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Wang J, Gadenne V, Patrone L, Raimundo JM. Self-Assembled Monolayers of Push-Pull Chromophores as Active Layers and Their Applications. Molecules 2024; 29:559. [PMID: 38338304 PMCID: PMC10856137 DOI: 10.3390/molecules29030559] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2023] [Revised: 01/17/2024] [Accepted: 01/18/2024] [Indexed: 02/12/2024] Open
Abstract
In recent decades, considerable attention has been focused on the design and development of surfaces with defined or tunable properties for a wide range of applications and fields. To this end, self-assembled monolayers (SAMs) of organic compounds offer a unique and straightforward route of modifying and engineering the surface properties of any substrate. Thus, alkane-based self-assembled monolayers constitute one of the most extensively studied organic thin-film nanomaterials, which have found wide applications in antifouling surfaces, the control of wettability or cell adhesion, sensors, optical devices, corrosion protection, and organic electronics, among many other applications, some of which have led to their technological transfer to industry. Nevertheless, recently, aromatic-based SAMs have gained importance as functional components, particularly in molecular electronics, bioelectronics, sensors, etc., due to their intrinsic electrical conductivity and optical properties, opening up new perspectives in these fields. However, some key issues affecting device performance still need to be resolved to ensure their full use and access to novel functionalities such as memory, sensors, or active layers in optoelectronic devices. In this context, we will present herein recent advances in π-conjugated systems-based self-assembled monolayers (e.g., push-pull chromophores) as active layers and their applications.
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Affiliation(s)
- Junlong Wang
- Aix Marseille Univ, CNRS, CINaM, AMUTech, 13288 Marseille, France;
- ISEN, Université de Toulon, Aix Marseille Univ, CNRS, IM2NP, AMUtech, 83041 Toulon ou Marseille, France;
| | - Virginie Gadenne
- ISEN, Université de Toulon, Aix Marseille Univ, CNRS, IM2NP, AMUtech, 83041 Toulon ou Marseille, France;
| | - Lionel Patrone
- ISEN, Université de Toulon, Aix Marseille Univ, CNRS, IM2NP, AMUtech, 83041 Toulon ou Marseille, France;
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2
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Zhao S, Zhao Y, Li C, Wang W, Liu HY, Cui L, Li X, Yang Z, Zhang A, Wang Y, Lin Y, Hao T, Yin J, Kang J, Zhu J. Aramid Nanodielectrics for Ultraconformal Transparent Electronic Skins. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305479. [PMID: 37705254 DOI: 10.1002/adma.202305479] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2023] [Revised: 09/09/2023] [Indexed: 09/15/2023]
Abstract
On-skin electronics require minimal thicknesses and decent transparency for conformal contact, imperceptible wearing, and visual aesthetics. It is challenging to search for advanced ultrathin dielectrics capable of supporting the active components while maintaining bending softness, easy handling, and wafer-scale processability. Here, self-delaminated aramid nanodielectrics (ANDs) are demonstrated, enabling any skin-like electronics easily exfoliated from the processing substrates after complicated nanofabrication. In addition, ANDs are mechanically strong, chemically and thermally stable, transparent and breathable, therefore are ideal substrates for soft electronics. As demonstrated, compliant epidermal electrodes comprising silver nanowires and ANDs can successfully record high-quality electromyogram signals with low motion artifacts and satisfying sweat and water resistance. Furthermore, ANDs can serve as both substrates and dielectrics in single-walled carbon nanotube field-effect transistors (FETs) with a merely 160-nm thickness, which can be operated within 4 V with on/off ratios of 1.4 ± 0.5 × 105 , mobilities of 39.9 ± 2.2 cm2 V-1 s-1 , and negligible hysteresis. The ultraconformal FETs can function properly when wrapped around human hair without any degradation in performance.
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Affiliation(s)
- Sanchuan Zhao
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Yingtao Zhao
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Chenning Li
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Wei Wang
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Hai-Yang Liu
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Lei Cui
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Xiang Li
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Zhenhua Yang
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Anni Zhang
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Yurou Wang
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Yuxuan Lin
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Tailang Hao
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Jun Yin
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
| | - Joohoon Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jian Zhu
- School of Materials Science and Engineering, National Institute for Advanced Materials Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, P. R. China
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3
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Yu SH, Hassan SZ, So C, Kang M, Chung DS. Molecular-Switch-Embedded Solution-Processed Semiconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203401. [PMID: 35929102 DOI: 10.1002/adma.202203401] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2022] [Revised: 08/03/2022] [Indexed: 06/15/2023]
Abstract
Recent improvements in the performance of solution-processed semiconductor materials and optoelectronic devices have shifted research interest to the diversification/advancement of their functionality. Embedding a molecular switch capable of transition between two or more metastable isomers by light stimuli is one of the most straightforward and widely accepted methods to potentially realize the multifunctionality of optoelectronic devices. A molecular switch embedded in a semiconductor can effectively control various parameters such as trap-level, dielectric constant, electrical resistance, charge mobility, and charge polarity, which can be utilized in photoprogrammable devices including transistors, memory, and diodes. This review classifies the mechanism of each optoelectronic transition driven by molecular switches regardless of the type of semiconductor material or molecular switch or device. In addition, the basic characteristics of molecular switches and the persisting technical/scientific issues corresponding to each mechanism are discussed to help researchers. Finally, interesting yet infrequently reported applications of molecular switches and their mechanisms are also described.
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Affiliation(s)
- Seong Hoon Yu
- Department of Chemical Engineering, Pohang University of Science & Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Syed Zahid Hassan
- Department of Chemical Engineering, Pohang University of Science & Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Chan So
- Department of Chemical Engineering, Pohang University of Science & Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Mingyun Kang
- Department of Chemical Engineering, Pohang University of Science & Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Dae Sung Chung
- Department of Chemical Engineering, Pohang University of Science & Technology (POSTECH), Pohang, 37673, Republic of Korea
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4
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Choi J, Lee C, Kang J, Lee C, Lee SM, Oh J, Choi SY, Im SG. A Sub-20 nm Organic/Inorganic Hybrid Dielectric for Ultralow-Power Organic Thin-Film Transistor (OTFT) With Enhanced Operational Stability. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2203165. [PMID: 36026583 DOI: 10.1002/smll.202203165] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2022] [Revised: 07/15/2022] [Indexed: 06/15/2023]
Abstract
Organic/inorganic hybrid materials are utilized extensively as gate dielectric layers in organic thin-film transistors (OTFTs). However, inherently low dielectric constant of organic materials and lack of a reliable deposition process for organic layers hamper the broad application of hybrid dielectric materials. Here, a universal strategy to synthesize high-k hybrid dielectric materials by incorporating a high-k polymer layer on top of various inorganic layers generated by different fabrication methods, including AlOx and HfOx , is presented. Those hybrid dielectrics commonly exhibit high capacitance (>300 nF·cm-2 ) as well as excellent insulating properties. A vapor-phase deposition method is employed for precise control of the polymer film thickness. The ultralow-voltage (<3 V) OTFTs are demonstrated based on the hybrid dielectric layer with 100% yield and uniform electrical characteristics. Moreover, the exceptionally high stability of OTFTs for long-term operation (current change less than 5% even under 30 h of voltage stress at 2.0 MV·cm-1 ) is achieved. The hybrid dielectric is fully compatible with various substrates, which allows for the demonstration of intrinsically flexible OTFTs on the plastic substrate. It is believed that this approach for fabricating hybrid dielectrics by introducing the high-k organic material can be a promising strategy for future low-power, flexible electronics.
