Directional Growth of Ultralong CsPbBr3 Perovskite Nanowires for High-Performance Photodetectors

Electrodeposition-Grown Mixed-Halide Inorganic Perovskite CsPbI3-xBrx Nanowires for Nanolaser Applications

Exploring new low-cost and controllable synthesis methods for perovskite nanowires plays an important role in achieving their large-scale applications. However, there have been no studies on the synthesis of cesium lead halide nanowires using the electrodeposition method. In this study, the single-crystal mixed-halide W-CsPbI3-xBrx nanowires are first synthesized via a low-cost and controllable electrodeposition method. The growth process of the W-CsPbI3-xBrx nanowires is observed in situ by using a metallurgical microscope. It is found that the W-CsPbI3-xBrx nanowires are grown via the oriented attachment of B-CsPbI3-xBrx nanocubes. More importantly, the mixed-halide W-CsPbI3-xBrx nanowires can transform into single-crystal B-CsPbI3-xBrx nanowires at a moderate annealing temperature. The obtained B-CsPbI3-xBrx nanowires are applied to nanolasers, and two lasing peaks are observed at 679 and 675 nm, with a threshold of 277.6 µJ cm-2. These results can promote the development of growth methods for perovskite nanomaterials, which can broaden the applicability of perovskite nanowires in integrated nanophotonic and optoelectronic devices.

Exploring Nanoscale Perovskite Materials for Next-Generation Photodetectors: A Comprehensive Review and Future Directions

The rapid advancement of nanotechnology has sparked much interest in applying nanoscale perovskite materials for photodetection applications. These materials are promising candidates for next-generation photodetectors (PDs) due to their unique optoelectronic properties and flexible synthesis routes. This review explores the approaches used in the development and use of optoelectronic devices made of different nanoscale perovskite architectures, including quantum dots, nanosheets, nanorods, nanowires, and nanocrystals. Through a thorough analysis of recent literature, the review also addresses common issues like the mechanisms underlying the degradation of perovskite PDs and offers perspectives on potential solutions to improve stability and scalability that impede widespread implementation. In addition, it highlights that photodetection encompasses the detection of light fields in dimensions other than light intensity and suggests potential avenues for future research to overcome these obstacles and fully realize the potential of nanoscale perovskite materials in state-of-the-art photodetection systems. This review provides a comprehensive overview of nanoscale perovskite PDs and guides future research efforts towards improved performance and wider applicability, making it a valuable resource for researchers.

Replicating CD Nanogrooves onto PDMS to Guide Nanowire Growth for Monolithic Flexible Photodetectors with High Bending-Stable UV-vis-NIR Photoresponse

Guided nanowires grown on polymer surfaces facilitate their seamless integration as flexible devices without post-growth processing steps. However, this is challenging due to the inability of polymer films to provide the required lattice-matching effect. In this work, this challenge is addressed by replicating highly aligned nanogrooves from a compact disc (CD) onto a casted flexible polydimethylsiloxane (PDMS) surface. Leveraging the replicated nanogrooves, copper hexadecafluorophthalocyanine (F16CuPc) and various metal phthalocyanines are guided into large-area, self-aligned nanowires. Subsequently, by employing specifically designed shadow masks during electrode deposition, these nanowires are seamlessly integrated as either a monolithic flexible photodetector with a large sensing area or on-chip flexible photodetector arrays. The resulting flexible photodetectors exhibit millisecond and long-term stable response to UV-vis-NIR light. Notably, they demonstrate exceptional bending stability, retaining stable and sensitive photoresponse even at a curvature radius as low as 0.5 cm and after enduring 1000 bending cycles. Furthermore, the photodetector array showcases consistent sensitivity and response speed across the entire array. This work not only proves the viability of guided nanowire growth on flexible polymer surfaces by replicating CD nanogrooves but also underscores the potential for large-scale monolithic integration of guided nanowires as flexible devices.

Spacer Conformation Induced Multiple Hydrogen Bonds in 2D Perovskite toward Highly Efficient Optoelectronic Devices

Two-dimensional (2D) Dion-Jacobson (DJ) perovskites typically outperform Ruddlesden-Popper (RP) analogs in terms of photodetection (PD). However, the mechanism behind this enhanced performance remains elusive. Theoretical calculations for elucidating interlayer spacer conformation-induced multiple hydrogen bonds in 2D perovskite are presented, along with the synthesis of DPAPbBr4 (DPB) single crystals (SCs) and their PD properties under X-ray/ultraviolet (UV) excitation. The high-quality DPB SC enhances PD with exceptional photoresponse attributes, including a high on/off ratio (4.89 × 104), high responsivity (2.44 A W⁻1), along with large dynamic linear range (154 dB) and low detection limit (7.1 nW cm⁻2), which are currently the best results among 2D perovskite SC detectors, respectively. Importantly, high-resolution images are obtained under UV illumination with weak light levels. The SC X-ray detector exhibits a high sensitivity of 663 µC Gyair⁻1 cm-2 at 10 V and a detection limit of 1.44 µGyair s⁻1. This study explores 2D DJ perovskites for efficient and innovative optoelectronic applications.

Diffusion-Dominated Luminescence Dynamics of CsPbBr3 Studied Using Cathodoluminescence and Microphotoluminescence Spectroscopy

Time-resolved or time-correlation measurements using cathodoluminescence (CL) reveal the electronic and optical properties of semiconductors, such as their carrier lifetimes, at the nanoscale. However, halide perovskites, which are promising optoelectronic materials, exhibit significantly different decay dynamics in their CL and photoluminescence (PL). We conducted time-correlation CL measurements of CsPbBr3 using Hanbury Brown-Twiss interferometry and compared them with time-resolved PL. The measured CL decay time was on the order of subnanoseconds and was faster than PL decay at an excited carrier density of 2.1 × 1018 cm-3. Our experiment and analytical model revealed the CL dynamics induced by individual electron incidences, which are characterized by highly localized carrier generation followed by a rapid decrease in carrier density due to diffusion. This carrier diffusion can play a dominant role in the CL decay time for undoped semiconductors, in general, when the diffusion dynamics are faster than the carrier recombination.

Self-Competitive Growth of CsPbBr3 Planar Nanowire Array

Semiconductor planar nanowire arrays (PNAs) are essential for achieving large-scale device integration. Direct heteroepitaxy of PNAs on a flat substrate is constrained by the mismatch in crystalline symmetry and lattice parameters between the substrate and epitaxial nanowires. This study presents a novel approach termed "self-competitive growth" for heteroepitaxy of CsPbBr3 PNAs on mica. The key to inducing the self-competitive growth of CsPbBr3 PNAs on mica involves restricting the nucleation of CsPbBr3 nanowires in a high-adsorption region, which is accomplished by overlaying graphite sheets on the mica surface. Theoretical calculations and experimental results demonstrate that CsPbBr3 nanowires oriented perpendicular to the boundary of the high-adsorption area exhibit greater competitiveness in intercepting the growth of nanowires in the other two directions, resulting in PNAs with a consistent orientation. Moreover, these PNAs exhibit low-threshold and stable amplified spontaneous emission under one-, two-, and three-photon excitation, indicating their potential for an integrated laser array.

