Chemical Vapor Deposition of TiN from Tetrakis(dimethylamido)titanium and Ammonia: Kinetics and Mechanistic Studies of the Gas-Phase Chemistry

Divalent Titanium via Reductive N-C Coupling of a TiIV Nitrido with π-Acids

The nitrido-ate complex [(PN)2Ti(N){μ2-K(OEt2)}]2 (1) (PN-=(N-(2-PiPr2-4-methylphenyl)-2,4,6-Me3C6H2) reductively couples CO and isocyanides in the presence of DME or cryptand (Kryptofix222), to form rare, five-coordinate TiII complexes having a linear cumulene motif, [K(L)][(PN)2Ti(NCE)] (E=O, L=Kryptofix222, (2); E=NAd, L=3 DME, (3); E=NtBu, L=3 DME, (4); E=NAd, L=Kryptofix222, (5)). Oxidation of 2-5 with [Fc][OTf] afforded an isostructural TiIII center containing a neutral cumulene, [(PN)2Ti(NCE)] (E=O, (6); E=NAd (7), NtBu (8)) and characterization by CW X-band EPR spectroscopy, revealed unpaired electron to be metal centric. Moreover, 1e- reduction of 6 and 7 in the presence of Kryptofix222cleanly reformed corresponding discrete TiII complexes 2 and 5, which were further characterized by solution magnetization measurements and high-frequency and -field EPR (HFEPR) spectroscopy. Furthermore, oxidation of 7 with [Fc*][B(C6F5)4] resulted in a ligand disproportionated TiIV complex having transoid carbodiimides, [(PN)2Ti(NCNAd)2] (9). Comparison of spectroscopic, structural, and computational data for the divalent, trivalent, and tetravalent systems, including their 15N enriched isotopomers demonstrate these cumulenes to decrease in order of backbonding as TiII→TiIII→TiIV and increasing order of π-donation as TiII→TiIII→TiIV, thus displaying more covalency in TiIII species. Lastly, we show a synthetic cycle whereby complex 1 can deliver an N-atom to CO and CNAd.

Nondispersive Infrared Gas Analyzer for Partial Pressure Measurements of a Tantalum Alkylamide During Vapor Deposition Processes

A nondispersive infrared gas analyzer was demonstrated for investigating metal alkylamide precursor delivery for microelectronics vapor deposition processes. The nondispersive infrared analyzer was designed to simultaneously measure the partial pressure of pentakis(dimethylamido) tantalum, a metal precursor employed in high volume manufacturing vapor deposition processes to deposit tantalum nitride, and dimethylamine, the primary decomposition product of pentakis(dimethylamido) tantalum at typical delivery conditions for these applications. This sensor was based on direct absorption of pentakis(dimethylamido) tantalum and dimethylamine in the fingerprint spectral region. The nondispersive infrared analyzer optical response was calibrated by measuring absorbance as a function of dimethylamine and pentakis(dimethylamido) tantalum density. The difference between the mass of material removed from the ampoule during flow tests as measured gravimetrically and as determined optically, by calculating flow rates from the nondispersive infrared analyzer measurements, was only ≈2 %. The minimum detectable molecular densities for pentakis(dimethylamido) tantalum and dimethylamine were ≈2 × 10¹³ cm^-3 and ≈5 × 10¹⁴ cm^-3, respectively (with no signal averaging and for a sampling rate of 200 Hz), and the corresponding partial pressures were ≈0.1 Pa and ≈2 Pa for pentakis(dimethylamido) tantalum and dimethylamine, respectively (for an optical flow cell temperature of 93 ℃). Pentakis(dimethylamido) tantalum could be detected at all conditions of this investigation and likely the majority of conditions relevant to high volume manufacturing tantalum nitride deposition. Dimethylamine was not detected at all conditions in this study, because of a lower nondispersive infrared analyzer sensitivity to dimethylamine compared to pentakis(dimethylamido) tantalum and because conditions of this study were selected to minimize DMA production. While this nondispersive infrared gas analyzer was specifically developed for pentakis(dimethylamido) tantalum and dimethylamine, it is suitable for characterizing the vapor delivery of other metal alkylamide precursors and the corresponding amine decomposition products, although in the case of some metal alkylamides a different bandpass filter would be required.

