1
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Huang W, Braun O, Indolese DI, Barin GB, Gandus G, Stiefel M, Olziersky A, Müllen K, Luisier M, Passerone D, Ruffieux P, Schönenberger C, Watanabe K, Taniguchi T, Fasel R, Zhang J, Calame M, Perrin ML. Edge Contacts to Atomically Precise Graphene Nanoribbons. ACS NANO 2023; 17:18706-18715. [PMID: 37578964 PMCID: PMC10569104 DOI: 10.1021/acsnano.3c00782] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Accepted: 08/08/2023] [Indexed: 08/16/2023]
Abstract
Bottom-up-synthesized graphene nanoribbons (GNRs) are an emerging class of designer quantum materials that possess superior properties, including atomically controlled uniformity and chemically tunable electronic properties. GNR-based devices are promising candidates for next-generation electronic, spintronic, and thermoelectric applications. However, due to their extremely small size, making electrical contact with GNRs remains a major challenge. Currently, the most commonly used methods are top metallic electrodes and bottom graphene electrodes, but for both, the contact resistance is expected to scale with overlap area. Here, we develop metallic edge contacts to contact nine-atom-wide armchair GNRs (9-AGNRs) after encapsulation in hexagonal boron-nitride (h-BN), resulting in ultrashort contact lengths. We find that charge transport in our devices occurs via two different mechanisms: at low temperatures (9 K), charges flow through single GNRs, resulting in quantum dot (QD) behavior with well-defined Coulomb diamonds (CDs), with addition energies in the range of 16 to 400 meV. For temperatures above 100 K, a combination of temperature-activated hopping and polaron-assisted tunneling takes over, with charges being able to flow through a network of 9-AGNRs across distances significantly exceeding the length of individual GNRs. At room temperature, our short-channel field-effect transistor devices exhibit on/off ratios as high as 3 × 105 with on-state current up to 50 nA at 0.2 V. Moreover, we find that the contact performance of our edge-contact devices is comparable to that of top/bottom contact geometries but with a significantly reduced footprint. Overall, our work demonstrates that 9-AGNRs can be contacted at their ends in ultra-short-channel FET devices while being encapsulated in h-BN.
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Affiliation(s)
- Wenhao Huang
- Transport
at Nanoscale Interfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
- Department
of Physics, University of Basel, 4056 Basel, Switzerland
| | - Oliver Braun
- Transport
at Nanoscale Interfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
- Department
of Physics, University of Basel, 4056 Basel, Switzerland
| | | | - Gabriela Borin Barin
- nanotech@surfaces
Laboratory, Empa, Swiss Federal Laboratories
for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | - Guido Gandus
- nanotech@surfaces
Laboratory, Empa, Swiss Federal Laboratories
for Materials Science and Technology, 8600 Dübendorf, Switzerland
- Department
of Information Technology and Electrical Engineering, ETH Zurich, 8092 Zurich, Switzerland
| | - Michael Stiefel
- Transport
at Nanoscale Interfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | | | - Klaus Müllen
- Max Planck
Institute for Polymer Research, 55128 Mainz, Germany
| | - Mathieu Luisier
- Department
of Information Technology and Electrical Engineering, ETH Zurich, 8092 Zurich, Switzerland
- Quantum Center, ETH Zürich, 8093 Zürich, Switzerland
| | - Daniele Passerone
- nanotech@surfaces
Laboratory, Empa, Swiss Federal Laboratories
for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | - Pascal Ruffieux
- nanotech@surfaces
Laboratory, Empa, Swiss Federal Laboratories
for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | | | - Kenji Watanabe
- Research
Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Roman Fasel
- nanotech@surfaces
Laboratory, Empa, Swiss Federal Laboratories
for Materials Science and Technology, 8600 Dübendorf, Switzerland
- Department
of Chemistry, Biochemistry and Pharmaceutical Science, University of Bern, 3012 Bern, Switzerland
| | - Jian Zhang
- Transport
at Nanoscale Interfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | - Michel Calame
- Transport
at Nanoscale Interfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
- Department
of Physics, University of Basel, 4056 Basel, Switzerland
- Swiss Nanoscience
Institute, University of Basel, 4056 Basel, Switzerland
| | - Mickael L. Perrin
- Transport
at Nanoscale Interfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
- Department
of Information Technology and Electrical Engineering, ETH Zurich, 8092 Zurich, Switzerland
- Quantum Center, ETH Zürich, 8093 Zürich, Switzerland
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2
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Graphene nanoribbons initiated from molecularly derived seeds. Nat Commun 2022; 13:2992. [PMID: 35637229 PMCID: PMC9151757 DOI: 10.1038/s41467-022-30563-6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2021] [Accepted: 05/04/2022] [Indexed: 11/08/2022] Open
Abstract
Semiconducting graphene nanoribbons are promising materials for nanoelectronics but are held back by synthesis challenges. Here we report that molecular-scale carbon seeds can be exploited to initiate the chemical vapor deposition (CVD) synthesis of graphene to generate one-dimensional graphene nanoribbons narrower than 5 nm when coupled with growth phenomena that selectively extend seeds along a single direction. This concept is demonstrated by subliming graphene-like polycyclic aromatic hydrocarbon molecules onto a Ge(001) catalyst surface and then anisotropically evolving size-controlled nanoribbons from the seeds along \documentclass[12pt]{minimal}
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\begin{document}$$\left\langle 110\right\rangle$$\end{document}110 of Ge(001) via CH4 CVD. Armchair nanoribbons with mean normalized standard deviation as small as 11% (3 times smaller than nanoribbons nucleated without seeds), aspect ratio as large as 30, and width as narrow as 2.6 nm (tunable via CH4 exposure time) are realized. Two populations of nanoribbons are compared in field-effect transistors (FETs), with off-current differing by 150 times because of the nanoribbons’ different widths. The authors report on harnessing sp2-organic molecules as a basis for uniformly initiating the homoepitaxial-like, size-controlled, synthesis of sub-5 nm semiconducting graphene nanoribbons for electronics via chemical vapor deposition.
