1
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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024; 124:9785-9865. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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2
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Zhang Z, Hoang L, Hocking M, Peng Z, Hu J, Zaborski G, Reddy PD, Dollard J, Goldhaber-Gordon D, Heinz TF, Pop E, Mannix AJ. Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition. ACS NANO 2024. [PMID: 39230253 DOI: 10.1021/acsnano.4c02164] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/05/2024]
Abstract
Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled doping. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS2 growth with tunable morphologies─from separated single-crystal domains to continuous monolayer films─on a variety of substrates, including sapphire, SiO2, and Au. These WS2 films exhibit narrow neutral exciton photoluminescence line widths down to 27-28 meV and room-temperature mobility up to 34-36 cm2 V-1 s-1. Through simple modifications to the liquid precursor composition, we demonstrate the growth of V-doped WS2, MoxW1-xS2 alloys, and in-plane WS2-MoS2 heterostructures. This work presents an efficient approach for addressing a variety of TMDC synthesis needs on a laboratory scale.
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Affiliation(s)
- Zhepeng Zhang
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Lauren Hoang
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Marisa Hocking
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Zhenghan Peng
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Jenny Hu
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
| | - Gregory Zaborski
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Pooja D Reddy
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Johnny Dollard
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - David Goldhaber-Gordon
- Department of Physics, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Tony F Heinz
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Photon Sciences, Stanford University, Stanford, California 94305, United States
| | - Eric Pop
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
- Precourt Institute for Energy, Stanford University, Stanford, California 94305, United States
| | - Andrew J Mannix
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
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3
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Li C, Zheng F, Min J, Yang N, Chang YM, Liu H, Zhang Y, Yang P, Yu Q, Li Y, Luo Z, Aljarb A, Shih K, Huang JK, Li LJ, Wan Y. Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2404923. [PMID: 39149776 DOI: 10.1002/adma.202404923] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2024] [Revised: 07/01/2024] [Indexed: 08/17/2024]
Abstract
Epitaxial growth of 2D transition metal dichalcogenides (TMDCs) on sapphire substrates has been recognized as a pivotal method for producing wafer-scale single-crystal films. Both step-edges and symmetry of substrate surfaces have been proposed as controlling factors. However, the underlying fundamental still remains elusive. In this work, through the molybdenum disulfide (MoS2) growth on C/M sapphire, it is demonstrated that controlling the sulfur evaporation rate is crucial for dictating the switch between atomic-edge guided epitaxy and van der Waals epitaxy. Low-concentration sulfur condition preserves O/Al-terminated step edges, fostering atomic-edge epitaxy, while high-concentration sulfur leads to S-terminated edges, preferring van der Waals epitaxy. These experiments reveal that on a 2 in. wafer, the van der Waals epitaxy mechanism achieves better control in MoS2 alignment (≈99%) compared to the step edge mechanism (<85%). These findings shed light on the nuanced role of atomic-level thermodynamics in controlling nucleation modes of TMDCs, thereby providing a pathway for the precise fabrication of single-crystal 2D materials on a wafer scale.
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Affiliation(s)
- Chenyang Li
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Fangyuan Zheng
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Jiacheng Min
- Department of Civil Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Ni Yang
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Yu-Ming Chang
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Haomin Liu
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Yuxiang Zhang
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Pengfei Yang
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Qinze Yu
- Department of Computer Science and Engineering, The Chinese University of Hong Kong, Hong Kong SAR, 999077, China
| | - Yu Li
- Department of Computer Science and Engineering, The Chinese University of Hong Kong, Hong Kong SAR, 999077, China
- The CUHK Shenzhen Research Institute, Hi-Tech Park, Nanshan, Shenzhen, 518057, China
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Hong Kong, 999077, China
| | - Areej Aljarb
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
- Department of Physics, King Abdulaziz University, Jeddah, 21589, Kingdom of Saudi Arabia
| | - Kaimin Shih
- Department of Civil Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Jing-Kai Huang
- Department of Systems Engineering, City University of Hong Kong, Hong Kong, 999077, China
| | - Lain-Jong Li
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Yi Wan
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
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4
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Singh J, Astarini NA, Tsai M, Venkatesan M, Kuo C, Yang C, Yen H. Growth of Wafer-Scale Single-Crystal 2D Semiconducting Transition Metal Dichalcogenide Monolayers. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2307839. [PMID: 38164110 PMCID: PMC10953574 DOI: 10.1002/advs.202307839] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2023] [Revised: 11/28/2023] [Indexed: 01/03/2024]
Abstract
Due to extraordinary electronic and optoelectronic properties, large-scale single-crystal two-dimensional (2D) semiconducting transition metal dichalcogenide (TMD) monolayers have gained significant interest in the development of profit-making cutting-edge nano and atomic-scale devices. To explore the remarkable properties of single-crystal 2D monolayers, many strategies are proposed to achieve ultra-thin functional devices. Despite substantial attempts, the controllable growth of high-quality single-crystal 2D monolayer still needs to be improved. The quality of the 2D monolayer strongly depends on the underlying substrates primarily responsible for the formation of grain boundaries during the growth process. To restrain the grain boundaries, the epitaxial growth process plays a crucial role and becomes ideal if an appropriate single crystal substrate is selected. Therefore, this perspective focuses on the latest advances in the growth of large-scale single-crystal 2D TMD monolayers in the light of enhancing their industrial applicability. In the end, recent progress and challenges of 2D TMD materials for various potential applications are highlighted.
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Affiliation(s)
- Jitendra Singh
- Department of Materials Science and EngineeringNational Taiwan University of Science and TechnologyTaipei City106335Taiwan
- Department of PhysicsUdit Narayan Post Graduate College PadraunaKushinagarUttar Pradesh274304India
| | - Nadiya Ayu Astarini
- Department of Materials Science and EngineeringNational Taiwan University of Science and TechnologyTaipei City106335Taiwan
| | - Meng‐Lin Tsai
- Department of Materials Science and EngineeringNational Taiwan University of Science and TechnologyTaipei City106335Taiwan
| | - Manikandan Venkatesan
- Department of Molecular Science and EngineeringInstitute of Organic and Polymeric MaterialsNational Taipei University of TechnologyTaipei City106344Taiwan
| | - Chi‐Ching Kuo
- Department of Molecular Science and EngineeringInstitute of Organic and Polymeric MaterialsNational Taipei University of TechnologyTaipei City106344Taiwan
| | - Chan‐Shan Yang
- Institute and Undergraduate Program of Electro‐Optical EngineeringNational Taiwan Normal UniversityTaipei City11677Taiwan
| | - Hung‐Wei Yen
- Department of Materials Science and EngineeringNational Taiwan UniversityTaipei City106319Taiwan
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5
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Chen L, Cheng Z, He S, Zhang X, Deng K, Zong D, Wu Z, Xia M. Large-area single-crystal TMD growth modulated by sapphire substrates. NANOSCALE 2024; 16:978-1004. [PMID: 38112240 DOI: 10.1039/d3nr05400d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Transition metal dichalcogenides (TMDs) have recently attracted extensive attention due to their unique physical and chemical properties; however, the preparation of large-area TMD single crystals is still a great challenge. Chemical vapor deposition (CVD) is an effective method to synthesize large-area and high-quality TMD films, in which sapphires as suitable substrates play a crucial role in anchoring the source material, promoting nucleation and modulating epitaxial growth. In this review, we provide an insightful overview of different epitaxial mechanisms and growth behaviors associated with the atomic structure of sapphire surfaces and the growth parameters. First, we summarize three epitaxial growth mechanisms of TMDs on sapphire substrates, namely, van der Waals epitaxy, step-guided epitaxy, and dual-coupling-guided epitaxy. Second, we introduce the effects of polishing, cutting, and annealing processing of the sapphire surface on the TMD growth. Finally, we discuss the influence of other growth parameters, such as temperature, pressure, carrier gas, and substrate position, on the growth kinetics of TMDs. This review might provide deep insights into the controllable growth of large-area single-crystal TMDs on sapphires, which will propel their practical applications in high-performance nanoelectronics and optoelectronics.
