Ultrafast Charge Transfer and Hybrid Exciton Formation in 2D/0D Heterostructures

Enhance Carrier Diffusion of Monolayer MoSe2 by Interface Engineering

Two-dimensional materials hold great potentials for beyond-CMOS (complementary metal-oxide-semiconductor) electronical and optoelectrical applications, and the development of field effect transistors (FET) with excellent performance using such materials is of particular interest. How to improve the performance of devices thus becomes an urgent issue. The performance of FETs depends greatly on the intrinsic electrical properties of the channel materials, meanwhile the device interface quality, such as extrinsic scattering of charged impurities, charge traps, and substrate surface roughness have a great influence on the performance. In this paper, the impact of the interface quality on the carrier diffusion behaviors of monolayer (ML) MoSe2 has been investigated by using an in situ ultrafast laser technique to avoid the surface contamination during device fabrication process. Two types of self-assembled monolayers (SAMs) are introduced to modify the gate dielectric surface through an interface engineering approach to obtain chemical-stable interfaces. The results showed that the transport properties of ML MoSe2 were enhanced after interface engineering, for example, the carrier mobility of ML MoSe2 was improved from ∼59.4 to ∼166.5 cm2 V-1 s-1 after the SAM modification. Meanwhile, the photocarrier dynamics of ML MoSe2 before and after interfacial engineering were also carefully studied. Our studies provide a feasible method for improving the carrier diffusion behaviors of such materials, and making them suited for application in future integrated circuit.

Tunable Localized Charge Transfer Excitons in Nanoplatelet-2D Chalcogenide van der Waals Heterostructures

Observation of interlayer, charge transfer (CT) excitons in van der Waals heterostructures (vdWHs) based on 2D-2D systems has been well investigated. While conceptually interesting, these charge transfer excitons are highly delocalized and spatially localizing them requires twisting layers at very specific angles. This issue of localizing the CT excitons can be overcome via making nanoplate-2D material heterostructures (N2DHs) where one of the components is a spatially quantum confined medium. Here, we demonstrate the formation of CT excitons in a mixed dimensional system comprising MoSe2 and WSe2 monolayers and CdSe/CdS-based core/shell nanoplates (NPLs). Spectral signatures of CT excitons in our N2DHs were resolved locally at the 2D/single-NPL heterointerface using tip-enhanced photoluminescence (TEPL) at room temperature. By varying both the 2D material and the shell thickness of the NPLs and applying an out-of-plane electric field, the exciton resonance energy was tuned by up to 100 meV. Our finding is a significant step toward the realization of highly tunable N2DH-based next-generation photonic devices.

Establishing Multiple-Order Built-In Electric Fields Within Heterojunctions to Achieve Photocarrier Spatial Separation

Hybridizing two heterocomponents to construct a built-in electric field (BIEF) at the interface represents a significant strategy for facilitating charge separation in carbon dioxide (CO2)-photoreduction. However, the unidirectional nature of BIEFs formed by various low-dimensional materials poses challenges in adequately segregating the photogenerated carriers produced in bulk. In this study, leveraging zinc oxide (ZnO) nanodisks, a sulfurization reaction is employed to fabricate Z-scheme ZnO/zinc sulfide (ZnS) heterojunctions featuring a multiple-order BIEF. These heterojunctions reveal distinctive interfacial structures characterized by two semicoherent phase boundaries. The cathodoluminescence 2D maps and density functional theory calculation results demonstrate that the direction of the multiple-order BIEF spans from ZnS to ZnO. This directional alignment significantly fosters the spatial separation of photogenerated electrons and holes within ZnS nanoparticles and enhances CO2-to-carbon monoxide photoreduction performance (3811.7 µmol h-1 g-1). The findings present a novel pathway for structurally designing BIEFs within heterojunctions, while providing fresh insights into the migratory behavior of photogenerated carriers across interfaces.

Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications

Atomically thin 2D transition metal dichalcogenides (TMDs) have recently been spotlighted for next-generation electronic and photoelectric device applications. TMD materials with high carrier mobility have superior electronic properties different from bulk semiconductor materials. 0D quantum dots (QDs) possess the ability to tune their bandgap by composition, diameter, and morphology, which allows for a control of their light absorbance and emission wavelength. However, QDs exhibit a low charge carrier mobility and the presence of surface trap states, making it difficult to apply them to electronic and optoelectronic devices. Accordingly, 0D/2D hybrid structures are considered as functional materials with complementary advantages that may not be realized with a single component. Such advantages allow them to be used as both transport and active layers in next-generation optoelectronic applications such as photodetectors, image sensors, solar cells, and light-emitting diodes. Here, recent discoveries related to multicomponent hybrid materials are highlighted. Research trends in electronic and optoelectronic devices based on hybrid heterogeneous materials are also introduced and the issues to be solved from the perspective of the materials and devices are discussed.

Size-Regulated Hole and Triplet Energy Transfer from CdSe Quantum Dots to Organic Acceptors for Enhancing Singlet Oxygen Generation

Triplet energy transfer (TET) from semiconductor quantum dots (QDs) is an emerging strategy for sensitizing molecular triplets that have great potential in many applications. Here, CdSe QDs with varying sizes and 1-pyrenecarboxylic acid (PCA) are selected as the triplet donor and acceptor, respectively, to study the TET and charge transfer dynamics as well as enhanced singlet oxygen (1O2) generation properties. The results from static and transient spectroscopy measurements demonstrate that both the TET and hole transfer occur at the QDs-PCA interface. The observed significant drop in TET efficiency from 52 to 8% with increasing QD size results from the reduced TET driving force between the QDs and PCA, which is further confirmed by the more efficient sensitization of the anthracene derivative with a large TET driving force. In contrast, the hole transfer efficiency displays a small decrease with an increasing QD size due to a slight change in the hole driving force. The sensitized PCA triplets show a good ability of 1O2 generation, and the 1O2 formation rate increases 10-fold as the QD size decreases from 3.3 to 2.4 nm. These findings provide a profound understanding of the TET and hole transfer mechanism from QDs to molecules and are significant in designing efficient 1O2 generation systems based on semiconductor QDs and triplet molecules.

