Quantitative Electromechanical Atomic Force Microscopy

High Quality Epitaxial Piezoelectric and Ferroelectric Wurtzite Al1- xScxN Thin Films

Piezoelectric and ferroelectric wurtzite are promising to reshape modern microelectronics because they can be easily integrated with mainstream semiconductor technology. Sc doped AlN (Al1- xScxN) has attracted much attention for its enhanced piezoelectric and emerging ferroelectric properties, yet the commonly used sputtering results in polycrystalline Al1- xScxN films with high leakage current. Here, the pulsed laser deposition of single crystalline epitaxial Al1- xScxN thin films on sapphire and 4H-SiC substrates is reported. Pure wurtzite phase is maintained up to x = 0.3 with ≤0.1 at% oxygen contamination. Polarization is estimated to be 140 µC cm-2 via atomic scale microscopy imaging and found to be switchable via a scanning probe. The piezoelectric coefficient is found to be five times of the undoped one when x = 0.3, making it desirable for high-frequency radiofrequency (RF) filters and 3D nonvolatile memories.

Ultra-wide range non-contact surface profilometry based on reconfigurable fiber interferometry

Surface characterization is essential for a technical evaluation of device performance and to assess surface dynamics in fabrication units. In this regard, a number of surface profiling techniques have been developed that accurately map sample topography but have significantly limited detection range. Here, we demonstrate a cascaded non-contact fiber interferometer-based approach for real-time high-precision surface profiling with ultrawide detection range (nm to mm). This compact interferometers' system operates by wavelength interrogation that provides a scope to study several types of surfaces and has a tunable cavity configuration for varying the sensitivity and range of the detectable features' size. The proposed system enables nanoscale profiling over 10-1000 nm with resolution of 10 nm and microscale mapping over 1-1000 µm with resolution of 0.2 µm. The technique is utilized to map the features of nanostructured surfaces and estimate the surface roughness of standardized industrial samples.

Non-contact non-resonant atomic force microscopy method for measurements of highly mobile molecules and nanoparticles

Atomic force microscopy (AFM) is nowadays indispensable versatile scanning probe method widely employed for fundamental and applied research in physics, chemistry, biology as well as industrial metrology. Conventional AFM systems can operate in various environments such as ultra-high vacuum, electrolyte solutions, or controlled gas atmosphere. Measurements in ambient air are prevalent due to their technical simplicity; however, there are drawbacks such as formation of water meniscus that greatly increases attractive interaction (adhesion) between the tip and the sample, reduced spatial resolution, and too strong interactions leading to tip and/or sample modifications. Here we show how the attractive forces in AFM under ambient conditions can be used with advantage to probe surface properties in a very sensitive way even on highly mobile molecules and nanoparticles. We introduce a stable non-contact non-resonant (NCNR) AFM method which enables to reliably perform measurements in the attractive force regime even in air by controlling the tip position in the intimate surface vicinity without touching it. We demonstrate proof-of-concept results on helicene-based macrocycles, DNA on mica, and nanodiamonds on SiO2. We compare the results with other conventional AFM regimes, showing NCNR advantages such as higher spatial resolution, reduced tip contamination, and negligible sample modification. We analyze principle physical and chemical mechanisms influencing the measurements, discuss issues of stability and various possible method implementations. We explain how the NCNR method can be applied in any AFM system by a mere software modification. The method thus opens a new research field for measurements of highly sensitive and mobile nanoscale objects under air and other environments.

Achieving High Performance Stretchable Conjugated Polymers via Donor Structure Engineering

A backbone engineering strategy is developed to tune the mechanical and electrical properties of conjugated polymer semiconductors. Four Donor-Acceptor (D-A) polymers, named PTDPPSe, PTDPPTT, PTDPPBT, and PTDPPTVT, are synthesized using selenophene (Se), thienothiophene (TT), bithiophene (BT), and thienylenevinylenethiophene (TVT) as the donors and siloxane side chain modified diketopyrrolopyrrole (DPP) as acceptor. The influences of the donor structure on the polymer energy level, film morphology, molecular stacking, carrier transport properties, and tensile properties are all examined. The films of PTDPPSe show the best stretchability with crack-onset-strain greater than 100%, but the worst electrical properties with a mobility of only 0.54 cm2  V-1  s-1 . The replacement of the Se donor with larger conjugated donors, that is, TT, BT, and TVT, significantly improves the mobility of conjugated polymers but also leads to reduced stretchability. Remarkably, PTDPPBT exhibits moderate stretchability with crack-onset-strain ≈50% and excellent electrical properties. At 50% strain, it has a mobility of 2.37 cm2 V-1  s-1 parallel to the stretched direction, which is higher than the mobility of most stretchable conjugated polymers in this stretching state.

