Controlled Synthesis of Highly Crystalline MoS2 Flakes by Chemical Vapor Deposition

Sub-Nanosecond Single Mode-Locking Pulse Generation in an Idler-Resonant Intracavity KTA Optical Parametric Oscillator Driven by a Dual-Loss-Modulated Q-Switched and Mode-Locked Laser with an Acousto-Optic Modulator and MoWS2

The synthesis of 2D MoWS2 nanosheets involved the liquid-phase exfoliation technique was explored in this paper. The nonlinear optical response of MoWS2 was characterized in the 1 µm wavelength range, and its suitability as a saturable absorber (SA) was confirmed. Experimental demonstrations were conducted by using MoWS2 as an SA in an idler-resonant intracavity KTA optical parametric oscillator (OPO) driven by a dual-loss-modulated Q-switched and mode-locked (QML) YVO4/Nd:YVO4 laser with an acousto-optic modulator (AOM). By appropriately tuning the pump power and the AOM repetition rate, the Q-switched envelope pulse widths for the signal and idler waves could be significantly reduced to be shorter than the cavity round-trip transit time, i.e., the interval between two neighboring mode-locking pulses. Consequently, this enabled the generation of sub-nanosecond single mode-locking pulses with a low repetition rate, high pulse energy, and remarkable stability. With a repetition rate of 1 kHz and maximal pulse energies of 318 µJ and 169 µJ, respectively, sub-nanosecond single mode-locking pulses of the signal and idler waves were generated. The theoretical model was established using coupled rate equations with a Gaussian spatial distribution approximation. The numerical simulation results for generating sub-nanosecond single mode-locking pulses for the signal and idler waves within their respective Q-switched envelopes aligned fundamentally with the experimental results, proving that MoWS2 can be a potential nanomaterial for further optoelectronic applications.

Large-Area Epitaxial Growth of Transition Metal Dichalcogenides

Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.

Optimization and scalability assessment of supercapacitor electrodes based on hydrothermally grown MoS2 on carbon cloth

MoS2 is a well-known 2D transition metal dichalcogenide (TMD) with feasibility for energy storage applications due to its eco-friendliness and high electroactive surface area. Electrodes based on MoS2 are typically made by either immobilizing its multiphase nanocomposites, having binders and conductive fillers, or by directly growing the materials on current collectors. In this work, we follow and optimize this latter approach by applying a hydrothermal route to directly synthesize MoS2 nanostructures on carbon cloth (MoS2@CC) hence enabling binder-free current collector electrodes. Raman spectroscopy and electron microscopy analyses confirmed the formation of 2H MoS2 nanosheets with hexagonal structure. The as-prepared electrodes were used to assemble symmetric supercapacitor cells, whose performance were tested in various types of electrolytes. Electrochemical measurements indicate that both precursor concentration and growth time significantly affect the device performance. Under optimized conditions, specific capacitance up to 226 F g-1 (at 1 A g-1 in 6 M KOH) was achieved, with corresponding energy and power densities of 5.1 W h kg-1 and 2.1 W kg-1. The device showed good stability, retaining 85% capacitance after 1000 cycles. Furthermore, the electrodes assessed in PYR14-TFSI showed energy and power densities of up to 26.3 W h kg-1 and 2.0 kW kg-1, respectively, indicating their feasibility not only in aqueous but also in ionic liquid electrolytes. In addition, galvanostatic charge/discharge measurements conducted on devices having footprint sizes from 1 cm2 to 25 cm2 show very similar specific capacitances, which proves scalability and thus the practical relevance of the binder-free electrodes demonstrated in this study.

Exfoliated 2D Nanosheet-Based Conjugated Polymer Composites with P-N Heterojunction Interfaces for Highly Efficient Electrocatalytic Hydrogen Evolution

We have achieved a significant breakthrough in the preparation and development of two-dimensional nanocomposites with P-N heterojunction interfaces as efficient cathode catalysts for electrochemical hydrogen evolution reaction (HER) and iodide oxidation reaction (IOR). P-type acid-doped polyaniline (PANI) and N-type exfoliated molybdenum disulfide (MoS2) nanosheets can form structurally stable composites due to formation of P-N heterojunction structures at their interfaces. These P-N heterojunctions facilitate charge transfer from PANI to MoS2 structures and thus significantly enhance the catalytic efficiency of MoS2 in the HER and IOR. Herein, by combining efficient sodium-functionalized chitosan-assisted MoS2 exfoliation, electropolymerization of PANI on nickel foam (NF) substrate, and electrochemical activation, controllable and scalable Na-Chitosan/MoS2/PANI/NF electrodes are successfully constructed as non-noble metal-based electrochemical catalysts. Compared to a commercial platinum/carbon (Pt/C) catalyst, the Na-Chitosan/MoS2/PANI/NF electrode exhibits significantly lower resistance and overpotential, a similar Tafel slope, and excellent catalytic stability at high current densities, demonstrating excellent catalytic performance in the HER under acidic conditions. More importantly, results obtained from proton exchange membrane fuel cell devices confirm the Na-Chitosan/MoS2/PANI/NF electrode exhibits a low turn-on voltage, high current density, and stable operation at 2 V. Thus, this system holds potential as a replacement for Pt/C with feasibility for applications in energy-related fields.

Wafer-Scale Atomic Assembly for 2D Multinary Transition Metal Dichalcogenides for Visible and NIR Photodetection

The tunable properties of 2D transition-metal dichalcogenide (TMDs) materials are extensively investigated for high-performance and wavelength-tunable optoelectronic applications. However, the precise modification of large-scale systems for practical optoelectronic applications remains a challenge. In this study, a wafer-scale atomic assembly process to produce 2D multinary (binary, ternary, and quaternary) TMDs for broadband photodetection is demonstrated. The large-area growth of homogeneous MoS2, Ni0.06Mo0.26S0.68, and Ni0.1Mo0.9S1.79Se0.21 is carried out using a succinct coating of the single-source precursor and subsequent thermal decomposition combined with thermal evaporation of the chalcogen powder. The optoelectrical properties of the multinary TMDs are dependent on the combination of heteroatoms. The maximum photoresponsivity of the MoS2-, Ni0.06Mo0.26S0.68-, and Ni0.1Mo0.9S1.79Se0.21-based photodetectors is 3.51 × 10-4, 1.48, and 0.9 A W-1 for 532 nm and 0.063, 0.42, and 1.4 A W-1 for 1064 nm, respectively. The devices exhibited excellent photoelectrical properties, which is highly beneficial for visible and near-infrared (NIR) photodetection.