Atomic Layer Deposition (ALD) of Metal Gates for CMOS

The continuous down-scaling of complementary metal oxide semiconductor (CMOS) field effect transistors (FETs) had been suffering two fateful technical issues, one relative to the thinning of gate dielectric and the other to the aggressive shortening of channel in last 20 years. To solve the first issue, the high-κ dielectric and metal gate technology had been induced to replace the conventional gate stack of silicon dioxide layer and poly-silicon. To suppress the short channel effects, device architecture had changed from planar bulk Si device to fully depleted silicon on insulator (FDSOI) and FinFETs, and will transit to gate all-around FETs (GAA-FETs). Different from the planar devices, the FinFETs and GAA-FETs have a 3D channel. The conventional high-κ/metal gate process using sputtering faces conformality difficulty, and all atomic layer deposition (ALD) of gate stack become necessary. This review covers both scientific and technological parts related to the ALD of metal gates including the concept of effect work function, the material selection, the precursors for the deposition, the threshold voltage (Vt) tuning of the metal gate in contact with HfO2/SiO2/Si. The ALD of n-type metal gate will be detailed systematically, based mainly on the authors’ works in last five years, and the all ALD gate stacks will be proposed for the future generations based on the learning.

Molecular titanium nitrides: nucleophiles unleashed

In this contribution we present reactivity studies of a rare example of a titanium salt, in the form of [μ2-K(OEt2)]2[(PN)2Ti[triple bond, length as m-dash]N]2 (1) (PN- = N-(2-(diisopropylphosphino)-4-methylphenyl)-2,4,6-trimethylanilide) to produce a series of imide moieties including rare examples such as methylimido, borylimido, phosphonylimido, and a parent imido. For the latter, using various weak acids allowed us to narrow the pK a range of the NH group in (PN)2Ti[triple bond, length as m-dash]NH to be between 26-36. Complex 1 could be produced by a reductively promoted elimination of N2 from the azide precursor (PN)2TiN3, whereas reductive splitting of N2 could not be achieved using the complex (PN)2Ti[double bond, length as m-dash]N[double bond, length as m-dash]N[double bond, length as m-dash]Ti(PN)2 (2) and a strong reductant. Complete N-atom transfer reactions could also be observed when 1 was treated with ClC(O)tBu and OCCPh2 to form NCtBu and KNCCPh2, respectively, along with the terminal oxo complex (PN)2Ti[triple bond, length as m-dash]O, which was also characterized. A combination of solid state 15N NMR (MAS) and theoretical studies allowed us to understand the shielding effect of the counter cation in dimer 1, the monomer [K(18-crown-6)][(PN)2Ti[triple bond, length as m-dash]N], and the discrete salt [K(2,2,2-Kryptofix)][(PN)2Ti[triple bond, length as m-dash]N] as well as the origin of the highly downfield 15N NMR resonance when shifting from dimer to monomer to a terminal nitride (discrete salt). The upfield shift of 15Nnitride resonance in the 15N NMR spectrum was found to be linked to the K+ induced electronic structural change of the titanium-nitride functionality by using a combination of MO analysis and quantum chemical analysis of the corresponding shielding tensors.

Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys

(Si)GeSn is an emerging group IV alloy system offering new exciting properties, with great potential for low power electronics due to the fundamental direct band gap and prospects as high mobility material. In this Article, we present a systematic study of HfO2/TaN high-k/metal gate stacks on (Si)GeSn ternary alloys and low temperature processes for large scale integration of Sn based alloys. Our investigations indicate that SiGeSn ternaries show enhanced thermal stability compared to GeSn binaries, allowing the use of the existing Si technology. Despite the multielemental interface and large Sn content of up to 14 atom %, the HfO2/(Si)GeSn capacitors show small frequency dispersion and stretch-out. The formed TaN/HfO2/(Si)GeSn capacitors present a low leakage current of 2 × 10(-8) A/cm(2) at -1 V and a high breakdown field of ∼8 MV/cm. For large Sn content SiGeSn/GeSn direct band gap heterostructures, process temperatures below 350 °C are required for integration. We developed an atomic vapor deposition process for TaN metal gate on HfO2 high-k dielectric and validated it by resistivity as well as temperature and frequency dependent capacitance-voltage measurements of capacitors on SiGeSn and GeSn. The densities of interface traps are deduced to be in the low 10(12) cm(-2) eV(-1) range and do not depend on the Sn-concentration. The new processes developed here are compatible with (Si)GeSn integration in large scale applications.

Mononuclear and Terminally Bound Titanium Nitrides

The Ti(III) azido complex (PN)2Ti(N3) (PN(-) = (N-(2-(diisopropylphosphino)-4-methylphenyl)-2,4,6-trimethylanilide), can be reduced with KC8 to afford the nitride salt [μ2-K(OEt2)]2[(PN)2Ti≡N]2 in excellent yield. While treatment of the dimer with 18-crown-6 yields a mononuclear nitride, complete encapsulation of the alkali metal with cryptand provides the terminally bound nitride as a discrete salt [K(2,2,2-Kryptofix)][(PN)2Ti≡N]. All complexes reported here have been structurally confirmed and also spectroscopically, and the Ti-Nnitride bonding has been probed theoretically via DFT-based methods.

Measurements of metal alkylamide density during atomic layer deposition using a mid-infrared light-emitting diode (LED) source

A nondispersive infrared (NDIR) gas analyzer that utilizes a mid-infrared light emitting diode (LED) source was demonstrated for monitoring the metal alkylamide compound tetrakis(dimethylamido) titanium (TDMAT), Ti[N(CH3)2]4. This NDIR gas analyzer was based on direct absorption measurement of TDMAT vapor in the C-H stretching spectral region, a spectral region accessed using a LED with a nominal emission center wavelength of 3.65 μm. The sensitivity of this technique to TDMAT was determined by comparing the absorbance measured using this technique to the TDMAT density as determined using in situ Fourier transform IR (FT-IR) spectroscopy. Fourier transform IR spectroscopy was employed because this technique could be used to (1) quantify TDMAT density in the presence of a carrier gas (the presence of which precludes the use of a capacitance manometer to establish TDMAT density) and (2) distinguish between TDMAT and other gas-phase species containing IR-active C-H stretching modes (allowing separation of the signal from the LED-based optical system into fractions due to TDMAT and other species, when necessary). During TDMAT-only delivery, i.e., in the absence of co-reactants and deposition products, TDMAT minimum detectable molecular densities as low as ≈4 × 10(12) cm(-3) were demonstrated, with short measurement times and appropriate signal averaging. Reactions involving TDMAT often result in the evolution of the reaction product dimethylamine (DMA), both as a thermal decomposition product in a TDMAT ampoule and as a deposition reaction product in the deposition chamber. Hence, the presence of DMA represents a significant potential interference for this technique, and therefore, the sensitivity of this technique to DMA was also determined by measuring DMA absorbance as a function of pressure. The ratio of the TDMAT sensitivity to the DMA sensitivity was determined to be ≈6.0. To further examine the selectivity of this technique, measurements were also performed during atomic layer deposition (ALD) of titanium dioxide using TDMAT and water. During ALD, potential interferences were expected from the evolution of DMA due to deposition reactions and the deposition on the windows of species containing IR-active C-H stretching modes. It was found that the interfering effects of the evolution of DMA and deposition of species on the windows corresponded to a maximum of only ≈6% of the total observed TDMAT density. However, this level of interference likely is relatively low compared to a typical chemical vapor deposition process in which co-reactants are introduced into the chamber at the same time.

