Activation of surface hydroxyl groups by modification of H-terminated Si(111) surfaces

Enhanced Deposition Selectivity of High-k Dielectrics by Vapor Dosing and Selective Removal of Phosphonic Acid Inhibitors

Area-selective atomic layer deposition (AS-ALD), which provides a bottom-up nanofabrication method with atomic-scale precision, has attracted a great deal of attention as a means to alleviate the problems associated with conventional top-down patterning. In this study, we report a methodology for achieving selective deposition of high-k dielectrics by surface modification through vapor-phase functionalization of octadecylphosphonic acid (ODPA) inhibitor molecules accompanied by post-surface treatment. A comparative evaluation of deposition selectivity of ZrO2 thin films deposited with the O2 and O3 reactants was performed on SiO2, TiN, and W substrates, and we confirmed that high enough deposition selectivity over 10 nm can be achieved even after 200 cycles of ALD with the O2 reactant. Subsequently, the electrical properties of ZrO2 films deposited with O2 and O3 reactants were investigated with and without post-deposition treatment. We successfully demonstrated that high-quality ZrO2 thin films with high dielectric constants and stable antiferroelectric properties can be produced by subjecting the films to ozone, which can eliminate carbon impurities within the films. We believe that this work provides a new strategy to achieve highly selective deposition for AS-ALD of dielectric on dielectric (DoD) applications toward upcoming bottom-up nanofabrication.

Enhancing the interfacial thermal conductance of Si/PVDF by strengthening atomic couplings

Thermal transport across inorganic/organic interfaces attracts interest from both academia and industry due to their wide applications in flexible electronics, etc. Here, the interfacial thermal conductance of inorganic/organic interfaces consisting of silicon and polyvinylidene fluoride is systematically investigated using molecular dynamics simulations. Interestingly, it is demonstrated that a modified silicon surface with hydroxyl groups can drastically enhance the conductance by 698%. These results are elucidated based on interfacial couplings and lattice dynamics insights. This study not only provides feasible strategies to effectively modulate the interfacial thermal conductance of inorganic/organic interfaces but also deepens the understanding of the fundamental physics underlying phonon transport across interfaces.

Grafting of Organophosphonic Acid Monolayers on Hydrogen-Terminated Silicon Surface and Secondary Functionalization in Supercritical Carbon Dioxide Media

The monolayer grafting on the oxide-free Si surface is challenging due to vulnerability of the surface against oxide formation in an ambient atmosphere. Most of the conventional studies focused on organic solvent-based chemistry and solvent and substrate interfaces, and residual solvents after the monolayer grafting play a key role in producing the highly stable monolayers. CO2 in its supercritical state (SCCO2) provides an elegant engineering solution for the problem faced as it can be used as inert processing environment and as carrier fluid for monolayer grafting taking up the role of organic solvents. In this work, monolayers of alkyl organophosphonic acids (OPAs) and functional OPAs were grafted on hydrogen-terminated oxide-free Si surfaces using the SCCO2 process. Grafted monolayers were physically and chemically characterized to verify the successful monolayer formation and determine the nature of the covalent binding configuration on the surface. To broaden the prospects of practical utility of the process and the OPA monolayer, the (3-bromopropyl)phosphonic acid (BPPA) monolayer was demonstrated to undergo secondary functionalization by terminal group substitution to convert the Br terminal group to the OH terminal group and secondary monolayer grafting to assemble 4-fluorothiophenol on top of the BPPA monolayer. The ability of monolayers to sustain secondary functionalization processing qualitatively hints toward ordered and stable monolayers of OPAs. The developed SCCO2 process in this work presents a single-step, green, and scalable method to graft the OPA monolayer on oxide-free Si which can employed in the future for monolayer doping, highly selective biochemical sensors, and targeted biological interactions.

Increasing the Strain Resistance of Si/SiO2 Interfaces for Flexible Electronics

Understanding the changes that occur in the micro-mechanical properties of semiconductor materials is of utmost importance for the design of new flexible electronic devices, especially to control the properties of newly designed materials. In this work, we present the design, fabrication, and application of a novel tensile-testing device coupled to FTIR measurements that enables in situ atomic investigations of samples under uniaxial tensile load. The device allows for mechanical studies of rectangular samples with dimensions of 30 mm × 10 mm × 0.5 mm. By recording the alternation in dipole moments, the investigation of fracture mechanisms becomes feasible. Our results show that thermally treated SiO₂ on silicon wafers has a higher strain resistance and breaking force than the SiO₂ native oxide. The FTIR spectra of the samples during the unloading step indicate that for the native oxide sample, the fracture happened following the propagation of cracks from the surface into the silicon wafer. On the contrary, for the thermally treated samples, the crack growth starts from the deepest region of the oxide and propagates along the interface due to the change in the interface properties and redistribution of the applied stress. Finally, density functional theory calculations of model surfaces were conducted in order to unravel the differences in optic and electronic properties of the interfaces with and without applied stress.

