High-Yield Functional Molecular Electronic Devices

Toward Practical Single-Molecule/Atom Switches

Electronic switches have been considered to be one of the most important components of contemporary electronic circuits for processing and storing digital information. Fabricating functional devices with building blocks of atomic/molecular switches can greatly promote the minimization of the devices and meet the requirement of high integration. This review highlights key developments in the fabrication and application of molecular switching devices. This overview offers valuable insights into the switching mechanisms under various stimuli, emphasizing structural and energy state changes in the core molecules. Beyond the molecular switches, typical individual metal atomic switches are further introduced. A critical discussion of the main challenges for realizing and developing practical molecular/atomic switches is provided. These analyses and summaries will contribute to a comprehensive understanding of the switch mechanisms, providing guidance for the rational design of functional nanoswitch devices toward practical applications.

Marcus Theory and Long-Range Activationless Transport in Molecular Junctions

Intrachain transport in molecular junctions (MJs) longer than 5 nm has been modeled within the theoretical framework of Marcus theory. We show that in oligo(bisthienylbenzene)-based MJs, electronic transport involves polarons, localized on three monomers that are close to 4 nm in length. They hop and tunnel between adjacent localized sites with reorganization energies λ close to 400-600 meV and electronic coupling parameters Hab close to λ/2. As a consequence, the activation energy for intrachain transport, given by the equation ΔG* = (λ/4)(1 - 2Hab/λ)2, is close to zero, and transport along the chain is activationless, in agreement with experimental observation. On the contrary, similar calculations on conjugated oligonaphthalenefluoreneimine wires show that Hab is much less than λ/2 and predict that the activation energies for intrachain hopping between adjacent sites, close to λ/4, are ∼115 meV. This work proposes a new perspective for understanding long-range activationless transport in MJs beyond the tunneling regime.

Nanoarchitectonics of molecular self assembled monolayers by transition metal ion intercalation for enhancement of molecular junction conductivity

This research delves into the role of metal ions in enhancing the electronic properties of 5,5'-bis(mercaptomethyl)-2,2'-bipyridine (BPD) self-assembled monolayers (SAMs). It combines experimental techniques and numerical simulations to understand the impact of these ions on the structural, electronic, and transport properties of BPD SAMs. Key findings include the varied bonding preferences of metal ions and their significant role in modifying the electronic structure of BPD molecules, leading to enhanced electron delocalization and migration. The study highlights the potential of metal ions in advancing molecular electronics, particularly in the development of high-performance electronic and energy devices.

Light Emission and Conductance Fluctuations in Electrically Driven and Plasmonically Enhanced Molecular Junctions

Electrically connected and plasmonically enhanced molecular junctions combine the optical functionalities of high field confinement and enhancement (cavity function), and of high radiative efficiency (antenna function) with the electrical functionalities of molecular transport. Such combined optical and electrical probes have proven useful for the fundamental understanding of metal-molecule contacts and contribute to the development of nanoscale optoelectronic devices including ultrafast electronics and nanosensors. Here, we employ a self-assembled metal-molecule-metal junction with a nanoparticle bridge to investigate correlated fluctuations in conductance and tunneling-induced light emission at room temperature. Despite the presence of hundreds of molecules in the junction, the electrical conductance and light emission are both highly sensitive to atomic-scale fluctuations-a phenomenology reminiscent of picocavities observed in Raman scattering and of luminescence blinking from photoexcited plasmonic junctions. Discrete steps in conductance associated with fluctuating emission intensities through the multiple plasmonic modes of the junction are consistent with a finite number of randomly localized, point-like sources dominating the optoelectronic response. Contrasting with these microscopic fluctuations, the overall plasmonic and electronic functionalities of our devices feature long-term survival at room temperature and under an electrical bias of a few volts, allowing for measurements over several months.

Intermediate Intercluster Bond Orders. Electronic Communication in Au38(SR)24 Superatomic Molecules

Ligand-protected gold clusters remain potential building blocks for envisaged molecular materials. The archetypal Au38(SR)24 cluster can be viewed as a robust template for the fusion of two Au25(SR)18 - cluster units, retaining a bi-icosahedral Au23 core. Via electrochemical properties, the overall charge state can be selectively tuned, enabling the access of 14 valence electron (ve) species featuring a single intercluster bond and nearby charge from -1 to +3, achieving related species bearing 15- to 11-ve with variable intercluster bond orders. Here, we explore the characteristics of intermediate intercluster bond orders in order to provide insights into the plausible electron communication between the constituent building blocks, with Au38(SR)24, as a representative template. Our results denote a small structural variation along -1 to +3 charge states, provided by the core-protecting ligand interaction, which is enhanced towards more oxidized species. The remaining unpaired electron from intermediate intercluster bond orders of 1.5 for Au38(SR)24 1-, 1.5 for Au38(SR)24 1+, and 2.5 for Au38(SR)24 3+, holds delocalized characteristics between the building block units, favoring electron communication for conductive and cooperative cluster aggregates. Such features are relevant for the formation of molecular electronic device applications, favoring the rationalization prior to engaging in explorative synthesis of larger ligand-protected cluster aggregates.

Monolayer Organic Crystals for Ultrahigh Performance Molecular Diodes

Molecular diodes are of considerable interest for the increasing technical demands of device miniaturization. However, the molecular diode performance remains contact-limited, which represents a major challenge for the advancement of rectification ratio and conductance. Here, it is demonstrated that high-quality ultrathin organic semiconductors can be grown on several classes of metal substrates via solution-shearing epitaxy, with a well-controlled number of layers and monolayer single crystal over 1 mm. The crystals are atomically smooth and pinhole-free, providing a native interface for high-performance monolayer molecular diodes. As a result, the monolayer molecular diodes show record-high rectification ratio up to 5 × 108 , ideality factor close to unity, aggressive unit conductance over 103 S cm-2 , ultrahigh breakdown electric field, excellent electrical stability, and well-defined contact interface. Large-area monolayer molecular diode arrays with 100% yield and excellent uniformity in the diode metrics are further fabricated. These results suggest that monolayer molecular crystals have great potential to build reliable, high-performance molecular diodes and deeply understand their intrinsic electronic behavior.

