Photovoltaic measurements in single-nanowire silicon solar cells

Wide-field imaging of active site distribution on semiconducting transition metal dichalcogenide nanosheets in electrocatalytic and photoelectrocatalytic processes

Semiconducting transition metal dichalcogenide (TMD) nanosheets are promising materials for electrocatalysis and photoelectrocatalysis. However, the existing analytical approaches are inadequate at comprehensively describing the operation of narrow-bandgap semiconductors in these two processes. Furthermore, the distribution of the reactive sites on the electrode surface and the dynamic movement of carriers within these semiconductors during the reactions remain ambiguous. To plug these knowledge gaps, an in situ widefield imaging technique was devised in this study to investigate the electron distribution in different types of TMDs; notably, the method permits high-spatiotemporal-resolution analyses of electron-induced metal-ion reduction reactions in both electrocatalysis and photoelectrocatalysis. The findings revealed a unique complementary distribution of the active sites on WSe2 nanosheets during the two different cathodic processes. Our facile imaging approach can provide insightful information on the heterogeneous structure-property relationship at the electrochemical interfaces, facilitating the rational design of high-performance electrocatalytic/photoelectrocatalytic materials.

Photovoltage and Photocurrent Absorption Spectra of Sulfur Vacancies Locally Patterned in Monolayer MoS2

We report on the optical absorption characteristics of selectively positioned sulfur vacancies in monolayer MoS2, as observed by photovoltage and photocurrent experiments in an atomistic vertical tunneling circuit at cryogenic and room temperature. Charge carriers are resonantly photoexcited within the defect states before they tunnel through an hBN tunneling barrier to a graphene-based drain contact. Both photovoltage and photocurrent characteristics confirm the optical absorption spectrum as derived from ab initio GW and Bethe-Salpeter equation approximations. Our results reveal the potential of single-vacancy tunneling devices as atomic-scale photodiodes.

Lattice dynamics of Ge1-xSnx alloy nanowires

Alloying group IV semiconductors offers an effective way to engineer their electronic properties and lattice dynamics. The incorporation of Sn in Ge permits a transition from an indirect to a direct bandgap semiconductor. Here, by combining polarization, laser power-dependent and temperature-dependent micro-Raman spectroscopy we explore the full lattice dynamics of Ge_1-xSn_x (x = 0.01, 0.06 and 0.08) alloy nanowires. In the high Sn content samples (x ≥ 0.06), a low-frequency tail and a high-frequency shoulder are observed which are associated with the F_2g optical phonon mode of Ge (Ge-Ge mode). The new modes are assigned to the stretching of Ge-Ge bonds due to Sn-induced lattice relaxation and compression, respectively. The symmetry of the observed Raman modes has been studied by polarization-dependent Raman scattering. Nonlinear fitting of the laser power-dependent intensity of the high-frequency Ge-Ge mode in the Ge_1-xSn_x alloy nanowires with x = 0.06 and 0.08 suggests the activation of a third-order stimulated Raman scattering process, due to the high intensity localized electric field surrounding the Sn clusters. Finally, from the temperature-dependent Raman study, we have estimated the isobaric Grüneisen parameters for all the observed modes.

Research Progress of Plasmonic Nanostructure-Enhanced Photovoltaic Solar Cells

Enhancement of the electromagnetic properties of metallic nanostructures constitute an extensive research field related to plasmonics. The latter term is derived from plasmons, which are quanta corresponding to longitudinal waves that are propagating in matter by the collective motion of electrons. Plasmonics are increasingly finding wide application in sensing, microscopy, optical communications, biophotonics, and light trapping enhancement for solar energy conversion. Although the plasmonics field has relatively a short history of development, it has led to substantial advancement in enhancing the absorption of the solar spectrum and charge carrier separation efficiency. Recently, huge developments have been made in understanding the basic parameters and mechanisms governing the application of plasmonics, including the effects of nanoparticles' size, arrangement, and geometry and how all these factors impact the dielectric field in the surrounding medium of the plasmons. This review article emphasizes recent developments, fundamentals, and fabrication techniques for plasmonic nanostructures while investigating their thermal effects and detailing light-trapping enhancement mechanisms. The mismatch effect of the front and back light grating for optimum light trapping is also discussed. Different arrangements of plasmonic nanostructures in photovoltaics for efficiency enhancement, plasmonics' limitations, and modeling performance are also deeply explored.

Wafer-Scale Synthesis and Optical Characterization of InP Nanowire Arrays for Solar Cells

Nanowire solar cells have the potential to reach the same efficiencies as the world-record III-V solar cells while using a fraction of the material. For solar energy harvesting, large-area nanowire solar cells have to be processed. In this work, we demonstrate the synthesis of epitaxial InP nanowire arrays on a 2 inch wafer. We define five array areas with different nanowire diameters on the same wafer. We use a photoluminescence mapper to characterize the sample optically and compare it to a homogeneously exposed reference wafer. Both steady-state and time-resolved photoluminescence maps are used to study the material's quality. From a mapping of reflectance spectra, we simultaneously extract the diameter and length of the nanowires over the full wafer. The extracted knowledge of large-scale nanowire synthesis will be crucial for the upscaling of nanowire-based solar cells, and the demonstrated wafer-scale characterization methods will be central for quality control during manufacturing.

Solution processable in situ passivated silicon nanowires

The 1D confinement of silicon in the form of a nanowire revives its newness with the emergence of new optical and electronic properties. However, the development of a production process for silicon nanowires (SiNWs) having a high quality crystalline core and exhibiting good stability in solution with effective outer-shell defect passivation is still a challenge. In this work, SiNWs are prepared from a silicon wafer using solution processing steps, and importantly outer-shell-defect passivation is achieved by in situ grafting of organic molecules based on thin films. Defect passivation and the high quality of the SiNWs are confirmed with thin films on glass and flexible plastic substrates. A dramatic enhancement in both the fluorescence lifetime and infrared photoluminescence is observed. The in situ organic passivation of SiNWs has potential application in all low-dimensional silicon devices including infrared detectors, solar cells and lithium-ion battery anodes.