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Affiliation(s)
- Junhwan Choi
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Chungryeol Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Juyeon Kang
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Changhyeon Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Seung Min Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Jungyeop Oh
- School of Electrical Engineering, Graphene/2D Materials Research Center, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Sung-Yool Choi
- School of Electrical Engineering, Graphene/2D Materials Research Center, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Sung Gap Im
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
- KAIST Institute for NanoCentury (KINC), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
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5
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Wang Z, Yu N, Zhang J, Ren Q, Li M, Chen Z. Nanoscale Hf-hematoporphyrin frameworks for synergetic sonodynamic/radiation therapy of deep-seated tumors. J Colloid Interface Sci 2022; 626:803-814. [DOI: 10.1016/j.jcis.2022.06.174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/18/2022] [Revised: 06/14/2022] [Accepted: 06/29/2022] [Indexed: 10/31/2022]
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6
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Stallings K, Smith J, Chen Y, Zeng L, Wang B, Di Carlo G, Bedzyk MJ, Facchetti A, Marks TJ. Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:15399-15408. [PMID: 33779161 DOI: 10.1021/acsami.1c00249] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Metal oxide semiconductors, such as amorphous indium gallium zinc oxide (a-IGZO), have made impressive strides as alternatives to amorphous silicon for electronics applications. However, to achieve the full potential of these semiconductors, compatible unconventional gate dielectric materials must also be developed. To this end, solution-processable self-assembled nanodielectrics (SANDs) composed of structurally well-defined and durable nanoscopic alternating organic (e.g., stilbazolium) and inorganic oxide (e.g., ZrOx and HfOx) layers offer impressive capacitances and low processing temperatures (T ≤ 200 °C). While SANDs have been paired with diverse semiconductors and have yielded excellent device metrics, they have never been implemented in the most technologically relevant top-gate thin-film transistor (TFT) architecture. Here, we combine solution-processed a-IGZO with solution-processed four-layer Hf-SAND to fabricate top-gate TFTs, which exhibit impressive electron mobilities (μSAT = 19.4 cm2 V-1 s-1) and low threshold voltages (Vth = 0.83 V), subthreshold slopes (SS = 293 mV/dec), and gate leakage currents (10-10 A) as well as high bias stress stability.
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Affiliation(s)
- Katie Stallings
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Jeremy Smith
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Yao Chen
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Li Zeng
- Applied Physics Program and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Binghao Wang
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Gabriele Di Carlo
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Michael J Bedzyk
- Department of Materials Science and Engineering, Applied Physics Program and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Antonio Facchetti
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
- Flexterra Inc., 8025 Lamon Avenue, Skokie, Illinois 60077, United States
| | - Tobin J Marks
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
- Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
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7
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Huang W, Yu X, Zeng L, Wang B, Takai A, Di Carlo G, Bedzyk MJ, Marks TJ, Facchetti A. Ultraviolet Light-Densified Oxide-Organic Self-Assembled Dielectrics: Processing Thin-Film Transistors at Room Temperature. ACS APPLIED MATERIALS & INTERFACES 2021; 13:3445-3453. [PMID: 33416304 DOI: 10.1021/acsami.0c20345] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Low-temperature, solution-processable, high-capacitance, and low-leakage gate dielectrics are of great interest for unconventional electronics. Here, we report a near room temperature ultraviolet densification (UVD) methodology for realizing high-performance organic-inorganic zirconia self-assembled nanodielectrics (UVD-ZrSANDs). These UVD-ZrSAND multilayers are grown from solution in ambient, densified by UV radiation, and characterized by X-ray reflectivity, atomic force microscopy, X-ray photoelectron spectroscopy, and capacitance measurements. The resulting UVD-ZrSAND films exhibit large capacitances of >700 nF/cm2 and low leakage current densities of <10-7 A/cm2, which rival or exceed those synthesized by traditional thermal methods. Both the p-type organic semiconductor pentacene and the n-type metal oxide semiconductor In2O3 were used to investigate UVD-ZrSANDs as the gate dielectric in thin-film transistors, affording mobilities of 0.58 and 26.21 cm2/(V s), respectively, at a low gate voltage of 2 V. These results represent a significant advance in fabricating ultra-thin high-performance dielectrics near room temperature and should facilitate their integration into diverse electronic technologies.
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Affiliation(s)
- Wei Huang
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Xinge Yu
- Department of Biomedical Engineering, City University of Hong Kong, 83 Tat Chee Ave., Kowloon 000000, Hong Kong
| | - Li Zeng
- Department of Materials Science and Engineering, Applied Physics Program and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Binghao Wang
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Atsuro Takai
- Molecular Design and Function Group, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan
| | - Gabriele Di Carlo
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Michael J Bedzyk
- Department of Materials Science and Engineering, Applied Physics Program and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Tobin J Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
- Flexterra Corporation, Skokie, Illinois 60077, United States
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8
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Bhowal R, Balaraman AA, Ghosh M, Dutta S, Dey KK, Chopra D. Probing Atomistic Behavior To Unravel Dielectric Phenomena in Charge Transfer Cocrystals. J Am Chem Soc 2020; 143:1024-1037. [DOI: 10.1021/jacs.0c11459] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Affiliation(s)
- Rohit Bhowal
- Department of Chemistry, Indian Institute of Science Education and Research Bhopal, Bhopal Bypass Road, Bhauri, Bhopal 462066, Madhya Pradesh, India
| | - Anina Anju Balaraman
- Materials Science Division, Council of Scientific and Industrial Research, National Aerospace Laboratories, Kodihalli, Bengaluru 560017, Karnataka, India
| | - Manasi Ghosh
- Physics Section, Mahila Maha Vidyalaya, Banaras Hindu University, Varanasi 221005, Uttar Pradesh, India
| | - Soma Dutta
- Materials Science Division, Council of Scientific and Industrial Research, National Aerospace Laboratories, Kodihalli, Bengaluru 560017, Karnataka, India
| | - Krishna Kishor Dey
- Department of Physics, Dr. Harisingh Gour Central University, Sagar 470003, Madhya Pradesh, India
| | - Deepak Chopra
- Department of Chemistry, Indian Institute of Science Education and Research Bhopal, Bhopal Bypass Road, Bhauri, Bhopal 462066, Madhya Pradesh, India
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9
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Sizov AS, Agina EV, Ponomarenko SA. Self-assembled interface monolayers for organic and hybrid electronics. RUSSIAN CHEMICAL REVIEWS 2019. [DOI: 10.1070/rcr4897] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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10
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Zakaria MB, Nagata T, Chikyow T. Mesostructured HfO 2/Al 2O 3 Composite Thin Films with Reduced Leakage Current for Ion-Conducting Devices. ACS OMEGA 2019; 4:14680-14687. [PMID: 31552307 PMCID: PMC6751548 DOI: 10.1021/acsomega.9b01095] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/16/2019] [Accepted: 08/01/2019] [Indexed: 06/10/2023]
Abstract
Mesoporous hafnium dioxide (HfO2) thin films (around 20 nm thick) were fabricated by a sol-gel-based spin-coating process, followed by an annealing process at 600 °C to realize the ion-conducting media for the ionics (e.g., Na+ and K+ for rechargeable ion batteries). Another film of aluminum metal (10 nm thick) was deposited by direct current sputtering to soak into the mesopores. A monitored thermal treatment process at 500 °C in the air yields mesostructured HfO2/Al2O3 composite thin films. However, aluminum dioxide (Al2O3) is formed during annealing as an insulating film to reduce the leakage current while retaining the ionic conductivity. The obtained mesostructured HfO2/Al2O3 films show a leakage current at 3.2 × 10-9 A cm-2, which is significantly smaller than that of the mesoporous HfO2 film (1.37 × 10-5 A cm-2) or HfO2/Al film (0.037 A cm-2) at a bias voltage of 1.0 V, which is enough for ion conduction. In the meantime, among all the thin films, the mesostructured HfO2/Al2O3 composite thin films display the smallest Nyquist arc diameter in 1.0 M KOH electrolyte, implying a lower impedance at the electrode/electrolyte interface and reflecting a better ion diffusion and movement.
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Affiliation(s)
- Mohamed Barakat Zakaria
- International
Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Department
of Chemistry, Faculty of Science, Tanta
University, Tanta, Gharbeya 31527, Egypt
| | - Takahiro Nagata
- International
Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Toyohiro Chikyow
- International
Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Materials
Data & Integrated System (MaDIS), National
Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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11
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Sun C, Wang MS, Guo GC. Covalently Bonded Pillared Layered Bromoplumbate with High Thermal Stability: High Capacitance Gain after Photoinduced Electron Transfer. ACS APPLIED MATERIALS & INTERFACES 2019; 11:30713-30718. [PMID: 31366190 DOI: 10.1021/acsami.9b06375] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Improving the stability and photoelectric properties are current aims in the field of inorganic-organic hybrid lead halides. In this work, a new covalently bonded pillared layered bromoplumbate, [Pb3Br6(CV)]n, was prepared using a photoactive zwitterion viologen, N,N'-4,4'-bipyridiniodipropionate (CV), as a ligand. It has a high thermal stability in air and shows a remarkable increase of capacitance after photoinduced electron transfer (PIET). The observed dielectric switch ratio of ∼689% at 3 kHz exceeded all reported values at room temperature for switchable dielectric materials. The capacitance gain was derived from the redistribution of electrons after PIET from the lead-halide layer to organic π-aggregates, so that the activation energy of hopping polarizability was significantly reduced.
