1
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Shen L, Xiao D, Cao T. Proximity-Induced Exchange Interaction: A New Pathway for Quantum Sensing Using Spin Centers in Hexagonal Boron Nitride. J Phys Chem Lett 2024; 15:4359-4366. [PMID: 38619851 DOI: 10.1021/acs.jpclett.4c00722] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
Defects in hexagonal boron nitride (hBN), a two-dimensional van der Waals material, have attracted a great deal of interest because of its potential in various quantum applications. Due to hBN's two-dimensional nature, the spin center in hBN can be engineered in the proximity of the target material, providing advantages over its three-dimensional counterparts, such as the nitrogen-vacancy center in diamond. Here we propose a novel quantum sensing protocol driven by exchange interaction between the spin center in hBN and the underlying magnetic substrate induced by the magnetic proximity effect. By first-principles calculation, we demonstrate that the induced exchange interaction dominates over the dipole-dipole interaction by orders of magnitude when in the proximity. The interaction remains antiferromagnetic across all stacking configurations between the spin center in hBN and the target van der Waals magnets. Additionally, we explored the scaling behavior of the exchange field as a function of the spatial separation between the spin center and the targets.
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Affiliation(s)
- Lingnan Shen
- Department of Physics, University of Washington, Seattle, Washington 98195-1560, United States
| | - Di Xiao
- Department of Physics, University of Washington, Seattle, Washington 98195-1560, United States
- Department of Materials Science & Engineering, University of Washington, Seattle, Washington 98195-2120, United States
- Pacific Northwest National Laboratory, Richland, Washington 99354, United States
| | - Ting Cao
- Department of Materials Science & Engineering, University of Washington, Seattle, Washington 98195-2120, United States
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2
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Sortino L, Gale A, Kühner L, Li C, Biechteler J, Wendisch FJ, Kianinia M, Ren H, Toth M, Maier SA, Aharonovich I, Tittl A. Optically addressable spin defects coupled to bound states in the continuum metasurfaces. Nat Commun 2024; 15:2008. [PMID: 38443418 PMCID: PMC10914779 DOI: 10.1038/s41467-024-46272-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Accepted: 02/16/2024] [Indexed: 03/07/2024] Open
Abstract
Van der Waals (vdW) materials, including hexagonal boron nitride (hBN), are layered crystalline solids with appealing properties for investigating light-matter interactions at the nanoscale. hBN has emerged as a versatile building block for nanophotonic structures, and the recent identification of native optically addressable spin defects has opened up exciting possibilities in quantum technologies. However, these defects exhibit relatively low quantum efficiencies and a broad emission spectrum, limiting potential applications. Optical metasurfaces present a novel approach to boost light emission efficiency, offering remarkable control over light-matter coupling at the sub-wavelength regime. Here, we propose and realise a monolithic scalable integration between intrinsic spin defects in hBN metasurfaces and high quality (Q) factor resonances, exceeding 102, leveraging quasi-bound states in the continuum (qBICs). Coupling between defect ensembles and qBIC resonances delivers a 25-fold increase in photoluminescence intensity, accompanied by spectral narrowing to below 4 nm linewidth and increased narrowband spin-readout efficiency. Our findings demonstrate a new class of metasurfaces for spin-defect-based technologies and pave the way towards vdW-based nanophotonic devices with enhanced efficiency and sensitivity for quantum applications in imaging, sensing, and light emission.
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Affiliation(s)
- Luca Sortino
- Chair in Hybrid Nanosystems, Nanoinstitute Munich, Faculty of Physics, Ludwig-Maximilians-Universität München, 80539, Munich, Germany
| | - Angus Gale
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Lucca Kühner
- Chair in Hybrid Nanosystems, Nanoinstitute Munich, Faculty of Physics, Ludwig-Maximilians-Universität München, 80539, Munich, Germany
| | - Chi Li
- School of Physics and Astronomy, Monash University, Wellington Rd, Clayton, VIC 3800, Australia
| | - Jonas Biechteler
- Chair in Hybrid Nanosystems, Nanoinstitute Munich, Faculty of Physics, Ludwig-Maximilians-Universität München, 80539, Munich, Germany
| | - Fedja J Wendisch
- Chair in Hybrid Nanosystems, Nanoinstitute Munich, Faculty of Physics, Ludwig-Maximilians-Universität München, 80539, Munich, Germany
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Haoran Ren
- School of Physics and Astronomy, Monash University, Wellington Rd, Clayton, VIC 3800, Australia
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Stefan A Maier
- School of Physics and Astronomy, Monash University, Wellington Rd, Clayton, VIC 3800, Australia
- The Blackett Laboratory, Department of Physics, Imperial College London, London, SW7 2AZ, United Kingdom
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, NSW, 2007, Australia.
| | - Andreas Tittl
- Chair in Hybrid Nanosystems, Nanoinstitute Munich, Faculty of Physics, Ludwig-Maximilians-Universität München, 80539, Munich, Germany.