Stripe-Like hBN Monolayer Template for Self-Assembly and Alignment of Pentacene Molecules

Metallic surfaces with unidirectional anisotropy are often used to guide the self-assembly of organic molecules along a particular direction. Such supports thus offer an avenue for the fabrication of hybrid organic-metal interfaces with tailored morphology and precise elemental composition. Nonetheless, such control often comes at the expense of detrimental interfacial interactions that might quench the pristine properties of molecules. Here, hexagonal boron nitride grown on Ir(100) is introduced as a robust platform with several coexisting 1D stripe-like moiré superstructures that effectively guide unidirectional self-assemblies of pentacene molecules, concomitantly preserving their pristine electronic properties. In particular, highly-aligned longitudinal arrays of equally-oriented molecules are formed along two perpendicular directions, as demonstrated by comprehensive scanning tunneling microscopy and photoemission characterization performed at the local and non-local scale, respectively. The functionality of the template is demonstrated by photoemission tomography, a surface-averaging technique requiring a high degree of orientational order of the probed molecules. The successful identification of pentacene's pristine frontier orbitals underlines that the template induces excellent long-range molecular ordering via weak interactions, preventing charge transfer.

Deciphering I-V characteristics in molecular electronics with the benefit of an analytical model

We share our perspective that a simple analytical model for electron tunneling in molecular junctions can greatly aid quantitative analysis of experimental data in molecular electronics. In particular, the single-level model (SLM), derived from first principles, provides a precise prediction for the current-voltage (I-V) characteristics in terms of key electronic structure parameters, which in turn depend on the molecular and contact architecture. SLM analysis thus facilitates understanding of structure-property relationships and provides metrics that can be compared across different types of tunnel junctions, as we illustrate with several examples.

Supramolecular Memristor Based on Bistable [2]Catenanes: Toward High-Density and Non-Volatile Memory Devices

The ever-increasing demand for data storage and neuromorphic computing calls for innovative, high-density solutions, such as resistive random-access memory (RRAM). However, the integration of resistive switching and rectification at the nanoscale remains a formidable challenge. In this study, we introduce a bistable [2]catenane-based supramolecular junction that simultaneously functions as a resistive switch and a diode. All supramolecular junctions are highly stable and reproducible over thousands of resistive switching cycles, because the nano-confinement of two mechanically interlocked rings can stabilize the radical states of pyridinium moieties under ambient conditions. The successful realization of supramolecular junctions in functionality with a thickness of approximately 2 nm presents a promising avenue for the development of molecule-scale based RRAM for a better solution to high density and energy efficiency.

Effects of Inorganic Substitutions and Different Metal Electrode Materials on Electronic Transport Properties of Organic Molecular Devices

Incorporating inorganic components into organic molecular devices offers one novel alternative to address challenges existing in the fabrication and integration of nanoscale devices. In this study, using a theoretical method of density functional theory combined with the nonequilibrium Green's function, a series of benzene-based molecules with group III and V substitutions, including borazine molecule and X_nB_3-nN₃H₆ (X = Al or Ga, n = 1-3) molecules/clusters, are constructed and investigated. An analysis of electronic structures reveals that the introduction of inorganic components effectively reduces the energy gap between the highest occupied molecular orbital and the lowest unoccupied molecular orbital, albeit at the cost of reduced aromaticity in these molecules/clusters. Simulated electronic transport characteristics demonstrate that X_nB_3-nN₃H₆ molecules/clusters coupled between metal electrodes exhibit lower conductance compared to prototypical benzene molecule. Additionally, the choice of metal electrode materials significantly impacts the electronic transport properties, with platinum electrode devices displaying distinct behavior compared to silver, copper, and gold electrode devices. This distinction arises from the amount of transferred charge, which modulates the alignment between molecular orbitals and the Fermi level of the metal electrodes by shifting the molecular orbitals in energy. These findings provide valuable theoretical insights for the future design of molecular devices incorporating inorganic substitutions.

Molecular Electronics: Creating and Bridging Molecular Junctions and Promoting Its Commercialization

Molecular electronics is driven by the dream of expanding Moore's law to the molecular level for next-generation electronics through incorporating individual or ensemble molecules into electronic circuits. For nearly 50 years, numerous efforts have been made to explore the intrinsic properties of molecules and develop diverse fascinating molecular electronic devices with the desired functionalities. The flourishing of molecular electronics is inseparable from the development of various elegant methodologies for creating nanogap electrodes and bridging the nanogap with molecules. This review first focuses on the techniques for making lateral and vertical nanogap electrodes by breaking, narrowing, and fixed modes, and highlights their capabilities, applications, merits, and shortcomings. After summarizing the approaches of growing single molecules or molecular layers on the electrodes, the methods of constructing a complete molecular circuit are comprehensively grouped into three categories: 1) directly bridging one-molecule-electrode component with another electrode, 2) physically bridging two-molecule-electrode components, and 3) chemically bridging two-molecule-electrode components. Finally, the current state of molecular circuit integration and commercialization is discussed and perspectives are provided, hoping to encourage the community to accelerate the realization of fully scalable molecular electronics for a new era of integrated microsystems and applications.

Laser Direct Writing of Sol-Gel-Derived Vacancy-Rich Functional Oxide Semiconductors

Fabricating micro/nanostructures of oxide semiconductors with oxygen vacancies (OVs) is crucial for advancing miniaturized functional devices. However, traditional methods for the synthesis of semiconductor metal oxides (SMOs) with OVs usually involve thermal treatment, such as annealing or sintering, under anaerobic conditions. Herein, a multiphoton-induced femtosecond laser (fs) additive manufacturing method is reported for directly writing micropatterns with high resolution (∼1 μm) and abundant OVs in an atmospheric environment at room temperature (25 °C). The interdigitated functional devices fabricated by these micropatterns exhibit both photosensitivity and gas sensitivity. Additionally, this method can be applied to flexible and rigid substrates. The proposed method realizes the high-precision fabrication of SMOs with OVs, enabling the future heterogeneous integration of oxide semiconductors on various substrates, especially flexible substrates, for various device applications, such as soft and wearable electronics/optoelectronics.

