation lead perovskite (TCLP) with semi-hexagonal SnS2 nanosheets, an improved photodetector has been fabricated. This type of photodetectors fabricated through lithography-free and electrodes metallization free approach with remarkable fast response (20.7 µs/31.4 µs as rising /falling times), showed high photoresponsivity, external quantum efficiency and detectivity of 1.84 AW-1, 513% and 1.69 × 1011, respectively under illumination of incident light with wavelength of 445 nm. The stability of the photodetectors has been studied utilizing a protective PMMA layer on the perovskite layer in 100% humidity. The introduced growth and fabrication process of the planar photodetector, including one/two dimensional interface through the edges/basal planes of layered materials with perovskite film, paves a way for the large scale, cost-effective and high-performance optoelectronic devices.

Photodetectors with High Responsivity by Thickness Tunable Mixed Halide Perovskite Nanosheets

Chemical transformation of typically "nonlayered" phases into two-dimensional structures remains a formidable task. Among the thickness tunable CsPbX₃ (X = Br, Br/I, I) nanosheets (NSs), CsPbBr_1.5I_1.5 NSs with a thickness of ∼4.9 nm have structural stability superior to ∼6.8 nm CsPbI₃ NSs and better hole mobility than ∼3.7 nm CsPbBr₃ NSs. Moving beyond the much-explored CsPbBr₃ photodetectors, we demonstrate a sharp improvement of the photodetection of CsPbBr_1.5I_1.5 NS devices by thickening the NSs to ∼6.1 nm through combining 8-carbon and 18-carbon ligand surfactants. Thereby, the responsivity increases up to one of the highest values of 3313 A W^-1 at 1.5 V (and 3946 A W^-1 at 2 V) with detectivity of 1.6 × 10¹¹ Jones at 1.5 V, due to the increase in carrier mobility up to 7.9 × 10^-4 cm² V^-1 s^-1. The better device performance of the NSs than 8.6-13.9 nm nanocubes (NCs) is due to their planarity which facilitates in-plane mobilization of the charge carriers.

Revealing photoluminescence mechanisms of single CsPbBr3/Cs4PbBr6 core/shell perovskite nanocrystals

CsPbBr3 nanocrystals (NCs) encapsulated by Cs4PbBr6 has attracted extensive attention due to good stability and high photoluminescence (PL) emission efficiency. However, the origin of photoluminescence (PL) emission from CsPbBr3/Cs4PbBr6 composite materials has been controversial. In this work, we prepare CsPbBr3/Cs4PbBr6 core/shell nanoparticles and firstly study the mechanism of its photoluminescence (PL) at the single-particle level. Based on photoluminescence (PL) intensity trajectories and photon antibunching measurements, we have found that photoluminescence (PL) intensity trajectories of individual CsPbBr3/Cs4PbBr6 core/shell NCs vary from the uniform longer periods to multiple-step intensity behaviors with increasing excitation level. Meanwhile, second-order photon correlation functions exhibit single photon emission behaviors especially at lower excitation levels. However, the PL intensity trajectories of individual Cs4PbBr6 NCs demonstrate apparent "burst-like" behaviors with very high values of g 2(0) at any excitation power. Therefore, the distinguishable emission statistics help us to elucidate whether the photoluminescence (PL) emission of CsPbBr3/Cs4PbBr6 core/shell NCs stems from band-edge exciton recombination of CsPbBr3 NCs or intrinsic Br vacancy states of Cs4PbBr6 NCs. These findings provide key information about the origin of emission in CsPbBr3/Cs4PbBr6 core/shell nanoparticles, which improves their utilization in the further optoelectronic applications.

Microsteganography on all inorganic perovskite micro-platelets by direct laser writing

Direct laser writing (DLW) is a mask-free and cost-efficient micro-fabrication technology, which has been explored to pattern structures on perovskites. However, there is still a lack of research on DLW methods for microsteganography. Herein, we developed a sophisticated DLW condition to pattern on CsPbBr₃ perovskite micro-platelets (MPs). In addition to the reversible PL quenching caused by photo-induced ion migration, permanent nonradiative centers are also produced by the DLW treatment. Therefore, the patterned information is retained after long-term storage. Meanwhile, the mild DLW condition only results in a faint trace, which is almost invisible under a regular optical microscope. Thus, the patterned information is hidden unless applying an excitation source, which paves the way for applications in microsteganography and anti-counterfeiting. As a proof-of-concept, different patterns are drawn on the CsPbBr₃ MPs by DLW, which are only observable under a fluorescence microscope.

p-Type Carbon Dots for Effective Surface Optimization for Near-Record-Efficiency CsPbI2 Br Solar Cells

Interface modification to minimize charge recombination and trapping for efficient charge transport is crucial for the performance of perovskite solar cells (PSCs). Herein, functionalized p-type blue carbon dots (B-CDs) are ventured as an interface passivation layer to enhance the efficiency and long-term stability of all-inorganic CsPbI₂ Br PSCs. It is found that first the blue carbon dots with abundant NH, CN, CO, and CO functional groups effectively passivate defects by reacting with I^- and Pb²⁺ ions in the perovskite through hydrogen and coordinative bonds. Second, the p-type B-CDs modifiers form a P-N junction with the n-type perovskite to provide efficient pathways for hole transfer and electron blocking. Third, the B-CDs increase the hydrophobicity of the perovskite film to improve the stability of CsPbI₂ Br PSCs. With the above advantages, the CsPbI₂ Br PSC with B-CDs modification shows an efficiency as high as 16.76%, one of the highest for its type. In addition, the modification renders significant improvement of air and light stability, with 95.33% of the initial PCE retained after storage in the ambient environment for 1000 h. This work demonstrates the great potential of B-CDs application in perovskite-based optoelectronic devices.