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Affiliation(s)
- Cai Sun
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter , Chinese Academy of Sciences , Fuzhou , Fujian 350002 , People's Republic of China
| | - Ming-Sheng Wang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter , Chinese Academy of Sciences , Fuzhou , Fujian 350002 , People's Republic of China
| | - Guo-Cong Guo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter , Chinese Academy of Sciences , Fuzhou , Fujian 350002 , People's Republic of China
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12
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Senanayak SP, Sangwan VK, McMorrow JJ, Everaerts K, Chen Z, Facchetti A, Hersam MC, Marks TJ, Narayan KS. Self-Assembled Photochromic Molecular Dipoles for High-Performance Polymer Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2018; 10:21492-21498. [PMID: 29847908 DOI: 10.1021/acsami.8b05401] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The development of high-performance multifunctional polymer-based electronic circuits is a major step toward future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed dielectric super-lattice structures with photochromic azobenzene molecules. These nanodielectrics possessing ionic, molecular, and atomic polarization are utilized in polymer thin-film transistors (TFTs) to realize high-performance electronics with a p-type field-effect mobility (μFET) exceeding 2 cm2 V-1 s-1. A crossover in the transport mechanism from electrostatic dipolar disorder to ionic-induced disorder is observed in the transistor characteristics over a range of temperatures. The facile supramolecular design allows the possibility to optically control the extent of molecular and ionic polarization in the ultrathin nanodielectric. Thus, we demonstrate a 3-fold increase in the capacitance from 0.1 to 0.34 μF/cm2, which results in a 200% increase in TFT channel current.
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Affiliation(s)
- Satyaprasad P Senanayak
- Chemistry and Physics of Materials Unit , Jawaharlal Nehru Centre for Advanced Scientific Research , Bangalore 560064 , India
- Optoelectronics Group , Cavendish Laboratory, University of Cambridge , JJ Thomson Avenue , Cambridge CB3 0HE , U.K
| | | | | | | | - Zhihua Chen
- Flexterra Inc. , 8025 Lamon Avenue , Skokie , Illinois 60077 , United States
| | - Antonio Facchetti
- Flexterra Inc. , 8025 Lamon Avenue , Skokie , Illinois 60077 , United States
| | | | | | - K S Narayan
- Chemistry and Physics of Materials Unit , Jawaharlal Nehru Centre for Advanced Scientific Research , Bangalore 560064 , India
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13
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Garlapati SK, Divya M, Breitung B, Kruk R, Hahn H, Dasgupta S. Printed Electronics Based on Inorganic Semiconductors: From Processes and Materials to Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1707600. [PMID: 29952112 DOI: 10.1002/adma.201707600] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/29/2017] [Revised: 03/20/2018] [Indexed: 06/08/2023]
Abstract
Following the ever-expanding technological demands, printed electronics has shown palpable potential to create new and commercially viable technologies that will benefit from its unique characteristics, such as, large-area and wide range of substrate compatibility, conformability and low-cost. Through the last few decades, printed/solution-processed field-effect transistors (FETs) and circuits have witnessed immense research efforts, technological growth and increased commercial interests. Although printing of functional inks comprising organic semiconductors has already been initiated in early 1990s, gradually the attention, at least partially, has been shifted to various forms of inorganic semiconductors, starting from metal chalcogenides, oxides, carbon nanotubes and very recently to graphene and other 2D semiconductors. In this review, the entire domain of printable inorganic semiconductors is considered. In fact, thanks to the continuous development of materials/functional inks and novel design/printing strategies, the inorganic printed semiconductor-based circuits today have reached an operation frequency up to several hundreds of kilohertz with only a few nanosecond time delays at the individual FET/inverter levels; in this regard, often circuits based on hybrid material systems have been found to be advantageous. At the end, a comparison of relative successes of various printable inorganic semiconductor materials, the remaining challenges and the available future opportunities are summarized.
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Affiliation(s)
- Suresh Kumar Garlapati
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Mitta Divya
- Department of Materials Engineering, Indian Institute of Science, Bangalore, 560012, India
| | - Ben Breitung
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Robert Kruk
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Horst Hahn
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
- KIT-TUD Joint Research Laboratory Nanomaterials, Technische Universität Darmstadt (TUD), Institute of Materials Science, Jovanka-Bontschits-Str. 2, ,64287, Darmstadt, Germany
| | - Subho Dasgupta
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
- Department of Materials Engineering, Indian Institute of Science, Bangalore, 560012, India
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14
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Liu A, Zhu H, Sun H, Xu Y, Noh YY. Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1706364. [PMID: 29904984 DOI: 10.1002/adma.201706364] [Citation(s) in RCA: 43] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2017] [Revised: 03/07/2018] [Indexed: 06/08/2023]
Abstract
The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large-area electronics, particularly thin-film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High-permittivity (κ) oxide dielectrics are a key component for achieving low-voltage and high-performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO2 with high-κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low-cost devices, tremendous efforts have been devoted to vacuum-free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high-κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high-κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO2 is outlined. Recent achievements of solution-processed high-κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water-induced, self-combustion reaction, and energy-assisted post treatments, for the realization of flexible electronics and circuits are discussed.
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Affiliation(s)
- Ao Liu
- Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620, Republic of Korea
| | - Huihui Zhu
- Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620, Republic of Korea
| | - Huabin Sun
- Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620, Republic of Korea
| | - Yong Xu
- Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620, Republic of Korea
| | - Yong-Young Noh
- Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620, Republic of Korea
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15
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Wang B, Huang W, Chi L, Al-Hashimi M, Marks TJ, Facchetti A. High- k Gate Dielectrics for Emerging Flexible and Stretchable Electronics. Chem Rev 2018; 118:5690-5754. [PMID: 29785854 DOI: 10.1021/acs.chemrev.8b00045] [Citation(s) in RCA: 178] [Impact Index Per Article: 29.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2023]
Abstract
Recent advances in flexible and stretchable electronics (FSE), a technology diverging from the conventional rigid silicon technology, have stimulated fundamental scientific and technological research efforts. FSE aims at enabling disruptive applications such as flexible displays, wearable sensors, printed RFID tags on packaging, electronics on skin/organs, and Internet-of-things as well as possibly reducing the cost of electronic device fabrication. Thus, the key materials components of electronics, the semiconductor, the dielectric, and the conductor as well as the passive (substrate, planarization, passivation, and encapsulation layers) must exhibit electrical performance and mechanical properties compatible with FSE components and products. In this review, we summarize and analyze recent advances in materials concepts as well as in thin-film fabrication techniques for high- k (or high-capacitance) gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductors. Since thin-film transistors (TFTs) are the key enablers of FSE devices, we discuss TFT structures and operation mechanisms after a discussion on the needs and general requirements of gate dielectrics. Also, the advantages of high- k dielectrics over low- k ones in TFT applications were elaborated. Next, after presenting the design and properties of high- k polymers and inorganic, electrolyte, and hybrid dielectric families, we focus on the most important fabrication methodologies for their deposition as TFT gate dielectric thin films. Furthermore, we provide a detailed summary of recent progress in performance of FSE TFTs based on these high- k dielectrics, focusing primarily on emerging semiconductor types. Finally, we conclude with an outlook and challenges section.
