Third generation photovoltaics based on multiple exciton generation in quantum confined semiconductors

Advancing Silver Bismuth Sulfide Quantum Dots for Practical Solar Cell Applications

Colloidal quantum dots (CQDs) show unique properties that distinguish them from their bulk form, the so-called quantum confinement effects. This feature manifests in tunable size-dependent band gaps and discrete energy levels, resulting in distinct optical and electronic properties. The investigation direction of colloidal quantum dots (CQDs) materials has started switching from high-performing materials based on Pb and Cd, which raise concerns regarding their toxicity, to more environmentally friendly compounds, such as AgBiS2. After the first breakthrough in solar cell application in 2016, the development of AgBiS2 QDs has been relatively slow, and many of the fundamental physical and chemical properties of this material are still unknown. Investigating the growth of AgBiS2 QDs is essential to understanding the fundamental properties that can improve this material's performance. This review comprehensively summarizes the synthesis strategies, ligand choice, and solar cell fabrication of AgBiS2 QDs. The development of PbS QDs is also highlighted as the foundation for improving the quality and performance of AgBiS2 QD. Furthermore, we prospectively discuss the future direction of AgBiS2 QD and its use for solar cell applications.

Heavy-Metal-Free Colloidal Quantum Dots: Progress and Opportunities in Solar Technologies

Colloidal quantum dots (QDs) hold great promise as building blocks in solar technologies owing to their remarkable photostability and adjustable properties through the rationale involving size, atomic composition of core and shell, shapes, and surface states. However, most high-performing QDs in solar conversion contain hazardous metal elements, including Cd and Pb, posing significant environmental risks. Here, a comprehensive review of heavy-metal-free colloidal QDs for solar technologies, including photovoltaic (PV) devices, solar-to-chemical fuel conversion, and luminescent solar concentrators (LSCs), is presented. Emerging synthetic strategies to optimize the optical properties by tuning the energy band structure and manipulating charge dynamics within the QDs and at the QDs/charge acceptors interfaces, are analyzed. A comparative analysis of different synthetic methods is provided, structure-property relationships in these materials are discussed, and they are correlated with the performance of solar devices. This work is concluded with an outlook on challenges and opportunities for future work, including machine learning-based design, sustainable synthesis, and new surface/interface engineering.

Optimizing Energy Levels and Improving Film Compactness in PbS Quantum Dot Solar Cells by Silver Doping

PbS quantum dot (QD) solar cells harvest near-infrared solar radiation. Their conventional hole transport layer has limited hole collection efficiency due to energy level mismatch and poor film quality. Here, how to resolve these two issues by using Ag-doped PbS QDs are demonstrated. On the one hand, Ag doping relieves the compressive stress during layer deposition and thus improves film compactness and homogeneity to suppress leakage currents. On the other hand, Ag doping increases hole concentration, which aligns energy levels and increases hole mobility to boost hole collection. Increased hole concentration also broadens the depletion region of the active layer, decreasing interface charge accumulation and promoting carrier extraction efficiency. A champion power conversion efficiency of 12.42% is achieved by optimizing the hole transport layer in PbS QD solar cells, compared to 9.38% for control devices. Doping can be combined with compressive strain relief to optimize carrier concentration and energy levels in QDs, and even introduce other novel phenomena such as improved film quality.

Computational Discovery of Intermolecular Singlet Fission Materials Using Many-Body Perturbation Theory

Intermolecular singlet fission (SF) is the conversion of a photogenerated singlet exciton into two triplet excitons residing on different molecules. SF has the potential to enhance the conversion efficiency of solar cells by harvesting two charge carriers from one high-energy photon, whose surplus energy would otherwise be lost to heat. The development of commercial SF-augmented modules is hindered by the limited selection of molecular crystals that exhibit intermolecular SF in the solid state. Computational exploration may accelerate the discovery of new SF materials. The GW approximation and Bethe-Salpeter equation (GW+BSE) within the framework of many-body perturbation theory is the current state-of-the-art method for calculating the excited-state properties of molecular crystals with periodic boundary conditions. In this Review, we discuss the usage of GW+BSE to assess candidate SF materials as well as its combination with low-cost physical or machine learned models in materials discovery workflows. We demonstrate three successful strategies for the discovery of new SF materials: (i) functionalization of known materials to tune their properties, (ii) finding potential polymorphs with improved crystal packing, and (iii) exploring new classes of materials. In addition, three new candidate SF materials are proposed here, which have not been published previously.

Room-temperature low-threshold avalanche effect in stepwise van-der-Waals homojunction photodiodes

Avalanche or carrier-multiplication effect, based on impact ionization processes in semiconductors, has a great potential for enhancing the performance of photodetector and solar cells. However, in practical applications, it suffers from high threshold energy, reducing the advantages of carrier multiplication. Here, we report on a low-threshold avalanche effect in a stepwise WSe2 structure, in which the combination of weak electron-phonon scattering and high electric fields leads to a low-loss carrier acceleration and multiplication. Owing to this effect, the room-temperature threshold energy approaches the fundamental limit, Ethre ≈ Eg, where Eg is the bandgap of the semiconductor. Our findings offer an alternative perspective on the design and fabrication of future avalanche and hot-carrier photovoltaic devices.

Effect of Position of Donor Units and Alkyl Groups on Dye-Sensitized Solar Cell Device Performance: Indoline-Aniline Donor-Based Visible Light Active Unsymmetrical Squaraine Dyes

Indoline (In) and aniline (An) donor-based visible light active unsymmetrical squaraine (SQ) dyes were synthesized for dye-sensitized solar cells (DSSCs), where the position of An and In units was changed with respect to the anchoring group (carboxylic acid) to have In-SQ-An-CO2H and An-SQ-In-CO2H sensitizers, AS1-AS5. Linear or branched alkyl groups were functionalized with the N atom of either In or An units to control the aggregation of the dyes on TiO2. AS1-AS5 exhibit an isomeric π-framework where the squaric acid unit is placed in the middle, where AS2 and AS5 dyes possess the anchoring group connected with the An donor, and AS1, AS3, and AS4 dyes having the anchoring group connected with the In donor. Hence, the conjugation between the middle squaric acid acceptor unit and the anchoring -CO2H group is short for AS2, AS5, and AK2 and longer for AS1, AS3, and AS4 dyes. AS dyes showed absorption between 501 and 535 nm with extinction coefficients of 1.46-1.61 × 105 M-1 cm-1. Further, the isomeric π-framework of An-SQ-In-CO2H and In-SQ-An-CO2H exhibited by means of changing the position of In and An units a bathochromic shift in the absorption properties of AS2 and AS5 compared to the AS1, AS3, and AS4 dyes. The DSSC device fabricated with the dyes contains short acceptor-anchoring group distance (AS2 and AS5) showed high photovoltaic performances compared to the dyes having longer distance (AS1, AS3, and AS4) with the iodolyte (I-/I3-) electrolyte. DSSC device efficiencies of 5.49, 6.34, 6.16, and 5.57% have been achieved for AS1, AS2, AS3, and AS4 dyes, respectively; without chenodeoxycholic acid (CDCA), small changes have been observed in the device performance of the AS dyes with CDCA. Significant changes have been noted in the DSSC parameters (open-circuit voltage VOC, short-circuit current JSC, fill factor ff, and efficiency η) for the AS5 dye while sensitized with CDCA and showed highest DSSC efficiency of 8.01% in the AS dye series. This study revealed the potential of shorter SQ acceptor-anchoring group distance over the longer one and the importance of alkyl groups on the overall DSSC device performance for the unsymmetrical squaraine dyes.

