1
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Shin W, Byeon J, Koo R, Lim J, Kang JH, Jang A, Lee J, Kim J, Cha S, Pak S, Lee S. Toward Ideal Low-Frequency Noise in Monolayer CVD MoS 2 FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2307196. [PMID: 38773725 PMCID: PMC11267264 DOI: 10.1002/advs.202307196] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2023] [Revised: 03/17/2024] [Indexed: 05/24/2024]
Abstract
The pursuit of sub-1-nm field-effect transistor (FET) channels within 3D semiconducting crystals faces challenges due to diminished gate electrostatics and increased charge carrier scattering. 2D semiconductors, exemplified by transition metal dichalcogenides, provide a promising alternative. However, the non-idealities, such as excess low-frequency noise (LFN) in 2D FETs, present substantial hurdles to their realization and commercialization. In this study, ideal LFN characteristics in monolayer MoS2 FETs are attained by engineering the metal-2D semiconductor contact and the subgap density of states (DOS). By probing non-ideal contact resistance effects using CuS and Au electrodes, it is uncovered that excess contact noise in the high drain current (ID) region can be substantially reduced by forming a van der Waals junction with CuS electrodes. Furthermore, thermal annealing effectively mitigates sulfur vacancy-induced subgap density of states (DOS), diminishing excess noise in the low ID region. Through meticulous optimization of metal-2D semiconductor contacts and subgap DOS, alignment of 1/f noise with the pure carrier number fluctuation model is achieved, ultimately achieving the sought-after ideal LFN behavior in monolayer MoS2 FETs. This study underscores the necessity of refining excess noise, heralding improved performance and reliability of 2D electronic devices.
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Affiliation(s)
- Wonjun Shin
- Inter‐University Semiconductor Research CenterDepartment of Electrical and Computer EngineeringSeoul National UniversitySeoul08826Republic of Korea
- Department of Semiconductor Convergence EngineeringSungkyunkwan UniversityGyeonggi‐doSuwon16419Republic of Korea
| | - Junsung Byeon
- Department of PhysicsSungkyunkwan UniversitySuwonGyeonggi‐do16419Republic of Korea
| | - Ryun‐Han Koo
- Inter‐University Semiconductor Research CenterDepartment of Electrical and Computer EngineeringSeoul National UniversitySeoul08826Republic of Korea
| | - Jungmoon Lim
- Department of PhysicsSungkyunkwan UniversitySuwonGyeonggi‐do16419Republic of Korea
| | - Jung Hyeon Kang
- Division of ElectricalElectronic and Control EngineeringKongju National UniversityCheonan31080Republic of Korea
| | - A‐Rang Jang
- Division of ElectricalElectronic and Control EngineeringKongju National UniversityCheonan31080Republic of Korea
| | - Jong‐Ho Lee
- Inter‐University Semiconductor Research CenterDepartment of Electrical and Computer EngineeringSeoul National UniversitySeoul08826Republic of Korea
- Ministry of Science and ICTSejong30109Republic of Korea
| | - Jae‐Joon Kim
- Inter‐University Semiconductor Research CenterDepartment of Electrical and Computer EngineeringSeoul National UniversitySeoul08826Republic of Korea
| | - SeungNam Cha
- Department of PhysicsSungkyunkwan UniversitySuwonGyeonggi‐do16419Republic of Korea
| | - Sangyeon Pak
- School of Electronic and Electrical EngineeringHongik UniversitySeoul04066Republic of Korea
| | - Sung‐Tae Lee
- School of Electronic and Electrical EngineeringHongik UniversitySeoul04066Republic of Korea
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2
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Wang Q, Song Y, Ran Y, Li Y, Pan Y, Ye Y. Coplanar MoS 2-MoTe 2 Heterojunction With the Same Crystal Orientation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308635. [PMID: 38158339 DOI: 10.1002/smll.202308635] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2023] [Revised: 12/11/2023] [Indexed: 01/03/2024]
Abstract
Two-dimensional (2D) coplanar heterostructure enables high-performance optoelectronic devices, such as p-n heterojunctions. However, realizing site-controllable and shape-specific 2D coplanar heterojunctions composed of two semiconductors with the same crystal orientation still requires the development of new growth methods. Here, a route to fabricate MoS2-MoTe2 coplanar heterojunctions with the same crystal orientation is reported by exploiting the properties of phase transition and atomic rearrangement during the growth of 2H-MoTe2. Raman spectroscopy and electron microscopy techniques reveal the chemical composition and lattice structure of the heterostructure. Both MoS2 and MoTe2 in the heterojunction are single crystals and have the same lattice orientation, and their shapes can be arbitrarily defined by electron beam lithography. Electrical measurements show that the MoS2 and MoTe2 channels exhibit n-type and p-type transfer characteristics, respectively. The coplanar epitaxy technology can be used to prepare more coplanar heterostructures with novel device functions.
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Affiliation(s)
- Qi Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Yiwen Song
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Yuqia Ran
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Yanping Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Yu Pan
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Yu Ye
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
- Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, Jiangsu, 226010, China
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3
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Jeon HY, Song DS, Shin R, Kwon YM, Jo HK, Lee DH, Lee E, Jang M, So HS, Kang S, Yim S, Myung S, Lee SS, Yoon DH, Kim CG, Lim J, Song W. Wafer-Scale Atomic Assembly for 2D Multinary Transition Metal Dichalcogenides for Visible and NIR Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2312120. [PMID: 38558528 DOI: 10.1002/smll.202312120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2023] [Revised: 02/29/2024] [Indexed: 04/04/2024]
Abstract
The tunable properties of 2D transition-metal dichalcogenide (TMDs) materials are extensively investigated for high-performance and wavelength-tunable optoelectronic applications. However, the precise modification of large-scale systems for practical optoelectronic applications remains a challenge. In this study, a wafer-scale atomic assembly process to produce 2D multinary (binary, ternary, and quaternary) TMDs for broadband photodetection is demonstrated. The large-area growth of homogeneous MoS2, Ni0.06Mo0.26S0.68, and Ni0.1Mo0.9S1.79Se0.21 is carried out using a succinct coating of the single-source precursor and subsequent thermal decomposition combined with thermal evaporation of the chalcogen powder. The optoelectrical properties of the multinary TMDs are dependent on the combination of heteroatoms. The maximum photoresponsivity of the MoS2-, Ni0.06Mo0.26S0.68-, and Ni0.1Mo0.9S1.79Se0.21-based photodetectors is 3.51 × 10-4, 1.48, and 0.9 A W-1 for 532 nm and 0.063, 0.42, and 1.4 A W-1 for 1064 nm, respectively. The devices exhibited excellent photoelectrical properties, which is highly beneficial for visible and near-infrared (NIR) photodetection.