Understanding epitaxial growth of two-dimensional materials and their homostructures

The exceptional physical properties of two-dimensional (2D) van der Waals (vdW) materials have been extensively researched, driving advances in material synthesis. Epitaxial growth, a prominent synthesis strategy, enables the production of large-area, high-quality 2D films compatible with advanced integrated circuits. Typical 2D single crystals, such as graphene, transition metal dichalcogenides and hexagonal boron nitride, have been epitaxially grown at a wafer scale. A systematic summary is required to offer strategic guidance for the epitaxy of emerging 2D materials. Here we focus on the epitaxy methodologies for 2D vdW materials in two directions: the growth of in-plane single-crystal monolayers and the fabrication of out-of-plane homostructures. We first discuss nucleation control of a single domain and orientation control over multiple domains to achieve large-scale single-crystal monolayers. We analyse the defect levels and measures of crystalline quality of typical 2D vdW materials with various epitaxial growth techniques. We then outline technical routes for the growth of homogeneous multilayers and twisted homostructures. We further summarize the current strategies to guide future efforts in optimizing on-demand fabrication of 2D vdW materials, as well as subsequent device manufacturing for their industrial applications.

From Bulk Molybdenum Disulfide (MoS2) to Suspensions of Exfoliated MoS2 in an Aqueous Medium and Their Applications

Two-dimensional (2D) layered materials like graphene, transition-metal dichalcogenides (TMDs), boron nitrides, etc., exhibit unique and fascinating properties, such as high surface-to-volume ratio, inherent mechanical flexibility and robustness, tunable bandgap, and high carrier mobility, which makes them an apt candidate for flexible electronics with low consumption of power. Because of these properties, they are in tremendous demand for advancement in energy, environmental, and biomedical sectors developed through various technologies. The production and scalability of these materials must be sustainable and ecofriendly to utilize these unique properties in the real world. Here, in this current review, we review molybdenum disulfide (MoS2 nanosheets) in detail, focusing on exfoliated MoS2 in water and the applicability of aqueous MoS2 suspensions in various fields. The exfoliation of MoS2 results in the formation of single or few-layered MoS2. Therefore, this Review focuses on the few layers of exfoliated MoS2 that have the additional properties of 2D layered materials and higher excellent compatibility for integration than existing conventional Si tools. Hence, a few layers of exfoliated MoS2 are widely explored in biosensing, gas sensing, catalysis, photodetectors, energy storage devices, a light-emitting diode (LED), adsorption, etc. This review covers the numerous methodologies to exfoliate MoS2, focusing on the various published methodologies to obtain nanosheets of MoS2 from water solutions and their use.

Low-Temperature Vapor-Phase Growth of 2D Metal Chalcogenides

2D metal chalcogenides (MCs) have garnered significant attention from both scientific and industrial communities due to their potential in developing next-generation functional devices. Vapor-phase deposition methods have proven highly effective in fabricating high-quality 2D MCs. Nevertheless, the conventionally high thermal budgets required for synthesizing 2D MCs pose limitations, particularly in the integration of multiple components and in specialized applications (such as flexible electronics). To overcome these challenges, it is desirable to reduce the thermal energy requirements, thus facilitating the growth of various 2D MCs at lower temperatures. Numerous endeavors have been undertaken to develop low-temperature vapor-phase growth techniques for 2D MCs, and this review aims to provide an overview of the latest advances in low-temperature vapor-phase growth of 2D MCs. Initially, the review highlights the latest progress in achieving high-quality 2D MCs through various low-temperature vapor-phase techniques, including chemical vapor deposition (CVD), metal-organic CVD, plasma-enhanced CVD, atomic layer deposition (ALD), etc. The strengths and current limitations of these methods are also evaluated. Subsequently, the review consolidates the diverse applications of 2D MCs grown at low temperatures, covering fields such as electronics, optoelectronics, flexible devices, and catalysis. Finally, current challenges and future research directions are briefly discussed, considering the most recent progress in the field.

Experimental and Theoretical Insights into Interfacial Properties of 2D Materials for Selective Water Transport Membranes: A Critical Review

Interfacial properties, such as wettability and friction, play critical roles in nanofluidics and desalination. Understanding the interfacial properties of two-dimensional (2D) materials is crucial in these applications due to the close interaction between liquids and the solid surface. The most important interfacial properties of a solid surface include the water contact angle, which quantifies the extent of interactions between the surface and water, and the water slip length, which determines how much faster water can flow on the surface beyond the predictions of continuum fluid mechanics. This Review seeks to elucidate the mechanism that governs the interfacial properties of diverse 2D materials, including transition metal dichalcogenides (e.g., MoS2), graphene, and hexagonal boron nitride (hBN). Our work consolidates existing experimental and computational insights into 2D material synthesis and modeling and explores their interfacial properties for desalination. We investigated the capabilities of density functional theory and molecular dynamics simulations in analyzing the interfacial properties of 2D materials. Specifically, we highlight how MD simulations have revolutionized our understanding of these properties, paving the way for their effective application in desalination. This Review of the synthesis and interfacial properties of 2D materials unlocks opportunities for further advancement and optimization in desalination.

