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Yang H, Zhang Y, Hu F, Li Z, Wu D, Chen X. Comprehensively Modulated Sub-Attojoule Operated Optoelectronic Synapses for Image Encryption and Inpainting. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39207873 DOI: 10.1021/acsami.4c08070] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/04/2024]
Abstract
High-performance optoelectronic synaptic transistors play a crucial role in developing and emulating artificial visual systems. However, due to the predominant use of single-structure material modulation in optimizing optoelectronic synapses, their energy consumption significantly trails behind that of electronic synapses by several orders of magnitude. Herein, polymer dielectric layers and optimized contact strategies are adopted to realize the ultralow consumption optoelectronic synapses. Integration of polyimide dielectric significantly enhances photogenerated charge carrier dissociation, leading to substantial improvements in photoresponsivity (1.5 × 106 A·W-1), photodetectivity (6.9 × 1012 Jones), and external quantum efficiency (4.0 × 108%). Additionally, optimized contact properties augment their appeal for ultralow energy consumption in optoelectronic synapse applications. Excitatory postsynaptic current is triggered at an incredibly low voltage of 5 μV and boosts an impressively low energy consumption of 0.05 aJ, ranking among the best-reported results in this field. Next, we demonstrate an integrated system combining the MoS2 optoelectronic synapses with a recurrent neural network enabling 100% accurate recognition of optical signals, particularly in scenarios with aJ-leveled energy consumption. Finally, an image encryption system has been developed, in which images are encrypted by photoelectronic conversion of synapse arrays with random voltage settings and decrypted according to the recurrent neural network-based accuracy. More importantly, once partially damaged images are encrypted, through the decryption image inpainting can be realized due to the high accuracy. The proposed innovative approach holds promise for advancing artificial intelligence applications with improved energy efficiency, information security, and computational capabilities.
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Affiliation(s)
- Hui Yang
- School of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Yifei Zhang
- Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China
| | - Fangzhen Hu
- School of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Ziqing Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
| | - Dongping Wu
- Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China
| | - Xi Chen
- School of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, China
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2
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Khan R, Rahman NU, Hayat MF, Ghernaout D, Salih AAM, Ashraf GA, Samad A, Mahmood MA, Rahman N, Sohail M, Iqbal S, Abdullaev S, Khan A. Unveiling cutting-edge developments: architectures and nanostructured materials for application in optoelectronic artificial synapses. NANOSCALE 2024; 16:14589-14620. [PMID: 39011743 DOI: 10.1039/d4nr00904e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/17/2024]
Abstract
One possible result of low-level characteristics in the traditional von Neumann formulation system is brain-inspired photonics technology based on human brain idea. Optoelectronic neural devices, which are accustomed to imitating the sensory role of biological synapses by adjusting connection measures, can be used to fabricate highly reliable neurologically calculating devices. In this case, nanosized materials and device designs are attracting attention since they provide numerous potential benefits in terms of limited cool contact, rapid transfer fluidity, and the capture of photocarriers. In addition, the combination of classic nanosized photodetectors with recently generated digital synapses offers promising results in a variety of practical applications, such as data processing and computation. Herein, we present the progress in constructing improved optoelectronic synaptic devices that rely on nanomaterials, for example, 0-dimensional (quantum dots), 1-dimensional, and 2-dimensional composites, besides the continuously developing mixed heterostructures. Furthermore, the challenges and potential prospects linked with this field of study are discussed in this paper.
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Affiliation(s)
- Rajwali Khan
- National Water and Energy Center, United Arab Emirates University, Al Ain, 15551, United Arab Emirates.
- Department of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, Pakistan
| | - Naveed Ur Rahman
- National Water and Energy Center, United Arab Emirates University, Al Ain, 15551, United Arab Emirates.
- Department of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, Pakistan
| | | | - Djamel Ghernaout
- Chemical Engineering Department, College of Engineering, University of Ha'il, PO Box 2440, Ha'il 81441, Saudi Arabia
- Chemical Engineering Department, Faculty of Engineering, University of Blida, PO Box 270, Blida 09000, Algeria
| | - Alsamani A M Salih
- Chemical Engineering Department, College of Engineering, University of Ha'il, PO Box 2440, Ha'il 81441, Saudi Arabia
- Department of Chemical Engineering, Faculty of Engineering, Al Neelain University, Khartoum 12702, Sudan
| | | | - Abdus Samad
- Department of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, Pakistan
| | | | - Nasir Rahman
- Department of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, Pakistan
| | - Mohammad Sohail
- Department of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, Pakistan
| | - Shahid Iqbal
- Department of Physics, University of Wisconsin, La Crosse, WI 54601, USA
| | - Sherzod Abdullaev
- Senior Researcher, Engineering School, Central Asian University, Tashkent, Uzbekistan
- Senior Researcher, Scientific and Innovation Department, Tashkent State Pedagogical University, Uzbekistan
| | - Alamzeb Khan
- Yale University School of Medicine, New Haven, Connecticut, USA
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3
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Sui N, Ji Y, Li M, Zheng F, Shao S, Li J, Liu Z, Wu J, Zhao J, Li L. Photoprogrammed Multifunctional Optoelectronic Synaptic Transistor Arrays Based on Photosensitive Polymer-Sorted Semiconducting Single-Walled Carbon Nanotubes for Image Recognition. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2401794. [PMID: 38828719 PMCID: PMC11304235 DOI: 10.1002/advs.202401794] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2024] [Revised: 04/12/2024] [Indexed: 06/05/2024]
Abstract
The development of neuromorphic optoelectronic systems opens up the possibility of the next generation of artificial vision. In this work, the novel broadband (from 365 to 940 nm) and multilevel storage optoelectronic synaptic thin-film transistor (TFT) arrays are reported using the photosensitive conjugated polymer (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(bithiophene)], F8T2) sorted semiconducting single-walled carbon nanotubes (sc-SWCNTs) as channel materials. The broadband synaptic responses are inherited to absorption from both photosensitive F8T2 and sorted sc-SWCNTs, and the excellent optoelectronic synaptic behaviors with 200 linearly increasing conductance states and long retention time > 103 s are attributed to the superior charge trapping at the AlOx dielectric layer grown by atomic layer deposition. Furthermore, the synaptic TFTs can achieve IOn/IOff ratios up to 106 and optoelectronic synaptic plasticity with the low power consumption (59 aJ per single pulse), which can simulate not only basic biological synaptic functions but also optical write and electrical erase, multilevel storage, and image recognition. Further, a novel Spiking Neural Network algorithm based on hardware characteristics is designed for the recognition task of Caltech 101 dataset and multiple features of the images are successfully extracted with higher accuracy (97.92%) of the recognition task from the multi-frequency curves of the optoelectronic synaptic devices.
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Affiliation(s)
- Nianzi Sui
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
- Division of Nanodevices and Related NanomaterialsSuzhou Institute of Nano‐Tech and Nano‐BionicsChinese Academy of SciencesNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
| | - Yixi Ji
- School of Artificial IntelligenceXidian UniversityXi'an710071P. R. China
| | - Min Li
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
- Division of Nanodevices and Related NanomaterialsSuzhou Institute of Nano‐Tech and Nano‐BionicsChinese Academy of SciencesNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
| | - Fanyuan Zheng
- Department of Mechanical EngineeringThe University of Hong KongPokfulam RoadHong Kong999077P. R. China
| | - Shuangshuang Shao
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
- Division of Nanodevices and Related NanomaterialsSuzhou Institute of Nano‐Tech and Nano‐BionicsChinese Academy of SciencesNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
| | - Jiaqi Li
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
- Division of Nanodevices and Related NanomaterialsSuzhou Institute of Nano‐Tech and Nano‐BionicsChinese Academy of SciencesNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
| | - Zhaoxin Liu
- School of Artificial IntelligenceXidian UniversityXi'an710071P. R. China
| | - Jinjian Wu
- School of Artificial IntelligenceXidian UniversityXi'an710071P. R. China
| | - Jianwen Zhao
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
- Division of Nanodevices and Related NanomaterialsSuzhou Institute of Nano‐Tech and Nano‐BionicsChinese Academy of SciencesNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
| | - Lain‐Jong Li
- Department of Mechanical EngineeringThe University of Hong KongPokfulam RoadHong Kong999077P. R. China
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Jin DG, Yu HY. First Demonstration of Yttria-Stabilized Hafnia-Based Long-Retention Solid-State Electrolyte-Gated Transistor for Human-Like Neuromorphic Computing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309467. [PMID: 38100229 DOI: 10.1002/smll.202309467] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/30/2023] [Revised: 11/24/2023] [Indexed: 05/12/2024]
Abstract
Electrolyte-gated transistors have strong potential for high-performance artificial synapses in neuromorphic bio-interfaces owing to their outstanding synaptic characteristics, low power consumption, and human-like mechanisms. However, the short retention time is a hurdle to overcome owing to the natural diffusion of protons. Here, a novel modulation technique of ionic conductivity is proposed with yttria-stabilized hafnia for the first time to enhance the retention characteristic of a solid-state electrolyte-gated transistor-based artificial synapse. With the optimization of the ionic conductivity in yttria-stabilized hafnia, a high retention time of over 300 s and remarkable synaptic characteristics are accomplished by regulating channel conductance with precise modulation of the strength of the proton-electron coupling intensity along the input signals. Furthermore, pattern recognition simulation is conducted based on the measured synaptic characteristics, exhibiting 94.41% of operation accuracy, which implies a promising solution for neuromorphic in-memory computing systems with a high operation accuracy and low power consumption.