Ultrastable Photodetectors Based on Blue CsPbBr3 Perovskite Nanoplatelets via a Surface Engineering Strategy

Recently, photodetectors based on perovskite nanoplatelets (NPLs) have attracted considerable attention in the visible spectral region owing to their large absorption cross-section, high exciton binding energy, excellent charge transfer properties, and appropriate flexibility. However, their stability and performance are still challenging for perovskite NPL photodetectors. Here, a surface engineering strategy to enhance the optical stability of blue-light CsPbBr3 NPLs by acetylenedicarboxylic acid (ATDA) treatment has been developed. ATDA has strong binding capacity and a short chain length, which can effectively passivate defects and significantly improve the photoluminescence quantum efficiency, stability, and carrier mobility of NPLs. As a result, ATDA-treated CsPbBr3 NPLs exhibit improved optical properties in both solutions and films. The NPL solution maintains high PL performance even after being heated at 80 °C for 2 h, and the NPL film remains nondegradable after 4 h of exposure to ultraviolet irradiation. Especially, photodetectors based on the treated CsPbBr3 NPL films demonstrate exceptional performance, especially when the detectivity approaches up to 9.36 × 1012 Jones, which can be comparable to the best CsPbBr3 NPL photodetectors ever reported. More importantly, the assembled devices demonstrated high stability (stored in an air environment for more than 30 days), significantly exceeding that of untreated NPLs.

MAPbI3perovskite photodetectors for high-performance optical wireless communication

High-sensitivity and fast-response photodetectors (PDs) are vital part of optical wireless communication (OWC) system. In this work, we develop an organic-inorganic hybrid perovskite material (MAPbI3) based p-i-n structured PD. By optimizing the precursor solution concertation, the PD showed a high responsivity of 0.98 A W-1, a fast response timetrise/tfallof 12/12.5 μs, a specific detectivity of 2.62 × 1013Jones, and the f-3dBof 24 kHz under the 532 nm laser and -0.2 V bias voltage. Furthermore, we designed an OWC system based on the prepared PD. With the baud rate of 19200 bps, the system exhibits a bit error rate less than 10-6, and it can realize 9.63 m long-distance communication and quick transmission applications such as strings, texts, photos, and audios. Our work demonstrates the great application potential of perovskite PDs in the field of optical communication.

Spin Texture Sensitive Photodetection by Dion-Jacobson Tin Halide Perovskites

The organic spacer molecule is known to regulate the optoelectronic properties of two-dimensional (2D) perovskites. We show that the spacer layer thickness determines the nature of optical transitions, direct or indirect, by controlling the structural properties of the inorganic layer. The spin-orbit interactions lead to different electron spin orientations for the states associated with the conduction band minimum (CBM) and the valence band maximum (VBM). This leads to a direct as well as an indirect component of the transitions, despite them being direct in momentum space. The shorter chains have a larger direct component, leading to a better optoelectronic performance. The mixed halide Sn2+ Dion-Jacobson (DJ) perovskite with the shortest 4-C diammonium spacer outshines the photodetection parameters of those having longer (6-C and 8-C) spacers and the corresponding Ruddlesden-Popper (RP) phases. The DJ system with a 4-C spacer and equimolar Br/I embodies an unprecedentedly high responsivity of 78.1 A W-1 under 3 V potential bias at 485 nm wavelength, among the DJ perovskites. Without any potential bias, this phase manifests the self-powered photodetection parameters of 0.085 A W-1 and 9.9 × 1010 jones. The unusual role of electron spin texture in these high-performance photodetectors of the lead-free DJ perovskites provides an avenue to exploit the information coded in spins for semiconductor devices without any ferromagnetic supplement or magnetic field.

The Anisotropic Complex Dielectric Function of CsPbBr3 Perovskite Nanorods Obtained via an Iterative Matrix Inversion Method

Colloidal lead halide perovskite nanorods have recently emerged as promising optoelectronic materials. However, more information about how shape anisotropy impacts their complex dielectric function is required to aid the development of applications that take advantage of the strongly polarized absorption and emission. Here, we have determined the anisotropy of the complex dielectric function of CsPbBr3 nanorods by analyzing the ensemble absorption spectra in conjunction with the ensemble spectral fluorescence anisotropy. This strategy allows us to distinguish the absorption of light parallel and perpendicular to the main axis so that the real and imaginary components of the dielectric function along each direction can be determined by the use of an iterative matrix inversion (IMI) methodology. We find that quantum confinement gives rise to unique axis-dependent electronic features in the dielectric function that increase the overall fluorescence anisotropy in addition to the optical anisotropy that results from particle shape, even in the absence of quantum confinement. Further, the procedure outlined here provides a strategy for obtaining anisotropic complex dielectric functions of colloidal materials of varying composition and aspect ratios using ensemble solution-phase spectroscopy.

All-inorganic lead halide perovskite nanocrystals applied in advanced display devices

Advanced display devices are in greater demand due to their large color gamut, high color purity, ultrahigh visual resolution, and small size pixels. All-inorganic lead halide perovskite (AILHP) nanocrystals (NCs) possess inherent advantages such as narrow emission width, saturated color, and flexible integration, and have been developed as functional films, light sources, backlight components, and display panels. However, some drawbacks still restrict the practical application of advanced display devices based on AILHP NCs, including working stability, large-scale synthesis, and cost. In this review, we focus on AILHP NCs, review the recent progress in materials synthesis, stability improvement, patterning techniques, and device application. We also highlight the important role of materials systems in creating advanced display devices, followed by the challenges and opportunities in industrial processes. This review provides beneficial inspiration for the future development of AILHP NCs in colorful and white backlight, as well as high resolution full-color displays.