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Affiliation(s)
- Binghao Wang
- Department of Chemistry and the Materials Research Center , Northwestern University , 2145 Sheridan Road , Evanston , Illinois 60208 , United States.,Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices , Soochow University , 199 Ren'ai Road , Suzhou 215123 , China
| | - Wei Huang
- Department of Chemistry and the Materials Research Center , Northwestern University , 2145 Sheridan Road , Evanston , Illinois 60208 , United States
| | - Lifeng Chi
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices , Soochow University , 199 Ren'ai Road , Suzhou 215123 , China
| | - Mohammed Al-Hashimi
- Department of Chemistry , Texas A&M University at Qatar , PO Box 23874, Doha , Qatar
| | - Tobin J Marks
- Department of Chemistry and the Materials Research Center , Northwestern University , 2145 Sheridan Road , Evanston , Illinois 60208 , United States
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center , Northwestern University , 2145 Sheridan Road , Evanston , Illinois 60208 , United States.,Flexterra Corporation , 8025 Lamon Avenue , Skokie , Illinois 60077 , United States
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16
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Zeng L, Turrisi R, Fu B, Emery JD, Walker AR, Ratner MA, Hersam MC, Facchetti AF, Marks TJ, Bedzyk MJ. Measuring Dipole Inversion in Self-Assembled Nano-Dielectric Molecular Layers. ACS APPLIED MATERIALS & INTERFACES 2018; 10:6484-6490. [PMID: 29378110 DOI: 10.1021/acsami.7b16160] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A self-assembled nanodielectric (SAND) is an ultrathin film, typically with periodic layer pairs of high-k oxide and phosphonic-acid-based π-electron (PAE) molecular layers. IPAE, having a molecular structure similar to that of PAE but with an inverted dipole direction, has recently been developed for use in thin-film transistors. Here we report that replacing PAE with IPAE in SAND-based thin-film transistors induces sizable threshold and turn-on voltage shifts, indicating the flipping of the built-in SAND polarity. The bromide counteranion (Br-) associated with the cationic stilbazolium portion of PAE or IPAE is of great importance, because its relative position strongly affects the electric dipole moment of the organic layer. Hence, a set of X-ray synchrotron measurements were designed and performed to directly measure and compare the Br- distributions within the PAE and IPAE SANDs. Two trilayer SANDs, consisting of a PAE or IPAE layer sandwiched between an HfOx and a ZrOx layer, were deposited on the SiOx surface of Si substrates or periodic Si/Mo multilayer substrates for X-ray reflectivity and X-ray standing wave measurements, respectively. Along with complementary DFT simulations, the spacings, elemental (Hf, Br, and Zr) distributions, molecular orientations, and Mulliken charge distributions of the PAE and IPAE molecules within each of the SAND trilayers were determined and correlated with the dipole inversion.
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Affiliation(s)
- Li Zeng
- Materials Research Science and Engineering Center, Northwestern University , Evanston, Illinois 60208, United States
| | - Riccardo Turrisi
- Materials Science Department, University of Milano-Bicocca , Via R. Cozzi 53, 20126 Milan, Italy
| | | | | | | | - Mark A Ratner
- Materials Research Science and Engineering Center, Northwestern University , Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Materials Research Science and Engineering Center, Northwestern University , Evanston, Illinois 60208, United States
| | | | - Tobin J Marks
- Materials Research Science and Engineering Center, Northwestern University , Evanston, Illinois 60208, United States
| | - Michael J Bedzyk
- Materials Research Science and Engineering Center, Northwestern University , Evanston, Illinois 60208, United States
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17
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Jo JW, Kim KH, Kim J, Ban SG, Kim YH, Park SK. High-Mobility and Hysteresis-Free Flexible Oxide Thin-Film Transistors and Circuits by Using Bilayer Sol-Gel Gate Dielectrics. ACS APPLIED MATERIALS & INTERFACES 2018; 10:2679-2687. [PMID: 29280381 DOI: 10.1021/acsami.7b10786] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
In this paper, we demonstrate high-performance and hysteresis-free solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) and high-frequency-operating seven-stage ring oscillators using a low-temperature photochemically activated Al2O3/ZrO2 bilayer gate dielectric. It was found that the IGZO TFTs with single-layer gate dielectrics such as Al2O3, ZrO2, or sodium-doped Al2O3 exhibited large hysteresis, low field-effect mobility, or unstable device operation owing to the interfacial/bulk trap states, insufficient band offset, or a substantial number of mobile ions present in the gate dielectric layer, respectively. To resolve these issues and to explain the underlying physical mechanisms, a series of electrical analyses for various single- and bilayer gate dielectrics was carried out. It is shown that compared to single-layer gate dielectrics, the Al2O3/ZrO2 gate dielectric exhibited a high dielectric constant of 8.53, low leakage current density (∼10-9 A cm-2 at 1 MV cm-1), and stable operation at high frequencies. Using the photochemically activated Al2O3/ZrO2 gate dielectric, the seven-stage ring oscillators operating at an oscillation frequency of ∼334 kHz with a propagation delay of <216 ns per stage were successfully demonstrated on a polymeric substrate.
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Affiliation(s)
- Jeong-Wan Jo
- School of Electrical and Electronics Engineering, Chung-Ang University , Seoul 06980, Korea
| | - Kwang-Ho Kim
- Korea Electronics Technology Institute , Seongnam 13509, Korea
| | - Jaeyoung Kim
- School of Advanced Materials Science and Engineering, and SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University , Suwon 16419, Korea
| | - Seok Gyu Ban
- School of Electrical and Electronics Engineering, Chung-Ang University , Seoul 06980, Korea
| | - Yong-Hoon Kim
- School of Advanced Materials Science and Engineering, and SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University , Suwon 16419, Korea
| | - Sung Kyu Park
- School of Electrical and Electronics Engineering, Chung-Ang University , Seoul 06980, Korea
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18
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Zhu J, Hersam MC. Assembly and Electronic Applications of Colloidal Nanomaterials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1603895. [PMID: 27862354 DOI: 10.1002/adma.201603895] [Citation(s) in RCA: 65] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2016] [Revised: 09/01/2016] [Indexed: 06/06/2023]
Abstract
Artificial solids and thin films assembled from colloidal nanomaterials give rise to versatile properties that can be exploited in a range of technologies. In particular, solution-based processes allow for the large-scale and low-cost production of nanoelectronics on rigid or mechanically flexible substrates. To achieve this goal, several processing steps require careful consideration, including nanomaterial synthesis or exfoliation, purification, separation, assembly, hybrid integration, and device testing. Using a ubiquitous electronic device - the field-effect transistor - as a platform, colloidal nanomaterials in three electronic material categories are reviewed systematically: semiconductors, conductors, and dielectrics. The resulting comparative analysis reveals promising opportunities and remaining challenges for colloidal nanomaterials in electronic applications, thereby providing a roadmap for future research and development.
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Affiliation(s)
- Jian Zhu
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois, 60208-3108, USA
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois, 60208-3108, USA
- Graduate Program in Applied Physics, Department of Chemistry, Department of Medicine, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL, 60208-3108, USA
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19
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Yu F, Wu S, Wang X, Zhang G, Lu H, Qiu L. Flexible and low-voltage organic phototransistors. RSC Adv 2017. [DOI: 10.1039/c6ra28821a] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
A stripping procedure was demonstrated to prepare ultra-smooth gate dielectric for flexible and low-voltage organic phototransistors.
