Ultrasmall Plasmonic Single Nanoparticle Light Source Driven by a Graphene Tunnel Junction

Identifying high-order plasmon modes in silver nanoparticle-over-mirror configuration

Metallic nanoparticle-over-mirror (NPOM) represents as a versatile plasmonic configuration for surface enhanced spectroscopy, sensing and light-emitting metasurfaces. However, experimentally identifying the high-order localized surface plasmon modes in NPOM, especially for the best plasmonic material silver, is often hindered by the small scattering cross-section of high-order plasmon modes and the poor reproducibility of the spectra across different NPOMs, resulted from the polyhedral morphology of the colloidal nanoparticles or the rough surface of deposited polycrystalline metals. In this study, we identify the high-order localized surface plasmon modes in silver NPOM by using differential reflection spectroscopy. We achieved reproducible single-particle absorption spectra by constructing uniform NPOM consisting of silver nanospheres, single-crystallized silver microplates, and a self-assembled monolayer of 1,10-decanedithiol. For comparison, silver NPOM created from typical polycrystalline films exhibits significant spectral fluctuations, even when employing template stripping methods to minimize the film roughness. Identifying high-order plasmon modes in the NPOM configuration offers a pathway to construct high-quality plasmonic substrates for applications such as colloidal metasurface, surface-enhanced Raman spectroscopy, fluorescence, or infrared absorption.

Surface plasmon enhancement in silver nanowires and bilayer two-dimensional materials

In order to improve the low light absorption of two-dimensional (2D) transition metal dichalcogenides (TMDCs), surface plasmon (SP) nanostructures have been widely studied. However, the impact of interlayer twist on such nanostructures has rarely been studied. Here, we construct two different composite structures of silver nanowires (Ag NWs) and pristine bilayer MoS2 (pBLM) or twisted bilayer MoS2 (tBLM). The interlayer twist can further promote the light utilization of MoS2, resulting in an ∼4-fold higher spectral enhancement in Ag/tBLM than that in Ag/pBLM. In addition, the photocurrent and detectivity of the phototransistor based on the Ag/tBLM composite structure were improved by 7-fold and ∼100-fold, respectively, compared to those of the Ag/pBLM phototransistor. Theoretical simulations show that the enhancement of photocurrent can be attributed to the enhancement of the local electric field at the interface between Ag NWs and the tBLM film, which is called the 'hot spot'. These results provide a reference for understanding the modulation mechanism of SPs and interlayer twist on the optoelectronic properties of 2D materials.

Light-Emitting Plasmonic Tunneling Junctions: Current Status and Perspectives

Quantum tunneling, in which electrons can tunnel through a finite potential barrier while simultaneously interacting with other matter excitation, is one of the most fascinating phenomena without classical correspondence. In an extremely thin metallic nanogap, the deep-subwavelength-confined plasmon modes can be directly excited by the inelastically tunneling electrons driven by an externally applied voltage. Light emission via inelastic tunneling possesses a great potential application for next-generation light sources, with great superiority of ultracompact integration, large bandwidth, and ultrafast response. In this Perspective, we first briefly introduce the mechanism of plasmon generation in the inelastic electron tunneling process. Then the state of the art in plasmonic tunneling junctions will be reviewed, particularly emphasizing efficiency improvement, precise construction, active control, and electrically driven optical antenna integration. Ultimately, we forecast some promising and critical prospects that require further investigation.

Broadband Tunable Infrared Light Emission from Metal-Oxide-Semiconductor Tunnel Junctions in Silicon Photonics

Broadband near-infrared light emitting tunnel junctions are demonstrated with efficient coupling to a silicon photonic waveguide. The metal oxide semiconductor devices show long hybrid photonic-plasmonic mode propagation lengths of approximately 10 μm and thus can be integrated into an overcoupled resonant cavity with quality factor Q ≈ 49, allowing for tens of picowatt near-infrared light emission coupled directly into a waveguide. The electron inelastic tunneling transition rate and the cavity mode density are modeled, and the transverse magnetic (TM) hybrid mode excitation rate is derived. The results coincide well with polarization resolved experiments. Additionally, current-stressed devices are shown to emit unpolarized light due to radiative recombination inside the silicon electrode.