Study of Laser-Induced Multi-Exciton Generation and Dynamics by Multi-Photon Absorption in CdSe Quantum Dots

Multi-exciton generation by multi-photon absorption under low-energy photons can be thought a reasonable method to reduce the risk of optical damage, especially in photoelectric quantum dot (QD) devices. The lifetime of the multi-exciton state plays a key role in the utilization of photon-induced carriers, which depends on the dynamics of the exciton generation process in materials. In this paper, the exciton generation dynamics of the photon absorption under low-frequency light in CdSe QDs are successfully detected and studied by the temporal resolution transient absorption (TA) spectroscopy method. Since the cooling time of hot excitons extends while the rate of auger recombination is accelerated when incident energy is increased, the filling time of defect states is irregular, and exciton generation experiences a transition from single-photon absorption to multi-photon absorption. This result shows how to change the excitation. Optical parameters can prolong the lifetime of excitons, thus fully extracting excitons and improving the photoelectric conversion efficiency of QD optoelectronic devices, which provides theoretical and experimental support for the development of QD optoelectronic devices.

In situ synergistic halogen passivation of semiconducting PbS quantum dot inks for efficient photovoltaics

Lead sulfide colloidal quantum dots (PbS CQDs) show great potential in next-generation photovoltaics. However, their high specific surface area and complex surface crystallography lead to a high surface trap density, which normally requires more than one type of capping ion or ligand to achieve effective surface passivation. In this study, we performed in situ mixed halogen passivation (MHP) during the direct synthesis of semiconducting PbS CQD inks by using different lead halogens. The different halogens can bind with the surface of the CQD throughout the nucleation/growth process, resulting in optimal surface configuration. As a result, the MHP CQD exhibited superior surface passivation compared to the conventionally iodine-capped CQDs. Finally, we achieved a substantial improvement in efficiency from 10.64% to 12.58% after the MHP treatment. Our work demonstrates the advantages of exploring efficient passivation in the directly synthesized CQD inks.

Recent Advance in the Development of Singlet-Fission-Capable Polymeric Materials

Singlet fission (SF) is a spin-allowed process in which a higher-energy singlet exciton is converted into two lower-energy triplet excitons via a triplet pair intermediate state. Implementing SF in photovoltaic devices holds the potential to exceed the Shockley-Queisser limit of conventional single-junction solar cells. Although great progress has been made in exploiting the underlying mechanism of SF over the past decades, the scope of materials capable of SF, particularly polymeric materials, remains poor. SF-capable polymer is one of the most potential candidates in the implementation of SF into devices due to their distinct superiorities in flexibility, solution processability and self-assembly behavior. Notably, recent advancements have demonstrated high-performance SF in isolated donor-acceptor (D-A) copolymer chains. This review provides an overview of recent progress in the development of SF-capable polymeric materials, with a significant focus on elucidating the mechanisms of SF in polymers and optimizing the design strategies for SF-capable polymers. Additionally, the paper discusses the challenges encountered in this field and presents future perspectives. It is expected that this comprehensive review will offer valuable insights into the design of novel SF-capable polymeric materials, further advancing the potential for SF implementation in photovoltaic devices.

Unveiling the Role of Donor Impurity Position on the Electronic Properties in Strained Type I and Type II Core/Shell Quantum Dots under Magnetic Field

In this theoretical investigation, we delve into the significant effects of donor impurity position within core/shell quantum dot structures: type I (CdTe/ZnS) and type II (CdTe/CdS). The donor impurity's precise location within both the core and the shell regions is explored to unveil its profound influence on the electronic properties of these nanostructures. Our study investigates the diamagnetic susceptibility and binding energy of the donor impurity while considering the presence of an external magnetic field. Moreover, the lattice mismatch-induced strain between the core and shell materials is carefully examined as it profoundly influences the electronic structure of the quantum dot system. Through detailed calculations, we analyze the strain effects on the conduction and valence bands, as well as the electron and hole energy spectrum within the core/shell quantum dots. The results highlight the significance of donor impurity position as a key factor in shaping the behaviors of impurity binding energy and diamagnetic susceptibility. Furthermore, our findings shed light on the potential for tuning the electronic properties of core/shell quantum dots through precise impurity positioning and strain engineering.

Insights to Carrier-Phonon Interactions in Lead Halide Perovskites via Multi-Pulse Manipulation

A fundamental understanding of the hot-carrier dynamics in halide perovskites is crucial for unlocking their prospects for next generation photovoltaics. Presently, a coherent picture of the hot carrier cooling process remains patchy due to temporally overlapping contributions from many-body interactions, multi-bands, band gap renormalization, Burstein-Moss shift etc. Pump-push-probe (PPP) spectroscopy recently emerges as a powerful tool complementing the ubiquitous pump-probe (PP) spectroscopy in the study of hot-carrier dynamics. However, limited information from PPP on the initial excitation density and carrier temperature curtails its full potential. Herein, this work bridges this gap in PPP with a unified model that retrieves these essential hot carrier metrics like initial carrier density and carrier temperature under the push conditions, thus permitting direct comparison with traditional PP spectroscopy. These results are well-fitted by the phonon bottleneck model, from which the longitudinal optical phonon scattering time τLO , for MAPbBr3 and MAPbI3 halide perovskite thin film samples are determined to be 240 ± 10 and 370 ± 10 fs, respectively.