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Affiliation(s)
- Fanfan Yu
- Key Lab of Special Display Technology
- Ministry of Education
- National Engineering Lab of Special Display Technology
- State Key Lab of Advanced Display Technology
- Academy of Opto-Electronic Technology
| | - Shaohua Wu
- Key Lab of Special Display Technology
- Ministry of Education
- National Engineering Lab of Special Display Technology
- State Key Lab of Advanced Display Technology
- Academy of Opto-Electronic Technology
| | - Xiaohong Wang
- Key Lab of Special Display Technology
- Ministry of Education
- National Engineering Lab of Special Display Technology
- State Key Lab of Advanced Display Technology
- Academy of Opto-Electronic Technology
| | - Guobing Zhang
- Key Lab of Special Display Technology
- Ministry of Education
- National Engineering Lab of Special Display Technology
- State Key Lab of Advanced Display Technology
- Academy of Opto-Electronic Technology
| | - Hongbo Lu
- Key Lab of Special Display Technology
- Ministry of Education
- National Engineering Lab of Special Display Technology
- State Key Lab of Advanced Display Technology
- Academy of Opto-Electronic Technology
| | - Longzhen Qiu
- Key Lab of Special Display Technology
- Ministry of Education
- National Engineering Lab of Special Display Technology
- State Key Lab of Advanced Display Technology
- Academy of Opto-Electronic Technology
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20
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Girard P, Hémez J, Silvestre V, Labrugère C, Lartigue L, Duvail JL, Ishow E. Strong Color Tuning of Self-Assembled Azo-Derived Phosphonic Acids upon Hydrogen Bonding. CHEMPHOTOCHEM 2016. [DOI: 10.1002/cptc.201600014] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Pauline Girard
- CEISAM-UMR CNRS 6230; Université de Nantes; 2 rue de la Houssinière 44322 Nantes France
- IMN-UMR CNRS 6502; Université de Nantes; 44322 Nantes France
| | - Julie Hémez
- CEISAM-UMR CNRS 6230; Université de Nantes; 2 rue de la Houssinière 44322 Nantes France
| | - Virginie Silvestre
- CEISAM-UMR CNRS 6230; Université de Nantes; 2 rue de la Houssinière 44322 Nantes France
| | - Christine Labrugère
- PLACAMAT-UMS 3626; CNRS-Université de Bordeaux; 87 avenue Albert Schweitzer 33608 Pessac France
| | - Lénaïc Lartigue
- CEISAM-UMR CNRS 6230; Université de Nantes; 2 rue de la Houssinière 44322 Nantes France
| | - Jean-Luc Duvail
- IMN-UMR CNRS 6502; Université de Nantes; 44322 Nantes France
| | - Eléna Ishow
- CEISAM-UMR CNRS 6230; Université de Nantes; 2 rue de la Houssinière 44322 Nantes France
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21
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Heitzer HM, Marks TJ, Ratner MA. Computation of Dielectric Response in Molecular Solids for High Capacitance Organic Dielectrics. Acc Chem Res 2016; 49:1614-23. [PMID: 27576058 DOI: 10.1021/acs.accounts.6b00173] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/28/2023]
Abstract
The dielectric response of a material is central to numerous processes spanning the fields of chemistry, materials science, biology, and physics. Despite this broad importance across these disciplines, describing the dielectric environment of a molecular system at the level of first-principles theory and computation remains a great challenge and is of importance to understand the behavior of existing systems as well as to guide the design and synthetic realization of new ones. Furthermore, with recent advances in molecular electronics, nanotechnology, and molecular biology, it has become necessary to predict the dielectric properties of molecular systems that are often difficult or impossible to measure experimentally. In these scenarios, it is would be highly desirable to be able to determine dielectric response through efficient, accurate, and chemically informative calculations. A good example of where theoretical modeling of dielectric response would be valuable is in the development of high-capacitance organic gate dielectrics for unconventional electronics such as those that could be fabricated by high-throughput printing techniques. Gate dielectrics are fundamental components of all transistor-based logic circuitry, and the combination high dielectric constant and nanoscopic thickness (i.e., high capacitance) is essential to achieving high switching speeds and low power consumption. Molecule-based dielectrics offer the promise of cheap, flexible, and mass producible electronics when used in conjunction with unconventional organic or inorganic semiconducting materials to fabricate organic field effect transistors (OFETs). The molecular dielectrics developed to date typically have limited dielectric response, which results in low capacitances, translating into poor performance of the resulting OFETs. Furthermore, the development of better performing dielectric materials has been hindered by the current highly empirical and labor-intensive pace of synthetic progress. An accurate and efficient theoretical computational approach could drastically decrease this time by screening potential dielectric materials and providing reliable design rules for future molecular dielectrics. Until recently, accurate calculation of dielectric responses in molecular materials was difficult and highly approximate. Most previous modeling efforts relied on classical formalisms to relate molecular polarizability to macroscopic dielectric properties. These efforts often vastly overestimated polarizability in the subject materials and ignored crucial material properties that can affect dielectric response. Recent advances in first-principles calculations via density functional theory (DFT) with periodic boundary conditions have allowed accurate computation of dielectric properties in molecular materials. In this Account, we outline the methodology used to calculate dielectric properties of molecular materials. We demonstrate the validity of this approach on model systems, capturing the frequency dependence of the dielectric response and achieving quantitative accuracy compared with experiment. This method is then used as a guide to new high-capacitance molecular dielectrics by determining what materials and chemical properties are important in maximizing dielectric response in self-assembled monolayers (SAMs). It will be seen that this technique is a powerful tool for understanding and designing new molecular dielectric systems, the properties of which are fundamental to many scientific areas.
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Affiliation(s)
- Henry M. Heitzer
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Tobin J. Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Mark A. Ratner
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
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22
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Banger K, Warwick C, Lang J, Broch K, Halpert JE, Socratous J, Brown A, Leedham T, Sirringhaus H. Identification of dipole disorder in low temperature solution processed oxides: its utility and suppression for transparent high performance solution-processed hybrid electronics. Chem Sci 2016; 7:6337-6346. [PMID: 28567246 PMCID: PMC5450438 DOI: 10.1039/c6sc01962e] [Citation(s) in RCA: 35] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/04/2016] [Accepted: 07/01/2016] [Indexed: 01/05/2023] Open
Abstract
Identification of long-lived dipole disorder in low-temp solution processed dielectrics, and it's suppression.
The ability to deposit high-quality inorganic semiconductors and dielectrics from solution at low process temperatures (∼200 °C) has become a very important research focus. During the course of our investigation, we identify the presence of an induced dipole present in solid state solution processed inorganic oxide insulator layers processed at reduced temperature (200–350 °C) from either molecular precursors, or well-dispersed metal oxide nanoparticles. Chemical composition analysis coupled with electrical measurements shows that the dielectric instability occurs due to proton migration via the Grotthuss mechanism inducing a long lived dipole disorder. Thus we established conditions for suppressing this effect to afford “ideal” high-k dielectric layer. Using this methodology, solution processed all inorganic thin film transistors (TFTs) with charge carrier mobilities exceeding 6 cm2 V–1 s–1 operating at low voltage (5 V) have been achieved. In addition, we show the broad utility of the perovskite high-k dielectric when processed with state of the art polymer and single crystal organic semiconductors yielding mobilities of approx. 7 cm2 V–1 s–1 at only 4 V. These transparent devices demonstrate excellent electrical device stability and a threshold voltage shift of only 0.41 V over 14 h, which is comparable, or better than sputtered oxide films.
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Affiliation(s)
- Kulbinder Banger
- Optoelectronics Group , Cavendish Laboratory , JJ Thomson Avenue , Cambridge CB3 0HE , UK . ;
| | - Christopher Warwick
- Optoelectronics Group , Cavendish Laboratory , JJ Thomson Avenue , Cambridge CB3 0HE , UK . ;
| | - Jiang Lang
- Optoelectronics Group , Cavendish Laboratory , JJ Thomson Avenue , Cambridge CB3 0HE , UK . ;
| | - Katharina Broch
- Optoelectronics Group , Cavendish Laboratory , JJ Thomson Avenue , Cambridge CB3 0HE , UK . ;
| | - Jonathan E Halpert
- Optoelectronics Group , Cavendish Laboratory , JJ Thomson Avenue , Cambridge CB3 0HE , UK . ;
| | - Josephine Socratous
- Optoelectronics Group , Cavendish Laboratory , JJ Thomson Avenue , Cambridge CB3 0HE , UK . ;
| | - Adam Brown
- Optoelectronics Group , Cavendish Laboratory , JJ Thomson Avenue , Cambridge CB3 0HE , UK . ;
| | | | - Henning Sirringhaus
- Optoelectronics Group , Cavendish Laboratory , JJ Thomson Avenue , Cambridge CB3 0HE , UK . ;
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23
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Arnold HN, Cress CD, McMorrow JJ, Schmucker SW, Sangwan VK, Jaber-Ansari L, Kumar R, Puntambekar KP, Luck KA, Marks TJ, Hersam MC. Tunable Radiation Response in Hybrid Organic-Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics. ACS APPLIED MATERIALS & INTERFACES 2016; 8:5058-5064. [PMID: 26882215 DOI: 10.1021/acsami.5b12259] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Solution-processed semiconductor and dielectric materials are attractive for future lightweight, low-voltage, flexible electronics, but their response to ionizing radiation environments is not well understood. Here, we investigate the radiation response of graphene field-effect transistors employing multilayer, solution-processed zirconia self-assembled nanodielectrics (Zr-SANDs) with ZrOx as a control. Total ionizing dose (TID) testing is carried out in situ using a vacuum ultraviolet source to a total radiant exposure (RE) of 23.1 μJ/cm(2). The data reveal competing charge density accumulation within and between the individual dielectric layers. Additional measurements of a modified Zr-SAND show that varying individual layer thicknesses within the gate dielectric tuned the TID response. This study thus establishes that the radiation response of graphene electronics can be tailored to achieve a desired radiation sensitivity by incorporating hybrid organic-inorganic gate dielectrics.
