Inverse Temperature Dependence of Charge Carrier Hopping in Quantum Dot Solids

Advancing Silver Bismuth Sulfide Quantum Dots for Practical Solar Cell Applications

Colloidal quantum dots (CQDs) show unique properties that distinguish them from their bulk form, the so-called quantum confinement effects. This feature manifests in tunable size-dependent band gaps and discrete energy levels, resulting in distinct optical and electronic properties. The investigation direction of colloidal quantum dots (CQDs) materials has started switching from high-performing materials based on Pb and Cd, which raise concerns regarding their toxicity, to more environmentally friendly compounds, such as AgBiS2. After the first breakthrough in solar cell application in 2016, the development of AgBiS2 QDs has been relatively slow, and many of the fundamental physical and chemical properties of this material are still unknown. Investigating the growth of AgBiS2 QDs is essential to understanding the fundamental properties that can improve this material's performance. This review comprehensively summarizes the synthesis strategies, ligand choice, and solar cell fabrication of AgBiS2 QDs. The development of PbS QDs is also highlighted as the foundation for improving the quality and performance of AgBiS2 QD. Furthermore, we prospectively discuss the future direction of AgBiS2 QD and its use for solar cell applications.

Electronic transport in quantum-dot-in-perovskite solids

We investigate theoretically the band transport of electrons and holes in a "quantum-dot-in-perovskite" solid, a periodic array of semiconductor nanocrystal quantum dots embedded in a matrix of lead halide perovskite. For concreteness we focus on PbS quantum dots passivated by inorganic halogen ligands and embedded in a matrix of CsPbI₃. We find that the halogen ligands play a decisive role in determining the band offset between the dot and matrix and may therefore provide a straightforward way to control transport experimentally. The model and analysis developed here may readily be generalized to analyze band transport in a broader class of dot-in-solid materials.

UV-vis-IR Broad Spectral Photodetectors Based on VO2-ZnO Nanocrystal Films

As a narrow band semiconductor at room temperature and a metallic material above ∼68 °C, functional VO₂ films are widely investigated for smart windows, whereas their potential for ultraviolet-visible-infrared (UV-vis-IR) broad spectral photodetectors has not been efficiently studied. In this report, photodetectors based on VO₂-ZnO nanocrystal composite films were prepared by nanocrystal-mist (NC-mist) deposition. An enhanced photodetection switching ratio was achieved covering the ultraviolet to infrared wavelength. Due to the synergetic effect of nanosize, surface, phase transition, percolation threshold, and the band structure of the heterojunction, the transfer and transport of photogenerated carriers modulate the device performance. This study probes new chances of applying VO₂-semiconductor-based nanocomposites for broad spectral photodetectors.

Spatial Patterns of Light-Harvesting Antenna Complex Arrangements Tune the Transfer-to-Trap Efficiency of Excitons in Purple Bacteria

In photosynthesis, the efficiency with which a photogenerated exciton reaches the reaction center is dictated by chromophore energies and the arrangement of chromophores in the supercomplex. Here, we explore the interplay between the arrangement of light-harvesting antennae and the efficiency of exciton transport in purple bacterial photosynthesis. Using a Miller-Abrahams-based exciton hopping model, we compare different arrangements of light-harvesting proteins on the intracytoplasmic membrane. We find that arrangements with aggregated LH1s have a higher efficiency than arrangements with randomly distributed LH1s in a wide range of physiological light fluences. This effect is robust to the introduction of defects on the intracytoplasmic membrane. Our result explains the absence of species with aggregated LH1 arrangements in low-light niches and the large increase seen in the expression of LH1 dimer complexes in high fluences. We suggest that the effect seen in our study is an adaptive strategy toward solar light fluence across different purple bacterial species.

