Hybrid gate dielectric materials for unconventional electronic circuitry

Surface polarization, field homogeneity, and dielectric breakdown in ordered and disordered nanodielectrics based on gold-polystyrene superlattices

Hybrid dielectrics were prepared from dispersions of nanoparticles with gold cores (diameters from 2.9 nm to 8.2 nm) and covalently bound thiol-terminated polystyrene shells (5000 Da and 11 000 Da) in toluene. Their microstructure was investigated with small angle X-ray scattering and transmission electron microscopy. The particles arranged in nanodielectric layers with either face-centered cubic or random packing, depending on the ligand length and core diameter. Thin film capacitors were prepared by spin-coating inks on silicon substrates, contacted with sputtered aluminum electrodes, and characterized with impedance spectroscopy between 1 Hz and 1 MHz. The dielectric constants were dominated by polarization at the gold-polystyrene interfaces that we could precisely tune via the core diameter. There was no difference in the dielectric constant between random and supercrystalline particle packings, but the dielectric losses depended on the layer structure. A model that combines Maxwell-Wagner-Sillars theory and percolation theory described the relationship of the specific interfacial area and the dielectric constant quantitatively. The electric breakdown of the nanodielectric layers sensitively depended on particle packing. A highest breakdown field strength of 158.7 MV m^-1 was found for the sample with 8.2 nm cores and short ligands that had a face-centered cubic structure. Breakdown apparently is initiated at the microscopic maxima of the electric field that depends on particle packing. The relevance of the results for industrially produced devices was demonstrated on inkjet printed thin film capacitors with an area of 0.79 mm² on aluminum coated PET foils that retained their capacity of 1.24 ± 0.01 nF@10 kHz during 3000 bending cycles.

Molecular-Switch-Embedded Solution-Processed Semiconductors

Recent improvements in the performance of solution-processed semiconductor materials and optoelectronic devices have shifted research interest to the diversification/advancement of their functionality. Embedding a molecular switch capable of transition between two or more metastable isomers by light stimuli is one of the most straightforward and widely accepted methods to potentially realize the multifunctionality of optoelectronic devices. A molecular switch embedded in a semiconductor can effectively control various parameters such as trap-level, dielectric constant, electrical resistance, charge mobility, and charge polarity, which can be utilized in photoprogrammable devices including transistors, memory, and diodes. This review classifies the mechanism of each optoelectronic transition driven by molecular switches regardless of the type of semiconductor material or molecular switch or device. In addition, the basic characteristics of molecular switches and the persisting technical/scientific issues corresponding to each mechanism are discussed to help researchers. Finally, interesting yet infrequently reported applications of molecular switches and their mechanisms are also described.

Host-guest interaction aided Zinc carry and delivery by ESIPT active 2-(2'-hydroxyphenyl)benzoxazole

The effect of solvents and supramolecular hosts on the binding of metal ion with an excited state intramolecular proton transfer (ESIPT) active fluorophore 2-(2'-hydroxyphenyl)benzoxazole (HPBO) are investigated to scrutinize a possible metal ion carry and delivery system. The fluorophore forms strong fluorescent complex with Zn²⁺ ion. In aqueous medium, β-cyclodextrin (β-CD) breaks the HPBO-Zn²⁺ complex and encapsulate the freed fluorophore. Hence, the initially blocked ESIPT process is restored by forming an inclusion complex with the host molecules. However, in dimethyl sulphoxide (DMSO), β-CD does not break the complex. But cucurbit[7]uril (CB-7) breaks the complex in both DMSO and water. The tuned emission characteristics are considered for constructing different molecular logic gates. BUFFER, NOT, PASS, IMPLICATION and INHIBIT logic operations are substantiated based on Zn²⁺, CB-7 and β-CD response.

Gold Nanoparticles as Effective ion Traps in Poly(dimethylsiloxane) Cross-Linked by Metal-Ligand Coordination

At this time, the development of advanced elastic dielectric materials for use in organic devices, particularly in organic field-effect transistors, is of considerable interest to the scientific community. In the present work, flexible poly(dimethylsiloxane) (PDMS) specimens cross-linked by means of ZnCl₂-bipyridine coordination with an addition of 0.001 wt. %, 0.0025 wt. %, 0.005 wt. %, 0.04 wt. %, 0.2 wt. %, and 0.4 wt. % of gold nanoparticles (AuNPs) were prepared in order to understand the effect of AuNPs on the electrical properties of the composite materials formed. The broadband dielectric spectroscopy measurements revealed one order of magnitude decrease in loss tangent, compared to the coordinated system, upon an introduction of 0.001 wt. % of AuNPs into the polymeric matrix. An introduction of AuNPs causes damping of conductivity within the low-temperature range investigated. These effects can be explained as a result of trapping the Cl⁻ counter ions by the nanoparticles. The study has shown that even a very low concentration of AuNPs (0.001 wt. %) still brings about effective trapping of Cl⁻ counter anions, therefore improving the dielectric properties of the investigated systems. The modification proposed reveals new perspectives for using AuNPs in polymers cross-linked by metal-ligand coordination systems.