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3
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Ji P, Dettmann D, Liu YH, Berti G, Preetha Genesh N, Cui D, MacLean O, Perepichka DF, Chi L, Rosei F. Tandem Desulfurization/C-C Coupling Reaction of Tetrathienylbenzenes on Cu(111): Synthesis of Pentacene and an Exotic Ladder Polymer. ACS NANO 2022; 16:6506-6514. [PMID: 35363486 DOI: 10.1021/acsnano.2c00831] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Surface-confined reactions represent a powerful approach for the precise synthesis of low-dimensional organic materials. A complete understanding of the pathways of surface reactions would enable the rational synthesis of a wide range of molecules and polymers. Here, we report different reaction pathways of tetrathienylbenzene (T1TB) and its extended congener tetrakis(dithienyl)benzene (T2TB) on Cu(111), investigated using scanning tunneling microscopy, X-ray photoelectron spectroscopy, and density functional theory calculations. Both T1TB and T2TB undergo desulfurization when deposited on Cu(111) at room temperature. Deposition of T1TB at 453 K yields pentacene through desulfurization, hydrogen transfer, and a cascade of intramolecular cyclization. In contrast, for T2TB the intramolecular cyclization stops at anthracene and the following intermolecular C-C coupling produces a conjugated ladder polymer. We show that tandem desulfurization/C-C coupling provides a versatile approach for growing carbon-based nanostructures on metal surfaces.
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Affiliation(s)
- Penghui Ji
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials, Soochow University, Suzhou 215123, China
- Centre Énergie, Matériaux et Télécommunications, Institut National de la Recherche Scientifique, 1650 Boulevard Lionel-Boulet, Varennes, Québec J3X 1P7, Canada
| | - Dominik Dettmann
- Centre Énergie, Matériaux et Télécommunications, Institut National de la Recherche Scientifique, 1650 Boulevard Lionel-Boulet, Varennes, Québec J3X 1P7, Canada
- Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche, Via Fosso del Cavaliere 100, Roma 00133, Italy
| | - Ying-Hsuan Liu
- Department of Chemistry, McGill University 801 Sherbrooke Street West, Montreal, Quebec H3A 0B8, Canada
| | - Giulia Berti
- Centre Énergie, Matériaux et Télécommunications, Institut National de la Recherche Scientifique, 1650 Boulevard Lionel-Boulet, Varennes, Québec J3X 1P7, Canada
| | - Navathej Preetha Genesh
- Centre Énergie, Matériaux et Télécommunications, Institut National de la Recherche Scientifique, 1650 Boulevard Lionel-Boulet, Varennes, Québec J3X 1P7, Canada
| | - Daling Cui
- Centre Énergie, Matériaux et Télécommunications, Institut National de la Recherche Scientifique, 1650 Boulevard Lionel-Boulet, Varennes, Québec J3X 1P7, Canada
- Department of Chemistry, McGill University 801 Sherbrooke Street West, Montreal, Quebec H3A 0B8, Canada
| | - Oliver MacLean
- Centre Énergie, Matériaux et Télécommunications, Institut National de la Recherche Scientifique, 1650 Boulevard Lionel-Boulet, Varennes, Québec J3X 1P7, Canada
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun 130103, P.R. China
| | - Dmytro F Perepichka
- Department of Chemistry, McGill University 801 Sherbrooke Street West, Montreal, Quebec H3A 0B8, Canada
| | - Lifeng Chi
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials, Soochow University, Suzhou 215123, China
| | - Federico Rosei
- Centre Énergie, Matériaux et Télécommunications, Institut National de la Recherche Scientifique, 1650 Boulevard Lionel-Boulet, Varennes, Québec J3X 1P7, Canada
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4
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Saraswat V, Jacobberger RM, Arnold MS. Materials Science Challenges to Graphene Nanoribbon Electronics. ACS NANO 2021; 15:3674-3708. [PMID: 33656860 DOI: 10.1021/acsnano.0c07835] [Citation(s) in RCA: 43] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel materials in future nanoelectronic devices due to their exceptional electronic, thermal, and mechanical properties and chemical inertness. However, the adoption of GNRs in commercial technologies is currently hampered by materials science and integration challenges pertaining to synthesis and devices. In this Review, we present an overview of the current status of challenges, recent breakthroughs toward overcoming these challenges, and possible future directions for the field of GNR electronics. We motivate the need for exploration of scalable synthetic techniques that yield atomically precise, placed, registered, and oriented GNRs on CMOS-compatible substrates and stimulate ideas for contact and dielectric engineering to realize experimental performance close to theoretically predicted metrics. We also briefly discuss unconventional device architectures that could be experimentally investigated to harness the maximum potential of GNRs in future spintronic and quantum information technologies.