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Affiliation(s)
- Hye Yoon Jeon
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon, 34114, Republic of Korea
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Da Som Song
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon, 34114, Republic of Korea
| | - RoSa Shin
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon, 34114, Republic of Korea
| | - Yeong Min Kwon
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon, 34114, Republic of Korea
| | - Hyeong-Ku Jo
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon, 34114, Republic of Korea
| | - Do Hyung Lee
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon, 34114, Republic of Korea
| | - Eunji Lee
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon, 34114, Republic of Korea
| | - Moonjeong Jang
- National Nano Fab Center (NNFC), Daejeon, 34141, Republic of Korea
| | - Hee-Soo So
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon, 34114, Republic of Korea
| | - Saewon Kang
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon, 34114, Republic of Korea
| | - Soonmin Yim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon, 34114, Republic of Korea
| | - Sung Myung
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon, 34114, Republic of Korea
| | - Sun Sook Lee
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon, 34114, Republic of Korea
| | - Dae Ho Yoon
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Chang Gyoun Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon, 34114, Republic of Korea
| | - Jongsun Lim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon, 34114, Republic of Korea
| | - Wooseok Song
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon, 34114, Republic of Korea
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16149, South Korea
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4
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Kim G, Jeong DW, Lee G, Lee S, Ma KY, Hwang H, Jang S, Hong J, Pak S, Cha S, Cho D, Kim S, Lim J, Lee YW, Shin HS, Jang AR, Lee JO. Unusual Raman Enhancement Effect of Ultrathin Copper Sulfide. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306819. [PMID: 38152985 DOI: 10.1002/smll.202306819] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2023] [Revised: 11/26/2023] [Indexed: 12/29/2023]
Abstract
In surface-enhanced Raman spectroscopy (SERS), 2D materials are explored as substrates owing to their chemical stability and reproducibility. However, they exhibit lower enhancement factors (EFs) compared to noble metal-based SERS substrates. This study demonstrates the application of ultrathin covellite copper sulfide (CuS) as a cost-effective SERS substrate with a high EF value of 7.2 × 104 . The CuS substrate is readily synthesized by sulfurizing a Cu thin film at room temperature, exhibiting a Raman signal enhancement comparable to that of an Au noble metal substrate of similar thickness. Furthermore, computational simulations using the density functional theory are employed and time-resolved photoluminescence measurements are performed to investigate the enhancement mechanisms. The results indicate that polar covalent bonds (Cu─S) and strong interlayer interactions in the ultrathin CuS substrate increase the probability of charge transfer between the analyte molecules and the CuS surface, thereby producing enhanced SERS signals. The CuS SERS substrate demonstrates the selective detection of various dye molecules, including rhodamine 6G, methylene blue, and safranine O. Furthermore, the simplicity of CuS synthesis facilitates large-scale production of SERS substrates with high spatial uniformity, exhibiting a signal variation of less than 5% on a 4-inch wafer.
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Affiliation(s)
- Gwangwoo Kim
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
- Department of Engineering Chemistry, Chungbuk National University, Chungdae-ro 1, Cheongju, 28644, Republic of Korea
| | - Du Won Jeong
- Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
- Department of Physics, Sungkyungkwan University (SKKU), Seobu-Ro 2066, Suwon, 16419, Republic of Korea
| | - Geonhee Lee
- Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
| | - Suok Lee
- Department of Energy Systems, Soonchunhyang University, Soonchunhyang-ro 2, Asan, 31538, Republic of Korea
| | - Kyung Yeol Ma
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Hyuntae Hwang
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Seunghun Jang
- Chemical Data-Driven Research Center, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
| | - John Hong
- School of Materials Science and Engineering, Kookmin University, Jeongneung-ro 77, Seoul, 02707, Republic of Korea
| | - Sangyeon Pak
- School of Electronic and Electrical Engineering, Hongik University, Seoul, 04066, Republic of Korea
| | - SeungNam Cha
- Department of Physics, Sungkyungkwan University (SKKU), Seobu-Ro 2066, Suwon, 16419, Republic of Korea
| | - Donghwi Cho
- Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
| | - Sunkyu Kim
- Graduate School of Energy Science and Technology, Chungnam National University, Daejeon, 34134, Republic of Korea
| | - Jongchul Lim
- Graduate School of Energy Science and Technology, Chungnam National University, Daejeon, 34134, Republic of Korea
| | - Young-Woo Lee
- Department of Energy Systems, Soonchunhyang University, Soonchunhyang-ro 2, Asan, 31538, Republic of Korea
| | - Hyeon Suk Shin
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - A-Rang Jang
- Division of Electrical, Electronic and Control Engineering, Kongju National University, Cheonan-daero 1223-24, Cheonan, 31080, Republic of Korea
| | - Jeong-O Lee
- Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
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5
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Liu Z, Tee SY, Guan G, Han MY. Atomically Substitutional Engineering of Transition Metal Dichalcogenide Layers for Enhancing Tailored Properties and Superior Applications. NANO-MICRO LETTERS 2024; 16:95. [PMID: 38261169 PMCID: PMC10805767 DOI: 10.1007/s40820-023-01315-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2023] [Accepted: 11/30/2023] [Indexed: 01/24/2024]
Abstract
Transition metal dichalcogenides (TMDs) are a promising class of layered materials in the post-graphene era, with extensive research attention due to their diverse alternative elements and fascinating semiconductor behavior. Binary MX2 layers with different metal and/or chalcogen elements have similar structural parameters but varied optoelectronic properties, providing opportunities for atomically substitutional engineering via partial alteration of metal or/and chalcogenide atoms to produce ternary or quaternary TMDs. The resulting multinary TMD layers still maintain structural integrity and homogeneity while achieving tunable (opto)electronic properties across a full range of composition with arbitrary ratios of introduced metal or chalcogen to original counterparts (0-100%). Atomic substitution in TMD layers offers new adjustable degrees of freedom for tailoring crystal phase, band alignment/structure, carrier density, and surface reactive activity, enabling novel and promising applications. This review comprehensively elaborates on atomically substitutional engineering in TMD layers, including theoretical foundations, synthetic strategies, tailored properties, and superior applications. The emerging type of ternary TMDs, Janus TMDs, is presented specifically to highlight their typical compounds, fabrication methods, and potential applications. Finally, opportunities and challenges for further development of multinary TMDs are envisioned to expedite the evolution of this pivotal field.
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Affiliation(s)
- Zhaosu Liu
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, People's Republic of China
| | - Si Yin Tee
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
| | - Guijian Guan
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, People's Republic of China.
| | - Ming-Yong Han
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, People's Republic of China.
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6
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Liu W, Xiong Y, Liu Q, Chang X, Tian J. The construction of S-scheme heterostructure in ultrathin WS 2/Zn 3In 2S 6 nanosheets for enhanced photocatalytic hydrogen evolution. J Colloid Interface Sci 2023; 651:633-644. [PMID: 37562305 DOI: 10.1016/j.jcis.2023.07.200] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/16/2023] [Revised: 07/04/2023] [Accepted: 07/30/2023] [Indexed: 08/12/2023]
Abstract
Metal sulfide based photocatalysts are considered to be economic, environmentally benign and renewable. The rapid recombination of photogenerated electrons and holes and low solar energy utilization efficiency, however, remain a huge bottleneck. Herein, two-dimensional/two-dimensional (2D/2D) S-scheme WS2/Zn3In2S6 heterostructure with ultrathin nanosheets intervening between neighboring component has been designed. The large and intimate S-scheme heterojunctions facilitate interfacial charge separation/transfer and optimize the available redox potential. Besides, the ultrathin 2D/2D heterostructure ensures large specific surface area, maximized interface synergistic interaction, and effective exposure of surface active sites. As a result, 2 wt% WS2/Zn3In2S6 exhibits a high photocatalytic hydrogen production rate of 30.21 mmol·g-1·h-1 under simulated solar light illumination with an apparent quantum efficiency of 56.1% at 370 nm monochromatic light, far exceeding pristine Zn3In2S6 (6.65 mmol·g-1·h-1). Our work underscores the significance of integrating morphology engineering and S-scheme heterojunctions design for high-efficient and low-cost photocatalysts.
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Affiliation(s)
- Wendi Liu
- School of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, Shandong, PR China
| | - Ya Xiong
- School of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, Shandong, PR China.
| | - Qian Liu
- School of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, Shandong, PR China
| | - Xiao Chang
- College of Physics, Qingdao University, Qingdao 266071, Shandong, PR China
| | - Jian Tian
- School of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, Shandong, PR China.