Time-resolved surface infrared spectroscopy during atomic layer deposition

This work presents a novel method for obtaining surface infrared spectra with sub-second time resolution during atomic layer deposition (ALD). Using a rapid-scan Fourier transform infrared (FT-IR) spectrometer, we obtain a series of synchronized interferograms (120 ms) during multiple ALD cycles to observe the dynamics of an average ALD cycle. We use a buried metal layer (BML) substrate to enhance absorption by the surface species. The surface selection rules of the BML allow us to determine the contribution from the substrate surface as opposed to that from gas-phase molecules and species adsorbed at the windows. In addition, we use simulation to examine the origins of increased reflectivity associated with phonon absorption by the oxide layers. The simulations are also used to determine the decay in enhancement by the buried metal layer substrate as the oxide layer grows during the experiment. These calculations are used to estimate the optimal number of ALD cycles for our experimental method.

Ab initio calculation of the low-lying electronic states of the ZrN molecule

An ab initio calculation of the low-lying electronic states of zirconium nitride (ZrN) were performed by using a complete active space self-consistent field with multireference single and double excitation configuration interaction (MRSDCI). The potential energy curves of 21 low-lying electronic states of the ZrN molecule with different spin and spatial symmetries, in the representation 2s+1Λ(+/−) and below 30 000 cm–1, were identified. The harmonic frequency (ωe), the equilibrium internuclear distance (Re), the rotational constants (Be), the electronic energy with respect to the ground state (Te), and the permanent dipole moment (µ) were calculated for the considered electronic states. The comparison of these values with those available in the literature shows a very good agreement with either theoretical or experimental data. Fifteen new electronic states were studied here for the first time.

Quantum cascade laser-based measurement of metal alkylamide density during atomic layer deposition

An in situ gas-phase diagnostic for the metal alkylamide compound tetrakis(ethylmethylamido) hafnium (TEMAH), Hf[N(C(2)H(5))(CH(3))](4), was demonstrated. This diagnostic is based on direct absorption measurement of TEMAH vapor using an external cavity quantum cascade laser emitting at 979 cm(-1), coinciding with the most intense TEMAH absorption in the mid-infrared spectral region, and employing 50 kHz amplitude modulation with synchronous detection. Measurements were performed in a single-pass configuration in a research-grade atomic layer deposition (ALD) chamber. To examine the detection limit of this technique for use as a TEMAH delivery monitor, this technique was demonstrated in the absence of any other deposition reactants or products, and to examine the selectivity of this technique in the presence of deposition products that potentially interfere with detection of TEMAH vapor, it was demonstrated during ALD of hafnium oxide using TEMAH and water. This technique successfully detected TEMAH at molecular densities present during simulated industrial ALD conditions. During hafnium oxide ALD using TEMAH and water, absorbance from gas-phase reaction products did not interfere with TEMAH measurements while absorption by reaction products deposited on the optical windows did interfere, although interfering absorption by deposited reaction products corresponded to only ≈4% of the total derived TEMAH density. With short measurement times and appropriate signal averaging, estimated TEMAH minimum detectable densities as low as ≈2 × 10(12) molecules/cm(3) could be obtained. While this technique was demonstrated specifically for TEMAH delivery and hafnium oxide ALD using TEMAH and water, it should be readily applicable to other metal alkylamide compounds and associated metal oxide and nitride deposition chemistries, assuming similar metal alkylamide molar absorptivity and molecular density in the measurement chamber.