Metal-Organic Framework-Derived N-Doped Porous Carbon for a Superprotonic Conductor at above 100 °C

The development of proton conductors capable of working at above 100 °C is of great significance for proton exchange membrane electrolysis cells (PEMECs) and proton exchange membrane fuel cells (PEMFCs) but remains to be an enormous challenge to date. In this work, we demonstrate for the first time that the N-doped porous carbon derived from metal-organic frameworks (MOFs) with great superiority can be exploited for high-performing proton conductors at above 100 °C. Through the pyrolysis of ZIF-8, the N-doped porous carbon (ZIF-8-C) featuring high chemical resistance to Fenton's reagent was readily prepared and then served as a robust host to accommodate H₃PO₄ molecules for proton transport. Upon impregnation with H₃PO₄, the resulting PA@ZIF-8-C exhibits low water swelling and high proton conduction of over 10^-2 S cm^-1 at a temperature above 100 °C, which is superior to many reported proton conductors. This work provides a new approach for the design of high-performing proton conductors at above 100 °C.

Antibacterial Inorganic Coating of Calcium Silicate Hydrate Substrates by Copper Incorporation

Under environmental conditions, biofilms can oftentimes be found on different surfaces, accompanied by the structural degradation of the substrate. Since high-copper-content paints were banned in the EU, a solution for the protection of these surfaces has to be found. In addition to hydrophobation, making the surfaces inherently biofilm-repellent is a valid strategy. We want to accomplish this via the metal exchange in calcium silicate hydrate (CSH) substrates with transition metals. As has been shown with Europium, even small amounts of metal can have a great influence on the material properties. To effectively model CSH surfaces, ultrathin CSH films were grown on silicon wafers using Ca(OH)2 solutions. Subsequently, copper was incorporated as an active component via ion exchange. Biofilm development is quantified using a multiple-resistant Pseudomonas aeruginosa strain described as a strong biofilm former cultivated in the culture medium for 24 h. Comprehensive structural and chemical analyses of the substrates are done by environmental scanning electron microscopy (ESEM), transmission Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), and time-of-flight secondary ion mass spectrometry (ToF-SIMS). Results do not show any structural deformation of the substrates by the incorporation of the Cu combined with three-dimensional (3D) homogeneous distribution. While the copper-free CSH phase shows a completely random distribution of the bacteria in biofilms, the samples with copper incorporation reveal lower bacterial colonization of the modified surfaces with an enhanced cluster formation.

Functionalization and Characterization of Silicon Nanowires for Sensing Applications: A Review

Silicon nanowires are attractive materials from the point of view of their electrical properties or high surface-to-volume ratio, which makes them interesting for sensing applications. However, they can achieve a better performance by adjusting their surface properties with organic/inorganic compounds. This review gives an overview of the main techniques used to modify silicon nanowire surfaces as well as characterization techniques. A comparison was performed with the functionalization method developed, and some applications of modified silicon nanowires and their advantages on those non-modified are subsequently presented. In the final words, the future opportunities of functionalized silicon nanowires for chipless tag radio frequency identification (RFID) have been depicted.

Exchange Reactions at Mineral Interfaces

Exchange reactions are a family of chemical reactions that appear when mineral surfaces come into contact with protic solvents. Exchange reactions can also be understood as a unique interaction at mineral interfaces. Particularly significant interactions occurring at mineral surfaces are those with water and CO₂. The rather complex process occurring when minerals such as calcium silicate hydrate (C-S-H) phases come into contact with aqueous environments is referred to as a metal-proton exchange reaction (MPER). This process leads to the leaching of calcium ions from the near-surface region, the first step in the corrosion of cement-bound materials. Among the various corrosion reactions of C-S-H phases, the MPER appears to be the most important one. A promising approach to bridging certain problems caused by MPER and carbonation is the passivation of C-S-H surfaces. Today, such passivation is reached, for instance, by the functionalization of C-S-H surfaces with water-repelling organic films. Unfortunately, these organic films are weak against temperature and especially weak against abrasion. Exchange reactions at mineral interfaces allow the preparation of intrinsic, hydrophobic surfaces of C-S-H phases just at room temperature via a metal-metal exchange reaction.

