Catalyzed Kinetic Growth in Two-Dimensional MoS2

Large-Area Epitaxial Growth of Transition Metal Dichalcogenides

Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.

Real-Time Observation for MoS2 Growth Kinetics and Mechanism Promoted by the Na Droplet

While the molten salt-catalyzed chemical vapor deposition (CVD) technique is recognized for its effectiveness in producing large-area transition metal chalcogenides, understanding their growth mechanisms involving alkali metals remains a challenge. Here, we investigate the kinetics and mechanism of sodium-catalyzed molybdenum disulfide (MoS2) growth and etching through image analysis conducted using an integrated CVD microscope. Sodium droplets, agglomerated via the thermal decomposition of the sodium cholate dispersant, catalyze the precipitation of supersaturated MoS2 laminates and induce growth despite fragmentation during this process. Triangular MoS2 crystals display a distinct self-exhausting exponential behavior and slow growth of thermodynamically favorable crystallographic faces, exhibiting a sulfur-dominant pressure. The growth and etching processes are facilitated by the scooting of sodium droplets along grain edges, displaying comparable rates. Leveraging these kinetics makes it possible to engineer atypical MoS2 shapes. This combined microscope not only enhances the understanding of growth mechanisms but also contributes to the facile development of next-generation nanomaterials.

Modulating the Coordination Chemistry of Cobalt Catalytic Sites by Ruthenium Species to Accelerate the Polysulfide Conversion Kinetics in Lithium-Sulfur Batteries

The performance of lithium-sulfur batteries is compromised by the loss of sulfur as dissolved polysulfides in the electrolyte and consequently the polysulfide redox shutting effect. Accelerating the conversion kinetics of polysulfide intermediates into sulfur or lithium sulfide through electrocatalysis has emerged as a root-cause solution. Co-N-C composite electrocatalyst is commonly used for this purpose. It is illustrated here that how the effectiveness can be improved by modulating the coordination chemistry of Co-N-C catalytic sites through introducing Ru species (RuCo-NC). The well-dispersed Ru in the Co-NC carbon matrix altered the total charge distribution over the Co-N-C catalytic sites and led to the formation of electron-rich Co-N, which is highly active for the polysulfide conversion reactions. Using Ru to modulate the electronic structure in the Co-N-C configuration and the additional catalytic sites over the Ru-Nx species can manifest optimal adsorption behavior of polysulfides. Consequently, the sulfur cathode with RuCo-NC can reduce the capacity fade rate from 0.11 % per cycle without catalyst (initial capacity of 701 mAh g-1) to 0.054 % per cycle (initial capacity of 1074 mAh g-1) over 400 cycles at 0.2 C rate. The results of this study provide the evidence for a feasible catalyst modification strategy for the polysulfide electrocatalysis.

In Situ Imaging of Two-Dimensional Crystal Growth Using a Heat-Resistant Optical Microscope

Revealing low-dimensional material growth dynamics is critical for crystal growth engineering. However, in a practical high-temperature growth system, the crystal growth process is a black box because of the lack of heat-resistant imaging tools. Here, we develop a heat-resistant optical microscope and embed it in a chemical vapor deposition (CVD) system to investigate two-dimensional (2D) crystal growth dynamics. This in situ optical imaging CVD system can tolerate temperatures of ≤900 °C with a spatial resolution of ∼1 μm. The growth of monolayer MoS2 crystals was studied as a model for 2D crystal growth. The nucleation and growth process have been imaged. Model analysis and simulation have revealed the growth rate, diffusion coefficient, and spatial distribution of the precursor. More importantly, a new vertex-kink-ledge model has been suggested for monolayer crystal growth. This work provides a new technique for in situ microscopic imaging at high temperatures and fundamental insight into 2D crystal growth.

Clean Transfer of Two-Dimensional Materials: A Comprehensive Review

The growth of two-dimensional (2D) materials through chemical vapor deposition (CVD) has sparked a growing interest among both the industrial and academic communities. The interest stems from several key advantages associated with CVD, including high yield, high quality, and high tunability. In order to harness the application potentials of 2D materials, it is often necessary to transfer them from their growth substrates to their desired target substrates. However, conventional transfer methods introduce contamination that can adversely affect the quality and properties of the transferred 2D materials, thus limiting their overall application performance. This review presents a comprehensive summary of the current clean transfer methods for 2D materials with a specific focus on the understanding of interaction between supporting layers and 2D materials. The review encompasses various aspects, including clean transfer methods, post-transfer cleaning techniques, and cleanliness assessment. Furthermore, it analyzes and compares the advances and limitations of these clean transfer techniques. Finally, the review highlights the primary challenges associated with current clean transfer methods and provides an outlook on future prospects.

