Imaging of the Schottky barriers and charge depletion in carbon nanotube transistors

Electronic and Optoelectronic Monolayer WSe2 Devices via Transfer-Free Fabrication Method

Monolayer transition metal dichalcogenides (TMDs) have drawn significant attention for their potential applications in electronics and optoelectronics. To achieve consistent electronic properties and high device yield, uniform large monolayer crystals are crucial. In this report, we describe the growth of high-quality and uniform monolayer WSe₂ film using chemical vapor deposition on polycrystalline Au substrates. This method allows for the fabrication of continuous large-area WSe₂ film with large-size domains. Additionally, a novel transfer-free method is used to fabricate field-effect transistors (FETs) based on the as-grown WSe₂. The exceptional metal/semiconductor interfaces achieved through this fabrication method result in monolayer WSe₂ FETs with extraordinary electrical performance comparable to those with thermal deposition electrodes, with a high mobility of up to ≈62.95 cm² V^-1 s^-1 at room temperature. In addition, the as-fabricated transfer-free devices can maintain their original performance after weeks without obvious device decay. The transfer-free WSe₂-based photodetectors exhibit prominent photoresponse with a high photoresponsivity of ~1.7 × 10⁴ A W^-1 at V_ds = 1 V and V_g = -60 V and a maximum detectivity value of ~1.2 × 10¹³ Jones. Our study presents a robust pathway for the growth of high-quality monolayer TMDs thin films and large-scale device fabrication.

Competing Mechanisms for Photocurrent Induced at the Monolayer-Multilayer Graphene Junction

Graphene is characterized by demonstrated unique properties for potential novel applications in photodetection operated in the frequency range from ultraviolet to terahertz. To date, detailed work on identifying the origin of photoresponse in graphene is still ongoing. Here, scanning photocurrent microscopy to explore the nature of photocurrent generated at the monolayer-multilayer graphene junction is employed. It is found that the contributing photocurrent mechanism relies on the mismatch of the Dirac points between the monolayer and multilayer graphene. For overlapping Dirac points, only photothermoelectric effect (PTE) is observed at the junction. When they do not coincide, a different photocurrent due to photovoltaic effect (PVE) appears and becomes more pronounced with larger separation of the Dirac points. While only PTE is reported for a monolayer-bilayer graphene junction in the literature, this work confirms the coexistence of PTE and PVE, thereby extending the understanding of photocurrent in graphene-based heterojunctions.

Photocurrent spectroscopy of dye-sensitized carbon nanotubes

Monochiral (7,5) single walled carbon nanotubes (SWCNTs) are integrated into a field effect transistor device in which the built-in electric field at the nanotube/metal contact allows for exciton separation under illumination. Variable wavelength spectroscopy and 2D surface mapping of devices consisting of 10-20 nanotubes are performed in the visible region and a strong correlation between the nanotube's second optical transition (S₂₂) and the photocurrent is found. After integration, the SWCNTs are non-covalently modified with three different fluorescent dye molecules with off-resonant absorption maxima at 532 nm, 565 nm, and 610 nm. The dyes extend the absorption properties of the nanotube and contribute to the photocurrent. This approach holds promise for the development of photo-detectors and for applications in photovoltaics and biosensing.

Dynamic Electronic Junctions in Organic-Inorganic Hybrid Perovskites

Organic-inorganic hybrid perovskites have shown great potential as building blocks for low-cost optoelectronics for their exceptional optical and electrical properties. Despite the remarkable progress in device demonstration, fundamental understanding of the physical processes in halide perovskites remains limited, especially the unusual electronic behaviors such as the current-voltage hysteresis and the switchable photovoltaic effect. These phenomena are of particular interests for being closely related to device functionalities and performance. In this work, a microscopic picture of electric fields in halide perovskite thin films was obtained using scanning laser microscopy. Unlike conventional semiconductors, distribution of the built-in electric fields in the halide perovskite evolves dynamically under the stimulation of external biases. The observations can be well explained using a model based on field-assisted ion migration, indicating that the mechanism responsible for the evolving charge transport observed in this material is not purely electronic. The anomalous dynamic responses to the applied bias are found to be effectively suppressed by operating the devices at reduced temperature or processing the materials at elevated temperature, which provide potential strategies for designing and creating halide perovskites with more stable charge transport properties in the development of viable perovskite-based optoelectronics.