State of the Art and Prospects for Halide Perovskite Nanocrystals

Metal-halide perovskites have rapidly emerged as one of the most promising materials of the 21st century, with many exciting properties and great potential for a broad range of applications, from photovoltaics to optoelectronics and photocatalysis. The ease with which metal-halide perovskites can be synthesized in the form of brightly luminescent colloidal nanocrystals, as well as their tunable and intriguing optical and electronic properties, has attracted researchers from different disciplines of science and technology. In the last few years, there has been a significant progress in the shape-controlled synthesis of perovskite nanocrystals and understanding of their properties and applications. In this comprehensive review, researchers having expertise in different fields (chemistry, physics, and device engineering) of metal-halide perovskite nanocrystals have joined together to provide a state of the art overview and future prospects of metal-halide perovskite nanocrystal research.

Carbon Nanodots as a Potential Transport Layer for Boosting Performance of All-Inorganic Perovskite Nanocrystals-Based Photodetector

A low-cost and simple drop-casting method was used to fabricate a carbon nanodot (C-dot)/all-inorganic perovskite (CsPbBr3) nanosheet bilayer heterojunction photodetector on a SiO2/Si substrate. The C-dot/perovskite bilayer heterojunction photodetector shows a high performance with a responsivity (R) of 1.09 A/W, almost five times higher than that of a CsPbBr3-based photodetector (0.21 A/W). In addition, the hybrid photodetector exhibits a fast response speed of 1.318/1.342 µs and a highly stable photocurrent of 6.97 µA at 10 V bias voltage. These figures of merits are comparable with, or much better than, most reported perovskite heterojunction photodetectors. UV–Vis absorption and photoluminescent spectra measurements reveal that the C-dot/perovskite bilayer heterojunction has a band gap similar to the pure perovskite layer, confirming that the absorption and emission in the bilayer heterojunction is dominated by the top layer of the perovskite. Moreover, the emission intensity of the C-dot/perovskite bilayer heterojunction is less than that of the pure perovskite layer, indicating that a significant number of charges were extracted by the C-dot layer. The studied band alignment of the C-dots and perovskites in the dark and under emission reveals that the photodetector has a highly efficient charge separation mechanism at the C-dot/perovskite interface, where the recombination rate between photogenerated electrons and holes is significantly reduced. This highly efficient charge separation mechanism is the main reason behind the enhanced performance of the C-dot/perovskite bilayer heterojunction photodetector.

Recent Progress of Flexible Image Sensors for Biomedical Applications

Flexible image sensors have attracted increasing attention as new imaging devices owing to their lightness, softness, and bendability. Since light can measure inside information from outside of the body, optical-imaging-based approaches, such as X-rays, are widely used for disease diagnosis in hospitals. Unlike conventional sensors, flexible image sensors are soft and can be directly attached to a curved surface, such as the skin, for continuous measurement of biometric information with high accuracy. Therefore, they are expected to gain wide application to wearable devices, as well as home medical care. Herein, the application of such sensors to the biomedical field is introduced. First, their individual components, photosensors, and switching elements, are explained. Then, the basic parameters used to evaluate the performance of each of these elements and the image sensors are described. Finally, examples of measuring the dynamic and static biometric information using flexible image sensors, together with relevant real-world measurement cases, are presented. Furthermore, recent applications of the flexible image sensors in the biomedical field are introduced.

High-Performance Photodetectors Based on Nanostructured Perovskites

In recent years, high-performance photodetectors have attracted wide attention because of their important applications including imaging, spectroscopy, fiber-optic communications, remote control, chemical/biological sensing and so on. Nanostructured perovskites are extremely suitable for detective applications with their long carrier lifetime, high carrier mobility, facile synthesis, and beneficial to device miniaturization. Because the structure of the device and the dimension of nanostructured perovskite have a profound impact on the performance of photodetector, we divide nanostructured perovskite into 2D, 1D, and 0D, and review their applications in photodetector (including photoconductor, phototransistor, and photodiode), respectively. The devices exhibit high performance with high photoresponsivity, large external quantum efficiency (EQE), large gain, high detectivity, and fast response time. The intriguing properties suggest that nanostructured perovskites have a great potential in photodetection.