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Affiliation(s)
- Dong-Gyu Jin
- School of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, South Korea
| | - Hyun-Yong Yu
- School of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, South Korea
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Deng Y, Liu S, Ma X, Guo S, Zhai B, Zhang Z, Li M, Yu Y, Hu W, Yang H, Kapitonov Y, Han J, Wu J, Li Y, Zhai T. Intrinsic Defect-Driven Synergistic Synaptic Heterostructures for Gate-Free Neuromorphic Phototransistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309940. [PMID: 38373410 DOI: 10.1002/adma.202309940] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Revised: 01/28/2024] [Indexed: 02/21/2024]
Abstract
The optoelectronic synaptic devices based on two-dimensional (2D) materials offer great advances for future neuromorphic visual systems with dramatically improved integration density and power efficiency. The effective charge capture and retention are considered as one vital prerequisite to realizing the synaptic memory function. However, the current 2D synaptic devices are predominantly relied on materials with artificially-engineered defects or intricate gate-controlled architectures to realize the charge trapping process. These approaches, unfortunately, suffer from the degradation of pristine materials, rapid device failure, and unnecessary complication of device structures. To address these challenges, an innovative gate-free heterostructure paradigm is introduced herein. The heterostructure presents a distinctive dome-like morphology wherein a defect-rich Fe7S8 core is enveloped snugly by a curved MoS2 dome shell (Fe7S8@MoS2), allowing the realization of effective photocarrier trapping through the intrinsic defects in the adjacent Fe7S8 core. The resultant neuromorphic devices exhibit remarkable light-tunable synaptic behaviors with memory time up to ≈800 s under single optical pulse, thus demonstrating great advances in simulating visual recognition system with significantly improved image recognition efficiency. The emergence of such heterostructures foreshadows a promising trajectory for underpinning future synaptic devices, catalyzing the realization of high-efficiency and intricate visual processing applications.
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Affiliation(s)
- Yao Deng
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Shenghong Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xiaoxi Ma
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Shuyang Guo
- School of Computer Science and Artificial Intelligence, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Baoxing Zhai
- Institute of Semiconductors, Henan Academy of Sciences, Zhengzhou, 450046, P. R. China
| | - Zihan Zhang
- Department of Mechanics, School of Aerospace Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Manshi Li
- Wuhan National High Magnetic Field Centre, Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yimeng Yu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Nanostructure Research Center, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Wenhua Hu
- School of Computer Science and Artificial Intelligence, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Hui Yang
- Department of Mechanics, School of Aerospace Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yury Kapitonov
- Department of Photonics, Saint Petersburg State University, Saint Petersburg, 199034, Russia
| | - Junbo Han
- Wuhan National High Magnetic Field Centre, Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jinsong Wu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Nanostructure Research Center, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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6
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Wang K, Liao Y, Li W, Li J, Su H, Chen R, Park JH, Zhang Y, Zhou X, Wu C, Liu Z, Guo T, Kim TW. Memory-electroluminescence for multiple action-potentials combination in bio-inspired afferent nerves. Nat Commun 2024; 15:3505. [PMID: 38664383 PMCID: PMC11045776 DOI: 10.1038/s41467-024-47641-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Accepted: 04/05/2024] [Indexed: 04/28/2024] Open
Abstract
The development of optoelectronics mimicking the functions of the biological nervous system is important to artificial intelligence. This work demonstrates an optoelectronic, artificial, afferent-nerve strategy based on memory-electroluminescence spikes, which can realize multiple action-potentials combination through a single optical channel. The memory-electroluminescence spikes have diverse morphologies due to their history-dependent characteristics and can be used to encode distributed sensor signals. As the key to successful functioning of the optoelectronic, artificial afferent nerve, a driving mode for light-emitting diodes, namely, the non-carrier injection mode, is proposed, allowing it to drive nanoscale light-emitting diodes to generate a memory-electroluminescence spikes that has multiple sub-peaks. Moreover, multiplexing of the spikes can be obtained by using optical signals with different wavelengths, allowing for a large signal bandwidth, and the multiple action-potentials transmission process in afferent nerves can be demonstrated. Finally, sensor-position recognition with the bio-inspired afferent nerve is developed and shown to have a high recognition accuracy of 98.88%. This work demonstrates a strategy for mimicking biological afferent nerves and offers insights into the construction of artificial perception systems.
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Affiliation(s)
- Kun Wang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Yitao Liao
- College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Wenhao Li
- College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Junlong Li
- College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Hao Su
- College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Rong Chen
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
| | - Jae Hyeon Park
- Department of Electronic and Computer Engineering, Hanyang University, Seoul, 133-791, Korea
| | - Yongai Zhang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
| | - Xiongtu Zhou
- College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
| | - Chaoxing Wu
- College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China.
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China.
| | - Zhiqiang Liu
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
| | - Tailiang Guo
- College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China.
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China.
| | - Tae Whan Kim
- Department of Electronic and Computer Engineering, Hanyang University, Seoul, 133-791, Korea.
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7
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Park J, Kim JO, Kang SW. Lateral heterostructures of WS 2 and MoS 2 monolayers for photo-synaptic transistor. Sci Rep 2024; 14:6922. [PMID: 38519613 PMCID: PMC10959970 DOI: 10.1038/s41598-024-57642-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Accepted: 03/20/2024] [Indexed: 03/25/2024] Open
Abstract
Von Neumann architecture-based computing, while widely successful in personal computers and embedded systems, faces inherent challenges including the von Neumann bottleneck, particularly amidst the ongoing surge of data-intensive tasks. Neuromorphic computing, designed to integrate arithmetic, logic, and memory operations, has emerged as a promising solution for improving energy efficiency and performance. This approach requires the construction of an artificial synaptic device that can simultaneously perform signal processing, learning, and memory operations. We present a photo-synaptic device with 32 analog multi-states by exploiting field-effect transistors based on the lateral heterostructures of two-dimensional (2D) WS2 and MoS2 monolayers, formed through a two-step metal-organic chemical vapor deposition process. These lateral heterostructures offer high photoresponsivity and enhanced efficiency of charge trapping at the interface between the heterostructures and SiO2 due to the presence of the WS2 monolayer with large trap densities. As a result, it enables the photo-synaptic transistor to implement synaptic behaviors of long-term plasticity and high recognition accuracy. To confirm the feasibility of the photo-synapse, we investigated its synaptic characteristics under optical and electrical stimuli, including the retention of excitatory post-synaptic currents, potentiation, habituation, nonlinearity factor, and paired-pulse facilitation. Our findings suggest the potential of versatile 2D material-synapse with a high density of device integration.
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Affiliation(s)
- Jaeseo Park
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
| | - Jun Oh Kim
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
| | - Sang-Woo Kang
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea.
- Precision Measurement, University of Science and Technology, Daejeon, 34113, Republic of Korea.
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8
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Liu D, Zhang J, Shi Q, Sun T, Xu Y, Li L, Tian L, Xiong L, Zhang J, Huang J. Humidity/Oxygen-Insensitive Organic Synaptic Transistors Based on Optical Radical Effect. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305370. [PMID: 37506027 DOI: 10.1002/adma.202305370] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 07/15/2023] [Indexed: 07/30/2023]
Abstract
For most organic synaptic transistors based on the charge trapping effect, different atmosphere conditions lead to significantly different device performance. Some devices even lose the synaptic responses under vacuum or inert atmosphere. The stable device performance of these organic synaptic transistors under varied working environments with different humidity and oxygen levels can be a challenge. Herein, a moisture- and oxygen-insensitive organic synaptic device based on the organic semiconductor and photoinitiator molecules is reported. Unlike the widely reported charge trapping effect, the photoinduced free radical is utilized to realize the photosynaptic performance. The resulting synaptic transistor displays typical excitatory postsynaptic current, paired-pulse facilitation, learning, and forgetting behaviors. Furthermore, the device exhibits decent and stable photosynaptic performances under high humidity and vacuum conditions. This type of organic synaptic device also demonstrates high potential in ultraviolet B perception based on its environmental stability and broad ultraviolet detection capability. Finally, the contrast-enhanced capability of the device is successfully validated by the single-layer-perceptron/double-layer network based Modified National Institute of Standards and Technology pattern recognition. This work could have important implications for the development of next-generation environment-stable organic synaptic devices and systems.
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Affiliation(s)
- Dapeng Liu
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Junyao Zhang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Qianqian Shi
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Tongrui Sun
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Yutong Xu
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Li Li
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Li Tian
- Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital Affiliated to Tongji University, Tongji University, Shanghai, 200434, P. R. China
| | - Lize Xiong
- Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital Affiliated to Tongji University, Tongji University, Shanghai, 200434, P. R. China
| | - Jianhua Zhang
- Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, 200072, P. R. China
| | - Jia Huang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
- Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital Affiliated to Tongji University, Tongji University, Shanghai, 200434, P. R. China
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9
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Wang Y, Yuan Q, Meng X, Sun Y. Bio-inspired synaptic behavior simulation in thin-film transistors based on molybdenum disulfide. J Chem Phys 2023; 159:184702. [PMID: 37937938 DOI: 10.1063/5.0174857] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/03/2023] [Accepted: 10/19/2023] [Indexed: 11/09/2023] Open
Abstract
Synaptic behavior simulation in transistors based on MoS2 has been reported. MoS2 was utilized as the active layer to prepare ambipolar thin-film transistors. The excitatory postsynaptic current phenomenon was simulated, observing a gradual voltage decay following the removal of applied pulses, ultimately resulting in a response current slightly higher than the initial current. Subsequently, ±5 V voltages were separately applied for ten consecutive pulse voltage tests, revealing short-term potentiation and short-term depression behaviors. After 92 consecutive positive pulses, the device current transitioned from an initial value of 0.14 to 28.3 mA. Similarly, following 88 consecutive negative pulses, the device current changed, indicating long-term potentiation and long-term depression behaviors. We also employed a pair of continuous triangular wave pulses to evaluate paired-pulse facilitation behavior, observing that the response current of the second stimulus pulse was ∼1.2× greater than that of the first stimulus pulse. The advantages and prospects of using MoS2 as a material for thin-film transistors were thoroughly displayed.
