1
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Guo Y, Li J, Zhan X, Wang C, Li M, Zhang B, Wang Z, Liu Y, Yang K, Wang H, Li W, Gu P, Luo Z, Liu Y, Liu P, Chen B, Watanabe K, Taniguchi T, Chen XQ, Qin C, Chen J, Sun D, Zhang J, Wang R, Liu J, Ye Y, Li X, Hou Y, Zhou W, Wang H, Han Z. Van der Waals polarity-engineered 3D integration of 2D complementary logic. Nature 2024; 630:346-352. [PMID: 38811731 PMCID: PMC11168927 DOI: 10.1038/s41586-024-07438-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 04/18/2024] [Indexed: 05/31/2024]
Abstract
Vertical three-dimensional integration of two-dimensional (2D) semiconductors holds great promise, as it offers the possibility to scale up logic layers in the z axis1-3. Indeed, vertical complementary field-effect transistors (CFETs) built with such mixed-dimensional heterostructures4,5, as well as hetero-2D layers with different carrier types6-8, have been demonstrated recently. However, so far, the lack of a controllable doping scheme (especially p-doped WSe2 (refs. 9-17) and MoS2 (refs. 11,18-28)) in 2D semiconductors, preferably in a stable and non-destructive manner, has greatly impeded the bottom-up scaling of complementary logic circuitries. Here we show that, by bringing transition metal dichalcogenides, such as MoS2, atop a van der Waals (vdW) antiferromagnetic insulator chromium oxychloride (CrOCl), the carrier polarity in MoS2 can be readily reconfigured from n- to p-type via strong vdW interfacial coupling. The consequential band alignment yields transistors with room-temperature hole mobilities up to approximately 425 cm2 V-1 s-1, on/off ratios reaching 106 and air-stable performance for over one year. Based on this approach, vertically constructed complementary logic, including inverters with 6 vdW layers, NANDs with 14 vdW layers and SRAMs with 14 vdW layers, are further demonstrated. Our findings of polarity-engineered p- and n-type 2D semiconductor channels with and without vdW intercalation are robust and universal to various materials and thus may throw light on future three-dimensional vertically integrated circuits based on 2D logic gates.
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Affiliation(s)
- Yimeng Guo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Anhui, China
| | - Jiangxu Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Xuepeng Zhan
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China
| | - Chunwen Wang
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Min Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, China
| | - Biao Zhang
- School of Materials, Shenzhen Campus of Sun Yat-Sen University, Shenzhen, China
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing, China
| | - Zirui Wang
- School of Integrated Circuits, Peking University, Beijing, China
| | - Yueyang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences Beijing, Beijing, China
| | - Kaining Yang
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China
| | - Hai Wang
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China
| | - Wanying Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Pingfan Gu
- Collaborative Innovation Center of Quantum Matter, Beijing, China
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, China
| | - Zhaoping Luo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Yingjia Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Anhui, China
| | - Peitao Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Bo Chen
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Xing-Qiu Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Chengbing Qin
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan, China
| | - Jiezhi Chen
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China
| | - Dongming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Jing Zhang
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China
| | - Runsheng Wang
- School of Integrated Circuits, Peking University, Beijing, China
| | - Jianpeng Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, China
- Liaoning Academy of Materials, Shenyang, China
| | - Yu Ye
- Collaborative Innovation Center of Quantum Matter, Beijing, China
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, China
- Liaoning Academy of Materials, Shenyang, China
| | - Xiuyan Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
- Liaoning Academy of Materials, Shenyang, China.
| | - Yanglong Hou
- School of Materials, Shenzhen Campus of Sun Yat-Sen University, Shenzhen, China.
- School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing, China.
| | - Wu Zhou
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, People's Republic of China.
| | - Hanwen Wang
- Liaoning Academy of Materials, Shenyang, China.
| | - Zheng Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China.
- Liaoning Academy of Materials, Shenyang, China.
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2
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Mukherjee S, Dutta D, Ghosh A, Koren E. Graphene-In 2Se 3 van der Waals Heterojunction Neuristor for Optical In-Memory Bimodal Operation. ACS NANO 2023; 17:22287-22298. [PMID: 37930899 DOI: 10.1021/acsnano.3c03820] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/08/2023]
Abstract
Functional diversification at the single-device level has become essential for emerging optical neural network (ONN) development. Stable ferroelectricity harnessed with strong light sensitivity in α-In2Se3 holds great potential for developing ultrathin neuromorphic devices. Herein, we demonstrated an all-2D van der Waals heterostructure-based programmable synaptic field effect transistor (FET) utilizing a ferroelectric α-In2Se3 nanosheet and monolayer graphene. The devices exhibited reconfigurable, multilevel nonvolatile memory (NVM) states, which can be successively modulated by multiple dual-mode (optical and electrical) stimuli and thereby used to realize energy-efficient, heterosynaptic functionalities in a biorealistic fashion. Furthermore, under light illumination, the prototypical device can toggle between volatile (photodetector) and nonvolatile optical random-access memory (ORAM) logic operation, depending upon the ferroelectric-dipole induced band adjustment. Finally, plasticity modulation from short-term to prominent long-term characteristics over a wide dynamic range was demonstrated. The inherent operation mechanism owing to the switchable polarization-induced electronic band alignment and bidirectional barrier height modulation at the heterointerface was revealed by conjugated electronic transport and Kelvin-probe force microscopy (KPFM) measurements. Overall, robust (opto)electronic weight controllability for integrated in-sensor and in-memory logic processors and multibit ORAM systems was readily accomplished by the synergistic ferrophotonic heterostructure properties. Our presented results facilitate the technological implementation of versatile all-2D heterosynapses for next-generation perception, optoelectronic logic systems, and Internet-of-Things (IoT) entities.