Nonadiabatic Dynamics Simulations for Photoinduced Processes in Molecules and Semiconductors: Methodologies and Applications

Nonadiabatic dynamics (NAMD) simulations have become powerful tools for elucidating complicated photoinduced processes in various systems from molecules to semiconductor materials. In this review, we present an overview of our recent research on photophysics of molecular systems and periodic semiconductor materials with the aid of ab initio NAMD simulation methods implemented in the generalized trajectory surface-hopping (GTSH) package. Both theoretical backgrounds and applications of the developed NAMD methods are presented in detail. For molecular systems, the linear-response time-dependent density functional theory (LR-TDDFT) method is primarily used to model electronic structures in NAMD simulations owing to its balanced efficiency and accuracy. Moreover, the efficient algorithms for calculating nonadiabatic coupling terms (NACTs) and spin-orbit couplings (SOCs) have been coded into the package to increase the simulation efficiency. In combination with various analysis techniques, we can explore the mechanistic details of the photoinduced dynamics of a range of molecular systems, including charge separation and energy transfer processes in organic donor-acceptor structures, ultrafast intersystem crossing (ISC) processes in transition metal complexes (TMCs), and exciton dynamics in molecular aggregates. For semiconductor materials, we developed the NAMD methods for simulating the photoinduced carrier dynamics within the framework of the Kohn-Sham density functional theory (KS-DFT), in which SOC effects are explicitly accounted for using the two-component, noncollinear DFT method. Using this method, we have investigated the photoinduced carrier dynamics at the interface of a variety of van der Waals (vdW) heterojunctions, such as two-dimensional transition metal dichalcogenides (TMDs), carbon nanotubes (CNTs), and perovskites-related systems. Recently, we extended the LR-TDDFT-based NAMD method for semiconductor materials, allowing us to study the excitonic effects in the photoinduced energy transfer process. These results demonstrate that the NAMD simulations are powerful tools for exploring the photodynamics of molecular systems and semiconductor materials. In future studies, the NAMD simulation methods can be employed to elucidate experimental phenomena and reveal microscopic details as well as rationally design novel photofunctional materials with desired properties.

Optical Enhancement of Indirect Bandgap 2D Transition Metal Dichalcogenides for Multi-Functional Optoelectronic Sensors

The unique electrical and optical properties of transition metal dichalcogenides (TMDs) make them attractive nanomaterials for optoelectronic applications, especially optical sensors. However, the optical characteristics of these materials are dependent on the number of layers. Monolayer TMDs have a direct bandgap that provides higher photoresponsivity compared to multilayer TMDs with an indirect bandgap. Nevertheless, multilayer TMDs are more appropriate for various photodetection applications due to their high carrier density, broad spectral response from UV to near-infrared, and ease of large-scale synthesis. Therefore, this review focuses on the modification of the optical properties of devices based on indirect bandgap TMDs and their emerging applications. Several successful developments in optical devices are examined, including band structure engineering, device structure optimization, and heterostructures. Furthermore, it introduces cutting-edge techniques and future directions for optoelectronic devices based on multilayer TMDs.

Efficient 2D to 0D Energy Transfer in HgTe Nanoplatelet-Quantum Dot Heterostructures through High-Speed Exciton Diffusion

Large area absorbers with localized defect emission are of interest for energy concentration via the antenna effect. Transfer between 2D and 0D quantum-confined structures is advantageous as it affords maximal lateral area antennas with continuously tunable emission. We report the quantum efficiency of energy transfer in in situ grown HgTe nanoplatelet (NPL)/quantum dot (QD) heterostructures to be near unity (>85%), while energy transfer in separately synthesized and well separated solutions of HgTe NPLs to QDs only reaches 47 ± 11% at considerably higher QD concentrations. Using Kinetic Monte Carlo simulations, we estimate an exciton diffusion constant of 1-10 cm2/s in HgTe NPLs, the same magnitude as that of 2D semiconductors. We also simulate in-solution energy transfer between NPLs and QDs, recovering an R-4 dependence consistent with 2D-0D near-field energy transfer even in randomly distributed NPL/QD mixtures. This highlights the advantage of NPLs 2D morphology and the efficiency of NPL/QD heterostructures and mixtures for energy harvesting.

Energy transfer and charge transfer between semiconducting nanocrystals and transition metal dichalcogenide monolayers

Nowadays, as a result of the emergence of low-dimensional hybrid structures, the scientific community is interested in their interfacial carrier dynamics, including charge transfer and energy transfer. By combining the potential of transition metal dichalcogenides (TMDs) and nanocrystals (NCs) with low-dimensional extension, hybrid structures of semiconducting nanoscale matter can lead to fascinating new technological scenarios. Their characteristics make them intriguing candidates for electronic and optoelectronic devices, like transistors or photodetectors, bringing with them challenges but also opportunities. Here, we will review recent research on the combined TMD/NC hybrid system with an emphasis on two major interaction mechanisms: energy transfer and charge transfer. With a focus on the quantum well nature in these hybrid semiconductors, we will briefly highlight state-of-the-art protocols for their structure formation and discuss the interaction mechanisms of energy versus charge transfer, before concluding with a perspective section that highlights novel types of interactions between NCs and TMDs.

Charge and energy transfer dynamics in single colloidal quantum dots/monolayer MoS2 heterostructures

The charge and energy transfer dynamics in colloidal CdSeTe/ZnS quantum dots (QDs)/monolayer molybdenum disulfide (MoS₂) heterostructures have been investigated by time-resolved single-dot photoluminescence (PL) spectroscopy. A time-gated method is used to separate the PL photons of single QDs from the PL photons of monolayer MoS₂, which are impossible to be separated by the spectral filter due to their spectral overlap. It is found that the energy transfer from MoS₂ to single QDs increases the exciton generation of the QDs by 37.5% and the energy transfer from single QDs to MoS₂ decreases the PL quantum yield of the QDs by 66.9%. In addition, it is found that MoS₂ increases the discharging rate of single QDs by 59%, while the charging rate remains unchanged. This investigation not only provides valuable insight into the exciton generation and recombination at the single-dot level across such hybrid 0D-2D interfaces but also promotes the application of the hybrid system in various optoelectronic devices.