Salt-Induced High-Density Vacancy-Rich 2D MoS2 for Efficient Hydrogen Evolution

Emerging non-noble metal 2D catalysts, such as molybdenum disulfide (MoS2), hold great promise in hydrogen evolution reactions. The sulfur vacancy is recognized as a key defect type that can activate the inert basal plane to improve the catalytic performance. Unfortunately, the method of introducing sulfur vacancies is limited and requires costly post-treatment processes. Here, a novel salt-assisted chemical vapor deposition (CVD) method is demonstrated for synthesizing ultrahigh-density vacancy-rich 2H-MoS2, with a controllable sulfur vacancy density of up to 3.35 × 1014 cm-2. This approach involves a pre-sprayed potassium chloridepromoter on the growth substrate. The generation of such defects is closely related to ion adsorption in the growth process, the unstable MoS2-K-H2O triggers the formation of sulfur vacancies during the subsequent transfer process, and it is more controllable and nondestructive when compared to traditional post-treatment methods. The vacancy-rich monolayer MoS2 exhibits exceptional catalytic activity based on the microcell measurements, with an overpotential of ≈158.8 mV (100 mA cm-2) and a Tafel slope of 54.3 mV dec-1 in 0.5 m H2SO4 electrolyte. These results indicate a promising opportunity for modulating sulfur vacancy defects in MoS2 using salt-assisted CVD growth. This approach represents a significant leap toward achieving better control over the catalytic performances of 2D materials.

Liquid-phase catalyst pre-seeding for controlled growth of layered MoS2 films over a large area via chemical vapor deposition

We introduce an innovative method that facilitates precise control of high-quality molybdenum disulfide (MoS2) growth, extending up to three layers, on a large scale. This scalable growth is realized by employing solution-based catalysts and precursors in conjunction with chemical vapor deposition (CVD). The catalyst not only diminishes the precursor's activation energy and melting temperature but also augments the overall reaction rate. By regulating the concentration ratio, we directly manipulate the precursor concentrations, thereby promoting clean growth. This unique control mechanism, as delineated in this study, is unprecedented. Our findings confirm that the catalyst introduction does not compromise the quality of the resulting samples. Field effect transistors (FETs) fabricated from the synthesized MoS2 display superior electrical properties; they exhibit a high carrier mobility of 32.1 cm2 V-1 s-1 and an on/off current ratio of 108, signifying their promising electrical performance. Accordingly, our findings suggest that the solution-based CVD strategy presented herein can be potentially utilized for the integration of FETs into a multitude of practical applications.

Large-area single-crystal TMD growth modulated by sapphire substrates

Transition metal dichalcogenides (TMDs) have recently attracted extensive attention due to their unique physical and chemical properties; however, the preparation of large-area TMD single crystals is still a great challenge. Chemical vapor deposition (CVD) is an effective method to synthesize large-area and high-quality TMD films, in which sapphires as suitable substrates play a crucial role in anchoring the source material, promoting nucleation and modulating epitaxial growth. In this review, we provide an insightful overview of different epitaxial mechanisms and growth behaviors associated with the atomic structure of sapphire surfaces and the growth parameters. First, we summarize three epitaxial growth mechanisms of TMDs on sapphire substrates, namely, van der Waals epitaxy, step-guided epitaxy, and dual-coupling-guided epitaxy. Second, we introduce the effects of polishing, cutting, and annealing processing of the sapphire surface on the TMD growth. Finally, we discuss the influence of other growth parameters, such as temperature, pressure, carrier gas, and substrate position, on the growth kinetics of TMDs. This review might provide deep insights into the controllable growth of large-area single-crystal TMDs on sapphires, which will propel their practical applications in high-performance nanoelectronics and optoelectronics.