Boosting internal quantum efficiency via ultrafast triplet transfer to 2H-MoTe2 film

Organic systems often allow to create two triplet spin states (triplet excitons) by converting an initially excited singlet spin state (a singlet exciton). An ideally designed organic/inorganic heterostructure could reach the photovoltaic energy harvest over the Shockley-Queisser (S-Q) limit because of the efficient conversion of triplet excitons into charge carriers. Here, we demonstrate the molybdenum ditelluride (MoTe₂)/pentacene heterostructure to boost the carrier density via efficient triplet transfer from pentacene to MoTe₂ using ultrafast transient absorption spectroscopy. We observe carrier multiplication by nearly four times by doubling carriers in MoTe₂ via the inverse Auger process and subsequently doubling carriers via triplet extraction from pentacene. We also verify efficient energy conversion by doubling the photocurrent in the MoTe₂/pentacene film. This puts a step forward to enhancing photovoltaic conversion efficiency beyond the S-Q limit in the organic/inorganic heterostructures.

Colloidal 2D Lead Chalcogenide Nanocrystals: Synthetic Strategies, Optical Properties, and Applications

Lead chalcogenide nanocrystals (NCs) are an emerging class of photoactive materials that have become a versatile tool for fabricating new generation photonics devices operating in the near-IR spectral range. NCs are presented in a wide variety of forms and sizes, each of which has its own unique features. Here, we discuss colloidal lead chalcogenide NCs in which one dimension is much smaller than the others, i.e., two-dimensional (2D) NCs. The purpose of this review is to present a complete picture of today's progress on such materials. The topic is quite complicated, as a variety of synthetic approaches result in NCs with different thicknesses and lateral sizes, which dramatically change the NCs photophysical properties. The recent advances highlighted in this review demonstrate lead chalcogenide 2D NCs as promising materials for breakthrough developments. We summarized and organized the known data, including theoretical works, to highlight the most important 2D NC features and give the basis for their interpretation.

Optical properties of ZnFe2O4 nanoparticles and Fe-decorated inversion domain boundaries in ZnO

The maximum efficiency of solar cells utilizing a single layer for photovoltaic conversion is given by the single junction Shockley-Queisser limit. In tandem solar cells, a stack of materials with different band gaps contribute to the conversion, enabling tandem cells to exceed the single junction Shockley-Queisser limit. An intriguing variant of this approach is to embed semiconducting nanoparticles in a transparent conducting oxide (TCO) solar cell front contact. This alternative route would enhance the functionality of the TCO layer, allowing it to participate directly in photovoltaic conversion via photon absorption and charge carrier generation in the nanoparticles. Here, we demonstrate the functionalization of ZnO through incorporation of either ZnFe2O4 spinel nanoparticles (NPs) or inversion domain boundaries (IDBs) decorated by Fe. Diffuse reflectance spectroscopy and electron energy loss spectroscopy show that samples containing spinel particles and samples containing IDBs decorated by Fe both display enhanced absorption in the visible range at around 2.0 and 2.6 eV. This striking functional similarity was attributed to the local structural similarity around Fe-ions in spinel ZnFe2O4 and at Fe-decorated basal IDBs. Hence, functional properties of the ZnFe2O4 arise already for the two-dimensional basal IDBs, from which these planar defects behave like two-dimensional spinel-like inclusions in ZnO. Cathodoluminescence spectra reveal an increased luminescence around the band edge of spinel ZnFe2O4 when measuring on the spinel ZnFe2O4 NPs embedded in ZnO, whereas spectra from Fe-decorated IDBs could be deconvoluted into luminescence contributions from bulk ZnO and bulk ZnFe2O4.

Carrier Multiplication in Transition Metal Dichalcogenides Beyond Threshold Limit

Carrier multiplication (CM), multiexciton generation by absorbing a single photon, enables disruptive improvements in photovoltaic conversion efficiency. However, energy conservation constrains the threshold energy to at least twice bandgap (2E g $ E_\text{g}$ ). Here, a below threshold limit CM in monolayer transition metal dichalcogenides (TMDCs) is reported. Surprisingly, CM is observed with excitation energy of only 1.75E g $E_\text{g}$ due to lattice vibrations. Electron-phonon coupling (EPC) results in significant changes in electronic structures, which favors CM. Indeed, the strongest EPC in monolayer MoS2 leads to the most efficient CM among the studied TMDCs. For practical applications, chalcogen vacancies can further lower the threshold by introducing defect states within bandgap. In particular, for monolayer WS2 , CM occurs with excitation energy as low as 1.51E g $E_\text{g}$ . The results identify TMDCs as attractive candidate materials for efficient optoelectronic devices with the advantages of high photoconductivity and efficient CM.

Dye-Sensitized Multiple Exciton Generation in Lead Sulfide Quantum Dots

Multiple exciton generation (MEG), the generation of multiple excitons from the absorption of a single high-energy photon, is a strategy to go beyond the limiting efficiencies that define current-day solar cells by harvesting some of the thermalization energy losses that occur when photons with an energy greater than the semiconductor bandgap are absorbed. In this work, we show that organic dyes can sensitize MEG in semiconductor quantum dots (QDs). In particular, we found that surface-anchored pyrene ligands enhanced the photon-to-charge carrier quantum yield of PbS QDs from 113 ± 3% to 183 ± 7% when the photon energy was 3.9 times the band gap. A wavelength dependence study shows that the enhancement is positively correlated with the pyrene absorptivity. Transient absorption and steady-state photoluminescence measurements suggest that the MEG sensitization is based on an initial fast electron transfer from the pyrene ligands to the PbS QDs producing hot-electrons in the QDs that subsequently undergo MEG. This work demonstrates that hybrid and synergistic organic/inorganic interactions can be a successful strategy to enhance MEG.

Electron Transfer at Quantum Dot–Metal Oxide Interfaces for Solar Energy Conversion

Electron transfer at a donor–acceptor quantum dot–metal oxide interface is a process fundamentally relevant to solar energy conversion architectures as, e.g., sensitized solar cells and solar fuels schemes. As kinetic competition at these technologically relevant interfaces largely determines device performance, this Review surveys several aspects linking electron transfer dynamics and device efficiency; this correlation is done for systems aiming for efficiencies up to and above the ∼33% efficiency limit set by Shockley and Queisser for single gap devices. Furthermore, we critically comment on common pitfalls associated with the interpretation of kinetic data obtained from current methodologies and experimental approaches, and finally, we highlight works that, to our judgment, have contributed to a better understanding of the fundamentals governing electron transfer at quantum dot–metal oxide interfaces.