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7
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Kohler DD, Morrow DJ, Zhao Y, Scheeler JM, Jin S, Wright JC. Photoluminescence, Reflection Contrast, Raman, and Second Harmonic Generation Spectroscopies Spatially Resolve Strain, Alloying, Defects, and Electronic Characteristics of Lateral MX 2 Heterostructures. J Phys Chem Lett 2023; 14:9424-9432. [PMID: 37824438 DOI: 10.1021/acs.jpclett.3c02407] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/14/2023]
Abstract
Lateral heterostructures of two-dimensional (2D) transition metal dichalcogenides offer promise as platforms for a wide variety of applications from exotic physics to environmental control. Further development and study of these heterostructures require characterization methods that assess the quality of the heterostructures. Here, we extend current characterization strategies to create photoluminescence (PL), Raman, reflection contrast, and second harmonic generation (SHG) maps of individual monolayer core-shell WS2-MoS2 lateral heterostructures that were synthesized via water vapor assisted chemical vapor transport. Together, these methods provide the correlations required to resolve the effects of excitons, trions, lattice defects, strain, and alloying. The comparisons show substantial differences, especially in the regions near and at the narrow heterointerface. Comparisons between the different spectral maps show the importance of metal alloying for understanding the electronic and spatial structures of heterostructures. The results are compared to previous work on similar lateral heterostructures created by different methods.
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Affiliation(s)
- Daniel D Kohler
- Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Darien J Morrow
- Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Yuzhou Zhao
- Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Jason M Scheeler
- Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Song Jin
- Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - John C Wright
- Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
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8
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Sun X, Liu Y, Shi J, Si C, Du J, Liu X, Jiang C, Yang S. Controllable Synthesis of 2H-1T' Mo x Re (1- x ) S 2 Lateral Heterostructures and Their Tunable Optoelectronic Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304171. [PMID: 37278555 DOI: 10.1002/adma.202304171] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Revised: 05/24/2023] [Indexed: 06/07/2023]
Abstract
Constructing heterostructures and doping are valid ways to improve the optoelectronic properties of transition metal dichalcogenides (TMDs) and optimize the performance of TMDs-based photodetectors. Compared with transfer techniques, chemical vapor deposition (CVD) has higher efficiency in preparing heterostructures. As for the one-step CVD growth of heterostructures, cross-contamination between the two materials may occur during the growth process, which may provide the possibility of one-step simultaneous realization of controllable doping and formation of alloy-based heterostructures by finely tuning the growth dynamics. Here, 2H-1T' Mox Re(1- x ) S2 alloy-to-alloy lateral heterostructures are synthesized through this one-step CVD growth method, utilizing the cross-contamination and different growth temperatures of the two alloys. Due to the doping of a small amount of Re atoms in 2H MoS2 , 2H Mox Re(1- x ) S2 has a high response rejection ratio in the solar-blind ultraviolet (SBUV) region and exhibits a positive photoconductive (PPC) effect. While the 1T' Mox Re(1- x ) S2 formed by heavily doping Mo atoms into 1T' ReS2 will produce a negative photoconductivity (NPC) effect under UV laser irradiation. The optoelectronic property of 2H-1T' Mox Re(1- x ) S2 -based heterostructures can be modulated by gate voltage. These findings are expected to expand the functionality of traditional optoelectronic devices and have potential applications in optoelectronic logic devices.
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Affiliation(s)
- Xiaona Sun
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Yang Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Jianwei Shi
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Chen Si
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Jiantao Du
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Chengbao Jiang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Shengxue Yang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
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9
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Ha CV, Nguyen Thi BN, Trang PQ, Ponce-Pérez R, Kim Lien VT, Guerrero-Sanchez J, Hoat DM. Semiconductor and topological phases in lateral heterostructures constructed from germanene and AsSb monolayers. RSC Adv 2023; 13:17968-17977. [PMID: 37323461 PMCID: PMC10263102 DOI: 10.1039/d3ra01867a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2023] [Accepted: 05/23/2023] [Indexed: 06/17/2023] Open
Abstract
Two-dimensional (2D) heterostructures have attracted a lot of attention due to their novel properties induced by the synergistic effects of the constituent building blocks. In this work, new lateral heterostructures (LHSs) formed by stitching germanene and AsSb monolayers are investigated. First-principles calculations assert the semimetal and semiconductor characters of 2D germanene and AsSb, respectively. The non-magnetic nature is preserved by forming LHSs along the armchair direction, where the band gap of the germanene monolayer can be increased to 0.87 eV. Meanwhile, magnetism may emerge in the zigzag-interline LHSs depending on the chemical composition. Such that, total magnetic moments up to 0.49 μB can be obtained, being produced mainly at the interfaces. The calculated band structures show either topological gap or gapless protected interface states, with quantum spin-valley Hall effects and Weyl semimetal characters. The results introduce new lateral heterostructures with novel electronic and magnetic properties, which can be controlled by the interline formation.
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Affiliation(s)
- Chu Viet Ha
- Faculty of Physics, TNU-University of Education Thai Nguyen Vietnam
| | - Bich Ngoc Nguyen Thi
- Institute of Physics, Vietnam Academy of Science and Technology 18 Hoang Quoc Viet, Cau Giay Hanoi Vietnam
| | - Pham Quynh Trang
- Faculty of Physics, TNU-University of Education Thai Nguyen Vietnam
| | - R Ponce-Pérez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología Apartado Postal 14 Ensenada Baja California Código Postal 22800 Mexico
| | - Vu Thi Kim Lien
- Institute of Theoretical and Applied Research, Duy Tan University Hanoi 100000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - J Guerrero-Sanchez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología Apartado Postal 14 Ensenada Baja California Código Postal 22800 Mexico
| | - D M Hoat
- Institute of Theoretical and Applied Research, Duy Tan University Hanoi 100000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
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10
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Sutter P, Komsa HP, Kisslinger K, Sutter E. Lateral Integration of SnS and GeSe van der Waals Semiconductors: Interface Formation, Electronic Structure, and Nanoscale Optoelectronics. ACS NANO 2023; 17:9552-9564. [PMID: 37144978 DOI: 10.1021/acsnano.3c02411] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
The emergence of atomically thin crystals has allowed extending materials integration to lateral heterostructures where different 2D materials are covalently connected in the plane. The concept of lateral heterostructures can be generalized to thicker layered crystals, provided that a suitably faceted seed crystal presents edges to which a compatible second van der Waals material can be attached layer by layer. Here, we examine the possibility of integrating multilayer crystals of the group IV monochalcogenides SnS and GeSe, which have the same crystal structure, small lattice mismatch, and similar bandgaps. In a two-step growth process, lateral epitaxy of GeSe on the sidewalls of multilayer SnS flakes (obtained by vapor transport of a SnS2 precursor on graphite) yields heterostructures of laterally stitched crystalline GeSe and SnS without any detectable vertical overgrowth of the SnS seeds and with sharp lateral interfaces. Combined cathodoluminescence spectroscopy and ab initio calculations show the effects of small band offsets on carrier transport and radiative recombination near the interface. The results demonstrate the possibility of forming atomically connected lateral interfaces across many van der Waals layers, which is promising for manipulating optoelectronics, photonics, and for managing charge- and thermal transport.
