Low-temperature in situ large strain plasticity of ceramic SiC nanowires and its atomic-scale mechanism

Electron Microscope Study of the Pressure-Induced Phase Transformation and Microstructure Change of TiO2 Nanocrystals

Microstructure transformation of materials under compression is crucial to understanding their high-pressure phase transformation. However, direct observation of the microstructure of compressive materials is a considerable challenge, which impedes the understanding of the relations among phase transformation, microstructure, and material properties. In this study, we used transmission Kikuchi diffraction and transmission electron microscopy to intuitively characterize pressure-induced phase transformation and microstructure of TiO2. We observed the changes of twin boundaries with increasing pressure and intermediate phase TiO2-I of anatase transformed into TiO2-II (α-PbO2 phase) for the first time. The following changes occur during this transformation: anatase (diameter of ∼100 nm) → anatase twins 60° along the [110] zone axis → intermediate TiO2-I twins 60° along the [010] zone axis → TiO2-II twins 90° along the [010] zone axis. These results directly reveal the crystallographic relation among these structures, enhancing our understanding of the phase transformation in TiO2 nanocrystals.

Influence of the Tensile Strain on Electron Transport of Ultra-Thin SiC Nanowires

The influence of nanomechanical tensile behavior on electron transport is especially interesting for ultra-thin SiC nanowires (NWs) with different diameters. Our studies theoretically show that these NWs can hold stable electron transmission in some strain ranges and that stretching can enhance the electron transmission around the Fermi level (EF) at the strains over 0.5 without fracture for a single-atom SiC chain and at the strains not over 0.5 for thicker SiC NWs. For each size of SiC NW, the tensile strain has a tiny effect on the number of device density of states (DDOSs) peaks but can increase the values. Freshly broken SiC NWs also show certain values of DDOSs around EF. The maximum DDOS increases significantly with the diameter, but interestingly, the DDOS at EF shows little difference among the three sizes of devices in the late stage of the stretching. Essentially, high electron transmission is influenced by high DDOSs and delocalized electronic states. Analysis of electron localization functions (ELFs) indicates that appropriate tensile stress can promote continuous electronic distributions to contribute electron transport, while excessively large stretching deformation of SiC NWs would split electronic distributions and consequently hinder the movement of electrons. These results provide strong theoretical support for the use of ultra-thin SiC NWs in nano-sensors for functional and controllable electronic devices.

Aerogels for Thermal Protection and Their Application in Aerospace

With the continuous development of the world's aerospace industry, countries have put forward higher requirements for thermal protection materials for aerospace vehicles. As a nano porous material with ultra-low thermal conductivity, aerogel has attracted more and more attention in the thermal insulation application of aerospace vehicles. At present, the summary of aerogel used in aerospace thermal protection applications is not comprehensive. Therefore, this paper summarizes the research status of various types of aerogels for thermal protection (oxide aerogels, organic aerogels, etc.), summarizes the hot issues in the current research of various types of aerogels for thermal protection, and puts forward suggestions for the future development of various aerogels. For oxide aerogels, it is necessary to further increase their use temperature and inhibit the sintering of high-temperature resistant components. For organic aerogels, it is necessary to focus on improving the anti-ablation, thermal insulation, and mechanical properties in long-term aerobic high-temperature environments, and on this basis, find cheap raw materials to reduce costs. For carbon aerogels, it is necessary to further explore the balanced relationship between oxidation resistance, mechanics, and thermal insulation properties of materials. The purpose of this paper is to provide a reference for the further development of more efficient and reliable aerogel materials for aerospace applications in the future.

Silicon Carbide Nanostructures as Potential Carbide Material for Electrochemical Supercapacitors: A Review

Silicon carbide (SiC) is a very promising carbide material with various applications such as electrochemical supercapacitors, photocatalysis, microwave absorption, field-effect transistors, and sensors. Due to its enticing advantages of high thermal stability, outstanding chemical stability, high thermal conductivity, and excellent mechanical behavior, it is used as a potential candidate in various fields such as supercapacitors, water-splitting, photocatalysis, biomedical, sensors, and so on. This review mainly describes the various synthesis techniques of nanostructured SiC (0D, 1D, 2D, and 3D) and its properties. Thereafter, the ongoing research trends in electrochemical supercapacitor electrodes are fully excavated. Finally, the outlook of future research directions, key obstacles, and possible solutions are emphasized.

Giant room temperature compression and bending in ferroelectric oxide pillars

Plastic deformation in ceramic materials is normally only observed in nanometre-sized samples. However, we have observed high levels of plasticity (>50% plastic strain) and excellent elasticity (6% elastic strain) in perovskite oxide Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3, under compression along <100>pc pillars up to 2.1 μm in diameter. The extent of this deformation is much higher than has previously been reported for ceramic materials, and the sample size at which plasticity is observed is almost an order of magnitude larger. Bending tests also revealed over 8% flexural strain. Plastic deformation occurred by slip along {110} <1[Formula: see text]0 > . Calculations indicate that the resulting strain gradients will give rise to giant flexoelectric polarization. First principles models predict that a high concentration of oxygen vacancies weaken the covalent/ionic bonds, giving rise to the unexpected plasticity. Mechanical testing on oxygen vacancies-rich Mn-doped Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 confirmed this prediction. These findings will facilitate the design of plastic ceramic materials and the development of flexoelectric-based nano-electromechanical systems.