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3
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Murzakhanov FF, Sadovnikova MA, Gracheva IN, Mamin GV, Baibekov EI, Mokhov EN. Exploring the properties of theVB-defect in hBN: optical spin polarization, Rabi oscillations, and coherent nuclei modulation. NANOTECHNOLOGY 2024; 35:155001. [PMID: 38154127 DOI: 10.1088/1361-6528/ad1940] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Accepted: 12/27/2023] [Indexed: 12/30/2023]
Abstract
Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gapEg= 6 eV, containing a negatively charged boron vacancy (VB-) with unique spin, optical, and coherent properties presents a new two-dimensional platform for the implementation of quantum technologies. This work establishes the value ofVB-spin polarization under optical pumping withλext= 532 nm laser using high-frequency (νmw= 94 GHz) electron paramagnetic resonance (EPR) spectroscopy. In optimal conditions polarization was found to beP≈ 38.4%. Our study reveals that Rabi oscillations induced on polarized spin states persist for up to 30-40μs, which is nearly two orders of magnitude longer than what was previously reported. Analysis of the coherent electron-nuclear interaction through the observed electron spin echo envelope modulation made it possible to detect signals from remote nitrogen and boron nuclei, and to establish a corresponding quadrupole coupling constantCq= 180 kHz related to nuclear quadrupole moment of14N. These results have fundamental importance for understanding the spin properties of boron vacancy.
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Affiliation(s)
- Fadis F Murzakhanov
- Institute of Physics, Kazan Federal University, Kremlyovskaya 18, Kazan 420008, Russia
| | | | - Irina N Gracheva
- Institute of Physics, Kazan Federal University, Kremlyovskaya 18, Kazan 420008, Russia
| | - Georgy V Mamin
- Institute of Physics, Kazan Federal University, Kremlyovskaya 18, Kazan 420008, Russia
| | - Eduard I Baibekov
- Institute of Physics, Kazan Federal University, Kremlyovskaya 18, Kazan 420008, Russia
| | - Evgeniy N Mokhov
- Ioffe Institute, Polytekhnicheskaya, 26, St Petersburg 194021, Russia
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4
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Sarkar S, Xu Y, Mathew S, Lal M, Chung JY, Lee HY, Watanabe K, Taniguchi T, Venkatesan T, Gradečak S. Identifying Luminescent Boron Vacancies in h-BN Generated Using Controlled He + Ion Irradiation. NANO LETTERS 2024; 24:43-50. [PMID: 37930062 DOI: 10.1021/acs.nanolett.3c03113] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2023]
Abstract
The defect emission from h-BN at 1.55 eV is interesting as it enables optical readout of spins. It is necessary to identify the nature of the relevant point defects for its controlled introduction. However, it is challenging to engineer point defects in h-BN without changing the local atomic structure. Here, we controllably introduce boron vacancies in h-BN using an ultrahigh spatial resolution and low-energy He+ ion beam. By optimizing the He+ ion irradiation conditions, we control the quantity and location of defects spatially and along the depth of h-BN to achieve a robust photoluminescence emission at 1.55 eV from 10 K to room temperature. We show that as-generated defects activate an additional Raman mode at 1295 cm-1. Electron energy loss spectroscopy confirms introduction of boron vacancies without modification of the local h-BN crystal structure. Our results provide a deterministic strategy to create scalable boron vacancy emitters in h-BN for quantum photonics.
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Affiliation(s)
- Soumya Sarkar
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
| | - Yue Xu
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
| | - Sinu Mathew
- Department of Physics, S.B. College, Mahatma Gandhi University, Kerala 686101, India
| | - Manohar Lal
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
| | - Jing-Yang Chung
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
- Applied Materials - NUS Advanced Materials Corporate Lab, 5A Engineering Drive 1, Singapore 117411, Singapore
| | - Hae Yeon Lee
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02141, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Thirumalai Venkatesan
- Center for Quantum Research and Technology (CQRT), and Center of Optimal Materials for Emerging Technologies (COMET), University of Oklahoma, Norman, Oklahoma 73019, United States
| | - Silvija Gradečak
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
- Applied Materials - NUS Advanced Materials Corporate Lab, 5A Engineering Drive 1, Singapore 117411, Singapore
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5
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Zabelotsky T, Singh S, Haim G, Malkinson R, Kadkhodazadeh S, Radko IP, Aharonovich I, Steinberg H, Berg-Sørensen K, Huck A, Taniguchi T, Watanabe K, Bar-Gill N. Creation of Boron Vacancies in Hexagonal Boron Nitride Exfoliated from Bulk Crystals for Quantum Sensing. ACS APPLIED NANO MATERIALS 2023; 6:21671-21678. [PMID: 38835900 PMCID: PMC11145586 DOI: 10.1021/acsanm.3c03395] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/09/2023] [Revised: 11/01/2023] [Accepted: 11/05/2023] [Indexed: 06/06/2024]
Abstract
Boron vacancies (VB-) in hexagonal boron -nitride (hBN) have sparked great interest in recent years due to their optical and spin properties. Since hBN can be readily integrated into devices where it interfaces a huge variety of other 2D materials, boron vacancies may serve as a precise sensor which can be deployed at very close proximity to many important materials systems. Boron vacancy defects may be produced by a number of existing methods, the use of which may depend on the final application. Any method should reproducibly generate defects with controlled density and desired pattern. To date, however, detailed studies of such methods are missing. In this paper, we study various techniques for the preparation of hBN flakes from bulk crystals and relevant postprocessing treatments, namely, focused ion beam (FIB) implantation, for creation of VB-s as a function of flake thickness and defect concentrations. We find that flake thickness plays an important role when optimizing implantation parameters, while careful sample cleaning proved important to achieve consistent results.