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Affiliation(s)
- Yufei Wang
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
| | - Qi Yuan
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
| | - Xinru Meng
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
| | - Yanmei Sun
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
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10
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Dutta R, Bala A, Sen A, Spinazze MR, Park H, Choi W, Yoon Y, Kim S. Optical Enhancement of Indirect Bandgap 2D Transition Metal Dichalcogenides for Multi-Functional Optoelectronic Sensors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303272. [PMID: 37453927 DOI: 10.1002/adma.202303272] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2023] [Revised: 06/21/2023] [Accepted: 07/03/2023] [Indexed: 07/18/2023]
Abstract
The unique electrical and optical properties of transition metal dichalcogenides (TMDs) make them attractive nanomaterials for optoelectronic applications, especially optical sensors. However, the optical characteristics of these materials are dependent on the number of layers. Monolayer TMDs have a direct bandgap that provides higher photoresponsivity compared to multilayer TMDs with an indirect bandgap. Nevertheless, multilayer TMDs are more appropriate for various photodetection applications due to their high carrier density, broad spectral response from UV to near-infrared, and ease of large-scale synthesis. Therefore, this review focuses on the modification of the optical properties of devices based on indirect bandgap TMDs and their emerging applications. Several successful developments in optical devices are examined, including band structure engineering, device structure optimization, and heterostructures. Furthermore, it introduces cutting-edge techniques and future directions for optoelectronic devices based on multilayer TMDs.
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Affiliation(s)
- Riya Dutta
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Arindam Bala
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Anamika Sen
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Michael Ross Spinazze
- Waterloo Institute for Nanotechnology and the Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
| | - Heekyeong Park
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Woong Choi
- School of Materials Science & Engineering, Kookmin University, Seoul, 02707, Republic of Korea
| | - Youngki Yoon
- Waterloo Institute for Nanotechnology and the Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
| | - Sunkook Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
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11
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Mawlong LPL, Hoang AT, Chintalapalli J, Ji S, Lee K, Kim K, Ahn JH. Reduced Defect Density in MOCVD-Grown MoS 2 by Manipulating the Precursor Phase. ACS APPLIED MATERIALS & INTERFACES 2023; 15:47359-47367. [PMID: 37756669 DOI: 10.1021/acsami.3c09027] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/29/2023]
Abstract
Advancements in the synthesis of large-area, high-quality two-dimensional transition metal dichalcogenides such as MoS2 play a crucial role in the development of future electronic and optoelectronic devices. The presence of defects formed by sulfur vacancies in MoS2 results in low photoluminescence emission and imparts high n-type doping behavior, thus substantially affecting material quality. Herein, we report a new method in which single-phase (liquid) precursors are used for the metal-organic chemical vapor deposition (MOCVD) growth of a MoS2 film. Furthermore, we fabricated a high-performance photodetector (PD) and achieved improved photoresponsivity and faster photoresponse in the spectral range 405-637 nm compared to those of PDs fabricated by the conventional MOCVD method. In addition, the fabricated MoS2 thin film showed a threshold voltage shift in the positive gate bias direction owing to the reduced number of S vacancy defects in the MoS2 lattice. Thus, our method significantly improved the synthesis of monolayer MoS2 and can expand the application scope of high-quality, atomically thin materials in large-scale electronic and optoelectronic devices.
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Affiliation(s)
- Larionette P L Mawlong
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Jyothi Chintalapalli
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Kihyun Lee
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul 03722, Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Kwanpyo Kim
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul 03722, Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
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12
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Wang Y, Yin L, Huang S, Xiao R, Zhang Y, Li D, Pi X, Yang D. Silicon-Nanomembrane-Based Broadband Synaptic Phototransistors for Neuromorphic Vision. NANO LETTERS 2023; 23:8460-8467. [PMID: 37721358 DOI: 10.1021/acs.nanolett.3c01853] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/19/2023]
Abstract
Neuromorphic vision has been attracting much attention due to its advantages over conventional machine vision (e.g., lower data redundancy and lower power consumption). Here we develop synaptic phototransistors based on the silicon nanomembrane (Si NM), which are coupled with lead sulfide quantum dots (PbS QDs) and poly(3-hexylthiophene) (P3HT) to form a heterostructure with distinct photogating. Synaptic phototransistors with optical stimulation have outstanding synaptic functionalities ranging from ultraviolet (UV) to near-infrared (NIR). The broadband synaptic functionalities enable an array of synaptic phototransistors to achieve the perception of brightness and color. In addition, an array of synaptic phototransistors is capable of simultaneous sensing, processing, and memory, which well mimics human vision.
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Affiliation(s)
- Yue Wang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, Hangzhou, Zhejiang 311215, China
| | - Lei Yin
- State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Shijie Huang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Rulei Xiao
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures and College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
| | - Yiqiang Zhang
- School of Materials Science and Engineering & College of Chemistry, Zhengzhou University, Zhengzhou, Henan 450001, China
| | - Dongke Li
- State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, Hangzhou, Zhejiang 311215, China
| | - Xiaodong Pi
- State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, Hangzhou, Zhejiang 311215, China
| | - Deren Yang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, Hangzhou, Zhejiang 311215, China
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13
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Gao X, Zhu J, Yin J. Mechanistic Insights into Synaptic Plasticity Behaviors of Electrolyte-Gated Flexible Transistor Devices. ACS APPLIED MATERIALS & INTERFACES 2023; 15:39530-39538. [PMID: 37556764 DOI: 10.1021/acsami.3c07235] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/11/2023]
Abstract
Biological synaptic function simulation using flexible electronic devices based on low-dimensional semiconductor materials is an emerging and rapidly evolving research field with promising applications in brain-like computers and artificial intelligence systems. In this work, we present the fabrication of solution compatible MoS2 thin-film transistors on the ultrathin polymethyl methacrylate substrates via layer-by-layer assembly followed by a one-step transfer printing method. The MoS2 transport channel is controlled by ionic liquid gating with 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, resulting in excellent synaptic performances for emulating memory and perception synapse functions. To investigate the synaptic behaviors, we conduct a series of synaptic spike-dependent experiments and propose an advanced model that delineates the long-term plasticity and short-term plasticity with separate characteristic factors. These findings provide insights into the fundamental mechanisms of synaptic plasticity in electric double-layer devices and contribute to a better understanding of their synaptic performances. In addition, we examine the effects of bending conditions on synaptic plasticity and synaptic weights, unveiling the synergistic interplay between mechanical deformation and synaptic behaviors. Our experimental results, combined with the developed model, are in good agreement and shed light on the influence of mechanical flexibility on the synaptic properties of the devices. In summary, this study establishes a solid foundation for further development of flexible synaptic devices from both practical and theoretical perspectives.
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Affiliation(s)
- Xiangxiang Gao
- School of Materials Science and Engineering, Nankai University, Tianjin 300071, China
- Advanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710071, China
| | - Jian Zhu
- School of Materials Science and Engineering, Nankai University, Tianjin 300071, China
| | - Jun Yin
- School of Materials Science and Engineering, Nankai University, Tianjin 300071, China
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14
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Lahane TK, Sharma S, Desu M, Ando Y, Pandey SS, Singh V. Enhancing the Performance of Organic Phototransistors Based on Oriented Floating Films of P3HT Assisted by Al-Island Deposition. MATERIALS (BASEL, SWITZERLAND) 2023; 16:5249. [PMID: 37569953 PMCID: PMC10419503 DOI: 10.3390/ma16155249] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2023] [Revised: 07/13/2023] [Accepted: 07/23/2023] [Indexed: 08/13/2023]
Abstract
The fabrication of high-performance Organic Phototransistors (OPTs) by depositing Al-islands atop Poly(3-hexylthiophene) (P3HT) thin film coated using the unidirectional floating-film transfer method (UFTM) has been realized. Further, the effect of Al-island thickness on the OPTs' performance has been intensively investigated using X-ray photoelectron spectroscopy, X-ray Diffraction, Atomic force microscopy and UV-Vis spectroscopy analysis. Under the optimized conditions, OPTs' mobility and on-off ratio were found to be 2 × 10-2 cm2 V-1 s-1 and 3 × 104, respectively. Further, the device exhibited high photosensitivity of 105, responsivity of 339 A/W, detectivity of 3 × 1014 Jones, and external quantum efficiency of 7.8 × 103% when illuminated with a 525 nm LED laser (0.3 mW/cm2).
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Affiliation(s)
- Tejswini K. Lahane
- Molecular and Nanoelectronics Research Group (MNRG), Department of Electrical Engineering, IIT Indore, Indore 453552, Madhya Pradesh, India;
| | - Shubham Sharma
- Graduate School of Life Science and System Engineering, Kyushu Institute of Technology, 2-4, Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan; (S.S.); (M.D.); (Y.A.)
| | - Moulika Desu
- Graduate School of Life Science and System Engineering, Kyushu Institute of Technology, 2-4, Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan; (S.S.); (M.D.); (Y.A.)
| | - Yoshito Ando
- Graduate School of Life Science and System Engineering, Kyushu Institute of Technology, 2-4, Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan; (S.S.); (M.D.); (Y.A.)
| | - Shyam S. Pandey
- Graduate School of Life Science and System Engineering, Kyushu Institute of Technology, 2-4, Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan; (S.S.); (M.D.); (Y.A.)
| | - Vipul Singh
- Molecular and Nanoelectronics Research Group (MNRG), Department of Electrical Engineering, IIT Indore, Indore 453552, Madhya Pradesh, India;
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15
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Park H, Sen A, Kaniselvan M, AlMutairi A, Bala A, Lee LP, Yoon Y, Kim S. A Wafer-Scale Nanoporous 2D Active Pixel Image Sensor Matrix with High Uniformity, High Sensitivity, and Rapid Switching. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210715. [PMID: 36807606 DOI: 10.1002/adma.202210715] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2022] [Revised: 01/15/2023] [Indexed: 06/18/2023]
Abstract
2D transition-metal dichalcogenides (TMDs) have been successfully developed as novel ubiquitous optoelectronics owing to their excellent electrical and optical characteristics. However, active-matrix image sensors based on TMDs have limitations owing to the difficulty of fabricating large-area integrated circuitry and achieving high optical sensitivity. Herein, a large-area uniform, highly sensitive, and robust image sensor matrix with active pixels consisting of nanoporous molybdenum disulfide (MoS2 ) phototransistors and indium-gallium-zinc oxide (IGZO) switching transistors is reported. Large-area uniform 4-inch wafer-scale bilayer MoS2 films are synthesized by radio-frequency (RF) magnetron sputtering and sulfurization processes and patterned to be a nanoporous structure consisting of an array of periodic nanopores on the MoS2 surface via block copolymer lithography. Edge exposure on the nanoporous bilayer MoS2 induces the formation of subgap states, which promotes a photogating effect to obtain an exceptionally high photoresponsivity of 5.2 × 104 A W-1 . A 4-inch-wafer-scale image mapping is successively achieved using this active-matrix image sensor by controlling the device sensing and switching states. The high-performance active-matrix image sensor is state-of-the-art in 2D material-based integrated circuitry and pixel image sensor applications.
