Exploring the effect of band alignment and surface states on photoinduced electron transfer from CuInS2/CdS core/shell quantum dots to TiO2 electrodes

Photoexcited Carrier Transfer in CuInS2 Nanocrystal Assembly by Suppressing Resonant-Energy Transfer

High-density assemblies or superlattice structures composed of colloidal semiconductor nanocrystals have attracted attention as key materials for next-generation photoelectric conversion devices such as quantum-dot solar cells. In these nanocrystal solids, unique transport and optical phenomena occur due to quantum coupling of localized energy states, charge-carrier hopping, and electromagnetic interactions among closely arranged nanocrystals. In particular, the photoexcited carrier dynamics in nanocrystal solids is important because it significantly affects various device parameters. In this study, we report the photoexcited carrier dynamics in a solid film of CuInS2 nanocrystals, which is one of the potential nontoxic substitutes with Cd- and Pb-free compositions. Meanwhile, these subjects have been extensively studied in nanocrystal solids formed by CdSe and PbS systems. A carrier-hopping mechanism was confirmed using temperature-dependent photoluminescence spectroscopy, which yielded a typical value of the photoexcited carrier-transfer rate of (2.2±0.6)×107  s-1 by suppressing the influence of the excitation-energy transfer.

Manipulating the Optoelectronic Properties of Quasi-type II CuInS2/CdS Core/Shell Quantum Dots for Photoelectrochemical Cell Applications

Colloidal core/shell heterostructured quantum dots (QDs) possessing quasi-type II band structure have demonstrated effective surface passivation and prolonged exciton lifetime, leading to enhanced charge separation/transfer efficiencies that are promising for photovoltaic device applications. Herein, we synthesized CuInS₂ (CIS)/CdS core/shell heterostructured QDs and manipulated the optoelectronic properties via controlling the CdS shell thickness. The shell-thickness-dependent optical properties indicate the existence of a quasi-type II band structure in such core/shell QDs, which was verified by ultrafast spectroscopy and theoretical simulations. These quasi-type II core/shell QDs having various shell thicknesses are used as light absorbers for the fabrication of solar-driven QDs-based photoelectrochemical (PEC) devices, exhibiting an optimized photocurrent density of ∼6.0 mA/cm² and excellent stability under simulated AM 1.5G solar illumination. The results demonstrate that quasi-type II CIS/CdS core/shell heterostructured QDs with tailored optoelectronic properties are promising to realize high-performance QDs-based solar energy conversion devices for the production of solar fuels.

Enhancing the Performance of Quantum Dot Light-Emitting Diodes Using Room-Temperature-Processed Ga-Doped ZnO Nanoparticles as the Electron Transport Layer

Colloidal ZnO nanoparticle (NP) films are recognized as efficient electron transport layers (ETLs) for quantum dot light-emitting diodes (QD-LEDs) with good stability and high efficiency. However, because of the inherently high work function of such films, spontaneous charge transfer occurs at the QD/ZnO interface in such a QD-LED, thus leading to reduced performance. Here, to improve the QD-LED performance, we prepared Ga-doped ZnO NPs with low work functions and tailored band structures via a room-temperature (RT) solution process without the use of bulky organic ligands. We found that the charge transfer at the interface between the CdSe/ZnS QDs and the doped ZnO NPs was significantly weakened because of the incorporated Ga dopants. Remarkably, the as-assembled QD-LEDs, with Ga-doped ZnO NPs as the ETLs, exhibited superior luminances of up to 44 000 cd/m² and efficiencies of up to 15 cd/A, placing them among the most efficient red-light QD-LEDs ever reported. This discovery provides a new strategy for fabricating high-performance QD-LEDs by using RT-processed Ga-doped ZnO NPs as the ETLs, which could be generalized to improve the efficiency of other optoelectronic devices.

Compound Copper Chalcogenide Nanocrystals

This review captures the synthesis, assembly, properties, and applications of copper chalcogenide NCs, which have achieved significant research interest in the last decade due to their compositional and structural versatility. The outstanding functional properties of these materials stems from the relationship between their band structure and defect concentration, including charge carrier concentration and electronic conductivity character, which consequently affects their optoelectronic, optical, and plasmonic properties. This, combined with several metastable crystal phases and stoichiometries and the low energy of formation of defects, makes the reproducible synthesis of these materials, with tunable parameters, remarkable. Further to this, the review captures the progress of the hierarchical assembly of these NCs, which bridges the link between their discrete and collective properties. Their ubiquitous application set has cross-cut energy conversion (photovoltaics, photocatalysis, thermoelectrics), energy storage (lithium-ion batteries, hydrogen generation), emissive materials (plasmonics, LEDs, biolabelling), sensors (electrochemical, biochemical), biomedical devices (magnetic resonance imaging, X-ray computer tomography), and medical therapies (photochemothermal therapies, immunotherapy, radiotherapy, and drug delivery). The confluence of advances in the synthesis, assembly, and application of these NCs in the past decade has the potential to significantly impact society, both economically and environmentally.

Engineered band structure for an enhanced performance on quantum dot-sensitized solar cells

A photon-to-current efficiency of 2.93% is received for the Mn-doped CdS (MCdS)-quantum dot sensitized solar cells (QDSSCs) using Mn:ZnO (MZnO) nanowire as photoanode. Hydrothermal synthesized MZnO are spin-coated on fluorine doped tin oxide (FTO) glass with P25 paste to serve as photoanode after calcinations. MCdS was deposited on the MZnO film by the successive ionic layer adsorption and reaction method. The long lived excitation energy state of Mn2+ is located inside the conduction band in the wide bandgap ZnO and under the conduction band of CdS, which increases the energetic overlap of donor and acceptor states, reducing the “loss-in-potential,” inhibiting charge recombination, and accelerating electron injection. The engineered band structure is well reflected by the electrochemical band detected using cyclic voltammetry. Cell performances are evidenced by current density-voltage (J-V) traces, diffuse reflectance spectra, transient PL spectroscopy, and incident photon to current conversion efficiency characterizations. Further coating of CdSe on MZnO/MCdS electrode expands the light absorption band of the sensitizer, an efficiency of 4.94% is received for QDSSCs.