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Affiliation(s)
- Vivek Saraswat
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Robert M Jacobberger
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Michael S Arnold
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
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5
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Singh P, Abedini Sohi P, Kahrizi M. Finite Element Modelling of Bandgap Engineered Graphene FET with the Application in Sensing Methanethiol Biomarker. SENSORS 2021; 21:s21020580. [PMID: 33467459 PMCID: PMC7830839 DOI: 10.3390/s21020580] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/19/2020] [Revised: 01/10/2021] [Accepted: 01/12/2021] [Indexed: 12/31/2022]
Abstract
In this work, we have designed and simulated a graphene field effect transistor (GFET) with the purpose of developing a sensitive biosensor for methanethiol, a biomarker for bacterial infections. The surface of a graphene layer is functionalized by manipulation of its surface structure and is used as the channel of the GFET. Two methods, doping the crystal structure of graphene and decorating the surface by transition metals (TMs), are utilized to change the electrical properties of the graphene layers to make them suitable as a channel of the GFET. The techniques also change the surface chemistry of the graphene, enhancing its adsorption characteristics and making binding between graphene and biomarker possible. All the physical parameters are calculated for various variants of graphene in the absence and presence of the biomarker using counterpoise energy-corrected density functional theory (DFT). The device was modelled using COMSOL Multiphysics. Our studies show that the sensitivity of the device is affected by structural parameters of the device, the electrical properties of the graphene, and with adsorption of the biomarker. It was found that the devices made of graphene layers decorated with TM show higher sensitivities toward detecting the biomarker compared with those made by doped graphene layers.
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6
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Jacobberger RM, Thapar V, Wu GP, Chang TH, Saraswat V, Way AJ, Jinkins KR, Ma Z, Nealey PF, Hur SM, Xiong S, Arnold MS. Boundary-directed epitaxy of block copolymers. Nat Commun 2020; 11:4151. [PMID: 32814775 PMCID: PMC7438520 DOI: 10.1038/s41467-020-17938-3] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/06/2019] [Accepted: 07/20/2020] [Indexed: 11/13/2022] Open
Abstract
Directed self-assembly of block copolymers (BCPs) enables nanofabrication at sub-10 nm dimensions, beyond the resolution of conventional lithography. However, directing the position, orientation, and long-range lateral order of BCP domains to produce technologically-useful patterns is a challenge. Here, we present a promising approach to direct assembly using spatial boundaries between planar, low-resolution regions on a surface with different composition. Pairs of boundaries are formed at the edges of isolated stripes on a background substrate. Vertical lamellae nucleate at and are pinned by chemical contrast at each stripe/substrate boundary, align parallel to boundaries, selectively propagate from boundaries into stripe interiors (whereas horizontal lamellae form on the background), and register to wide stripes to multiply the feature density. Ordered BCP line arrays with half-pitch of 6.4 nm are demonstrated on stripes >80 nm wide. Boundary-directed epitaxy provides an attractive path towards assembling, creating, and lithographically defining materials on sub-10 nm scales.
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Affiliation(s)
- Robert M Jacobberger
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Vikram Thapar
- School of Polymer Science and Engineering, Chonnam National University, Gwangju, 61186, South Korea
| | - Guang-Peng Wu
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA.
- MOE Key Laboratory of Macromolecular Synthesis and Functionalization, and Key Laboratory of Adsorption and Separation Materials and Technologies of Zhejiang Province, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
| | - Tzu-Hsuan Chang
- Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
- Department of Electrical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Vivek Saraswat
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Austin J Way
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Katherine R Jinkins
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Zhenqiang Ma
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
- Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
- Department of Engineering Physics, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Paul F Nealey
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA
| | - Su-Mi Hur
- School of Polymer Science and Engineering, Chonnam National University, Gwangju, 61186, South Korea.
| | - Shisheng Xiong
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA.
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China.
| | - Michael S Arnold
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA.
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7
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Tries A, Osella S, Zhang P, Xu F, Ramanan C, Kläui M, Mai Y, Beljonne D, Wang HI. Experimental Observation of Strong Exciton Effects in Graphene Nanoribbons. NANO LETTERS 2020; 20:2993-3002. [PMID: 32207957 PMCID: PMC7311082 DOI: 10.1021/acs.nanolett.9b04816] [Citation(s) in RCA: 31] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2019] [Revised: 03/21/2020] [Indexed: 05/29/2023]
Abstract
Graphene nanoribbons (GNRs) with atomically precise width and edge structures are a promising class of nanomaterials for optoelectronics, thanks to their semiconducting nature and high mobility of charge carriers. Understanding the fundamental static optical properties and ultrafast dynamics of charge carrier generation in GNRs is essential for optoelectronic applications. Combining THz spectroscopy and theoretical calculations, we report a strong exciton effect with binding energy up to ∼700 meV in liquid-phase-dispersed GNRs with a width of 1.7 nm and an optical band gap of ∼1.6 eV, illustrating the intrinsically strong Coulomb interactions between photogenerated electrons and holes. By tracking the exciton dynamics, we reveal an ultrafast formation of excitons in GNRs with a long lifetime over 100 ps. Our results not only reveal fundamental aspects of excitons in GNRs (strong binding energy and ultrafast exciton formation etc.) but also highlight promising properties of GNRs for optoelectronic devices.