Strain-mediated bandgap engineering of straight and bent semiconductor nanowires

Accurate simulation of semiconductor nanowires (NWs) under strain is challenging, especially for bent NWs. Here, we propose a simple yet efficient unit-cell model to simulate strain-mediated bandgap modulation in both straight and bent NWs. This is with consideration that uniaxlly bent NWs experience continuous compressive and tensile strains through their cross-sections. A systematic investigation of a series of III-V and II-VI semiconductors NWs in both wurtzite and zinc blende polytypes is performed using hybrid density functional theory methods. The results reveal three common trend in bandgap evolution upon application of strain. Existing experimental measurements corroborate with our predictions concerning bandgap evolution as well as direct-indirect bandgap transitions upon strain. By examining the variation of previous theoretical studies, our result further highlights the significance of geometrical relaxtion in NW simulation. This simplified model is expected to be applicable to investigations of the electronic, optoelectronic, and sensorial properties of all semiconductor NWs.

Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring

Semiconductor nanowires are widely considered as the building blocks that revolutionized many areas of nanosciences and nanotechnologies. The unique features in nanowires, including high electron transport, excellent mechanical robustness, large surface area, and capability to engineer their intrinsic properties, enable new classes of nanoelectromechanical systems (NEMS). Wide bandgap (WBG) semiconductors in the form of nanowires are a hot spot of research owing to the tremendous possibilities in NEMS, particularly for environmental monitoring and energy harvesting. This article presents a comprehensive overview of the recent progress on the growth, properties and applications of silicon carbide (SiC), group III-nitrides, and diamond nanowires as the materials of choice for NEMS. It begins with a snapshot on material developments and fabrication technologies, covering both bottom-up and top-down approaches. A discussion on the mechanical, electrical, optical, and thermal properties is provided detailing the fundamental physics of WBG nanowires along with their potential for NEMS. A series of sensing and electronic devices particularly for environmental monitoring is reviewed, which further extend the capability in industrial applications. The article concludes with the merits and shortcomings of environmental monitoring applications based on these classes of nanowires, providing a roadmap for future development in this fast-emerging research field.

Self-healing on mismatched fractured composite surfaces of SiC with a diameter of 180 nm

Self-healing on fractured surfaces of silicon carbide (SiC) is highly desirable, to avoid the catastrophic failure of high-performance devices working at extreme environments. Nevertheless, self-healing on a fractured surface of an amorphous and crystalline (AAC) composite structure of a brittle nanowire (NW) has not been demonstrated. In this study, self-healing is demonstrated on mismatched fractured surfaces of the AAC composite structure of a brittle solid for a SiC NW with a diameter of 187 nm. Fracture strength is 10.18 GPa for the AAC structure, recovering 11.7% after self-healing on its mismatched fractured surfaces. To the best of our knowledge, we firstly report the self-healing on mismatched fractured surfaces of the AAC structure for a brittle NW. This is a breakthrough of the previous prediction that self-healing could not be realized on a brittle NW with a diameter over 150 nm. A growth of 3 nm was found after self-healing on the gap induced by mismatched fractured surfaces, which is different from previous reports for pure amorphous and monocrystalline brittle NWs. To reduce the potential energy, coherent rebonding and debonding were performed to realize the atomic migration to fill the gap, resulting in the growth of gap of 3 nm to perform self-healing. Our findings shed light on the potential of self-healing for design and fabrication of next-generation high-performance SiC devices used in the vacuum and aerospace industries.

Tunable Mechanical Property and Structural Transition of Silicon Nitride Nanowires Induced by Focused Ion Beam Irradiation

Tailoring mechanical properties of the nanowire (NW) with intricate composite structure helps to design nanodevices with novel functionalities. Here, we performed in situ tensile deformation electron microscopy for the evaluation of the mechanical properties of the focused ion beam (FIB) irradiated silicon nitride (Si₃N₄) nanowires (NWs). Young's modulus of the FIB-fabricated NWs was mediated between the range of 522 and 65 GPa by modifying the shell thickness of the core-shell structure. The ion-beam-induced amorphization is found to induce the structural transition from an utter crystalline state to a composite NW with an amorphous shell, which results in a brittle-to-ductile transition and an unexpected plastic deformation. These results have practical implications for optimizing nanostructures with the desired mechanical properties, which are of fundamental relevance in designing and fabricating nanomechanical devices.

Strong structural occupation ratio effect on mechanical properties of silicon carbide nanowires

Materials' mechanical properties highly depend on their internal structures. Designing novel structure is an effective route to improve materials' performance. One-dimensional disordered (ODD) structure is a kind of particular structure in silicon carbide (SiC), which highly affects its mechanical properties. Herein, we show that SiC nanowires (NWs) containing ODD structure (with an occupation ratio of 32.6%) exhibit ultrahigh tensile strength and elastic strain, which are up to 13.7 GPa and 12% respectively, approaching the ideal theoretical limit. The ODD structural occupation ratio effect on mechanical properties of SiC NWs has been systematically studied and a saddle shaped tendency for the strength versus occupation ratio is firstly revealed. The strength increases with the increase of the ODD occupation ratio but decreases when the occupation ratio exceeds a critical value of ~ 32.6%, micro twins appear in the ODD region when the ODD segment increases and soften the ODD segment, finally results in a decrease of the strength.