Molecular Engineering of 2D Nanomaterial Field-Effect Transistor Sensors: Fundamentals and Translation across the Innovation Spectrum

Over the last decade, 2D layered nanomaterials have attracted significant attention across the scientific community due to their rich and exotic properties. Various nanoelectronic devices based on these 2D nanomaterials have been explored and demonstrated, including those for environmental applications. Here, the fundamental attributes of 2D layered nanomaterials for field-effect transistor (FET) sensors and tunneling FET (TFET) sensors, which provide versatile detection of water contaminants such as heavy-metal ions, bacteria, nutrients, and organic pollutants, are discussed. The major challenges and opportunities are also outlined for designing and fabricating 2D nanomaterial FET/TFET sensors with superior performance. Translation of these FET/TFET sensors from fundamental research to applied technology is illustrated through a case study on graphene-based real-time FET water sensors. A second case study centers on large-scale sensor networks for water-quality monitoring to enable intelligent drinking water and river-water systems. Overall, 2D nanomaterial FET sensors have significant potential for enabling a human-centered intelligent water system that can likely be applied to other precarious water supplies around the globe.

Large-Area Crystalline Zeolitic Imidazolate Framework Thin Films

We report that continuous MOF films with highly controlled thickness (from 44 to 5100 nm) can be deposited over length scales greater than 80 centimeters by a facile, fast, and cost-effective spray-coating method. Such success relies on our discovery of unprecedented perfectly dispersed colloidal solutions consisting of amorphous MOF nanoparticles, which we adopted as precursors that readily converted to the crystalline films upon low-temperature in situ heating. The colloidal solutions allow for the fabrication of compact and uniform MOF films on a great deal of substrates such as fluorine-doped tin oxide, glass, SiO₂ , Al₂ O₃ , Si, Cu, and even flexible polycarbonate, widening their technological applications where substrates are essential. Despite the present work focuses on the fabrication of uniform cobalt-(2-methylimidazole)₂ and zinc-(2-methylimidazole)₂ films, our findings mark a great possibility in producing other high-quality MOF thin films on a large scale.

Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors

Metal oxide semiconductors, such as amorphous indium gallium zinc oxide (a-IGZO), have made impressive strides as alternatives to amorphous silicon for electronics applications. However, to achieve the full potential of these semiconductors, compatible unconventional gate dielectric materials must also be developed. To this end, solution-processable self-assembled nanodielectrics (SANDs) composed of structurally well-defined and durable nanoscopic alternating organic (e.g., stilbazolium) and inorganic oxide (e.g., ZrO_x and HfO_x) layers offer impressive capacitances and low processing temperatures (T ≤ 200 °C). While SANDs have been paired with diverse semiconductors and have yielded excellent device metrics, they have never been implemented in the most technologically relevant top-gate thin-film transistor (TFT) architecture. Here, we combine solution-processed a-IGZO with solution-processed four-layer Hf-SAND to fabricate top-gate TFTs, which exhibit impressive electron mobilities (μ_SAT = 19.4 cm² V^-1 s^-1) and low threshold voltages (V_th = 0.83 V), subthreshold slopes (SS = 293 mV/dec), and gate leakage currents (10^-10 A) as well as high bias stress stability.

Ultraviolet Light-Densified Oxide-Organic Self-Assembled Dielectrics: Processing Thin-Film Transistors at Room Temperature

Low-temperature, solution-processable, high-capacitance, and low-leakage gate dielectrics are of great interest for unconventional electronics. Here, we report a near room temperature ultraviolet densification (UVD) methodology for realizing high-performance organic-inorganic zirconia self-assembled nanodielectrics (UVD-ZrSANDs). These UVD-ZrSAND multilayers are grown from solution in ambient, densified by UV radiation, and characterized by X-ray reflectivity, atomic force microscopy, X-ray photoelectron spectroscopy, and capacitance measurements. The resulting UVD-ZrSAND films exhibit large capacitances of >700 nF/cm² and low leakage current densities of <10^-7 A/cm², which rival or exceed those synthesized by traditional thermal methods. Both the p-type organic semiconductor pentacene and the n-type metal oxide semiconductor In₂O₃ were used to investigate UVD-ZrSANDs as the gate dielectric in thin-film transistors, affording mobilities of 0.58 and 26.21 cm²/(V s), respectively, at a low gate voltage of 2 V. These results represent a significant advance in fabricating ultra-thin high-performance dielectrics near room temperature and should facilitate their integration into diverse electronic technologies.