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Affiliation(s)
- Subhrajit Mukherjee
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Debopriya Dutta
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Anurag Ghosh
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Elad Koren
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
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3
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Cai J, Sun Z, Wu P, Tripathi R, Lan HY, Kong J, Chen Z, Appenzeller J. High-Performance Complementary Circuits from Two-Dimensional MoTe 2. NANO LETTERS 2023. [PMID: 37976291 DOI: 10.1021/acs.nanolett.3c03184] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/19/2023]
Abstract
Two-dimensional (2D) materials hold great promise for future complementary metal-oxide semiconductor (CMOS) technology. However, the lack of effective methods to tune the Schottky barrier poses a challenge in constructing high-performance complementary circuits from the same material. Here, we reveal that the polarity of pristine MoTe2 field-effect transistors (FETs) with minimized air exposure is n-type, irrespective of the metal contact type. The fabricated n-FETs with palladium contact can reach electron currents up to 275 μA/μm at VDS = 2 V. For p-FETs, we introduce a novel nitric oxide doping strategy, allowing a controlled transition of MoTe2 FETs from n-type to unipolar p-type. By doping only in the contact region, we demonstrate hole currents up to 170 μA/μm at VDS= -2 V with preserved Ion/Ioff ratios of 105. Finally, we present a complementary inverter circuit comprising the high-performance n- and p-type FETs based on MoTe2, promoting the application of 2D materials in future electronic systems.
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Affiliation(s)
- Jun Cai
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Zheng Sun
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Peng Wu
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Rahul Tripathi
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Hao-Yu Lan
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Jing Kong
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Zhihong Chen
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Joerg Appenzeller
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
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4
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Chen G, Meng W, Guan X, Zhao P, Jia S, Zheng H, Zhao D, Wang J. Strong interlayer coupling and unusual antisite defect-mediated p-type conductivity in GeP x ( x = 1, 2). NANOSCALE 2023; 15:9139-9147. [PMID: 37144280 DOI: 10.1039/d3nr01677c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
As an emerging candidate for anisotropic two-dimensional materials, the group IV-V family (e.g. GeP, GeP2) has appealing applications in photoelectronics. However, their intrinsic point defect properties, which largely determine the device performance and optimization, are still poorly explored. In our study, through density functional theory (DFT) calculations, antisite defects were affirmed to be dominant with the lowest formation energies in 2D GePx semiconductors because of the similar atomic size and electronegativity of elemental components, which is in contrast to previous calculations and experimental speculation. These antisite defects could introduce relatively shallow states within the bandgap in bulk cases. The transition energy levels and electronic structures of defects reveal that GeP and PGe antisites act as dominant acceptors and donors, respectively. Strong interlayer coupling between anions results in a significant upshift of the valence band maximum (VBM) and shallower acceptor behaviors of GePx. Together with the dominant GeP antisite defect, the large upshift of the VBM in GeP leads to a remarkable transition of conductivity from intrinsic in the monolayer to p-type in the bulk. Such a synergistic effect in GeP2 is rather weak due to the strong inherent intralayer coupling of anions. Our research provides deep insights into the strong anion coupling effects on the electronic structures and defect properties of GeP and GeP2, which sheds light on defect engineering and electronic applications of GePx based semiconductors.
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Affiliation(s)
- Guoxujia Chen
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China.
| | - Weiwei Meng
- South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
| | - Xiaoxi Guan
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China.
| | - Peili Zhao
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China.
| | - Shuangfeng Jia
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China.
| | - He Zheng
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China.
- Suzhou Institute of Wuhan University, Suzhou, Jiangsu 215124, China
- Wuhan University Shenzhen Research Institute, Shenzhen, Guangdong 518057, China
| | - Dongshan Zhao
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China.
| | - Jianbo Wang
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China.