Tunable Anelasticity in Amorphous Si Nanowires

In situ bending tests of amorphous Si nanowires (a-Si NWs) found different elastic behavior depending on whether they were straight or curved to begin with. The axially straight NWs exhibit pure elastic deformation; however, the axially curved NWs exhibit obvious anelastic behavior when they are bent in the direction of original curvature. On the basis of STEM-EELS analysis, we propose that the underlying mechanism for this anelastic behavior is a bond-switching assisted redistribution of the nonuniform density (structure) in the curved NWs under the inhomogeneous stress field. This mechanism was further supported by the fact that the originally straight a-Si NWs also display similar anelasticity with the as-grown curved NWs after focused ion beam irradiation that can cause nonuniform structure distribution. As compared to what has been reported in other 1D materials, the anelasticity of a-Si NWs can be tuned by modifying their morphology, controlling the loading direction, or irradiating them via ion beam. Our findings suggest that a-Si NWs could be a promising material in the nanoscale damping systems, especially the semiconductor nanodevices.

Tunable nanomechanical performance regimes in ceramic nanowires

At the macroscopic size regime, ceramic materials exhibit brittle fracture and catastrophic failure when they are subjected to mechanical loads that exceed their characteristic strength. In this report, we present recoverable plasticity in alpha-phase, potassium stabilized manganese dioxide nanowire (α-K_0.13MnO₂ NW) crystals when they are subjected to atomic force microscopy (AFM) based three-point bending tests at very low loading rates. The force-deflection curves and AFM scans obtained from these measurements reveal yielding and extended plasticity in the NWs during the loading process, while the large plastic deformation is recovered spontaneously during the unloading process. However, the same material system exhibits failure via fracture at substantially higher strengths when it is subjected to bending tests at nearly an order of magnitude higher loading rates. These results highlight an important new pathway to controllably tune the nanomechanical performance of these technologically important nanoceramics for application-specific needs: either achieve self-reversible and ultra-large plasticity, or achieve substantially higher fracture strengths that approach the intrinsic limits of the material system.

In Situ Atomic-Scale Study on the Ultralarge Bending Behaviors of TiO2-B/Anatase Dual-Phase Nanowires

It is challenging but important to understand the mechanical properties of one-dimensional (1D) nanomaterials for their design and integration into nanodevices. Generally, brittle ceramic nanowires (NWs) cannot withstand a large bending strain. Herein, in situ bending deformation of titanium dioxide (TiO₂) NWs with a bronze/anatase dual-phase was carried out inside a transmission electron microscopy (TEM) system. An ultralarge bending strain up to 20.3% was observed on individual NWs. Through an in situ atomic-scale study, the large bending behavior for a dual-phase TiO₂ NW was found to be related to a continuous crystalline-structure evolution including phase transition, small deformation twinning, and dislocation nucleation and movements. Additionally, no amorphization or crack occurred in the dual-phase TiO₂ NW even under an ultralarge bending strain. These results revealed that an individual ceramic NW can undergo a large bending strain with rich defect activities.

Unprecedented Piezoresistance Coefficient in Strained Silicon Carbide

Reports reveal that the piezoresistance coefficients of silicon carbide (SiC) nanowires (NWs) are 2 to 4 times smaller than those of their corresponding bulk counterparts. It is a challenge to eliminate contamination in adhering NWs onto substrates. In this study, a new setup was developed, in which NWs were manipulated and fixed by a goat hair and conductive silver epoxy in air, respectively, in the absence of any depositions. The goat hair was not consumed during manipulation of the NWs. The process took advantage of the stiffness and tapered tip of the goat hair, which is unlike the loss issue of beam sources in depositions. With the new fixing method, in situ transmission electron microscopy (TEM) electromechanical coupling measurements were performed on pristine SiC NWs. The piezoresistance coefficient and carrier mobility of SiC NW are -94.78 × 10^-11 Pa^-1 and 30.05 cm² V^-1 s^-1, respectively, which are 82 and 527 times respectively greater than those of SiC NWs reported previously. We, for the first time, report that the piezoresistance coefficient of SiC NW is 17 times those of its bulk counterparts. These findings provide new insights to develop high performance SiC devices and to help avoid catastrophic failure when working in harsh environments.

Ultrahigh Recovery of Fracture Strength on Mismatched Fractured Amorphous Surfaces of Silicon Carbide

Nanowires (NWs) have been envisioned as building blocks of nanotechnology and nanodevices. In this study, NWs were manipulated using a weasel hair and fixed by conductive silver epoxy, eliminating the contaminations and damages induced by conventional beam depositions. The fracture strength of the amorphous silicon carbide was found to be 8.8 GPa, which was measured by in situ transmission electron microscopy nanomechanical testing, approaching the theoretical fracture limit. Here, we report that self-healing of mismatched fractured amorphous surfaces of brittle NWs was discovered. The fracture strength was found to be 5.6 GPa on the mismatched fractured surfaces, recovering 63.6% of that of pristine NWs. This is an ultrahigh recovery, due to the limits of reconstruction of dangling bonds on the fractured amorphous surfaces and the mismatched areas. Simulation by molecular dynamics showed fracture strength recovery of 65.9% on the mismatched fractured amorphous surfaces, which is in good agreement with the experimental results. Healing on the mismatched fractured amorphous surfaces is by reorganization of Si-C bonds forming Si-C and Si-Si bonds. The potential energy increases 2.6 eV in the reorganized Si-C bonds and decreases by 3.2 and 1.9 eV, respectively, in the formed Si-C and Si-Si bonds. These findings provide insights for the reliability, design, and fabrication of high performance NW-based devices, to avoid catastrophic failure working in harsh and extreme environments.