Thiophene-phenylquinazoline probe for selective ratiometric fluorescence and visual detection of Fe(iii) and turn-off fluorescence for I- and its applications

A 2,5-bis(4-phenylquinazolin-2-yl)thiophene (BQT) probe is designed, synthesized and explored for selective ratiometric fluorescence and visual detection of Fe³⁺ and as a turn-off fluorescence probe for I^- anion. BQT is colorless and has blue emission in CH₃CN solution. BQT selectively complexes with Fe³⁺, turns its solution from colorless to greenish yellow and enables the ratiometric sensing of Fe³⁺ with limit of detection (LOD) and limit of quantitation (LOQ) of 2 × 10^-8 M and 6.1 × 10^-8 M, respectively. Binding constant of BQT with Fe³⁺ is found to be 4.1 × 10^-4 M^-1. BQT is also able to sense I^- anion present in aqueous solution by selectively turning colorless to yellow and fluorescence quenching with a LOD of 1.7 × 10^-7 M and LOQ of 5.2 × 10^-7 M. BQT sensing ability is not influenced by the presence of other metal ions and anions in the vicinity. The BQT-Fe³⁺ complex is thoroughly characterized using MALDI-TOF, NMR and Job's plot. A reversibility experiment with EDTA suggests BQT is a reversible fluorescent chemosensor for Fe³⁺ ions. The spectroscopic data of BQT and its complexes are employed to construct a field test kit for qualitative analysis and INHIBIT logic gate.

Simultaneous Suppression of π- and σ-Transmission in π-Conjugated Molecules

Molecular dielectric materials require ostensibly conflicting requirements of high polarizability and low conductivity. As previous efforts toward molecular insulators focused on saturated molecules, it remains an open question whether π- and σ-transport can be simultaneously suppressed in conjugated systems. Here, we demonstrate that there are conjugated molecules where the σ-transmission is suppressed by destructive σ-interference, while the π-transmission can be suppressed by a localized disruption of conjugation. Using density functional theory, we study the Landauer transmission and ballistic current density, which allow us to determine how the transmission is affected by various structural changes in the molecule. We find that in para-linked oligophenyl rings the σ-transmission can be suppressed by changing the remaining hydrogens to methyl groups due to the inherent gauche-like structure of the carbon backbone within a benzene ring, similar to what was previously seen in saturated systems. At the same time, the methyl groups fulfill a dual purpose as they modulate the twist angle between neighboring phenyl rings. When neighboring rings are orthogonal to each other, the transmission through both π- and σ-systems is effectively suppressed. Alternatively, breaking conjugation in a single phenyl ring by saturating two carbons atoms with two methyl substituents on each carbon, results in suppressed π- and σ-transport independent of dihedral angle. These two strategies demonstrate that methyl-substituted oligophenyls are promising candidates for the development of molecular dielectric materials.

Cross-Plane Thermal Conductance of Phosphonate-Based Self-Assembled Monolayers and Self-Assembled Nanodielectrics

Self-assembled nanodielectrics (SANDs) consist of alternating layers of polarized phosphonate-functionalized azastibazolium π-electron (PAE) and high-k dielectric metal oxide (ZrO₂ or HfO_x) films. SANDs are desirable gate dielectrics materials for thin-film transistor applications because of their excellent properties such as low-temperature fabrication, large dielectric strength, and large capacitance. In this paper, we investigate the cross-plane thermal boundary conductance of SANDs using the frequency domain thermoreflectance (FDTR) technique. First, we characterize the thermal conductance of PAE self-assembled monolayers (SAMs), inverted-PAE (IPAE) SAMs, and mixed PAE-IPAE SAMs, sandwiched between thin gold and silica (SiO₂) films at the top and bottom surfaces. Next, we quantify the thermal conductance of SAND-n with different numbers (n) of PAE-ZrO₂ layers and thicknesses ranging between 4.7 and 11.3 nm. From the FDTR measurements, we observe that the thermal boundary conductance of the SAMs can be tuned between 42.1 ± 4.6 MW/(m² K) and 52.4 ± 2.5 MW/(m² K), based on the relative density of the PAE and IPAE chromophores. In the SAND-n samples, we observe a monotonic decrease in the thermal conductance with increasing n. We use the measured thermal conductance data in a series resistance model to estimate a thermal interface conductance of 695 MW/(m² K) for the contact between the PAE chromophore and the zirconium dioxide films, which is an order of magnitude larger than the SAMs. We attribute the improved thermal conductance to stronger adhesion between the PAE chromophore and the zirconium dioxide films, as compared to the weakly bonded SAMs to the gold and silicon dioxide films.

Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application

The high dielectric constant ZrO2, as one of the most promising gate dielectric materials for next generation semiconductor device, is expected to be introduced as a new high k dielectric layer to replace the traditional SiO2 gate dielectric. The electrical properties of ZrO2 films prepared by various deposition methods and the main methods to improve their electrical properties are introduced, including doping of nonmetal elements, metal doping design of pseudo-binary alloy system, new stacking structure, coupling with organic materials and utilization of crystalline ZrO2 as well as optimization of low-temperature solution process. The applications of ZrO2 and its composite thin film materials in metal oxide semiconductor field effect transistor (MOSFET) and thin film transistors (TFTs) with low power consumption and high performance are prospected.

Hybrid Polymer/Metal Oxide Thin Films for High Performance, Flexible Transistors

Metal oxides (MOs) have garnered significant attention in a variety of research fields, particularly in flexible electronics such as wearable devices, due to their superior electronic properties. Meanwhile, polymers exhibit excellent mechanical properties such as flexibility and durability, besides enabling economic solution-based fabrication. Therefore, MO/polymer nanocomposites are excellent electronic materials for use in flexible electronics owing to the confluence of the merits of their components. In this article, we review recent developments in the synthesis and fabrication techniques for MO/polymer nanocomposite-based flexible transistors. In particular, representative MO/polymer nanocomposites for flexible and transparent channel layers and gate dielectrics are introduced and their electronic properties-such as mobilities and dielectric constant-are presented. Finally, we highlight the advances in interface engineering and its influence on device electronics.

Interface Engineering in Organic Field-Effect Transistors: Principles, Applications, and Perspectives

Heterogeneous interfaces that are ubiquitous in optoelectronic devices play a key role in the device performance and have led to the prosperity of today's microelectronics. Interface engineering provides an effective and promising approach to enhancing the device performance of organic field-effect transistors (OFETs) and even developing new functions. In fact, researchers from different disciplines have devoted considerable attention to this concept, which has started to evolve from simple improvement of the device performance to sophisticated construction of novel functionalities, indicating great potential for further applications in broad areas ranging from integrated circuits and energy conversion to catalysis and chemical/biological sensors. In this review article, we provide a timely and comprehensive overview of current efficient approaches developed for building various delicate functional interfaces in OFETs, including interfaces within the semiconductor layers, semiconductor/electrode interfaces, semiconductor/dielectric interfaces, and semiconductor/environment interfaces. We also highlight the major contributions and new concepts of integrating molecular functionalities into electrical circuits, which have been neglected in most previous reviews. This review will provide a fundamental understanding of the interplay between the molecular structure, assembly, and emergent functions at the molecular level and consequently offer novel insights into designing a new generation of multifunctional integrated circuits and sensors toward practical applications.

Covalently Bonded Pillared Layered Bromoplumbate with High Thermal Stability: High Capacitance Gain after Photoinduced Electron Transfer

Improving the stability and photoelectric properties are current aims in the field of inorganic-organic hybrid lead halides. In this work, a new covalently bonded pillared layered bromoplumbate, [Pb₃Br₆(CV)]_n, was prepared using a photoactive zwitterion viologen, N,N'-4,4'-bipyridiniodipropionate (CV), as a ligand. It has a high thermal stability in air and shows a remarkable increase of capacitance after photoinduced electron transfer (PIET). The observed dielectric switch ratio of ∼689% at 3 kHz exceeded all reported values at room temperature for switchable dielectric materials. The capacitance gain was derived from the redistribution of electrons after PIET from the lead-halide layer to organic π-aggregates, so that the activation energy of hopping polarizability was significantly reduced.

The Bicyclo[2.2.2]octane Motif: A Class of Saturated Group 14 Quantum Interference Based Single-Molecule Insulators

The electronic transmission through σ-conjugated molecules can be fully suppressed by destructive quantum interference, which makes them potential candidates for single-molecule insulators. The first molecule with clear suppression of the single-molecule conductance due to σ-interference was recently found in the form of a functionalized bicyclo[2.2.2]octasilane. Here we continue the search for potential single-molecule insulators based on saturated group 14 molecules. Using a high-throughput screening approach, we assess the electron transport properties of the bicyclo[2.2.2]octane class by systematically varying the constituent atoms between carbon, silicon, and germanium, thus exploring the full chemical space of 771 different molecules. The majority of the molecules in the bicyclo[2.2.2]octane class are found to be highly insulating molecules. Though the all-silicon molecule is a clear-cut case of σ-interference, it is not unique within its class and there are many potential molecules that we predict to be more insulating. The finding of this class of quantum interference based single-molecule insulators indicates that a broad range of highly insulating saturated group 14 molecules are likely to exist.