Dynamics of Excitons in Conjugated Molecules and Organic Semiconductor Systems

The exciton, an excited electron-hole pair bound by Coulomb attraction, plays a key role in photophysics of organic molecules and drives practically important phenomena such as photoinduced mechanical motions of a molecule, photochemical conversions, energy transfer, generation of free charge carriers, etc. Its behavior in extended π-conjugated molecules and disordered organic films is very different and very rich compared with exciton behavior in inorganic semiconductor crystals. Due to the high degree of variability of organic systems themselves, the exciton not only exerts changes on molecules that carry it but undergoes its own changes during all phases of its lifetime, that is, birth, conversion and transport, and decay. The goal of this review is to give a systematic and comprehensive view on exciton behavior in π-conjugated molecules and molecular assemblies at all phases of exciton evolution with emphasis on rates typical for this dynamic picture and various consequences of the above dynamics. To uncover the rich variety of exciton behavior, details of exciton formation, exciton transport, exciton energy conversion, direct and reverse intersystem crossing, and radiative and nonradiative decay are considered in different systems, where these processes lead to or are influenced by static and dynamic disorder, charge distribution symmetry breaking, photoinduced reactions, electron and proton transfer, structural rearrangements, exciton coupling with vibrations and intermediate particles, and exciton dissociation and annihilation as well.

A Review on the Effects of ZnO Nanowire Morphology on the Performance of Interpenetrating Bulk Heterojunction Quantum Dot Solar Cells

Interpenetrating bulk heterojunction (IBHJ) quantum dot solar cells (QDSCs) offer a direct pathway for electrical contacts to overcome the trade-off between light absorption and carrier extraction. However, their complex three-dimensional structure creates higher requirements for the optimization of their design due to their more difficult interface defect states control, more complex light capture mechanism, and more advanced QD deposition technology. ZnO nanowire (NW) has been widely used as the electron transport layer (ETL) for this structure. Hence, the optimization of the ZnO NW morphology (such as density, length, and surface defects) is the key to improving the photoelectric performance of these SCs. In this study, the morphology control principles of ZnO NW for different synthetic methods are discussed. Furthermore, the effects of the density and length of the NW on the collection of photocarriers and their light capture effects are investigated. It is indicated that the NW spacing determines the transverse collection of electrons, while the length of the NW and the thickness of the SC often affect the longitudinal collection of holes. Finally, the optimization strategies for the geometrical morphology of and defect passivation in ZnO NWs are proposed to improve the efficiency of IBHJ QDSCs.

Surface band bending and carrier dynamics in colloidal quantum dot solids

Band bending in colloidal quantum dot (CQD) solids has become important in driving charge carriers through devices. This is typically a result of band alignments at junctions in the device. Whether band bending is intrinsic to CQD solids, i.e. is band bending present at the surface-vacuum interface, has previously been unanswered. Here we use photoemission surface photovoltage measurements to show that depletion regions are present at the surface of n and p-type CQD solids with various ligand treatments (EDT, MPA, PbI₂, MAI/PbI₂). Using laser-pump photoemission-probe time-resolved measurements, we show that the timescale of carrier dynamics in the surface of CQD solids can vary over at least 6 orders of magnitude, with the fastest dynamics on the order of microseconds in PbS-MAI/PbI₂ solids and on the order of seconds for PbS-MPA and PbS-PbI₂. By investigating the surface chemistry of the solids, we find a correlation between the carrier dynamics timescales and the presence of oxygen contaminants, which we suggest are responsible for the slower dynamics due to deep trap formation.

A low-temperature solution-processed indium incorporated zinc oxide electron transport layer for high-efficiency lead sulfide colloidal quantum dot solar cells

Colloidal quantum dot solar cells (CQDSCs) have achieved remarkable progress recently in terms of mainly surface passivation and composition-matching matrices on CQDs, while improving the overall photoelectric conversion efficiency (PCE) through electron transport layer (ETL) modifications is less explored. We report a low-temperature solution route to synthesize donor (Al³⁺/Ga³⁺/In³⁺) incorporated zinc oxide (AZO/GZO/IZO) ETL films for PbS CQDSCs. Spectroscopic characterization studies indicate that the IZO ETL fabricated with 150 °C annealing can increase the bandgap the most from 3.56 eV to 3.74 eV, possesses enhanced light transmission (∼94%) and finer particle sizes, and importantly shows the most suitable band alignment and charge transfer ability. Well-dispersed PbS CQDs of around 3 nm are synthesized by a N₂-protected reflux method and are surface exchanged with 1-ethyl-3-methylimidazolium iodide (EMII) to allow I^- grafting and ethanedithiol (EDT) for the active layer and hole transport layer, respectively. The IZO based PbS CQDSC, with a device architecture of ITO/IZO/PbS-EMII/PbS-EDT/Au, shows an enhanced PCE of 11.1% (comparatively 18% higher than that of the ZnO ETL), a V_OC value of 0.64 V, and a J_SC of 25.8 mA cm^-2. The improved performances benefit from the higher recombination resistance and constrained photoluminescence emission with the utilization of the IZO ETL that provides a superior charge transfer property.

Multiple exciton generation in isolated and interacting silicon nanocrystals

An important challenge in the field of renewable energy is the development of novel nanostructured solar cell devices which implement low-dimensional materials to overcome the limits of traditional photovoltaic systems. For optimal energy conversion in photovoltaic devices, one important requirement is that the full energy of the solar spectrum is effectively used. In this context, the possibility of exploiting features and functionalities induced by the reduced dimensionality of the nanocrystalline phase, in particular by the quantum confinement of the electronic density, can lead to a better use of the carrier excess energy and thus to an increment of the thermodynamic conversion efficiency of the system. Carrier multiplication, i.e. the generation of multiple electron-hole pairs after absorption of one single high-energy photon (with energy at least twice the energy gap of the system), can be exploited to maximize cell performance, promoting a net reduction of loss mechanisms. Over the past fifteen years, carrier multiplication has been recorded in a large variety of semiconductor nanocrystals and other nanostructures. Owing to the role of silicon in solar cell applications, the mission of this review is to summarize the progress in this fascinating research field considering carrier multiplication in Si-based low-dimensional systems, in particular Si nanocrystals, both from the experimental and theoretical point of view, with special attention given to the results obtained by ab initio calculations.

Aspect ratio dependent air stability of PbSe nanorods and photovoltaic applications

Development of unique strategies to overcome Shockley–Queisser (SQ) limit in solar cells has gained a great deal of interest. Multiple exciton generation (MEG) process has been considered as one of the best approaches to the SQ limitation. In this respect, PbSe quantum dots (QDs) and nanorods (NRs) have been regarded as promising solar energy harvesting materials owing to their noticeable MEG yields. Although air stability has been regarded as one of the main disadvantage of PbSe QDs, no study has pointed out to the air sensitivity of PbSe NRs yet. Here, we reveal the effect of aspect ratio on air sensitivity and optical properties of PbSe NRs and discover that NRs with higher aspect ratios are more air stable, attributed to the reduced density of NR ends with air sensitive {100} facets. Furthermore, a band offset was created by utilization of tetrabutylammonium iodide and 1,2-ethanedithiol ligands in cell designs. We found that solar cells based on pristine PbSe NRs are limited by low open circuit voltages due to leakage current pathways. On the other hand, modified cells comprising light absorbing layers prepared by blending NRs and QDs and hole transporting QD layer exhibit a 10-fold improvement in solar cell efficiency.