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Affiliation(s)
- Lina Chen
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Zhaofang Cheng
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China
| | - Shaodan He
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Xudong Zhang
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Kelun Deng
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Dehua Zong
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Zipeng Wu
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Minggang Xia
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China
- Shaanxi Province Key Laboratory of Quantum Information and Optoelectronic Quantum Devices, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China
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6
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Li S, Ouyang D, Zhang N, Zhang Y, Murthy A, Li Y, Liu S, Zhai T. Substrate Engineering for Chemical Vapor Deposition Growth of Large-Scale 2D Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211855. [PMID: 37095721 DOI: 10.1002/adma.202211855] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2022] [Revised: 04/17/2023] [Indexed: 05/03/2023]
Abstract
The large-scale production of 2D transition metal dichalcogenides (TMDs) is essential to realize their industrial applications. Chemical vapor deposition (CVD) has been considered as a promising method for the controlled growth of high-quality and large-scale 2D TMDs. During a CVD process, the substrate plays a crucial role in anchoring the source materials, promoting the nucleation and stimulating the epitaxial growth. It thus significantly affects the thickness, microstructure, and crystal quality of the products, which are particularly important for obtaining 2D TMDs with expected morphology and size. Here, an insightful review is provided by focusing on the recent development associated with the substrate engineering strategies for CVD preparation of large-scale 2D TMDs. First, the interaction between 2D TMDs and substrates, a key factor for the growth of high-quality materials, is systematically discussed by combining the latest theoretical calculations. Based on this, the effect of various substrate engineering approaches on the growth of large-area 2D TMDs is summarized in detail. Finally, the opportunities and challenges of substrate engineering for the future development of 2D TMDs are discussed. This review might provide deep insight into the controllable growth of high-quality 2D TMDs toward their industrial-scale practical applications.
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Affiliation(s)
- Shaohua Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Decai Ouyang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Na Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yi Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Akshay Murthy
- Superconducting Quantum Materials and Systems Division, Fermi National Accelerator Laboratory (FNAL), Batavia, IL, 60510, USA
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, 518057, P. R. China
| | - Shiyuan Liu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, 518057, P. R. China
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7
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Zhu H, Nayir N, Choudhury TH, Bansal A, Huet B, Zhang K, Puretzky AA, Bachu S, York K, Mc Knight TV, Trainor N, Oberoi A, Wang K, Das S, Makin RA, Durbin SM, Huang S, Alem N, Crespi VH, van Duin ACT, Redwing JM. Step engineering for nucleation and domain orientation control in WSe 2 epitaxy on c-plane sapphire. NATURE NANOTECHNOLOGY 2023; 18:1295-1302. [PMID: 37500779 DOI: 10.1038/s41565-023-01456-6] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2022] [Accepted: 06/13/2023] [Indexed: 07/29/2023]
Abstract
Epitaxial growth of two-dimensional transition metal dichalcogenides on sapphire has emerged as a promising route to wafer-scale single-crystal films. Steps on the sapphire act as sites for transition metal dichalcogenide nucleation and can impart a preferred domain orientation, resulting in a substantial reduction in mirror twins. Here we demonstrate control of both the nucleation site and unidirectional growth direction of WSe2 on c-plane sapphire by metal-organic chemical vapour deposition. The unidirectional orientation is found to be intimately tied to growth conditions via changes in the sapphire surface chemistry that control the step edge location of WSe2 nucleation, imparting either a 0° or 60° orientation relative to the underlying sapphire lattice. The results provide insight into the role of surface chemistry on transition metal dichalcogenide nucleation and domain alignment and demonstrate the ability to engineer domain orientation over wafer-scale substrates.
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Affiliation(s)
- Haoyue Zhu
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, USA
| | - Nadire Nayir
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, USA
- Department of Physics, Karamanoglu Mehmetbey University, Karaman, Turkey
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Tanushree H Choudhury
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, USA
- Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai, India
| | - Anushka Bansal
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Benjamin Huet
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, USA
| | - Kunyan Zhang
- Department of Electrical Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Saiphaneendra Bachu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Krystal York
- Department of Electrical Engineering, Western Michigan University, Kalamazoo, MI, USA
| | - Thomas V Mc Knight
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Nicholas Trainor
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Aaryan Oberoi
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA, USA
| | - Ke Wang
- Materials Research Institute, The Pennsylvania State University, University Park, PA, USA
| | - Saptarshi Das
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, USA
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA, USA
| | - Robert A Makin
- Department of Electrical Engineering, Western Michigan University, Kalamazoo, MI, USA
| | - Steven M Durbin
- Department of Electrical Engineering, Western Michigan University, Kalamazoo, MI, USA
| | - Shengxi Huang
- Department of Electrical Engineering, The Pennsylvania State University, University Park, PA, USA
- Department of Electrical and Computer Engineering, Rice University, Houston, TX, USA
| | - Nasim Alem
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, USA
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Vincent H Crespi
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, USA
- Department of Physics, The Pennsylvania State University, University Park, PA, USA
| | - Adri C T van Duin
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, USA
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Joan M Redwing
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, USA.
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
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8
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Fu JH, Min J, Chang CK, Tseng CC, Wang Q, Sugisaki H, Li C, Chang YM, Alnami I, Syong WR, Lin C, Fang F, Zhao L, Lo TH, Lai CS, Chiu WS, Jian ZS, Chang WH, Lu YJ, Shih K, Li LJ, Wan Y, Shi Y, Tung V. Oriented lateral growth of two-dimensional materials on c-plane sapphire. NATURE NANOTECHNOLOGY 2023; 18:1289-1294. [PMID: 37474684 DOI: 10.1038/s41565-023-01445-9] [Citation(s) in RCA: 13] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2022] [Accepted: 06/08/2023] [Indexed: 07/22/2023]
Abstract
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) represent the ultimate thickness for scaling down channel materials. They provide a tantalizing solution to push the limit of semiconductor technology nodes in the sub-1 nm range. One key challenge with 2D semiconducting TMD channel materials is to achieve large-scale batch growth on insulating substrates of single crystals with spatial homogeneity and compelling electrical properties. Recent studies have claimed the epitaxy growth of wafer-scale, single-crystal 2D TMDs on a c-plane sapphire substrate with deliberately engineered off-cut angles. It has been postulated that exposed step edges break the energy degeneracy of nucleation and thus drive the seamless stitching of mono-oriented flakes. Here we show that a more dominant factor should be considered: in particular, the interaction of 2D TMD grains with the exposed oxygen-aluminium atomic plane establishes an energy-minimized 2D TMD-sapphire configuration. Reconstructing the surfaces of c-plane sapphire substrates to only a single type of atomic plane (plane symmetry) already guarantees the single-crystal epitaxy of monolayer TMDs without the aid of step edges. Electrical results evidence the structural uniformity of the monolayers. Our findings elucidate a long-standing question that curbs the wafer-scale batch epitaxy of 2D TMD single crystals-an important step towards using 2D materials for future electronics. Experiments extended to perovskite materials also support the argument that the interaction with sapphire atomic surfaces is more dominant than step-edge docking.
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Affiliation(s)
- Jui-Han Fu
- Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan
| | - Jiacheng Min
- Department of Civil Engineering, The University of Hong Kong, Hong Kong, China
| | - Che-Kang Chang
- Department of Electrophysics, National Yang-Ming Chiao Tung University, Hsinchu, Taiwan
| | - Chien-Chih Tseng
- Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
| | - Qingxiao Wang
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
| | - Hayato Sugisaki
- Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan
| | - Chenyang Li
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, China
| | - Yu-Ming Chang
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, China
| | - Ibrahim Alnami
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
| | - Wei-Ren Syong
- Research Centre for Applied Sciences, Academia Sinica, Taipei, Taiwan
| | - Ci Lin
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, China
| | - Feier Fang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China
| | - Lv Zhao
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China
| | - Tzu-Hsuan Lo
- Department of Electrophysics, National Yang-Ming Chiao Tung University, Hsinchu, Taiwan
| | - Chao-Sung Lai
- Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan
| | - Wei-Sheng Chiu
- National Synchrotron Radiation Research Center, Hsinchu, Taiwan
| | - Zih-Siang Jian
- Department of Electrophysics, National Yang-Ming Chiao Tung University, Hsinchu, Taiwan
| | - Wen-Hao Chang
- Department of Electrophysics, National Yang-Ming Chiao Tung University, Hsinchu, Taiwan
- Research Centre for Applied Sciences, Academia Sinica, Taipei, Taiwan
| | - Yu-Jung Lu
- Research Centre for Applied Sciences, Academia Sinica, Taipei, Taiwan
| | - Kaimin Shih
- Department of Civil Engineering, The University of Hong Kong, Hong Kong, China
| | - Lain-Jong Li
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, China.
| | - Yi Wan
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, China.
| | - Yumeng Shi
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China.
| | - Vincent Tung
- Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan.
- Center for Green Technology of the Chang Gung University, Taoyuan, Taiwan.