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Affiliation(s)
- Alexander Tries
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
- Institute
of Physics and Graduate School of Excellence Material Sciences in
Mainz, Johannes Gutenberg-University Mainz, D-55128 Mainz, Germany
| | - Silvio Osella
- Chemical
and Biological Systems Simulation Lab, Centre of New Technologies, University of Warsaw, Banacha 2C, 02-097 Warsaw, Poland
| | - Pengfei Zhang
- School
of Chemistry and Chemical Engineering, Frontiers Science Center for
Transformative Molecules, Shanghai Jiao
Tong University, 800 Dongchuan Road, Shanghai 200240, China
| | - Fugui Xu
- School
of Chemistry and Chemical Engineering, Frontiers Science Center for
Transformative Molecules, Shanghai Jiao
Tong University, 800 Dongchuan Road, Shanghai 200240, China
| | - Charusheela Ramanan
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Mathias Kläui
- Institute
of Physics and Graduate School of Excellence Material Sciences in
Mainz, Johannes Gutenberg-University Mainz, D-55128 Mainz, Germany
| | - Yiyong Mai
- School
of Chemistry and Chemical Engineering, Frontiers Science Center for
Transformative Molecules, Shanghai Jiao
Tong University, 800 Dongchuan Road, Shanghai 200240, China
| | - David Beljonne
- Laboratory
for Chemistry of Novel Materials, Université
de Mons, Place du Parc,
20, B-7000 Mons, Belgium
| | - Hai I. Wang
- Max
Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
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8
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Tries A, Richter N, Chen Z, Narita A, Müllen K, Wang HI, Bonn M, Kläui M. Hysteresis in graphene nanoribbon field-effect devices. Phys Chem Chem Phys 2020; 22:5667-5672. [DOI: 10.1039/d0cp00298d] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Defects in the oxide layer are the main cause for hysteresis in graphene nanoribbon FETs.
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Affiliation(s)
- Alexander Tries
- Institute of Physics
- Johannes Gutenberg-University Mainz
- D-55128 Mainz
- Germany
- Graduate School of Excellence Materials Science in Mainz
| | - Nils Richter
- Institute of Physics
- Johannes Gutenberg-University Mainz
- D-55128 Mainz
- Germany
- Graduate School of Excellence Materials Science in Mainz
| | - Zongping Chen
- Max Planck Institute for Polymer Research
- D-55128 Mainz
- Germany
- School of Materials Science and Engineering
- Zhejiang University
| | - Akimitsu Narita
- Max Planck Institute for Polymer Research
- D-55128 Mainz
- Germany
| | - Klaus Müllen
- Max Planck Institute for Polymer Research
- D-55128 Mainz
- Germany
- Institute of Physical Chemistry
- Johannes Gutenberg-University Mainz
| | - Hai I. Wang
- Max Planck Institute for Polymer Research
- D-55128 Mainz
- Germany
| | - Mischa Bonn
- Graduate School of Excellence Materials Science in Mainz
- D-55128 Mainz
- Germany
- Max Planck Institute for Polymer Research
- D-55128 Mainz
| | - Mathias Kläui
- Institute of Physics
- Johannes Gutenberg-University Mainz
- D-55128 Mainz
- Germany
- Graduate School of Excellence Materials Science in Mainz
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9
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Way AJ, Murray EA, Göltl F, Saraswat V, Jacobberger RM, Mavrikakis M, Arnold MS. Anisotropic Synthesis of Armchair Graphene Nanoribbon Arrays from Sub-5 nm Seeds at Variable Pitches on Germanium. J Phys Chem Lett 2019; 10:4266-4272. [PMID: 31287706 DOI: 10.1021/acs.jpclett.9b01079] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
At widths below 10 nm, armchair graphene nanoribbons become semiconductors. One promising route to synthesize nanoribbons is chemical vapor deposition (CVD) of hydrocarbons on Ge(001), and synthesis from seeds reduces nanoribbon polydispersity. In this contribution, we advance the seed-initiated synthesis of nanoribbons and explore the impact of seed size and nanoribbon spacing on growth kinetics. Periodic arrays of graphene seeds are lithographically patterned and etched to reduce their diameter. The viability of initiating synthesis from sub-5 nm seeds is demonstrated, and the pitch between nanoribbons is reduced from 500 to 50 nm to show that crowding effects do not perturb nanoribbon growth kinetics. The invariance of kinetics with pitch in combination with density functional theory (DFT) calculations indicate that (1) the growth species for synthesis has a diffusion length of ≪50 nm and/or (2) the kinetics are strongly attachment-limited. These results demonstrate that seed-initiated synthesis on Ge(001) is a promising route for creating dense arrays of armchair graphene nanoribbons for semiconductor electronics applications.
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Affiliation(s)
- Austin J Way
- Department of Materials Science & Engineering , University of Wisconsin-Madison , Madison , Wisconsin 53706 , United States
| | - Ellen A Murray
- Department of Chemical and Biological Engineering , University of Wisconsin-Madison , Madison , Wisconsin 53706 , United States
| | - Florian Göltl
- Department of Chemical and Biological Engineering , University of Wisconsin-Madison , Madison , Wisconsin 53706 , United States
| | - Vivek Saraswat
- Department of Materials Science & Engineering , University of Wisconsin-Madison , Madison , Wisconsin 53706 , United States
| | - Robert M Jacobberger
- Department of Materials Science & Engineering , University of Wisconsin-Madison , Madison , Wisconsin 53706 , United States
| | - Manos Mavrikakis
- Department of Chemical and Biological Engineering , University of Wisconsin-Madison , Madison , Wisconsin 53706 , United States
| | - Michael S Arnold
- Department of Materials Science & Engineering , University of Wisconsin-Madison , Madison , Wisconsin 53706 , United States
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10
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Lee JH, Kang SG, Jang HS, Moon JY, Whang D. Graphene on Group-IV Elementary Semiconductors: The Direct Growth Approach and Its Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1803469. [PMID: 30734378 DOI: 10.1002/adma.201803469] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2018] [Revised: 11/17/2018] [Indexed: 06/09/2023]
Abstract
Since the first development of large-area graphene synthesis by the chemical vapor deposition (CVD) method in 2009, CVD-graphene has been considered to be a key material in the future electronics, energy, and display industries, which require transparent, flexible, and stretchable characteristics. Although many graphene-based prototype applications have been demonstrated, several important issues must be addressed in order for them to be compatible with current complementary metal-oxide-semiconductor (CMOS)-based manufacturing processes. In particular, metal contamination and mechanical damage, caused by the metal catalyst for graphene growth, are known to cause severe and irreversible deterioration in the performance of devices. The most effective way to solve the problems is to grow the graphene directly on the semiconductor substrate. Herein, recent advances in the direct growth of graphene on group-IV semiconductors are reviewed, focusing mainly on the growth mechanism and initial growth behavior when graphene is synthesized on Si and Ge. Furthermore, recent progress in the device applications of graphene with Si and Ge are presented. Finally, perspectives for future research in graphene with a semiconductor are discussed.