Tuning photoelectron dynamic behavior of thiolate-protected MAu24 nanoclusters via heteroatom substitution

Heteroatom substitution of gold nanoclusters enables precise tuning of their physicochemical properties at the single-atom level, which has a significant impact on the applications related to excited states including photovoltaics, photocatalysis and photo-luminescence. To this end, understanding the effect of metal exchange on the structures, electronic properties and photoexcited dynamic behavior of nanoclusters is imperative. Combining density functional theory with time-domain nonadiabatic molecular dynamics simulations, herein we explored the effect of metal replacement on the electronic and vibrational properties as well as excited-state dynamics of ligand-protected MAu₂₄(SR)₁₈ (M = Pd, Pt, Cd, and Hg) nanoclusters. At the atomistic level, we elucidate hot carrier relaxation and recombination dynamic behavior with various doping atoms. Such distinct excited-state behavior of MAu₂₄(SR)₁₈ nanoclusters is attributed to different energy gaps and electron-phonon coupling between the donor and acceptor energy levels, owing to the perturbation of nanoclusters by a single foreign atom. The specific phonon modes involved in excited-state dynamics have been identified, which are associated with the MAu₁₂ core and ligand rings. This time-dependent excited-state dynamic study fills the gap between structure/composition and excited-state dynamic behavior of MAu₂₄(SR)₁₈ nanoclusters, which would stimulate the exploration of their applications in photoenergy storage and conversion.

Optical interference effect in the hybrid quantum dots/two-dimensional materials: photoluminescence enhancement and modulation

The optical interference effect originating from the multiple reflections between the two-dimensional (2D) materials and the substrates has been used to dramatically enhance their Raman signal. However, this effect in the hybrid structures of colloidal quantum dots (QD) coupled to 2D materials is always overlooked. Here we theoretically prove that the photoluminescence (PL) intensities of the QD films in the QD-2D hybrid structures can be strongly enhanced and modulated by the optical interference effect between QD and 2D interfaces, breaking the inherent standpoint that PL intensities of the QD films are always prominently quenched in these hybrid structures. The theoretical predictions have been well confirmed by experimental measurements of PL properties of CdSe/ZnS and CdSeTe/ZnS QD on different 2D materials (such as WSe₂, MoS₂, and h-BN). PL intensities of these QD films have been periodically modulated from almost disappearing to strong enhancement (with the enhancement of about 6 times). The optical interference effect uncovered in this work enables a powerful method to manipulate the PL property of the QD films in the different QD-2D hybrid structures. These results can boost the optical performance of the QD-based electronic and optoelectronic devices in the hybrid QD-2D structures.

Properties at the interface of the pristine CdSe and core-shell CdSe-ZnS quantum dots with ultrathin monolayers of two-dimensional MX2 (M: Mo, W; X: S, Se, Te) heterostructures from density functional theory

In this work, eight van der Waals heterojunctions based on CdSe or CdSe-ZnS quantum dots (QDs) and four commonly used two-dimensional transition metal dichalcogenides (2D-TMDs) are theoretically designed. On the basis of the constructed structures, density functional theory (DFT) method is employed to investigate the structural and optoelectronic related properties of these heterojunctions in detail. Specifically, their electronic properties including charge density differences, density of states, and band offsets are calculated, based on which band alignment types as well as their potentials as novel photovoltaic materials are discussed. According to these calculations, we proposed that several van der Waals heterostructures including MoS₂/CdSe, MoTe₂/CdSe, WSe₂/CdSe, MoTe₂/CdSe-ZnS, and WSe₂/CdSe-ZnS might be used as potential photovoltaic materials due to their type II band alignment characteristics. Moreover, the WSe₂/CdSe-ZnS heterostructure is expected to have optimal photovoltaic performance attributed to their large bond offsets and band gaps, which could not only facilitate charge separation processes, but also slow down charge recombination. Our present theoretical work could be helpful for the future experimental design of novel CdSe QDs and 2D-TMD based van der Waals heterostructures with excellent photovoltaic performances.

Long-range transport and ultrafast interfacial charge transfer in perovskite/monolayer semiconductor heterostructure for enhanced light absorption and photocarrier lifetime

Atomically thin two-dimensional transition metal dichalcogenides (TMDs) have shown great potential for optoelectronic applications, including photodetectors, phototransistors, and spintronic devices. However, the applications of TMD-based optoelectronic devices are severely restricted by their weak light absorption and short exciton lifetime due to their atomically thin nature and strong excitonic effect. To simultaneously enhance the light absorption and photocarrier lifetime of monolayer semiconductors, here, we report 3D/2D perovskite/TMD type II heterostructures by coupling solution processed highly smooth and ligand free CsPbBr3 film with MoS2 and WS2 monolayers. By time-resolved spectroscopy, we show interfacial hole transfer from MoS2 (WS2) to the perovskite layer occurs in an ultrafast time scale (100 and 350 fs) and interfacial electron transfer from ultrathin CsPbBr3 to MoS2 (WS2) in ∼3 (9) ps, forming a long-lived charge separation with a lifetime of >20 ns. With increasing CsPbBr3 thickness, the electron transfer rate from CsPbBr3 to TMD is slower, but the efficiency remains to be near-unity due to coupled long-range diffusion and ultrafast interfacial electron transfer. This study indicates that coupling solution processed lead halide perovskites with strong light absorption and long carrier diffusion length to monolayer semiconductors to form a type II heterostructure is a promising strategy to simultaneously enhance the light harvesting capability and photocarrier lifetime of monolayer semiconductors.

Probing the charge transfer and electron-hole asymmetry in graphene-graphene quantum dot heterostructure

In recent years, graphene-based van der Waals (vdW) heterostructures have come into prominence showcasing interesting charge transfer dynamics which is significant for optoelectronic applications. These novel structures are highly tunable depending on several factors such as the combination of the two-dimensional materials, the number of layers and band alignment exhibiting interfacial charge transfer dynamics. Here, we report on a novel graphene based 0D-2D vdW heterostructure between graphene and amine-functionalized graphene quantum dots (GQD) to investigate the interfacial charge transfer and doping possibilities. Using a combination ofab initiosimulations and Kelvin probe force microscopy (KPFM) measurements, we confirm that the incorporation of functional GQDs leads to a charge transfer induced p-type doping in graphene. A shift of the Dirac point by 0.05 eV with respect to the Fermi level (E_F) in the graphene from the heterostructure was deduced from the calculated density of states. KPFM measurements revealed an increment in the surface potential of the GQD in the 0D-2D heterostructure by 29 mV with respect to graphene. Furthermore, we conducted power dependent Raman spectroscopy for both graphene and the heterostructure samples. An optical doping-induced gating effect resulted in a stiffening of theGband for electrons and holes in both samples (graphene and the heterostructure), suggesting a breakdown of the adiabatic Born-Oppenheimer approximation. Moreover, charge imbalance and renormalization of the electron-hole dispersion under the additional influence of the doped functional GQDs is pointing to an asymmetry in conduction and carrier mobility.