The Synthesis, Structure and Reactivity of B(C6F5)3-Stabilised Amide (MNH2) Complexes of the Group 4 Metals

Treatment of the homoleptic titanium amides [Ti(NR(2))(4)] (R=Me or Et) with the Brønsted acidic reagent H(3)NB(C(6)F(5))(3) results in the elimination of one molecule of amine and the formation of the four-coordinate amidoborate complexes [Ti(NR(2))(3){NH(2)B(C(6)F(5))(3)}], the identity of which was confirmed by X-ray crystallography. The reaction with [Zr(NMe(2))(4)] proceeds similarly but with retention of the amine ligand to give the trigonal-bipyramidal complex [Zr(NMe(2))(3){NH(2)B(C(6)F(5))(3)}(NMe(2)H)]. Cyclopentadienyl (Cp) amidoborate complexes, [MCp(NR(2))(2){NH(2)B(C(6)F(5))(3)}] (M=Ti, R=Me or Et; M=Zr, R=Me) can be prepared from [MCp(NR(2))(3)] and H(3)NB(C(6)F(5))(3), and exhibit greater thermal stability than the cyclopentadienyl-free compounds. H(3)NB(C(6)F(5))(3) reacts with nBuLi or LiN(SiMe(3))(2) to give LiNH(2)B(C(6)F(5))(3), which complexes with strong Lewis acids to form ion pairs that contain weakly coordinating anions. The attempted synthesis of metallocene amidoborate complexes from dialkyl or diamide precursors and H(3)NB(C(6)F(5))(3) was unsuccessful. However, LiNH(2)B(C(6)F(5))(3) does react with the highly electrophilic reagents [MCp(2)Me(mu-Me)B(C(6)F(5))(3)] to give [MCp(2)Me(mu-NH(2))B(C(6)F(5))(3)] (M=Zr or Hf). Comparison of the molecular structures of the Group 4 amidoborate complexes reveals very similar B--N, Ti--N and Zr--N bond lengths, which are consistent with a description of the bonding as a dative interaction between an {M(L)(n)(NH(2))} fragment and the Lewis acid B(C(6)F(5))(3). Each of the structures has an intramolecular hydrogen-bonding arrangement in which one of the nitrogen-bonded hydrogen atoms participates in a bifurcated FHF interaction to ortho-F atoms.

Intrinsic Dinitrogen Activation at Bare Metal Atoms

There is ongoing interest in metal complexes which bind dinitrogen and facilitate either its reduction or oxidation under mild conditions. In nature, the enzyme nitrogenase catalyzes this process, and dinitrogen fixation occurs under mild and ambient conditions at a metal-sulfur cluster in the center of the MoFe protein, but the mechanism of this process remains largely unknown. In the last few years, new important discoveries have been made in this field. In this review are discussed recent findings on the interaction of N(2) with metal atoms and metal-atom dimers from all groups of the periodic table as provided by gas-phase as well as matrix-isolation experiments. Intrinsic dinitrogen activation at such bare metal atoms is then related to corresponding processes at complexes, clusters, and surfaces.

Ab Initio Calculations of the Reaction Mechanisms for Metal−Nitride Deposition from Organo-Metallic Precursors onto Functionalized Self-Assembled Monolayers

An atomistic mechanism has been derived for the initial stages of the adsorption reaction for metal-nitride atomic layer deposition (ALD) from alkylamido organometallic precursors of Ti and Zr on alkyltrichorosilane-based self-assembled monolayers (SAMs). The effect of altering the terminal functional group on the SAM (including -OH, -NH2, -SH, and -NH(CH3)) has been investigated using the density functional theory and the MP2 perturbation theory. Reactions on amine-terminated SAMs proceed through the formation of a dative-bond complex with an activation barrier of 16-20 kcal/mol. In contrast, thiol-terminated SAMs form weak hydrogen-bonded intermediates with activation barriers between 7 and 10 kcal/mol. The deposition of Ti organometallic precursors on hydroxyl-terminated SAMs proceeds through the formation of stronger hydrogen-bonded complexes with barriers of 7 kcal/mol. Zr-based precursors form dative-bonded adducts with near barrierless transitions. This variety allows us to select a kinetically favorable substrate for a chosen precursor. The predicted order of reactivity of differently terminated SAMs and the temperature dependence of the initial reaction probability have been confirmed for Ti-based precursors by recent experimental results. We predict that the replacement of methyl groups by trifluoromethyl groups on the SAM backbone decreases the activation barrier for amine-terminated SAMs by 5 kcal/mol. This opens a route to alter the native reactivities of a given SAM termination, in this case making amine termination energetically viable. The surface distribution of SAM molecules has a strong effect on the adsorption kinetics of Ti-based precursors. Unimolecular side decomposition reactions were found to be kinetically competitive with adsorption at 400 K.