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Affiliation(s)
- Heekyeong Park
- Department of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- Harvard Institute of Medicine, Harvard Medical School, Harvard University, Brigham and Women's Hospital, Boston, MA, 02115, USA
| | - Anamika Sen
- Department of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Manasa Kaniselvan
- Waterloo Institute for Nanotechnology (WIN) & Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON, N2L 3G1, Canada
| | - AbdulAziz AlMutairi
- Waterloo Institute for Nanotechnology (WIN) & Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON, N2L 3G1, Canada
| | - Arindam Bala
- Department of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Luke P Lee
- Harvard Institute of Medicine, Harvard Medical School, Harvard University, Brigham and Women's Hospital, Boston, MA, 02115, USA
- Institute of Quantum Biophysics, Department of Biophysics, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Youngki Yoon
- Waterloo Institute for Nanotechnology (WIN) & Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON, N2L 3G1, Canada
| | - Sunkook Kim
- Department of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
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16
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Wang Y, Wang K, Hu X, Wang Y, Gao W, Zhang Y, Liu Z, Zheng Y, Xu K, Yang D, Pi X. Optogenetics-Inspired Fluorescent Synaptic Devices with Nonvolatility. ACS NANO 2023; 17:3696-3704. [PMID: 36745006 DOI: 10.1021/acsnano.2c10816] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Given the synergy of optogenetics and bioimaging in neuroscience, it is possible for light to simultaneously modulate and visualize synaptic events of optoelectronic synaptic devices, which are building blocks of a neuromorphic computing system with optoelectronic integration. Here we demonstrate the realization of the simultaneous modulation and visualization of synaptic events by using optically stimulated synaptic devices based on the heterostructure of fluorescent silicon quantum dots (Si QDs) and monolayer molybdenum disulfide (MoS2). The charge-transfer-enabled photogating effect of the Si QDs/MoS2 heterostructure leads to the nonvolatility of the synaptic devices, which exhibit important synaptic functionalities and synchronous fluorescence upon optical stimulation. An array of the Si QDs/MoS2 optoelectronic synaptic devices is well-employed to mimic robust neural population coding. Defective devices in this array may be pinpointed by the absence of their fluorescence. This work has an important implication for the development of synaptic devices facilitating the system-level diagnosis and device-level positioning of a neuromorphic computing system.
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Affiliation(s)
- Yue Wang
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang310027, China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou, Zhejiang311215, China
| | - Kun Wang
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang310027, China
| | - Xiangyu Hu
- Zhejiang Province Key Laboratory of Quantum Technology and Device & Department of Physics, Zhejiang University, Hangzhou, Zhejiang310027, China
| | - Ya'kun Wang
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
| | - Wandong Gao
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou, Zhejiang311215, China
| | - Yiqiang Zhang
- School of Materials Science and Engineering & College of Chemistry, Zhengzhou University, Zhengzhou, Henan450001, China
| | - Zhenghui Liu
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
| | - Yi Zheng
- Zhejiang Province Key Laboratory of Quantum Technology and Device & Department of Physics, Zhejiang University, Hangzhou, Zhejiang310027, China
| | - Ke Xu
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
| | - Deren Yang
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang310027, China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou, Zhejiang311215, China
| | - Xiaodong Pi
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang310027, China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou, Zhejiang311215, China
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17
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Shin J, Yoo H. Photogating Effect-Driven Photodetectors and Their Emerging Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:882. [PMID: 36903759 PMCID: PMC10005329 DOI: 10.3390/nano13050882] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Revised: 02/15/2023] [Accepted: 02/24/2023] [Indexed: 06/18/2023]
Abstract
Rather than generating a photocurrent through photo-excited carriers by the photoelectric effect, the photogating effect enables us to detect sub-bandgap rays. The photogating effect is caused by trapped photo-induced charges that modulate the potential energy of the semiconductor/dielectric interface, where these trapped charges contribute an additional electrical gating-field, resulting in a shift in the threshold voltage. This approach clearly separates the drain current in dark versus bright exposures. In this review, we discuss the photogating effect-driven photodetectors with respect to emerging optoelectrical materials, device structures, and mechanisms. Representative examples that reported the photogating effect-based sub-bandgap photodetection are revisited. Furthermore, emerging applications using these photogating effects are highlighted. The potential and challenging aspects of next-generation photodetector devices are presented with an emphasis on the photogating effect.
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18
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Lee M, Seung H, Kwon JI, Choi MK, Kim DH, Choi C. Nanomaterial-Based Synaptic Optoelectronic Devices for In-Sensor Preprocessing of Image Data. ACS OMEGA 2023; 8:5209-5224. [PMID: 36816688 PMCID: PMC9933102 DOI: 10.1021/acsomega.3c00440] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/21/2023] [Accepted: 01/27/2023] [Indexed: 06/18/2023]
Abstract
With the advance in information technologies involving machine vision applications, the demand for energy- and time-efficient acquisition, transfer, and processing of a large amount of image data has rapidly increased. However, current architectures of the machine vision system have inherent limitations in terms of power consumption and data latency owing to the physical isolation of image sensors and processors. Meanwhile, synaptic optoelectronic devices that exhibit photoresponse similar to the behaviors of the human synapse enable in-sensor preprocessing, which makes the front-end part of the image recognition process more efficient. Herein, we review recent progress in the development of synaptic optoelectronic devices using functional nanomaterials and their unique interfacial characteristics. First, we provide an overview of representative functional nanomaterials and device configurations for the synaptic optoelectronic devices. Then, we discuss the underlying physics of each nanomaterial in the synaptic optoelectronic device and explain related device characteristics that allow for the in-sensor preprocessing. We also discuss advantages achieved by the application of the synaptic optoelectronic devices to image preprocessing, such as contrast enhancement and image filtering. Finally, we conclude this review and present a short prospect.
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Affiliation(s)
- Minkyung Lee
- Center
for Optoelectronic Materials and Devices, Post-silicon Semiconductor
Institute, Korea Institute of Science and
Technology (KIST), Seoul 02792, Republic of Korea
| | - Hyojin Seung
- Center
for Nanoparticle Research, Institute for
Basic Science (IBS), Seoul 08826, Republic of Korea
- School
of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic
of Korea
| | - Jong Ik Kwon
- School
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Moon Kee Choi
- Center
for Nanoparticle Research, Institute for
Basic Science (IBS), Seoul 08826, Republic of Korea
- School
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Dae-Hyeong Kim
- Center
for Nanoparticle Research, Institute for
Basic Science (IBS), Seoul 08826, Republic of Korea
- School
of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic
of Korea
- Department
of Materials Science and Engineering, Seoul
National University, Seoul 08826, Republic of Korea
| | - Changsoon Choi
- Center
for Optoelectronic Materials and Devices, Post-silicon Semiconductor
Institute, Korea Institute of Science and
Technology (KIST), Seoul 02792, Republic of Korea
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19
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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20
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Mia AK, Meyyappan M, Giri PK. Two-Dimensional Transition Metal Dichalcogenide Based Biosensors: From Fundamentals to Healthcare Applications. BIOSENSORS 2023; 13:bios13020169. [PMID: 36831935 PMCID: PMC9953520 DOI: 10.3390/bios13020169] [Citation(s) in RCA: 15] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2022] [Revised: 01/16/2023] [Accepted: 01/20/2023] [Indexed: 06/13/2023]
Abstract
There has been an exponential surge in reports on two-dimensional (2D) materials ever since the discovery of graphene in 2004. Transition metal dichalcogenides (TMDs) are a class of 2D materials where weak van der Waals force binds individual covalently bonded X-M-X layers (where M is the transition metal and X is the chalcogen), making layer-controlled synthesis possible. These individual building blocks (single-layer TMDs) transition from indirect to direct band gaps and have fascinating optical and electronic properties. Layer-dependent opto-electrical properties, along with the existence of finite band gaps, make single-layer TMDs superior to the well-known graphene that paves the way for their applications in many areas. Ultra-fast response, high on/off ratio, planar structure, low operational voltage, wafer scale synthesis capabilities, high surface-to-volume ratio, and compatibility with standard fabrication processes makes TMDs ideal candidates to replace conventional semiconductors, such as silicon, etc., in the new-age electrical, electronic, and opto-electronic devices. Besides, TMDs can be potentially utilized in single molecular sensing for early detection of different biomarkers, gas sensors, photodetector, and catalytic applications. The impact of COVID-19 has given rise to an upsurge in demand for biosensors with real-time detection capabilities. TMDs as active or supporting biosensing elements exhibit potential for real-time detection of single biomarkers and, hence, show promise in the development of point-of-care healthcare devices. In this review, we provide a historical survey of 2D TMD-based biosensors for the detection of bio analytes ranging from bacteria, viruses, and whole cells to molecular biomarkers via optical, electronic, and electrochemical sensing mechanisms. Current approaches and the latest developments in the study of healthcare devices using 2D TMDs are discussed. Additionally, this review presents an overview of the challenges in the area and discusses the future perspective of 2D TMDs in the field of biosensing for healthcare devices.