- Core Facility of Wuhan University, Wuhan 430072, China
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5
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Liu C, Cao Y, Wang B, Zhang Z, Lin Y, Xu L, Yang Y, Jin C, Peng LM, Zhang Z. Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays. ACS NANO 2022; 16:21482-21490. [PMID: 36416375 DOI: 10.1021/acsnano.2c10007] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
High-density semiconducting aligned carbon nanotube (A-CNT) arrays have been demonstrated with wafer-scale preparation of materials and have shown high performance in P-type field-effect transistors (FETs) and great potential for applications in future digital integrated circuits (ICs). However, high-performance N-type FETs (N-FETs) have not yet been implemented with A-CNTs, making development of complementary metal-oxide-semiconductor (CMOS) technology, a necessary component for modern digital ICs, impossible. In this work, we reveal the mechanism hindering the realization of A-CNT N-FETs contacted by low-work-function metals and develop corresponding solutions to promote the performance of N-FETs to that of P-type FETs (P-FETs). The fabricated scandium (Sc)-contacted A-CNT N-FET with a 100 nm gate length exhibits an on-state current (Ion) of 800 μA/μm and a peak transconductance (gm) of 250 μS/μm, representing the highest performance of CNT-based N-FETs to date. Moreover, CMOS technology has been developed to realize N- and P-FETs with symmetric high performance based on A-CNTs. The fabricated A-CNT CMOS FETs show electron and hole mobilities of 325 and 241 cm2 V-1 s-1, respectively, which are slightly higher than the corresponding values of Si CMOS transistors. Our scalable fabrication of A-CNT CMOS FETs with comparable electronic performance to Si CMOS will promote the application of CNT-based electronics in digital ICs.
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Affiliation(s)
- Chenchen Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| | - Yu Cao
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Bo Wang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Zixuan Zhang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Yanxia Lin
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Lin Xu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Yingjun Yang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Beijing Institute of Carbon-based Integrated Circuits, Beijing 100195, China
| | - Chuanhong Jin
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Beijing Institute of Carbon-based Integrated Circuits, Beijing 100195, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Beijing Institute of Carbon-based Integrated Circuits, Beijing 100195, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
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6
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Shen Y, Dong Z, Sun Y, Guo H, Wu F, Li X, Tang J, Liu J, Wu X, Tian H, Ren TL. The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201916. [PMID: 35535757 DOI: 10.1002/adma.202201916] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2022] [Revised: 04/12/2022] [Indexed: 06/14/2023]
Abstract
2D transition metal chalcogenide (TMDC) materials, such as MoS2 , have recently attracted considerable research interest in the context of their use in ultrascaled devices owing to their excellent electronic properties. Microprocessors and neural network circuits based on MoS2 have been developed at a large scale but still do not have an advantage over silicon in terms of their integrated density. In this study, the current structures, contact engineering, and doping methods for 2D TMDC materials for the scaling-down process and performance optimization are reviewed. Devices are introduced according to a new mechanism to provide the comprehensive prospects for the use of MoS2 beyond the traditional complementary-metal-oxide semiconductor in order to summarize obstacles to the goal of developing high-density and low-power integrated circuits (ICs). Finally, prospects for the use of MoS2 in large-scale ICs from the perspectives of the material, system performance, and application to nonlogic functionalities such as sensor circuits and analogous circuits, are briefly analyzed. The latter issue is along the direction of "more than Moore" research.
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Affiliation(s)
- Yang Shen
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Zuoyuan Dong
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Yabin Sun
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Hao Guo
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Fan Wu
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Xianglong Li
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Jun Tang
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Jun Liu
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Xing Wu
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - He Tian
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Tian-Ling Ren
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
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7
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Bao L, Huang L, Guo H, Gao HJ. Construction and physical properties of low-dimensional structures for nanoscale electronic devices. Phys Chem Chem Phys 2022; 24:9082-9117. [PMID: 35383791 DOI: 10.1039/d1cp05981e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Over the past decades, construction of nanoscale electronic devices with novel functionalities based on low-dimensional structures, such as single molecules and two-dimensional (2D) materials, has been rapidly developed. To investigate their intrinsic properties for versatile functionalities of nanoscale electronic devices, it is crucial to precisely control the structures and understand the physical properties of low-dimensional structures at the single atomic level. In this review, we provide a comprehensive overview of the construction of nanoelectronic devices based on single molecules and 2D materials and the investigation of their physical properties. For single molecules, we focus on the construction of single-molecule devices, such as molecular motors and molecular switches, by precisely controlling their self-assembled structures on metal substrates and charge transport properties. For 2D materials, we emphasize their spin-related electrical transport properties for spintronic device applications and the role that interfaces among 2D semiconductors, contact electrodes, and dielectric substrates play in the electrical performance of electronic, optoelectronic, and memory devices. Finally, we discuss the future research direction in this field, where we can expect a scientific breakthrough.