A flexible ultrasensitive optoelectronic sensor array for neuromorphic vision systems

The challenges of developing neuromorphic vision systems inspired by the human eye come not only from how to recreate the flexibility, sophistication, and adaptability of animal systems, but also how to do so with computational efficiency and elegance. Similar to biological systems, these neuromorphic circuits integrate functions of image sensing, memory and processing into the device, and process continuous analog brightness signal in real-time. High-integration, flexibility and ultra-sensitivity are essential for practical artificial vision systems that attempt to emulate biological processing. Here, we present a flexible optoelectronic sensor array of 1024 pixels using a combination of carbon nanotubes and perovskite quantum dots as active materials for an efficient neuromorphic vision system. The device has an extraordinary sensitivity to light with a responsivity of 5.1 × 10⁷ A/W and a specific detectivity of 2 × 10¹⁶ Jones, and demonstrates neuromorphic reinforcement learning by training the sensor array with a weak light pulse of 1 μW/cm².

A flexible ultrasensitive optoelectronic sensor array for neuromorphic vision systems

The challenges of developing neuromorphic vision systems inspired by the human eye come not only from how to recreate the flexibility, sophistication, and adaptability of animal systems, but also how to do so with computational efficiency and elegance. Similar to biological systems, these neuromorphic circuits integrate functions of image sensing, memory and processing into the device, and process continuous analog brightness signal in real-time. High-integration, flexibility and ultra-sensitivity are essential for practical artificial vision systems that attempt to emulate biological processing. Here, we present a flexible optoelectronic sensor array of 1024 pixels using a combination of carbon nanotubes and perovskite quantum dots as active materials for an efficient neuromorphic vision system. The device has an extraordinary sensitivity to light with a responsivity of 5.1 × 10⁷ A/W and a specific detectivity of 2 × 10¹⁶ Jones, and demonstrates neuromorphic reinforcement learning by training the sensor array with a weak light pulse of 1 μW/cm².

To emulate nature biological processing, highly-integrated ultra-sensitive artificial neuromorphic system is highly desirable. Here, the authors report flexible sensor array of 1024 pixels using combination of carbon nanotubes and perovskite QDs as active matetials, achieving highly responsive device for reinforcement learning.

Photocurrent in Metal-Halide Perovskite/Organic Semiconductor Heterostructures: Impact of Microstructure on Charge Generation Efficiency

Hybrid organic-inorganic metal-halide perovskites have emerged as versatile materials for enabling low-cost, mechanically flexible optoelectronic applications. The progress has been commendable; however, technological breakthroughs have outgrown the basic understanding of processes occurring in bulk and at device interfaces. Here, we investigated the photocurrent at perovskite/organic semiconductor interfaces in relation to the microstructure of electronically active layers. We found that the photocurrent response is significantly enhanced in the bilayer structure as a result of a more efficient dissociation of the photogenerated excitons and trions in the perovskite layer. The increase in the grain size within the organic semiconductor layer results in reduced trapping and further enhances the photocurrent by extending the photocarriers' lifetime. The photodetector responsivity and detectivity have improved by 1 order of magnitude in the optimized samples, reaching values of 6.1 ± 1.1 A W^-1, and 1.5 × 10¹¹ ± 4.7 × 10¹⁰ Jones, respectively, and the current-voltage hysteresis has been eliminated. Our results highlight the importance of fine-tuning film microstructure in reducing the loss processes in thin-film optoelectronics based on metal-halide semiconductors and provide a powerful interfacial design method to consistently achieve high-performance photodetectors.

Low-Dimensional Metal Halide Perovskite Photodetectors

Metal halide perovskites (MHPs) have been a hot research topic due to their facile synthesis, excellent optical and optoelectronic properties, and record-breaking efficiency of corresponding optoelectronic devices. Nowadays, the development of miniaturized high-performance photodetectors (PDs) has been fueling the demand for novel photoactive materials, among which low-dimensional MHPs have attracted burgeoning research interest. In this report, the synthesis, properties, photodetection performance, and stability of low-dimensional MHPs, including 0D, 1D, 2D layered and nonlayered nanostructures, as well as their heterostructures are reviewed. Recent advances in the synthesis approaches of low-dimensional MHPs are summarized and the key concepts for understanding the optical and optoelectronic properties related to the PD applications of low-dimensional MHPs are introduced. More importantly, recent progress in novel PDs based on low-dimensional MHPs is presented, and strategies for improving the performance and stability of perovskite PDs are highlighted. By discussing recent advances, strategies, and existing challenges, this progress report provides perspectives on low-dimensional MHP-based PDs in the future.

Recent Advances and Challenges in Halide Perovskite Crystals in Optoelectronic Devices from Solar Cells to Other Applications

Organic-inorganic hybrid perovskite materials have attracted tremendous attention as a key material in various optoelectronic devices. Distinctive optoelectronic properties, such as a tunable energy band position, long carrier diffusion lengths, and high charge carrier mobility, have allowed rapid progress in various perovskite-based optoelectronic devices (solar cells, photodetectors, light emitting diodes (LEDs), and lasers). Interestingly, the developments of each field are based on different characteristics of perovskite materials which are suitable for their own applications. In this review, we provide the fundamental properties of perovskite materials and categorize the usages in various optoelectronic applications. In addition, the prerequisite factors for those applications are suggested to understand the recent progress of perovskite-based optoelectronic devices and the challenges that need to be solved for commercialization.