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Affiliation(s)
- Jae-Hyun Lee
- Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon, Gyeonggi-do, 16499, South Korea
| | - Seog-Gyun Kang
- School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 16419, South Korea
| | - Hyeon-Sik Jang
- School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 16419, South Korea
| | - Ji-Yun Moon
- Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon, Gyeonggi-do, 16499, South Korea
| | - Dongmok Whang
- School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 16419, South Korea
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11
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Clément P, Xu X, Stoppiello CT, Rance GA, Attanzio A, O'Shea JN, Temperton RH, Khlobystov AN, Lovelock KRJ, Seymour JM, Fogarty RM, Baker A, Bourne RA, Hall B, Chamberlain TW, Palma M. Direct Synthesis of Multiplexed Metal‐Nanowire‐Based Devices by Using Carbon Nanotubes as Vector Templates. Angew Chem Int Ed Engl 2019; 58:9928-9932. [DOI: 10.1002/anie.201902857] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/06/2019] [Indexed: 01/23/2023]
Affiliation(s)
- Pierrick Clément
- School of Biological and Chemical SciencesMaterials Research InstituteQueen Mary University of London London E1 4NS UK
| | - Xinzhao Xu
- School of Biological and Chemical SciencesMaterials Research InstituteQueen Mary University of London London E1 4NS UK
| | | | - Graham A. Rance
- The Nanoscale and Microscale Research CentreUniversity of Nottingham Nottingham NG7 2RD UK
| | - Antonio Attanzio
- School of Biological and Chemical SciencesMaterials Research InstituteQueen Mary University of London London E1 4NS UK
| | - James N. O'Shea
- School of PhysicsUniversity of Nottingham Nottingham NG7 2RD UK
| | | | - Andrei N. Khlobystov
- School of ChemistryUniversity of Nottingham Nottingham NG7 2RD UK
- The Nanoscale and Microscale Research CentreUniversity of Nottingham Nottingham NG7 2RD UK
| | | | - Jake M. Seymour
- School of Chemistry, Food and PharmacyUniversity of Reading Reading RG6 6AT UK
| | | | - Alastair Baker
- Institute of Process Research and Development, School of Chemistry and School of Chemical and Process EngineeringUniversity of Leeds Leeds LS2 9JT UK
| | - Richard A. Bourne
- Institute of Process Research and Development, School of Chemistry and School of Chemical and Process EngineeringUniversity of Leeds Leeds LS2 9JT UK
| | - Brendan Hall
- Institute of Process Research and Development, School of Chemistry and School of Chemical and Process EngineeringUniversity of Leeds Leeds LS2 9JT UK
| | - Thomas W. Chamberlain
- Institute of Process Research and Development, School of Chemistry and School of Chemical and Process EngineeringUniversity of Leeds Leeds LS2 9JT UK
| | - Matteo Palma
- School of Biological and Chemical SciencesMaterials Research InstituteQueen Mary University of London London E1 4NS UK
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12
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Clément P, Xu X, Stoppiello CT, Rance GA, Attanzio A, O'Shea JN, Temperton RH, Khlobystov AN, Lovelock KRJ, Seymour JM, Fogarty RM, Baker A, Bourne RA, Hall B, Chamberlain TW, Palma M. Direct Synthesis of Multiplexed Metal‐Nanowire‐Based Devices by Using Carbon Nanotubes as Vector Templates. Angew Chem Int Ed Engl 2019. [DOI: 10.1002/ange.201902857] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Pierrick Clément
- School of Biological and Chemical SciencesMaterials Research InstituteQueen Mary University of London London E1 4NS UK
| | - Xinzhao Xu
- School of Biological and Chemical SciencesMaterials Research InstituteQueen Mary University of London London E1 4NS UK
| | | | - Graham A. Rance
- The Nanoscale and Microscale Research CentreUniversity of Nottingham Nottingham NG7 2RD UK
| | - Antonio Attanzio
- School of Biological and Chemical SciencesMaterials Research InstituteQueen Mary University of London London E1 4NS UK
| | - James N. O'Shea
- School of PhysicsUniversity of Nottingham Nottingham NG7 2RD UK
| | | | - Andrei N. Khlobystov
- School of ChemistryUniversity of Nottingham Nottingham NG7 2RD UK
- The Nanoscale and Microscale Research CentreUniversity of Nottingham Nottingham NG7 2RD UK
| | | | - Jake M. Seymour
- School of Chemistry, Food and PharmacyUniversity of Reading Reading RG6 6AT UK
| | | | - Alastair Baker
- Institute of Process Research and Development, School of Chemistry and School of Chemical and Process EngineeringUniversity of Leeds Leeds LS2 9JT UK
| | - Richard A. Bourne
- Institute of Process Research and Development, School of Chemistry and School of Chemical and Process EngineeringUniversity of Leeds Leeds LS2 9JT UK
| | - Brendan Hall
- Institute of Process Research and Development, School of Chemistry and School of Chemical and Process EngineeringUniversity of Leeds Leeds LS2 9JT UK
| | - Thomas W. Chamberlain
- Institute of Process Research and Development, School of Chemistry and School of Chemical and Process EngineeringUniversity of Leeds Leeds LS2 9JT UK
| | - Matteo Palma
- School of Biological and Chemical SciencesMaterials Research InstituteQueen Mary University of London London E1 4NS UK
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13
