1
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Ran Y, Zhao R, Meng C, Shang N, Sun S, Liu K, Zhu H. Non-Steady-State Symmetry Breaking Growth of Multilayered SnSe 2 Nanoplates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304511. [PMID: 37715079 DOI: 10.1002/smll.202304511] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2023] [Revised: 08/29/2023] [Indexed: 09/17/2023]
Abstract
The use of non-equilibrium growth modes with non-steady dynamics is extensively explored in bulk materials such as amorphous and polycrystalline materials. Yet, research into the non-steady-state (NSS) growth of two-dimensional (2D) materials is still in its infancy. In this study, multilayered tin selenide (SnSe2 ) nanoplates are grown by chemical vapor deposition under NSS conditions (modulating carrier gas flow and temperature). Given the facile diffusion and inherent instability of SnSe2 , it proves to be an apt candidate for nucleation and growth in NSS scenarios. This leads to the emergence of SnSe2 nanoplates with distinct features (self-growth twisting, symmetry transformation, interlayer decoupling, homojunction, and large-area 2D domain), exhibiting pronounced second harmonic generation. The authors' findings shed light on the growth dynamics of 2D materials, broadening their potential applications in various fields.
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Affiliation(s)
- Yutong Ran
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Runni Zhao
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Chen Meng
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Nianze Shang
- State Key Lab for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
| | - Shuo Sun
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Kaihui Liu
- State Key Lab for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
| | - Hongwei Zhu
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
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2
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Li S, Ouyang D, Zhang N, Zhang Y, Murthy A, Li Y, Liu S, Zhai T. Substrate Engineering for Chemical Vapor Deposition Growth of Large-Scale 2D Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211855. [PMID: 37095721 DOI: 10.1002/adma.202211855] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2022] [Revised: 04/17/2023] [Indexed: 05/03/2023]
Abstract
The large-scale production of 2D transition metal dichalcogenides (TMDs) is essential to realize their industrial applications. Chemical vapor deposition (CVD) has been considered as a promising method for the controlled growth of high-quality and large-scale 2D TMDs. During a CVD process, the substrate plays a crucial role in anchoring the source materials, promoting the nucleation and stimulating the epitaxial growth. It thus significantly affects the thickness, microstructure, and crystal quality of the products, which are particularly important for obtaining 2D TMDs with expected morphology and size. Here, an insightful review is provided by focusing on the recent development associated with the substrate engineering strategies for CVD preparation of large-scale 2D TMDs. First, the interaction between 2D TMDs and substrates, a key factor for the growth of high-quality materials, is systematically discussed by combining the latest theoretical calculations. Based on this, the effect of various substrate engineering approaches on the growth of large-area 2D TMDs is summarized in detail. Finally, the opportunities and challenges of substrate engineering for the future development of 2D TMDs are discussed. This review might provide deep insight into the controllable growth of high-quality 2D TMDs toward their industrial-scale practical applications.
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Affiliation(s)
- Shaohua Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Decai Ouyang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Na Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yi Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Akshay Murthy
- Superconducting Quantum Materials and Systems Division, Fermi National Accelerator Laboratory (FNAL), Batavia, IL, 60510, USA
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, 518057, P. R. China
| | - Shiyuan Liu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, 518057, P. R. China
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3
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Seravalli L, Esposito F, Bosi M, Aversa L, Trevisi G, Verucchi R, Lazzarini L, Rossi F, Fabbri F. Built-in tensile strain dependence on the lateral size of monolayer MoS 2 synthesized by liquid precursor chemical vapor deposition. NANOSCALE 2023; 15:14669-14678. [PMID: 37624579 DOI: 10.1039/d3nr01687k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/26/2023]
Abstract
Strain engineering is an efficient tool to tune and tailor the electrical and optical properties of 2D materials. The built-in strain can be tuned during the synthesis process of a two-dimensional semiconductor, such as molybdenum disulfide, by employing different growth substrates with peculiar thermal properties. In this work, we demonstrate that the built-in strain of MoS2 monolayers, grown on a SiO2/Si substrate by liquid precursor chemical vapor deposition, is mainly dependent on the size of the monolayer. In fact, we identify a critical size equal to 20 μm, from which the built-in strain increases drastically. The built-in strain is the maximum for a 60 μm sized monolayer, leading to 1.2% tensile strain with a partial release of strain close to the monolayer triangular vertexes due to the formation of nanocracks. These findings also imply that the standard method for evaluation of the number of layers based on the Raman mode separation can become unreliable for highly strained monolayers with a lateral size above 20 μm.