The Reaction of Tetrakis(dimethylamido)titanium with Self-Assembled Alkyltrichlorosilane Monolayers Possessing −OH, −NH2, and −CH3 Terminal Groups

The reactions of tetrakis(dimethylamido)titanium, Ti[N(CH(3))(2)](4), with alkyltrichlorosilane self-assembled monolayers (SAMs) terminated by -OH, -NH(2), and -CH(3) groups have been investigated with X-ray photoelectron spectroscopy (XPS). For comparison, a chemically oxidized Si surface, which serves as the starting point for formation of the SAMs, has also been investigated. In this work, we examined the kinetics of adsorption, the spatial extent, and stoichiometry of the reaction. Chemically oxidized Si has been found to be the most reactive surface examined here, followed by the -OH, -NH(2), and -CH(3) terminated SAMs, in that order. On all surfaces, the reaction of Ti[N(CH(3))(2)](4) was relatively facile, as evidenced by a rather weak dependence of the initial reaction probability on substrate temperature (T(s) = -50 to 110 degrees C), and adsorption could be described by first-order Langmuirian kinetics. The use of angle-resolved XPS demonstrated clearly that the anomalous reactivity of the -CH(3) terminated SAM could be attributed to reaction of Ti[N(CH(3))(2)](4) at the SAM/SiO(2) interface. Reaction on the -NH(2) terminated SAM proved to be the "cleanest", where essentially all of the reactivity could be associated with the terminal amine group. In this case, we found that approximately one Ti[N(CH(3))(2)](4) adsorbed per two SAM molecules. On all surfaces, there was significant loss of the N(CH(3))(2) ligand, particularly at high substrate temperatures, T(s) = 110 degrees C. These results show for the first time that it is possible to attach a transition metal coordination complex from the vapor phase to a surface with an appropriately functionalized self-assembled monolayer.

Formation of Titanium Nitride Nanoparticles within Mesoporous Silica SBA-15

We report the first synthesis of titanium nitride (TiN) nanoparticles inside the nanoscale channels of mesoporous silica SBA-15. The TiN precursor, Ti(NMe(2))(4) in toluene, was incorporated into the methyl group-modified channels of the SBA-15 powder. The functionalization of pore surfaces with methyl groups generates hydrophobic surfaces that facilitate impregnation with Ti(NMe(2))(4) and minimizes reactions between the TiN precursor and the hydroxyl groups on the surface of SBA-15. Formation of TiN nanoparticles inside the mesoporous channels of SBA-15 was carried out by subsequent ammonolysis at high temperatures (700-750 degrees C). The final products have been characterized by TEM and EELS images, powder XRD patterns, FTIR spectra, UV-vis absorption spectra, and nitrogen adsorption isotherm measurements to confirm the presence and distribution of TiN nanoparticles in the SBA-15 samples.

New titanium and zirconium complexes with M–NH2bonds formed by facile deprotonation of H3N·B(C6F5)3

Facile deprotonation of H3N.B(C6F5)3 with [M(NMe2)4](M = Zr or Ti) yields the novel amidoborate complexes [Zr(NMe2)3{NH2B(C6F5)3}(HNMe2)] and [Ti(NMe2)3{NH2B(C6F5)3}].