Two-step spin coating CsPbBr3 thin films and photodetectors in the atmosphere

Recently, inorganic halide perovskites, especially CsPbBr₃, have been attracting attention because of their high efficiency, wide color gamut, and narrow luminescent spectrum. To elevate the perovskite devices' performance, optimizations of crystalline quality, device structures, and fabrication process are essential. Currently, the state-of-the-art fabrication approach of CsPbBr₃ is spin-coating in an inert environment (nitrogen, argon, etc.), which requires temperature and humidity control. In this work, a CsPbBr₃-based visible photodetector (PD) is realized in a humid atmosphere, whose performances were comparable to those reported in an inert glovebox. The dependencies of responsivity and transient time on CsBr coating layer numbers and electrode period were also investigated. The best device performance was obtained with 4 layers of CsBr coating with a responsivity of 107.2 mA/W, detectivity of 4.29 × 10¹⁰ Jones, and quantum efficiency of 25.4%. The rise time of the 3-4-layer CsBr-coated PD was reduced by the higher crystalline quality and carrier mobility, while the decay time of the 1-layer CsBr-coated PD was faster since the dense defect induced non-radiative recombination centers. With the period T increasing, the responsivity decreased, while the transient times increased. We believe that our results could benefit the future optimization of perovskite materials and PDs.

An Advanced Strategy to Enhance TENG Output: Reducing Triboelectric Charge Decay

The Internet of Things (IoT) is poised to accelerate the construction of smart cities. However, it requires more than 30 billion sensors to realize the IoT vision, posing great challenges and opportunities for industries of self-powered sensors. Triboelectric nanogenerator (TENG), an emerging new technology, is capable of easily converting energy from surrounding environment into electricity, thus TENG has tremendous application potential in self-powered IoT sensors. At present, TENG encounters a bottleneck to boost output for large-scale commercial use if just by promoting triboelectric charge generation, because the output is decided by the triboelectric charge dynamic equilibrium between generation and decay. To break this bottleneck, the strategy of reducing triboelectric charge decay to enhance TENG output is focused. First, multiple mechanisms of triboelectric charge decay are summarized in detail with basic theoretical principles for future research. Furthermore, recent advances in reducing triboelectric charge decay are thoroughly reviewed and outlined in three aspects: inhibition and application of air breakdown, simultaneous inhibition of air breakdown and triboelectric charge drift/diffusion, and inhibition of triboelectric charge drift/diffusion. Finally, challenges and future research focus are proposed. This review provides reference and guidance for enhancing TENG output.

Morphology dependent light-induced photoluminescence enhancement of CsPbBr3 microcrystals

Herein, we report a facile method for growing CsPbBr₃ cube and prism microcrystals by microspacing in-air sublimation. Morphology-dependent photoluminescence behavior investigation reveals that the CsPbBr₃ cubes show higher photoluminescence quantum yield and longer PL lifetime than the prisms. In contrast, CsPbBr₃ prisms exhibit more considerable light-induced photoluminescence enhancement.

Au-Seeded CsPbI3 Nanowire Optoelectronics via Exothermic Nucleation

Converting vapor precursors to solid nanostructures via a liquid noble-metal seed is a common vapor deposition principle. However, such a noble-metal-seeded process is excluded from the crystalline halide perovskite synthesis, mainly hindered by the growth mechanism shortness. Herein, powered by a spontaneous exothermic nucleation process (ΔH < 0), the Au-seeded CsPbI₃ nanowires (NWs) growth is realized based on a vapor-liquid-solid (VLS) growth mode. It is energetically favored that the Au seeds are reacted with a Pb vapor precursor to form molten Au-Pb droplets at temperatures down to 212 °C, further triggering the low-temperature VLS growth of CsPbI₃ NWs. More importantly, this Au-seeded process reduces in-bandgap trap states and consequently avoids Shockley-Read-Hall recombination, contributing to outstanding photodetector performances. Our work extends the powerful Au-seeded VLS growth mode to the emerging halide perovskites, which will facilitate their nanostructures with tailored material properties.

Metal Halide Perovskite Nanowires: Controllable Synthesis, Mechanism, and Application in Optoelectronic Devices

Metal halide perovskites are promising energy materials because of their high absorption coefficients, long carrier lifetimes, strong photoluminescence, and low cost. Low-dimensional halide perovskites, especially one-dimensional (1D) halide perovskite nanowires (NWs), have become a hot research topic in optoelectronics owing to their excellent optoelectronic properties. Herein, we review the synthetic strategies and mechanisms of halide perovskite NWs in recent years, such as hot injection, vapor phase growth, selfassembly, and solvothermal synthesis. Furthermore, we summarize their applications in optoelectronics, including lasers, photodetectors, and solar cells. Finally, we propose possible perspectives for the development of halide perovskite NWs.

Lead-Free Metal Halide Perovskite Nanocrystals: From Fundamentals to Applications

Lead (Pb) halide perovskite nanocrystals, with the general formula APbX₃ , where A=CH₃ NH³⁺ , CH(NH₂ )²⁺ , or Cs⁺ and X=Cl^- , Br^- , or I^- , have emerged as a class of materials with promising properties due to their remarkable optical properties and solar cell performance. However, important issues still need to be addressed to enable practical applications of these materials, such as instability, mass production, and Pb toxicity. Recent studies have carried out the replacement of Pb by various less-toxic cations as Sn, Ge, Sb, and Bi. This variety of chemical compositions provide Pb-free perovskite and metal halide nanostructures with a wide spectral range, in addition to being considered less toxic, therefore having greater practical applicability. Highlighting the necessity to address and solve the toxicity problems related to Pb-containing perovskite, this review considers the prospects of the Pb-free perovskite, involving synthesis methods, and properties of them, including advantages, disadvantages, and applications.

Three-Dimensional Nanopillar Arrays-Based Efficient and Flexible Perovskite Solar Cells with Enhanced Stability

Perovskite nanopillars (PNPs) are propitious candidates for solar irradiation harvesting and are potential alternatives to thin films in flexible photovoltaics. To realize efficient daily energy output, photovoltaics must absorb sunlight over a broad range of incident angles and wavelengths congruent with the solar spectrum. Herein, we report highly periodic three-dimensional (3D) PNP-based flexible photovoltaics possessing a core-shell structure. The vertically aligned PNP arrays demonstrate up to 95.70% and 75.10% absorption at peak and under an incident angle of 60°. The efficient absorption and the orthogonal carrier collection facilitate an external quantum efficiency of 84.0%-89.18% for broadband wavelength. PNPs have been successfully implemented in flexible solar cells. The porous alumina membrane protects PNPs against water and oxygen intrusion and thereby imparts robustness to photovoltaic devices. Meanwhile, the excellent tolerance to mechanical stress/strain enables our unique PNP-based device to provide efficient solar-to-electricity conversion while undergoing mechanical bending.