Growth of Wafer-Scale Single-Crystal 2D Semiconducting Transition Metal Dichalcogenide Monolayers

Due to extraordinary electronic and optoelectronic properties, large-scale single-crystal two-dimensional (2D) semiconducting transition metal dichalcogenide (TMD) monolayers have gained significant interest in the development of profit-making cutting-edge nano and atomic-scale devices. To explore the remarkable properties of single-crystal 2D monolayers, many strategies are proposed to achieve ultra-thin functional devices. Despite substantial attempts, the controllable growth of high-quality single-crystal 2D monolayer still needs to be improved. The quality of the 2D monolayer strongly depends on the underlying substrates primarily responsible for the formation of grain boundaries during the growth process. To restrain the grain boundaries, the epitaxial growth process plays a crucial role and becomes ideal if an appropriate single crystal substrate is selected. Therefore, this perspective focuses on the latest advances in the growth of large-scale single-crystal 2D TMD monolayers in the light of enhancing their industrial applicability. In the end, recent progress and challenges of 2D TMD materials for various potential applications are highlighted.

Unveiling the antibacterial strategies and mechanisms of MoS2: a comprehensive analysis and future directions

Antibiotic resistance is a growing problem that requires alternative antibacterial agents. MoS2, a two-dimensional transition metal sulfide, has gained significant attention in recent years due to its exceptional photocatalytic performance, excellent infrared photothermal effect, and impressive antibacterial properties. This review presents a detailed analysis of the antibacterial strategies and mechanism of MoS2, starting with its morphology and synthesis methods and focusing on the different interaction stages between MoS2 and bacteria. The paper summarizes the main antibacterial mechanisms of MoS2, such as photocatalytic antibacterial, enzyme-like catalytic antibacterial, physical antibacterial, and photothermal-assisted antibacterial. It offers a comprehensive discussion focus on recent research studies of photocatalytic antibacterial mechanisms and categorizes them, guiding the application of MoS2 in the antibacterial field. Overall, the review provides an in-depth understanding of the antibacterial mechanisms of MoS2 and presents the challenges and future directions for the improvement of MoS2 in the field of high-efficiency antibacterial materials.

Interfacial engineering of transition metal dichalcogenide/carbon heterostructures for electrochemical energy applications

To support the global goal of carbon neutrality, numerous efforts have been devoted to the advancement of electrochemical energy conversion (EEC) and electrochemical energy storage (EES) technologies. For these technologies, transition metal dichalcogenide/carbon (TMDC/C) heterostructures have emerged as promising candidates for both electrode materials and electrocatalysts over the past decade, due to their complementary advantages. It is worth noting that interfacial properties play a crucial role in establishing the overall electrochemical characteristics of TMDC/C heterostructures. However, despite the significant scientific contribution in this area, a systematic understanding of TMDC/C heterostructures' interfacial engineering is currently lacking. This literature review aims to focus on three types of interfacial engineering, namely interfacial orientation engineering, interfacial stacking engineering, and interfacial doping engineering, of TMDC/C heterostructures for their potential applications in EES and EEC devices. To accomplish this goal, a combination of experimental and theoretical approaches was used to allow the analysis and summary of the fundamental electrochemical properties and preparation strategies of TMDC/C heterostructures. Moreover, this review highlights the design and utilization of the interfacial engineering of TMDC/C heterostructures for specific EES and EEC devices. Finally, the challenges and opportunities of using interfacial engineering of TMDC/C heterostructures in practical EES and EEC devices are outlined. We expect that this review will effectively guide readers in their understanding, design, and application of interfacial engineering of TMDC/C heterostructures.

Automated mechanical exfoliation technique: a spin pumping study in YIG/TMD heterostructures

Spintronics devices rely on the generation and manipulation of spin currents. Two-dimensional transition-metal dichalcogenides (TMDs) are among the most promising materials for a spin current generation due to a lack of inversion symmetry at the interface with the magnetic material. Here, we report on the fabrication of Yttrium Iron Garnet(YIG)/TMD heterostructures by means of a crude and fast method. While the magnetic insulator single-crystalline YIG thin films were grown by magnetron sputtering, the TMDs, namely MoS2 and MoSe2, were directly deposited onto YIG films using an automated mechanical abrasion method. Despite the brute force aspect of the method, it produces high-quality interfaces, which are suitable for spintronic device applications. The spin current density and the effective spin mixing conductance were measured by ferromagnetic resonance, whose values found are among the highest reported in the literature. Our method can be scaled to produce ferromagnetic materials/TMD heterostructures on a large scale, further advancing their potential for practical applications.

Polymer-Embedding Germanium Nanostrip Waveguide of High Polarization Extinction

Germanium (Ge) nanostrip was embedded in a polymer and studied as a waveguide. The measurements reveal that this new type of semiconductor/polymer heterogeneous waveguide exhibits strong absorption for the TE mode from 1500 nm to 2004 nm, while the propagation loss for the TM mode declines from 20.56 dB/cm at 1500 nm to 4.89 dB/cm at 2004 nm. The transmission characteristics serve as an essential tool for verifying the optical parameters (n-κ, refractive index, and extinction coefficient) of the strip, addressing the ambiguity raised by spectroscopic ellipsometry regarding highly absorbing materials. Furthermore, the observed strong absorption for the TE mode at 2004 nm is well beyond the cut-off wavelength of the crystalline bulk Ge (~1850 nm at room temperature). This redshift is modeled to manifest the narrowing of the Tauc-fitted bandgap due to the grain order effect in the amorphous Ge layer. The accurate measurement of the nanometer-scale light-absorbing strips in a waveguide form is a crucial step toward the accurate design of integrated photonic devices that utilize such components.

Anisotropic charge transfer and gate tuning for p-SnS/n-MoS2 vertical van der Waals diodes

2D-material-based van der Waals heterostructures (vdWhs) have shown great potential in next-generation multi-functional microelectronic devices. Thanks to their sharp interface and ultrathin thickness, 2D p-n junctions with high rectification properties have been established by combining p-type monochalcogenides with n-type transition metal dichalcogenides. However, the anisotropic rectification together with the charge transfer and gate effect has not been clarified. Herein, the electrical anisotropy of p-SnS/n-MoS2 diodes was studied. Optimum ideality factors within 1.08-1.18 have been achieved for the diode with 6.6 nm thick SnS on monolayer MoS2, and a high rectification ratio of 3.1 × 104 with strong in-plane anisotropy is observed along the zigzag direction of SnS. A strong gate effect on the anisotropic series resistance has been verified and an effective tuning over the transport length of the SnS channel can be established through adjustment of the current orientation and gate voltage. A thickness-dependent minority carrier transport mechanism has also been demonstrated for the reverse drain current, and Fowler-Nordheim tunneling and direct tunneling are proposed for the increase of the reverse current of the thicker and thinner diodes, respectively. This work will provide another strategy for high-performance diodes based on vdWhs via the control of the current orientation and the gate effect.

Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide

Molybdenum disulfide (MoS2) transistors are a promising alternative for the semiconductor industry due to their large on/off current ratio (>1010), immunity to short-channel effects, and unique switching characteristics. MoS2 has drawn considerable interest due to its intriguing electrical, optical, sensing, and catalytic properties. Monolayer MoS2 is a semiconducting material with a direct band gap of ~1.9 eV, which can be tuned. Commercially, the aim of synthesizing a novel material is to grow high-quality samples over a large area and at a low cost. Although chemical vapor deposition (CVD) growth techniques are associated with a low-cost pathway and large-area material growth, a drawback concerns meeting the high crystalline quality required for nanoelectronic and optoelectronic applications. This research presents a lower-temperature CVD for the repeatable synthesis of large-size mono- or few-layer MoS2 using the direct vapor phase sulfurization of MoO3. The samples grown on Si/SiO2 substrates demonstrate a uniform single-crystalline quality in Raman spectroscopy, photoluminescence (PL), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and scanning transmission electron microscopy. These characterization techniques were targeted to confirm the uniform thickness, stoichiometry, and lattice spacing of the MoS2 layers. The MoS2 crystals were deposited over the entire surface of the sample substrate. With a detailed discussion of the CVD setup and an explanation of the process parameters that influence nucleation and growth, this work opens a new platform for the repeatable synthesis of highly crystalline mono- or few-layer MoS2 suitable for optoelectronic application.

Electronic Structure of Colloidal 2H-MoS2 Mono and Bilayers Determined by Spectroelectrochemistry

The electronic structure of mono and bilayers of colloidal 2H-MoS₂ nanosheets synthesized by wet-chemistry using potential-modulated absorption spectroscopy (EMAS), differential pulse voltammetry, and electrochemical gating measurements is investigated. The energetic positions of the conduction and valence band edges of the direct and indirect bandgap are reported and observe strong bandgap renormalization effects, charge screening of the exciton, as well as intrinsic n-doping of the as-synthesized material. Two distinct transitions in the spectral regime associated with the C exciton are found, which overlap into a broad signal upon filling the conduction band. In contrast to oxidation, the reduction of the nanosheets is largely reversible, enabling potential applications for reductive electrocatalysis. This work demonstrates that EMAS is a highly sensitive tool for determining the electronic structure of thin films with a few nanometer thicknesses and that colloidal chemistry affords high-quality transition metal dichalcogenide nanosheets with an electronic structure comparable to that of exfoliated samples.

Polychromatic fluorescent MoS2 quantum dots: fabrication and off-on sensing for fluorine ions in water

Recently, MoS₂ quantum dots (QDs) have receive widespread attention as a promising luminescent material. However, so far, little effort has been made on the multicolor emission of MoS₂ QDs. Herein, an in situ iodine doping strategy is presented and used to synthesize tunable-photoluminescent (PL) MoS₂ QDs. By fine iodine doping, the PL of the MoS₂ QDs (I-MoS₂ QDs) can be tuned in the range from 423 nm to 529 nm, which exceeds the as-reported emission wavelength range. Studies using controlled experiments and density functional theory (DFT) reveal that the change in electronic state of MoS₂ QDs is responsible for the changing PL due to iodine doping. As-synthesized I-MoS₂ QDs combined with Fe³⁺ is developed as a "turn-off-on" fluorescence sensor for F^- ions in water. The fluorescence probe has a fine linear response to F^- ions in the concentration range of 2.5-80 μM, and the limit of detection is 1.4 μM (S/N = 3).

Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review

Remote epitaxy, which was discovered and reported in 2017, has seen a surge of interest in recent years. Although the technology seemed to be difficult to reproduce by other labs at first, remote epitaxy has come a long way and many groups are able to consistently reproduce the results with a wide range of material systems including III-V, III-N, wide band-gap semiconductors, complex-oxides, and even elementary semiconductors such as Ge. As with any nascent technology, there are critical parameters which must be carefully studied and understood to allow wide-spread adoption of the new technology. For remote epitaxy, the critical parameters are the (1) quality of two-dimensional (2D) materials, (2) transfer or growth of 2D materials on the substrate, (3) epitaxial growth method and condition. In this review, we will give an in-depth overview of the different types of 2D materials used for remote epitaxy reported thus far, and the importance of the growth and transfer method used for the 2D materials. Then, we will introduce the various growth methods for remote epitaxy and highlight the important points in growth condition for each growth method that enables successful epitaxial growth on 2D-coated single-crystalline substrates. We hope this review will give a focused overview of the 2D-material and substrate interaction at the sample preparation stage for remote epitaxy and during growth, which have not been covered in any other review to date.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

Centimeter-Scale PdS2 Ultrathin Films with High Mobility and Broadband Photoresponse

2D materials with mixed crystal phase will lead to the nonuniformity of performance and go against the practical application. Therefore, it is of great significance to develop a valid method to synthesize 2D materials with typical stoichiometry. Here, 2D palladium sulfides with centimeter scale and uniform stoichiometric ratio are synthesized via controlling the sulfurization temperature of palladium thin films. The relationship between sulfurization temperature and products is investigated in depth. Besides, the high-quality 2D PdS₂ films are synthesized via sulfurization at the temperature of 450-550 °C, which would be compatible with back-end-of-line processes in semiconductor industry with considering of process temperature. The PdS₂ films show an n-type semiconducting behavior with high mobility of 10.4 cm² V^-1 s^-1 . The PdS₂ photodetector presents a broadband photoresponse from 450 to 1550 nm. These findings provide a reliable way to synthesizing high-quality and large-area 2D materials with uniform crystal phase. The result suggests that 2D PdS₂ has significant potential in future nanoelectronics and optoelectronic applications.