Quasi-type II CuInS2/CdS core/shell quantum dots

Ternary chalcopyrite CuInS2 quantum dots (QDs) have been extensively studied in recent years as an alternative to conventional QDs for solar energy conversion applications. However, compared with the well-established photophysics in prototypical CdSe QDs, much less is known about the excited properties of CuInS2 QDs. In this work, using ultrafast spectroscopy, we showed that both conduction band (CB) edge electrons and copper vacancy (VCu) localized holes were susceptible to surface trappings in CuInS2 QDs. These trap states could be effectively passivated by forming quasi-type II CuInS2/CdS core/shell QDs, leading to a single-exciton (with electrons delocalized among CuInS2/CdS CB and holes localized in VCu) half lifetime of as long as 450 ns. Because of reduced electron-hole overlap in quasi-type II QDs, Auger recombination of multiple excitons was also suppressed and the bi-exciton lifetime was prolonged to 42 ps in CuInS2/CdS QDs from 10 ps in CuInS2 QDs. These demonstrated advantages, including passivated trap states, long single and multiple exciton lifetimes, suggest that quasi-type II CuInS2/CdS QDs are promising materials for photovoltaic and photocatalytic applications.

A facile method for the synthesis of CuInS2–ZnS quantum dots with tunable photoluminescent properties

CuInS₂/CuInS₂–ZnS quantum dots showed excellent tunable photoluminescent properties, which demonstrate great potential for practical applications due to their non-toxicity and excellent optical properties.

Non-stoichiometric Cu–In–S@ZnS nanoparticles produced in aqueous solutions as light harvesters for liquid-junction photoelectrochemical solar cells

A direct “green” aqueous synthesis of mercapto acetate-stabilized copper indium sulfide (CIS) nanoparticles (NPs) and core/shell CIS@ZnS NPs of a varied composition under ambient conditions and a temperature lower than 100 °C is reported.

Fabrication and photoelectrochemical characteristics of CuInS2 and PbS quantum dot co-sensitized TiO2 nanorod photoelectrodes

A cascade structured PbS/CuInS₂/TiO₂ photoelectrode with co-sensitization effect obtains the energy conversion efficiency of 4.11% under one sun illumination.

Efficient white light emitting diodes based on Cu-doped ZnInS/ZnS core/shell quantum dots

We report the fabrication of efficient white light-emitting diodes (WLEDs) based on Cu : ZnInS/ZnS core/shell quantum dots (QDs) with super large Stokes shifts. The composition-controllable Cu : ZnInS/ZnS QDs with a tunable emission from deep red to green were prepared by a one-pot noninjection synthetic approach. The high performance Cu : ZnInS QD-WLEDs with the colour rendering index up to 96, luminous efficacy of 70-78 lm W(-1), and colour temperature of 3800-5760 K were successfully fabricated by integration of red and green Cu-doped QDs. Negligible energy transfer between Cu-doped QDs was clearly found by measuring the photoluminescence lifetimes of the QDs, consistent with the small spectral overlap between QD emission and absorption. The experimental results indicated low toxic Cu : ZnInS/ZnS QDs could be suitable for solid state lighting.

Diffuse axonal injury after traumatic cerebral microbleeds: an evaluation of imaging techniques

Previous neuropathological studies regarding traumatic brain injury have primarily focused on changes in large structures, for example, the clinical prognosis after cerebral contusion, intracerebral hematoma, and epidural and subdural hematoma. In fact, many smaller injuries can also lead to severe neurological disorders. For example, cerebral microbleeds result in the dysfunction of adjacent neurons and the disassociation between cortex and subcortical structures. These tiny changes cannot be adequately visualized on CT or conventional MRI. In contrast, gradient echo sequence-based susceptibility-weighted imaging is very sensitive to blood metabolites and microbleeds, and can be used to evaluate traumatic cerebral microbleeds with high sensitivity and accuracy. Cerebral microbleed can be considered as an important imaging marker for diffuse axonal injury with potential relevance for prognosis. For this reason, based on experimental and clinical studies, this study reviews the role of imaging data showing traumatic cerebral microbleeds in the evaluation of cerebral neuronal injury and neurofunctional loss.

Ultrafast carrier trapping of a metal-doped titanium dioxide semiconductor revealed by femtosecond transient absorption spectroscopy

We explored for the first time the ultrafast carrier trapping of a metal-doped titanium dioxide (TiO2) semiconductor using broad-band transient absorption (TA) spectroscopy with 120 fs temporal resolution. Titanium dioxide was successfully doped layer-by-layer with two metal ions, namely tungsten and cobalt. The time-resolved data demonstrate clearly that the carrier trapping time decreases progressively as the doping concentration increases. A global-fitting procedure for the carrier trapping suggests the appearance of two time components: a fast one that is directly associated with carrier trapping to the defect state in the vicinity of the conduction band and a slow one that is attributed to carrier trapping to the deep-level state from the conduction band. With a relatively long doping deposition time on the order of 30 s, a carrier lifetime of about 1 ps is obtained. To confirm that the measured ultrafast carrier dynamics are associated with electron trapping by metal doping, we explored the carrier dynamics of undoped TiO2. The findings reported here may be useful for the implementation of high-speed optoelectronic applications and fast switching devices.