Super-Slippery Degraded Black Phosphorus/Silicon Dioxide Interface

The interfaces between two-dimensional (2D) materials and the silicon dioxide (SiO₂)/silicon (Si) substrate, generally considered as a solid-solid mechanical contact, have been especially emphasized for the structure design and the property optimization in microsystems and nanoengineering. The basic understanding of the interfacial structure and dynamics for 2D material-based systems still remains one of the inevitable challenges ahead. Here, an interfacial mobile water layer is indicated to insert into the interface of the degraded black phosphorus (BP) flake and the SiO₂/Si substrate owing to the induced hydroxyl groups during the ambient degradation. A super-slippery degraded BP/SiO₂ interface was observed with the interfacial shear stress (ISS) experimentally evaluated as low as 0.029 ± 0.004 MPa, being comparable to the ISS values of incommensurate rigid crystalline contacts. In-depth investigation of the interfacial structure through nuclear magnetic resonance spectroscopy and in situ X-ray photoelectron spectroscopy depth profiling revealed that the interfacial liquid water was responsible for the super-slippery BP/SiO₂ interface with extremely low shear stress. This finding clarifies the strong interactions between degraded BP and water molecules, which supports the potential wider applications of the few-layer BP nanomaterial in biological lubrication.

Disease antigens detection by silicon nanowires with the efficiency optimization of their antibodies on a chip

Enhancing the efficiency of antibody protein immobilized on a silicon nanowire-based chip for their antigens detection is reported. An external electric field (EEF) is applied to direct the orientation of antibodies during their immobilization on a chip. Atomic force microscopy (AFM) is used to measure the binding forces between immobilized antibody and targeting antigen under the influence of EEF at different angles. The maximum binding force under a specific angle (optimal angle; oa) of EEF (_maxEEF^oa) implies the optimal orientation of the antibodies on the chip. In this report, two different cancer carcinoembryonic antigen (CEA)-related cell adhesion molecules 5 (CEACAM5) & 1 (CEACAM1) were used for the examples of disease antigen detection. _maxEEF^oa of anti-CEACAM5 or anti-CEACAM1 immobilized on a general chip was firstly determined. Spectroscopy of AFM revealed that both binding forces were the largest ones with their antigens when _maxEEF^oa was applied as compared with no or other angles of EEF. These antibody proteins accompanied with the application of EEF were secondly immobilized on silicon-nanowires (n = 1000) and the field effects were measured (∆I) as their target antigens were approached. Results showed that ∆I was the largest ones when _maxEEF^oas (225°/270° and 135°/180° for anti-CEACAM5 and anti-CEACAM1, respectively) were applied as compared with other angles of EEF. These observations imply that the silicon nanowires together with the application of _maxEEF^oa as detection tools could be applied for the cancer diagnostics in the future.

Straightforward Immobilization of Phosphonic Acids and Phosphoric Acid Esters on Mesoporous Silica and Their Application in an Asymmetric Aldol Reaction

The combined benefits of moisture-stable phosphonic acids and mesoporous silica materials (SBA-15 and MCM-41) as large-surface-area solid supports offer new opportunities for several applications, such as catalysis or drug delivery. We present a comprehensive study of a straightforward synthesis method via direct immobilization of several phosphonic acids and phosphoric acid esters on various mesoporous silicas in a Dean–Stark apparatus with toluene as the solvent. Due to the utilization of azeotropic distillation, there was no need to dry phosphonic acids, phosphoric acid esters, solvents, or silicas prior to synthesis. In addition to modeling phosphonic acids, immobilization of the important biomolecule adenosine monophosphate (AMP) on the porous supports was also investigated. Due to the high surface area of the mesoporous silicas, a possible catalytic application based on immobilization of an organocatalyst for an asymmetric aldol reaction is discussed.