Split-Ring Structured All-Inorganic Perovskite Photodetector Arrays for Masterly Internet of Things

Photodetectors with long detection distances and fast response are important media in constructing a non-contact human-machine interface for the Masterly Internet of Things (MIT). All-inorganic perovskites have excellent optoelectronic performance with high moisture and oxygen resistance, making them one of the promising candidates for high-performance photodetectors, but a simple, low-cost and reliable fabrication technology is urgently needed. Here, a dual-function laser etching method is developed to complete both the lyophilic split-ring structure and electrode patterning. This novel split-ring structure can capture the perovskite precursor droplet efficiently and achieve the uniform and compact deposition of CsPbBr3 films. Furthermore, our devices based on laterally conducting split-ring structured photodetectors possess outstanding performance, including the maximum responsivity of 1.44 × 105 mA W-1, a response time of 150 μs in 1.5 kHz and one-unit area < 4 × 10-2 mm2. Based on these split-ring photodetector arrays, we realized three-dimensional gesture detection with up to 100 mm distance detection and up to 600 mm s-1 speed detection, for low-cost, integrative, and non-contact human-machine interfaces. Finally, we applied this MIT to wearable and flexible digital gesture recognition watch panel, safe and comfortable central controller integrated on the car screen, and remote control of the robot, demonstrating the broad potential applications.

Surface Versus Bulk State Transitions in Inkjet-Printed All-Inorganic Perovskite Quantum Dot Films

The anion exchange of the halides, Br and I, is demonstrated through the direct mixing of two pure perovskite quantum dot solutions, CsPbBr3 and CsPbI3, and is shown to be both facile and result in a completely alloyed single phase mixed halide perovskite. Anion exchange is also observed in an interlayer printing method utilizing the pure, unalloyed perovskite solutions and a commercial inkjet printer. The halide exchange was confirmed by optical absorption spectroscopy, photoluminescent spectroscopy, X-ray diffraction, and X-ray photoemission spectroscopy characterization and indicates that alloying is thermodynamically favorable, while the formation of a clustered alloy is not favored. Additionally, a surface-to-bulk photoemission core level transition is observed for the Cs 4d photoemission feature, which indicates that the electronic structure of the surface is different from the bulk. Time resolved photoluminescence spectroscopy indicates the presence of multiple excitonic decay features, which is argued to originate from states residing at surface and bulk environments.

Structural Disorder in Higher-Temperature Phases Increases Charge Carrier Lifetimes in Metal Halide Perovskites

Solar cells and optoelectronic devices are exposed to heat that degrades performance. Therefore, elucidating temperature-dependent charge carrier dynamics is essential for device optimization. Charge carrier lifetimes decrease with temperature in conventional semiconductors. The opposite, anomalous trend is observed in some experiments performed with MAPbI₃ (MA = CH₃NH₃⁺) and other metal halide perovskites. Using ab initio quantum dynamics simulation, we establish the atomic mechanisms responsible for nonradiative electron-hole recombination in orthorhombic-, tetragonal-, and cubic MAPbI₃. We demonstrate that structural disorder arising from the phase transitions is as important as the disorder due to heating in the same phase. The carrier lifetimes grow both with increasing temperature in the same phase and upon transition to the higher-temperature phases. The increased lifetime is rationalized by structural disorder that induces partial charge localization, decreases nonadiabatic coupling, and shortens quantum coherence. Inelastic and elastic electron-vibrational interactions exhibit opposite dependence on temperature and phase. The partial disorder and localization arise from thermal motions of both the inorganic lattice and the organic cations and depend significantly on the phase. The structural deformations induced by thermal fluctuations and phase transitions are on the same order as deformations induced by defects, and hence, thermal disorder plays a very important role. Since charge localization increases carrier lifetimes but inhibits transport, an optimal regime maximizing carrier diffusion can be designed, depending on phase, temperature, material morphology, and device architecture. The atomistic mechanisms responsible for the enhanced carrier lifetimes at elevated temperatures provide guidelines for the design of improved solar energy and optoelectronic materials.

Single-Crystalline Perovskite p-n Junction Nanowire Arrays for Ultrasensitive Photodetection

Highly sensitive photodetectors play significant roles in modern optoelectronic integrated circuits. Constructing p-n junctions has been proven to be a particularly powerful approach to realizing sensitive photodetection due to their efficient carrier separation. Recently, p-n-junction photodetectors based on organic-inorganic hybrid perovskites, which combine favorable optoelectronic performance with facile processability, hold great potential in practical applications. So far, these devices have generally been made of polycrystalline films, which exhibit poor carrier-transport efficiency, impeding the further improvement of their photoresponsivities. Here, a type of ultrasensitive photodetector based on single-crystalline perovskite p-n-junction nanowire arrays is demonstrated. The single-crystalline perovskite p-n-junction nanowire arrays not only possess high crystallinity that enables efficient carrier transport but also form a built-in electric field facilitating effective carrier separation. As a result, the devices show excellent photosensitivity over a wide spectral range from 405 to 635 nm with an outstanding responsivity of 2.65 × 10²  A W^-1 at 532 nm. These results will provide new insights into the design and construction of high-performance photodetectors for practical optoelectronic applications.

Real-Time Observation of Temperature-Induced Surface Nanofaceting in M-Plane α-Al2O3

The spontaneous crystal surface reconstruction of M-plane α-Al₂O₃ is employed for nanopatterning and nanofabrication in various fields of research including, among others, magnetism, superconductivity, and optoelectronics. In this reconstruction process the crystalline surface transforms from a planar morphology to one with a nanoscale ripple patterning. However, the high sample temperature required to induce surface reconstruction made in situ studies of the process seem unfeasible. The kinetics of ripple pattern formation therefore remained uncertain, and thus production of templates for nanofabrication could not advance beyond a trial-and-error stage. We present an approach combining in situ real-time grazing incidence small-angle X-ray scattering experiments (GISAXS) with model-based analysis and with ex situ atomic force microscopy (AFM) to observe this morphological transition in great detail. Our approach provides time-resolved information about all relevant morphological parameters required to trace the surface topography on the nanometer scale during reconstruction, i.e., the time dependence of the pattern wavelength, the ripple length, width, and height, and thus their facet angles. It offers a comprehensive picture of this process exemplified by a M-plane α-Al₂O₃ surface annealed at 1325 °C for 930 min. Fitting the model parameters to the experimental GISAXS data revealed a Johnson-Mehl-Avrami-Kolmogorov type of behavior for the pattern wavelength and a predominantly linear time dependence of the other parameters. In this case the reconstruction resulted in a crystalline surface fully patterned with asymmetric ripple-shaped nanostructures of 75 nm periodicity, 15 nm in height, and 630 nm in length. By elucidating the time dependence of these morphological parameters, this study shows a powerful way to significantly advance the predictability of annealing outcome and thus to efficiently customize nanopatterned α-Al₂O₃ templates for improved nanofabrication routines.