Construction of a Bi2MoO6/CoOx/Au system with a dual-channel charge transfer path for enhanced tetracycline degradation

The introduction of two cocatalysts CoOx and Au constructs dual carrier transfer channels, which improves the photogenerated electron–hole pairs separation efficiency and photocatalytic performance.

Near-Unity-Efficiency Energy Transfer from Perovskite to Monolayer Semiconductor through Long-Range Migration and Asymmetric Interfacial Transfer

van der Waals heterostructures combining perovskites of strong light absorption with atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) hold great potential for light-harvesting and optoelectronic applications. However, current research studies integrating TMDs with low-dimensional perovskite nanomaterials generally suffer from poor carrier/energy transport and harnessing, stemming from poor interfacial interaction due to the nanostructured nature and ligands on surface/interface. To overcome the limitations, here, we report prototypical three-dimensional (3D)/2D perovskite/TMD heterostructures by combing highly smooth and ligand-free CsPbBr₃ film with a WSe₂ monolayer. We show that the energy transfer at interface occurs through asymmetric two-step charge-transfer process, with ultrafast hole transfer in ∼200 fs and subsequent electron transfer in ∼10 ps, driven by the asymmetric type I band alignment. The energy migration and transfer from CsPbBr₃ film to WSe₂ can be well described by a one-dimensional diffusion model with a carrier diffusion length of ∼500 nm in CsPbBr₃ film. Thanks to the long-range carrier migration and ultrafast interfacial transfer, highly efficient (>90%) energy transfer to WSe₂ can be achieved with CsPbBr₃ film as thick as ∼180 nm, which can capture most of the light above its band gap. The efficient light and energy harvesting in perovskite/TMD 3D/2D heterostructures suggest great promise in optoelectronic and photonic devices.

Modulating the 0D/2D Interface of Hybrid Semiconductors for Enhanced Photoelectrochemical Performances

Photoelectrochemical (PEC) solar-driven hydrogen production is a promising route to convert solar energy into chemical energy using semiconductors as active materials. However, the performance is still far from satisfactory due to a limited absorption range and rapid charge recombination. Compared to 3D semiconductors, 0D/2D nanohybrids may exhibit better PEC performance, due to the formation of an intimate interface between the two semiconductors that can inhibit carrier recombination. Herein, a photoelectrode based on a 0D/2D heterojunction is constructed by 0D metal chalcogenide quantum dots (QDs) and hierarchical 2D Zn-MoS₂ nanosheets (NSs). The effect of PbS, CdS, and their composite PbS@CdS QDs is analyzed by depositing them onto Zn-MoS₂ NSs using an in situ process. This distinctive heterojunction can leverage the light harvesting capabilities of QDs with the catalytic performance of Zn-MoS₂ . Compared to Zn-MoS₂ , Zn-MoS₂ /PbS, and Zn-MoS₂ /CdS, the obtained 0D/2D heterostructure based on the composite Zn-MoS₂ /PbS@CdS has a significantly enhanced photocurrent. The synergistic effect between 0D/2D heterojunction, the extended absorption range of QDs, and the strong coupling and band alignment between them lead to superior solar-driven PEC performance. This work can provide a new platform to construct multifunctional 0D/2D nanohybrids for optoelectronic applications, not limited to PEC devices.

Filling Exciton Trap-States in Two-Dimensional Tungsten Disulfide (WS2) and Diselenide (WSe2) Monolayers

Two-dimensional transition metal dichalcogenides (2D-TMDs) hold a great potential to platform future flexible optoelectronics. The beating hearts of these materials are their excitons known as X_A and X_B, which arise from transitions between spin-orbit split (SOS) levels in the conduction and valence bands at the K-point. The functionality of 2D-TMD-based devices is determined by the dynamics of these excitons. One of the most consequential channels of exciton decay on the device functionality is the defect-assisted recombination (DAR). Here, we employ steady-state absorption and emission spectroscopies, and pump density-dependent femtosecond transient absorption spectroscopy to report on the effect of DAR on the lifetime of excitons in monolayers of tungsten disulfide (2D-WS₂) and diselenide (2D-WSe₂). These pump-probe measurements suggested that while exciton decay dynamics in both monolayers are driven by DAR, in 2D-WS₂, defect states near the X_B exciton fill up before those near the X_A exciton. However, in the 2D-WSe₂ monolayer, the defect states fill up similarly. Understanding the contribution of DAR on the lifetime of excitons and the partition of this decay channel between X_A and X_B excitons may open new horizons for the incorporation of 2D-TMD materials in future optoelectronics.

Efficient Photoexcited Charge Separation at the Interface of a Novel 0D/2D Heterojunction: A Time-Dependent Ultrafast Dynamic Study

To achieve efficient conversion and avoid loss of solar energy, ultrafast charge separation and slow electron-hole recombination are desired. Combining time-dependent density functional theory (TD-DFT) with nonadiabatic molecular dynamics, Au₉(PH₃)₈/MoS₂, as a prototype for zero-dimensional/two-dimensional (0D/2D) heterojunction, has been demonstrated to present excellent light absorption capacity and effective charge separation characteristics. In the heterojunction, photoexcitation of the Au₉(PH₃)₈ nanocluster drives an ultrafast electron transfer from Au₉(PH₃)₈ to MoS₂ within 20 fs, whereas photoexcitation of the MoS₂ nanosheet leads to hole transfer from MoS₂ to Au₉(PH₃)₈ within 680 fs. The strong nonadiabatic coupling and prominent density overlap are responsible for the faster electron separation relative to hole separation. In competition with the charge separation, electron-hole recombination requires 205 ns, ensuring an effective carrier separation. Our atomistic TD-DFT simulation provides valuable insights into the photocarrier dynamics at the Au₉(PH₃)₈/MoS₂ interface, which would stimulate the exploration of 0D/2D hybrid materials for photovoltaic and optoelectronic devices.