Engineering the Outcoupling Pathways in Plasmonic Tunnel Junctions via Photonic Mode Dispersion for Low-Loss Waveguiding

Outcoupling of plasmonic modes excited by inelastic electron tunneling (IET) across plasmonic tunnel junctions (TJs) has attracted significant attention due to low operating voltages and fast excitation rates. Achieving selectivity among various outcoupling channels, however, remains a challenging task. Employing nanoscale antennas to enhance the local density of optical states (LDOS) associated with specific outcoupling channels partially addressed the problem, along with the integration of conducting 2D materials into TJs, improving the outcoupling to guided modes with particular momentum. The disadvantage of such methods is that they often involve complex fabrication steps and lack fine-tuning options. Here, we propose an alternative approach by modifying the dielectric medium surrounding TJs. By employing a simple multilayer substrate with a specific permittivity combination for the TJs under study, we show that it is possible to optimize mode selectivity in outcoupling to a plasmonic or a photonic-like mode characterized by distinct cutoff behaviors and propagation length. Theoretical and experimental results obtained with a SiO2-SiN-glass multilayer substrate demonstrate high relative coupling efficiencies of (62.77 ± 1.74)% and (29.07 ± 0.72)% for plasmonic and photonic-like modes, respectively. The figure-of-merit, which quantifies the tradeoff between mode outcoupling and propagation lengths (tens of μm) for both modes, can reach values as high as 180 and 140. The demonstrated approach allows LDOS engineering and customized TJ device performance, which are seamlessly integrated with standard thin film fabrication protocols. Our experimental device is well-suited for integration with silicon nitride photonics platforms.

Spectral Tuning of a Nanoparticle-on-Mirror System by Graphene Doping and Gap Control with Nitric Acid

Nanoparticle-on-mirror systems are a stable, robust, and reproducible method of squeezing light into sub-nanometer volumes. Graphene is a particularly interesting material to use as a spacer in such systems as it is the thinnest possible 2D material and can be doped both chemically and electrically to modulate the plasmonic modes. We investigate a simple nanoparticle-on-mirror system, consisting of a Au nanosphere on top of an Au mirror, separated by a monolayer of graphene. With this system, we demonstrate, with both experiments and numerical simulations, how the doping of the graphene and the control of the gap size can be controlled to tune the plasmonic response of the coupled nanosphere using nitric acid. The coupling of the Au nanosphere and Au thin film reveals multipolar modes which can be tuned by adjusting the gap size or doping an intermediate graphene monolayer. At high doping levels, the interaction between the charge-transfer plasmon and gap plasmon leads to splitting of the plasmon energies. The study provides evidence for the unification of theories proposed by previous works investigating similar systems.

Electrically Driven Plasmons in Metal-Insulator-Semiconductor Tunnel Junctions: The Role of Silicon Amorphization

We investigate electrically driven plasmon (EDP) emission in metal-insulator-semiconductor tunnel junctions. We find that amorphization of the silicon crystal at a narrow region near the junction due to the applied voltage plays a critical role in determining the nature of the emission. Furthermore, we suggest that the change in the properties of the insulating layer above a threshold voltage determines the EDP spatial properties, from being spatially uniform when the device is subjected to low voltages, to a spotty pattern peaking at high voltages. We emphasize the role of the high-energy emission as an unambiguous tool for distinguishing between EDP and radiative recombination of electrons and holes in the semiconductor.

Surface Plasmon Resonance (SPR) Sensor for Cancer Biomarker Detection

A biomarker is a physiological observable marker that acts as a stand-in and, in the best-case scenario, forecasts a clinically significant outcome. Diagnostic biomarkers are more convenient and cost-effective than directly measuring the ultimate clinical outcome. Cancer is among the most prominent global health problems and a major cause of morbidity and death globally. Therefore, cancer biomarker assays that are trustworthy, consistent, precise, and verified are desperately needed. Biomarker-based tumor detection holds a lot of promise for improving disease knowledge at the molecular scale and early detection and surveillance. In contrast to conventional approaches, surface plasmon resonance (SPR) allows for the quick and less invasive screening of a variety of circulating indicators, such as circulating tumor DNA (ctDNA), microRNA (miRNA), circulating tumor cells (CTCs), lipids, and proteins. With several advantages, the SPR technique is a particularly beneficial choice for the point-of-care identification of biomarkers. As a result, it enables the timely detection of tumor markers, which could be used to track cancer development and suppress the relapse of malignant tumors. This review emphasizes advancements in SPR biosensing technologies for cancer detection.