Stable Organic Radical for Enhancing Metal-Monolayer-Semiconductor Junction Performance

The preparation of monolayers based on an organic radical and its diamagnetic counterpart has been pursued on hydrogen-terminated silicon surfaces. The functional monolayers have been investigated as solid-state metal/monolayer/semiconductor (MmS) junctions showing a characteristic diode behavior which is tuned by the electronic characteristics of the organic molecule. The eutectic gallium-indium liquid metal is used as a top electrode to perform the transport measurements and the results clearly indicate that the SOMO-SUMO molecular orbitals impact the device performance. The junction incorporating the radical shows an almost two orders of magnitude higher rectification ratio (R(|J_1V/J_-1V|) = 10^4.04) in comparison with the nonradical one (R(|J_1V/J_-1V|) = 10^2.30). The high stability of the fabricated MmS allows the system to be interrogated under irradiation, evidencing that at the wavelength where the photon energy is close to the band gap of the radical there is a clear enhancement of the photoresponse. This is translated into an increase of the photosensitivity (S_ph) value from 68.7 to 269.0 mA/W for the nonradical and radical based systems, respectively.

Probing the Effect of the Density of Active Molecules in Large-Area Molecular Junctions

The effect of the density of active molecules in molecular junctions (MJs) has been investigated by using a host/guest strategy. Mixed layers consisting of oligothiophene (BTB) encapsulated by β-cyclodextrin (BTB@β-CD) were generated. Cyclodextrins were then removed, and the pinholes generated were filled with BTB to obtain BTB@BTB films. MJs based on mixed BTB@β-CD and BTB@BTB layers, as well as single-component BTB MJs, were compared. The variation of ln J vs thickness is similar for all systems while the J_o of BTB@β-CD MJs is 20 times lower than that of BTB MJs. After β-cyclodextrin has been removed, and the pinholes filled, J_o increases and reaches the same value as for the BTB MJs, showing that the conductance scales with the number of active molecules. This strategy provides a unique method for investigating molecular interactions in direct tunneling MJs as well as the possibility of fabricating new functionalized MJs based on mixed layers.

Molecular Van Der Waals Heterojunction Photodiodes Enabling Dipole-Induced Polarity Switching

Solid-state devices capable of controlling light-responsive charge transport at the molecular scale are essential for developing molecular optoelectronic technology. Here, a solid-state molecular photodiode device constructed by forming van der Waals (vdW) heterojunctions between standard molecular self-assembled monolayers and two-dimensional semiconductors such as WSe₂ is reported. In particular, two non-functionalized molecular species used herein (i.e., tridecafluoro-1-octanethiol and 1-octanethiol) enable bidirectional modulation of the interface band alignment with WSe₂ , depending on their dipole orientations. This dipole-induced band modulation at the vdW heterointerface leads to the opposite change of both photoswitching polarity and rectifying characteristics. Furthermore, compared with other molecular or 2D photodiodes at a similar scale, these heterojunction devices exhibit significantly enhanced photo-responsive performances in terms of photocurrent magnitude, open-circuit potential, and switching speed. This study proposes a novel concept of the solid-state molecular optoelectronic device with controlled functions and enhanced performances.

Advances of Various Heterogeneous Structure Types in Molecular Junction Systems and Their Charge Transport Properties

Molecular electronics that can produce functional electronic circuits using a single molecule or molecular ensemble remains an attractive research field because it not only represents an essential step toward realizing ultimate electronic device scaling but may also expand our understanding of the intrinsic quantum transports at the molecular level. Recently, in order to overcome the difficulties inherent in the conventional approach to studying molecular electronics and developing functional device applications, this field has attempted to diversify the electrical characteristics and device architectures using various types of heterogeneous structures in molecular junctions. This review summarizes recent efforts devoted to functional devices with molecular heterostructures. Diverse molecules and materials can be combined and incorporated in such two- and three-terminal heterojunction structures, to achieve desirable electronic functionalities. The heterojunction structures, charge transport mechanisms, and possible strategies for implementing electronic functions using various hetero unit materials are presented sequentially. In addition, the applicability and merits of molecular heterojunction structures, as well as the anticipated challenges associated with their implementation in device applications are discussed and summarized. This review will contribute to a deeper understanding of charge transport through molecular heterojunction, and it may pave the way toward desirable electronic functionalities in molecular electronics applications.

AFM Manipulation of EGaIn Microdroplets to Generate Controlled, On-Demand Contacts on Molecular Self-Assembled Monolayers

Liquid metal droplets, such as eutectic gallium-indium (EGaIn), are important in many research areas, such as soft electronics, catalysis, and energy storage. Droplet contact on solid surfaces is typically achieved without control over the applied force and without optimizing the wetting properties in different environments (e.g., in air or liquid), resulting in poorly defined contact areas. In this work, we demonstrate the direct manipulation of EGaIn microdroplets using an atomic force microscope (AFM) to generate repeated, on-demand making and breaking of contact on self-assembled monolayers (SAMs) of alkanethiols. The nanoscale positional control and feedback loop in an AFM allow us to control the contact force at the nanonewton level and, consequently, tune the droplet contact areas at the micrometer length scale in both air and ethanol. When submerged in ethanol, the droplets are highly nonwetting, resulting in hysteresis-free contact forces and minimal adhesion; as a result, we are able to create reproducible geometric contact areas of 0.8-4.5 μm² with the alkanethiolate SAMs in ethanol. In contrast, there is a larger hysteresis in the contact forces and larger adhesion for the same EGaIn droplet in air, which reduced the control over the contact area (4-12 μm²). We demonstrate the usefulness of the technique and of the gained insights in EGaIn contact mechanics by making well-defined molecular tunneling junctions based on alkanethiolate SAMs with small geometric contact areas of between 4 and 12 μm² in air, 1 to 2 orders of magnitude smaller than previously achieved.

Plasmonic phenomena in molecular junctions: principles and applications

Molecular junctions are building blocks for constructing future nanoelectronic devices that enable the investigation of a broad range of electronic transport properties within nanoscale regions. Crossing both the nanoscopic and mesoscopic length scales, plasmonics lies at the intersection of the macroscopic photonics and nanoelectronics, owing to their capability of confining light to dimensions far below the diffraction limit. Research activities on plasmonic phenomena in molecular electronics started around 2010, and feedback between plasmons and molecular junctions has increased over the past years. These efforts can provide new insights into the near-field interaction and the corresponding tunability in properties, as well as resultant plasmon-based molecular devices. This Review presents the latest advancements of plasmonic resonances in molecular junctions and details the progress in plasmon excitation and plasmon coupling. We also highlight emerging experimental approaches to unravel the mechanisms behind the various types of light-matter interactions at molecular length scales, where quantum effects come into play. Finally, we discuss the potential of these plasmonic-electronic hybrid systems across various future applications, including sensing, photocatalysis, molecular trapping and active control of molecular switches.