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9
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Zhou J, Cui J, Du S, Zhao Z, Guo J, Li S, Zhang W, Liu N, Li X, Bai Q, Guo Y, Mi S, Cheng Z, He L, Nie JC, Yang Y, Dou R. A natural indirect-to-direct band gap transition in artificially fabricated MoS 2 and MoSe 2 flowers. NANOSCALE 2023; 15:7792-7802. [PMID: 37021968 DOI: 10.1039/d3nr00477e] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Twisted bilayer (tB) transition metal dichalcogenide (TMD) structures formed from two pieces of a periodic pattern overlaid with a relative twist manifest novel electronic and optical properties and correlated electronic phenomena. Here, twisted flower-like MoS2 and MoSe2 bilayers were artificially fabricated by the chemical vapor deposition (CVD) method. Photoluminescence (PL) studies demonstrated that an energy band structural transition from the indirect gap to the direct gap happened in the region away from the flower center in tB MoS2 (MoSe2) flower patterns, accompanied by an enhanced PL intensity. The indirect-to-direct-gap transition in the tB-MoS2 (MoSe2) flower dominantly originated from a gradually enlarged interlayer spacing and thus, interlayer decoupling during the spiral growth of tB flower patterns. Meanwhile, the expanded interlayer spacing resulted in a decreased effective mass of the electrons. This means that the charged exciton (trion) population was reduced and the neutral exciton density was increased to obtain the upgraded PL intensity in the off-center region. Our experimental results were further evidenced by the density functional theory (DFT) calculations of the energy band structures and the effective masses of electrons and holes for the artificial tB-MoS2 flower with different interlayer spacings. The single-layer behavior of tB flower-like homobilayers provided a viable route to finely manipulate the energy band gap and the corresponding exotic optical properties by locally tuning the stacked structures and to satisfy the real requirement in TMD-based optoelectronic devices.
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Affiliation(s)
- Jun Zhou
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - Juan Cui
- LCP, Inst Appl Phys & Computation Math, Beijing 100088, China.
| | - Shuo Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Zihan Zhao
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, 100875, China
| | - Jianfeng Guo
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Songyang Li
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Weifeng Zhang
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, 100875, China
| | - Nan Liu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, 100875, China
| | - Xiaotian Li
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - Qinghu Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yang Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Shuo Mi
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Zhihai Cheng
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Lin He
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - J C Nie
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - Yu Yang
- LCP, Inst Appl Phys & Computation Math, Beijing 100088, China.
| | - Ruifen Dou
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
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10
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2022] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department
of Chemistry, Faculty of Science, University
of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department
of Materials Science and Engineering, Pohang
University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
- Functional
Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department
of Materials Science and Engineering, Pohang
University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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11
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Cohen A, Mohapatra PK, Hettler S, Patsha A, Narayanachari KVLV, Shekhter P, Cavin J, Rondinelli JM, Bedzyk M, Dieguez O, Arenal R, Ismach A. Tungsten Oxide Mediated Quasi-van der Waals Epitaxy of WS 2 on Sapphire. ACS NANO 2023; 17:5399-5411. [PMID: 36883970 PMCID: PMC10062024 DOI: 10.1021/acsnano.2c09754] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Accepted: 03/01/2023] [Indexed: 06/18/2023]
Abstract
Conventional epitaxy plays a crucial role in current state-of-the art semiconductor technology, as it provides a path for accurate control at the atomic scale of thin films and nanostructures, to be used as the building blocks in nanoelectronics, optoelectronics, sensors, etc. Four decades ago, the terms "van der Waals" (vdW) and "quasi-vdW (Q-vdW) epitaxy" were coined to explain the oriented growth of vdW layers on 2D and 3D substrates, respectively. The major difference with conventional epitaxy is the weaker interaction between the epi-layer and the epi-substrates. Indeed, research on Q-vdW epitaxial growth of transition metal dichalcogenides (TMDCs) has been intense, with oriented growth of atomically thin semiconductors on sapphire being one of the most studied systems. Nonetheless, there are some striking and not yet understood differences in the literature regarding the orientation registry between the epi-layers and epi-substrate and the interface chemistry. Here we study the growth of WS2 via a sequential exposure of the metal and the chalcogen precursors in a metal-organic chemical vapor deposition (MOCVD) system, introducing a metal-seeding step prior to the growth. The ability to control the delivery of the precursor made it possible to study the formation of a continuous and apparently ordered WO3 mono- or few-layer at the surface of a c-plane sapphire. Such an interfacial layer is shown to strongly influence the subsequent quasi-vdW epitaxial growth of the atomically thin semiconductor layers on sapphire. Hence, here we elucidate an epitaxial growth mechanism and demonstrate the robustness of the metal-seeding approach for the oriented formation of other TMDC layers. This work may enable the rational design of vdW and quasi-vdW epitaxial growth on different material systems.
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Affiliation(s)
- Assael Cohen
- Department
of Materials Science and Engineering, Tel
Aviv University, Ramat
Aviv, Tel Aviv 6997801, Israel
| | - Pranab K. Mohapatra
- Department
of Materials Science and Engineering, Tel
Aviv University, Ramat
Aviv, Tel Aviv 6997801, Israel
| | - Simon Hettler
- Laboratorio
de Microscopías Avanzadas (LMA), Universidad de Zaragoza, 50018 Zaragoza, Spain
- Instituto
de Nanociencia y Materiales de Aragón (INMA), CSIC−Universidad de Zaragoza, 50009 Zaragoza, Spain
| | - Avinash Patsha
- Department
of Materials Science and Engineering, Tel
Aviv University, Ramat
Aviv, Tel Aviv 6997801, Israel
| | - K. V. L. V. Narayanachari
- Department of Materials Science and Engineering and Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, United States
| | - Pini Shekhter
- Center
for Nanoscience and Nanotechnology, Tel
Aviv University, Tel Aviv 6997801, Israel
| | - John Cavin
- Department of Materials Science and Engineering and Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, United States
| | - James M. Rondinelli
- Department of Materials Science and Engineering and Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, United States
| | - Michael Bedzyk
- Department of Materials Science and Engineering and Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, United States
| | - Oswaldo Dieguez
- Department
of Materials Science and Engineering, Tel
Aviv University, Ramat
Aviv, Tel Aviv 6997801, Israel
| | - Raul Arenal
- Laboratorio
de Microscopías Avanzadas (LMA), Universidad de Zaragoza, 50018 Zaragoza, Spain
- Instituto
de Nanociencia y Materiales de Aragón (INMA), CSIC−Universidad de Zaragoza, 50009 Zaragoza, Spain
- ARAID
Foundation, 50018 Zaragoza, Spain
| | - Ariel Ismach
- Department
of Materials Science and Engineering, Tel
Aviv University, Ramat
Aviv, Tel Aviv 6997801, Israel
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12
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Haastrup MJ, Bianchi M, Lammich L, Lauritsen JV. The interface of in-situgrown single-layer epitaxial MoS 2on SrTiO 3(001) and (111). JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:194001. [PMID: 36827739 DOI: 10.1088/1361-648x/acbf19] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2022] [Accepted: 02/24/2023] [Indexed: 06/18/2023]
Abstract
SrTiO3(STO) is a versatile substrate with a high dielectric constant, which may be used in heterostructures with 2D materials, such as MoS2, to induce interesting changes to the electronic structure. STO single crystal substrates have previously been shown to support the growth of well-defined epitaxial single-layer (SL) MoS2crystals. The STO substrate is already known to renormalize the electronic bandgap of SL MoS2, but the electronic nature of the interface and its dependence on epitaxy are still unclear. Herein, we have investigated anin-situphysical vapor deposition (PVD) method, which could eliminate the need for ambient transfer between substrate preparation, subsequent MoS2growth and surface characterization. Based on this, we then investigate the structure and epitaxial alignment of pristine SL MoS2in various surface coverages grown on two STO substrates with a different initial surface lattice, the STO(001)(4 × 2) and STO(111)-(9/5 × 9/5) reconstructed surfaces, respectively. Scanning tunneling microscopy shows that epitaxial alignment of the SL MoS2is present for both systems, reflected by orientation of MoS2edges and a distinct moiré pattern visible on the MoS2(0001) basal place. Upon increasing the SL MoS2coverage, the presence of four distinct rotational domains on the STO(001) substrate, whilst only two on STO(111), is seen to control the possibilities for the formation of coherent MoS2domains with the same orientation. The presented methodology relies on standard PVD in ultra-high vacuum and it may be extended to other systems to help explore pristine two-dimensional transition metal dichalcogenide/STO systems in general.