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Jacobberger RM, Murray EA, Fortin-Deschênes M, Göltl F, Behn WA, Krebs ZJ, Levesque PL, Savage DE, Smoot C, Lagally MG, Desjardins P, Martel R, Brar V, Moutanabbir O, Mavrikakis M, Arnold MS. Alignment of semiconducting graphene nanoribbons on vicinal Ge(001). NANOSCALE 2019; 11:4864-4875. [PMID: 30821309 DOI: 10.1039/c9nr00713j] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Chemical vapor deposition of CH4 on Ge(001) can enable anisotropic growth of narrow, semiconducting graphene nanoribbons with predominately smooth armchair edges and high-performance charge transport properties. However, such nanoribbons are not aligned in one direction but instead grow perpendicularly, which is not optimal for integration into high-performance electronics. Here, it is demonstrated that vicinal Ge(001) substrates can be used to synthesize armchair nanoribbons, of which ∼90% are aligned within ±1.5° perpendicular to the miscut. When the growth rate is slow, graphene crystals evolve as nanoribbons. However, as the growth rate increases, the uphill and downhill crystal edges evolve asymmetrically. This asymmetry is consistent with stronger binding between the downhill edge and the Ge surface, for example due to different edge termination as shown by density functional theory calculations. By tailoring growth rate and time, nanoribbons with sub-10 nm widths that exhibit excellent charge transport characteristics, including simultaneous high on-state conductance of 8.0 μS and a high on/off conductance ratio of 570 in field-effect transistors, are achieved. Large-area alignment of semiconducting ribbons with promising charge transport properties is an important step towards understanding the anisotropic nanoribbon growth and integrating these materials into scalable, future semiconductor technologies.
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Affiliation(s)
- Robert M Jacobberger
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
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14
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Silva GG, Ribeiro Junior LA, Pereira Junior ML, Fonseca ALDA, de Sousa Júnior RT, Silva GME. Bipolaron Dynamics in Graphene Nanoribbons. Sci Rep 2019; 9:2909. [PMID: 30814607 PMCID: PMC6393677 DOI: 10.1038/s41598-019-39774-2] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/06/2018] [Accepted: 01/28/2019] [Indexed: 11/18/2022] Open
Abstract
Graphene nanoribbons (GNRs) are two-dimensional structures with a rich variety of electronic properties that derive from their semiconducting band gaps. In these materials, charge transport can occur via a hopping process mediated by carriers formed by self-interacting states between the excess charge and local lattice deformations. Here, we use a two-dimensional tight-binding approach to reveal the formation of bipolarons in GNRs. Our results show that the formed bipolarons are dynamically stable even for high electric field strengths when it comes to GNRs. Remarkably, the bipolaron dynamics can occur in acoustic and optical regimes concerning its saturation velocity. The phase transition between these two regimes takes place for a critical field strength in which the bipolaron moves roughly with the speed of sound in the material.
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Affiliation(s)
- Gesiel Gomes Silva
- Goiás Federal Institute of Education, Science and Technology, Luziania, Goias, 72.811-580, Brazil
| | - Luiz Antonio Ribeiro Junior
- Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83, Linkoping, Sweden.
- International Center for Condensed Matter Physics, University of Brasília, P.O. Box 04513, 70910-900, Brasília, Brazil.
- University of Brasília, PPG-CIMA, Campus Planaltina, 73345-010, Brasília, DF, Brazil.
| | | | - Antonio Luciano de Almeida Fonseca
- International Center for Condensed Matter Physics, University of Brasília, P.O. Box 04513, 70910-900, Brasília, Brazil
- University of Brasília, PPG-CIMA, Campus Planaltina, 73345-010, Brasília, DF, Brazil
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15
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Rao R, Pint CL, Islam AE, Weatherup RS, Hofmann S, Meshot ER, Wu F, Zhou C, Dee N, Amama PB, Carpena-Nuñez J, Shi W, Plata DL, Penev ES, Yakobson BI, Balbuena PB, Bichara C, Futaba DN, Noda S, Shin H, Kim KS, Simard B, Mirri F, Pasquali M, Fornasiero F, Kauppinen EI, Arnold M, Cola BA, Nikolaev P, Arepalli S, Cheng HM, Zakharov DN, Stach EA, Zhang J, Wei F, Terrones M, Geohegan DB, Maruyama B, Maruyama S, Li Y, Adams WW, Hart AJ. Carbon Nanotubes and Related Nanomaterials: Critical Advances and Challenges for Synthesis toward Mainstream Commercial Applications. ACS NANO 2018; 12:11756-11784. [PMID: 30516055 DOI: 10.1021/acsnano.8b06511] [Citation(s) in RCA: 168] [Impact Index Per Article: 28.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Advances in the synthesis and scalable manufacturing of single-walled carbon nanotubes (SWCNTs) remain critical to realizing many important commercial applications. Here we review recent breakthroughs in the synthesis of SWCNTs and highlight key ongoing research areas and challenges. A few key applications that capitalize on the properties of SWCNTs are also reviewed with respect to the recent synthesis breakthroughs and ways in which synthesis science can enable advances in these applications. While the primary focus of this review is on the science framework of SWCNT growth, we draw connections to mechanisms underlying the synthesis of other 1D and 2D materials such as boron nitride nanotubes and graphene.