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Affiliation(s)
- Ty Zabelotsky
- The
Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The
Institute of Applied Physics, The Hebrew
University of Jerusalem, Jerusalem 91904, Israel
| | - Sourabh Singh
- The
Racah Institute of Physics, The Hebrew University
of Jerusalem, Jerusalem 91904, Israel
| | - Galya Haim
- The
Institute of Applied Physics, The Hebrew
University of Jerusalem, Jerusalem 91904, Israel
- School
of Physics, The University of Melbourne, Parkville, Victoria 3010, Australia
| | - Rotem Malkinson
- The
Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The
Institute of Applied Physics, The Hebrew
University of Jerusalem, Jerusalem 91904, Israel
| | - Shima Kadkhodazadeh
- DTU
Nanolab, Technical University of Denmark, Fysikvej, Kongens, Lyngby, 2800, Denmark
| | - Ilya P. Radko
- Department
of Physics, Technical University of Denmark, Kongens, Lyngby, 2800, Denmark
| | - Igor Aharonovich
- School
of Mathematical and Physical Sciences, University
of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC
Centre of Excellence for Transformative Meta-Optical Systems (TMOS),
Faculty of Science, University of Technology
Sydney, Ultimo, New South Wales 2007, Australia
| | - Hadar Steinberg
- The
Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The
Racah Institute of Physics, The Hebrew University
of Jerusalem, Jerusalem 91904, Israel
| | - Kirstine Berg-Sørensen
- Department
of Health Technology, Technical University
of Denmark, Kongens, Lyngby 2800, Denmark
| | - Alexander Huck
- Center
for Macroscopic Quantum States (bigQ), Department of Physics, Technical University of Denmark, 2800 Kongens, Lyngby, Denmark
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Nir Bar-Gill
- The
Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The
Institute of Applied Physics, The Hebrew
University of Jerusalem, Jerusalem 91904, Israel
- The
Racah Institute of Physics, The Hebrew University
of Jerusalem, Jerusalem 91904, Israel
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6
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Badrtdinov DI, Rodriguez-Fernandez C, Grzeszczyk M, Qiu Z, Vaklinova K, Huang P, Hampel A, Watanabe K, Taniguchi T, Jiong L, Potemski M, Dreyer CE, Koperski M, Rösner M. Dielectric Environment Sensitivity of Carbon Centers in Hexagonal Boron Nitride. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300144. [PMID: 37329196 DOI: 10.1002/smll.202300144] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2023] [Revised: 06/01/2023] [Indexed: 06/18/2023]
Abstract
A key advantage of utilizing van-der-Waals (vdW) materials as defect-hosting platforms for quantum applications is the controllable proximity of the defect to the surface or the substrate allowing for improved light extraction, enhanced coupling with photonic elements, or more sensitive metrology. However, this aspect results in a significant challenge for defect identification and characterization, as the defect's properties depend on the the atomic environment. This study explores how the environment can influence the properties of carbon impurity centers in hexagonal boron nitride (hBN). It compares the optical and electronic properties of such defects between bulk-like and few-layer films, showing alteration of the zero-phonon line energies and their phonon sidebands, and enhancements of inhomogeneous broadenings. To disentangle the mechanisms responsible for these changes, including the atomic structure, electronic wavefunctions, and dielectric screening, it combines ab initio calculations with a quantum-embedding approach. By studying various carbon-based defects embedded in monolayer and bulk hBN, it demonstrates that the dominant effect of the change in the environment is the screening of density-density Coulomb interactions between the defect orbitals. The comparative analysis of experimental and theoretical findings paves the way for improved identification of defects in low-dimensional materials and the development of atomic scale sensors for dielectric environments.
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Affiliation(s)
- Danis I Badrtdinov
- Institute for Molecules and Materials, Radboud University, Heijendaalseweg 135, 6525, AJ Nijmegen, Netherlands
| | | | - Magdalena Grzeszczyk
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544
| | - Zhizhan Qiu
- Department of Chemistry, National University of Singapore, 117543, Singapore
| | - Kristina Vaklinova
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544
| | - Pengru Huang
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin, 541004, China
| | - Alexander Hampel
- Center for Computational Quantum Physics, Flatiron Institute, 162 5 th Avenue, New York, NY 10010, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Lu Jiong
- Department of Chemistry, National University of Singapore, 117543, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, Singapore, 117546, Singapore
| | - Marek Potemski
- Laboratoire National des Champs Magnétiques Intenses, CNRS-UGA-UPS-INSA-EMFL, 25 Av. des Martyrs, 38042, Grenoble, France
- CENTERA Labs, Institute of High Pressure Physics, PAS PL-01-142, Warsaw, Poland
- Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093, Warszawa, Poland
| | - Cyrus E Dreyer
- Center for Computational Quantum Physics, Flatiron Institute, 162 5 th Avenue, New York, NY 10010, USA
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York, 11794-3800, USA
| | - Maciej Koperski
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Malte Rösner
- Institute for Molecules and Materials, Radboud University, Heijendaalseweg 135, 6525, AJ Nijmegen, Netherlands
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7
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Zeng XD, Yang YZ, Guo NJ, Li ZP, Wang ZA, Xie LK, Yu S, Meng Y, Li Q, Xu JS, Liu W, Wang YT, Tang JS, Li CF, Guo GC. Reflective dielectric cavity enhanced emission from hexagonal boron nitride spin defect arrays. NANOSCALE 2023; 15:15000-15007. [PMID: 37665054 DOI: 10.1039/d3nr03486k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/05/2023]
Abstract
Among the various kinds of spin defects in hexagonal boron nitride (hBN), the negatively charged boron vacancy (VB-) spin defect that can be site-specifically generated is undoubtedly a potential candidate for quantum sensing, but its low quantum efficiency restricts its practical applications. Here, we demonstrate a robust enhancement structure called reflective dielectric cavity (RDC) with advantages including easy on-chip integration, convenient processing, low cost and suitable broad-spectrum enhancement for VB- defects. In the experiment, we used a metal reflective layer under the hBN flakes, filled with a transition dielectric layer in the middle, and adjusted the thickness of the dielectric layer to achieve the best coupling between RDC and spin defects in hBN. A remarkable 11-fold enhancement in the fluorescence intensity of VB- spin defects in hBN flakes can be achieved. By designing the metal layer into a waveguide structure, high-contrast optically detected magnetic resonance (ODMR) signal (∼21%) can be obtained. The oxide layer of the RDC can be used as the integrated material to implement secondary processing of micro-nano photonic devices, which means that it can be combined with other enhancement structures to achieve stronger enhancement. This work has guiding significance for realizing the on-chip integration of spin defects in two-dimensional materials.