Influence of Geometrical Shape on the Characteristics of the Multiple InN/InxGa1-xN Quantum Dot Solar Cells

Solar cells that are based on the implementation of quantum dots in the intrinsic region, so-called intermediate band solar cells (IBSCs), are among the most widely used concepts nowadays for achieving high solar conversion efficiency. The principal characteristics of such solar cells relate to their ability to absorb low energy photons to excite electrons through the intermediate band, allowing for conversion efficiency exceeding the limit of Shockley–Queisser. IBSCs are generating considerable interest in terms of performance and environmental friendliness. However, there is still a need for optimizing many parameters that are related to the solar cells, such as the size of quantum dots, their shape, the inter-dot distance, and choosing the right material. To date, most studies have only focused on studying IBSC composed of cubic shape of quantum dots. The main objective of this study is to extend the current knowledge of IBSC. Thus, we analyze the effect of the shape of the quantum dot on the electronic and photonic characteristics of indium nitride and indium gallium nitride multiple quantum dot solar cells structure considering cubic, spherical, and cylindrical quantum dot shapes. The ground state of electrons and holes energy levels in quantum dot are theoretically determined by considering the Schrödinger equation within the effective mass approximation. Thus, the inter and intra band transitions are determined for different dot sizes and different inter dot spacing. Consequently, current–voltage (J-V) characteristic and efficiencies of these devices are evaluated and compared for different shapes. Our calculations show that, under fully concentrated light, for the same volume of different quantum dots (QD) shapes and a well determined In-concentration, the maximum of the photovoltaic conversion efficiencies reaches 63.04%, 62.88%, and 62.43% for cubic, cylindrical, and spherical quantum dot shapes, respectively.

Third optical harmonic generation reveals circular anisotropy in tilted silicon nanowire array

In this Letter, we report on the circular anisotropy of third-harmonic (TH) generation in an array of silicon nanowires (SiNWs) of approximately 100 nm in diameter tilted to the crystalline silicon substrate at an angle of 45°. Numerical simulations of the scattering at the fundamental and TH frequencies of circularly polarized light by a single SiNW and an ansatz structure composed of 13 SiNWs used as a geometrical approximation of the real SiNW array indicate asymmetric scattering diagrams, which is a manifestation of the photonic spin Hall effect mediated by the synthetic gauge field arising due to the special guided-like mode structure in each SiNW. Despite strong light scattering in the SiNW array, the experimentally measured TH signal demonstrated significant dependence on the polarization state of incident radiation and the SiNW array spacial orientation in regard to the wave vector direction.

Morphology dependent electrical conduction and breakdown in single TiO2 nanotubes

Understanding the electrical conduction properties of a single nanostructure is essential for gaining insight into the fundamental charge transport through 1D materials and also for exploring the collective behavior of an array of such nanostructures. TiO₂ nanostructures, such as electrochemically grown nanotubes, have been widely studied in recent times for several applications. The electrolyte plays a vital role in deciding the morphology, which, in turn, governs the charge transport behavior. Here we present a comparative study of the charge transport through a single TiO₂ nanotube grown by electrochemical anodization using ethylene glycol and dimethyl sulphoxide electrolytes. The individual nanotubes are assembled into nanodevices using photolithography without relying on complex and sophisticated process like electron beam lithography or focused ion beam deposition. The electric field dependent charge transport properties show Schottky emission at a lower field regime and Poole-Frenkel emission in the higher region. The temperature-dependent electrical conduction (110 K-410 K) is mediated by two thermal activation processes, attributed to shallow impurities in the low-temperature range (T < 230 K) and to the donors at deep intermediate levels at higher temperatures (T > 230 K). The activation energies for EG based nanotubes are found to be higher than those for DMSO nanotubes owing to the double wall morphology of the formed tubes. Also, the study of the electrical breakdown phenomena of these nanotubes reveals three distinct categories of collapse. 'Model A' type breakdown is characterized by a stepwise rise of the current up to the breakdown point and a fall to zero following a non-uniform step by step decrease, which is driven by crack formation near the electrode interface and its propagation. 'Model B' shows a transient rise and fall in current, leading to breakdown due to electromigration, whereas 'Model C' type breakdown observed in a bundle of nanotubes shows a mixed trend of 'Model A' and 'Model B'. The data and analysis provide insight into the current limit through an individual nanotube or bundle of nanotubes and will be useful for designing prototype nanodevices from titania nanostructures.

Core-shell cadmium sulphide @ silver sulphide nanowires surface architecture: Design towards photoelectrochemical solar cells

Design and development of cadmium sulphide core with silver sulphide shell assembly in nanowire (NWs) surface architecture has been explored through room temperature, simple chemical route towards photoelectrochemical solar cell application. Incorporation of low band gap Ag₂S nanoparticles over the outer surface of the chemical bath deposited CdS NWs has been achieved by simple cation exchange route based on negative free energy of formation. Shell optimization has been performed by investigating structure, surface morphologies and optical analyses and correlated with the photovoltaic parameters. Interestingly, core-shell CdS NWs/ Ag₂S exhibits 1.5 better performance in terms of linear voltammetry, photocurrent transient response and the photo stability than bare CdS. Furthermore, three-fold enhancement in photoelectrochemical conversion efficiency have been observed for optimized FTO/ CdS NWs/Ag₂S compared to bare FTO/CdS NWs due to the augmented light harvesting and condensed charge recombination. External quantum efficiency exhibits 24% for the optimized CdS NWs/ Ag₂S core shell structure. Mott-Schottky and electrochemical impedance spectroscopy measurements have been used for better understanding the impact of gradual growth of Ag₂S over CdS NWs which directly influences the overall photocurrent density of the devices.

Role of the Metal-Semiconductor Interface in Halide Perovskite Devices for Radiation Photon Counting

Halide perovskites are promising optoelectronic semiconductors. For applications in solid-state detectors that operate in low photon flux counting mode, blocking interfaces are essential to minimize the dark current noise. Here, we investigate the interface between methylammonium lead tri-iodide (MAPbI₃) single crystals and commonly used high and low work function metals to achieve photon counting capabilities in a solid-state detector. Using scanning photocurrent microscopy, we observe a large Schottky barrier at the MAPbI₃/Pb interface, which efficiently blocks dark current. Moreover, the shape of the photocurrent profile indicates that the MAPbI₃ single-crystal surface has a deep fermi level close to that of Au. Rationalized by first-principle calculations, we attribute this observation to the defects due to excess iodine on the surface underpinning emergence of deep band-edge states. The photocurrent decay profile yields a charge carrier diffusion length of 10-25 μm. Using this knowledge, we demonstrate a single-crystal MAPbI₃ detector that can count single γ-ray photons by producing sharp electrical pulses with a fast rise time of <2 μs. Our study indicates that the interface plays a crucial role in solid-state detectors operating in photon counting mode.