Novel Vapor-Phase Synthesis of Flexible, Homogeneous Organic-Inorganic Hybrid Gate Dielectric with sub 5 nm Equivalent Oxide Thickness

Organic-inorganic hybrid dielectrics have attracted considerable attention for improving both the dielectric constant ( k) and mechanical flexibility of the gate dielectric layer for emerging flexible and wearable electronics. However, conventional solution-based hybrid materials, such as nanocomposite and self-assembled nanodielectrics, have limitations in the dielectric quality when the thickness is deep-scaled, which is critical to realizing high-performance flexible devices. This study proposes a novel vapor-phase synthesis method to form an ultrathin, homogeneous, high- k organic-inorganic hybrid dielectric. A series of hybrid dielectrics is synthesized via initiated chemical vapor deposition (iCVD) in a one-step manner, where 2-hydroxyethyl methacrylate and trimethylaluminum are used as the monomer and inorganic precursor, respectively. The thickness and composition are effectively controlled to form a uniform, defect-free hybrid dielectric. As a result, the synthesized hybrid dielectric has a high- k value as high as 7 and exhibits a low leakage current density of less than 3 × 10^-7 A/cm² at 2 MV/cm, even with an equivalent oxide thickness of less than 5 nm. Furthermore, the dielectric layer shows exceptional chemical stability without any degradation in its dielectric performance and a smooth surface morphology. The dielectric layer also has good flexibility, maintaining its excellent dielectric performance under a tensile strain of up to 2.6%. Organic thin-film transistors with the developed hybrid dielectric as the gate dielectric achieved hysteresis-free transfer characteristics, with an operating voltage of up to 4 V and excellent mechanical flexibility as well. The hybrid dielectric synthesized via the iCVD process is a promising candidate for high-performance, low-power flexible electronics.

Self-Assembled Photochromic Molecular Dipoles for High-Performance Polymer Thin-Film Transistors

The development of high-performance multifunctional polymer-based electronic circuits is a major step toward future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed dielectric super-lattice structures with photochromic azobenzene molecules. These nanodielectrics possessing ionic, molecular, and atomic polarization are utilized in polymer thin-film transistors (TFTs) to realize high-performance electronics with a p-type field-effect mobility (μ_FET) exceeding 2 cm² V^-1 s^-1. A crossover in the transport mechanism from electrostatic dipolar disorder to ionic-induced disorder is observed in the transistor characteristics over a range of temperatures. The facile supramolecular design allows the possibility to optically control the extent of molecular and ionic polarization in the ultrathin nanodielectric. Thus, we demonstrate a 3-fold increase in the capacitance from 0.1 to 0.34 μF/cm², which results in a 200% increase in TFT channel current.

Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits

The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large-area electronics, particularly thin-film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High-permittivity (κ) oxide dielectrics are a key component for achieving low-voltage and high-performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO2 with high-κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low-cost devices, tremendous efforts have been devoted to vacuum-free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high-κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high-κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO2 is outlined. Recent achievements of solution-processed high-κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water-induced, self-combustion reaction, and energy-assisted post treatments, for the realization of flexible electronics and circuits are discussed.

High- k Gate Dielectrics for Emerging Flexible and Stretchable Electronics

Recent advances in flexible and stretchable electronics (FSE), a technology diverging from the conventional rigid silicon technology, have stimulated fundamental scientific and technological research efforts. FSE aims at enabling disruptive applications such as flexible displays, wearable sensors, printed RFID tags on packaging, electronics on skin/organs, and Internet-of-things as well as possibly reducing the cost of electronic device fabrication. Thus, the key materials components of electronics, the semiconductor, the dielectric, and the conductor as well as the passive (substrate, planarization, passivation, and encapsulation layers) must exhibit electrical performance and mechanical properties compatible with FSE components and products. In this review, we summarize and analyze recent advances in materials concepts as well as in thin-film fabrication techniques for high- k (or high-capacitance) gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductors. Since thin-film transistors (TFTs) are the key enablers of FSE devices, we discuss TFT structures and operation mechanisms after a discussion on the needs and general requirements of gate dielectrics. Also, the advantages of high- k dielectrics over low- k ones in TFT applications were elaborated. Next, after presenting the design and properties of high- k polymers and inorganic, electrolyte, and hybrid dielectric families, we focus on the most important fabrication methodologies for their deposition as TFT gate dielectric thin films. Furthermore, we provide a detailed summary of recent progress in performance of FSE TFTs based on these high- k dielectrics, focusing primarily on emerging semiconductor types. Finally, we conclude with an outlook and challenges section.