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Affiliation(s)
- Xiao-Dong Zeng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yuan-Ze Yang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Nai-Jie Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhi-Peng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhao-An Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Lin-Ke Xie
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Shang Yu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yu Meng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Qiang Li
- Institute of Advanced Semiconductors and Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, China
- State Key Laboratory of Silicon Materials and Advanced Semiconductors and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
| | - Wei Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yi-Tao Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
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8
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Durand A, Clua-Provost T, Fabre F, Kumar P, Li J, Edgar JH, Udvarhelyi P, Gali A, Marie X, Robert C, Gérard JM, Gil B, Cassabois G, Jacques V. Optically Active Spin Defects in Few-Layer Thick Hexagonal Boron Nitride. PHYSICAL REVIEW LETTERS 2023; 131:116902. [PMID: 37774304 DOI: 10.1103/physrevlett.131.116902] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Accepted: 08/22/2023] [Indexed: 10/01/2023]
Abstract
Optically active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to the sample being probed. In this Letter, we first demonstrate that the electron spin resonance frequencies of boron vacancy centers (V_{B}^{-}) can be detected optically in the limit of few-atomic-layer thick hBN flakes despite the nanoscale proximity of the crystal surface that often leads to a degradation of the stability of solid-state spin defects. We then analyze the variations of the electronic spin properties of V_{B}^{-} centers with the hBN thickness with a focus on (i) the zero-field splitting parameters, (ii) the optically induced spin polarization rate and (iii) the longitudinal spin relaxation time. This Letter provides important insights into the properties of V_{B}^{-} centers embedded in ultrathin hBN flakes, which are valuable for future developments of foil-based quantum sensing technologies.
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Affiliation(s)
- A Durand
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - T Clua-Provost
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - F Fabre
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - P Kumar
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - J Li
- Tim Taylor Department of Chemical Engineering, Kansas State University, Kansas 66506, USA
| | - J H Edgar
- Tim Taylor Department of Chemical Engineering, Kansas State University, Kansas 66506, USA
| | - P Udvarhelyi
- Department of Atomic Physics, Budapest University of Technology and Economics, H-1111 Budapest, Hungary
| | - A Gali
- Department of Atomic Physics, Budapest University of Technology and Economics, H-1111 Budapest, Hungary
- Wigner Research Centre for Physics, P.O. Box 49, H-1525 Budapest, Hungary
| | - X Marie
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - C Robert
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
| | - J M Gérard
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - B Gil
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - G Cassabois
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - V Jacques
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
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9
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Robertson IO, Scholten SC, Singh P, Healey AJ, Meneses F, Reineck P, Abe H, Ohshima T, Kianinia M, Aharonovich I, Tetienne JP. Detection of Paramagnetic Spins with an Ultrathin van der Waals Quantum Sensor. ACS NANO 2023. [PMID: 37406158 DOI: 10.1021/acsnano.3c01678] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/07/2023]
Abstract
Detecting magnetic noise from small quantities of paramagnetic spins is a powerful capability for chemical, biochemical, and medical analysis. Quantum sensors based on optically addressable spin defects in bulk semiconductors are typically employed for such purposes, but the 3D crystal structure of the sensor inhibits sensitivity by limiting the proximity of the defects to the target spins. Here we demonstrate the detection of paramagnetic spins using spin defects hosted in hexagonal boron nitride (hBN), a van der Waals material that can be exfoliated into the 2D regime. We first create negatively charged boron vacancy (VB-) defects in a powder of ultrathin hBN nanoflakes (<10 atomic monolayers thick on average) and measure the longitudinal spin relaxation time (T1) of this system. We then decorate the dry hBN nanopowder with paramagnetic Gd3+ ions and observe a clear T1 quenching under ambient conditions, consistent with the added magnetic noise. Finally, we demonstrate the possibility of performing spin measurements, including T1 relaxometry using solution-suspended hBN nanopowder. Our results highlight the potential and versatility of the hBN quantum sensor for a range of sensing applications and make steps toward the realization of a truly 2D, ultrasensitive quantum sensor.