Zirconium, Hafnium, and Tantalum Amide Silyl Complexes: Their Preparation and Conversion to Metallaheterocyclic Complexes via γ-Hydrogen Abstraction by Silyl Ligands

New transition metal silyl amide complexes (Me(2)N)(3)Ta[N(SiMe(3))(2)](SiPh(2)Bu(t)) (1) and (Me(2)N)M[N(SiMe(3))(2)](2)(SiPh(2)Bu(t)) (M = Zr, 2a, and Hf, 2b) were found to undergo gamma-H abstraction by the silyl ligands to give metallaheterocyclic complexes (3) and (M = Zr, 4a, and Hf, 4b), respectively. The conversion of 1 to 3 follows first-order kinetics with DeltaH() = 23.6(1.6) kcal/mol and DeltaS() = 3(5) eu between 288 and 313 K. The formation of 4a from (Me(2)N)Zr[N(SiMe(3))(2)](2)Cl (5a) and Li(THF)(2)SiPh(2)Bu(t) (6) involves the formation of the intermediate 2a, followed by gamma-H abstraction. Kinetic studies of these consecutive reactions, a second-order reaction to give 2a and then a first-order gamma-H abstraction to give 4a, were conducted by an analytical method and a numerical method. At 278 K, the rate constants k(1) and k(2) for the two consecutive reactions are 2.17(0.03) x 10(-)(3) M(-)(1) s(-)(1) and 5.80(0.15) x 10(-)(5) s(-)(1) by the analytical method. The current work is a rare kinetic study of the A + B --> C --> D (+ E) consecutive reactions. Kinetic studies of the formation of a metallaheterocyclic moiety have, to our knowledge, not been reported. In addition, gamma-H abstraction by a silyl ligand to give such a metallaheterocyclic moiety is new. Theoretical investigations of the gamma-H abstraction by silyl ligands have been conducted by density functional theory calculations at the Becke3LYP (B3LYP) level, and they revealed that the formation of the metallacyclic complexes through gamma-H abstraction is entropically driven. X-ray crystal structures of (Me(2)N)(3)Ta[N(SiMe(3))(2)](SiPh(2)Bu(t)) (1), (Me(2)N)Zr[N(SiMe(3))(2)](2)Cl (5a), and (M = Zr, 4a, and Hf, 4b) are also reported.

Reactions of tetrakis(dimethylamide)-titanium, -zirconium and -hafnium with silanes: synthesis of unusual amide hydride complexes and mechanistic studies of titanium-silicon-nitride (Ti-Si-N) formation

M(NMe(2))(4) (M = Ti, Zr, Hf) were found to react with H(2)SiR'Ph (R' = H, Me, Ph) to yield H(2), aminosilanes, and black solids. Unusual amide hydride complexes [(Me(2)N)(3)M(mu-H)(mu-NMe(2))(2)](2)M (M = Zr, 1; Hf, 2) were observed to be intermediates and characterized by single-crystal X-ray diffraction. [(Me(2)N)(3)M(mu-D)(mu-NMe(2))(2)](2)M (1-d(2), 2-d(2)) were prepared through reactions of M(NMe(2))(4) with D(2)SiPh(2). Reactions of (Me(2)N)(3)ZrSi(SiMe(3))(3) (5) with H(2)SiR'Ph were found to give aminosilanes and (Me(2)N)(2)Zr(H)Si(SiMe(3))(3) (6). These reactions are reversible through unusual equilibria such as (Me(2)N)(3)ZrSi(SiMe(3))(3) (5) + H(2)SiPh(2) right arrow over left arrow (Me(2)N)(2)Zr(H)Si(SiMe(3))(3) (6) + HSi(NMe(2))Ph(2). The deuteride ligand in (Me(2)N)(2)Zr(D)Si(SiMe(3))(3) (6-d(1)) undergoes H-D exchange with H(2)SiR'Ph (R' = Me, H) to give 6 and HDSiR'Ph. The reaction of Ti(NMe(2))(4) with SiH(4) in chemical vapor deposition at 450 degrees C yielded thin Ti-Si-N ternary films containing TiN and Si(3)N(4). Ti(NMe(2))(4) reacts with SiH(4) at 23 degrees C to give H(2), HSi(NMe(2))(3), and a black solid. HNMe(2) was not detected in this reaction. The reaction mixture, upon heating, gave TiN and Si(3)N(4) powders. Analyses and reactivities of the black solid revealed that it contained -H and unreacted -NMe(2) ligands but no silicon-containing ligand. Ab initio quantum chemical calculations of the reactions of Ti(NR(2))(4) (R = Me, H) with SiH(4) indicated that the formation of aminosilanes and HTi(NR(2))(3) was favored. These calculations also showed that HTi(NH(2))(3) (3b) reacted with SiH(4) or H(3)Si-NH(2) in the following step to give H(2)Ti(NH(2))(2) (4b) and aminosilanes. The results in the current studies indicated that the role of SiH(4) in its reaction with Ti(NMe(2))(4) was mainly to remove amide ligands as HSi(NMe(2))(3). The removal of amide ligands is incomplete, and the reaction thus yielded "=Ti(H)(NMe(2))" as the black solid. Subsequent heating of the black solid and HSi(NMe(2))(3) may then yield TiN and Si(3)N(4), respectively, as the Ti-Si-N materials.