Asymmetric Light Excitation for Photodetectors Based on Nanoscale Semiconductors

A photodetector is a key device to extend the cognition fields of mankind and to enrich information transfer. With the advent of emerging nanomaterials and nanophotonic techniques, new explorations and designs for photodetection have been constantly put forward. Here, we report the asymmetric-light-excitation photoelectric detectors with symmetric electrical contacts working at zero external bias. Unlike conventional photodetectors with symmetric contacts which are usually used as photoconductors or phototransistors showing no photocurrent at zero bias, in this device, the asymmetric-light-excitation structure is designed to ensure that only one Schottky junction between two metallic electrodes and semiconductors is illuminated. In this condition, a device can contribute to a photocurrent without bias. Furthermore, incident light with global illumination will be redistributed by the top Au patterns on devices. The achievement of detectors benefits from the designed redistribution of optical field on specific Schottky barriers within optically active regions and effective carrier collection, producing unidirectional photocurrent for large-scale detection applications. The response mechanisms, including excitations under different polarizations, wavebands, and tilted incidences, were systematically elaborated. Device performances including photocurrent, dynamic response, and detectivity were also carefully measured, demonstrating the possibility for applications in high-speed imaging sensors or integrated optoelectronic systems. The concept of asymmetric-light-excitation photodetectors shows wider availability to other nanomaterials for modern optoelectronics.

Dynamics of graded-composition and graded-doping semiconductor nanowires under local carrier modulation

Scanning photocurrent microscopy is a powerful tool for investigating charge transfer and internal fields, which strongly influence carrier statics and dynamics in semiconductor nanowires. We performed comprehensive numerical modeling of the carrier dynamics of graded-composition and graded-doping AlGaAs nanowires to achieve a greater understanding of these nanowires. The simulation results indicated that the built-in electric field changes the shape of the scanning photocurrent microscopy profiles, which helped us to judge the dopant level, Al composition range and doping type of the material. The simulation results also assess the potential of the scanning photocurrent techniques in graded-doping and graded-composition nanowire properties.

2D-Crystal-Based Functional Inks

The possibility to produce and process graphene, related 2D crystals, and heterostructures in the liquid phase makes them promising materials for an ever-growing class of applications as composite materials, sensors, in flexible optoelectronics, and energy storage and conversion. In particular, the ability to formulate functional inks with on-demand rheological and morphological properties, i.e., lateral size and thickness of the dispersed 2D crystals, is a step forward toward the development of industrial-scale, reliable, inexpensive printing/coating processes, a boost for the full exploitation of such nanomaterials. Here, the exfoliation strategies of graphite and other layered crystals are reviewed, along with the advances in the sorting of lateral size and thickness of the exfoliated sheets together with the formulation of functional inks and the current development of printing/coating processes of interest for the realization of 2D-crystal-based devices.

Microcavity-Integrated Carbon Nanotube Photodetectors

Carbon nanotubes (CNTs) are considered to be highly promising nanomaterials for multiwavelength, room-temperature infrared detection applications. Here, we demonstrate a single-tube diode photodetector monolithically integrated with a Fabry-Pérot microcavity. A ∼6-fold enhanced optical absorption can be achieved, because of the confined effect of the designed optical mode. Furthermore, taking advantage of Van-Hove-singularity band structures in CNTs, we open the possibility of developing chirality-specific (n,m) CNT-film-based signal detectors. Utilizing a concept of the "resonance and off-resonance" cavity, we achieved cavity-integrated chirality-sorted CNT-film detectors working at zero bias and resonance-allowed mode, for specific target signal detection. The detectors exhibited a higher suppression ratio until a power density of 0.07 W cm(-2) and photocurrent of 5 pA, and the spectral full width at half-maximum is ∼33 nm at a signal wavelength of 1200 nm. Further, with multiple array detectors aiming at different target signals integrated on a chip, a multiwavelength signal detector system can be expected to have applications in the fields of monitoring, biosensing, color imaging, signal capture, and on-chip or space information transfers. The approach can also bring other nanomaterials into on-chip or information optoelectronics, regardless of the available doping polarity.

Broadband Photovoltaic Detectors Based on an Atomically Thin Heterostructure

van der Waals junctions of two-dimensional materials with an atomically sharp interface open up unprecedented opportunities to design and study functional heterostructures. Semiconducting transition metal dichalcogenides have shown tremendous potential for future applications due to their unique electronic properties and strong light-matter interaction. However, many important optoelectronic applications, such as broadband photodetection, are severely hindered by their limited spectral range and reduced light absorption. Here, we present a p-g-n heterostructure formed by sandwiching graphene with a gapless band structure and wide absorption spectrum in an atomically thin p-n junction to overcome these major limitations. We have successfully demonstrated a MoS2-graphene-WSe2 heterostructure for broadband photodetection in the visible to short-wavelength infrared range at room temperature that exhibits competitive device performance, including a specific detectivity of up to 10(11) Jones in the near-infrared region. Our results pave the way toward the implementation of atomically thin heterostructures for broadband and sensitive optoelectronic applications.