Emergence of ferroelectricity in a nonferroelectric monolayer

Ferroelectricity in ultrathin two-dimensional (2D) materials has attracted broad interest due to potential applications in nonvolatile memory, nanoelectronics and optoelectronics. However, ferroelectricity is barely explored in materials with native centro or mirror symmetry, especially in the 2D limit. Here, we report the first experimental realization of room-temperature ferroelectricity in van der Waals layered GaSe down to monolayer with mirror symmetric structures, which exhibits strong intercorrelated out-of-plane and in-plane electric polarization. The origin of ferroelectricity in GaSe comes from intralayer sliding of the Se atomic sublayers, which breaks the local structural mirror symmetry and forms dipole moment alignment. Ferroelectric switching is demonstrated in nano devices fabricated with GaSe nanoflakes, which exhibit exotic nonvolatile memory behavior with a high channel current on/off ratio. Our work reveals that intralayer sliding is a new approach to generate ferroelectricity within mirror symmetric monolayer, and offers great opportunity for novel nonvolatile memory devices and optoelectronics applications.

Emerging Halide Perovskite Ferroelectrics

Halide perovskites have gained tremendous attention in the past decade owing to their excellent properties in optoelectronics. Recently, a fascinating property, ferroelectricity, has been discovered in halide perovskites and quickly attracted widespread interest. Compared with traditional perovskite oxide ferroelectrics, halide perovskites display natural advantages such as structural softness, low weight, and easy processing, which are highly desirable in applications pursuing miniaturization and flexibility. This review focuses on the current research progress in halide perovskite ferroelectrics, encompassing the emerging materials systems and their potential applications in ferroelectric photovoltaics, self-powered photodetection, and X-ray detection. The main challenges and possible solutions in the future development of halide perovskite ferroelectric materials are also attempted to be pointed out.

High-speed multiparametric imaging through off-resonance tapping AFM with active probe

Off-resonance tapping (ORT) mode of atomic force microscopy (AFM), based on force-distance curve, is widely concerned due to its advantages of weak tip-sample interaction and concurrent quantitative property mapping. However, the ORT-AFM still has the disadvantage of slow scan speed caused by low modulation frequency. In this paper, we overcome this disadvantage by introducing active probe method. With active probe, the cantilever was directly actuated with the induced strain after applying voltage in the piezoceramic film. In this way, the modulation frequency could be increased to more than an order of magnitude faster than that of traditional ORT, thus improving the scan rate. We demonstrated high-speed multiparametric imaging with the active probe method in ORT-AFM.

Local Piezoelectric Response of Polymer/Ceramic Nanocomposite Fibers

Effective converse piezoelectric coefficient (d33,eff) mapping of poly(vinylidene fluoride) (PVDF) nanofibers with ceramic BaTiO3 nanoparticle inclusions obtained by electrospinning was carried out by piezoresponse force microscopy (PFM) in a peculiar dynamic mode, namely constant-excitation frequency-modulation (CE-FM), particularly suitable for the analysis of compliant materials. Mapping of single nanocomposite fibers was carried out to demonstrate the ability of CE-FM-PFM to investigate the nanostructure of semicrystalline polymers well above their glass transition temperature, such as PVDF, by revealing the distribution of piezoelectric activity of the nanofiber, as well as of the embedded nanoparticles employed. A decreased piezoelectric activity at the nanoparticle site compared to the polymeric fiber was found. This evidence can be rationalized in terms of a tradeoff between the dielectric constants and piezoelectric coefficients of the component materials, as well as on the mutual orientation of polar axes.

Automated Experiments of Local Non-Linear Behavior in Ferroelectric Materials

An automated experiment in multimodal imaging to probe structural, chemical, and functional behaviors in complex materials and elucidate the dominant physical mechanisms that control device function is developed and implemented. Here, the emergence of non-linear electromechanical responses in piezoresponse force microscopy (PFM) is explored. Non-linear responses in PFM can originate from multiple mechanisms, including intrinsic material responses often controlled by domain structure, surface topography that affects the mechanical phenomena at the tip-surface junction, and the presence of surface contaminants. Using an automated experiment to probe the origins of non-linear behavior in ferroelectric lead titanate (PTO) and ferroelectric Al_0.93 B_0.07 N films, it is found that PTO shows asymmetric nonlinear behavior across a/c domain walls and a broadened high nonlinear response region around c/c domain walls. In contrast, for Al_0.93 B_0.07 N, well-poled regions show high linear piezoelectric responses, when paired with low non-linear responses regions that are multidomain show low linear responses and high nonlinear responses. It is shown that formulating dissimilar exploration strategies in deep kernel learning as alternative hypotheses allows for establishing the preponderant physical mechanisms behind the non-linear behaviors, suggesting that automated experiments can potentially discern between competing physical mechanisms. This technique can also be extended to electron, probe, and chemical imaging.

