Charge Transport in Mixed Semiconducting Carbon Nanotube Networks with Tailored Mixing Ratios

Ion-Exchange Doping of Semiconducting Single-Walled Carbon Nanotubes

Semiconducting single-walled carbon nanotubes (SWCNTs) are a promising thermoelectric material with high power factors after chemical p- or n-doping. Understanding the impact of dopant counterions on charge transport and thermoelectric properties of nanotube networks is essential to further optimize doping methods and to develop better dopants. This work utilizes ion-exchange doping to systematically vary the size of counterions in thin films of small and large diameter, polymer-sorted semiconducting SWCNTs with AuCl3 as the initial p-dopant and investigates the impact of ion size on conductivity, Seebeck coefficients, and power factors. Larger anions are found to correlate with higher electrical conductivities and improved doping stability, while no significant effect on the power factors is found. Importantly, the effect of counterion size on the thermoelectric properties of dense SWCNT networks is not obscured by morphological changes upon doping. The observed trends of carrier mobilities and Seebeck coefficients can be explained by a random resistor model for the nanotube network that accounts for overlapping Coulomb potentials leading to the formation of an impurity band whose depth depends on the carrier density and counterion size. These insights can be applied more broadly to understand the thermoelectric properties of doped percolating disordered systems, including semiconducting polymers.

Measuring the Electronic Bandgap of Carbon Nanotube Networks in Non-Ideal p-n Diodes

The measurement of the electronic bandgap and exciton binding energy in quasi-one-dimensional materials such as carbon nanotubes is challenging due to many-body effects and strong electron-electron interactions. Unlike bulk semiconductors, where the electronic bandgap is well known, the optical resonance in low-dimensional semiconductors is dominated by excitons, making their electronic bandgap more difficult to measure. In this work, we measure the electronic bandgap of networks of polymer-wrapped semiconducting single-walled carbon nanotubes (s-SWCNTs) using non-ideal p-n diodes. We show that our s-SWCNT networks have a short minority carrier lifetime due to the presence of interface trap states, making the diodes non-ideal. We use the generation and recombination leakage currents from these non-ideal diodes to measure the electronic bandgap and excitonic levels of different polymer-wrapped s-SWCNTs with varying diameters: arc discharge (~1.55 nm), (7,5) (0.83 nm), and (6,5) (0.76 nm). Our values are consistent with theoretical predictions, providing insight into the fundamental properties of networks of s-SWCNTs. The techniques outlined here demonstrate a robust strategy that can be applied to measuring the electronic bandgaps and exciton binding energies of a broad variety of nanoscale and quantum-confined semiconductors, including the most modern nanoscale transistors that rely on nanowire geometries.

Robust Biosensor Based on Carbon Nanotubes/Protein Hybrid Electrolyte Gated Transistors

Semiconducting single walled carbon nanotubes (SWCNTs) are promising materials for biosensing applications with electrolyte-gated transistors (EGT). However, to be employed in EGT devices, SWCNTs often require lengthy solution-processing fabrication techniques. Here, we introduce a simple solution-based method that allows fabricating EGT devices from stable dispersions of SWCNTs/bovine serum albumin (BSA) hybrids in water. The dispersion is then deposited on a substrate allowing the formation of a SWCNTs random network as the semiconducting channel. We demonstrate that this methodology allows the fabrication of EGT devices with electric performances that allow their use in biosensing applications. We demonstrate their application for the detection of cortisol in solution, upon gate electrode functionalization with anti-cortisol antibodies. This is a robust and cost-effective methodology that sets the ground for a SWCNT/BSA-based biosensing platform that allows overcoming many limitations of standard SWCNTs biosensor fabrications.

Radial Alignment of Carbon Nanotubes via Dead-End Filtration

Dead-end filtration is a facile method to globally align single wall carbon nanotubes (SWCNTs) in large area films with a 2D order parameter, S_2D , approaching unity. Uniaxial alignment has been achieved using pristine and hot-embossed membranes but more sophisticated geometries have yet to be investigated. In this work, three different patterns with radial symmetry and an area of 3.8 cm² are created. Two of these patterns are replicated by the filtered SWCNTs and S_2D values of ≈0.85 are obtained. Each of the radially aligned SWCNT films is characterized by scanning cross-polarized microscopy in reflectance and laser imaging in transmittance with linear, radial, and azimuthal polarized light fields. The former is used to define a novel indicator akin to the 2D order parameter using Malu's law, yielding 0.82 for the respective film. The films are then transferred to a flexible printed circuit board and terminal two-probe electrical measurements are conducted to explore the potential of those new alignment geometries.