Hot excitons cooling and multiexcitons Auger recombination in PbS quantum dots

In the past few years, lead chalcogenide quantum dots (QDs) have attracted attention as a new system with a strong quantum confinement effect. In this paper, the hot-excitons cooling and Auger recombination of multiexcitons in PbS QDs are investigated by the femtosecond time-resolved transient absorption spectroscopy. The results show that the excitons dynamics in PbS QDs are closely related to the pump-photon energy and pump-pulse energy. Multiexcitons generate when the excess energy of the absorbed photons is larger than the bandgap energy in PbS QDs. The hot-excitons cooling lifetime increases but the Auger recombination lifetime decreases as the pump-photon energy and the pump-pulse energy increase. Besides, there is a competitive relation between multiple-excitons generation and hot-excitons cooling. The dynamics results of the formation and relaxation of multiexcitons in PbS QDs would shed light on the further understanding of the interaction between excitons and photons in the optoelectronic application based on PbS QDs.

Nanocrystal Quantum Dots: From Discovery to Modern Development

This review traces nanocrystal quantum dot (QD) research from the early discoveries to the present day and into the future. We describe the extensive body of theoretical and experimental knowledge that comprises the modern science of QDs. Indeed, the spatial confinement of electrons, holes, and excitons in nanocrystals, coupled with the ability of modern chemical synthesis to make complex designed structures, is today enabling multiple applications of QD size-tunable electronic and optical properties.

Rare-earth quantum cutting in metal halide perovskites - a review

Ytterbium-doped lead halide perovskite (Yb³⁺:CsPbX₃ with x = Cl or Cl/Br) nanocrystals and thin films have shown surprisingly efficient downconversion by quantum cutting with PLQYs up to 193%. After excitation of the perovskite host with high-energy photons, the excited states of two Yb ions are rapidly populated, subsequently emitting lower-energy photons. Several synthesis routes lead to highly efficient materials, and we review the progress on both the synthesis, material quality and applicability of these downconversion layers. For solar cells they could be used to increase the power converted from high-energy photons, and first applications have already shown an increase in the power conversion efficiency of silicon and CIGS solar cells. Applications such as luminescent solar concentrators an LEDs are also explored. With further research to overcome challenges regarding power saturation and stability, this material has great potential for a simple route to enhance solar cells.

Zn-Cu-In-S-Se Quinary "Green" Alloyed Quantum-Dot-Sensitized Solar Cells with a Certified Efficiency of 14.4

The photoelectronic properties of quantum dots (QDs) have a critical impact on the performance of quantum-dot-sensitized solar cells (QDSCs). Currently, I-III-VI group QDs have become the mainstream light-harvesting materials in high-performance QDSCs. However, it is still a great challenge to achieve satisfactory efficiency for light-harvesting, charge extraction, and charge collection simultaneously in QDSCs. We design and prepare Zn_0.4 Cu_0.7 In_1.0 S_x Se_2-x (ZCISSe) quinary alloyed QDs by cation/anion co-alloying strategy. The critical photoelectronic properties of target QDs, including band gap, conduction band energy level, and density of defect trap states, can be conveniently tailored. Experimental results demonstrate that the ZCISSe quinary alloyed QDs can achieve an ideal balance among light-harvesting, photogenerated electron extraction, and charge-collection efficiencies in QDSCs compared to its single anion or cation quaternary alloyed QD counterparts. Consequently, the quinary alloyed QDs boost the certified efficiency of QDSCs to 14.4 %, which is a new efficiency record for liquid-junction QD solar cells.

Nanotechnology for catalysis and solar energy conversion

This roadmap on Nanotechnology for Catalysis and Solar Energy Conversion focuses on the application of nanotechnology in addressing the current challenges of energy conversion: 'high efficiency, stability, safety, and the potential for low-cost/scalable manufacturing' to quote from the contributed article by Nathan Lewis. This roadmap focuses on solar-to-fuel conversion, solar water splitting, solar photovoltaics and bio-catalysis. It includes dye-sensitized solar cells (DSSCs), perovskite solar cells, and organic photovoltaics. Smart engineering of colloidal quantum materials and nanostructured electrodes will improve solar-to-fuel conversion efficiency, as described in the articles by Waiskopf and Banin and Meyer. Semiconductor nanoparticles will also improve solar energy conversion efficiency, as discussed by Boschloo et al in their article on DSSCs. Perovskite solar cells have advanced rapidly in recent years, including new ideas on 2D and 3D hybrid halide perovskites, as described by Spanopoulos et al 'Next generation' solar cells using multiple exciton generation (MEG) from hot carriers, described in the article by Nozik and Beard, could lead to remarkable improvement in photovoltaic efficiency by using quantization effects in semiconductor nanostructures (quantum dots, wires or wells). These challenges will not be met without simultaneous improvement in nanoscale characterization methods. Terahertz spectroscopy, discussed in the article by Milot et al is one example of a method that is overcoming the difficulties associated with nanoscale materials characterization by avoiding electrical contacts to nanoparticles, allowing characterization during device operation, and enabling characterization of a single nanoparticle. Besides experimental advances, computational science is also meeting the challenges of nanomaterials synthesis. The article by Kohlstedt and Schatz discusses the computational frameworks being used to predict structure-property relationships in materials and devices, including machine learning methods, with an emphasis on organic photovoltaics. The contribution by Megarity and Armstrong presents the 'electrochemical leaf' for improvements in electrochemistry and beyond. In addition, biohybrid approaches can take advantage of efficient and specific enzyme catalysts. These articles present the nanoscience and technology at the forefront of renewable energy development that will have significant benefits to society.

Toward printable solar cells based on PbX colloidal quantum dot inks

Lead chalcogenide (PbX, X = S, Se) colloidal quantum dots (CQDs) are promising solution-processed semiconductor materials for the construction of low-cost, large-area, and flexible solar cells. The properties of CQDs endow them with advantages in semi-conducting film deposition compared to other solution-processed photovoltaic materials, which is critical for the fabrication of efficient large-area solar cells towards industrialization. However, the development of large-area CQD solar cells is impeded by the conventional solid-state ligand exchange process, where the tedious processing with high expense is indispensable to facilitate charge transport of CQD films for photovoltaic applications. In the past several years, the rapid development of CQD inks has boosted the device performance and dramatically simplified the fabrication process. The CQD inks are compatible with most of the industrialized printing techniques, demonstrating potential in fabricating solar modules for commercialization. This article aims to review the recent advances in solar cells based on PbX CQD inks, including both lab-scale and large-area photovoltaic devices prepared from solution-phase ligand exchange (SPLE) as well as the recently invented "one-step" synthesis. We expect to draw attention to the enormous potential of CQD inks for developing high-efficiency and low-cost large-area photovoltaics.