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Affiliation(s)
- Mark J Haastrup
- Interdisciplinary Nanoscience Center (iNANO) and Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark
| | - Marco Bianchi
- Interdisciplinary Nanoscience Center (iNANO) and Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark
| | - Lutz Lammich
- Interdisciplinary Nanoscience Center (iNANO) and Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark
| | - Jeppe V Lauritsen
- Interdisciplinary Nanoscience Center (iNANO) and Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark
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13
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Wang Q, Zhang J, Xiong Y, Li S, Chernysh V, Liu X. Atomic-Scale Surface Engineering for Giant Thermal Transport Enhancement Across 2D/3D van der Waals Interfaces. ACS APPLIED MATERIALS & INTERFACES 2023; 15:3377-3386. [PMID: 36608269 DOI: 10.1021/acsami.2c20717] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Heat dissipation in two-dimensional (2D) material-based electronic devices is a critical issue for their applications. The bottleneck for this thermal issue is inefficient for heat removal across the van der Waals (vdW) interface between the 2D material and its supporting three-dimensional (3D) substrate. In this work, we demonstrate that an atomic-scale thin amorphous layer atop the substrate surface can remarkably enhance the interfacial thermal conductance (ITC) of the 2D-MoS2/3D-GaN vdW interface by a factor of 4 compared to that of the untreated crystalline substrate surface. Meanwhile, the ITC can be broadly manipulated through adjusting substrate surface roughness. Phonon dynamic and heat flux spectrum analyses show that this giant enhancement is attributed to the increased phonon densities and channels at the interfaces and enhanced phonon coupling. The slight surface fluctuation in MoS2 and the increased diffuse interfacial scattering facilitate energy transfer from MoS2's in-plane phonons to its out-of-plane phonons and then to the substrate. In addition, it is further found that the substrate and its surface topology can dramatically influence the thermal conductivity of MoS2 due to the reduction of phonon relaxation time, especially for low-frequency acoustic phonons. This study elucidates the effects of the amorphous surface of the substrate on thermal transport across 2D/3D vdW interfaces and provides a new dimension to aid in the heat dissipation of 2D-based electronic devices via atomic-scale surface engineering.
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Affiliation(s)
- Quanjie Wang
- Institute of Micro/Nano Electromechanical System, College of Mechanical Engineering, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, Shanghai201620, China
| | - Jie Zhang
- Institute of Artificial Intelligence, Donghua University, Shanghai201620, China
| | - Yucheng Xiong
- Institute of Micro/Nano Electromechanical System, College of Mechanical Engineering, Donghua University, Shanghai201620, China
| | - Shouhang Li
- Institute of Micro/Nano Electromechanical System, College of Mechanical Engineering, Donghua University, Shanghai201620, China
| | - Vladimir Chernysh
- Department of Physical Electronics, Lomonosov Moscow State University, Moscow119991, Russia
| | - Xiangjun Liu
- Institute of Micro/Nano Electromechanical System, College of Mechanical Engineering, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, Shanghai201620, China
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14
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Lin YC, Chang YP, Chen KW, Lee TT, Hsiao BJ, Tsai TH, Yang YC, Lin KI, Suenaga K, Chen CH, Chiu PW. Patterning and doping of transition metals in tungsten dichalcogenides. NANOSCALE 2022; 14:16968-16977. [PMID: 36350092 DOI: 10.1039/d2nr04677f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Substitutional transition metal doping in two-dimensional (2D) layered dichalcogenides is of fundamental importance in manipulating their electrical, excitonic, magnetic, and catalytic properties through the variation of the d-electron population. Yet, most doping strategies are spatially global, with dopants embedded concurrently during the synthesis. Here, we report an area-selective doping scheme for W-based dichalcogenide single layers, in which pre-patterned graphene is used as a reaction mask in the high-temperature substitution of the W sublattice. The chemical inertness of the thin graphene layer can effectively differentiate the spatial doping reaction, allowing for local manipulation of the host 2D materials. Using graphene as a mask is also beneficial in the sense that it also acts as an insertion layer between the contact metal and the doped channel, capable of depinning the Fermi level for low contact resistivity. Tracing doping by means of chalcogen labelling, deliberate Cr embedment is found to become energetically favorable in the presence of chalcogen deficiency, assisting the substitution of the W sublattice in the devised chemical vapor doping scheme. Atomic characterization using scanning transmission electron microscopy (STEM) shows that the dopant concentration is controllable and varies linearly with the reaction time in the current doping approach. Using the same method, other transition metal atoms such as Mo, V, and Fe can also be doped in the patterned area.
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Affiliation(s)
- Yung-Chang Lin
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan
| | - Yao-Pang Chang
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
| | - Kai-Wen Chen
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Tai-Ting Lee
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
| | - Bo-Jiun Hsiao
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
| | - Tsung-Han Tsai
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
| | - Yueh-Chiang Yang
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
| | - Kuang-I Lin
- Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan
| | - Kazu Suenaga
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan
- The Institute of Scientific and Industrial Research (ISIR-SANKEN), Osaka University, Osaka 567-0047, Japan
| | - Chia-Hao Chen
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Po-Wen Chiu
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
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15
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Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length. Nat Commun 2022; 13:4916. [PMID: 35995776 PMCID: PMC9395343 DOI: 10.1038/s41467-022-32582-9] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/22/2022] [Accepted: 08/08/2022] [Indexed: 11/08/2022] Open
Abstract
The edge-to-edge connected metal-semiconductor junction (MSJ) for two-dimensional (2D) transistors has the potential to reduce the contact length while improving the performance of the devices. However, typical 2D materials are thermally and chemically unstable, which impedes the reproducible achievement of high-quality edge contacts. Here we present a scalable synthetic strategy to fabricate low-resistance edge contacts to atomic transistors using a thermally stable 2D metal, PtTe2. The use of PtTe2 as an epitaxial template enables the lateral growth of monolayer MoS2 to achieve a PtTe2-MoS2 MSJ with the thinnest possible, seamless atomic interface. The synthesized lateral heterojunction enables the reduced dimensions of Schottky barriers and enhanced carrier injection compared to counterparts composed of a vertical 3D metal contact. Furthermore, facile position-selected growth of PtTe2-MoS2 MSJ arrays using conventional lithography can facilitate the design of device layouts with high processability, while providing low contact resistivity and ultrashort transfer length on wafer scales.
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16
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Chuang MH, Chen CA, Liu PY, Zhang XQ, Yeh NY, Shih HJ, Lee YH. Scalable Moiré Lattice with Oriented TMD Monolayers. NANOSCALE RESEARCH LETTERS 2022; 17:34. [PMID: 35286495 PMCID: PMC8921411 DOI: 10.1186/s11671-022-03670-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/28/2021] [Accepted: 01/30/2022] [Indexed: 06/14/2023]
Abstract
Moiré lattice in artificially stacked monolayers of two-dimensional (2D) materials effectively modulates the electronic structures of materials, which is widely highlighted. Formation of the electronic Moiré superlattice promises the prospect of uniformity among different moiré cells across the lattice, enabling a new platform for novel properties, such as unconventional superconductivity, and scalable quantum emitters. Recently, epitaxial growth of the monolayer transition metal dichalcogenide (TMD) is achieved on the sapphire substrate by chemical vapor deposition (CVD) to realize scalable growth of highly-oriented monolayers. However, fabrication of the scalable Moiré lattice remains challenging due to the lack of essential manipulation of the well-aligned monolayers for clean interface quality and precise twisting angle control. Here, scalable and highly-oriented monolayers of TMD are realized on the sapphire substrates by using the customized CVD process. Controlled growth of the epitaxial monolayers is achieved by promoting the rotation of the nuclei-like domains in the initial growth stage, enabling aligned domains for further grain growth in the steady-state stage. A full coverage and distribution of the highly-oriented domains are verified by second-harmonic generation (SHG) microscopy. By developing the method for clean monolayer manipulation, hetero-stacked bilayer (epi-WS2/epi-MoS2) is fabricated with the specific angular alignment of the two major oriented monolayers at the edge direction of 0°/ ± 60°. On account of the optimization for scalable Moiré lattice with a high-quality interface, the observation of interlayer exciton at low temperature illustrates the feasibility of scalable Moiré superlattice based on the oriented monolayers.
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Affiliation(s)
- Meng-Hsi Chuang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Chun-An Chen
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Po-Yen Liu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Xin-Quan Zhang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Nai-Yu Yeh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Hao-Jen Shih
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Yi-Hsien Lee
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan.
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu, 30013, Taiwan.
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17
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Zhang Z, Yang X, Liu K, Wang R. Epitaxy of 2D Materials toward Single Crystals. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105201. [PMID: 35038381 PMCID: PMC8922126 DOI: 10.1002/advs.202105201] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/12/2021] [Revised: 12/12/2021] [Indexed: 05/05/2023]
Abstract
Two-dimensional (2D) materials exhibit unique electronic, optical, magnetic, mechanical, and thermal properties due to their special crystal structure and thus have promising potential in many fields, such as in electronics and optoelectronics. To realize their real applications, especially in integrated devices, the growth of large-size single crystal is a prerequisite. Up to now, the most feasible way to achieve 2D single crystal growth is the epitaxy: growth of 2D materials of one or more specific orientations with single-crystal substrate. Only when the 2D domains have the same orientation, they can stitch together seamlessly and single-crystal 2D films can be obtained. In this view, four different epitaxy modes of 2D materials on various substrates are presented, including van der Waals epitaxy, edge epitaxy, step-guided epitaxy, and in-plane epitaxy focusing on the growth of graphene, hexagonal boron nitride (h-BN), and transition metal dichalcogenide (TMDC). The lattice symmetry relation and the interaction between 2D materials and the substrate are the key factors determining the epitaxy behaviors and thus are systematically discussed. Finally, the opportunities and challenges about the epitaxy of 2D single crystals in the future are summarized.