Silicon Nanowires and their Impact on Cancer Detection and Monitoring

Since the inception of silicon nanowires (SINWs)-based biosensors in 2001, SINWs employed in various detection schemes have routinely demonstrated label-free, real-time, sub femtomolar detection of both protein and nucleic acid analytes. This has allowed SiNW-based biosensors to integrate into the field of cancer detection and cancer monitoring and thus have the potential to be a paradigm shift in how cancer biomarkers are detected and monitored. Combining this with several promising fields such as liquid biopsies and targeted oncology, SiNW based biosensors represents an opportunity for cancer monitoring and treatment to be a more dynamic process. Such advances provide clinicians with more information on the molecular landscape of cancer patients which can better inform cancer treatment guidelines.

New Schottky-Type Wire-Based Solar Cell with NiSix Nanowire Contacts

Solar cells built with arrays of semiconductor wires have been studied for several years. They present some potential advantages over their bulk counterparts, such as (much) less use of semiconductor material, as well as improved light absorption properties. Most wire-based solar cells are fabricated with arrays of semiconductor p-n junctions, either radial or axial. Here, using a newly developed random connection process based on nickel silicide nanowires, we have built Schottky-type solar cells on interdigitated base and emitter coplanar electrodes that reach an efficiency of 6.5% when only 64% of the footprint area of the device is covered with p-type Si wire light-absorbers. To the best of our knowledge, this is the best efficiency reported so far for a Schottky-type wire-based solar cell; a simple extrapolation of the surface area suggests that an efficiency of more than 10% can be reached, which is comparable to that of single-junction hydrogenated amorphous Si cells. We also compare the Schottky-type cell with a "control" p-i-n one using the same device layout and the same nickel silicide nanowire random connection process: the efficiency of the p-i-n cell is higher (∼8%) but this is due to a higher V_OC, the short-circuit current density (I_SC) being very similar in both cases, close to 20 mA/cm². The maximum temperature reached throughout the fabrication process of the cells (whether Schottky-type or p-i-n) is 550 °C, corresponding to the growth of the crystalline Si wires. Altogether, the results presented here hold promises toward cheap photovoltaics based on the use of randomly organized and randomly connected Si wire arrays.

Augmentation of absorption channels induced by wave-chaos effects in free-standing nanowire arrays

Plenty of issues on quantal features in chaotic systems have been raised since chaos was accepted as one of the intrinsic properties of nature. Through intensive studies, it was revealed that resonance spectra in chaotic systems exhibit complicated structures, which is deeply concerned with sophisticated resonance dynamics. Motivated by these phenomena, we investigate light absorption characteristics of chaotic nanowires in an array. According to our results, a chaotic cross-section of a nanowire induces a remarkable augmentation of absorption channels, that is, an increasing number of absorption modes leads to substantial light absorption enhancement, as the deformation of cross-section increases. We experimentally demonstrate the light absorption enhancement with free-standing Si-nanowire polydimethylsiloxane (PDMS) composites. Our results are applicable not only to transparent solar cells but also to complementary metal-oxide-semiconductor (CMOS) image sensors to maximize absorption efficiency.

Planar Growth, Integration, and Applications of Semiconducting Nanowires

Silicon and other inorganic semiconductor nanowires (NWs) have been extensively investigated in the last two decades for constructing high-performance nanoelectronics, sensors, and optoelectronics. For many of these applications, these tiny building blocks have to be integrated into the existing planar electronic platform, where precise location, orientation, and layout controls are indispensable. In the advent of More-than-Moore's era, there are also emerging demands for a programmable growth engineering of the geometry, composition, and line-shape of NWs on planar or out-of-plane 3D sidewall surfaces. Here, the critical technologies established for synthesis, transferring, and assembly of NWs upon planar surface are examined; then, the recent progress of in-plane growth of horizontal NWs directly upon crystalline or patterned substrates, constrained by using nanochannels, an epitaxial interface, or amorphous thin film precursors is discussed. Finally, the unique capabilities of planar growth of NWs in achieving precise guided growth control, programmable geometry, composition, and line-shape engineering are reviewed, followed by their latest device applications in building high-performance field-effect transistors, photodetectors, stretchable electronics, and 3D stacked-channel integration.

Probing dipole and quadrupole resonance mode in non-plasmonic nanowire using Raman spectroscopy

Electric field enhancement in semiconductor nanostructures offers a possibility to find an alternative to the metallic particles which is well known for tuning the light-matter interaction due to its strong polarizability and size-dependent surface plasmon resonance energy. Raman spectroscopy is a powerful technique to monitor the electric field as its scattering depends on the electromagnetic eigenmode of the particle. Here, we observe enhanced polarized Raman scattering from germanium nanowires of different diameters. The incident electromagnetic radiation creates a distribution of the internal electric field inside the naowires which can be enhanced by manipulating the nanowire diameter, the incident electric field and its polarization. Our estimation of the enhancement factor, including its dependence on nanowire diameter, agrees well with the Mie theory for an infinite cylinder. Furthermore, depending on diameter of nanowire and wavelength of incident radiation, polarized Raman study shows dipolar (antenna effect) and quadrupolar resonances, which has never been observed in germanium nanowire. We attempt to understand this polarized Raman behavior using COMSOL Multiphysics simulation, which suggests that the pattern observed is due to photon confinement within the nanowires. Thus, the light scattering direction can be toggled by tuning the polarization of incident excitation and diameter of non plasmonic nanowire.