Achieving Ultrasensitivity and Long-Term Durability Simultaneously for Microcantilevers Inspired by a Scorpion's Circular Tip Slits

Microcantilevers are one of the most essential sensitive elements for various mechanical sensors. Their sensing performance determines the index level of a series of sensors. To date, the long-standing trade-off between ultrasensitivity and long-term durability of microcantilevers still remains a challenge. In nature, scorpions can sense vibrations as low as 10 nm amplitude through their circular tip slits sensilla. Such slit sensilla embedded in the exoskeleton of walking legs endure the compressing and stretching of every movement without spontaneous fracture failures. Here, we focused on the structural design of the circular tip slits which concentrate stress effectively and disperse energy smoothly, with the result that the microcantilevers are ultrasensitive and durable simultaneously in a single element. We devised a reproducible circular tip slits cantilever with enhanced sensitivity and ultralow detection limits to monitor 7 nm amplitude vibrations. The sensor possessed excellent durability and remained highly consistent with the correlation coefficient of nearly 0.999 over 100 000 cycles. Furthermore, the circular tip slits cantilever could precisely sense diverse subtle mechanical signals and exhibited potential applications in monitoring respiratory patterns. The simple geometric design can be easily manufactured on various sensory materials for applications requiring ultrahigh sensitivity and long-time durability.

Quantification of the Electromechanical Measurements by Piezoresponse Force Microscopy

Piezoresponse force microscopy (PFM) is widely used for characterization and exploration of the nanoscale properties of ferroelectrics. However, quantification of the PFM signal is challenging due to the convolution of various extrinsic and intrinsic contributions. Although quantification of the PFM amplitude signal has received considerable attention, quantification of the PFM phase signal has not been addressed. A properly calibrated PFM phase signal can provide valuable information on the sign of the local piezoelectric coefficient-an important and nontrivial issue for emerging ferroelectrics. In this work, two complementary methodologies to calibrate the PFM phase signal are discussed. The first approach is based on using a standard reference sample with well-known independently measured piezoelectric coefficients, while the second approach exploits the electrostatic sample-cantilever interactions to determine the parasitic phase offset. Application of these methodologies to studies of the piezoelectric behavior in ferroelectric HfO₂ -based thin-film capacitors reveals intriguing variations in the sign of the longitudinal piezoelectric coefficient, d_33,eff . It is shown that the piezoelectric properties of the HfO₂ -based capacitors are inherently sensitive to their thickness, electrodes, as well as deposition methods, and can exhibit wide variations including a d_33,eff sign change within a single device.

Revealing Fast Cu-Ion Transport and Enhanced Conductivity at the CuInP2S6-In4/3P2S6 Heterointerface

Van der Waals layered ferroelectrics, such as CuInP₂S₆ (CIPS), offer a versatile platform for miniaturization of ferroelectric device technologies. Control of the targeted composition and kinetics of CIPS synthesis enables the formation of stable self-assembled heterostructures of ferroelectric CIPS and nonferroelectric In_4/3P₂S₆ (IPS). Here, we use quantitative scanning probe microscopy methods combined with density functional theory (DFT) to explore in detail the nanoscale variability in dynamic functional properties of the CIPS-IPS heterostructure. We report evidence of fast ionic transport which mediates an appreciable out-of-plane electromechanical response of the CIPS surface in the paraelectric phase. Further, we map the nanoscale dielectric and ionic conductivity properties as we thermally stimulate the ferroelectric-paraelectric phase transition, recovering the local dielectric behavior during this phase transition. Finally, aided by DFT, we reveal a substantial and tunable conductivity enhancement at the CIPS/IPS interface, indicating the possibility of engineering its interfacial properties for next generation device applications.

Electrostatic Contribution to the Photo-Assisted Piezoresponse Force Microscopy by Photo-Induced Surface Charge

The surging interest in manipulating the polarization of piezo/ferroelectric materials by means of light has driven an increasing number of studies toward their light-polarization interaction. One way to investigate such interaction is by performing piezoresponse force microscopy (PFM) while/after the sample is exposed to light illumination. However, caution must be exercised when analyzing and interpreting the data, as demonstrated in this paper, because sizeable photo-response observed in the PFM amplitude image of the sample is shown to be caused by the electrostatic interaction between the photo-induced surface charge and tip. Through photo-assisted Kelvin probe force microscopy (KPFM), positive surface potential is found to be developed near the sample's surface under 405 nm light illumination, whose effects on the measured PFM signal is revealed by the comparative studies on its amplitude curves that are obtained using PFM spectroscopy mode with/without illumination. This work exemplifies the need for complementary use of KPFM, PFM imaging mode, and PFM spectroscopy mode in order to distinguish real behavior from artifacts.

Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment

Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO₂)-based ferroelectrics that are compatible with atomic-layer deposition has opened interesting and promising avenues of research. However, the origins of ferroelectricity and pathways to controlling it in HfO₂ are still mysterious. We demonstrate that local helium (He) implantation can activate ferroelectricity in these materials. The possible competing mechanisms, including He ion-induced molar volume changes, vacancy redistribution, vacancy generation, and activation of vacancy mobility, are analyzed. These findings both reveal the origins of ferroelectricity in this system and open pathways for nanoengineered binary ferroelectrics.

Electrostatically-blind quantitative piezoresponse force microscopy free of distributed-force artifacts

The presence of electrostatic forces and associated artifacts complicates the interpretation of piezoresponse force microscopy (PFM) and electrochemical strain microscopy (ESM). Eliminating these artifacts provides an opportunity for precisely mapping domain wall structures and dynamics, accurately quantifying local piezoelectric coupling coefficients, and reliably investigating hysteretic processes at the single nanometer scale to determine properties and mechanisms which underly important applications including computing, batteries and biology. Here we exploit the existence of an electrostatic blind spot (ESBS) along the length of the cantilever, due to the distributed nature of the electrostatic force, which can be universally used to separate unwanted long range electrostatic contributions from short range electromechanical responses of interest. The results of ESBS-PFM are compared to state-of-the-art interferometric displacement sensing PFM, showing excellent agreement above their respective noise floors. Ultimately, ESBS-PFM allows for absolute quantification of piezoelectric coupling coefficients independent of probe, lab or experimental conditions. As such, we expect the widespread adoption of EBSB-PFM to be a paradigm shift in the quantification of nanoscale electromechanics.

Room-Temperature Ferroelectricity in 1T^{'}-ReS_{2} Multilayers

van der Waals materials possess an innate layer degree of freedom and thus are excellent candidates for exploring emergent two-dimensional ferroelectricity induced by interlayer translation. However, despite being theoretically predicted, experimental realization of this type of ferroelectricity is scarce at the current stage. Here, we demonstrate robust sliding ferroelectricity in semiconducting 1T^{'}-ReS_{2} multilayers via a combined study of theory and experiment. Room-temperature vertical ferroelectricity is observed in two-dimensional 1T^{'}-ReS_{2} with layer number N≥2. The electric polarization stems from the uncompensated charge transfer between layers and can be switched by interlayer sliding. For bilayer 1T^{'}-ReS_{2}, the ferroelectric transition temperature is estimated to be ∼405  K from the second harmonic generation measurements. Our results highlight the importance of interlayer engineering in the realization of atomic-scale ferroelectricity.

Breaking the Fundamental Limitations of Nanoscale Ferroelectric Characterization: Non-Contact Heterodyne Electrostrain Force Microscopy

Perceiving nanoscale ferroelectric phenomena from real space is of great importance for elucidating underlying ferroelectric physics. During the past decades, nanoscale ferroelectric characterization has mainly relied on the Piezoresponse Force Microscopy (PFM) invented in 1992, however, the fundamental limitations of PFM have made the nanoscale ferroelectric studies encounter significant bottlenecks. In this study, a high-resolution non-contact ferroelectric measurement, named Non-Contact Heterodyne Electrostrain Force Microscopy (NC-HEsFM), is introduced. It is demonstrated that NC-HEsFM can operate on multiple eigenmodes to perform ideal high-resolution ferroelectric domain mapping, standard ferroelectric hysteresis loop measurement, and controllable domain manipulation. By using a quartz tuning fork (QTF) sensor, multi-frequency operation, and heterodyne detection schemes, NC-HEsFM achieves a real non-contact yet non-destructive ferroelectric characterization with negligible electrostatic force effect and hence breaks the fundamental limitations of the conventional PFM. It is believed that NC-HEsFM can be extensively used in various ferroelectric or piezoelectric studies with providing substantially improved characterization performance. Meanwhile, the QTF-based force detection makes NC-HEsFM highly compatible for high-vacuum and low-temperature environments, providing ideal conditions for investigating the intrinsic ferroelectric phenomena with the possibility of achieving an atomically resolved ferroelectric characterization.