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Affiliation(s)
- Zhihong Zhang
- Beijing Advanced Innovation Center for Materials Genome EngineeringBeijing Key Laboratory for Magneto‐Photoelectrical Composite and Interface ScienceInstitute for Multidisciplinary InnovationSchool of Mathematics and PhysicsUniversity of Science and Technology BeijingBeijing100083China
- Interdisciplinary Institute of Light‐Element Quantum Materials and Research Centre for Light‐Element Advanced MaterialsPeking UniversityBeijing100871China
| | - Xiaonan Yang
- Beijing Advanced Innovation Center for Materials Genome EngineeringBeijing Key Laboratory for Magneto‐Photoelectrical Composite and Interface ScienceInstitute for Multidisciplinary InnovationSchool of Mathematics and PhysicsUniversity of Science and Technology BeijingBeijing100083China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano‐optoelectronicsSchool of PhysicsPeking UniversityBeijing100871China
- Interdisciplinary Institute of Light‐Element Quantum Materials and Research Centre for Light‐Element Advanced MaterialsPeking UniversityBeijing100871China
| | - Rongming Wang
- Beijing Advanced Innovation Center for Materials Genome EngineeringBeijing Key Laboratory for Magneto‐Photoelectrical Composite and Interface ScienceInstitute for Multidisciplinary InnovationSchool of Mathematics and PhysicsUniversity of Science and Technology BeijingBeijing100083China
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18
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Zhou G, Gao H, Li J, He X, He Y, Li Y, Hao G. Water-assisted controllable growth of atomically thin WTe 2nanoflakes by chemical vapor deposition based on precursor design and substrate engineering strategies. NANOTECHNOLOGY 2022; 33:175602. [PMID: 35008075 DOI: 10.1088/1361-6528/ac49c4] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/19/2021] [Accepted: 01/10/2022] [Indexed: 06/14/2023]
Abstract
WTe2nanostructures have intrigued much attention due to their unique properties, such as large non-saturating magnetoresistance, quantum spin Hall effect and topological surface state. However, the controllable growth of large-area atomically thin WTe2nanostructures remains a significant challenge. In the present work, we demonstrate the controllable synthesis of 1T' atomically thin WTe2nanoflakes (NFs) by water-assisted ambient pressure chemical vapor deposition method based on precursor design and substrate engineering strategies. The introduction of water during the growth process can generate a new synthesized route by reacting with WO3to form intermediate volatile metal oxyhydroxide. Using WO3foil as the growth precursor can drastically enhance the uniformity of as-prepared large-area 1T' WTe2NFs compared to WO3powders. Moreover, highly oriented WTe2NFs with distinct orientations can be obtained by using a-plane and c-plane sapphire substrates, respectively. Corresponding precursor design and substrate engineering strategies are expected to be applicable to other low dimensional transition metal dichalcogenides, which are crucial for the design of novel electronic and optoelectronic devices.
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Affiliation(s)
- Guoliang Zhou
- School of Physics and Optoelectronics and and Hunan Key Laboratory for Micro-Nano Energy Materials and Device, Xiangtan University, Xiangtan 411105, People's Republic of China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Hui Gao
- School of Physics and Optoelectronics and and Hunan Key Laboratory for Micro-Nano Energy Materials and Device, Xiangtan University, Xiangtan 411105, People's Republic of China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Jin Li
- School of Physics and Optoelectronics and and Hunan Key Laboratory for Micro-Nano Energy Materials and Device, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Xiaoyue He
- Materials Growth and Characterization Center, Songshan Lake Materials Laboratory, Dongguan 523808, People's Republic of China
| | - Yanbing He
- School of Physics and Optoelectronics and and Hunan Key Laboratory for Micro-Nano Energy Materials and Device, Xiangtan University, Xiangtan 411105, People's Republic of China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Yan Li
- School of Physics and Optoelectronics and and Hunan Key Laboratory for Micro-Nano Energy Materials and Device, Xiangtan University, Xiangtan 411105, People's Republic of China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Guolin Hao
- School of Physics and Optoelectronics and and Hunan Key Laboratory for Micro-Nano Energy Materials and Device, Xiangtan University, Xiangtan 411105, People's Republic of China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, People's Republic of China
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19
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Kim J, Seung H, Kang D, Kim J, Bae H, Park H, Kang S, Choi C, Choi BK, Kim JS, Hyeon T, Lee H, Kim DH, Shim S, Park J. Wafer-Scale Production of Transition Metal Dichalcogenides and Alloy Monolayers by Nanocrystal Conversion for Large-Scale Ultrathin Flexible Electronics. NANO LETTERS 2021; 21:9153-9163. [PMID: 34677071 DOI: 10.1021/acs.nanolett.1c02991] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMD) layers are unit-cell thick materials with tunable physical properties according to their size, morphology, and chemical composition. Their transition of lab-scale research to industrial-scale applications requires process development for the wafer-scale growth and scalable device fabrication. Herein, we report on a new type of atmospheric pressure chemical vapor deposition (APCVD) process that utilizes colloidal nanoparticles as process-scalable precursors for the wafer-scale production of TMD monolayers. Facile uniform distribution of nanoparticle precursors on the entire substrate leads to the wafer-scale uniform synthesis of TMD monolayers with the controlled size and morphology. Composition-controlled TMD alloy monolayers with tunable bandgaps can be produced by simply mixing dual nanoparticle precursor solutions in the desired ratio. We also demonstrate the fabrication of ultrathin field-effect transistors and flexible electronics with uniformly controlled performance by using TMD monolayers.
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Affiliation(s)
- Jihoon Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Hyojin Seung
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Dohun Kang
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Joodeok Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Hyeonhu Bae
- Department of Physics, Konkuk University, Seoul 05029, Republic of Korea
| | - Hayoung Park
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Sungsu Kang
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Changsoon Choi
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Back Kyu Choi
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Ji Soo Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Taeghwan Hyeon
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Hoonkyung Lee
- Department of Physics, Konkuk University, Seoul 05029, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Sangdeok Shim
- Department of Chemistry, Sunchon National University, Sunchon 57922, Republic of Korea
| | - Jungwon Park
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
- Institute of Engineering Research, Seoul National University, Seoul 08826, Republic of Korea
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20
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Li T, Guo W, Ma L, Li W, Yu Z, Han Z, Gao S, Liu L, Fan D, Wang Z, Yang Y, Lin W, Luo Z, Chen X, Dai N, Tu X, Pan D, Yao Y, Wang P, Nie Y, Wang J, Shi Y, Wang X. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire. NATURE NANOTECHNOLOGY 2021; 16:1201-1207. [PMID: 34475559 DOI: 10.1038/s41565-021-00963-8] [Citation(s) in RCA: 200] [Impact Index Per Article: 66.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2020] [Accepted: 07/22/2021] [Indexed: 05/28/2023]
Abstract
Two-dimensional (2D) semiconductors, in particular transition metal dichalcogenides (TMDCs), have attracted great interest in extending Moore's law beyond silicon1-3. However, despite extensive efforts4-25, the growth of wafer-scale TMDC single crystals on scalable and industry-compatible substrates has not been well demonstrated. Here we demonstrate the epitaxial growth of 2 inch (~50 mm) monolayer molybdenum disulfide (MoS2) single crystals on a C-plane sapphire. We designed the miscut orientation towards the A axis (C/A) of sapphire, which is perpendicular to the standard substrates. Although the change of miscut orientation does not affect the epitaxial relationship, the resulting step edges break the degeneracy of nucleation energy for the antiparallel MoS2 domains and lead to more than a 99% unidirectional alignment. A set of microscopies, spectroscopies and electrical measurements consistently showed that the MoS2 is single crystalline and has an excellent wafer-scale uniformity. We fabricated field-effect transistors and obtained a mobility of 102.6 cm2 V-1 s-1 and a saturation current of 450 μA μm-1, which are among the highest for monolayer MoS2. A statistical analysis of 160 field-effect transistors over a centimetre scale showed a >94% device yield and a 15% variation in mobility. We further demonstrated the single-crystalline MoSe2 on C/A sapphire. Our method offers a general and scalable route to produce TMDC single crystals towards future electronics.