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Affiliation(s)
- Islay O Robertson
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Sam C Scholten
- School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Priya Singh
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Alexander J Healey
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
- School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Fernando Meneses
- School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Philipp Reineck
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
- ARC Centre of Excellence for Nanoscale BioPhotonics, RMIT University, Melbourne, Victoria 3001, Australia
| | - Hiroshi Abe
- National Institutes for Quantum Science and Technology (QST), 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
| | - Takeshi Ohshima
- National Institutes for Quantum Science and Technology (QST), 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
- Department of Materials Science, Tohoku University, Sendai, 980-8579, Japan
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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10
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Guo NJ, Li S, Liu W, Yang YZ, Zeng XD, Yu S, Meng Y, Li ZP, Wang ZA, Xie LK, Ge RC, Wang JF, Li Q, Xu JS, Wang YT, Tang JS, Gali A, Li CF, Guo GC. Coherent control of an ultrabright single spin in hexagonal boron nitride at room temperature. Nat Commun 2023; 14:2893. [PMID: 37210408 DOI: 10.1038/s41467-023-38672-6] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2022] [Accepted: 05/10/2023] [Indexed: 05/22/2023] Open
Abstract
Hexagonal boron nitride (hBN) is a remarkable two-dimensional (2D) material that hosts solid-state spins and has great potential to be used in quantum information applications, including quantum networks. However, in this application, both the optical and spin properties are crucial for single spins but have not yet been discovered simultaneously for hBN spins. Here, we realize an efficient method for arraying and isolating the single defects of hBN and use this method to discover a new spin defect with a high probability of 85%. This single defect exhibits outstanding optical properties and an optically controllable spin, as indicated by the observed significant Rabi oscillation and Hahn echo experiments at room temperature. First principles calculations indicate that complexes of carbon and oxygen dopants may be the origin of the single spin defects. This provides a possibility for further addressing spins that can be optically controlled.
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Affiliation(s)
- Nai-Jie Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Song Li
- Wigner Research Centre for Physics, Post Office Box 49, H-1525Budapest, Hungary
| | - Wei Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Yuan-Ze Yang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Xiao-Dong Zeng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Shang Yu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Yu Meng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Zhi-Peng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Zhao-An Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Lin-Ke Xie
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Rong-Chun Ge
- College of Physics, Sichuan University, Chengdu, 610064, China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
- College of Physics, Sichuan University, Chengdu, 610064, China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Yi-Tao Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China.
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China.
| | - Adam Gali
- Wigner Research Centre for Physics, Post Office Box 49, H-1525Budapest, Hungary.
- Department of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, Muegyetem rakpart 3, H-1111Budapest, Hungary.
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China.
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
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11
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Cai H, Ru S, Jiang Z, Eng JJH, He R, Li FL, Miao Y, Zúñiga-Pérez J, Gao W. Spin Defects in hBN assisted by Metallic Nanotrenches for Quantum Sensing. NANO LETTERS 2023. [PMID: 37205843 DOI: 10.1021/acs.nanolett.3c00849] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
The omnipresence of hexagonal boron nitride (hBN) in devices embedding two-dimensional materials has prompted it as the most sought after platform to implement quantum sensing due to its testing while operating capability. The negatively charged boron vacancy (VB-) in hBN plays a prominent role, as it can be easily generated while its spin population can be initialized and read out by optical means at room-temperature. But the lower quantum yield hinders its widespread use as an integrated quantum sensor. Here, we demonstrate an emission enhancement amounting to 400 by nanotrench arrays compatible with coplanar waveguide (CPW) electrodes employed for spin-state detection. By monitoring the reflectance spectrum of the resonators as additional layers of hBN are transferred, we have optimized the overall hBN/nanotrench optical response, maximizing thereby the luminescence enhancement. Based on these finely tuned heterostructures, we achieved an enhanced DC magnetic field sensitivity as high as 6 × 10-5 T/Hz1/2.
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Affiliation(s)
- Hongbing Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371, Singapore
| | - Shihao Ru
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- School of Physics, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zhengzhi Jiang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - John Jun Hong Eng
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore
| | - Ruihua He
- School of Biological Sciences, Nanyang Technological University, Singapore 637551, Singapore
| | - Fu-Li Li
- School of Physics, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yansong Miao
- School of Biological Sciences, Nanyang Technological University, Singapore 637551, Singapore
| | - Jesús Zúñiga-Pérez
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- MajuLab, International Research Laboratory IRL 3654, CNRS, Université Côte d'Azur, Sorbonne Université, National University of Singapore, Nanyang Technological University, Singapore 637551, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371, Singapore
- MajuLab, International Research Laboratory IRL 3654, CNRS, Université Côte d'Azur, Sorbonne Université, National University of Singapore, Nanyang Technological University, Singapore 637551, Singapore
- Centre for Quantum Technologies, National University of Singapore, Singapore 117543, Singapore
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12
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Coherence protection of spin qubits in hexagonal boron nitride. Nat Commun 2023; 14:461. [PMID: 36709208 PMCID: PMC9884286 DOI: 10.1038/s41467-023-36196-7] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2022] [Accepted: 01/17/2023] [Indexed: 01/29/2023] Open
Abstract
Spin defects in foils of hexagonal boron nitride are an attractive platform for magnetic field imaging, since the probe can be placed in close proximity to the target. However, as a III-V material the electron spin coherence is limited by the nuclear spin environment, with spin echo coherence times of ∽100 ns at room temperature accessible magnetic fields. We use a strong continuous microwave drive with a modulation in order to stabilize a Rabi oscillation, extending the coherence time up to ∽ 4μs, which is close to the 10 μs electron spin lifetime in our sample. We then define a protected qubit basis, and show full control of the protected qubit. The coherence times of a superposition of the protected qubit can be as high as 0.8 μs. This work establishes that boron vacancies in hexagonal boron nitride can have electron spin coherence times that are competitive with typical nitrogen vacancy centres in small nanodiamonds under ambient conditions.