Ammonolysis of mono(pentamethylcyclopentadienyl) titanium(IV) derivatives

Ammonolyses of mono(pentamethylcyclopentadienyl) titanium(IV) derivatives [Ti(eta5-C5Me5)X3] (X = NMe2, Me, Cl) have been carried out in solution to give polynuclear nitrido complexes. Reaction of the tris(dimethylamido) derivative [Ti(eta5-C5Me5)(NMe2)3] with excess of ammonia at 80-100 degrees C gives the cubane complex [[Ti(eta5-C5Me5)]4(mu3-N)4] (1). Treatment of the trimethyl derivative [Ti(eta5-C5Me5)Me3] with NH3 at room temperature leads to the trinuclear imido-nitrido complex [[Ti(eta/5-CsMes)(mu-NH)]3(mu3-N)] (2) via the intermediate [[Ti(eta5-C5Me5)Me]2(mu-NH)2] (3). The analogous reaction of [Ti(eta5-C5Me5)Me3] with 2,4,6-trimethylaniline (ArNH2) gives the dinuclear imido complex [[Ti(eta5-C5Me5)Me])2(mu-NAr)2] (4) which reacts with ammonia to afford [[Ti(eta5-C5Me5)(NH2)]2(mu-NAr)2] (5). Complex 2 has been used, by treatments with the tris(dimethylamido) derivatives [Ti(eta5-C5H5-nRn)(NMe2)3], as precursor of the cubane nitrido systems [[Ti4(eta5-C5Me5)3(eta5-C5H5-nRn)](mu3-N)4] [R = Me n = 5 (1), R = H n = 0 (6), R = SiMe3 n = 1 (7), R = Me n = 1 (8)] via dimethylamine elimination. Reaction of [Ti(eta5-C5Me5)Cl3] or [Ti(eta5-C5Me5)(NMe2)Cl2] with excess of ammonia at room temperature gives the dinuclear complex [[Ti2(eta5-C5Me5)2Cl3(NH3)](mu-N)] (9) where an intramolecular hydrogen bonding and a nonlineal nitrido ligand bridge the "Ti(eta5-C5Me5)Cl(NH3)" and "Ti(eta5-C5Me5)Cl2" moieties. The molecular structures of [[Ti(eta5-C5Me5)Me]2 (mu-NAr)2] (4) and [[Ti2(eta5-C5Me5)2Cl3(NH3)](mu-N)] (9) have been determined by X-ray crystallographic studies. Density functional theory calculations also have been conducted on complex 9 to confirm the existence of an intramolecular N-H...Cl hydrogen bond and to evaluate different aspects of its molecular disposition.