Absorption-Enhanced Ultra-Thin Solar Cells Based on Horizontally Aligned p-i-n Nanowire Arrays

A horizontally aligned GaAs p–i–n nanowire array solar cell is proposed and studied via coupled three-dimensional optoelectronic simulations. Benefiting from light-concentrating and light-trapping properties, the horizontal nanowire array yields a remarkable efficiency of 10.8% with a radius of 90 nm and a period of 5 radius, more than twice that of its thin-film counterpart with the same thickness. To further enhance the absorption, the nanowire array is placed on a low-refractive-index MgF₂ substrate and capsulated in SiO₂, which enables multiple reflection and reabsorption of light due to the refractive index difference between air/SiO₂ and SiO₂/MgF₂. The absorption-enhancement structure increases the absorption over a broad wavelength range, resulting in a maximum conversion efficiency of 18%, 3.7 times higher than that of the thin-film counterpart, which is 3 times larger in GaAs material volume. This work may pave the way for the development of ultra-thin high-efficiency solar cells with very low material cost.

Optically oriented attachment of nanoscale metal-semiconductor heterostructures in organic solvents via photonic nanosoldering

As devices approach the single-nanoparticle scale, the rational assembly of nanomaterial heterojunctions remains a persistent challenge. While optical traps can manipulate objects in three dimensions, to date, nanoscale materials have been trapped primarily in aqueous solvents or vacuum. Here, we demonstrate the use of optical traps to manipulate, align, and assemble metal-seeded nanowire building blocks in a range of organic solvents. Anisotropic radiation pressure generates an optical torque that orients each nanowire, and subsequent trapping of aligned nanowires enables deterministic fabrication of arbitrarily long heterostructures of periodically repeating bismuth-nanocrystal/germanium-nanowire junctions. Heat transport calculations, back-focal-plane interferometry, and optical images reveal that the bismuth nanocrystal melts during trapping, facilitating tip-to-tail “nanosoldering” of the germanium nanowires. These bismuth-semiconductor interfaces may be useful for quantum computing or thermoelectric applications. In addition, the ability to trap nanostructures in oxygen- and water-free organic media broadly expands the library of materials available for optical manipulation and single-particle spectroscopy.

The use of optical traps has been limited to materials dispersed in aqueous media, which restricts the materials and range of experiments. Here, the authors demonstrate the alignment and assembly of composite structures made of a bismuth nanocrystal and a germanium nanowire in organic solvents.

Electrostatically Doped Silicon Nanowire Arrays for Multispectral Photodetectors

Nanowires have promising applications as photodetectors with superior ability to tune absorption with morphology. Despite their high optical absorption, the quantum efficiencies of these nanowire photodetectors remain low due to difficulties in fabricating a shallow junction using traditional doping methods. As an alternative, we report nonconventional radial heterojunction photodiodes obtained by conformal coating of an indium oxide layer on silicon nanowire arrays. The indium oxide layer has a high work function which induces a strong inversion in the silicon nanowire and creates a virtual p-n junction. The resulting nanowire photodetectors show efficient carrier separation and collection, leading to an improvement of quantum efficiency up to 0.2. In addition, by controlling the nanowire radii, the spectral responses of the In₂O₃/Si nanowire photodetectors are tuned over several visible light wavelengths, creating a multispectral detector. Our approach is promising for the development of highly efficient wavelength-selective photodetectors.

Nanoscale Photovoltaic Responses in 3D Radial Junction Solar Cells Revealed by High Spatial Resolution Laser Excitation Photoelectric Microscopy

The actual light absorption photovoltaic responses realized in three-dimensional (3D) radial junction (RJ) units can be rather different from their planar counterparts and remain largely unexplored. We here adopt a laser excitation photoelectric microscope (LEPM) technology to probe the local light harvesting and photoelectric signals of 3D hydrogenated amorphous silicon (a-Si:H) RJ thin film solar cells constructed over a Si nanowire (SiNW) matrix, with a high spatial resolution of 600 nm thanks to the use of a high numerical aperture objective. The LEPM scan can help to resolve clearly the impacts of local structural damages, which are invisible to optical and SEM observations. More importantly, the high-resolution photoelectric mapping establishes a straightforward link between the local 3D geometry of RJ units and their light conversion performance. Surprisingly, it is found that the maximal photoelectric signals are usually recorded in the void locations among the standing SiNW RJs, instead of the overhead positions above the RJs. This phenomenon can be well explained and reproduced by finite element simulation analysis, which highlights unambiguously the dominant contribution of inter-RJ-unit scattering against direct mode incoupling in the 3D solar cell architecture. This LEPM mapping technology and the results help to achieve a straightforward and high-resolution evaluation of the local photovoltaic responses among the 3D RJ units, providing a solid basis for further structural optimization and performance improvement.

Nanostructures for Light Trapping in Thin Film Solar Cells

Thin film solar cells are one of the important candidates utilized to reduce the cost of photovoltaic production by minimizing the usage of active materials. However, low light absorption due to low absorption coefficient and/or insufficient active layer thickness can limit the performance of thin film solar cells. Increasing the absorption of light that can be converted into electrical current in thin film solar cells is crucial for enhancing the overall efficiency and in reducing the cost. Therefore, light trapping strategies play a significant role in achieving this goal. The main objectives of light trapping techniques are to decrease incident light reflection, increase the light absorption, and modify the optical response of the device for use in different applications. Nanostructures utilize key sets of approaches to achieve these objectives, including gradual refractive index matching, and coupling incident light into guided modes and localized plasmon resonances, as well as surface plasmon polariton modes. In this review, we discuss some of the recent developments in the design and implementation of nanostructures for light trapping in solar cells. These include the development of solar cells containing photonic and plasmonic nanostructures. The distinct benefits and challenges of these schemes are also explained and discussed.

Phononic pathways towards rational design of nanowire heat conduction

Thermal conduction in semiconductor nanowires is controlled by the transport of atomic vibrations also known as thermal phonons. The ability of nanowires to tailor the transport of thermal phonons stems from their precise atomic scale growth coupled with high structural surface to volume ratios. Understanding and manipulating thermal transport properties at the nanoscale is central for progress in the fields of microelectronics, optoelectronics, and thermoelectrics. Here, we review state-of-the-art advances in the understanding of nanowire thermal phonon transport and the design and fabrication of nanowires with tailored thermal conduction properties. We first introduce the basic physical mechanisms of thermal conduction at the nanoscale and detail recent developments in employing nanowires as thermal materials. We discuss and provide insight on different strategies to modulate nanowire thermal properties leveraging the underlying phonon transport processes occurring in nanowires. We also highlight challenges and key areas of interest to motivate future research and create exceptional capabilities to control heat flow in nanowires.