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Affiliation(s)
- Peter Sutter
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Hannu-Pekka Komsa
- Microelectronics Research Unit, University of Oulu, FI-90014 Oulu, Finland
| | - Kim Kisslinger
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Eli Sutter
- Department of Mechanical & Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
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11
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Guan H, Zhao B, Zhao W, Ni Z. Liquid-precursor-intermediated synthesis of atomically thin transition metal dichalcogenides. MATERIALS HORIZONS 2023; 10:1105-1120. [PMID: 36628937 DOI: 10.1039/d2mh01207c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
With the rapid development of integrated electronics and optoelectronics, methods for the scalable industrial-scale growth of two-dimensional (2D) transition metal dichalcogenide (TMD) materials have become a hot research topic. However, the control of gas distribution of solid precursors in common chemical vapor deposition (CVD) is still a challenge, resulting in the growth of 2D TMDs strongly influenced by the location of the substrate from the precursor powder. In contrast, liquid-precursor-intermediated growth not only avoids the use of solid powders but also enables the uniform distribution of precursors on the substrate through spin-coating, which is much more favorable for the synthesis of wafer-scale TMDs. Moreover, the spin-coating process based on liquid precursors can control the thickness of the spin-coated films by regulating the solution concentration and spin-coating speed. Herein, this review focuses on the recent progress in the synthesis of 2D TMDs based on liquid-precursor-intermediated CVD (LPI-CVD) growth. Firstly, the different assisted treatments based on LPI-CVD strategies for monolayer 2D TMDs are introduced. Then, the progress in the regulation of the different physical properties of monolayer 2D TMDs by substitution of the transition metal and their corresponding heterostructures based on LPI-CVD growth are summarized. Finally, the challenges and perspectives of 2D TMDs based on the LPI-CVD method are discussed.
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Affiliation(s)
- Huiyan Guan
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Bei Zhao
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Weiwei Zhao
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Zhenhua Ni
- School of Physics, Southeast University, Nanjing 211189, China.
- Purple Mountain Laboratories, Nanjing 211111, China
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12
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Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
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Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
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13
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Wang Q, Wang S, Li J, Gan Y, Jin M, Shi R, Amini A, Wang N, Cheng C. Modified Spatially Confined Strategy Enabled Mild Growth Kinetics for Facile Growth Management of Atomically-Thin Tungsten Disulfides. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205638. [PMID: 36446619 PMCID: PMC9875684 DOI: 10.1002/advs.202205638] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/28/2022] [Revised: 10/28/2022] [Indexed: 06/16/2023]
Abstract
Chemical vapor deposition (CVD) has been widely used to produce high quality 2D transitional metal dichalcogenides (2D TMDCs). However, violent evaporation and large diffusivity discrepancy of metal and chalcogen precursors at elevated temperatures often result in poor regulation on X:M molar ratio (M = Mo, W etc.; X = S, Se, and Te), and thus it is rather challenging to achieve the desired products of 2D TMDCs. Here, a modified spatially confined strategy (MSCS) is utilized to suppress the rising S vapor concentration between two aspectant substrates, upon which the lateral/vertical growth of 2D WS2 can be selectively regulated via proper S:W zones correspond to greatly broadened time/growth windows. An S:W-time (SW-T) growth diagram was thus proposed as a mapping guide for the general understanding of CVD growth of 2D WS2 and the design of growth routes for the desired 2D WS2 . Consequently, a comprehensive growth management of atomically thin WS2 is achieved, including the versatile controls of domain size, layer number, and lateral/vertical heterostructures (MoS2 -WS2 ). The lateral heterostructures show an enhanced hydrogen evolution reaction performance. This study advances the substantial understanding to the growth kinetics and provides an effective MSCS protocol for growth design and management of 2D TMDCs.
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Affiliation(s)
- Qun Wang
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen518055P. R. China
| | - Shi Wang
- Department of Physics and Center for Quantum MaterialsHong Kong University of Science and TechnologyHong KongP. R. China
| | - Jingyi Li
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen518055P. R. China
| | - Yichen Gan
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen518055P. R. China
| | - Mengtian Jin
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen518055P. R. China
| | - Run Shi
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen518055P. R. China
| | - Abbas Amini
- Center for Infrastructure EngineeringWestern Sydney UniversityKingswoodNew South Wales2751Australia
| | - Ning Wang
- Department of Physics and Center for Quantum MaterialsHong Kong University of Science and TechnologyHong KongP. R. China
| | - Chun Cheng
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen518055P. R. China
- Guangdong Provincial Key Laboratory of Energy Materials for Electric PowerSouthern University of Science and TechnologyShenzhen518055China
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14
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Chen Y, Tian Z, Wang X, Ran N, Wang C, Cui A, Lu H, Zhang M, Xue Z, Mei Y, Chu PK, Liu J, Hu Z, Di Z. 2D Transition Metal Dichalcogenide with Increased Entropy for Piezoelectric Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201630. [PMID: 35589374 DOI: 10.1002/adma.202201630] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2022] [Revised: 05/15/2022] [Indexed: 06/15/2023]
Abstract
Piezoelectricity in 2D transition metal dichalcogenides (TMDs) has attracted considerable interest because of their excellent flexibility and high piezoelectric coefficient compared to conventional piezoelectric bulk materials. However, the ability to regulate the piezoelectric properties is limited because the entropy is constant for certain binary TMDs other than multielement ones. Herein, in order to increase the entropy, a ternary TMDs alloy, Mo1- x Wx S2 , with different W concentrations, is synthesized. The W concentration in the Mo1- x Wx S2 alloy can be controlled precisely in the low-supersaturation synthesis and the entropy can be tuned accordingly. The Mo0.46 W0.54 S2 alloy (x = 0.54) has the highest configurational entropy and best piezoelectric properties, such as a piezoelectric coefficient of 4.22 pm V-1 and a piezoelectric output current of 150 pA at 0.24% strain. More importantly, it can be combined into a larger package to increase the output current to 600 pA to cater to self-powered applications. Combining with excellent mechanical durability, a mechanical sensor based on the Mo0.46 W0.54 S2 alloy is demonstrated for real-time health monitoring.
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Affiliation(s)
- Yulong Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing, 100049, China
| | - Ziao Tian
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Xiang Wang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Nian Ran
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Chen Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Anyang Cui
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Huihui Lu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing, 100049, China
| | - Miao Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Zhongying Xue
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yongfeng Mei
- Department of Materials Science, Fudan University, Shanghai, 200433, China
| | - Paul K Chu
- Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
| | - Jianjun Liu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Zengfeng Di
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
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15
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Li J, Ma Y, Li Y, Li SS, An B, Li J, Cheng J, Gong W, Zhang Y. Interface Influence on the Photoelectric Performance of Transition Metal Dichalcogenide Lateral Heterojunctions. ACS OMEGA 2022; 7:39187-39196. [PMID: 36340091 PMCID: PMC9631909 DOI: 10.1021/acsomega.2c05151] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/11/2022] [Accepted: 09/12/2022] [Indexed: 06/16/2023]
Abstract
The ultrathin feature of two-dimensional (2D) transition metal dichalcogenides (TMDs) has brought special performance in electronic and optoelectronic fields. When vertical and lateral heterojunctions are made using different TMD combinations, the original properties of premier TMDs can be optimized. Especially for lateral heterojunctions, their sharp interface signifies a narrow space charge region, leading to a strong in-plane built-in electric field, which may contribute to high separation efficiency of photogenerated carriers, good rectification behavior, self-powered photoelectric device construction, etc. However, due to the poor controllability over the synthesis process, obtaining a clean and sharp interface of the lateral heterojunction is still a challenge. Herein, we propose a simple chemical vapor deposition (CVD) method, which can effectively separate the growth process of different TMDs, thus resulting in good regulation of the composition change at the junction region. By this method, MoS2-WS2 lateral heterojunctions with sharp interfaces have been obtained with good rectification characteristics, ∼105 on/off ratio, 1874% external quantum efficiency, and ∼120 ms photoresponse speed, exhibiting a better photoelectric performance than that of the lateral ones with graded junctions.