Modulated Structure and Rectification Properties of a Molecular Junction by a Mixed Self-Assembled Monolayer

The organization of the self-assembled monolayer (SAM) determines its electronic structure and so governs the charge transport process and device performance when adopted into a molecular device. We report a systematic study on the supramolecular structure and rectification performance of the ferrocene (11-ferrocenyl-1-undecanethiol, FUT) based SAM modulated by mixed SAM with inert 1-undecanethiol (C₁₁SH) as diluent. We compared mixed SAMs by two different post assembly strategies, i.e., post assembly of C₁₁SH on FUT SAM and post assembly of FUT on C₁₁SH SAM. The organization and structure of FUT in the mixed SAM were extensively studied by cyclic voltammetry (CV) using the Laviron model. Rectification properties of the mixed SAM obtained using eutectic indium gallium (EGaIn) as the top electrode revealed that the magnitude and stability of the rectification ratio (RR) strongly correlated to not only the amount but also the phase structure and orientation of the FUT in the monolayer, resulting in a tunable RR and increased stability. The mixed monolayer achieved an increased performance relative to pure FUT by post assembling FUT on C₁₁SH SAM, which formed an optimally dense and well-packed monolayer with the FUT head resting on the top of the alkane SAM.

Molecular ensemble junctions with inter-molecular quantum interference

We report of a high yield method to form nanopore molecular ensembles junctions containing ~40,000 molecules, in which the semimetal bismuth (Bi) is a top contact. Conductance histograms of these junctions are double-peaked (bi-modal), a behavior that is typical for single molecule junctions but not expected for junctions with thousands of molecules. This unique observation is shown to result from a new form of quantum interference that is inter-molecular in nature, which occurs in these junctions since the very long coherence length of the electrons in Bi enables them to probe large ensembles of molecules while tunneling through the junctions. Under such conditions, each molecule within the ensembles becomes an interference path that modifies via its tunneling phase the electronic structure of the entire junction. This new form of quantum interference holds a great promise for robust novel conductance effects in practical molecular junctions.

Quantum interference effect in the conductance of single molecule junctions has been attracting intensive interest in recent years. Here, Li and Selzer show the presence of intermolecular quantum interference over 40,000 molecules in a molecular ensemble junction with bismuth as the top electrode.

High-Temperature Electronic Transport Properties of PEDOT:PSS Top-Contact Molecular Junctions with Oligophenylene Dithiols

In this study, we investigated the high-temperature electronic transport behavior of spin-coated PEDOT:PSS top-contact molecular ensemble junctions based on self-assembled monolayers (SAMs) of oligophenylene dithiols. We observed irreversible temperature-dependent charge transport at the high-temperature regime over 320 K. The effective contact resistance and normalized resistance decreased with increasing temperature (320 to 400 K), whereas the tunneling attenuation factor was nearly constant irrespective of temperature change. These findings demonstrate that the high-temperature transport properties are not dominated by the integrity of SAMs in molecular junctions, but rather the PEDOT:PSS/SAMs contact. Transition voltage spectroscopy measurements indicated that the contact barrier height of the PEDOT:PSS/SAMs is lowered at elevated temperatures, which gives rise to a decrease in the contact resistance and normalized resistance. The high-temperature charge transport through these junctions is also related to an increase in the grain area of PEDOT cores after thermal treatment. Moreover, it was found that there was no significant change in either the current density or normalized resistance of the annealed junctions after 60 days of storage in ambient conditions.

Demonstration of Molecular Tunneling Junctions Based on Vertically Stacked Graphene Heterostructures

We demonstrate the fabrication and complete characterization of vertical molecular tunneling junctions based on graphene heterostructures, which incorporate a control series of arylalkane molecules acting as charge transport barriers. Raman spectroscopy and atomic force microscopy were employed to identify the formation of the molecular monolayer via an electrophilic diazonium reaction on a pre-patterned bottom graphene electrode. The top graphene electrode was transferred to the deposited molecular layer to form a stable electrical connection without filamentary damage. Then, we showed proof of intrinsic charge carrier transport through the arylalkane molecule in the vertical tunneling junctions by carrying out multiprobe approaches combining complementary transport characterization methods, which included length- and temperature-dependent charge transport measurements and transition voltage spectroscopy. Interpretation of all the electrical characterizations was conducted on the basis of intact statistical analysis using a total of 294 fabricated devices. Our results and analysis can provide an objective criterion to validate molecular electronic devices fabricated with graphene electrodes and establish statistically representative junction properties. Since many of the experimental test beds used to examine molecular junctions have generated large variation in the measured data, such a statistical approach is advantageous to identify the meaningful parameters with the data population and describe how the results can be used to characterize the graphene-based molecular junctions.

Analysis of molecular ligand functionalization process in nano-molecular electronic devices containing densely packed nano-particle functionalization shells

Molecular electronic devices based on few and single-molecules have the advantage that the electronic signature of the device is directly dependent on the electronic structure of the molecules as well as of the electrode-molecule junction. In this work, we use a two-step approach to synthesise functionalized nanomolecular electronic devices (nanoMoED). In first step we apply an organic solvent-based gold nanoparticle (AuNP) synthesis method to form either a 1-dodecanethiol or a mixed 1-dodecanethiol/ω-tetraphenyl ether substituted 1-dodecanethiol ligand shell. The functionalization of these AuNPs is tuned in a second step by a ligand functionalization process where biphenyldithiol (BPDT) molecules are introduced as bridging ligands into the shell of the AuNPs. From subsequent structural analysis and electrical measurements, we could observe a successful molecular functionalization in nanoMoED devices as well as we could deduce that differences in electrical properties between two different device types are related to the differences in the molecular functionalization process for the two different AuNPs synthesized in first step. The same devices yielded successful NO₂gas sensing. This opens the pathway for a simplified synthesis/fabrication of molecular electronic devices with application potential.