Atomic-scale investigation on the ultra-large bending behaviours of layered sodium titanate nanowires

A study on the mechanical properties of one-dimensional layered titanate nanomaterials is crucial since they demonstrate important applications in various fields. Here, we conducted ex situ and in situ atomic-scale investigation on the bending properties of a kind of ceramic-layered titanate (Na2Ti2O4(OH)2) nanowire using transmission electron microscopy. The nanowires showed flexibility along the 100 direction and could obtain a maximum bending strain of nearly 37%. By analysing the defect behaviours, the unique bending properties of this ceramic material were found to correlate with a novel arrangement of dislocations, an active dislocation nucleation and movement along the axial direction resulting from the weak electrostatic interaction between the TiO6 layers and the low b/a ratio. These results provide a pioneering and key understanding on the bending behaviours of layered titanate nanowire families and potentially other one-dimensional nanomaterials with layered crystalline structures.

A novel approach to finding mechanical properties of nanocrystal layers

Flexible, bendable, stretchable devices represent the future of electronics for a wide range of real-world applications. Due to the fact that these technologies deviate significantly from traditional wafer technologies there is a need to understand and engineer material systems that allow large elastic deformations present in such devices, which requires knowledge about the mechanical properties of these material systems. Here we evaluate the mechanical properties of a bilayer polydimethylsiloxane (PDMS)/silicon nanocrystal system. By observing the formation of instabilities due to finite bending deformation and applying theoretical modeling, we estimated the neo-Hookean coefficient (analogous to shear modulus at low stress/strain) of the silicon nanocrystal film to be 345 ± 23 kPa. The method used here represents a novel approach to evaluating these properties and is widely applicable to many different combinations of systems of nanocrystals and elastomers.

Effects of crystal orientation and diameter on the mechanical properties of single-crystal MgAl2O4 spinel nanowires

The influence of crystal orientation (including [100], [110], and [111]) and diameter (ranging from 2 to 10 nm) on the tensile deformation behavior and mechanical properties of single-crystal spinel (MgAl₂O₄) nanowires is investigated using molecular dynamics simulations. Varied deformation characteristics and fracture modes are revealed when the tensile loading is applied in the differently oriented nanowires. Mechanical properties including elastic modulus and ultimate tensile strength of spinel nanowires are distinctly dependent on size in each crystal orientation. This study advances the understanding of spinel nanomechanics which can help the development of high-strength spinel materials and their potential nanodevice applications.

Brittle fracture to recoverable plasticity: polytypism-dependent nanomechanics in todorokite-like nanobelts

Atomic force microscopy (AFM) based nanomechanics experiments involving polytypic todorokite-like manganese dioxide nanobelts reveal varied nanomechanical performance regimes such as brittle fracture, near-brittle fracture, and plastic recovery within the same material system. These nanobelts are synthesized through a layer-to-tunnel material transformation pathway and contain one-dimensional tunnels, which run along their longitudinal axis and are enveloped by m × 3 MnO₆ octahedral units along their walls. Depending on the extent of material transformation towards a tunneled microstructure, the nanobelts exhibit stacking disorders or polytypism where the value for m ranges from 3 to up to ∼20 within different cross-sectional regions of the same nanobelt. The observation of multiple nanomechanical performance regimes within a single material system is attributed to a combination of two factors: (a) the extent of stacking disorder or polytypism within the nanobelts, and (b) the loading (or strain) rate of the AFM nanomechanics experiment. Controllable engineering of recoverable plasticity is a particularly beneficial attribute for advancing the mechanical stability of these ceramic materials, which hold promise for insertion in multiple next-generation technological applications that range from electrical energy storage solutions to catalysis.

Atypical Defect Motions in Brittle Layered Sodium Titanate Nanowires

In situ tensile tests show atypical defect motions in the brittle Na₂Ti₃O₇ (NTO) nanowire (NW) within the elastic deformation range. After brittle fracture, elastic recovery of the NTO NW is followed by reversible motion of the defects in a time-dependent manner. An in situ cyclic loading-unloading test shows that these mobile defects shift back and forth along the NW in accordance with the loading-unloading cycles and eventually restore their initial positions after the load is completely removed. The existence of the defects within the NTO NWs and their motions does not lead to plastic deformation of the NW. The atypical defect motion is speculated to be the result of the glidibility of the TiO₆ layers, where weakly bonded cation layers are in between. Exploration of the above novel observation can establish new understandings of the deformation behavior of superlattice nanostructures.

Mechanically Driven Grain Boundary Formation in Nickel Nanowires

Metallic nanomaterials are widely used in micro/nanodevices. However, the mechanically driven microstructure evolution in these nanomaterials is not clearly understood, particularly when large stress and strain gradients are present. Here, we report the in situ bending experiment of Ni nanowires containing nanoscale twin lamellae using high-resolution transmission electron microscopy. We found that the large, localized bending deformation of Ni nanowires initially resulted in the formation of a low-angle tilt grain boundary (GB), consisting of randomly distributed dislocations in a diffuse GB layer. Further bending intensified the local plastic deformation and thus led to the severe distortion and collapse of local lattice domains in the GB region, thereby transforming a low-angle GB to a high-angle GB. Atomistic simulations, coupled with in situ atomic-scale imaging, unravelled the roles of bending-induced strain gradients and associated geometrically necessary dislocations in GB formation. These results offer a valuable understanding of the mechanically driven microstructure changes in metallic nanomaterials through GB formation. The work also has implications for refining the grains in bulk nanocrystalline materials.