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Affiliation(s)
- Lihong Bao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, P. R. China. .,Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
| | - Li Huang
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
| | - Hui Guo
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
| | - Hong-Jun Gao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, P. R. China. .,Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
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8
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Ben J, Liu X, Wang C, Zhang Y, Shi Z, Jia Y, Zhang S, Zhang H, Yu W, Li D, Sun X. 2D III-Nitride Materials: Properties, Growth, and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2006761. [PMID: 34050555 DOI: 10.1002/adma.202006761] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2020] [Revised: 12/31/2020] [Indexed: 06/12/2023]
Abstract
2D III-nitride materials have been receiving considerable attention recently due to their excellent physicochemical properties, such as high stability, wide and tunable bandgap, and magnetism. Therefore, 2D III-nitride materials can be applied in various fields, such as electronic and photoelectric devices, spin-based devices, and gas detectors. Although the developments of 2D h-BN materials have been successful, the fabrication of other 2D III-nitride materials, such as 2D h-AlN, h-GaN, and h-InN, are still far from satisfactory, which limits the practical applications of these materials. In this review, recent advances in the properties, growth methods, and potential applications of 2D III-nitride materials are summarized. The properties of the 2D III-nitride materials are mainly obtained by first-principles calculations because of the difficulties in the growth and characterizations of these materials. The discussion on the growth of 2D III-nitride materials is focused on 2D h-BN and h-AlN, as the developments of 2D h-GaN and h-InN are yet to be realized. Therefore, applications have been realized mostly based on the 2D h-BN materials; however, many potential applications are cited for the entire range of 2D III-nitride materials. Finally, future research directions and prospects in this field are also discussed.
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Affiliation(s)
- Jianwei Ben
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Xinke Liu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Cong Wang
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Yupeng Zhang
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Zhiming Shi
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Yuping Jia
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Shanli Zhang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Han Zhang
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Wenjie Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Dabing Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Xiaojuan Sun
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
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9
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Lv L, Yu J, Hu M, Yin S, Zhuge F, Ma Y, Zhai T. Design and tailoring of two-dimensional Schottky, PN and tunnelling junctions for electronics and optoelectronics. NANOSCALE 2021; 13:6713-6751. [PMID: 33885475 DOI: 10.1039/d1nr00318f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Owing to their superior carrier mobility, strong light-matter interactions, and flexibility at the atomically thin thickness, two-dimensional (2D) materials are attracting wide interest for application in electronic and optoelectronic devices, including rectifying diodes, transistors, memory, photodetectors, and light-emitting diodes. At the heart of these devices, Schottky, PN, and tunneling junctions are playing an essential role in defining device function. Intriguingly, the ultrathin thickness and unique van der Waals (vdW) interlayer coupling in 2D materials has rendered enormous opportunities for the design and tailoring of various 2D junctions, e.g. using Lego-like hetero-stacking, surface decoration, and field-effect modulation methods. Such flexibility has led to marvelous breakthroughs during the exploration of 2D electronics and optoelectronic devices. To advance further, it is imperative to provide an overview of existing strategies for the engineering of various 2D junctions for their integration in the future. Thus, in this review, we provide a comprehensive survey of previous efforts toward 2D Schottky, PN, and tunneling junctions, and the functional devices built from them. Though these junctions exhibit similar configurations, distinct strategies have been developed for their optimal figures of merit based on their working principles and functional purposes.
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Affiliation(s)
- Liang Lv
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
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10
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Cheng J, Gao L, Li T, Mei S, Wang C, Wen B, Huang W, Li C, Zheng G, Wang H, Zhang H. Two-Dimensional Black Phosphorus Nanomaterials: Emerging Advances in Electrochemical Energy Storage Science. NANO-MICRO LETTERS 2020; 12:179. [PMID: 34138158 PMCID: PMC7770910 DOI: 10.1007/s40820-020-00510-5] [Citation(s) in RCA: 34] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2020] [Accepted: 07/23/2020] [Indexed: 05/19/2023]
Abstract
Two-dimensional black phosphorus (2D BP), well known as phosphorene, has triggered tremendous attention since the first discovery in 2014. The unique puckered monolayer structure endows 2D BP intriguing properties, which facilitate its potential applications in various fields, such as catalyst, energy storage, sensor, etc. Owing to the large surface area, good electric conductivity, and high theoretical specific capacity, 2D BP has been widely studied as electrode materials and significantly enhanced the performance of energy storage devices. With the rapid development of energy storage devices based on 2D BP, a timely review on this topic is in demand to further extend the application of 2D BP in energy storage. In this review, recent advances in experimental and theoretical development of 2D BP are presented along with its structures, properties, and synthetic methods. Particularly, their emerging applications in electrochemical energy storage, including Li-/K-/Mg-/Na-ion, Li-S batteries, and supercapacitors, are systematically summarized with milestones as well as the challenges. Benefited from the fast-growing dynamic investigation of 2D BP, some possible improvements and constructive perspectives are provided to guide the design of 2D BP-based energy storage devices with high performance.
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Affiliation(s)
- Junye Cheng
- Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
- Department of Mechanical Engineering, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China
| | - Lingfeng Gao
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Tian Li
- Department of Mechanical Engineering, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China
| | - Shan Mei
- Department of Materials Science and Engineering, Drexel University, Philadelphia, PA, 19104, USA
| | - Cong Wang
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Bo Wen
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Weichun Huang
- Nantong Key Lab of Intelligent and New Energy Materials, College of Chemistry and Chemical Engineering, Nantong University, Nantong, 226019, Jiangsu, People's Republic of China
| | - Chao Li
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Guangping Zheng
- Department of Mechanical Engineering, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China
| | - Hao Wang
- Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China.
| | - Han Zhang
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060, People's Republic of China.