Improving Orientation, Packing Density, and Molecular Arrangement in Self-Assembled Monolayers of Bianchoring Ferrocene-Triazole Derivatives by "Click" Chemistry

This work describes the self-assembled monolayers (SAMs) of two ferrocene derivatives with two anchoring groups (at the bottom and at the top of the SAM) deposited on ultraflat template-stripped gold substrates by cyclic voltammetry and analyzed by complementary surface characterization techniques. The SAM of each molecule is deposited by three different protocols: direct deposition (one step), click reaction on the surface (two steps), and reverse click reaction on the surface (two steps). The SAM structure is well studied to determine the SAM orientation, SAM arrangement, and ferrocene position within the SAM. Electron transfer kinetics have also been studied, which agree with the quality of each SAM. With the help of two anchoring groups and click-chemistry active functional groups, we have shown that the two molecules can be deposited by controlling the position of ferrocene at either end. We further investigated the involvement of the triazole five-membered ring in the electron transfer mechanism. We have found that a carbon spacer between ferrocene and triazole improves the SAM packing. This study enhances the understanding of tethering thiol and thiol acetate anchoring groups on gold by a controlled orientation, which may help in the development of functional molecular devices requiring two anchoring groups.

Multi-Component Collaborative Step-by-Step Coloring Strategy to Achieve High-Performance Light-Responsive Color-Switching

Light-responsive color-switching materials (LCMs) are long-lasting hot fields. However, non-ideal comprehensive performance (such as color contrast and retention time cannot be combined, unsatisfactory repeatability, and non-automated coloring mode) significantly hinder their development toward high-end products. Herein, the development of LCMs that exhibit long retention time, good color contrast, repeatability, and the property of automatic coloring is reported. The realization of this goal stems from the adoption of a bio-inspired multi-component collaborative step-by-step coloring strategy. Under this strategy, a conventional one-step photochromic process is divided into a "light+heat" controlled multi-step process for the fabrication of the desired LCMs. The obtained LCMs can effectively resist the long-troubled ambient-light interference and avoid its inherent yellow background, thereby achieving the longest retention time and good repeatability. Multiple colors are generated and ultra-fast imaging compatible with the laser-printing technology is also realized. The application potential of the materials in short-term reusable identity cards, absorptive readers, billboards, and shelf labels is demonstrated. The results reported herein can potentially help in developing and designing various high-performance, switchable materials that can be used for the production of high-end products.

ABO3 multiferroic perovskite materials for memristive memory and neuromorphic computing

The unique electron spin, transfer, polarization and magnetoelectric coupling characteristics of ABO₃ multiferroic perovskite materials make them promising candidates for application in multifunctional nanoelectronic devices. Reversible ferroelectric polarization, controllable defect concentration and domain wall movement originated from the ABO₃ multiferroic perovskite materials promotes its memristive effect, which further highlights data storage, information processing and neuromorphic computing in diverse artificial intelligence applications. In particular, ion doping, electrode selection, and interface modulation have been demonstrated in ABO₃-based memristive devices for ultrahigh data storage, ultrafast information processing, and efficient neuromorphic computing. These approaches presented today including controlling the dopant in the active layer, altering the oxygen vacancy distribution, modulating the diffusion depth of ions, and constructing the interface-dependent band structure were believed to be efficient methods for obtaining unique resistive switching (RS) behavior for various applications. In this review, internal physical dynamics, preparation technologies, and modulation methods are systemically examined as well as the progress, challenges, and possible solutions are proposed for next generation emerging ABO₃-based memristive application in artificial intelligence.

Reorganization Energy upon Controlled Intermolecular Charge-Transfer Reactions in Monolithically Integrated Nanodevices

Intermolecular electron-transfer reactions are key processes in physics, chemistry, and biology. The electron-transfer rates depend primarily on the system reorganization energy, that is, the energetic cost to rearrange each reactant and its surrounding environment when a charge is transferred. Despite the evident impact of electron-transfer reactions on charge-carrier hopping, well-controlled electronic transport measurements using monolithically integrated electrochemical devices have not successfully measured the reorganization energies to this date. Here, it is shown that self-rolling nanomembrane devices with strain-engineered mechanical properties, on-a-chip monolithic integration, and multi-environment operation features can overcome this challenge. The ongoing advances in nanomembrane-origami technology allow to manufacture the nCap, a nanocapacitor platform, to perform molecular-level charge transport characterization. Thereby, employing nCap, the copper-phthalocyanine (CuPc) reorganization energy is probed, ≈0.93 eV, from temperature-dependent measurements of CuPc nanometer-thick films. Supporting the experimental findings, density functional theory calculations provide the atomistic picture of the measured CuPc charge-transfer reaction. The experimental strategy demonstrated here is a consistent route towards determining the reorganization energy of a system formed by molecules monolithically integrated into electrochemical nanodevices.

Quantum Tunneling Induced Optical Rectification and Plasmon-Enhanced Photocurrent in Nanocavity Molecular Junctions

Molecular junctions offer the opportunity for downscaling optoelectronic devices. Separating two electrodes with a single layer of molecules accesses the quantum-tunneling regime at low voltages (<1 V), where tunneling currents become highly sensitive to local nanometer-scale geometric features of the electrodes. These features generate asymmetries in the electrical response of the junction which combine with the incident oscillating optical fields to produce optical rectification and photocurrents. Maximizing photocurrents requires accurate control of the overall junction geometry and a large confined optical field in the optimal location. Plasmonic nanostructures such as metallic nanoparticles are prime candidates for this application, because their size and shape dictate a consistent junction geometry while strongly enhancing the optical field from incident light. Here we demonstrate a robust lithography-free molecular optoelectronic device geometry, where a metallic nanoparticle on a self-assembled molecular monolayer is sandwiched between planar bottom and semitransparent top electrodes, to create molecular junctions with reproducible morphology and electrical response. The well-defined geometry enables predictable and intense plasmonic localization, which we show creates optical-frequency voltages ∼ 30 mV in the molecular junction from 100 μW incident light, generating photocurrent by optical rectification (>10 μA/W) from only a few hundred molecules. Quantitative agreement is thus obtained between DC- and optical-frequency quantum-tunneling currents, predicted by a simple analytic equation. By measuring the degree of junction asymmetry for different molecular monolayers, we find that molecules with a large DC rectification ratio also boost zero-bias electrical asymmetry, making them good candidates for sensing and energy harvesting applications in combination with plasmonic nanomaterials.