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Affiliation(s)
- Abdul Kaium Mia
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, India
| | - M. Meyyappan
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, India
| | - P. K. Giri
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, India
- Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039, India
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21
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Zhang Y, Wang L, Lei Y, Wang B, Lu Y, Yao Y, Zhang N, Lin D, Jiang Z, Guo H, Zhang J, Hu H. Self-Powered Bidirectional Photoresponse in High-Detectivity WSe 2 Phototransistor with Asymmetrical van der Waals Stacking for Retinal Neurons Emulation. ACS NANO 2022; 16:20937-20945. [PMID: 36413009 DOI: 10.1021/acsnano.2c08542] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
An artificial retina system shows a promising potential to achieve fast response, low power consumption, and high integration density for vision sensing systems. Optoelectronic sensors, which can emulate the neurobiological functionalities of retinal neurons, are crucial in the artificial retina systems. Here, we propose a WSe2 phototransistor with asymmetrical van der Waals (vdWs) stacking that can be used as an optoelectronic sensor in artificial retina systems. Through the utilization of the gate-tunable self-powered bidirectional photoresponse of this phototransistor, the neurobiological functionalities of both bipolar cells and cone cells, as well as the hierarchical connectivity between these two types of retinal neurons, are successfully mimicked by a single device. This self-powered bidirectional photoresponse is attributed to the asymmetrical vdWs stacking structure, which enables the transition from an n-p to p+-p homojunction in the WSe2 channel under different polarities of gate bias. Moreover, the detectivity and ON/OFF ratio of this phototransistor reach as high as 1.8 × 1013 Jones and 5.3 × 104, respectively, and a rise/fall time <80 μs is achieved, as well, which reveals good photodetection performance. The proof of this device provides a pathway for the future development of neuromorphic vision devices and systems.
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Affiliation(s)
- Yichi Zhang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Liming Wang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Yuanying Lei
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Bo Wang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Yao Lu
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Youyuan Yao
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Ningning Zhang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Dongdong Lin
- Qian Xuesen Collaborative Research Center of Astrochemistry and Space Life Sciences, Department of Microelectronic Science and Engineering, Ningbo University, Ningbo315211, China
| | - Zuimin Jiang
- Department of Physics, Fudan University, Shanghai200433, China
| | - Hui Guo
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Jincheng Zhang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Huiyong Hu
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
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22
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Sahu TK, Motlag M, Bandyopadhyay A, Kumar N, Cheng GJ, Kumar P. 2+δ-Dimensional Materials via Atomistic Z-Welding. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2202695. [PMID: 36089664 PMCID: PMC9661819 DOI: 10.1002/advs.202202695] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/08/2022] [Revised: 07/27/2022] [Indexed: 06/15/2023]
Abstract
Pivotal to functional van der Waals stacked flexible electronic/excitonic/spintronic/thermoelectric chips is the synergy amongst constituent layers. However; the current techniques viz. sequential chemical vapor deposition, micromechanical/wet-chemical transfer are mostly limited due to diffused interfaces, and metallic remnants/bubbles at the interface. Inter-layer-coupled 2+δ-dimensional materials, as a new class of materials can be significantly suitable for out-of-plane carrier transport and hence prompt response in prospective devices. Here, the discovery of the use of exotic electric field ≈106 V cm- 1 (at microwave hot-spot) and 2 thermomechanical conditions i.e. pressure ≈1 MPa, T ≈ 200 °C (during solvothermal reaction) to realize 2+δ-dimensional materials is reported. It is found that Pz Pz chemical bonds form between the component layers, e.g., CB and CN in G-BN, MoN and MoB in MoS2 -BN hybrid systems as revealed by X-ray photoelectron spectroscopy. New vibrational peaks in Raman spectra (BC ≈1320 cm-1 for the G-BN system and MoB ≈365 cm-1 for the MoS2 -BN system) are recorded. Tunable mid-gap formation, along with diodic behavior (knee voltage ≈0.7 V, breakdown voltage ≈1.8 V) in the reduced graphene oxide-reduced BN oxide (RGO-RBNO) hybrid system is also observed. Band-gap tuning in MoS2 -BN system is observed. Simulations reveal stacking-dependent interfacial charge/potential drops, hinting at the feasibility of next-generation functional devices/sensors.
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Affiliation(s)
- Tumesh Kumar Sahu
- Department of PhysicsIndian Institute of Technology PatnaBihta CampusBihtaPatnaBihar801106India
- Department of PhysicsShri Ramdeo Baba College of Engineering and ManagementNagpurMaharashtra440013India
| | - Maithilee Motlag
- School of Industrial EngineeringPurdue UniversityWest LafayetteIN47907USA
| | | | - Nishant Kumar
- Department of PhysicsIndian Institute of Technology PatnaBihta CampusBihtaPatnaBihar801106India
| | - Gary J. Cheng
- School of Industrial EngineeringPurdue UniversityWest LafayetteIN47907USA
- Institute of Technological SciencesWuhan UniversityWuhan, Hubei430074China
- Birck Nanotechnology CentrePurdue UniversityWest LafayetteIN47907USA
| | - Prashant Kumar
- Department of PhysicsIndian Institute of Technology PatnaBihta CampusBihtaPatnaBihar801106India
- Birck Nanotechnology CentrePurdue UniversityWest LafayetteIN47907USA
- Global Innovation Centre for Advanced NanomaterialsThe University of NewcastleNewcastle2308Australia
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23
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Islam MM, Krishnaprasad A, Dev D, Martinez-Martinez R, Okonkwo V, Wu B, Han SS, Bae TS, Chung HS, Touma J, Jung Y, Roy T. Multiwavelength Optoelectronic Synapse with 2D Materials for Mixed-Color Pattern Recognition. ACS NANO 2022; 16:10188-10198. [PMID: 35612988 DOI: 10.1021/acsnano.2c01035] [Citation(s) in RCA: 25] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Neuromorphic visual systems emulating biological retina functionalities have enormous potential for in-sensor computing, with prospects of making artificial intelligence ubiquitous. Conventionally, visual information is captured by an image sensor, stored by memory units, and eventually processed by the machine learning algorithm. Here, we present an optoelectronic synapse device with multifunctional integration of all the processes required for real time object identification. Ultraviolet-visible wavelength-sensitive MoS2 FET channel with infrared sensitive PtTe2/Si gate electrode enables the device to sense, store, and process optical data for a wide range of the electromagnetic spectrum, while maintaining a low dark current. The device exhibits optical stimulation-controlled short-term and long-term potentiation, electrically driven long-term depression, synaptic weight update for multiple wavelengths of light ranging from 300 nm in ultraviolet to 2 μm in infrared. An artificial neural network developed using the extracted weight update parameters of the device can be trained to identify both single wavelength and mixed wavelength patterns. This work demonstrates a device that could potentially be used for realizing a multiwavelength neuromorphic visual system for pattern recognition and object identification.
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Affiliation(s)
- Molla Manjurul Islam
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Physics, University of Central Florida, Orlando, Florida 32816, United States
| | - Adithi Krishnaprasad
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
| | - Durjoy Dev
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
| | - Ricardo Martinez-Martinez
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
| | - Victor Okonkwo
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Benjamin Wu
- Department of Applied Mathematics and Statistics, Stony Brook University, Stony Brook, New York 11794, United States
| | - Sang Sub Han
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Tae-Sung Bae
- Analytical Research Division, Korea Basic Science Institute, Jeonju 54907, South Korea
| | - Hee-Suk Chung
- Analytical Research Division, Korea Basic Science Institute, Jeonju 54907, South Korea
| | - Jimmy Touma
- Air Force Research Lab, Eglin Air Force Base, Florida 32542, United States
| | - Yeonwoong Jung
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
- Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32816, United States
| | - Tania Roy
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Physics, University of Central Florida, Orlando, Florida 32816, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
- Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32816, United States
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24
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Shen J, Cheng Z, Zhou P. Optical and optoelectronic neuromorphic devices based on emerging memory technologies. NANOTECHNOLOGY 2022; 33:372001. [PMID: 35605580 DOI: 10.1088/1361-6528/ac723f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2022] [Accepted: 05/23/2022] [Indexed: 06/15/2023]
Abstract
As artificial intelligence continues its rapid development, inevitable challenges arise for the mainstream computing hardware to process voluminous data (Big data). The conventional computer system based on von Neumann architecture with separated processor unit and memory is approaching the limit of computational speed and energy efficiency. Thus, novel computing architectures such as in-memory computing and neuromorphic computing based on emerging memory technologies have been proposed. In recent years, light is incorporated into computational devices, beyond the data transmission in traditional optical communications, due to its innate superiority in speed, bandwidth, energy efficiency, etc. Thereinto, photo-assisted and photoelectrical synapses are developed for neuromorphic computing. Additionally, both the storage and readout processes can be implemented in optical domain in some emerging photonic devices to leverage unique properties of photonics. In this review, we introduce typical photonic neuromorphic devices rooted from emerging memory technologies together with corresponding operational mechanisms. In the end, the advantages and limitations of these devices originated from different modulation means are listed and discussed.
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Affiliation(s)
- Jiabin Shen
- State Key Laboratory of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, People's Republic of China
| | - Zengguang Cheng
- State Key Laboratory of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, People's Republic of China
| | - Peng Zhou
- State Key Laboratory of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, People's Republic of China
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25
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Tang Z, Fan X, Chen Y, Gu P. Ocular Nanomedicine. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2003699. [PMID: 35150092 PMCID: PMC9130902 DOI: 10.1002/advs.202003699] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2020] [Revised: 10/31/2021] [Indexed: 05/07/2023]
Abstract
Intrinsic shortcomings associated with conventional therapeutic strategies often compromise treatment efficacy in clinical ophthalmology, prompting the rapid development of versatile alternatives for satisfactory diagnostics and therapeutics. Given advances in material science, nanochemistry, and nanobiotechnology, a broad spectrum of functional nanosystems has been explored to satisfy the extensive requirements of ophthalmologic applications. In the present review, the recent progress in nanosystems, both conventional and emerging nanomaterials in ophthalmology from state-of-the-art studies, are comprehensively examined and the role of their fundamental physicochemical properties in bioavailability, tissue penetration, biodistribution, and elimination after interacting with the ophthalmologic microenvironment emphasized. Furthermore, along with the development of surface engineering of nanomaterials, emerging theranostic methodologies are promoted as potential alternatives for multipurpose ocular applications, such as emerging biomimetic ophthalmology (e.g., smart electrochemical eye), thus provoking a holistic review of "ocular nanomedicine." By affording insight into challenges encountered by ocular nanomedicine and further highlighting the direction of future studies, this review provides an incentive for enriching ocular nanomedicine-based fundamental research and future clinical translation.