Anisotropic electrical transport of flexible tungsten carbide nanostructures: towards nanoscale interconnects and electron emitters

Due to the coexistence of metal- and ionic-bonds in a hexagonal tungsten carbide (WC) lattice, disparate electron behaviors were found in the basal plane and along the c-axial direction, which may create an interesting anisotropic mechanical and electrical performance. To demonstrate this, low-dimensional nanostructures such as nanowires and nanosheets are suitable for investigation because they usually grow in single crystals with special orientations. Herein, we report the experimental research regarding the anisotropic conductivity of [0001] grown WC nanowires and basal plane-expanded nanosheets, which resulted in a conductivity of 7.86 × 10³ Ω^-1 · m^-1 and 7.68 × 10⁴ Ω^-1 · m^-1 respectively. This conforms to the fact that the highly localized W d state aligns along the c direction, while there is little intraplanar directional bonding in the W planes. With advanced micro-manipulation technology, the conductivity of a nanowire was tested to be approximately constant, even under a considerable bending state. Moreover, the field electron emission of WC was evaluated based on large area emission and single nanowire (nanosheet) emission. A single nanowire exhibits a stable electron emission performance, which can output emission currents >3 uA before fusing. These results provide useful references to assess low-dimensional WC nanostructures as electronic materials in flexible devices, such as nanoscale interconnects and electron emitters.

Size effect on the deformation mechanisms of nanocrystalline platinum thin films

This paper reports a study of time-resolved deformation process at the atomic scale of a nanocrystalline Pt thin film captured in situ under a transmission electron microscope. The main mechanism of plastic deformation was found to evolve from full dislocation activity-enabled plasticity in large grains (with grain size d > 10 nm), to partial dislocation plasticity in smaller grains (with grain size 10 nm < d < 6 nm), and grain boundary-mediated plasticity in the matrix with grain sizes d < 6 nm. The critical grain size for the transition from full dislocation activity to partial dislocation activity was estimated based on consideration of stacking fault energy. For grain boundary-mediated plasticity, the possible contributions to strain rate of grain creep, grain sliding and grain rotation to plastic deformation were estimated using established models. The contribution of grain creep is found to be negligible, the contribution of grain rotation is effective but limited in magnitude, and grain sliding is suggested to be the dominant deformation mechanism in nanocrystalline Pt thin films. This study provided the direct evidence of these deformation processes at the atomic scale.

Plastic Deformation through Dislocation Saturation in Ultrasmall Pt Nanocrystals and Its in Situ Atomistic Mechanisms

The atomic-scale deformation dynamic behaviors of Pt nanocrystals with size of ∼18 nm were in situ investigated using our homemade device in a high-resolution transmission electron microscope. It was discovered that the plastic deformation of the nanosized single crystalline Pt commenced with dislocation "appreciation" first, then followed by a dislocation "saturation" phenomenon. The magnitude of strain plays a key role on dislocation behaviors. At the early to medium stage of deformation, the plastic deformation was controlled by the full dislocation activities accompanied by the formation of Lomer dislocation locks from reaction of full dislocations. When the strain increased to a significant level, stacking faults and extended dislocations as well as Lomer-Cottrell locks appeared. The Lomer-Cottrell locks can unlock through transferring into Lomer dislocation locks first, and then Lomer dislocation locks were destructed under high stresses. The very high density dislocations and the frequent dislocation reactions through Lomer dislocations and Lomer-Cottrell locks may lead to work hardening in nanosized Pt.

Ultralarge Bending Strain and Fracture-Resistance Investigation of Tungsten Carbide Nanowires

Hard tungsten carbide (WC) with brittle behavior is frequently applied for mechanical purposes. Here, ultralarge elastic bending deformation is reported in defect-rare WC [0001] nanowires; the tested bending strain reaches a maximum of 20% ± 3.33%, which challenges the traditional understanding of this material. The lattice analysis indicates that the dislocations are confined to the inner part of the WC nanowires. First, the high Peierls-Nabarro barrier hinders the movement of the locally formed dislocations, which causes rapid dislocation aggregation and hinders long-range glide, resulting in a dense distribution of the dislocation network. In this case, the loading is dispersed along multiple points, which is then balanced by the complex internal mechanical field. In the compressive part, the possible dislocations predominantly emerge in the (0001) plane and mainly slip along the axial direction. The disordered shell first forms at the tensile side and prevents the generation of nanocracks at the surface. The novel lattice kinetics make WC nanowires capable of substantial bending strain resistance. Analytical results of the force-displacement (F-d) curves based on the double-clamped beam model exhibit an obvious nonlinear elastic characteristic, which originates fundamentally from the lattice anharmonicity under moderate stress.