Optical properties of plasmonic tunneling junctions

Over the last century, quantum theories have revolutionized our understanding of material properties. One of the most striking quantum phenomena occurring in heterogeneous media is the quantum tunneling effect, where carriers can tunnel through potential barriers even if the barrier height exceeds the carrier energy. Interestingly, the tunneling process can be accompanied by the absorption or emission of light. In most tunneling junctions made of noble metal electrodes, these optical phenomena are governed by plasmonic modes, i.e., light-driven collective oscillations of surface electrons. In the emission process, plasmon excitation via inelastic tunneling electrons can improve the efficiency of photon generation, resulting in bright nanoscale optical sources. On the other hand, the incident light can affect the tunneling behavior of plasmonic junctions as well, leading to phenomena such as optical rectification and induced photocurrent. Thus, plasmonic tunneling junctions provide a rich platform for investigating light-matter interactions, paving the way for various applications, including nanoscale light sources, sensors, and chemical reactors. In this paper, we will introduce recent research progress and promising applications based on plasmonic tunneling junctions.

Two-dimensional Dirac plasmon-polaritons in graphene, 3D topological insulator and hybrid systems

Collective oscillations of massless particles in two-dimensional (2D) Dirac materials offer an innovative route toward implementing atomically thin devices based on low-energy quasiparticle interactions. Strong confinement of near-field distribution on the 2D surface is essential to demonstrate extraordinary optoelectronic functions, providing means to shape the spectral response at the mid-infrared (IR) wavelength. Although the dynamic polarization from the linear response theory has successfully accounted for a range of experimental observations, a unified perspective was still elusive, connecting the state-of-the-art developments based on the 2D Dirac plasmon-polaritons. Here, we review recent works on graphene and three-dimensional (3D) topological insulator (TI) plasmon-polariton, where the mid-IR and terahertz (THz) radiation experiences prominent confinement into a deep-subwavelength scale in a novel optoelectronic structure. After presenting general light-matter interactions between 2D Dirac plasmon and subwavelength quasiparticle excitations, we introduce various experimental techniques to couple the plasmon-polaritons with electromagnetic radiations. Electrical and optical controls over the plasmonic excitations reveal the hybridized plasmon modes in graphene and 3D TI, demonstrating an intense near-field interaction of 2D Dirac plasmon within the highly-compressed volume. These findings can further be applied to invent optoelectronic bio-molecular sensors, atomically thin photodetectors, and laser-driven light sources.

Optical Anisotropy in van der Waals materials: Impact on Direct Excitation of Plasmons and Photons by Quantum Tunneling

Inelastic quantum mechanical tunneling of electrons across plasmonic tunnel junctions can lead to surface plasmon polariton (SPP) and photon emission. So far, the optical properties of such junctions have been controlled by changing the shape, or the type of the material, of the electrodes, primarily with the aim to improve SPP or photon emission efficiencies. Here we show that by tuning the tunneling barrier itself, the efficiency of the inelastic tunneling rates can be improved by a factor of 3. We exploit the anisotropic nature of hexagonal boron nitride (hBN) as the tunneling barrier material in Au//hBN//graphene tunnel junctions where the Au electrode also serves as a plasmonic strip waveguide. As this junction constitutes an optically transparent hBN-graphene heterostructure on a glass substrate, it forms an open plasmonic system where the SPPs are directly coupled to the dedicated strip waveguide and photons outcouple to the far field. We experimentally and analytically show that the photon emission rate per tunneling electron is significantly improved (~ ×3) in Au//hBN//graphene tunnel junction due to the enhancement in the local density of optical states (LDOS) arising from the hBN anisotropy. With the dedicated strip waveguide, SPP outcoupling efficiency is quantified and is found to be ∼ 80% stronger than the radiative outcoupling in Au//hBN//graphene due to the high LDOS of the SPP decay channel associated with the inelastic tunneling. The new insights elucidated here deepen our understanding of plasmonic tunnel junctions beyond the isotropic models with enhanced LDOS.