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Affiliation(s)
- Jingtao Li
- Faculty
of Materials and Manufacturing, Key Laboratory of Advanced Functional
Materials, Ministry of Education, Beijing
University of Technology, Beijing 100124, China
| | - Yang Ma
- Faculty
of Information Technology, Key Laboratory of Opto-Electronics Technology,
Ministry of Education, Beijing University
of Technology, Beijing 100124, China
| | - Yufo Li
- Faculty
of Materials and Manufacturing, Key Laboratory of Advanced Functional
Materials, Ministry of Education, Beijing
University of Technology, Beijing 100124, China
| | - Shao-Sian Li
- Institute
of Materials Science and Engineering, National
Taipei University of Technology, Taipei City 10608, Taiwan
| | - Boxing An
- Faculty
of Materials and Manufacturing, Key Laboratory of Advanced Functional
Materials, Ministry of Education, Beijing
University of Technology, Beijing 100124, China
| | - Jingjie Li
- Faculty
of Materials and Manufacturing, Key Laboratory of Advanced Functional
Materials, Ministry of Education, Beijing
University of Technology, Beijing 100124, China
| | - Jiangong Cheng
- Faculty
of Materials and Manufacturing, Key Laboratory of Advanced Functional
Materials, Ministry of Education, Beijing
University of Technology, Beijing 100124, China
| | - Wei Gong
- Faculty
of Materials and Manufacturing, Key Laboratory of Advanced Functional
Materials, Ministry of Education, Beijing
University of Technology, Beijing 100124, China
| | - Yongzhe Zhang
- Faculty
of Information Technology, Key Laboratory of Opto-Electronics Technology,
Ministry of Education, Beijing University
of Technology, Beijing 100124, China
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16
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Pak S, Son J, Kim T, Lim J, Hong J, Lim Y, Heo CJ, Park KB, Jin YW, Park KH, Cho Y, Cha S. Facile one-pot iodine gas phase doping on 2D MoS 2/CuS FET at room temperature. NANOTECHNOLOGY 2022; 34:015702. [PMID: 36222531 DOI: 10.1088/1361-6528/ac952f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2022] [Accepted: 09/26/2022] [Indexed: 06/16/2023]
Abstract
Electronic devices composed of semiconducting two-dimensional (2D) materials and ultrathin 2D metallic electrode materials, accompanying synergistic interactions and extraordinary properties, are becoming highly promising for future flexible and transparent electronic and optoelectronic device applications. Unlike devices with bulk metal electrode and 2D channel materials, devices with ultrathin 2D electrode and 2D channel are susceptible to chemical reactions in both channel and electrode surface due to the high surface to volume ratio of the 2D structures. However, so far, the effect of doping was primary concerned on the channel component, and there is lack of understanding in terms of how to modulate electrical properties of devices by engineering electrical properties of both the metallic electrode and the semiconducting channel. Here, we propose the novel, one-pot doping of the field-effect transistor (FET) based on 2D molybdenum disulfide (MoS2) channel and ultrathin copper sulfide (CuS) electrodes under mild iodine gas environment at room temperature, which simultaneously modulates electrical properties of the 2D MoS2channel and 2D CuS electrode in a facile and cost-effective way. After one-pot iodine doping, effective p-type doping of the channel and electrode was observed, which was shown through decreased off current level, improvedIon/Ioffratio and subthreshold swing value. Our results open up possibility for effectively and conveniently modulating electrical properties of FETs made of various 2D semiconductors and ultrathin contact materials without causing any detrimental damage.
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Affiliation(s)
- Sangyeon Pak
- School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, Republic of Korea
| | - Jiwon Son
- Department of Physics, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 16419 Republic of Korea
| | - Taehun Kim
- Department of Physics, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 16419 Republic of Korea
| | - Jungmoon Lim
- Department of Physics, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 16419 Republic of Korea
| | - John Hong
- School of Materials Science and Engineering, Kookmin University, Seoul 02707, Republic of Korea
| | - Younhee Lim
- Organic Materials Laboratory, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Co. Ltd, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, Republic of Korea
| | - Chul-Joon Heo
- Organic Materials Laboratory, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Co. Ltd, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, Republic of Korea
| | - Kyung-Bae Park
- Organic Materials Laboratory, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Co. Ltd, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, Republic of Korea
| | - Yong Wang Jin
- Department of Physics, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 16419 Republic of Korea
| | - Kyung-Ho Park
- Convergence Technology Division, Korea Advanced Nano Fab Center, Suwon, Gyeonggi-do 16229, Republic of Korea
| | - Yuljae Cho
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, 800 Dong Chuan Road, Minghang District, Shanghai 200240, People's Republic of China
| | - SeungNam Cha
- Department of Physics, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 16419 Republic of Korea
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17
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Pak S. Controlled p-Type Doping of MoS 2 Monolayer by Copper Chloride. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2893. [PMID: 36079931 PMCID: PMC9458048 DOI: 10.3390/nano12172893] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/29/2022] [Revised: 08/19/2022] [Accepted: 08/19/2022] [Indexed: 06/15/2023]
Abstract
Electronic devices based on two-dimensional (2D) MoS2 show great promise as future building blocks in electronic circuits due to their outstanding electrical, optical, and mechanical properties. Despite the high importance of doping of these 2D materials for designing field-effect transistors (FETs) and logic circuits, a simple and controllable doping methodology still needs to be developed in order to tailor their device properties. Here, we found a simple and effective chemical doping strategy for MoS2 monolayers using CuCl2 solution. The CuCl2 solution was simply spin-coated on MoS2 with different concentrations under ambient conditions for effectively p-doping the MoS2 monolayers. This was systematically analyzed using various spectroscopic measurements using Raman, photoluminescence, and X-ray photoelectron and electrical measurements by observing the change in transfer and output characteristics of MoS2 FETs before and after CuCl2 doping, showing effective p-type doping behaviors as observed through the shift of threshold voltages (Vth) and reducing the ON and OFF current level. Our results open the possibility of providing effective and simple doping strategies for 2D materials and other nanomaterials without causing any detrimental damage.
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Affiliation(s)
- Sangyeon Pak
- School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, Korea
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18
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Suzuki H, Hashimoto R, Misawa M, Liu Y, Kishibuchi M, Ishimura K, Tsuruta K, Miyata Y, Hayashi Y. Surface Diffusion-Limited Growth of Large and High-Quality Monolayer Transition Metal Dichalcogenides in Confined Space of Microreactor. ACS NANO 2022; 16:11360-11373. [PMID: 35793540 DOI: 10.1021/acsnano.2c05076] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Transition metal dichalcogenides (TMDCs), including MoS2 and WS2, are potential candidates for next-generation semiconducting materials owing to their atomically thin structure and strong optoelectrical responses, which allow for flexible optoelectronic applications. Monolayer TMDCs have been grown utilizing chemical vapor deposition (CVD) techniques. Enhancing the domain size with high crystallinity and forming heterostructures are important topics for practical applications. In this study, the size of monolayer WS2 increased via the vapor-liquid-solid growth-based CVD technique utilizing the confined space of the substrate-stacked microreactor. The use of spin-coated metal salts (Na2WO4 and Na2MoO4) and organosulfur vapor allowed us to precisely control the source supply and investigate the growth in a systematic manner. We obtained a relatively low activation energy for growth (1.02 eV), which is consistent with the surface diffusion-limited growth regime observed in the confined space. Through systematic photoluminescence (PL) analysis, we determined that a growth temperature of ∼820 °C is optimal for producing high-quality WS2 with a narrow PL peak width (∼35 meV). By controlling the source balance of W and S, we obtained large-sized fully monolayered WS2 (∼560 μm) and monolayer WS2 with bilayer spots (∼1100 μm). Combining two distinct sources of transition metals, WS2/MoS2 lateral heterostructures were successfully created. In electrical transport measurements, the monolayer WS2 grown under optimal conditions has a high on-current (∼70 μA/μm), on/off ratio (∼5 × 108), and a field-effect mobility of ∼7 cm2/(V s). The field-effect transistor displayed an intrinsic photoresponse with wavelength selectivity that originated from the photoexcited carriers.