Evolution of Phase, Microstructure and ZrC Lattice Parameter in Solid-solution-treated W-ZrC Composite

Zirconium carbide (ZrC) reinforced tungsten (W) composite was hot-pressed at 2200 °C for 1 h in vacuum, which was subsequently heat treated in the temperature range of 2200 to 2500 °C for 1.5 or 2 h. The relative ratios of ZrC phase were 21.0, 23.3 and 25.9 mol.% for the mixture of starting powders, composites sintered for 1 h and solid-solution treated at 2500 °C for 1.5 h, respectively. The solid solubility of W in ZrC increased with the increment in heat-treating temperature and time to a maximum value of 18.9 mol.% at 2500 °C for 1.5 h. The lattice parameter of cubic ZrC phase diminished from 0.4682 nm in the starting powder to 0.4642 nm in the solid-solution composite treated at 2500 °C for 1.5 h. This work demonstrated that the relationship between the solid solubility of W in ZrC and the lattice parameter of ZrC is linear, with a slope of −1.93 × 10⁻⁴ nm/at.%. Overall, more W atoms diffused into ZrC lattice after heat treatment, meanwhile, the previous precipitated nano-sized W dissolved in the supersaturated (Zr,W)C solid-solution, as detected by SEM and TEM.

Sub-1 nm Nanowire Based Superlattice Showing High Strength and Low Modulus

Polymers possess special dimension-dependent processing flexibility which is always absent in inorganic materials. Traditional inorganic nanowires own similar dimensions to polymers, but usually lack near-molecular diameters and the related properties. Here we report that inorganic nanowires with sub1 nm diameter and microscale length can be electrospinningly processed into superstructures including smooth fibers and large-area mat by tuning the viscosity and surface tension of the colloidal nanowires solution. These superstructures have shown both flexible texture and excellent mechanical properties (712.5 MPa for tensile strength, 10.3 GPa for elastic modulus) while retaining properties arising from inorganic components.

Soft Zr-doped TiO2 Nanofibrous Membranes with Enhanced Photocatalytic Activity for Water Purification

Self-standing photocatalytic membranes constructed from TiO₂ nanofibers hold great promise in environmental remediation; however, challenges still remained for the poor mechanical properties of polycrystalline TiO₂ nanofibers. Herein, soft Zr-doped TiO₂ (TZ) nanofibrous membranes with robust mechanical properties and enhanced photocatalytic activity were fabricated via electrospinning technique. The Zr⁴⁺ incorporation could effectively inhibit the grain growth and reduce the surface defects and breaking point of TiO₂ nanofiber. The as-prepared TZ membranes were composed of well-interconnected nanofibers with a high aspect ratios, small grain size and pore size, which exhibited good tensile strength (1.32 MPa) and showed no obvious damage after 200 cycles of bending to a radius of 2 mm. A plausible bending deformation mechanism of the soft TZ membranes was proposed from microscopic single nanofiber to macroscopical membranes. Moreover, the resultant TZ membranes displayed better photocatalytic performance for methylene blue degradation compared to a commercial catalyst (P25), including high degradation degree of 95.4% within 30 min, good reusability in 5 cycles, and easiness of recycling. The successful preparation of such fascinating materials may open up new avenues for the design and development of soft TiO₂-based membranes for various application.

The Mechanical Properties of Nanowires

Applications of nanowires into future generation nanodevices require a complete understanding of the mechanical properties of the nanowires. A great research effort has been made in the past two decades to understand the deformation physics and mechanical behaviors of nanowires, and to interpret the discrepancies between experimental measurements and theoretical predictions. This review focused on the characterization and understanding of the mechanical properties of nanowires, including elasticity, plasticity, anelasticity and strength. As the results from the previous literature in this area appear inconsistent, a critical evaluation of the characterization techniques and methodologies were presented. In particular, the size effects of nanowires on the mechanical properties and their deformation mechanisms were discussed.

MEMS Device for Quantitative In Situ Mechanical Testing in Electron Microscope

In this work, we designed a micro-electromechanical systems (MEMS) device that allows simultaneous direct measurement of mechanical properties during deformation under external stress and characterization of the evolution of nanomaterial microstructure within a transmission electron microscope. This MEMS device makes it easy to establish the correlation between microstructure and mechanical properties of nanomaterials. The device uses piezoresistive sensors to measure the force and displacement of nanomaterials qualitatively, e.g., in wire and thin plate forms. The device has a theoretical displacement resolution of 0.19 nm and a force resolution of 2.1 μN. The device has a theoretical displacement range limit of 5.47 μm and a load range limit of 55.0 mN.

Strain Gradient Modulated Exciton Evolution and Emission in ZnO Fibers

One-dimensional semiconductor can undergo large deformation including stretching and bending. This homogeneous strain and strain gradient are an easy and effective way to tune the light emission properties and the performance of piezo-phototronic devices. Here, we report that with large strain gradients from 2.1–3.5% μm⁻¹, free-exciton emission was intensified, and the free-exciton interaction (FXI) emission became a prominent FXI-band at the tensile side of the ZnO fiber. These led to an asymmetric variation in energy and intensity along the cross-section as well as a redshift of the total near-band-edge (NBE) emission. This evolution of the exciton emission was directly demonstrated using spatially resolved CL spectrometry combined with an in situ tensile-bending approach at liquid nitrogen temperature for individual fibers and nanowires. A distinctive mechanism of the evolution of exciton emission is proposed: the enhancement of the free-exciton-related emission is attributed to the aggregated free excitons and their interaction in the narrow bandgap in the presence of high bandgap gradients and a transverse piezoelectric field. These results might facilitate new approaches for energy conversion and sensing applications via strained nanowires and fibers.

Damage and recovery induced by a high energy e-beam in a silicon nanofilm

Herein, electron beam-induced damage and recovery of a silicon thin film was investigatedin situ viatransmission electron microscopy (TEM).