Quantum Plasmonics: Energy Transport Through Plasmonic Gap

At the interfaces of metal and dielectric materials, strong light-matter interactions excite surface plasmons; this allows electromagnetic field confinement and enhancement on the sub-wavelength scale. Such phenomena have attracted considerable interest in the field of exotic material-based nanophotonic research, with potential applications including nonlinear spectroscopies, information processing, single-molecule sensing, organic-molecule devices, and plasmon chemistry. These innovative plasmonics-based technologies can meet the ever-increasing demands for speed and capacity in nanoscale devices, offering ultrasensitive detection capabilities and low-power operations. Size scaling from the nanometer to sub-nanometer ranges is consistently researched; as a result, the quantum behavior of localized surface plasmons, as well as those of matter, nonlocality, and quantum electron tunneling is investigated using an innovative nanofabrication and chemical functionalization approach, thereby opening a new era of quantum plasmonics. This new field enables the ultimate miniaturization of photonic components and provides extreme limits on light-matter interactions, permitting energy transport across the extremely small plasmonic gap. In this review, a comprehensive overview of the recent developments of quantum plasmonic resonators with particular focus on novel materials is presented. By exploring the novel gap materials in quantum regime, the potential quantum technology applications are also searched for and mapped out.

Resonant Light Emission from Graphene/Hexagonal Boron Nitride/Graphene Tunnel Junctions

Single-layer graphene has many remarkable properties but does not lend itself as a material for light-emitting devices as a result of its lack of a band gap. This limitation can be overcome by a controlled stacking of graphene layers. Exploiting the unique Dirac cone band structure of graphene, we demonstrate twist-controlled resonant light emission from graphene/hexagonal boron nitride (h-BN)/graphene tunnel junctions. We observe light emission irrespective of the crystallographic alignment between the graphene electrodes. Nearly aligned devices exhibit pronounced resonant features in both optical and electrical characteristics that vanish rapidly for twist angles θ ≳3°. These experimental findings can be well-explained by a theoretical model in which the spectral photon emission peak is attributed to photon-assisted momentum conserving electron tunneling. The resonant peak in our aligned devices can be spectrally tuned within the near-infrared range by over 0.2 eV, making graphene/h-BN/graphene tunnel junctions potential candidates for on-chip optoelectronics.

Ultrafast Electron Tunneling Devices-From Electric-Field Driven to Optical-Field Driven

The search for ever higher frequency information processing has become an area of intense research activity within the micro, nano, and optoelectronics communities. Compared to conventional semiconductor-based diffusive transport electron devices, electron tunneling devices provide significantly faster response times due to near-instantaneous tunneling that occurs at sub-femtosecond timescales. As a result, the enhanced performance of electron tunneling devices is demonstrated, time and again, to reimagine a wide variety of traditional electronic devices with a variety of new "lightwave electronics" emerging, each capable of reducing the electron transport channel transit time down to attosecond timescales. In response to unprecedented rapid progress within this field, here the current state-of-the-art in electron tunneling devices is reviewed, current challenges and opportunities are highlighted, and possible future research directions are identified.

Plasmonic Split-Trench Resonator for Trapping and Sensing

On-chip integration of plasmonics and electronics can benefit a broad range of applications in biosensing, signal processing, and optoelectronics. A key requirement is a chip-scale manufacturing method. Here, we demonstrate a split-trench resonator platform that combines a high-quality-factor resonant plasmonic biosensor with radio frequency (RF) nanogap tweezers. The split-trench resonator can simultaneously serve as a dielectrophoretic trap and a nanoplasmonic sensor. Trapping is accomplished by applying an RF electrical bias across a 10 nm gap, thereby either attracting or repelling analytes. Trapped analytes are detected in a label-free manner using refractive-index sensing, enabled by interference between surface-plasmon standing waves in the trench and light transmitted through the gap. This active sample concentration mechanism enables detection of nanoparticles and proteins at a concentration as low as 10 pM. We can manufacture centimeter-long split-trench cavity resonators with high throughput via photolithography and atomic layer deposition, toward practical applications in biosensing, spectroscopy, and optoelectronics.

Graphene nanogaps for the directed assembly of single-nanoparticle devices

Significant advances in the synthesis of low-dimensional materials with unique and tuneable electrical, optical and magnetic properties has led to an explosion of possibilities for realising hybrid nanomaterial devices with unconventional and desirable characteristics. However, the lack of ability to precisely integrate individual nanoparticles into devices at scale limits their technological application. Here, we report on a graphene nanogap based platform which employs the large electric fields generated around the point-like, atomically sharp nanogap electrodes to capture single nanoparticles from solution at predefined locations. We demonstrate how gold nanoparticles can be trapped and contacted to form single-electron transistors with a large coupling to a buried electrostatic gate. This platform offers a route to the creation of novel low-dimensional devices, nano- and optoelectronic applications, and the study of fundamental transport phenomena.