Identification of Two Regimes of Carrier Thermalization in PbS Nanocrystal Assemblies

We bring fresh insight into the ensemble properties of PbS colloidal quantum dots with a critical review of the literature on semiconductors followed by systematic comparisons between steady-state photocurrent and photoluminescence measurements. Our experiments, performed with sufficiently low powers to neglect nonlinear effects, indicate that the photoluminescence spectra have no other noticeable contribution beside the radiative recombination of thermalized photocarriers (i.e., photocarriers in thermodynamic quasi-equilibrium). A phenomenological model based on the local Kirchhoff law is proposed that makes it possible to identify the nature of the thermalized photocarriers and to extract their temperatures from the measurements. Two regimes are observed: For highly compact assemblies of PbS quantum dots stripped from organic ligands, the thermalization concerns photocarriers distributed over a wide energy range. With PbS quantum dots cross-linked with 1,2-ethanedithiol or longer organic ligand chains, the thermalization concerns solely the fundamental exciton and can quantitatively explain all the observations, including the precise Stokes shift between the absorbance and luminescence maxima.

Materials Design and Optimization for Next-Generation Solar Cell and Light-Emitting Technologies

We review some of the most potent directions in the design of materials for next-generation solar cell and light-emitting technologies that go beyond traditional solid-state inorganic semiconductor-based devices, from both the experimental and computational standpoints. We focus on selected recent conceptual advances in tackling issues which are expected to significantly impact applied literature in the coming years. Specifically, we consider solution processability, design of dopant-free charge transport materials, two-dimensional conjugated polymeric semiconductors, and colloidal quantum dot assemblies in the fields of experimental synthesis, characterization, and device fabrication. Key modeling issues that we consider are calculations of optical properties and of effects of aggregation, including recent advances in methods beyond linear-response time-dependent density functional theory and recent insights into the effects of correlation when going beyond the single-particle ansatz as well as in the context of modeling of thermally activated fluorescence.

Low-Temperature Induced Enhancement of Photoelectric Performance in Semiconducting Nanomaterials

The development of light-electricity conversion in nanomaterials has drawn intensive attention to the topic of achieving high efficiency and environmentally adaptive photoelectric technologies. Besides traditional improving methods, we noted that low-temperature cooling possesses advantages in applicability, stability and nondamaging characteristics. Because of the temperature-related physical properties of nanoscale materials, the working mechanism of cooling originates from intrinsic characteristics, such as crystal structure, carrier motion and carrier or trap density. Here, emerging advances in cooling-enhanced photoelectric performance are reviewed, including aspects of materials, performance and mechanisms. Finally, potential applications and existing issues are also summarized. These investigations on low-temperature cooling unveil it as an innovative strategy to further realize improvement to photoelectric conversion without damaging intrinsic components and foresee high-performance applications in extreme conditions.

Colloidal Synthesis Path to 2D Crystalline Quantum Dot Superlattices

By combining colloidal nanocrystal synthesis, self-assembly, and solution phase epitaxial growth techniques, we developed a general method for preparing single dot thick atomically attached quantum dot (QD) superlattices with high-quality translational and crystallographic orientational order along with state-of-the-art uniformity in the attachment thickness. The procedure begins with colloidal synthesis of hexagonal prism shaped core/shell QDs (e.g., CdSe/CdS), followed by liquid subphase self-assembly and immobilization of superlattices on a substrate. Solution phase epitaxial growth of additional semiconductor material fills in the voids between the particles, resulting in a QD-in-matrix structure. The photoluminescence emission spectra of the QD-in-matrix structure retains characteristic 0D electronic confinement. Importantly, annealing of the resulting structures removes inhomogeneities in the QD-QD inorganic bridges, which our atomistic electronic structure calculations demonstrate would otherwise lead to Anderson-type localization. The piecewise nature of this procedure allows one to independently tune the size and material of the QD core, shell, QD-QD distance, and the matrix material. These four choices can be tuned to control many properties (degree of quantum confinement, quantum coupling, band alignments, etc.) depending on the specific applications. Finally, cation exchange reactions can be performed on the final QD-in-matrix, as demonstrated herein with a CdSe/CdS to HgSe/HgS conversion.

The role of ligands in electron transport in nanocrystal solids

We investigate theoretically the transport of electrons and holes in crystalline solids consisting of three-dimensional arrays of semiconductor nanocrystals passivated by two types of organic ligands-linear chain carboxylates and functionalized aromatic cinnamates. We focus on a critical quantity in transport: the quantum-mechanical overlap of the strongly confined electron and hole wavefunctions on neighboring nanocrystals. Using results from density-functional-theory (DFT) calculations, we construct a one-dimensional model system whose analytic wavefunctions reproduce the full DFT numerical overlap values. By investigating the analytic behavior of this model, we reveal several important features of electron transport. The most significant is that the wavefunction overlap decays exponentially with ligand length, with a characteristic decay length that depends primarily on properties of the ligand and is almost independent of the size and type of nanocrystal. Functionalization of the ligands can also affect the overlap by changing the height of the tunneling barrier. The physically transparent analytic expressions we obtain for the wavefunction overlap and its decay length should be useful for future efforts to control transport in nanocrystal solids.

Manipulating Electronic Structure from the Bottom-Up: Colloidal Nanocrystal-Based Semiconductors

Semiconductors assembled from colloidal nanocrystals (NCs) are often described in the same terms as their single-crystalline counterparts with references to conduction and valence band edges, doping densities, and electronic defects; however, how and why semiconductor properties manifest in these bottom-up fabricated thin films can be fundamentally different. In this Perspective, we describe the factors that determine the electronic structure in colloidal NC-based semiconductors, and comment on approaches for measuring or calculating this electronic structure. Finally, we discuss future directions for these semiconductors and highlight their potential to bridge the divide between localized quantum effects and long-range transport in thin films.

Charge transport in semiconductors assembled from nanocrystal quantum dots

The potential of semiconductors assembled from nanocrystals has been demonstrated for a broad array of electronic and optoelectronic devices, including transistors, light emitting diodes, solar cells, photodetectors, thermoelectrics, and phase change memory cells. Despite the commercial success of nanocrystal quantum dots as optical absorbers and emitters, applications involving charge transport through nanocrystal semiconductors have eluded exploitation due to the inability to predictively control their electronic properties. Here, we perform large-scale, ab initio simulations to understand carrier transport, generation, and trapping in strongly confined nanocrystal quantum dot-based semiconductors from first principles. We use these findings to build a predictive model for charge transport in these materials, which we validate experimentally. Our insights provide a path for systematic engineering of these semiconductors, which in fact offer previously unexplored opportunities for tunability not achievable in other semiconductor systems.

In Situ Growth of All-Inorganic Perovskite Single Crystal Arrays on Electron Transport Layer

Directly growing perovskite single crystals on charge carrier transport layers will unravel a promising route for the development of emerging optoelectronic devices. Herein, in situ growth of high-quality all-inorganic perovskite (CsPbBr3) single crystal arrays (PeSCAs) on cubic zinc oxide (c-ZnO) is reported, which is used as an inorganic electron transport layer in optoelectronic devices, via a facile spin-coating method. The PeSCAs consist of rectangular thin microplatelets of 6-10 µm in length and 2-3 µm in width. The deposited c-ZnO enables the formation of phase-pure and highly crystallized cubic perovskites via an epitaxial lattice coherence of (100)CsPbBr3∥(100)c-ZnO, which is further confirmed by grazing incidence wide-angle X-ray scattering. The PeSCAs demonstrate a significant structural stability of 26 days with a 9 days excellent photoluminescence stability in ambient environment, which is much superior to the perovskite nanocrystals (PeNCs). The high crystallinity of the PeSCAs allows for a lower density of trap states, longer carrier lifetimes, and narrower energetic disorder for excitons, which leads to a faster diffusion rate than PeNCs. These results unravel the possibility of creating the interface toward c-ZnO heterogeneous layer, which is a major step for the realization of a better integration of perovskites and charge carrier transport layers.

A time-domain view of charge carriers in semiconductor nanocrystal solids

The movement of charge carriers within semiconductor nanocrystal solids is fundamental to the operation of nanocrystal devices, including solar cells, LEDs, lasers, photodetectors, and thermoelectric modules. In this perspective, we explain how recent advances in the measurement and simulation of charge carrier dynamics in nanocrystal solids have led to a more complete picture of mesoscale interactions. Specifically, we show how time-resolved optical spectroscopy and transient photocurrent techniques can be used to track both equilibrium and non-equilibrium dynamics in nanocrystal solids. We discuss the central role of energetic disorder, the impact of trap states, and how these critical parameters are influenced by chemical modification of the nanocrystal surface. Finally, we close with a forward-looking assessment of emerging nanocrystal systems, including anisotropic nanocrystals, such as nanoplatelets, and colloidal lead halide perovskites.

Theoretical Bounds on Electron Energy Filtering in Disordered Nanomaterials

Electron energy filters have recently been proposed as a method of reducing the effects of thermal broadening in device and sensing applications, enabling substantial improvements in their room temperature performance. Nanostructured materials can act as electron energy filters by funneling thermally broadened electrons through discrete energy levels. In this study, we develop a theoretical model of the electron filtering properties of nanostructured materials that explicitly includes the effects of thermal broadening and size heterogeneity on the heterogeneity of nanostructure energy levels. We find that under certain conditions quantum dot solids can perform as effective electronic energy filters. We identify a material-specific length scale parameter, L_crit, that specifies the maximum mean quantum dot size that can yield effective energy filtering. Moreover, we show that energy filtering materials composed of quantum dots with size near L_crit are maximally robust to heterogeneity in quantum dot size, tolerating variations ∼10% of the mean size. The length scale L_crit can be estimated directly from the widely tabulated density of states effective mass and shows that semiconductors with light conduction band electrons, such as III-V type materials InSb and GaAs, are the most forgiving for energy filtering applications. Taken together, these results provide a practical set of quantitative design principles for semiconductor electron filters.

Setting Carriers Free: Healing Faulty Interfaces Promotes Delocalization and Transport in Nanocrystal Solids

Superlattices of epitaxially connected nanocrystals (NCs) are model systems to study electronic and optical properties of NC arrays. Using elemental analysis and structural analysis by in situ X-ray fluorescence and grazing-incidence small-angle scattering, respectively, we show that epitaxial superlattices of PbSe NCs keep their structural integrity up to temperatures of 300 °C; an ideal starting point to assess the effect of gentle thermal annealing on the superlattice properties. We find that annealing such superlattices between 75 and 150 °C induces a marked red shift of the NC band-edge transition. In fact, the post-annealing band-edge reflects theoretical predictions on the impact of charge carrier delocalization in these epitaxial superlattices. In addition, we observe a pronounced enhancement of the charge carrier mobility and a reduction of the hopping activation energy after mild annealing. While the superstructure remains intact at these temperatures, structural defect studies through X-ray diffraction indicate that annealing markedly decreases the density of point defects and edge dislocations. This indicates that the connections between NCs in as-synthesized superlattices still form a major source of grain boundaries and defects, which prevent carrier delocalization over multiple NCs and hamper NC-to-NC transport. Overcoming the limitations imposed by interfacial defects is therefore an essential next step in the development of high-quality optoelectronic devices based on NC solids.

Nanocrystal superlattices as phonon-engineered solids and acoustic metamaterials

Phonon engineering of solids enables the creation of materials with tailored heat-transfer properties, controlled elastic and acoustic vibration propagation, and custom phonon-electron and phonon-photon interactions. These can be leveraged for energy transport, harvesting, or isolation applications and in the creation of novel phonon-based devices, including photoacoustic systems and phonon-communication networks. Here we introduce nanocrystal superlattices as a platform for phonon engineering. Using a combination of inelastic neutron scattering and modeling, we characterize superlattice-phonons in assemblies of colloidal nanocrystals and demonstrate that they can be systematically engineered by tailoring the constituent nanocrystals, their surfaces, and the topology of superlattice. This highlights that phonon engineering can be effectively carried out within nanocrystal-based devices to enhance functionality, and that solution processed nanocrystal assemblies hold promise not only as engineered electronic and optical materials, but also as functional metamaterials with phonon energy and length scales that are unreachable by traditional architectures.