Measuring Dipole Inversion in Self-Assembled Nano-Dielectric Molecular Layers

A self-assembled nanodielectric (SAND) is an ultrathin film, typically with periodic layer pairs of high-k oxide and phosphonic-acid-based π-electron (PAE) molecular layers. IPAE, having a molecular structure similar to that of PAE but with an inverted dipole direction, has recently been developed for use in thin-film transistors. Here we report that replacing PAE with IPAE in SAND-based thin-film transistors induces sizable threshold and turn-on voltage shifts, indicating the flipping of the built-in SAND polarity. The bromide counteranion (Br^-) associated with the cationic stilbazolium portion of PAE or IPAE is of great importance, because its relative position strongly affects the electric dipole moment of the organic layer. Hence, a set of X-ray synchrotron measurements were designed and performed to directly measure and compare the Br^- distributions within the PAE and IPAE SANDs. Two trilayer SANDs, consisting of a PAE or IPAE layer sandwiched between an HfO_x and a ZrO_x layer, were deposited on the SiO_x surface of Si substrates or periodic Si/Mo multilayer substrates for X-ray reflectivity and X-ray standing wave measurements, respectively. Along with complementary DFT simulations, the spacings, elemental (Hf, Br, and Zr) distributions, molecular orientations, and Mulliken charge distributions of the PAE and IPAE molecules within each of the SAND trilayers were determined and correlated with the dipole inversion.

Extreme electron transport suppression in siloxane ring-based molecular devices

Siloxane ring-based molecular devices possess excessive transport suppression and size-dependent transport decay, based on an analysis of electronic coupling.

High-κ Samarium-Based Metal-Organic Framework for Gate Dielectric Applications

The self-assembly of a samarium-based metal-organic framework [Sm₂(bhc)(H₂O)₆]_n (1) in good yield was achieved by reacting Sm(NO₃)₃·6H₂O with benzenehexacarboxylic acid (bhc) in a mixture of H₂O-EtOH under hydrothermal conditions. A structural analysis showed that compound 1 crystallized in a space group of Pnmn and adopted a 3D structure with (4,8) connected nets. Temperature dependent dielectric measurements showed that compound 1 behaves as a high dielectric material with a high dielectric constant (κ = 45.1) at 5 kHz and 310 K, which is comparable to the values for some of the most commonly available dielectric inorganic metal oxides such as Sm₂O₃, Ta₂O₅, HfO₂, and ZrO₂. In addition, electrical measurements of 1 revealed an electrical conductivity of about 2.15 × 10^-7 S/cm at a frequency of 5 kHz with a low leakage current (I_leakage = 8.13 × 10^-12 Amm^-2). Dielectric investigations of the Sm-based MOF provide an effective path for the development of high dielectric materials in the future.

Chain Length Dependence of the Dielectric Constant and Polarizability in Conjugated Organic Thin Films

Dielectric materials are ubiquitous in optics, electronics, and materials science. Recently, there have been new efforts to characterize the dielectric performance of thin films composed of molecular assemblies. In this context, we investigate here the relationship between the polarizability of the constituent molecules and the film dielectric constant, using periodic density functional theory (DFT) calculations, for polyyne and saturated alkane chains. In particular, we explore the implication of the superlinear chain length dependence of the polarizability, a specific feature of conjugated molecules. We show and explain from DFT calculations and a simple depolarization model that this superlinearity is attenuated by the collective polarization. However, it is not completely suppressed. This confers a very high sensitivity of the dielectric constant to the thin film thickness. This latter can increase by a factor of 3-4 at reasonable coverages, by extending the molecular length. This significantly limits the decline of the thin film capacitance with the film thickness. Therefore, the conventional fit of the capacitance versus thickness is not appropriate to determine the dielectric constant of the film. Finally, we show that the failures of semilocal approximations of the exchange-correlation functional lead to a very significant overestimation of this effect.

Multifunctional Hybrid Multilayer Gate Dielectrics with Tunable Surface Energy for Ultralow-Power Organic and Amorphous Oxide Thin-Film Transistors

For large-area, printable, and flexible electronic applications using advanced semiconductors, novel dielectric materials with excellent capacitance, insulating property, thermal stability, and mechanical flexibility need to be developed to achieve high-performance, ultralow-voltage operation of thin-film transistors (TFTs). In this work, we first report on the facile fabrication of multifunctional hybrid multilayer gate dielectrics with tunable surface energy via a low-temperature solution-process to produce ultralow-voltage organic and amorphous oxide TFTs. The hybrid multilayer dielectric materials are constructed by iteratively stacking bifunctional phosphonic acid-based self-assembled monolayers combined with ultrathin high-k oxide layers. The nanoscopic thickness-controllable hybrid dielectrics exhibit the superior capacitance (up to 970 nF/cm²), insulating property (leakage current densities <10^-7 A/cm²), and thermal stability (up to 300 °C) as well as smooth surfaces (root-mean-square roughness <0.35 nm). In addition, the surface energy of the hybrid multilayer dielectrics are easily changed by switching between mono- and bifunctional phosphonic acid-based self-assembled monolayers for compatible fabrication with both organic and amorphous oxide semiconductors. Consequently, the hybrid multilayer dielectrics integrated into TFTs reveal their excellent dielectric functions to achieve high-performance, ultralow-voltage operation (< ± 2 V) for both organic and amorphous oxide TFTs. Because of the easily tunable surface energy, the multifunctional hybrid multilayer dielectrics can also be adapted for various organic and inorganic semiconductors, and metal gates in other device configurations, thus allowing diverse advanced electronic applications including ultralow-power and large-area electronic devices.