Directed Energy Transfer from Monolayer WS2 to Near-Infrared Emitting PbS-CdS Quantum Dots

Heterostructures of two-dimensional (2D) transition metal dichalcogenides (TMDs) and inorganic semiconducting zero-dimensional (0D) quantum dots (QDs) offer useful charge and energy transfer pathways, which could form the basis of future optoelectronic devices. To date, most have focused on charge transfer and energy transfer from QDs to TMDs, that is, from 0D to 2D. Here, we present a study of the energy transfer process from a 2D to 0D material, specifically exploring energy transfer from monolayer tungsten disulfide (WS₂) to near-infrared emitting lead sulfide-cadmium sulfide (PbS-CdS) QDs. The high absorption cross section of WS₂ in the visible region combined with the potentially high photoluminescence (PL) efficiency of PbS QD systems makes this an interesting donor-acceptor system that can effectively use the WS₂ as an antenna and the QD as a tunable emitter, in this case, downshifting the emission energy over hundreds of millielectron volts. We study the energy transfer process using photoluminescence excitation and PL microscopy and show that 58% of the QD PL arises due to energy transfer from the WS₂. Time-resolved photoluminescence microscopy studies show that the energy transfer process is faster than the intrinsic PL quenching by trap states in the WS₂, thus allowing for efficient energy transfer. Our results establish that QDs could be used as tunable and high PL efficiency emitters to modify the emission properties of TMDs. Such TMD-QD heterostructures could have applications in light-emitting technologies or artificial light-harvesting systems or be used to read out the state of TMD devices optically in various logic and computing applications.

Bi2WO6-BiOCl heterostructure with enhanced photocatalytic activity for efficient degradation of oxytetracycline

The application of BiOCl in photocatalysis has been restricted by its low utilization of solar energy and fast recombination of charge carriers. In this study, zero-dimensional (0D) Bi₂WO₆ nanoparticles/two-dimensional (2D) layered BiOCl heterojunction composite was successfully constructed by facile hydrothermal and solvothermal methods. The most favorable sunlight photocatalytic activity was achieved for the as-prepared Bi₂WO₆–BiOCl composites with a ratio of 1%. The photocatalytic rate and mineralization efficiency of one typical antibiotic (i.e., oxytetracycline) over 1% Bi₂WO₆–BiOCl was about 2.7 and 5.3 times as high as that of BiOCl. Both experimental characterizations and density functional theory (DFT) calculations confirmed that the excellent photocatalytic performance mainly arised from the effective charge separation along the Bi₂WO₆ and BiOCl heterojunction interface. The effective electron transfer was driven by the internal electric field at the interfacial junction. In addition, 1% Bi₂WO₆–BiOCl exhibited excellent stability, and no apparent deactivation was observed after 4 test cycles. Therefore, the 0D/2D Bi₂WO₆–BiOCl heterojunction showed a great potential for the photocatalytic degradation of emerging organic pollutants.

Strong suppression of emission quenching in core quantum dots coupled to monolayer MoS2

Non-radiative processes like energy and charge transfer in 0D-2D semiconductor quantum dot (QD)-transition metal dichalcogenides (TMDs) and other two-dimensional layered materials, like graphene and analogs, leading to strong quenching of the photoluminescence (PL) of the usually highly emissive QDs, have been widely studied. Here we report control of the emission efficiency of core QDs placed in close proximity to the monolayers of MoS₂. The QDs are transferred in the form of a high-density compact monolayer with the dot-dot separation, δ as well as the MoS₂-QD separation, d, being controlled through chemical methods. While at larger separations we observe some quenching due to non-radiative processes, at smaller separations we observe enhanced emission from QDs on MoS₂ as compared to the reference despite the presence of significant non-radiative charge transfer. Interestingly, at small separations δ, we see evidence of strong dot-dot interactions and a significant red shift of QD PL which enhances spectral overlap with the B exciton of MoS₂. However, we observe significant reduction of PL quenching of QDs relative to longer δ and d cases, despite increased probability of non-radiative resonant energy transfer to MoS₂, due to the enhanced spectral overlap, as well as charge transfer. Significantly we observe that simultaneously the intensity of the B exciton of MoS₂ increases significantly suggesting the possibility of coherent and resonant radiative energy exchange between the 0D excitons in QDs and the 2D B exciton in MoS₂. Our study reveals interesting nanoscale light-matter interaction effects which can suppress quenching of QDs leading to potential applications of these nanoscale materials in light emitting and photonic devices.

Ultrafast dynamics of exciton formation and decay in two-dimensional tungsten disulfide (2D-WS2) monolayers

Excitons in two-dimensional transition metal dichalcogenide monolayers (2D-TMDs) are of essential importance due to their key involvement in 2D-TMD-based applications. For instance, exciton dissociation and exciton radiative recombination are indispensible processes in photovoltaic and light-emitting devices, respectively. These two processes depend drastically on the photogeneration efficiency and lifetime of excitons. Here, we incorporate femtosecond pump-probe spectroscopy to investigate the ultrafast dynamics of exciton formation and decay in a single crystal of monolayer 2D tungsten disulfide (WS2). Investigation of the formation dynamics of the lowest exciton (XA) indicated that the formation time linearly increases from ∼150 fs upon resonant excitation, to ∼500 fs following excitation that is ∼1.1 eV above the band-gap. This dependence is attributed to the time it takes highly excited electrons in the conduction band (CB) to relax to the CB minimum (CBM) and contribute to the formation of XA. This is confirmed by infrared measurements of electron intraband relaxation dynamics. Furthermore, pump-probe experiments suggested that the XA ground state depletion recovery dynamics depend on the excitation energy as well. The average recovery time increased from ∼10 ps in the case of resonant excitation to ∼50 ps following excitation well above the band-gap. Having the ability to control whether generating short-lived or long-lived electron-hole pairs in 2D-TMD monolayers opens a new horizon for the application of these materials. For instance, long-lived electron-hole pairs are appropriate for photovoltaic devices, but short-lived excitons are more beneficial for lasers with ultrashort pulses.

Valley-polarized local excitons in WSe2/WS2 vertical heterostructures

Two-dimensional van der Waals heterostructures (vdWHs) are drawing growing interest in the investigation of their valley polarization properties of localized excitons. However, most of the reported vdWHs were made by micro-mechanical peeling, limiting their large-scale production and practical applications. Furthermore, the circular polarization characters of localized excitons in WSe₂/WS₂ heterostructures remain elusive. Here, a bidirectional-flow physical vapor deposition technique was employed for the synthesis of the WSe₂/WS₂ type-II vertical heterostructures. The interfaces of such heterojunctions are sharp and clean, making the neutral excitons of the constituent layers quenched, which significantly highlights the luminescence of the local excitons. The circular polarization of localized excitons in this WSe₂/WS₂ heterostructure was demonstrated by circularly-polarized PL spectroscopy. The degree of the circular polarization of the localized excitons was determined as 7.17% for σ^- detection and 4.78% for σ⁺ detection. Such local excitons play a critical role in a quantum emitter with enhanced spontaneous emission rate that could lead to the evolution of LEDs. Our observations provide valuable information for the exploration of intriguing excitonic physics and the applications of innovative local exciton devices.