Ultrasensitive Phototransistors Based on Few-Layered HfS2

An ultrathin HfS2 -based ultrasensitive phototransistor is systematically studied. Au-contacted HfS2 phototransistors with ideal thickness ranging from 7 to 12 nm exhibit a high on/off ratio of ca. 10(7) , ultrahigh photoresponsivity over 890 A W(-1) , and photogain over 2300. Moreover, the response time is strongly dependent on the back-gate voltage and shows a reverse trend for Au and Cr metals.

A study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy

Schottky contacts, formed at metal/semiconductor interfaces, always have a large impact on the performance of field-effect transistors (FETs). Here, we report the experimental studies of Schottky contacts in two-dimensional (2D) transition metal dichalcogenide (TMDC) FET devices. We use scanning photocurrent microscopy (SPCM) to directly probe the spatial distribution of the in-plane lateral Schottky depletion regions at the metal/2D-TMDC interfaces. The laser incident position dependent and the gate voltage tunable polarity and magnitude of the short-circuit photocurrent reveal the existence of the in-plane Schottky depletion region laterally extending away from the metal contact edges along the channel. This lateral depletion region length is estimated to be around several microns and can be effectively tuned by the gate and drain-source biases. Our results solidify the importance of lateral Schottky depletion regions in the photoresponse of 2D TMDC optoelectronic devices.

Photocurrent generation of a single-gate graphene p-n junction fabricated by interfacial modification

A back-gate graphene p-n junction was achieved by selective interfacial modification of a chemical vapor deposition (CVD)-grown graphene field effect transistor (FET). Silane self-assembled monolayer (SAM) patterns were used to fabricate uniform p- and n-doped regions and a sharp p-n junction in the graphene FET channel. A gate-dependent photocurrent response was observed at the graphene p-n junction, and exhibited a maximum signal between two Dirac point voltages of SAM-doped graphene regions. A spatial photocurrent map shows that the photocurrent generated at the junction region was much larger than that from graphene/electrode junctions under the same incident laser power. This single-peak characteristic photocurrent in CVD graphene is dominated by the photothermoelectric contribution, and is highly sensitive to the power of incident laser. The SAM interfacial modification method provides a feasible route for the fabrication of efficient graphene-based photodetectors.

One-Dimensional Poole-Frenkel Conduction in the Single Defect Limit

A single point defect surrounded on either side by quasi-ballistic, semimetallic carbon nanotube is a nearly ideal system for investigating disorder in one-dimensional (1D) conductors and comparing experiment to theory. Here, individual single-walled nanotubes (SWNTs) are investigated before and after the incorporation of single point defects. Transport and local Kelvin Probe force microscopy independently demonstrate high-resistance depletion regions over 1.0 μm wide surrounding one point defect in semimetallic SWNTs. Transport measurements show that conductance through such wide depletion regions occurs via a modified, 1D version of Poole-Frenkel field-assisted emission. Given the breadth of theory dedicated to the possible effects of disorder in 1D systems, it is surprising that a Poole-Frenkel mechanism appears to describe defect scattering and resistance in this semimetallic system.

Spatially resolved photoexcited charge-carrier dynamics in phase-engineered monolayer MoS2

A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition-metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. Here, we investigate the transport properties of chemical vapor deposition (CVD) grown monolayer molybdenum disulfide (MoS2) under photoexcitation using correlated scanning photocurrent microscopy and photoluminescence imaging. We examined the effect of local phase transformation underneath the metal electrodes on the generation of photocurrent across the channel length with diffraction-limited spatial resolution. While maximum photocurrent generation occurs at the Schottky contacts of semiconducting (2H-phase) MoS2, after the metallic phase transformation (1T-phase), the photocurrent peak is observed toward the center of the device channel, suggesting a strong reduction of native Schottky barriers. Analysis using the bias and position dependence of the photocurrent indicates that the Schottky barrier heights are a few millielectron volts for 1T- and ∼ 200 meV for 2H-contacted devices. We also demonstrate that a reduction of native Schottky barriers in a 1T device enhances the photoresponsivity by more than 1 order of magnitude, a crucial parameter in achieving high-performance optoelectronic devices. The obtained results pave a way for the fundamental understanding of intrinsic optoelectronic properties of atomically thin TMDs where ohmic contacts are necessary for achieving high-efficiency devices with low power consumption.