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Affiliation(s)
- Rahul Rao
- Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright Patterson Air Force Base , Dayton , Ohio 45433 , United States
- UES Inc. , Dayton , Ohio 45433 , United States
| | - Cary L Pint
- Department of Mechanical Engineering , Vanderbilt University , Nashville , Tennessee 37235 United States
| | - Ahmad E Islam
- Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright Patterson Air Force Base , Dayton , Ohio 45433 , United States
- UES Inc. , Dayton , Ohio 45433 , United States
| | - Robert S Weatherup
- School of Chemistry , University of Manchester , Oxford Road , Manchester M13 9PL , U.K
- University of Manchester at Harwell, Diamond Light Source, Didcot , Oxfordshire OX11 0DE , U.K
| | - Stephan Hofmann
- Department of Engineering , University of Cambridge , Cambridge CB3 0FA , U.K
| | - Eric R Meshot
- Physical and Life Sciences Directorate , Lawrence Livermore National Laboratory , Livermore , California 94550 United States
| | - Fanqi Wu
- Ming-Hsieh Department of Electrical Engineering , University of Southern California , Los Angeles , California 90089 , United States
| | - Chongwu Zhou
- Ming-Hsieh Department of Electrical Engineering , University of Southern California , Los Angeles , California 90089 , United States
| | - Nicholas Dee
- Department of Mechanical Engineering , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
| | - Placidus B Amama
- Tim Taylor Department of Chemical Engineering , Kansas State University , Manhattan , Kansas 66506 , United States
| | - Jennifer Carpena-Nuñez
- Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright Patterson Air Force Base , Dayton , Ohio 45433 , United States
- UES Inc. , Dayton , Ohio 45433 , United States
| | - Wenbo Shi
- Department of Chemical and Environmental Engineering , Yale University , New Haven , Connecticut 06520 , United States
| | - Desiree L Plata
- Department of Civil and Environmental Engineering , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
| | - Evgeni S Penev
- Department of Materials Science and NanoEngineering , Rice University , Houston , Texas 77005 , United States
| | - Boris I Yakobson
- Department of Materials Science and NanoEngineering , Rice University , Houston , Texas 77005 , United States
| | - Perla B Balbuena
- Department of Chemical Engineering, Department of Materials Science and Engineering, Department of Chemistry , Texas A&M University , College Station , Texas 77843 , United States
| | - Christophe Bichara
- Aix-Marseille University and CNRS , CINaM UMR 7325 , 13288 Marseille , France
| | - Don N Futaba
- Nanotube Research Center , National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565 , Japan
| | - Suguru Noda
- Department of Applied Chemistry and Waseda Research Institute for Science and Engineering , Waseda University , 3-4-1 Okubo , Shinjuku-ku, Tokyo 169-8555 , Japan
| | - Homin Shin
- Security and Disruptive Technologies Research Centre, Emerging Technologies Division , National Research Council Canada , Ottawa , Ontario K1A 0R6 , Canada
| | - Keun Su Kim
- Security and Disruptive Technologies Research Centre, Emerging Technologies Division , National Research Council Canada , Ottawa , Ontario K1A 0R6 , Canada
| | - Benoit Simard
- Security and Disruptive Technologies Research Centre, Emerging Technologies Division , National Research Council Canada , Ottawa , Ontario K1A 0R6 , Canada
| | - Francesca Mirri
- Department of Materials Science and NanoEngineering , Rice University , Houston , Texas 77005 , United States
| | - Matteo Pasquali
- Department of Materials Science and NanoEngineering , Rice University , Houston , Texas 77005 , United States
| | - Francesco Fornasiero
- Physical and Life Sciences Directorate , Lawrence Livermore National Laboratory , Livermore , California 94550 United States
| | - Esko I Kauppinen
- Department of Applied Physics , Aalto University School of Science , P.O. Box 15100 , FI-00076 Espoo , Finland
| | - Michael Arnold
- Department of Materials Science and Engineering University of Wisconsin-Madison , Madison , Wisconsin 53706 , United States
| | - Baratunde A Cola
- George W. Woodruff School of Mechanical Engineering and School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
| | - Pavel Nikolaev
- Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright Patterson Air Force Base , Dayton , Ohio 45433 , United States
- UES Inc. , Dayton , Ohio 45433 , United States
| | - Sivaram Arepalli
- Department of Materials Science and NanoEngineering , Rice University , Houston , Texas 77005 , United States
| | - Hui-Ming Cheng
- Tsinghua-Berkeley Shenzhen Institute , Tsinghua University , Shenzhen 518055 , China
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , Shenyang 110016 , China
| | - Dmitri N Zakharov
- Center for Functional Nanomaterials , Brookhaven National Laboratory , Upton , New York 11973 , United States
| | - Eric A Stach
- Department of Materials Science and Engineering , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Jin Zhang
- College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , China
| | - Fei Wei
- Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering , Tsinghua University , Beijing 100084 , China
| | - Mauricio Terrones
- Department of Physics and Center for Two-Dimensional and Layered Materials , The Pennsylvania State University , University Park , Pennsylvania 16802 , United States
| | - David B Geohegan
- Center for Nanophase Materials Sciences , Oak Ridge National Laboratory , Oak Ridge , Tennessee 37831 , United States
| | - Benji Maruyama
- Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright Patterson Air Force Base , Dayton , Ohio 45433 , United States
| | - Shigeo Maruyama
- Department of Mechanical Engineering , The University of Tokyo , 7-3-1 Hongo , Bunkyo-ku , Tokyo 113-8656 , Japan
| | - Yan Li
- College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , China
| | - W Wade Adams
- Department of Materials Science and NanoEngineering , Rice University , Houston , Texas 77005 , United States