Emergent Optoelectronic Properties of Mixed-Dimensional Heterojunctions

ConspectusThe electronic dimensionality of a material is defined by the number of spatial degrees of confinement of its electronic wave function. Low-dimensional semiconductor nanomaterials with at least one degree of spatial confinement have optoelectronic properties that are tunable with size and environment (dielectric and chemical) and are of particular interest for optoelectronic applications such as light detection, light harvesting, and photocatalysis. By combining nanomaterials of differing dimensionalities, mixed-dimensional heterojunctions (MDHJs) exploit the desirable characteristics of their components. For example, the strong optical absorption of zero-dimensional (0D) materials combined with the high charge carrier mobilities of two-dimensional (2D) materials widens the spectral response and enhances the responsivity of mixed-dimensional photodetectors, which has implications for ultrathin, flexible optoelectronic devices. MDHJs are highly sensitive to (i) interfacial chemistry because of large surface area-to-volume ratios and (ii) electric fields, which are incompletely screened because of the ultrathin nature of MDHJs. This sensitivity presents opportunities for control of physical phenomena in MDHJs through chemical modification, optical excitation, externally applied electric fields, and other environmental parameters. Since this fast-moving research area is beginning to pose and answer fundamental questions that underlie the fundamental optoelectronic behavior of MDHJs, it is an opportune time to assess progress and suggest future directions in this field.In this Account, we first outline the characteristic properties, advantages, and challenges for low-dimensional materials, many of which arise as a result of quantum confinement effects. The optoelectronic properties and performance of MDHJs are primarily determined by dynamics of excitons and charge carriers at their interfaces, where these particles tunnel, trap, scatter, and/or recombine on the time scales of tens of femtoseconds to hundreds of nanoseconds. We discuss several photophysical phenomena that deviate from those observed in bulk heterojunctions, as well as factors that can be used to vary, probe, and ultimately control the behavior of excitons and charge carriers in MDHJ systems. We then discuss optoelectronic applications of MDHJs, namely, photodetectors, photovoltaics, and photocatalysts, and identify current performance limits compared to state-of-the-art benchmarks. Finally, we suggest strategies to extend the current understanding of dynamics in MDHJs toward the realization of stimuli-driven responses, particularly with respect to exciton delocalization, quantum emission, interfacial morphology, responsivity to external stimuli, spin selectivity, and usage of chemically reactive materials.

Porous lantern-like MFI zeolites composed of 2D nanosheets for highly efficient visible light-driven photocatalysis

Porous lantern-like MFI zeolites composed of 2D nanosheets were fabricated for highly efficient visible light-driven photocatalysis.

Quantum Confinement-Tunable Ultrafast Charge Transfer in a PbS Quantum Dots/WSe2 0D-2D Hybrid Structure: Transition from the Weak to Strong Coupling Regime

0D-2D mixed-dimensional hybrid structures, which combine tunable optical properties of 0D quantum dots (QDs) and high transport mobilities of 2D layered materials, have shown great potential in optoelectronic applications. Understanding charge transfer dynamics at the 0D-2D interface is essential but still lacking. Here, using PbS QD/WSe₂ system, by simply controlling PbS QD size, we show a tunable hole transfer (HT) rate by more than 4 orders of magnitude (from ∼1 ns to <100 fs) and, interestingly, transition from the weak to strong coupling regime due to quantum confinement effect. In contrast to reported layer-dependent energy transfer dynamics, we observe a robust HT rate against WSe₂ layer number, which can be ascribed to a subtle change of WSe₂ valence band structure with layer number. Our results are important to not only fundamental understanding of charge transfer behavior at nanoscale low-dimensional interface but also help design next-generation mixed-dimensional optoelectronic devices.

Ultrafast exciton transfer in perovskite CsPbBr3 quantum dots and topological insulator Bi2Se3 film heterostructure

Recently, topological insulator based heterostructures (HSs) have attracted tremendous research interest, due to their efficient carrier transfer features at the heterointerface induced by metallic surface states. Here, a novel HS comprising 0D perovskite CsPbBr₃ quantum dots (QDs) and 2D material topological insulator Bi₂Se₃ film is proposed and experimentally investigated. Specifically, steady state and time-resolved photoluminescence (PL) measurements are employed, from which a significant quenching behaviour is observed in the HS, with an average quenching factor of 93.2 ± 0.8%. Additionally, time-resolved PL spectroscopy affirms that the carrier transfer efficiency can be up to 92.6 ± 0.2%. Furthermore, the dynamics of carrier transfer within the 0D-2D HS are characterized by utilizing femtosecond broadband transient absorption (TA) spectroscopy, revealing an ultrafast exciton transfer from photoexcited CsPbBr₃ QDs to the Bi₂Se₃ film with a time-scale around 1.1 ± 0.2 ps. An alternative important finding is that the band renormalization is exhibited in CsPbBr₃ QDs of the HS, with the dominant factor being the Coulomb screening effect. This work is expected to provide some fundamental understanding of the ultrafast and efficient carrier transfer mechanism underneath HSs based on topological insulators.

Ultrasensitive Hybrid MoS2-ZnCdSe Quantum Dot Photodetectors with High Gain

Recently, two-dimensional (2D) materials, especially transition-metal dichalcogenides (TMDCs), have attracted extensive interest owing to their potential applications in optoelectronics. Here, we demonstrate a hybrid 2D-zero-dimensional (0D) photodetector, which consists of a single-layer or few-layer molybdenum disulfide (MoS₂) thin film and a thin layer of core/shell zinc cadmium selenide/zinc sulfide (ZnCdSe/ZnS) colloidal quantum dots (QDs). It is worth mentioning that the photoresponsivity of the hybrid 2D-0D photodetector is 3 orders of magnitude larger than the TMDC photodetector (from 10 to 10⁴ A W^-1). The detectivity of the hybrid structure detector is up to 10¹² Jones, and the gain is up to 10⁵. Due to an effective energy transfer from the photoexcited QD sensitizing layer to MoS₂ films, light absorption is enhanced and more excitons are generated. Thus, this hybrid 2D-0D photodetector takes advantage of high charge mobility in the MoS₂ layer and efficient photon absorption/exciton generation in the QDs, which suggests their promising applications in the development of TMDC-based optoelectronic devices.