Ultrasensitive Flexible Solar-Blind Photodetectors Based on Graphene/Amorphous Ga2O3 van der Waals Heterojunctions

Flexible photodetectors (PDs) have become the latest research interest owing to their potential applications in future implantable sensors and foldable/wearable optoelectronics. Ga₂O₃, an emerging ultrawide band gap semiconductor, is considered as the native photosensitive material for solar-blind PDs. The reported fabrication temperature of Ga₂O₃ films is usually above 600 °C, which hinders its practical application for flexible devices. In this work, flexible PDs based on graphene/amorphous Ga₂O₃ van der Waals heterojunctions are fabricated, which demonstrate promising photoresponse to solar-blind ultraviolet light. The device yields a high photo-to-dark current ratio (∼10⁵) and large responsivity (22.75 A/W) under 254 nm light illumination, which could be ascribed to the efficient photogenerated electron-hole pair separation by the strong built-in field. Moreover, flexible PDs also show long-term environmental stability and outstanding mechanical flexibility without any encapsulation. Our work provides a new potential candidate for realizing cost-effective high-performance flexible optoelectronic applications.

Flexible Ultrathin Single-Crystalline Perovskite Photodetector

Flexible optoelectronic devices attract considerable attention due to their prominent role in creating novel wearable apparatus for bionics, robotics, health care, and so forth. Although bulk single-crystalline perovskite-based materials are well-recognized for the high photoelectric conversion efficiency than the polycrystalline ones, their stiff and brittle nature unfortunately prohibits their application for flexible devices. Here, we introduce ultrathin single-crystalline perovskite film as the active layer and demonstrate a high-performance flexible photodetector with prevailing bending reliability. With a much-reduced thickness of 20 nm, the photodetector made of this ultrathin film can achieve a significantly increased responsivity as 5600A/W, 2 orders of magnitude higher than that of recently reported flexible perovskite photodetectors. The demonstrated 0.2 MHz 3 dB bandwidth further paves the way for high-speed photodetection. Notably, all its optoelectronic characteristics resume after being bent over thousands of times. These results manifest the great potential of single-crystalline perovskite ultrathin films for developing wearable and flexible optoelectronic devices.

Dimensionality engineering of metal halide perovskites

Metal halide perovskites are a class of materials that are ideal for photodetectors and solar cells due to their excellent optoelectronic properties. Their low-cost and low temperature synthesis have made them attractive for extensive research aimed at revolutionizing the semiconductor industry. The rich chemistry of metal halide perovskites allows compositional engineering resulting in facile tuning of the desired optoelectronic properties. Moreover, using different experimental synthesis and deposition techniques such as solution processing, chemical vapor deposition and hot-injection methods, the dimensionality of the perovskites can be altered from 3D to 0D, each structure opening a new realm of applications due to their unique properties. Dimensionality engineering includes both morphological engineering-reducing the thickness of 3D perovskite into atomically thin films-and molecular engineering-incorporating long-chain organic cations into the perovskite mixture and changing the composition at the molecular level. The optoelectronic properties of the perovskite structure including its band gap, binding energy and carrier mobility depend on both its composition and dimensionality. The plethora of different photodetectors and solar cells that have been made with different compositions and dimensions of perovskite will be reviewed here. We will conclude our review by discussing the kinetics and dynamics of different dimensionalities, their inherent stability and toxicity issues, and how reaching similar performance to 3D in lower dimensionalities and their large-scale deployment can be achieved.

Reducing current fluctuation of Cs3Bi2Br9 perovskite photodetectors for diffuse reflection imaging with wide dynamic range

Recently, the newly booming metal halide perovskites have attracted extensive attention worldwide due to their outstanding optoelectronic performance, and are expected to be ideal candidates for photodetectors (PDs). However, there is still lack of perovskite PDs-based imaging devices coming into commercialization stage, due to some practical reasons including toxicity brought by lead-based perovskites and the large light current fluctuations. In this paper, for the first time we fabricate a lead-free Cs₃Bi₂Br₉ perovskite PD, and build a prototype of this perovskite PD-based imaging system with diffuse reflection imaging mode. Moreover, we propose a new parameter F related to light current fluctuation to evaluate imaging performance of a PD especially for weak diffuse light condition, and prove its usability by comparison of unoptimized lead-free Cs₃Bi₂Br₉ perovskite PD and atomic layer deposition (ALD) optimized Cs₃Bi₂Br₉ PD. ALD-optimization can improve the quality of perovskite film and suppress the dark current and current fluctuation. Finally, we obtain satisfactory diffuse reflection images of 2D and 3D objects with wide dynamic range. Therefore, the ALD-optimized Cs₃Bi₂Br₉ PD has addressed two major concerns about perovskite PDs-based imaging devices, that may extend application of perovskite materials and improve imaging quality.