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11
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Recent insights into the robustness of two-dimensional black phosphorous in optoelectronic applications. JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY C-PHOTOCHEMISTRY REVIEWS 2020. [DOI: 10.1016/j.jphotochemrev.2020.100354] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
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12
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Yang H, Xiang D, Mao H, Liu T, Wang Y, Guo R, Zheng Y, Ye X, Gao J, Ge Q, Deng C, Cai W, Zhang X, Qin S, Chen W. Native Oxide Seeded Spontaneous Integration of Dielectrics on Exfoliated Black Phosphorus. ACS APPLIED MATERIALS & INTERFACES 2020; 12:24411-24418. [PMID: 32352282 DOI: 10.1021/acsami.0c01161] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) semiconductors have been a central focus for next-generation electronics and optoelectronics owing to their great potential to extend the scaling limits in a silicon transistor. However, due to the lack of surface dangling bonds in most 2D semiconductors, such as graphene and transition metal dichalcogenides (TMDs), the direct growth of the high-κ film on these 2D materials via an atomic layer deposition (ALD) technique often produces dielectrics with poor quality, which hinders their integration in the modern semiconductor industry. Here, we comprehensively investigate the ALD growth of the Al2O3 layer on 2D exfoliated black phosphorus (BP). Intriguingly, we found that the 2D BP with "silicon-like" characteristics possesses a native surface oxide layer PxOy after air exposure. The PxOy-induced surface dangling bonds enable the spontaneous integration of the high-quality Al2O3 layer on the BP flake without any pretreatments to functionalize the surface. Additionally, the Al2O3 layer could effectively passivate BP to prevent its degradation in ambient conditions, which addresses the most serious problem of the BP material. Moreover, the Al2O3-encapsulated BP field-effect transistor (FET) exhibits good electrical transport performance, with a high hole mobility of ∼420 cm2 V-1 s-1 and electron mobility of ∼80 cm2 V-1 s-1. Moreover, the high-quality Al2O3 layer can also be integrated into the top-gated BP transistor and inverter. Our findings reveal the silicon-like characteristics of BP for the high-κ ALD dielectric growth technology, which promises the seamless integration of 2D BP in the modern semiconductor industry.
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Affiliation(s)
- Hang Yang
- College of Arts and Science, National University of Defense Technology, Changsha 410073, China
- Department of Physics, National University of Singapore, Singapore 117543, Singapore
| | - Du Xiang
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Hongying Mao
- Department of Physics, Hangzhou Normal University, Hangzhou 311121, China
| | - Tao Liu
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Yanan Wang
- Department of Physics, National University of Singapore, Singapore 117543, Singapore
| | - Rui Guo
- Department of Physics, National University of Singapore, Singapore 117543, Singapore
| | - Yue Zheng
- Department of Physics, National University of Singapore, Singapore 117543, Singapore
| | - Xin Ye
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Jing Gao
- Department of Physics, National University of Singapore, Singapore 117543, Singapore
| | - Qi Ge
- Chongqing 2D Materials Institute, Liangjiang New Area, Chongqing 400714, China
| | - Chuyun Deng
- College of Arts and Science, National University of Defense Technology, Changsha 410073, China
| | - Weiwei Cai
- College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
| | - Xueao Zhang
- Chongqing 2D Materials Institute, Liangjiang New Area, Chongqing 400714, China
- College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
| | - Shiqiao Qin
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Wei Chen
- Department of Physics, National University of Singapore, Singapore 117543, Singapore
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
- National University of Singapore (Suzhou) Research Institute, 377 Lin Quan Street, Suzhou Industrial Park, Suzhou 215123, Jiangsu, China
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13
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Maity A, Sui X, Pu H, Bottum KJ, Jin B, Chang J, Zhou G, Lu G, Chen J. Sensitive field-effect transistor sensors with atomically thin black phosphorus nanosheets. NANOSCALE 2020; 12:1500-1512. [PMID: 31859311 DOI: 10.1039/c9nr09354k] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Atomically thin black phosphorus (BP) field-effect transistors have excellent potential for sensing applications. However, commercial scaling of PFET sensors is still in the early stage due to various technical challenges, such as tedious fabrication, low response% caused by rapid oxidation, non-ideal response output (spike/bidirectional), and large device variation due to poor control over layer thickness among devices. Attempts have been made to address these issues. First, a theoretical model for response% dependence on the number of layers is developed to show the role of atomically thin BP for better responses. A position-tracked, selected-area-exfoliation method has been developed to rapidly produce thin BP layers with a narrow distribution (∼1-7 layers), which can harness excellent gate control over the PFET channel. The typical current on/off ratio is in the range of ∼300-500. The cysteine-modified Al2O3-gated PFET sensors show high responses (∼30-900%) toward a wide detection range (∼1-400 ppb) of lead ions in water with a typical response time of ∼10-30 s. A strategy to minimize device variation is proposed by correlating PFETs' on/off ratio with sensitivity parameters. The thickness variation of the gate oxide is investigated to explain non-ideal and ideal response transient kinetics.