An interlayer spacing design approach for efficient sodium ion storage in N-doped MoS2

MoS₂ in a graphene-like structure that possesses a large interlayer spacing is a promising anode material for sodium ion batteries (SIBs). However, its poor cycling stability and bad rate performance limit its wide application. In this work, we synthesized an N-doped rGO/MoS₂ (ISE, interlayer spacing enlarged) composite based on an innovative strategy to serve as an anode material for SIBs. By inserting NH₄⁺ into the interlayer of MoS₂, the interlayer spacing of MoS₂ was successfully expanded to 0.98 nm. Further use of N plasma treatment achieved the doping of N element. The results show that N-rGO/MoS₂(ISE) exhibits a high specific capacity of 542 mA h g^-1 after 300 cycles at 200 mA g^-1. It is worth mentioning that the capacity retention rate reaches an ultra-large percentage of 97.13%, and the average decline percentage per cycle is close to 0.01%. Moreover, it also presents an excellent rate performance (477, 432, 377, 334 mA h g^-1 at 200, 500, 1000, 2000 m A g^-1 respectively). This work reveals a unique approach to fabricating promising anode materials and the electrochemical reaction mechanism for SIBs.

Emerging MoS2 Wafer-Scale Technique for Integrated Circuits

As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has excellent physical properties, such as high carrier mobility, stability, and abundance on earth. Moreover, its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics, flexible electronics, and focal-plane photodetector. However, to realize the all-aspects application of MoS2, the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization. Although the MoS2 grain size has already improved from several micrometers to sub-millimeters, the high-quality growth of wafer-scale MoS2 is still of great challenge. Herein, this review mainly focuses on the evolution of MoS2 by including chemical vapor deposition, metal-organic chemical vapor deposition, physical vapor deposition, and thermal conversion technology methods. The state-of-the-art research on the growth and optimization mechanism, including nucleation, orientation, grain, and defect engineering, is systematically summarized. Then, this review summarizes the wafer-scale application of MoS2 in a transistor, inverter, electronics, and photodetectors. Finally, the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS2.

Wafer-Scale Production of Two-Dimensional Tin Monoselenide: Expandable Synthetic Platform for van der Waals Semiconductor-Based Broadband Photodetectors

A synthetic platform for industrially applicable two-dimensional (2D) semiconductors that addresses the paramount issues associated with large-scale production, wide-range photosensitive materials, and oxidative stability has not yet been developed. In this study, we attained the 6 in. scale production of 2D SnSe semiconductors with spatial homogeneity using a rational synthetic platform based on the thermal decomposition of solution-processed single-source precursors. The long-range structural and chemical homogeneities of the 2D SnSe layers are manifested using comprehensive spectroscopic analyses. Furthermore, the capability of the SnSe-based photodetectors for broadband photodetection is distinctly verified. The photoresponsivity and detectivity of the SnSe-based photodetectors are 5.89 A W-1 and 1.8 × 1011 Jones at 532 nm, 1.2 A W-1 and 3.7 × 1010 Jones at 1064 nm, and 0.14 A W-1 and 4.3 × 109 Jones at 1550 nm, respectively. The minimum rise times for the 532 and 1064 nm lasers are 62 and 374 μs, respectively. The photoelectrical analysis of the 5 × 5 SnSe-based photodetector array reveals 100% active devices with 95.06% photocurrent uniformity. We unequivocally validated that the air and thermal stabilities of the photocurrent yielded from the SnSe-based photodetector are determined to be >30 d in air and 160 °C, respectively, which are suitable for optoelectronic applications.

New Approaches to Produce Large-Area Single Crystal Thin Films

Wafer-scale growth of single crystal thin films of metals, semiconductors, and insulators is crucial for manufacturing high-performance electronic and optical devices, but still challenging from both scientific and industrial perspectives. Recently, unconventional advanced synthetic approaches have been attempted and have made remarkable progress in diversifying the species of producible single crystal thin films. This review introduces several new synthetic approaches to produce large-area single crystal thin films of various materials according to the concepts and principles.

Architecture of visible-light induced Z-scheme MoS2/g-C3N4/ZnO ternary photocatalysts for malachite green dye degradation

The synthesis of bilayer heterojunctions has received considerable attention recently. Fabrication of novel bilayer composites is of significant interest to improve their photocatalytic efficiency. In this study, molybdenum disulfide (MoS₂), a layered dichalcogenide material exhibiting unique properties, in combination with graphitic carbon nitride (g-C₃N₄), a carbon-based layered material, was fabricated with small amounts of zinc oxide (ZnO). Three composites, MoS₂/g-C₃N₄, MoS₂/ZnO, and MoS₂/g-C₃N₄/ZnO were prepared via a simple exfoliation method and characterized by various physicochemical methods. The Z-scheme charge transfer mechanism in the prepared ternary composite improves efficiency by inhibiting the recombination rate of electron-hole pairs. It has shown excellent performance in degrading a major water contaminant, malachite green (MG) dye, under visible light irradiation.

Homogeneously niobium-doped MoS2 for rapid and high-sensitive detection of typical chemical warfare agents

Rapid detection of Chemical Warfare Agents (CWAs) is of great significance in protecting civilians in public places and military personnel on the battlefield. Two-dimensional (2D) molybdenum disulfide (MoS2) nanosheets (NSs) can be integrated as a gas sensor at room temperature (25°C) due to their large specific surface area and excellent semiconductor properties. However, low sensitivity and long response-recovery time hinder the pure MoS2 application in CWAs gas sensors. In this work, we developed a CWAs sensor based on in-situ niobium-doped MoS2 NSs (Nb-MoS2 NSs) via direct chemical-vapor-deposition (CVD) growth. Characterization results show that the high content of Nb elements (7.8 at%) are homogeneously dispersed on the large-area 2D structure of MoS2. The Nb-MoS2 NSs-based CWAs sensor exhibits higher sensitivity (−2.09% and −3.95% to 0.05 mg/m3 sarin and sulfur mustard, respectively) and faster response speed (78 s and 30 s to 0.05 mg/m3 sarin and sulfur mustard, respectively) than MoS2 and other 2D materials at room temperature. And the sensor has certain specificity for sarin and sulfur mustard and is especially sensitive to sulfur mustard. This can be attributed to the improvement of adsorption properties via electronic regulation of Nb doping. This is the first report about CWAs detection based on two-dimensional (2D) transition metal dichalcogenides (TMDs) sensing materials, which demonstrates that the high sensitivity, rapid response, and low limit of detection of 2D TMDs-based CWAs sensor can meet the monitoring needs of many scenarios, thus showing a strong application potential.