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Affiliation(s)
- Taotao Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Wei Guo
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Liang Ma
- School of Physics, Southeast University, Nanjing, China
| | - Weisheng Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Zhihao Yu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Zhen Han
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Si Gao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Lei Liu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Dongxu Fan
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Zixuan Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yang Yang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Weiyi Lin
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Zhongzhong Luo
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xiaoqing Chen
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Ningxuan Dai
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xuecou Tu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
- Microfabrication and Integration Technology Center, Nanjing University, Nanjing, China
| | - Danfeng Pan
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
- Microfabrication and Integration Technology Center, Nanjing University, Nanjing, China
| | - Yagang Yao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Peng Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Jinlan Wang
- School of Physics, Southeast University, Nanjing, China.
| | - Yi Shi
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
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21
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Chang YP, Li WB, Yang YC, Lu HL, Lin MF, Chiu PW, Lin KI. Oxidation and Degradation of WS 2 Monolayers Grown by NaCl-Assisted Chemical Vapor Deposition: Mechanism and Prevention. NANOSCALE 2021; 13:16629-16640. [PMID: 34586136 DOI: 10.1039/d1nr04809k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The preservation of two-dimensional WS2 in the environment is a concern for researchers. In addition to water vapor and oxygen, the latest research points out that degradation is directly related to light absorption. Based on the selection rules of nonlinear optics, two-photon absorption is dipole forbidden in the exciton 1s states, but second-harmonic generation (SHG) is allowed with virtual transitions. According to this mechanism, we proved that SHG is an optical detection method with non-photooxidative damage and energy characteristics. With this detection method, we can explore the oxidation and degradation mechanisms of WS2 grown by NaCl-assisted chemical vapor deposition in its original state. The WS2 monolayers that use NaCl to assist in growth have undergone different degradation processes, starting to oxidize from random positions in the triangular flake. We use a photocatalytic reaction to explain the photo-induced degradation mechanism with sulfur vacancies. It was further found that WS2 grown with NaCl assistance is hydrolyzed in a dark and high-humidity environment, which does not occur in pure WS2. Finally, we demonstrated that changing the direction of the sapphire substrate relative to the gas flow direction to grow NaCl-assisted WS2 can greatly improve its stability in the ambient atmosphere, even when exposed to light. The optimal geometric structures and ground state energies are investigated by the density functional theory-based calculations. According to the orientation and symmetry of NaCl-assisted WS2, we can expect that it will have a better growth quality when the gas flow direction is perpendicular to the [112̄0] direction of the sapphire substrate. This contributes to the nucleation and subsequent growth of NaCl-assisted WS2. This research provides a more stable optical inspection method than other established methods and greatly improves the operational stability of NaCl-assisted WS2 under environmental conditions.
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Affiliation(s)
- Yao-Pang Chang
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
| | - Wei-Bang Li
- Core Facility Center, National Cheng Kung University, Tainan 70101, Taiwan.
- Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan
| | - Yueh-Chiang Yang
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
| | - Hsueh-Lung Lu
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
| | - Ming-Fa Lin
- Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan
| | - Po-Wen Chiu
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
| | - Kuang-I Lin
- Core Facility Center, National Cheng Kung University, Tainan 70101, Taiwan.
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22
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Haastrup MJ, Mammen MHR, Rodríguez-Fernández J, Lauritsen JV. Lateral Interfaces between Monolayer MoS 2 Edges and Armchair Graphene Nanoribbons on Au(111). ACS NANO 2021; 15:6699-6708. [PMID: 33750101 DOI: 10.1021/acsnano.0c10062] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The realization of electronic devices based on heterostructures of metallic, semiconducting, or insulating two-dimensional materials relies on the ability to form structurally coherent and clean interfaces between them, vertically or laterally. Lateral two-dimensional heterostructures that fuse together two different materials in a well-controlled manner have attracted recent attention, but the methods to form seamless interfaces between structurally dissimilar materials, such as graphene and transition-metal dichalcogenides (TMDCs), are still limited. Here, we investigate the structure of the lateral interfaces that arise between monolayer MoS2 flakes on Au(111) and two families of armchair graphene nanoribbons (GNRs) created through on-surface assisted Ullmann coupling using regular organobromine precursors for GNR synthesis. We find that parallel alignment between the GNR armchair edge and MoS2 leads to van der Waals bonded nanoribbons, whereas a perpendicular orientation is characterized by a single phenyl-group of the GNR covalently bonded to S on the edge. The edge-on bonding is facilitated by a hydrogen treatment of the MoS2, and temperature control during growth is shown to influence the nanoribbon width and the yield of covalently attached nanoribbons. Interestingly, the temperatures needed to drive the intramolecular dehydrogenation during GNR formation are lowered significantly by the presence of MoS2, which we attribute to enhanced hydrogen recombination at the MoS2 edges. These results are a demonstration of a viable method to make laterally bonded graphene nanostructures to TMDCs to be used in further investigations of two-dimensional heterostructure junctions.
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Affiliation(s)
- Mark J Haastrup
- Interdisciplinary Nanoscience Center (iNANO), Aarhus University, 8000 Aarhus C, Denmark
| | - Mathias H R Mammen
- Interdisciplinary Nanoscience Center (iNANO), Aarhus University, 8000 Aarhus C, Denmark
| | | | - Jeppe V Lauritsen
- Interdisciplinary Nanoscience Center (iNANO), Aarhus University, 8000 Aarhus C, Denmark
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23
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Choi SH, Kim HJ, Song B, Kim YI, Han G, Nguyen HTT, Ko H, Boandoh S, Choi JH, Oh CS, Cho HJ, Jin JW, Won YS, Lee BH, Yun SJ, Shin BG, Jeong HY, Kim YM, Han YK, Lee YH, Kim SM, Kim KK. Epitaxial Single-Crystal Growth of Transition Metal Dichalcogenide Monolayers via the Atomic Sawtooth Au Surface. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2006601. [PMID: 33694212 DOI: 10.1002/adma.202006601] [Citation(s) in RCA: 36] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2020] [Revised: 01/29/2021] [Indexed: 06/12/2023]
Abstract
Growth of 2D van der Waals layered single-crystal (SC) films is highly desired not only to manifest the intrinsic physical and chemical properties of materials, but also to enable the development of unprecedented devices for industrial applications. While wafer-scale SC hexagonal boron nitride film has been successfully grown, an ideal growth platform for diatomic transition metal dichalcogenide (TMdC) films has not been established to date. Here, the SC growth of TMdC monolayers on a centimeter scale via the atomic sawtooth gold surface as a universal growth template is reported. The atomic tooth-gullet surface is constructed by the one-step solidification of liquid gold, evidenced by transmission electron microscopy. The anisotropic adsorption energy of the TMdC cluster, confirmed by density-functional calculations, prevails at the periodic atomic-step edge to yield unidirectional epitaxial growth of triangular TMdC grains, eventually forming the SC film, regardless of the Miller indices. Growth using the atomic sawtooth gold surface as a universal growth template is demonstrated for several TMdC monolayer films, including WS2 , WSe2 , MoS2 , the MoSe2 /WSe2 heterostructure, and W1- x Mox S2 alloys. This strategy provides a general avenue for the SC growth of diatomic van der Waals heterostructures on a wafer scale, to further facilitate the applications of TMdCs in post-silicon technology.
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Affiliation(s)
- Soo Ho Choi
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Hyung-Jin Kim
- Department of Energy and Materials Engineering, Dongguk University, Seoul, 04620, Republic of Korea
| | - Bumsub Song
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Yong In Kim
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Gyeongtak Han
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | | | - Hayoung Ko
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Stephen Boandoh
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Ji Hoon Choi
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Chang Seok Oh
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Hyun Je Cho
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Jeong Won Jin
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Yo Seob Won
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Byung Hoon Lee
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Seok Joon Yun
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Bong Gyu Shin
- Max-Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Hu Young Jeong
- UNIST Central Research Facilities, School of Materials Science and Engineering, UNIST, Ulsan, 44919, Republic of Korea
| | - Young-Min Kim
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Young-Kyu Han
- Department of Energy and Materials Engineering, Dongguk University, Seoul, 04620, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Soo Min Kim
- Department of Chemistry, Sookmyung Women's University, Seoul, 14072, Republic of Korea
| | - Ki Kang Kim
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
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24
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Glutathione and cystamine functionalized MoS 2core-shell nanoparticles for enhanced electrochemical detection of doxorubicin. Mikrochim Acta 2021; 188:35. [PMID: 33420619 DOI: 10.1007/s00604-020-04642-8] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/06/2020] [Accepted: 11/09/2020] [Indexed: 01/03/2023]
Abstract
Two-dimensional (2D) MoS2core-shell nanoparticles were synthesized using an eco-friendly surface functionalization-agent with L-glutathione and cystamine (L-GSH-MoS2-CYS) using ultrasonic frequency of 20-25 kHz. The novel modified electrode was evaluated for the electrochemical detection of doxorubicin (DOX), through cyclic and differential pulse voltammetric techniques. The electro-catalytic oxidation currents of DOX exhibited a linear relationship in the concentration ranges 0.1-78.3 and 98.3-1218 μM, with a detection limit of 31 nM. A sensitivity of 0.017μA μM-1 cm-2 was acquired at 0.48 V. The fabricated L-GSH-MoS2-CYS modified electrode showed excellent precision, selectivity, repeatability, and reproducibility during the determination of DOX levels in blood serum samples. Thus, the fabricated L-GSH-MoS2-CYS/GCE modified electrode has potential for clinical applications for optimization of chemotherapeutic drugs owing to its selectivity, ease of preparation, and long-term stability. Graphical abstract.