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Affiliation(s)
- Arnab Maity
- Department of Mechanical Engineering, University of Wisconsin-Milwaukee, Milwaukee, WI 53211, USA.
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14
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Du C, Zhang M, Huang Q, Zhang S, Chai Y. Ultralow-voltage all-carbon low-dimensional-material flexible transistors integrated by room-temperature photolithography incorporated filtration. NANOSCALE 2019; 11:15029-15036. [PMID: 31263822 DOI: 10.1039/c9nr02511a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Low dimensional materials (LDMs) have drawn world-wide attention as potential candidates applied in flexible and wearable electronics. It is an attractive research topic to systematically integrate all-LDMs to realize flexible electronics. However, it is difficult to pattern LDMs by conventional photolithography and plasma etching without harming the other overlapped analogous components. Here, we propose and realize independent-operation all-LDM flexible transistors integrated into a 2-inch substrate using the proposed photolithography incorporated filtration (PIF) platform. The transistors consisting of only one-dimensional carbon nanotubes and two-dimensional graphene oxide show an ultralow operating voltage of less than -1 V, an extraordinary subthreshold swing (SS) of 170 mV dec-1, a low threshold voltage (Vth) of -0.3 V and a high carrier mobility up to 105 cm2 V-1 s-1. Moreover, the device shows a small bending radius of 1 mm and a transistor transparency of 94%. The full room-temperature process further demonstrates the great potential of applying the proposed devices and the PIF platform to future high-performance flexible transparent electronics. This work provides a novel route to tackle the difficulty in integrating solution processed LDMs.
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Affiliation(s)
- Chunhui Du
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.
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15
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Liao W, Wang L, Chen L, Wei W, Zeng Z, Feng X, Huang L, Tan WC, Huang X, Ang KW, Zhu C. Efficient and reliable surface charge transfer doping of black phosphorus via atomic layer deposited MgO toward high performance complementary circuits. NANOSCALE 2018; 10:17007-17014. [PMID: 30203816 DOI: 10.1039/c8nr04420a] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Black phosphorus (BP), a fast emerging 2D material, has shown great potential in future electronics and optoelectronics owing to its outstanding properties including sizable band gap and ambipolar transport characteristics. However, its hole conduction dominance, featured by a much larger hole mobility and the corresponding on-current than that of the electrons, renders the reliable modulation of its carrier type and density a key challenge, thereby hindering its application to complementary electronics. Here, we demonstrate an efficient and reliable n-type doping for BP transistors via surface functionalization by atomic layer deposited magnesium oxide (MgO) with favorable controllability. By optimizing the MgO thickness, an electron mobility of up to 95.5 cm2 V-1 s-1 is reached with a simultaneous significant suppression of hole conduction. Subsequently, a high-performance complementary logic inverter is demonstrated within a single BP flake, which operates well with a supply voltage as low as <0.5 V, outperforming reported BP inverters in terms of logic level match, power consumption and process feasibility. Our findings suggest that surface charge transfer doping via MgO can be used as a promising technique towards high performance BP-based functional nanoelectronics.
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Affiliation(s)
- Wugang Liao
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583 Singapore.
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16
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Wang B, Huang W, Chi L, Al-Hashimi M, Marks TJ, Facchetti A. High- k Gate Dielectrics for Emerging Flexible and Stretchable Electronics. Chem Rev 2018; 118:5690-5754. [PMID: 29785854 DOI: 10.1021/acs.chemrev.8b00045] [Citation(s) in RCA: 178] [Impact Index Per Article: 29.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2023]
Abstract
Recent advances in flexible and stretchable electronics (FSE), a technology diverging from the conventional rigid silicon technology, have stimulated fundamental scientific and technological research efforts. FSE aims at enabling disruptive applications such as flexible displays, wearable sensors, printed RFID tags on packaging, electronics on skin/organs, and Internet-of-things as well as possibly reducing the cost of electronic device fabrication. Thus, the key materials components of electronics, the semiconductor, the dielectric, and the conductor as well as the passive (substrate, planarization, passivation, and encapsulation layers) must exhibit electrical performance and mechanical properties compatible with FSE components and products. In this review, we summarize and analyze recent advances in materials concepts as well as in thin-film fabrication techniques for high- k (or high-capacitance) gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductors. Since thin-film transistors (TFTs) are the key enablers of FSE devices, we discuss TFT structures and operation mechanisms after a discussion on the needs and general requirements of gate dielectrics. Also, the advantages of high- k dielectrics over low- k ones in TFT applications were elaborated. Next, after presenting the design and properties of high- k polymers and inorganic, electrolyte, and hybrid dielectric families, we focus on the most important fabrication methodologies for their deposition as TFT gate dielectric thin films. Furthermore, we provide a detailed summary of recent progress in performance of FSE TFTs based on these high- k dielectrics, focusing primarily on emerging semiconductor types. Finally, we conclude with an outlook and challenges section.