Hybrid Silicon Nanowire Devices and Their Functional Diversity

In the pool of nanostructured materials, silicon nanostructures are known as conventionally used building blocks of commercially available electronic devices. Their application areas span from miniaturized elements of devices and circuits to ultrasensitive biosensors for diagnostics. In this Review, the current trends in the developments of silicon nanowire-based devices are summarized, and their functionalities, novel architectures, and applications are discussed from the point of view of analog electronics, arisen from the ability of (bio)chemical gating of the carrier channel. Hybrid nanowire-based devices are introduced and described as systems decorated by, e.g., organic complexes (biomolecules, polymers, and organic films), aimed to substantially extend their functionality, compared to traditional systems. Their functional diversity is explored considering their architecture as well as areas of their applications, outlining several groups of devices that benefit from the coatings. The first group is the biosensors that are able to represent label-free assays thanks to the attached biological receptors. The second group is represented by devices for optoelectronics that acquire higher optical sensitivity or efficiency due to the specific photosensitive decoration of the nanowires. Finally, the so-called new bioinspired neuromorphic devices are shown, which are aimed to mimic the functions of the biological cells, e.g., neurons and synapses.

Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes

We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes grown by metal organic chemical vapor deposition using selective area epitaxy technique and reveal the complex origins of their electroluminescence properties. We observe that the single InGaAs/InP quantum well embedded in the nanowire consists of three components with different chemical compositions, axial quantum well, ring quantum well, and radial quantum well, leading to the electroluminescence emission with multiple wavelengths. The electroluminescence measurements show a strong dependence on current injection levels as well as temperatures and these are explained by interpreting the equivalent circuits in a minimized area of the device. It is also found that the electroluminescence properties are closely related to the distinctive triangular morphology with an inclined facet of the quantum well nanowire. Our study provides important new insights for further design, growth, and fabrication of high-performance quantum well-based nanowire light sources for a wide range of future optoelectronic and photonic applications.

Structural and Optical Properties of Silicon Nanowire Arrays Fabricated by Metal Assisted Chemical Etching With Ammonium Fluoride

Here we report on the metal assisted chemical etching method of silicon nanowires (SiNWs) manufacturing, where the commonly used hydrofluoric acid (HF) has been successfully replaced with ammonium fluoride (NH₄F). The mechanism of the etching process and the effect of the pH values of H₂O₂: NH₄F solutions on the structural and optical properties of nanowires were studied in detail. By an impedance and Mott-Schottky measurements it was shown that silver-assisted chemical etching of silicon can be attributed to a facilitated charge carriers transport through Si/SiO_x/Ag interface. It was shown that the shape of nanowires changes from pyramidal to vertical with pH decreasing. Also it was established that the length of SiNW arrays non-linearly depends on the pH for the etching time of 10 min. A strong decrease of the total reflectance to 5–10% was shown for all the studied samples at the wavelength <800 nm, in comparison with crystalline silicon substrate (c-Si). At the same time, the intensities of the interband photoluminescence and the Raman scattering of SiNWs are increased strongly in compare to c-Si value, and also they were depended on both the length and the shape of SiNW: the biggest values were for the long pyramidal nanowires. That can be explained by a strong light scattering and partial light localization in SiNWs. Hereby, arrays of SiNWs, obtained by using weakly toxic ammonium fluoride, have great potential for usage in photovoltaics, photonics, and sensorics.

Nanoscale mapping of carrier collection in single nanowire solar cells using X-ray beam induced current

Here it is demonstrated how nanofocused X-ray beam induced current (XBIC) can be used to quantitatively map the spatially dependent carrier collection probability within nanostructured solar cells. The photocurrent generated by a 50 nm-diameter X-ray beam was measured as a function of position, bias and flux in single p-i-n doped solar-cell nanowires. The signal gathered mostly from the middle segment decays exponentially toward the p- and n-segments, with a characteristic decay length that varies between 50 nm and 750 nm depending on the flux and the applied bias. The amplitude of the XBIC shows saturation at reverse bias, which indicates that most carriers are collected. At forward bias, the relevant condition for solar cells, the carrier collection is only efficient in a small region. Comparison with finite element modeling suggests that this is due to unintentional p-doping in the middle segment. It is expected that nanofocused XBIC could be used to investigate carrier collection in a wide range of nanostructured solar cells.

Probing the photovoltaic properties of Ga-doped CdS–Cu2S core–shell heterostructured nanowire devices

In this study Ga-doped cadmium sulfide (CdS) nanowires (NWs) were grown through chemical vapor deposition.

Hierarchical carbon-silicon nanowire heterostructures for the hydrogen evolution reaction

Silicon nanowires (SiNWs) opened up exciting possibilities in a variety of research fields due to their unique anisotropic morphologies, facile tuning capabilities, and accessible fabrication methods. The SiNW-based photoelectrochemical (PEC) conversion has recently been known to provide an efficiency superior to that of various photo-responsive semiconductor heterostructures. However, a challenge still remains in designing optimum structures to minimize photo-oxidation and photo-corrosion of the Si surface in a liquid electrolyte. Here, we report a simple method to synthesize hierarchically branched carbon nanowires (CNWs) on SiNWs utilizing copper vapor as the catalyst in a chemical vapor deposition (CVD) process, which exhibits outstanding photocatalytic activities for hydrogen generation along with excellent chemical stability against oxidation and corrosion. Thus, we believe that the CNW-SiNW photoelectrodes would provide a new route to developing high-performing cost-effective catalysts essential for advanced energy conversion and storage technologies.

Metasurface Mirrors for External Control of Mie Resonances

The ability to control and structurally tune the optical resonances of semiconductor nanostructures has far-reaching implications for a wide range of optical applications, including photodetectors, (bio)sensors, and photovoltaics. Such control is commonly obtained by tailoring the nanostructure's geometry, material, or dielectric environment. Here, we combine insights from the field of coherent optics and metasurface mirrors to effectively turn Mie resonances on and off with high spatial control and in a polarization-dependent fashion. We illustrate this in an integrated device by manipulating the photocurrent spectra of a single-nanowire photodetector placed on a metasurface mirror. This approach can be generalized to control spectral, angle-dependent, absorption, and scattering properties of semiconductor nanostructures with an engineered metasurface and without a need to alter their geometric or materials properties.