NaCl-Assisted Temperature-Dependent Controllable Growth of Large-Area MoS2 Crystals Using Confined-Space CVD

Due to its semiconducting nature, controlled growth of large-area chemical vapor deposition (CVD)-grown two-dimensional (2D) molybdenum disulfide (MoS2) has a lot of potential applications in photodetectors, sensors, and optoelectronics. Yet the controllable, large-area, and cost-effective growth of highly crystalline MoS2 remains a challenge. Confined-space CVD is a very promising method for the growth of highly crystalline MoS2 in a controlled manner. Herein, we report the large-scale growth of MoS2 with different morphologies using NaCl as a seeding promoter for confined-space CVD. Changes in the morphologies of MoS2 are reported by variation in the amount of seeding promoter, precursor ratio, and the growth temperature. Furthermore, the properties of the grown MoS2 are analyzed using optical microscopy, scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDX), and atomic force microscopy (AFM). The electrical properties of the CVD-grown MoS2 show promising performance from fabricated field-effect transistors. This work provides new insight into the growth of large-area MoS2 and opens the way for its various optoelectronic and electronic applications.

NaCl-Assisted Chemical Vapor Deposition of Large-Domain Bilayer MoS2 on Soda-Lime Glass

In recent years, two-dimensional molybdenum disulfide (MoS₂) has attracted extensive attention in the application field of next-generation electronics. Compared with single-layer MoS₂, bilayer MoS₂ has higher carrier mobility and has more promising applications for future novel electronic devices. Nevertheless, the large-scale low-cost synthesis of high-quality bilayer MoS₂ still has much room for exploration, requiring further research. In this study, bilayer MoS₂ crystals grown on soda-lime glass substrate by sodium chloride (NaCl)-assisted chemical vapor deposition (CVD) were reported, the growth mechanism of NaCl in CVD of bilayer MoS₂ was analyzed, and the effects of molybdenum trioxide (Mo) mass and growth pressure on the growth of bilayer MoS₂ under the assistance of NaCl were further explored. Through characterization with an optical microscope, atomic force microscopy and Raman analyzer, the domain size of bilayer MoS₂ prepared by NaCl-assisted CVD was shown to reach 214 μm, which is a 4.2X improvement of the domain size of bilayer MoS₂ prepared without NaCl-assisted CVD. Moreover, the bilayer structure accounted for about 85%, which is a 2.1X improvement of bilayer MoS₂ prepared without NaCl-assisted CVD. This study provides a meaningful method for the growth of high-quality bilayer MoS₂, and promotes the large-scale and low-cost applications of CVD MoS₂.

Functionalization of 2D MoS2 Nanosheets with Various Metal and Metal Oxide Nanostructures: Their Properties and Application in Electrochemical Sensors

Two-dimensional transition metal dichalcogenides (2D TMDs) have gained considerable attention due to their distinctive properties and broad range of possible applications. One of the most widely studied transition metal dichalcogenides is molybdenum disulfide (MoS₂). The 2D MoS₂ nanosheets have unique and complementary properties to those of graphene, rendering them ideal electrode materials that could potentially lead to significant benefits in many electrochemical applications. These properties include tunable bandgaps, large surface areas, relatively high electron mobilities, and good optical and catalytic characteristics. Although the use of 2D MoS₂ nanosheets offers several advantages and excellent properties, surface functionalization of 2D MoS₂ is a potential route for further enhancing their properties and adding extra functionalities to the surface of the fabricated sensor. The functionalization of the material with various metal and metal oxide nanostructures has a significant impact on its overall electrochemical performance, improving various sensing parameters, such as selectivity, sensitivity, and stability. In this review, different methods of preparing 2D-layered MoS₂ nanomaterials, followed by different surface functionalization methods of these nanomaterials, are explored and discussed. Finally, the structure-properties relationship and electrochemical sensor applications over the last ten years are discussed. Emphasis is placed on the performance of 2D MoS₂ with respect to the performance of electrochemical sensors, thereby giving new insights into this unique material and providing a foundation for researchers of different disciplines who are interested in advancing the development of MoS₂-based sensors.

Morphotaxy of Layered van der Waals Materials

Layered van der Waals (vdW) materials have attracted significant attention due to their materials properties that can enhance diverse applications including next-generation computing, biomedical devices, and energy conversion and storage technologies. This class of materials is typically studied in the two-dimensional (2D) limit by growing them directly on bulk substrates or exfoliating them from parent layered crystals to obtain single or few layers that preserve the original bonding. However, these vdW materials can also function as a platform for obtaining additional phases of matter at the nanoscale. Here, we introduce and review a synthesis paradigm, morphotaxy, where low-dimensional materials are realized by using the shape of an initial nanoscale precursor to template growth or chemical conversion. Using morphotaxy, diverse non-vdW materials such as HfO₂ or InF₃ can be synthesized in ultrathin form by changing the composition but preserving the shape of the original 2D layered material. Morphotaxy can also enable diverse atomically precise heterojunctions and other exotic structures such as Janus materials. Using this morphotaxial approach, the family of low-dimensional materials can be substantially expanded, thus creating vast possibilities for future fundamental studies and applied technologies.