Chirality-dependent electrical transport properties of carbon nanotubes obtained by experimental measurement

Establishing the relationship between the electrical transport properties of single-wall carbon nanotubes (SWCNTs) and their structures is critical for the design of high-performance SWCNT-based electronic and optoelectronic devices. Here, we systematically investigated the effect of the chiral structures of SWCNTs on their electrical transport properties by measuring the performance of thin-film transistors constructed by eleven distinct (n, m) single-chirality SWCNT films. The results show that, even for SWCNTs with the same diameters but different chiral angles, the difference in the on-state current or carrier mobility could reach an order of magnitude. Further analysis indicates that the electrical transport properties of SWCNTs have strong type and family dependence. With increasing chiral angle for the same-family SWCNTs, Type I SWCNTs exhibit increasing on-state current and mobility, while Type II SWCNTs show the reverse trend. The differences in the electrical properties of the same-family SWCNTs with different chiralities can be attributed to their different electronic band structures, which determine the contact barrier between electrodes and SWCNTs, intrinsic resistance and intertube contact resistance. Our present findings provide an important physical basis for performance optimization and application expansion of SWCNT-based devices.

Single-chirality of single-walled carbon nanotubes (SWCNTs) through chromatography and its potential biological applications

Gel chromatography is used to separate single-chirality and selective-diameter SWCNTs. We also explore the use of photothermal therapy and biosensor applications based on single-chirality, selected-diameter, and unique geometric shape.

Nanoscale Mapping of Carrier Mobilities in the Ballistic Transports of Carbon Nanotube Networks

Much progress has been made in the nanoscale analysis of nanostructures, while the mapping of key charge transport properties such as a carrier mobility remains a challenge, especially for one-dimensional systems. Here, we report the nanoscale mapping of carrier mobilities in carbon nanotube (CNT) networks and show that charge transport behaviors varied depending on network structures. In this work, the spatial distribution of localized charge transport properties such as mobilities and charge trap densities in CNT networks were mapped via a scanning noise microscopy. The mobility map was obtained from the conductivity maps measured at different back-gate biases, showing up to two orders of mobility variations depending on localized network structures. Furthermore, from the maps, correlations between mobility/conductivity and charge trap density were analyzed to determine charge transport mechanisms. In metallic CNT networks, the regions with rather high (low) or low (high) charge trap densities (mobilities) exhibited a diffusive or ballistic transport behavior, respectively. Interestingly, semiconducting CNT networks also exhibited a gradual transition from a diffusive to a ballistic transport behavior as the CNT mobility was increased by reaching the on-state with negative gate biases. The mapping of the cross-patterned CNT network showed that metallic CNT electrodes could achieve a good electrical contact with semiconducting CNTs without high contact resistance regions. Since this method allowed one to map versatile charge transport properties such as mobility, conductivity, and charge trap density, it can be a powerful tool for basic research about charge transport phenomena and practical device applications.

Probing Carrier Dynamics in sp3-Functionalized Single-Walled Carbon Nanotubes with Time-Resolved Terahertz Spectroscopy

The controlled introduction of covalent sp³ defects into semiconducting single-walled carbon nanotubes (SWCNTs) gives rise to exciton localization and red-shifted near-infrared luminescence. The single-photon emission characteristics of these functionalized SWCNTs make them interesting candidates for electrically driven quantum light sources. However, the impact of sp³ defects on the carrier dynamics and charge transport in carbon nanotubes remains an open question. Here, we use ultrafast, time-resolved optical-pump terahertz-probe spectroscopy as a direct and quantitative technique to investigate the microscopic and temperature-dependent charge transport properties of pristine and functionalized (6,5) SWCNTs in dispersions and thin films. We find that sp³ functionalization increases charge carrier scattering, thus reducing the intra-nanotube carrier mobility. In combination with electrical measurements of SWCNT network field-effect transistors, these data enable us to distinguish between contributions of intra-nanotube band transport, sp³ defect scattering and inter-nanotube carrier hopping to the overall charge transport properties of nanotube networks.