Oxidation of silicon nanowire can transport much more light into silicon substrate

Silicon nanowire (SiNW) has been widely used for light-trapping in photovoltaics, optical sensors, and other optoelectronic devices. However, we found that 58.4% of the light trapped by a SiNW with a diameter of 60 nm and a length of 1 μm will be wasted: 64.5% of the trapped light will be absorbed within itself, and 90.5% of carriers excited by this part of light will recombine before being transported to the silicon substrate. In this work, it is shown that oxidation of SiNW can transport much more light into the silicon substrate. At first, our simulation results demonstrate that oxidation can dramatically reduce the percentage of absorbed light. In an oxidized SiNW (O-SiNW) with a total and silicon core diameter of 60 nm and 30 nm, respectively, the percentage is about 44.5%. Next, a low carrier recombination ratio, about 27.3%, can be obtained in O-SiNW due to the passivation effect of the oxide layer. As a result, oxidation of SiNW can reduce the proportion of wasted light from 58.4% to 12.1%. More importantly, oxidation almost doesn't sacrifice the light-trapping ability: experimental measurements demonstrate that the average reflectance of an O-SiNW array is only slightly higher than that of a SiNW array, 3.9% vs. 3.0%. Such O-SiNW is promising to be used for low-loss light-trapping in specially designed photovoltaic devices.

Negative Photoconductance in Heavily Doped Si Nanowire Field-Effect Transistors

We report the first observation of negative photoconductance (NPC) in n- and p-doped Si nanowire field-effect transistors (FETs) and demonstrate the strong influence of doping concentrations on the nonconventional optical switching of the devices. Furthermore, we show that the NPC of Si nanowire FETs is dependent on the wavelength of visible light due to the phonon-assisted excitation to multiple conduction bands with different band gap energies that would be a distinct optoelectronic property of indirect band gap semiconductor. We attribute the main driving force of NPC in Si nanowire FETs to the photogenerated hot electrons trapping by dopants ions and interfacial states. Finally, comparing back- and top-gate modulation, we derive the mechanisms of the transition between negative and positive photoconductance regimes in nanowire devices. The transition is decided by the competition between the light-induced interfacial trapping and the recombination of mobile carriers, which is dependent on the light intensity and the doping concentration.

Opto-electric investigation for Si/organic heterojunction single-nanowire solar cells

Recently, silicon single nanowire solar cells (SNSCs) serving as the sustainable self-power sources have been integrated into optoelectronic nanodevices under the driver of technology and economy. However, conventional SNSC cannot provide the minimum energy consumption for the operation of nanodevices due to its low power conversion efficiency (PCE). Here, we propose an innovative approach to combine the n-type silicon nanowires (SiNWs) with p-type poly(3,4-ethylthiophene):poly(styrenesulfonate) (PEDOT:PSS) to form the p⁺n heterojunction, which shows superior opto-electric performances. Besides, PEDOT:PSS also acts as a natural anti-reflection coating (ARC) with an excellent light-trapping capability, especially in the short-wavelength range. Importantly, the photovoltaic performances of Si/PEDOT:PSS SNSC can be well maintained even in large surface recombination velocity, due to the efficient field-effect passivation of PEDOT:PSS. The minority carrier concentration at outer surface of shallow p⁺n heterojunction is greatly reduced by the electric field, drastically suppressing the surface recombination compared to the conventional p-i-n homojunction SNSC. Furthermore, larger junction area of p⁺n heterojunction facilitates the separation of photo-generated charge carriers. These results demonstrate that the Si/PEDOT:PSS SNSC is a promising alternative for micro power application.

Large-Scale Fabrication of Silicon Nanowires for Solar Energy Applications

The development of silicon (Si) materials during past decades has boosted up the prosperity of the modern semiconductor industry. In comparison with the bulk-Si materials, Si nanowires (SiNWs) possess superior structural, optical, and electrical properties and have attracted increasing attention in solar energy applications. To achieve the practical applications of SiNWs, both large-scale synthesis of SiNWs at low cost and rational design of energy conversion devices with high efficiency are the prerequisite. This review focuses on the recent progresses in large-scale production of SiNWs, as well as the construction of high-efficiency SiNW-based solar energy conversion devices, including photovoltaic devices and photo-electrochemical cells. Finally, the outlook and challenges in this emerging field are presented.

Dielectric Nanorod Scattering and its Influence on Material Interfaces

This work elaborates on the high scattering which dielectric nanorods exhibit and how it can be exploited to control light propagation across material interfaces. A detailed overview of how dielectric nanorods interact with light through a combination of dipolar scattering and leaky modes is performed via outward power flux calculations. We establish and account for design parameters that best result in light magnification owing to resonant behavior of nanorods. Impact of material parameters on scattering and their dispersion have been calculated to establish that low loss dielectric oxides like ZnO when nanostructured show excellent antenna like resonances which can be used to control light coupling and propagation. Interfacial scattering calculations demonstrate the high forward directivity of nanorods for various dielectric interfaces. A systematic analysis for different configurations of single and periodic nanorods on air dielectric interface emphasizes the light coupling tendencies exhibited by nanorods to and from a dielectric. Spatial characteristics of the localized field enhancement of the nanorod array on an air dielectric interface show focusing attributes of the nanorod array. We give a detailed account to tailor and selectively increase light propagation across an interface with good spectral and spatial control.

Filtration-guided assembly for patterning one-dimensional nanostructures

Tremendous progress has been made in synthesizing various types of one-dimensional (1D) nanostructures (NSs), such as nanotubes and nanowires, but some technical challenges still remain in the deterministic assembly of the solution-processed 1D NSs for device integration. In this work we investigate a scalable yet inexpensive nanomaterial assembly method, namely filtration-guided assembly (FGA), to place nanomaterials into desired locations as either an individual entity or ensembles, and form functional devices. FGA not only addresses the assembly challenges but also encompasses the notion of green nanomanufacturing, maximally utilizing nanomaterials and eliminating a waste stream of nanomaterials into the environment. FGA utilizes selective filtration of 1D NSs through the open windows on the nanoporous filter membrane whose surface is patterned by a polymer mask for guiding the 1D NS deposition. The modified soft-lithographic technique called blanket transfer (BT) is employed to create the various photoresist patterns of sub-10-micron resolution on the nanoporous filter membrane like mixed cellulose acetate. We use single-walled carbon nanotubes (SWCNTs) as a model 1D NS and demonstrate the fabrication of an array pattern of homogeneous 1D NS network films over an area of 20 cm² within 10 min. The FGA-patterned SWCNT network films are transferred onto the substrate using the adhesive-based transfer technique, and show the highly uniform film thickness and resistance measurements across the entire substrate. Finally, the electrical performance of the back-gated transistors made from the FGA and transfer method of 95% pure SWCNTs is demonstrated.