Strategy of All-Inorganic Cs3Cu2I5/Si-Core/Shell Nanowire Heterojunction for Stable and Ultraviolet-Enhanced Broadband Photodetectors with Imaging Capability

In this study, for the first time, the integration of nontoxic ternary copper halide Cs₃Cu₂I₅ with one-dimensional Si nanowires (NWs) was reported to achieve an ultraviolet (UV)-enhanced Si NW broadband photodetector. A compact and uniform coverage of Cs₃Cu₂I₅ on the top and sidewall of Si NWs formed a core/shell heterostructure, in which Si NWs served as the growth template and the electron-transport layer, and Cs₃Cu₂I₅ was employed as the UV photoactive material and the hole-transport layer. The as-fabricated Cs₃Cu₂I₅/Si-core/shell NW photodetector demonstrates a multiband photodetection from the deep UV to near-infrared region, a fast response speed of 92.5/189.2 μs (265 nm), and a high photoresponsivity of 130 mA/W, nearly 600 times as much as the reference device constructed using Si NWs. More importantly, the proposed photodetector exhibits an excellent stability in air ambient. Typically, it could endure a high temperature of 60 °C for 11 h consecutive working; after storage in air ambient for two weeks, its photodetection ability can almost be retained. Additionally, high-resolution UV imaging applications were presented by employing the proposed photodetector as sensing pixels. These obtained results verify the effectiveness of the Cs₃Cu₂I₅/Si-core/shell NW heterojunction strategy for UV-enhanced broadband photodetection, making such a device really possible for practical applications.

Flexible and Self-Powered Photodetector Arrays Based on All-Inorganic CsPbBr3 Quantum Dots

Flexible devices are garnering substantial interest owing to their potential for wearable and portable applications. Here, flexible and self-powered photodetector arrays based on all-inorganic perovskite quantum dots (QDs) are reported. CsBr/KBr-mediated CsPbBr₃ QDs possess improved surface morphology and crystallinity with reduced defect densities, in comparison with the pristine ones. Systematic material characterizations reveal enhanced carrier transport, photoluminescence efficiency, and carrier lifetime of the CsBr/KBr-mediated CsPbBr₃ QDs. Flexible photodetector arrays fabricated with an optimum CsBr/KBr treatment demonstrate a high open-circuit voltage of 1.3 V, responsivity of 10.1 A W^-1 , specific detectivity of 9.35 × 10¹³ Jones, and on/off ratio up to ≈10⁴ . Particularly, such performance is achieved under the self-powered operation mode. Furthermore, outstanding flexibility and electrical stability with negligible degradation after 1600 bending cycles (up to 60°) are demonstrated. More importantly, the flexible detector arrays exhibit uniform photoresponse distribution, which is of much significance for practical imaging systems, and thus promotes the practical deployment of perovskite products.

Synthesis and optical applications of low dimensional metal-halide perovskites

Metal halide perovskites have received substantial attention in research communities due to their outstanding efficiency achievements in the field of photovoltaics, optoelectronics and electronics, exhibiting extraordinary optical, electrical and mechanical properties. The exceptional structural tunability enables perovskite material to possess low-dimensional form at the atomic level and extends their applications into optoelectronic and photonic fields. This review discusses the recent progress of synthetic routes and fundamental optoelectronic properties of low-dimensional metal halide perovskites. In addition, the focus is to highlight the potential applications of perovskites in various devices including solar cells, light-emitting diodes, lasers, waveguides and memory devices. Finally, outlooks and the challenges that face the development of the perovskite materials in the near future are also presented.

Nested Inverse Opal Perovskite toward Superior Flexible and Self-Powered Photodetection Performance

Flexible and self-powered perovskite photodetectors have attracted tremendous research interests due to their applications in wearable and portable devices. However, the conventional planar structured photodetectors are always accompanied with limited device performance and undesired mechanical stability. Herein, a nested inverse opal (NIO) structured perovskite photodetector via a facile template-assisted spin-coating method is reported. The coupling effect of enhanced light capture, increased carrier transport, and improved perovskite film quality enables NIO device to exhibit superior photoresponse performance. The NIO photodetector exhibits a high responsivity of 473 mA W^-1 and detectivity up to 1.35 × 10¹³ Jones at 720 nm without external bias. The NIO structure can efficiently release mechanical stress during the bending process and the photocurrent has no degradation even after 500 cycles of bending. Moreover, the unencapsulated NIO device can operate for over 16 d under ambient conditions, presenting a significantly enhanced environmental stability compared to the planar device. This work demonstrates that deliberate structural design is an effective avenue for constructing self-powered, flexible, and stable optoelectronic devices.

Advanced Soft Materials, Sensor Integrations, and Applications of Wearable Flexible Hybrid Electronics in Healthcare, Energy, and Environment

Recent advances in soft materials and system integration technologies have provided a unique opportunity to design various types of wearable flexible hybrid electronics (WFHE) for advanced human healthcare and human-machine interfaces. The hybrid integration of soft and biocompatible materials with miniaturized wireless wearable systems is undoubtedly an attractive prospect in the sense that the successful device performance requires high degrees of mechanical flexibility, sensing capability, and user-friendly simplicity. Here, the most up-to-date materials, sensors, and system-packaging technologies to develop advanced WFHE are provided. Details of mechanical, electrical, physicochemical, and biocompatible properties are discussed with integrated sensor applications in healthcare, energy, and environment. In addition, limitations of the current materials are discussed, as well as key challenges and the future direction of WFHE. Collectively, an all-inclusive review of the newly developed WFHE along with a summary of imperative requirements of material properties, sensor capabilities, electronics performance, and skin integrations is provided.