Single layer aligned semiconducting single-walled carbon nanotube array with high linear density

Highly ordered semiconducting single-walled carbon nanotubes(sc-SWCNTs) array with high purity, high linear density and controllable manner is strongly desired for carbon-based integrated circuits, yet it remains a big challenge. Herein, close-packed single layered and controllably aligned sc-SWCNTs arrays were obtained through dielectrophoresis using a high purity sc-SWCNT dispersion. Under optimized condition of length and average number of interconnecting junctions across the channel full of aligned sc-SWCNTs, field effect transistors (FETs) with high performance were achieved with both a high on/off current ratio and large carrier mobility. Based on the optimized channel length, by systematically optimizing the dielectrophoresis parameters of the frequency and duration of applied AC voltage (V_pp), the highly ordered sc-SWCNTs arrays with an ultra-high linear density of 54 ± 2 tubesμm^-1showed relatively high device performance of FET. The fabrication process optimized in this report can be further extended and applied in large-area, low-cost carbon-based integrated circuits.

Enhancing Electrochemical Transistors Based on Polymer-Wrapped (6,5) Carbon Nanotube Networks with Ethylene Glycol Side Chains

Organic electrochemical transistors (ECTs) are an important building block for bioelectronics. To promote the required ion transport through the active layer, state-of-the-art semiconducting polymers feature hydrophilic ethylene glycol side chains that increase the volumetric capacitance and transconductance of the devices. Here, we apply this concept to polymer-wrapped single-walled carbon nanotubes (SWCNTs) as a high-mobility semiconducting material. We replace the polyfluorene copolymer (PFO-BPy), which is used for selectively dispersing semiconducting (6,5) SWCNTs and contains octyl side chains, by an equivalent polymer with tetraethylene glycol side chains. Aerosol-jet printed networks of these SWCNTs are applied as the active layer in water-gated ECTs. These show high hole mobilities (3-15 cm²·V^-1·s^-1), significantly improved volumetric capacitances and larger transconductances. Thin networks of SWCNTs reach (219 ± 16) F·cm^-1·V^-1·s^-1 as the product of mobility and volumetric capacitance. In situ photoluminescence measurements show more efficient quenching of the near-infrared fluorescence for nanotube networks with hydrophilic glycol side chains compared to those with hydrophobic alkyl side chains, thus corroborating more complete charging under bias. Overall, networks of semiconducting SWCNTs with such tailored wrapping polymers provide excellent device performance. Combined with their inherent mechanical flexibility and durability, they constitute a competitive material for bioelectronics.

Beyond Color: The New Carbon Ink

For thousands of years, carbon ink has been used as a black color pigment for writing and painting purposes. However, recent discoveries of nanocarbon materials, including fullerenes, carbon nanotubes, graphene, and their various derivative forms, together with the advances in large-scale synthesis, are enabling a whole new generation of carbon inks that can serve as an intrinsically programmable materials platform for developing advanced functionalities far beyond color. The marriage between these multifunctional nanocarbon inks with modern printing technologies is facilitating and even transforming many applications, including flexible electronics, wearable and implantable sensors, actuators, and autonomous robotics. This review examines recent progress in the reborn field of carbon inks, highlighting their programmability and multifunctionality for applications in flexible electronics and stimuli-responsive devices. Current challenges and opportunities will also be discussed from a materials science perspective towards the advancement of carbon ink for new applications beyond color.

Charge Transport in and Electroluminescence from sp3-Functionalized Carbon Nanotube Networks

The controlled covalent functionalization of semiconducting single-walled carbon nanotubes (SWCNTs) with luminescent sp³ defects leads to additional narrow and tunable photoluminescence features in the near-infrared and even enables single-photon emission at room temperature, thus strongly expanding their application potential. However, the successful integration of sp³-functionalized SWCNTs in optoelectronic devices with efficient defect state electroluminescence not only requires control over their emission properties but also a detailed understanding of the impact of functionalization on their electrical performance, especially in dense networks. Here, we demonstrate ambipolar, light-emitting field-effect transistors based on networks of pristine and functionalized polymer-sorted (6,5) SWCNTs. We investigate the influence of sp³ defects on charge transport by employing electroluminescence and (charge-modulated) photoluminescence spectroscopy combined with temperature-dependent current-voltage measurements. We find that sp³-functionalized SWCNTs actively participate in charge transport within the network as mobile carriers efficiently sample the sp³ defects, which act as shallow trap states. While both hole and electron mobilities decrease with increasing degree of functionalization, the transistors remain fully operational, showing electroluminescence from the defect states that can be tuned by the defect density.