Highly Efficient Multiple Exciton Generation and Harvesting in Few-Layer Black Phosphorus and Heterostructure

Multiple exciton generation (MEG) in semiconductors that yields two or more excitons by absorbing one high-energy photon has been proposed to break the Shockley-Queisser limit and boost photon-to-electron conversion efficiency. However, MEG performance in conventional bulk semiconductors or later colloidal nanocrystals is far from satisfactory. Here, we report efficient MEG in few-layer black phosphorus (BP), a direct narrow bandgap two-dimensional (2D) semiconductor with layer-tunable properties. MEG performance improves with decreasing layer number and reaches 2.09E_g threshold and 93% efficiency for two-layer BP, approaching energy conservation limit. The enhanced MEG can be attributed to strong Coulomb interaction and high density of states in 2D materials. Furthermore, MEG of BP shows negligible degradation in vertical heterostructure and multielectron can be extracted by interfacial transfer with near unity yield. These results suggest 2D semiconductors as an ideal system for next generation highly efficient light emission and charge transfer devices.

Synergistic Effect of Plasmonic Gold Nanoparticles Decorated Carbon Nanotubes in Quantum Dots/TiO2 for Optoelectronic Devices

Here, a facile approach to enhance the performance of solar-driven photoelectrochemical (PEC) water splitting is described by means of the synergistic effects of a hybrid network of plasmonic Au nanoparticles (NPs) decorated on multiwalled carbon nanotubes (CNTs). The device based on TiO2-Au:CNTs hybrid network sensitized with colloidal CdSe/(CdSe x S1- x )5/(CdS)1 core/alloyed shell quantum dots (QDs) yields a saturated photocurrent density of 16.10 ± 0.10 mA cm-2 [at 1.0 V vs reversible hydrogen electrode (RHE)] under 1 sun illumination (AM 1.5G, 100 mW cm-2), which is ≈26% higher than the control device. The in-depth mechanism behind this significant improvement is revealed through a combined experimental and theoretical analysis for QDs/TiO2-Au:CNTs hybrid network and demonstrates the multifaceted impact of plasmonic Au NPs and CNTs: i) hot-electron injection from Au NPs into CNTs and TiO2; ii) near-field enhancement of the QDs absorption and carrier generation/separation processes by the plasmonic Au NPs; iii) enhanced photoinjected electron transport due to the highly directional pathways offered by CNTs. These results provide fundamental insights on the properties of QDs/TiO2-Au:CNTs hybrid network, and highlights the possibility to improve the performance of other solar technologies.

Efficient Carrier Multiplication in Low Band Gap Mixed Sn/Pb Halide Perovskites

Carrier multiplication (CM) generates multiple electron-hole pairs in a semiconductor from a single absorbed photon with energy exceeding twice the band gap. Thus, CM provides a promising way to circumvent the Shockley-Queisser limit of solar cells. The ideal material for CM should have significant overlap with the solar spectrum and should be able to fully utilize the excess energy above the band gap for additional charge carrier generation. We report efficient CM in mixed Sn/Pb halide perovskites (band gap of 1.28 eV) with onset just above twice the band gap. The CM rate outcompetes the carrier cooling process leading to efficient CM with a quantum yield of 2 for photoexcitation at 2.8 times the band gap. Such efficient CM characteristics add to the many advantageous properties of mixed Sn/Pb metal halide perovskites for photovoltaic applications.

Anti-Reflective Coating Materials: A Holistic Review from PV Perspective

The solar photovoltaic (PV) cell is a prominent energy harvesting device that reduces the strain in the conventional energy generation approach and endorses the prospectiveness of renewable energy. Thus, the exploration in this ever-green field is worth the effort. From the power conversion efficiency standpoint of view, PVs are consistently improving, and when analyzing the potential areas that can be advanced, more and more exciting challenges are encountered. One such crucial challenge is to increase the photon availability for PV conversion. This challenge is solved using two ways. First, by suppressing the reflection at the interface of the solar cell, and the other way is to enhance the optical pathlength inside the cell for adequate absorption of the photons. Our review addresses this challenge by emphasizing the various strategies that aid in trapping the light in the solar cells. These strategies include the usage of antireflection coatings (ARCs) and light-trapping structures. The primary focus of this study is to review the ARCs from a PV application perspective based on various materials, and it highlights the development of ARCs from more than the past three decades covering the structure, fabrication techniques, optical performance, features, and research potential of ARCs reported. More importantly, various ARCs researched with different classes of PV cells, and their impact on its efficiency is given a special attention. To enhance the optical pathlength, and thus the absorption in solar PV devices, an insight about the advanced light-trapping techniques that deals with the concept of plasmonics, spectral modification, and other prevailing innovative light-trapping structures approaching the Yablonovitch limit is discussed. An extensive collection of information is presented as tables under each core review section. Further, we take a step forward to brief the effects of ageing on ARCs and their influence on the device performance. Finally, we summarize the review of ARCs on the basis of structures, materials, optical performance, multifunctionality, stability, and cost-effectiveness along with a master table comparing the selected high-performance ARCs with perfect AR coatings. Also, from the discussed significant challenges faced by ARCs and future outlook; this work directs the researchers to identify the area of expertise where further research analysis is needed in near future.

Carrier Multiplication in PbS Quantum Dots Anchored on a Au Tip using Conductive Atomic Force Microscopy

Carrier multiplication (CM) is the amplification of the excited carrier density by two times or more when the incident photon energy is larger than twice the bandgap of semiconductors. A practical approach to demonstrate the CM involves the direct measurement of photocurrent in the device. Specifically, photocurrent measurement in quantum dots (QDs) is typically limited by high contact resistance and long carrier-transfer length, which yields a low CM conversion efficiency and high CM threshold energy. Here, the local photocurrent is measured to evaluate the CM quantum efficiency from a QD-attached Au tip of a conductive atomic force microscope (CAFM) system. The photocurrent is efficiently measured between the PbS QDs anchored on a Au tip and a graphene layer on a SiO₂ /Si substrate as a counter electrode, yielding an extremely short channel length that reduces the contact resistance. The quantum efficiency extracted from the local photocurrent data with an incident photon energy exhibits a step-like behavior. More importantly, the CM threshold energy is as low as twice the bandgap, which is the lowest threshold energy of optically observed QDs to date. This enables the CAFM-based photocurrent technique to directly evaluate the CM conversion efficiency in low-dimensional materials.