Fabrication of a spontaneously bent ZnO nanowire with asymmetrical dots by UV irradiation

A spontaneously bent ZnO nanowire which has asymmetrical dots on its edge was synthesised by UV irradiation.

Parallel Nanoshaping of Brittle Semiconductor Nanowires for Strained Electronics

Semiconductor nanowires (SCNWs) provide a unique tunability of electro-optical property than their bulk counterparts (e.g., polycrystalline thin films) due to size effects. Nanoscale straining of SCNWs is desirable to enable new ways to tune the properties of SCNWs, such as electronic transport, band structure, and quantum properties. However, there are two bottlenecks to prevent the real applications of straining engineering of SCNWs: strainability and scalability. Unlike metallic nanowires which are highly flexible and mechanically robust for parallel shaping, SCNWs are brittle in nature and could easily break at strains slightly higher than their elastic limits. In addition, the ability to generate nanoshaping in large scale is limited with the current technologies, such as the straining of nanowires with sophisticated manipulators, nanocombing NWs with U-shaped trenches, or buckling NWs with prestretched elastic substrates, which are incompatible with semiconductor technology. Here we present a top-down fabrication methodology to achieve large scale nanoshaping of SCNWs in parallel with tunable elastic strains. This method utilizes nanosecond pulsed laser to generate shock pressure and conformably deform the SCNWs onto 3D-nanostructured silicon substrates in a scalable and ultrafast manner. A polymer dielectric nanolayer is integrated in the process for cushioning the high strain-rate deformation, suppressing the generation of dislocations or cracks, and providing self-preserving mechanism for elastic strain storage in SCNWs. The elastic strain limits have been studied as functions of laser intensity, dimensions of nanowires, and the geometry of nanomolds. As a result of 3D straining, the inhomogeneous elastic strains in GeNWs result in notable Raman peak shifts and broadening, which bring more tunability of the electrical-optical property in SCNWs than traditional strain engineering. We have achieved the first 3D nanostraining enhanced germanium field-effect transistors from GeNWs. Due to laser shock induced straining effect, a more than 2-fold hole mobility enhancement and a 120% transconductance enhancement are obtained from the fabricated back-gated field effect transistors. The presented nanoshaping of SCNWs provide new ways to manipulate nanomaterials with tunable electrical-optical properties and open up many opportunities for nanoelectronics, the nanoelectrical-mechanical system, and quantum devices.

Study of the Mechanical Behavior of Radially Grown Fivefold Twinned Nanowires on the Atomic Scale

In situ bending tests and dynamic modeling simulations are for the first time revealing the mechanical behavior of copper nanowires (NW) with radially grown fivefold twin structures on the atomic scale. Combining the simulations with the experimental results it is shown that both the twin boundaries (TBs) and the twin center act as dislocation sources. TB migration and L-locks are readily observed in these types of radially grown fivefold-twin structures.

Crystal Orientation Controlled Photovoltaic Properties of Multilayer GaAs Nanowire Arrays

In recent years, despite significant progress in the synthesis, characterization, and integration of various nanowire (NW) material systems, crystal orientation controlled NW growth as well as real-time assessment of their growth-structure-property relationships still presents one of the major challenges in deploying NWs for practical large-scale applications. In this study, we propose, design, and develop a multilayer NW printing scheme for the determination of crystal orientation controlled photovoltaic properties of parallel GaAs NW arrays. By tuning the catalyst thickness and nucleation and growth temperatures in the two-step chemical vapor deposition, crystalline GaAs NWs with uniform, pure ⟨110⟩ and ⟨111⟩ orientations and other mixture ratios can be successfully prepared. Employing lift-off resists, three-layer NW parallel arrays can be easily attained for X-ray diffraction in order to evaluate their growth orientation along with the fabrication of NW parallel array based Schottky photovoltaic devices for the subsequent performance assessment. Notably, the open-circuit voltage of purely ⟨111⟩-oriented NW arrayed cells is far higher than that of ⟨110⟩-oriented NW arrayed counterparts, which can be interpreted by the different surface Fermi level pinning that exists on various NW crystal surface planes due to the different As dangling bond densities. All this indicates the profound effect of NW crystal orientation on physical and chemical properties of GaAs NWs, suggesting the careful NW design considerations for achieving optimal photovoltaic performances. The approach presented here could also serve as a versatile and powerful platform for in situ characterization of other NW materials.

Strain-induced growth of oriented graphene layers revealed by in situ transmission electron microscopy observation

We report on the observation of the strain-induced oriented alignment of graphene layers during the in situ 80 keV e-beam irradiation of an amorphous carbon structure using an aberration corrected (Cs-corrected) electron transmission microscope. E-beam irradiation promoted the amorphous-to-ordered structure transformation and contributed to the formation of small sized graphene flakes by local structure reconstruction. In the mean time, graphene flakes were driven to rotate and re-orient along the strain direction under the uni-axial stress conditions, which finally connected with each other and produced a high oriented structure. Our observations suggest that strain engineering could be an effective method in tuning the microstructure and properties especially in layer-structured materials.