Excess Polymer in Single-Walled Carbon Nanotube Thin-Film Transistors: Its Removal Prior to Fabrication Is Unnecessary

Ultrapure semiconducting single-walled carbon nanotube (sc-SWNT) dispersions produced through conjugated polymer sorting are ideal candidates for the fabrication of solution-processed organic electronic devices on a commercial scale. Protocols for sorting and dispersing ultrapure sc-SWNTs with conjugated polymers for thin-film transistor (TFT) applications have been well refined. Conventional wisdom dictates that removal of excess unbound polymer through filtration or centrifugation is necessary to produce high-performance TFTs. However, this is time-consuming, wasteful, and resource-intensive. In this report, we challenge this paradigm and demonstrate that excess unbound polymer during semiconductor film fabrication is not necessarily detrimental to device performance. Over 1200 TFT devices were fabricated from 30 unique polymer-sorted SWNT dispersions, prepared using two different alternating copolymers. Detailed Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) studies of the random-network semiconductor films demonstrated that a simple solvent rinse during TFT fabrication was sufficient to remove unbound polymer from the sc-SWNT films, thus eliminating laborious polymer removal before TFT fabrication. Furthermore, below a threshold polymer concentration, the presence of excess polymer during fabrication did not significantly impede TFT performance. Preeminent performance was achieved for devices prepared from native polymer-sorted SWNT dispersions containing the "original" amount of excess unbound polymer (immediately following enrichment). Lastly, we developed an open-source Machine Learning algorithm to quantitatively analyze AFM images of SWNT films for surface coverage, number of tubes, and tube alignment.

Sorting and decoration of semiconducting single-walled carbon nanotubes via the quaternization reaction

A study for the selective separation and functionalization of alcohol-soluble semiconducting single-walled carbon nanotubes (sc-SWCNTs) is carried out by polymer main-chain engineering. Introducing tertiary amine groups endows the functionalized sc-SWCNTs with alcohol-soluble properties and introducing the pyrimidine rings allows to increase the selective purity of sc-SWCNTs. In this study, a series of poly[(9,9-dioctylfluorene)-2,7-(9,9-bis(3'-(N,N-dimethylamino)propyl)-fluorene)] m -alt-[2-methylpyrimidine-2,7-(9,9-dioctylfluorene)] n (PFPy) are used for the selective dispersion of semiconducting single-walled carbon nanotubes, where n and m are the composition ratio of the copolymer. When m = n, the effective isolation of sc-SWCNTs with purity greater than 99% is achieved. The alcohol-soluble sc-SWCNTs with a diameter in the range of 1.1-1.4 nm are obtained through designing reasonable molecular structure. Moreover, the particular preference of PFPy (m = n) for sc-SWCNTs was studied via density functional theory (DFT) calculations and it was proved to be a promising method for the separation and functionalization of sc-SWCNTs.

Printed carbon nanotube thin-film transistors: progress on printable materials and the path to applications

Printing technologies have attracted significant attention owing to their potential use in the low-cost manufacturing of custom or large-area flexible electronics. Among the many printable electronic materials that have been explored, semiconducting carbon nanotubes (CNTs) have shown increasing promise based on their exceptional electrical and mechanical properties, relative stability in air, and compatibility with several printing techniques to form semiconducting thin films. These attractive attributes make printed CNT thin films promising for applications including, but not limited to, sensors and display backplanes - at the heart of which is electronics' most versatile device: the transistor. In this review, we present a summary of recent advancements in the field of printed carbon nanotube thin-film transistors (CNT-TFTs). In addition to an introduction of different printing techniques, together with their strengths and limitations, we discuss key aspects of ink/material selection and processing of various device components, including the CNT channels, contacts, and gate insulators. It is clear that printed CNT-TFTs are rapidly advancing, but there remain challenges, which are discussed along with current techniques to resolve them and future developments towards practical applications from these devices. There has been interest in low-cost, printable transistors for many years and the CNT-TFTs show great promise for delivering, but will not become a reality without further research advancement.

Charge and Thermoelectric Transport in Polymer-Sorted Semiconducting Single-Walled Carbon Nanotube Networks