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Affiliation(s)
- Hiroo Suzuki
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Ryoki Hashimoto
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Masaaki Misawa
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Yijun Liu
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Misaki Kishibuchi
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Kentaro Ishimura
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Kenji Tsuruta
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Yasuhiko Hayashi
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
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19
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Shin KH, Seo MK, Pak S, Jang AR, Sohn JI. Observation of Strong Interlayer Couplings in WS 2/MoS 2 Heterostructures via Low-Frequency Raman Spectroscopy. NANOMATERIALS 2022; 12:nano12091393. [PMID: 35564101 PMCID: PMC9101887 DOI: 10.3390/nano12091393] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/21/2022] [Revised: 04/14/2022] [Accepted: 04/16/2022] [Indexed: 11/16/2022]
Abstract
Van der Waals (vdW) heterostructures based on two-dimensional (2D) transition metal dichalcogenides (TMDCs), particularly WS2/MoS2 heterostructures with type-II band alignments, are considered as ideal candidates for future functional optoelectronic applications owing to their efficient exciton dissociation and fast charge transfers. These physical properties of vdW heterostructures are mainly influenced by the interlayer coupling occurring at the interface. However, a comprehensive understanding of the interlayer coupling in vdW heterostructures is still lacking. Here, we present a detailed analysis of the low-frequency (LF) Raman modes, which are sensitive to interlayer coupling, in bilayers of MoS2, WS2, and WS2/MoS2 heterostructures directly grown using chemical vapor deposition to avoid undesirable interfacial contamination and stacking mismatch effects between the monolayers. We clearly observe two distinguishable LF Raman modes, the interlayer in-plane shear and out-of-plane layer-breathing modes, which are dependent on the twisting angles and interface quality between the monolayers, in all the 2D bilayered structures, including the vdW heterostructure. In contrast, LF modes are not observed in the MoS2 and WS2 monolayers. These results indicate that our directly grown 2D bilayered TMDCs with a favorable stacking configuration and high-quality interface can induce strong interlayer couplings, leading to LF Raman modes.
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Affiliation(s)
- Ki Hoon Shin
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Korea; (K.H.S.); (M.-K.S.)
| | - Min-Kyu Seo
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Korea; (K.H.S.); (M.-K.S.)
| | - Sangyeon Pak
- School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, Korea;
| | - A-Rang Jang
- Department of Electrical Engineering, Semyung University, Jecheon 27136, Korea
- Correspondence: (A.-R.J.); (J.I.S.)
| | - Jung Inn Sohn
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Korea; (K.H.S.); (M.-K.S.)
- Correspondence: (A.-R.J.); (J.I.S.)
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20
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Zhang J, Zhang X, Wang Y, Cheng P, Feng B, Wu K, Lu Y, Chen L. Giant Bandgap Engineering in Two-Dimensional Ferroelectric α-In 2Se 3. J Phys Chem Lett 2022; 13:3261-3268. [PMID: 35389224 DOI: 10.1021/acs.jpclett.2c00618] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Bandgap engineering is an efficient strategy for controlling the physical properties of semiconductor materials. For flexible two-dimensional (2D) materials, strain provides a nondestructive and adjustable method for bandgap adjustment. Here, we propose that, in 2D materials with out-of-plane ferroelectricity, the antibonding nature of the valence band maximum and conduction band minimum and polarized charge distribution induced by ferroelectricity give rise to giant changes of the bandgap under curvature strain field. This hypothesis was proven by scanning tunneling microscopy/spectroscopy measurements on monolayer α-In2Se3 that revealed that the bandgap of α-In2Se3 increases significantly due to bending. Both experiments and theoretical calculations indicated that the bandgap increases monotonically with the degree of bending of the α-In2Se3 layer. Our work suggests that bending is an effective method for tuning the gaps of 2D ferroelectric materials, providing a new platform for bandgap engineering under the combination of ferroelectricity and strain field.
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Affiliation(s)
- Jiaxiang Zhang
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Xuanlin Zhang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Yu Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Peng Cheng
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Baojie Feng
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Kehui Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Yunhao Lu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Lan Chen
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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21
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Nugera FA, Sahoo PK, Xin Y, Ambardar S, Voronine DV, Kim UJ, Han Y, Son H, Gutiérrez HR. Bandgap Engineering in 2D Lateral Heterostructures of Transition Metal Dichalcogenides via Controlled Alloying. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2106600. [PMID: 35088542 DOI: 10.1002/smll.202106600] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2021] [Revised: 12/20/2021] [Indexed: 06/14/2023]
Abstract
2D heterostructures made of transition metal dichalcogenides (TMD) have emerged as potential building blocks for new-generation 2D electronics due to their interesting physical properties at the interfaces. The bandgap, work function, and optical constants are composition dependent, and the spectrum of applications can be expanded by producing alloy-based heterostructures. Herein, the successful synthesis of monolayer and bilayer lateral heterostructures, based on ternary alloys of MoS2(1- x ) Se2 x -WS2(1- x ) Se2 x , is reported by modifying the ratio of the source precursors; the bandgaps of both materials in the heterostructure are continuously tuned in the entire range of chalcogen compositions. Raman and photoluminescence (PL) spatial maps show good intradomain composition homogeneity. Kelvin probe measurements in different heterostructures reveal composition-dependent band alignments, which can further be affected by unintentional electronic doping during the growth. The fabrication of sequential multijunction lateral heterostructures with three layers of thickness, composed of quaternary and ternary alloys, is also reported. These results greatly expand the available tools kit for optoelectronic applications in the 2D realm.
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Affiliation(s)
- Florence A Nugera
- Department of Physics, University of South Florida, Tampa, FL, 33620, USA
| | - Prasana K Sahoo
- Materials Science Centre, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India
| | - Yan Xin
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA
| | - Sharad Ambardar
- Department of Physics, and Department of Medical Engineering, University of South Florida, Tampa, FL, 33620, USA
| | - Dmitri V Voronine
- Department of Physics, and Department of Medical Engineering, University of South Florida, Tampa, FL, 33620, USA
| | - Un Jeong Kim
- Imaging Device Laboratory, Samsung Advanced Institute of Technology, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Yoojoong Han
- School of Integrative Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Hyungbin Son
- School of Integrative Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea
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Chakraborty SK, Kundu B, Nayak B, Dash SP, Sahoo PK. Challenges and opportunities in 2D heterostructures for electronic and optoelectronic devices. iScience 2022; 25:103942. [PMID: 35265814 PMCID: PMC8898921 DOI: 10.1016/j.isci.2022.103942] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022] Open
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23
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Wang D, Zhang Z, Huang B, Zhang H, Huang Z, Liu M, Duan X. Few-Layer WS 2-WSe 2 Lateral Heterostructures: Influence of the Gas Precursor Selenium/Tungsten Ratio on the Number of Layers. ACS NANO 2022; 16:1198-1207. [PMID: 34927429 DOI: 10.1021/acsnano.1c08979] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) lateral heterostructures based on transition metal dichalcogenides (TMDCs) attract great interest due to their properties and potential applications in electronics and optoelectronics, such as p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, the studies of 2D lateral heterostructures have mainly focused on monolayer nanosheets despite bilayer heterostructures exhibiting higher performance in many electronic and optoelectronic devices. It remains a great challenge to synthesize lateral heterostructures with few layers. Here, we report the growth of bilayer-bilayer (bl-bl), bilayer-bilayer-monolayer (bl-bl-mo), bilayer-monolayer (bl-mo), monolayer-bilayer (mo-bl), and monolayer-monolayer (mo-mo) tungsten disulfide (WS2) and tungsten diselenide (WSe2) lateral heterostructures. The selenium/tungsten (Se/W) ratio of WSe2 precursor powders and the growth atmosphere can be changed with the extension of annealing time, which influences the layer number of the heterostructures. More bilayer WSe2 epitaxially grows at the WS2 edge with short annealing time (high Se/W ratio), and more monolayer WSe2 grows at the WS2 edge with long annealing time (low Se/W ratio). The density functional theory (DFT) calculations provide an in-depth understanding of the growth mechanism. This report expands the 2D material lateral heterostructure family, which gives impetus to their applications in electronics and optoelectronics.