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13
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Xu X, Solanki AB, Sychev D, Gao X, Peana S, Baburin AS, Pagadala K, Martin ZO, Chowdhury SN, Chen YP, Taniguchi T, Watanabe K, Rodionov IA, Kildishev AV, Li T, Upadhyaya P, Boltasseva A, Shalaev VM. Greatly Enhanced Emission from Spin Defects in Hexagonal Boron Nitride Enabled by a Low-Loss Plasmonic Nanocavity. NANO LETTERS 2023; 23:25-33. [PMID: 36383034 DOI: 10.1021/acs.nanolett.2c03100] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The negatively charged boron vacancy (VB-) defect in hexagonal boron nitride (hBN) with optically addressable spin states has emerged due to its potential use in quantum sensing. Remarkably, VB- preserves its spin coherence when it is implanted at nanometer-scale distances from the hBN surface, potentially enabling ultrathin quantum sensors. However, its low quantum efficiency hinders its practical applications. Studies have reported improving the overall quantum efficiency of VB- defects with plasmonics; however, the overall enhancements of up to 17 times reported to date are relatively modest. Here, we demonstrate much higher emission enhancements of VB- with low-loss nanopatch antennas (NPAs). An overall intensity enhancement of up to 250 times is observed, corresponding to an actual emission enhancement of ∼1685 times by the NPA, along with preserved optically detected magnetic resonance contrast. Our results establish NPA-coupled VB- defects as high-resolution magnetic field sensors and provide a promising approach to obtaining single VB- defects.
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Affiliation(s)
- Xiaohui Xu
- School of Materials Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
| | - Abhishek B Solanki
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Demid Sychev
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana47907, United States
| | - Samuel Peana
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Aleksandr S Baburin
- FMN Laboratory, Bauman Moscow State Technical University, Moscow105005, Russia
- Dukhov Automatics Research Institute (VNIIA), Moscow127055, Russia
| | - Karthik Pagadala
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Zachariah O Martin
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Sarah N Chowdhury
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Yong P Chen
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
- Institute of Physics and Astronomy and Villum Center for Hybrid Quantum Materials and Devices, Aarhus University, 8000Aarhus-C, Denmark
- WPI-AIMR International Research Center for Materials Sciences, Tohoku University, Sendai980-8577, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
| | - Ilya A Rodionov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow105005, Russia
- Dukhov Automatics Research Institute (VNIIA), Moscow127055, Russia
| | - Alexander V Kildishev
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
| | - Tongcang Li
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
| | - Pramey Upadhyaya
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Alexandra Boltasseva
- School of Materials Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Vladimir M Shalaev
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
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14
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Aharonovich I, Tetienne JP, Toth M. Quantum Emitters in Hexagonal Boron Nitride. NANO LETTERS 2022; 22:9227-9235. [PMID: 36413674 DOI: 10.1021/acs.nanolett.2c03743] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Hexagonal boron nitride (hBN) has emerged as a fascinating platform to explore quantum emitters and their applications. Beyond being a wide-bandgap material, it is also a van der Waals crystal, enabling direct exfoliation of atomically thin layers─a combination which offers unique advantages over bulk, 3D crystals. In this Mini Review we discuss the unique properties of hBN quantum emitters and highlight progress toward their future implementation in practical devices. We focus on engineering and integration of the emitters with scalable photonic resonators. We also highlight recently discovered spin defects in hBN and discuss their potential utility for quantum sensing. All in all, hBN has become a front runner in explorations of solid-state quantum science with promising future prospects.
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Affiliation(s)
- Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | | | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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15
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Nonahal M, Li C, Tjiptoharsono F, Ding L, Stewart C, Scott J, Toth M, Ha ST, Kianinia M, Aharonovich I. Coupling spin defects in hexagonal boron nitride to titanium dioxide ring resonators. NANOSCALE 2022; 14:14950-14955. [PMID: 36069362 DOI: 10.1039/d2nr02522a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Spin-dependent optical transitions are attractive for a plethora of applications in quantum technologies. Here we report on utilization of high quality ring resonators fabricated from TiO2 to enhance the emission from negatively charged boron vacancies (VB-) in hexagonal Boron Nitride. We show that the emission from these defects can efficiently couple into the whispering gallery modes of the ring resonators. Optically coupled VB- showed photoluminescence contrast in optically detected magnetic resonance signals from the hybrid coupled devices. Our results demonstrate a practical method for integration of spin defects in 2D materials with dielectric resonators which is a promising platform for quantum technologies.