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Affiliation(s)
| | - Cory D Cress
- Electronics Science & Technology Division, U.S. Naval Research Laboratory , Washington, D.C. 20375, United States
| | | | - Scott W Schmucker
- Electronics Science & Technology Division, U.S. Naval Research Laboratory , Washington, D.C. 20375, United States
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24
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Zhu J, Liu X, Geier ML, McMorrow JJ, Jariwala D, Beck ME, Huang W, Marks TJ, Hersam MC. Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:63-68. [PMID: 26514248 DOI: 10.1002/adma.201504501] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2015] [Revised: 10/04/2015] [Indexed: 06/05/2023]
Abstract
Layer-by-layer assembled 2D montmorillonite nanosheets are shown to be high-performance, solution-processed dielectrics. These scalable and spatially uniform sub-10 nm thick dielectrics yield high areal capacitances of ≈600 nF cm(-2) and low leakage currents down to 6 × 10(-9) A cm(-2) that enable low voltage operation of p-type semiconducting single-walled carbon nanotube and n-type indium gallium zinc oxide field-effect transistors.
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Affiliation(s)
- Jian Zhu
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Xiaolong Liu
- Graduate Program in Applied Physics, Northwestern University, Evanston, IL, 60208, USA
| | - Michael L Geier
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Julian J McMorrow
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Deep Jariwala
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Megan E Beck
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Wei Huang
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
| | - Tobin J Marks
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
- Graduate Program in Applied Physics, Northwestern University, Evanston, IL, 60208, USA
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
- Graduate Program in Applied Physics, Northwestern University, Evanston, IL, 60208, USA
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
- Department of Medicine, Northwestern University, Evanston, IL, 60208, USA
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25
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Nagashima T, Ozawa H, Suzuki T, Nakabayashi T, Kanaizuka K, Haga MA. Photoresponsive Molecular Memory Films Composed of Sequentially Assembled Heterolayers Containing Ruthenium Complexes. Chemistry 2015; 22:1658-67. [DOI: 10.1002/chem.201503591] [Citation(s) in RCA: 30] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2015] [Indexed: 11/10/2022]
Affiliation(s)
- Takumi Nagashima
- Department of Applied Chemistry; Faculty of Science and Engineering; Chuo University; 1-13-27 Kasuga Bunkyo-ku Tokyo 112-8551 Japan
| | - Hiroaki Ozawa
- Department of Applied Chemistry; Faculty of Science and Engineering; Chuo University; 1-13-27 Kasuga Bunkyo-ku Tokyo 112-8551 Japan
| | - Takashi Suzuki
- Department of Applied Chemistry; Faculty of Science and Engineering; Chuo University; 1-13-27 Kasuga Bunkyo-ku Tokyo 112-8551 Japan
| | - Takuya Nakabayashi
- Department of Applied Chemistry; Faculty of Science and Engineering; Chuo University; 1-13-27 Kasuga Bunkyo-ku Tokyo 112-8551 Japan
| | - Katsuhiko Kanaizuka
- Department of Chemistry; Faculty of Science; Yamagata University; 1-4-12 Kojirakawa-machi Yamagata 990-8560 Japan
| | - Masa-aki Haga
- Department of Applied Chemistry; Faculty of Science and Engineering; Chuo University; 1-13-27 Kasuga Bunkyo-ku Tokyo 112-8551 Japan
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26
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Bassanetti I, Mattarozzi M, Delferro M, Marks TJ, Marchiò L. Silver(I) Bis(pyrazolyl)methane Complexes and Their Implementation as Precursors for Metallic Silver Deposition. Eur J Inorg Chem 2015. [DOI: 10.1002/ejic.201501236] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Irene Bassanetti
- Dipartimento di ChimicaUniversità degli Studi di ParmaParco Area delle Scienze 17/a43124ParmaItaly
- Department of ChemistryNorthwestern University2145 Sheridan Road60208EvanstonIllinoisUSA
| | - Monica Mattarozzi
- Dipartimento di ChimicaUniversità degli Studi di ParmaParco Area delle Scienze 17/a43124ParmaItaly
| | - Massimiliano Delferro
- Department of ChemistryNorthwestern University2145 Sheridan Road60208EvanstonIllinoisUSA
| | - Tobin J. Marks
- Department of ChemistryNorthwestern University2145 Sheridan Road60208EvanstonIllinoisUSA
| | - Luciano Marchiò
- Dipartimento di ChimicaUniversità degli Studi di ParmaParco Area delle Scienze 17/a43124ParmaItaly
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27
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McMorrow JJ, Walker AR, Sangwan VK, Jariwala D, Hoffman E, Everaerts K, Facchetti A, Hersam MC, Marks TJ. Solution-Processed Self-Assembled Nanodielectrics on Template-Stripped Metal Substrates. ACS APPLIED MATERIALS & INTERFACES 2015; 7:26360-26366. [PMID: 26479833 DOI: 10.1021/acsami.5b07744] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The coupling of hybrid organic-inorganic gate dielectrics with emergent unconventional semiconductors has yielded transistor devices exhibiting record-setting transport properties. However, extensive electronic transport measurements on these high-capacitance systems are often convoluted with the electronic response of the semiconducting silicon substrate. In this report, we demonstrate the growth of solution-processed zirconia self-assembled nanodielectrics (Zr-SAND) on template-stripped aluminum substrates. The resulting Zr-SAND on Al structures leverage the ultrasmooth (r.m.s. roughness <0.4 nm), chemically uniform nature of template-stripped metal substrates to demonstrate the same exceptional electronic uniformity (capacitance ∼700 nF cm(-2), leakage current <1 μA cm(-2) at -2 MV cm(-1)) and multilayer growth of Zr-SAND on Si, while exhibiting superior temperature and voltage capacitance responses. These results are important to conduct detailed transport measurements in emergent transistor technologies featuring SAND as well as for future applications in integrated circuits or flexible electronics.