Photothermoelectric and photovoltaic effects both present in MoS2

As a finite-energy-bandgap alternative to graphene, semiconducting molybdenum disulfide (MoS₂) has recently attracted extensive interest for energy and sensor applications. In particular for broad-spectral photodetectors, multilayer MoS₂ is more appealing than its monolayer counterpart. However, little is understood regarding the physics underlying the photoresponse of multilayer MoS₂. Here, we employ scanning photocurrent microscopy to identify the nature of photocurrent generated in multilayer MoS₂ transistors. The generation and transport of photocurrent in multilayer MoS₂ are found to differ from those in other low-dimensional materials that only contribute with either photovoltaic effect (PVE) or photothermoelectric effect (PTE). In multilayer MoS₂, the PVE at the MoS₂-metal interface dominates in the accumulation regime whereas the hot-carrier-assisted PTE prevails in the depletion regime. Besides, the anomalously large Seebeck coefficient observed in multilayer MoS₂, which has also been reported by others, is caused by hot photo-excited carriers that are not in thermal equilibrium with the MoS₂ lattice.

Electrical contacts to individual SWCNTs: A review

Owing to their superior electrical characteristics, nanometer dimensions and definable lengths, single-walled carbon nanotubes (SWCNTs) are considered as one of the most promising materials for various types of nanodevices. Additionally, they can be used as either passive or active elements. To be integrated into circuitry or devices, they are typically connected with metal leads to provide electrical contacts. The properties and quality of these electrical contacts are important for the function and performance of SWCNT-based devices. Since carbon nanotubes are quasi-one-dimensional structures, contacts to them are different from those for bulk semiconductors. Additionally, some techniques used in Si-based technology are not compatible with SWCNT-based device fabrication, such as the contact area cleaning technique. In this review, an overview of the investigations of metal-SWCNT contacts is presented, including the principle of charge carrier injection through the metal-SWCNT contacts and experimental achievements. The methods for characterizing the electrical contacts are discussed as well. The parameters which influence the contact properties are summarized, mainly focusing on the contact geometry, metal type and the cleanliness of the SWCNT surface affected by the fabrication processes. Moreover, the challenges for widespread application of CNFETs are additionally discussed.

Role of metal contacts in high-performance phototransistors based on WSe2 monolayers

Phototransistors based on monolayer transition metal dichalcogenides (TMD) have high photosensitivity due to their direct band gap transition. However, there is a lack of understanding of the effect of metal contacts on the performance of atomically thin TMD phototransistors. Here, we fabricate phototransistors based on large-area chemical vapor deposition (CVD) tungsten diselenide (WSe2) monolayers contacted with the metals of different work function values. We found that the low Schottky-contact WSe2 phototransistors exhibit a very high photo gain (10(5)) and specific detectivity (10(14)Jones), values higher than commercial Si- and InGaAs-based photodetectors; however, the response speed is longer than 5 s in ambient air. In contrast, the high Schottky-contact phototransistors display a fast response time shorter than 23 ms, but the photo gain and specific detectivity decrease by several orders of magnitude. Moreover, the fast response speed of the high Schottky-contact devices is maintained for a few months in ambient air. This study demonstrates that the contact plays an important role in TMD phototransistors, and barrier height tuning is critical for optimizing the photoresponse and photoresponsivity.

Polarized photocurrent response in black phosphorus field-effect transistors

We investigate electrical transport and optoelectronic properties of field effect transistors (FETs) made from few-layer black phosphorus (BP) crystals down to a few nanometers. In particular, we explore the anisotropic nature and photocurrent generation mechanisms in BP FETs through spatial-, polarization-, gate-, and bias-dependent photocurrent measurements. Our results reveal that the photocurrent signals at BP-electrode junctions are mainly attributed to the photovoltaic effect in the off-state and photothermoelectric effect in the on-state, and their anisotropic feature primarily results from the directional-dependent absorption of BP crystals.

Antenna-enhanced optoelectronic probing of carbon nanotubes

We report on the first antenna-enhanced optoelectronic microscopy studies on nanoscale devices. By coupling the emission and excitation to a scanning optical antenna, we are able to locally enhance the electroluminescence and photocurrent along a carbon nanotube device. We show that the emission source of the electroluminescence can be pointlike with a spatial extension below 20 nm. Topographic and antenna-enhanced photocurrent measurements reveal that the emission takes place at the location of highest local electric field indicating that the mechanism behind the emission is the radiative decay of excitons created via impact excitation.

Photothermoelectric effect in suspended semiconducting carbon nanotubes

We have performed scanning photocurrent microscopy measurements of field-effect transistors (FETs) made from individual ultraclean suspended carbon nanotubes (CNTs). We investigate the spatial-dependence, polarization-dependence, and gate-dependence of photocurrent and photovoltage in this system. While previous studies of surface-bound CNT FET devices have identified the photovoltaic effect as the primary mechanism of photocurrent generation, our measurements show that photothermoelectric phenomena play a critical role in the optoelectronic properties of suspended CNT FETs. We have quantified the photothermoelectric mechanisms and identified regimes where they overwhelm the photovoltaic mechanism.

Palladium/single-walled carbon nanotube back-to-back Schottky contact-based hydrogen sensors and their sensing mechanism

A Schottky contact-based hydrogen (H2) gas sensor operable at room temperature was constructed by assembling single-walled carbon nanotubes (SWNTs) on a Si/SiO2 substrate bridged by Pd microelectrodes in a chemiresistive/chemical field effect transistor (chemFET) configuration. The Schottky barrier (SB) is formed by exposing the Pd-SWNT interfacial contacts to H2 gas, the analyte it was designed to detect. Because a Schottky barrier height (SBH) acts as an exponential bottleneck to current flow, the electrical response of the sensor can be particularly sensitive to small changes in SBH, yielding an enhanced response to H2 gas. The sensing mechanism was analyzed by I-V and FET properties before and during H2 exposure. I-Vsd characteristics clearly displayed an equivalent back-to-back Schottky diode configuration and demonstrated the formation of a SB during H2 exposure. The I-Vg characteristics revealed a decrease in the carrier mobility without a change in carrier concentration; thus, it corroborates that modulation of a SB via H2 adsorption at the Pd-SWNT interface is the main sensing mechanism.

Broadband, polarization-sensitive photodetector based on optically-thick films of macroscopically long, dense, and aligned carbon nanotubes

Increasing performance demands on photodetectors and solar cells require the development of entirely new materials and technological approaches. We report on the fabrication and optoelectronic characterization of a photodetector based on optically-thick films of dense, aligned, and macroscopically long single-wall carbon nanotubes. The photodetector exhibits broadband response from the visible to the mid-infrared under global illumination, with a response time less than 32 μs. Scanning photocurrent microscopy indicates that the signal originates at the contact edges, with an amplitude and width that can be tailored by choosing different contact metals. A theoretical model demonstrates the photothermoelectric origin of the photoresponse due to gradients in the nanotube Seebeck coefficient near the contacts. The experimental and theoretical results open a new path for the realization of optoelectronic devices based on three-dimensionally organized nanotubes.

Intrinsic photoconductivity of ultracold fermions in optical lattices

We report on the experimental observation of an analog to a persistent alternating photocurrent in an ultracold gas of fermionic atoms in an optical lattice. The dynamics is induced and sustained by an external harmonic confinement. While particles in the excited band exhibit long-lived oscillations with a momentum-dependent frequency, a strikingly different behavior is observed for holes in the lowest band. An initial fast collapse is followed by subsequent periodic revivals. Both observations are fully explained by mapping the system onto a nonlinear pendulum.

Evaluating bandgap distributions of carbon nanotubes via scanning electron microscopy imaging of the Schottky barriers

We show that the Schottky barrier at the metal-single walled carbon nanotube (SWCNT) contact can be clearly observed in scanning electron microscopy (SEM) images as a bright contrast segment with length up to micrometers due to the space charge distribution in the depletion region. The lengths of the charge depletion increase with the diameters of semiconducting SWCNTs (s-SWCNTs) when connected to one metal electrode, which enables direct and efficient evaluation of the bandgap distributions of s-SWCNTs. Moreover, this approach can also be applied for a wide variety of semiconducting nanomaterials, adding a new function to conventional SEM.

Probing optical transitions in individual carbon nanotubes using polarized photocurrent spectroscopy

Carbon nanotubes show vast potential to be used as building blocks for photodetection applications. However, measurements of fundamental optical properties, such as the absorption coefficient and the dielectric constant, have not been accurately performed on a single pristine carbon nanotube. Here we show polarization-dependent photocurrent spectroscopy, performed on a p-n junction in a single suspended semiconducting carbon nanotube. We observe an enhanced absorption in the carbon nanotube optical resonances, and an external quantum efficiency of 12.3% and 8.7% was deduced for the E11 and E22 transitions, respectively. By studying the polarization dependence of the photocurrent, a dielectric constant of 3.6 ± 0.2 was experimentally determined for this semiconducting carbon nanotube.