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Affiliation(s)
- Di Wang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082 Changsha, China
| | - Zhengwei Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082 Changsha, China
| | - Bolong Huang
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, China
| | - Hongmei Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082 Changsha, China
| | - Ziwei Huang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082 Changsha, China
| | - Miaomiao Liu
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082 Changsha, China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082 Changsha, China
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Pak S, Jang S, Kim T, Lim J, Hwang JS, Cho Y, Chang H, Jang AR, Park KH, Hong J, Cha S. Electrode-Induced Self-Healed Monolayer MoS 2 for High Performance Transistors and Phototransistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2102091. [PMID: 34480507 DOI: 10.1002/adma.202102091] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/16/2021] [Revised: 07/27/2021] [Indexed: 05/13/2023]
Abstract
Contact engineering for monolayered transition metal dichalcogenides (TMDCs) is considered to be of fundamental challenge for realizing high-performance TMDCs-based (opto) electronic devices. Here, an innovative concept is established for a device configuration with metallic copper monosulfide (CuS) electrodes that induces sulfur vacancy healing in the monolayer molybdenum disulfide (MoS2 ) channel. Excess sulfur adatoms from the metallic CuS electrodes are donated to heal sulfur vacancy defects in MoS2 that surprisingly improve the overall performance of its devices. The electrode-induced self-healing mechanism is demonstrated and analyzed systematically using various spectroscopic analyses, density functional theory (DFT) calculations, and electrical measurements. Without any passivation layers, the self-healed MoS2 (photo)transistor with the CuS contact electrodes show outstanding room temperature field effect mobility of 97.6 cm2 (Vs)-1 , On/Off ratio > 108 , low subthreshold swing of 120 mV per decade, high photoresponsivity of 1 × 104 A W-1 , and detectivity of 1013 jones, which are the best among back-gated transistors that employ 1L MoS2 . Using ultrathin and flexible 2D CuS and MoS2 , mechanically flexible photosensor is also demonstrated, which shows excellent durability under mechanical strain. These findings demonstrate a promising strategy in TMDCs or other 2D material for the development of high performance and functional devices including self-healable sulfide electrodes.
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Affiliation(s)
- Sangyeon Pak
- Department of Physics, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Seunghun Jang
- Chemical Data-Driven Research Center, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
| | - Taehun Kim
- Department of Physics, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Jungmoon Lim
- Department of Physics, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Jae Seok Hwang
- Nanodevices Laboratory, Korea Advanced Nano Fab Center (KANC), Suwon, 16229, Republic of Korea
| | - Yuljae Cho
- University of Michigan - Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Minhang District, Shanghai, 200240, P. R. China
| | - Hyunju Chang
- Chemical Data-Driven Research Center, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
| | - A-Rang Jang
- Department of Electrical Engineering, Semyung University, Chungcheongbuk-do, 27136, Republic of Korea
| | - Kyung-Ho Park
- Nanodevices Laboratory, Korea Advanced Nano Fab Center (KANC), Suwon, 16229, Republic of Korea
| | - John Hong
- School of Materials Science and Engineering, Kookmin University, Seoul, 02707, Republic of Korea
| | - SeungNam Cha
- Department of Physics, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 16419, Republic of Korea
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25
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Yu H, Yan H, Li H, Li Z, Bai Y, Zhu H, Yin S. Spatially Graded Millimeter Sized Mo 1-xW xS 2 Monolayer Alloys: Synthesis and Memory Effect. ACS APPLIED MATERIALS & INTERFACES 2021; 13:44693-44702. [PMID: 34494432 DOI: 10.1021/acsami.1c09176] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The band gap engineering of two-dimensional (2D) transition metal dichacogenides (TMDs) could significantly broaden their applications, especially in electronics and optoelectronics. Alloying is a more effective approach to synthesize 2D ternary TMD materials with tunable bandgaps by regulating the compositions. Whether the alloying could induce memory effects is of interest as a scientific problem and worthy to be studied. A thermal evaporation-assisted chemical vapor deposition (CVD) method was proposed to grow millimeter size gradient alloyed monolayer Mo1-xWxS2. This method reveals a promising and universal methodology for the development of gradient alloyed TMDs because of the precise controlling of each precursor. The synthesized Mo1-xWxS2 monolayer crystal has a gradient composition with x ranging from 0.1 to 1. The W and Mo atoms homogeneously alloyed with random distribution in the Mo1-xWxS2 monolayer. As reported, the deep energy levels induced by sulfur vacancies can be effectively suppressed to shallow energy levels by alloying TMDs. The series distribution of the shallow energy levels in the band of the graded alloy semiconductor can act as multiple charge trapping states, which leads to obvious memory effects in the device. These results present a new opportunity for memory devices and related applications.
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Affiliation(s)
- Hao Yu
- Tianjin Key Laboratory of Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China
| | - Hui Yan
- Tianjin Key Laboratory of Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China
- Key Laboratory of Display Materials and Photoelectric Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Ministry of Education, Tianjin 300384, P. R. China
| | - Heng Li
- Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China
- Jiujiang Research Institute of Xiamen University, Jiujiang 332000, P. R. China
| | - Zhuocheng Li
- Tianjin Key Laboratory of Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China
| | - Yanliu Bai
- Tianjin Key Laboratory of Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China
| | - Hao Zhu
- Tianjin Key Laboratory of Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China
| | - Shougen Yin
- Tianjin Key Laboratory of Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China
- Key Laboratory of Display Materials and Photoelectric Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Ministry of Education, Tianjin 300384, P. R. China
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26
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Vu VT, Vu TTH, Phan TL, Kang WT, Kim YR, Tran MD, Nguyen HTT, Lee YH, Yu WJ. One-Step Synthesis of NbSe 2/Nb-Doped-WSe 2 Metal/Doped-Semiconductor van der Waals Heterostructures for Doping Controlled Ohmic Contact. ACS NANO 2021; 15:13031-13040. [PMID: 34350752 DOI: 10.1021/acsnano.1c02038] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
van der Waals heterostructures (vdWHs) of metallic (m-) and semiconducting (s-) transition-metal dichalcogenides (TMDs) exhibit an ideal metal/semiconductor (M/S) contact in a field-effect transistor. However, in the current two-step chemical vapor deposition process, the synthesis of m-TMD on pregrown s-TMD contaminates the van der Waals (vdW) interface and hinders the doping of s-TMD. Here, NbSe2/Nb-doped-WSe2 metal-doped-semiconductor (M/d-S) vdWHs are created via a one-step synthesis approach using a niobium molar ratio-controlled solution-phase precursor. The one-step growth approach synthesizes Nb-doped WSe2 with a controllable doping concentration and metal/doped-semiconductor vdWHs. The hole carrier concentration can be precisely controlled by controlling the Nb/(W + Nb) molar ratio in the precursor solution from ∼3 × 1011/cm2 at Nb-0% to ∼1.38 × 1012/cm2 at Nb-60%; correspondingly, the contact resistance RC value decreases from 10 888.78 at Nb-0% to 70.60 kΩ.μm at Nb-60%. The Schottky barrier height measurement in the Arrhenius plots of ln(Isat/T2) versus q/KBT demonstrated an ohmic contact in the NbSe2/WxNb1-xSe2 vdWHs. Combining p-doping in WSe2 and M/d-S vdWHs, the mobility (27.24 cm2 V-1 s-1) and on/off ratio (2.2 × 107) are increased 1238 and 4400 times, respectively, compared to that using the Cr/pure-WSe2 contact (0.022 cm2 V-1 s-1 and 5 × 103, respectively). Together, the RC value using the NbSe2 contact shows 2.46 kΩ.μm, which is ∼29 times lower than that of using a metal contact. This method is expected to guide the synthesis of various M/d-S vdWHs and applications in future high-performance integrated circuits.