Holistic Determination of Optoelectronic Properties using High-Throughput Spectroscopy of Surface-Guided CsPbBr3 Nanowires

Optoelectronic micro- and nanostructures have a vast parameter space to explore for modification and optimization of their functional performance. This paper reports on a data-led approach using high-throughput single nanostructure spectroscopy to probe >8000 structures, allowing for holistic analysis of multiple material and optoelectronic parameters with statistical confidence. The methodology is applied to surface-guided CsPbBr3 nanowires, which have complex and interrelated geometric, structural, and electronic properties. Photoluminescence-based measurements, studying both the surface and embedded interfaces, exploits the natural inter nanowire geometric variation to show that increasing the nanowire width reduces the optical bandgap, increases the recombination rate in the nanowire bulk, and reduces the rate at the surface interface. A model of carrier recombination and diffusion ascribes these trends to carrier density and strain effects at the interfaces and self-consistently retrieves values for carrier mobility, trap densities, bandgap, diffusion length, and internal quantum efficiency. The model predicts parameter trends, such as the variation of internal quantum efficiency with width, which is confirmed by experimental verification. As this approach requires minimal a priori information, it is widely applicable to nano- and microscale materials.

A high-responsivity CsPbBr3 nanowire photodetector induced by CdS@CdxZn1-xS gradient-alloyed quantum dots

Benefitting from excellent thermal and moisture stability, inorganic halide perovskite materials have established themselves quickly as promising candidates for fabricating photoelectric devices. However, due to their high trap state density and rapid carrier recombination rate, the photoelectric conversion efficiencies of current inorganic halide perovskite materials are still lower than expected. Here, after systematic research on the optoelectronic properties of CsPbBr₃ nanowires (NWs) decorated with binary CdS quantum dots (QDs), CdS@ZnS core/shell QDs, and gradient-alloyed CdS@Cd_xZn_1-xS QDs, respectively, we proposed a facile method to improve the quantum efficiency of perovskite-based photodetectors with low cost, in which the aforementioned QDs are firstly integrated with CsPbBr₃ NWs, which act as a photosensitive layer. Notably, the responsivity of the CsPbBr₃ NW photodetector decorated with CdS@Cd_xZn_1-xS QDs was enhanced about 10-fold compared to that of pristine CsPbBr₃ NW devices. This value is far superior to those for hybrids composed of binary CdS QDs and CdS@ZnS core/shell QDs. The high responsivity enhancement phenomena are interpreted based on the unique funnel-shaped energy level of CdS@Cd_xZn_1-xS QDs, which is favorable for light-harvesting and photocarrier separation. This work indicates that our unique QD/NW hybrid nanostructure is a desirable building block for fabricating high-performance photodetectors.

Toward Continuous-Wave Pumped Metal Halide Perovskite Lasers: Strategies and Challenges

Reliable and efficient continuous-wave (CW) lasers have been intensively pursued in the field of optoelectronic integrated circuits. Metal perovskites have emerged as promising gain materials for solution-processed laser diodes. Recently, the performance of CW perovskite lasers has been improved with the optimization of material and device levels. Nevertheless, the realization of CW pumped perovskite lasers is still hampered by thermal runaway, unwanted parasitic species, and poor long-term stability. This review starts with the charge carrier recombination dynamics and fundamentals of CW lasing in perovskites. We examine the potential strategies that can be used to improve the performance of perovskite CW lasers from the materials to device levels. We also propose the open challenges and future opportunities in developing high-performance and stable CW pumped perovskite lasers.

Vertical Heterogeneous Integration of Metal Halide Perovskite Quantum-Wires/Nanowires for Flexible Narrowband Photodetectors

Charge collection narrowing (CCN) has been reported to be an efficient strategy to achieve optical filter-free narrowband photodetection (NPD) with metal halide perovskite (MHP) single crystals. However, the necessity of utilizing thick crystals in CCN limits their applications in large scale, flexible, self-driven, and high-performance optoelectronics. Here, for the first time, we fabricate vertically integrated MHP quantum wire/nanowire (QW/NW) array based photodetectors in nanoengineered porous alumina membranes (PAMs) showing self-driven broadband photodetection (BPD) and NPD capability simultaneously. Two cutoff detection edges of the NPDs are located at around 770 and 730 nm, with a full-width at half-maxima (fwhm) of around 40 nm. The optical bandgap difference between the NWs and the QWs, in conjunction with the high carrier recombination rate in QWs, contributes to the intriguing NPD performance. Thanks to the excellent mechanical flexibility of the PAMs, a flexible NPD is demonstrated with respectable performance. Our work here opens a new pathway to design and engineer a nanostructured MHP for novel color selective and full color sensing devices.

Free-Standing Metal Halide Perovskite Nanowire Arrays with Blue-Green Heterostructures

Vertically aligned metal halide perovskite (MHP) nanowires are promising for various optoelectronic applications, which can be further enhanced by heterostructures. However, present methods to obtain free-standing vertically aligned MHP nanowire arrays and heterostructures lack the scalability needed for applications. We use a low-temperature solution process to prepare free-standing vertically aligned green-emitting CsPbBr₃ nanowires from anodized aluminum oxide templates. The length is controlled from 1 to 20 μm by the precursor amount. The nanowires are single-crystalline and exhibit excellent photoluminescence, clear light guiding and high photoconductivity with a responsivity of 1.9 A/W. We demonstrate blue-green heterostructured nanowire arrays by converting the free-standing part of the nanowires to CsPbCl_1.1Br_1.9 in an anion exchange process. Our results demonstrate a scalable, self-aligned, and lithography-free approach to achieve high quality free-standing MHP nanowires arrays and heterostructures, offering new possibilities for optoelectronic applications.

Controlling the Phase Transition in CsPbI3 Nanowires

Cesium lead iodide (CsPbI₃) is a promising semiconductor with a suitable band gap for optoelectronic devices. CsPbI₃ has a metastable perovskite phase that undergoes a phase transition into an unfavorable nonperovskite phase in an ambient environment. This phase transition changes the optoelectronic properties of CsPbI₃ and hinders its potential for device applications. Therefore, it is of central importance to understand the kinetics of such instability and develop strategies to control and stabilize the perovskite phase. Here, we use ultralong CsPbI₃ nanowires as a model platform to investigate the phase transition kinetics. Our results depict the role of environmental stressors (moisture and temperature) in controlling the phase transition dynamics of CsPbI₃, which can serve as guiding principles for future phase transition studies and the design of related photovoltaics. Furthermore, we demonstrate the controllability of phase propagation on individual nanowires by varying the moisture level and temperature.