Energy-Level Alignment and Orbital-Selective Femtosecond Charge Transfer Dynamics of Redox-Active Molecules on Au, Ag, and Pt Metal Surfaces

Charge transfer (CT) dynamics across metal-molecule interfaces has important implications for performance and function of molecular electronic devices. CT times, on the order of femtoseconds, can be precisely measured using synchrotron-based core-hole clock (CHC) spectroscopy, but little is known about the impact on CT times of the metal work function and the bond dipole created by metals and the anchoring group. To address this, here we measure CT dynamics across self-assembled monolayers bound by thiolate anchoring groups to Ag, Au, and Pt. The molecules have a terminal ferrocene (Fc) group connected by varying numbers of methylene units to a diphenylacetylene (DPA) wire. CT times measured using CHC with resonant photoemission spectroscopy (RPES) show that conjugated DPA wires conduct electricity faster than aliphatic carbon wires of a similar length. Shorter methylene connectors exhibit increased conjugation between Fc and DPA, facilitating CT by providing greater orbital mixing. We find nearly 10-fold increase in the CT time on Pt compared to Ag due to a larger bond dipole generated by partial electron transfer from the metal-sulfur bond to the carbon-sulfur bond, which creates an electrostatic field that impedes CT from the molecules. By fitting the RPES signal, we distinguish electrons coming from the Fe center and from cyclopentadienyl (Cp) rings. The latter shows faster CT rates because of the delocalized Cp orbitals. Our study demonstrates the fine tuning of CT rates across junctions by careful engineering of several parts of the molecule and the molecule-metal interface.

Recent Advances of Nanospheres Lithography in Organic Electronics

Nanospheres lithography (NSL) is an economical technique, which makes use of highly monodispersed nanospheres such as deposition or etch masks for generating patterns with nanoscale features. Embedding nanostructures into organic electronic devices can endow them with unique capabilities and enhanced performance, which have greatly advanced the development of organic electronics. In this review, a brief summary of the methods for the preparation of monodispersed nanospheres is presented. Afterward, the authors highlight the recent advances of a wide variety of applications of nanospheres lithography in organic electronic devices. Finally, the challenges in this field are pointed out, and the future development of this field is discussed.

A single atom change turns insulating saturated wires into molecular conductors

We present an efficient strategy to modulate tunnelling in molecular junctions by changing the tunnelling decay coefficient, β, by terminal-atom substitution which avoids altering the molecular backbone. By varying X = H, F, Cl, Br, I in junctions with S(CH₂)_(10-18)X, current densities (J) increase >4 orders of magnitude, creating molecular conductors via reduction of β from 0.75 to 0.25 Å⁻¹. Impedance measurements show tripled dielectric constants (ε_r) with X = I, reduced HOMO-LUMO gaps and tunnelling-barrier heights, and 5-times reduced contact resistance. These effects alone cannot explain the large change in β. Density-functional theory shows highly localized, X-dependent potential drops at the S(CH₂)_nX//electrode interface that modifies the tunnelling barrier shape. Commonly-used tunnelling models neglect localized potential drops and changes in ε_r. Here, we demonstrate experimentally that \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\beta \propto 1/\sqrt{{\varepsilon }_{r}}$$\end{document}β∝1/εr, suggesting highly-polarizable terminal-atoms act as charge traps and highlighting the need for new charge transport models that account for dielectric effects in molecular tunnelling junctions.

In molecular junctions, where a molecule is placed between two electrodes, the current passed decays exponentially as a function of length. Here, Chen et al. show that this exponentially attenuation can be controlled by changing a single atom at the end of the molecular wire.

Evaluation of Carbon Based Molecular Junctions as Practical Photosensors

Molecular junctions with partially transparent top contacts permit monitoring photocurrents as probes of transport mechanism and potentially could act as photosensors with characteristics determined by the molecular layer inside the device. Previously reported molecular junctions containing nitroazobenzene (NAB) oligomers and oligomers of two different aromatic molecules in bilayers were evaluated for sensitivity, dark signal, responsivity, and limits of detection, in order to determine the device parameters which have the largest effects on photodetection performance. The long-range transport of photogenerated charge carriers permits the use of molecular layers thick enough to absorb a large fraction of the light incident on the layer. Thick layers also reduce the dark current and its associated noise, thus improving the limit of detection to a few nanowatts on a detector area of 0.00125 cm². Since the photocurrents have much lower activation energy than dark currents do, lowering the detector temperature significantly improves the limit of detection, although the present experiments were limited by environmental and instrumentation noise rather than detector noise. The highest specific detectivity (D*) for the current molecular devices was 3 × 10⁷ cm s^1/2 /W (∼10⁹, if only shot noise is considered) at 407 nm in a carbon/NAB/carbon junction with a molecular layer thickness of 28 nm. Although this is in the low end of the 10⁶-10¹² range for commonly used photodetectors, improvements in device design based on the current results should increase D* by 3-4 orders of magnitude, while preserving the wavelength selectivity and tunability associated with molecular absorbers. In addition, operation outside the 300-1000 nm range of silicon detectors and very low dark currents may be possible with molecular junctions.

Hybrid Approach to Fabricate Uniform and Active Molecular Junctions

Molecules can serve as ultimate building blocks for extreme nanoscale devices. This requires their precise integration into functional heterojunctions, most commonly in the form of metal-molecule-metal architectures. Structural damage and nonuniformities caused by current fabrication techniques, however, limit their effective incorporation. Here, we present a hybrid fabrication approach enabling uniform and active molecular junctions. A template-stripping technique is developed to form electrodes with sub-nanometer smooth surfaces. Combined with dielectrophoretic trapping of colloidal nanorods, uniform sub-5 nm junctions are achieved. Uniquely, in our design, the top contact is mechanically free to move under an applied stimulus. Using this, we investigate the electromechanical tuning of the junction and its tunneling conduction. Here, the molecules help control sub-nanometer mechanical modulation, which is conventionally challenging due to instabilities caused by surface adhesive forces. Our versatile approach provides a platform to develop and study active molecular junctions for emerging applications in electronics, plasmonics, and electromechanical devices.

Quantum interference enhances rectification behavior of molecular devices

A theoretical and computational study of the effect of quantum interference on the rectification behavior of unimolecular devices.