Biomimetic Hierarchical Assembly of Helical Supraparticles from Chiral Nanoparticles

Chiroptical materials found in butterflies, beetles, stomatopod crustaceans, and other creatures are attributed to biocomposites with helical motifs and multiscale hierarchical organization. These structurally sophisticated materials self-assemble from primitive nanoscale building blocks, a process that is simpler and more energy efficient than many top-down methods currently used to produce similarly sized three-dimensional materials. Here, we report that molecular-scale chirality of a CdTe nanoparticle surface can be translated to nanoscale helical assemblies, leading to chiroptical activity in the visible electromagnetic range. Chiral CdTe nanoparticles coated with cysteine self-organize around Te cores to produce helical supraparticles. D-/L-Form of the amino acid determines the dominant left/right helicity of the supraparticles. Coarse-grained molecular dynamics simulations with a helical pair-potential confirm the assembly mechanism and the origin of its enantioselectivity, providing a framework for engineering three-dimensional chiral materials by self-assembly. The helical supraparticles further self-organize into lamellar crystals with liquid crystalline order, demonstrating the possibility of hierarchical organization and with multiple structural motifs and length scales determined by molecular-scale asymmetry of nanoparticle interactions.

Strain Loading Mode Dependent Bandgap Deformation Potential in ZnO Micro/Nanowires

The electronic-mechanical coupling in semiconductor nanostructures under different strain loading modes can modulate their photoelectric properties in different manners. Here, we report the systematic investigation on the strain mode dependent bandgap deformation potential of ZnO micro/nanowires under both uniaxial tensile and bending strains at room temperature. Uniaxial stretching-photoluminescence results show that the deformation potential of the smaller ZnO nanowire (with diameter d = 260 nm) is -30.6 meV/%, and is close to the bulk value, whereas it deviates the bulk value and becomes to be -10.6 meV/% when the wire diameter is increased to d = 2 μm. This unconventional size dependence stems from surface effect induced inhomogeneous strain in the surface layer and the core of the ZnO micro/nanowires under uniaxial tension. For bending load mode, the in situ high-resolution transmission electron microscope analysis reveals that the local strain distributes linearly in the bending cross section. Further cathodoluminescence measurements on a bending ZnO microwire (d = 1.8 μm) demonstrate that the deformation potential is -27 meV/%, whose absolute value is much larger than that of the ZnO microwire under uniaxial tension. Further analysis reveals that the distinct deformation potentials originate from the different deforming modes in ZnO micro/nanowires under bending or uniaxial tensile strains. Our results should facilitate the design of flexible optoelectronic nanodevices.

Determination of Young's Modulus of Ultrathin Nanomaterials

Determination of the elastic modulus of nanostructures with sizes at several nm range is a challenge. In this study, we designed an experiment to measure the elastic modulus of amorphous Al2O3 films with thicknesses varying between 2 and 25 nm. The amorphous Al2O3 was in the form of a shell, wrapped around GaAs nanowires, thereby forming an effective core/shell structure. The GaAs core comprised a single crystal structure with a diameter of 100 nm. Combined in situ compression transmission electron microscopy and finite element analysis were used to evaluate the elastic modulus of the overall core/shell nanowires. A core/shell model was applied to deconvolute the elastic modulus of the Al2O3 shell from the core. The results indicate that the elastic modulus of amorphous Al2O3 increases significantly when the thickness of the layer is smaller than 5 nm. This novel nanoscale material can be attributed to the reconstruction of the bonding at the surface of the material, coupled with the increase of the surface-to-volume ratio with nanoscale dimensions. Moreover, the experimental technique and analysis methods presented in this study may be extended to measure the elastic modulus of other materials with dimensions of just several nanometers.

Dynamic In-Situ Experimentation on Nanomaterials at the Atomic Scale

With the development of in situ techniques inside transmission electron microscopes (TEMs), external fields and probes can be applied to the specimen. This development transforms the TEM specimen chamber into a nanolab, in which reactions, structures, and properties can be activated or altered at the nanoscale, and all processes can be simultaneously recorded in real time with atomic resolution. Consequently, the capabilities of TEM are extended beyond static structural characterization to the dynamic observation of the changes in specimen structures or properties in response to environmental stimuli. This extension introduces new possibilities for understanding the relationships between structures, unique properties, and functions of nanomaterials at the atomic scale. Based on the idea of setting up a nanolab inside a TEM, tactics for design of in situ experiments inside the machine, as well as corresponding examples in nanomaterial research, including in situ growth, nanofabrication with atomic precision, in situ property characterization, and nanodevice construction are presented.

Fracture strain of SiC nanowires and direct evidence of electron-beam induced amorphisation in the strained nanowires

SiC nanowires with diameters ranging from 29 to 270 nm exhibit an average strain of 5.5% with a maximum of up to 7.0%. The brittle fracture of the nano-wires being measured was confirmed by transmission electron microscopy (TEM) analysis. This study demonstrates that amorphisation occurs in the stained SiC nanowires during normal TEM examination, which could be induced by electron irradiation.

Variation of exciton emissions of ZnO whiskers reversibly tuned by axial tensile strain

Applying strain on semiconductors is a powerful method to modulate its electronic structures and optical properties. In this study, the behavior of liquid-nitrogen exciton emissions and the longitudinal optical phonon-exciton interactions of tensile strained [0001]-orientated ZnO whiskers were investigated using in situ cathodoluminescence spectroscopy. It has been found that, under the axial tensile strain, various exciton emissions shift to the long wavelength and their shifts have a linear relationship with the applied strain. This linear relationship and reversible shift suggest that the strain plays a dominating role in manipulating light emissions of axially strained ZnO whiskers.

Strengthening brittle semiconductor nanowires through stacking faults: insights from in situ mechanical testing

Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ~5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ~9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed.