Ultrafast Energy Dissipation via Coupling with Internal and External Phonons in Two-Dimensional MoS2

Strain engineering of the mechanical properties of two-dimensional WS2

Tuning the physical properties of two-dimensional (2D) materials is crucial for their successful integration into advanced applications. While strain engineering demonstrated an efficient means to modulate the electrical and optical properties of 2D materials, tuning their mechanical properties has not been carried out. Here we applied compressive strain through the buckling metrology to 2D tungsten disulfide (WS2), which demonstrated mechanical softening manifested by the reduction of its effective Young's modulus. Raman modes analysis of the strained WS2 also showed strain-dependent vibrational modes softening and revealed its Grüneisen parameter (γ E2g = 0.29) and its shear deformation potential (β E2g = 0.56) - both are similar to the values of other 2D materials. In parallel, we conducted a molecular dynamic simulation that confirmed the validity of continuum mechanics modeling in the nanoscale and revealed that due to sequential atomic-scale buckling events in compressed WS2, it shows a mechanical softening. Therefore, by tuning the mechanical properties of WS2 we shed light on its fundamental physics, thus making it an attractive candidate material for high-end applications, such as tunable sensors and flexible optoelectronic devices.

Modulating Carrier Dynamics in PdSe2: The Role of Pressure in Electronic and Phononic Interactions

PdSe2 is a puckered transition metal dichalcogenide that has been reported to undergo a two-dimensional to three-dimensional structural transition under pressure. Here, we investigated the electronic and phononic evolution of PdSe2 under high pressure using pump-probe spectroscopy. We observed the electronic intraband and interband transitions occurring in the d orbitals of Pd, revealing the disappearance of the Jahn-Teller effect under high pressure. Furthermore, we found that the decay rates of interband recombination and intraband relaxation lifetimes change at 3 and 7 GPa, respectively. First-principles calculations suggest that the bandgap closure slows the decay rate of interband recombination after 3 GPa, while the saturation of phonon-phonon scattering is the main reason for the relatively constant intraband relaxation lifetime. Our work provides a novel perspective for understanding the evolution of the electron and modulation of the carrier dynamics by phonons under pressure.

Unveiling Spatiotemporal Diffusion of Hot Carriers Influenced by Spatial Nonuniform Hot Phonon Bottleneck Effect in Monolayer MoS2

The exceptional semiconducting properties of two-dimensional (2D) transition metal dichalcogenides (TMDs) have made them highly promising for the development of future electronic and optoelectronic devices. Extensive studies of TMDs are partly associated with their ability to generate 2D-confined hot carriers above the conduction band edges, enabling potential applications that rely on such transient excited states. In this work, room-temperature spatiotemporal hot carrier dynamics in monolayer MoS2 is studied by transient absorption microscopy (TAM), featuring an initial ultrafast expansion followed by a rapid negative diffusion, and ultimately a slow long-term expansion of the band edge C-excitons. We provide direct experimental evidence to identify the abnormal negative diffusion process as a spatial contraction of the hot carriers resulting from spatial variation in the hot phonon bottleneck effect due to the Gaussian intensity distribution of the pump laser beam.

Ultrafast Dynamics of Bloch Surface Wave Polaritons in Large-Area 2D Semiconductor Monolayers at Room Temperature

The dynamics of strongly coupled polariton systems integrated with 2D transition metal dichalcogenides (TMDs) is key to enabling efficient coherent processes and achieving high-performance TMD-based polaritonic devices, such as ultralow-threshold polariton lasers and ultrafast optical switches. However, there has been a lack of a comprehensive understanding of the excited state dynamics in TMD-based polariton systems. In this work, ultrafast pump-probe optical spectroscopy is used to investigate the room temperature dynamics of the polariton systems consisting of TMD monolayer excitons strongly coupled with Bloch surface waves (BSWs) supported by all-dielectric photonic structures. The transient response is found for both above-exciton energy pumping and polariton-resonant pumping. The excited state population and ultrafast coherent coupling of the exciton reservoir and lower polariton (LP) branch are observed for resonant pumping. Moreover, it is found that the transient response of the LP first decays on a short-time scale of 0.15-0.25 ps compared to the calculated intrinsic lifetime of 0.11-0.20 ps, and is followed by a longer decay (>100 ps) due to the dynamical evolution of the exciton reservoir. The results provide a fundamental understanding of the dynamics of TMD-based polariton systems while showing the potential for achieving efficient coherent optical processes for device applications.

Thickness-dependent electronic relaxation dynamics in solution-phase redox-exfoliated MoS2 heterostructures

Electronic relaxation dynamics of solution-phase redox-exfoliated molybdenum disulfide (MoS2) monolayer and multilayer ensembles are described. MoS2 was exfoliated using polyoxometalate (POM) reductants. This process yields a colloidal heterostructure consisting of MoS2 2D sheet multilayers with surface-bound POM complexes. Using two-dimensional electronic spectroscopy, transient bleaching and photoinduced absorption signals were detected at excitation/detection energies of 1.82/1.87 and 1.82/1.80 eV, respectively. Approximate 100-fs bandgap renormalization (BGR) and subsequent defect- and phonon-mediated relaxation on the picosecond timescale were resolved for several MoS2 thicknesses spanning from 1 to 2 L to ∼20 L. BGR rates were independent of sample thickness and slightly slower than observations for chemical vapor deposition-grown MoS2 monolayers. However, defect-mediated relaxation accelerated ∼10-fold with increased sample thicknesses. The relaxation rates increased from 0.33 ± 0.05 to 1.2 ± 0.1 and 3.1 ± 0.4 ps-1 for 1-2 L, 3-4 L, and 20 L fractions. The thicknesses-dependent relaxation rates for POM-MoS2 heterostructures were modeled using a saturating exponential function that showed saturation at thirteen MoS2 layers. The results suggest that the increased POM surface coverage leads to larger defect density in the POM-MoS2 heterostructure. These are the first descriptions of the influence of sample thickness on electronic relaxation rates in solution-phase redox-exfoliated POM-MoS2 heterostructures. Outcomes of this work are expected to impact the development of solution-phase exfoliation of 2D metal-chalcogenide heterostructures.

Long lived photogenerated charge carriers in few-layer transition metal dichalcogenides obtained from liquid phase exfoliation

Semiconducting transition metal dichalcogenides are important optoelectronic materials thanks to their intense light-matter interaction and wide selection of fabrication techniques, with potential applications in light harvesting and sensing. Crucially, these applications depend on the lifetimes and recombination dynamics of photogenerated charge carriers, which have primarily been studied in monolayers obtained from labour-intensive mechanical exfoliation or costly chemical vapour deposition. On the other hand, liquid phase exfoliation presents a high throughput and cost-effective method to produce dispersions of mono- and few-layer nanosheets. This approach allows for easy scalability and enables the subsequent processing and formation of macroscopic films directly from the liquid phase. Here, we use transient absorption spectroscopy and spatiotemporally resolved pump-probe microscopy to study the charge carrier dynamics in tiled nanosheet films of MoS2 and WS2 deposited from the liquid phase using an adaptation of the Langmuir-Schaefer technique. We find an efficient photogeneration of charge carriers with lifetimes of several nanoseconds, which we ascribe to stabilisation at nanosheet edges. These findings provide scope for photocatalytic and photodetector applications, where long-lived charge carriers are crucial, and suggest design strategies for photovoltaic devices.

Monolayer-like Exciton Recombination Dynamics of Multilayer MoSe2 Observed by Pump-Probe Microscopy

Transition metal dichalcogenides (TMDCs) have garnered considerable interest over the past decade as a class of semiconducting layered materials. Most studies on the carrier dynamics in these materials have focused on the monolayer due to its direct bandgap, strong photoluminescence, and strongly bound excitons. However, a comparative understanding of the carrier dynamics in multilayer (e.g., >10 layers) flakes is still absent. Recent computational studies have suggested that excitons in bulk TMDCs are confined to individual layers, leading to room-temperature stable exciton populations. Using this new context, we explore the carrier dynamics in MoSe2 flakes that are between ∼16 and ∼125 layers thick. We assign the kinetics to exciton-exciton annihilation (EEA) and Shockley-Read-Hall recombination of free carriers. Interestingly, the average observed EEA rate constant (0.003 cm2/s) is nearly independent of flake thickness and 2 orders of magnitude smaller than that of an unencapsulated monolayer (0.33 cm2/s) but very similar to values observed in encapsulated monolayers. Thus, we posit that strong intralayer interactions minimize the effect of layer thickness on recombination dynamics, causing the multilayer to behave like the monolayer and exhibit an apparent EEA rate intrinsic to MoSe2.

Determining Band Splitting and Spin-Flip Dynamics in Monolayer MoS2

Femtosecond helicity-resolved pump-probe spectroscopy is performed to study the spin and valley dynamics in monolayer (ML) MoS2. Both the bright to dark intravalley exciton transition (∼50 fs) and the reverse transition process (<50 fs) are directly monitored. It suggests that the bright exciton state of ML MoS2 is lower in energy than the dark one, which is also confirmed by observing the temperature-dependent co-polarized photobleaching dynamics of A and B excitons. Furthermore, the band splitting in the conduction band of ML MoS2 with a value of 15 ± 0.3 meV is determined by fitting the temperature-dependent ratios of the population in bright and dark states using the Boltzmann distribution law. Such minor band splitting allows the phonon-mediated intravalley spin-flip to even occur from the lower to the upper conduction band within tens of femtoseconds, which will have non-negligible effects on the performance of these ML MoS2-based optoelectronic and photonic devices.

Probing the Formation of Dark Interlayer Excitons via Ultrafast Photocurrent

Optically dark excitons determine a wide range of properties of photoexcited semiconductors yet are hard to access via conventional time-resolved spectroscopies. Here, we develop a time-resolved ultrafast photocurrent technique (trPC) to probe the formation dynamics of optically dark excitons. The nonlinear nature of the trPC makes it particularly sensitive to the formation of excitons occurring at the femtosecond time scale after the excitation. As a proof of principle, we extract the interlayer exciton formation time of 0.4 ps at 160 μJ/cm2 fluence in a MoS2/MoSe2 heterostructure and show that this time decreases with fluence. In addition, our approach provides access to the dynamics of carriers and their interlayer transport. Overall, our work establishes trPC as a technique to study dark excitons in various systems that are hard to probe by other approaches.

Hot Carrier Cooling and Trapping in Atomically Thin WS2 Probed by Three-Pulse Femtosecond Spectroscopy

Transition metal dichalcogenides (TMDs) have shown outstanding semiconducting properties which make them promising materials for next-generation optoelectronic and electronic devices. These properties are imparted by fundamental carrier-carrier and carrier-phonon interactions that are foundational to hot carrier cooling. Recent transient absorption studies have reported ultrafast time scales for carrier cooling in TMDs that can be slowed at high excitation densities via a hot-phonon bottleneck (HPB) and discussed these findings in the light of optoelectronic applications. However, quantitative descriptions of the HPB in TMDs, including details of the electron-lattice coupling and how cooling is affected by the redistribution of energy between carriers, are still lacking. Here, we use femtosecond pump-push-probe spectroscopy as a single approach to systematically characterize the scattering of hot carriers with optical phonons, cold carriers, and defects in a benchmark TMD monolayer of polycrystalline WS₂. By controlling the interband pump and intraband push excitations, we observe, in real-time (i) an extremely rapid "intrinsic" cooling rate of ∼18 ± 2.7 eV/ps, which can be slowed with increasing hot carrier density, (ii) the deprecation of this HPB at elevated cold carrier densities, exposing a previously undisclosed role of the carrier-carrier interactions in mediating cooling, and (iii) the interception of high energy hot carriers on the subpicosecond time scale by lattice defects, which may account for the lower photoluminescence yield of TMDs when excited above band gap.

Charge Mobility and Strain Engineering in Two-Step MS-Grown MoS2/Seed Layer Heterointerface and Photo-Excitation Mechanism

Two-dimensional (2D) materials have potential application and wide development prospects in photoelectron and spintronic devices. However, the properties of different growth conditions are challenging to study in the future. This, in turn, hinders further research into 2D materials and the manufacture of high-quality devices. A comprehensive understanding of the ultrafast laser spectroscopy and dynamics that take into account the substrate-transition metal dichalcogenide (TMD) interaction is lacking. Here, the strain effect is elucidated by systematically investigating the interfacial interaction between different substrates and MoS₂. The strain and interface engineering of MoS₂/seeds layer heterointerface and light-matter coupling are discussed in the Raman and photoluminescence spectra. The dramatic enhanced PL originates from the phase transition of MoS₂ on different substrates and electron-hole pairs dissociated by exciton screening effect. Finite-difference time-domain simulation confirmed that the electric field, magnetic field, and polarization field of the heterojunction system changed after the strain was applied. In addition, based on the dependence of physical parameters of MoS₂, the relative numerical changes of physical parameters of MoS₂ films on different substrates as well as the photoelectric transfer, strain, and charge doping levels on the surface or interface will provide a direction for optimizing the selection of various devices.

Charge Carrier Dynamics in Colloidally Synthesized Monolayer MoX2 Nanosheets

Transition metal dichalcogenides (TMDs) are nanostructured semiconductors with prospects in optoelectronics and photocatalysis. Several bottom-up procedures to synthesize such materials have been developed yielding colloidal transition metal dichalcogenides (c-TMDs). Where such methods initially yielded multilayered sheets with indirect band gaps, recently, also the formation of monolayered c-TMDs became possible. Despite these advances, no clear picture on the charge carrier dynamics in monolayer c-TMDs exists to date. Here, we show through broadband and multiresonant pump-probe spectroscopy, that the carrier dynamics in monolayer c-TMDs are dominated by a fast electron trapping mechanism, universal to both MoS₂ and MoSe₂, contrasting hole-dominated trapping in their multilayered counterparts. Through a detailed hyperspectral fitting procedure, sizable exciton red shifts are found and assigned to static shifts originating from both interactions with the trapped electron population and lattice heating. Our results pave the way to optimizing monolayer c-TMDs via passivation of predominantly the electron-trap sites.

Anomalous Dynamics of Defect-Assisted Phonon Recycling in Few-Layer Mo0.5W0.5S2

Alloying has emerged as a new strategy to tune the function of 2D transition metal dichalcogenides (TMDCs). However, the lack of research on the electrical and structural properties of these alloys limits their practical applications. Here, femtosecond transient absorption spectroscopy with pump pulse tunability is performed to elucidate the ultrafast carrier dynamics in the few-layer Mo_0.5W_0.5S₂ prepared by the liquid phase exfoliation method. An anomalous rebleaching of the ground state is observed at high pump fluence by 3.1 eV excitation. We ascribe this rebleaching of the ground state to the mechanism that the carriers trapped in the defect are thermally excited back to the untrapped exciton state due to the phonon recycling, which hinders the dissipation of nonradiative energy, through comparative experiments and global analysis. Our findings demonstrate a novel energy transfer channel assisted by defect in few-layer TMDCs which is critical for their advanced applications.

Electron-phonon interaction and ultrafast photoemission from doped monolayer MoS2

We have examined the effect of electron-phonon coupling on photoluminescence and ultrafast response of electron doped monolayer MoS₂, using a combination of density functional theory, time dependent density functional theory, and many-body theory. For small doping (∼1-3%) of interest here, the electron-phonon coupling parameter is modest (∼0.1-0.2) but its effect on the emissive properties and response of the system to femtosecond (fs) laser pulses is striking. We find an ultrafast (fs) relaxation of the electronic subsystem as well as a high fluence of visible light emission induced by electron phonon interaction. Together with high carrier mobility, these features of monolayer MoS₂ may be relevant for optoelectronic technologies.

Spatially isolated neutral excitons via clusters on trilayer MoS2

In spite of having a large exciton binding energy, two-dimensional (2D) transition metal dichalcogenides (TMDs) are limited as light-emitting materials because the spectral weight of neutral excitons decreases exponentially with increasing the excitation density. That is, neutral excitons easily transfer to trions, and exciton-exciton annihilation (EEA) occurs due to the strengthening of exciton kinetic energy in the layered structure. In here, we come up with an isolated neutral exciton system, maintaining its high spectral weight when the carrier density increased, which is achieved via MoS₂ clusters on a MoS₂ trilayer directly synthesized by metal-organic chemical vapor deposition (MOCVD). While increasing the excitation density, trions are decomposed by spatial confinement at the saturation level of its full width at half maximum (FWHM), and simultaneously the spectral weight of neutral excitons restarts to increase. Furthermore, we reveal the causality relationship between trions and B excitons, providing a keen insight into organic interactions among radiative recombination processes in 2D TMDs.

Stable Bismuth-Doped Lead Halide Perovskite Core-Shell Nanocrystals by Surface Segregation Effect

Lead halide perovskite nanocrystals (NCs) exhibit excellent optoelectronic performance, however, the broad application is limited by their poor stability. Herein, a strategy for stable core-shell structured bismuth-doped lead halide perovskite NCs is reported. The stable core-shell perovskite NCs are prepared based on heterovalent substitutions and surface segregation effect. Core-shell features are revealed through advanced characterization and structure analyses. Meanwhile, the transfer of carriers between the core and the shell is observed by ultrafast transient absorption spectroscopy. The core-shell structured perovskite NCs exhibit outstanding structure stability and retain 97% of the original photocatalytic efficiency after cycle experiments under moisture ambient and light irradiation. Such a core-shell structure constructs gradient energy levels. These findings are expected to facilitate the development of stable lead halide perovskite devices.

Probing Electronic States in Monolayer Semiconductors through Static and Transient Third-Harmonic Spectroscopies

Electronic states and their dynamics are of critical importance for electronic and optoelectronic applications. Here, various relevant electronic states in monolayer MoS₂ , such as multiple excitonic Rydberg states and free-particle energy bands are probed with a high relative contrast of up to ≥200 via broadband (from ≈1.79 to 3.10 eV) static third-harmonic spectroscopy (THS), which is further supported by theoretical calculations. Moreover, transient THS is introduced to demonstrate that third-harmonic generation can be all-optically modulated with a modulation depth exceeding ≈94% at ≈2.18 eV, providing direct evidence of dominant carrier relaxation processes associated with carrier-exciton and carrier-phonon interactions. The results indicate that static and transient THS are not only promising techniques for the characterization of monolayer semiconductors and their heterostructures, but also a potential platform for disruptive photonic and optoelectronic applications, including all-optical modulation and imaging.

Plasmon-Mediated 2D/2D Phase Junction for Improved Photocatalytic Hydrogen Generation Activity

A phase junction fabricated by two crystalline phases of the same semiconductor is a promising photocatalyst with efficient charge transfer and separation. However, the weak light absorption and uncontrolled phase junction interface limit the generation and separation of photogenerated carriers. Herein, a two-dimensional (2D)/2D phase junction was prepared by growing orthorhombic WO₃ ultrathin nanosheets on hexagonal WO₃ nanosheets through a one-step hydrothermal method. The orthorhombic/hexagonal WO₃ possesses large-area phase junction interfaces, rich reactive sites, and built-in electric field, which greatly accelerate the photogenerated charge separation and transfer. Thus, the orthorhombic/hexagonal WO₃ displayed excellent photocatalytic hydrogen generation activity from water splitting under light irradiation (λ > 420 nm), which is 2.16 and 2.85 times those of orthorhombic and hexagonal WO₃ phase components. Furthermore, Au nanoparticles (about 4.5 nm in diameter) were deposited on both orthorhombic and hexagonal WO₃ nanosheets to form a plasmon-mediated phase junction. The hybrids exhibit prominent visible-light absorption and efficient charge transfer, leading to a further improved photocatalytic hydrogen generation activity. Further characterization studies demonstrate that superior photoactivity arises from the excellent visible-light-harvesting ability, appropriate band structure, and high-efficiency and multichannel transferring processes of photogenerated carriers.

Anomalous strain effect on the thermal conductivity of low-buckled two-dimensional silicene

The thermal conductivity of two-dimensional materials, such as graphene, typically decreases when tensile strain is applied, which softens their phonon modes. Here, we report an anomalous strain effect on the thermal conductivity of monolayer silicene, a representative low-buckled two-dimensional (LB-2D) material. ReaxFF-based molecular dynamics simulations are performed to show that biaxially stretched monolayer silicene exhibits a remarkable increase in thermal conductivity, by as much as 10 times the freestanding value, with increasing applied strain in the range of [0, 0.1], which is attributed to increased contributions from long-wavelength phonons. A further increase in strain in the range of [0.11, 0.18] results in a plateau of the thermal conductivity in an oscillatory manner, governed by a unique dynamic bonding behavior under extreme loading. This anomalous effect reveals new physical insights into the thermal properties of LB-2D materials and may provide some guidelines for designing heat management and energy conversion devices based on such materials.

Role of Femtosecond Pulsed Laser-Induced Atomic Redistribution in Bimetallic Au-Pd Nanorods on Optoelectronic and Catalytic Properties

Utilizing solar energy for chemical transformations has attracted a growing interest in promoting the clean and modular chemical synthesis approach and addressing the limitations of conventional thermocatalytic systems. Under light irradiation, noble metal nanoparticles, particularly those characterized by localized surface plasmon resonance, commonly known as plasmonic nanoparticles, generate a strong electromagnetic field, excited hot carriers, and photothermal heating. Plasmonic nanoparticles enabling efficient absorption of light in the visible range have moderate catalytic activities. However, the catalytic performance of a plasmonic nanoparticle can be significantly enhanced by incorporating a highly catalytically active metal domain onto its surface. In this study, we demonstrate that femtosecond laser-induced atomic redistribution of metal domains in bimetallic Au-Pd nanorods (NRs) can enhance its photocurrent response by 2-fold compared to parent Au-Pd NRs. We induce structure changes on Au-Pd NRs by irradiating them with a femtosecond pulsed laser at 808 nm to precisely redistribute Pd atoms on AuNR surfaces, resulting in modified electronic and optical properties and, thereby, enhanced catalytic activity. We also investigate the trade-off between the effect of light absorption and catalytic activity by optimizing the structure and composition of bimetallic Au-Pd nanoparticles. This work provides insight into the design of hybrid plasmonic-catalytic nanostructures with well-tailored geometry, composition, and structure for solar-fuel-based applications.

Defect-related dynamics of photoexcited carriers in 2D transition metal dichalcogenides

Two-dimensional (2D) transition metal dichalcogenides (TMDs) exhibit enormous potential in the field of optoelectronics. The high performance of TMD materials and optoelectronic devices significantly depends on processes involved in photoelectric conversion, including photo-excitation, relaxation, transportation, and recombination. Remarkably, inevitable defects in materials prolong or shorten the characteristic time of these processes and even bring about new photoelectric conversion channels, namely, the defect-related relaxation pathways of photoexcited carriers tailor the performance of photoelectric applications. In recent years, there have been numerous investigations in exploring the variant transient signals caused by defects in TMDs utilizing ultrafast spectroscopies. They have the capability in providing an accurate and overall representation of ultrafast processes owing to the subtle temporal resolution. The defect-related mechanisms occurring in different time scales (from femtosecond (fs) to microsecond (μs)) play influential roles throughout the relaxation process of photoexcited species. Herein, we review the defect-related relaxation mechanisms of photoexcited species in TMDs according to the time scale utilizing ultrafast spectroscopy techniques. By interpreting and summarizing the defect-related transient signals, we furnish the direction in material design and performance optimization.

Spatiotemporally Synchronous Oxygen Self-Supply and Reactive Oxygen Species Production on Z-Scheme Heterostructures for Hypoxic Tumor Therapy

Photodynamic therapy (PDT) efficacy has been severely limited by oxygen (O₂ ) deficiency in tumors and the electron-hole separation inefficiency in photosensitizers, especially the long-range diffusion of O₂ toward photosensitizers during the PDT process. Herein, novel bismuth sulfide (Bi₂ S₃ )@bismuth (Bi) Z-scheme heterostructured nanorods (NRs) are designed to realize the spatiotemporally synchronous O₂ self-supply and production of reactive oxygen species for hypoxic tumor therapy. Both narrow-bandgap Bi₂ S₃ and Bi components can be excited by a near-infrared laser to generate abundant electrons and holes. The Z-scheme heterostructure endows Bi₂ S₃ @Bi NRs with an efficient electron-hole separation ability and potent redox potentials, where the hole on the valence band of Bi₂ S₃ can react with water to supply O₂ for the electron on the conduction band of Bi to produce reactive oxygen species. The Bi₂ S₃ @Bi NRs overcome the major obstacles of conventional photosensitizers during the PDT process and exhibit a promising phototherapeutic effect, supplying a new strategy for hypoxic tumor elimination.

Observation of the hot-phonon effect in monolayer MoS2

Femtosecond transient absorption measurements have been performed to study the pump wavelength- and fluence-dependent hot carrier relaxation dynamics in monolayer MoS2. The relaxation process of the photoinduced carriers monitored within hundreds of femtoseconds after photoexcitation is demonstrated to be achieved through the carrier-phonon scattering mechanism. It is observed that an efficient hot-phonon effect can slow down the relaxation rate by around three times with the injected carrier density changing from 1 × 1012 to 3 × 1013 cm-2. A pronounced increase in the hot carrier relaxation time with decreasing temperature is further detected, which is attributed to the decreased phonon occupancy at lower temperature.

Direct Visualization of Exciton Transport in Defective Few-Layer WS2 by Ultrafast Microscopy

As defects usually limit the exciton diffusion in 2D transition metal dichalcogenides (TMDCs), the interaction knowledge of defects and exciton transport is crucial for achieving efficient TMDC-based devices. A direct visualization of defect-modulated exciton transport is developed in few-layer WS₂ by ultrafast transient absorption microscopy. Atomic-scale defects are introduced by argon plasma treatment and identified by aberration-corrected scanning transmission electron microscopy. Neutral excitons can be captured by defects to form bound excitons in 7.75-17.88 ps, which provide a nonradiative relaxation channel, leading to decreased exciton lifetime and diffusion coefficient. The exciton diffusion length of defective sample has a drastic reduction from 349.44 to 107.40 nm. These spatially and temporally resolved measurements reveal the interaction mechanism between defects and exciton transport dynamics in 2D TMDCs, giving a guideline for designing high-performance TMDC-based devices.

Ultrafast and large optical nonlinearity of a TiSe2 saturable absorber in the 2 μm wavelength region

The non-equilibrium state of correlated electron materials is crucial for both scientific research and practical applications in optoelectronic and photonic devices. Because of the weak optical nonlinearity of most materials even under a dense optical excitation, it is desirable to achieve a significant nonlinear optical response with ultrafast and large optical nonlinearity utilizing a common material. Here, an ultrafast response and large optical nonlinearity induced by non-equilibrium electrons in typical transition metal dichalcogenides, TiSe2, are investigated in the 1.55-2.0 μm wavelength region. Significantly, we observe an ultrafast transient dynamics of 491 femtoseconds as well as a large optical nonlinearity with a saturable coefficient of -0.17 cm GW-1 (1.55 μm) and -0.10 cm GW-1 (2.0 μm). Upon increasing pump fluence, TiSe2 exhibits an enhanced bleaching response amplitude up to 563%. Furthermore, a stable Q-switched fiber laser in the 2.0 μm wavelength region is achieved by employing the TiSe2-saturable absorber. The findings offer the potential design to enhance the optical nonlinearity via non-equilibrium electrons for advanced photonic devices.

Ultrafast carrier and phonon dynamics in few-layer 2H-MoTe2

By using femtosecond pump-probe spectroscopy with broadband detection from near-infrared to midinfrared, the carrier and phonon dynamics in few-layer 2H-MoTe₂ after ultrafast excitation have been investigated in detail. Immediately following the photoexcitation, an ultrafast relaxation of the generated hot carriers by releasing phonons is observed within hundreds of femtoseconds. The subsequent electron-hole recombination with a time constant of ∼1.5 ps is clearly identified and demonstrated to be mediated through a defect-assisted process. Furthermore, we confirm that the observed redshift of the exciton resonance energy on longer time scales arises from the ultrafast thermalization of the 2H-MoTe₂ lattice caused by the transfer of electronic excitation to the phonon system. As a result, the thermalization dynamics of the lattice within 2 ps and the following cooling process of the phonon system on the 100 ps time scale are directly monitored.

Ultrafast Carrier Dynamics of the Exciton and Trion in MoS2 Monolayers Followed by Dissociation Dynamics in Au@MoS2 2D Heterointerfaces

Many-body states like excitons, biexcitons, and trions play an important role in optoelectronic and photovoltaic applications in 2D materials. Herein, we studied carrier dynamics of excitons and trions in monolayer MoS₂ deposited on a SiO₂/Si substrate, before and after Au NP deposition, using femtosecond transient absorption spectroscopy. Luminescence measurements confirm the presence of both an exciton and trion in MoS₂, which are drastically quenched after deposition of Au NPs, indicating electron transfer from photoexcited MoS₂ to Au. Ultrafast study reveals that photogenerated free carriers form excitons with a time scale of ∼500 fs and eventually turn into trions within ∼1.2 ps. Dissociation of excitons and trions has been observed in the presence of Au, with time scales of ∼600 fs and ∼3.7 ps, respectively. Understanding the formation and dissociation dynamics of the exciton and trion in monolayer MoS₂ is going to help immensely to design and develop many new 2D devices.

Grafting of terbium(iii) complexes onto layered rare-earth hydroxide nanosheets to fabricate novel optical fiber temperature sensors

Optical sensors of temperature possess the unique advantages of contactless measurement and large-scale imaging. Developments have been rapidly made in optical fiber sensors due to their high sensitivity, short response time, and electromagnetic immunity, and being easy to handle and light weight. Therefore, novel optical sensors of temperature based on optical fibers were fabricated to explore their application in special environments, such as poisonous, sparkless, currentless, and gelid ones. The present study is the first report of successful intercalation of neutral Y(iii) complexes in situ into the gallery of Y/Eu binary layered rare-earth hydroxides by hydrothermal processing without replacing the nitrate ions. The swollen layered rare-earth hydroxides were then exfoliated into ultrathin nanosheets ∼2 nm thick through dispersion in formamide. Grafting of Tb(iii) complexes onto the exfoliated nanosheets yielded novel temperature sensor films <100 nm thick, which exhibited color emissions from green to pink tunable through temperatures ranging from 77 to 360 K under ultraviolet excitation. Due to the highly sensitive and temperature-dependent emission, an optical fiber-based temperature sensor was fabricated by employing these novel allochroic films, which showed luminescence that could reversibly undergo repeated thermocycles. These optical fiber sensors have the potential to open up new fields in material functionalities via nanostructure manipulation and functionalized optical fiber engineering.

Effect of trap states on photocatalytic properties of boron-doped anatase TiO2 microspheres studied by time-resolved infrared spectroscopy

The photocatalytic hydrogen and oxygen evolution switching effect in the water splitting of two boron-doped anatase TiO₂ microspheres was elucidated from the viewpoint of trap states.

Elimination of S Vacancy as the Cause for the n-Type Behavior of MoS2 from the First-Principles Perspective

Molybdenum disulfide (2H-MoS₂) based low-dimensional nanostructure materials have great potential for applications in electronic and optoelectronic devices. However, some of the properties such as the origin of the native n-type electrical conductivity (EC) observed in these materials still remain elusive. Here, the defect properties in the 2H-MoS₂ bulk system are systematically investigated by first-principles calculation to address these issues. We find that the S vacancy V_S with low formation energy cannot be the origin of n-type EC owing to its deep defect levels within the valence band region. All other donor defects such as antisite Mo_S or Mo interstitial Mo_I also have deep levels that can trap electrons leading to depressed EC. S_Mo and S_I could be the origin of the p-type EC in 2H-MoS₂, but the concentrations are expected to be rather low due to their high formation energies and can only be enhanced under S-rich/Mo-poor conditions. These results provide the underlying insights on the defect properties 2H-MoS₂ and explain well the experimental observations.