Direct Electrical Probing of Periodic Modulation of Zinc-Dopant Distributions in Planar Gallium Arsenide Nanowires

Selective lateral epitaxial (SLE) semiconductor nanowires (NWs), with their perfect in-plane epitaxial alignment, ability to form lateral complex p-n junctions in situ, and compatibility with planar processing, are a distinctive platform for next-generation device development. However, the incorporation and distribution of impurity dopants in these planar NWs via the vapor-liquid-solid growth mechanism remain relatively unexplored. Here, we present a detailed study of SLE planar GaAs NWs containing multiple alternating axial segments doped with Si and Zn impurities by metalorganic chemical vapor deposition. The dopant profile of the lateral multi-p-n junction GaAs NWs was imaged simultaneously with nanowire topography using scanning microwave impedance microscopy and correlated with infrared scattering-type near-field optical microscopy. Our results provide unambiguous evidence that Zn dopants in the periodically twinned and topologically corrugated p-type segments are preferentially segregated at twin plane boundaries, while Si impurity atoms are uniformly distributed within the n-type segments of the NWs. These results are further supported by microwave impedance modulation microscopy. The density functional theory based modeling shows that the presence of Zn dopant atoms reduces the formation energy of these twin planes, and the effect becomes significantly stronger with a slight increase of Zn concentration. This implies that the twin formation is expected to appear when a threshold planar concentration of Zn is achieved, making the onset and twin periodicity dependent on both Zn concentration and nanowire diameter, in perfect agreement with our experimental observations.

Growth and optical investigations of high quality individual CdTe/(Cd,Mg)Te core/shell nanowires

CdTe nanowires with the average diameter of only 40 nm coated with (Cd,Mg)Te shells are grown using Au-catalyzed vapor-liquid-solid growth mechanism in a system for molecular beam epitaxy. High optical quality of individual nanowires is revealed by means of low temperature cathodoluminescence and micro-luminescence. It is found that, the optical emission spectrum consists mostly of the near band edge emission without any significant contribution of defect related luminescence. Moreover, the importance of surface passivation with (Cd,Mg)Te coating shells is demonstrated.

Quantifying losses and thermodynamic limits in nanophotonic solar cells

Nanophotonic engineering shows great potential for photovoltaics: the record conversion efficiencies of nanowire solar cells are increasing rapidly and the record open-circuit voltages are becoming comparable to the records for planar equivalents. Furthermore, it has been suggested that certain nanophotonic effects can reduce costs and increase efficiencies with respect to planar solar cells. These effects are particularly pronounced in single-nanowire devices, where two out of the three dimensions are subwavelength. Single-nanowire devices thus provide an ideal platform to study how nanophotonics affects photovoltaics. However, for these devices the standard definition of power conversion efficiency no longer applies, because the nanowire can absorb light from an area much larger than its own size. Additionally, the thermodynamic limit on the photovoltage is unknown a priori and may be very different from that of a planar solar cell. This complicates the characterization and optimization of these devices. Here, we analyse an InP single-nanowire solar cell using intrinsic metrics to place its performance on an absolute thermodynamic scale and pinpoint performance loss mechanisms. To determine these metrics we have developed an integrating sphere microscopy set-up that enables simultaneous and spatially resolved quantitative absorption, internal quantum efficiency (IQE) and photoluminescence quantum yield (PLQY) measurements. For our record single-nanowire solar cell, we measure a photocurrent collection efficiency of >90% and an open-circuit voltage of 850 mV, which is 73% of the thermodynamic limit (1.16 V).

Optical Properties of Silicon Nanowires Fabricated by Environment-Friendly Chemistry

Silicon nanowires (SiNWs) were fabricated by metal-assisted chemical etching (MACE) where hydrofluoric acid (HF), which is typically used in this method, was changed into ammonium fluoride (NH4F). The structure and optical properties of the obtained SiNWs were investigated in details. The length of the SiNW arrays is about 2 μm for 5 min of etching, and the mean diameter of the SiNWs is between 50 and 200 nm. The formed SiNWs demonstrate a strong decrease of the total reflectance near 5-15 % in the spectral region λ < 1 μm in comparison to crystalline silicon (c-Si) substrate. The interband photoluminescence (PL) and Raman scattering intensities increase strongly for SiNWs in comparison with the corresponding values of the c-Si substrate. These effects can be interpreted as an increase of the excitation intensity of SiNWs due to the strong light scattering and the partial light localization in an inhomogeneous optical medium. Along with the interband PL was also detected the PL of SiNWs in the spectral region of 500-1100 nm with a maximum at 750 nm, which can be explained by the radiative recombination of excitons in small Si nanocrystals at nanowire sidewalls in terms of a quantum confinement model. So SiNWs, which are fabricated by environment-friendly chemistry, have a great potential for use in photovoltaic and photonics applications.

Dynamics of graded-composition and graded-doping semiconductor nanowires under local carrier modulation

Scanning photocurrent microscopy is a powerful tool for investigating charge transfer and internal fields, which strongly influence carrier statics and dynamics in semiconductor nanowires. We performed comprehensive numerical modeling of the carrier dynamics of graded-composition and graded-doping AlGaAs nanowires to achieve a greater understanding of these nanowires. The simulation results indicated that the built-in electric field changes the shape of the scanning photocurrent microscopy profiles, which helped us to judge the dopant level, Al composition range and doping type of the material. The simulation results also assess the potential of the scanning photocurrent techniques in graded-doping and graded-composition nanowire properties.