Optoelectronic properties of single-wall carbon nanotubes

Single-wall carbon nanotubes (SWCNTs), with their uniquely simple crystal structures and chirality-dependent electronic and vibrational states, provide an ideal laboratory for the exploration of novel 1D physics, as well as quantum engineered architectures for applications in optoelectronics. This article provides an overview of recent progress in optical studies of SWCNTs. In particular, recent progress in post-growth separation methods allows different species of SWCNTs to be sorted out in bulk quantities according to their diameters, chiralities, and electronic types, enabling studies of (n,m)-dependent properties using standard macroscopic characterization measurements. Here, a review is presented of recent optical studies of samples enriched in 'armchair' (n = m) species, which are truly metallic nanotubes but show excitonic interband absorption. Furthermore, it is shown that intense ultrashort optical pulses can induce ultrafast bandgap oscillations in SWCNTs, via the generation of coherent phonons, which in turn modulate the transmission of a delayed probe pulse. Combined with pulse-shaping techniques, coherent phonon spectroscopy provides a powerful method for studying exciton-phonon coupling in SWCNTs in a chirality-selective manner. Finally, some of the basic properties of highly aligned SWCNT films are highlighted, which are particularly well-suited for optoelectronic applications including terahertz polarizers with nearly perfect extinction ratios and broadband photodetectors.

Spatially resolved electrostatic potential and photocurrent generation in carbon nanotube array devices

We have used laser-excited photocurrent microscopy to map the internal electrostatic potential profile of semiconducting single-walled carbon nanotube (S-SWCNT) array devices with a spatial resolution of 250 nm. The measurements of S-SWCNTs on optically transparent samples provide new insights into the physical principles of device operation and reveal performance-limiting local heterogeneities in the electrostatic potential profile not observable with other imaging techniques. The experiments deliver photocurrent images from the underside of the S-SWCNT-metal contacts and thus enable the direct measurement of the charge carrier transfer lengths at the palladium-S-SWCNT and aluminum-S-SWCNT interfaces. We use the experimental results to formulate design rules for optimized layouts of S-SWCNT-based photovoltaic devices. Furthermore, we demonstrate the external control of the electrostatic potential profile in S-SWCNT array devices equipped with local metal gates.

Antenna-enhanced photocurrent microscopy on single-walled carbon nanotubes at 30 nm resolution

We present the first photocurrent measurements along single carbon nanotube (CNT) devices with 30 nm resolution. Our technique is based on tip-enhanced near-field optical microscopy, exploiting the plasmonically enhanced absorption controlled by an optical nanoantenna. This allows for imaging of the zero-bias photocurrent caused by charge separation in local built-in electric fields at the contacts and close to charged particles that cannot be resolved using confocal microscopy. Simultaneously recorded Raman scattering images reveal the structural properties and the defect densities of the CNTs. Antenna-enhanced scanning photocurrent microscopy extends the available set of scanning-probe techniques by combining high-resolution photovoltaic and optical probing and could become a valuable tool for the characterization of nanoelectronic devices.

High-resolution photocurrent mapping of carbon nanostructures

The spatial resolution of photocurrent measurements on carbon nanostructures has reached 20 nm, as demonstrated by Hartschuh and co-workers for individual carbon nanotubes in this issue of ACS Nano. In this Perspective, we provide a brief overview of the applications of scanning photocurrent microscopy to various one- and two-dimensional nanostructures and highlight the importance of the optical antenna concept for future studies of the optoelectronic properties of hybrid nanostructures.

Thinning and shaping solid films into functional and integrative nanomembranes

Conventional solid films on certain substrates play a crucial role in various applications, for example in flat panel displays, silicon technology, and protective coatings. Recently, tremendous attention has been directed toward the thinning and shaping of solids into so-called nanomembranes, offering a unique and fantastic platform for research in nanoscience and nanotechnology. In this Review, a conceptual description of nanomembranes is introduced and a series of examples demonstrate their great potential for future applications. The thinning of nanomembranes indeed offers another strategy to fabricate nanomaterials, which can be integrated onto a chip and exhibit valuable properties (e.g. giant persistent photoconductivity and thermoelectric property). Furthermore, the stretching of nanomembranes enables a macroscale route for tuning the physical properties of the membranes at the nanoscale. The process by which nanomembranes release from a substrate presents several approaches to shaping nanomembranes into three-dimensional architectures, such as rolled-up tubes, wrinkles, and the resulting channels, which can provide fascinating applications in electronics, mechanics, fluidics, and photonics. Nanomembranes as a new type of nanomaterial promise to be an attractive direction for nanoresearch.

Channel-length-dependent transport and photovoltaic characteristics of carbon-nanotube-based, barrier-free bipolar diode

Carbon nanotube (CNT) diodes with different channel length between L = 0.6 μm to 3.5 μm are fabricated on the same tube, and the electric and photovoltaic characteristics are investigated. It is found that although the open voltage of the diode increases rapidly for channel length L less than 1.0 μm, it saturates for longer channel devices. On the other hand, the short circuit current of the diode exhibites a clear peak at intermediate channel length of about 1.5 μm, a large leakage current via tunneling for short channel device and significantly decreased current for long channel device due to the increased recombination and channel resistance. The optimal channel length for a CNT diode in photovoltaic application is thus determined to be about 1.5 μm.