Characterization of Vegard strain related to exceptionally fast Cu-chemical diffusion in Cu[Formula: see text]Mo[Formula: see text]S[Formula: see text] by an advanced electrochemical strain microscopy method

Electrochemical strain microscopy (ESM) has been developed with the aim of measuring Vegard strains in mixed ionic-electronic conductors (MIECs), such as electrode materials for Li-ion batteries, caused by local changes in the chemical composition. In this technique, a voltage-biased AFM tip is used in contact resonance mode. However, extracting quantitative strain information from ESM experiments is highly challenging due to the complexity of the signal generation process. In particular, electrostatic interactions between tip and sample contribute significantly to the measured ESM signals, and the separation of Vegard strain-induced signal contributions from electrostatically induced signal contributions is by no means a trivial task. Recently, we have published a compensation method for eliminating frequency-independent electrostatic contributions in ESM measurements. Here, we demonstrate the potential of this method for detecting Vegard strain in MIECs by choosing Cu[Formula: see text]Mo[Formula: see text]S[Formula: see text] as a model-type MIEC with an exceptionally high Cu chemical diffusion coefficient. Even for this material, Vegard strains are only measurable around and above room-temperature and with proper elimination of electrostatics. The analyis of the measured Vegards strains gives strong indication that due to a high charge transfer resistance at the tip/interface, the local Cu concentration variations are much smaller than predicted by the local Nernst equation. This suggests that charge transfer resistances have to be analyzed in more detail in future ESM studies.

Tuning-fork-based piezoresponse force microscopy

Surface displacements of a few picometers, occurring after application of an electric potential to piezoelectric materials, can be detected and mapped with nanometer-scale lateral resolution by scanning probe methods, the most notable being piezoresponse force microscopy (PFM). Yet, absolute determination of such displacements, giving access for instance to materials' piezoelectric coefficients, are hindered by both mechanical and electrostatic side-effects, requiring complex experimental and/or post-processing procedures for carrying out reliable results. The employment of quartz tuning-fork force sensors in an intermittent contact mode PFM is able to provide measurements of electrically-induced surface displacements that are not influenced by electrostatic side-effects typical of more conventional cantilever-based PFM. The method is shown to yield piezoeffect mapping on standard ferroelectric test crystals (periodically-poled lithium niobate and triglycine sulfate), as well as on a ferroelectric polymer (PVDF), with no visible influence from the applied dc electric potential.

Correlating Crystallographic Orientation and Ferroic Properties of Twin Domains in Metal Halide Perovskites

Metal halide perovskite (MHP) solar cells have attracted worldwide research interest. Although it has been well established that grain, grain boundary, and grain facet affect MHPs optoelectronic properties, less is known about subgrain structures. Recently, MHP twin stripes, a subgrain feature, have stimulated extensive discussion due to the potential for both beneficial and detrimental effects of ferroelectricity on optoelectronic properties. Connecting the ferroic behavior of twin stripes in MHPs with crystal orientation will be a vital step to understand the ferroic nature and the effects of twin stripes. In this work, we studied the crystallographic orientation and ferroic properties of CH₃NH₃PbI₃ twin stripes, using electron backscatter diffraction (EBSD) and advanced piezoresponse force microscopy (PFM), respectively. Using EBSD, we discovered that the orientation relationship across the twin walls in CH₃NH₃PbI₃ is a 90° rotation about ⟨1̅1̅0⟩, with the ⟨030⟩ and ⟨111⟩ directions parallel to the direction normal to the surface. By careful inspection of CH₃NH₃PbI₃ PFM results including in-plane and out-of-plane PFM measurements, we demonstrate some nonferroelectric contributions to the PFM responses of this CH₃NH₃PbI₃ sample, suggesting that the PFM signal in this CH₃NH₃PbI₃ sample is affected by nonferroelectric and nonpiezoelectric forces. If there is piezoelectric response, it is below the detection sensitivity of our interferometric displacement sensor PFM (<0.615 pm/V). Overall, this work offers an integrated picture describing the crystallographic orientations and the origin of PFM signal of MHPs twin stripes, which is critical to understanding the ferroicity in MHPs.

Imaging Graphene Moiré Superlattices via Scanning Kelvin Probe Microscopy

Moiré superlattices in van der Waals heterostructures are gaining increasing attention because they offer new opportunities to tailor and explore unique electronic phenomena. Using a combination of lateral piezoresponse force microscopy (LPFM) and scanning Kelvin probe microscopy (SKPM), we directly correlate ABAB and ABCA stacked graphene with local surface potential. We find that the surface potential of the ABCA domains is ∼15 mV higher (smaller work function) than that of the ABAB domains. First-principles calculations show that the different work functions between ABCA and ABAB domains arise from the stacking-dependent electronic structure. Moreover, while the moiré superlattice visualized by LPFM can change with time, imaging the surface potential distribution via SKPM appears more stable, enabling the mapping of ABAB and ABCA domains without tip-sample contact-induced effects. Our results provide a new means to visualize and probe local domain stacking in moiré superlattices along with its impact on electronic properties.