Controlling Superstructure-Property Relationships via Critical Casimir Assembly of Quantum Dots

The assembly of colloidal quantum dots (QDs) into dense superstructures holds great promise for the development of novel optoelectronic devices. Several assembly techniques have been explored; however, achieving direct and precise control over the interparticle potential that controls the assembly has proven to be challenging. Here, we exploit the application of critical Casimir forces to drive the growth of QDs into superstructures. We show that the exquisite temperature-dependence of the critical Casimir potential offers new opportunities to control the assembly process and morphology of the resulting QD superstructures. The direct assembly control allows us to elucidate the relation between structural, optical, and conductive properties of the critical Casimir-grown QD superstructures. We find that the choice of the temperature setting the interparticle potential plays a central role in maximizing charge percolation across QD thin-films. These results open up new directions for controlling the assembly of nanostructures and their optoelectronic properties.

Structure and Charge Carrier Dynamics in Colloidal PbS Quantum Dot Solids

The ligand exchange process is a key step in fabrications of quantum dot (QD) optoelectronic devices. In this work, on the basis of grazing incidence X-ray scattering techniques, we find that the ligand exchange process with halide ions changes the PbS QD superlattice from face-centered-cubic to body-centered-cubic stacking, while the QD crystal lattice orientation also changes from preferentially "edge-up" to "corner-up". Thus, the QDs' shape is supposed to be the main factor for the alignment of QDs in close packed solids. Moreover, we tailor the alignment of the close packed solids by thermal treatments and further investigate their inner charge carrier dynamics by pump-probe transient absorption experiments. An overall better structure alignment optimizes the charge carrier hopping rate, as confirmed by the time dependence of the photon bleaching peak shift. The QD solid treated at 100 °C shows the best inner structure alignment with the best charge carrier hopping rate.

Electroluminescence Generation in PbS Quantum Dot Light-Emitting Field-Effect Transistors with Solid-State Gating

The application of light-emitting field-effect transistors (LEFET) is an elegant way of combining electrical switching and light emission in a single device architecture instead of two. This allows for a higher degree of miniaturization and integration in future optoelectronic applications. Here, we report on a LEFET based on lead sulfide quantum dots processed from solution. Our device shows state-of-the-art electronic behavior and emits near-infrared photons with a quantum yield exceeding 1% when cooled. We furthermore show how LEFETs can be used to simultaneously characterize the optical and electrical material properties on the same device and use this benefit to investigate the charge transport through the quantum dot film.

Picosecond Charge Transfer and Long Carrier Diffusion Lengths in Colloidal Quantum Dot Solids

Quantum dots (QDs) are promising candidates for solution-processed thin-film optoelectronic devices. Both the diffusion length and the mobility of photoexcited charge carriers in QD solids are critical determinants of solar cell performance; yet various techniques offer diverse values of these key parameters even in notionally similar films. Here we report diffusion lengths and interdot charge transfer rates using a 3D donor/acceptor technique that directly monitors the rate at which photoexcitations reach small-bandgap dot inclusions having a known spacing within a larger-bandgap QD matrix. Instead of relying on photoluminescence (which can be weak in strongly coupled QD solids), we use ultrafast transient absorption spectroscopy, a method where sensitivity is undiminished by exciton dissociation. We measure record diffusion lengths of ∼300 nm in metal halide exchanged PbS QD solids that have led to power conversion efficiencies of 12%, and determine 8 ps interdot hopping of carriers following photoexcitation, among the fastest rates reported for PbS QD solids. We also find that QD solids composed of smaller QDs ( d = ∼3.2 nm) exhibit 5 times faster interdot charge transfer rates and 10 times lower trap state densities compared to larger ( d = ∼5.5 nm) QDs.

Quantum Dot Solar Cells: Small Beginnings Have Large Impacts

From a niche field over 30 years ago, quantum dots (QDs) have developed into viable materials for many commercial optoelectronic devices. We discuss the advancements in Pb-based QD solar cells (QDSCs) from a viewpoint of the pathways an excited state can take when relaxing back to the ground state. Systematically understanding the fundamental processes occurring in QDs has led to improvements in solar cell efficiency from ~3% to over 13% in 8 years. We compile data from ~200 articles reporting functioning QDSCs to give an overview of the current limitations in the technology. We find that the open circuit voltage limits the device efficiency and propose some strategies for overcoming this limitation.