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Affiliation(s)
- Binghao Wang
- Department of Chemistry and the Materials Research Center , Northwestern University , 2145 Sheridan Road , Evanston , Illinois 60208 , United States.,Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices , Soochow University , 199 Ren'ai Road , Suzhou 215123 , China
| | - Wei Huang
- Department of Chemistry and the Materials Research Center , Northwestern University , 2145 Sheridan Road , Evanston , Illinois 60208 , United States
| | - Lifeng Chi
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices , Soochow University , 199 Ren'ai Road , Suzhou 215123 , China
| | - Mohammed Al-Hashimi
- Department of Chemistry , Texas A&M University at Qatar , PO Box 23874, Doha , Qatar
| | - Tobin J Marks
- Department of Chemistry and the Materials Research Center , Northwestern University , 2145 Sheridan Road , Evanston , Illinois 60208 , United States
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center , Northwestern University , 2145 Sheridan Road , Evanston , Illinois 60208 , United States.,Flexterra Corporation , 8025 Lamon Avenue , Skokie , Illinois 60077 , United States
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17
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Venuthurumilli PK, Ye PD, Xu X. Plasmonic Resonance Enhanced Polarization-Sensitive Photodetection by Black Phosphorus in Near Infrared. ACS NANO 2018; 12:4861-4867. [PMID: 29684270 DOI: 10.1021/acsnano.8b01660] [Citation(s) in RCA: 60] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Black phosphorus, a recently intensely investigated two-dimensional material, is promising for electronic and optoelectronic applications due to its higher mobility and thickness-dependent direct band gap. With its low direct band gap and anisotropic properties in nature, black phosphorus is also suitable for near-infrared polarization-sensitive photodetection. To enhance photoresponsivity of a black phosphorus based photodetector, we demonstrate two designs of plasmonic structures. In the first design, plasmonic bowtie antennas are used to increase the photocurrent, particularly in the armchair direction, where the optical absorption is higher than that in the zigzag direction. The simulated electric field distribution with bowtie structures shows enhanced optical absorption by localized surface plasmons. In the second design, bowtie apertures are used to enhance the inherent polarization selectivity of black phosphorus. A high photocurrent ratio (armchair to zigzag) of 8.7 is obtained. We choose a near-infrared wavelength of 1550 nm to demonstrate the photosensitivity enhancement and polarization selectivity, as it is useful for applications including telecommunication, remote sensing, biological imaging, and infrared polarimetry imaging.
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Affiliation(s)
- Prabhu K Venuthurumilli
- School of Mechanical Engineering and Birck Nanotechnology Center , Purdue University , West Lafayette , Indiana 47907 , United States
| | - Peide D Ye
- School of Electrical and Computer Engineering , Purdue University , West Lafayette , Indiana 47907 , United States
| | - Xianfan Xu
- School of Mechanical Engineering and Birck Nanotechnology Center , Purdue University , West Lafayette , Indiana 47907 , United States
- School of Electrical and Computer Engineering , Purdue University , West Lafayette , Indiana 47907 , United States
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18
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Li J, Ruan L, Wu Z, Zhang G, Wang Y. All-phosphorus flexible devices with non-collinear electrodes: a first principles study. Phys Chem Chem Phys 2018. [PMID: 29513307 DOI: 10.1039/c7cp08462e] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
With the continuous expansion of the family of two-dimensional (2D) materials, flexible electronics based on 2D materials have quickly emerged. Theoretically, predicting the transport properties of the flexible devices made up of 2D materials using first principles is of great importance. Using density functional theory combined with the non-equilibrium Green's function formalism, we calculated the transport properties of all-phosphorus flexible devices with non-collinear electrodes, and the results predicted that the device with compressed metallic phosphorene electrodes sandwiching a P-type semiconducting phosphorene shows a better and robust conducting behavior against the bending of the semiconducting region when the angle between the two electrodes is less than 45°, which indicates that this system is very promising for flexible electronics. The calculation of a quantum transport system with non-collinear electrodes demonstrated in this work will provide more interesting information on mesoscopic material systems and related devices.
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Affiliation(s)
- Junjun Li
- College of Chemical and Environmental Engineering, Harbin University of Science and Technology, Harbin 150080, China.