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25
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Kawamoto H, Higashitarumizu N, Nagamura N, Nakamura M, Shimamura K, Ohashi N, Nagashio K. Micrometer-scale monolayer SnS growth by physical vapor deposition. NANOSCALE 2020; 12:23274-23281. [PMID: 33206097 DOI: 10.1039/d0nr06022d] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recently, monolayer SnS, a two-dimensional group IV monochalcogenide, was grown on a mica substrate at the micrometer-size scale by the simple physical vapor deposition (PVD), resulting in the successful demonstration of its in-plane room temperature ferroelectricity. However, the reason behind the monolayer growth remains unclear because it had been considered that the SnS growth inevitably results in a multilayer thickness due to the strong interlayer interaction arising from lone pair electrons. Here, we investigate the PVD growth of monolayer SnS from two different feed powders, highly purified SnS and commercial phase-impure SnS. Contrary to expectations, it is suggested that the mica substrate surface is modified by sulfur evaporated from the Sn2S3 contaminant in the as-purchased powder and the lateral growth of monolayer SnS is facilitated due to the enhanced surface diffusion of SnS precursor molecules, unlike the growth from the highly purified powder. This insight provides a guide to identify further controllable growth conditions.
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Affiliation(s)
- H Kawamoto
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
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26
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Hoang AT, Katiyar AK, Shin H, Mishra N, Forti S, Coletti C, Ahn JH. Epitaxial Growth of Wafer-Scale Molybdenum Disulfide/Graphene Heterostructures by Metal-Organic Vapor-Phase Epitaxy and Their Application in Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:44335-44344. [PMID: 32877158 PMCID: PMC7735665 DOI: 10.1021/acsami.0c12894] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/16/2020] [Accepted: 09/02/2020] [Indexed: 06/11/2023]
Abstract
Van der Waals heterostructures have attracted increasing interest, owing to the combined benefits of their constituents. These hybrid nanostructures can be realized via epitaxial growth, which offers a promising approach for the controlled synthesis of the desired crystal phase and the interface between van der Waals layers. Here, the epitaxial growth of a continuous molybdenum disulfide (MoS2) film on large-area graphene, which was directly grown on a sapphire substrate, is reported. Interestingly, the grain size of MoS2 grown on graphene increases, whereas that of MoS2 grown on SiO2 decreases with an increasing amount of hydrogen in the chemical vapor deposition reactor. In addition, to achieve the same quality, MoS2 grown on graphene requires a much lower growth temperature (400 °C) than that grown on SiO2 (580 °C). The MoS2/graphene heterostructure that was epitaxially grown on a transparent platform was investigated to explore its photosensing properties and was found to exhibit inverse photoresponse with highly uniform photoresponsivity in the photodetector pixels fabricated across a full wafer. The MoS2/graphene heterostructure exhibited ultrahigh photoresponsivity (4.3 × 104 A W-1) upon exposure to visible light of a wide range of wavelengths, confirming the growth of a high-quality MoS2/graphene heterostructure with a clean interface.
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Affiliation(s)
- Anh Tuan Hoang
- School of Electrical
and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Ajit K. Katiyar
- School of Electrical
and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Heechang Shin
- School of Electrical
and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Neeraj Mishra
- Center for Nanotechnology
Innovation @ NEST, Istituto Italiano di
Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Stiven Forti
- Center for Nanotechnology
Innovation @ NEST, Istituto Italiano di
Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Camilla Coletti
- Center for Nanotechnology
Innovation @ NEST, Istituto Italiano di
Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Jong-Hyun Ahn
- School of Electrical
and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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27
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Hwang Y, Kang SG, Shin N. Inherent Resistance of Seed-Mediated Grown MoSe 2 Monolayers to Defect Formation. ACS APPLIED MATERIALS & INTERFACES 2020; 12:34297-34305. [PMID: 32618179 DOI: 10.1021/acsami.0c05558] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recent progress in the chemical vapor deposition technique toward growing large-area and single-crystalline two-dimensional (2D) transition metal dichalcogenides (TMDs) has resulted in an electronic/optoelectronic device performance that rivals that of their top-down counterparts, despite the extensive use of hydrogen, a common reducing agent that readily generates defects in TMDs. Herein, we report that 2D MoSe2 domains containing oxide seeds are resistant to hydrogen-induced defect generation. Specifically, we observed that the etching of the edges of seed-containing MoSe2 was significantly less than that of pristine MoSe2, without apparent seed particles, under the same H2 annealing conditions. Our systematic approach for controlling the H2 exposure time indicates that the oxidation of Mo and the edge roughening of seedless MoSe2 coincidentally increase after H2 exposure owing to the formation of Se vacancy followed by Mo oxidation, which is not the case with seed-containing MoSe2. An ab initio calculation indicates that hydrogen preferentially adsorbs more onto O bonded to Mo than onto Se, providing further evidence of the resistance of seeded MoSe2 to hydrogen etching. This finding provides an insight into controlling defect formation in 2D TMDs by employing sacrificial adsorption sites for reactive species (i.e., hydrogen).
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Affiliation(s)
- Yunjeong Hwang
- Department of Chemistry and Chemical Engineering, Inha University, Incheon 22212, Republic of Korea
| | - Sung Gu Kang
- School of Chemical Engineering, University of Ulsan, Ulsan 680-749, Republic of Korea
| | - Naechul Shin
- Department of Chemistry and Chemical Engineering, Inha University, Incheon 22212, Republic of Korea
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Ma Z, Wang S, Deng Q, Hou Z, Zhou X, Li X, Cui F, Si H, Zhai T, Xu H. Epitaxial Growth of Rectangle Shape MoS 2 with Highly Aligned Orientation on Twofold Symmetry a-Plane Sapphire. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2000596. [PMID: 32162833 DOI: 10.1002/smll.202000596] [Citation(s) in RCA: 28] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/30/2020] [Revised: 02/19/2020] [Accepted: 02/28/2020] [Indexed: 06/10/2023]
Abstract
Research on transition metal dichalcogenides (TMDs) has been accelerated by the development of large-scale synthesis based on chemical vapor deposition (CVD) growth. However, in most cases, CVD-grown TMDs are composed of randomly oriented grains, and thus contain many distorted grain boundaries (GBs), which seriously degrade their electrical and photoelectrical properties. Here, the epitaxial growth of highly aligned MoS2 grains is reported on a twofold symmetry a-plane sapphire substrate. The obtained MoS2 grains have an unusual rectangle shape with perfect orientation alignment along the [1-100] crystallographic direction of a-plane sapphire. It is found that the growth temperature plays a key role in its orientation alignment and morphology evolution, and high temperature is beneficial to the initial MoS2 seeds rotate to the favorable orientation configurations. In addition, the photoluminescence quenching of the well-aligned MoS2 grains indicates a strong MoS2 -substrate interaction which induces the anisotropic growth of MoS2 , and thus brings the formation of rectangle shape grains. Moreover, the well-aligned MoS2 grains splice together without GB formation, and thus that has negligible effect on its electrical transport properties. The progress achieved in this work could promote the controlled synthesis of large-area TMDs single crystal film and the scalable fabrication of high-performance electronic devices.
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Affiliation(s)
- Zongpeng Ma
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Shiyao Wang
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Qixin Deng
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
- School of Materials Science and Engineering, Shijiazhuang Tiedao University, Shijiazhuang, 050043, P. R. China
| | - Zhufeng Hou
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
| | - Xing Zhou
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xiaobo Li
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Fangfang Cui
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Huayan Si
- School of Materials Science and Engineering, Shijiazhuang Tiedao University, Shijiazhuang, 050043, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
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Kim G, Shin HS. Spatially controlled lateral heterostructures of graphene and transition metal dichalcogenides toward atomically thin and multi-functional electronics. NANOSCALE 2020; 12:5286-5292. [PMID: 32083259 DOI: 10.1039/c9nr10859a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Edge contacts between two-dimensional (2D) materials in the in-plane direction can achieve minimal contact area and low contact resistance, producing atomically thin devices with improved performance. Particularly, lateral heterojunctions of metallic graphene and semiconducting transition metal dichalcogenides (TMDs) exhibit small Schottky barrier heights due to graphene's low work-function. However, issues exist with the fabrication of highly transparent and flexible multi-functional devices utilizing lateral heterostructures (HSs) of graphene and TMDs via spatially controlled growth. This review demonstrates the growth and electronic applications of lateral HSs of graphene and TMDs, highlighting key technologies controlling the wafer-scale growth of continuous films for practical applications. It deepens the understanding of the spatially controlled growth of lateral HSs using chemical vapor deposition methods, and also contributes to the applications that depend on the scale-up of all-2D electronics with ultra-high electrical performance.