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Affiliation(s)
| | | | | | | | | | | | - Antonio Facchetti
- Polyera Corporation , 8045 Lamon Avenue, Skokie, Illinois 60077, United States
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28
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Siraj N, El-Zahab B, Hamdan S, Karam TE, Haber LH, Li M, Fakayode SO, Das S, Valle B, Strongin RM, Patonay G, Sintim HO, Baker GA, Powe A, Lowry M, Karolin JO, Geddes CD, Warner IM. Fluorescence, Phosphorescence, and Chemiluminescence. Anal Chem 2015; 88:170-202. [PMID: 26575092 DOI: 10.1021/acs.analchem.5b04109] [Citation(s) in RCA: 80] [Impact Index Per Article: 8.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
Affiliation(s)
- Noureen Siraj
- Department of Chemistry, Louisiana State University , Baton Rouge, Louisiana 70803, United States
| | - Bilal El-Zahab
- Department of Mechanical and Materials Engineering, Florida International University , Miami, Florida 33174, United States
| | - Suzana Hamdan
- Department of Chemistry, Louisiana State University , Baton Rouge, Louisiana 70803, United States
| | - Tony E Karam
- Department of Chemistry, Louisiana State University , Baton Rouge, Louisiana 70803, United States
| | - Louis H Haber
- Department of Chemistry, Louisiana State University , Baton Rouge, Louisiana 70803, United States
| | - Min Li
- Process Development Center, Albemarle Corporation , Baton Rouge, Louisiana 70805, United States
| | - Sayo O Fakayode
- Department of Chemistry, Winston-Salem State University , Winston-Salem, North Carolina 27110, United States
| | - Susmita Das
- Department of Civil Engineering, Adamas Institute of Technology , Barasat, Kolkata 700126, West Bengal India
| | - Bertha Valle
- Department of Chemistry, Texas Southern University , Houston, Texas 77004, United States
| | - Robert M Strongin
- Department of Chemistry, Portland State University , Portland, Oregon 97207, United States
| | - Gabor Patonay
- Department of Chemistry, Georgia State University , Atlanta, Georgia 30302-4098, United States
| | - Herman O Sintim
- Department of Chemistry and Biochemistry, University of Maryland , College Park, Maryland 20742, United States
| | - Gary A Baker
- Department of Chemistry, University of Missouri Columbia , Columbia, Missouri 65211-7600, United States
| | - Aleeta Powe
- Department of Chemistry, University of Louisville , Louisville, Kentucky 40208, United States
| | - Mark Lowry
- Department of Chemistry, Portland State University , Portland, Oregon 97207, United States
| | - Jan O Karolin
- Institute of Fluorescence, University of Maryland Baltimore County , Baltimore, Maryland 21202, United States
| | - Chris D Geddes
- Institute of Fluorescence, University of Maryland Baltimore County , Baltimore, Maryland 21202, United States
| | - Isiah M Warner
- Department of Chemistry, Louisiana State University , Baton Rouge, Louisiana 70803, United States
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29
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Zhu J, Kang J, Kang J, Jariwala D, Wood JD, Seo JWT, Chen KS, Marks TJ, Hersam MC. Solution-Processed Dielectrics Based on Thickness-Sorted Two-Dimensional Hexagonal Boron Nitride Nanosheets. NANO LETTERS 2015; 15:7029-7036. [PMID: 26348822 DOI: 10.1021/acs.nanolett.5b03075] [Citation(s) in RCA: 51] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Gate dielectrics directly affect the mobility, hysteresis, power consumption, and other critical device metrics in high-performance nanoelectronics. With atomically flat and dangling bond-free surfaces, hexagonal boron nitride (h-BN) has emerged as an ideal dielectric for graphene and related two-dimensional semiconductors. While high-quality, atomically thin h-BN has been realized via micromechanical cleavage and chemical vapor deposition, existing liquid exfoliation methods lack sufficient control over h-BN thickness and large-area film quality, thus limiting its use in solution-processed electronics. Here, we employ isopycnic density gradient ultracentrifugation for the preparation of monodisperse, thickness-sorted h-BN inks, which are subsequently layer-by-layer assembled into ultrathin dielectrics with low leakage currents of 3 × 10(-9) A/cm(2) at 2 MV/cm and high capacitances of 245 nF/cm(2). The resulting solution-processed h-BN dielectric films enable the fabrication of graphene field-effect transistors with negligible hysteresis and high mobilities up to 7100 cm(2) V(-1) s(-1) at room temperature. These h-BN inks can also be used as coatings on conventional dielectrics to minimize the effects of underlying traps, resulting in improvements in overall device performance. Overall, this approach for producing and assembling h-BN dielectric inks holds significant promise for translating the superlative performance of two-dimensional heterostructure devices to large-area, solution-processed nanoelectronics.
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Affiliation(s)
- Jian Zhu
- Department of Materials Science and Engineering, ‡Graduate Program in Applied Physics, §Department of Chemistry, and ∥Department of Medicine, Northwestern University , Evanston, Illinois 60208, United States
| | - Joohoon Kang
- Department of Materials Science and Engineering, ‡Graduate Program in Applied Physics, §Department of Chemistry, and ∥Department of Medicine, Northwestern University , Evanston, Illinois 60208, United States
| | - Junmo Kang
- Department of Materials Science and Engineering, ‡Graduate Program in Applied Physics, §Department of Chemistry, and ∥Department of Medicine, Northwestern University , Evanston, Illinois 60208, United States
| | - Deep Jariwala
- Department of Materials Science and Engineering, ‡Graduate Program in Applied Physics, §Department of Chemistry, and ∥Department of Medicine, Northwestern University , Evanston, Illinois 60208, United States
| | - Joshua D Wood
- Department of Materials Science and Engineering, ‡Graduate Program in Applied Physics, §Department of Chemistry, and ∥Department of Medicine, Northwestern University , Evanston, Illinois 60208, United States
| | - Jung-Woo T Seo
- Department of Materials Science and Engineering, ‡Graduate Program in Applied Physics, §Department of Chemistry, and ∥Department of Medicine, Northwestern University , Evanston, Illinois 60208, United States
| | - Kan-Sheng Chen
- Department of Materials Science and Engineering, ‡Graduate Program in Applied Physics, §Department of Chemistry, and ∥Department of Medicine, Northwestern University , Evanston, Illinois 60208, United States
| | - Tobin J Marks
- Department of Materials Science and Engineering, ‡Graduate Program in Applied Physics, §Department of Chemistry, and ∥Department of Medicine, Northwestern University , Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, ‡Graduate Program in Applied Physics, §Department of Chemistry, and ∥Department of Medicine, Northwestern University , Evanston, Illinois 60208, United States
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30
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Heitzer HM, Marks TJ, Ratner MA. Molecular Donor–Bridge–Acceptor Strategies for High-Capacitance Organic Dielectric Materials. J Am Chem Soc 2015; 137:7189-96. [DOI: 10.1021/jacs.5b03301] [Citation(s) in RCA: 33] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2023]
Affiliation(s)
- Henry M. Heitzer
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Tobin J. Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Mark A. Ratner
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
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31
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Jones AOF, Knauer P, Resel R, Ringk A, Strohriegl P, Werzer O, Sferrazza M. Thermal Stability and Molecular Ordering of Organic Semiconductor Monolayers: Effect of an Anchor Group. Chemphyschem 2015; 16:1712-8. [DOI: 10.1002/cphc.201500098] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/05/2015] [Indexed: 12/22/2022]
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32
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Malytskyi V, Simon JJ, Patrone L, Raimundo JM. Synthesis, self-assembly and characterization of a novel push–pull thiophene-based chromophore on a gold surface. RSC Adv 2015. [DOI: 10.1039/c5ra02200b] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
A self-assembled dense monolayer based on a non-charged push–pull chromophore is clearly evidenced by electrochemical, XPS and STM analysis. Associated with good film properties a conducting behavior consistent with the structure of the SAM-organized push–pull is also shown.
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Affiliation(s)
- Volodymyr Malytskyi
- Centre Interdisciplinaire de Nanoscience de Marseille
- Aix-Marseille Université
- CNRS
- CINaM UMR 7325
- 13288 Marseille Cedex 09
| | - Jean-Jacques Simon
- Institut Matériaux Microélectronique Nanosciences de Provence
- Aix-Marseille Université
- CNRS
- Université de Toulon
- IM2NP UMR 7334
| | - Lionel Patrone
- Institut Matériaux Microélectronique Nanosciences de Provence
- Aix-Marseille Université
- CNRS
- Université de Toulon
- IM2NP UMR 7334
| | - Jean-Manuel Raimundo
- Centre Interdisciplinaire de Nanoscience de Marseille
- Aix-Marseille Université
- CNRS
- CINaM UMR 7325
- 13288 Marseille Cedex 09
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33
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Heitzer HM, Marks TJ, Ratner MA. Maximizing the dielectric response of molecular thin films via quantum chemical design. ACS NANO 2014; 8:12587-12600. [PMID: 25415650 DOI: 10.1021/nn505431p] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Developing high-capacitance organic gate dielectrics is critical for advances in electronic circuitry based on unconventional semiconductors. While high-dielectric constant molecular substances are known, the mechanism of dielectric response and the fundamental chemical design principles are not well understood. Using a plane-wave density functional theory formalism, we show that it is possible to map the atomic-scale dielectric profiles of molecule-based materials while capturing important bulk characteristics. For molecular films, this approach reveals how basic materials properties such as surface coverage density, molecular tilt angle, and π-system planarity can dramatically influence dielectric response. Additionally, relatively modest molecular backbone and substituent variations can be employed to substantially enhance film dielectric response. For dense surface coverages and proper molecular alignment, conjugated hydrocarbon chains can achieve dielectric constants of >8.0, more than 3 times that of analogous saturated chains, ∼2.5. However, this conjugation-related dielectric enhancement depends on proper molecular orientation and planarization, with enhancements up to 60% for proper molecular alignment with the applied field and an additional 30% for conformations such as coplanarity in extended π-systems. Conjugation length is not the only determinant of dielectric response, and appended polarizable high-Z substituents can increase molecular film response more than 2-fold, affording estimated capacitances of >9.0 μF/cm2. However, in large π-systems, polar substituent effects are substantially attenuated.