Nanostructured silicon via metal assisted catalyzed etch (MACE): chemistry fundamentals and pattern engineering

There are a range of different methods to generate a nanostructured surface on silicon (Si) but the most cost effective and optically interesting is the metal assisted wet chemical etching (MACE) (Koynov et al 2006 Appl. Phys. Lett. 88 203107). MACE of Si is a controllable, room-temperature wet-chemical technique that uses a thin layer of metal to etch the surface of Si, leaving behind various nano- and micro-scale surface features or 'black silicon'. MACE-fabricated nanowires (NWs) provide improved antireflection and light trapping functionality (Toor et al 2016 Nanoscale 8 15448-66) compared with the traditional 'iso-texturing' (Campbell and Green 1987 J. Appl. Phys. 62 243-9). The resulting lower reflection and improved light trapping can lead to higher short circuit currents in NW solar cells (Toor et al 2011 Appl. Phys. Lett. 99 103501). In addition, NW cells can have higher fill factors and voltages than traditionally processed cells, thus leading to increased solar cell efficiencies (Cabrera et al 2013 IEEE J. Photovolt. 3 102-7). MACE NW processing also has synergy with next generation Si solar cell designs, such as thin epitaxial-Si and passivated emitter rear contact (Toor et al 2016 Nanoscale 8 15448-66). While several companies have begun manufacturing black Si, and many more are researching these techniques, much of the work has not been published in traditional journals and is publicly available only through conference proceedings and patent publications, which makes learning the field challenging. There have been three specialized review articles published recently on certain aspects of MACE or black Si, but do not present a full review that would benefit the industry (Liu et al 2014 Energy Environ. Sci. 7 3223-63; Yusufoglu et al 2015 IEEE J. Photovolt. 5 320-8; Huang et al 2011 Adv. Mater. 23 285-308). In this feature article, we review the chemistry of MACE and explore how changing parameters in the wet etch process effects the resulting texture on the Si surface. Then we review efforts to increase the uniformity and reproducibility of the MACE process, which is critical for commercializing the black Si technology.

Growth of epitaxial silicon nanowires on a Si substrate by a metal-catalyst-free process

The growth of epitaxial Si nanowires by a metal-catalyst-free process has been investigated as an alternative to the more common metal-catalyzed vapor-liquid-solid process. The well-aligned Si nanowires are successfully grown on a (111)-oriented Si substrate without any metal catalysts by a thermal treatment using silicon sulfide as a Si source at approximately 1200 °C. The needle-shaped Si nanowires, which have a core-shell structure that consists of a single-crystalline Si core along the <111> direction consistent with the substrate direction and a surface coating of silicon oxide, are grown by a metal-catalyst-free process. In this process, the silicon sulfide in the liquid phase facilitates the nucleation and nanowire growth. In contrast, oxygen-rich nanowires that consist of crystalline Si at the tip and lumpy silicon oxide on the body are observed in a sample grown at 1300 °C, which disturbs the epitaxial growth of Si nanowires.

Hybrid silicon honeycomb/organic solar cells with enhanced efficiency using surface etching

Silicon (Si) nanostructure-based photovoltaic devices are attractive for their excellent optical and electrical performance, but show lower efficiency than their planar counterparts due to the increased surface recombination associated with the high surface area and roughness. Here, we demonstrate an efficiency enhancement for hybrid nanostructured Si/polymer solar cells based on a novel Si honeycomb (SiHC) structure using a simple etching method. SiHC structures are fabricated using a combination of nanosphere lithography and plasma treatment followed by a wet chemical post-etching. SiHC has shown superior light-trapping ability in comparison with the other Si nanostructures, along with a robust structure. Anisotropic tetramethylammonium hydroxide etching not only tunes the final surface morphologies of the nanostructures, but also reduces the surface roughness leading to a lower recombination rate in the hybrid solar cells. The suppressed recombination loss, benefiting from the reduced surface-to-volume ratio and roughness, has resulted in a high open-circuit voltage of 600 mV, a short-circuit current of 31.46 mA cm(-2) due to the light-trapping ability of the SiHCs, and yields a power conversion efficiency of 12.79% without any other device structure optimization.

Progress and Design Concerns of Nanostructured Solar Energy Harvesting Devices

Integrating devices with nanostructures is considered a promising strategy to improve the performance of solar energy harvesting devices such as photovoltaic (PV) devices and photo-electrochemical (PEC) solar water splitting devices. Extensive efforts have been exerted to improve the power conversion efficiencies (PCE) of such devices by utilizing novel nanostructures to revolutionize device structural designs. The thicknesses of light absorber and material consumption can be substantially reduced because of light trapping with nanostructures. Meanwhile, the utilization of nanostructures can also result in more effective carrier collection by shortening the photogenerated carrier collection path length. Nevertheless, performance optimization of nanostructured solar energy harvesting devices requires a rational design of various aspects of the nanostructures, such as their shape, aspect ratio, periodicity, etc. Without this, the utilization of nanostructures can lead to compromised device performance as the incorporation of these structures can result in defects and additional carrier recombination. The design guidelines of solar energy harvesting devices are summarized, including thin film non-uniformity on nanostructures, surface recombination, parasitic absorption, and the importance of uniform distribution of photo-generated carriers. A systematic view of the design concerns will assist better understanding of device physics and benefit the fabrication of high performance devices in the future.

Exact comprehensive equations for the photon management properties of silicon nanowire

Unique photon management (PM) properties of silicon nanowire (SiNW) make it an attractive building block for a host of nanowire photonic devices including photodetectors, chemical and gas sensors, waveguides, optical switches, solar cells, and lasers. However, the lack of efficient equations for the quantitative estimation of the SiNW’s PM properties limits the rational design of such devices. Herein, we establish comprehensive equations to evaluate several important performance features for the PM properties of SiNW, based on theoretical simulations. Firstly, the relationships between the resonant wavelengths (RW), where SiNW can harvest light most effectively, and the size of SiNW are formulized. Then, equations for the light-harvesting efficiency at RW, which determines the single-frequency performance limit of SiNW-based photonic devices, are established. Finally, equations for the light-harvesting efficiency of SiNW in full-spectrum, which are of great significance in photovoltaics, are established. Furthermore, using these equations, we have derived four extra formulas to estimate the optimal size of SiNW in light-harvesting. These equations can reproduce majority of the reported experimental and theoretical results with only ~5% error deviations. Our study fills up a gap in quantitatively predicting the SiNW’s PM properties, which will contribute significantly to its practical applications.