Suppressing Oxygen-Induced Deterioration of Metal Halide Perovskites by Alkaline Earth Metal Doping: A Quantum Dynamics Study

Exposure to oxygen undermines stability and charge transport in metal halide perovskites, because molecular oxygen, as well as photogenerated superoxide and peroxide, erodes the perovskite lattice and creates charge traps. We demonstrate that alkaline earth metals passivate the oxygen species in CH₃NH₃PbI₃ by breaking the O-O bond and forming new bonds with the oxygen atoms, shifting the trap states of the antibonding O-O orbitals from inside the bandgap into the bands. In addition to eliminating the oxidizing species and the charge traps, doping with the alkaline earth metals slightly increases the bandgap and partially localizes the electron and hole wavefunctions, weakening the electron-hole and charge-phonon interactions and making the charge carrier lifetimes longer than even those in pristine CH₃NH₃PbI₃. Relative to CH₃NH₃PbI₃ exposed to oxygen and light, the charge carrier lifetime of the passivated CH₃NH₃PbI₃ increases by 2-3 orders of magnitude. The ab initio quantum dynamics simulations demonstrate that alkaline earth metals passivate efficiently not only intrinsic perovskite defects, but also the foreign species, providing a viable strategy to suppress perovskite degradation.

Single-Crystalline Perovskite Nanowire Arrays for Stable X-ray Scintillators with Micrometer Spatial Resolution

X-ray scintillation detectors based on metal halide perovskites have shown excellent light yield, but they mostly target applications with spatial resolution at the tens of micrometers level. Here, we use a one-step solution method to grow arrays of 15-μm-long single-crystalline CsPbBr₃ nanowires (NWs) in an AAO (anodized aluminum oxide) membrane template, with nanowire diameters ranging from 30 to 360 nm. The CsPbBr₃ nanowires in AAO (CsPbBr₃ NW/AAO) show increasing X-ray scintillation efficiency with decreasing nanowire diameter, with a maximum photon yield of ∼5 300 ph/MeV at 30 nm diameter. The CsPbBr₃ NW/AAO composites also display high radiation resistance, with a scintillation-intensity decrease of only ∼20-30% after 24 h of X-ray exposure (integrated dose 162 Gy_air) and almost no change after ambient storage for 2 months. X-ray images can distinguish line pairs with a spacing of 2 μm for all nanowire diameters, while slanted edge measurements show a spatial resolution of ∼160 lp/mm at modulation transfer function (MTF) = 0.1. The combination of high spatial resolution, radiation stability, and easy fabrication makes these CsPbBr₃ NW/AAO scintillators a promising candidate for high-resolution X-ray imaging applications.

In situ construction of a Te/CsPbBr3 heterojunction for self-powered photodetector

In this study, CsPbBr3 particles were prepared by a simple solvent evaporation method in ambient environment; the p-n heterojunction formed by CsPbBr3 particles on the surface of a single long Te wire was used to construct a high-performance Te/CsPbBr3 photodetector. Compared with CsPbBr3 PDs, the Te/CsPbBr3 photodetector showed improved photocurrent, and exhibited characteristics of excellent self-powered performance, broad-spectrum response (UV-visible), and ultra-fast response speed (t rise = 0.09 ms). In addition, under zero bias and upon 540 nm light irradiation, the device had good responsivity (0.35 mA W-1), high photosensitivity (up to 100 on/off ratio), and a detectivity of 1.42 × 1010 Jones. This study provides insight into the possibility of manufacturing high-performance self-powered photodetectors through a simple in situ construction of heterojunctions.

Phase evolution of all-inorganic perovskite nanowires during its growth from quantum dots

All-inorganic lead-halide perovskites have emerged as an exciting material owing to their excellent optoelectronic properties and high stability over hybrid organometallic perovskites. Nanowires of these materials, in particular, have shown great promise for optoelectronic applications due to their high optical absorption coefficient and low defect state density. However, the synthesis of the most promising alpha-Cesium lead iodide (α-CsPbI₃) nanowires is challenging as it is metastable and spontaneously converts to a non-perovskiteδ-phase. The hot-injection method is one of the most facile, well-controlled, and commonly used approaches for synthesizing CsPbX₃nanostructures. But the exact mechanism of growing these nanowires in this technique is not clear. Here, we show that the hot-injection method produces photoactive phases of quantum dots (QDs) and nanowires of CsPbBr_3,and QDs of CsPbI₃, but CsPbI₃nanowires are grown in their non-perovskiteδ-phase. Monitoring the nanowire growth during the hot-injection technique and through detailed characterization, we establish that CsPbI₃nanowires are formed in the non-perovskite phase from the beginning rather than transforming after its growth from perovskite to a non-perovskite phase. We have discussed a possible mechanism of how non-perovskite nanowires of CsPbI₃grow at the expense of photoactive perovskite QDs. Our findings will help to synthesize nanostructures of all-inorganic perovskites with desired phases, which is essential for successful technological applications.

Chiral Hybrid Perovskite Single-Crystal Nanowire Arrays for High-Performance Circularly Polarized Light Detection

Circularly polarized light (CPL) detection has emerged as a key technology for various optoelectronics. Chiral hybrid perovskites (CHPs) that combine CPL-sensitive absorption induced by chiral organic ligands and superior photoelectric properties of perovskites are promising candidates for direct CPL detection. To date, most of the CHP detectors are made up of polycrystalline thin-film, which results in a rather limited discrimination of CPL due to the existence of redundant impurities and intrinsic defect states originating from rapid crystallization process. Here, it is developed a direct CPL detector with high photocurrent and polarization selectivity based on low-defect CHP single-crystal nanowire arrays. Large-scale CHP nanowires are obtained through a micropillar template-assisted capillary-bridge rise approach. Thanks to the high crystallinity and ordered crystallographic alignment of these arrays, a CPL photodetector with high light on/off ratio of 1.8 × 104 , excellent responsivity of 1.4 A W-1 , and an outstanding anisotropy factor of 0.24 for photocurrent has been achieved. These results would provide useful enlightenment for direct CPL detection in high-performance chiral optoelectronics.

High-performance perovskite photodetectors based on CsPbBr3 microwire arrays

All inorganic perovskite materials have drawn extensive attention, owing to their outstanding performance, facile solution-processed method, and potential applications in optoelectronic devices. However, uncontrollable morphology, high defect density, and instability of perovskites prepared via solution-processed method are the main challenges for their large-scale production and commercialization. Herein, we prepared large-scale CsPbBr₃ microwire arrays with highly ordered morphology and high crystalline quality by a template-assisted method. The photodetectors based on CsPbBr₃ microwire arrays exhibited remarkable on/off photocurrent ratio of 9.02×10³, high detectivity of 1.59×10¹³ Jones, high responsivity of 4.55 A/W, and fast response speed of 4.9/3 ms. More importantly, the photocurrent of the photodetectors hardly changed in air after being stored for two months, indicating remarkable stability. This study demonstrates that CsPbBr₃ microwire arrays provide the possibility for preparing large-scale and high-performance optoelectronic devices.