Efficient PbSe Colloidal Quantum Dot Solar Cells Using SnO2 as a Buffer Layer

PbSe colloidal quantum dots (CQDs) are widely used in solar cells because of their tunable band gap, solution processability, and efficient multiple exciton generation effect. The most efficient PbSe CQD solar cells use high-temperature-processed ZnO as the electron transport layer (ETL), limiting their applications in flexible photovoltaics. Currently, low-temperature solution-processed SnO₂ has been demonstrated as an efficient ETL for high-efficient PbS CQD and perovskite solar cells because of less parasitic light absorption and higher electron mobility. Herein, we introduce low-temperature solution-processed SnO₂ as ETL for PbSe CQD solar cells, and fabricate the PbSe CQD absorber layer with a one-step spin-coating method. The champion device with the structure of FTO (SnO₂:F)/SnO₂/PbSe-PbI₂/PbS-EDT (1,2-ethanedithiol)/Au achieves a high open-circuit voltage of 577.1 mV, a short-circuit current density of 24.87 mA  cm^-2, a fill factor of 67%, and an impressive power conversion efficiency of 9.67%. Our results pave the way for the development of low-temperature flexible PbSe CQD solar cells.

Photoexcited carrier dynamics in colloidal quantum dot solar cells: insights into individual quantum dots, quantum dot solid films and devices

The certified power conversion efficiency (PCE) record of colloidal quantum dot solar cells (QDSCs) has considerably improved from below 4% to 16.6% in the last few years. However, the record PCE value of QDSCs is still substantially lower than the theoretical efficiency. So far, there have been several reviews on recent and significant achievements in QDSCs, but reviews on photoexcited carrier dynamics in QDSCs are scarce. The photovoltaic performances of QDSCs are still limited by the photovoltage, photocurrent and fill factor that are mainly determined by the photoexcited carrier dynamics, including carrier (or exciton) generation, carrier extraction or transfer, and the carrier recombination process, in the devices. In this review, the photoexcited carrier dynamics in the whole QDSCs, originating from individual quantum dots (QDs) to the entire device as well as the characterization methods used for analyzing the photoexcited carrier dynamics are summarized and discussed. The recent research including photoexcited multiple exciton generation (MEG), hot electron extraction, and carrier transfer between adjacent QDs, as well as carrier injection and recombination at each interface of QDSCs are discussed in detail herein. The influence of photoexcited carrier dynamics on the physiochemical properties of QDs and photovoltaic performances of QDSC devices is also discussed.

Semiconductor nanocrystals for small molecule activation via artificial photosynthesis

The protocol of artificial photosynthesis using semiconductor nanocrystals shines light on green, facile and low-cost small molecule activation to produce solar fuels and value-added chemicals.

Classification of Spatially Confined Reactions and the Electrochemical Applications of Molybdenum-Based Nanocomposites

As a popular material synthesis method, spatially confined reactions have been gradually recognised for their excellent performance in the field of current materials synthesis. In recent years, molybdenum-based catalysts have gradually gained recognition due to high natural reserves of Mo, its low cost, and many other advantages, and they have wide applications in the area of functional materials, especially in topical areas such as batteries and electrocatalysts. In this context, spatially confined reactions have become widely to obtain various types of molybdenum-based electrode materials and electrocatalysts which result in an excellent morphology, structure, and performance. In this review, the concept of a spatially confined reaction system and the electrochemical application (electrode materials and electrocatalyst) of molybdenum-based materials synthesised in this way are comprehensively discussed. The current problems and future development and application of molybdenum-based materials are also discussed in this review.

Carrier multiplication in van der Waals layered transition metal dichalcogenides

Carrier multiplication (CM) is a process in which high-energy free carriers relax by generation of additional electron-hole pairs rather than by heat dissipation. CM is promising disruptive improvements in photovoltaic energy conversion and light detection technologies. Current state-of-the-art nanomaterials including quantum dots and carbon nanotubes have demonstrated CM, but are not satisfactory owing to high-energy-loss and inherent difficulties with carrier extraction. Here, we report CM in van der Waals (vdW) MoTe₂ and WSe₂ films, and find characteristics, commencing close to the energy conservation limit and reaching up to 99% CM conversion efficiency with the standard model. This is demonstrated by ultrafast optical spectroscopy with independent approaches, photo-induced absorption, photo-induced bleach, and carrier population dynamics. Combined with a high lateral conductivity and an optimal bandgap below 1 eV, these superior CM characteristics identify vdW materials as an attractive candidate material for highly efficient and mechanically flexible solar cells in the future.

During carrier multiplication, high-energy free carriers in a given material relax by generation of additional electron-hole pairs. Here, the authors report evidence of carrier multiplication in multilayer MoTe₂ and WSe₂ films with up to 99% conversation efficiency.

Strategies for extending charge separation in colloidal nanostructured quantum dot materials

Semiconductor colloidal metal chalcogenides (II-VI) in the form of quantum dots (QDs) and different heterostructures (core/shell, alloys, etc.) are of extensive interest in scientific research for both a fundamental understanding and technological applications because of their quantized size and different optical properties; however, due to their small size, the exciton (bound electron and hole) experiences a strong Coulombic attraction, which has a remarkable impact on the charge separation and photophysical properties of QDs. Thus, to achieve an efficient charge separation, numerous attempts have been made via the formation of different heterostructures, QD/molecular adsorbate (either organic or inorganic) assemblies, etc. These hybrid materials ameliorated the absorption of the incident light as well as charge separation. This article reviews the strategies for extending charge separation in these colloidal nanocrystals (NCs), which is one of the crucial steps to elevate the solar to electrical energy conversion efficiency in a quantum dot-sensitized solar cell (QDSC). The article summarizes the benefits of co-sensitization and experimental shreds of evidence for the multiple charge transfer processes involved in a QDSC. Studies have shown that in the co-sensitization process, prolonged charge separation occurs via the dual behavior of the molecular adsorbate, sensitization (electron injection) and capture of holes from photoexcited QDs. This perspective emphases band edge engineering and control of charge carrier dynamics in various core/shell structures. The impact of colloidal alloy NCs on charge separation and interesting photophysical properties was recapitulated via the steady-state and time-resolved photoluminescence (PL) and femtosecond transient absorption spectroscopic techniques. Finally, the prolonged lifetime and extent of charge separation for these hybrid NCs (or the composites) assisted in the development of a better light harvester as compared to the case of their pure counterparts.