Coexistence of Different Charge-Transfer Mechanisms in the Hot-Carrier Dynamics of Hybrid Plasmonic Nanomaterials

Hot-carrier dynamics at the interfaces of semiconductors and nanoclusters is of significant importance for photovoltaic and photocatalytic applications. Plasmon-driven charge separation processes are considered to be only dependent on the type of donor-acceptor interactions, that is, the conventional hot-electron-transfer mechanism for van der Waals interactions and the plasmon-induced interfacial charge-transfer transition mechanism for chemical bonds. Here, we demonstrate that the two mechanisms can coexist in a nanoparticle-semiconductor hybrid nanomaterial, both leading to faster transfer than carrier relaxation. The origin of the two mechanisms is attributed to the spatial polarization of the excited hot carriers, where the longitudinal state couples to semiconductors more strongly than the transverse state. Our findings provide a new insight into the photoinduced carrier dynamics, which is relevant for many applications in solar energy conversion, including efficient water splitting, photocatalysis, and photovoltaics.

Characterization of semiconductor photocatalysts

The long-standing popularity of semiconductor photocatalysts stimulated their characterization, which is the subject of this review aiming to help materials chemists and physicists, particularly students, to select suitable characterization methods.

Measuring the areal density of nanomaterials by electron energy-loss spectroscopy

Thickness measurements of nanomaterials are usually performed using transmission electron microscopy (TEM) techniques such as convergent beam electron diffraction (CBED) patterns analysis and the log-ratio method based on electron energy-loss spectroscopy (EELS) spectrum. However, it is challenging to obtain both the thickness and elemental information, especially in non-crystalline materials or for very thin samples. In this work, we establish a series of procedures to calculate the areal density of the material by directly measuring the inelastic scattering probability in a thin sample. Core-loss EELS are fit with a quantitative model to extract atomic areal density. Knowledge of one of the parameters (volume density or sample thickness) allows a measurement of the other. The absolute error between the known thicknesses and those measured was less than 4% using two-dimensional materials with a well-defined thickness as test samples, which is much better than the log-ratio method for very thin samples. One promising advantage of this method is the thickness/areal density determination in mixed phase/element systems. We use Ag-Co bimetallic triangles and black rutile as examples to calculate the thickness map in mixture systems in different cases. We also demonstrate this technique can be applied to measure the argon gas density in spherical cavities. This allows a temperature vs pressure curve to be obtained and illustrates the unique capability of this technique.

Resonant energy transfer in a van der Waals stacked MoS2 - functionalized graphene quantum dot composite with ab initio validation

Graphene-based van der Waals (vdW) heterostructures can facilitate exciting charge transfer dynamics in between structural layers with the emission of excitonic quasi-particles. However, the chemical formation of such heterostructures has been elusive thus far. In this work, a simple chemical approach is described to form such van der Waals (vdW) heterostructures using few layer MoS2 sheet embedded quantum dots (QDs) and amine-functionalized graphene quantum dots (GQDs) to probe the energy transfer mechanism for tunable photoluminescence (PL). Our findings reveal an interesting non-radiative Förster-type energy transfer with the quenching of functional GQD PL intensity after GQD/MoS2 composite formation, which validates the existing charge transfer dynamics analogous to 0D and 2D systems. The non-radiative type of energy transfer characteristic from GQD into the MoS2 layer through vdW interactions has been confirmed by photoluminescence, time decay analyses and ab initio calculations with the shifting of the Fermi level in the density of states towards the conduction band in the stacked configuration. These results are encouraging for the fundamental exploration of optical properties in other chemically prepared QD/2D based heterostructures to understand the charge transfer mechanism and fingerprint luminescence quenching for future optoelectronic device and optical sensing applications.

Interface Characterization and Control of 2D Materials and Heterostructures

2D materials and heterostructures have attracted significant attention for a variety of nanoelectronic and optoelectronic applications. At the atomically thin limit, the material characteristics and functionalities are dominated by surface chemistry and interface coupling. Therefore, methods for comprehensively characterizing and precisely controlling surfaces and interfaces are required to realize the full technological potential of 2D materials. Here, the surface and interface properties that govern the performance of 2D materials are introduced. Then the experimental approaches that resolve surface and interface phenomena down to the atomic scale, as well as strategies that allow tuning and optimization of interfacial interactions in van der Waals heterostructures, are systematically reviewed. Finally, a future outlook that delineates the remaining challenges and opportunities for 2D material interface characterization and control is presented.

Ultrafast Charge Transfer at a Quantum Dot/2D Materials Interface Probed by Second Harmonic Generation

Hybrid quantum dot (QD)/transition metal dichalcogenide (TMD) heterostructures are attractive components of next generation optoelectronic devices, which take advantage of the spectral tunability of QDs and the charge and exciton transport properties of TMDs. Here, we demonstrate tunable electronic coupling between CdSe QDs and monolayer WS₂ using variable length alkanethiol ligands on the QD surface. Using femtosecond time-resolved second harmonic generation (SHG) microscopy, we show that electron transfer from photoexcited CdSe QDs to single-layer WS₂ occurs on ultrafast (50 fs to 1 ps) time scales. Moreover, in the samples exhibiting the fastest charge transfer rates (≤50 fs) we observed oscillations in the time-domain signal corresponding to an acoustic phonon mode of the donor QD, which coherently modulates the SHG response of the underlying WS₂ layer. These results reveal surprisingly strong electronic coupling at the QD/TMD interface and demonstrate the usefulness of time-resolved SHG for exploring ultrafast electronic-vibrational dynamics in TMD heterostructures.

High-efficiency energy transfer in perovskite heterostructures

Here, we report the energy transfer in (PEA)₂PbI₄/MAPbBr₃ perovskite heterostructures. Under two-photon excitation, the photoluminescence (PL) emission of the (PEA)₂PbI₄ flake is nearly completely quenched, while that of the MAPbBr₃ microplate is greatly increased (6.5 folds higher) in the heterostructure. The opposite variation character of the PL emissions is attributed to the radiative energy transfer from the (PEA)₂PbI₄ flake to the MAPbBr₃ microplate. The radiative energy transfer occurs on an ultrafast timescale with a high efficiency (~100%). In addition, a strongly thickness- and wavelength-dependent interlayer interaction is observed under one-photon excitation. This work advocates great promise for revealing the interlayer interaction of perovskite heterostructures and developing high-performance optoelectronic devices.