| | - A John Hart
- Department of Mechanical Engineering , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
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16
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Khan A, Islam SM, Ahmed S, Kumar RR, Habib MR, Huang K, Hu M, Yu X, Yang D. Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2018; 5:1800050. [PMID: 30479910 PMCID: PMC6247071 DOI: 10.1002/advs.201800050] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2018] [Revised: 04/22/2018] [Indexed: 05/12/2023]
Abstract
To fabricate graphene based electronic and optoelectronic devices, it is highly desirable to develop a variety of metal-catalyst free chemical vapor deposition (CVD) techniques for direct synthesis of graphene on dielectric and semiconducting substrates. This will help to avoid metallic impurities, high costs, time consuming processes, and defect-inducing graphene transfer processes. Direct CVD growth of graphene on dielectric substrates is usually difficult to accomplish due to their low surface energy. However, a low-temperature plasma enhanced CVD technique could help to solve this problem. Here, the recent progress of metal-catalyst free direct CVD growth of graphene on technologically important dielectric (SiO2, ZrO2, HfO2, h-BN, Al2O3, Si3N4, quartz, MgO, SrTiO3, TiO2, etc.) and semiconducting (Si, Ge, GaN, and SiC) substrates is reviewed. High and low temperature direct CVD growth of graphene on these substrates including growth mechanism and morphology is discussed. Detailed discussions are also presented for Si and Ge substrates, which are necessary for next generation graphene/Si/Ge based hybrid electronic devices. Finally, the technology development of the metal-catalyst free direct CVD growth of graphene on these substrates is concluded, with future outlooks.
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Affiliation(s)
- Afzal Khan
- State Key Laboratory of Silicon Materials and School of Materials Science and EngineeringZhejiang UniversityHangzhouZhejiang310027China
| | - Sk Masiul Islam
- Optoelectronics and MOEMS GroupCouncil of Scientific and Industrial Research‐Central Electronics Engineering Research InstitutePilani333031RajasthanIndia
- Academy of Scientific and Innovative Research (AcSIR)Ghaziabad201002Uttar PradeshIndia
| | - Shahzad Ahmed
- Centre for Nanoscience and NanotechnologyJamia Millia Islamia (Central University)New Delhi110025India
| | - Rishi R. Kumar
- Centre for Nanoscience and NanotechnologyJamia Millia Islamia (Central University)New Delhi110025India
| | - Mohammad R. Habib
- State Key Laboratory of Silicon Materials and College of Information Science and Electronic EngineeringZhejiang UniversityHangzhouZhejiang310027China
| | - Kun Huang
- State Key Laboratory of Silicon Materials and School of Materials Science and EngineeringZhejiang UniversityHangzhouZhejiang310027China
| | - Ming Hu
- State Key Laboratory of Silicon Materials and School of Materials Science and EngineeringZhejiang UniversityHangzhouZhejiang310027China
| | - Xuegong Yu
- State Key Laboratory of Silicon Materials and School of Materials Science and EngineeringZhejiang UniversityHangzhouZhejiang310027China
| | - Deren Yang
- State Key Laboratory of Silicon Materials and School of Materials Science and EngineeringZhejiang UniversityHangzhouZhejiang310027China
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17
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Way AJ, Jacobberger RM, Arnold MS. Seed-Initiated Anisotropic Growth of Unidirectional Armchair Graphene Nanoribbon Arrays on Germanium. NANO LETTERS 2018; 18:898-906. [PMID: 29382200 DOI: 10.1021/acs.nanolett.7b04240] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
It was recently discovered that the chemical vapor deposition (CVD) of CH4 on Ge(001) can directly yield long, narrow, semiconducting nanoribbons of graphene with smooth armchair edges. These nanoribbons have exceptional charge transport properties compared with nanoribbons grown by other methods. However, the nanoribbons nucleate at random locations and at random times, problematically giving rise to width and bandgap polydispersity, and the mechanisms that drive the anisotropic crystal growth that produces the nanoribbons are not understood. Here, we study and engineer the seed-initiated growth of graphene nanoribbons on Ge(001). The use of seeds decouples nucleation and growth, controls where growth occurs, and allows graphene to grow with lattice orientations that do not spontaneously form without seeds. We discover that when the armchair direction (i.e., parallel to C-C bonds) of the seeds is aligned with the Ge⟨110⟩ family of directions, the growth anisotropy is maximized, resulting in the formation of nanoribbons with high-aspect ratios. In contrast, increasing misorientation from Ge⟨110⟩ yields decreasingly anisotropic crystals. Measured growth rate data are used to generate a construction analogous to a kinetic Wulff plot that quantitatively predicts the shape of graphene crystals on Ge(001). This knowledge is employed to fabricate regularly spaced, unidirectional arrays of nanoribbons and to significantly improve their uniformity. These results show that seed-initiated graphene synthesis on Ge(001) will be a viable route for creating wafer-scale arrays of narrow, semiconducting, armchair nanoribbons with rationally controlled placement and alignment for a wide range of semiconductor electronics technologies, provided that dense arrays of sub-10 nm seeds can be uniformly fabricated in the future.
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Affiliation(s)
- Austin J Way
- Department of Materials Science and Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States
| | - Robert M Jacobberger
- Department of Materials Science and Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States
| | - Michael S Arnold
- Department of Materials Science and Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States
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