Thermal and mechanical characterization of nanoporous two-dimensional MoS2 membranes

For practical application, determining the thermal and mechanical characterization of nanoporous two-dimensional MoS₂ membranes is critical. To understand the influences of the temperature and porosity on the mechanical properties of single-layer MoS₂ membrane, uniaxial and biaxial tensions were conducted using molecular dynamics simulations. It was found that Young’s modulus, ultimate strength, and fracture strain reduce with the temperature increases. At the same time, porosity effects were found to cause a decrease in the ultimate strength, fracture strain, and Young’s modulus of MoS₂ membranes. Because the pore exists, the most considerable stresses will be concentrated around the pore site throughout uniaxial and biaxial tensile tests, increasing the possibility of fracture compared to tensing the pristine membrane. Moreover, this article investigates the impacts of temperature, porosity, and length size on the thermal conductivity of MoS₂ membrane using the non-equilibrium molecular dynamics (NEMD) method. The results show that the thermal conductivity of the MoS₂ membrane is strongly dependent on the temperature, porosity, and length size. Specifically, the thermal conductivity decreases as the temperature increases, and the thermal conductivity reduces as the porosity density increases. Interestingly, the thermal and mechanical properties of the pristine MoS₂ membrane are similar in armchair and zigzag directions.

Molybdenum Oxide Nanoparticle Aggregates Grown by Chemical Vapor Transport

In this study, the advanced chemical vapor transport (CVT) method in combination with the quenching effect is introduced for creating molybdenum oxide nanoparticle arrays, composed of the hierarchical structure of fine nanoparticles (NPs), which are vertically grown with a homogeneous coverage on the individual carbon fibers of carbon fiber paper (CFP) substrates. The obtained molybdenum oxide NPs hold a metastable high-temperature γ-Mo₄O₁₁ phase along with a stable α-MoO₃ phase by the quenching effect. Furthermore, such a quenching effect forms thinner and smaller nanoparticle aggregates by suppressing the growth and coalescence of primary particles. The molybdenum oxide nanoparticle aggregates are prepared using two different types of precursors: MoO₃ and a 1:1 (mol/mol) mixture of MoO₃ and activated carbon. The results characterized using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, and Fourier-transform infrared spectroscopy show that the relative amount of α-MoO₃ to γ-Mo₄O₁₁ within the prepared NPs is dependent on the precursor type; a lower amount of α-MoO₃ to γ-Mo₄O₁₁ is obtained in the NPs prepared using the mixed precursor of MoO₃ and carbon. This processing–structure landscape study can serve as the groundwork for the development of high-performance nanomaterials in various electronic and catalytic applications.

Chemical vapor deposition merges MoS2 grains into high-quality and centimeter-scale films on Si/SiO2

Two-dimensional molybdenum disulfide (MoS2) has attracted increasing attention due to its promise for next-generation electronics. To realize MoS2-based electronics, however, a synthesis method is required that produces a uniform single-layer material and that is compatible with existing semiconductor fabrication techniques. Here, we demonstrate that uniform films of single-layer MoS2 can be directly produced on Si/SiO2 at wafer-scale without the use of catalysts or promoters. Control of the precursor transport through oxygen dosing yielded complete coverage and increased connectivity between crystalline MoS2 domains. Spectroscopic characterization and carrier transport measurements furthermore revealed a reduced density of defects compared to conventional chemical vapor deposition growth that increased the quantum yield over ten-fold. To demonstrate the impact of enhanced scale and optoelectronic performance, centimeter-scale arrays of MoS2 photosensors were produced that demonstrate unprecedentedly high and uniform responsivity. Our approach improves the prospect of MoS2 for future applications.

Thermal Rectifier and Thermal Transistor of 1T/2H MoS2 for Heat Flow Management

Thermal rectifiers and thermal transistors are expected to be widely used for efficient thermal management and energy cascade utilization due to their excellent directional thermal management. Two-dimensional micro/nano materials have huge potential in the applications of thermal transistors, thermal logic circuits, and thermal rectifiers owing to the phase transition and thermal rectification phenomenon. Herein, a lithium intercalation method was used to transform 2H-MoS₂ into the 1T phase with a purity of 76%, and a suspended microelectrode was applied to measure the thermal conductivity and thermal rectification coefficient of the same MoS₂ film with 1T and 2H phases in suit. The thermal conductivity and thermal rectification effect of two-phase MoS₂ couple with its phase state and structure were also obtained. The results demonstrate that the thermal conductivities of MoS₂ in both 1T and 2H phases decrease with increasing temperature. It is also found that the thermal rectification coefficient has no obvious dependence on the temperature and phase change but the asymmetric structure. Furthermore, a thermal rectifier and transistor with a high thermal rectification effect are designed. The direction and magnitude of heat flow through the samples can be effectively controlled and managed by adjusting the phase, size, and structural asymmetry of the different samples. The maximum thermal rectification coefficient of the thermal rectifiers is up to 0.8.

Shape controllable MoS2 nanocrystals prepared by the single precursor route for electrocatalytic hydrogen evolution

MoS₂ has attracted great attention as a prospective electrocatalyst for generating hydrogen via water electrolysis due to its abundant and inexpensive sources. However, bulk MoS₂ has weak electrocatalytic activity because of its low electrical conductivity and few edge-active sites. Controllable synthesis of MoS₂ with ultrasmall size or complex morphology may be an available strategy to boost its conductivity and edge-active sites. Herein, a facile single-precursor strategy was developed to prepare nanoscale MoS₂ with various morphologies, including quantum dots, nanorods, nanoribbons, and nanosheets. In-depth studies show that the formation of MoS₂ with various shapes is determined by both kinetic and thermodynamic factors such as reaction time and temperature. Electrocatalytic tests reveal that MoS₂ quantum dots have high electrocatalytic performance with a low overpotential of 255 mV and a small Tafel slope of 66 mV dec⁻¹ due to the abundant exposed active edges and excellent intrinsic conductivity.

A facile single-precursor route was designed for the synthesis of shape- and size-controllable MoS₂ nanocrystals, including MoS₂ QDs, nanorods, nanoribbons, and nanosheets. Among them, MoS₂ QDs exhibit higher electrocatalytic activity in HRE.