Natural Halloysites-Based Janus Platelet Surfactants for the Formation of Pickering Emulsion and Enhanced Oil Recovery

Janus colloidal surfactants with opposing wettabilities are receiving attention for their practical application in industry. Combining the advantages of molecular surfactants and particle-stabilized Pickering emulsions, Janus colloidal surfactants generate remarkably stable emulsions. Here we report a straightforward and cost-efficient strategy to develop Janus nanoplate surfactants (JNPS) from an aluminosilicate nanoclay, halloysite, by stepwise surface modification, including an innovative selective surface modification step. Such colloidal surfactants are found to be able to stabilize Pickering emulsions of different oil/water systems. The microstructural characterization of solidified polystyrene emulsions indicates that the emulsion interface is evenly covered by JNPS. The phase behaviors of water/oil emulsion generated by these novel platelet surfactants were also investigated. Furthermore, we demonstrate the application of JNPS for enhanced oil recovery with a microfluidic flooding test, showing a dramatic increase of oil recovery ratio. This research provides important insights for the design and synthesis of two-dimensional Janus colloidal surfactants, which could be utilized in biomedical, food and mining industries, especially for circumstances where high salinity and high temperature are involved.

Monolayer doping of germanium by phosphorus-containing molecules

The DPP (diethyl 1-propylphosphonate) and ODPA (octadecylphosphonic acid) molecules are studied as precursors for the monolayer doping (MLD) of germanium. Their adsorption behaviour is investigated, revealing different physicochemical interactions between the phosphorus-containing molecules and the Ge surfaces. It is discovered that DPP adsorption occurs after the oxidation of Ge surface, while the ODPA undergoes chemisorption on -H terminated surfaces. Quantitative phosphorus analysis demonstrates that in the first case more than one monolayer is formed (from 2 to 4), while in the second a single monolayer is formed. Moreover, the analysis of phosphorus diffusion from the surface layers into the Ge matrix reveals that conventional thermal annealing processes are not suitable for Ge injection due to a higher activation energy of the process in comparison with silicon. On the contrary, pulsed laser melting is effective in forming a doped layer, owing to the precursor's decomposition under UV light.

XPS Analysis of 2- and 3-Aminothiophenol Grafted on Silicon (111) Hydride Surfaces

Following on from our previous study on the resonance/inductive structures of ethynylaniline, this report examines similar effects arising from resonance structures with aromatic aminothiophenol with dual electron-donating substituents. In brief, 2- and 3-aminothiophenol were thermally grafted on silicon (111) hydride substrate at 130 °C under nonpolar aprotic mesitylene. From the examination of high resolution XPS Si2p, N1s, and S2p spectrum, it was noticed that there was a strong preference of NH₂ over SH to form Si⁻N linkage on the silicon hydride surface for 2-aminothiophenol. However, for 3-aminothiophenol, there was a switch in reactivity of the silicon hydride toward SH group. This was attributed to the antagonistic and cooperative resonance effects for 2- and 3-aminothiophenol, respectively. The data strongly suggested that the net resonance of the benzylic-based compound could have played an important role in the net distribution of negative charge along the benzylic framework and subsequently influenced the outcome of the surface reaction. To the best of the authors' knowledge, this correlation between dual electron-donating substituents and the outcome of the nucleophilic addition toward silicon hydride surfaces has not been described before in literature.

Smoothening of wrinkles in CVD-grown hexagonal boron nitride films

Hexagonal boron nitride (h-BN) is an ideal substrate for two-dimensional (2D) materials because of its unique electrically insulating nature, atomic smoothness and low density of dangling bonds. Although mechanical exfoliation from bulk crystals produces the most pristine flakes, scalable fabrication of devices is still dependent on other more direct synthetic routes. To date, the most utilized method to synthesize large-area h-BN films is by chemical vapor deposition (CVD) using catalytic metal substrates. However, a major drawback for such synthetic films is the manifestation of thermally-induced wrinkles, which severely disrupt the smoothness of the h-BN films. Here, we provide a detailed characterization study of the microstructure of h-BN wrinkles and demonstrate an effective post-synthesis smoothening route by thermal annealing in air. The smoothened h-BN film showed an improved surface smoothness by up to 66% and resulted in a much cleaner surface due to the elimination of polymer residues with no substantial oxidative damage to the film. The unwrinkling effect is attributed to the hydroxylation of the h-BN film as well as the substrate surface, resulting in a reduction in adhesion energy at the interface. Dehydroxylation occurs over time under ambient conditions at room temperature and the smoothened film can be restored back with the intrinsic properties of h-BN. This work provides an efficient route to achieve smoother h-BN films, which are beneficial for high-performance 2D heterostructure devices.