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Affiliation(s)
- L Seravalli
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), Parco Area delle Scienze 37/a, 43124 Parma, Italy
| | - F Esposito
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), Parco Area delle Scienze 37/a, 43124 Parma, Italy
- Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma, Italy
| | - M Bosi
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), Parco Area delle Scienze 37/a, 43124 Parma, Italy
| | - L Aversa
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), FBK Trento unit, Via alla Cascata 56/C, 38123 Povo, Trento, Italy
| | - G Trevisi
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), Parco Area delle Scienze 37/a, 43124 Parma, Italy
| | - R Verucchi
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), FBK Trento unit, Via alla Cascata 56/C, 38123 Povo, Trento, Italy
| | - L Lazzarini
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), Parco Area delle Scienze 37/a, 43124 Parma, Italy
| | - F Rossi
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), Parco Area delle Scienze 37/a, 43124 Parma, Italy
| | - F Fabbri
- NEST, Istituto Nanoscienze - CNR, Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy.
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4
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Guo Z, Liu J, Han X, Ma F, Rong D, Du J, Yang Y, Wang T, Li G, Huang Y, Xing J. High-Performance Artificial Synapse Based on CVD-Grown WSe 2 Flakes with Intrinsic Defects. ACS APPLIED MATERIALS & INTERFACES 2023; 15:19152-19162. [PMID: 37022796 DOI: 10.1021/acsami.3c00417] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
High-performance artificial synaptic devices with rich functions are highly desired for the development of an advanced brain-like neuromorphic system. Here, we prepare synaptic devices based on a CVD-grown WSe2 flake, which has an unusual morphology of nested triangles. The WSe2 transistor exhibits robust synaptic behaviors such as excitatory postsynaptic current, paired-pulse facilitation, short-time plasticity, and long-time plasticity. Furthermore, due to its high sensitivity to light illumination, the WSe2 transistor exhibits excellent light-dosage-dependent and light wavelength-dependent plasticity, which endow the synaptic device with more intelligent learning and memory functions. In addition, WSe2 optoelectronic synapses can mimic "learning experience" behavior and associative learning behavior like the brain. An artificial neural network is simulated for pattern recognition of hand-written digital images in the MNIST data set and the best recognition accuracy could reach 92.9% based on weight updating training of our WSe2 device. Detailed surface potential analysis and PL characterization reveal that the intrinsic defects generated in growth are dominantly responsible for the controllable synaptic plasticity. Our work suggests that the CVD-grown WSe2 flake with intrinsic defects capable of robust trapping/de-trapping charges holds great application prospects in future high-performance neuromorphic computation.
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Affiliation(s)
- Zihao Guo
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Jinhui Liu
- Shenyuan Honor College of Beihang University, Beijing 100191, China
| | - Xu Han
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Fangyuan Ma
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Dongke Rong
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Jianyu Du
- School of Science, Tianjin University of Technology, Tianjin 300000, China
| | - Yehua Yang
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Tianlin Wang
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Gengwei Li
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Yuan Huang
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Jie Xing
- School of Science, China University of Geosciences, Beijing 100083, China
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5
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Huang Z, Deng W, Zhang Z, Zhao B, Zhang H, Wang D, Li B, Liu M, Huangfu Y, Duan X. Terminal Atom-Controlled Etching of 2D-TMDs. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211252. [PMID: 36740628 DOI: 10.1002/adma.202211252] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2022] [Revised: 01/19/2023] [Indexed: 05/17/2023]
Abstract
The controlled etching of 2D transition metal dichalcogenides (2D-TMDs) is critical to understanding the growth mechanisms of 2D materials and patterning 2D materials but remains a major comprehensive challenge. Here, a rational strategy to control the terminal atoms of 2D-TMDs etched holes is reported. Using laser irradiation combined with an improved anisotropic thermal etching process under a determined atmosphere, terminal atom-controlled etched hole arrays are created on 2D-TMDs. By adjusting the gas atmosphere during the thermal etching stage, triangular etched hole arrays terminated by the tungsten zigzag (W-ZZ) edge (in an Ar/H2 atmosphere), hexagonal etched hole arrays terminated alternately by the W-ZZ edge and sulfur (selenium) zigzag (S-ZZ or Se-ZZ) edge (in a pure Ar atmosphere), and triangular etched hole arrays terminated by the S-ZZ (Se-ZZ) edge (in an Ar/sulfur [selenium] vapor atmosphere) can be obtained. Density functional theory reveals the forming energy of different edges and the different activities of metal atoms and chalcogenide atoms under different atmospheres, which determine the terminal atoms of the holes. This work may enhance the understanding of the etching and growth of 2D-TMDs. The 2D-TMDs hole arrays constructed by this work may have important applications in catalysis, nonlinear optics, spintronics, and large-scale integrated circuits.