Femtosecond Charge Transfer Dynamics in Monomolecular Films in the Context of Molecular Electronics

A key issue of molecular electronics (ME) is the correlation between the molecular structure and the charge transport properties of the molecular framework. Accordingly, a variety of model and potentially useful molecular systems are designed, to prove a particular function or correlation or to build a prototype device. These studies usually involve the measurements of the static electric conductance properties of individual molecules and their assembles on solid supports. At the same time, information about the dynamics of the charge transport (CT) and transfer in such systems, complementary in the context of ME and of a scientific value on its own, is quite scarce. Among other means, this drawback can be resolved by resonant Auger electron spectroscopy (RAES) in combination with core hole clock (CHC) approach, as described in this Account. The RAES-CHC scheme was applied to a variety of aliphatic and aromatic self-assembled monolayers (SAMs), adsorbed on Au(111) over the thiolate and selenolate docking groups. Electron transfer (ET) from a suitable terminal tail group to the substrate, across the molecular framework, was monitored, triggered by resonant excitation of this group (nitrile in most cases) by narrow-band X-ray radiation. This resulted in the quantitative data for the characteristic ET time, τ_ET, in the femtosecond domain, with the time window ranging from ∼1 fs to ∼120 fs. The derived τ_ET exhibit an exponential dependence on the molecular length, mimicking the behavior of the static conductance and suggesting a common physical basis behind the static CT and ET dynamics. The dynamic decay factors, β_ET, for the alkyl, oligophenyl, and acene molecular "wires" correlate well with the analogous parameters for the static CT. Both τ_ET and β_ET values exhibit a distinct dependence on the character of the involved molecular orbital (MO), demonstrating that the efficiency and rate of the CT in molecular assemblies can be controlled by resonant injection of the charge carriers into specific MOs. This dependence as well as a lack of correlation between the molecular tilt and τ_ET represent strong arguments in favor of the generally accepted model of CT across the molecular framework ("through-bond") in contrast to "through-space" tunneling. Comparison of the SAMs with thiolate and selenolate docking groups suggests that the use of selenolate instead of thiolate does not give any gain in terms of ET dynamics or molecular conductance. Whereas a certain difference in the efficiency of the electronic coupling of thiolate and selenolate to the substrate cannot be completely excluded, this difference is certainly too small to affect the performance of the entire molecule to a noticeable extent. The efficient electronic coupling of the thiolate docking group to the substrate was verified and the decoupling of the electronic subsystems of the substrate and π-conjugated segment by introduction of methylene group into the backbone was demonstrated. No correlation between the molecular dipole or fluorine substitution pattern (at the side positions) and the ET efficiency was recorded. Several representative examples for the resonantly addressable tail groups are given, and perspectives for future research in the context of ET dynamics in molecular assemblies are discussed.

Functional Redox-Active Molecular Tunnel Junctions

Redox-active molecular junctions have attracted considerable attention because redox-active molecules provide accessible energy levels enabling electronic function at the molecular length scales, such as, rectification, conductance switching, or molecular transistors. Unlike charge transfer in wet electrochemical environments, it is still challenging to understand how redox-processes proceed in solid-state molecular junctions which lack counterions and solvent molecules to stabilize the charge on the molecules. In this minireview, we first introduce molecular junctions based on redox-active molecules and discuss their properties from both a chemistry and nanoelectronics point of view, and then discuss briefly the mechanisms of charge transport in solid-state redox-junctions followed by examples where redox-molecules generate new electronic function. We conclude with challenges that need to be addressed and interesting future directions from a chemical engineering and molecular design perspectives.

Photoswitching Molecular Junctions: Platforms and Electrical Properties

Remarkable advances in technology have enabled the manipulation of individual molecules and the creation of molecular electronic devices utilizing single and ensemble molecules. Maturing the field of molecular electronics has led to the development of functional molecular devices, especially photoswitching or photochromic molecular junctions, which switch electronic properties under external light irradiation. This review introduces and summarizes the platforms for investigating the charge transport in single and ensemble photoswitching molecular junctions as well as the electronic properties of diverse photoswitching molecules such as diarylethene, azobenzene, dihydropyrene, and spiropyran. Furthermore, the article discusses the remaining challenges and the direction for moving forward in this area for future photoswitching molecular devices.

Large Increase in the Dielectric Constant and Partial Loss of Coherence Increases Tunneling Rates across Molecular Wires

Although the dielectric behavior of monolayers is important in a large range of applications, its role in charge transport studies involving molecular junctions is largely ignored. This paper describes a large increase in the relative static dielectric constant (ε_r) by simply increasing the thickness of well-organized monolayers of oligoglycine and oligo(ethylene glycol) from 7 up to 14. The resulting large capacitance of 3.5-5.1 μF/cm² is thickness-independent, which is highly attractive for field-effect transistor applications. This increase of ε_r results in a linear increase of the thermal activation energy by a factor of 6, which suggests that the mechanism of charge transport gradually changes from coherent to (partially) incoherent tunneling. The comparisons of oligoglycine (which readily forms hydrogen bonds with neighboring molecules) and methyl terminated oligo(ethylene glycol) (which lacks hydrogen bond donors) monolayers, kinetic isotope effects, and relative humidity-dependent measurements all indicate the importance of strong hydrogen bonds involving ionic species and strongly bonded water in the unusual dielectric behavior and the incoherent tunneling mechanism. This partial loss of coherence of the charge carriers can explain the unusually small tunneling decay coefficients across long molecular wires, and the length-dependent increase of ε_r of monolayers opens up interesting new applications.

Electron Transfer Dynamics and Structural Effects in Benzonitrile Monolayers with Tuned Dipole Moments by Differently Positioned Fluorine Atoms

To understand the influence of the molecular dipole moment on the electron transfer (ET) dynamics across the molecular framework, two series of differently fluorinated, benzonitrile-based self-assembled monolayers (SAMs) bound to Au(111) by either thiolate or selenolate anchoring groups were investigated. Within each series, the molecular structures were the same with the exception of the positions of two fluorine atoms affecting the dipole moment of the SAM-forming molecules. The SAMs exhibited a homogeneous anchoring to the substrate, nearly upright molecular orientations, and the outer interface comprised of the terminal nitrile groups. The ET dynamics was studied by resonant Auger electron spectroscopy in the framework of the core-hole clock method. Resonance excitation of the nitrile group unequivocally ensured an ET pathway from the tail group to the substrate. As only one of the π* orbitals of this group is hybridized with the π* system of the adjacent phenyl ring, two different ET times could be determined depending on the primary excited orbital being either localized at the nitrile group or delocalized over the entire benzonitrile moiety. The latter pathway turned out to be much more efficient, with the characteristic ET times being a factor 2.5-3 shorter than those for the localized orbital. The dynamic ET properties of the analogous thiolate- and selenolate-based adsorbates were found to be nearly identical. Finally and most importantly, these properties were found to be unaffected by the different patterns of the fluorine substitution used in the present study, thus showing no influence of the molecular dipole moment.