Bio-Inspired Fluoro-polydopamine Meets Barium Titanate Nanowires: A Perfect Combination to Enhance Energy Storage Capability of Polymer Nanocomposites

Rapid evolution of energy storage devices expedites the development of high-energy-density materials with excellent flexibility and easy processing. The search for such materials has triggered the development of high-dielectric-constant (high-k) polymer nanocomposites. However, the enhancement of k usually suffers from sharp reduction of breakdown strength, which is detrimental to substantial increase of energy storage capability. Herein, the combination of bio-inspired fluoro-polydopamine functionalized BaTiO₃ nanowires (NWs) and a fluoropolymer matrix offers a new thought to prepare polymer nanocomposites. The elaborate functionalization of BaTiO₃ NWs with fluoro-polydopamine has guaranteed both the increase of k and the maintenance of breakdown strength, resulting in significantly enhanced energy storage capability. The nanocomposite with 5 vol % functionalized BaTiO₃ NWs discharges an ultrahigh energy density of 12.87 J cm^-3 at a relatively low electric field of 480 MV m^-1, more than three and a half times that of biaxial-oriented polypropylene (BOPP, 3.56 J cm^-3 at 600 MV m^-1). This superior energy storage capability seems to rival or exceed some reported advanced nanoceramics-based materials at 500 MV m^-1. This new strategy permits insights into the construction of polymer nanocomposites with high energy storage capability.

Flexible and low-voltage organic phototransistors

A stripping procedure was demonstrated to prepare ultra-smooth gate dielectric for flexible and low-voltage organic phototransistors.

Dually crosslinkable SiO2@polysiloxane core–shell nanoparticles for flexible gate dielectric insulators

A hybrid gate dielectric material for flexible OTFT is developed by using core–shell nanoparticles (SiO₂@PSR_XL) where the core and the shell consist of silica nanoparticles and polysiloxane resin, respectively.

Small Molecule-Assisted Exfoliation of Layered Zirconium Phosphate Nanoplatelets by Ionic Liquids

Exfoliation of layered inorganic nanomaterials into single-layered sheets has been widely interested in materials chemistry and composite fabrication. Here, we report the exfoliation of layered zirconium phosphate nanoplatelets by using small molecule intercalating agents in ionic liquids, which opens a new platform for fabricating single-layered inorganic materials from synthetic layered compounds.

Organic/Inorganic Nano-hybrids with High Dielectric Constant for Organic Thin Film Transistor Applications

The organic material soluble polyimide (PI) and organic-inorganic hybrid PI-barium titanate (BaTiO₃) nanoparticle dielectric materials (IBX, where X is the concentration of BaTiO₃ nanoparticles in a PI matrix) were successfully synthesized through a sol-gel process. The effects of various BaTiO₃ contents on the hybrid film performance and performance optimization were investigated. Furthermore, pentacene-based organic thin film transistors (OTFTs) with PI-BaTiO₃/polymethylmethacrylate or cyclic olefin copolymer (COC)-modified gate dielectrics were fabricated and examined. The hybrid materials showed effective dispersion of BaTiO₃ nanoparticles in the PI matrix and favorable thermal properties. X-ray diffraction patterns revealed that the BaTiO₃ nanoparticles had a perovskite structure. The hybrid films exhibited high formability and planarity. The IBX hybrid dielectric films exhibited tunable insulating properties such as the dielectric constant value and capacitance in ranges of 4.0-8.6 and 9.2-17.5 nF cm^-2, respectively. Adding the modified layer caused the decrease of dielectric constant values and capacitances. The modified dielectric layer without cross-linking displayed a hydrophobic surface. The electrical characteristics of the pentacene-based OTFTs were enhanced after the surface modification. The optimal condition for the dielectric layer was 10 wt% hybrid film with the COC-modified layer; moreover, the device exhibited a threshold voltage of 0.12 V, field-effect mobility of 4.32 × 10^-1 cm² V^-1 s^-1, and on/off current of 8.4 × 10⁷.

Integration of metal-organic frameworks into an electrochemical dielectric thin film for electronic applications

The integration of porous metal-organic frameworks onto the surface of materials, for use as functional devices, is currently emerging as a promising approach for gas sensing and flexible displays. However, research focused on potential applications in electronic devices is in its infancy. Here we present a facile strategy by which interpenetrated, crystalline metal-organic framework films are deposited onto conductive metal-plate anodes via in situ temperature-controlled electrochemical assembly. The nanostructure of the surface as well as the thickness and uniformity of the film are well controlled. More importantly, the resulting films exhibit enhanced dielectric properties compared to traditional inorganic or organic gate dielectrics. This study demonstrates the successful implementation of the rational design of metal-organic framework thin films on conductive supports with high-performance dielectric properties.