Enhancement of the Photoresponse of Monolayer MoS2 Photodetectors Induced by a Nanoparticle Grating

Photodetectors based on two-dimensional (2D) materials such as monolayer MoS₂ are attractive because they can be directly integrated into the current metal-oxide semiconductor (CMOS) structures. Unfortunately, such devices suffer from low responsivity due to low absorption by the monolayer MoS₂. Combining MoS₂ with plasmonic nanostructures is an alternative solution for enhancing the absorption of the 2D semiconductor, and this can drastically increase the photoresponsivity of the corresponding photodetector. Herein, a device incorporating a grating-patterned nanoparticle structure is fabricated using traditional photolithography together with an annealing step. We demonstrate that this new structure leads to a strong enhancement in the photocurrent due to the coupling of the MoS₂ to localized surface plasmons in the nanoparticle grating. Compared to a simple Au nanoparticle array, the nanoparticle grating structure generates a 100% increase in optical absorption. Thus, under 532 nm illumination, the composite nanoparticle grating/monolayer MoS₂ integrated photodetector shows a 111-fold increase in the photocurrent compared to the same device in the absence of nanoparticles. The gateless responsivity can be up to 38.57 A/W and a specific detectivity of 9.89 × 10⁹ Jones is realized. Moreover, photothermal flux derivations indicate that, in addition to the expected increase due to light-generated carrier multiplication, the thermal effects of plasmons provide a significant contribution to the photocurrent enhancement.

Electrically Driven Optical Antennas Based on Template Dielectrophoretic Trapping

An electrically driven optical antenna (EDOA) provides a nanoscale light-emitting scheme that is appealing for biosensors, plasmonic displays, and on-chip optoelectronic circuits. The EDOA (consisting of metal nanoparticles (NPs)) excited by inelastic tunneling electrons has attracted broad interest due to its terahertz modulation bandwidth and microelectronics-compatible dimensions. Currently, the efficient fabrication of EDOA is hampered by the ultrasmall size of NPs and the requirement of controllable preparation. Here, we overcome this limitation by accurately positioning thiol-covered gold NPs onto predesigned electrodes using dielectrophoresis trapping. The combination of a high-quality molecule tunnel barrier and the template trapping ensures that the EDOA can operate stably in ambient conditions. More importantly, the template trapping allows fabrication of EDOA with different numbers and arrangements of NPs by controlling the size and orientation of the template. This technology provides a way to fabricate controllable optoelectronic devices based on NPs and is promising for compact and smart photonic devices.

Light from van der Waals quantum tunneling devices

The understanding of and control over light emission from quantum tunneling has challenged researchers for more than four decades due to the intricate interplay of electrical and optical properties in atomic scale volumes. Here we introduce a device architecture that allows for the disentanglement of electronic and photonic pathways—van der Waals quantum tunneling devices. The electronic properties are defined by a stack of two-dimensional atomic crystals whereas the optical properties are controlled via an external photonic architecture. In van der Waals heterostructures made of gold, hexagonal boron nitride and graphene we find that inelastic tunneling results in the emission of photons and surface plasmon polaritons. By coupling these heterostructures to optical nanocube antennas we achieve resonant enhancement of the photon emission rate in narrow frequency bands by four orders of magnitude. Our results lead the way towards a new generation of nanophotonic devices that are driven by quantum tunneling.

Electrical and optical properties of light emitting devices driven by quantum tunneling are closely intertwined. Parzefall et al. show that these properties can be individually controlled by cointegrating van der Waals heterostructures with optical antennas.

Distinguishable Plasmonic Nanoparticle and Gap Mode Properties in a Silver Nanoparticle on a Gold Film System Using Three-Dimensional FDTD Simulations

We present a computational study of the near-field enhancement properties from a plasmonic nanomaterial based on a silver nanoparticle on a gold film. Our simulation studies show a clear distinguishability between nanoparticle mode and gap mode as a function of dielectric layer thickness. The observed nanoparticle mode is independent of dielectric layer thickness, and hence its related plasmonic properties can be investigated clearly by having a minimum of ~10-nm-thick dielectric layer on a metallic film. In case of the gap mode, the presence of minimal dielectric layer thickness is crucial (~≤4 nm), as deterioration starts rapidly thereafter. The proposed simple tunable gap-based particle on film design might open interesting studies in the field of plasmonics, extreme light confinement, sensing, and source enhancement of an emitter.