Enhanced Optical Absorption and Slowed Light of Reduced-Dimensional CsPbBr3 Nanowire Crystal by Exciton-Polariton

Metallic halide perovskites are promising for low-cost, low-consumption, flexible optoelectronic devices. However, research is lacking on light propagation and dielectric behaviors as fundamental properties for optoelectronic perovskite applications, particularly the mechanism supporting a strong light-matter interaction and the different properties of low-dimensional structures from their bulk counterparts. We use spatially resolved photoluminescence (SRPL) spectroscopy to explore light propagation and measure the refractive index of CsPbBr₃ nanowires (NWs). Owing to strong exciton-photon interactions, light is guided as an exciton-polariton inside the NWs at room temperature. Remarkable spatial dispersion is confirmed, in which both the real and imaginary parts of the refractive index increase dramatically approaching exciton resonance, thus slowing light and enhancing absorption, respectively. Reducing the NWs dimension increases exciton-photon coupling and the exciton fraction, increasing the light absorption coefficient and group index 5- and 3-fold, respectively, relative to those of bulk films and slowing the light group velocity by ∼74%. Furthermore, dispersive absorption induces an energy redshift to the propagating PL at 4.1-5.5 meV μm^-1 until the bottleneck region. These findings clarify light-matter interaction in confined perovskite structures to improve their optoelectronic device performance.

Substantially Improving Device Performance of All-Inorganic Perovskite-Based Phototransistors via Indium Tin Oxide Nanowire Incorporation

All-inorganic halide perovskites (IHPs) have attracted enormous attention due to their intrinsically high optical absorption coefficient and superior ambient stabilities. However, the photosensitivity of IHP-based photodetectors is still restricted by their poor conductivities. Here, a facile design of hybrid phototransistors based on the CsPbBr₃ thin film and indium tin oxide (ITO) nanowires (NWs) integrated into a InGaZnO channel in order to achieve both high photoresponsivity and fast response is reported. The metallic ITO NWs are employed as electron pumps and expressways to efficiently extract photocarriers from CsPbBr₃ and inject electrons into InGaZnO. The obtained device exhibits the outstanding responsivity of 4.9 × 10⁶ A W^-1 , which is about 100-fold better than the previous best results of CsPbBr₃ -based photodetectors, together with the fast response (0.45/0.55 s), long-term stability (200 h in ambient), and excellent mechanical flexibility. By operating the phototransistor in the depletion regime, an ultrahigh specific detectivity up to 7.6 × 10¹³ Jones is achieved. More importantly, the optimized spin-coating manufacturing process is highly beneficial for achieving uniform InGaZnO-ITO/perovskite hybrid films for high-performance flexible detector arrays. All these results can not only indicate the potential of these hybrid phototransistors but also provide a valuable insight into the design of hybrid material systems for high-performance photodetection.

Recent advances in solution-processed photodetectors based on inorganic and hybrid photo-active materials

Due to their excellent and tailorable optoelectronic performance, low cost, facile fabrication, and compatibility with flexible substrates, solution-processed inorganic and hybrid photo-active materials have attracted extensive interest for next-generation photodetector applications. This review gives a comprehensive compilation of solution-processed photodetectors. The basic structures of the device and important parameters of photodetectors will be firstly summarized. Then the development of various solution processing technologies containing solution synthesis and liquid phase film-forming processes for the preparation of semiconductor films is described. From the materials science point of view, we give a comprehensive overview about the current status of solution processed semiconductor materials including inorganic and hybrid photo-active materials for the application of photodetectors. Moreover, challenges and future trends in the field of solution-processed photodetectors are proposed.

Preventing Anion Exchange between Perovskite Nanocrystals by Confinement in Porous SiO2 Nanobeads

All-inorganic CsPbX₃ (X = Cl, Br, I) perovskite nanocrystals (NCs) are highly attractive due to their outstanding optical and electrical properties. However, poor stability and easy anion exchanges between CsPbX₃ nanocrystals with different halides limit their applications in light-emitting diodes (LEDs). To solve the problems, we developed an approach to in situ synthesize CsPbX₃ NCs into porous silica colloidal spheres, which can effectively prevent anion exchange and increase photo stability. Based on our results, we first proved that the anion exchange between CsPbX₃ nanocrystals is mainly driven by physical collision of the nanocrystals, not requiring a bridge such as a solvent. We subsequently used an optimized ratio of green, red, and blue SiO₂/CsPbX₃ composites as solid-state luminescent materials to fabricate single-layer white light-emitting diodes (WLEDs). No anion exchanges have been observed in the LED fabrication and lighting process.