Soft Bioelectronics Based on Nanomaterials

Recent advances in nanostructured materials and unconventional device designs have transformed the bioelectronics from a rigid and bulky form into a soft and ultrathin form and brought enormous advantages to the bioelectronics. For example, mechanical deformability of the soft bioelectronics and thus its conformal contact onto soft curved organs such as brain, heart, and skin have allowed researchers to measure high-quality biosignals, deliver real-time feedback treatments, and lower long-term side-effects in vivo. Here, we review various materials, fabrication methods, and device strategies for flexible and stretchable electronics, especially focusing on soft biointegrated electronics using nanomaterials and their composites. First, we summarize top-down material processing and bottom-up synthesis methods of various nanomaterials. Next, we discuss state-of-the-art technologies for intrinsically stretchable nanocomposites composed of nanostructured materials incorporated in elastomers or hydrogels. We also briefly discuss unconventional device design strategies for soft bioelectronics. Then individual device components for soft bioelectronics, such as biosensing, data storage, display, therapeutic stimulation, and power supply devices, are introduced. Afterward, representative application examples of the soft bioelectronics are described. A brief summary with a discussion on remaining challenges concludes the review.

Revealing the Brønsted-Evans-Polanyi relation in halide-activated fast MoS2 growth toward millimeter-sized 2D crystals

Achieving large-size two-dimensional (2D) crystals is key to fully exploiting their remarkable functionalities and application potentials. Chemical vapor deposition growth of 2D semiconductors such as monolayer MoS2 has been reported to be activated by halide salts, for which various investigations have been conducted to understand the underlying mechanism from different aspects. Here, we provide experimental evidence showing that the MoS2 growth dynamics are halogen dependent through the Brønsted-Evans-Polanyi relation, based on which we build a growth model by considering MoS2 edge passivation by halogens, and theoretically reproduce the trend of our experimental observations. These mechanistic understandings enable us to further optimize the fast growth of MoS2 and reach record-large domain sizes that should facilitate practical applications.

A Novel Carbon-Assisted Chemical Vapor Deposition Growth of Large-Area Uniform Monolayer MoS2 and WS2

Monolayer MoS₂ can be used for various applications such as flexible optoelectronics and electronics due to its exceptional optical and electronic properties. For these applications, large-area synthesis of high-quality monolayer MoS₂ is highly desirable. However, the conventional chemical vapor deposition (CVD) method using MoO₃ and S powder has shown limitations in synthesizing high-quality monolayer MoS₂ over a large area on a substrate. In this study, we present a novel carbon cloth-assisted CVD method for large-area uniform synthesis of high-quality monolayer MoS₂. While the conventional CVD method produces thick MoS₂ films in the center of the substrate and forms MoS₂ monolayers at the edge of the thick MoS₂ films, our carbon cloth-assisted CVD method uniformly grows high-quality monolayer MoS₂ in the center of the substrate. The as-synthesized monolayer MoS₂ was characterized in detail by Raman/photoluminescence spectroscopy, atomic force microscopy, and transmission electron microscopy. We reveal the growth process of monolayer MoS₂ initiated from MoS₂ seeds by synthesizing monolayer MoS₂ with varying reaction times. In addition, we show that the CVD method employing carbon powder also produces uniform monolayer MoS₂ without forming thick MoS₂ films in the center of the substrate. This confirms that the large-area growth of monolayer MoS₂ using the carbon cloth-assisted CVD method is mainly due to reducing properties of the carbon material, rather than the effect of covering the carbon cloth. Furthermore, we demonstrate that our carbon cloth-assisted CVD method is generally applicable to large-area uniform synthesis of other monolayer transition metal dichalcogenides, including monolayer WS₂.

Recent Progress in Emerging Two-Dimensional Transition Metal Carbides

As a new member in two-dimensional materials family, transition metal carbides (TMCs) have many excellent properties, such as chemical stability, in-plane anisotropy, high conductivity and flexibility, and remarkable energy conversation efficiency, which predispose them for promising applications as transparent electrode, flexible electronics, broadband photodetectors and battery electrodes. However, up to now, their device applications are in the early stage, especially because their controllable synthesis is still a great challenge. This review systematically summarized the state-of-the-art research in this rapidly developing field with particular focus on structure, property, synthesis and applicability of TMCs. Finally, the current challenges and future perspectives are outlined for the application of 2D TMCs.

Single-Crystal MoS2 Monolayer Wafer Grown on Au (111) Film Substrates

Monolayer transition metal dichalcogenides (TMDCs) with high crystalline quality are important channel materials for next-generation electronics. Researches on TMDCs have been accelerated by the development of chemical vapor deposition (CVD). However, antiparallel domains and twin grain boundaries (GBs) usually form in CVD synthesis due to the special threefold symmetry of TMDCs lattices. The existence of GBs severely reduces the electrical and photoelectrical properties of TMDCs, thus restricting their practical applications. Herein, the epitaxial growth of single crystal MoS₂ (SC-MoS₂ ) monolayer is reported on Au (111) film across a two-inch c-plane sapphire wafer by CVD. The MoS₂ domains obtained on Au (111) film exhibit unidirectional alignment with zigzag edges parallel to the <110> direction of Au (111). Experimental results indicated that the unidirectional growth of MoS₂ domains on Au (111) is a temperature-guided epitaxial growth mode. The high growth temperature provides enough energy for the rotation of the MoS₂ seeds to find the most favorable orientation on Au (111) to achieve a unidirectional ratio of over 99%. Moreover, the unidirectional MoS₂ domains seamlessly stitched into single crystal monolayer without GBs formation. The progress achieved in this work will promote the practical applications of TMDCs in microelectronics.

Recent progress on kinetic control of chemical vapor deposition growth of high-quality wafer-scale transition metal dichalcogenides

2D transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique physical properties. Chemical vapor deposition (CVD) is generally a promising method to prepare ideal TMD films with high uniformity, large domain size, good single-crystallinity, etc., at wafer-scale for commercial uses. However, the CVD-grown TMD samples often suffer from poor quality due to the improper control of reaction kinetics and lack of understanding about the phenomenon. In this review, we focus on several key challenges in the controllable CVD fabrication of high-quality wafer-scale TMD films and highlight the importance of the control of precursor concentration, nucleation density, and oriented growth. The remaining difficulties in the field and prospective directions of the related topics are further summarized.