Understanding the charge transport mechanisms in chirality-selected single-walled carbon nanotube (SWCNT) networks and the influence of network parameters is essential for further advances of their optoelectronic and thermoelectric applications. Here, we report on charge density and temperature-dependent field-effect mobility and on-chip field-effect-modulated Seebeck coefficient measurements of polymer-sorted monochiral small-diameter (6,5) (0.76 nm) and mixed large-diameter SWCNT (1.17-1.55 nm) networks (plasma torch nanotubes, RN) with different network densities and length distributions. All untreated networks display balanced ambipolar transport and electron-hole symmetric Seebeck coefficients. We show that charge and thermoelectric transport in SWCNT networks can be modeled by the Boltzmann transport formalism, incorporating transport in heterogeneous media and fluctuation-induced tunneling. Considering the diameter-dependent one-dimensional density of states (DoS) of the SWCNTs composing the network, we can simulate the charge density and temperature-dependent Seebeck coefficients. Our simulations suggest that scattering in these networks cannot be described as simple one-dimensional acoustic and optical phonon scattering as for single SWCNTs. Instead the relaxation time is inversely proportional to energy (τ ∝ (E - E_C)^s, s = -1, E_C being the energy of the first van Hove singularity), presumably pointing toward the more two-dimensional character of scattering events and the necessity to include scattering at the SWCNT junctions. Finally, our observation of higher power factors in trap-free, 1,2,4,5-tetrakis(tetramethylguanidino)benzene-treated (6,5) networks than in the RN networks emphasizes the importance of chirality selection to tune the width of the DoS. To benefit from both higher intrinsic mobilities and a large thermally accessible DoS, we propose trap-free, narrow DoS distribution, large-diameter SWCNT networks for both electronic and thermoelectric applications.

Chirality-Enriched Carbon Nanotubes for Next-Generation Computing

For the past half century, silicon has served as the primary material platform for integrated circuit technology. However, the recent proliferation of nontraditional electronics, such as wearables, embedded systems, and low-power portable devices, has led to increasingly complex mechanical and electrical performance requirements. Among emerging electronic materials, single-walled carbon nanotubes (SWCNTs) are promising candidates for next-generation computing as a result of their superlative electrical, optical, and mechanical properties. Moreover, their chirality-dependent properties enable a wide range of emerging electronic applications including sub-10 nm complementary field-effect transistors, optoelectronic integrated circuits, and enantiomer-recognition sensors. Here, recent progress in SWCNT-based computing devices is reviewed, with an emphasis on the relationship between chirality enrichment and electronic functionality. In particular, after highlighting chirality-dependent SWCNT properties and chirality enrichment methods, the range of computing applications that have been demonstrated using chirality-enriched SWCNTs are summarized. By identifying remaining challenges and opportunities, this work provides a roadmap for next-generation SWCNT-based computing.

Guiding Charge Transport in Semiconducting Carbon Nanotube Networks by Local Optical Switching

Photoswitchable, ambipolar field-effect transistors (FETs) are fabricated with dense networks of polymer-sorted, semiconducting single-walled carbon nanotubes (SWCNTs) in top-gate geometry with photochromic molecules mixed in the polymer matrix of the gate dielectric. Both hole and electron transport are strongly affected by the presence of spiropyran and its photoisomer merocyanine. A strong and persistent reduction of charge carrier mobilities and thus drain currents upon UV illumination (photoisomerization) and its recovery by annealing give these SWCNT transistors the basic properties of optical memory devices. Temperature-dependent mobility measurements and density functional theory calculations indicate scattering of charge carriers by the large dipoles of the merocyanine molecules and electron trapping by protonated merocyanine as the underlying mechanism. The direct dependence of carrier mobility on UV exposure is employed to pattern high- and low-resistance areas within the FET channel and thus to guide charge transport through the nanotube network along predefined paths with micrometer resolution. Near-infrared electroluminescence imaging enables the direct visualization of such patterned current pathways with good contrast. Elaborate mobility and thus current density patterns can be created by local optical switching, visualized and erased again by reverse isomerization through heating.

Probing Mobile Charge Carriers in Semiconducting Carbon Nanotube Networks by Charge Modulation Spectroscopy

Solution-processed networks of semiconducting, single-walled carbon nanotubes (SWCNTs) have attracted considerable attention as materials for next-generation electronic devices and circuits. However, the impact of the SWCNT network composition on charge transport on a microscopic level remains an open and complex question. Here, we use charge-modulated absorption and photoluminescence spectroscopy to probe exclusively the mobile charge carriers in monochiral (6,5) and mixed SWCNT network field-effect transistors. Ground-state bleaching and charge-induced trion absorption features as well as exciton quenching are observed depending on applied voltage and modulation frequency. Through correlation of the modulated mobile carrier density and the optical response of the nanotubes, we find that charge transport in mixed SWCNT networks depends strongly on the diameter and thus bandgap of the individual species. Mobile charges are preferentially transported by small bandgap SWCNTs especially at low gate voltages, whereas large bandgap species only start to participate at higher carrier concentrations. Our results demonstrate the excellent suitability of modulation spectroscopy to investigate charge transport in nanotube network transistors and highlight the importance of SWCNT network composition for their performance.