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Affiliation(s)
- Zhimin Tang
- Department of OphthalmologyShanghai Ninth People's HospitalShanghai Jiao Tong University School of MedicineShanghai Key Laboratory of Orbital Diseases and Ocular OncologyShanghai200011P. R. China
| | - Xianqun Fan
- Department of OphthalmologyShanghai Ninth People's HospitalShanghai Jiao Tong University School of MedicineShanghai Key Laboratory of Orbital Diseases and Ocular OncologyShanghai200011P. R. China
| | - Yu Chen
- Materdicine LabSchool of Life SciencesShanghai UniversityShanghai200444P. R. China
| | - Ping Gu
- Department of OphthalmologyShanghai Ninth People's HospitalShanghai Jiao Tong University School of MedicineShanghai Key Laboratory of Orbital Diseases and Ocular OncologyShanghai200011P. R. China
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26
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Sun Y, Hu R, An C, Ma X, Zhang J, Liu J. Visible to near-infrared photodetector based on SnSe 2/WSe 2heterojunction with potential application in artificial visual neuron. NANOTECHNOLOGY 2021; 32:475206. [PMID: 34375957 DOI: 10.1088/1361-6528/ac1c26] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2021] [Accepted: 08/09/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2d) transition-metal dichalcogenides (TMDCs) are promising candidate materials for developing next generation nano optoelectronic devices, due to their strong interaction with light. In addition, the free of surface dangling bonds makes it possible to stacking any different types of 2D TMDCs together to form heterojunctions with desirable band structures for various applications. However, most of the 2D TMDCs are bipolar or strong unipolar n-type doped, while very few of them show weak p-type doping, which severely affects the performance of the formed heterojunctions. In this work, we fabricated a SnSe2/WSe2heterojunction of type II band alignment with a small bandgap of ∼0.1 eV, which is ideally for developing optoelectronic devices responsible to a broad light spectrum. N2O plasma treatment is applied to enhance the p-type doping of both WSe2and SnSe2, which results in the increased on-off ratio of n-type SnSe2by 50 times and the hole mobility of WSe2by 527 times. The WSe2/SnSe2heterostructure also achieves a decent performance as a p-n junction, which exhibits photo responsivity of 450 mA W-1and 133 mA W-1for 700 nm visible light and 1600 nm infrared light, respectively, without any gate or source-drain bias, showing great photovoltaic effect. Moreover, the heterojunction shows great promise as an artificial visual neuron, which can differentiate the dark, visible and infrared light illumination conditions by applying a series of electrical pulses through the back-gate electrode.
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Affiliation(s)
- Yang Sun
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Ruixue Hu
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Chunhua An
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Xinli Ma
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Jing Zhang
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Jing Liu
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
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27
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Mu B, Guo L, Liao J, Xie P, Ding G, Lv Z, Zhou Y, Han ST, Yan Y. Near-Infrared Artificial Synapses for Artificial Sensory Neuron System. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2103837. [PMID: 34418276 DOI: 10.1002/smll.202103837] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2021] [Revised: 08/10/2021] [Indexed: 06/13/2023]
Abstract
The computing based on artificial neuron network is expected to break through the von Neumann bottleneck of traditional computer, and to greatly improve the computing efficiency, displaying a broad prospect in the application of artificial visual system. In the specific structural layout, it is a common method to connect the discrete photodetector with the artificial neuron in series, which enhances the complexity of signal recognition, conversion and storage. In this work, organic small molecule IR-780 iodide is inserted into the memory device as both the charge trapping layer and near-infrared (NIR) photoresponsive film. Through electrical and optical regulation, artificial synaptic functions including short-term plasticity, long-term plasticity, and spike rate dependence are realized. In the established artificial sensory neuron system, NIR optical pulses can significantly improve the spiking rate. Moreover, the spiking neural networks are further constructed by simulation for handwritten digit classification. This research may contribute to the development of light driven neural robots, optical signal encryption, and neural computing.
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Affiliation(s)
- Boyuan Mu
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
- School of Intelligent Construction, Wuchang University of Technology, Wuhan, 430000, P. R. China
| | - Liangchao Guo
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Junhong Liao
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Peng Xie
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ziyu Lv
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yan Yan
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
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28
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Yin L, Cheng R, Wen Y, Liu C, He J. Emerging 2D Memory Devices for In-Memory Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2007081. [PMID: 34105195 DOI: 10.1002/adma.202007081] [Citation(s) in RCA: 42] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2020] [Revised: 12/27/2020] [Indexed: 06/12/2023]
Abstract
It is predicted that the conventional von Neumann computing architecture cannot meet the demands of future data-intensive computing applications due to the bottleneck between the processing and memory units. To try to solve this problem, in-memory computing technology, where calculations are carried out in situ within each nonvolatile memory unit, has been intensively studied. Among various candidate materials, 2D layered materials have recently demonstrated many new features that have been uniquely exploited to build next-generation electronics. Here, the recent progress of 2D memory devices is reviewed for in-memory computing. For each memory configuration, their operation mechanisms and memory characteristics are described, and their pros and cons are weighed. Subsequently, their versatile applications for in-memory computing technology, including logic operations, electronic synapses, and random number generation are presented. Finally, the current challenges and potential strategies for future 2D in-memory computing systems are also discussed at the material, device, circuit, and architecture levels. It is hoped that this manuscript could give a comprehensive review of 2D memory devices and their applications in in-memory computing, and be helpful for this exciting research area.
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Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
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29
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Jin DG, Kim SH, Kim SG, Park J, Park E, Yu HY. Enhancement of Synaptic Characteristics Achieved by the Optimization of Proton-Electron Coupling Effect in a Solid-State Electrolyte-Gated Transistor. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100242. [PMID: 34114332 DOI: 10.1002/smll.202100242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2021] [Revised: 04/09/2021] [Indexed: 06/12/2023]
Abstract
Presently, the 3-terminal artificial synapse device has been in focus for neuromorphic computing systems owing to its excellent weight controllability. Here, an artificial synapse device based on the 3-terminal solid-state electrolyte-gated transistor is proposed to achieve outstanding synaptic characteristics with a human-like mechanism at low power. Novel synaptic characteristics are accomplished by precisely tuning the threshold voltage using the proton-electron coupling effect, which is caused by proton migration inside the electrolyte. However, these synaptic characteristics are degraded because traps at the interface of channel/electrolyte disturb the proton-electron coupling effect. To minimize degradation, the oxygen plasma treatment is performed to reduce interface traps. As a result, symmetric weight updates and outstanding synaptic characteristics are achieved. Furthermore, high repeatability and long-term plasticity are observed at low operating power, which is essential for artificial synapses. Therefore, this study shows the progress of artificial synapses and proposes a promising method, a low-power neuromorphic system, to achieve high accuracy.
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Affiliation(s)
- Dong-Gyu Jin
- School of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, Korea
| | - Seung-Hwan Kim
- School of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, Korea
| | - Seung-Geun Kim
- Department of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, Korea
| | - June Park
- Department of Nano Semiconductor Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, Korea
| | - Euyjin Park
- School of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, Korea
| | - Hyun-Yong Yu
- School of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, Korea
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30
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Rao T, Wang H, Zeng Y, Guo Z, Zhang H, Liao W. Phase Transitions and Water Splitting Applications of 2D Transition Metal Dichalcogenides and Metal Phosphorous Trichalcogenides. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2002284. [PMID: 34026429 PMCID: PMC8132069 DOI: 10.1002/advs.202002284] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2020] [Revised: 01/24/2021] [Indexed: 06/02/2023]
Abstract
2D layered materials turn out to be the most attractive hotspot in materials for their unique physical and chemical properties. A special class of 2D layered material refers to materials exhibiting phase transition based on environment variables. Among these materials, transition metal dichalcogenides (TMDs) act as a promising alternative for their unique combination of atomic-scale thickness, direct bandgap, significant spin-orbit coupling and prominent electronic and mechanical properties, enabling them to be applied for fundamental studies as catalyst materials. Metal phosphorous trichalcogenides (MPTs), as another potential catalytic 2D phase transition material, have been employed for their unusual intercalation behavior and electrochemical properties, which act as a secondary electrode in lithium batteries. The preparation of 2D TMD and MPT materials has been extensively conducted by engineering their intrinsic structures at the atomic scale. In this study, advanced synthesis methods of preparing 2D TMD and MPT materials are tested, and their properties are investigated, with stress placed on their phase transition. The surge of this type of report is associated with water-splitting catalysis and other catalytic purposes. This study aims to be a guideline to explore the mentioned 2D TMD and MPT materials for their catalytic applications.
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Affiliation(s)
- Tingke Rao
- College of Electronic and Information EngineeringInstitute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060P. R. China
| | - Huide Wang
- Institute of Microscale OptoelectronicsCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Yu‐Jia Zeng
- Institute of Microscale OptoelectronicsCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Zhinan Guo
- Institute of Microscale OptoelectronicsCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Han Zhang
- Institute of Microscale OptoelectronicsCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Wugang Liao
- College of Electronic and Information EngineeringInstitute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060P. R. China
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Geum DM, Kim S, Khym J, Lim J, Kim S, Ahn SY, Kim TS, Kang K, Kim S. Arrayed MoS 2 -In 0.53 Ga 0.47 As van der Waals Heterostructure for High-Speed and Broadband Detection from Visible to Shortwave-Infrared Light. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2007357. [PMID: 33733586 DOI: 10.1002/smll.202007357] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2020] [Revised: 02/04/2021] [Indexed: 06/12/2023]
Abstract
A high-speed and broadband 5 × 5 photodetector array based on MoS2 /In0.53 Ga0.47 As heterojunction is successfully demonstrated to take full advantage of the type-II band-aligned multilayer MoS2 /In0.53 Ga0.47 As. The fabricated devices exhibit good uniformity in the Raman spectrum and clear rectifying characteristics. The fabricated MoS2 /In0.53 Ga0.47 As photodetectors show good optical performances at a broad wavelength range showing high responsivities corresponding to the detectivity of ≈1010 Jones at -3 V for the incident broadband light from 400 to 1550 nm. A very fast photoresponse is also obtained with a small rise/fall time in the order of microseconds both for visible (638 nm) and shortwave infrared (1310 nm). Finally, the image scanning properties of MoS2 /In0.53 Ga0.47 As devices are demonstrated for visible and infrared light, indicating that the suggested device is one of the promising options for future broadband imager, which can be integrated on the focal plane arrays (FPAs).
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Affiliation(s)
- Dae-Myeong Geum
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Daejeon, 34141, Republic of Korea
| | - Suhyun Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Daejeon, 34141, Republic of Korea
| | - JiHoon Khym
- Quantum Functional Semiconductor Research Center, Dongguk University, Joong-gu, Seoul, 04620, Republic of Korea
| | - Jinha Lim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Daejeon, 34141, Republic of Korea
| | - SeongKwang Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Daejeon, 34141, Republic of Korea
| | - Seung-Yeop Ahn
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Daejeon, 34141, Republic of Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Daejeon, 34141, Republic of Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Daejeon, 34141, Republic of Korea
| | - SangHyeon Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Daejeon, 34141, Republic of Korea
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32
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Jawa H, Varghese A, Lodha S. Electrically Tunable Room Temperature Hysteresis Crossover in Underlap MoS 2 Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:9186-9194. [PMID: 33555851 DOI: 10.1021/acsami.0c21530] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Clockwise to anticlockwise hysteresis crossover in current-voltage transfer characteristics of field-effect transistors (FETs) with graphene and MoS2 channels holds significant promise for nonvolatile memory applications. However, such crossovers have been shown to manifest only at high temperature. In this work, for the first time, we demonstrate room temperature hysteresis crossover in few-layer MoS2 FETs using a gate-drain underlap design to induce a differential response from traps near the MoS2-HfO2 channel-gate dielectric interface, also referred to as border traps, to applied gate bias. The appearance of trap-driven anticlockwise hysteresis at high gate voltages in underlap FETs can be unambiguously attributed to the presence of an underlap since transistors with and without the underlap region were fabricated on the same MoS2 channel flake. The underlap design also enables room temperature tuning of the anticlockwise hysteresis window (by 140×) as well as the crossover gate voltage (by 2.6×) with applied drain bias and underlap length. Comprehensive measurements of the transfer curves in ambient and vacuum conditions at varying sweep rates and temperatures (RT, 45 °C, and 65 °C) help segregate the quantitative contributions of adsorbates, interface traps, and bulk HfO2 traps to the clockwise and anticlockwise hysteresis.
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Affiliation(s)
- Himani Jawa
- Department of Electrical Engineering, IIT Bombay, Mumbai, Maharashtra 400076, India
| | - Abin Varghese
- Department of Electrical Engineering, IIT Bombay, Mumbai, Maharashtra 400076, India
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
| | - Saurabh Lodha
- Department of Electrical Engineering, IIT Bombay, Mumbai, Maharashtra 400076, India
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Das S, Wang Y, Dai Y, Li S, Sun Z. Ultrafast transient sub-bandgap absorption of monolayer MoS 2. LIGHT, SCIENCE & APPLICATIONS 2021; 10:27. [PMID: 33514690 PMCID: PMC7846580 DOI: 10.1038/s41377-021-00462-4] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2020] [Revised: 12/21/2020] [Accepted: 12/30/2020] [Indexed: 05/23/2023]
Abstract
The light-matter interaction in materials is of remarkable interest for various photonic and optoelectronic applications, which is intrinsically determined by the bandgap of the materials involved. To extend the applications beyond the bandgap limit, it is of great significance to study the light-matter interaction below the material bandgap. Here, we report the ultrafast transient absorption of monolayer molybdenum disulfide in its sub-bandgap region from ~0.86 µm to 1.4 µm. Even though this spectral range is below the bandgap, we observe a significant absorbance enhancement up to ~4.2% in the monolayer molybdenum disulfide (comparable to its absorption within the bandgap region) due to pump-induced absorption by the excited carrier states. The different rise times of the transient absorption at different wavelengths indicate the various contributions of the different carrier states (i.e., real carrier states in the short-wavelength region of ~<1 µm, and exciton states in the long wavelength region of ~>1 µm). Our results elucidate the fundamental understanding regarding the optical properties, excited carrier states, and carrier dynamics in the technologically important near-infrared region, which potentially leads to various photonic and optoelectronic applications (e.g., excited-state-based photodetectors and modulators) of two-dimensional materials and their heterostructures beyond their intrinsic bandgap limitations.
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Affiliation(s)
- Susobhan Das
- Department of Electronics and Nanoengineering, Aalto University, 02150, Espoo, Finland.
| | - Yadong Wang
- Department of Electronics and Nanoengineering, Aalto University, 02150, Espoo, Finland
| | - Yunyun Dai
- Department of Electronics and Nanoengineering, Aalto University, 02150, Espoo, Finland
| | - Shisheng Li
- International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba, Japan
| | - Zhipei Sun
- Department of Electronics and Nanoengineering, Aalto University, 02150, Espoo, Finland.
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo, Finland.
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Meng X, Fan C, An X, Yuan S, Jing Y, Liu Z, Sun C, Zhang Y, Zhang Z, Wang M, Zheng H, Li E. Aluminum doping effects on photoresponse characteristics of hydrothermal tin disulfide nanosheets. CrystEngComm 2021. [DOI: 10.1039/d1ce00588j] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Photoresponse characteristics of Al-doped SnS2 nanosheets have been improved significantly by aluminum doping, compared to pristine SnS2. The response time was reduced by two orders of magnitude and the responsivity was increased one hundredfold.
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Song C, Noh G, Kim TS, Kang M, Song H, Ham A, Jo MK, Cho S, Chai HJ, Cho SR, Cho K, Park J, Song S, Song I, Bang S, Kwak JY, Kang K. Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics. ACS NANO 2020; 14:16266-16300. [PMID: 33301290 DOI: 10.1021/acsnano.0c06607] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host-intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.
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Affiliation(s)
- Chanwoo Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Gichang Noh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Minsoo Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hwayoung Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Ayoung Ham
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Min-Kyung Jo
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Seorin Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hyun-Jun Chai
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seong Rae Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Kiwon Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Jeongwon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seungwoo Song
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Intek Song
- Department of Applied Chemistry, Andong National University, Andong 36728, Korea
| | - Sunghwan Bang
- Materials & Production Engineering Research Institute, LG Electronics, Pyeongtaek-si 17709, Korea
| | - Joon Young Kwak
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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36
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Islam MM, Dev D, Krishnaprasad A, Tetard L, Roy T. Optoelectronic synapse using monolayer MoS 2 field effect transistors. Sci Rep 2020; 10:21870. [PMID: 33318616 PMCID: PMC7736870 DOI: 10.1038/s41598-020-78767-4] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/15/2020] [Accepted: 11/25/2020] [Indexed: 12/05/2022] Open
Abstract
Optical data sensing, processing and visual memory are fundamental requirements for artificial intelligence and robotics with autonomous navigation. Traditionally, imaging has been kept separate from the pattern recognition circuitry. Optoelectronic synapses hold the special potential of integrating these two fields into a single layer, where a single device can record optical data, convert it into a conductance state and store it for learning and pattern recognition, similar to the optic nerve in human eye. In this work, the trapping and de-trapping of photogenerated carriers in the MoS2/SiO2 interface of a n-channel MoS2 transistor was employed to emulate the optoelectronic synapse characteristics. The monolayer MoS2 field effect transistor (FET) exhibits photo-induced short-term and long-term potentiation, electrically driven long-term depression, paired pulse facilitation (PPF), spike time dependent plasticity, which are necessary synaptic characteristics. Moreover, the device’s ability to retain its conductance state can be modulated by the gate voltage, making the device behave as a photodetector for positive gate voltages and an optoelectronic synapse at negative gate voltages.
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Affiliation(s)
- Molla Manjurul Islam
- NanoScience Technology Center, University of Central Florida, Orlando, FL, 32826, USA.,Department of Physics, University of Central Florida, Orlando, FL, 32816, USA
| | - Durjoy Dev
- NanoScience Technology Center, University of Central Florida, Orlando, FL, 32826, USA.,Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL, 32816, USA
| | - Adithi Krishnaprasad
- NanoScience Technology Center, University of Central Florida, Orlando, FL, 32826, USA.,Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL, 32816, USA
| | - Laurene Tetard
- NanoScience Technology Center, University of Central Florida, Orlando, FL, 32826, USA.,Department of Physics, University of Central Florida, Orlando, FL, 32816, USA
| | - Tania Roy
- NanoScience Technology Center, University of Central Florida, Orlando, FL, 32826, USA. .,Department of Physics, University of Central Florida, Orlando, FL, 32816, USA. .,Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL, 32816, USA. .,Department of Materials Science and Engineering, University of Central Florida, Orlando, FL, 32816, USA.
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Han JK, Geum DM, Lee MW, Yu JM, Kim SK, Kim S, Choi YK. Bioinspired Photoresponsive Single Transistor Neuron for a Neuromorphic Visual System. NANO LETTERS 2020; 20:8781-8788. [PMID: 33238098 DOI: 10.1021/acs.nanolett.0c03652] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Realizing a neuromorphic-based artificial visual system with low-cost hardware requires a neuromorphic device that can react to light stimuli. This study introduces a photoresponsive neuron device composed of a single transistor, developed by engineering an artificial neuron that responds to light, just like retinal neurons. Neuron firing is activated primarily by electrical stimuli such as current via a well-known single transistor latch phenomenon. Its firing characteristics, represented by spiking frequency and amplitude, are additionally modulated by optical stimuli such as photons. When light is illuminated onto the neuron transistor, electron-hole pairs are generated, and they allow the neuron transistor to fire at lower firing threshold voltage. Different photoresponsive properties can be modulated by the intensity and wavelength of the light, analogous to the behavior of retinal neurons. The artificial visual system can be miniaturized because a photoresponsive neuronal function is realized without bulky components such as image sensors and extra circuits.
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Affiliation(s)
- Joon-Kyu Han
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Dae-Myeong Geum
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Mun-Woo Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Ji-Man Yu
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Seong Kwang Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sanghyeon Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Yang-Kyu Choi
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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Jeon H, Kim SG, Park J, Kim SH, Park E, Kim J, Yu HY. Hysteresis Modulation on Van der Waals-Based Ferroelectric Field-Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2004371. [PMID: 33205614 DOI: 10.1002/smll.202004371] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2020] [Revised: 10/24/2020] [Indexed: 06/11/2023]
Abstract
2D semiconductor-based ferroelectric field effect transistors (FeFETs) have been considered as a promising artificial synaptic device for implementation of neuromorphic computing systems. However, an inevitable problem, interface traps at the 2D semiconductor/ferroelectric oxide interface, suppresses ferroelectric characteristics, and causes a critical degradation on the performance of 2D-based FeFETs. Here, hysteresis modulation method using self-assembly monolayer (SAM) material for interface trap passivation on 2D-based FeFET is presented. Through effectively passivation of interface traps by SAM layer, the hysteresis of the proposed device changes from interface traps-dependent to polarization-dependent direction. The reduction of interface trap density is clearly confirmed through the result of calculation using the subthreshold swing of the device. Furthermore, excellent optic-neural synaptic characteristics are successfully implemeted, including linear and symmetric potentiation and depression, and multilevel conductance. This work identifies the potential of passivation effect for 2D-based FeFETs to accelerate the development of neuromorphic computing systems.
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Affiliation(s)
- Hyeok Jeon
- Department of Semiconductor Systems Engineering, Korea University, Seoul, 02841, South Korea
| | - Seung-Geun Kim
- Department of Semiconductor Systems Engineering, Korea University, Seoul, 02841, South Korea
| | - June Park
- Department of Nano Semiconductor Engineering, Korea University, Seoul, 02841, South Korea
| | - Seung-Hwan Kim
- Department of Electrical Engineering, Korea University, Seoul, 02841, South Korea
| | - Euyjin Park
- Department of Electrical Engineering, Korea University, Seoul, 02841, South Korea
| | - Jiyoung Kim
- Department of Material Sciences and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Hyun-Yong Yu
- Department of Semiconductor Systems Engineering, Korea University, Seoul, 02841, South Korea
- Department of Electrical Engineering, Korea University, Seoul, 02841, South Korea
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Abstract
Two-dimensional (2D) layered materials and their heterostructures have recently been recognized as promising building blocks for futuristic brain-like neuromorphic computing devices. They exhibit unique properties such as near-atomic thickness, dangling-bond-free surfaces, high mechanical robustness, and electrical/optical tunability. Such attributes unattainable with traditional electronic materials are particularly promising for high-performance artificial neurons and synapses, enabling energy-efficient operation, high integration density, and excellent scalability. In this review, diverse 2D materials explored for neuromorphic applications, including graphene, transition metal dichalcogenides, hexagonal boron nitride, and black phosphorous, are comprehensively overviewed. Their promise for neuromorphic applications are fully discussed in terms of material property suitability and device operation principles. Furthermore, up-to-date demonstrations of neuromorphic devices based on 2D materials or their heterostructures are presented. Lastly, the challenges associated with the successful implementation of 2D materials into large-scale devices and their material quality control will be outlined along with the future prospect of these emergent materials.
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Nalwa HS. A review of molybdenum disulfide (MoS 2) based photodetectors: from ultra-broadband, self-powered to flexible devices. RSC Adv 2020; 10:30529-30602. [PMID: 35516069 PMCID: PMC9056353 DOI: 10.1039/d0ra03183f] [Citation(s) in RCA: 47] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2020] [Accepted: 07/17/2020] [Indexed: 12/23/2022] Open
Abstract
Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.
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Affiliation(s)
- Hari Singh Nalwa
- Advanced Technology Research 26650 The Old Road Valencia California 91381 USA
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41
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Shin GH, Park C, Lee KJ, Jin HJ, Choi SY. Ultrasensitive Phototransistor Based on WSe 2-MoS 2 van der Waals Heterojunction. NANO LETTERS 2020; 20:5741-5748. [PMID: 32589036 DOI: 10.1021/acs.nanolett.0c01460] [Citation(s) in RCA: 57] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Band engineering using the van der Waals heterostructure of two-dimensional materials allows for the realization of high-performance optoelectronic devices by providing an ultrathin and uniform PN junction with sharp band edges. In this study, a highly sensitive photodetector based on the van der Waals heterostructure of WSe2 and MoS2 was developed. The MoS2 was utilized as the channel for a phototransistor, whereas the WSe2-MoS2 PN junction in the out-of-plane orientation was utilized as a charge transfer layer. The vertical built-in electric field in the PN junction separated the photogenerated carriers, thus leading to a high photoconductive gain of 106. The proposed phototransistor exhibited an excellent performance, namely, a high photoresponsivity of 2700 A/W, specific detectivity of 5 × 1011 Jones, and response time of 17 ms. The proposed scheme in conjunction with the large-area synthesis technology of two-dimensional materials contributes significantly to practical photodetector applications.
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Affiliation(s)
- Gwang Hyuk Shin
- School of Electrical Engineering, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, KAIST, Daehakro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Cheolmin Park
- School of Electrical Engineering, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, KAIST, Daehakro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Khang June Lee
- School of Electrical Engineering, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, KAIST, Daehakro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hyeok Jun Jin
- School of Electrical Engineering, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, KAIST, Daehakro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sung-Yool Choi
- School of Electrical Engineering, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, KAIST, Daehakro, Yuseong-gu, Daejeon 34141, Republic of Korea
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Yin L, Huang W, Xiao R, Peng W, Zhu Y, Zhang Y, Pi X, Yang D. Optically Stimulated Synaptic Devices Based on the Hybrid Structure of Silicon Nanomembrane and Perovskite. NANO LETTERS 2020; 20:3378-3387. [PMID: 32212734 DOI: 10.1021/acs.nanolett.0c00298] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
Optoelectronic synaptic devices have been attracting increasing attention due to their critical role in the development of neuromorphic computing based on optoelectronic integration. Here we start with silicon nanomembrane (Si NM) to fabricate optoelectronic synaptic devices. Organolead halide perovskite (MAPbI3) is exploited to form a hybrid structure with Si NM. We demonstrate that synaptic transistors based on the hybrid structure are very sensitive to optical stimulation with low energy consumption. Synaptic functionalities such as excitatory post-synaptic current (EPSC), paired-pulse facilitation, and transition from short-term memory to long-term memory (LTM) are all successfully mimicked by using these optically stimulated synaptic transistors. The backgate-enabled tunability of the EPSC of these devices further leads to the LTM-based mimicking of visual learning and memory processes under different mood states. This work contributes to the development of Si-based optoelectronic synaptic devices for neuromorphic computing.
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Affiliation(s)
- Lei Yin
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Wen Huang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Rulei Xiao
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures and College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
| | - Wenbing Peng
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Yiyue Zhu
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Yiqiang Zhang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
- School of Materials Science and Engineering, Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, Henan 450001, China
| | - Xiaodong Pi
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Deren Yang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
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Zou Z, Li D, Liang J, Zhang X, Liu H, Zhu C, Yang X, Li L, Zheng B, Sun X, Zeng Z, Yi J, Zhuang X, Wang X, Pan A. Epitaxial synthesis of ultrathin β-In 2Se 3/MoS 2 heterostructures with high visible/near-infrared photoresponse. NANOSCALE 2020; 12:6480-6488. [PMID: 32154546 DOI: 10.1039/c9nr10387b] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
van der Waals (vdWs) heterostructures, combining different two-dimensional (2D) layered materials with diverse properties, have been demonstrated to be a very promising platform to explore a new physical phenomenon and realize various potential applications in atomically thin electronic and optoelectronic devices. Here, we report the controlled growth of vertically stacked β-In2Se3/MoS2 vdWs heterostructures (despite the existence of large lattice mismatching ∼29%) through a typical two-step chemical vapor deposition (CVD) method. The crystal structure of the achieved heterostructures is characterized by transmission electron microscopy, where evident Moiré patterns are observed, indicating well-aligned lattice orientation. Strong photoluminescence quenching is obeserved in the heterostructure, revealing effective interlayer charge transfer at the interface. Electrical devices are further constructed based on the achieved heterostructures, which have a high on/off ratio and a typical rectifying behavior. Upon laser irradiation, the devices show excellent photosensing properties. A high responsivity of 4.47 A W-1 and a detectivity of 1.07 × 109 Jones are obtained under 450 nm laser illumination with a bias voltage of 1 V, which are much better than those of heterostructures grown via CVD. Most significantly, the detection range can be extended to near-infrared due to the relatively small bandgap nature of β-In2Se3. With 830 nm laser illumination, the devices also show distinct photoresponses with fast response speed even when operating at room temperature. The high-quality β-In2Se3/MoS2 heterostructures broaden the family of the 2D layered heterostructure system and should have significant potential applications in high-performance broadband photodetectors.
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Affiliation(s)
- Zixing Zou
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Junwu Liang
- School Physics and Telecommunication Engineering, Yulin Normal University, Yulin, Guangxi 537000, P. R. China
| | - Xuehong Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Huawei Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Lihui Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Xingxia Sun
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Zhouxiaosong Zeng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Jiali Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Xiujuan Zhuang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
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