Micro-patterned photoalignment of CsPbBr3 nanowires with liquid crystal molecule composite film for polarized emission

Photoalignment technology provides high potential for the manipulation of molecular orientations and has been widely used in liquid crystal displays. In this work, we align a luminescent film composite of CsPbBr₃ nanowires (NWs) and liquid crystal molecules through photoalignment conducted on a PDMS template. We successfully define different orientations of CsPbBr₃ NWs on the same substrate and the fluorescence micrographs clearly exhibit the orthogonal polarization direction of the two regions. On the basis of this research, we develop micro-photoalignment technology, which is promising for fabricating complex and precise nanostructures for photonic applications.

Photodetectors with High Responsivity by Thickness Tunable Mixed Halide Perovskite Nanosheets

Chemical transformation of typically "nonlayered" phases into two-dimensional structures remains a formidable task. Among the thickness tunable CsPbX₃ (X = Br, Br/I, I) nanosheets (NSs), CsPbBr_1.5I_1.5 NSs with a thickness of ∼4.9 nm have structural stability superior to ∼6.8 nm CsPbI₃ NSs and better hole mobility than ∼3.7 nm CsPbBr₃ NSs. Moving beyond the much-explored CsPbBr₃ photodetectors, we demonstrate a sharp improvement of the photodetection of CsPbBr_1.5I_1.5 NS devices by thickening the NSs to ∼6.1 nm through combining 8-carbon and 18-carbon ligand surfactants. Thereby, the responsivity increases up to one of the highest values of 3313 A W^-1 at 1.5 V (and 3946 A W^-1 at 2 V) with detectivity of 1.6 × 10¹¹ Jones at 1.5 V, due to the increase in carrier mobility up to 7.9 × 10^-4 cm² V^-1 s^-1. The better device performance of the NSs than 8.6-13.9 nm nanocubes (NCs) is due to their planarity which facilitates in-plane mobilization of the charge carriers.

Robust Ultralong Lead Halide Perovskite Microwire Lasers

Hybrid organic-inorganic lead halide perovskite microwires are potential building blocks for realizing on-chip integrated optoelectronic devices. However, the length-controllable synthesis of one-dimensional hybrid perovskite microwires has been rarely reported, especially the ones with lengths in the millimeter scale. Herein, methylammonium lead bromide (MAPbBr₃) and formamidinium lead bromide (FAPbBr₃) micro and milliwires are demonstrated using single-crystal PbBr₂ microwires synthesized via template-free solution-phase growth as the lattice framework. Following the PbBr₂ template, the as-converted perovskite microwires possess controllable lengths ranging from tens to thousands of micrometers. In addition, Fabry-Perot (FP) lasing was realized in both MAPbBr₃ and FAPbBr₃ microwires, attesting to their excellent crystal quality and the efficient optical confinement of the natural cavity. These unique properties result in the first demonstration of FP perovskite microwire lasers with submillimeter lengths. More interestingly, the microwire lasers show excellent photostability under repetitive pulsed laser excitation for over 8 × 10⁶ cycles. Such findings demonstrate that the solution-converted hybrid lead bromide microwires have excellent optoelectronic performances promising for practical applications, and the size controllability indicates that this novel fabrication process may be feasible for large-scale industrial production.

Two-Step Chemical Vapor Deposition-Synthesized Lead-Free All-Inorganic Cs3Sb2Br9 Perovskite Microplates for Optoelectronic Applications

Lead-based halide perovskites (APbX₃, where A = organic or inorganic cation, X = Cl, Br, I) are suitable materials for many optoelectronic devices due to their many attractive properties. However, the concern of lead toxicity and the poor ambient and operational stability of the organic cation group greatly limit their practical utilization. Therefore, there has recently been great interest in lead-free, environment-friendly all-inorganic halide perovskites (IHPs). Sb and Sn are common species suggested to replace Pb for Pb-free IHPs. However, the large difference in the melting points of the precursor materials (e.g., CsBr and SbBr₃ precursors for Cs₃Sb₂Br₉) makes the chemical vapor deposition (CVD) growth of high-quality Pb-free IHPs a very challenging task. In this work, we developed a two-step CVD method to overcome this challenge and successfully synthesized Pb-free Cs₃Sb₂Br₉ perovskite microplates. Cs₃Sb₂Br₉ microplates ∼25 μm in size with the exciton absorption peak at ∼2.8 eV and a band gap of ∼2.85 eV were obtained. The microplates have a smooth hexagonal morphology and show a large Stokes shift of ∼450 meV and exciton binding energy of ∼200 meV. To demonstrate the applications of these microplates in optoelectronics, simple photoconductive devices were fabricated. These photodetectors exhibit a current on/off ratio of 2.36 × 10², a responsivity of 36.9 mA/W, and a detectivity of 1.0 × 10¹⁰ Jones with a fast response of rise and decay time of 61.5 and 24 ms, respectively, upon 450 nm photon irradiation. Finally, the Cs₃Sb₂Br₉ microplates also show good stability in ambient air without encapsulation. These results demonstrate that the 2-step CVD process is an effective approach to synthesize high-quality all-inorganic lead-free Cs₃Sb₂Br₉ perovskite microplates that have the potential for future high-performance optoelectronic device applications.

State of the Art and Prospects for Halide Perovskite Nanocrystals

Metal-halide perovskites have rapidly emerged as one of the most promising materials of the 21st century, with many exciting properties and great potential for a broad range of applications, from photovoltaics to optoelectronics and photocatalysis. The ease with which metal-halide perovskites can be synthesized in the form of brightly luminescent colloidal nanocrystals, as well as their tunable and intriguing optical and electronic properties, has attracted researchers from different disciplines of science and technology. In the last few years, there has been a significant progress in the shape-controlled synthesis of perovskite nanocrystals and understanding of their properties and applications. In this comprehensive review, researchers having expertise in different fields (chemistry, physics, and device engineering) of metal-halide perovskite nanocrystals have joined together to provide a state of the art overview and future prospects of metal-halide perovskite nanocrystal research.