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19
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Tan WC, Huang L, Ng RJ, Wang L, Hasan DMN, Duffin TJ, Kumar KS, Nijhuis CA, Lee C, Ang KW. A Black Phosphorus Carbide Infrared Phototransistor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:1705039. [PMID: 29266512 DOI: 10.1002/adma.201705039] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/04/2017] [Revised: 10/04/2017] [Indexed: 06/07/2023]
Abstract
Photodetectors with broadband detection capability are desirable for sensing applications in the coming age of the internet-of-things. Although 2D layered materials (2DMs) have been actively pursued due to their unique optical properties, by far only graphene and black arsenic phosphorus have the wide absorption spectrum that covers most molecular vibrational fingerprints. However, their reported responsivity and response time are falling short of the requirements needed for enabling simultaneous weak-signal and high-speed detections. Here, a novel 2DM, black phosphorous carbide (b-PC) with a wide absorption spectrum up to 8000 nm is synthesized and a b-PC phototransistor with a tunable responsivity and response time at an excitation wavelength of 2004 nm is demonstrated. The b-PC phototransistor achieves a peak responsivity of 2163 A W-1 and a shot noise equivalent power of 1.3 fW Hz-1/2 at 2004 nm. In addition, it is shown that a response time of 0.7 ns is tunable by the gating effect, which renders it versatile for high-speed applications. Under the same signal strength (i.e., excitation power), its performance in responsivity and detectivity in room temperature condition is currently ahead of recent top-performing photodetectors based on 2DMs that operate with a small bias voltage of 0.2 V.
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Affiliation(s)
- Wee Chong Tan
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore, 117543, Singapore
| | - Li Huang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore, 117543, Singapore
| | - Rui Jie Ng
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore, 117543, Singapore
| | - Lin Wang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore, 117543, Singapore
| | - Dihan Md Nuruddin Hasan
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Thorin Jake Duffin
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
- NUSNNI-Nanocore, National University of Singapore, Singapore, 117411, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 1175464, Singapore
- National University of Singapore Graduate School for Integrative Sciences and Engineering, National University of Singapore, 28 Medical Drive, Singapore, 117456, Singapore
| | - Karuppannan Senthil Kumar
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
- NUSNNI-Nanocore, National University of Singapore, Singapore, 117411, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 1175464, Singapore
- National University of Singapore Graduate School for Integrative Sciences and Engineering, National University of Singapore, 28 Medical Drive, Singapore, 117456, Singapore
| | - Christian A Nijhuis
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
- NUSNNI-Nanocore, National University of Singapore, Singapore, 117411, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 1175464, Singapore
- National University of Singapore Graduate School for Integrative Sciences and Engineering, National University of Singapore, 28 Medical Drive, Singapore, 117456, Singapore
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore, 117543, Singapore
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20
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Huang L, Tan WC, Wang L, Dong B, Lee C, Ang KW. Infrared Black Phosphorus Phototransistor with Tunable Responsivity and Low Noise Equivalent Power. ACS APPLIED MATERIALS & INTERFACES 2017; 9:36130-36136. [PMID: 28959887 DOI: 10.1021/acsami.7b09713] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The narrow band gap property of black phosphorus (BP) that bridges the energy gap between graphene and transition metal dichalcogenides holds great promise for enabling broadband optical detection from ultraviolet to infrared wavelengths. Despite its rich potential as an intriguing building block for optoelectronic applications, however, very little progress has been made in realizing BP-based infrared photodetectors. Here, we demonstrate a high sensitivity BP phototransistor that operates at a short-wavelength infrared (SWIR) of 2 μm under room temperature. Excellent tunability of responsivity and photoconductive gain are acquired by utilizing the electrostatic gating effect, which controls the dominant photocurrent generation mechanism via adjusting the band alignment in the phototransistor. Under a nanowatt-level illumination, a peak responsivity of 8.5 A/W and a low noise equivalent power (NEP) of less than 1 pW/Hz1/2 are achieved at a small operating source-drain bias of -1 V. Our phototransistor demonstrates a simple and effective approach to continuously tune the detection capability of BP photodetectors, paving the way to exploit BP to numerous low-light-level detection applications such as biomolecular sensing, meteorological data collection, and thermal imaging.
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Affiliation(s)
- Li Huang
- Department of Electrical and Computer Engineering, National University of Singapore , 4 Engineering Drive 3, 117583, Singapore
- Centre for Advanced 2D Materials, National University of Singapore , 6 Science Drive 2, 117546, Singapore
| | - Wee Chong Tan
- Department of Electrical and Computer Engineering, National University of Singapore , 4 Engineering Drive 3, 117583, Singapore
- Centre for Advanced 2D Materials, National University of Singapore , 6 Science Drive 2, 117546, Singapore
| | - Lin Wang
- Department of Electrical and Computer Engineering, National University of Singapore , 4 Engineering Drive 3, 117583, Singapore
- Centre for Advanced 2D Materials, National University of Singapore , 6 Science Drive 2, 117546, Singapore
| | - Bowei Dong
- Department of Electrical and Computer Engineering, National University of Singapore , 4 Engineering Drive 3, 117583, Singapore
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore , 4 Engineering Drive 3, 117583, Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore , 4 Engineering Drive 3, 117583, Singapore
- Centre for Advanced 2D Materials, National University of Singapore , 6 Science Drive 2, 117546, Singapore
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