Ternary Metal Chalcogenides: Into the Exciton and Biexciton Dynamics

Intra-band-gap state-induced low-toxicity colloidal I-III-VI ternary metal chalcogenide nanocrystals (NCs) have emerged as promising alternatives to the toxic Cd- and Pb-chalcogenides for different optoelectronic and bioimaging applications. In this Perspective, we provide the primary understanding of the intra-band-gap state-induced photoluminescence (PL) of I-III-VI NCs, specifically CuInS₂ and AgInS₂, as a function of particle size and composition and correlated with time-resolved PL measurements. The intra-band-gap state-induced ultrafast exciton and biexciton dynamics are discussed in detail to unravel the subpicosecond carrier relaxation dynamics through transient absorption measurement. Furthermore, ultrafast dissociation of the biexciton on Au@CuInS₂ hybrid NCs has been revealed to be due to the presence of Au, which has direct relevance to the improvement of the solar cell efficiency. The proper fundamental insight of the ultrafast exciton and biexciton dynamics of these materials will enable utilization of ternary metal chalcogenides in photovoltaic as well as light-emitting devices.

MOF-Derived Co,N Codoped Carbon/Ti Mesh Counter Electrode for High-Efficiency Quantum Dot Sensitized Solar Cells

Carbon supported on titanium mesh electrodes has been recognized as the best performing counter electrodes (CEs) in quantum dot sensitized solar cells (QDSCs). Herein, layered double hydroxides (LDHs) are applied as a scaffold template for the growth of cobalt-zeolite-imidazole framework (ZIF-67) crystals, and micrometer-sized Co,N codoped porous carbon materials (Co,N-C) are obtained through a carbonization process. The as-prepared Co,N-C exhibits favorable features for electrocatalytic reduction of polysulfide, including a high surface area of 491.36 m²/g, highly effective active sites, and a hierarchical micro/mesoporous structure. Due to the large particle size, the obtained Co,N-C can couple with a Ti mesh substrate for the fabrication of high-performance Co,N-C/Ti CEs for QDSCs. As a result, the corresponding QDSCs exhibit an average efficiency of 13.55% (J_sc = 25.93 mA/cm², V_oc = 0.778 V, FF = 0.672), which is a 10.5% enhancement compared to the previous best result from the N-doped mesoporous carbon counterpart.

The interparticle distance limit for multiple exciton dissociation in PbS quantum dot solid films

Understanding the behaviour of multiple exciton dissociation in quantum dot (QD) solid films is of fundamental interest and paramount importance for improving the performance of quantum dot solar cells (QDSCs). Unfortunately, the charge transfer behaviour of photogenerated multiple exciton in QD solid films is not clear to date. Herein, we systematically investigate the multiple exciton charge transfer behaviour in PbS QD solid films by using ultrafast transient absorption spectroscopy. We observe that the multiple exciton charge transfer rate within QD ensembles is exponentially enhanced as the interparticle distance between the QDs decreases. Biexciton and triexciton dissociation between adjacent QDs occurs via a charge transfer tunneling effect just like single exciton, and the charge tunneling constants of the single exciton (β₁: 0.67 ± 0.02 nm^-1), biexciton (β₂: 0.68 ± 0.05 nm^-1) and triexciton (β₃: 0.71 ± 0.01 nm^-1) are obtained. More importantly, for the first time, the interparticle distance limit (≤4.3 nm) for multiple exciton charge transfer between adjacent QDs is found for the extraction of multiple excitons rapidly before the occurrence of Auger recombination. This result points out a vital and necessary condition for the use of multiple excitons produced in PbS QD films, especially for their applications in QDSCs.

Infrared Quantum Dots: Progress, Challenges, and Opportunities

Infrared technologies provide tremendous value to our modern-day society. The need for easy-to-fabricate, solution-processable, tunable infrared active optoelectronic materials has driven the development of infrared colloidal quantum dots, whose band gaps can readily be tuned by dimensional constraints due to the quantum confinement effect. In this Perspective, we summarize recent progress in the development of infrared quantum dots both as infrared light emitters ( e.g., in light-emitting diodes, biological imaging, etc.) as well as infrared absorbers ( e.g., in photovoltaics, solar fuels, photon up-conversion, etc.), focusing on how fundamental breakthroughs in synthesis, surface chemistry, and characterization techniques are facilitating the implementation of these nanostructures into exploratory device architectures as well as in emerging applications. We discuss the ongoing challenges and opportunities associated with infrared colloidal quantum dots.

Impact of FRET between Molecular Aggregates and Quantum Dots

Energy transfer has been employed in third-generation solar cells for the conversion of light into electrical energy. Long-range nonradiative energy transfer from semiconductor quantum dots (QDs) to fluorophores has been demonstrated by using CdS QDs and thiophene-BODIPY (boron dipyrromethene, abbreviated as TG2). TG2 shows a broad photoluminescence (PL) spectrum, which varies with concentration. At very low concentrations, monomeric units are present; then, upon increasing the concentration, these monomers form a mixed (J-/H-)aggregated state. Energy transfer between the CdS QDs and TG2 was confirmed by separately investigating the interactions between CdS and the monomer of TG2 and between CdS and the aggregated states of TG2. Size-dependent PL quenching confirmed that nonradiative Förster resonance energy transfer (FRET) from photoexcited CdS QDs to the J-aggregate state of TG2 was the major energy-relaxation channel, which occurred on the timescale of hundreds of fs. These results have broad applications in the field of light harvesting based on the assembly of molecular aggregates.

Quantum cutting using organic molecules

Ab initio based study of organic molecular based quantum cutting with predicted efficiency of 1.2, and proposition of design criteria.

Photoluminescence Flickering and Blinking of Single CsPbBr3 Perovskite Nanocrystals: Revealing Explicit Carrier Recombination Dynamics

To obtain an in-depth understanding of the dynamics and mechanism of carrier recombination in CsPbBr₃ nanocrystals (NCs), we have investigated the photoluminescence (PL) of this material at the single-particle level using the time-tagged-time-resolved method. The study reveals two distinct types of PL fluctuations of the NCs, which are assigned to flickering and blinking. The flickering is found to be due to excess surface trap on the NCs, and the flickering single particles are transformed into blinking ones with significant enhancement of PL intensity and stability on postsynthetic surface treatment. Intensity-correlated lifetime analysis of the PL time trace reveals both trap-mediated nonradiative band-edge carrier recombination and positive trion recombination in single NCs. Dynamical and statistical analysis suggests a diffusive nature of the trap states to be responsible for the PL intermittency of the system. These findings throw light on the nature of the trap states, reveal the manifestation of these trap states in PL fluctuation, and provide an effective way to control the dynamics of CsPbBr₃ NCs.