Nanofabrication Techniques in Large-Area Molecular Electronic Devices

The societal impact of the electronics industry is enormous—not to mention how this industry impinges on the global economy. The foreseen limits of the current technology—technical, economic, and sustainability issues—open the door to the search for successor technologies. In this context, molecular electronics has emerged as a promising candidate that, at least in the short-term, will not likely replace our silicon-based electronics, but improve its performance through a nascent hybrid technology. Such technology will take advantage of both the small dimensions of the molecules and new functionalities resulting from the quantum effects that govern the properties at the molecular scale. An optimization of interface engineering and integration of molecules to form densely integrated individually addressable arrays of molecules are two crucial aspects in the molecular electronics field. These challenges should be met to establish the bridge between organic functional materials and hard electronics required for the incorporation of such hybrid technology in the market. In this review, the most advanced methods for fabricating large-area molecular electronic devices are presented, highlighting their advantages and limitations. Special emphasis is focused on bottom-up methodologies for the fabrication of well-ordered and tightly-packed monolayers onto the bottom electrode, followed by a description of the top-contact deposition methods so far used.

Electric-field-driven dual-functional molecular switches in tunnel junctions

To avoid crosstalk and suppress leakage currents in resistive random access memories (RRAMs), a resistive switch and a current rectifier (diode) are usually combined in series in a one diode-one resistor (1D-1R) RRAM. However, this complicates the design of next-generation RRAM, increases the footprint of devices and increases the operating voltage as the potential drops over two consecutive junctions¹. Here, we report a molecular tunnel junction based on molecules that provide an unprecedented dual functionality of diode and variable resistor, resulting in a molecular-scale 1D-1R RRAM with a current rectification ratio of 2.5 × 10⁴ and resistive on/off ratio of 6.7 × 10³, and a low drive voltage of 0.89 V. The switching relies on dimerization of redox units, resulting in hybridization of molecular orbitals accompanied by directional ion migration. This electric-field-driven molecular switch operating in the tunnelling regime enables a class of molecular devices where multiple electronic functions are preprogrammed inside a single molecular layer with a thickness of only 2 nm.

Surface Plasmon-Enhanced Switching Kinetics of Molecular Photochromic Films on Gold Nanohole Arrays

Diarylethene molecules are discussed as possible optical switches, which can reversibly transition between completely conjugated (closed) and nonconjugated (open) forms with different electrical conductance and optical absorbance, by exposure to UV and visible light. However, in general the opening reaction exhibits much lower quantum yield than the closing process, hindering their usage in optoelectronic devices. To enhance the opening process, which is supported by visible light, we employ the plasmonic field enhancement of gold films perforated with nanoholes. We show that gold nanohole arrays reveal strong optical transmission in the visible range (∼60%) and pronounced enhancement of field intensities, resulting in around 50% faster switching kinetics of the molecular species in comparison with quartz substrates. The experimental UV-vis measurements are verified with finite-difference time-domain simulation that confirm the obtained results. Thus, we propose gold nanohole arrays as transparent and conductive plasmonic material that accelerates visible-light-triggered chemical reactions including molecular switching.

Nanomolecular electronic devices based on AuNP molecule nanoelectrodes using molecular place-exchange process

The implementation of electronics applications based on molecular electronics devices is hampered by the difficulty of placing a single or a few molecules with application-specific electronic properties in between metallic nanocontacts. Here, we present a novel method to fabricate 20 nm sized nanomolecular electronic devices (nanoMoED) using a molecular place-exchange process of nonconductive short alkyl thiolates with various short chain conductive oligomers. After the successful place-exchange with short-chain conjugated oligomers in the nanoMoED devices, a change in device resistance of up to four orders of magnitude for 4,4'-biphenyldithiol (BPDT), and up to three orders of magnitude for oligo phenylene-ethynylene (OPE), were observed. The place-exchange process in nanoMoEDs are verified by measuring changes in device resistance during repetitive place-exchange processes between conductive and nonconductive molecules and surface-enhanced Raman spectroscopy. This opens vast possibilities for the fabrication and application of nanoMoED devices with a large variety of molecules.

N-Heterocyclic Carbenes for the Self-Assembly of Thin and Highly Insulating Monolayers with High Quality and Stability

As an organic nanostructure, self-assembled monolayers (SAMs) play a central role in many aspects of nanotechnology, including molecular electronics. In this work, we show that SAMs based on N-heterocyclic carbenes on a Au(111) substrate offer a high level of crystallinity and also exhibit the highest possible packing density. As a result of this structural optimization, defect concentrations were reduced by 2-3 orders of magnitude and thermal stability was ∼100 K higher than those of any other SAMs on Au. The conductivity of these SAMs is ∼4 orders of magnitude lower than that of standard alkanethiols of comparable length, which together with very low defect concentration and high thermal stability makes them a highly interesting material for potential application in organic thin film transistors. The self-assembly of such dense, highly crystalline, and notably stable structures is associated with strong C-Au bonding and the rational design of assembled molecules, resulting in the high mobility of both adsorbate and substrate atoms, as confirmed by the size of the molecular domains and the adsorbate-driven modification of the Au(111) substrate, respectively.

Nonvolatile molecular memory with the multilevel states based on MoS2 nanochannel field effect transistor through tuning gate voltage to control molecular configurations

A new flexible memory element is crucial for mobile and wearable electronics. A new concept for memory operation and innovative device structure with new materials is certainly required to address the bottleneck of memory applications now and in the future. We report a new nonvolatile molecular memory with a new operating mechanism based on two-dimensional (2D) material nanochannel field-effect transistors (FETs). The smallest channel length for our 2D material nanochannel FETs was approximately 30 nm. The modified molecular configuration for charge induced in the nanochannel of the MoS₂ FET can be tuned by applying an up-gate voltage pulse, which can vary the channel conductance to exhibit memory states. Through controlling the amounts of triggered molecules through either different gate voltage pulses or gate duration time, multilevel states were obtained in the molecular memory. These new molecular memory transistors exhibited an erase/program ratio of more than three orders of current magnitude and high sensitivity, of a few picoamperes, at the current level. Reproducible operation and four-level states with stable retention and endurance were achieved. We believe this prototype device has potential for use in future memory devices.