Review on Recent Progress of All-Inorganic Metal Halide Perovskites and Solar Cells

All-inorganic perovskites are considered to be one of the most appealing research hotspots in the field of perovskite photovoltaics in the past 3 years due to their superior thermal stability compared to their organic-inorganic hybrid counterparts. The power-conversion efficiency has reached 17.06% and the number of important publications is ever increasing. Here, the progress of inorganic perovskites is systematically highlighted, covering materials design, preparation of high-quality perovskite films, and avoidance of phase instabilities. Inorganic perovskites, nanocrystals, quantum dots, and lead-free compounds are discussed and the corresponding device performances are reviewed, which have been realized on both rigid and flexible substrates. Methods for stabilization of the cubic phase of low-bandgap inorganic perovskites are emphasized, which is a prerequisite for highly efficient and stable solar cells. In addition, energy loss mechanisms both in the bulk of the perovskite and at the interfaces of perovskite and charge selective layers are unraveled. Reported approaches to reduce these charge-carrier recombination losses are summarized and complemented by methods proposed from our side. Finally, the potential of inorganic perovskites as stable absorbers is assessed, which opens up new perspectives toward the commercialization of inorganic perovskite solar cells.

Inorganic and Layered Perovskites for Optoelectronic Devices

Organic-inorganic halide perovskites are making breakthroughs in a range of optoelectronic devices. Reports of >23% certified power conversion efficiency in photovoltaic devices, external quantum efficiency >21% in light-emitting diodes (LEDs), continuous-wave lasing and ultralow lasing thresholds in optically pumped lasers, and detectivity in photodetectors on a par with commercial GaAs rivals are being witnessed, making them the fastest ever emerging material technology. Still, questions on their toxicity and long-term stability raise concerns toward their market entry. The intrinsic instability in these materials arises due to the organic cation, typically the volatile methylamine (MA), which contributes to hysteresis in the current-voltage characteristics and ion migration. Alternative inorganic substitutes to MA, such as cesium, and large organic cations that lead to a layered structure, enhance structural as well as device operational stability. These perovskites also provide a high exciton binding energy that is a prerequisite to enhance radiative emission yield in LEDs. The incorporation of inorganic and layered perovskites, in the form of polycrystalline films or as single-crystalline nanostructure morphologies, is now leading to the demonstration of stable devices with excellent performance parameters. Herein, key developments made in various optoelectronic devices using these perovskites are summarized and an outlook toward stable yet efficient devices is presented.

Unveiling the interfacial electrochemiluminescence behavior of lead halide perovskite nanocrystals

In this study, a three-phase heterostructure interface including glassy carbon (conducting medium), CsPbBr₃ perovskite nanocrystals (PNCs, emitter) and acetonitrile (electrolyte) is constructed for fully investigating the interfacial electrochemiluminescence (ECL) behavior of CsPbBr₃ PNCs. We find that these interfaces serve as bridges for efficient electron-hole transfer during the ECL process. As a proof of concept, the increase of the heterostructure interface area will accordingly enhance the ECL intensity of CsPbBr₃ PNCs. About seven-fold enhancement of the ECL intensity could be achieved when the interface area has triple-fold increase, which provides a new perspective to construct more efficient ECL systems via interface engineering.

Improving Charge Collection from Colloidal Quantum Dot Photovoltaics by Single-Walled Carbon Nanotube Incorporation

Improving charge collection is one of the key issues for high-performance PbS colloidal quantum dot photovoltaics (CQDPVs) due to the considerable charge loss resulting from the low mobility and large defect densities of the 1,2-ethanedithiol-treated PbS quantum dot hole-transporting layer (HTL). To overcome these limitations, single-walled carbon nanotubes (SWNTs) and C₆₀-encapsulated SWNTs (C₆₀@SWNTs) are incorporated into the HTL in CQDPVs. SWNT-incorporated CQDPV demonstrates a significantly improved short-circuit current density (J_SC), and C₆₀@SWNT-incorporated CQDPV exhibits an even higher J_SC than that of pristine SWNT. Both result in improved power-conversion efficiencies. Hole-selective, photoinduced charge extraction with linearly increasing voltage measurements demonstrates that SWNT or C₆₀@SWNT incorporation improves hole-transporting behavior, rendering suppressed charge recombination and enhanced mobility of the HTL. The enhanced p-type characteristics and the improved hole diffusion lengths of SWNT- or C₆₀@SWNT-incorporated HTL bring improvement of the entire hole-transporting length and enable lossless hole collection, which results in the J_SC enhancement of the CQDPVs.

Band Gap Engineering in Cs2(NaxAg1-x)BiCl6 Double Perovskite Nanocrystals

Lead-free double perovskite materials, A₂M(I)M'(III)X₆, have recently attracted attention as environment-friendly alternatives to lead-based perovskites, APbX₃, because of both rich fundamental science and potential applications. We report band gap tuning via alloying of Cs₂AgBiCl₆ nanocrystals (NCs) with nontoxic, abundant Na. It results in a series of Cs₂Na_xAg_1-xBiCl₆ (x = 0, 0.25, 0.5, 0.75, and 1) double perovskite NCs, leading to increase in optical band gap from 3.39 eV (x = 0) to 3.82 eV (x = 1) and 30-fold increment in weak photoluminescence. The tuning of band gap has been further explored by electronic structure calculation under the framework of density functional theory (DFT). The latter confirms that the increase in band gap is due to reduction of Ag contribution near valence band maxima (VBM) on incorporation of Na ion in place of Ag. These alloyed double perovskites can have useful potential applications in optoelectronic devices.