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Affiliation(s)
- Van Tu Vu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Thi Thanh Huong Vu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Thanh Luan Phan
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Won Tae Kang
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Young Rae Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Minh Dao Tran
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Huong Thi Thanh Nguyen
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Young Hee Lee
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Woo Jong Yu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
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Zhou X, Yu G. Preparation Engineering of Two-Dimensional Heterostructures via Bottom-Up Growth for Device Applications. ACS NANO 2021; 15:11040-11065. [PMID: 34264631 DOI: 10.1021/acsnano.1c02985] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional heterostructures with tremendous electronic and optoelectronic properties hold great promise for nanodevice integrations and applications owing to the wide tunable characteristics. Toward this end, developing construction strategies in allusion to large-scale production of high-quality heterostructures is critical. The mainstream preparation routes are representatively classified into two categories of top-down and bottom-up approaches. Nonetheless, the relatively low reproductivity and the limitation for lateral heterostructure formations of top-down methods at the present stage inherently impeded their further developments. To surmount these obstacles, assembling heterostructures via miscellaneous bottom-up preparation protocols has emerged as a potential solution, attributed to the controllability and clean interface. Three typical approaches of chemical/physical vapor deposition, solution synthesis, and growth under ultrahigh vacuum conditions have shown promise due to the possibilities for preparing heterostructures with predesigned structures, clean interfaces, and the like. Therefore, bottom-up preparation engineering of heterostructures in two dimensions for further device applications is of vital importance. Moreover, heterostructure integrations by these methods have experienced a period of flourishing development in the past few years. In this review, the classical bottom-up growth routes, characterization methods, and latest progress of diverse heterostructures and further device applications are overviewed. Finally, the challenges and opportunities are discussed.
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Affiliation(s)
- Xiahong Zhou
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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28
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Chen Y, Sun M. Two-dimensional WS 2/MoS 2 heterostructures: properties and applications. NANOSCALE 2021; 13:5594-5619. [PMID: 33720254 DOI: 10.1039/d1nr00455g] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
The successful fabrication of WS2/MoS2 heterostructures provides more possibilities for optoelectronic and thermoelectric applications than graphene because of their direct bandgap characteristics; therefore, scientific investigations on WS2/MoS2 heterostructures are more significant and thriving. In this paper, we review the latest research progress in WS2/MoS2 heterostructures, and look forward to their properties and applications. Firstly, we analyze the crystal structure and electronic structure of WS2, MoS2, and their heterostructures. Secondly, we comprehensively present the widely used methods for preparing heterostructures. Finally, based on the unique physical characteristics of WS2/MoS2 heterostructures, we focus on their properties and applications in mechanics, electronics, optoelectronics, and thermoelectronics.
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Affiliation(s)
- Yichuan Chen
- School of Mathematics and Physics, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, PR China.
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Tan C, Wang H, Zhu X, Gao W, Li H, Chen J, Li G, Chen L, Xu J, Hu X, Li L, Zhai T. A Self-Powered Photovoltaic Photodetector Based on a Lateral WSe 2-WSe 2 Homojunction. ACS APPLIED MATERIALS & INTERFACES 2020; 12:44934-44942. [PMID: 32909433 DOI: 10.1021/acsami.0c11456] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Lateral homojunctions made of two-dimensional (2D) layered materials are promising for optoelectronic and electronic applications. Here, we report the lateral WSe2-WSe2 homojunction photodiodes formed spontaneously by thickness modulation in which there are unique band structures of a unilateral depletion region. The electrically tunable junctions can be switched from n-n to p-p diodes, and the corresponding rectification ratio increases from about 1 to 1.2 × 104. In addition, an obvious photovoltaic behavior is observed at zero gate voltage, which exhibits a large open voltage of 0.49 V and a short-circuit current of 0.125 nA under visible light irradiation. In addition, due to the unilateral depletion region, the diode can achieve a high detectivity of 4.4 × 1010 Jones and a fast photoresponse speed of 0.18 ms at Vg = 0 and Vds = 0. The studies not only demonstrated the great potential of the lateral homojunction photodiodes for a self-power photodetector but also allowed for the development of other functional devices, such as a nonvolatile programmable diode for logic rectifiers.
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Affiliation(s)
- Chaoyang Tan
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Huanhuan Wang
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Xiangde Zhu
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Science, Hefei 230031, P. R. China
| | - Wenshuai Gao
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Hui Li
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Jiawang Chen
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Gang Li
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Lijie Chen
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Junmin Xu
- Key Laboratory of Material Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Xiaozong Hu
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
| | - Liang Li
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
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Zhu J, Li W, Huang R, Ma L, Sun H, Choi JH, Zhang L, Cui Y, Zou G. One-Pot Selective Epitaxial Growth of Large WS 2/MoS 2 Lateral and Vertical Heterostructures. J Am Chem Soc 2020; 142:16276-16284. [PMID: 32847357 DOI: 10.1021/jacs.0c05691] [Citation(s) in RCA: 40] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
Controllable nucleation sites play a key role in the selective growth of heterostructures. Here, we are the first to report a one-pot strategy to realize the confined and selective growth of large MoS2/WS2 lateral and vertical heterostructures. A hydroxide-assisted process is introduced to control the nucleation sites, thereby realizing the optional formation of lateral and vertical heterostructures. Time-of-flight secondary ion mass spectrometry verifies the critical role of hydroxide groups toward the controllable growth of these heterostructures. The size of the as-grown MoS2/WS2 lateral heterostructures can be as large as 1 mm, which is the largest lateral size reported thus far. The obtained MoS2/WS2 heterostructures have a high carrier mobility of ∼58 cm2 V-1 s-1, and the maximum on/off current ratio is >108. This approach provides not only a pathway for the selective growth of large MoS2/WS2 lateral and vertical heterostructures but also a fundamental understanding of surface chemistry for controlling the selective growth of transition-metal dichalcogenide heterostructures.
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Affiliation(s)
- Juntong Zhu
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123, China
| | - Wei Li
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123, China
| | - Rong Huang
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China
| | - Liang Ma
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123, China
| | - Haiming Sun
- Clean Nano Energy Center, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Jin-Ho Choi
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123, China
| | - Liqiang Zhang
- Clean Nano Energy Center, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Yi Cui
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China
| | - Guifu Zou
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123, China
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