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Affiliation(s)
- Gwangwoo Kim
- Department of Chemistry, Ulsan National Institute of Science & Technology (UNIST), Ulsan 44919, Republic of Korea.
| | - Hyeon Suk Shin
- Department of Chemistry, Ulsan National Institute of Science & Technology (UNIST), Ulsan 44919, Republic of Korea. and Department of Energy Engineering, Ulsan National Institute of Science & Technology (UNIST), Ulsan 44919, Republic of Korea and Low Dimensional Carbon Material Center, Ulsan National Institute of Science & Technology (UNIST), Ulsan 44919, Republic of Korea and Center for Multidimensional Carbon Materials, Institute of Basic Science (IBS), Ulsan 44919, Republic of Korea
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30
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Wan W, Zhan L, Shih TM, Zhu Z, Lu J, Huang J, Zhang Y, Huang H, Zhang X, Cai W. Controlled growth of MoS 2 via surface-energy alterations. NANOTECHNOLOGY 2020; 31:035601. [PMID: 31574488 DOI: 10.1088/1361-6528/ab49a2] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Monolayer MoS2 in triangular configurations with rich edges or high-quality uniform films are either catalytically active for the hydrogen evolution reaction or flexible for functional electronic and optoelectronic devices. Here, we have experimentally discovered that these two types of MoS2 products can be selectively synthesized on graphene or sapphire substrates, which are associated with both different adsorption energy and diffusion-energy barrier for vapor precursors during growth. Our study not only provides insights into the on-surface synthesis of high-quality MoS2 monolayers, but also can be applied to the growth of vertically-stacked and large-scale in-plane lateral MoS2-graphene heterostructures.
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Affiliation(s)
- Wen Wan
- Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, Fujian 361005, People's Republic of China
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31
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Jain A, Szabó Á, Parzefall M, Bonvin E, Taniguchi T, Watanabe K, Bharadwaj P, Luisier M, Novotny L. One-Dimensional Edge Contacts to a Monolayer Semiconductor. NANO LETTERS 2019; 19:6914-6923. [PMID: 31513426 DOI: 10.1021/acs.nanolett.9b02166] [Citation(s) in RCA: 35] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Integration of electrical contacts into van der Waals (vdW) heterostructures is critical for realizing electronic and optoelectronic functionalities. However, to date no scalable methodology for gaining electrical access to buried monolayer two-dimensional (2D) semiconductors exists. Here we report viable edge contact formation to hexagonal boron nitride (hBN) encapsulated monolayer MoS2. By combining reactive ion etching, in situ Ar+ sputtering and annealing, we achieve a relatively low edge contact resistance, high mobility (up to ∼30 cm2 V-1 s-1) and high on-current density (>50 μA/μm at VDS = 3V), comparable to top contacts. Furthermore, the atomically smooth hBN environment also preserves the intrinsic MoS2 channel quality during fabrication, leading to a steep subthreshold swing of 116 mV/dec with a negligible hysteresis. Hence, edge contacts are highly promising for large-scale practical implementation of encapsulated heterostructure devices, especially those involving air sensitive materials, and can be arbitrarily narrow, which opens the door to further shrinkage of 2D device footprint.
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Affiliation(s)
- Achint Jain
- Photonics Laboratory , ETH Zürich , 8093 Zürich , Switzerland
| | - Áron Szabó
- Integrated Systems Laboratory , ETH Zürich , 8092 Zürich , Switzerland
| | | | - Eric Bonvin
- Photonics Laboratory , ETH Zürich , 8093 Zürich , Switzerland
| | - Takashi Taniguchi
- National Institute for Material Science , 1-1 Namiki , Tsukuba 305-0044 , Japan
| | - Kenji Watanabe
- National Institute for Material Science , 1-1 Namiki , Tsukuba 305-0044 , Japan
| | - Palash Bharadwaj
- Department of Electrical and Computer Engineering , Rice University , Houston , Texas 77005 , United States
| | - Mathieu Luisier
- Integrated Systems Laboratory , ETH Zürich , 8092 Zürich , Switzerland
| | - Lukas Novotny
- Photonics Laboratory , ETH Zürich , 8093 Zürich , Switzerland
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32
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Zhao S, Wang L, Fu L. Precise Vapor-Phase Synthesis of Two-Dimensional Atomic Single Crystals. iScience 2019; 20:527-545. [PMID: 31655063 PMCID: PMC6818371 DOI: 10.1016/j.isci.2019.09.038] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/05/2019] [Revised: 09/19/2019] [Accepted: 09/24/2019] [Indexed: 02/06/2023] Open
Abstract
Two-dimensional atomic single crystals (2DASCs) have drawn immense attention because of their potential for fundamental research and new technologies. Novel properties of 2DASCs are closely related to their atomic structures, and effective modulation of the structures allows for exploring various practical applications. Precise vapor-phase synthesis of 2DASCs with tunable thickness, selectable phase, and controllable chemical composition can be realized to adjust their band structures and electronic properties. This review highlights the latest advances in the precise vapor-phase synthesis of 2DASCs. We thoroughly elaborate on strategies toward the accurate control of layer number, phase, chemical composition of layered 2DASCs, and thickness of non-layered 2DASCs. Finally, we suggest forward-looking solutions to the challenges and directions of future developments in this emerging field.
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Affiliation(s)
- Shasha Zhao
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Luyang Wang
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Lei Fu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China.
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33
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Liu Y, Yin J, Zhou Y, Sun L, Yue W, Sun Y, Wang Y. Tuning Electron Transport Direction through the Deposition Sequence of MoS
2
and WS
2
on Fluorine‐Doped Tin Oxide for Improved Electrocatalytic Reduction Efficiency. ChemElectroChem 2019. [DOI: 10.1002/celc.201900409] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Yajuan Liu
- Institute of Advanced Materials School of Chemistry and Chemical EngineeringSoutheast University Nanjing 211189 China
| | - Jie Yin
- Institute of Advanced Materials School of Chemistry and Chemical EngineeringSoutheast University Nanjing 211189 China
| | - Yuqing Zhou
- Institute of Advanced Materials School of Chemistry and Chemical EngineeringSoutheast University Nanjing 211189 China
- School of Chemical Engineering and MaterialsNanjing Polytechnic Institute Nanjing 210048 China
| | - Luo Sun
- Institute of Advanced Materials School of Chemistry and Chemical EngineeringSoutheast University Nanjing 211189 China
| | - Wenjin Yue
- School of Biochemical EngineeringAnhui Polytechnic University Wuhu 241000 China
| | - Yueming Sun
- Institute of Advanced Materials School of Chemistry and Chemical EngineeringSoutheast University Nanjing 211189 China
| | - Yuqiao Wang
- Institute of Advanced Materials School of Chemistry and Chemical EngineeringSoutheast University Nanjing 211189 China
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34
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Ji HG, Maruyama M, Aji AS, Okada S, Matsuda K, Ago H. van der Waals interaction-induced photoluminescence weakening and multilayer growth in epitaxially aligned WS2. Phys Chem Chem Phys 2018; 20:29790-29797. [DOI: 10.1039/c8cp04418j] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Influence of sapphire substrate on the epitaxial growth of WS2 was investigated in terms of the optical and electrical properties.
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Affiliation(s)
- Hyun Goo Ji
- Interdisciplinary Graduate School of Engineering Sciences
- Kyushu University
- Fukuoka 816-8580
- Japan
| | - Mina Maruyama
- Graduate School of Pure and Applied Sciences
- University of Tsukuba
- Ibaraki 305-8571
- Japan
| | - Adha Sukma Aji
- Interdisciplinary Graduate School of Engineering Sciences
- Kyushu University
- Fukuoka 816-8580
- Japan
| | - Susumu Okada
- Graduate School of Pure and Applied Sciences
- University of Tsukuba
- Ibaraki 305-8571
- Japan
| | - Kazunari Matsuda
- Institute of Advanced Energy
- Kyoto University
- Uji
- Kyoto, 611-0011
- Japan
| | - Hiroki Ago
- Interdisciplinary Graduate School of Engineering Sciences
- Kyushu University
- Fukuoka 816-8580
- Japan
- Global Innovation Center (GIC)
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