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Affiliation(s)
- Henry M Heitzer
- Department of Chemistry and the Materials Research Center, Northwestern University , 2145 Sheridan Road, Evanston, Illinois 60208, United States
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34
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Liu D, He Z, Su Y, Diao Y, Mannsfeld SCB, Bao Z, Xu J, Miao Q. Self-assembled monolayers of cyclohexyl-terminated phosphonic acids as a general dielectric surface for high-performance organic thin-film transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2014; 26:7190-7196. [PMID: 25205623 DOI: 10.1002/adma.201402822] [Citation(s) in RCA: 52] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/25/2014] [Revised: 08/04/2014] [Indexed: 06/03/2023]
Abstract
A novel self-assembled monolayer (SAM) on AlOy /TiOx is terminated with cyclohexyl groups, an unprecedented terminal group for all kinds of SAMs. The SAM-modified AlOy /TiOx functions as a general dielectric, enabling organic thin-film transistors with a field-effect mobility higher than 5 cm(2) V(-1) s(-1) for both holes and electrons, good air stability with low operating voltage, and general applicability to solution-processed and vacuum-deposited n-type and p-type organic semiconductors.
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Affiliation(s)
- Danqing Liu
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
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35
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Bhairamadgi NS, Pujari SP, Trovela FG, Debrassi A, Khamis AA, Alonso JM, Al Zahrani AA, Wennekes T, Al-Turaif HA, van Rijn C, Alhamed YA, Zuilhof H. Hydrolytic and thermal stability of organic monolayers on various inorganic substrates. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2014; 30:5829-5839. [PMID: 24825533 DOI: 10.1021/la500533f] [Citation(s) in RCA: 50] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
A comparative study is presented of the hydrolytic and thermal stability of 24 different kinds of monolayers on Si(111), Si(100), SiC, SiN, SiO2, CrN, ITO, PAO, Au, and stainless steel surfaces. These surfaces were modified utilizing appropriate organic compounds having a constant alkyl chain length (C18), but with different surface-reactive groups, such as 1-octadecene, 1-octadecyne, 1-octadecyltrichlorosilane, 1-octadecanethiol, 1-octadecylamine and 1-octadecylphosphonic acid. The hydrolytic stability of obtained monolayers was systematically investigated in triplicate in constantly flowing aqueous media at room temperature in acidic (pH 3), basic (pH 11), phosphate buffer saline (PBS) and deionized water (neutral conditions), for a period of 1 day, 7 days, and 30 days, yielding 1152 data points for the hydrolytic stability. The hydrolytic stability was monitored by static contact angle measurements and X-ray photoelectron spectroscopy (XPS). The covalently bound alkyne monolayers on Si(111), Si(100), and SiC were shown to be among the most stable monolayers under acidic and neutral conditions. Additionally, the thermal stability of 14 different monolayers was studied in vacuum using XPS at elevated temperatures (25-600 °C). Similar to the hydrolytic stability, the covalently bound both alkyne and alkene monolayers on Si(111), Si(100) and SiC started to degrade from temperatures above 260 °C, whereas on oxide surfaces (e.g., PAO) phosphonate monolayers even displayed thermal stability up to ∼500 °C.
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Affiliation(s)
- Nagendra S Bhairamadgi
- Laboratory of Organic Chemistry, Wageningen University and Research Center , Dreijenplein 8, 6703 HB Wageningen, The Netherlands
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36
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Ha YG, Everaerts K, Hersam MC, Marks TJ. Hybrid gate dielectric materials for unconventional electronic circuitry. Acc Chem Res 2014; 47:1019-28. [PMID: 24428627 DOI: 10.1021/ar4002262] [Citation(s) in RCA: 94] [Impact Index Per Article: 9.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023]
Abstract
Recent advances in semiconductor performance made possible by organic π-electron molecules, carbon-based nanomaterials, and metal oxides have been a central scientific and technological research focus over the past decade in the quest for flexible and transparent electronic products. However, advances in semiconductor materials require corresponding advances in compatible gate dielectric materials, which must exhibit excellent electrical properties such as large capacitance, high breakdown strength, low leakage current density, and mechanical flexibility on arbitrary substrates. Historically, conventional silicon dioxide (SiO2) has dominated electronics as the preferred gate dielectric material in complementary metal oxide semiconductor (CMOS) integrated transistor circuitry. However, it does not satisfy many of the performance requirements for the aforementioned semiconductors due to its relatively low dielectric constant and intransigent processability. High-k inorganics such as hafnium dioxide (HfO2) or zirconium dioxide (ZrO2) offer some increases in performance, but scientists have great difficulty depositing these materials as smooth films at temperatures compatible with flexible plastic substrates. While various organic polymers are accessible via chemical synthesis and readily form films from solution, they typically exhibit low capacitances, and the corresponding transistors operate at unacceptably high voltages. More recently, researchers have combined the favorable properties of high-k metal oxides and π-electron organics to form processable, structurally well-defined, and robust self-assembled multilayer nanodielectrics, which enable high-performance transistors with a wide variety of unconventional semiconductors. In this Account, we review recent advances in organic-inorganic hybrid gate dielectrics, fabricated by multilayer self-assembly, and their remarkable synergy with unconventional semiconductors. We first discuss the principals and functional importance of gate dielectric materials in thin-film transistor (TFT) operation. Next, we describe the design, fabrication, properties, and applications of solution-deposited multilayer organic-inorganic hybrid gate dielectrics, using self-assembly techniques, which provide bonding between the organic and inorganic layers. Finally, we discuss approaches for preparing analogous hybrid multilayers by vapor-phase growth and discuss the properties of these materials.
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Affiliation(s)
- Young-Geun Ha
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- Department of Chemistry, Kyonggi University, Suwon, Gyeonggi-Do 443-760, Republic of Korea
| | - Ken Everaerts
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Mark C. Hersam
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, United States
| | - Tobin J. Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, United States
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Jariwala D, Sangwan VK, Lauhon LJ, Marks TJ, Hersam MC. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. ACS NANO 2014; 8:1102-20. [PMID: 24476095 DOI: 10.1021/nn500064s] [Citation(s) in RCA: 980] [Impact Index Per Article: 98.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/14/2023]
Abstract
With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Toward that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.
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Affiliation(s)
- Deep Jariwala
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Medicine, Northwestern University , Evanston, Illinois 60208, United States
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38
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Everaerts K, Zeng L, Hennek JW, Camacho DI, Jariwala D, Bedzyk MJ, Hersam MC, Marks TJ. Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility. ACS APPLIED MATERIALS & INTERFACES 2013; 5:11884-11893. [PMID: 24187917 DOI: 10.1021/am403585n] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Solution-processed amorphous oxide semiconductors (AOSs) are emerging as important electronic materials for displays and transparent electronics. We report here on the fabrication, microstructure, and performance characteristics of inkjet-printed, low-temperature combustion-processed, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) grown on solution-processed hafnia self-assembled nanodielectrics (Hf-SANDs). TFT performance for devices processed below 300 °C includes >4× enhancement in electron mobility (μFE) on Hf-SAND versus SiO2 or ALD-HfO2 gate dielectrics, while other metrics such as subthreshold swing (SS), current on:off ratio (ION:IOFF), threshold voltage (Vth), and gate leakage current (Ig) are unchanged or enhanced. Thus, low voltage IGZO/SAND TFT operation (<2 V) is possible with ION:IOFF = 10(7), SS = 125 mV/dec, near-zero Vth, and large electron mobility, μFE(avg) = 20.6 ± 4.3 cm(2) V(-1) s(-1), μFE(max) = 50 cm(2) V(-1) s(-1). Furthermore, X-ray diffraction analysis indicates that the 300 °C IGZO combustion processing leaves the underlying Hf-SAND microstructure and capacitance intact. This work establishes the compatibility and advantages of all-solution, low-temperature fabrication of inkjet-printed, combustion-derived high-mobility IGZO TFTs integrated with self-assembled hybrid organic-inorganic nanodielectrics.
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Affiliation(s)
- Ken Everaerts
- Department of Chemistry, ‡Department of Materials Science and Engineering, §Department of Medicine, ⊥Department of Physics and Astronomy, and #Graduate Program in Applied Physics, Northwestern University , Evanston, Illinois 60208, United States
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