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Affiliation(s)
- Milad Nonahal
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - Chi Li
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Febiana Tjiptoharsono
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Kinesis, 138635 Singapore
| | - Lu Ding
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Kinesis, 138635 Singapore
| | - Connor Stewart
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - John Scott
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Milos Toth
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Son Tung Ha
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Kinesis, 138635 Singapore
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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16
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Huang M, Zhou J, Chen D, Lu H, McLaughlin NJ, Li S, Alghamdi M, Djugba D, Shi J, Wang H, Du CR. Wide field imaging of van der Waals ferromagnet Fe3GeTe2 by spin defects in hexagonal boron nitride. Nat Commun 2022; 13:5369. [PMID: 36100604 PMCID: PMC9470674 DOI: 10.1038/s41467-022-33016-2] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/27/2021] [Accepted: 08/26/2022] [Indexed: 11/26/2022] Open
Abstract
Emergent color centers with accessible spins hosted by van der Waals materials have attracted substantial interest in recent years due to their significant potential for implementing transformative quantum sensing technologies. Hexagonal boron nitride (hBN) is naturally relevant in this context due to its remarkable ease of integration into devices consisting of low-dimensional materials. Taking advantage of boron vacancy spin defects in hBN, we report nanoscale quantum imaging of low-dimensional ferromagnetism sustained in Fe3GeTe2/hBN van der Waals heterostructures. Exploiting spin relaxometry methods, we have further observed spatially varying magnetic fluctuations in the exfoliated Fe3GeTe2 flake, whose magnitude reaches a peak value around the Curie temperature. Our results demonstrate the capability of spin defects in hBN of investigating local magnetic properties of layered materials in an accessible and precise way, which can be extended readily to a broad range of miniaturized van der Waals heterostructure systems. Hexagonal boron nitride (h-BN) has been used extensively to encapsulate other van der Waals materials, protecting them from environmental degradation, and allowing integration into more complex heterostructures. Here, the authors make use of boron vacancy spin defects in h-BN using them to image the magnetic properties of a Fe3GeTe2 flake.
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17
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Gao X, Vaidya S, Li K, Ju P, Jiang B, Xu Z, Allcca AEL, Shen K, Taniguchi T, Watanabe K, Bhave SA, Chen YP, Ping Y, Li T. Nuclear spin polarization and control in hexagonal boron nitride. NATURE MATERIALS 2022; 21:1024-1028. [PMID: 35970964 DOI: 10.1038/s41563-022-01329-8] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2022] [Accepted: 07/07/2022] [Indexed: 06/15/2023]
Abstract
Electron spins in van der Waals materials are playing a crucial role in recent advances in condensed-matter physics and spintronics. However, nuclear spins in van der Waals materials remain an unexplored quantum resource. Here we report optical polarization and coherent control of nuclear spins in a van der Waals material at room temperature. We use negatively charged boron vacancy ([Formula: see text]) spin defects in hexagonal boron nitride to polarize nearby nitrogen nuclear spins. We observe the Rabi frequency of nuclear spins at the excited-state level anti-crossing of [Formula: see text] defects to be 350 times larger than that of an isolated nucleus, and demonstrate fast coherent control of nuclear spins. Further, we detect strong electron-mediated nuclear-nuclear spin coupling that is five orders of magnitude larger than the direct nuclear-spin dipolar coupling, enabling multi-qubit operations. Our work opens new avenues for the manipulation of nuclear spins in van der Waals materials for quantum information science and technology.
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Affiliation(s)
- Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | - Sumukh Vaidya
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | - Kejun Li
- Department of Physics, University of California, Santa Cruz, CA, USA
| | - Peng Ju
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | - Boyang Jiang
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA
| | - Zhujing Xu
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | | | - Kunhong Shen
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Sunil A Bhave
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
| | - Yong P Chen
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
- WPI-AIMR International Research Center for Materials Sciences, Tohoku University, Sendai, Japan
| | - Yuan Ping
- Department of Chemistry and Biochemistry, University of California, Santa Cruz, CA, USA
| | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA.
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA.
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA.
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA.
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18
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Lyu X, Tan Q, Wu L, Zhang C, Zhang Z, Mu Z, Zúñiga-Pérez J, Cai H, Gao W. Strain Quantum Sensing with Spin Defects in Hexagonal Boron Nitride. NANO LETTERS 2022; 22:6553-6559. [PMID: 35960708 DOI: 10.1021/acs.nanolett.2c01722] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Hexagonal boron nitride is not only a promising functional material for the development of two-dimensional optoelectronic devices but also a good candidate for quantum sensing thanks to the presence of quantum emitters in the form of atom-like defects. Their exploitation in quantum technologies necessitates understanding their coherence properties as well as their sensitivity to external stimuli. In this work, we probe the strain configuration of boron vacancy centers (VB-) created by ion implantation in h-BN flakes thanks to wide-field spatially resolved optically detected magnetic resonance and submicro Raman spectroscopy. Our experiments demonstrate the ability of VB- for quantum sensing of strain and, given the omnipresence of h-BN in 2D-based devices, open the door for in situ imaging of strain under working conditions.