Functional Organophosphonate Interfaces for Nanotechnology: A Review

Optimization of interfaces in inorganic-organic device systems depends strongly on understanding both the molecular processes that are involved in surface modification and the effects that such modifications have on the electronic states of the material. In particular, the last several years have seen passivation and functionalization of semiconductor surfaces to be strategies by which to realize devices with superior function by controlling Fermi level energies, band-gap magnitudes, and work functions of semiconducting substrates. Among all of the synthetic routes and deposition methods available for the optimization of functional interfaces in hybrid systems, organophosphonate chemistry has been found to be a powerful tool to control at the molecular level the properties of materials in many different applications. In this Review, we focus on the relevance of organophosphonate chemistry in nanotechnology, giving an overview about some recent advances in surface modification, interface engineering, nanostructure optimization, and biointegration.

Nanopatterning of Group V Elements for Tailoring the Electronic Properties of Semiconductors by Monolayer Doping

Control of the electronic properties of semiconductors is primarily achieved through doping. While scaling down the device dimensions to the molecular regime presents an increasing number of difficulties, doping control at the nanoscale is still regarded as one of the major challenges of the electronic industry. Within this context, new techniques such as monolayer doping (MLD) represent a substantial improvement toward surface doping with atomic and specific doping dose control at the nanoscale. Our previous work has explained in detail the atomistic mechanism behind MLD by means of density-functional theory calculations (Chem. Mater. 2016, 28, 1975). Here, we address the key questions that will ultimately allow one to optimize the scalability of the MLD process. First, we show that dopant coverage control cannot be achieved by simultaneous reaction of several group V elements, but stepwise reactions make it possible. Second, using ab initio molecular dynamics, we investigate the thermal decomposition of the molecular precursors, together with the stability of the corresponding binary and ternary dopant oxides, prior to the dopant diffusion into the semiconductor surface. Finally, the effect of the coverage and type of dopant on the electronic properties of the semiconductor is also analyzed. Furthermore, the atomistic characterization of the MLD process raises unexpected questions regarding possible crystal damage effects by dopant exchange with the semiconductor ions or the final distribution of the doping impurities within the crystal structure. By combining all our results, optimization recipes to create ultrashallow doped junctions at the nanoscale are finally proposed.

Surface etching, chemical modification and characterization of silicon nitride and silicon oxide--selective functionalization of Si3N4 and SiO2

The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon dioxide surfaces have been shown to be terminated with surficial Si-OH sites, chemical composition of the HF-etched silicon nitride surfaces is more controversial. In this work, we removed the native oxide under various aqueous HF-etching conditions and studied the chemical nature of the resulting Si3N4 surfaces using infrared absorption spectroscopy (IRAS), x-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), and contact angle measurements. We find that HF-etched silicon nitride surfaces are terminated by surficial Si-F and Si-OH bonds, with slightly subsurface Si-OH, Si-O-Si, and Si-NH2 groups. The concentration of surficial Si-F sites is not dependent on HF concentration, but the distribution of oxygen and Si-NH2 displays a weak dependence. The Si-OH groups of the etched nitride surface are shown to react in a similar manner to the Si-OH sites on SiO2, and therefore no selectivity was found. Chemical selectivity was, however, demonstrated by first reacting the -NH2 groups on the etched nitride surface with aldehyde molecules, which do not react with the Si-OH sites on a SiO2 surface, and then using trichloro-organosilanes for selective reaction only on the SiO2 surface (no reactivity on the aldehyde-terminated Si3N4 surface).

Self-Correcting Process for High Quality Patterning by Atomic Layer Deposition

Nanoscale patterning of materials is widely used in a variety of device applications. Area selective atomic layer deposition (ALD) has shown promise for deposition of patterned structures with subnanometer thickness control. However, the current process is limited in its ability to achieve good selectivity for thicker films formed at higher number of ALD cycles. In this report, we demonstrate a strategy for achieving selective film deposition via a self-correcting process on patterned Cu/SiO2 substrates. We employ the intrinsically selective adsorption of octadecylphosphonic acid self-assembled monolayers on Cu over SiO2 surfaces to selectively create a resist layer only on Cu. ALD is then performed on the patterns to deposit a dielectric film. A mild etchant is subsequently used to selectively remove any residual dielectric film deposited on the Cu surface while leaving the dielectric film on SiO2 unaffected. The selectivity achieved after this treatment, measured by compositional analysis, is found to be 10 times greater than for conventional area selective ALD.