The integration of porous metal-organic frameworks into devices for electronic applications is in its infancy. Here, the authors deposit metal-organic framework films onto conductive metal plate electrodes, and show that the resulting films exhibit enhanced dielectric properties.

Tunable Radiation Response in Hybrid Organic-Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics

Solution-processed semiconductor and dielectric materials are attractive for future lightweight, low-voltage, flexible electronics, but their response to ionizing radiation environments is not well understood. Here, we investigate the radiation response of graphene field-effect transistors employing multilayer, solution-processed zirconia self-assembled nanodielectrics (Zr-SANDs) with ZrOx as a control. Total ionizing dose (TID) testing is carried out in situ using a vacuum ultraviolet source to a total radiant exposure (RE) of 23.1 μJ/cm(2). The data reveal competing charge density accumulation within and between the individual dielectric layers. Additional measurements of a modified Zr-SAND show that varying individual layer thicknesses within the gate dielectric tuned the TID response. This study thus establishes that the radiation response of graphene electronics can be tailored to achieve a desired radiation sensitivity by incorporating hybrid organic-inorganic gate dielectrics.

A new nanocrystalline inorganic–organic hybrid exhibiting semiconducting properties and applications

A new nanocrystalline inorganic–organic hybrid semiconductor [(BV)₂(Ag₅Br₉)]_n (1) with an intriguing windmill-like 1-D [Ag₅Br₉]_nⁿ⁻ polymeric chain was assembled. Great efforts were devoted to investigate its semiconducting properties and applications.

Solution-Processed Self-Assembled Nanodielectrics on Template-Stripped Metal Substrates

The coupling of hybrid organic-inorganic gate dielectrics with emergent unconventional semiconductors has yielded transistor devices exhibiting record-setting transport properties. However, extensive electronic transport measurements on these high-capacitance systems are often convoluted with the electronic response of the semiconducting silicon substrate. In this report, we demonstrate the growth of solution-processed zirconia self-assembled nanodielectrics (Zr-SAND) on template-stripped aluminum substrates. The resulting Zr-SAND on Al structures leverage the ultrasmooth (r.m.s. roughness <0.4 nm), chemically uniform nature of template-stripped metal substrates to demonstrate the same exceptional electronic uniformity (capacitance ∼700 nF cm(-2), leakage current <1 μA cm(-2) at -2 MV cm(-1)) and multilayer growth of Zr-SAND on Si, while exhibiting superior temperature and voltage capacitance responses. These results are important to conduct detailed transport measurements in emergent transistor technologies featuring SAND as well as for future applications in integrated circuits or flexible electronics.

Layer-by-layer grown scalable redox-active ruthenium-based molecular multilayer thin films for electrochemical applications and beyond

Here we report the first study on the electrochemical energy storage application of a surface-immobilized ruthenium complex multilayer thin film with anion storage capability. We employed a novel dinuclear ruthenium complex with tetrapodal anchoring groups to build well-ordered redox-active multilayer coatings on an indium tin oxide (ITO) surface using a layer-by-layer self-assembly process. Cyclic voltammetry (CV), UV-Visible (UV-Vis) and Raman spectroscopy showed a linear increase of peak current, absorbance and Raman intensities, respectively with the number of layers. These results indicate the formation of well-ordered multilayers of the ruthenium complex on ITO, which is further supported by the X-ray photoelectron spectroscopy analysis. The thickness of the layers can be controlled with nanometer precision. In particular, the thickest layer studied (65 molecular layers and approx. 120 nm thick) demonstrated fast electrochemical oxidation/reduction, indicating a very low attenuation of the charge transfer within the multilayer. In situ-UV-Vis and resonance Raman spectroscopy results demonstrated the reversible electrochromic/redox behavior of the ruthenium complex multilayered films on ITO with respect to the electrode potential, which is an ideal prerequisite for e.g. smart electrochemical energy storage applications. Galvanostatic charge-discharge experiments demonstrated a pseudocapacitor behavior of the multilayer film with a good specific capacitance of 92.2 F g(-1) at a current density of 10 μA cm(-2) and an excellent cycling stability. As demonstrated in our prototypical experiments, the fine control of physicochemical properties at nanometer scale, relatively good stability of layers under ambient conditions makes the multilayer coatings of this type an excellent material for e.g. electrochemical energy storage, as interlayers in inverted bulk heterojunction solar cell applications and as functional components in molecular electronics applications.