Imaging Schottky barriers and ohmic contacts in PbS quantum dot devices

We fabricated planar PbS quantum dot devices with ohmic and Schottky type electrodes and characterized them using scanning photocurrent and photovoltage microscopies. The microscopy techniques used in this investigation allow for interrogation of the lateral depletion width and related photovoltaic properties in the planar Schottky type contacts. Titanium/QD contacts exhibited depletion widths that varied over a wide range as a function of bias voltage, while the gold/QD contacts showed ohmic behavior over the same voltage range.

Using nanowires to extract excitons from a nanocrystal solid

Synthetic methods yielding highly uniform colloidal semiconductor nanocrystals with controlled shapes and sizes are now available for many materials. These methods have enabled geometrical control of optical properties, which are difficult or impossible to achieve in conventional bulk solids. However, incorporating nanocrystals efficiently into photodetectors remains challenging because of the low charge carrier mobilities typical of nanocrystal solids. Here we present an approach based on exciton energy transfer from CdSe/CdS core/shell nanocrystals to embedded CdSe nanowires. By combining the wide electronic tunability of nanocrystals with the excellent one-dimensional charge transport characteristics obtainable in nanowires, we are able to increase photocurrent extraction from a nanocrystal solid by 2-3 orders of magnitude. Furthermore, we correlate local device morphology with optoelectronic functionality by measuring the local photocurrent response in a scanning confocal microscope. We also discuss how nancocrystal/nanowire hybrid devices could be used in particle detector systems.

Electrothermal dynamics of semiconductor nanowires under local carrier modulation

Charge transfer, surface/interface, defect states, and internal fields strongly influence carrier statics and dynamics in semiconductor nanowires. These effects are usually probed using spatially resolved scanning current techniques, where charge carriers are driven to move by diffusion force due to a density gradient, drift force due to internal fields, and thermoelectric force due to a temperature gradient. However, in the analysis of experimental data, analytical formulas are usually used which are based on the assumption that a single component of these forces dominates the carrier dynamics. In this work we show that this simplification is generally not justified even in the simplest configurations, and the scanning microscopy data need to be analyzed with caution. We performed a comprehensive numerical modeling of the electrothermal dynamics of free charge carriers in the scanning photocurrent microscopy configuration. The simulation allows us to reveal and predict important, surprising effects that are previously not recognized, and assess the limitation as well as potential of these scanning current techniques in nanowire characterization.

Strategy for carrier control in carbon nanotube transistors

Carbon nanotubes exhibit remarkable mechanical and electronic properties and are, therefore, being regarded as a new functional material for next generation electronics. Nevertheless, several obstacles still exist for an application in industry. The control of carriers in carbon nanotubes is of critical importance prior to an industrial application in transistors. As carbon nanotubes exhibit p-type behavior under ambient conditions, it is difficult to convert them from a p- to an n-type transistor. Also, doping control is a critical issue for applying traditional CMOS technology. Here, we discuss various approaches for preparing operating carbon nanotube transistors: i) impurity doping that employs conventional and interstitial insertion of group III or V materials, ii) chemical doping that induces charge transfer between chemicals and CNTs, iii) carrier control that utilizes the work function difference between metal and CNTs, iv) electrostatic doping that controls the carrier type by using a gate bias, and v) ambipolarity that does not use chemical doping. Advantages and drawbacks of these approaches will be discussed extensively in the text.

Spatially resolved plasmonically enhanced photocurrent from Au nanoparticles on a Si nanowire

Semiconducting nanowires have been demonstrated as promising light-harvesting units with enhanced absorption compared to bulk films of equivalent volume. However, for small diameter nanowires, the ultrahigh aspect ratio constrains the absorption to be polarization selective by responding primarily to the transverse magnetic (TM) light. While this effect is useful for polarization-sensitive optoelectronic devices, practical light-harvesting applications demand efficient light absorption in both TM and transverse electric (TE) light. In this study, we engineer the polarization sensitivity and the charge carrier generation in a 50 nm Si nanowire by decorating the surface with plasmonic Au nanoparticles. Using scanning photocurrent microscopy (SPCM) with a tunable wavelength laser, we spatially and spectrally resolve the local enhancement in the TE photocurrent resulting from the plasmonic near-field response of individual nanoparticles and the broad-band enhancement due to surface-enhanced absorption. These results provide guidance to the development and the optimization of nanowire-nanoparticle light-harvesting systems.

Thermionic field emission transport in carbon nanotube transistors

With experimental and analytical analysis, we demonstrate a relationship between the metal contact work function and the electrical transport properties saturation current (Isat) and differential conductance (σsd=∂Isd/∂Vsd) in ambient exposed carbon nanotubes (CNT). A single chemical vapor deposition (CVD) grown 6 mm long semiconducting single-walled CNT is electrically contacted with a statistically significant number of Hf, Cr, Ti, Pd, and Au electrodes, respectively. The observed exponentially increasing relationship of Isat and σsd with metal contact work function is explained by a theoretical model derived from thermionic field emission. Statistical analysis and spread of the data suggest that the conduction variability in same CNT devices results from differences in local surface potential of the metal contact. Based on the theoretical model and methodology, an improved CNT-based gas sensing device layout is suggested. A method to experimentally determine gas-induced work function changes in metals is also examined.

Scanning gate spectroscopy and its application to carbon nanotube defects

A variation of scanning gate microscopy (SGM) is demonstrated in which this imaging mode is extended into an electrostatic spectroscopy. Continuous variation of the SGM probe's electrostatic potential is used to directly resolve the energy spectrum of localized electronic scattering in functioning, molecular scale devices. The technique is applied to the energy-dependent carrier scattering that occurs at defect sites in carbon nanotube transistors, and fitting energy-resolved experimental data to a simple transmission model determines the electronic character of each defect site. For example, a phenolic type of covalent defect is revealed to produce a tunnel barrier 0.1 eV high and 0.5 nm wide.

Label-free single-molecule detection of DNA-hybridization kinetics with a carbon nanotube field-effect transistor

Single-molecule measurements of biomolecules can provide information about the molecular interactions and kinetics that are hidden in ensemble measurements. However, there is a requirement for techniques with improved sensitivity and time resolution for use in exploring biomolecular systems with fast dynamics. Here, we report the detection of DNA hybridization at the single-molecule level using a carbon nanotube field-effect transistor. By covalently attaching a single-stranded probe DNA sequence to a point defect in a carbon nanotube, we are able to measure two-level fluctuations in the conductance of the nanotube in the presence of a complementary DNA target. The kinetics of the system are studied as a function of temperature, allowing the measurement of rate constants, melting curves and activation energies for different sequences and target concentrations. The kinetics demonstrate non-Arrhenius behaviour, in agreement with DNA hybridization experiments using fluorescence correlation spectroscopy. This technique is label-free and could be used to probe single-molecule dynamics at microsecond timescales.

Anomalous Schottky barriers and contact band-to-band tunneling in carbon nanotube transistors

Devices incorporating nanoscale materials, particularly carbon nanotubes (CNTs), offer exceptional electrical performance. Absent, however, is an experimentally backed model explaining contact-metal work function, device layout, and environment effects. To fill the void, this report introduces a surface-inversion channel model based on low temperature and electrical measurements of a distinct single-walled semiconducting CNT contacted by Hf, Cr, Ti, and Pd electrodes. Anomalous barrier heights and metal-contact dependent band-to-band tunneling phenomena are utilized to show that, dependent upon contact work function and gate field, transport occurs either directly between the metal and CNT channel or indirectly via injection of carriers from the metal-covered CNT region to the CNT channel. The model is consistent with previously contradictory experimental results, and the methodology is simple enough to apply in other contact-dominant systems.

Graphitic electrical contacts to metallic single-walled carbon nanotubes using Pt electrodes

We investigate electronic devices consisting of individual, metallic, single-walled carbon nanotubes contacted by Pt electrodes in a field effect transistor configuration, focusing on improvements to the metal-nanotube contact resistance as the devices are annealed in inert environments including ultrahigh vacuum. At moderate temperatures (T < 880 K), thermal processing results in high resistance contacts with thermally activated barriers. Higher temperatures (T > 880 K) achieve nearly transparent contacts. In the latter case, analytical surface measurements reveal the catalytic decomposition of hydrocarbons into graphene layers on the Pt surface, suggesting that improved electronic behavior is primarily due to the formation of an all-carbon nanotube-graphite interface rather than to the improvement of the nanotube-Pt one.

Carbon-Based Field-Effect Transistors for Nanoelectronics

In this review, the suitability of the major types of carbon nanostructures as conducting channels of field-effect transistors (FETs) is compared on the basis of the dimensionality and size of their π-conjugated system. For each of these materials, recent progress in its synthesis, electrical and structural characterization, as well as its implementation into various gate configurations is surveyed, with emphasis laid onto nanoscale aspects of the FET design and the attainable device performance. Finally, promising future research directions, such as the integration of different carbon nanostructures into novel device architectures, are outlined.