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Affiliation(s)
- Ziwei Huang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Wei Deng
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Zhengwei Zhang
- Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Bei Zhao
- School of Physics and Key Laboratory of MEMS of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Hongmei Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Di Wang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Bailing Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Miaomiao Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Ying Huangfu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
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6
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Aditya A, Mishra A, Baradwaj N, Nomura KI, Nakano A, Vashishta P, Kalia RK. Wrinkles, Ridges, Miura-Ori, and Moiré Patterns in MoSe 2 Using Neural Networks. J Phys Chem Lett 2023; 14:1732-1739. [PMID: 36757778 PMCID: PMC9940294 DOI: 10.1021/acs.jpclett.2c03539] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/20/2022] [Accepted: 01/19/2023] [Indexed: 06/18/2023]
Abstract
Effects of lateral compression on out-of-plane deformation of two-dimensional MoSe2 layers are investigated. A MoSe2 monolayer develops periodic wrinkles under uniaxial compression and Miura-Ori patterns under biaxial compression. When a flat MoSe2 monolayer is placed on top of a wrinkled MoSe2 layer, the van der Waals (vdW) interaction transforms wrinkles into ridges and generates mixed 2H and 1T phases and chain-like defects. Under a biaxial strain, the vdW interaction induces regions of Miura-Ori patterns in bilayers. Strained systems analyzed using a convolutional neural network show that the compressed system consists of semiconducting 2H and metallic 1T phases. The energetics, mechanical response, defect structure, and dynamics are analyzed as bilayers undergo wrinkle-ridge transformations under uniaxial compression and moiré transformations under biaxial compression. Our results indicate that in-plane compression can induce self-assembly of out-of-plane metasurfaces with controllable semiconducting and metallic phases and moiré patterns with unique optoelectronic properties.
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7
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Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
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Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
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8
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Zhao Y, Kong X, Shearer MJ, Ding F, Jin S. Chemical Etching of Screw Dislocated Transition Metal Dichalcogenides. NANO LETTERS 2021; 21:7815-7822. [PMID: 34491064 DOI: 10.1021/acs.nanolett.1c02799] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Chemical etching can create novel structures inaccessible by growth and provide complementary understanding on the growth mechanisms of complex nanostructures. Screw dislocation-driven growth influences the layer stackings of transition metal dichalcogenides (MX2) resulting in complex spiral morphologies. Herein, we experimentally and theoretically study the etching of screw dislocated WS2 and WSe2 nanostructures using H2O2 etchant. The kinetic Wulff constructions and Monte Carlo simulations establish the etching principles of single MX2 layers. Atomic force microscopy characterization reveals diverse etching morphology evolution behaviors around the dislocation cores and along the exterior edges, including triangular, hexagonal, or truncated hexagonal holes and smooth or rough edges. These behaviors are influenced by the edge orientations, layer stackings, and the strain of screw dislocations. Ab initio calculation and kinetic Monte Carlo simulations support the experimental observations and provide further mechanistic insights. This knowledge can help one to understand more complex structures created by screw dislocations through etching.
