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Ban HW, Vafaie M, Levina L, Xia P, Imran M, Liu Y, Najarian AM, Sargent EH. Resurfacing of InAs Colloidal Quantum Dots Equalizes Photodetector Performance across Synthetic Routes. J Am Chem Soc 2024; 146:24935-24944. [PMID: 39197089 DOI: 10.1021/jacs.4c06202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/30/2024]
Abstract
The synthesis of highly monodispersed InAs colloidal quantum dots (CQDs) is needed in InAs CQD-based optoelectronic devices. Because of the complexities of working with arsenic precursors such as tris-trimethylsilyl arsine ((TMSi)3As) and tris-trimethylgermyl arsine ((TMGe)3As), several attempts have been made to identify new candidates for synthesis; yet, to date, only the aforementioned two highly reactive precursors have led to excellent photodetector device performance. We begin the present study by investigating the mechanism, finding that the use of the cosurfactant dioctylamine plays a crucial role in producing monodispersed InAs populations. Through quantitative analysis of ligands on the surface of InAs CQDs, we find that (TMGe)3As leads to In-rich characteristics, and we document the presence of an amorphous In-oleate shell on the surface. This we find causes surface defects, and thus, we develop materials processing strategies to remove the surface shell with a view to achieving efficient charge transfer in CQD solids. As a result, we develop resurfacing protocols, tailored to each dot synthesis, that produce balanced In-to-As stoichiometry regardless of synthetic input, enabling us to fabricate NIR photodetectors that achieve best-in-class EQEs at 940 nm excitons (25-28%, biased), independent of the synthetic pathway.
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Affiliation(s)
- Hyeong Woo Ban
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, ON M5S 3G4, Canada
| | - Maral Vafaie
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, ON M5S 3G4, Canada
| | - Larissa Levina
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, ON M5S 3G4, Canada
| | - Pan Xia
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, ON M5S 3G4, Canada
| | - Muhammad Imran
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, ON M5S 3G4, Canada
| | - Yanjiang Liu
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, ON M5S 3G4, Canada
| | - Amin Morteza Najarian
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, ON M5S 3G4, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, ON M5S 3G4, Canada
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2
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Yu W, Chamkouri H, Chen L. Recent advancement on quantum dot-coupled heterojunction structures in catalysis:A review. CHEMOSPHERE 2024; 357:141944. [PMID: 38614402 DOI: 10.1016/j.chemosphere.2024.141944] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/25/2024] [Revised: 03/20/2024] [Accepted: 04/06/2024] [Indexed: 04/15/2024]
Abstract
Photoelectrocatalysis stands as an exceptionally efficient and sustainable method, significantly addressing both energy scarcity and environmental pollution challenges. Within this realm, quantum dots (QDs) have garnered immense attention for their outstanding catalytic properties. Their unique features-cost-effectiveness, high efficiency, remarkable stability, and exceptional photovoltaic characteristics-set them apart from other tunable semiconductor materials. Heterojunction structures based on quantum dots remarkably boost solar energy conversion efficiency. This review aims to provide a comprehensive overview of the impacts generated by heterojunctions formed using diverse quantum dots and delve into their catalytic applications. Moreover, it sheds light on recent advancements utilizing quantum dots in modifying optoelectronic semiconductor materials for diverse purposes, ranging from hydrogen (H2) generation to carbon and nitrogen reduction, as well as pollutant degradation. Additionally, the paper offers valuable insights into challenges faced by quantum dot applications and outlines promising future prospects.
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Affiliation(s)
- Wenkai Yu
- School of Materials Science and Engineering, Hefei University of Technology, Hefei, 230009, China
| | - Hossein Chamkouri
- School of Materials Science and Engineering, Hefei University of Technology, Hefei, 230009, China
| | - Lei Chen
- School of Materials Science and Engineering, Hefei University of Technology, Hefei, 230009, China; Intelligent Manufacturing Institute of HFUT, Hefei, 230051, China.
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3
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Roshan H, Zhu D, Piccinotti D, Dai J, De Franco M, Barelli M, Prato M, De Trizio L, Manna L, Di Stasio F. Near Infrared Light-Emitting Diodes Based on Colloidal InAs/ZnSe Core/Thick-Shell Quantum Dots. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2400734. [PMID: 38622892 PMCID: PMC11187924 DOI: 10.1002/advs.202400734] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2024] [Revised: 03/10/2024] [Indexed: 04/17/2024]
Abstract
Heavy-metal-free III-V colloidal quantum dots (QDs) exhibit promising attributes for application in optoelectronics. Among them, InAs QDs are demonstrating excellent optical performance with respect to absorption and emission in the near-infrared spectral domain. Recently, InAs QDs attained a substantial improvement in photoluminescence quantum yield, achieving 70% at a wavelength of 900 nm through the strategic overgrowth of a thick ZnSe shell atop the InAs core. In the present study, light-emitting diodes (LEDs) based on this type of InAs/ZnSe QDs are fabricated, reaching an external quantum efficiency (EQE) of 13.3%, a turn-on voltage of 1.5V, and a maximum radiance of 12 Wsr-1m-2. Importantly, the LEDs exhibit an extensive emission dynamic range, characterized by a nearly linear correlation between emission intensity and current density, which can be attributed to the efficient passivation provided by the thick ZnSe shell. The obtained results are comparable to state-of-the-art PbS QD LEDs. Furthermore, it should be stressed not only that the fabricated LEDs are fully RoHS-compliant but also that the emitting InAs QDs are prepared via a synthetic route based on a non-pyrophoric, cheap, and commercially available as precursor, namely tris(dimethylamino)-arsine.
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Affiliation(s)
- Hossein Roshan
- Photonic NanomaterialsIstituto Italiano di TecnologiaVia Morego 30Genova16163Italy
| | - Dongxu Zhu
- NanochemistryIstituto Italiano di TecnologiaVia Morego 30Genova16163Italy
| | - Davide Piccinotti
- Photonic NanomaterialsIstituto Italiano di TecnologiaVia Morego 30Genova16163Italy
| | - Jinfei Dai
- NanochemistryIstituto Italiano di TecnologiaVia Morego 30Genova16163Italy
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic TechniqueSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'an710049China
| | - Manuela De Franco
- Photonic NanomaterialsIstituto Italiano di TecnologiaVia Morego 30Genova16163Italy
- Dipartimento di Chimica e Chimica IndustrialeUniversità degli Studi di GenovaVia Dodecaneso 31Genova16146Italy
| | - Matteo Barelli
- Photonic NanomaterialsIstituto Italiano di TecnologiaVia Morego 30Genova16163Italy
| | - Mirko Prato
- Materials Characterization FacilityIstituto Italiano di TecnologiaVia Morego 30Genova16163Italy
| | - Luca De Trizio
- Chemistry FacilityIstituto Italiano di TecnologiaVia Morego 30Genova16163Italy
| | - Liberato Manna
- NanochemistryIstituto Italiano di TecnologiaVia Morego 30Genova16163Italy
| | - Francesco Di Stasio
- Photonic NanomaterialsIstituto Italiano di TecnologiaVia Morego 30Genova16163Italy
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4
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Mir WJ, Sheikh T, Nematulloev S, Maity P, Yorov KE, Emwas AH, Hedhili MN, Khan MS, Abulikemu M, Mohammed OF, Bakr OM. One-Pot Colloidal Synthesis Enables Highly Tunable InSb Short-Wave Infrared Quantum Dots Exhibiting Carrier Multiplication. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306535. [PMID: 38063843 DOI: 10.1002/smll.202306535] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2023] [Revised: 11/18/2023] [Indexed: 05/12/2024]
Abstract
Colloidal quantum dots (CQDs) are emerging materials for short-wave infrared (SWIR, ≈1100-3000 nm) photodetectors, which are technologically important for a broad array of applications. Unfortunately, the most developed SWIR CQD systems are Pb and Hg chalcogenides; their toxicity and regulated compositions limit their applications. InSb CQD system is a potential environmentally friendly alternative, whose bandgap in theory, is tunable via quantum confinement across the SWIR spectrum. However, InSb CQDs are difficult to exploit, due to their complex syntheses and uncommon reactive precursors, which greatly hinder their application and study. Here, a one-pot synthesis strategy is reported using commercially available precursors to synthesize-under standard colloidal synthesis conditions-high-quality, size-tunable InSb CQDs. With this strategy, the large Bohr exciton radius of InSb can be exploited for tuning the bandgap of the CQDs over a wide range of wavelengths (≈1250-1860 nm) across the SWIR region. Furthermore, by changing the surface ligands of the CQDs from oleic acid (OA) to 1-dodecanthiol (DDT), a ≈20-fold lengthening in the excited-state lifetime, efficient carrier multiplication, and slower carrier annihilation are observed. The work opens a wide range of SWIR applications to a promising class of Pb- and Hg-free CQDs.
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Affiliation(s)
- Wasim J Mir
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Tariq Sheikh
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Saidkhodzha Nematulloev
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Partha Maity
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia
- Advanced Membranes and Porous Materials Center, Division of Physical Science and Engineering, Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Khursand E Yorov
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Abdul-Hamid Emwas
- KAUST - Core Labs, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Mohamed Nejib Hedhili
- KAUST - Core Labs, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Mudeha Shafat Khan
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Mutalifu Abulikemu
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Omar F Mohammed
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia
- Advanced Membranes and Porous Materials Center, Division of Physical Science and Engineering, Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Osman M Bakr
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia
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5
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Kim S, Lee K, Gwak N, Shin S, Seo J, Noh SH, Kim D, Lee Y, Kong H, Yeo D, Kim TA, Lee SY, Jang J, Oh N. Colloidal Synthesis of P-Type Zn 3As 2 Nanocrystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310671. [PMID: 38279779 DOI: 10.1002/adma.202310671] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2023] [Revised: 01/11/2024] [Indexed: 01/28/2024]
Abstract
Zinc pnictides, particularly Zn3As2, hold significant promise for optoelectronic applications owing to their intrinsic p-type behavior and appropriate bandgaps. However, despite the outstanding properties of colloidal Zn3As2 nanocrystals, research in this area is lacking because of the absence of suitable precursors, occurrence of surface oxidation, and intricacy of the crystal structures. In this study, a novel and facile solution-based synthetic approach is presented for obtaining highly crystalline p-type Zn3As2 nanocrystals with accurate stoichiometry. By carefully controlling the feed ratio and reaction temperature, colloidal Zn3As2 nanocrystals are successfully obtained. Moreover, the mechanism underlying the conversion of As precursors in the initial phases of Zn3As2 synthesis is elucidated. Furthermore, these nanocrystals are employed as active layers in field-effect transistors that exhibit inherent p-type characteristics with native surface ligands. To enhance the charge transport properties, a dual passivation strategy is introduced via phase-transfer ligand exchange, leading to enhanced hole mobilities as high as 0.089 cm2 V-1 s-1. This study not only contributes to the advancement of nanocrystal synthesis, but also opens up new possibilities for previously underexplored p-type nanocrystal research.
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Affiliation(s)
- Seongchan Kim
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Kyumin Lee
- Department of Energy Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Namyoung Gwak
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Seungki Shin
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Jaeyoung Seo
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Sung Hoon Noh
- Department of Energy Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Doyeon Kim
- Department of Energy Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Yunseo Lee
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Hyein Kong
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Dongjoon Yeo
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Tae Ann Kim
- Convergence Research Center for Solutions to Electromagnetic Interference in Future-Mobility, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea
| | - Seung-Yong Lee
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Jaeyoung Jang
- Department of Energy Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Nuri Oh
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
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6
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Chatterjee S, Nemoto K, Sun HT, Shirahata N. Rational ligand design for enhanced carrier mobility in self-powered SWIR photodiodes based on colloidal InSb quantum dots. NANOSCALE HORIZONS 2024; 9:817-827. [PMID: 38501216 DOI: 10.1039/d4nh00038b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/20/2024]
Abstract
Solution-processed colloidal III-V semiconductor quantum dot photodiodes (QPDs) have potential applications in short-wavelength infrared (SWIR) imaging due to their tunable spectral response range, possible multiple-exciton generation, operation at 0-V bias voltage and low-cost fabrication and are also expected to replace lead- and mercury-based counterparts that are hampered by reliance on restricted elements (RoHS). However, the use of III-V CQDs as photoactive layers in SWIR optoelectronic applications is still a challenge because of underdeveloped ligand engineering for improving the in-plane conductivity of the QD assembled films. Here, we report on ligand engineering of InSb CQDs to enhance the optical response performance of self-powered SWIR QPDs. Specifically, by replacing the conventional ligand (i.e., oleylamine) with sulfide, the interparticle distance between the CQDs was shortened from 5.0 ± 0.5 nm to 1.5 ± 0.5 nm, leading to improved carrier mobility for high photoresponse speed to SWIR light. Furthermore, the use of sulfide ligands resulted in a low dark current density (∼nA cm-2) with an improved EQE of 18.5%, suggesting their potential use in toxic-based infrared image sensors.
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Affiliation(s)
- Subhashri Chatterjee
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan
- Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-0814, Japan
| | - Kazuhiro Nemoto
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan
| | - Hong-Tao Sun
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan
| | - Naoto Shirahata
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan
- Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-0814, Japan
- Department of Physics, Chuo University, 1-13-27 Kasuga, Bunkyo, Tokyo 112-8551, Japan
- CNRS-Saint-Gobain-NIMS, IRL3629, Laboratory for Innovative Key Materials and Structures, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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7
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Lee J, Zhao T, Yang S, Muduli M, Murray CB, Kagan CR. One-pot heat-up synthesis of short-wavelength infrared, colloidal InAs quantum dots. J Chem Phys 2024; 160:071103. [PMID: 38380752 DOI: 10.1063/5.0187162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/11/2023] [Accepted: 01/22/2024] [Indexed: 02/22/2024] Open
Abstract
III-V colloidal quantum dots (QDs) promise Pb and Hg-free QD compositions with which to build short-wavelength infrared (SWIR) optoelectronic devices. However, their synthesis is limited by the availability of group-V precursors with controllable reactivities to prepare monodisperse, SWIR-absorbing III-V QDs. Here, we report a one-pot heat-up method to synthesize ∼8 nm edge length (∼6.5 nm in height) tetrahedral, SWIR-absorbing InAs QDs by increasing the [In3+]:[As3+] ratio introduced using commercially available InCl3 and AsCl3 precursors and by decreasing the concentration and optimizing the volume of the reducing reagent superhydride to control the concentration of In(0) and As(0) intermediates through QD nucleation and growth. InAs QDs are treated with NOBF4, and their deposited films are exchanged with Na2S to yield n-type InAs QD films. We realize the only colloidal InAs QD photoconductors with responsivity at the technologically important wavelength of 1.55 μm.
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Affiliation(s)
- J Lee
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - T Zhao
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - S Yang
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - M Muduli
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - C B Murray
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - C R Kagan
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
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8
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Zhang Y, Xia P, Rehl B, Parmar DH, Choi D, Imran M, Chen Y, Liu Y, Vafaie M, Li C, Atan O, Pina JM, Paritmongkol W, Levina L, Voznyy O, Hoogland S, Sargent EH. Dicarboxylic Acid-Assisted Surface Oxide Removal and Passivation of Indium Antimonide Colloidal Quantum Dots for Short-Wave Infrared Photodetectors. Angew Chem Int Ed Engl 2024; 63:e202316733. [PMID: 38170453 DOI: 10.1002/anie.202316733] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2023] [Revised: 12/23/2023] [Accepted: 01/03/2024] [Indexed: 01/05/2024]
Abstract
Heavy-metal-free III-V colloidal quantum dots (CQDs) are promising materials for solution-processed short-wave infrared (SWIR) photodetectors. Recent progress in the synthesis of indium antimonide (InSb) CQDs with sizes smaller than the Bohr exciton radius enables quantum-size effect tuning of the band gap. However, it has been challenging to achieve uniform InSb CQDs with band gaps below 0.9 eV, as well as to control the surface chemistry of these large-diameter CQDs. This has, to date, limited the development of InSb CQD photodetectors that are sensitive to ≥ ${\ge }$ 1400 nm light. Here we adopt solvent engineering to facilitate a diffusion-limited growth regime, leading to uniform CQDs with a band gap of 0.89 eV. We then develop a CQD surface reconstruction strategy that employs a dicarboxylic acid to selectively remove the native In/Sb oxides, and enables a carboxylate-halide co-passivation with the subsequent halide ligand exchange. We find that this strategy reduces trap density by half compared to controls, and enables electronic coupling among CQDs. Photodetectors made using the tailored CQDs achieve an external quantum efficiency of 25 % at 1400 nm, the highest among III-V CQD photodetectors in this spectral region.
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Affiliation(s)
- Yangning Zhang
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Pan Xia
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Benjamin Rehl
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Darshan H Parmar
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Dongsun Choi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Muhammad Imran
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Yiqing Chen
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Yanjiang Liu
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Maral Vafaie
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Chongwen Li
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Ozan Atan
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Joao M Pina
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Watcharaphol Paritmongkol
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
- Department of Materials Science and Engineering, School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology, 21210, Rayong, Thailand
| | - Larissa Levina
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Oleksandr Voznyy
- Department of Physical and Environmental Sciences, University of Toronto (Scarborough), 1065 Military Trail, M1C 1A4, Toronto, Ontario, Canada
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
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9
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Peng L, Wang Y, Ren Y, Wang Z, Cao P, Konstantatos G. InSb/InP Core-Shell Colloidal Quantum Dots for Sensitive and Fast Short-Wave Infrared Photodetectors. ACS NANO 2024. [PMID: 38305195 DOI: 10.1021/acsnano.3c12007] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/03/2024]
Abstract
Colloidal quantum dot (CQD) technology is considered the main contender toward a low-cost high-performance optoelectronic technology platform for applications in the short-wave infrared (SWIR) to enable 3D imaging, LIDAR night vision, etc. in the consumer electronics and automotive markets. In order to unleash the full potential of this technology, there is a need for a material that is environmentally friendly, thus RoHS compliant, and possesses adequate optoelectronic properties to deliver high-performance devices. InSb CQDs hold great potential in view of their RoHS-compliant nature and─in principle─facile access to the SWIR. However, to date progress in realizing high-performance optoelectronic devices, including photodetectors (PDs), has been limited. Here, we have developed a synthesis method for producing size-tunable InSb CQDs with distinct excitonic peaks spanning a wide range from 900 to 1750 nm. To passivate the surface defects and enhance the photoluminescence (PL) efficiency of InSb CQDs, we further designed an InSb/InP core-shell structure. By employing the InSb/InP core-shell CQDs in a photodiode device stack, we report on robust InSb CQD SWIR photodetectors that exhibit an external quantum efficiency (EQE) of 25% at 1240 nm, a wide linear dynamic range exceeding 128 dB, a photoresponse time of 70 ns, and a specific detectivity of 4.4 × 1011 jones.
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Affiliation(s)
- Lucheng Peng
- ICFO-Insitut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860 Barcelona, Spain
| | - Yongjie Wang
- ICFO-Insitut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860 Barcelona, Spain
| | - Yurong Ren
- ICFO-Insitut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860 Barcelona, Spain
| | - Zhuoran Wang
- ICFO-Insitut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860 Barcelona, Spain
| | - Pengfei Cao
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
| | - Gerasimos Konstantatos
- ICFO-Insitut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860 Barcelona, Spain
- ICREA-Institució Catalana de Recerca i Estudiats Avançats, Lluis Companys 23, 08010 Barcelona, Spain
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10
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Seo H, Eun HJ, Lee AY, Lee HK, Kim JH, Kim S. Colloidal InSb Quantum Dots for 1500 nm SWIR Photodetector with Antioxidation of Surface. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2306439. [PMID: 38036427 PMCID: PMC10811490 DOI: 10.1002/advs.202306439] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2023] [Revised: 11/06/2023] [Indexed: 12/02/2023]
Abstract
III-V quantum dots (QDs) have emerged as significant alternatives to Cd- and Pb-based QDs, garnering notable attention over the past two decades. However, the understanding of III-V QDs, particularly in the short wave-infrared (SWIR) region, remains limited. InAs QDs are widely recognized as the most prominent SWIR QDs, but their absorption beyond 1400 nm presents various challenges. Consequently, InSb QDs with relatively narrower bandgaps have been investigated; however, research on their device applications is lacking. In this study, InSb QDs are synthesized with absorption ranging from 1000 to 1700 nm by introducing Cl- ions to enhance QD surface stability during synthesis. Additionally, it coated InAs and ZnSe shells onto the InSb QDs to validate photoluminescence in the SWIR region and improve photostability. Subsequently, these QDs are employed in the fabrication of photodetector devices, resulting in photodetection above 1500 nm using Pb-free QDs. The photodetection device exhibited an external quantum efficiency (EQE) of 11.4% at 1370 nm and 6.3% at 1520 nm for InSb core QDs, and 4.6% at 1520 nm for InSb/InAs core/shell QDs, marking the successful implementation of such a device. In detail, the 1520 nm for InSb core device showed a dark current density(JD ) value of: 1.46 × 10-9 A/cm2 , responsivity(R): 0.078 A/W, and specific detectivity based on the shot noise(Dsh *): 3.6 × 1012 Jones at 0 V.
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Affiliation(s)
- Haewoon Seo
- Department of Molecular Science and TechnologyAI‐Superconvergence KIURI Translational Research CenterAjou UniversitySuwonGyeonggi‐do443–749Republic of Korea
| | - Hyeong Ju Eun
- Department of Molecular Science and TechnologyAjou UniversitySuwonGyeonggi‐do443–749Republic of Korea
| | - Ah Yeong Lee
- Department of Molecular Science and TechnologyAjou UniversitySuwonGyeonggi‐do443–749Republic of Korea
| | - Hang Ken Lee
- Advanced Energy Materials Research CenterKorea Research Institute of Chemical Technology (KRICT)Daejeon34114Republic of Korea
| | - Jong H. Kim
- Department of Molecular Science and TechnologyAjou UniversitySuwonGyeonggi‐do443–749Republic of Korea
| | - Sang‐Wook Kim
- Department of Molecular Science and TechnologyAjou UniversitySuwonGyeonggi‐do443–749Republic of Korea
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11
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Sheikh T, Mir WJ, Nematulloev S, Maity P, Yorov KE, Hedhili MN, Emwas AH, Khan MS, Abulikemu M, Mohammed OF, Bakr OM. InAs Nanorod Colloidal Quantum Dots with Tunable Bandgaps Deep into the Short-Wave Infrared. ACS NANO 2023; 17:23094-23102. [PMID: 37955579 DOI: 10.1021/acsnano.3c08796] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/14/2023]
Abstract
InAs colloidal quantum dots (CQDs) have emerged as candidate lead- and mercury-free solution-processed semiconductors for infrared technology due to their appropriate bulk bandgap, which can be tuned by quantum confinement, and promising charge-carrier transport properties. However, the lack of suitable arsenic precursors and readily accessible synthesis conditions have limited InAs CQDs to smaller sizes (<7 nm), with bandgaps largely restricted to <1400 nm in the near-infrared spectral window. Conventional InAs CQD synthesis requires highly reactive, hazardous arsenic precursors, which are commercially scarce, making the synthesis hard to control and study. Here, we present a controlled synthesis strategy (using only readily available and less reactive precursors) to overcome the practical wavelength limitation of InAs CQDs, achieving monodisperse InAs nanorod CQDs with bandgaps tunable from ∼1200 to ∼1800 nm, thus crossing deep into the short-wave infrared (SWIR) region. By controlling the reactivity through in situ precursor complexation, we isolate the reaction mechanism, producing InAs nanorod CQDs that display narrow excitonic features and efficient carrier multiplication. Our work enables InAs CQDs for a wider range of SWIR applications.
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Affiliation(s)
- Tariq Sheikh
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Wasim J Mir
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Saidkhodzha Nematulloev
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Partha Maity
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
- Advanced Membranes and Porous Materials Center, Division of Physical Science and Engineering, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Khursand E Yorov
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Mohamed Nejib Hedhili
- KAUST Core Laboratories, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Abdul-Hamid Emwas
- KAUST Core Laboratories, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Mudeha Shafat Khan
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Mutalifu Abulikemu
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Omar F Mohammed
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
- Advanced Membranes and Porous Materials Center, Division of Physical Science and Engineering, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Osman M Bakr
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
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12
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Muhammad, Choi D, Parmar DH, Rehl B, Zhang Y, Atan O, Kim G, Xia P, Pina JM, Li M, Liu Y, Voznyy O, Hoogland S, Sargent EH. Halide-Driven Synthetic Control of InSb Colloidal Quantum Dots Enables Short-Wave Infrared Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2306147. [PMID: 37734861 DOI: 10.1002/adma.202306147] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Revised: 09/13/2023] [Indexed: 09/23/2023]
Abstract
In the III-V family of colloidal quantum dot (CQD) semiconductors, InSb promises access to a wider range of infrared wavelengths compared to many light-sensing material candidates. However, achieving the necessary size, size-dispersity, and optical properties has been challenging. Here the synthetic challenges associated with InSb CQDs are investigated and it is found that uncontrolled reduction of the antimony precursor hampers the controlled growth of CQDs. To overcome this, a synthetic strategy that combines nonpyrophoric precursors with zinc halide additives is developed. The experimental and computational studies show that zinc halide additives decelerate the reduction of the antimony precursor, facilitating the growth of more uniformly sized CQDs. It is also found that the halide choice provides additional control over the strength of this effect. The resultant CQDs exhibit well-defined excitonic transitions in spectral range of 1.26-0.98 eV, along with strong photoluminescence. By implementing a postsynthesis ligand exchange, colloidally stable inks enabling the fabrication of high-quality CQD films are achieved. The first demonstration of InSb CQD photodetectors is presented reaching 75% external quantum efficiency (QE) at 1200 nm, to the knowledge the highest short-wave infrared (SWIR) QE reported among heavy-metal-free infrared CQD-based devices.
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Affiliation(s)
- Muhammad
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Dongsun Choi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Darshan H Parmar
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Benjamin Rehl
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Yangning Zhang
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Ozan Atan
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Gahyeon Kim
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
- Department of Chemistry, Korea University, Seoul, 02841, Republic of Korea
| | - Pan Xia
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Joao M Pina
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Mengsha Li
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario, M5S 3E4, Canada
| | - Yanjiang Liu
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario, M5S 3E4, Canada
| | - Oleksandr Voznyy
- Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario, M5S 3H6, Canada
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
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13
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Leemans J, Respekta D, Bai J, Braeuer S, Vanhaecke F, Hens Z. Formation of Colloidal In(As,P) Quantum Dots Active in the Short-Wave Infrared, Promoting Growth through Temperature Ramps. ACS NANO 2023; 17:20002-20012. [PMID: 37787479 DOI: 10.1021/acsnano.3c05138] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/04/2023]
Abstract
Colloidal InAs quantum dots (QDs) are widely studied as a printable optoelectronic material for short-wave infrared (SWIR) that is not restricted by regulations on hazardous substances. Such applications, however, require synthetic procedures that yield QDs with adjustable sizes at the end of the reaction. Here, we show that such one-size-one-batch protocols can be realized through temperature profiles that involve a rapid transition from a lower injection temperature to a higher reaction temperature. By expediting the transition to the reaction temperature and reducing the overall synthesis concentration, we can tune QD sizes from 4.5 to 10 nm, the latter corresponding to a band gap transition at 1600 nm. We argue that the temperature ramps provide a more distinct separation between nucleation at low temperature and growth at high temperature such that larger QDs are obtained by minimizing the nucleation time. The synthetic procedures introduced here will strongly promote the development of a SWIR optoelectronic technology based on InAs QDs, while the use of temperature profiles to steer a colloidal synthesis can find applications well beyond the specific case of InAs QDs.
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Affiliation(s)
- Jari Leemans
- Physics and Chemistry of Nanostructures, Department of Chemistry, Ghent University, 9000 Gent, Belgium
- Center for Nano and Biophotonics, Ghent University, 9000 Gent, Belgium
| | - Dobromił Respekta
- Physics and Chemistry of Nanostructures, Department of Chemistry, Ghent University, 9000 Gent, Belgium
- Center for Nano and Biophotonics, Ghent University, 9000 Gent, Belgium
| | - Jing Bai
- Physics and Chemistry of Nanostructures, Department of Chemistry, Ghent University, 9000 Gent, Belgium
- Center for Nano and Biophotonics, Ghent University, 9000 Gent, Belgium
| | - Simone Braeuer
- A&MS Research Group, Department of Chemistry, Ghent University, 9000 Gent, Belgium
| | - Frank Vanhaecke
- A&MS Research Group, Department of Chemistry, Ghent University, 9000 Gent, Belgium
| | - Zeger Hens
- Physics and Chemistry of Nanostructures, Department of Chemistry, Ghent University, 9000 Gent, Belgium
- Center for Nano and Biophotonics, Ghent University, 9000 Gent, Belgium
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14
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Zhu D, Bahmani Jalali H, Saleh G, Di Stasio F, Prato M, Polykarpou N, Othonos A, Christodoulou S, Ivanov YP, Divitini G, Infante I, De Trizio L, Manna L. Boosting the Photoluminescence Efficiency of InAs Nanocrystals Synthesized with Aminoarsine via a ZnSe Thick-Shell Overgrowth. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303621. [PMID: 37243572 DOI: 10.1002/adma.202303621] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2023] [Revised: 05/18/2023] [Indexed: 05/29/2023]
Abstract
InAs-based nanocrystals can enable restriction of hazardous substances (RoHS) compliant optoelectronic devices, but their photoluminescence efficiency needs improvement. We report an optimized synthesis of InAs@ZnSe core@shell nanocrystals allowing to tune the ZnSe shell thickness up to seven mono-layers (ML) and to boost the emission, reaching a quantum yield of ≈70% at ≈900 nm. It is demonstrated that a high quantum yield can be attained when the shell thickness is at least ≈3ML. Notably, the photoluminescence lifetimeshows only a minor variation as a function of shell thickness, whereas the Auger recombination time (a limiting aspect in technological applications when fast) slows down from 11 to 38 ps when increasing the shell thickness from 1.5 to 7MLs. Chemical and structural analyses evidence that InAs@ZnSe nanocrystals do not exhibit any strain at the core-shell interface, likely due to the formation of an InZnSe interlayer. This is supported by atomistic modeling, which indicates the interlayer as being composed of In, Zn, Se and cation vacancies, alike to the In2 ZnSe4 crystal structure. The simulations reveal an electronic structure consistent with that of type-I heterostructures, in which localized trap states can be passivated by a thick shell (>3ML) and excitons are confined in the core.
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Affiliation(s)
- Dongxu Zhu
- Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy
| | - Houman Bahmani Jalali
- Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy
- Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy
| | - Gabriele Saleh
- Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy
| | - Francesco Di Stasio
- Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy
| | - Mirko Prato
- Materials Characterization, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy
| | - Nefeli Polykarpou
- Inorganic Nanocrystals Laboratory, Department of Chemistry, University of Cyprus, Nicosia, 1678, Cyprus
| | - Andreas Othonos
- Laboratory of Ultrafast Science, Department of Physics, University of Cyprus, Nicosia, 1678, Cyprus
| | - Sotirios Christodoulou
- Inorganic Nanocrystals Laboratory, Department of Chemistry, University of Cyprus, Nicosia, 1678, Cyprus
| | - Yurii P Ivanov
- Electron Spectroscopy and Nanoscopy, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy
| | - Giorgio Divitini
- Electron Spectroscopy and Nanoscopy, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy
| | - Ivan Infante
- BCMaterials, Basque Center for Materials, Applications, and Nanostructures, UPV/EHU Science Park, Leioa, 48940, Spain
- Ikerbasque Basque Foundation for Science, Bilbao, 48009, Spain
| | - Luca De Trizio
- Chemistry Facility, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy
| | - Liberato Manna
- Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy
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15
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Liu Z, Pascazio R, Goldoni L, Maggioni D, Zhu D, Ivanov YP, Divitini G, Camarelles JL, Jalali HB, Infante I, De Trizio L, Manna L. Colloidal InAs Tetrapods: Impact of Surfactants on the Shape Control. J Am Chem Soc 2023; 145:18329-18339. [PMID: 37608781 PMCID: PMC10450814 DOI: 10.1021/jacs.3c03906] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/14/2023] [Indexed: 08/24/2023]
Abstract
We have approached the synthesis of colloidal InAs nanocrystals (NCs) using amino-As and ligands that are different from the commonly employed oleylamine (OA). We found that carboxylic and phosphonic acids led only to oxides, whereas tri-n-octylphosphine, dioctylamine, or trioctylamine (TOA), when employed as the sole ligands, yielded InAs NCs with irregular sizes and a broad size distribution. Instead, various combinations of TOA and OA delivered InAs NCs with good control over the size distribution, and the TOA:OA volume ratio of 4:1 generated InAs tetrapods with arm length of 5-6 nm. Contrary to tetrapods of II-VI materials, which have a zinc-blende core and wurtzite arms, these NCs are entirely zinc-blende, with arms growing along the ⟨111⟩ directions. They feature a narrow excitonic peak at ∼950 nm in absorption and a weak photoluminescence emission at 1050 nm. Our calculations indicated that the bandgap of the InAs tetrapods is mainly governed by the size of their core and not by their arm lengths when these are longer than ∼3 nm. Nuclear magnetic resonance analyses revealed that InAs tetrapods are mostly passivated by OA with only a minor fraction of TOA. Molecular dynamics simulations showed that OA strongly binds to the (111) facets whereas TOA weakly binds to the edges and corners of the NCs and their combined use (at high TOA:OA volume ratios) promotes growth along the ⟨111⟩ directions, eventually forming tetrapods. Our work highlights the use of mixtures of ligands as a means of improving control over InAs NCs size and size distribution.
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Affiliation(s)
- Zheming Liu
- Nanochemistry, Analytical Chemistry, Materials Characterization, Electron Spectroscopy
and Nanoscopy, Photonic Nanomaterials and Chemistry Facility, Istituto Italiano
di Tecnologia, Via Morego 30, 16163 Genova, Italy
- Dipartimento
di Chimica e Chimica Industriale, Università
di Genova, 16146 Genova, Italy
| | - Roberta Pascazio
- Nanochemistry, Analytical Chemistry, Materials Characterization, Electron Spectroscopy
and Nanoscopy, Photonic Nanomaterials and Chemistry Facility, Istituto Italiano
di Tecnologia, Via Morego 30, 16163 Genova, Italy
- Dipartimento
di Chimica e Chimica Industriale, Università
di Genova, 16146 Genova, Italy
| | - Luca Goldoni
- Nanochemistry, Analytical Chemistry, Materials Characterization, Electron Spectroscopy
and Nanoscopy, Photonic Nanomaterials and Chemistry Facility, Istituto Italiano
di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Daniela Maggioni
- Dipartimento
di Chimica, Università degli Studi
di Milano, Via Golgi 19, 20133 Milano, Italy
| | - Dongxu Zhu
- Nanochemistry, Analytical Chemistry, Materials Characterization, Electron Spectroscopy
and Nanoscopy, Photonic Nanomaterials and Chemistry Facility, Istituto Italiano
di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Yurii P. Ivanov
- Nanochemistry, Analytical Chemistry, Materials Characterization, Electron Spectroscopy
and Nanoscopy, Photonic Nanomaterials and Chemistry Facility, Istituto Italiano
di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Giorgio Divitini
- Nanochemistry, Analytical Chemistry, Materials Characterization, Electron Spectroscopy
and Nanoscopy, Photonic Nanomaterials and Chemistry Facility, Istituto Italiano
di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Jordi Llusar Camarelles
- BCMaterials,
Basque Center for Materials, Applications, and Nanostructures, UPV/EHU Science Park, Leioa 48940, Spain
| | - Houman Bahmani Jalali
- Nanochemistry, Analytical Chemistry, Materials Characterization, Electron Spectroscopy
and Nanoscopy, Photonic Nanomaterials and Chemistry Facility, Istituto Italiano
di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Ivan Infante
- BCMaterials,
Basque Center for Materials, Applications, and Nanostructures, UPV/EHU Science Park, Leioa 48940, Spain
- Ikerbasque
Basque Foundation for Science Bilbao 48009, Spain
| | - Luca De Trizio
- Nanochemistry, Analytical Chemistry, Materials Characterization, Electron Spectroscopy
and Nanoscopy, Photonic Nanomaterials and Chemistry Facility, Istituto Italiano
di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Liberato Manna
- Nanochemistry, Analytical Chemistry, Materials Characterization, Electron Spectroscopy
and Nanoscopy, Photonic Nanomaterials and Chemistry Facility, Istituto Italiano
di Tecnologia, Via Morego 30, 16163 Genova, Italy
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16
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Nguyen HA, Dixon G, Dou FY, Gallagher S, Gibbs S, Ladd DM, Marino E, Ondry JC, Shanahan JP, Vasileiadou ES, Barlow S, Gamelin DR, Ginger DS, Jonas DM, Kanatzidis MG, Marder SR, Morton D, Murray CB, Owen JS, Talapin DV, Toney MF, Cossairt BM. Design Rules for Obtaining Narrow Luminescence from Semiconductors Made in Solution. Chem Rev 2023. [PMID: 37311205 DOI: 10.1021/acs.chemrev.3c00097] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Solution-processed semiconductors are in demand for present and next-generation optoelectronic technologies ranging from displays to quantum light sources because of their scalability and ease of integration into devices with diverse form factors. One of the central requirements for semiconductors used in these applications is a narrow photoluminescence (PL) line width. Narrow emission line widths are needed to ensure both color and single-photon purity, raising the question of what design rules are needed to obtain narrow emission from semiconductors made in solution. In this review, we first examine the requirements for colloidal emitters for a variety of applications including light-emitting diodes, photodetectors, lasers, and quantum information science. Next, we will delve into the sources of spectral broadening, including "homogeneous" broadening from dynamical broadening mechanisms in single-particle spectra, heterogeneous broadening from static structural differences in ensemble spectra, and spectral diffusion. Then, we compare the current state of the art in terms of emission line width for a variety of colloidal materials including II-VI quantum dots (QDs) and nanoplatelets, III-V QDs, alloyed QDs, metal-halide perovskites including nanocrystals and 2D structures, doped nanocrystals, and, finally, as a point of comparison, organic molecules. We end with some conclusions and connections, including an outline of promising paths forward.
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Affiliation(s)
- Hao A Nguyen
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Grant Dixon
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Florence Y Dou
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Shaun Gallagher
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Stephen Gibbs
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Dylan M Ladd
- Department of Materials Science and Engineering, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Emanuele Marino
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Dipartimento di Fisica e Chimica, Università degli Studi di Palermo, Via Archirafi 36, 90123 Palermo, Italy
| | - Justin C Ondry
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - James P Shanahan
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Eugenia S Vasileiadou
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Stephen Barlow
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Daniel R Gamelin
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - David S Ginger
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - David M Jonas
- Department of Chemistry, University of Colorado Boulder, Boulder, Colorado 80309, United States
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Mercouri G Kanatzidis
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Seth R Marder
- Department of Chemistry, University of Colorado Boulder, Boulder, Colorado 80309, United States
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
- Department of Chemical and Biological Engineering, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Daniel Morton
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Christopher B Murray
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Jonathan S Owen
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Dmitri V Talapin
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Michael F Toney
- Department of Materials Science and Engineering, University of Colorado Boulder, Boulder, Colorado 80303, United States
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
- Department of Chemical and Biological Engineering, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Brandi M Cossairt
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
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17
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Kim JH, Jung BK, Kim SK, Yun KR, Ahn J, Oh S, Jeon MG, Lee TJ, Kim S, Oh N, Oh SJ, Seong TY. Ultrasensitive Near-Infrared InAs Colloidal Quantum Dot-ZnON Hybrid Phototransistor Based on a Gradated Band Structure. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023:e2207526. [PMID: 37088787 DOI: 10.1002/advs.202207526] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2022] [Revised: 03/14/2023] [Indexed: 05/03/2023]
Abstract
Amorphous metal oxide semiconductor phototransistors (MOTPs) integrated with colloidal quantum dots (QDs) (QD-MOTPs) are promising infrared photodetectors owing to their high photoconductive gain, low off-current level, and high compatibility with pixel circuits. However, to date, the poor mobility of conventional MOTPs, such as indium gallium zinc oxide (IGZO), and the toxicity of lead (Pb)-based QDs, such as lead sulfide and lead selenide, has limited the commercial applications of QD-MOTPs. Herein, an ultrasensitive QD-MOTP fabricated by integrating a high-mobility zinc oxynitride (ZnON)-based MOTP and lead-free indium arsenide (InAs) QDs is demonstrated. A new gradated bandgap structure is introduced in the InAs QD layer that absorbs infrared light, which prevents carriers from moving backward and effectively reduces electron-hole recombination. Chemical, optical, and structural analyses confirm the movement of the photoexcited carriers in the graded band structure. The novel QD-MOTP exhibits an outstanding performance with a responsivity of 1.15 × 105 A W-1 and detectivity of 5.32 × 1016 Jones at a light power density of 2 µW cm-2 under illumination at 905 nm.
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Affiliation(s)
- Jong-Ho Kim
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Byung Ku Jung
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Su-Kyung Kim
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Kwang-Ro Yun
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Junhyuk Ahn
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Seongkeun Oh
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Min-Gyu Jeon
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Tae-Ju Lee
- Department of Nanophotonics, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Seongchan Kim
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04673, Republic of Korea
| | - Nuri Oh
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04673, Republic of Korea
| | - Soong Ju Oh
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Tae-Yeon Seong
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
- Department of Nanophotonics, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
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18
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Chi Y, Sun W, Zhou L, Pei S, Zeng H, Cheng Y, Chai S. The preparation of hybrid silicon quantum dots by one-step synthesis for tetracycline detection and antibacterial applications. ANALYTICAL METHODS : ADVANCING METHODS AND APPLICATIONS 2023; 15:1145-1156. [PMID: 36787098 DOI: 10.1039/d2ay02102a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In this study, we prepared three different silicon quantum dots (SiQDs-1, SiQDs-2 and SiQDs-3) by hydrothermal synthesis with rose Bengal as the reducing agent and triacetoxy(methyl)silane and allyloxytrimethylsilane as silicon sources. The as-prepared SiQDs not only exhibited potent antibacterial activity against Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) but also showed specific responses to tetracycline (TC). The minimum inhibitory concentrations (MICs) of SiQDs-1, SiQDs-2 and SiQDs-3 were 0.55 mg mL-1, 0.47 mg mL-1 and 0.39 mg mL-1 against E. coli, respectively, and 0.45 mg mL-1, 0.34 mg mL-1 and 0.34 mg mL-1 against S. aureus, respectively. By examining the morphologies of bacteria and generation of reactive oxygen species (ROS), we speculated that these SiQDs shrink the bacteria and even directly destroy the bacterial structural integrity through the production of singlet oxygen. In addition, the fluorescence quenching effectiveness of SiQDs-3 also showed a strong linear relationship with TC concentration in the range of 0-1.2 μM with a detection limit of 0.318 μM, as a result of the internal filtering effect. Together, SiQDs not only can be a candidate to treat resistant bacterial infections, but also may be applied in practical detection of TC.
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Affiliation(s)
- Yuting Chi
- Chongqing Key Laboratory of Industrial Fermentation Microorganism, Chongqing University of Science and Technology, Chongqing 401331, P. R. China.
- College of Chemistry and Chemical Engineering, Chongqing University of Science and Technology, Chongqing 401331, P. R. China
| | - Wanlin Sun
- Chongqing Key Laboratory of Industrial Fermentation Microorganism, Chongqing University of Science and Technology, Chongqing 401331, P. R. China.
- College of Chemistry and Chemical Engineering, Chongqing University of Science and Technology, Chongqing 401331, P. R. China
| | - Lijia Zhou
- Chongqing Key Laboratory of Industrial Fermentation Microorganism, Chongqing University of Science and Technology, Chongqing 401331, P. R. China.
- College of Chemistry and Chemical Engineering, Chongqing University of Science and Technology, Chongqing 401331, P. R. China
| | - Shuchen Pei
- Chongqing Key Laboratory of Industrial Fermentation Microorganism, Chongqing University of Science and Technology, Chongqing 401331, P. R. China.
- College of Chemistry and Chemical Engineering, Chongqing University of Science and Technology, Chongqing 401331, P. R. China
| | - Haichun Zeng
- Chongqing Key Laboratory of Industrial Fermentation Microorganism, Chongqing University of Science and Technology, Chongqing 401331, P. R. China.
- College of Chemistry and Chemical Engineering, Chongqing University of Science and Technology, Chongqing 401331, P. R. China
| | - Yunying Cheng
- Fujian Key Laboratory on Conservation and Sustainable Utilization of Marine Biodiversity, Fuzhou Institute of Oceanography, Minjiang University, Fuzhou 350108, P. R. China.
| | - Shuiqin Chai
- Chongqing Key Laboratory of Industrial Fermentation Microorganism, Chongqing University of Science and Technology, Chongqing 401331, P. R. China.
- College of Chemistry and Chemical Engineering, Chongqing University of Science and Technology, Chongqing 401331, P. R. China
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19
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Nemoto K, Watanabe J, Yamada H, Sun HT, Shirahata N. Impact of coherent core/shell architecture on fast response in InP-based quantum dot photodiodes. NANOSCALE ADVANCES 2023; 5:907-915. [PMID: 36756505 PMCID: PMC9890971 DOI: 10.1039/d2na00734g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/21/2022] [Accepted: 12/18/2022] [Indexed: 06/18/2023]
Abstract
Solution-processed, cadmium-free quantum dot (QD) photodiodes are compatible with printable optoelectronics and are regarded as a potential candidate for wavelength-selective optical sensing. However, a slow response time resulting from low carrier mobility and a poor dissociation of charge carriers in the optically active layer has hampered the development of the QD photodiodes with nontoxic device constituents. Herein, we report the first InP-based photodiode with a multilayer device architecture, working in photovoltaic mode in photodiode circuits. The photodiode showed the fastest response speed with rising and falling times of τ r = 4 ms and τ f = 9 ms at a voltage bias of 0 V at room temperature in ambient air among the Cd-free photodiodes. The single-digit millisecond photo responses were realized by efficient transportation of the photogenerated carriers in the optically active layer resulting from coherent InP/ZnS core/shell QD structure, fast separation of electron and hole pairs at the interface between QD and Al-doped ZnO layers, and optimized conditions for uniform deposition of each thin film. The results suggested the versatility of coherent core/shell QDs as a photosensitive layer, whose structures allow various semiconductor combinations without lattice mismatch considerations, towards fast response, high on/off ratios, and spectrally tunable optical sensing.
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Affiliation(s)
- Kazuhiro Nemoto
- Graduate School of Chemical Sciences and Engineering, Hokkaido University Sapporo 060-0814 Japan
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS) 1-1 Namiki Tsukuba 305-0044 Japan
| | - Junpei Watanabe
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS) 1-1 Namiki Tsukuba 305-0044 Japan
- Department of Physics, Chuo University 1-13-27 Kasuga Bunkyo Tokyo 112-8551 Japan
| | - Hiroyuki Yamada
- Graduate School of Chemical Sciences and Engineering, Hokkaido University Sapporo 060-0814 Japan
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS) 1-1 Namiki Tsukuba 305-0044 Japan
| | - Hong-Tao Sun
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS) 1-1 Namiki Tsukuba 305-0044 Japan
| | - Naoto Shirahata
- Graduate School of Chemical Sciences and Engineering, Hokkaido University Sapporo 060-0814 Japan
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS) 1-1 Namiki Tsukuba 305-0044 Japan
- Department of Physics, Chuo University 1-13-27 Kasuga Bunkyo Tokyo 112-8551 Japan
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20
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Bahmani Jalali H, De Trizio L, Manna L, Di Stasio F. Indium arsenide quantum dots: an alternative to lead-based infrared emitting nanomaterials. Chem Soc Rev 2022; 51:9861-9881. [PMID: 36408788 PMCID: PMC9743785 DOI: 10.1039/d2cs00490a] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/11/2022] [Indexed: 11/22/2022]
Abstract
Colloidal quantum dots (QDs) emitting in the infrared (IR) are promising building blocks for numerous photonic, optoelectronic and biomedical applications owing to their low-cost solution-processability and tunable emission. Among them, lead- and mercury-based QDs are currently the most developed materials. Yet, due to toxicity issues, the scientific community is focusing on safer alternatives. In this regard, indium arsenide (InAs) QDs are one of the best candidates as they can absorb and emit light in the whole near infrared spectral range and they are RoHS-compliant, with recent trends suggesting that there is a renewed interest in this class of materials. This review focuses on colloidal InAs QDs and aims to provide an up-to-date overview spanning from their synthesis and surface chemistry to post-synthesis modifications. We provide a comprehensive overview from initial synthetic methods to the most recent developments on the ability to control the size, size distribution, electronic properties and carrier dynamics. Then, we describe doping and alloying strategies applied to InAs QDs as well as InAs based heterostructures. Furthermore, we present the state-of-the-art applications of InAs QDs, with a particular focus on bioimaging and field effect transistors. Finally, we discuss open challenges and future perspectives.
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Affiliation(s)
- Houman Bahmani Jalali
- Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy.
- Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Luca De Trizio
- Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Liberato Manna
- Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Francesco Di Stasio
- Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy.
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21
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Effect of the surface coverage of an alkyl carboxylic acid monolayer on waterborne and cellular uptake behaviors for silicon quantum dots. Sci Rep 2022; 12:17211. [PMID: 36241686 PMCID: PMC9568572 DOI: 10.1038/s41598-022-21698-z] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/25/2022] [Accepted: 09/30/2022] [Indexed: 01/06/2023] Open
Abstract
This article reports the development of highly waterborne silicon quantum dots (Si QDs) terminated with a reactive group for grafting of biomolecules. Hydrogen-terminated QDs were prepared by thermal disproportionation of amorphous hydrogen silsesquioxane derived from triethoxysilane followed by hydrofluoric etching. Next, the hydrogenated Si surfaces were exposed to 10-undecenoic acid at different temperatures in Ar atmosphere, yielding the termination of the QDs with a carboxyl group. The thermal hydrosilylation of 10-undecenoic acid yielded the termination of the QDs with a carboxyl group. An increase in molecular coverage of an undecanoic acid (UA) monolayer resulted in both the enhanced increase of zeta-potential in a negative direction for a greater water-dispersity and the increase of absolute quantum yield (QY) of photoluminescence (PL). PLQY improved for ~ 1% to 26% with increasing UA coverage. We assessed the molecular interaction between the UA-SiQDs and HeLa cells by means of cellular uptake experiments using the QDs with different UA coverages. Results showed that the QDs with the highest dispersity in water were not internalized in the cells under confocal fluorescence microscopic observation. In contrast, the QDs with lower coverage of UA monolayer were internalized by endocytosis when incubated with HeLa cells. This contrasting observation opens the possibility of successfully preparing carboxy-capped SiQDs that do not allow cellular uptake but are targeted to specific cells by appropriate conjugation with biomolecules.
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22
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Gupta A, Ondry JC, Chen M, Hudson MH, Coropceanu I, Sarma NA, Talapin DV. Diffusion-Limited Kinetics of Isovalent Cation Exchange in III-V Nanocrystals Dispersed in Molten Salt Reaction Media. NANO LETTERS 2022; 22:6545-6552. [PMID: 35952655 PMCID: PMC9413424 DOI: 10.1021/acs.nanolett.2c01699] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2022] [Revised: 08/06/2022] [Indexed: 06/15/2023]
Abstract
The goal of this work is to determine the kinetic factors that govern isovalent cation exchange in III-V colloidal quantum dots using molten salts as the solvent and cation source. We focus on the reactions of InP + GaI3→ In1-xGaxP and InAs + GaI3→ In1-xGaxAs to create technologically important ternary III-V phases. We find that the molten salt reaction medium causes the transformation of nearly spherical InP nanocrystals to tetrahedron-shaped In1-xGaxP nanocrystals. Furthermore, we determine that the activation energy for the cation exchange reaction is 0.9 eV for incorporation of Ga into InP and 1.2 eV for incorporation of Ga into InAs, both much lower than the measured values in bulk semiconductors. Next, we use powder XRD simulations to constrain our understanding of the structure of the In1-xGaxP nanocrystals. Together our results reveal several important features of molten salt-mediated cation exchange and provide guidance for future development of these materials.
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Affiliation(s)
- Aritrajit Gupta
- Department
of Chemistry, James Franck Institute, and Pritzker School of Molecular
Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Justin C. Ondry
- Department
of Chemistry, James Franck Institute, and Pritzker School of Molecular
Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Min Chen
- Department
of Chemistry, James Franck Institute, and Pritzker School of Molecular
Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Margaret H. Hudson
- Department
of Chemistry, James Franck Institute, and Pritzker School of Molecular
Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Igor Coropceanu
- Department
of Chemistry, James Franck Institute, and Pritzker School of Molecular
Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Nivedina A. Sarma
- Department
of Chemistry, James Franck Institute, and Pritzker School of Molecular
Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Dmitri V. Talapin
- Department
of Chemistry, James Franck Institute, and Pritzker School of Molecular
Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Center
for Nanoscale Materials, Argonne National
Laboratory, Argonne, Illinois 60439, United
States
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23
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Bootharaju MS, Baek W, Deng G, Singh K, Voznyy O, Zheng N, Hyeon T. Structure of a subnanometer-sized semiconductor Cd14Se13 cluster. Chem 2022. [DOI: 10.1016/j.chempr.2022.06.025] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
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24
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Zhu D, Bellato F, Bahmani Jalali H, Di Stasio F, Prato M, Ivanov YP, Divitini G, Infante I, De Trizio L, Manna L. ZnCl 2 Mediated Synthesis of InAs Nanocrystals with Aminoarsine. J Am Chem Soc 2022; 144:10515-10523. [PMID: 35648676 PMCID: PMC9204758 DOI: 10.1021/jacs.2c02994] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
![]()
The most developed
approaches for the synthesis of InAs nanocrystals
(NCs) rely on pyrophoric, toxic, and not readily available tris-trimethylsilyl
(or tris-trimethylgermil) arsine precursors. Less toxic and commercially
available chemicals, such as tris(dimethylamino)arsine, have recently
emerged as alternative As precursors. Nevertheless, InAs NCs made
with such compounds need to be further optimized in terms of size
distribution and optical properties in order to meet the standard
reached with tris-trimethylsilyl arsine. To this aim, in this work
we investigated the role of ZnCl2 used as an additive in
the synthesis of InAs NCs with tris(dimethylamino)arsine and alane N,N-dimethylethylamine as the reducing
agent. We discovered that ZnCl2 helps not only to improve
the size distribution of InAs NCs but also to passivate their surface
acting as a Z-type ligand. The presence of ZnCl2 on the
surface of the NCs and the excess of Zn precursor used in the synthesis
enable the subsequent in situ growth of a ZnSe shell,
which is realized by simply adding the Se precursor to the crude reaction
mixture. The resulting InAs@ZnSe core@shell NCs exhibit photoluminescence
emission at ∼860 nm with a quantum yield as high as 42±4%, which is a record for such heterostructures,
given the relatively high mismatch (6%) between InAs and ZnSe. Such
bright emission was ascribed to the formation, under our peculiar
reaction conditions, of an In–Zn–Se intermediate layer
between the core and the shell, as indicated by X-ray photoelectron
spectroscopy and elemental analyses, which helps to release the strain
between the two materials.
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Affiliation(s)
| | - Fulvio Bellato
- Dipartimento di Chimica e Chimica Industriale, Università di Genova, 16146 Genova, Italy
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25
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Ruiz
Alvarado IA, Schmidt WG. Water/InP(001) from Density Functional Theory. ACS OMEGA 2022; 7:19355-19364. [PMID: 35722024 PMCID: PMC9202284 DOI: 10.1021/acsomega.2c00948] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/16/2022] [Accepted: 05/06/2022] [Indexed: 06/15/2023]
Abstract
The interface between water and the In-rich InP(001) surface is studied by density functional theory with water coverage ranging from single molecules to multiple overlayers. Single molecules attach preferably to three-fold coordinated surface In atoms. Water dissociation is energetically favorable but hindered by an energy barrier that decreases with increasing water coverage. There is an attractive interaction between InP adsorbed water molecules that leads to the formation of molecular clusters and complete water films for water-rich preparation conditions. Water films on InP are stabilized by anchoring to surface-bonded hydroxyl groups. With increasing thickness, the water films resemble the structural properties of ice Ih. The oxygen and hydrogen evolution reactions on InP are characterized by overpotentials of the order of 1.7-1.8 and 0.2-0.3 eV, respectively. While the calculated bulk positions of the InP band edges are outside the range of the redox potentials for oxygen and hydrogen evolution within local DFT, the situation is different at the actual interface: Here, the interface dipole lifts the InP valence band maximum above the redox potential for oxygen evolution and favors hydrogen evolution.
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Affiliation(s)
| | - Wolf Gero Schmidt
- Lehrstuhl für Theoretische
Materialphysik, Universität Paderborn, 33095 Paderborn, Germany
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26
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Leemans J, Pejović V, Georgitzikis E, Minjauw M, Siddik AB, Deng Y, Kuang Y, Roelkens G, Detavernier C, Lieberman I, Malinowski PE, Cheyns D, Hens Z. Colloidal III-V Quantum Dot Photodiodes for Short-Wave Infrared Photodetection. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200844. [PMID: 35398996 PMCID: PMC9189642 DOI: 10.1002/advs.202200844] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/11/2022] [Revised: 03/10/2022] [Indexed: 06/14/2023]
Abstract
Short-wave infrared (SWIR) image sensors based on colloidal quantum dots (QDs) are characterized by low cost, small pixel pitch, and spectral tunability. Adoption of QD-SWIR imagers is, however, hampered by a reliance on restricted elements such as Pb and Hg. Here, QD photodiodes, the central element of a QD image sensor, made from non-restricted In(As,P) QDs that operate at wavelengths up to 1400 nm are demonstrated. Three different In(As,P) QD batches that are made using a scalable, one-size-one-batch reaction and feature a band-edge absorption at 1140, 1270, and 1400 nm are implemented. These QDs are post-processed to obtain In(As,P) nanocolloids stabilized by short-chain ligands, from which semiconducting films of n-In(As,P) are formed through spincoating. For all three sizes, sandwiching such films between p-NiO as the hole transport layer and Nb:TiO2 as the electron transport layer yields In(As,P) QD photodiodes that exhibit best internal quantum efficiencies at the QD band gap of 46±5% and are sensitive for SWIR light up to 1400 nm.
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Affiliation(s)
- Jari Leemans
- Physics and Chemistry of NanostructuresGhent UniversityKrijgslaan 281‐S3Gent9000Belgium
| | | | | | - Matthias Minjauw
- Department of Solid State ScienceGhent UniversityKrijgslaan 281‐S1Gent9000Belgium
| | | | - Yu‐Hao Deng
- Physics and Chemistry of NanostructuresGhent UniversityKrijgslaan 281‐S3Gent9000Belgium
| | | | - Gunther Roelkens
- Photonics Research GroupGhent UniversityTechnologiepark‐Zwijnaarde 126Gent9052Belgium
| | | | | | | | | | - Zeger Hens
- Physics and Chemistry of NanostructuresGhent UniversityKrijgslaan 281‐S3Gent9000Belgium
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27
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Wang W, Zhang M, Pan Z, Biesold GM, Liang S, Rao H, Lin Z, Zhong X. Colloidal Inorganic Ligand-Capped Nanocrystals: Fundamentals, Status, and Insights into Advanced Functional Nanodevices. Chem Rev 2021; 122:4091-4162. [PMID: 34968050 DOI: 10.1021/acs.chemrev.1c00478] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Colloidal nanocrystals (NCs) are intriguing building blocks for assembling various functional thin films and devices. The electronic, optoelectronic, and thermoelectric applications of solution-processed, inorganic ligand (IL)-capped colloidal NCs are especially promising as the performance of related devices can substantially outperform their organic ligand-capped counterparts. This in turn highlights the significance of preparing IL-capped NC dispersions. The replacement of initial bulky and insulating ligands capped on NCs with short and conductive inorganic ones is a critical step in solution-phase ligand exchange for preparing IL-capped NCs. Solution-phase ligand exchange is extremely appealing due to the highly concentrated NC inks with completed ligand exchange and homogeneous ligand coverage on the NC surface. In this review, the state-of-the-art of IL-capped NCs derived from solution-phase inorganic ligand exchange (SPILE) reactions are comprehensively reviewed. First, a general overview of the development and recent advancements of the synthesis of IL-capped colloidal NCs, mechanisms of SPILE, elementary reaction principles, surface chemistry, and advanced characterizations is provided. Second, a series of important factors in the SPILE process are offered, followed by an illustration of how properties of NC dispersions evolve after ILE. Third, surface modifications of perovskite NCs with use of inorganic reagents are overviewed. They are necessary because perovskite NCs cannot withstand polar solvents or undergo SPILE due to their soft ionic nature. Fourth, an overview of the research progresses in utilizing IL-capped NCs for a wide range of applications is presented, including NC synthesis, NC solid and film fabrication techniques, field effect transistors, photodetectors, photovoltaic devices, thermoelectric, and photoelectrocatalytic materials. Finally, the review concludes by outlining the remaining challenges in this field and proposing promising directions to further promote the development of IL-capped NCs in practical application in the future.
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Affiliation(s)
- Wenran Wang
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
| | - Meng Zhang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Zhenxiao Pan
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
| | - Gill M Biesold
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Shuang Liang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Huashang Rao
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
| | - Zhiqun Lin
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Xinhua Zhong
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
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28
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Mourdikoudis S, Antonaropoulos G, Antonatos N, Rosado M, Storozhuk L, Takahashi M, Maenosono S, Luxa J, Sofer Z, Ballesteros B, Thanh NTK, Lappas A. Heat-Up Colloidal Synthesis of Shape-Controlled Cu-Se-S Nanostructures-Role of Precursor and Surfactant Reactivity and Performance in N 2 Electroreduction. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:3369. [PMID: 34947718 PMCID: PMC8707546 DOI: 10.3390/nano11123369] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/24/2021] [Revised: 12/01/2021] [Accepted: 12/09/2021] [Indexed: 11/16/2022]
Abstract
Copper selenide-sulfide nanostructures were synthesized using metal-organic chemical routes in the presence of Cu- and Se-precursors as well as S-containing compounds. Our goal was first to examine if the initial Cu/Se 1:1 molar proportion in the starting reagents would always lead to equiatomic composition in the final product, depending on other synthesis parameters which affect the reagents reactivity. Such reaction conditions were the types of precursors, surfactants and other reagents, as well as the synthesis temperature. The use of 'hot-injection' processes was avoided, focusing on 'non-injection' ones; that is, only heat-up protocols were employed, which have the advantage of simple operation and scalability. All reagents were mixed at room temperature followed by further heating to a selected high temperature. It was found that for samples with particles of bigger size and anisotropic shape the CuSe composition was favored, whereas particles with smaller size and spherical shape possessed a Cu2-xSe phase, especially when no sulfur was present. Apart from elemental Se, Al2Se3 was used as an efficient selenium source for the first time for the acquisition of copper selenide nanostructures. The use of dodecanethiol in the presence of trioctylphosphine and elemental Se promoted the incorporation of sulfur in the materials crystal lattice, leading to Cu-Se-S compositions. A variety of techniques were used to characterize the formed nanomaterials such as XRD, TEM, HRTEM, STEM-EDX, AFM and UV-Vis-NIR. Promising results, especially for thin anisotropic nanoplates for use as electrocatalysts in nitrogen reduction reaction (NRR), were obtained.
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Affiliation(s)
- Stefanos Mourdikoudis
- Biophysics Group, Department of Physics and Astronomy, University College London, London WC1E 6BT, UK;
- UCL Healthcare Biomagnetics and Nanomaterials Laboratories, 21 Albemarle Street, London W1S 4BS, UK
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 16628 Prague, Czech Republic; (N.A.); (J.L.)
| | - George Antonaropoulos
- Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, Vassilika Vouton, 71110 Heraklion, Greece;
- Department of Chemistry, University of Crete, Voutes, 71003 Heraklion, Greece
| | - Nikolas Antonatos
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 16628 Prague, Czech Republic; (N.A.); (J.L.)
| | - Marcos Rosado
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and the Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain;
| | - Liudmyla Storozhuk
- Biophysics Group, Department of Physics and Astronomy, University College London, London WC1E 6BT, UK;
- UCL Healthcare Biomagnetics and Nanomaterials Laboratories, 21 Albemarle Street, London W1S 4BS, UK
| | - Mari Takahashi
- School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi 923-1292, Ishikawa, Japan; (M.T.); (S.M.)
| | - Shinya Maenosono
- School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi 923-1292, Ishikawa, Japan; (M.T.); (S.M.)
| | - Jan Luxa
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 16628 Prague, Czech Republic; (N.A.); (J.L.)
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 16628 Prague, Czech Republic; (N.A.); (J.L.)
| | - Belén Ballesteros
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and the Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain;
| | - Nguyen Thi Kim Thanh
- Biophysics Group, Department of Physics and Astronomy, University College London, London WC1E 6BT, UK;
- UCL Healthcare Biomagnetics and Nanomaterials Laboratories, 21 Albemarle Street, London W1S 4BS, UK
| | - Alexandros Lappas
- Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, Vassilika Vouton, 71110 Heraklion, Greece;
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Choi MJ, Sagar LK, Sun B, Biondi M, Lee S, Najjariyan AM, Levina L, García de Arquer FP, Sargent EH. Ligand Exchange at a Covalent Surface Enables Balanced Stoichiometry in III-V Colloidal Quantum Dots. NANO LETTERS 2021; 21:6057-6063. [PMID: 34250796 DOI: 10.1021/acs.nanolett.1c01286] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
III-V colloidal quantum dots (CQDs) are promising semiconducting materials for optoelectronic applications; however, their strong covalent character requires a distinct approach to surface management compared with widely investigated II-VI and IV-VI CQDs-dots, which by contrast are characterized by an ionic nature. Here we show stoichiometric reconstruction in InAs CQDs by ligand exchange. In particular, we find that indium-carboxylate ligands, which passivate as-synthesized InAs CQDs and are responsible for In-rich surfaces, can be replaced by anionic ligands such as thiols. This enables the production of inks consisting of balanced-stoichiomety CQDs; this is distinct from what is observed in II-VI and IV-VI CQDs, in which thiols replace carboxylates. The approach enables the implementation of InAs CQD solids as the active layer in photodiode detectors that exhibit an external quantum efficiency of 36% at 930 nm and a photoresponse time of 65 ns, which is 4 times shorter than that of reference PbS CQD devices.
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Affiliation(s)
- Min-Jae Choi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
- Department of Chemical and Biochemical Engineering, Dongguk University, Seoul 04620, Republic of Korea
| | - Laxmi Kishore Sagar
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Bin Sun
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Margherita Biondi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Seungjin Lee
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Amin Morteza Najjariyan
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Larissa Levina
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - F Pelayo García de Arquer
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
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30
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Saha A, Konstantatos G. Ag 2ZnSnS 4-ZnS core-shell colloidal quantum dots: a near-infrared luminescent material based on environmentally friendly elements. JOURNAL OF MATERIALS CHEMISTRY. C 2021; 9:5682-5688. [PMID: 33996096 PMCID: PMC8101413 DOI: 10.1039/d1tc00421b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2021] [Accepted: 03/26/2021] [Indexed: 05/30/2023]
Abstract
Low cost, multinary colloidal quantum dots (QDs) based on environmentally friendly elements, with bright, narrow-width, tunable near-infrared (NIR) luminescence are promising alternatives to Cd and Pb chalcogenide QDs for in vivo bio-imaging, LED and sensing applications. Herein, we demonstrate Pb/Cd free solution-processed colloidal luminescent Ag2ZnSnS4-ZnS (AZTS-ZnS) core-shell QDs with precise control over the ZnS shell thickness and thereby its optical properties. Unlike indium based multinary (I-III-VI group) core-shell QDs these nanocrystals show a narrow photoluminescence (PL) full width at half maximum (fwhm) of 105-110 meV in the first NIR window. By monitoring the starting AZTS core size, we achieve tunable emission over a small NIR window in these QDs with the best PL quantum yield (PLQY) of 17.4%.
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Affiliation(s)
- Avijit Saha
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology 08860 Castelldefels (Barcelona) Spain
| | - Gerasimos Konstantatos
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology 08860 Castelldefels (Barcelona) Spain
- ICREA-Institució Catalana de Recerca i Estudis Avancats, Passeig Lluís Companys 23 08010 Barcelona Spain
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31
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Leemans J, Dümbgen KC, Minjauw MM, Zhao Q, Vantomme A, Infante I, Detavernier C, Hens Z. Acid–Base Mediated Ligand Exchange on Near-Infrared Absorbing, Indium-Based III–V Colloidal Quantum Dots. J Am Chem Soc 2021; 143:4290-4301. [DOI: 10.1021/jacs.0c12871] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2023]
Affiliation(s)
- Jari Leemans
- Physics and Chemistry of Nanostructures, Ghent University, 9000 Gent, Belgium
- Center for Nano and Biophotonics, Ghent University, 9000 Gent, Belgium
| | - Kim C. Dümbgen
- Physics and Chemistry of Nanostructures, Ghent University, 9000 Gent, Belgium
- Center for Nano and Biophotonics, Ghent University, 9000 Gent, Belgium
| | - Matthias M. Minjauw
- Department of Solid State Sciences, COCOON group, Ghent University, 9000 Gent, Belgium
| | - Qiang Zhao
- Institute for Nuclear and Radiation Physics, KU Leuven, Celestijnenlaan 200d, B-3001 Leuven, Belgium
| | - André Vantomme
- Institute for Nuclear and Radiation Physics, KU Leuven, Celestijnenlaan 200d, B-3001 Leuven, Belgium
| | - Ivan Infante
- Nanochemistry Department, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | | | - Zeger Hens
- Physics and Chemistry of Nanostructures, Ghent University, 9000 Gent, Belgium
- Center for Nano and Biophotonics, Ghent University, 9000 Gent, Belgium
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32
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Kagan CR, Bassett LC, Murray CB, Thompson SM. Colloidal Quantum Dots as Platforms for Quantum Information Science. Chem Rev 2020; 121:3186-3233. [DOI: 10.1021/acs.chemrev.0c00831] [Citation(s) in RCA: 49] [Impact Index Per Article: 12.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2023]
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33
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Busatto S, Ruiter MD, Jastrzebski JTBH, Albrecht W, Pinchetti V, Brovelli S, Bals S, Moret ME, de Mello Donega C. Luminescent Colloidal InSb Quantum Dots from In Situ Generated Single-Source Precursor. ACS NANO 2020; 14:13146-13160. [PMID: 32915541 PMCID: PMC7596776 DOI: 10.1021/acsnano.0c04744] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Despite recent advances, the synthesis of colloidal InSb quantum dots (QDs) remains underdeveloped, mostly due to the lack of suitable precursors. In this work, we use Lewis acid-base interactions between Sb(III) and In(III) species formed at room temperature in situ from commercially available compounds (viz., InCl3, Sb[NMe2]3 and a primary alkylamine) to obtain InSb adduct complexes. These complexes are successfully used as precursors for the synthesis of colloidal InSb QDs ranging from 2.8 to 18.2 nm in diameter by fast coreduction at sufficiently high temperatures (≥230 °C). Our findings allow us to propose a formation mechanism for the QDs synthesized in our work, which is based on a nonclassical nucleation event, followed by aggregative growth. This yields ensembles with multimodal size distributions, which can be fractionated in subensembles with relatively narrow polydispersity by postsynthetic size fractionation. InSb QDs with diameters below 7.0 nm have the zinc blende crystal structure, while ensembles of larger QDs (≥10 nm) consist of a mixture of wurtzite and zinc blende QDs. The QDs exhibit photoluminescence with small Stokes shifts and short radiative lifetimes, implying that the emission is due to band-edge recombination and that the direct nature of the bandgap of bulk InSb is preserved in InSb QDs. Finally, we constructed a sizing curve correlating the peak position of the lowest energy absorption transition with the QD diameters, which shows that the band gap of colloidal InSb QDs increases with size reduction following a 1/d dependence.
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Affiliation(s)
- Serena Busatto
- Condensed
Matter and Interfaces, Debye Institute for Nanomaterials Science, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
| | - Mariska de Ruiter
- Condensed
Matter and Interfaces, Debye Institute for Nanomaterials Science, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
| | - Johann T. B. H. Jastrzebski
- Organic
Chemistry and Catalysis, Debye Institute for Nanomaterials Science, Utrecht University, Universiteitsweg 99, 3584 CG Utrecht, The Netherlands
| | - Wiebke Albrecht
- Electron
Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - Valerio Pinchetti
- Dipartimento
di Scienza dei Materiali, Università
degli Studi di Milano Bicocca, via Roberto Cozzi 55, I-20125 Milano, Italy
| | - Sergio Brovelli
- Dipartimento
di Scienza dei Materiali, Università
degli Studi di Milano Bicocca, via Roberto Cozzi 55, I-20125 Milano, Italy
| | - Sara Bals
- Electron
Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - Marc-Etienne Moret
- Organic
Chemistry and Catalysis, Debye Institute for Nanomaterials Science, Utrecht University, Universiteitsweg 99, 3584 CG Utrecht, The Netherlands
| | - Celso de Mello Donega
- Condensed
Matter and Interfaces, Debye Institute for Nanomaterials Science, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
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34
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Ginterseder M, Franke D, Perkinson CF, Wang L, Hansen EC, Bawendi MG. Scalable Synthesis of InAs Quantum Dots Mediated through Indium Redox Chemistry. J Am Chem Soc 2020; 142:4088-4092. [PMID: 32073841 DOI: 10.1021/jacs.9b12350] [Citation(s) in RCA: 24] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Next-generation optoelectronic applications centered in the near-infrared (NIR) and short-wave infrared (SWIR) wavelength regimes require high-quality materials. Among these materials, colloidal InAs quantum dots (QDs) stand out as an infrared-active candidate material for biological imaging, lighting, and sensing applications. Despite significant development of their optical properties, the synthesis of InAs QDs still routinely relies on hazardous, commercially unavailable precursors. Herein, we describe a straightforward single hot injection procedure revolving around In(I)Cl as the key precursor. Acting as a simultaneous reducing agent and In source, In(I)Cl smoothly reacts with a tris(amino)arsenic precursor to yield colloidal InAs quantitatively and at gram scale. Tuning the reaction temperature produces InAs cores with a first excitonic absorption feature in the range of 700-1400 nm. A dynamic disproportionation equilibrium between In(I), In metal, and In(III) opens up additional flexibility in precursor selection. CdSe shell growth on the produced cores enhances their optical properties, furnishing particles with center emission wavelengths between 1000 and 1500 nm and narrow photoluminescence full-width at half-maximum (FWHM) of about 120 meV throughout. The simplicity, scalability, and tunability of the disclosed precursor platform are anticipated to inspire further research on In-based colloidal QDs.
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Affiliation(s)
- Matthias Ginterseder
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Daniel Franke
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Collin F Perkinson
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Lili Wang
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Eric C Hansen
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Moungi G Bawendi
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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