Application of Organophosphonic Acids by One-Step Supercritical CO2 on 1D and 2D Semiconductors: Toward Enhanced Electrical and Sensing Performances

Formation of dense monolayers with proven atmospheric stability using simple fabrication conditions remains a major challenge for potential applications such as (bio)sensors, solar cells, surfaces for growth of biological cells, and molecular, organic, and plastic electronics. Here, we demonstrate a single-step modification of organophosphonic acids (OPA) on 1D and 2D structures using supercritical carbon dioxide (SCCO2) as a processing medium, with high stability and significantly shorter processing times than those obtained by the conventional physisorption-chemisorption method (2.5 h vs 48-60 h).The advantages of this approach in terms of stability and atmospheric resistivity are demonstrated on various 2D materials, such as indium-tin-oxide (ITO) and 2D Si surfaces. The advantage of the reported approach on electronic and sensing devices is demonstrated by Si nanowire field effect transistors (SiNW FETs), which have shown a few orders of magnitude higher electrical and sensing performances, compared with devices obtained by conventional approaches. The compatibility of the reported approach with various materials and its simple implementation with a single reactor makes it easily scalable for various applications.

Germanium oxide removal by citric acid and thiol passivation from citric acid-terminated Ge(100)

Many applications of germanium (Ge) are underpinned by effective oxide removal and surface passivation. This important surface treatment step often requires H-X (X = Cl, Br, I) or HF etchants. Here, we show that aqueous citric acid solutions are effective in the removal of GeOx. The stability of citric acid-treated Ge(100) is compared to HF and HCl treated surfaces and analyzed by X-ray photoelectron spectroscopy. Further Ge surface passivation was investigated by thiolation using alkane monothiols and dithiols. The organic passivation layers show good stability with no oxide regrowth observed after 3 days of ambient exposure.

Improving area-selective molecular layer deposition by selective SAM removal

Area selective molecular layer deposition (MLD) is a promising technique for achieving micro- or nanoscale patterned organic structures. However, this technique still faces challenges in attaining high selectivity, especially at large MLD cycle numbers. Here, we illustrate a new strategy for achieving high quality patterns in selective film deposition on patterned Cu/Si substrates. We employed the intrinsically selective adsorption of an octadecylphosphonic acid self-assembled monolayer (SAM) on Cu over Si surfaces to selectively create a resist layer only on Cu. MLD was then performed on the patterns to deposit organic films predominantly on the Si surface, with only small amounts growing on the Cu regions. A negative potential bias was subsequently applied to the pattern to selectively desorb the layer of SAMs electrochemically from the Cu surface while preserving the MLD films on Si. Selectivity could be enhanced up to 30-fold after this treatment.

Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method

The fabrication of future nanoscale semiconductor devices calls for precise placement of dopant atoms into their crystal lattice. Monolayer doping combined with a conventional spike annealing method provides a bottom-up approach potentially viable for large scale production. While the diffusion of the dopant was demonstrated at the start of the method, more sophisticated techniques are required in order to understand the diffusion, at the near surface, of P and contaminants such as C and O carried by the precursor, not readily accessible to direct time-of-flight secondary ion mass spectrometry measurements. By employing atom probe tomography, we report on the behavior of dopant and contaminants introduced by the molecular monolayer doping method into the first nanometers. The unwanted diffusion of C and O-related molecules is revealed and it is shown that for C and O it is limited to the first monolayers, where Si-C bonding formation is also observed, irrespective of the spike annealing temperature. From the perspective of large scale employment, our results suggest the benefits of adding a further process to the monolayer doping combined with spike annealing method, which consists of removing a sacrificial Si layer to eliminate contaminants.

Controlled, low-coverage metal oxide activation of silicon for organic functionalization: unraveling the phosphonate bond

Deposition of thin films and grafting of organic molecules on semiconductor surfaces, particularly oxide surfaces, are widely studied as means of passivation and functionalization for a variety of applications. However, organic functionalization of silicon oxide is challenging, as the currently used molecules (silanes and phosphonates) do not form layers that are stable in aqueous environments and present challenges during the grafting process. For instance, the chemical grafting of phosphonates requires high temperature (140 °C) to perform. Modification of SiO(2) surfaces with metal oxides is an attractive alternative since strong bonds can be established between metal oxides and relevant molecules (silanes, phosphonates). While such modification is possible using vapor-phase methods, such as atomic layer deposition and physical vapor-phase deposition, wet chemical processing is inexpensive and technologically very attractive. We describe here a simple wet chemical method to deposit an ultrathin layer of metal oxide/hydroxide groups. Further, using a model surface with exactly one-third monolayer OH groups on oxide-free Si surfaces, the precise adsorption geometry on single Al(OH)(3) groups is shown to be bidentate, and the distance between the Al and P atoms is determined to be the main influencing parameter for a thermodynamically stable formation of the Al-O-P bond.