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Affiliation(s)
- Yuzhou Zhao
- Department of Chemistry, University of Wisconsin-Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States
| | - Xiao Kong
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, Korea
| | - Melinda J Shearer
- Department of Chemistry, University of Wisconsin-Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | - Song Jin
- Department of Chemistry, University of Wisconsin-Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States
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9
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Chen S, Chen J, Zhang X, Li ZY, Li J. Kirigami/origami: unfolding the new regime of advanced 3D microfabrication/nanofabrication with "folding". LIGHT, SCIENCE & APPLICATIONS 2020; 9:75. [PMID: 32377337 PMCID: PMC7193558 DOI: 10.1038/s41377-020-0309-9] [Citation(s) in RCA: 48] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2019] [Revised: 02/27/2020] [Accepted: 04/02/2020] [Indexed: 05/19/2023]
Abstract
Advanced kirigami/origami provides an automated technique for modulating the mechanical, electrical, magnetic and optical properties of existing materials, with remarkable flexibility, diversity, functionality, generality, and reconfigurability. In this paper, we review the latest progress in kirigami/origami on the microscale/nanoscale as a new platform for advanced 3D microfabrication/nanofabrication. Various stimuli of kirigami/origami, including capillary forces, residual stress, mechanical stress, responsive forces, and focussed-ion-beam irradiation-induced stress, are introduced in the microscale/nanoscale region. These stimuli enable direct 2D-to-3D transformations through folding, bending, and twisting of microstructures/nanostructures, with which the occupied spatial volume can vary by several orders of magnitude compared to the 2D precursors. As an instant and direct method, ion-beam irradiation-based tree-type and close-loop nano-kirigami is highlighted in particular. The progress in microscale/nanoscale kirigami/origami for reshaping the emerging 2D materials, as well as the potential for biological, optical and reconfigurable applications, is briefly discussed. With the unprecedented physical characteristics and applicable functionalities generated by kirigami/origami, a wide range of applications in the fields of optics, physics, biology, chemistry and engineering can be envisioned.
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Affiliation(s)
- Shanshan Chen
- 1Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology, 100081 Beijing, China
| | - Jianfeng Chen
- 2College of Physics and Optoelectronics, South China University of Technology, 510640 Guangzhou, China
| | - Xiangdong Zhang
- 1Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology, 100081 Beijing, China
| | - Zhi-Yuan Li
- 2College of Physics and Optoelectronics, South China University of Technology, 510640 Guangzhou, China
| | - Jiafang Li
- 1Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology, 100081 Beijing, China
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10
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Zhang P, Cheng N, Li M, Zhou B, Bian C, Wei Y, Wang X, Jiang H, Bao L, Lin Y, Hu Z, Du Y, Gong Y. Transition-Metal Substitution-Induced Lattice Strain and Electrical Polarity Reversal in Monolayer WS 2. ACS APPLIED MATERIALS & INTERFACES 2020; 12:18650-18659. [PMID: 32237720 DOI: 10.1021/acsami.9b22004] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The physical and chemical properties of transition metal dichalcogenides can be effectively tuned by doping or alloying, which is essential for their practical applications. However, the microstructure evolutions and their effects on the physical properties induced by alloying from hetero-atoms with different outermost electronic structures are still unclear. Here, we synthesized Nb-substituted WS2 with various Nb concentrations showing unusual changes of optical behaviors and continuous electrical polarity reversal. The fully softened Raman mode, rapidly quenched photoluminescence, and severe electron scattering can be attributed to the combined effects of charge doping and lattice strain caused by atomic Nb doping. Three types of substitution modes of Nb atoms in the WS2 lattice were observed directly from atomic-resolution scanning transmission electron microscopy. Density functional theory calculations further confirm the role of lattice strain in the evolutions of optical and electrical characteristics. With increasing Nb concentration, n-type, ambipolar, and p-type field-effect transistors can be achieved, indicating the capacity of this doping method to engineer the properties of two-dimensional materials for future electronic applications.