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Affiliation(s)
- Xiaodan Lyu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, 637371, Singapore
| | - Qinghai Tan
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Lishu Wu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Chusheng Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Zhaowei Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Zhao Mu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Jesús Zúñiga-Pérez
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
- MajuLab, International Research Laboratory IRL 3654, CNRS, Université Côte d'Azur, Sorbonne Université, National University of Singapore, Nanyang Technological University, 637371, Singapore
| | - Hongbing Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, 637371, Singapore
- Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, 117543, Singapore
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19
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Qian C, Villafañe V, Schalk M, Astakhov GV, Kentsch U, Helm M, Soubelet P, Wilson NP, Rizzato R, Mohr S, Holleitner AW, Bucher DB, Stier AV, Finley JJ. Unveiling the Zero-Phonon Line of the Boron Vacancy Center by Cavity-Enhanced Emission. NANO LETTERS 2022; 22:5137-5142. [PMID: 35758596 DOI: 10.1021/acs.nanolett.2c00739] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Negatively charged boron vacancies (VB-) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of electronic states. As such, the direct measurement of the zero-phonon line (ZPL) of VB- has remained elusive. Here, we measure the room-temperature ZPL wavelength to be 773 ± 2 nm by coupling the hBN layer to the high-Q nanobeam cavity. As the wavelength of cavity mode is tuned, we observe a pronounced intensity resonance, indicating the coupling to VB-. Our observations are consistent with the spatial redistribution of VB- emission. Spatially resolved measurements show a clear Purcell effect maximum at the midpoint of the nanobeam, in accord with the optical field distribution of the cavity mode. Our results are in good agreement with theoretical calculations, opening the way to using VB- as cavity spin-photon interfaces.
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Affiliation(s)
- Chenjiang Qian
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Viviana Villafañe
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Martin Schalk
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - G V Astakhov
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany
| | - Ulrich Kentsch
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany
| | - Manfred Helm
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany
| | - Pedro Soubelet
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Nathan P Wilson
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Roberto Rizzato
- Department of Chemistry, Technical University of Munich, Lichtenbergstrasse 4, Garching 85748, Germany
| | - Stephan Mohr
- Department of Chemistry, Technical University of Munich, Lichtenbergstrasse 4, Garching 85748, Germany
| | - Alexander W Holleitner
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Dominik B Bucher
- Department of Chemistry, Technical University of Munich, Lichtenbergstrasse 4, Garching 85748, Germany
| | - Andreas V Stier
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Jonathan J Finley
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
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20
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Murzakhanov FF, Mamin GV, Orlinskii SB, Gerstmann U, Schmidt WG, Biktagirov T, Aharonovich I, Gottscholl A, Sperlich A, Dyakonov V, Soltamov VA. Electron-Nuclear Coherent Coupling and Nuclear Spin Readout through Optically Polarized V B- Spin States in hBN. NANO LETTERS 2022; 22:2718-2724. [PMID: 35357842 DOI: 10.1021/acs.nanolett.1c04610] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Coherent coupling of defect spins with surrounding nuclei along with the endowment to read out the latter are basic requirements for an application in quantum technologies. We show that negatively charged boron vacancies (VB-) in hexagonal boron nitride (hBN) meet these prerequisites. We demonstrate Hahn-echo coherence of the VB- spin with a characteristic decay time Tcoh = 15 μs, close to the theoretically predicted limit of 18 μs for defects in hBN. Elongation of the coherence time up to 36 μs is demonstrated by means of the Carr-Purcell-Meiboom-Gill decoupling technique. Modulation of the Hahn-echo decay is shown to be induced by coherent coupling of the VB- spin with the three nearest 14N nuclei via a nuclear quadrupole interaction of 2.11 MHz. DFT calculation confirms that the electron-nuclear coupling is confined to the defective layer and stays almost unchanged with a transition from the bulk to the single layer.
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Affiliation(s)
| | | | | | - Uwe Gerstmann
- Theoretische Materialphysik, Universität Paderborn, 33098 Paderborn, Germany
| | - Wolf Gero Schmidt
- Theoretische Materialphysik, Universität Paderborn, 33098 Paderborn, Germany
| | - Timur Biktagirov
- Theoretische Materialphysik, Universität Paderborn, 33098 Paderborn, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Andreas Gottscholl
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Andreas Sperlich
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Vladimir Dyakonov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
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21
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Yang T, Mendelson N, Li C, Gottscholl A, Scott J, Kianinia M, Dyakonov V, Toth M, Aharonovich I. Spin defects in hexagonal boron nitride for strain sensing on nanopillar arrays. NANOSCALE 2022; 14:5239-5244. [PMID: 35315850 DOI: 10.1039/d1nr07919k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional hexagonal boron nitride (hBN) has attracted much attention as a platform for studies of light-matter interactions at the nanoscale, especially in quantum nanophotonics. Recent efforts have focused on spin defects, specifically negatively charged boron vacancy (VB-) centers. Here, we demonstrate a scalable method to enhance the VB- emission using an array of SiO2 nanopillars. We achieve a 4-fold increase in photoluminescence (PL) intensity, and a corresponding 4-fold enhancement in optically detected magnetic resonance (ODMR) contrast. Furthermore, the VB- ensembles provide useful information about the strain fields associated with the strained hBN at the nanopillar sites. Our results provide an accessible way to increase the emission intensity as well as the ODMR contrast of the VB- defects, while simultaneously form a basis for miniaturized quantum sensors in layered heterostructures.
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Affiliation(s)
- Tieshan Yang
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Noah Mendelson
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - Chi Li
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - Andreas Gottscholl
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - John Scott
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - Vladimir Dyakonov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - Milos Toth
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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