Nanoscale Ferroelectric Characterization with Heterodyne Megasonic Piezoresponse Force Microscopy

Piezoresponse force microscopy (PFM), as a powerful nanoscale characterization technique, has been extensively utilized to elucidate diverse underlying physics of ferroelectricity. However, intensive studies of conventional PFM have revealed a growing number of concerns and limitations which are largely challenging its validity and applications. In this study, an advanced PFM technique is reported, namely heterodyne megasonic piezoresponse force microscopy (HM-PFM), which uses 106 to 108 Hz high-frequency excitation and heterodyne method to measure the piezoelectric strain at nanoscale. It is found that HM-PFM can unambiguously provide standard ferroelectric domain and hysteresis loop measurements, and an effective domain characterization with excitation frequency up to ≈110 MHz is demonstrated. Most importantly, owing to the high-frequency and heterodyne scheme, the contributions from both electrostatic force and electrochemical strain can be significantly minimized in HM-PFM. Furthermore, a special measurement of difference-frequency piezoresponse frequency spectrum (DFPFS) is developed on HM-PFM and a distinct DFPFS characteristic is observed on the materials with piezoelectricity. By performing DFPFS measurement, a truly existed but very weak electromechanical coupling in CH3NH3PbI3 perovskite is revealed. It is believed that HM-PFM can be an excellent candidate for the ferroelectric or piezoelectric studies where conventional PFM results are highly controversial.

Reducing Time to Discovery: Materials and Molecular Modeling, Imaging, Informatics, and Integration

Multiscale and multimodal imaging of material structures and properties provides solid ground on which materials theory and design can flourish. Recently, KAIST announced 10 flagship research fields, which include KAIST Materials Revolution: Materials and Molecular Modeling, Imaging, Informatics and Integration (M3I3). The M3I3 initiative aims to reduce the time for the discovery, design and development of materials based on elucidating multiscale processing-structure-property relationship and materials hierarchy, which are to be quantified and understood through a combination of machine learning and scientific insights. In this review, we begin by introducing recent progress on related initiatives around the globe, such as the Materials Genome Initiative (U.S.), Materials Informatics (U.S.), the Materials Project (U.S.), the Open Quantum Materials Database (U.S.), Materials Research by Information Integration Initiative (Japan), Novel Materials Discovery (E.U.), the NOMAD repository (E.U.), Materials Scientific Data Sharing Network (China), Vom Materials Zur Innovation (Germany), and Creative Materials Discovery (Korea), and discuss the role of multiscale materials and molecular imaging combined with machine learning in realizing the vision of M3I3. Specifically, microscopies using photons, electrons, and physical probes will be revisited with a focus on the multiscale structural hierarchy, as well as structure-property relationships. Additionally, data mining from the literature combined with machine learning will be shown to be more efficient in finding the future direction of materials structures with improved properties than the classical approach. Examples of materials for applications in energy and information will be reviewed and discussed. A case study on the development of a Ni-Co-Mn cathode materials illustrates M3I3's approach to creating libraries of multiscale structure-property-processing relationships. We end with a future outlook toward recent developments in the field of M3I3.

Voltage controlled Néel vector rotation in zero magnetic field

Multi-functional thin films of boron (B) doped Cr2O3 exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H. Toggling of antiferromagnetic states is demonstrated in prototype device structures at CMOS compatible temperatures between 300 and 400 K. The boundary magnetization associated with the Néel vector orientation serves as state variable which is read via magnetoresistive detection in a Pt Hall bar adjacent to the B:Cr2O3 film. Switching of the Hall voltage between zero and non-zero values implies Néel vector rotation by 90 degrees. Combined magnetometry, spin resolved inverse photoemission, electric transport and scanning probe microscopy measurements reveal B-dependent TN and resistivity enhancement, spin-canting, anisotropy reduction, dynamic polarization hysteresis and gate voltage dependent orientation of boundary magnetization. The combined effect enables H = 0, voltage controlled, nonvolatile Néel vector rotation at high-temperature. Theoretical modeling estimates switching speeds of about 100 ps making B:Cr2O3 a promising multifunctional single-phase material for energy efficient nonvolatile CMOS compatible memory applications.