Atomic-Layer Deposition-Assisted Double-Side Interfacial Engineering for High-Performance Flexible and Stable CsPbBr3 Perovskite Photodetectors toward Visible Light Communication Applications

Self-powered photodetectors (PDs) based on inorganic metal halide perovskites are regarded as promising alternatives for the next generation of photodetectors. However, uncontrollable film growth and sluggish charge extraction at interfaces directly limit the sensitivity and response speed of perovskite-based photodetectors. Herein, by assistance of an atomic layer deposition (ALD) technique, CsPbBr₃ perovskite thin films with preferred orientation and enlarged grain size are obtained on predeposited interfacial modification layers. Thanks to improved film quality and double side interfacial engineering, the optimized CsPbBr₃ (Al₂ O₃ /CsPbBr₃ /TiO₂ , ACT) perovskite PDs exhibit outstanding performance with ultralow dark current of 10^-11 A, high detectivity of 1.88 × 10¹³ Jones and broad linear dynamic range (LDR) of 172.7 dB. Significantly, excellent long-term environmental stability (ambient conditions >100 d) and flexibility stability (>3000 cycles) are also achieved. The remarkable performance is credited to the synergistic effects of high carrier conductivity and collection efficiency, which is assisted by ALD modification layers. Finally, the ACT PDs are successfully integrated into a visible light communication system as a light receiver on transmitting texts, showing a bit rate as high as 100 kbps. These results open the window of high performance all-inorganic halide perovskite photodetectors and extends to rational applications for optical communication.

All-Perovskite Photodetector with Fast Response

Perovskites have attracted substantial attention on account of their excellent physical properties and simple preparation process. Here we demonstrated an improved photodetector based on solution-processing organic-inorganic hybrid perovskite CH3NH3PbI3-xClx layer decorated with CsPbBr3 perovskite quantum dots. The CH3NH3PbI3-xClx-CsPbBr3 photodetector was operated in a visible light region, which appeared high responsivity (R = 0.39 A/W), detectivity (D* = 5.43 × 109 Jones), carrier mobility (μp = 172 cm2 V-1 s-1 and μn = 216 cm2 V-1 s-1), and fast response (rise time 121 μs and fall time 107 μs). The CH3NH3PbI3-xClx-CsPbBr3 heterostructure is anticipated to find comprehensive applications in future high-performance photoelectronic devices.

MOF-Confined Sub-2 nm Stable CsPbX3 Perovskite Quantum Dots

The metal halide with a perovskite structure has attracted significant attention due to its defect-tolerant photophysics and optoelectronic features. In particular, the all-inorganic metal halide perovskite quantum dots have potential for development in future applications. Sub-2 nm CsPbX₃ (X = Cl, Br, and I) perovskite quantum dots were successfully fabricated by a MOF-confined strategy with a facile and simple route. The highly uniform microporous structure of MOF effectively restricted the CsPbX₃ quantum dots aggregation in a synthetic process and endowed the obtained sub-2 nm CsPbX₃ quantum dots with well-dispersed and excellent stability in ambient air without a capping agent. The photoluminescence emission spectra and lifetimes were not decayed after 60 days. The CsPbX₃ quantum dots maintained size distribution stability in the air without any treatment. Because of the quantum confinement effect of CsPbX₃ quantum dots, the absorption and photoluminescence (PL) emission peak were blue shifted to shorter wavelengths compare with bulk materials. Furthermore, this synthetic strategy provides a novel method in fabricating ultra-small photoluminescence quantum dots.

Compositional Engineering of Mixed-Cation Lead Mixed-Halide Perovskites for High-Performance Photodetectors

The mixed-cation lead mixed-halide perovskites can combine the advantages of the constituents while avoiding their drawbacks, and they have been widely explored in solar cells. However, there are only few research studies on the mixed-cation lead mixed-halide perovskites for photodetectors. In this work, we fabricate photodetectors based on FA_(1-x)Cs_xPb(Br_yI_(1-y))₃ perovskite and reveal the effect of the chemical composition on the crystal phase stability and device performance of mixed-cation mixed-halide perovskite photodetectors. The FA_0.7Cs_0.3Pb(I_0.8Br_0.2)₃ photodetectors exhibit high specific detectivity, high responsivity, and excellent stability in ambient conditions. Especially, the flexible perovskite photodetectors fabricated on poly(ethylene terephthalate) substrates exhibit extremely high specific detectivity of 2.8 × 10¹³ Jones, which is the highest value to date for flexible perovskite photodetectors, as well as excellent stability and outstanding flexibility. These results indicate that mixed-cation mixed-halide perovskites are promising to be applied in high-performance photodetectors and other flexible optoelectronic devices.