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Affiliation(s)
- Peng Zhang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China
| | - Ningyan Cheng
- Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovation Materials (AIIM), University of Wollongong, Wollongong, New South Wales 2522, Australia
| | - Mengjiao Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Bin Zhou
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Ce Bian
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Yi Wei
- School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China
| | - Xingguo Wang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China
| | - Huaning Jiang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China
| | - Lihong Bao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523803, P. R. China
| | - Yenfu Lin
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Yi Du
- Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovation Materials (AIIM), University of Wollongong, Wollongong, New South Wales 2522, Australia
- Beihang-UOW Joint Research Centre and School of Physics, Beihang University, Beijing 100191, China
| | - Yongji Gong
- School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China
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11
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Fang L, Yuan X, Liu K, Li L, Zhou P, Ma W, Huang H, He J, Tao S. Direct bilayer growth: a new growth principle for a novel WSe 2 homo-junction and bilayer WSe 2 growth. NANOSCALE 2020; 12:3715-3722. [PMID: 31993600 DOI: 10.1039/c9nr09874g] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Homo-junction and multi-layer structures of transition metal chalcogenide (TMD) materials provide great flexibility for band-structure engineering and designing photoelectric devices. However, the knowledge of van der Waals epitaxy growth limits the development of these heterostructures. Herein, we employed the chemical vapor deposition (CVD) growth strategy to synthesize novel WSe2 homo-junction samples with a triangular monolayer in the center and three AA stacking bilayer flakes connected to the vertexes of the monolayer. The emitted photon energy from the bilayer near the junction showed a blueshift in energy of up to 24 meV compared with bare bilayer WSe2, confirming the charge transfer effect from monolayer to bilayer WSe2. Further growth studies revealed the shape evolution from WSe2 homo-junction to bilayer. The whole homo-junction formation and evolution process cannot be explained by the traditional layer-by-layer growth mechanism. Instead, a direct bilayer growth approach is proposed to explain the bilayer formation and evolution at the vertexes of the bottom layer of WSe2. These findings suggest that the growth of bilayer TMDs is more complex than our previous understanding. This work presents deepens insight into van der Waals epitaxy growth, and thus is valuable for guiding the fabrication of novel homo-junctions for both fundamental science and optoelectronic applications.
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Affiliation(s)
- Long Fang
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
| | - Xiaoming Yuan
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
| | - Kunwu Liu
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
| | - Lin Li
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
| | - Peng Zhou
- Hunan Provincial Key Defense Laboratory of High Temperature Wear-Resisting Materials and Preparation Technology, Hunan University of Science and Technology, Xiangtan, Hunan 411201, China
| | - Wei Ma
- Engineering Research Center of Advanced Functional Material Manufacturing of Ministry of Education, School of Chemical Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Han Huang
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
| | - Jun He
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
| | - Shaohua Tao
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
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12
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Wang X, Yang H, Zheng J, Li Y, Peng X, Qiao L, Wang Z, Wang Q, Han J, Xiao W. Controllable growth of transition metal dichalcogenide multilayer flakes with kirigami structures. CrystEngComm 2020. [DOI: 10.1039/c9ce01838g] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2023]
Abstract
2D TMDCs with triangular-shaped and hexagonal-shaped kirigami structures are grown on amorphous SiO2 substrates by chemical vapor deposition (CVD).
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13
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Yu Z, Yuan L, Wei Y, Li H, Meng X, Li Y, Endres F. In situ Ga-alloying in germanium nano-twists by the inhibition of fractal growth with fast Li +-mobility. Chem Commun (Camb) 2019; 55:10412-10415. [PMID: 31403632 DOI: 10.1039/c9cc04408f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In this study, Ge0.90Ga0.10 nano-twists were prepared by an in situ Ga-alloying method to inhibit the fractal growth of Ge. The mobility of Li+ in the Ge0.90Ga0.10 nano-twists was two orders higher than that in Ge. This advantage promotes fast charging of Li-ion batteries with the rate capability of 819 mA h g-1 at 16 A g-1.
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Affiliation(s)
- Zhaoliang Yu
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun, P. R. China.
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14
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Fang L, Chen H, Yuan X, Huang H, Chen G, Li L, Ding J, He J, Tao S. Quick Optical Identification of the Defect Formation in Monolayer WSe 2 for Growth Optimization. NANOSCALE RESEARCH LETTERS 2019; 14:274. [PMID: 31414230 PMCID: PMC6692796 DOI: 10.1186/s11671-019-3110-z] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2019] [Accepted: 07/29/2019] [Indexed: 05/25/2023]
Abstract
Bottom-up epitaxy has been widely applied for transition metal dichalcogenides (TMDCs) growth. However, this method usually leads to a high density of defects in the crystal, which limits its optoelectronic performance. Here, we show the effect of growth temperature on the defect formation, optical performance, and crystal stability in monolayer WSe2 via a combination of Raman and photoluminescence (PL) spectroscopy study. We found that the defect formation and distribution in monolayer WSe2 are closely related to the growth temperature. These defect density and distribution can be controlled by adjusting the growth temperature. Aging experiments directly demonstrate that these defects are an active center for the decomposition process. Instead, monolayer WSe2 grown under optimal conditions shows a strong and uniform emission dominated by neutral exciton at room temperature. The results provide an effective approach to optimize TMDCs growth.
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Affiliation(s)
- Long Fang
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083 China
| | - Haitao Chen
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410083 China
| | - Xiaoming Yuan
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083 China
| | - Han Huang
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083 China
| | - Gen Chen
- School of Materials Science and Engineering, Central South University, Changsha, 410083 China
| | - Lin Li
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083 China
| | - Junnan Ding
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083 China
| | - Jun He
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083 China
| | - Shaohua Tao
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083 China
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15
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Yang D, Wang H, Luo S, Wang C, Zhang S, Guo S. Paper-Cut Flexible Multifunctional Electronics Using MoS 2 Nanosheet. NANOMATERIALS (BASEL, SWITZERLAND) 2019; 9:E922. [PMID: 31248055 PMCID: PMC6669538 DOI: 10.3390/nano9070922] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/09/2019] [Revised: 06/18/2019] [Accepted: 06/21/2019] [Indexed: 11/18/2022]
Abstract
Art and science represent human creativity and rational thinking, respectively. When the two seemingly opposite fields are intertwined, there is always a life-changing spark. In particular, the integration of ancient traditional Chinese art into the latest electronic devices is always been an unexcavated topic. Fabricating two-dimensional material with a tensile strain less than 3% with an ultimate global stretch has been an important problem that plagues the current flexible electronics field. The current research is limited to material in small scale, and it is always necessary to develop and extend large-sized flexible electronic systems. Here, inspired by the traditional Chinese paper-cut structure, we present a highly deformable multifunctional electronic system based on the MoS2 nanosheet. In this work, we first demonstrate how the traditional paper-cut structure can open the view of flexible electronics. In order to obtain a large area of MoS2 with excellent performance, we use a metal-assisted exfoliation method to transfer MoS2, followed by fabricating a field effect transistor to characterize its excellent electrical properties. Two photodetectors and a temperature sensor are produced with good performance. The mechanical simulation proves that the structure has more advantages in stretchability than other typical paper-cut structures. From the experimental and mechanical point of view, it is proved that the device can work stably under high deformation. We finally show that the device has broad application prospects in highly deformed organs, tissues, and joints. These findings set a good example of traditional Chinese culture to guide innovation in the field of electronic devices.
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Affiliation(s)
- Dong Yang
- School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026, China
- Athioula A. Martinos Center for Biomedical Imaging, Department of Radiology, Massachusetts General Hospital, Harvard Medical School, Charlestown, MA 02129, USA
| | - Hao Wang
- Athioula A. Martinos Center for Biomedical Imaging, Department of Radiology, Massachusetts General Hospital, Harvard Medical School, Charlestown, MA 02129, USA
| | - Shenglin Luo
- Athioula A. Martinos Center for Biomedical Imaging, Department of Radiology, Massachusetts General Hospital, Harvard Medical School, Charlestown, MA 02129, USA
| | - Changning Wang
- Athioula A. Martinos Center for Biomedical Imaging, Department of Radiology, Massachusetts General Hospital, Harvard Medical School, Charlestown, MA 02129, USA
| | - Sheng Zhang
- Micro/Nano Technology Center, Tokai University, 4-1-1 Kitakaname, Hiratsuka-city, Kanagawa 259-1292, Japan.
| | - Shiqi Guo
- School of Engineering and Applied Science, The George Washington University, Washington, DC 20052, USA.
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA.
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