Controlled Synthesis and Accurate Doping of Wafer-Scale 2D Semiconducting Transition Metal Dichalcogenides

2D semiconducting transition metal dichalcogenide (TMDCs) possess atomically thin thickness, a dangling-bond-free surface, flexible band structure, and silicon-compatible feature, making them one of the most promising channels for constructing state-of-the-art field-effect transistors in the post-Moore's era. However, the existing 2D semiconducting TMDCs fall short of meeting the industry criteria for practical applications in electronics due to their small domain size and the lack of an effective approach to modulate intrinsic physical properties. Therefore, it is crucial to prepare and dope 2D semiconducting TMDCs single crystals with wafer size. In this review, the up-to-date progress regarding the wafer-scale growth of 2D semiconducting TMDC polycrystalline and single-crystal films is systematically summarized. The domain orientation control of 2D TMDCs and the seamless stitching of unidirectionally aligned 2D islands by means of substrate design are proposed. In addition, the accurate and uniform doping of 2D semiconducting TMDCs and the effect on electronic device performances are also discussed. Finally, the dominating challenges pertaining to the enhancement of the electronic device performances of TMDCs are emphasized, and further development directions are put forward. This review provides a systematic and in-depth summary of high-performance device applications of 2D semiconducting TMDCs.

Dual Catalytic and Self-Assembled Growth of Two-Dimensional Transition Metal Dichalcogenides Through Simultaneous Predeposition Process

The recent introduction of alkali metal halide catalysts for chemical vapor deposition (CVD) of transition metal dichalcogenides (TMDs) has enabled remarkable two-dimensional (2D) growth. However, the process development and growth mechanism require further exploration to enhance the effects of salts and understand the principles. Herein, simultaneous predeposition of a metal source (MoO₃ ) and salt (NaCl) by thermal evaporation is adopted. As a result, remarkable growth behaviors such as promoted 2D growth, easy patterning, and potential diversity of target materials can be achieved. Step-by-step spectroscopy combined with morphological analyses reveals a reaction path for MoS₂ growth in which NaCl reacts separately with S and MoO₃ to form Na₂ SO₄ and Na₂ Mo₂ O₇ intermediates, respectively. These intermediates provide a favorable environment for 2D growth, including an enhanced source supply and liquid medium. Consequently, large grains of monolayer MoS₂ are formed by self-assembly, indicating the merging of small equilateral triangular grains on the liquid intermediates. This study is expected to serve as an ideal reference for understanding the principles of salt catalysis and evolution of CVD in the preparation of 2D TMDs.

Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications

Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

Patterned Growth of Transition Metal Dichalcogenide Monolayers and Multilayers for Electronic and Optoelectronic Device Applications

A simple, large area, and cost-effective soft lithographic method is presented for the patterned growth of high-quality 2D transition metal dichalcogenides (TMDs). Initially, a liquid precursor (Na₂ MoO₄ in an aqueous solution) is patterned on the growth substrate using the micromolding in capillaries technique. Subsequently, a chemical vapor deposition step is employed to convert the precursor patterns to monolayer, few layers, or bulk TMDs, depending on the precursor concentration. The grown patterns are characterized using optical microscopy, atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, and photoluminescence spectroscopy to reveal their morphological, chemical, and optical characteristics. Additionally, electronic and optoelectronic devices are realized using the patterned TMDs and tested for their applicability in field effect transistors and photodetectors. The photodetectors made of MoS₂ line patterns show a very high responsivity of 7674 A W^-1 and external quantum efficiency of 1.49 × 10⁶ %. Furthermore, the multiple grain boundaries present in patterned TMDs enable the fabrication of memtransistor devices. The patterning technique presented here may be applied to many other TMDs and related heterostructures, potentially advancing the fabrication of TMDs-based device arrays.

Molten-droplet-driven growth of MoS2 flakes with controllable morphology transition for hydrogen evolution reactions

The controllable fabrication of two-dimensional transition-metal dichalcogenides (2D TMDs) and a deep understanding of the corresponding process mechanisms are of fundamental importance for their further applications. In this study, the molten-droplet-driven (MDD) growth of MoS₂ based on a Na-Mo-O molten-salt chemical vapor deposition (CVD) method is demonstrated via temperature-dependent dispersion and spreading of droplets on a surface, yielding MoS₂ flakes with morphology transition from compact triangles to fractal dendrites with the increase in temperature. By building up the dependence between the formed morphologies of grown MoS₂ flakes and the corresponding kinetics during successive growth processes, it was found that the wetting-driven force, which is governed by interface free energies (surface tension) of molten droplets, would largely determine the driven movement of the droplet, and then the formation of different morphologies. Finally, based on these MoS₂ flakes, a systematic improvement of the hydrogen evolution reaction (HER) was demonstrated in accordance with the evolution of morphologies from compact to fractal. This study presents an important advance in understanding the growth mechanisms related to the molten-salt-assisted CVD fabrication of 2D TMDs and provides a facile method for tailoring the growth and application of 2D TMDs with controllably trimmed morphologies.

Additive-Assisted Growth of Scaled and Quality 2D Materials

2D materials are increasingly becoming key components in modern electronics because of their prominent electronic and optoelectronic properties. The central and premise to the entire discipline of 2D materials lie in the high-quality and scaled preparations. The chemical vapor deposition (CVD) method offers compelling benefits in terms of scalability and controllability in shaping large-area and high-quality 2D materials. The past few years have witnessed development of numerous CVD growth strategies, with the use of additives attracting substantial attention in the production of scaled 2D crystals. This review provides an overview of different additives used in CVD growth of 2D materials, as well as a methodical demonstration of their vital roles. In addition, the intrinsic mechanisms of the production of scaled 2D crystals with additives are also discussed. Lastly, reliable guidance on the future design of optimal CVD synthesis routes is provided by analyzing the accessibility, pricing, by-products, controllability, universality, and commercialization of various additives.

Surface modeling of photocatalytic materials for water splitting

The photocatalyst surface is central to photocatalytic reactions. However, it has been a challenge to explicitly understand both the surface configuration and the structure-dependent photocatalytic properties at the atomic level. First-principles density functional theory (DFT) calculations provide a versatile method that makes up for the lack of experimental surface studies. In DFT calculations, the initial surface model greatly affects the accuracy of the calculation results. Consequently, establishing a more realistic and more reliable material surface models is undoubtedly the first step and the most important link in theoretical calculations. The aim of this Perspective is to provide a general understanding of the methods for the surface modeling of photocatalytic materials in recent years. We begin with a discussion of the basic theories applied in photocatalytic surface research, followed by an explanation of the importance of surface modeling in photocatalysis. We then elaborate on the advantages and disadvantages of the basic surface model and briefly describe the latest surface modeling methods. Finally, we evaluate the rationality of current surface modeling methods. We summarize this Perspective by prospecting the developing directions of photocatalytic surface research in the future. It is believed that a reasonable surface model should be verified by both experimental characterization and theoretical computation with negative feedback.

Crystallinity-dependent photodegradation of metallic Bi in situ grown on perovskite Bi3TiNbO9 nanosheets toward antibiotic

Owing to its wide band gap of ~3.2 eV, perovskite Bi₃TiNbO₉ only absorbs the solar spectrum in the ultraviolet range, which restricts its use as an effective photocatalyst. Here, a controllable and facile reduction strategy was adopted to promote the in-situ growth of metallic Bi in perovskite Bi₃TiNbO₉ nanosheets. The in-situ growth of metallic Bi extended photoresponse to cover the whole visible region. Adsorption of tetracycline hydrochloride (TC-H) on the surface of Bi₃TiNbO₉ with in-situ growth of metallic Bi (BTNO_OV-Bi⁰) was dramatically enhanced, while BTNO_OV-Bi⁰ exhibited a superior photocatalytic performance for tetracycline hydrochloride (TC-H) degradation under visible light irradiation with the degradation rate of 5 times higher than that of pristine Bi₃TiNbO₉. Moreover, the degradation activity was strongly dependent on the crystallinity of metallic Bi phase in BTNO_OV-Bi⁰ samples. On the basis of experiment results, the visible-light driven catalytic mechanism of BTNO_OV-Bi⁰ was elucidated. Besides, the in-situ growth of metallic Bi was also introduced in perovskite Bi₅FeTi₃O₁₅, resulting in an enhanced photocatalytic activity, which indicated an enormous potential of this strategy in semiconductor structure tuning. Our study provides an effective approach to boost the performance of photocatalysts for solar-energy conversion.

Salt-assisted chemical vapor deposition of two-dimensional transition metal dichalcogenides

Salt-assisted chemical vapor deposition (SA-CVD), which uses halide salts (e.g., NaCl, KBr, etc.) and molten salts (e.g., Na2MoO4, Na2WO4, etc.) as precursors, is one of the most popular methods favored for the fabrication of two-dimensional (2D) materials such as atomically thin metal chalcogenides, graphene, and h-BN. In this review, the distinct functions of halogens (F, Cl, Br, I) and alkali metals (Li, Na, K) in SA-CVD are first clarified. Based on the current development in SA-CVD growth and its related reaction modes, the existing methods are categorized into the Salt 1.0 (halide salts-based) and Salt 2.0 (molten salts-based) techniques. The achievements, advantages, and limitations of each technique are discussed in detail. Finally, new perspectives are proposed for the application of SA-CVD in the synthesis of 2D transition metal dichalcogenides for advanced electronics.

Visualizing Van der Waals Epitaxial Growth of 2D Heterostructures

Understanding the growth mechanisms of 2D van der Waals (vdW) heterostructures is of great importance in exploring their functionalities and device applications. A custom-built system integrating physical vapor deposition and optical microscopy/Raman spectroscopy is employed to study the dynamic growth processes of 2D vdW heterostructures in situ. This allows the identification of a new growth mode with a distinctly different growth rate and morphology from those of the conventional linear growth mode. A model that explains the difference in morphologies and quantifies the growth rates of the two modes by taking the role of surface diffusion into account is proposed. A range of material combinations including CdI₂ /WS₂ , CdI₂ /MoS₂ , CdI₂ /WSe₂ , PbI₂ /WS₂ , PbI₂ /MoS₂ , PbI₂ /WSe₂ , and Bi₂ Se₃ /WS₂ is systematically investigated. These findings may be generalized to the synthesis of many other 2D heterostructures with controlled morphologies and physical properties, benefiting future device applications.

Revealing the Brønsted-Evans-Polanyi relation in halide-activated fast MoS2 growth toward millimeter-sized 2D crystals

Achieving large-size two-dimensional (2D) crystals is key to fully exploiting their remarkable functionalities and application potentials. Chemical vapor deposition growth of 2D semiconductors such as monolayer MoS2 has been reported to be activated by halide salts, for which various investigations have been conducted to understand the underlying mechanism from different aspects. Here, we provide experimental evidence showing that the MoS2 growth dynamics are halogen dependent through the Brønsted-Evans-Polanyi relation, based on which we build a growth model by considering MoS2 edge passivation by halogens, and theoretically reproduce the trend of our experimental observations. These mechanistic understandings enable us to further optimize the fast growth of MoS2 and reach record-large domain sizes that should facilitate practical applications.

Elucidation of Novel Potassium-Mediated Oxidation and Etching of Two-Dimensional Transition Metal Dichalcogenides

Preparation of edge-rich two-dimensional (2D) transition metal dichalocogenides (TMDs) has been actively investigated with the aim to improve their electrical and catalytic properties. Here, we elucidate the role of potassium ions in oxidation of TMDs and suggest a consequent novel anisotropic etching mechanism driven by self-running oxide droplets. We discover that potassium-mediated oxidation of MoS₂ leads to the formation of K-intercalated hexagonal-phase molybdenum oxides (h-K_xMoO₃), whereas orthorhombic-phase oxides are formed in the absence of potassium ions. Metastable h-K_xMoO₃ appears to have decomposed into oxide droplets at higher temperature. Self-running of the oxide droplets leads to layer-by-layer anisotropic etching of MoS₂ along the armchair direction. The motion of the droplets appears to be triggered by the surface energy instability between the oxide droplets and the underlying MoS₂ layer. This study opens new possibilities to design and manufacture novel edge-rich 2D TMDs that do not follow the equilibrium Wulff shape by modulating their oxidation with the assistance of alkali metals and also offers fundamental insights into the interactions between nanodroplets and 2D materials toward edge engineering.

Orientation-Dependent Conversion of VLS-Grown Lead Iodide Nanowires into Organic-Inorganic Hybrid Perovskites

In this study, we demonstrate Sn-assisted vapor-liquid-solid (VLS) growth of lead iodide (PbI₂) nanowires with van der Waals layered crystal structure and subsequent vapor-phase conversion into methylammonium lead iodide (CH₃NH₃PbI₃) perovskites. Our systematic microscopic investigations confirmed that the VLS-grown PbI₂ nanowires display two major growth orientations of [0001] and [1¯21¯0], corresponding to the stacking configurations of PbI₂ layers to the nanowire axis (transverse for [0001] vs. parallel for [1¯21¯0]). The resulting difference in the sidewall morphologies was correlated with the perovskite conversion, where [0001] nanowires showed strong localized conversion at top and bottom, as opposed to [1¯21¯0] nanowires with an evenly distributed degree of conversion. An ab initio energy calculation suggests that CH₃NH₃I preferentially diffuses and intercalates into (112¯0) sidewall facets parallel to the [1¯21¯0] nanowire axis. Our results underscore the ability to control the crystal structures of van der Waals type PbI₂ in nanowire via the VLS technique, which is critical for the subsequent conversion process into perovskite nanostructures and corresponding properties.