Charge-transfer channel in quantum dot-graphene hybrid materials

The energy band theory of a classical semiconductor can qualitatively explain the charge-transfer process in low-dimensional hybrid colloidal quantum dot (QD)-graphene (GR) materials; however, the definite charge-transfer channels are not clear. Using density functional theory (DFT) and time-dependent DFT, we simulate the hybrid QD-GR nanostructure, and by constructing its orbital interaction diagram, we show the quantitative coupling characteristics of the molecular orbitals (MOs) of the hybrid structure. The main MOs are derived from the fragment MOs (FOs) of GR, and the Cd₁₃Se₁₃ QD FOs merge with the GR FOs in a certain proportion to afford the hybrid system. Upon photoexcitation, electrons in the GR FOs jump to the QD FOs, leaving holes in the GR FOs, and the definite charge-transfer channels can be found by analyzing the complex MOs coupling. The excited electrons and remaining holes can also be localized in the GR or the QD or transfer between the QD and GR with different absorption energies. The charge-transfer process for the selected excited states of the hybrid QD-GR structure are testified by the charge difference density isosurface. The natural transition orbitals, charge-transfer length analysis and 2D site representation of the transition density matrix also verify the electron-hole delocalization, localization, or coherence chacracteristics of the selected excited states. Therefore, our research enhances understanding of the coupling mechanism of low-dimensional hybrid materials and will aid in the design and manipulation of hybrid photoelectric devices for practical application in many fields.

Ultrafast Charge Transfer in Perovskite Nanowire/2D Transition Metal Dichalcogenide Heterostructures

Mixed-dimensional van der Waals (vdW) heterostructures between one-dimensional (1D) perovskite nanowires and two-dimensional (2D) transition metal dichalcogenides (TMDCs) hold great potential for novel optoelectronics and light-harvesting applications. However, the ultrafast carrier dynamics between the 1D perovskite nanowires and 2D TMDCs are currently not well understood, which is critical for related optoelectronic applications. Here we demonstrate vdW heterostructures of CsPbBr₃ nanowire/monolayer MoS₂ and CsPbBr₃ nanowire/monolayer WSe₂ and further present systematic investigations on their charge transfer dynamics. We show that CsPbBr₃/MoS₂ and CsPbBr₃/WSe₂ are type-I and type-II heterostructures, respectively. Both electrons and holes transfer from CsPbBr₃ to MoS₂ with an efficiency of 71%. As a contrast, holes transfer from CsPbBr₃ to WSe₂ with a carrier transfer efficiency of 70% and electrons transfer inversely within 7 ps. The ultrafast and efficient charge transfer in the 1D/2D perovskite-TMDC heterostructures suggest great promise in light emission, photodetector, and photovoltaic devices.

Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures

Two-dimensional (2D) materials have attracted increasing research interest because of the abundant choice of materials with diverse and tunable electronic, optical, and chemical properties. Moreover, 2D material based heterostructures combining several individual 2D materials provide unique platforms to create an almost infinite number of materials and show exotic physical phenomena as well as new properties and applications. To achieve these high expectations, methods for the scalable preparation of 2D materials and 2D heterostructures of high quality and low cost must be developed. Chemical vapor deposition (CVD) is a powerful method which may meet the above requirements, and has been extensively used to grow 2D materials and their heterostructures in recent years, despite several challenges remaining. In this review of the challenges in the CVD growth of 2D materials, we highlight recent advances in the controlled growth of single crystal 2D materials, with an emphasis on semiconducting transition metal dichalcogenides. We provide insight into the growth mechanisms of single crystal 2D domains and the key technologies used to realize wafer-scale growth of continuous and homogeneous 2D films which are important for practical applications. Meanwhile, strategies to design and grow various kinds of 2D material based heterostructures are thoroughly discussed. The applications of CVD-grown 2D materials and their heterostructures in electronics, optoelectronics, sensors, flexible devices, and electrocatalysis are also discussed. Finally, we suggest solutions to these challenges and ideas concerning future developments in this emerging field.

Ultrafast interfacial energy transfer and interlayer excitons in the monolayer WS2/CsPbBr3 quantum dot heterostructure

The idea of fabricating artificial solids with band structures tailored to particular applications has long fascinated condensed matter physicists. Heterostructure (HS) construction is viewed as an effective and appealing approach to engineer novel electronic properties in two dimensional (2D) materials. Different from common 2D/2D heterojunctions where energy transfer is rarely observed, CsPbBr₃ quantum dots (0D-QDs) interfaced with 2D materials have become attractive HSs for exploring the physics of charge transfer and energy transfer, due to their superior optical properties. In this paper, a new 0D/2D HS is proposed and experimentally studied, making it possible to investigate both light utilization and energy transfer. Specifically, this HS is constructed between monolayer WS₂ and CsPbBr₃ QDs, and exhibits a hybrid band alignment. The dynamics of energy transfer within the investigated 0D/2D HS is characterized by femtosecond transient absorption spectrum (TAS) measurements. The TAS results reveal that ultrafast energy transfer caused by optical excitation is observed from CsPbBr₃ QDs to the WS₂ layer, which can increase the exciton fluence within the WS₂ layer up to 69% when compared with pristine ML WS₂ under the same excitation fluence. Moreover, the formation and dynamics of interlayer excitons have also been investigated and confirmed in the HS, with a calculated recombination time of 36.6 ps. Finally, the overall phenomenological dynamical scenario for the 0D/2D HS is established within the 100 ps time region after excitation. The techniques introduced in this work can also be applied to versatile optoelectronic devices based on low dimensional materials.

Constructing a ZnIn2S4 nanoparticle/MoS2-RGO nanosheet 0D/2D heterojunction for significantly enhanced visible-light photocatalytic H2 production

Significantly enhanced visible-light photocatalytic H₂ production was achieved by constructing a ZnIn₂S₄/MoS₂-RGO 0D/2D heterojunction.

In situ growth of all-inorganic perovskite nanocrystals on black phosphorus nanosheets

We demonstrate a novel low-dimensional nanohybrid structure consisting of all-inorganic perovskite nanocrystals growing in situ on two-dimensional black phosphorus nanosheets.

A photo-responsive electrocatalyst: CdSe quantum dot sensitized WS2 nanosheets for hydrogen evolution in neutral solution

Under visible light irradiation, the photoinduced electrons help CdSe QD/WS₂ electrocatalysts to achieve a notable HER activity enhancement.