Silver nanoparticles: Synthesis, investigation techniques, and properties

The unique silver properties, especially in the form of nanoparticles (NPs), allow to utilize them in numerous applications. For instance, Ag NPs can be utilized for the production of electronic and solar energy harvesting devices, in advanced analytical techniques (NALDI, SERS), catalysis and photocatalysis. Moreover, the Ag NPs can be useful in medicine for bioimaging, biosensing as well as in antibacterial and anticancer therapies. The Ag NPs utilization requires comprehensive knowledge about their features regarding the synthesis approaches as well as exploitation conditions. Unfortunately, a large number of scientific articles provide only restricted information according to the objects under investigation. Additionally, the results could be affected by artifacts introduced with exploited equipment, the utilized technique or sample preparation stages. However, it is rather difficult to get information about problems, which may occur during the studies. Thus, the review provides information about novel trends in the Ag NPs synthesis, among which the physical, chemical, and biological approaches can be found. Basic information about approaches for the control of critical parameters of NPs, i.e. size and shape, was also revealed. It was shown, that the reducing agent, stabilizer, the synthesis environment, including trace ions, have a direct impact on the Ag NPs properties. Further, the capabilities of modern analytical techniques for Ag NPs and nanocomposites investigations were shown, among other microscopic (optical, TEM, SEM, STEM, AFM), spectroscopic (UV-Vis, IR, Raman, NMR, electron spectroscopy, XRD), spectrometric (MALDI-TOF MS, SIMS, ICP-MS), and separation (CE, FFF, gel electrophoresis) techniques were described. The limitations and possible artifacts of the techniques were mentioned. A large number of presented techniques is a distinguishing feature, which makes the review different from others. Finally, the physicochemical and biological properties of Ag NPs were demonstrated. It was shown, that Ag NPs features are dependent on their basic parameters, such as size, shape, chemical composition, etc. At the end of the review, the modern theories of the Ag NPs toxic mechanism were shown in a way that has never been presented before. The review should be helpful for scientists in their own studies, as it can help to prepare experiments more carefully.

Revealing Antiferroelectric Switching and Ferroelectric Wakeup in Hafnia by Advanced Piezoresponse Force Microscopy

Hafnium oxide (HfO₂)-based ferroelectrics offer remarkable promise for memory and logic devices in view of their compatibility with traditional silicon complementary metal oxide semiconductor (CMOS) technology, high switchable polarization, good endurance, and thickness scalability. These factors have led to a steep rise in the level of research on HfO₂ over the past number of years. While measurements on capacitors are promising for understanding macroscopic effects, many open questions regarding the emergence of ferroelectricity and electric field cycling behaviors remain. Continued progress requires information regarding the nanoscale ferroelectric behaviors on the bare surface (i.e., without encapsulation), which is notably absent. To overcome this barrier, we have applied complementary modes of piezoresponse force microscopy with the goal of directly and quantitatively sensing nanoscale ferroelectric behaviors in bare HfO₂ thin films. Our results on 8 nm Si-doped HfO₂ reveal nanoscale domains of local remnant polarization states exhibiting a weak piezoelectric coupling (d_eff) in the range 0.6-1.5 pm/V. While we observed localized enhancement of d_eff during progressive stressing of the bare HfO₂ thin film, we did not detect stable polarization switching which is a prerequisite of ferroelectric switching. This result could be explained using polarization switching spectroscopy which revealed antiferroelectric-like switching in the form of pinched hysteresis loops as well as increasing remnant response with repeated cycling. As such, our results offer a promising route for material scientists who want to explore the nanoscale origins of antiferroelectricity and ferroelectric wakeup in HfO₂.

Better, Faster, and Less Biased Machine Learning: Electromechanical Switching in Ferroelectric Thin Films

Machine-learning techniques are more and more often applied to the analysis of complex behaviors in materials research. Frequently used to identify fundamental behaviors within large and multidimensional datasets, these techniques are strictly based on mathematical models. Thus, without inherent physical or chemical meaning or constraints, they are prone to biased interpretation. The interpretability of machine-learning results in materials science, specifically materials' functionalities, can be vastly improved through physical insights and careful data handling. The use of techniques such as dimensional stacking can provide the much needed physical and chemical constraints, while proper understanding of the assumptions imposed by model parameters can help avoid overinterpretation. These concepts are illustrated by application to recently reported ferroelectric switching experiments in PbZr_0.2 Ti_0.8 O₃ thin films. Through systematic analysis and introduction of physical constraints, it is argued that the behaviors present are not necessarily due to exotic mechanisms previously suggested, but rather well described by classical ferroelectric switching superimposed by non-ferroelectric phenomena, such as electrochemical deformation, electrostatic interactions, and/or charge injection.

Recent Progress in the Nanoscale Evaluation of Piezoelectric and Ferroelectric Properties via Scanning Probe Microscopy

Piezoelectric and ferroelectric materials have garnered significant interest owing to their excellent physical properties and multiple potential applications. Accordingly, the need for evaluating piezoelectric and ferroelectric properties has also increased. The piezoelectric and ferroelectric properties are evaluated macroscopically using laser interferometers and polarization-electric field loop measurements. However, as the research focus is shifted from bulk to nanosized materials, scanning probe microscopy (SPM) techniques have been suggested as an alternative approach for evaluating piezoelectric and ferroelectric properties. In this Progress Report, the recent progress on the nanoscale evaluation of piezoelectric and ferroelectric properties of diverse materials using SPM-based methods is summarized. Among the SPM techniques, the focus is on recent studies that are related to piezoresponse force microscopy and conductive atomic force microscopy; further, the utilization of these two modes to understand piezoelectric and ferroelectric properties at the nanoscale level is discussed. This work can provide guidelines for evaluating the piezoelectric and ferroelectric properties of materials based on SPM techniques.

Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges

The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes of the community on this class of materials to overcome the existing problems of perovskite-based integrated ferroelectrics. However, both the control of ferroelectricity in doped-HfO₂ and the direct characterization at the nanoscale of ferroelectric phenomena, are increasingly difficult to achieve. The main limitations are imposed by the inherent intertwining of ferroelectric and dielectric properties, the role of strain, interfaces and electric field-mediated phase, and polarization changes. In this work, using Si-doped HfO₂ as a material system, we performed a correlative study with four scanning probe techniques for the local sensing of intrinsic ferroelectricity on the oxide surface. Putting each technique in perspective, we demonstrated that different origins of spatially resolved contrast can be obtained, thus highlighting possible crosstalk not originated by a genuine ferroelectric response. By leveraging the strength of each method, we showed how intrinsic processes in ultrathin dielectrics, i.e., electronic leakage, existence and generation of energy states, charge trapping (de-trapping) phenomena, and electrochemical effects, can influence the sensed response. We then proceeded to initiate hysteresis loops by means of tip-induced spectroscopic cycling (i.e., “wake-up”), thus observing the onset of oxide degradation processes associated with this step. Finally, direct piezoelectric effects were studied using the high pressure resulting from the probe’s confinement, noticing the absence of a net time-invariant piezo-generated charge. Our results are critical in providing a general framework of interpretation for multiple nanoscale processes impacting ferroelectricity in doped-hafnia and strategies for sensing it.

Model of frequency-modulated atomic force microscopy for interpretation of noncontact piezoresponse measurements

A model to describe the behavior of the probe of an atomic force microscope (AFM) operated in frequency modulation (FM) dynamic mode with constant excitation (CE) is developed, with the aim of describing recent experiments after the introduction of a noncontact piezoresponse force microscopy (PFM) method based on such an operation mode, named CE-FM-PFM (Labardi et al 2020 Nanotechnology 31, 075707). The model provides insight into improving the accuracy of converse piezoelectric coefficient (d ₃₃) measurements on the local scale in this PFM mode. Its rather general applicability helps to quantify the residual electrostatic contribution in local piezoresponse measurements by AFM, which is anticipated to be strongly mitigated in the CE-FM-PFM compared to the more standard contact-mode PFM.

Mechanical breathing in organic electrochromics

The repetitive size change of the electrode over cycles, termed as mechanical breathing, is a crucial issue limiting the quality and lifetime of organic electrochromic devices. The mechanical deformation originates from the electron transport and ion intercalation in the redox active material. The dynamics of the state of charge induces drastic changes of the microstructure and properties of the host, and ultimately leads to structural disintegration at the interfaces. We quantify the breathing strain and the evolution of the mechanical properties of poly(3,4-propylenedioxythiophene) thin films in-situ using customized environmental nanoindentation. Upon oxidation, the film expands nearly 30% in volume, and the elastic modulus and hardness decrease by a factor of two. We perform theoretical modeling to understand thin film delamination from an indium tin oxide (ITO) current collector under cyclic load. We show that toughening the interface with roughened or silica-nanoparticle coated ITO surface significantly improves the cyclic performance.

Piezoelectricity in Monolayer Hexagonal Boron Nitride

2D hexagonal boron nitride (hBN) is a wide-bandgap van der Waals crystal with a unique combination of properties, including exceptional strength, large oxidation resistance at high temperatures, and optical functionalities. Furthermore, in recent years hBN crystals have become the material of choice for encapsulating other 2D crystals in a variety of technological applications, from optoelectronic and tunneling devices to composites. Monolayer hBN, which has no center of symmetry, is predicted to exhibit piezoelectric properties, yet experimental evidence is lacking. Here, by using electrostatic force microscopy, this effect is observed as a strain-induced change in the local electric field around bubbles and creases, in agreement with theoretical calculations. No piezoelectricity is found in bilayer and bulk hBN, where the center of symmetry is restored. These results add piezoelectricity to the known properties of monolayer hBN, which makes it a desirable candidate for novel electromechanical and stretchable optoelectronic devices, and pave a way to control the local electric field and carrier concentration in van der Waals heterostructures via strain. The experimental approach used here also shows a way to investigate the piezoelectric properties of other materials on the nanoscale by using electrostatic scanning probe techniques.