Oriented Halide Perovskite Nanostructures and Thin Films for Optoelectronics

Oriented semiconductor nanostructures and thin films exhibit many advantageous properties, such as directional exciton transport, efficient charge transfer and separation, and optical anisotropy, and hence these nanostructures are highly promising for use in optoelectronics and photonics. The controlled growth of these structures can facilitate device integration to improve optoelectronic performance and benefit in-depth fundamental studies of the physical properties of these materials. Halide perovskites have emerged as a new family of promising and cost-effective semiconductor materials for next-generation high-power conversion efficiency photovoltaics and for versatile high-performance optoelectronics, such as light-emitting diodes, lasers, photodetectors, and high-energy radiation imaging and detectors. In this Review, we summarize the advances in the fabrication of halide perovskite nanostructures and thin films with controlled dimensionality and crystallographic orientation, along with their applications and performance characteristics in optoelectronics. We examine the growth methods, mechanisms, and fabrication strategies for several technologically relevant structures, including nanowires, nanoplates, nanostructure arrays, single-crystal thin films, and highly oriented thin films. We highlight and discuss the advantageous photophysical properties and remarkable performance characteristics of oriented nanostructures and thin films for optoelectronics. Finally, we survey the remaining challenges and provide a perspective regarding the opportunities for further progress in this field.

Ultrastable Lead-Free CsAgCl2 Perovskite Microcrystals for Photocatalytic CO2 Reduction

Nowadays, there is much attention focusing on lead halide perovskite because of its admirable performances in optoelectronic applications. However, the notorious toxicity and long-term instability are two main factors limiting its widespread applications. The findings of this work demonstrate a facile synthesis process for novel lead-free CsAgCl₂ perovskite microcrystals with no organic ligand involved. The fundamental properties of the CsAgCl₂ microcrystals are revealed by applying temperature-dependent X-ray diffraction and photoluminescence measurements from 77 to 300 K. Furthermore, the CsAgCl₂ microcrystals exhibit excellent air (60 days), thermal (100 °C), and light stability. Meanwhile, the CsAgCl₂ microcrystals have shown exciting potential applications in the fields of photocatalysis and photoelectrochemistry.

Ultrathin and Conformable Lead Halide Perovskite Photodetector Arrays for Potential Application in Retina-Like Vision Sensing

Solution-processed lead halide perovskites are considered one of the promising materials for flexible optoelectronics. However, the array integration of ultrathin flexible perovskite photodetectors (PDs) remains a significant challenge limited by the incompatibility of perovskite materials with manufacturing techniques involving polar liquids. Here, an ultrathin (2.4 µm) and conformable perovskite-based PD array (10 × 10 pixels) with ultralight weight (3.12 g m^-2 ) and excellent flexibility, is reported. Patterned all-inorganic CsPbBr₃ perovskite films with precise pixel position, controllable morphology, and homogenous dimension, are synthesized by a vacuum-assisted drop-casting patterning process as the active layer. The use of waterproof parylene-C film as substrate and encapsulation layer effectively protects the perovskite films against penetration of polar liquids during the peeling-off process. Benefitting from the encapsulation and ultrathin property, the device exhibits long-term stability in the ambient environment, and robust mechanical stability under bending or 50% compressive strain. More importantly, the ultrathin flexible PD arrays conforming to hemispherical support realize imaging of light distribution, indicating the potential applications in retina-like vision sensing.

Low-Dimensional Metal Halide Perovskite Photodetectors

Metal halide perovskites (MHPs) have been a hot research topic due to their facile synthesis, excellent optical and optoelectronic properties, and record-breaking efficiency of corresponding optoelectronic devices. Nowadays, the development of miniaturized high-performance photodetectors (PDs) has been fueling the demand for novel photoactive materials, among which low-dimensional MHPs have attracted burgeoning research interest. In this report, the synthesis, properties, photodetection performance, and stability of low-dimensional MHPs, including 0D, 1D, 2D layered and nonlayered nanostructures, as well as their heterostructures are reviewed. Recent advances in the synthesis approaches of low-dimensional MHPs are summarized and the key concepts for understanding the optical and optoelectronic properties related to the PD applications of low-dimensional MHPs are introduced. More importantly, recent progress in novel PDs based on low-dimensional MHPs is presented, and strategies for improving the performance and stability of perovskite PDs are highlighted. By discussing recent advances, strategies, and existing challenges, this progress report provides perspectives on low-dimensional MHP-based PDs in the future.

Green solvent assisted preparation of one-dimensional CsPbBr3 nanocrystals with a controllable morphology for cyan-emitting applications

Upon tuning the polarity of antisolvent medium, the length of CsPbBr3 NCs realizing the conversion from nanorods to NWs. Furthermore, the width of the NWs can be adjusted feasibly via the overgrowth of CsPbBr3 NWs.

Emerging Light-Emitting Materials for Photonic Integration

The arrival of the information explosion era is urging the development of large-bandwidth high-data-rate optical interconnection technology. Up to now, the biggest stumbling block in optical interconnections has been the lack of efficient light sources despite significant progress that has been made in germanium-on-silicon (Ge-on-Si) and III-V-on-silicon (III-V-on-Si) lasers. 2D materials and metal halide perovskites have attracted much attention in recent years, and exhibit distinctive advantages in the application of on-chip light emitters. Herein, this Progress Report reviews the recent progress made in light-emitting materials with a focus on new materials, i.e., 2D materials and metal halide perovskites. The report briefly introduces the current status of Ge-on-Si and III-V-on-Si lasers and discusses the advances of 2D and perovskite light-emitting materials for photonic integration, including their optical properties, preparation methods, as well as the light sources based on these materials. Finally, challenges and perspectives of these emerging materials on the way to the efficient light sources are discussed.

Large-Scale Thin CsPbBr3 Single-Crystal Film Grown on Sapphire via Chemical Vapor Deposition: Toward Laser Array Application

Single-crystal perovskites with excellent photophysical properties are considered to be ideal materials for optoelectronic devices, such as lasers, light-emitting diodes and photodetectors. However, the growth of large-scale perovskite single-crystal films (SCFs) with high optical gain by vapor-phase epitaxy remains challenging. Herein, we demonstrated a facile method to fabricate large-scale thin CsPbBr₃ SCFs (∼300 nm) on the c-plane sapphire substrate. High temperature is found to be the key parameter to control low reactant concentration and sufficient surface diffusion length for the growth of continuous CsPbBr₃ SCFs. Through the comprehensive study of the carrier dynamics, we clarify that the trapped-related exciton recombination has the main effect under low carrier density, while the recombination of excitons and free carriers coexist until free carriers plays the dominate role with increasing carrier density. Furthermore, an extremely low-threshold (∼8 μJ cm^-2) amplified spontaneous emission was achieved at room temperature due to the high optical gain up to 1255 cm^-1 at a pump power of 20 times threshold (∼20 P_th). A microdisk array was prepared using a focused ion beam etching method, and a single-mode laser was achieved on a 3 μm diameter disk with the threshold of 1.6 μJ cm^-2. Our experimental results not only present a versatile method to fabricate large-scale SCFs of CsPbBr₃ but also supply an arena to boost the optoelectronic applications of CsPbBr₃ with high performance.